A high depth-to-diameter ratio micro-hole machining device and method with time-space shaping function

Abstract

The present invention discloses a micro-hole processing device and method with a time-space shaping function, so as to solve the problem that the micro-nano structure processed by the existing femtosecond laser processing device and method has an insufficient depth-to-diameter ratio and the deep hole morphology is uncontrollable, resulting in the surface roughness of the processed material being too high and the material quality being low. Specifically, it includes a cone lens, a beam splitter, a reflection unit, a reflection delay unit, a first plano-convex mirror, a second plano-convex mirror, a beam combining mirror and a microscope objective lens; the large end of the cone lens receives the incident laser, and the small end thereof emits a Bessel beam to the beam splitter; the beam splitter divides the Bessel beam into a first sub-beam and / or a second sub-beam; the reflection unit and the first plano-convex mirror are sequentially arranged on the optical path where the first sub-beam is located; the reflection delay unit and the second plano-convex mirror are sequentially arranged on the optical path where the second sub-beam is located; the focal lengths of the first plano-convex mirror and the second plano-convex mirror are different; the beam combining mirror corresponds to the first plano-convex mirror and the second plano-convex mirror; the microscope objective lens emits the processing laser.

Description

Technical Field

[0001] The invention relates to a micro-hole processing device and method, and in particular to a micro-hole processing device and method with a large depth-to-diameter ratio and a time-space shaping function. Background Art

[0002] Micro-nano structures usually have functions such as anti-reflection, extinction, drag reduction, anti-icing, stealth, and anti-corrosion. They have demonstrated promising capabilities in aerospace, microelectronic devices, flexible photonic devices, all-microanalysis systems, microreactors, micro-electromechanical systems (MEMS), and micro-optical devices. For example, the micro-nano structure of semiconductor detectors can effectively improve the photon coupling efficiency and equivalent optical path, break through the absorption limit of traditional bulk materials, improve the quantum efficiency of optoelectronic devices, and reduce the dark current of devices, providing a new technical means for the research of high-performance infrared detectors. Micro-nano manufacturing, as the basis for supporting the application of micro-nano technology, is considered to be one of the focuses of international competition in advanced manufacturing technology.

[0003] At present, the traditional processing methods for micro-nano structures mainly include the following four:

[0004] 1. Chemical etching: refers to the removal of the protective film of the area to be etched after exposure and development. During etching, it contacts the chemical solution to achieve the effect of dissolution and corrosion, forming a concave-convex or hollow-out effect.

[0005] 2. Ion beam etching: Argon gas is decomposed into argon ions under the action of the glow discharge principle. The argon ions are accelerated by the anode electric field and physically bombard the sample surface to achieve the etching effect.

[0006] 3. Electron beam etching: Under computer control, the focused electron beam exposes the resist on the substrate according to the pattern required for processing, producing areas with different solubility properties in the resist. According to the solubility characteristics of different areas, selective developers are used for development. The highly soluble resist parts are removed, and the poorly soluble or insoluble parts are retained, so that the required resist pattern can be obtained.

[0007] 4. Nanoimprinting: A technology that replicates templates in large quantities. It is essentially a printing replication technology. It can be divided into nanoimprinting technology and molding technology according to the size of the graphic.

[0008] The above four processing technologies all have problems such as complex procedures, high costs, low efficiency, and inability to achieve curved surface processing. However, the energy density of femtosecond laser is extremely high (up to about 10 22 W / cm 2 ), the action space is very small (about 10 -10 m), the action time is very short (about 10 -15s), which makes its physical effects and action mechanisms in the manufacturing process completely different from traditional manufacturing methods, and compared with long-pulse lasers, femtosecond laser pulses also fundamentally change the mechanism of interaction between lasers and matter. Because of its extremely short pulse width, the time it interacts with the material is much shorter than the time of lattice heat conduction, which can effectively suppress the thermal effect caused by processing. The extremely short pulse width gives the femtosecond laser an extremely high peak power, making it "indestructible" and able to process almost all solid materials. However, in the prior art, due to the uncontrollable shape and properties of the femtosecond laser, the aspect ratio of the micro-nano structure processed by it is insufficient and the deep hole morphology is uncontrollable, resulting in excessively high surface roughness of the processed material and low material quality. Summary of the invention

[0009] The purpose of the present invention is to provide a large aspect ratio micro-hole processing device and method with time-space shaping function, so as to solve the technical problems that the aspect ratio of micro-nano structures processed by existing femtosecond laser processing devices and methods is insufficient and the deep hole morphology is uncontrollable, resulting in excessively high surface roughness of the processed material and low material quality.

