Gas supply arrangement, particle radiation apparatus and method of operating the same

Abstract

The invention relates to a gas supply device, a particle radiation apparatus, a method for operating a gas supply device, a method for operating a particle radiation apparatus, and a computer program product, the gas supply device having a first precursor reservoir for receiving a first precursor, a second precursor reservoir for receiving a second precursor, and a supply unit for supplying the first precursor in gaseous state and / or the second precursor in gaseous state onto a surface of an object. A first guiding device is arranged between the first precursor reservoir and the supply unit. A second guiding device is arranged between the second precursor reservoir and the supply unit. A first valve is arranged between the first guiding device and the supply unit. A second valve is arranged between the second guiding device and the supply unit. A control valve for supplying the first precursor in gaseous state and / or the second precursor in gaseous state is connected to the first valve, the second valve and the supply unit.

Description

Technical Field

[0001] This invention relates to a gas supply device and a particle radiation apparatus having a gas supply device. The particle radiation apparatus is designed, for example, as an electron radiation apparatus and / or an ion radiation apparatus. The invention also relates to a method for operating the gas supply device and / or the particle radiation apparatus. Background Technology

[0002] Electron radiation equipment, especially scanning electron microscopes (hereinafter also known as SEM) and / or transmission electron microscopes (hereinafter also known as TEM), are used to study objects (samples) to gain knowledge about their properties and behavior under specific conditions.

[0003] In the case of SEM, an electron beam (hereinafter referred to as the primary electron beam) is generated using a beam generator and focused onto the object under study using a beam guiding system. The primary electron beam is guided across the surface of the object in a scanning manner using a deflection device. The electrons of the primary electron beam interact with the object. As a result of this interaction, electrons are emitted from the object (so-called secondary electrons), and electrons from the primary electron beam are reflected back (so-called backscattered electrons). The secondary electrons and backscattered electrons are detected and used to generate an image. This yields an image of the object under study.

[0004] In the case of TEM, a primary electron beam is generated using a beam generator and focused onto the object under study using a beam guiding system. The primary electron beam penetrates the object. As the primary electron beam passes through the object, the electrons in the primary electron beam interact with the material of the object. The electrons that have penetrated the object are imaged on a screen or on a detector (e.g., a camera) by a system consisting of an objective lens and a transmission lens. This imaging can also be performed in the scanning mode of TEM. This type of TEM is generally referred to as STEM. Alternatively, it can be proposed to image the object by using a separate detector to detect the reflected electrons and / or secondary electrons emitted by the object.

[0005] Furthermore, it is known from the prior art to use combined devices for studying objects, where not only electrons but also ions can be directed onto the object under study. For example, it is known to equip a SEM with an additional ion radiation column. Ions are generated by means of an ion beam generator arranged in the ion radiation column, and these ions are used for preparing the object (e.g., grinding the material of the object or applying material to the object) or for imaging. SEM is used here particularly for observing the preparation process, but also for further study of prepared or unprepared objects.

[0006] In other known particle radiation devices, materials are applied to an object, for example, using a gas supply. Known particle radiation devices are combinations of electron and ion beams. A particle radiation device includes an electron beam and an ion beam. The electron beam provides an electron beam focused onto the object. The object is placed in an object chamber maintained under vacuum. The ion beam provides an ion beam also focused onto the object. The ion beam is used to remove, for example, a layer from the surface of the object. After removing this layer, another surface of the object is exposed. A gaseous precursor material (so-called precursor) can be introduced into the object chamber using a gas supply device. In other words, a gaseous precursor material is introduced into the object chamber. It is known that the gas supply device is designed with needle-shaped supply units that can be positioned very close to the object, within a few micrometers, so that the gaseous precursor material can be guided to that position as precisely as possible. A layer of material is deposited on the surface of the object through the interaction of the ion beam with the gaseous precursor material. For example, it is known to introduce gaseous phenanthrene as a gaseous precursor material into an object chamber via a gas supply device. A carbon layer or a carbon-containing layer is then deposited substantially on the surface of the object. It is also known to use precursor materials of metals in a gaseous state to deposit metals on the surface of the object. However, the deposit is not limited to carbon and / or metals. Rather, any material, such as semiconductors, nonconductors, or other compounds, can be deposited on the surface of the object. Furthermore, it is known to use gaseous precursor materials to abrade materials of an object when interacting with a particle beam.

[0007] To prevent the needle-shaped supply unit from interfering with further processes used for imaging, analyzing, and / or processing of an object in a particle radiation device, it is known to move the needle-shaped supply unit from a processing position to a resting position. At the processing position, gaseous precursor material is guided to the object. At the resting position, no gaseous precursor material is guided to the object. The needle-shaped supply unit is arranged at the resting position such that it does not affect further processes using the particle radiation device for imaging, analyzing, and / or processing of the object. When it is desired to supply gaseous precursor material to the object again, the needle-shaped supply unit is moved back to the processing position. Once the needle-shaped supply unit is back in the processing position, gaseous precursor material is guided to the object.

[0008] As mentioned above, precursors are used, for example, to deposit materials onto an object. The molecules of the gaseous precursor are broken down using a particle beam, particularly an electron beam or an ion beam. The resulting fragments are deposited on the surface of the object. It is known that the deposition of the precursor onto the object surface is achieved by guiding the particle beam along a pre-defined pattern in a manner corresponding to that pattern. The amount of fragments produced (i.e., essentially the deposition rate of the precursor on the object surface) depends on both the current and energy of the particles in the particle beam and the flow rate of the gaseous precursor guided to the object surface.

[0009] Furthermore, the deposition of the precursor on the object surface depends on the ratio of the current of the particle beam to the flow rate of the gaseous precursor on the object surface. This can be simplified as follows: When particles in the particle beam strike molecules of the gaseous precursor, the particles in the particle beam decompose the molecules. This produces fragments of the gaseous precursor molecules. These fragments are deposited on the object surface. When the number of charged particles in the particle beam on the object surface is increased by increasing the current of the particle beam, more molecules of the gaseous precursor decompose. This leads to an increased deposition rate. With a larger current corresponding to the particle beam, all existing molecules of the gaseous precursor are decomposed. However, this means that the deposition rate cannot be further increased by further increasing the current of the particle beam. Now, to achieve an increased deposition rate, it is proposed to increase the flow rate of the gaseous precursor on the object surface. In this regard, the deposition of the precursor depends on the ratio of the current of the particle beam to the flow rate of the gaseous precursor on the object surface.

[0010] In the case of using an ion beam to decompose the molecules of a gaseous precursor, it is known that the ions in the ion beam also abrade the material from the surface of the object. If the ions in the ion beam are accordingly used to decompose the molecules of the gaseous precursor, then a dynamic equilibrium exists between (on the one hand) the deposition of fragments of the gaseous precursor and (on the other hand) the abrasion of the object material. If the flow rate of the gaseous precursor to the surface of the object is not constant, it may occur that the initial deposit is abraded again from the object and / or the material of the object.

[0011] It is known that precursors are provided in a precursor reservoir in either a solid (i.e., in solid form) or liquid (i.e., in liquid form) state. The solid or liquid precursor is in equilibrium with a gaseous precursor. The individual atoms and molecules of the gaseous precursor determine its vapor pressure. When the precursor reservoir is opened by opening its valve, the gaseous precursor is guided via a conduit to a needle-shaped supply unit for supplying the gaseous precursor to the surface of the object. The flow rate of the gaseous precursor is determined by its vapor pressure, which in turn depends on its temperature. Therefore, to change the flow rate of the gaseous precursor to the surface of the object, it is known to change the temperature of the precursor reservoir and, consequently, the temperature of the precursor disposed within it. Since the temperature change in the precursor reservoir can last for several minutes, it is difficult to achieve an immediate change in the flow rate of the gaseous precursor to the surface of the object. Instead, the desired flow rate is achieved only after several minutes. It is also known that the pipelines and needle-shaped supply units should be heated to make them hotter than the precursor reservoir in order to prevent the precursor from condensing in the pipelines or needle-shaped supply units.

[0012] As mentioned above, the flow of gaseous precursors to the object surface can be initiated by opening the valve of the precursor reservoir. When the valve is opened, the gaseous precursor first flows through the conduit connecting the precursor reservoir to the needle-shaped supply unit, and is then guided to the object surface by means of the needle-shaped supply unit. Depending on the conduit length, the flow of gaseous precursors to the object surface is slowed down, particularly by two effects, making it difficult to achieve an immediately constant flow rate of gaseous precursors to the object surface. Specifically, the first effect leads to a reduction in the flow rate of gaseous precursors to the object surface. Before the valve of the precursor reservoir is opened, the precursors (in solid or liquid state) and (in gaseous state) are in thermodynamic equilibrium. If the valve is opened, the thermodynamic equilibrium becomes a dynamic equilibrium. Over time, this leads to a decrease in the flow rate of gaseous precursors to the object surface. The second effect leads to a decrease in the deposition rate. It is known that the precursors undergo continuous thermal decomposition. If the vapor pressure of the debris generated during precursor decomposition is higher than that of the precursor, an excessive flow rate of the gaseous precursor to the object surface will occur within a finite time when the valve of the precursor reservoir is opened. However, the increased flow rate does not improve the deposition rate; rather, it has been shown that the deposition rate generally decreases. Furthermore, when an electron or ion beam is directed to the object when the valve is opened, plasma discharge may occur due to the short-term increase in vapor pressure upon valve opening. Such plasma discharge is undesirable. The increased vapor pressure may also lead to undesirable mechanical changes on the object.

[0013] The flow of gaseous precursor to the object surface can be stopped by closing the valve of the precursor reservoir. However, it is known that the flow rate of gaseous precursor to the object surface decreases only slowly due to pipeline length and cross-section.

[0014] Gas supply devices are known that allow multiple precursors to be independently guided to an object via multiple needle-shaped supply units, each needle-shaped supply unit correspondingly supplying the precursor to the surface of the object. Due to the multiple needle-shaped supply units and the mechanical means used to orient the needle-shaped supply units relative to the surface of the object, these known gas supply devices require a considerable amount of structural space. It is also known that, when using multiple needle-shaped supply units, a first gaseous precursor may intrude from a first needle-shaped supply unit into a second needle-shaped supply unit used to supply a second gaseous precursor. This is undesirable as it could lead to chemical reactions, and particularly contamination of the pipelines and needle-shaped supply units.

[0015] For reference to prior art, see DE 10208043A1, US 2017 / 0294285A1, DE 102012001267A1, DE10 2015 204 091 A1, US 2011 / 0114665A1 and US2009 / 0223451A1. Summary of the Invention

[0016] Therefore, the objective of this invention is to provide a gas supply device and a particle radiation device having a gas supply device, which, on the one hand, can effectively achieve material deposition on an object, and on the other hand, allow the flow rate of the gaseous precursor to the object to be changed substantially immediately and kept substantially constant. Furthermore, it is desirable that the flow rate of the gaseous precursor to the object decreases rapidly when the precursor reservoir is closed. In addition, a method for operating the aforementioned gas supply device and the aforementioned particle radiation device should be provided, by which the above-mentioned features can be achieved.

[0017] According to the present invention, this objective is achieved by means of a gas supply device having the features described below. A particle radiation device having a gas supply device is provided by the features described below. The present invention also relates to a method for operating a gas supply device having the features described below, and a computer program product having the features described below. Furthermore, the present invention also relates to a method for operating a particle radiation device having the features described below, and a computer program product having the features described below. Other features of the present invention are derived from the following description, the appended claims, and / or the drawings.

[0018] The gas supply device according to the invention has at least one first precursor reservoir for receiving a first precursor. Furthermore, the gas supply device according to the invention has at least one second precursor reservoir for receiving a second precursor.

