A carrier head and chemical mechanical polishing apparatus of 8 inches or less in size

Abstract

The application discloses a 8-inch or smaller size carrier head and a chemical mechanical polishing device, the carrier head comprising a base, a retaining ring, an air film, a compression ring, a first clasp ring and a second clasp ring; the air film comprises a bottom plate formed in a circular shape, a sidewall extending vertically upward along the outer periphery of the bottom plate, the top of the sidewall extends inwardly and then outwardly to be pressed and fixed by the compression ring and the retaining ring to form a bending part; the air film further comprises an inner partition wall formed by extending inwardly and then upwardly from the sidewall; the first clasp ring is positioned along the outer side surface of the bending part of the sidewall and the second clasp ring is positioned along the inner side surface of the bending part of the sidewall to clamp the bending part together.

Description

Technical Field

[0001] This invention relates to the field of chemical mechanical polishing technology, and more particularly to a carrier head of 8 inches or smaller and a chemical mechanical polishing device. Background Technology

[0002] Chemical mechanical polishing (CMP) is an ultra-precision surface finishing technique that achieves global planarization. This polishing method typically places the wafer under a support head, with the wafer's deposited surface resting against a rotating polishing pad. The support head, driven by a drive unit, rotates in the same direction as the polishing pad and applies a downward load to the wafer. Simultaneously, polishing fluid is supplied between the polishing pad and the wafer, achieving material removal from the wafer through the combined chemical and mechanical action.

[0003] Small-sized carrier heads, such as 8-inch or 6-inch carrier heads, have limited internal space and restricted partitioning, resulting in weak pressure control and an inability to achieve more precise control over wafer polishing. Summary of the Invention

[0004] This invention provides a carrier head and chemical mechanical polishing equipment with a size of 8 inches or smaller, which aims to solve at least one of the technical problems existing in the prior art.

[0005] A first aspect of the present invention provides a carrier head of 8 inches or smaller, including a base, a retaining ring, an air film, a pressure ring, a first retaining ring, and a second retaining ring;

[0006] The air film includes a circular base plate and a side wall extending vertically upward along the outer periphery of the base plate. The top of the side wall extends inward and then bends outward to be pressed and fixed by the pressure ring and the retaining ring to form a bent portion.

[0007] The air film also includes an inner partition wall formed by extending horizontally inward from the side wall and then upward;

[0008] The first retaining ring engages and positions the bent portion together along the outer surface of the bend in the sidewall and the second retaining ring along the inner surface of the bend in the sidewall.

[0009] In one embodiment, the thickness of the sidewall below the inner partition is greater than the thickness of the sidewall above it.

[0010] In one embodiment, the thickness of the sidewall below the inner partition wall decreases as the height decreases, forming a trapezoidal sidewall structure.

[0011] In one embodiment, the second retaining ring is composed of annular walls and horizontal walls.

[0012] In one embodiment, a through hole penetrating the second retaining ring is provided at the lower outer periphery of the horizontal wall, so that gas can be discharged from the through hole and act on the root of the horizontal wall and press down the edge of the gas film through the trapezoidal sidewall structure.

[0013] In one embodiment, the inner partition extends upward to be flush with the second retaining ring, and its upper end engages with the base.

[0014] In one embodiment, the bending portion is composed of an annular first horizontal plate, a vertical plate, a second horizontal plate, and an oblique fixed plate.

[0015] In one embodiment, the first horizontal plate extends horizontally inward along the top of the sidewall, and the vertical plate extends vertically upward along the inner edge of the first horizontal plate until it is flush with the second retaining ring, and then extends horizontally outward to form the second horizontal plate.

[0016] In one embodiment, the width of the second horizontal plate is 30% to 75% of the width of the first horizontal plate.

[0017] In one embodiment, a clamping ring is provided on the upper surface of the second horizontal plate, which is disposed on the top surface of the second retaining ring and clamps and fixes the second horizontal plate to the upper surface of the first retaining ring.

[0018] A second aspect of the present invention provides a chemical mechanical polishing apparatus, including a bearing head as described above, and further including a polishing disc, a dressing device, and a polishing slurry supply device.