[0010] In order to achieve the above-mentioned object, the present invention provides a high aspect ratio micro-hole processing device with time-space shaping function, which is special in that it includes an aconic lens, a beam splitter, a reflection unit, a reflection delay unit, a first plano-convex mirror, a second plano-convex mirror, a beam combiner and a microscope objective lens;

[0011] The large end of the axicon receives the incident laser, and the small end thereof emits a Bessel beam to the beam splitter;

[0012] The beam splitter is used to split the Bessel beam into a first sub-beam and / or a second sub-beam, and the beam splitter is provided with a plurality of light splitting areas of full light transmission, full light reflection and a light splitting ratio of 1:1 to 1:10;

[0013] The reflection unit and the first plano-convex mirror are sequentially arranged on the optical path where the first sub-beam is located, and are used to reflect the first sub-beam so that the first sub-beam can reach the beam combining mirror after passing through the first plano-convex mirror;

[0014] The reflection delay unit and the second plano-convex mirror are sequentially arranged on the optical path where the second sub-beam is located, and are used to reflect the second sub-beam so that the second sub-beam can reach the beam combining mirror after passing through the second plano-convex mirror, and timely adjust the optical path of the second sub-beam to the beam combining mirror;

[0015] The focal length f1 of the first plano-convex mirror and the focal length f2 of the second plano-convex mirror are different;

[0016] The beam combining mirrors correspond to the first plano-convex mirror and the second plano-convex mirror respectively, and combine the first split light beam and the second split light beam and then emit them to the microscope objective lens;

[0017] The microscope objective lens emits processing laser.

[0018] Further, the optical path between the first plano-convex mirror and the entrance of the microscope objective lens is f1+f3; wherein f3 is the focal length of the microscope objective lens;

[0019] The optical path between the second plano-convex mirror and the entrance of the microscope objective is f2+f3.

[0020] Further, a half-wave plate is included;

[0021] The half-wave plate is arranged on the optical path between the beam splitter and the fourth reflector;

[0022] The optical path between the small end of the axicon and the half-wave plate is ≥ Z max , where Z max is the length of the diffraction area of ​​the incident laser after passing through the axicon.

[0023] Further, a variable aperture is included;

[0024] The variable aperture is arranged on the optical path where the incident laser is located.

[0025] Further, the reflection delay unit includes a displacement platform and a fourth reflector and a fifth reflector arranged on the displacement platform;

[0026] The fourth reflector and the fifth reflector are sequentially arranged on the optical path where the second sub-beam is located; the fourth reflector and the fifth reflector are perpendicular to each other;

[0027] The displacement platform is used to drive the fourth reflector and the fifth reflector to move simultaneously on the optical path where the second sub-beam is located, so as to adjust the optical path of the second sub-beam to the beam combining mirror.

[0028] The optical path from the small end of the aconic lens to the second plano-convex mirror ≥ Z max / 2+f2.

[0029] Further, it also includes a first reflector;

[0030] The first reflector is arranged between the variable aperture and the axicon and is located on the optical path of the incident laser.

[0031] Further, the reflecting unit includes a second reflecting mirror and a third reflecting mirror;

[0032] The second reflector and the third reflector are sequentially arranged on the optical path where the first sub-beam is located;

[0033] The optical path from the small end of the aconic lens to the first plano-convex mirror is ≥ Z max / 2+f1.

