Millimeter wave MIMO antenna based on current cancellation model E / H plane decoupling

By loading metal current diverters and parasitic stubs between millimeter-wave MIMO antenna elements, simultaneous decoupling of the E/H planes is achieved, solving the problem of difficult decoupling in existing technologies, and exhibiting good radiation performance and fabrication adaptability.

CN116191014BActive Publication Date: 2025-11-28SOUTHEAST UNIV
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Patent Information

Application Number
CN202310116513.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-02-15
Publication Date
2025-11-28
Estimated Expiration
2043-02-15

AI Technical Summary

Technical Problem

Existing technologies make it difficult to simultaneously decouple the E-plane and H-plane of millimeter-wave MIMO antennas, and the complex decoupling structure is difficult to apply to millimeter-wave antennas.

Method used

Metal current-guiding stubs and metal parasitic stubs are loaded between antenna elements, and the E-plane and H-plane are simultaneously decoupled through a current cancellation model. The process is fabricated using a single-layer PCB.

Benefits of technology

It achieves simultaneous decoupling of the E-plane and H-plane, has a simple antenna structure, is suitable for the millimeter-wave band, and has good radiation performance.

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Patent Text Reader

Abstract

The application discloses a kind of millimeter wave MIMO antennas based on current cancellation model E / H plane decoupling, including metal floor, dielectric substrate, microstrip antenna unit, drainage metal branch, parasitic metal branch and coaxial feed port group composition.Metal floor is printed in the lower surface of dielectric substrate;Multiple microstrip antenna units are printed on the upper surface of dielectric substrate, and are connected with multiple coaxial feed ports respectively;E-plane microstrip antenna unit is respectively loaded with drainage metal branch to realize E-plane decoupling;H-plane microstrip antenna unit is respectively loaded with parasitic metal branch to realize H-plane decoupling.The application can realize MIMO antenna E / H plane simultaneous decoupling, and structure is simple and easy to process, can be applied to millimeter wave MIMO antenna system needing high isolation, and asymmetric millimeter wave MIMO antenna array.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of antenna decoupling, in particular to a millimeter wave MIMO antenna based on current cancellation model E / H plane decoupling. BACKGROUND

[0002] In recent years, millimeter wave MIMO (multiple input multiple output) communication technology has developed rapidly, and various forms of MIMO antennas have appeared, which have excellent diversity communication performance, but also have some problems to be solved, of which the most difficult to solve is the mutual coupling problem between array elements. The existence of mutual coupling deteriorates the radiation performance of the antenna, so how to decouple the MIMO antenna is the key problem of research.

[0003] Traditional decoupling methods include increasing the element spacing, defect structure, neutral line, etc., but all have shortcomings and problems, and it is difficult to achieve E-plane (E-Plane) and H-plane (H-plane) decoupling at the same time. At the same time, the complex decoupling structure is also difficult to apply to millimeter wave antennas. Therefore, how to design a millimeter wave MIMO antenna with E / H plane decoupling is a very worthwhile problem to study. SUMMARY

[0004] Technical problem: The purpose of the present application is to overcome the shortcomings of the prior art and provide a millimeter wave MIMO antenna based on current cancellation model E / H plane decoupling. By loading metal drain stubs and metal parasitic stubs between antenna elements, E-plane and H-plane decoupling is achieved. And the antenna structure is simple, and is processed and manufactured by single-layer PCB process, which can be applied to millimeter wave frequency band under existing processing precision, solving the problem of millimeter wave MIMO antenna decoupling difficulty.

[0005] Technical scheme: To achieve this purpose, the millimeter wave MIMO antenna based on current cancellation model E / H plane decoupling of the present application adopts the following technical scheme:

[0006] A metal ground plane is provided on the lower surface of the dielectric substrate, and a first microstrip antenna element, a second microstrip antenna element, a third microstrip antenna element, and a fourth microstrip antenna element are symmetrically arranged on the upper surface of the dielectric substrate. A first current-guiding metal stub is provided between the first and third microstrip antenna elements, and a second current-guiding metal stub is provided between the second and fourth microstrip antenna elements. A first parasitic metal stub is provided between the first and second microstrip antenna elements, and a second parasitic metal stub is provided between the third and fourth microstrip antenna elements. A first coaxial feed port is provided in the first microstrip antenna element, a second coaxial feed port is provided in the second microstrip antenna element, a third coaxial feed port is provided in the third microstrip antenna element, and a fourth coaxial feed port is provided in the fourth microstrip antenna element.