[0019] The first precursor is arranged in a first precursor reservoir, for example, in a solid or liquid state. The solid or liquid first precursor is in equilibrium with the gaseous first precursor. The individual atoms and molecules of the gaseous first precursor determine the vapor pressure of the first precursor. When the first precursor reservoir is opened by opening a valve, the gaseous first precursor is discharged from the first precursor reservoir.

[0020] The second precursor is arranged in a second precursor reservoir, for example, in a solid or liquid state. The solid or liquid second precursor is in equilibrium with the gaseous second precursor. The individual atoms and molecules of the gaseous second precursor determine its vapor pressure. When the second precursor reservoir is opened by opening its valve, the gaseous second precursor is discharged from the reservoir.

[0021] As mentioned above, the precursor is the precursor material used in this invention to deposit material onto the surface of an object in interaction with a particle beam. For example, gaseous phenanthrene is used as a first precursor and / or a second precursor. A carbon layer or a carbon-containing layer is then deposited substantially on the surface of the object. Alternatively, a precursor material having a metal can be used, for example, to deposit a metal onto the surface of the object. However, the deposit is not limited to carbon and / or metal. Rather, any material, such as a semiconductor, nonconductor, or other compound, can be deposited on the surface of the object. Furthermore, it is proposed, for example, to use a gaseous precursor to abrade the material of an object in interaction with a particle beam.

[0022] The gas supply device according to the invention has a supply unit for supplying a first precursor in a gaseous state and / or a second precursor in a gaseous state to the surface of an object. In particular, the gas supply device according to the invention has only one supply unit for supplying the first precursor in a gaseous state and / or the second precursor to the surface of the object. Therefore, the single supply unit is used to supply multiple precursors in a gaseous state (e.g., the first precursor and the second precursor), wherein the supply of the multiple precursors in a gaseous state is preferably not simultaneous, but rather the respective precursors in a gaseous state are supplied to the surface of the object sequentially in time. Alternatively, the gas supply unit according to the invention has multiple supply units for supplying the first precursor in a gaseous state and / or the second precursor in a gaseous state to the surface of the object.

[0023] The supply unit may be designed as a sleeve and / or as a needle. Implementations of the supply unit will be described later.

[0024] Furthermore, the gas supply device according to the invention has at least one first guiding device for guiding a first precursor in a gaseous state to the supply unit, wherein the first guiding device is disposed between the first precursor reservoir and the supply unit. Furthermore, the gas supply device according to the invention provides at least one second guiding device for guiding a second precursor in a gaseous state to the supply unit, wherein the second guiding device is disposed between the second precursor reservoir and the supply unit.

[0025] The gas supply device according to the invention has at least one first valve for controlling the flow rate of a first precursor in a gaseous state, wherein the first valve is arranged between a first guide device and a supply unit. Furthermore, the gas supply device according to the invention has at least one second valve for controlling the flow rate of a second precursor in a gaseous state, wherein the second valve is arranged between a second guide device and a supply unit. At least one third valve for controlling the flow rate of the first precursor in a gaseous state is arranged on the gas supply device according to the invention, wherein the third valve is arranged between the first guide device and a first precursor reservoir. At least one fourth valve for controlling the flow rate of the second precursor in a gaseous state is also arranged on the gas supply device according to the invention, wherein the fourth valve is arranged between the second guide device and the second precursor reservoir.

[0026] The gas supply device according to the invention further includes at least one control valve for controlling the flow rate of a first gaseous precursor and / or a second gaseous precursor to the supply unit. The control valve is connected to the first valve via a third guide device. Furthermore, the control valve is connected to the second valve via a fourth guide device. The control valve is arranged both between the first valve and the supply unit and between the second valve and the supply unit. The control valve is also connected to the supply unit for supplying the first gaseous precursor and / or the second gaseous precursor. The control valve is connected to the supply unit, for example, via a pipeline. Alternatively or otherwise, the control valve is a component of the supply unit.

[0027] It has been shown that the gas supply device according to the invention can effectively achieve the deposition of material onto an object. Furthermore, the gas supply device according to the invention operates such that the flow rate of the gaseous precursor to the object can be changed substantially immediately and remains substantially constant. This will be explained in detail later. Additionally, the gas supply device according to the invention operates such that the flow rate of the gaseous precursor to the object decreases rapidly when the precursor reservoir is closed. This will also be explained in more detail later.

[0028] In one embodiment of the gas supply device according to the invention, it is additionally or alternatively proposed that, starting from the first precursor reservoir and looking in the flow direction from the first precursor in its gaseous state to the supply unit, a third valve is arranged first along the first guide device, followed by a first valve. In another embodiment of the gas supply device according to the invention, it is additionally or alternatively proposed that, starting from the second precursor reservoir and looking in the flow direction from the second precursor in its gaseous state to the supply unit, a fourth valve is arranged first along the second guide device, followed by a second valve.

[0029] In another embodiment of the gas supply device according to the invention, it is additionally or alternatively provided that the gas supply device according to the invention has at least one of the following features:

[0030] (i) The first valve is designed to be a miniature valve;

[0031] (ii) The second valve is designed to be a miniature valve;

[0032] (iii) The control valve is designed as a miniature valve.

[0033] Here, a miniature valve is understood, both above and below, as a valve designed to be a small component. Miniature valves are used in flow control and microfluidics to control the flow of gas or liquid. Miniature valves are quite small valves. For example, the external dimensions of a miniature valve, especially its outer diameter, are less than 10 mm. The longitudinal extension dimension of a miniature valve is, for example, less than 50 mm. In particular, a miniature valve has an outer diameter of approximately 6 mm and a longitudinal extension dimension of approximately 35 mm.

[0034] In yet another embodiment of the gas supply device according to the invention, it is additionally or alternatively provided that the gas supply device according to the invention has at least one of the following features:

[0035] (i) The first valve is designed as a pulse valve;

[0036] (ii) The second valve is designed as a pulse valve;

[0037] (iii) The control valve is designed as a pulse valve.

[0038] Here, the pulse valve is understood, both above and below, as a valve that is controlled by a certain pulse frequency and can be alternately brought to a closed state and an open state according to the pulse frequency. The pulse frequency is, for example, in the range of 5Hz to 50Hz or 10Hz to 30Hz, where the range boundaries are collectively included within the aforementioned ranges. In particular, the pulse frequency is 10Hz.

[0039] In one embodiment of the gas supply device according to the invention, it is additionally or alternatively proposed that the gas supply device according to the invention has at least one cleaning line for supplying cleaning gas, wherein the cleaning line is arranged between a fifth valve for controlling the flow rate of the cleaning gas and a control valve. Furthermore, in this embodiment of the gas supply device according to the invention, at least one sixth valve for controlling the flow rate of the cleaning gas is provided, wherein, in the direction of flow of the cleaning gas along the cleaning line, the fifth valve is arranged first and then the sixth valve. By means of the cleaning gas, at least one of the aforementioned guiding devices and / or supply units can be cleaned in a manner that ensures the proper functioning of the gas supply device according to the invention.

[0040] In another embodiment of the gas supply device according to the invention, it is additionally or alternatively proposed that the gas supply device according to the invention has a first cleaning line device for guiding clean gas into a cleaning line, wherein the first cleaning line device is arranged between a fifth valve and a seventh valve for controlling the flow rate of the clean gas. The seventh valve is arranged in the gas supply device according to the invention. Alternatively or additionally proposed, the gas supply device according to the invention has at least one second cleaning line device for guiding clean gas into a cleaning line, wherein the second cleaning line device is arranged between the fifth valve and an eighth valve for controlling the flow rate of the clean gas. The eighth valve is arranged in the gas supply device according to the invention.

[0041] In yet another embodiment of the gas supply device according to the invention, it is additionally or alternatively provided that the gas supply device according to the invention has at least one of the following features:

[0042] (i) The fifth valve is designed as a needle valve;

[0043] (ii) The sixth valve is designed to be a miniature valve; and

[0044] (iii) The sixth valve is designed as a pulse valve.

[0045] Additionally or alternatively, in another embodiment of the gas supply device according to the invention, the gas supply device according to the invention includes a heating and / or cooling unit for heating and / or cooling a sixth valve. This ensures that the temperature of the sixth valve can be adjusted such that the temperature of the sixth valve is higher than the temperature of the first precursor reservoir and / or the second precursor reservoir, in order to reduce or prevent condensation of the first precursor and / or the second precursor in or at the sixth valve. Additionally or alternatively, at least one of the following features is provided in the gas supply device according to the invention:

[0046] (i) A first heating and / or cooling device for heating and / or cooling the first precursor reservoir;

[0047] (ii) A second heating and / or cooling device for heating and / or cooling the second precursor reservoir;

[0048] (iii) A third heating and / or cooling device for heating and / or cooling the first guide device, the second guide device, the third valve, and the fourth valve; and

[0049] (iv) A fourth heating and / or cooling device for heating and / or cooling the first valve, the second valve, the control valve and the supply unit.

[0050] The aforementioned heating and / or cooling devices also ensure that the temperature of the aforementioned units of the gas supply device according to the invention can be adjusted such that the temperature of the first precursor reservoir and / or the second precursor reservoir is lower than the temperature of all other units of the gas supply device according to the invention, in order to reduce or prevent condensation of the first precursor and / or the second precursor in these other units.

[0051] The present invention also relates to a particle radiation device for imaging, analyzing, and / or processing objects, the particle radiation device having at least one beam generator for generating a particle beam containing charged particles, such as electrons or ions. The particle radiation device, for example, is provided with an optical axis along which the particle beam is guided or can be guided. Additionally, the particle radiation device is equipped with at least one objective lens for focusing the particle beam onto the object. Furthermore, the particle radiation device according to the invention has an object chamber for arranging the object within the particle radiation device. The particle radiation device according to the invention also has at least one detector for detecting interacting particles and / or interacting radiation generated during the interaction of the particle beam with the object. Additionally, the particle radiation device according to the invention has at least one gas supply device having at least one of the features mentioned above or further below, or a combination of at least two of the features mentioned above or further below.

[0052] In another embodiment of the particle radiation device according to the invention, additionally or alternatively, a beam generator is designed as a first beam generator, wherein the particle beam is designed as a first particle beam having a first charged particle, and wherein an objective lens is designed as a first objective lens for focusing the first particle beam onto an object. Furthermore, the particle radiation device has at least one second beam generator for generating a second particle beam having a second charged particle, and a second objective lens for focusing the second particle beam onto an object.

[0053] In yet another embodiment of the particle radiation device according to the invention, the particle radiation device is an electron radiation device and / or an ion radiation device.

[0054] The present invention also relates to a method for operating a gas supply device having at least one of the features mentioned above or further below, or a combination of at least two of the features mentioned above or further below. The method has at least one of the following features:

[0055] (i) Using the gas supply device according to the invention to supply a single precursor in a gaseous state to an object;

[0056] (ii) Using the gas supply device according to the invention to supply a single precursor in a gaseous state to an object, wherein the first valve and / or the second valve and / or the control valve are operated in a pulsed manner;

[0057] (iii) Using the gas supply device according to the invention to supply a plurality of gaseous precursors to an object, wherein the first valve and / or the second valve are operated in a pulse manner such that either the first gaseous precursor or the second gaseous precursor is supplied to the object.

