Display panel, preparation method and device thereof, antistatic film and application thereof

Abstract

The present application relates to the field of display technology, in particular to a display panel and its preparation method, device, antistatic film and its application. It is to solve the problem that the antistatic layer in the related art cannot meet the long-term reliability test requirements, so that the liquid crystal display panel using the antistatic layer is prone to touch failure and static discharge during use. A display panel includes: a liquid crystal display panel and an antistatic layer, the liquid crystal display panel includes an opposing array substrate and an opposing substrate, and a touch sensing layer arranged on the side of the opposing substrate facing the array substrate; the antistatic layer is arranged on the side of the opposing substrate away from the array substrate; the antistatic layer includes: a first material layer and a second material layer stacked in sequence in a direction gradually away from the opposing substrate; the material of the first material layer includes: at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, and the material of the second material layer includes: silicon carbide and aluminum carbide.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel, a preparation method and device thereof, an antistatic film and applications thereof. Background Art

[0002] With the continuous advancement of thin-film transistor liquid crystal display (TFT-LCD) technology, the demand for thinner and lighter LCDs has become increasingly urgent. This has led to the development of in-cell touch technology, which aims to achieve the integration of display and touch. In-cell technology integrates touch functionality into the TFT-LCD display panel. This process involves forming an antistatic layer on the opposing substrate of the LCD panel. This saves a glass substrate and eliminates the lamination process, thus reducing costs, thickness, and weight of the LCD panel, achieving a thinner and lighter display.

[0003] However, in related art, when the sheet resistance of the antistatic layer is too high, it hinders the conduction of static charges and thus the discharge of static electricity. When the sheet resistance of the antistatic layer is too low, it affects touch performance. Especially when used in harsh environments, the reliability testing time of the above-mentioned LCD panels increases exponentially. Due to issues such as material selection, the antistatic layers in related art cannot meet the requirements of long-term reliability testing. During assembly and use, problems such as touch failure and static discharge failure are prone to occur, which is not conducive to the application of LCD panels in harsh environments. Summary of the Invention

[0004] Based on this, the present application provides a display panel and its preparation method, device, antistatic film and application, which are used to solve the problem that the antistatic layer in the related technology cannot meet the long-term reliability testing requirements, thereby making the liquid crystal display panel using the antistatic layer prone to touch failure and static discharge during use.

[0005] In a first aspect, a display panel is provided, comprising:

[0006] A liquid crystal display panel, comprising an array substrate and an opposing substrate, and a touch sensing layer disposed on a side of the opposing substrate facing the array substrate;

[0007] an antistatic layer, disposed on a side of the counter substrate facing away from the array substrate;

[0008] The antistatic layer includes: a first material layer and a second material layer sequentially stacked in a direction gradually away from the opposite substrate;

[0009] The material of the first material layer includes at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, and the material of the second material layer includes silicon carbide and aluminum carbide.

[0010] Optionally, the mass ratio of silicon carbide to aluminum carbide is 90:10 to 95:5.

[0011] Optionally, the molecular formula of silicon carbide is SiC, and the molecular formula of aluminum carbide is Al3C4.

[0012] Optionally, in the aluminum-doped zinc oxide, the doping amount of aluminum is 4 wt% to 10 wt%, and in the antimony-doped tin oxide, the doping amount of antimony is 18 wt% to 22 wt%.

[0013] Optionally, the thickness of the first material layer is 10-16 nm, and the thickness of the second material layer is 2-3 nm.

[0014] Optionally, the sheet resistance of the antistatic layer is 5E7 to 1E9Ω.

[0015] In a second aspect, a method for preparing a display panel is provided, comprising:

[0016] A liquid crystal display panel is provided, the liquid crystal display panel comprising an array substrate and an opposing substrate, and a touch sensing layer formed on a side of the opposing substrate facing the array substrate;

[0017] forming a first material layer on a side of the counter substrate facing away from the array substrate by a first sputtering process, wherein the material of the first material layer comprises at least one of aluminum-doped zinc oxide and antimony-doped tin oxide;

[0018] By a second sputtering process, a second material layer is formed on the surface of the first material layer away from the array substrate. The materials of the second material layer include silicon carbide and aluminum carbide. An antistatic layer is prepared. The antistatic layer includes the first material layer and the second material layer.