[0034] The present invention also provides a method for machining a micro-hole with a large depth-to-diameter ratio and a time-space shaping function, which is special in that it comprises the following steps:

[0035] Step 1, constructing the above-mentioned high aspect ratio micro-hole processing device with time-space shaping function;

[0036] Step 2, switch the beam splitter to the splitting area so that it splits the Bessel beam emitted from the small end of the axle lens, adjust the reflection delay unit so that the optical path of the first split beam between the beam splitter and the beam combiner is equal to the optical path of the second split beam between the beam splitter and the beam combiner, and the time interval between the two sub-pulses split by the beam splitter is 0;

[0037] Step 3, switch the beam splitter to the full light transmission area so that it fully transmits the Bessel light beam emitted from the small end of the axicon;

[0038] Step 4, using the processing laser emitted by the microscope objective lens to process the initial deep hole;

[0039] Step 5, switch the beam splitter 2 to the splitting area, and switch the splitting ratio of the beam splitter to change the energy ratio of the first split beam and the second split beam after the beam splitter is split, and at the same time, adjust the reflection delay unit to change the optical path of the second split beam between the beam splitter and the beam combiner, thereby changing the time interval between the two sub-pulses;

[0040] Step 6: Use the processing laser emitted by the microscope objective to modify the morphology of the deep hole.

[0041] Furthermore, the method further comprises the following steps:

[0042] Step 7: Repeat steps 5 and 6, and smoothly change the time interval between the two sub-pulses until the deep hole morphology modification is completed.

[0043] Beneficial effects of the present invention:

[0044] 1. The present invention splits the incident laser Bessel beam, and sets a reflection delay unit on the optical path where the second split beam is located, and finally combines and shrinks the beam, thereby realizing the long focal depth spatial shaping and pulse interval time shaping of laser processing microholes at the same time. According to the actual processing needs, the two modes of spatial shaping and time-space shaping can be flexibly selected, wherein the spatial shaping can select two Bessel beams to switch between each other for processing, and in the time-space shaping mode, the interval between the two Bessel beams can be flexibly adjusted. When the two Bessel beams are switched between each other for processing, the microstructure can be modified and processed by another Bessel beam with a smaller focal depth and spot on the basis of the morphology formed by a single pulse with a larger focal depth and spot, which is conducive to obtaining a more controllable microhole / microgroove processing morphology, thereby improving the processing quality; by adjusting the time interval between Bessel pulses through the reflection delay unit, while improving the microhole depth-to-diameter ratio, the thermal effect (recasting, cracking, recrystallization, etc.) on the material surface can be greatly suppressed, the roughness of the material surface can be reduced, and the manufacturing quality can be greatly improved.

[0045] 2. The present invention adopts a half-wave plate to suppress the interference between the two sub-pulses, thereby ensuring the shaping quality of the two pulses. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 It is a structural schematic diagram of an embodiment of a high depth-to-diameter ratio micro-hole processing device with a time-space shaping function of the present invention;

[0047] Figure 2 1 is a schematic diagram of the structure of the processing laser processing the material in the embodiment of the present invention; wherein a is a schematic diagram of the structure of the processing laser processing the material when the beam splitter is switched to the full light-transmitting area, and b is a schematic diagram of the structure of the processing laser processing the material when the beam splitter is switched to the full light-reflecting area;

[0048] Figure 3 is a structural schematic diagram of the processing laser processing the material when the reflection delay unit is adjusted in an embodiment of the present invention; wherein a is a structural schematic diagram of the processing laser processing the material when the fourth reflector and the fifth reflector keep moving during the processing, and b is a structural schematic diagram of the processing laser processing the material when the fourth reflector and the fifth reflector move a distance h and remain fixed during the processing;

[0049] Figure 4 Schematic diagram of a deep hole structure processed by a single Bessel beam in an embodiment of the present invention; wherein a is a schematic diagram of a deep hole structure processed by a single Bessel beam, and b is a schematic diagram of a deep hole structure processed by two Bessel beams.

