Solar cell and method of manufacturing the same

By optimizing the thickness and concentration of boron-doped amorphous silicon layers and adopting single-layer or multi-layer stacked structures, the instability of boron-doped amorphous silicon structures during storage was solved, improving the stability and efficiency of solar cells, and achieving stability of cell series resistance and photoelectric conversion efficiency.

CN116247111BActive Publication Date: 2026-07-07嘉兴阿特斯阳光能源科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
嘉兴阿特斯阳光能源科技有限公司
Filing Date
2021-12-07
Publication Date
2026-07-07

AI Technical Summary

Technical Problem

Boron-doped amorphous silicon structures are unstable during storage, leading to a decrease in effective boron doping concentration, reduced conductivity, increased battery series resistance, and decreased photoelectric conversion efficiency.

Method used

The thickness and concentration of boron-doped amorphous silicon layers are optimized by using single-layer or multi-layer stacked structures. By adjusting the flow ratio and deposition rate of silane, hydrogen and gaseous boron sources, a boron-doped amorphous silicon layer with a thickness of 4nm to 6nm is formed, ensuring that the B:Si atomic ratio is between 1.5:100 and 11:100.

Benefits of technology

This improves the stability and efficiency of solar cells, reduces the impact of conductivity variations on series resistance, and enhances the overall performance of the cells.

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Abstract

The application provides a solar cell and a preparation method thereof. The solar cell comprises a silicon base, a first intrinsic amorphous silicon layer, a phosphorus-doped amorphous silicon layer, a first ITO layer and a first metal electrode which are sequentially arranged on a first side of the silicon base, a second intrinsic amorphous silicon layer, a boron-doped amorphous silicon layer, a second ITO layer and a second metal electrode which are sequentially arranged on a second side of the silicon base, and the thickness of the boron-doped amorphous silicon layer is 4-6 nm. The stability of the boron-doped amorphous silicon layer is improved by optimizing the thickness of the boron-doped amorphous silicon layer, and the stability of the solar cell is improved.
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