[0019] Optionally, the target material used in the first sputtering process includes: at least one of aluminum-doped zinc oxide and antimony-doped tin oxide;

[0020] The vacuum degree of the first sputtering process is 0.15-0.25 Pa. The reaction gas used in the first sputtering process is oxygen with a flow rate of 6-20 sccm. The flow rate of the inert gas used in the first sputtering process is 100-200 sccm.

[0021] Optionally, the first sputtering process adopts DC sputtering, and the power of DC sputtering is 2.4 to 3.2 KW.

[0022] Optionally, the coating temperature of the first sputtering process is 70-90° C., and the coating speed is 0.8-1.2 m / min.

[0023] Optionally, the target material used in the second sputtering process includes: silicon and aluminum, wherein the mass ratio of silicon to aluminum is 90:10 to 95:5;

[0024] The vacuum degree of the second sputtering process is 0.1-0.15 Pa. The reaction gas used in the second sputtering process is acetylene with a flow rate of 10-20 sccm. The flow rate of the inert gas used in the second sputtering process is 80-120 sccm.

[0025] Optionally, the second sputtering process adopts radio frequency sputtering, the power of the radio frequency sputtering is 1.0 to 1.2 kW, and the duty cycle of the radio frequency sputtering is 40 to 60%.

[0026] Optionally, the coating temperature of the second sputtering process is 100-120° C., and the coating speed is 0.8-1.2 m / min.

[0027] According to a third aspect, a display device is provided, comprising:

[0028] The display panel as described in the first aspect.

[0029] In a fourth aspect, an antistatic film is provided, comprising:

[0030] basal layer;

[0031] The antistatic layer is provided on the base layer, and comprises: a square resistance layer and a protective layer stacked in sequence in a direction gradually away from the base layer;

[0032] The material of the square resistance layer includes at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, and the material of the protective layer includes silicon carbide and aluminum carbide.

[0033] In a fifth aspect, a use of the antistatic film as described above in the preparation of a touch sensor is provided.

[0034] Compared with the prior art, this application has the following beneficial effects:

[0035] Because the first material layer comprises at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, the sheet resistance of the first material layer can be maintained within a suitable range, such as 5E7 to 1E9Ω, by carefully selecting parameters such as the thickness and oxygen reaction rate of the first material layer. This prevents excessively low sheet resistance from affecting touch performance and excessively high sheet resistance from hindering electrostatic discharge. Furthermore, the oxide thin film of the first material layer exhibits high light transmittance, ensuring excellent light transmittance for the antistatic layer. Furthermore, the second material layer, comprised of silicon carbide and aluminum carbide, exhibits excellent density and protects the first material layer, effectively blocking water and oxygen. This improves the sheet resistance stability of the first material layer and reduces the likelihood of touch failure and electrostatic discharge failure during use, thus meeting the application requirements of the antistatic layer in harsh environments. Furthermore, the second material layer is made of a semiconductor material with excellent electron transport properties. Therefore, when the second material layer is thin, it does not affect the conductive properties of the first material layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 A schematic cross-sectional view of a display panel provided in some embodiments of the present application;

[0037] Figure 2 A schematic flow chart of a method for manufacturing a display panel provided in some embodiments of the present application;

[0038] Figure 3 Schematic diagram of the cross-sectional structure of the antistatic film provided in some embodiments of the present application. DETAILED DESCRIPTION

[0039] The present application will be further described in detail below with reference to specific embodiments. The present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the present disclosure.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0041] Based on the above technical problems, some embodiments of the present application provide a display panel 10, such as Figure 1As shown, it includes: a liquid crystal display panel 1 and an antistatic layer 2, wherein the liquid crystal display panel 1 includes: an opposing array substrate 11 and an opposing substrate 12, a liquid crystal layer 13 sandwiched between the array substrate 11 and the opposing substrate 12, and a touch sensing layer 14 arranged on the side of the opposing substrate 12 facing the array substrate 11; the antistatic layer 2 is arranged on the side of the opposing substrate 12 facing away from the array substrate 11.

[0042] The antistatic layer 2 includes: a first material layer 21 and a second material layer 22 stacked in sequence in a direction gradually away from the opposing substrate 12; the material of the first material layer 21 includes: at least one of aluminum-doped zinc oxide (AZO) and antimony-doped tin oxide (ATO), and the material of the second material layer 22 includes: silicon carbide and aluminum carbide.

