GaAs high-power laser epitaxial wafer with strain-compensated quantum well structure and preparation method thereof

Abstract

The application provides a GaAs high-power laser epitaxial wafer with strain compensation quantum well structure and a preparation method thereof, and belongs to the field of optoelectronics. From bottom to top, the epitaxial wafer comprises a buffer layer, an N confinement layer, an AlGaAs lower waveguide layer, an AlGaAs lower barrier layer, a GaAsP quantum well layer, a GaAs barrier layer one, an InGaAs quantum well layer, a GaAs barrier layer two, a GaAsP quantum well layer, an AlGaAs upper barrier layer, an AlGaAs upper waveguide layer, a P confinement layer and a GaAs ohmic contact layer. The application adds a quantum well larger than the band gap width before and after the quantum well of the epitaxial structure, completes the strain compensation of the quantum well by only using a mode within 10 nm, and further concentrates the light field in the InGaAs quantum well by using the refractive index difference, so that the optical gain of the quantum well is improved. The application completely makes up for the problems of the wide waveguide structure, such as the poor divergence angle and beam quality under the premise of high power.

Description

Technical Field

[0001] This invention relates to a strain-compensated quantum well structure GaAs high-power laser epitaxial wafer and its fabrication method, belonging to the field of optoelectronic technology. Background Technology

[0002] High-power semiconductor lasers have seen increasingly widespread application in recent years in fields such as industrial processing, laser communication, medical aesthetics, automotive radar, and military applications due to their advantages of simple fabrication, small size, and high power. During this period, research on semiconductor lasers has primarily focused on improving output power levels. The simplest and most effective way to increase output power is to increase the effective gain area of ​​the light, leading to the widespread use of wide waveguide structures based on this theory. While wide waveguide structures can improve power, at higher operating currents, the laser generates higher-order lateral modes and virtual waists, resulting in increased divergence angles and beam jitter. Furthermore, with increasing current injection, the device may experience localized overheating, severely impacting long-term reliability.

[0003] Improving the divergence angle and enhancing beam quality while ensuring output power has become a recent research focus for wide waveguide structures. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure and its fabrication method.

[0005] The present invention adopts the following technical solution:

[0006] A strain-compensated quantum well structure GaAs high-power laser epitaxial wafer, comprising, from bottom to top, a GaAs buffer layer, an Al layer, and an Al layer on a GaAs substrate. x1 Ga 1-x1 As N confinement layer, Al x2 Ga 1-x2 As lower waveguide layer, Al x3 Ga 1-x3 As lower barrier layer, GaAs x4 P 1-x4 Quantum well layer, GaAs barrier layer 1, In x5 Ga 1-x5 As quantum well layer, GaAs barrier layer II, GaAs x6 P 1-x6 Quantum well layer, Al y1 Ga 1-y1 As upper base, Al y2 Ga 1-y2 As upper waveguide layer, Al y3 Ga 1-y3As P confinement layer and GaAs ohmic contact layer, wherein 0.2≤x1≤0.5, 0.2≤x2≤0.3, 0.1≤x3≤0.4, 0.7≤x4≤0.9, 0.1≤x5≤0.3, 0.7≤x6≤0.9, 0.1≤y1≤0.4, 0.2≤y2≤0.3, 0.2≤y2≤0.3;

[0007] In x5 Ga 1-x5 The thickness of the As quantum well layer is 5-10 nm, GaAs x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The thickness of the quantum well layers is 5-10 nm.

[0008] Preferred, In x5 Ga 1-x5 The emission wavelength of the As quantum well layer is 915 nm. (GaAs) x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The emission wavelength of the quantum well layer is 830 nm.

[0009] A method for fabricating a GaAs high-power laser epitaxial wafer with the above-mentioned strain-compensated quantum well structure includes the following steps:

[0010] (1) Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 730-750℃ and bake for 20-40 minutes, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen on the substrate surface, in preparation for step (2).

[0011] (2) When the temperature of the reaction chamber drops to 700-720℃, TMGa and AsH3 are introduced to grow a GaAs buffer layer with a thickness of 100-300nm on the GaAs substrate.