[0007] The first microstrip antenna unit, the second microstrip antenna unit, the third microstrip antenna unit, and the fourth microstrip antenna unit have various shapes, including rectangular, circular, or triangular.

[0008] The first and second drainage metal branches have various shapes, including multiple metal branches, S-shaped metal branches, or I-shaped metal branches.

[0009] The first and second parasitic metal branches have various shapes, including multiple metal branches, S-shaped metal branches, or I-shaped metal branches.

[0010] The dielectric substrate is a single-layer or multi-layer structure.

[0011] The first microstrip antenna unit, the second microstrip antenna unit, the third microstrip antenna unit, and the fourth microstrip antenna unit are single-layer or multi-layer microstrip antenna structures.

[0012] The metal floor is a single-layer or multi-layer metal structure.

[0013] The dielectric substrate is a low-temperature co-fired ceramic substrate or a PCB (Printed Circuit Board) dielectric substrate.

[0014] A first current-guiding metal stub is provided between the first microstrip antenna unit and the third microstrip antenna unit, and a second current-guiding metal stub is provided between the second microstrip antenna unit and the fourth microstrip antenna unit to achieve E-plane decoupling.

[0015] The first parasitic metal stub is provided between the first microstrip antenna unit and the second microstrip antenna unit, and the second parasitic metal stub is provided between the third microstrip antenna unit and the fourth microstrip antenna unit to achieve H-plane decoupling.

[0016] Beneficial effects: the application discloses a millimeter wave MIMO antenna based on an E / H plane decoupling model, realizes the simultaneous decoupling of E and H planes by loading metal drainage branches and metal parasitic branches between antenna units, and has a simple structure and is processed and manufactured by using a single-layer PCB process, so that the millimeter wave MIMO antenna can be applied to a millimeter wave frequency band under the existing machining precision, and the problem of millimeter wave MIMO antenna decoupling difficulty is solved. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is a structure schematic diagram of the millimeter wave MIMO antenna in the embodiment of the application;

[0018] Figure 2 is a reflection coefficient simulation and measurement result diagram of the millimeter wave MIMO antenna in the embodiment of the application;

[0019] Figure 3 is a transmission coefficient simulation and measurement result diagram of the millimeter wave MIMO antenna in the embodiment of the application;

[0020] Figure 4 is an E-plane radiation pattern simulation and measurement result of the first radiation patch 31 of the millimeter wave MIMO antenna in the embodiment of the application at a frequency point of 26 GHz;

[0021] Figure 5 is an H-plane radiation pattern simulation and measurement result of the first radiation patch 31 of the millimeter wave MIMO antenna in the embodiment of the application at a frequency point of 26 GHz;

[0022] Figure 6 is an E-plane radiation pattern simulation and measurement result of the fourth radiation patch 34 of the millimeter wave MIMO antenna in the embodiment of the application at a frequency point of 26 GHz;

[0023] Figure 7 is an H-plane radiation pattern simulation and measurement result of the fourth radiation patch 34 of the millimeter wave MIMO antenna in the embodiment of the application at a frequency point of 26 GHz.

[0024] In the figure: metal ground plate 1, dielectric substrate 2, first microstrip antenna unit 31, second microstrip antenna unit 32, third microstrip antenna unit 33, fourth microstrip antenna unit 34, first drainage metal branch 41, second drainage metal branch 42, first parasitic metal branch 51, second parasitic metal branch 52, first coaxial feeding port 61, second coaxial feeding port 62, third coaxial feeding port 63, fourth coaxial feeding port 64. DETAILED DESCRIPTION

[0025] This invention relates to a millimeter-wave MIMO antenna based on a current cancellation model with E / H plane decoupling, which has the characteristic of simultaneous decoupling of the E / H planes.

[0026] The technical solution of the present invention will be further described below with reference to specific embodiments and accompanying drawings.