[0043] AZO, a semiconductor optoelectronic material, not only offers high conductivity and high transmittance in the visible light range, but is also abundant and inexpensive, making it a leading alternative to ITO thin films. ATO is a new type of light-colored, transparent conductive powder. It utilizes oxygen vacancies or electrons formed when antimony doping replaces tin in a defective solid melt as charge carriers. Its conductivity is unaffected by ambient humidity, thus avoiding the environmental dependence of organic antistatic agents.

[0044] Silicon carbide has properties such as high temperature resistance, high strength, good thermal conductivity, and impact resistance. Its hardness is second only to diamond and it has strong wear resistance. Aluminum carbide is a type of aluminum carbide that has excellent high-temperature mechanical properties and chemical corrosion resistance similar to ceramics.

[0045] For conductive films, when resistivity remains constant, sheet resistance is the best measure of their thickness. Sheet resistance, or sheet resistance, refers to the edge-to-edge resistance of a square of conductive film. Sheet resistance has a unique characteristic: the edge-to-edge resistance of a square of any size is the same, whether the side length is 1 meter or 0.1 meter. This means that sheet resistance is dependent solely on factors such as the thickness of the conductive film and is independent of its area.

[0046] In the display panel provided in the embodiment of the present application, since the material of the first material layer 21 includes at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, the sheet resistance of the first material layer 21 can be maintained within an appropriate range, such as 5E7 to 1E9Ω, by selecting the thickness of the first material layer 21. This can prevent excessively low sheet resistance from affecting touch performance and excessively high sheet resistance from being detrimental to electrostatic discharge. Furthermore, the first material layer 21 has a high light transmittance, which can ensure good light transmittance for the antistatic layer 2. Furthermore, by providing the second material layer 22, since the material of the second material layer 22 includes silicon carbide and aluminum carbide, the second material layer 22 has good density and can protect the first material layer 21. For example, it can effectively block water and oxygen, thereby improving the sheet resistance stability of the first material layer 21 and reducing the probability of touch failure and electrostatic discharge failure during use of the first material layer 21. This can meet the application requirements of the antistatic layer 2 in harsh environments. In addition, the second material layer 22 is made of a semiconductor material having good electron transport properties. Therefore, when the second material layer 22 is thin, it will not affect the conductive properties of the first material layer 21 .

[0047] In some embodiments, the sheet resistance of the antistatic layer 2 is 5E7-1E9Ω.

[0048] In some embodiments, the mass ratio of the silicon carbide and aluminum carbide is 90:10 to 95:5. The matching mass ratio can achieve sputtering film stability and relatively good performance indicators such as transmittance and square resistance of the film layer.

[0049] In some embodiments, the molecular formula of the silicon carbide is SiC, and the molecular formula of the aluminum carbide is Al3O4. This structure has the advantages of stable chemical properties, stable electron transport, and anti-oxidation.

[0050] In some embodiments, the aluminum doping amount in aluminum-doped zinc oxide is 4 wt% to 10 wt%, and the antimony doping amount in antimony-doped tin oxide is 18 wt% to 22 wt%. These doping ratios can produce a film layer with relatively stable sheet resistance and high transparency, thermal stability, and chemical stability.

[0051] In some embodiments, the thickness of the first material layer 21 is 10-16 nm, and the thickness of the second material layer 22 is 2-3 nm.

[0052] In these embodiments, by controlling the thickness of the first material layer 21 and the second material layer 22 within the aforementioned ranges, the sheet resistance of the first material layer 21 can be maintained within a relatively suitable range, thereby maintaining good touch performance of the display panel while also ensuring good antistatic performance. Furthermore, the thickness of the second material layer 22 ensures good barrier properties while maintaining good electron transport performance, without affecting the conductive properties of the first material layer 21.

[0053] Some embodiments of the present application provide a display device, including: the display panel as described above.

[0054] An example of a display device is an in-vehicle display device. Due to the harsh in-vehicle environment, reliability testing of the display panel for an in-vehicle display device can be doubled. For example, while the test duration for a traditional display panel is 240 hours, the test duration for an in-vehicle display device can be 1000 hours or even longer.

[0055] Since the antistatic layer 2 used in the vehicle display device provided in the embodiment of the present application includes a first material layer 21 and a second material layer 22, through reliability testing of the above-mentioned antistatic layer under the conditions of 85°C and 85% humidity, it was found that: the antistatic layer 2 can meet the long-term (1000h) reliability testing requirements and has good water and oxygen barrier properties, which solves the problem that the antistatic layer 2 in the related technology cannot meet the long-term reliability testing requirements under high temperature and high humidity conditions, and the antistatic layer 2 is prone to touch failure and electrostatic release failure during use, thereby causing the antistatic layer 2 to have poor square resistance stability.