[0012] (3) When the reaction chamber temperature drops to 640-680℃, TMAl, TMGa and AsH3 are introduced to grow Al on the GaAs buffer layer. x1 Ga 1-x1 As N confinement layer, with a thickness of 2-3 μm;

[0013] (4) Maintain the temperature at 640-680℃. After step (3) is completed, introduce TMAl, TMGa and AsH3 to grow Al. x2 Ga 1- x2 The As waveguide layer has a thickness of 0.8-1.5 μm;

[0014] (5) Maintain the temperature at 640-680℃. After step (4) is completed, introduce TMAl, TMGa and AsH3 to grow Al. x3 Ga 1- x3 As lower barrier layer, with a thickness of 100-300 nm;

[0015] (6) Keep the temperature at 540-580℃. After step (5) is completed, continue to grow GaAs with a thickness of 5-10 nm. x4 P 1-x4 Quantum well layer;

[0016] (7) Keep the temperature at 540-580℃. After step (6) is completed, introduce TMGa and AsH3 to grow GaAs barrier layer one with a thickness of 20-50nm.

[0017] (8) Maintain the temperature at 540-580℃. After step (7) is completed, introduce TMI, TMGa and AsH3 to grow In. x5 Ga 1- x5 As quantum well layer, with a thickness of 5-10 nm;

[0018] (9) Keep the temperature at 540-580℃. After step (8) is completed, introduce TMGa and AsH3 to grow GaAs barrier layer II with a thickness of 20-50nm.

[0019] (10) Keep the temperature at 540-580℃. After step (9) is completed, continue to grow GaAs with a thickness of 5-10 nm. x6 P 1-x6 Quantum well layer;

[0020] (11) Maintain the temperature at 640-680℃. After step (10) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y1 Ga 1-y1 As top barrier layer, with a thickness of 100-300nm;

[0021] (12) Maintain the temperature at 640-680℃. After step (11) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y2 Ga 1-y2 As waveguide layer with a thickness of 0.2-0.6 μm;

[0022] (13) Maintain the temperature at 640-680℃. After step (12) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y3 Ga 1-y3 As P confinement layer, with a thickness of 0.4-0.8 μm;

[0023] (14) When the reaction chamber temperature drops to 540-560℃, TMGa and AsH3 are introduced into Al. y3 Ga 1-y3 GaAs ohmic contact layers with a thickness of 300-600 nm are grown on As P confinement layers.

[0024] Preferably, the high-temperature heat treatment temperature in step (1) is 740°C and the baking time is 30 minutes;

[0025] The reaction chamber temperature in step (2) is 710℃, the growth thickness is 300nm, and the doping concentration is 1E18-3E18 atoms / cm. 3 Preferably 2E18 atoms / cm 3 The doping source is Si2H6;

[0026] Preferably, the reaction chamber temperature in step (3) is 650℃, the growth thickness is 2.5μm, 0.2≤x1≤0.5, and the doping concentration is 5E17-2E18 atoms / cm². 3 ;

[0027] More preferably, in step (3), x1 = 0.3, and the doping concentration is 1E18 atoms / cm³. 3 The doping source is Si2H6.

[0028] Preferably, the reaction chamber temperature in step (4) is 650℃, the growth thickness is 0.9μm, 0.2≤x2≤0.3, and the doping concentration is 5E17-2E18 atoms / cm². 3 ;

[0029] Preferably, in step (4), x2 = 0.25, and the doping concentration is 5E17 atoms / cm³. 3 The doping source is Si2H6;

[0030] Further preferably, the reaction chamber temperature in step (5) is 650℃, the growth thickness is 150nm, and 0.1≤x3≤0.4, preferably x3=0.15.

[0031] Preferably, the reaction chamber temperature in step (6) is 550°C, and the growth thickness is 7 nm for GaAs. x4 P 1-x4 In the quantum well, the value of x4 is 0.7-0.9, and the preferred value of x4 is 0.8;

[0032] Preferably, the reaction chamber temperature in step (7) is 550°C and the growth thickness is 30 nm.

[0033] Preferably, the reaction chamber temperature in step (8) is 550°C, the growth thickness is 7 nm, and 0.1 ≤ x5 ≤ 0.3, preferably x5 = 0.15;

[0034] Preferably, the reaction chamber temperature in step (9) is 550°C and the growth thickness is 30 nm.

[0035] Preferably, the reaction chamber temperature in step (10) is 550°C, and the growth thickness is 7 nm for GaAs. x6 P 1-x6 In the quantum well, x6 takes values ​​ranging from 0.7 to 0.9;

[0036] Preferably, in step (10) GaAs x6 P 1-x6 The value of x6 in the quantum well is 0.8.