[0019] The beneficial effects of the embodiments of the present invention include: the ability to precisely control the morphology of wafer edge polishing. Attached Figure Description

[0020] The advantages of the present invention will become clearer and easier to understand through the detailed description taken in conjunction with the following accompanying drawings, but these drawings are merely illustrative and do not limit the scope of protection of the present invention, wherein:

[0021] Figure 1 A chemical mechanical polishing apparatus according to an embodiment of the present invention is shown;

[0022] Figure 2 This invention illustrates a carrier head provided in one embodiment of the present invention;

[0023] Figure 3 A carrier head provided by another embodiment of the present invention is shown. Detailed Implementation

[0024] The technical solutions of the present invention will be described in detail below with reference to specific embodiments and accompanying drawings. The embodiments described herein are specific implementations of the present invention, used to illustrate the concept of the present invention; these descriptions are explanatory and exemplary, and should not be construed as limiting the implementation methods and scope of protection of the present invention. It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein. It should be understood that, unless specifically stated otherwise, for ease of understanding, the following description of specific embodiments of the present invention is based on the premise that the relevant equipment, devices, components, etc., are in their original static state and are not given external control signals or driving forces.

[0025] Furthermore, it should be noted that the terms used in this application to indicate orientation, such as front, back, up, down, left, right, top, bottom, front, back, horizontal, and vertical, are merely for ease of explanation and to aid in the understanding of relative position or direction, and are not intended to limit the orientation of any device or structure.

[0026] To illustrate the technical solution described in this invention, the following description will be provided with reference to the accompanying drawings and embodiments.

[0027] In this application, chemical mechanical polishing is also called chemical mechanical planarization, and wafer is also called wafer, silicon wafer, substrate, etc., with the same meaning and actual function.

[0028] like Figure 1 As shown, a chemical mechanical polishing (CMP) apparatus 1 provided in an embodiment of the present invention includes a polishing disc 10, a polishing pad 20 bonded to the polishing disc 10, a carrier head 30 for adsorbing and rotating a wafer, a dresser 40 for dressing the polishing pad 20, a polishing liquid supply device 50 for supplying polishing liquid to the surface of the polishing pad 20, and a loading bracket. Figure 1 (Not shown).

[0029] Before polishing begins, a robotic arm transports the wafer to a loading tray. The carrier head 30 loads the wafer from the loading tray and moves radially above the polishing disk 10. During chemical mechanical polishing (CMP), the carrier head 30 presses the wafer onto a polishing pad 20 covering the surface of the polishing disk 10. The polishing pad 20 is larger than the wafer to be polished, for example, 1.2 times or more, to ensure uniform polishing. The carrier head 30 rotates and reciprocates radially along the polishing disk 10, gradually removing surface imperfections from the wafer in contact with the polishing pad 20. Simultaneously, the polishing disk 10 rotates, and the polishing slurry supply device 50 sprays polishing slurry onto the surface of the polishing pad 20. Under the chemical action of the polishing slurry, the relative movement between the carrier head 30 and the polishing disk 10 causes friction between the wafer and the polishing pad 20 for polishing. A polishing slurry composed of submicron or nano-sized abrasive particles and a chemical solution flows between the wafer and the polishing pad 20. Under the influence of the centrifugal force of the polishing pad 20, the slurry is uniformly distributed to form a thin liquid film between the wafer and the polishing pad 20. The chemical components in the liquid react with the wafer, converting insoluble substances into soluble substances. These reactants are then removed from the wafer surface by the micromechanical friction of the abrasive particles and carried away by the flowing liquid. This alternating process of chemical film formation and mechanical film removal removes surface material, achieving surface planarization and thus global planarization. During polishing, a dresser 40 is used to trim and activate the surface morphology of the polishing pad 20. The dresser 40 can remove residual impurity particles on the surface of the polishing pad 20, such as abrasive particles in the polishing slurry and waste material detached from the wafer surface. It can also smooth out surface deformation of the polishing pad 20 caused by abrasion, ensuring the consistency of the surface morphology of the polishing pad 20 during polishing and thus maintaining a stable polishing removal rate. After polishing, the carrier head 30 picks up the wafer and places it on the loading tray. The robot arm then takes the wafer from the loading tray and transports it to the post-processing unit.