[0058] (iv) Cleaning at least one guide device of the gas supply device according to the invention using the gas supply device according to the invention, wherein for this purpose the control valve is closed, wherein the fifth and sixth valves are opened, and wherein the first and / or second valves are opened;

[0059] (v) Cleaning at least one guide device of the gas supply device according to the invention using the gas supply device according to the invention, wherein for this purpose a control valve is closed, a fifth valve is opened, a sixth valve is operated in a pulse manner, and a first valve and / or a second valve is opened;

[0060] (vi) Cleaning at least one guide device of the gas supply device according to the invention using the gas supply device according to the invention, wherein for this purpose the control valve is closed, wherein the fifth valve and the sixth valve are opened, and wherein the first valve and / or the second valve are operated in a pulse manner;

[0061] (vii) Cleaning the supply unit using the gas supply device according to the invention, wherein for this purpose the control valve is opened, wherein the fifth and sixth valves are opened, and wherein the first and / or second valves are closed;

[0062] (viii) Cleaning the supply unit using the gas supply device according to the invention, wherein for this purpose a control valve is opened, wherein a fifth valve is opened, wherein a sixth valve is operated in a pulse manner, and wherein a first valve and / or a second valve is closed;

[0063] (ix) Cleaning the supply unit using the gas supply device according to the invention, wherein for this purpose the control valves are operated in a pulse manner, wherein the fifth and sixth valves are opened, and wherein the first and / or second valves are closed;

[0064] (x) Using the gas supply device according to the invention to compensate for the load on the object, wherein for this purpose the control valve is opened, wherein the fifth valve and the sixth valve are opened, and wherein the first valve and / or the second valve is closed;

[0065] (xi) Using the gas supply device according to the invention to compensate for the load on the object, wherein for this purpose a control valve is opened, wherein a fifth valve is opened, wherein a sixth valve is operated in a pulse manner, and wherein a first valve and / or a second valve is closed.

[0066] The present invention also relates to a computer program product having program code that is loaded or can be loaded into a processor of a gas supply device, wherein the gas supply device has at least one of the features mentioned above or further below, or a combination of at least two of the features mentioned above or further below. When executed, the program code controls the gas supply device in such a way that a method having at least one of the features mentioned above or further below, or a combination of at least two of the features mentioned above or further below, is performed.

[0067] The present invention also relates to a method for operating a particle radiation device having at least one of the features mentioned above or further below, or a combination of at least two of the features mentioned above or further below. The method has at least one of the following features:

[0068] (i) Using the gas supply device of the particle radiation device according to the invention to supply a single precursor in a gaseous state to an object;

[0069] (ii) Using the gas supply device of the particle radiation device according to the invention to supply a single precursor in a gaseous state to an object, wherein the first valve and / or the second valve and / or the control valve are operated in a pulsed manner;

[0070] (iii) Using the gas supply device of the particle radiation device according to the invention to supply a plurality of gaseous precursors to an object, wherein the first valve and / or the second valve are operated in a pulsed manner such that either the first gaseous precursor or the second gaseous precursor is supplied to the object.

[0071] (iv) Cleaning at least one guide device of the gas supply device using the gas supply device of the particle radiation device according to the invention, wherein for this purpose the control valve is closed, wherein the fifth and sixth valves are opened, and wherein the first and / or second valves are opened;

[0072] (v) Cleaning at least one guide device of the gas supply device using the gas supply device of the particle radiation device according to the invention, wherein for this purpose a control valve is closed, a fifth valve is opened, a sixth valve is operated in a pulse manner, and a first valve and / or a second valve is opened;

[0073] (vi) Cleaning at least one guide device of the gas supply device using the gas supply device of the particle radiation device according to the invention, wherein for this purpose the control valve is closed, wherein the fifth and sixth valves are opened, and wherein the first and / or second valves are operated in a pulse manner;

[0074] (vii) The supply unit is cleaned using the gas supply device of the particle radiation apparatus according to the invention, wherein for this purpose the control valve is opened, wherein the fifth and sixth valves are opened, and wherein the first and / or second valves are closed;

[0075] (viii) Cleaning the supply unit using the gas supply device of the particle radiation device according to the invention, wherein for this purpose a control valve is opened, wherein a fifth valve is opened, wherein a sixth valve is operated in a pulse manner, and wherein a first valve and / or a second valve is closed;

[0076] (ix) Cleaning the supply unit using the gas supply device of the particle radiation apparatus according to the invention, wherein for this purpose the control valves are operated in a pulse manner, wherein the fifth and sixth valves are opened, and wherein the first and / or second valves are closed;

[0077] (x) Using the gas supply device of the particle radiation device according to the invention to compensate for the load on the object, wherein for this purpose the control valve is opened, wherein the fifth valve and the sixth valve are opened, and wherein the first valve and / or the second valve is closed;

[0078] (xi) Using the gas supply device of the particle radiation device according to the invention to compensate for the load on the object, wherein for this purpose a control valve is opened, wherein a fifth valve is opened, wherein a sixth valve is operated in a pulsed manner, and wherein a first valve and / or a second valve is closed.

[0079] The present invention also relates to a computer program product having program code that is loaded or can be loaded into a processor of a gas supply device for a particle radiation apparatus, wherein the particle radiation apparatus has at least one of the features mentioned above or further below, or a combination of at least two of the features mentioned above or further below. When executed, the program code controls the particle radiation apparatus by causing a method to be performed that has at least one of the features mentioned above or further below, or a combination of at least two of the features mentioned above or further below. Attached Figure Description

[0080] Further practical embodiments and advantages of the present invention are described below with reference to the accompanying drawings. In the drawings:

[0081] Figure 1 A first embodiment of the particle radiation device is shown;

[0082] Figure 2 A second embodiment of the particle radiation device is shown;

[0083] Figure 3 A third embodiment of the particle radiation device is shown;

[0084] Figure 4 A schematic diagram of the sample chamber and gas supply device is shown;

[0085] Figure 5 A schematic diagram of a gas supply device in its first operating mode is shown;

[0086] Figure 6 A schematic diagram of the gas supply device in the second operating mode is shown;

[0087] Figure 7 A schematic diagram of the gas supply device in the third operating mode is shown;

[0088] Figure 8 A schematic diagram of the gas supply device in the fourth operating mode is shown;

[0089] Figure 9 A schematic diagram of pulse control of the valve is shown;

[0090] Figure 10 A schematic diagram of the gas supply device in its fifth operating mode is shown;

[0091] Figure 11 A schematic diagram of the gas supply device in the sixth operating mode is shown;

[0092] Figure 12A schematic diagram of the gas supply device in its seventh operating mode is shown;

[0093] Figure 13 A schematic diagram of the gas supply device in the eighth operating mode is shown;

[0094] Figure 14 A schematic diagram of the gas supply device in the ninth operating mode is shown;

[0095] Figure 15 A schematic diagram of the gas supply device in its tenth operating mode is shown;

[0096] Figure 16 A schematic diagram of the gas supply device in the eleventh operating mode is shown;

[0097] Figure 17 A schematic diagram of the gas supply device in its twelfth operating mode is shown;

[0098] Figure 18 A schematic diagram of the gas supply device in its thirteenth operating mode is shown;

[0099] Figure 19 A schematic diagram of a system having a gas supply device and a gas supply unit is shown;

[0100] Figure 20 It shows that according to Figure 18 A schematic diagram of the gas supply unit of the system;

[0101] Figure 21 A schematic diagram of a movable unit with a control valve and a supply unit is shown.

[0102] Figure 22 A first schematic diagram of a gas storage device is shown; and

[0103] Figure 23 A second schematic diagram of a gas storage device is shown. Detailed Implementation

[0104] The invention will now be explained in detail with the aid of particle radiation devices in the form of SEMs and in the form of combined devices with electron and ion radiation columns. It should be clearly noted that the invention can be used in every type of particle radiation device, particularly in every type of electron radiation device and / or every type of ion radiation device.

[0105] Figure 1A schematic diagram of SEM 100 is shown. SEM 100 has a first beam generator, which is in the form of an electron source 101 designed as a cathode. SEM 100 also includes an extraction electrode 102 and an anode 103, which is connected to one end of the beam guide tube 104 of SEM 100. For example, the electron source 101 is designed as a thermal field emitter. However, the invention is not limited to this electron source 101. Any electron source can be used.

[0106] Electrons emanating from electron source 101 form a primary electron beam. These electrons are accelerated to the anode potential due to the potential difference between electron source 101 and anode 103. In the embodiment shown here, the anode potential is 100V to 35kV relative to the ground potential of the sample chamber 120 housing, for example, 5kV to 15kV, particularly 8kV. However, alternatively, the anode potential may also be at ground potential.

[0107] Two converging lenses, namely a first converging lens 105 and a second converging lens 106, are arranged at the beam guide tube 104. Here, viewed from the electron source 101 in the direction towards the first objective lens 107, the first converging lens 105 is arranged first, followed by the second converging lens 106. It should be clearly noted that another embodiment of the SEM 100 may have only a single converging lens. A first baffle unit 108 is arranged between the anode 103 and the first converging lens 105. The first baffle unit 108, together with the anode 103 and the beam guide tube 104, is either at a high voltage potential (i.e., the potential of the anode 103) or grounded. The first baffle unit 108 has a plurality of first baffle openings 108A, in... Figure 1 The diagram shows one of the plurality of first baffle openings. For example, there are two first baffle openings 108A. Each of the plurality of first baffle openings 108A has a different opening diameter. The desired first baffle opening 108A can be set on the optical axis OA of the SEM 100 by means of an adjustment mechanism (not shown). It should be clearly noted that in another embodiment, the first baffle unit 108 may be provided with only a single baffle opening 108A. In this embodiment, the adjustment mechanism may not be provided. The first baffle unit 108 is then designed to be fixed in position. A fixed second baffle unit 109 is arranged between the first converging lens 105 and the second converging lens 106. Alternatively, it is proposed that the second baffle unit 109 be designed to be movable.

[0108] The first objective lens 107 has pole shoes 110, in which holes are designed. A beam guide tube 104 is guided through these holes. A coil 111 is arranged in the pole shoes 110.

[0109] An electrostatic deceleration device is arranged in the lower region of the beam guide tube 104. This deceleration device has a separate electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged on the end of the beam guide tube 104 facing the object 125, which is arranged on a movably designed object holder 114.

[0110] The tubular electrode 113, together with the beam guide tube 104, is at the potential of the anode 103, while the individual electrode 112 and the object 125 are at a lower potential relative to the anode 103. In this case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be braked to the desired energy required to study the object 125.

[0111] SEM 100 also includes a scanning device 115, by which a primary electron beam is deflected and scanned on object 125. Here, electrons from the primary electron beam interact with object 125. The result of this interaction is the generation of interacting particles that are detected. These interacting particles are, in particular, electrons emitted from the surface of object 125—so-called secondary electrons—or electrons that are scattered back from the primary electron beam—so-called backscattered electrons.

[0112] The object 125 and the individual electrode 112 can also be at different potentials than ground. This allows the deceleration position of the primary electron beam relative to the object 125 to be set. If deceleration occurs, for example, at a point quite close to the object 125, the imaging error is smaller.

[0113] To detect secondary electrons and / or returned scattered electrons, a detector assembly is arranged in the beam guide tube 104, comprising a first detector 116 and a second detector 117. The first detector 116 is arranged along the optical axis OA on the source side, while the second detector 117 is arranged along the optical axis OA on the object side in the beam guide tube 104. The first detector 116 and the second detector 117 are staggered from each other in the direction of the optical axis OA of the SEM 100. Both the first detector 116 and the second detector 117 have through-openings through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potentials of the anode 103 and the beam guide tube 104. The optical axis OA of the SEM 100 extends through the corresponding through-openings.

[0114] The second detector 117 is primarily used to detect secondary electrons. Secondary electrons initially possess low kinetic energy and arbitrary direction of motion upon exiting object 125. Accelerated in the direction towards the first objective lens 107 by a strong suction field emanating from the tubular electrode 113, the secondary electrons enter the first objective lens 107 approximately parallel to it. The beam diameter of the secondary electron beam remains small within the first objective lens 107. The first objective lens 107 now strongly acts on the secondary electrons and produces a relatively short focusing beam with a sufficiently steep angle relative to the optical axis OA, causing the secondary electrons to further disperse after focusing and hit the second detector within its effective area. Conversely, only a small fraction of the electrons that are backscattered at object 125 (i.e., those with relatively high kinetic energy relative to the secondary electrons upon exiting object 125) are recorded by the second detector 117. The high kinetic energy of the return-scattered electrons as they leave object 125 and their angle relative to the optical axis OA result in a beam waist, i.e., a region with the smallest diameter, located near the second detector 117. Most of the return-scattered electrons pass through the through-hole of the second detector 117. The first detector 116 is therefore primarily used to record the return-scattered electrons.