[0037] Preferably, the reaction chamber temperature in step (11) is 650℃, the growth thickness is 150nm, and 0.1≤x3≤0.4, preferably x3=0.15;

[0038] Preferably, the reaction chamber temperature in step (12) is 650℃, the growth thickness is 0.4μm, 0.2≤y2≤0.3, and the doping concentration is 1E17-9E17 atoms / cm². 3 ;

[0039] In the preferred step (12), y2 = 0.25, and the doping concentration is 5E17 atoms / cm³. 3 The doping source is CBr4.

[0040] Preferably, the reaction chamber temperature in step (13) is 650℃, the growth thickness is 0.5μm, 0.6≤y3≤0.9, and the doping concentration is 9E17-5E18 atoms / cm². 3 ;

[0041] In the preferred step (13), y3 = 0.8, and the doping concentration is 1E18 atoms / cm³. 3 The doping source is CBr4;

[0042] Preferably, the reaction chamber temperature in step (14) is 550°C, the growth thickness is 500 nm, and the doping concentration is 9E18-5E19 atoms / cm². 3 ;

[0043] Preferably, the doping concentration in step (14) is 3E19 atoms / cm³. 3 The doping source is CBr4.

[0044] In this patent, Si2H6 is selected for doping on the N side and CBr4 is selected for doping on the P side. The role of doping on the N side is to provide electrons, and the potential difference created by the change in the doping gradient is conducive to the migration of electrons into the quantum well. The role of doping on the P side is to provide holes, and the potential difference created by the change in the doping gradient is conducive to the migration of holes into the quantum well, ultimately realizing the recombination of holes and electrons in the quantum well.

[0045] Where this invention is not detailed, existing technologies may be used.

[0046] The beneficial effects of this invention are as follows:

[0047] The core technology of this invention is to add a quantum well much larger than the bandgap before and after the epitaxial quantum well. For example, in this invention, a GaAsP quantum well is grown before and after the InGaAs quantum well. The InGaAs quantum well emits light at a wavelength of 915 nm with a compressive strain of 1.5%, while the GaAsP quantum well emits light at a wavelength of 830 nm with a tensile strain of 0.75%. A GaAs layer is used as a transition between the GaAsP and InGaAs quantum wells. There is a significant mismatch between the InGaAs material and the gallium arsenide (GaAs) substrate. To improve the internal quantum efficiency of the quantum well and eliminate degeneracy effects, high-power quantum wells typically use increased strain, which further increases the risk of mismatch. The method of growing a GaAsP quantum well before and after the InGaAs quantum well used in this invention has the following advantages:

[0048] 1. InGaAs quantum wells exhibit compressive strain, while GaAsP quantum wells exhibit tensile strain. This can be used to compensate for quantum well strain. Common methods for quantum well strain compensation, such as changing the waveguide layer composition or using compositional gradients, not only disrupt the original optical field distribution and sacrifice quantum well gain, but also lead to unclear growth interfaces, increasing internal resistance and internal loss. The proposed solution utilizes the advantages of thin quantum well structures and large strain improvement, achieving strain compensation within 10 nm. Furthermore, it leverages the refractive index difference to further concentrate the optical field within the InGaAs quantum well, thereby improving the quantum well's optical gain.

[0049] 2. GaAsP quantum wells control the emission wavelength to 830nm by adjusting the P composition. Since the emission wavelength of InGaAs quantum wells is 915nm, the emission peak half-width is 10nm, and the 95% energy width is about 30nm, the 830nm light emitted by GaAsP quantum wells will not affect the emission of InGaAs quantum wells. The lasing of GaAsP quantum wells is determined by the GaAsP strain.

[0050] 3. Due to its wider bandgap than InGaAs quantum wells, GaAsP quantum wells can store electrons and holes, causing the built-in electric field at the InGaAs quantum well interface to reverse, creating a saturable absorber effect. This absorbs higher-order modes and low-energy light, enabling InGaAs quantum wells to operate at high power. Furthermore, the storage of electrons and holes further increases the height of the original barrier layer, achieving greater confinement of charge carriers. The interaction of like charges also promotes carrier migration speed, improving the chip's temperature characteristics and reliability. This completely overcomes the problems of poor divergence angle and beam quality in wide waveguide structures at high power. Attached Figure Description

[0051] Figure 1 This is a schematic diagram of the GaAs high-power laser epitaxial wafer structure of the strain-compensated quantum well structure of the present invention. Detailed implementation method:

[0052] To make the technical problems, technical solutions and advantages of the present invention clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments. However, this description is not limited thereto. All aspects not described in detail in the present invention are based on conventional techniques in the field.