[0030] Figure 2 and Figure 3 The present invention illustrates a carrier head 30 of 8 inches or smaller, which includes a base 31, a retaining ring 33, an air film 34, a pressure ring 32, a first retaining ring 35, and a second retaining ring 36. Figure 2 and Figure 3The specific structure of the bearing head 30 in the illustrated embodiment is suitable for small-sized bearing heads 30, such as 8 inches, 6 inches, or smaller. Due to space limitations, small-sized bearing heads 30 are difficult to control in zones and have poor edge adjustment capabilities, making it difficult to achieve high-precision zoned pressure regulation and high-consistency edge smoothing and polishing. To solve this problem, this application optimizes the structure of the small-sized bearing head 30, which is described in detail below. Additionally, it should be noted that in this application, "inner," "outer," "towards," and "outer" refer to the center of the air film 34; the area closer to the center of the air film 34 is called "inner," and the area farther away is called "outer."

[0031] like Figure 2 As shown, the base 31 is connected below the pivot and is used to support and fix the retaining ring 33 and the air film 34.

[0032] A retaining ring 33 is mounted below the base 31 and surrounds the gas film 34, the first retaining ring 35, and the second retaining ring 36. During chemical mechanical polishing, a receiving space is formed between the inner diameter surface of the retaining ring 33 and the lower surface of the gas film 34 to contain the wafer. The bottom surface of the retaining ring 33 faces downward and is opposite to the upper surface of the polishing pad. The wafer located inside the retaining ring 33 is pressed against the upper surface of the polishing pad. The retaining ring 33 can prevent the wafer from slipping out of the receiving space and participate in the application of load on the wafer. In addition, the bottom surface of the retaining ring 33 may also be provided with channels for the inflow and outflow of polishing fluid.

[0033] like Figure 2 As shown, a gas film 34 is clamped below the base 31 to form a pressurized chamber. A second retaining ring 36 is positioned inside the pressurized chamber, and a first retaining ring 35 is provided outside the pressurized chamber. The first retaining ring 35 and the second retaining ring 36 are fitted together. The material of the second retaining ring 36 can be titanium alloy or stainless steel. The first retaining ring 35 and the second retaining ring 36 are free to float and can be nested together. When gas is introduced into the pressurized chamber, the pressure inside the chamber increases, and the pressure is transmitted to the wafer through the gas film 34. The second retaining ring 36 and the first retaining ring 35 cooperate to define the position and shape of the gas film 34.

[0034] The first retaining ring 35 and the second retaining ring 36 can be nested together. Specifically, the first retaining ring 35 is annular, and the second retaining ring 36 is composed of an annular wall 361 and a horizontal wall 362. The annular wall 361 extends upward from the upper surface of the horizontal wall 362, and the annular wall 361 is a certain distance from the outer peripheral edge of the horizontal wall 362, thereby forming an annular space in the upper edge region of the second retaining ring 36 that can match the first retaining ring 35. This annular space is used to fit the annular first retaining ring 35 onto the outer periphery of the annular wall 361.

[0035] like Figure 2As shown, in one embodiment, a clamping ring 37 is further provided on the upper surface of the second retaining ring 36, i.e., between the second retaining ring 36 and the base 31. The clamping ring 37 may be made of an elastic material. The clamping ring 37 is used to buffer the collision between the second retaining ring 36 and the base 31 and to compress a portion of the air film 34.

[0036] like Figure 2 As shown, in one embodiment of the present invention, the air film 34 includes a circular base plate 341 and a side wall 342 extending vertically upward along the outer periphery of the base plate 341. The top of the side wall 342 extends inward and then bends outward to be pressed and fixed by the pressure ring 32 and the retaining ring 33 to form a bent portion 343.

[0037] like Figure 2 As shown, the edge of the air film 34 is sandwiched between the retaining ring 33 and the base 31, that is, the edge of the side wall 342 is sandwiched between the retaining ring 33 and the base 31. Specifically, the edge of the side wall 342 is clamped by the pressure ring 32 and the retaining ring 33. The pressure ring 32 is embedded in the bottom of the base 31, and a sealing ring to prevent air leakage is provided between the pressure ring 32 and the base 31. The retaining ring 33 can be fixed to the bottom of the base 31 by means of thread fixing, thereby achieving the clamping of the edge of the air film 34 between the retaining ring 33 and the pressure ring 32.