[0050] Figure Number:

[0051] 01-incident laser, 02-Bessel beam, 03-first sub-beam, 04-second sub-beam, 05-processing laser;

[0052] 1-aconical lens, 2-beam splitter, 3-first plano-convex mirror, 4-second plano-convex mirror, 5-beam combiner, 6-microscope objective, 7-fourth reflector, 8-fifth reflector, 9-half-wave plate, 10-variable aperture, 11-first reflector, 12-second reflector, 13-third reflector. DETAILED DESCRIPTION

[0053] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0054] The shape (temporal and spatial distribution) and properties (wavelength / intensity / polarization) of femtosecond lasers can be precisely controlled to achieve processing accuracy that exceeds the diffraction limit. Therefore, femtosecond lasers have unique advantages in multi-scale, selective, non-contact, high-precision, and high-quality (small thermal effect) manufacturing of difficult-to-process materials and three-dimensional complex structures, making them one of the ideal means of micro-nano manufacturing.

[0055] Therefore, the present invention provides a high depth-to-diameter ratio micro-hole processing device with time-space shaping function based on femtosecond laser, such as Figure 1 As shown, it includes a variable aperture 10, a first reflector 11, and a conical lens 1 which are arranged in sequence along the incident light 01; it also includes a half-wave plate 9, a beam splitter 2, a reflection unit, a reflection delay unit, a first plano-convex mirror 3, a second plano-convex mirror 4, a beam combining mirror 5 and a microscope objective 6; the reflection unit includes a second reflector 12 and a third reflector 13; the reflection delay unit includes a displacement platform and a fourth reflector 7 and a fifth reflector 8 which are arranged on the displacement platform.

[0056] The variable aperture 10 is used to block stray light in the incident laser 01 to ensure the beam quality of the incident laser 01; in addition, the aperture of the variable aperture 10 can be adjusted online to change the spot diameter of the incident laser 01, thereby changing the focus spot diameter and focal depth, thereby changing the focus spot size and focal depth length of the two sub-pulse Bessel beams.

[0057] The first reflecting mirror 11 reflects the incident laser light 01 that has passed through the variable aperture 10 toward the axicon 1 .

[0058] The large end of the axicon 1 receives the incident laser 01 after passing through the variable aperture 10 and the first reflector 11, and the small end thereof emits the Bessel beam 02 to the beam splitter 2; the cone base angle of the axicon 1 is γ=2°; the incident laser 01 is incident on the axicon 1 to generate an uncompressed Bessel beam, the center lobe diameter of which is D0 (unit μm)=49.5 μm, and the diffraction region length is Z max =337500μm, the calculation formula is as follows:

[0059]

[0060]

[0061] Among them, n axi is the refractive index of the axicon, R laser is the spot radius of the incident laser 01, and λ is the wavelength of the incident laser 01.

[0062] The distance between the beam splitter 2 and the axon 1 is greater than or equal to 337.5 μm. The beam splitter 2 is provided with multiple splitting areas of full light transmission, full light reflection and splitting ratio of 1:1 to 1:10, so that it can be switched within the range of full light transmission, 1:1 to 1:10 and full light reflection. If the beam splitter 2 is switched to the full light transmission area, there is only the first split beam 03 after the beam splitter 2, and then there is only one Bessel beam for laser processing; if the beam splitter 2 is switched to the full light reflection area, there is only the second split beam 04 after the beam splitter 2, and then there is only another Bessel beam for laser processing. If the beam splitter 2 is switched to the splitting area of ​​1:1 to 1:10, the Bessel beam 02 is split into the first split beam 03 and the second split beam 04, that is, two sub-pulses are formed, and then there will be two kinds of Bessel light for processing.

[0063] The second reflector 12, the third reflector 13 and the first plano-convex mirror 3 are sequentially arranged on the optical path of the first sub-beam 03; the second reflector 12 and the third reflector 13 continuously reflect the first sub-beam 03, so that the first sub-beam 03 can reach the beam combining mirror 5 after passing through the first plano-convex mirror 3; the focal length of the first plano-convex mirror 3 is f1=150mm, and the first plano-convex mirror 3 is used to focus the first sub-beam 03.

