A method for growing a GaN-based epitaxial structure with improved antistatic capability

Abstract

The application relates to the technical field of LEDs, in particular to a GaN-based epitaxial structure growth method for improving anti-static capability, which comprises the following steps: S3: sequentially growing a 10-30 nm Si-doped N-AlGaN layer and a 5-15 nm GaN layer; when the Si-doped N-AlGaN layer is grown, the reaction cavity temperature is set to 900-1200 DEG C, and the pressure is 100 Torr-300 Torr, wherein the Si doping concentration is 10 18 ‑10 19 atom / cm 3 ; when the GaN layer is grown, the reaction cavity temperature is set to 900-1200 DEG C, and the pressure is 100 Torr-300 Torr; S4: the step S3 is repeated for 8-10 times; the application has the beneficial effect that the structure formed by the steps S3 and S4 is a stress release layer, the stress release layer forms an n-type AlGaN / GaN alternating superlattice layer by using high-energy Al, and the short-period superlattice technology route can effectively improve the carrier transport performance, so that when a heterojunction is formed between GaN and AlGaN, spontaneous polarization is generated, and the anti-static performance of the LED epitaxial structure is greatly improved.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of LED, in particular to a GaN-based epitaxial structure growth method for improving anti-static capability. BACKGROUND

[0002] As a new type of solid-state lighting source, GaN-based light-emitting diodes (LED) are high-efficient, environment-friendly and green, and have the advantages of low voltage, low power consumption, small size, light weight and high reliability, and are rapidly applied to the fields of traffic signal lamps, mobile phone backlights, urban landscape lighting, car interior and exterior lamps, tunnel lamps and the like.

[0003] In the conventional technology, the LED epitaxial structure mainly comprises a substrate, a buffer layer, an N-type AlGaN layer, a multi-quantum well layer and a P-type GaN layer which are sequentially stacked. According to the Chinese patent with the publication number CN106328777B, an epitaxial growth method of a stress release layer of a light-emitting diode is disclosed, wherein the stress release layer is an important factor affecting the anti-static property of the LED. Therefore, the N-type AlGaN layer in the conventional technology is replaced by a GaN layer, an N-type GaN layer doped with Si, a stress release layer and an nGaN layer. However, this method still causes the lattice mismatch between the multi-quantum well layer and the structure below, which is not conducive to the stress release of the LED epitaxial structure, and thus the LED chip is likely to be electrostatically broken down. SUMMARY

[0004] The application aims to provide a GaN-based epitaxial structure growth method for improving anti-static capability.

[0005] In order to solve the above technical problems, the application adopts a technical solution of a GaN-based epitaxial structure growth method for improving anti-static capability, which comprises the following steps:

[0006] S1: placing a substrate into a reaction cavity to grow an N-type AlGaN layer;

[0007] S2: setting the temperature of the reaction cavity to 1000-1100 degrees, the pressure to 100Torr-300Torr, and growing a 2-3-micron N-GaN layer doped with Si, wherein the Si doping concentration is 10 18 -10 19 atom / cm 3 ;

[0008] S3: sequentially growing a 10-30-nanometer N-AlGaN layer doped with Si and a 5-15-nanometer GaN layer;

[0009] When the N-AlGaN layer doped with Si is grown, the reaction cavity temperature is set to 900-1200 degrees, and the pressure is set to 100 Torr-300 Torr, wherein the doping concentration of Si is 10 18 -10 19 atom / cm 3 ;

[0010] When the GaN layer is grown, the reaction cavity temperature is set to 900-1200 degrees, and the pressure is set to 100 Torr-300 Torr;

[0011] S4: the S3 cycle is repeated for 8-10 times;

[0012] S5: a multi-quantum well layer is grown;

[0013] S6: a P-type GaN layer is grown; the preparation of the LED epitaxial structure is completed.