[0056] Some embodiments of the present application provide a method for preparing a display panel, such as Figure 2 As shown, including:

[0057] S1) providing a liquid crystal display panel 1, the liquid crystal display panel 1 comprising an array substrate 11 and an opposing substrate 12, and a touch sensing layer 14 formed on a side of the opposing substrate 12 facing the array substrate 11;

[0058] S2), forming a first material layer 21 on the side of the counter substrate 12 facing away from the array substrate 11 by a first sputtering process, wherein the material of the first material layer 21 includes at least one of aluminum-doped zinc oxide and antimony-doped tin oxide;

[0059] S3) By a second sputtering process, a second material layer 22 is formed on the surface of the first material layer 21 away from the array substrate 11. The materials of the second material layer 22 include: silicon carbide and aluminum carbide, and an antistatic layer 2 is prepared. The antistatic layer 2 includes the first material layer 21 and the second material layer 22.

[0060] In some embodiments, the target material used in the first sputtering process includes: at least one of aluminum-doped zinc oxide and antimony-doped tin oxide;

[0061] The vacuum degree of the first sputtering process is 0.15-0.25 Pa. The reaction gas used in the first sputtering process is oxygen with a flow rate of 6-20 sccm. The flow rate of the inert gas used in the first sputtering process is 100-200 sccm.

[0062] In these embodiments, an inert gas is used as a working gas to generate plasma, and the plasma sputters the target material to form a film on the opposing substrate 12. For example, the inert gas can be argon, and oxygen is the film layer reaction gas. By adjusting the flow rate of oxygen, the degree of chemical reaction between oxygen and the target material can be adjusted, thereby adjusting the height of the resistance.

[0063] In some embodiments, the first sputtering process uses DC sputtering, and the power of DC sputtering is 2.4 to 3.2 KW.

[0064] In these embodiments, high-speed and low-temperature sputtering coating can be achieved by adopting DC sputtering. By controlling the power of DC sputtering to 2.4 to 3.2 kW, the coating speed can be adjusted to facilitate maintaining the coating quality while reaching the predetermined film thickness more quickly.

[0065] In some embodiments, the coating temperature of the first sputtering process is 70-90° C., and the coating speed is 0.8-1.2 m / min.

[0066] In these embodiments, by controlling the coating temperature and speed within the above-mentioned range, coating can be performed at a lower temperature, and damage to high-temperature-sensitive materials in the liquid crystal display panel can be reduced while ensuring that the coating has a certain density. At the same time, the coating speed can be ensured, and rapid coating can be achieved in a shorter time, thereby improving the coating efficiency.

[0067] In some embodiments, the target material used in the second sputtering process includes: silicon and aluminum, wherein the mass ratio of silicon to aluminum is 90:10 to 95:5;

[0068] The vacuum degree of the second sputtering process is 0.1-0.15 Pa. The reaction gas used in the second sputtering process is acetylene with a flow rate of 10-20 sccm. The flow rate of the inert gas used in the second sputtering process is 80-120 sccm.

[0069] In these embodiments, an inert gas can be used as a working gas to generate a plasma, which sputters the target material, thereby coating the array substrate. For example, the inert gas can be argon. Acetylene is used as a film layer reaction gas. By adjusting the acetylene flow rate, the degree of chemical reaction between acetylene and silicon and / or aluminum can be adjusted, thereby adjusting the molecular formula of silicon carbide and / or aluminum carbide.

[0070] In some embodiments, the second sputtering process uses radio frequency sputtering, the power of the radio frequency sputtering is 1.0 to 1.2 kW, and the duty cycle of the radio frequency sputtering is 40 to 60%.

[0071] In these embodiments, by adopting RF sputtering, films can be formed at a low sputtering frequency, and the thickness of the film can be controlled more accurately. By controlling the power of RF sputtering to 1 to 1.2 kW and the duty cycle to 40 to 60%, the film can be controlled to reach the corresponding thickness in a shorter time and maintain a high density of the film.

[0072] In some embodiments, the coating temperature of the second sputtering process is 100-120° C., and the coating speed is 0.8-1.2 m / min.