[0053] Example 1

[0054] A strain-compensated quantum well structure GaAs high-power laser epitaxial wafer, such as Figure 1 As shown, the GaAs substrate includes, from bottom to top, a GaAs buffer layer, an Al layer, and an Al layer. x1 Ga 1-x1 As N confinement layer, Al x2 Ga 1-x2 As lower waveguide layer, Al x3 Ga 1-x3 As under-barrier layer, GaAs x4 P 1-x4 Quantum well layer, GaAs barrier layer 1, In x5 Ga 1-x5 As quantum well layer, GaAs barrier layer II, GaAs x6 P 1-x6 Quantum well layer, Al y1 Ga 1-y1 As upper base, Al y2 Ga 1-y2 As upper waveguide layer, Al y3 Ga 1-y3As P confinement layer and GaAs ohmic contact layer, wherein 0.2≤x1≤0.5, 0.2≤x2≤0.3, 0.1≤x3≤0.4, 0.7≤x4≤0.9, 0.1≤x5≤0.3, 0.7≤x6≤0.9, 0.1≤y1≤0.4, 0.2≤y2≤0.3, 0.2≤y2≤0.3;

[0055] In x5 Ga 1-x5 The thickness of the As quantum well layer is 5-10 nm, GaAs x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The thickness of the quantum well layers is 5-10 nm.

[0056] In x5 Ga 1-x5 The emission wavelength of the As quantum well layer is 915 nm. (GaAs) x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The emission wavelength of the quantum well layer is 830 nm.

[0057] Example 2

[0058] A method for fabricating a strain-compensated quantum well structure GaAs high-power laser epitaxial wafer includes the following steps:

[0059] (1) Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 740°C and bake for 30 minutes, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen on the substrate surface, in preparation for step (2).

[0060] (2) When the reaction chamber temperature drops to 710℃, TMGa and AsH3 are introduced to grow a GaAs buffer layer with a thickness of 300nm on the GaAs substrate, with a doping concentration of 2E18 atoms / cm. 3 The doping source is Si2H6;

[0061] (3) When the reaction chamber temperature drops to 650℃, TMAl, TMGa and AsH3 are introduced to grow Al on the GaAs buffer layer. x1 Ga 1-x1 An As N confinement layer with a thickness of 2.5 μm, x1 = 0.3, and a doping concentration of 1E18 atoms / cm². 3 The doping source is Si2H6.

[0062] (4) Maintain the temperature at 650℃. After step (3) is completed, introduce TMAl, TMGa and AsH3 to grow Al.x2 Ga 1-x2 The As waveguide layer has a thickness of 0.9 μm, x² = 0.25, and a doping concentration of 5E¹⁷ atoms / cm². 3 The doping source is Si2H6;

[0063] (5) Maintain the temperature at 650℃. After step (4) is completed, introduce TMAl, TMGa and AsH3 to grow Al. x3 Ga 1-x3 The As lower barrier layer has a thickness of 150 nm, and x3 = 0.15.

[0064] (6) Keep the temperature at 550℃. After step (5) is completed, continue to grow GaAs with a thickness of 7nm. x4 P 1-x4 For the quantum well layer, the preferred value for x4 is 0.8;

[0065] (7) Keep the temperature at 550℃. After step (6) is completed, introduce TMGa and AsH3 to grow GaAs barrier layer one with a growth thickness of 30nm.

[0066] (8) Maintain the temperature at 550℃. After step (7) is completed, introduce TMI, TMGa and AsH3 to grow In. x5 Ga 1-x5 As quantum well layer, thickness 7nm, x5=0.15;

[0067] (9) Keep the temperature at 550℃. After step (8) is completed, introduce TMGa and AsH3 to grow GaAs barrier layer II with a thickness of 30nm.

[0068] (10) Keep the temperature at 550℃. After step (9) is completed, continue to grow GaAs with a thickness of 7nm. x6 P 1-x6 In the quantum well layer, x6 is 0.8.

[0069] (11) Maintain the temperature at 650℃. After step (10) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y1 Ga 1-y1 As top barrier layer, thickness is 150nm, x3=0.15;

[0070] (12) Maintain the temperature at 650℃. After step (11) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y2 Ga 1-y2 An As waveguide layer with a thickness of 0.4 μm, y² = 0.25, and a doping concentration of 5E¹⁷ atoms / cm². 3 The doping source is CBr4;

[0071] (13) After maintaining the temperature at 650℃ and completing step (12), introduce TMAl, TMGa and AsH3 to grow Al. y3 Ga 1-y3 An AsP confinement layer with a thickness of 0.5 μm, y3 = 0.8, and a doping concentration of 1E18 atoms / cm². 3 The doping source is CBr4;

[0072] (14) When the temperature in the reaction chamber drops to 550°C, TMGa and AsH3 are introduced into Al. y3 Ga 1-y3 A GaAs ohmic contact layer with a thickness of 500 nm was grown on an As P confinement layer, with a doping concentration of 3E19 atoms / cm². 3 The doping source is CBr4.