[0027] like Figure 1 As shown, in order to reduce costs and solve the problem of millimeter-wave antenna processing accuracy, the dielectric substrate 2 used in this invention is Rogers RO4003 with a dielectric constant of 3.55 and a thickness of 0.508mm.

[0028] The outer conductor of the SSMP connector is soldered onto the metal ground plane 1 below the dielectric substrate 2. The inner conductor of the SSMP connector is connected to the first microstrip antenna element 31, the second microstrip antenna element 32, the third microstrip antenna element 33, and the fourth microstrip antenna element 34 through the first coaxial feed port 61, the second coaxial feed port 62, the third coaxial feed port 63, and the fourth coaxial feed port 64.

[0029] The first microstrip antenna element 31, the second microstrip antenna element 32, the third microstrip antenna element 33, and the fourth microstrip antenna element 34 are arranged in a 2*2 array configuration, with an element spacing of 5mm, which is less than 1 / 4 of the spatial wavelength of the antenna operating frequency. The microstrip antenna elements are square patches.

[0030] The first drain metal stub 41 is I-shaped and located at the centerline between the first microstrip antenna element 31 and the third microstrip antenna element 33, and is horizontal to the array direction formed by the first microstrip antenna element 31 and the third microstrip antenna element 33; the second drain metal stub 42 is I-shaped and located at the centerline between the second microstrip antenna element 32 and the fourth microstrip antenna element 34, and is horizontal to the array direction formed by the second microstrip antenna element 32 and the fourth microstrip antenna element 34.

[0031] The first parasitic metal branch 51 is II-shaped and located at the centerline between the first microstrip antenna element 31 and the second microstrip antenna element 32, perpendicular to the array direction formed by the first microstrip antenna element 31 and the second microstrip antenna element 32; the second parasitic metal branch 52 is II-shaped and located at the centerline between the third microstrip antenna element 33 and the fourth microstrip antenna element 34, perpendicular to the array direction formed by the third microstrip antenna element 33 and the fourth microstrip antenna element 34.

[0032] The metal ground plane 1, the first microstrip antenna element 31, the second microstrip antenna element 32, the third microstrip antenna element 33, the fourth microstrip antenna element 34, the first drain metal branch 41 and the second drain metal branch 42, the first parasitic metal branch 51 and the second parasitic metal branch 52 are all made of copper.

[0033] The application is further described in detail below in combination with simulation and actual measurement experiments:

[0034] Referring to Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7 .

[0035] 1. Simulation conditions and contents:

[0036] The above-mentioned embodiments are simulated and calculated by using commercial simulation software HFSS_20R2, and the simulation results and test results are shown in Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7 .

[0037] 2. Analysis of actual measurement and simulation results:

[0038] Figure 2 is a reflection coefficient curve diagram of the first microstrip antenna unit 31 and the fourth microstrip antenna unit 34, wherein the abscissa represents the working frequency of the antenna, and the ordinate represents the reflection coefficient of the antenna.

[0039] As can be seen from Figure 2 , the actual measurement results of the antenna are in good agreement with the simulation results, and the frequency band range with a reflection coefficient less than -10 dB is 25.7-26.3 GHz.

[0040] Figure 3 is a transmission coefficient curve diagram of the first microstrip antenna unit 31 and the fourth microstrip antenna unit 34, wherein the abscissa represents the working frequency of the antenna, and the ordinate represents the transmission coefficient of the antenna.

[0041] As can be seen from Figure 3 , the actual measurement results of the antenna are in good agreement with the simulation results, and the frequency band range with a transmission coefficient less than -25 dB is 25.7-26.3 GHz. The E plane and the H plane of the antenna both have good decoupling effect.

[0042] Figure 4 is an E plane radiation pattern of the first microstrip antenna unit 31 at a frequency point of 26 GHz.

[0043] Figure 5 is an H plane radiation pattern of the first microstrip antenna unit 31 at a frequency point of 26 GHz.

[0044] Figure 6 is an E plane radiation pattern of the fourth microstrip antenna unit 34 at a frequency point of 26 GHz.

[0045] Figure 7 is the H-plane radiation pattern of the fourth microstrip antenna unit 34 at the frequency point of 26GHz.