[0115] In another embodiment of SEM 100, the first detector 116 may be designed to additionally have a reverse field grid 116A. The reverse field grid 116A is arranged on one side of the first detector 116 facing the object 125. The reverse field grid 116A has a negative potential relative to the beam guide tube 104, such that only high-energy return-scattered electrons pass through the reverse field grid 116A to reach the first detector 116. Additionally or alternatively, the second detector 117 has an additional reverse field grid designed similarly to the aforementioned reverse field grid 116A of the first detector 116 and has similar functionality.

[0116] Additionally, the SEM 100 has a sample chamber detector 119 in the sample chamber 120, such as an Everhart-Thomley detector or an ion detector with a light-shielding detection surface coated with metal.

[0117] The detection signals generated by the first detector 116, the second detector 117, and the sample chamber detector 119 are used to generate one or more images of the surface of the object 125.

[0118] It should be clearly pointed out that the baffle openings of the first baffle unit 108 and the second baffle unit 109, as well as the through openings of the first detector 116 and the second detector 117, are shown in exaggerated proportions. The through openings of the first detector 116 and the second detector 117 have dimensions perpendicular to the optical axis OA in the range of 0.5 mm to 5 mm. For example, they are designed to be circular and have diameters perpendicular to the optical axis OA in the range of 1 mm to 3 mm.

[0119] In the embodiment shown here, the second baffle unit 109 is configured as an orifice plate and has a second baffle opening 118 for allowing the primary electron beam to pass through. This second baffle opening has a size in the range of 5 μm to 500 μm, for example, 35 μm. Alternatively, in another embodiment, the second baffle unit 109 is provided with a plurality of baffle openings that can be mechanically deflected toward the primary electron beam or, in the case of the use of electrical and / or magnetic deflection elements, allow the primary electron beam to reach these openings. The second baffle unit 109 is designed as a pressure grading plate. This pressure grading plate will be equipped with an electron source 101 and will be dominated by ultra-high vacuum (10...). -7 hPa to 10 -12 The first region (hPa) and the region with high vacuum (10) -3 hPa to 10 -7 The second region (hPa) is separated from the middle pressure region of the guide sample chamber 120 of the beam guide tube 104.

[0120] Sample chamber 120 is under vacuum. A pump (not shown) is installed in sample chamber 120 to create this vacuum. Figure 1 In the embodiment shown, the sample chamber 120 operates within a first pressure range or a second pressure range. The first pressure range includes only pressures less than or equal to 10. -3 The pressure range is hPa, while the second pressure range only includes pressures greater than 10. -3 The pressure is hPa. To ensure these pressure ranges, sample chamber 120 is sealed in terms of vacuum technology.

[0121] An object holder 114 is arranged on an object carrier in the form of a sample stage 122. The sample stage 122 is configured to be movable in three mutually perpendicular directions: the x-direction (first stage axis), the y-direction (second stage axis), and the z-direction (third stage axis). Furthermore, the sample stage 122 can rotate about two mutually perpendicular rotation axes (stage rotation axes). The invention is not limited to the sample stage 122 described above. Instead, the sample stage 122 may have additional translational and rotational axes, and the sample stage 122 may move along or about these translational axes. This will be discussed in more detail later below.

[0122] SEM 100 also includes a third detector 121 arranged in the sample chamber 120. More precisely, when viewed from the electron source 101, the third detector 121 is arranged along the optical axis OA behind the sample stage 122. The sample stage 122 and the object holder 114 thereafter can be rotated such that the object 125 arranged on the object holder 114 can be transmitted through the primary electron beam. As the primary electron beam passes through the object 125 under study, the electrons of the primary electron beam interact with the material of the object 125 under study. The electrons passing through the object 125 under study are detected by the third detector 121.

[0123] A radiation detector 500 is arranged in the sample chamber 120 to detect interacting radiation, such as X-ray radiation and / or cathodoluminescence. Radiation detector 500, a first detector 116, a second detector 117, and a sample chamber detector 119 are connected to a control unit 123, which has a processor and a monitor 124. A third detector 121 is also connected to the control unit 123. For simplicity, it is not illustrated. The control unit 123 processes the detection signals generated by the first detector 116, the second detector 117, the sample chamber detector 119, the third detector 121, and / or the radiation detector 500 and displays them as images on the monitor 124.

[0124] The control unit 123 also has a database 126 in which data is stored and data is read from the database.

[0125] SEM 100 has a system with a gas supply device 1000 for supplying gas, such as a gaseous precursor substance, to specific locations on the surface of object 125. The gas supply device 1000 will be discussed in more detail later below.

[0126] Figure 2 A particle radiation device in the form of a combined device 200 is shown. The combined device 200 has two particle radiation columns. On one hand, the combined device 200 is provided with, as in... Figure 1 The image shows SEM 100, but not sample chamber 120. Instead, SEM 100 is placed in sample chamber 201. Sample chamber 201 is under vacuum. To create this vacuum, a pump (not shown) is placed in sample chamber 201. Figure 2 In the embodiment shown, the sample chamber 201 operates within a first pressure range or a second pressure range. The first pressure range includes only pressures less than or equal to 10. -3 The pressure range is hPa, while the second pressure range only includes pressures greater than 10. -3The pressure is hPa. To ensure these pressure ranges, sample chamber 201 is sealed in terms of vacuum technology.

[0127] A sample chamber detector 119 is arranged in the sample chamber 201. The sample chamber detector is designed, for example, an Everhart-Thornley detector or an ion detector, and the sample chamber detector has a light-shielding detection surface coated with metal. In addition, a third detector 121 is arranged in the sample chamber 201.

[0128] The SEM 100 is used to generate the first particle beam, namely the primary electron beam described earlier above, and has the optical axis already mentioned above, which is located in... Figure 2 Reference numeral 709 is provided in the accompanying drawing and is referred to hereinafter as the first beam axis. On the other hand, the combined device 200 includes an ionization radiation device 300, which is also arranged in the sample chamber 201. The ionization radiation device 300 also has an optical axis, which is located at... Figure 2 The figure is marked with reference numeral 710 and is referred to hereinafter as the second beam axis.

[0129] SEM 100 is arranged vertically relative to sample chamber 201. Conversely, ionization radiation device 300 is arranged at an angle of approximately 0° to 90° relative to SEM 100. Figure 2 For example, an arrangement of approximately 50° is shown. The ionization radiation device 300 has a second beam generator in the form of an ion beam generator 301. Ions are generated by the ion beam generator 301, which constitute a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302 at a pre-given potential. The second particle beam then passes through the ion optics of the ionization radiation device 300, wherein the ion optics have a converging lens 303 and a second objective lens 304. The second objective lens 304 ultimately produces an ion probe, which is focused onto an object 125 arranged at an object holder 114. The object holder 114 is arranged on a sample stage 122.

[0130] An adjustable or selectable baffle 306, a first electrode assembly 307, and a second electrode assembly 308 are arranged above the second objective lens 304 (i.e., in the direction of the ion beam generator 301), wherein the first electrode assembly 307 and the second electrode assembly 308 are designed as grid electrodes. A second particle beam scans the surface of the object 125 using the first electrode assembly 307 and the second electrode assembly 308, wherein the first electrode assembly 307 acts in a first direction, and the second electrode assembly 308 acts in a second direction opposite to the first direction. Thus, scanning is performed, for example, in the x-direction. Scanning is performed in the y-direction, perpendicular to the x-direction, by rotating additional electrodes (not shown) at the first electrode assembly 307 and the second electrode assembly 308 by 90°.

[0131] As described above, the object holder 114 is arranged on the sample stage 122. Figure 2 In the illustrated embodiment, the sample stage 122 is also configured to be movable in three mutually perpendicular directions: the x-direction (first stage axis), the y-direction (second stage axis), and the z-direction (third stage axis). Furthermore, the sample stage 122 can rotate about two mutually perpendicular rotation axes (stage rotation axes).

[0132] exist Figure 2 The distances between the various units of the combined device 200 shown are exaggerated in order to better illustrate the various units of the combined device 200.

[0133] A radiation detector 500 is arranged in sample chamber 201 to detect interacting radiation, such as X-ray radiation and / or cathodoluminescence. The radiation detector 500 is connected to a control unit 123, which has a processor and a monitor 124. The control unit 123 processes the detection signals from the first detector 116 and the second detector 117 (in...). Figure 2 (Not shown in the image) Sample chamber detector 119, third detector 121 and / or radiation detector 500 generate and display the image on monitor 124.

[0134] The control unit 123 also has a database 126 in which data is stored and data is read from the database.

[0135] The combined device 200 has a system with a gas supply device 1000 for supplying gas, such as a gaseous precursor substance, to specific locations on the surface of the object 125. The gas supply device 1000 will be discussed in more detail later below.

[0136] Figure 3A schematic diagram of another embodiment of the particle radiation device according to the present invention is shown. This embodiment of the particle radiation device is provided with reference numeral 400 and includes a mirror corrector for, for example, correcting color distortion and / or spherical distortion. The particle radiation device 400 includes a particle radiation column 401 formed as an electron radiation column and substantially corresponding to the electron radiation column of a corrected SEM. However, the particle radiation device 400 is not limited to an SEM with a mirror corrector. Rather, the particle radiation device can include any type of corrector unit.

[0137] The particle radiation column 401 includes a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403, and an anode 404. For example, the electron source 402 is designed as a thermal field emitter. Electrons exiting the electron source 402 are accelerated toward the anode 404 due to the potential difference between the electron source 402 and the anode 404. Accordingly, a particle beam in the form of an electron beam is formed along a first optical axis OA1.

[0138] After the particle beam leaves the electron source 402, it is guided along a beam path corresponding to the first optical axis OA1. A first electrostatic lens 405, a second electrostatic lens 406, and a third electrostatic lens 407 are used to guide the particle beam.

[0139] In addition, when using a beam guiding device, the particle beam is adjusted along the beam path. The beam guiding device in this embodiment includes a source adjustment unit having two magnetic deflection units 408 arranged along the first optical axis OA1. Furthermore, the particle radiation device 400 includes an electrostatic beam deflection unit. In another embodiment, a first electrostatic beam deflection unit 409, also designed as a quadrupole, is arranged between the second electrostatic lens 406 and the third electrostatic lens 407. The first electrostatic beam deflection unit 409 is also arranged after the magnetic deflection units 408. A first multipole unit 409A, in the form of the first magnetic deflection unit, is arranged on one side of the first electrostatic beam deflection unit 409. Furthermore, a second multipole unit 409B, in the form of a second magnetic deflection unit, is arranged on the other side of the first electrostatic beam deflection unit 409. The first electrostatic beam deflection unit 409, the first multipole unit 409A, and the second multipole unit 409B are adjusted to adjust the particle beam relative to the axis of the third electrostatic lens 407 and the entrance window of the beam deflection device 410. The first electrostatic beam deflection unit 409, the first multipole unit 409A, and the second multipole unit 409B can work together like a Wien filter. An additional magnetic deflection element 432 is arranged at the entrance of the beam deflection device 410.