[0014] The beneficial effects of the present application are that the structure formed by S3 and S4 is a stress release layer, which can avoid the problem of high mismatch degree of the multi-quantum well layer and the structure below it (including the N-GaN layer) as much as possible. The stress release layer uses the high energy level of Al to form an n-type AlGaN / GaN alternating superlattice layer, and uses the short period superlattice technology route to effectively improve the carrier transport performance. In addition, because there is a difference in lattice constant and conduction band and valence band position between GaN and AlGaN, when a heterojunction is formed between GaN and AlGaN, spontaneous polarization will be generated, and certain piezoelectric properties will be exhibited, which greatly improves the anti-static performance of the LED epitaxial structure. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 The overall structure of the LED epitaxial structure produced by the GaN-based epitaxial structure growth method for improving the anti-static capability according to the embodiment of the present application is shown in the figure;

[0016] Figure 2 The anti-static performance characteristic curve of the LED epitaxial structure of the comparative example is shown in the figure;

[0017] Label explanation:

[0018] 1, substrate; 2, buffer layer; 3, U-GaN layer; 4, N-type AlGaN layer; 5, N-GaN layer; 6, stress release layer; 7, multi-quantum well layer; 8, P-type Al y Ga 1-y N electron blocking layer; 9, P-type GaN layer; 10, P-type contact layer. DETAILED DESCRIPTION

[0019] In order to explain the technical content of the present application, the purposes and effects achieved, the following will be described in conjunction with the embodiments and the accompanying drawings.

[0020] Please refer to the accompanying Figure 1 A method for growing a GaN-based epitaxial structure with improved antistatic capability, comprising the following steps:

[0021] S1: placing a substrate 1 into a reaction chamber and growing an N-type AlGaN layer 4;

[0022] S2: setting the temperature of the reaction chamber to 1000-1100 degrees, the pressure to 100 Torr-300 Torr, and growing a 2-3-micron N-GaN layer doped with Si, wherein the doping concentration of Si is 10 18 -10 19 atom / cm 3 ;

[0023] S3: sequentially growing a 10-30-nanometer N-AlGaN layer doped with Si and a 5-15-nanometer GaN layer;

[0024] When growing the N-AlGaN layer doped with Si, the temperature of the reaction chamber is set to 900-1200 degrees, the pressure is set to 100 Torr-300 Torr, and the doping concentration of Si is 10 18 -10 19 atom / cm 3 ;

[0025] When growing the GaN layer, the temperature of the reaction chamber is set to 900-1200 degrees, and the pressure is set to 100 Torr-300 Torr;

[0026] S4: repeating the cycle of S3 for 8-10 times;

[0027] S5: growing a multi-quantum well layer 7;

[0028] S6: growing a P-type GaN layer; and completing the preparation of the LED epitaxial structure.

[0029] As can be seen from the above description, the present application has the beneficial effects that the structure formed by S3 and S4 is a stress release layer, which can avoid the problem of high mismatch degree of the multi-quantum well layer and the structure below it (including the N-GaN layer) as much as possible. The stress release layer uses the high energy level of Al to form an n-type AlGaN / GaN alternating superlattice layer, and uses the short-period superlattice technology route to effectively improve the carrier transport performance. In addition, because there is a difference in lattice constant and conduction band and valence band position between GaN and AlGaN, when a heterojunction is formed between GaN and AlGaN, spontaneous polarization will be generated, and certain piezoelectric properties will be exhibited, greatly improving the antistatic performance of the LED epitaxial structure.

[0030] Further, the S1 is specifically:

[0031] Put the substrate into the reaction cavity, and anneal the substrate in a hydrogen atmosphere for 7-9 minutes; set the reaction cavity temperature to 950-1150 degrees, and nitride the substrate; grow the N-type AlGaN layer.

[0032] As described above, the annealing of the substrate balances or improves the structure of the substrate, and reduces the stress of the LED epitaxial structure.

[0033] Further, the S1 is specifically:

[0034] Put the substrate into the reaction cavity, set the reaction cavity temperature to 700-900 degrees, and the pressure to 100 Torr-300 Torr, grow a 20-40 nanometer buffer layer; grow the N-type AlGaN layer.

[0035] As described above, the above settings provide a simple and efficient method for growing a buffer layer.

[0036] Further, the S1 is specifically: put the substrate into the reaction cavity, grow a buffer layer, perform annealing, grow a U-GaN layer, and grow the N-type AlGaN layer.

[0037] As described above, the annealing and the U-GaN layer under the N-type AlGaN layer are beneficial to improve the performance of the LED epitaxial structure.

[0038] Further, the "annealing" in the S1 is specifically: set the reaction cavity temperature to 1000-1200 degrees, the pressure to 100 Torr-300 Torr, and the duration to 4-8 minutes.