[0038] like Figure 2 As shown, the sidewall 342 of the air film 34 has a bent portion 343, which bends and extends between a first retaining ring 35 and a second retaining ring 36. The first retaining ring 35 engages and positions the bent portion 343 along the outer surface of the bent portion 343 of the sidewall 342 and the second retaining ring 36 along the inner surface of the bent portion 343 of the sidewall 342. The sidewall 342 extends upward from the outer peripheral edge of the base plate 341, and the bent portion 343 is formed by the sidewall 342 extending inward, upward, and then outward in sequence. Specifically, the sidewall 342 extends upward around the outer peripheral surface of the second retaining ring 36, then extends inward between the bottom surface of the first retaining ring 35 and the second retaining ring 36, then extends upward along the inner peripheral surface of the first retaining ring 35, then extends outward along the top surface of the first retaining ring 35, and the sidewall 342 extends above the top surface of the first retaining ring 35 to attach to the base 31.

[0039] like Figure 2 As shown, the bending part 343 is composed of an annular first horizontal plate, a vertical plate, a second horizontal plate, and an oblique fixed plate.

[0040] The first horizontal plate extends horizontally inward from the top of the side wall 342, and the vertical plate extends vertically upward from the inner edge of the first horizontal plate until it is flush with the second retaining ring 36, and then extends horizontally outward to form the second horizontal plate. The first horizontal plate is located between the bottom surface of the first retaining ring 35 and the top surface of the horizontal wall 362 of the second retaining ring 36. The vertical plate is located between the inner circumferential surface of the first retaining ring 35 and the outer circumferential surface of the annular wall 361 of the second retaining ring 36. The second horizontal plate is attached to the top surface of the first retaining ring 35.

[0041] Furthermore, in one embodiment, the oblique fixing plate of the bent portion 343 is given a pleated structure, that is, the surface of the fixing plate is not smooth, but has bends and pleats. By adding a pleated structure to the fixing plate portion of the air film 34 between the first retaining ring 35 and the retaining ring 33, the axial flexibility of the air film 34 can be improved, and the sensitivity to wear of the retaining ring 33 can be reduced. In other words, even if the bottom surface of the retaining ring 33 is partially worn and the height of the retaining ring 33 is reduced, the bearing head 30 can still work normally. The pleated structure at the edge of the air film 34 can improve the flexibility of the air film 34 and still adapt to the wear of the retaining ring 33.

[0042] In one embodiment, the width of the second horizontal plate is 30% to 75% of the width of the first horizontal plate.

[0043] like Figure 2 As shown, a clamping ring 37 is provided on the upper surface of the second horizontal plate. It is located on the top surface of the second retaining ring 36 and clamps and fixes the second horizontal plate to the upper surface of the first retaining ring 35.

[0044] like Figure 2 As shown, in one embodiment of the present invention, the air film 34 further includes an inner partition wall 344 that extends horizontally inward from the sidewall 342 and then upward. The inner partition wall 344 is formed around the bottom surface and inner peripheral surface of the second retaining ring 36, and extends upward to be flush with the second retaining ring 36, and its upper end is engaged with the base 31.

[0045] like Figure 2 As shown, in one embodiment, the thickness of the sidewall 342 below the inner partition 344 is greater than the thickness of the sidewall 342 above it.

[0046] like Figure 2 As shown, in one embodiment, the thickness of the sidewall 342 below the inner partition 344 decreases as the height decreases, forming a trapezoidal sidewall 342 structure.

[0047] Furthermore, such as Figure 2As shown, the air membrane 34 also includes a first diaphragm 345 and a second diaphragm 346 located inside the inner partition wall 344. The second diaphragm 346 is located inside the first diaphragm 345. Both the first diaphragm 345 and the second diaphragm 346 are annular and can be made of thin, flexible vertical ribs. In this embodiment, the first diaphragm 345 and the second diaphragm 346 located in the middle region of the air membrane 34 are made of vertical ribs, which can prevent collapse between adjacent chambers due to pressure difference and avoid pressure fluctuations in the diaphragm position caused by this.