[0140] The beam deflection device 410 serves as a particle beam deflector, deflecting the particle beam in a specific manner. The beam deflection device 410 includes multiple magnetic sectors: a first magnetic sector 411A, a second magnetic sector 411B, a third magnetic sector 411C, a fourth magnetic sector 411D, a fifth magnetic sector 411E, a sixth magnetic sector 411F, and a seventh magnetic sector 411G. The particle beam enters the beam deflection device 410 along the first optical axis OA1 and is deflected towards the second optical axis OA2 by the beam deflection device 410. The beam is deflected by angles from 30° to 120° by means of the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C. The second optical axis OA2 is oriented at the same angle as the first optical axis OA1. The beam deflection device 410 also deflects the particle beam guided along the second optical axis OA2, specifically towards the third optical axis OA3. This beam deflection is provided by the third magnetic sector 411C, the fourth magnetic sector 411D, and the fifth magnetic sector 411E. Figure 3 In the embodiment described herein, deflection toward the second optical axis OA2 and the third optical axis OA3 is provided by deflecting the particle beam by an angle of 90°. Thus, the third optical axis OA3 extends coaxially with the first optical axis OA1. However, it should be noted that the particle radiation device 400 is not limited to a deflection angle of 90° in the invention described herein. Rather, any suitable deflection angle, such as 70° or 110°, can be selected by the beam deflection device 410, such that the first optical axis OA1 and the third optical axis OA3 extend non-axially. For further details regarding the beam deflection device 410, see WO 2002 / 067286A2.

[0141] After the particle beam has been deflected by the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C, it is guided along the second optical axis OA2. The particle beam is guided to the electrostatic mirror 414 and proceeds along its path to the electrostatic mirror 414 via the fourth electrostatic lens 415, the third multipole unit 416A (in the form of a magnetic deflection unit), the second electrostatic beam deflection unit 416, the third electrostatic beam deflection unit 417, and the fourth multipole unit 416B (in the form of a magnetic deflection unit). The electrostatic mirror 414 includes a first mirror electrode 413A, a second mirror electrode 413B, and a third mirror electrode 413C. Electrons reflected back from the electrostatic mirror 414 again proceed along the second optical axis OA2 and re-enter the beam deflection device 410. These electrons are then deflected by the third magnetic sector 411C, the fourth magnetic sector 411D, and the fifth magnetic sector 411E to the third optical axis OA3.

[0142] Electrons from the particle beam exit the beam deflection device 410 and are guided along the third optical axis OA3 to an object 425, which is to be studied and arranged in an object holder 114. Along the path to the object 425, the particle beam is guided to a fifth electrostatic lens 418, a beam guide tube 420, a fifth multipole unit 418A, a sixth multipole unit 418B, and an objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. The particle beam is braked or accelerated by the fifth electrostatic lens 418 to the potential of the beam guide tube 420.

[0143] The particle beam is focused by objective lens 421 onto the focal plane on which object 425 is arranged. Object holder 114 is arranged on a movable sample stage 424. The movable sample stage 424 is arranged in the sample chamber 426 of the particle radiation device 400. The sample stage 424 is configured to be movable in three mutually perpendicular directions, namely in the x-direction (first stage axis), y-direction (second stage axis), and z-direction (third stage axis). Furthermore, the sample stage 424 can rotate about two mutually perpendicular rotation axes (stage rotation axes). This will be discussed in more detail later.

[0144] Sample chamber 426 is under vacuum. A pump (not shown) is installed in sample chamber 426 to create this vacuum. Figure 3 In the embodiment shown, sample chamber 426 operates within a first pressure range or a second pressure range. The first pressure range includes only pressures less than or equal to 10⁻⁶. 3 The pressure range is hPa, while the second pressure range only includes pressures greater than 10. -3 The pressure is hPa. To ensure these pressure ranges, sample chamber 426 is sealed in terms of vacuum technology.

[0145] Objective lens 421 can be designed as a combination of magnetic lens 422 and sixth electrostatic lens 423. The end of beam guide tube 420 can also be an electrode of an electrostatic lens. Particles in the particle radiation device are braked to the potential of object 425 after exiting beam guide tube 420. Objective lens 421 is not limited to the combination of magnetic lens 422 and sixth electrostatic lens 423. Rather, objective lens 421 can take any suitable form. For example, objective lens 421 can also be designed as a purely magnetic lens or a purely electrostatic lens.

[0146] The particle beam focused onto object 425 interacts with object 425, producing interacting particles. Specifically, secondary electrons are emitted from object 425 or reflected back at object 425. These secondary electrons or reflected electrons are accelerated again and guided along the third optical axis OA3 into the beam guide tube 420. The trajectories of the secondary electrons and reflected electrons extend in the opposite direction to the particle beam, particularly along the path of the particle beam.

[0147] The particle radiation device 400 includes a first analytical detector 419 arranged along the beam path between the beam deflector 410 and the objective lens 421. Secondary electrons traveling in a direction oriented at a large angle relative to the third optical axis OA3 are detected by the first analytical detector 419. Return scattered electrons and secondary electrons with a small interaxial spacing relative to the third optical axis OA3 at the location of the first analytical detector 419 (that is, return scattered electrons and secondary electrons with a small spacing relative to the third optical axis OA3 at the location of the first analytical detector 419) enter the beam deflector 410 and are deflected by the fifth magnetic sector 411E, the sixth magnetic sector 411F, and the seventh magnetic sector 411G along the detection beam path 427 to the second analytical detector 428. The deflection angle is, for example, 90° or 110°.

[0148] The first analytical detector 419 generates detection signals, which are essentially generated by the emitted secondary electrons. The detection signals generated by the first analytical detector 419 are directed to the control unit 123 and used to acquire information about the characteristics of the interaction range between the focused particle beam and the object 425. Specifically, when using the scanning device 429, the focused particle beam is scanned on the object 425. Using the detection signals generated by the first analytical detector 419, an image of the scanned area of ​​the object 425 can then be generated and displayed on a display unit. The display unit is, for example, a monitor 124 arranged at the control unit 123.

[0149] The second analyzer 428 is also connected to the control unit 123. The detection signal from the second analyzer 428 is directed to the control unit 123 and used to generate an image of the scanned area of ​​the object 425 and display it on a display unit. The display unit is, for example, a monitor 124 located at the control unit 123.

[0150] A radiation detector 500 is arranged in sample chamber 426 to detect interacting radiation, such as X-ray radiation and / or cathodoluminescence. The radiation detector 500 is connected to a control unit 123, which has a processor and a monitor 124. The control unit 123 processes the detection signal from the radiation detector 500 and displays it as an image on the monitor 124.

[0151] The control unit 123 also has a database 126 in which data is stored and data is read from the database.

[0152] The particle radiation device 400 has a system with a gas supply device 1000 for supplying gas, such as a gaseous precursor substance, to specific locations on the surface of the object 425. The gas supply device 1000 will be discussed in more detail later below.

[0153] The gas supply device 1000 will be discussed in more detail below with reference to SEM 100. The following applies correspondingly to the gas supply device 1000 used in the combined device 200 and the particle radiation device 400.

[0154] Figure 4 A schematic diagram of the sample chamber 120 of SEM 100 is shown. A first pump 127 is arranged in the sample chamber 120, which is connected to a second pump 129 via pump line 128. The second pump 129 has an outlet 130. For example, the first pump 127 is designed as a turbomolecular pump. Alternatively, the second pump 129 is designed as a backing pump. The invention is not limited to the two types of pumps described above. Rather, any type of pump suitable for the invention can be used.

[0155] Figure 4 An embodiment of the gas supply device 1000 according to the invention is also shown. Thus, the gas supply device 1000 according to the invention has a first precursor reservoir 1002 for receiving a first precursor, a second precursor reservoir 1003 for receiving a second precursor, and a third precursor reservoir 1004 for receiving a third precursor.

[0156] The first precursor is arranged in a first precursor reservoir 1002, for example, in a solid or liquid state. The solid or liquid first precursor is in equilibrium with the gaseous first precursor. The individual atoms and molecules of the gaseous first precursor determine the vapor pressure of the first precursor. When the first precursor reservoir 1002 is opened by opening a valve, the gaseous first precursor is discharged from the first precursor reservoir 1002. This will be discussed in more detail later.

[0157] The second precursor is arranged in a second precursor reservoir 1003, for example, in a solid or liquid state. The solid or liquid second precursor is in equilibrium with the gaseous second precursor. The individual atoms and molecules of the gaseous second precursor determine its vapor pressure. When the second precursor reservoir 1003 is opened by opening a valve, the gaseous second precursor is discharged from the second precursor reservoir 1003. This will be discussed in more detail later.

[0158] The third precursor is arranged in a third precursor reservoir 1004, for example, in a solid or liquid state. The solid or liquid third precursor is in equilibrium with the gaseous third precursor. The individual atoms and molecules of the gaseous third precursor determine its vapor pressure. When the third precursor reservoir 1004 is opened by opening a valve, the gaseous third precursor is discharged from the third precursor reservoir 1004. This will be discussed in more detail later.

[0159] It should be clearly stated that the present invention is not limited to using two or three precursor memories. Rather, any number of precursor memories suitable for use in the present invention can be used.

[0160] As mentioned above, the precursor is the precursor material used in this invention to deposit material onto the surface of an object in interaction with a particle beam. For example, gaseous phenanthrene is used as the first, second, and / or third precursor. A carbon layer or a carbon-containing layer is then substantially deposited on the surface of the object 125. Alternatively, a precursor material having a metal can be used, for example, to deposit a metal onto the surface of the object 125. However, the deposit is not limited to carbon and / or metal. Rather, any material, such as a semiconductor, nonconductor, or other compound, can be deposited on the surface of the object 125. Furthermore, it is proposed, for example, to use a gaseous precursor to abrade the material of the object 125 in interaction with a particle beam.

[0161] The gas supply device 1000 includes a supply unit 1001 for supplying a first precursor, a second precursor, and / or a third precursor in a gaseous state to the surface of the object 125. In the embodiment shown herein, only a single supply unit 1001 is provided for supplying the first precursor, the second precursor, and / or the third precursor in a gaseous state to the surface of the object 125. Therefore, the single supply unit 1001 is used to supply multiple precursors in a gaseous state (e.g., the first precursor, the second precursor, and the third precursor), wherein the supply of the multiple precursors in a gaseous state is preferably not simultaneous, but rather the respective precursors in a gaseous state are supplied to the surface of the object 125 sequentially in time. Alternatively, the gas supply unit 1000 may have multiple supply units 1001 for supplying the first precursor, the second precursor, and / or the third precursor in a gaseous state to the surface of the object 125.

[0162] The supply unit 1001 is designed, for example, as a sleeve and / or as a needle. For example, the supply unit 1001 has a supply opening with a diameter, for example, in the range of 10 μm to 1000 μm, particularly in the range of 400 μm to 600 μm.

[0163] The gas supply device 1000 has a first guiding device L1 for guiding a first gaseous precursor to a supply unit 1001, wherein the first guiding device L1 is disposed between a first precursor reservoir 1002 and the supply unit 1001. Furthermore, the gas supply device 1000 provides a second guiding device L2 for guiding a second gaseous precursor to the supply unit 1001, wherein the second guiding device L2 is disposed between a second precursor reservoir 1003 and the supply unit 1001. A seventh guiding device L7 for guiding a third gaseous precursor to the supply unit 1001 is disposed between a third precursor reservoir 1004 and the supply unit 1001.

[0164] The gas supply device 1000 has a first valve V1 for controlling the flow rate of a first precursor in a gaseous state, wherein the first valve V1 is arranged between the first guide device L1 and the supply unit 1001. The gas supply device 1000 also has a second valve V2 for controlling the flow rate of a second precursor in a gaseous state, wherein the second valve V2 is arranged between the second guide device L2 and the supply unit 1001. Furthermore, the gas supply device 1000 has a ninth valve V9 for controlling the flow rate of a third precursor in a gaseous state, wherein the ninth valve V9 is arranged between the seventh guide device L7 and the supply unit 1001.