[0039] As described above, the above settings provide a simple and efficient method for annealing.

[0040] Further, the "growing a U-GaN layer" in the S1 is specifically: set the reaction cavity temperature to 1050-1150 degrees, the pressure to 100 Torr-300 Torr, and grow a 2-4 micrometer U-GaN layer 3.

[0041] As described above, the above settings provide a simple and efficient method for growing a U-GaN layer.

[0042] Further, the S1 is specifically: put the substrate into the reaction cavity, set the reaction cavity temperature to 800-1100 degrees, the pressure to 100 Torr-500 Torr, and grow a 20-150 nanometer N-type AlGaN layer, wherein the molar incorporation amount of Al is 0-0.3.

[0043] As described above, the above settings provide a simple and efficient method for growing an N-type AlGaN layer.

[0044] Further, the S5 includes S5.1 and S5.2;

[0045] The S5.1: sequentially grow an In x Ga 1-x N(0<x<1) layer and a 9-15 nm GaN layer;

[0046] The S5.2: cycle the S5.1 for 14-16 times.

[0047] As described above, the above settings provide a simple and efficient method for growing a multi-quantum well layer.

[0048] Further, the S5.1 is specifically: sequentially grow an In x Ga 1-x N(0<x<1) layer and a 9-15 nm GaN layer;

[0049] When growing the In x Ga 1-x N(0<x<1) layer, set the reaction chamber temperature to 770-830 degrees and the pressure to 100 Torr - 300 Torr;

[0050] When growing the GaN layer, set the reaction chamber temperature to 870-930 degrees and the pressure to 100 Torr - 300 Torr.

[0051] As described above, the above settings provide a simple and efficient method for growing an In x Ga 1-x N(0<x<1) layer and a GaN layer.

[0052] Further, the S6 is specifically: set the reaction chamber temperature to 850-1080 degrees, the pressure to 100 Torr - 300 Torr, and grow a 100-nm - 800-nm P-type GaN layer 9; complete the preparation of the LED epitaxial structure.

[0053] As described above, the above provides a simple and efficient method for growing a P-type GaN layer.

[0054] Further, it also includes a step S5.5 between S5 and S6;

[0055] The S5.5: set the reaction chamber temperature to 850-1080 degrees, the pressure to 200 Torr - 500 Torr, and grow a 40-90-nm P-type Al y Ga 1-y N(0.1<y<0.5) electron blocking layer 8.

[0056] From the above description, the above provides a simple and efficient growth of P-type Al y Ga 1-y N(0.1<y<0.5) electron blocking layer.

[0057] Embodiment one

[0058] Please refer to the attached Figure 1 The GaN-based epitaxial structure growth method for improving antistatic ability provided in the embodiment comprises the following steps:

[0059] S1: Put the substrate 1 into the reaction cavity, and perform annealing treatment on the substrate in a hydrogen atmosphere for 7-9 minutes; set the reaction cavity temperature to 950 degrees, and perform nitriding treatment on the substrate;

[0060] S2: Set the reaction cavity temperature to 700 degrees, the pressure to 100 Torr, and grow a 20-nanometer buffer layer 2;

[0061] S3: Set the reaction cavity temperature to 1000 degrees, the pressure to 100 Torr, and keep for 4 minutes;

[0062] S4: Set the reaction cavity temperature to 1050 degrees, the pressure to 100 Torr, and grow a 2-micron U-GaN layer 3;

[0063] S5: Set the reaction cavity temperature to 800 degrees, the pressure to 100 Torr, and grow a 20-nanometer N-type AlGaN layer 4, wherein the molar incorporation amount of Al is 0-0.3;

[0064] S6: Set the reaction cavity temperature to 1000 degrees, the pressure to 100 Torr, and grow a 2-micron Si-doped N-GaN layer 5, wherein the Si doping concentration is 10 18 atom / cm 3 ;

[0065] S7: Grow a 10-nanometer Si-doped N-AlGaN layer and a 5-15-nanometer GaN layer in sequence;

[0066] When growing the Si-doped N-AlGaN layer, set the reaction cavity temperature to 900 degrees, the pressure to 100 Torr, and the Si doping concentration to 10 18 atom / cm 3 ;