[0048] like Figure 2 As shown, the air-supported membrane 34 includes a base plate 341, sidewalls 342, inner partitions 344, a first diaphragm 345, and a second diaphragm 346, forming a structure. The air-supported membrane 34 encloses multiple concentric, relatively sealed, adjustable-pressure chambers below the base 31. Specifically, it includes a first chamber Z1, a second chamber Z2, a third chamber Z3, and a fourth chamber Z4, arranged concentrically from the edge to the center. The central fourth chamber Z4 is circular, while the first chamber Z1, second chamber Z2, and third chamber Z3 are concentric annular rings. Figure 2 As shown, the bottom plate 341, side wall 342, and inner partition wall 344 of the air film 34 form a first chamber Z1; the bottom plate 341, inner partition wall 344, and first diaphragm 345 form a second chamber Z2; the bottom plate 341, first diaphragm 345, and second diaphragm 346 form a third chamber Z3; and the bottom plate 341 and the annular second diaphragm 346 form a fourth chamber Z4. Both the first diaphragm 345 and the second diaphragm 346 are formed by the bottom plate 341 of the air film 34 extending vertically upwards.

[0049] The internal pressures of the first chamber Z1, the second chamber Z2, the third chamber Z3, and the fourth chamber Z4 are independent and can be varied separately. Correspondingly, the different pressurized chambers of the bearing head 30 divide the wafer surface into multiple corresponding zones, thereby allowing independent adjustment of the polishing pressure for the four regions corresponding to the wafer surface: the central region, the first intermediate region, the second intermediate region, and the peripheral region. Each pressurized chamber can apply different pressures to its corresponding wafer surface zone. By controlling the pressure of the pressurized air or other fluids supplied to the pressurized chambers, different pressures can be applied to different zones of the wafer surface. Specifically, gas can be introduced into or extracted from the first chamber Z1, the second chamber Z2, the third chamber Z3, and the fourth chamber Z4 through through-holes or fluid channels (not shown) to adjust the pressure of the chamber, thereby precisely adjusting the pressure profile applied to the wafer for more uniform polishing.

[0050] like Figure 2As shown, the second retaining ring 36 is located within the first chamber Z1. When gas is introduced into the first chamber Z1, the gas pressure acts on the second retaining ring 36, thereby applying a downward pressure to the side wall 342 below the inner partition wall 344. Furthermore, when gas is introduced into the second chamber Z2, the gas pressure also acts on the side wall 342 below the inner partition wall 344. Through this dual action, the force exerted by the side wall 342 of the gas film 34 on the wafer edge region via the base plate 341 of the gas film 34 can be adjusted, thereby more precisely controlling the polishing morphology of the wafer edge.

[0051] This embodiment adds multiple pressure zones to the 8-inch or smaller carrier head 30, namely the first chamber Z1, the second chamber Z2, the third chamber Z3, and the fourth chamber Z4, to improve the pressure control capability of the carrier head 30. This allows for better adjustment of the removal rate of different areas on the wafer surface according to requirements, satisfying more process needs. In addition, the edge chamber of the gas film 34 (i.e., the first chamber Z1) adopts a design that reduces the pressure transmitted through the sidewall 342, enabling more precise control over the outer edge polishing.

[0052] like Figure 3 As shown, in one embodiment of the present invention, a through hole 38 penetrating the second retaining ring 36 is provided at the lower outer periphery of the horizontal wall 362, so that gas can be discharged from the through hole 38 and act on the root of the horizontal wall 362 and cause the edge of the gas film 34 to be pressed down via the trapezoidal side wall 342 structure.

[0053] The second retaining ring 36 is provided with a through hole 38, which connects the top surface and the outer peripheral surface of the second retaining ring 36, or the top surface and the bottom surface of the second retaining ring 36. Specifically, the through hole 38 opens on the top surface of the second retaining ring 36 and extends inside the second retaining ring 36, exiting from the outer peripheral surface; or the through hole 38 opens on the top surface of the second retaining ring 36 and extends downward, exiting from the bottom surface. The through hole 38 is used to connect the area above the second retaining ring 36 and the area to the side or below the second retaining ring 36 within the first chamber Z1 to ensure stable gas supply and stable gas pressure.