[0046] From Figure 4 , Figure 5 , Figure 6 and Figure 7 It can be seen that the measured results of the antenna are in good agreement with the simulation results, the radiation pattern is not distorted, and has good radiation characteristics.

[0047] The simulation and measurement results show that the millimeter wave MIMO antenna based on the current cancellation model E / H plane decoupling has good radiation performance, and can realize E / H plane simultaneous decoupling. This antenna has a good prospect in the application of millimeter wave MIMO system which needs high isolation.

[0048] The above description and examples are only preferred examples of the present application, and do not constitute any limitation on the present application. Obviously, for those skilled in the art, after understanding the content and design principles of the present application, various modifications and changes in form and details can be made based on the principles and structure of the present application. However, these modifications and changes based on the idea of the present application are still within the protection scope of the claims of the present application.

Claims

1. A millimeter-wave MIMO antenna based on E / H plane decoupling using a current cancellation model, characterized in that, A metal ground plane (1) is provided on the lower surface of the dielectric substrate (2), and a first microstrip antenna unit (31), a second microstrip antenna unit (32), a third microstrip antenna unit (33), and a fourth microstrip antenna unit (34) are symmetrically provided on the upper surface of the dielectric substrate (2); a first current-guiding metal stub (41) is provided between the first microstrip antenna unit (31) and the third microstrip antenna unit (33), and a second current-guiding metal stub (42) is provided between the second microstrip antenna unit (32) and the fourth microstrip antenna unit (34); in the first microstrip antenna unit (31)... A first parasitic metal stub (51) is provided between the second microstrip antenna elements (32), and a second parasitic metal stub (52) is provided between the third microstrip antenna elements (33) and the fourth microstrip antenna elements (34); a first coaxial feed port (61) is provided in the first microstrip antenna element (31), a second coaxial feed port (62) is provided in the second microstrip antenna element (32), a third coaxial feed port (63) is provided in the third microstrip antenna element (33), and a fourth coaxial feed port (64) is provided in the fourth microstrip antenna element (34); The first microstrip antenna unit (31), the second microstrip antenna unit (32), the third microstrip antenna unit (33), and the fourth microstrip antenna unit (34) have various shapes, including rectangular, circular, or triangular. The first drainage metal branch (41) and the second drainage metal branch (42) have various shapes, including multiple metal branches, S-shaped metal branches or I-shaped metal branches; The first parasitic metal branch (51) and the second parasitic metal branch (52) have various shapes, including multiple metal branches, S-shaped metal branches, or I-shaped metal branches.

2. The millimeter-wave MIMO antenna based on current cancellation model E / H plane decoupling according to claim 1, characterized in that: The dielectric substrate (2) is a single-layer or multi-layer structure.

3. The millimeter-wave MIMO antenna based on current cancellation model E / H plane decoupling according to claim 1, characterized in that: The first microstrip antenna unit (31), the second microstrip antenna unit (32), the third microstrip antenna unit (33), and the fourth microstrip antenna unit (34) are single-layer or multi-layer microstrip antenna structures.

4. The millimeter-wave MIMO antenna based on current cancellation model E / H plane decoupling according to claim 1, characterized in that: The metal floor (1) is a single-layer or multi-layer metal structure.

5. The millimeter-wave MIMO antenna based on current cancellation model E / H plane decoupling according to claim 1 or 2, characterized in that, The dielectric substrate (2) is a low-temperature co-fired ceramic substrate or a PCB dielectric substrate.

6. The millimeter-wave MIMO antenna based on current cancellation model E / H plane decoupling according to claim 1, characterized in that, A first drain metal stub (41) is provided between the first microstrip antenna unit (31) and the third microstrip antenna unit (33), and a second drain metal stub (42) is provided between the second microstrip antenna unit (32) and the fourth microstrip antenna unit (34) to achieve E-plane decoupling.

7. The millimeter-wave MIMO antenna based on current cancellation model E / H plane decoupling according to claim 1, characterized in that, The first parasitic metal stub (51) is provided between the first microstrip antenna unit (31) and the second microstrip antenna unit (32), and the second parasitic metal stub (52) is provided between the third microstrip antenna unit (33) and the fourth microstrip antenna unit (34) to achieve H-plane decoupling.