[0064] The fourth reflector 7, the fifth reflector 8 and the second plano-convex mirror 4 are sequentially arranged on the optical path of the second sub-beam 04; the fourth reflector 7 and the fifth reflector 8 continuously reflect the second sub-beam 04, so that the second sub-beam 04 can reach the beam-combining mirror 5 after passing through the second plano-convex mirror 4; the fourth reflector 7 and the fifth reflector 8 are perpendicular to each other; the displacement platform is used to drive the fourth reflector 7 and the fifth reflector 8 to move simultaneously on the optical path of the second sub-beam 04, so as to timely adjust the optical path of the second sub-beam 04 to reach the beam-combining mirror 5. The focal length of the second plano-convex mirror 4 is f2=200mm; the second plano-convex mirror 4 is used to focus the second sub-beam 04.

[0065] The half-wave plate 9 is arranged on the optical path of the second sub-beam 04 between the beam splitter 2 and the fourth reflector 7. The half-wave plate 9 can prevent interference between the two sub-pulses, so that the linear polarization directions of the two sub-pulses are perpendicular to each other.

[0066] The beam combining mirror 5 corresponds to the first plano-convex mirror 3 and the second plano-convex mirror 4 respectively, combines the first sub-beam 03 and the second sub-beam 04 and then emits them to the microscope objective 6.

[0067] The microscope objective lens is a 20X objective lens, and its focal length is f3=10mm; the microscope objective lens 6 emits the processing laser, and the combined light after passing through the beam combiner 5 passes through the microscope objective lens 6 to reach the working surface, that is, the material surface, to form a compressed Bessel beam, and the diameter of the central lobe of the Bessel area is D (in μm), and the calculation formula of the non-diffraction area length Z (in mm) is:

[0068]

[0069]

[0070] Among them, τ is the scaling factor, τ1 = f1 / f3, τ2 = f2 / f3.

[0071] The device must also meet the following conditions:

[0072] 1. Strictly ensure that the optical path between the first plano-convex lens 3 and the entrance of the microscope objective lens 6 is f1+f3.

[0073] 2. Strictly ensure that the optical path between the second plano-convex lens 4 and the entrance of the microscope objective 6 is f2+f3.

[0074] 3. The optical path between the small end of the aconic lens 1 and the first plano-convex lens 3 is ≥ Z max / 2+f1.

[0075] 4. The optical path between the small end of the aconic lens 1 and the second plano-convex lens 4 is ≥ Z max / 2+f2.

[0076] 5. The optical path between the small end of the aconic lens 1 and the half-wave plate 9 is ≥ Z max .

[0077] It is worth mentioning that the above optical path is based on the infinitesimal thickness of each optical component passed through, that is, the refraction of the light beam in each optical component is ignored. In actual applications, the thickness of the corresponding optical component passed through is recorded.

[0078] The specific processing process includes the following steps:

[0079] Step 1: construct the above-mentioned high aspect ratio micro-hole processing device with time-space shaping function.

[0080] Step 2, switch the beam splitter 2 to the splitting area so that it splits the Bessel light beam 02 emitted from the small end of the conical lens 1, and adjust the displacement platform in the reflection delay unit so that the optical path of the first split light beam 03 between the beam splitter 2 and the beam combining mirror 5 is equal to the optical path of the second split light beam 04 between the beam splitter 2 and the beam combining mirror 5, that is, the time interval between the two sub-pulses is 0, then L1+L2+L3+(f1-f2)=L4+L5+L6+L7, in this embodiment, that is, L1+L2+L3+100mm=L4+L5+L6+L7.

[0081] Step 3: Switch the beam splitter 2 to the full light transmission area so that it can fully transmit the Bessel light beam 02 emitted from the small end of the axicon 1.

[0082] Step 4, using the processing laser 05 emitted by the microscope objective lens 6 to process the initial deep hole; Figure 4 As shown in (a), the depth-diameter ratio of the deep hole processed by a single Bessel beam is very large, but its morphology is poor; the Bessel beam will encounter unexpected nonlinear effects inside the material, which will cause the width of the microgroove / microhole to be greatly reduced, making the hole wall not smooth enough; if the Bessel beam is used for continuous processing, it is possible that the entrance of the material surface will become larger and larger, but the morphology at the depth level will still not improve. To this end, the following steps can be continued.