[0165] The gas supply device 1000 has additional valves. Therefore, a third valve V3 for controlling the flow rate of a first gaseous precursor is arranged on the gas supply device 1000, wherein the third valve V3 is positioned between the first guide device L1 and the first precursor reservoir 1002. A fourth valve V4 for controlling the flow rate of a second gaseous precursor is also arranged on the gas supply device 1000, wherein the fourth valve V4 is positioned between the second guide device L2 and the second precursor reservoir 1003. Similarly, a tenth valve V10 for controlling the flow rate of a third gaseous precursor is also arranged on the gas supply device 1000, wherein the tenth valve V10 is positioned between the seventh guide device L7 and the third precursor reservoir 1004.

[0166] The gas supply device 1000 also includes a control valve 1005 for controlling the flow rate of a first gaseous precursor, a second gaseous precursor, and / or a third gaseous precursor to the supply unit 1001. The control valve 1005 is connected to a first valve V1 via a third guide device L3. Furthermore, the control valve 1005 is connected to a second valve V2 via a fourth guide device L4. The control valve 1005 is connected to a ninth valve V9 via an eighth guide device L8.

[0167] In the gas supply device 1000, starting from the first precursor reservoir 1002 and looking in the flow direction from the gaseous first precursor to the supply unit 1001, a third valve V3 is first arranged along the first guide device L1, followed by a first valve V1. Furthermore, in the gas supply device 1000, starting from the second precursor reservoir 1003 and looking in the flow direction from the gaseous second precursor to the supply unit 1001, a fourth valve V4 is first arranged along the second guide device L2, followed by a second valve V2. Moreover, starting from the third precursor reservoir 1004 and looking in the flow direction from the gaseous third precursor to the supply unit 1001, a tenth valve V10 is first arranged along the seventh guide device L7, followed by a ninth valve V9.

[0168] In the embodiment of the gas supply device 1000 shown here, the first valve V1, the second valve V2, the ninth valve V9, and / or the control valve 1005 are designed as miniature valves. Here, a miniature valve is understood, both above and below, as a valve designed to be a small component. Miniature valves are used for flow control and microfluidics to control the flow of gas or liquid. Miniature valves are quite small valves. For example, the external dimensions of a miniature valve, particularly its outer diameter, are less than 10 mm. The longitudinal extension dimension of a miniature valve is, for example, less than 50 mm. In particular, a miniature valve has an outer diameter of approximately 6 mm and a longitudinal extension dimension of approximately 35 mm. Furthermore, in the embodiment of the gas supply device 1000 shown here, the first valve V1, the second valve V2, the ninth valve V9, and / or the control valve 1005 are each designed as pulse valves. Here, a pulse valve is understood, both above and below, as a valve that is actuated at a certain pulse frequency and can be alternately brought to a closed state and an open state according to the pulse frequency. The pulse frequency is, for example, in the range of 5 Hz to 50 Hz or 10 Hz to 30 Hz, wherein the range boundaries are included together within the aforementioned ranges. In particular, the pulse frequency is 10 Hz.

[0169] In the gas supply device 1000 Figure 4 In the embodiment shown, the gas supply device 1000 has a cleaning line 1006 for supplying cleaning gas, wherein the cleaning line 1006 is arranged between a fifth valve V5 for controlling the flow rate of the cleaning gas and a control valve 1005. Furthermore, in this embodiment of the gas supply device 1000, a sixth valve V6 for controlling the flow rate of the cleaning gas is provided, wherein, viewed in the direction of the cleaning gas flow along the cleaning line 1006, the fifth valve V5 is arranged first, followed by the sixth valve V6. The sixth valve V6 is connected to the control valve 1005 and thus connected to the supply unit 1001 via a ninth guide device L9. With the help of the cleaning gas, at least one of the aforementioned guide devices L1, L2, L3, L4, L7, and L8 and / or the supply unit 1001 can be cleaned in a manner that ensures the proper functioning of the gas supply device 1000.

[0170] In the embodiment of the gas supply device 1000 shown here, it is proposed that the fifth valve V5 is designed as a needle valve, and / or the sixth valve V6 is designed as a miniature valve, and / or the sixth valve V6 is designed as a pulse valve.

[0171] The gas supply device 1000 also includes a first cleaning line device 1007 for guiding clean gas into the cleaning line 1006, wherein the first cleaning line device 1007 is arranged between a fifth valve V5 and a seventh valve V7 for controlling the flow rate of the clean gas. The seventh valve V7 is located at the gas supply device 1000. For example, the seventh valve V7 is connected to a first clean gas reservoir (not shown) for supplying the first clean gas. For example, nitrogen or oxygen is used as the first clean gas. Furthermore, the gas supply device 1000 includes a second cleaning line device 1008 for guiding clean gas into the cleaning line 1006, wherein the second cleaning line device 1008 is arranged between the fifth valve V5 and an eighth valve V8 for controlling the flow rate of the clean gas. The eighth valve V8 is located at the gas supply device 1000. For example, the eighth valve V8 is connected to a second clean gas reservoir (not shown) for supplying a second clean gas. For example, nitrogen or oxygen is used as the second clean gas.

[0172] The control valve 1005 is arranged between the first valve V1 and the supply unit 1001, the second valve V2 and the supply unit 1001, the ninth valve V9 and the supply unit 1001, and the sixth valve V6 and the supply unit 1001.

[0173] Furthermore, control valve 1005 is connected to supply unit 1001, which supplies a first precursor in gaseous state, a second precursor in gaseous state, a third precursor in gaseous state, and / or the aforementioned clean gas. Control valve 1005 is connected to supply unit 1001, for example, via line 1009. Alternatively or otherwise, control valve 1005 is a component of supply unit 1001.

[0174] The first guiding device L1 is connected to the pump outlet line 1010 via the eleventh valve V11, which in turn is connected to the pump line 128. In the flow direction of the first precursor in its gaseous state toward the supply unit 1001, the eleventh valve V11 is positioned after the third valve V3. The third valve V3 is, for example, designed as a 2-way valve. Furthermore, the second guiding device L2 is connected to the pump outlet line 1010 via the twelfth valve V12, which is connected to the pump line 128. In the flow direction of the second precursor in its gaseous state toward the supply unit 1001, the twelfth valve V12 is positioned after the fourth valve V4. The fourth valve V4 is, for example, designed as a 2-way valve. Additionally, the seventh guiding device L7 is connected to the pump outlet line 1010 via the thirteenth valve V13, which is connected to the pump line 128. Looking in the flow direction of the gaseous third precursor toward the supply unit 1001, the thirteenth valve V13 is arranged after the tenth valve V10. The tenth valve V10 is, for example, designed as a 2-way valve. Alternatively, in the above embodiment, the eleventh valve V11, twelfth valve V12, and thirteenth valve V13 can each be connected to a separate pump outlet line, which is connected, for example, to pump line 128. The eleventh valve V11 is, for example, switched in the opposite direction to the third valve V3. In other words, when the third valve V3 is closed, the eleventh valve V11 is open (and vice versa). The twelfth valve V12 is, for example, switched in the opposite direction to the fourth valve V4. In other words, when the fourth valve V4 is closed, the twelfth valve V12 is open (and vice versa). The thirteenth valve V13 is, for example, switched in the opposite direction to the tenth valve V10. In other words, when the tenth valve V10 is closed, the thirteenth valve V13 is open (and vice versa).

[0175] according to Figure 4 The embodiment of the gas supply device 1000 has the following features:

[0176] (i) A first heating and / or cooling device 1011 for heating and / or cooling a first precursor reservoir 1002;

[0177] (ii) A second heating and / or cooling device 1012 for heating and / or cooling the second precursor reservoir 1003;

[0178] (iii) A fifth heating and / or cooling device 1013 for heating and / or cooling the third precursor storage 1004;

[0179] (iv) A third heating and / or cooling device 1014 for heating and / or cooling the first guide device L1, the second guide device L2, the seventh guide device L7, the third valve V3, the fourth valve V4, and the tenth valve V10; and

[0180] (v) A fourth heating and / or cooling device 1015 for heating and / or cooling the first valve V1, the second valve V2, the ninth valve V9, the control valve 1005 and the supply unit 1001.

[0181] The third heating and / or cooling device 1014 and the fourth heating and / or cooling device 1015 are connected to the corresponding components to be cooled and / or heated in a conductive manner (not in...). Figure 4 (As shown in the diagram). The heating and / or cooling devices described above ensure that the temperature of the corresponding component to be cooled or heated in the gas supply device 1000 can be adjusted such that the temperature of the first precursor reservoir 1002, the second precursor reservoir 1003 and / or the third precursor reservoir 1004 is lower than the temperature of all other units in the gas supply device 1000, in order to reduce or prevent condensation of the first precursor, the second precursor and / or the third precursor in these other units.

[0182] The gas supply device 1000 also includes a heating and / or cooling unit 1016 for heating and / or cooling the sixth valve V6. The heating and / or cooling unit 1016 is connected to the sixth valve V6 via conductive technology (not in...). Figure 4 (As shown in the diagram). The above embodiments ensure that the temperature of the sixth valve V6 can be adjusted to be higher than the temperatures of the first precursor reservoir 1002, the second precursor reservoir 1003, and / or the third precursor reservoir 1004, so as to reduce or prevent condensation of the first precursor, the second precursor, and / or the third precursor in or at the sixth valve V6.

[0183] It has been shown that the gas supply device 1000 can effectively achieve material deposition on the object 125. Furthermore, the gas supply device 1000 can operate such that the flow rate of the corresponding gaseous precursor reaching the object 125 can be changed substantially immediately and remain substantially constant. Additionally, the gas supply device 1000 can operate such that the flow rate of the corresponding gaseous precursor reaching the object 125 decreases rapidly when the precursor reservoir is closed.

[0184] When, for example, the first precursor is to be deposited on the surface of object 125, eleventh valve V11 is closed, third valve V3 is opened, first valve V1 is opened, and control valve 1005 is opened. The gaseous first precursor then flows through first guide device L1, first valve V1, third guide device L3, and control valve 1005 to supply unit 1001 and the surface of object 125. The flow rate of the gaseous first precursor can be regulated, for example, by means of first valve V1 and / or control valve 1005. This will be discussed in more detail later.

[0185] When the first precursor is to be deposited on the surface of object 125 again, the deposition of the first precursor in a gaseous state on the surface of object 125 can be terminated as follows: First, close the first valve V1. Keep the third valve V3 open. Then wait a short period of time, during which the residue of the gaseous first precursor in the third guide device L3 is drawn out via the supply unit 1001. Then close the control valve 1005. The deposition of the first precursor is then restarted by first opening the control valve 1005 and then opening the first valve V1. It has been shown that this achieves a very rapid increase in the flow rate of the gaseous first precursor to object 125 because the gaseous first precursor does not need to fill the first guide device L1 again. Instead, the first guide device L1 is already filled with the gaseous first precursor.

[0186] When it is no longer permissible to deposit the first precursor on the surface of object 125, the deposition of the gaseous first precursor on the surface of object 125 can be terminated as follows: First, close control valve 1005. Then, close the third valve V3 and open the eleventh valve V11. Then, close the first valve V1 after approximately one minute or several minutes.

[0187] The above also applies to the supply of a second precursor in a gaseous state and / or a third precursor in a gaseous state.

[0188] In another embodiment of the invention, a pressure measuring device (not shown) is arranged at the sample chamber 120 to measure the pressure within the sample chamber 120. By means of the pressure measuring device, the pressure in the sample chamber 120 that changes due to the supply of a corresponding gaseous precursor can be determined, and a corresponding desired target pressure can be achieved within the sample chamber 120 by adjusting the opening ratios of the first valve V1, the second valve V2, the ninth valve V9, and the control valve 1005. This enables, in particular, rapid adjustment of the flow rate of the corresponding gaseous precursor to the surface of the object 125, especially in conjunction with adjusting the temperature of the corresponding precursor.