[0054] Figure 3 The embodiment shown adds a through hole 38 to the second retaining ring 36, which can stabilize the edge pressure, that is, stabilize the pressure in the first chamber Z1. It will not cause the edge to be unable to press or vent due to the compaction between the second retaining ring 36 and the air film 34, thus ensuring the adjustability of the edge pressure.

[0055] In summary, this application has the following advantages:

[0056] (1) Multiple pressure chambers can be arranged inside the air film 34, and more precise control of wafer polishing can be achieved by adjusting the pressure.

[0057] (2) Increasing the thickness of the lower half of the sidewall 342 of the air film 34 can prevent wear;

[0058] (3) The design of the side wall 342 and inner partition wall 344 of the air film 34, as well as the design of the first diaphragm 345 and the second diaphragm 346 located in the middle area of ​​the air film 34 with vertical ribs, can effectively reduce the complex influence of tension and pressure state and pressure difference on the pressure transmitted by the bottom plate 341 of the air film 34.

[0059] (4) The inclined fixing plate of the air film 34 is designed with pleats to prevent the failure of loading or unloading due to insufficient axial flexibility during the loading or unloading process.

[0060] The accompanying drawings in this specification are schematic diagrams used to illustrate the concept of the invention and to schematically show the shapes of the various parts and their interrelationships. It should be understood that, in order to clearly show the structure of the various components of the embodiments of the invention, the drawings are not drawn to the same scale, and the same reference numerals are used to indicate the same parts in the drawings.

[0061] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0062] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A bearing head of 8 inches or smaller, characterized in that, Includes a base, retaining ring, air film, pressure ring, first retaining ring, and second retaining ring; The air film includes a circular base plate and a side wall extending vertically upward along the outer periphery of the base plate. The top of the side wall extends inward and then bends outward to be pressed and fixed by the pressure ring and the retaining ring, forming a bent part. The air membrane also includes an inner partition wall that extends horizontally inward from the side wall and then upward. The inner partition wall is formed around the bottom surface and inner circumferential surface of the second retaining ring and extends upward to be flush with the second retaining ring. Its upper end is engaged with the base. The air membrane also includes a first diaphragm located inside the inner diaphragm wall. The sidewall of the air membrane and the inner diaphragm wall form a first chamber, and the sidewall, bottom plate, inner diaphragm wall and first diaphragm of the air membrane form a second chamber. The first retaining ring engages with the outer surface of the bend in the sidewall and the second retaining ring engages with the inner surface of the bend in the sidewall to position the bend.

2. The bearing head as described in claim 1, characterized in that, The thickness of the sidewall below the inner partition is greater than the thickness of the sidewall above it.

3. The bearing head as described in claim 2, characterized in that, The thickness of the sidewall below the inner partition wall decreases as the height decreases, forming a trapezoidal sidewall structure.

4. The bearing head as described in claim 3, characterized in that, The second retaining ring is composed of annular walls and horizontal walls.

5. The bearing head as described in claim 4, characterized in that, A through hole penetrating the second retaining ring is provided at the lower outer periphery of the horizontal wall, so that gas can be discharged from the through hole and act on the root of the horizontal wall and press down the edge of the gas film through the trapezoidal side wall structure.

6. The bearing head as described in claim 1, characterized in that, The bending section is composed of a first horizontal plate, a vertical plate, a second horizontal plate, and an oblique fixed plate.

7. The bearing head as described in claim 6, characterized in that, The first horizontal plate extends horizontally inward along the top of the side wall, and the vertical plate extends vertically upward along the inner edge of the first horizontal plate until it is flush with the second retaining ring, and then extends horizontally outward to form the second horizontal plate.

8. The bearing head as described in claim 7, characterized in that, The width of the second horizontal plate is 30% to 75% of that of the first horizontal plate.

9. The bearing head as described in claim 8, characterized in that, A clamping ring is provided on the upper surface of the second horizontal plate, which is located on the top surface of the second retaining ring and clamps and fixes the second horizontal plate to the upper surface of the first retaining ring.

10. A chemical mechanical polishing apparatus, characterized in that, The device includes the bearing head as described in any one of claims 1 to 9, and further includes a polishing disc, a dresser, and a polishing fluid supply device.

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