[0073] In these embodiments, by controlling the coating temperature to 100-120°C and the coating speed to 0.8-1.2 m / min, the density and degree of chemical reaction of the second material layer can be adjusted, thereby obtaining a second material layer with a higher density, thereby improving the water and oxygen barrier capacity of the second material layer.

[0074] Some embodiments of the present application provide an antistatic film, such as Figure 3 As shown, it includes: a base layer 100 and an antistatic layer 2, the antistatic layer 2 is arranged on the base layer 100, and the antistatic layer 2 includes: a square resistive layer 201 and a protective layer 202 stacked in sequence in a direction gradually away from the base layer 100; wherein, the material of the square resistive layer 201 includes: at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, and the material of the protective layer 202 includes: silicon carbide and aluminum carbide.

[0075] The base layer 100 may be a rigid film (such as glass) or a flexible film (such as PI, etc.).

[0076] Sheet resistance, or sheet resistance, refers to the edge-to-edge resistance of a square thin-film conductive material. Sheet resistance has a unique property: the edge-to-edge resistance of any square is the same, regardless of its size. Whether the side length is 1 meter or 0.1 meter, the sheet resistance remains the same. This means that the sheet resistance is solely dependent on factors like the thickness of the conductive film, and is independent of its surface area.

[0077] The above-mentioned sheet resistance layer 201 refers to a conductive film having the above-mentioned sheet resistance characteristics. By selecting the material and thickness of the conductive film, a sheet resistance layer 201 having a certain sheet resistance can be prepared.

[0078] In the antistatic film provided in the embodiment of the present application, since the material of the square resistive layer 201 includes at least one of AZO and ATO, the sheet resistance of the square resistive layer 201 can be maintained within a suitable range, such as 5E7 to 1E9Ω, by selecting the thickness of the square resistive layer when other film forming conditions are fixed. This can prevent excessively low sheet resistance from affecting touch performance and excessively high sheet resistance from hindering electrostatic discharge. Furthermore, the high transmittance of the square resistive layer 201 can ensure good light transmittance for the antistatic film. Furthermore, by providing the protective layer 202, which includes a mixture of silicon carbide and aluminum carbide, the protective layer 202 has good density and can protect the square resistive layer 201. For example, it can effectively block water and oxygen, thereby improving the sheet resistance stability of the square resistive layer 201 and reducing the probability of touch failure and electrostatic discharge failure during use of the square resistive layer 201, thereby meeting the application requirements of the antistatic film in harsh environments. In addition, the material of the protective layer 202 is a semiconductor material, which has good electron transmission performance. Therefore, when the thickness of the protective layer 202 is relatively thin, it will not affect the conductive performance of the barrier layer 201.

[0079] In some embodiments, the antistatic film may further include a touch sensing layer disposed on a side of the base layer 100 away from the antistatic layer.

[0080] In these embodiments, the antistatic film can be used in a display panel.

[0081] In the subsequent preparation process, since the antistatic layer includes a square resist layer and a protective layer, when the antistatic film is cleaned and baked, the water and oxygen barrier properties of the protective layer can block water and oxygen from the square resist layer, thereby reducing problems such as touch failure and electrostatic release failure caused by changes in the square resist layer.

[0082] Some embodiments of the present application provide a use of the antistatic film as described above in the preparation of a touch sensor.

[0083] The touch sensor may include the antistatic film, FPC, etc.

[0084] The above describes the specific implementation methods of the present application. In order to objectively illustrate the technical effects produced by the present application, the following examples and comparative examples will be used for description.

[0085] In the following examples and comparative examples, all raw materials can be purchased commercially, and in order to maintain the reliability of the experiments, the raw materials used in the following examples and comparative examples have the same physical and chemical parameters or have undergone the same treatment.

[0086] Example 1

[0087] The preparation method of the antistatic film in Example 1 is as follows:

[0088] In step 1, a ceramic target made of aluminum-doped zinc oxide (4 wt% aluminum) was used as the sputtering target. Argon (100 sccm) and oxygen (6 sccm) were introduced into the first coating chamber, and the vacuum level was maintained at 0.15 Pa. A 2.4 kW DC power supply was turned on, the temperature in the first coating chamber was maintained at 80°C, and the coating speed was maintained at 0.8 m / min until the coating thickness reached 10 nm.