[0083] Step 5, switch the beam splitter 2 to the splitting area, and switch the splitting ratio of the beam splitter 2 to change the energy ratio of the first sub-beam 03 and the second sub-beam 04 after splitting by the beam splitter 6. At the same time, adjust the reflection delay unit to change the optical path of the second sub-beam 04 between the beam splitter 2 and the beam combining mirror 5, thereby changing the time interval between the two sub-pulses △t=2h / c, where h is the optical path of the light beam propagation, and c is the speed of the light beam in the air, that is, the speed of light. In a specific implementation, the fourth reflector 7 and the fifth reflector 8 move 300μm, and the time interval △t of the pulses is 1ps.

[0084] Step 6: Use the processing laser 05 emitted by the microscope objective lens 6 to modify the morphology of the deep hole.

[0085] In a specific implementation, it is possible that switching the beam splitter 6 only once and adjusting the reflection delay unit only once cannot completely modify the deep hole morphology to perfection, so step 7 can be continued.

[0086] Step 7, repeat steps 5 and 6, and smoothly change the time interval between the two sub-pulses until the deep hole morphology modification is completed. Figure 4 As shown in (b), the hole wall has a smooth transition and gradually shrinks.

[0087] It is worth noting that when the beam splitter 2 is switched to the full light transmission area, only the following Figure 2 (a) shows the Bessel beam processing; when the beam splitter 2 is switched to the full reflection area, only the following is achieved Figure 2 (b) shows the Bessel beam processing. When the beam splitter 2 is switched to a splitting ratio of 1:1 to 1:10, the energy ratio of the two sub-pulses can be flexibly adjusted. In addition, the fourth reflector 7 and the fifth reflector 8 can be translated together to perform one-dimensional motion to achieve two types of Bessel beam processing, and the time intervals of the two sub-pulses can be equidistant (the fourth reflector 7 and the fifth reflector 8 are fixed during the processing after moving a distance h), as shown in FIG. Figure 3 As shown in (b), it can also be a gradual interval (the fourth reflector 7 and the fifth reflector 8 keep moving during the processing), such as Figure 3 (a) is shown. In order to expand the depth of the microhole / microgroove, the Bessel beam with a longer focal depth and a larger focal spot should be processed first, and then the Bessel beam with a shorter focal depth and focal spot should be processed again to modify the initially formed microhole / microgroove. Of course, it is also possible to first select a Bessel beam with a shorter focal depth and focal spot for processing according to needs, and then use a Bessel beam with a longer focal depth and a larger focal spot to expand the depth of the microhole.

[0088] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A high depth-to-diameter ratio micro-hole machining device with time-space shaping function, characterized in that: It comprises an aconic lens (1), a beam splitter (2), a reflection unit, a reflection delay unit, a first plano-convex mirror (3), a second plano-convex mirror (4), a beam combining mirror (5) and a microscope objective lens (6); The large end of the axle lens (1) receives the incident laser (01), and the small end thereof emits a Bessel light beam (02) to the beam splitter (2); The beam splitter (2) is used to split the Bessel light beam (02) into a first sub-beam (03) and / or a second sub-beam (04); the beam splitter (2) is provided with a plurality of fully light-transmissive and splitting regions with a splitting ratio of 1:1 to 1:10; The reflection unit and the first plano-convex mirror (3) are sequentially arranged on the optical path of the first split light beam (03) and are used to reflect the first split light beam (03) so that the first split light beam (03) reaches the beam combining mirror (5) after passing through the first plano-convex mirror (3); The reflection delay unit and the second plano-convex mirror (4) are sequentially arranged on the optical path of the second split light beam (04), and are used to reflect the second split light beam (04), so that the second split light beam (04) reaches the beam combining mirror (5) after passing through the second plano-convex mirror (4), and timely adjust the optical path of the second split light beam (04) reaching the beam combining mirror (5); The focal length f1 of the first plano-convex mirror (3) and the focal length f2 of the second plano-convex mirror (4) are different; The beam combining mirror (5) corresponds to the first plano-convex mirror (3) and the second plano-convex mirror (4) respectively, combines the first split light beam (03) and the second split light beam (04) and then emits them to the microscope objective lens (6); The microscope objective lens (6) emits a processing laser (05).