[0189] The first valve V1, the second valve V2, the ninth valve V9, the sixth valve V6, and the control valve 1005 can be opened and closed, for example, like a two-way valve. Alternatively, the valves can also operate in a pulsed manner, as described above. In particular, a pulse frequency of 10 Hz is used, and the pulse duration varies between 0 ms and 100 ms. It has been shown that this allows for a nearly constant flow rate from the corresponding gaseous precursor to the surface of object 125. The service life of the valves is then, for example, 250 hours. If the valves have been closed for an extended period, they may not be reliably opened with the first pulse. In this case, the valves are always operated in pulsed mode to open for a short period of a few seconds. Then, the valves are correctly opened and closed again. The same procedure is followed when the valves should be permanently open.

[0190] A computer program containing program code is loaded into the processor of the control unit 123. When executed, the program code controls the gas supply device 1000 or SEM 100 in such a way that various operating modes can be performed.

[0191] Figure 5 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 5 A gas supply device 1000 is shown in a first operating mode (i.e., operating with a single gas), in which a single gaseous precursor is directed to the surface of an object 125. Utilizing... Figure 5 The operating mode shown in the diagram guides the first gaseous precursor to the surface of object 125. In this operating mode, the third valve V3, the first valve V1, and the control valve 1005 are open. All other valves are closed. Figure 5 The flow direction of the gaseous first precursor is indicated by arrows. The flow rate of the precursor is regulated by the temperature of the first precursor reservoir 1002. This is done by the first heating and / or cooling device 1011.

[0192] Figure 6 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 6 A gas supply device 1000 is shown in a second operating mode (i.e., operating with a single gas), in which a single gaseous precursor is directed to the surface of an object 125. Utilizing... Figure 6The operating mode shown in the diagram guides a first gaseous precursor to the surface of object 125. In this operating mode, the third valve V3 and control valve 1005 are open. The first valve V1 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves are closed. Figure 6 The flow direction of the gaseous first precursor is shown by arrows. The flow rate of the precursor is regulated by the pulse frequency and pulse duration of the first valve V1. For example, the first valve V1 is controlled by the control unit 123 and is correspondingly connected to the control unit 123 by conductive or radio technology.

[0193] Figure 7 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 7 A gas supply device 1000 is shown in a third operating mode (i.e., operating with a single gas), in which a single gaseous precursor is directed to the surface of an object 125. Utilizing... Figure 7 The operating mode shown in the diagram guides a first gaseous precursor to the surface of object 125. In this operating mode, the third valve V3 and the first valve V1 are open. Control valve 1005 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves are closed. Figure 7 The flow direction of the first gaseous precursor is shown by arrows. The flow rate of the precursor is regulated by the pulse frequency and pulse duration of the control valve 1005. For example, the control valve 1005 is operated by the control unit 123 and is correspondingly connected to the control unit 123 via conductive or radio technology. This implementation is advantageous because the control valve 1005 is particularly easy to access. If the control valve 1005 must be replaced, it can be done quite easily.

[0194] Figure 8 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 8 A gas supply device 1000 in a fourth operating mode (i.e., operating with a mixed gas) is shown, in which a first gaseous precursor and a second gaseous precursor are alternately directed to the surface of an object 125. Utilizing... Figure 8The operating mode shown alternatingly directs a first gaseous precursor and a second gaseous precursor onto the surface of object 125. In this operating mode, the third valve V3 and the fourth valve V4 are open. Additionally, control valve 1005 is open. The first valve V1 and the second valve V2 operate in a pulsed manner and are therefore opened or closed according to the pulse frequency. All other valves are closed. Figure 8 The flow directions of the first gaseous precursor and the second gaseous precursor are indicated by arrows. The flow rates of the respective precursors are regulated by the pulse frequency and pulse duration of the first valve V1 and the second valve V2. For example, the first valve V1 and / or the second valve V2 are controlled by the control unit 123 and are correspondingly connected to the control unit 123 via conductive or radio technology. Figure 9 The diagram illustrates pulse control of a first valve V1 and a second valve V2. When one of these two valves, V1 and V2, is open, the other valve is closed.

[0195] Figure 10 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 10 A gas supply device 1000 in a fifth operating mode (i.e., a cleaning mode) is shown, in which one or more pipelines in the gas supply device 1000 are flushed and thus cleaned. Utilizing... Figure 10 The operating mode shown is used to clean the first guide device L1. In this operating mode, the seventh valve V7, the fifth valve V5, the sixth valve V6, the first valve V1, and the eleventh valve V11 are open. All other valves, especially control valve 1005, are closed. Therefore, the vacuum in sample chamber 120 is unaffected. If other pipelines need to be cleaned, the corresponding valves are opened in a similar manner. For example, a cleaning gas in the form of nitrogen or oxygen is introduced through the seventh valve V7 and guided through the first guide device L1. Figure 10 The direction of the clean gas flow is indicated by arrows. The flow rate of the clean gas is regulated by the fifth valve, V5.

[0196] Figure 11 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 11 A gas supply device 1000 in a sixth operating mode (i.e., a cleaning mode) is shown, in which one or more pipelines in the gas supply device 1000 are flushed and thus cleaned. Utilizing... Figure 11The operating mode shown is used to clean the first guide device L1. In this operating mode, the seventh valve V7, the fifth valve V5, the first valve V1, and the eleventh valve V11 are open. The sixth valve V6 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves, especially control valve 1005, are closed. Thus, the vacuum in the sample chamber 120 is unaffected. If other pipelines need to be cleaned, the corresponding valves are opened in a similar manner. For example, a cleaning gas in the form of nitrogen or oxygen is introduced through the seventh valve V7 and guided through the first guide device L1. Figure 11 The direction of clean gas flow is indicated by arrows. The flow rate of the clean gas is adjusted by the pulse frequency and pulse duration of the sixth valve V6. For example, the sixth valve V6 is controlled by the control unit 123 and is correspondingly connected to the control unit 123 via conductive or radio technology.

[0197] Figure 12 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 12 A gas supply device 1000 in a seventh operating mode (i.e., a cleaning mode) is shown, in which one or more pipelines in the gas supply device 1000 are flushed and thus cleaned. Utilizing... Figure 12 The operating mode shown is used to exemplarily clean the first guide device L1. In this operating mode, the seventh valve V7, the fifth valve V5, the sixth valve V6, and the eleventh valve V11 are open. The first valve V1 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves, especially control valve 1005, are closed. Thus, the vacuum in the sample chamber 120 is unaffected. If other pipelines need to be cleaned, the corresponding valves are opened in a similar manner. For example, a cleaning gas in the form of nitrogen or oxygen is introduced through the seventh valve V7 and guided through the first guide device L1. Figure 12 The direction of clean gas flow is indicated by arrows. The flow rate of the clean gas is adjusted by the pulse frequency and pulse duration of the first valve V1. For example, the first valve V1 is controlled by the control unit 123 and is correspondingly connected to the control unit 123 via conductive or radio technology.

[0198] Figure 13 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 13A gas supply device 1000 in its eighth operating mode (i.e., cleaning mode) is shown, in which the supply unit 1001 is flushed and thus cleaned. In this operating mode, the seventh valve V7, the fifth valve V5, the sixth valve V6, and the control valve 1005 are open. All other valves are closed. Clean gas in the form of nitrogen or oxygen is introduced, for example, through the seventh valve V7 and directed through the supply unit 1001. Figure 13 The direction of clean gas flow is shown by arrows.

[0199] Figure 14 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 14 A gas supply device 1000 in a ninth operating mode (i.e., a cleaning mode) is shown, in which the supply unit 1001 is flushed and thus cleaned. In this operating mode, the seventh valve V7, the fifth valve V5, and the control valve 1005 are open. The sixth valve V6 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves are closed. Clean gas in the form of nitrogen or oxygen is introduced, for example, through the seventh valve V7 and directed through the supply unit 1001. Figure 14 The direction of clean gas flow is indicated by arrows. The flow rate of the clean gas is adjusted by the pulse frequency and pulse duration of the sixth valve V6. For example, the sixth valve V6 is controlled by the control unit 123 and is correspondingly connected to the control unit 123 via conductive or radio technology.

[0200] Figure 15 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 15 A gas supply device 1000 in its tenth operating mode (i.e., cleaning mode) is shown, in which the supply unit 1001 is flushed and thus cleaned. In this operating mode, the seventh valve V7, the fifth valve V5, and the sixth valve V6 are open. The control valve 1005 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves are closed. Clean gas in the form of nitrogen or oxygen is introduced, for example, through the seventh valve V7 and directed through the supply unit 1001. Figure 15The direction of clean gas flow is indicated by arrows. The flow rate of the clean gas is adjusted by the pulse frequency and pulse duration of the control valve 1005. For example, the control valve 1005 is operated by the control unit 123 and is correspondingly connected to the control unit 123 via conductive or radio technology.

[0201] Figure 16 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 16 The gas supply device 1000 is shown in its eleventh operating mode (i.e., load compensation mode). In this operating mode, the seventh valve V7, the fifth valve V5, the sixth valve V6, and the control valve 1005 are open. All other valves are closed. For example, nitrogen or oxygen is introduced as a load compensation gas through the seventh valve V7 and continuously guided to the surface of the object 125 through the supply unit 1001. Figure 16 The arrows in the diagram indicate the flow direction of the load compensation gas.

[0202] Figure 17 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 17 The gas supply device 1000 is shown in its twelfth operating mode (i.e., load compensation mode). In this operating mode, the seventh valve V7, the fifth valve V5, and the control valve 1005 are open. The sixth valve V6 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves are closed. For example, nitrogen or oxygen is introduced as a load compensation gas through the seventh valve V7 and directed to the surface of the object 125 through the supply unit 1001. Figure 17 The direction of load compensation gas flow is indicated by arrows. The flow rate of the load compensation gas is adjusted by the pulse frequency and pulse duration of the sixth valve V6. For example, the sixth valve V6 is controlled by the control unit 123 and is correspondingly connected to the control unit 123 via conductive or radio technology.

[0203] Figure 18 The implementation method is based on Figure 4 The implementation method is based on that described above. The same components are provided with the same reference numerals. Please refer to the embodiments described above, which remain applicable here. Figure 18The gas supply device 1000 is shown in its thirteenth operating mode (i.e., load compensation mode). In this operating mode, the seventh valve V7, the fifth valve V5, and the sixth valve V6 are open. The control valve 1005 operates in a pulsed manner and is therefore opened or closed according to the pulse frequency. All other valves are closed. For example, nitrogen or oxygen is introduced as a load compensation gas through the seventh valve V7 and directed to the surface of the object 125 through the supply unit 1001. Figure 18 The direction of load compensation gas flow is indicated by arrows. The flow rate of the load compensation gas is adjusted by the pulse frequency and pulse duration of control valve 1005. For example, control valve 1005 is operated by control unit 123 and is correspondingly connected to control unit 123 via conductive or radio technology.

[0204] Figure 19 The system 2000 is shown, which includes a gas supply device 1000 (now shown in dashed lines) and a gas supply unit 2001. According to... Figure 19 The gas supply device 1000 of the embodiment includes a first valve V1, a second valve V2, a ninth valve V9, a sixth valve V6, a third guide device L3, a fourth guide device L4, an eighth guide device L8, a ninth guide device L9, a control valve 1005, a pipeline 1009, and a supply unit 1001. Furthermore, the gas supply device 1000 includes some devices from the first guide device L1, the second guide device L2, the seventh guide device L7, and the cleaning pipeline 1006. (The last sentence appears to be incomplete and possibly refers to a different implementation.) Figure 4 All other features of the gas supply device 1000 described more recently above are now arranged in the gas supply unit 2001, particularly the first precursor reservoir 1002, the second precursor reservoir 1003, the third precursor reservoir 1004, and portions of the devices from the first guide device L1, the second guide device L2, the seventh guide device L7, and the cleaning line 1006. Therefore, please refer to the above description of the gas supply device 1000. Figure 4 The resulting implementation schemes remain applicable here.