[0089] Step 2) Move the substrate with the prepared square resist layer into the second coating sputtering chamber, use silicon-aluminum ceramic material (silicon and aluminum mass ratio of 90:10) as the sputtering target, adjust the vacuum degree in the second coating chamber to 0.1 Pa, and introduce 80 sccm of argon and 10 sccm of acetylene into the second coating sputtering chamber. Turn on the RF power supply with a power of 1.0 kW and a duty cycle of 40%, and control the temperature in the second coating chamber to 100°C and the coating speed to 0.8 m / min until the coating thickness reaches 2 nm.

[0090] Example 2

[0091] The method for preparing the antistatic film in Example 2 is basically the same as the method for preparing the antistatic film in Example 1, except that in step 1) of Example 2, a ceramic target of aluminum-doped zinc oxide (aluminum doping amount is 10wt%) is used as the sputtering target, 200sccm of argon and 20sccm of oxygen are introduced into the first coating chamber, and the vacuum degree of the first coating chamber is controlled to 0.25Pa. The DC power supply is turned on, the power of the DC power supply is 3.2KW, the temperature in the first coating chamber is controlled to 70°C, the coating speed is 1.2m / min, and the coating thickness is 16nm. In step 2), a silicon-aluminum ceramic material (mass ratio of silicon to aluminum is 95:5) is used as the sputtering target, the vacuum degree in the second coating chamber is adjusted to 0.15Pa, and 120sccm of argon and 20sccm of acetylene are introduced into the second coating chamber. The RF power supply was turned on with a power of 1.2 kW and a duty cycle of 60%. The temperature in the second coating chamber was controlled to be 120° C., the coating speed was 1.2 m / min, and the coating thickness was 3 nm.

[0092] Example 3

[0093] The preparation method of the antistatic film in Example 3 is basically the same as the preparation method of the antistatic film in Example 1, except that in step 1) of Example 3, a ceramic target of aluminum-doped zinc oxide (the aluminum doping amount is 8wt%) is used as a sputtering target, 150sccm of argon and 13sccm of oxygen are introduced into the first coating chamber, and the vacuum degree of the first coating chamber is controlled to be 0.20Pa. The DC power supply is turned on, the power of the DC power supply is 2.8KW, the temperature in the first coating chamber is controlled to be 90°C, the coating speed is 1.0m / min, and the coating thickness is 13nm. In step 2), a silicon-aluminum ceramic material (the mass ratio of silicon to aluminum is 92:8) is used as a sputtering target, the vacuum degree in the second coating chamber is adjusted to 0.12Pa, and 100sccm of argon and 15sccm of acetylene are introduced into the second coating chamber. The RF power supply was turned on with a power of 1.1 kW and a duty cycle of 50%. The temperature in the second coating chamber was controlled to be 110° C., the coating speed was 1.0 m / min, and the coating thickness was 2.5 nm.

[0094] Example 4

[0095] The preparation method of the antistatic film in Example 4 is basically the same as the preparation method of the antistatic film in Example 1, except that in step 1) in Example 4, a ceramic target of antimony-doped tin oxide (the antimony doping amount is 18 wt%) is used as the sputtering target.

[0096] Example 5

[0097] The preparation method of the antistatic film in Example 5 is basically the same as the preparation method of the antistatic film in Example 1, except that in step 1) in Example 5, a ceramic target of antimony-doped tin oxide (the antimony doping amount is 22 wt%) is used as the sputtering target.

[0098] Example 6

[0099] The preparation method of the antistatic film in Example 6 is basically the same as the preparation method of the antistatic film in Example 1, except that in step 1) in Example 6, a ceramic target of antimony-doped tin oxide (the antimony doping amount is 20 wt%) is used as the sputtering target.

[0100] Comparative Example 1

[0101] The antistatic film in Comparative Example 1 only includes a square resist layer, and the preparation method and thickness of the square resist layer are the same as those in Example 1.

[0102] Test Case

[0103] The antistatic films prepared in Examples 1 to 6 and Comparative Example 1 were subjected to reliability tests at 85° C. and 85% humidity for 240 h and 1000 h, and the sheet resistance, transmittance, and electrostatic release performance of the antistatic layer were tested. The test results are shown in Table 1 below:

[0104] Table 1

[0105]

[0106] As can be seen from Table 1, the antistatic film provided in Example 1 has a very small change in square resistance when subjected to a reliability test at 85°C and 85% humidity, while the antistatic film provided in Comparative Example 1 has a large change in square resistance when subjected to a reliability test at 85°C and 85% humidity. In addition, the longer the test time, the greater the change in square resistance. This shows that the provision of a protective layer can effectively improve square resistance stability.