2. The high aspect ratio micro-hole machining device with time-space shaping function according to claim 1 is characterized in that: The optical path between the first plano-convex mirror (3) and the entrance of the microscope objective lens (6) is f1+f3; wherein f3 is the focal length of the microscope objective lens (6); The optical path between the second plano-convex mirror (4) and the entrance of the microscope objective lens (6) is f2+f3.

3. The high aspect ratio micro-hole machining device with time-space shaping function according to claim 2 is characterized in that: Also includes a half-wave plate (9); The half-wave plate (9) is arranged on the optical path between the beam splitter (2) and the fourth reflector (7); The optical path between the small end of the axicon (1) and the half-wave plate (9) is ≥ Z max , where Z max is the length of the diffraction region of the incident laser (01) after passing through the conical lens (1).

4. The high aspect ratio micro-hole machining device with time-space shaping function according to any one of claims 1 to 3, characterized in that: Also includes a variable aperture (10); The variable diaphragm (10) is arranged on the optical path of the incident laser (01).

5. The high aspect ratio micro-hole machining device with time-space shaping function according to claim 4 is characterized in that: The reflection delay unit comprises a displacement platform and a fourth reflection mirror (7) and a fifth reflection mirror (8) arranged on the displacement platform; The fourth reflector (7) and the fifth reflector (8) are sequentially arranged on the optical path where the second sub-beam (04) is located; the fourth reflector (7) and the fifth reflector (8) are perpendicular to each other; The displacement platform is used to drive the fourth reflector (7) and the fifth reflector (8) to move simultaneously on the optical path where the second split light beam (04) is located, so as to adjust the optical path of the second split light beam (04) reaching the beam combining mirror (5); The optical path from the small end of the aconic lens (1) to the second plano-convex mirror (4) is ≥ Z max / 2+f2.

6. The high aspect ratio micro-hole machining device with time-space shaping function according to claim 5 is characterized in that: Also includes a first reflector (11); The first reflector (11) is arranged between the variable diaphragm (10) and the axicon (1), and is located on the optical path of the incident laser (01).

7. The high aspect ratio micro-hole machining device with time-space shaping function according to claim 6 is characterized in that: The reflecting unit comprises a second reflecting mirror (12) and a third reflecting mirror (13); The second reflector (12) and the third reflector (13) are sequentially arranged on the optical path where the first sub-beam (03) is located; The optical path from the small end of the aconic lens (1) to the first plano-convex mirror (3) is ≥ Z max / 2+f1.

8. A method for machining a micro-hole with a large depth-to-diameter ratio and having a spatiotemporal shaping function, characterized in that: The following steps are involved: Step 1, constructing a high aspect ratio micro-hole processing device with spatiotemporal shaping function as described in any one of claims 1 to 7; Step 2, switch the beam splitter (2) to the light splitting region so that it splits the Bessel light beam (02) emitted from the small end of the conical lens (1), and adjust the reflection delay unit so that the optical path of the first split light beam (03) between the beam splitter (2) and the beam combining mirror (5) is equal to the optical path of the second split light beam (04) between the beam splitter (2) and the beam combining mirror (5), and the time interval between the two sub-pulses split by the beam splitter (2) is 0; Step 3, switching the beam splitter (2) to a fully light-transmitting region so that it fully transmits the Bessel light beam (02) emitted from the small end of the axicon (1); Step 4, using the processing laser (05) emitted by the microscope objective lens (6) to process the initial deep hole; Step 5, switching the beam splitter (2) to the splitting area, and switching the splitting ratio of the beam splitter (2) to change the energy ratio of the first split light beam (03) and the second split light beam (04) after being split by the beam splitter (2), and at the same time, adjusting the reflection delay unit to change the optical path of the second split light beam (04) between the beam splitter (2) and the beam combining mirror (5), thereby changing the time interval between the two sub-pulses; Step 6: Use the processing laser (05) emitted by the microscope objective lens (6) to modify the morphology of the deep hole.

9. The method for machining a large depth-to-diameter ratio micro-hole with a time-space shaping function according to claim 8, characterized in that: The following steps are also included: Step 7: Repeat steps 5 and 6, and smoothly change the time interval between the two sub-pulses until the deep hole morphology modification is completed.

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