[0073] Example 3

[0074] A method for fabricating a strain-compensated quantum well structure GaAs high-power laser epitaxial wafer, GaAs x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The thickness of the quantum well layer was 5 nm, and the other parameters remained the same as in Example 2.

[0075] Example 4

[0076] A method for fabricating a strain-compensated quantum well structure GaAs high-power laser epitaxial wafer, GaAs x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The thickness of the quantum well layer was 10 nm, and the other parameters remained the same as in Example 2.

[0077] Comparative Example 1

[0078] A method for fabricating a strain-compensated quantum well structure GaAs high-power laser epitaxial wafer, based on Example 2, involves removing GaAs... x4 P 1-x4 Quantum well layer, GaAs barrier layer one, GaAs barrier layer two and GaAs x6 P 1-x6 The quantum well layer, with the remaining parameters being the same as in Example 2.

[0079] The chips from Examples 2-5 were packaged onto COS heat sinks, and the samples were tested under a continuous operating current of 20A at room temperature. For each sample, 10 COS chips were selected and subjected to continuous aging tests at 30A to monitor the number of failures, as shown in Table 1 below:

[0080] Table 1: Results of Continuous Aging Test

[0081]

[0082] As can be seen from Table 1, Embodiment 2 of the present invention has the best performance. By comparing with Comparative Example 1, the GaAsP strain-compensated quantum well structure of the present invention can improve output power, reduce threshold current, and improve reliability.

[0083] By comparing the present invention with Examples 3 and 4, it can be seen that GaAs x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The thickness of the quantum well layer affects the parameters, with the optimal thickness being 7 nm.

[0084] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure, characterized in that, The GaAs substrate consists of, from bottom to top, a GaAs buffer layer and an Al layer. x1 Ga 1-x1 As N confinement layer, Al x2 Ga 1-x2 As lower waveguide layer, Al x3 Ga 1-x3 As under-barrier layer, GaAs x4 P 1-x4 Quantum well layer, GaAs barrier layer 1, In x5 Ga 1-x5 As quantum well layer, GaAs barrier layer II, GaAs x6 P 1-x6 Quantum well layer, Al y1 Ga 1-y1 As upper base, Al y2 Ga 1-y2 As upper waveguide layer, Al y3 Ga 1-y3 As P confinement layer and GaAs ohmic contact layer, wherein 0.2≤x1≤0.5, 0.2≤x2≤0.3, 0.1≤x3≤0.4, 0.7≤x4≤0.9, 0.1≤x5≤0.3, 0.7≤x6≤0.9, 0.1≤y1≤0.4, 0.2≤y2≤0.3, 0.2≤y2≤0.3; In x5 Ga 1-x5 The thickness of the As quantum well layer is 5-10 nm, GaAs x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The thickness of the quantum well layers is 5-10 nm.

2. The GaAs high-power laser epitaxial wafer with strain-compensated quantum well structure according to claim 1, characterized in that, In x5 Ga 1-x5 The emission wavelength of the As quantum well layer is 915 nm. (GaAs) x4 P 1-x4 Quantum well layers and GaAs x6 P 1-x6 The emission wavelength of the quantum well layer is 830 nm.