[0067] When growing the GaN layer, set the reaction cavity temperature to 900 degrees, the pressure to 100 Torr;

[0068] S8: Repeat the S7 for 8-10 times to form a stress release layer 6;

[0069] S9: Grow a 3-nanometer Inx Ga 1-x N(0<x<1) layer and a 9-nanometer GaN layer;

[0070] Growth of In x Ga 1-x N(0<x<1) layer, the reaction chamber temperature is set to 770 degrees, and the pressure is 100 Torr;

[0071] Growth of GaN layer, the reaction chamber temperature is set to 870 degrees, and the pressure is 100 Torr;

[0072] S10: The S9 is repeated 14-16 times to form a multi-quantum well layer 7;

[0073] S11: The reaction chamber temperature is set to 850 degrees, the pressure is 200 Torr, and a 40-nanometer P-type Al y Ga 1-y N(0.1<y<0.5) electron blocking layer 8 is grown;

[0074] S12: The reaction chamber temperature is set to 850 degrees, the pressure is 100 Torr, and a 100-nanometer P-type GaN layer 9 is grown;

[0075] S13: The reaction chamber temperature is set to 850 degrees, the pressure is 100 Torr, and a 5-nanometer P-type contact layer 10 is grown;

[0076] S14: The reaction chamber temperature is set to 650 degrees, and the process is continued for 5 minutes to complete the preparation of the LED epitaxial structure.

[0077] Example Two

[0078] Please refer to the attached Figure 1 The GaN-based epitaxial structure growth method for improving the antistatic capability provided in this embodiment includes the following steps:

[0079] S1: The substrate is placed in a reaction chamber, and the substrate is annealed in a hydrogen atmosphere for 7-9 minutes; the reaction chamber temperature is set to 950-1150 degrees for nitrogenation treatment of the substrate;

[0080] S2: The reaction chamber temperature is set to 800 degrees, and the pressure is 200 Torr to grow a 30-nanometer buffer layer;

[0081] S3: The reaction chamber temperature is set to 1000-1200 degrees, and the pressure is 200 Torr, and the process is continued for 4-8 minutes;

[0082] S4: The reaction chamber temperature is set to 1050-1150 degrees, and the pressure is 200 Torr to grow a 2-4-micron U-GaN layer;

[0083] S5: set the reaction chamber temperature to 900 degrees, the pressure to 300 Torr, and grow an N-type AlGaN layer of 80 nm in which the molar incorporation amount of Al is 0-0.3;

[0084] S6: set the reaction chamber temperature to 1050 degrees, the pressure to 200 Torr, and grow a Si-doped N-GaN layer of 2.5 microns in which the doping concentration of Si is 5*10 18 atom / cm 3 ;

[0085] S7: sequentially grow a Si-doped N-AlGaN layer of 20 nm and a GaN layer of 10 nm;

[0086] When growing the Si-doped N-AlGaN layer, set the reaction chamber temperature to 900-1200 degrees, the pressure to 100 Torr-300 Torr, and the doping concentration of Si to 5*10 18 atom / cm 3 ;

[0087] When growing the GaN layer, set the reaction chamber temperature to 900-1200 degrees, the pressure to 100 Torr-300 Torr;

[0088] S8: repeat the S7 cycle 8-10 times to form a stress release layer;

[0089] S9: sequentially grow an In x Ga 1-x N(0 < x < 1) layer of 3-5 nm and a GaN layer of 9-15 nm;

[0090] When growing the In x Ga 1-x N(0 < x < 1) layer, set the reaction chamber temperature to 800 degrees, the pressure to 100 Torr-300 Torr;

[0091] When growing the GaN layer, set the reaction chamber temperature to 900 degrees, the pressure to 200 Torr;

[0092] S10: repeat the S9 cycle 14-16 times to form a multi-quantum well layer;

[0093] S11: set the reaction chamber temperature to 850-1080 degrees, the pressure to 200 Torr-500 Torr, and grow a P-type Al y Ga 1-y N(0.1 < y < 0.5) electron blocking layer of 40-90 nm;

[0094] S12: set the reaction chamber temperature to 890 degrees, the pressure to 200 Torr, and grow a P-type GaN layer of 450 nm;

[0095] S13: set the temperature of the reaction chamber to 850-1080 degrees, the pressure to 100 Torr-300 Torr, and grow a 150-nanometer P-type contact layer;

[0096] S14: set the temperature of the reaction chamber to 650-850 degrees, and maintain for 5-15 minutes, to complete the preparation of the LED epitaxial structure.