[0107] In addition, according to the test data of Examples 1 and 2, it can be seen that by controlling the thickness of the protective layer within the range of 2 to 3 nm, the resistive layer can be protected to the greatest extent, improving the resistive stability without affecting the electrostatic dissipation capability and touch performance of the antistatic film.

[0108] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0109] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A display panel, characterized in that: include: A liquid crystal display panel, comprising an array substrate and an opposing substrate, and a touch sensing layer provided on a side of the opposing substrate facing the array substrate; an antistatic layer, disposed on a side of the counter substrate facing away from the array substrate; The antistatic layer comprises: a first material layer and a second material layer sequentially stacked in a direction gradually away from the opposing substrate; The material of the first material layer includes: at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, and the material of the second material layer includes: silicon carbide and aluminum carbide; The mass ratio of the silicon carbide to the aluminum carbide is 90:10 to 95:

5.

2. The display panel according to claim 1, wherein: The molecular formula of the silicon carbide is SiC, and the molecular formula of the aluminum carbide is Al3C4.

3. The display panel according to claim 1, wherein: In the aluminum-doped zinc oxide, the doping amount of aluminum is 4wt% to 10wt%, and in the antimony-doped tin oxide, the doping amount of antimony is 18wt% to 22wt%.

4. The display panel according to claim 1, wherein: The thickness of the first material layer is 10-16 nm, and the thickness of the second material layer is 2-3 nm.

5. The display panel according to claim 1, wherein: The sheet resistance of the antistatic layer is 5E7-1E9Ω.

6. A method for preparing a display panel, characterized in that: include: A liquid crystal display panel is provided, comprising an array substrate and an opposing substrate, and a touch sensing layer formed on a side of the opposing substrate facing the array substrate; forming a first material layer on a side of the counter substrate facing away from the array substrate by a first sputtering process, wherein the material of the first material layer comprises at least one of aluminum-doped zinc oxide and antimony-doped tin oxide; forming a second material layer on a surface of the first material layer away from the array substrate by a second sputtering process, wherein the materials of the second material layer include silicon carbide and aluminum carbide, and preparing an antistatic layer, wherein the antistatic layer includes the first material layer and the second material layer; The target material used in the second sputtering process includes silicon and aluminum, wherein the mass ratio of the silicon to the aluminum is 90:10 to 95:

5.

7. The method according to claim 6, characterized in that The target material used in the first sputtering process includes: at least one of aluminum-doped zinc oxide and antimony-doped tin oxide; The vacuum degree of the first sputtering process is 0.15-0.25 Pa, the reaction gas used in the first sputtering process is oxygen, the flow rate of the oxygen is 6-20 sccm, and the flow rate of the inert gas used in the first sputtering process is 100-200 sccm.

8. The method according to claim 6, characterized in that The first sputtering process adopts direct current sputtering, and the power of the direct current sputtering is 2.4-3.2KW.

9. The method according to claim 6, characterized in that The coating temperature of the first sputtering process is 70-90° C., and the coating speed is 0.8-1.2 m / min.

10. The method according to claim 6, characterized in that The vacuum degree of the second sputtering process is 0.1-0.15 Pa, the reaction gas used in the second sputtering process is acetylene, the flow rate of the acetylene is 10-20 sccm, and the flow rate of the inert gas used in the second sputtering process is 80-120 sccm.

11. The method according to claim 6, characterized in that The second sputtering process adopts radio frequency sputtering, the power of the radio frequency sputtering is 1.0-1.2KW, and the duty cycle of the radio frequency sputtering is 40-60%.

12. The method according to claim 6, characterized in that The coating temperature of the second sputtering process is 100-120° C., and the coating speed is 0.8-1.2 m / min.

13. A display device, characterized in that: include: The display panel according to any one of claims 1 to 5.

14. An antistatic film, characterized in that: include: basal layer; an antistatic layer, disposed on the base layer, the antistatic layer comprising: a square resistance layer and a protective layer stacked in sequence in a direction gradually away from the base layer; The material of the square resistance layer includes: at least one of aluminum-doped zinc oxide and antimony-doped tin oxide, and the material of the protective layer includes: silicon carbide and aluminum carbide; The mass ratio of the silicon carbide to the aluminum carbide is 90:10 to 95:

5.

15. Use of the antistatic film according to claim 14 in preparing a touch sensor.

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