3. A method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure as described in claim 2, characterized in that, Includes the following steps: (1) Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 730-750℃ and bake for 20-40 minutes, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen on the substrate surface, in preparation for step (2). (2) When the temperature of the reaction chamber drops to 700-720℃, TMGa and AsH3 are introduced to grow a GaAs buffer layer with a thickness of 100-300nm on the GaAs substrate. (3) When the temperature of the reaction chamber drops to 640-680℃, TMAl, TMGa and AsH3 are introduced to grow Al on the GaAs buffer layer. x1 Ga 1-x1 As N confinement layer, with a thickness of 2-3 μm; (4) Maintain the temperature at 640-680℃. After step (3) is completed, introduce TMAl, TMGa and AsH3 to grow Al. x2 Ga 1-x2 The As waveguide layer has a thickness of 0.8-1.5 μm; (5) Maintain the temperature at 640-680℃. After step (4) is completed, introduce TMAl, TMGa and AsH3 to grow Al. x3 Ga 1-x3 As lower barrier layer, with a thickness of 100-300 nm; (6) Keep the temperature at 540-580℃. After step (5) is completed, continue to grow GaAs with a thickness of 5-10 nm. x4 P 1-x4 Quantum well layer; (7) Keep the temperature at 540-580℃. After step (6) is completed, introduce TMGa and AsH3 to grow GaAs barrier layer one with a growth thickness of 20-50nm. (8) Maintain the temperature at 540-580℃. After step (7) is completed, introduce TMI, TMGa and AsH3 to grow In. x5 Ga 1-x5 As quantum well layer, with a thickness of 5-10 nm; (9) Keep the temperature at 540-580℃. After step (8) is completed, introduce TMGa and AsH3 to grow GaAs barrier layer II with a thickness of 20-50nm. (10) Keep the temperature at 540-580℃. After step (9) is completed, continue to grow GaAs with a thickness of 5-10 nm. x6 P 1-x6 Quantum well layer; (11) Maintain the temperature at 640-680℃. After step (10) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y1 Ga 1-y1 As top barrier layer, with a thickness of 100-300nm; (12) Maintain the temperature at 640-680℃. After step (11) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y2 Ga 1-y2 As waveguide layer with a thickness of 0.2-0.6 μm; (13) Maintain the temperature at 640-680℃. After step (12) is completed, introduce TMAl, TMGa and AsH3 to grow Al. y3 Ga 1-y3 The AsP confinement layer has a thickness of 0.4-0.8 μm; (14) When the temperature in the reaction chamber drops to 540-560℃, TMGa and AsH3 are introduced into Al y3 Ga 1-y3 GaAs ohmic contact layers with a thickness of 300-600 nm are grown on As P confinement layers.

4. The method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure according to claim 3, characterized in that, The high-temperature heat treatment in step (1) is at 740℃ and the baking time is 30 minutes; The reaction chamber temperature in step (2) is 710℃, the growth thickness is 300nm, and the doping concentration is 1E18-3E18 atoms / cm. 3 The doping source is Si2H6; The reaction chamber temperature in step (3) is 650℃, the growth thickness is 2.5μm, 0.2≤x1≤0.5, and the doping concentration is 5E17-2E18 atoms / cm². 3 .

5. The method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure according to claim 4, characterized in that, The reaction chamber temperature in step (4) is 650℃, the growth thickness is 0.9μm, 0.2≤x2≤0.3, and the doping concentration is 5E17-2E18 atoms / cm². 3 ; The reaction chamber temperature in step (5) is 650℃, the growth thickness is 150nm, and 0.1≤x3≤0.

4.

6. The method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure according to claim 5, characterized in that, The reaction chamber temperature in step (6) is 550℃, and the growth thickness is 7nm for GaAs. x4 P 1-x4 In the quantum well, x4 takes values ​​ranging from 0.7 to 0.9; The reaction chamber temperature in step (7) is 550℃ and the growth thickness is 30nm.

7. The method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure according to claim 6, characterized in that, The reaction chamber temperature in step (8) is 550℃, the growth thickness is 7nm, and 0.1≤x5≤0.3; The reaction chamber temperature in step (9) is 550℃ and the growth thickness is 30nm.

8. The method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure according to claim 7, characterized in that, The reaction chamber temperature in step (10) is 550℃, and the growth thickness is 7nm. GaAs x6 P 1-x6 In the quantum well, x6 takes values ​​of 0.7-0.

9.

9. The method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure according to claim 8, characterized in that, The reaction chamber temperature in step (11) is 650℃, the growth thickness is 150nm, and 0.1≤x3≤0.4; The reaction chamber temperature in step (12) is 650℃, the growth thickness is 0.4μm, 0.2≤y2≤0.3, and the doping concentration is 1E17-9E17 atoms / cm². 3 .

10. The method for fabricating a GaAs high-power laser epitaxial wafer with a strain-compensated quantum well structure according to claim 9, characterized in that, The reaction chamber temperature in step (13) is 650℃, the growth thickness is 0.5μm, 0.6≤y3≤0.9, and the doping concentration is 9E17-5E18 atoms / cm². 3 ; The reaction chamber temperature in step (14) is 550℃, the growth thickness is 500nm, and the doping concentration is 9E18-5E19 atoms / cm. 3 .

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