[0097] Embodiment Three

[0098] Please refer to the accompanying drawings Figure 1 The GaN-based epitaxial structure growth method for improving the antistatic capability provided in this embodiment includes the following steps:

[0099] S1: place the substrate into the reaction chamber, perform annealing treatment on the substrate in a hydrogen atmosphere, and maintain for 9 minutes; set the temperature of the reaction chamber to 1150 degrees, and perform nitridation treatment on the substrate;

[0100] S2: set the temperature of the reaction chamber to 900 degrees, the pressure to 300 Torr, and grow a 40-nanometer buffer layer;

[0101] S3: set the temperature of the reaction chamber to 1200 degrees, the pressure to 300 Torr, and maintain for 8 minutes;

[0102] S4: set the temperature of the reaction chamber to 1150 degrees, the pressure to 300 Torr, and grow a 4-micron U-GaN layer;

[0103] S5: set the temperature of the reaction chamber to 1100 degrees, the pressure to 500 Torr, and grow a 150-nanometer N-type AlGaN layer, wherein the molar incorporation amount of Al is 0.3;

[0104] S6: set the temperature of the reaction chamber to 1100 degrees, the pressure to 300 Torr, and grow a 3-micron Si-doped N-GaN layer, wherein the doping concentration of Si is 10 19 atom / cm 3 ;

[0105] S7: sequentially grow a 10-30-nanometer Si-doped N-AlGaN layer and a 15-nanometer GaN layer;

[0106] When growing the Si-doped N-AlGaN layer, set the temperature of the reaction chamber to 1200 degrees, the pressure to 100 Torr-300 Torr, and wherein the doping concentration of Si is 10 19 atom / cm 3 ;

[0107] When growing the GaN layer, set the temperature of the reaction chamber to 1200 degrees, the pressure to 300 Torr;

[0108] S8: repeat the S7 for 8-10 times to form a stress release layer;

[0109] S9: Grow In x Ga 1-x N(0 < x < 1) layers and 9 - 15 nm GaN layers in sequence;

[0110] When growing In x Ga 1-x N(0 < x < 1) layers, set the reaction chamber temperature to 830 °C and the pressure to 300 Torr;

[0111] When growing GaN layers, set the reaction chamber temperature to 870 - 930 °C and the pressure to 100 Torr - 300 Torr;

[0112] S10: Repeat the process of S9 for 14 - 16 times to form a multi - quantum well layer;

[0113] S11: Set the reaction chamber temperature to 850 - 1080 °C and the pressure to 200 Torr - 500 Torr, and grow a 40 - 90 nm P - type Al y Ga 1-y N(0.1 < y < 0.5) electron blocking layer;

[0114] S12: Set the reaction chamber temperature to 850 - 1080 °C and the pressure to 100 Torr - 300 Torr, and grow a 100 nm - 800 nm P - type GaN layer;

[0115] S13: Set the reaction chamber temperature to 850 - 1080 °C and the pressure to 100 Torr - 300 Torr, and grow a 5 - 300 nm P - type contact layer;

[0116] S14: Set the reaction chamber temperature to 650 - 850 °C for 5 - 15 minutes to complete the preparation of the LED epitaxial structure.

[0117] Comparative Example

[0118] Please refer to the attached Figure 2 , where the solid line in the figure is the curve obtained by testing the optoelectronic properties of multiple LED epitaxial structures produced using the solution of Example 2 of this application.

[0119] The dashed line in the figure is the curve obtained by testing the optoelectronic properties of multiple LED epitaxial structures produced using a conventional solution. The only difference between the conventional solution and the solution of Example 2 of this application is that steps S7 and S8 are not included.

[0120] It can be seen from the comparison of the two curves that the anti-static ability of the dotted line slowly decreases with the increase of the voltage, and when the voltage reaches 2000V, the anti-static ability rapidly decreases, and when the voltage is 4000V, the anti-static ability decreases to 0; the anti-static ability of the plurality of LED epitaxial structures produced by the scheme of the second embodiment of the application still maintains a high level of about 80% when the voltage is 4000V, and when the voltage exceeds 4000V, the anti-static ability begins to decrease, and when the voltage is 8000V, the anti-static ability reaches the minimum value.

[0121] Therefore, the scheme of the application can greatly improve the anti-static ability of the LED epitaxial structure.

[0122] The above description is only an embodiment of the application, and does not limit the patent scope of the application, and any equivalent transformation or direct or indirect application in the related technical field by using the content of the specification and drawings of the application is also included in the patent protection scope of the application.

Claims

1. A method for growing GaN-based epitaxial structures with improved antistatic properties, characterized in that, Includes the following steps: S1: Place the substrate into the reaction chamber and grow an N-type AlGaN layer; S2: Set the reaction chamber temperature to 1000-1100 degrees Celsius and the pressure to 100-300 Torr to grow a 2-3 micrometer Si-doped N-GaN layer, wherein the Si doping concentration is 10. 18 -10 19 atom / cm 3 ; S3: Sequentially grow a 10-30 nm Si-doped N-AlGaN layer and a 5-15 nm GaN layer; When growing Si-doped N-AlGaN layers, the reaction chamber temperature is set to 900-1200 degrees Celsius, and the pressure to 100-300 Torr, with a Si doping concentration of 10%. 18 -10 19 atom / cm 3 ; When growing GaN layers, the reaction chamber temperature is set to 900-1200 degrees Celsius and the pressure to 100-300 Torr. S4: Repeat S3 8-10 times; S5: Growth of multiple quantum well layers; S6: Grow a P-type GaN layer; complete the fabrication of the LED epitaxial structure.

2. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 1, characterized in that, Specifically, S1 is: The substrate is placed in the reaction chamber and annealed in a hydrogen atmosphere for 7-9 minutes; the reaction chamber temperature is set to 950-1150 degrees Celsius, and the substrate is nitrided; an N-type AlGaN layer is grown.

3. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 1, characterized in that, Specifically, S1 is: The substrate is placed in the reaction chamber, the temperature of the reaction chamber is set to 700-900 degrees, the pressure is 100-300 Torr, and a buffer layer of 20-40 nanometers is grown; an N-type AlGaN layer is grown.

4. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 1, characterized in that, S1 specifically involves: placing the substrate into the reaction chamber, growing a buffer layer, performing annealing treatment, growing a U-GaN layer, and growing an N-type AlGaN layer.

5. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 4, characterized in that, The "annealing treatment" in S1 specifically refers to setting the reaction chamber temperature to 1000-1200 degrees Celsius and the pressure to 100-300 Torr for 4-8 minutes.

6. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 4, characterized in that, The "growth of U-GaN layer" in S1 specifically refers to: setting the reaction chamber temperature to 1050-1150 degrees and the pressure to 100 Torr-300 Torr, and growing a 2-4 micrometer U-GaN layer.

7. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 1, characterized in that, S1 specifically involves: placing the substrate into the reaction chamber, setting the reaction chamber temperature to 800-1100 degrees Celsius and the pressure to 100-500 Torr, and growing an N-type AlGaN layer of 20-150 nanometers, wherein the molar doping amount of Al is 0-0.

3.

8. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 1, characterized in that, S5 includes S5.1 and S5.2; S5.1: Sequentially growing 3-5 nanometer In... x Ga 1-x N-layer and 9-15 nm GaN layer; S5.2: Repeat S5.1 14-16 times.

9. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 8, characterized in that, Specifically, S5.1 involves sequentially growing 3-5 nanometer-sized In atoms. x Ga 1-x N-layer and 9-15 nm GaN layer; Growth In x Ga 1-x When N layers are used, the reaction chamber temperature is set to 770-830 degrees Celsius and the pressure to 100 Torr-300 Torr. When growing GaN layers, the reaction chamber temperature is set to 870-930 degrees Celsius and the pressure to 100-300 Torr.

10. The method for growing GaN-based epitaxial structures with improved antistatic properties according to claim 1, characterized in that, Specifically, S6 involves setting the reaction chamber temperature to 850-1080 degrees Celsius and the pressure to 100-300 Torr, growing a 100-800 nanometer P-type GaN layer, and completing the fabrication of the LED epitaxial structure.

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