[0205] The gas supply device 1000 is at least partially or completely detachably arranged on the gas supply unit 2001. For example, it is proposed that the gas supply device 1000 has fastening means for detachably fastening the gas supply device 1000 to the gas supply unit 2001. To detachably fasten the gas supply device 1000, i.e., to the gas supply unit 2001, the fastening means, for example, have plug-in connection means that interconnect voltage lines and / or current lines. Voltage lines and / or current lines are used, for example, for the operation of the fourth heating and / or cooling device 1015 and the heating and / or cooling unit 1016. Furthermore, additionally or alternatively, it is proposed that the first guide device L1, the second guide device L2, the seventh guide device L7, and / or the cleaning line 1006 are designed to be plug-in connected.

[0206] For this purpose, the first guide device L1, for example, has a first plug-in unit and a second plug-in unit capable of connecting to the first plug-in unit. The first plug-in unit is, for example, arranged at the gas supply unit 1000. The second plug-in unit is, for example, arranged at the gas supply unit 2001. The first plug-in unit is, for example, introduced into the second plug-in unit. In particular, the first plug-in unit and / or the second plug-in unit are provided with at least one sealing unit on the outer and / or inner sides, so that the first plug-in unit is sealed against the second plug-in unit. The second guide device L2, the seventh guide device L7, and the cleaning line 1006 also correspondingly have first plug-in units and second plug-in units, which are designed as described for the plug-in unit of the first guide device L1.

[0207] Figure 20 The diagram illustrates the following: Figure 19 Gas supply device 1000. Identical components are marked with the same reference numerals. Gas supply device 1000 is arranged in gas supply unit 2001 such that gas supply device 1000 is inserted into the tubular element of gas supply unit 2001. For this purpose, gas supply unit 2001 has at least one sealing portion 2002 on its outer side. When gas supply device 1000 is arranged at the tubular element of gas supply unit 2001, gas supply device 1000 and gas supply unit 2001 are sealed against each other.

[0208] The first guide device L1, the second guide device L2, the seventh guide device L7, and the cleaning line 1006 extend within the tubular element of the gas supply unit 2001. For clarity, in Figure 20 Only the first guide device L1 and the second guide device L2 are shown in the diagram. The following description of the first guide device L1 and the second guide device L2 also applies similarly to the seventh guide device L7 and / or the cleaning line 1006.

[0209] A first heating and / or cooling element 2003 is arranged at the first guide device L1. The heating and / or cooling element 2003 is, for example, designed as a heating wire wound around the first guide device L1. Furthermore, a second heating and / or cooling element 2004 is arranged at the second guide device L2. The heating and / or cooling element 2004 is, for example, designed as a heating wire wound around the second guide device L2. In another embodiment, a single heating and / or cooling element is arranged at both the first guide device L1 and the second guide device L2.

[0210] The first guiding device L1 has a first plug-in unit 2005A and a second plug-in unit 2006A capable of connecting to the first plug-in unit 2005A. In this embodiment, the first plug-in unit 2005A is arranged at the gas supply unit 2001. The second plug-in unit 2006A is arranged, for example, at the gas supply device 1000. In particular, the first plug-in unit 2005A is introduced into the second plug-in unit 2006A. For example, it is proposed that the first plug-in unit 2005A and / or the second plug-in unit 2006A have at least one sealing unit on the outer and / or inner sides, so that the first plug-in unit 2005A is sealed against the second plug-in unit 2006A.

[0211] The second guiding device L2 has a first plug-in unit 2005B and a second plug-in unit 2006B capable of connecting to the first plug-in unit 2005B. In this embodiment, the first plug-in unit 2005B is arranged at the gas supply unit 2001, while the second plug-in unit 2006B is arranged, for example, at the gas supply device 1000. For example, the first plug-in unit 2005B is introduced into the second plug-in unit 2006B. In particular, the first plug-in unit 2005B and / or the second plug-in unit 2006B are provided with at least one sealing unit on the outer and / or inner sides, so that the first plug-in unit 2005B is sealed against the second plug-in unit 2006B.

[0212] according to Figure 20The gas supply device 1000 has a fourth heating and / or cooling device 1015 as described above. The fourth heating and / or cooling device 1015 has a temperature sensor 2008 and a third heating and / or cooling element 2009. The temperature sensor 2008 and the third heating and / or cooling element 2009 are arranged in the substrate 2007 of the gas supply device 1000. The temperature sensor 2008 is designed, for example, as a semiconductor temperature sensor. However, the invention is not limited to using such a temperature sensor. Rather, any temperature sensor suitable for use in the invention can be used as the temperature sensor. The third heating and / or cooling element 2009 is designed, for example, as a heating wire. However, the invention is not limited to using a heating wire. Rather, any heating and / or cooling unit suitable for use in the invention can be used for the third heating and / or cooling element 2009.

[0213] The third heating and / or cooling element 2009 has a first plug-in connection device 2010A and a second plug-in connection device 2010B. In this embodiment, the first plug-in connection device 2010A is arranged at the gas supply unit 2001, while the second plug-in connection device 2010B is arranged at the gas supply device 1000. For example, the first plug-in connection device 2010A is introduced into the second plug-in connection device 2010B. The first plug-in connection device 2010A and the second plug-in connection device 2010B interconnect voltage lines and / or current lines. The voltage lines and / or current lines are used, for example, for the operation of the fourth heating and / or cooling device 1015 and the heating and / or cooling unit 1016. Other possibilities of use will be described later.

[0214] As mentioned above, the gas supply device 1000 includes a first valve V1, a second valve V2, and a control valve 1005. In this embodiment, the first valve V1, the second valve V2, and the control valve 1005 are each designed as solenoid valves.

[0215] The first valve V1 is designed as a two-piece solenoid valve. The first component of the solenoid valve is a first coil 1017. The second component is a movable first valve body 1018. The movable first valve body 1018 is surrounded by the first coil 1017. When the first coil 1017 of the solenoid valve is energized, the first valve body 1018 moves to the open position, releasing a flow path for the gaseous first precursor between the inlet and outlet of the solenoid valve. When the first coil 1017 is not energized, the first valve body 1018 is brought to a locked position, in which the flow path for the gaseous first precursor is closed.

[0216] The second valve V2 is also designed as a two-piece solenoid valve. The first component of this solenoid valve is a second coil 1019. The second component is a movable second valve body 1020, which is surrounded by the second coil 1019. When the second coil 1019 is energized, the second valve body 1020 moves to the open position, releasing a flow path for the gaseous second precursor between the inlet and outlet of the solenoid valve. When the second coil 1019 is not energized, the second valve body 1020 is brought to a locked position, where the flow path for the gaseous second precursor is closed.

[0217] The control valve 1005 is also designed as a two-piece solenoid valve. The first component of this solenoid valve consists of a third coil 1021. The second component consists of a movable third valve body 1022. The movable third valve body 1022 is surrounded by the third coil 1021. When the third coil 1021 of the solenoid valve is energized, the third valve body 1022 moves to the open position, releasing the flow path for the first and / or second precursor in a gaseous state between the inlet and outlet of the solenoid valve. When the third coil 1021 is not energized, the third valve body 1022 is brought to a locked position, in which the flow path for the first and / or second precursor in a gaseous state is closed.

[0218] For example, the first coil 1017 of the first valve V1, the second coil 1019 of the second valve V2, and / or the third coil 1021 of the control valve 1005 can be energized by voltage lines and / or current lines provided by the first plug-in connection device 2010A and the second plug-in connection device 2010B.

[0219] For example, it is proposed that at least one of the aforementioned solenoid valves is designed as a miniature valve. Regarding miniature valves, refer to the earlier embodiments described above, which also apply here.

[0220] The gas supply device 1000 has at least one of the following features:

[0221] (i) The first valve V1 is designed as a pulse solenoid valve;

[0222] (ii) The second valve V2 is designed to be a pulse solenoid valve;

[0223] (iii) The ninth valve, V9, is designed as a pulse solenoid valve;

[0224] (iv) The sixth valve, V6, is designed as a pulse solenoid valve; and

[0225] (v) Control valve 1005 is designed as a pulse solenoid valve.

[0226] As discussed above, a pulse solenoid valve is understood to be a valve that is controlled by a certain pulse frequency and can be alternately brought to a closed state (locked position) and an open state (open position) according to the pulse frequency. The pulse frequency is, for example, in the range of 5Hz to 50Hz or 10Hz to 30Hz, wherein the range boundaries are included together within the aforementioned ranges. In particular, the pulse frequency is 10Hz.

[0227] The third guide device L3 and the fourth guide device L4 share a common connection section 1023, which is connected to the control valve 1005. In other words, the third guide device L3 and the fourth guide device L4 pass through the common connection section 1023. Thus, the connection section 1023 is also connected to the control valve 1005. The first end of the common connection section 1023 is connected to the third guide device L3 and the fourth guide device L4. Furthermore, the second end of the common connection section 1023 is connected to the control valve 1005.

[0228] In another embodiment of the gas supply device 1000, it is additionally or alternatively proposed that the gas supply device 1000 has a first section and a second section. A first guide device L1, a second guide device L2, a seventh guide device L7, and a cleaning line 1006 are arranged in the first section. A first valve V1, a second valve V2, a ninth valve V9, a sixth valve V6, and a control valve 1005 are arranged in the second section. In an embodiment of the gas supply device 1000 according to the invention, the first section is detachably arranged in the second section. In other words, the gas supply device 1000 is designed as at least two parts. The first part is constituted by the first section, and the second part is constituted by the second section. In the above embodiments, in order to detachably arrange the first section in the second section, the first section and / or the second section also have, for example, plug-in connection devices that interconnect voltage lines and / or current lines. Furthermore, it is additionally or alternatively proposed that the first guide device L1 and / or the second guide device L2 are designed as plug-in connections. For this purpose, the first guide device L1, for example, has a first plug-in unit that can connect to a second plug-in unit disposed on the first valve V1. Furthermore, it is proposed, for example, that the second guide device L2 has a third plug-in unit that can connect to a fourth plug-in unit disposed at the second valve V2. In particular, it is proposed that the first, second, third, and / or fourth plug-in units have at least one sealing unit on their outer and / or inner sides, so that these interconnected plug-in units are sealed against each other. The above also similarly applies to the seventh guide device L7 and the cleaning line 1006.

[0229] exist Figure 20 In the embodiment shown, the control valve 1005 and the supply unit 1001 form a movable unit 1024. The movable unit 1024 is detachably arranged in and / or at the gas supply device 1000. The movable unit 1024 again... Figure 21 The following is illustrated. In other words, the movable unit 1024, having a control valve 1005 and a supply unit 1001, can be detached from and secured to the gas supply device 1000. A sealing unit 1028 is arranged on the outside of the movable unit 1024. As shown above, the control valve 1005 has a movable third valve body 1022 and a third coil 1021. The movable third valve body 1022 is surrounded by the third coil 1021. In another embodiment of the gas supply device 1000, only the movable third valve body 1022 and the supply unit 1001 form the movable unit 1024.

[0230] The first valve V1 and the second valve V2 can be designed, for example, essentially like the movable unit 1024, but without the supply unit 1001.

[0231] To shield the electromagnetic fields of the first coil 1017, the second coil 1019, and the third coil 1021, shielding portions 1027 are respectively arranged at the first end section 1025 and the second end section 1026 of the base 2007 of the gas supply device 1000. Furthermore, the base 2007 has shielding portions 1027 on its entire outer surface or substantially on its entire outer surface. The shielding portions 1027 are designed, for example, to be made of μ metal.

[0232] If it is necessary to replace one of the above valves (especially the first valve V1, the second valve V2, and / or the control valve 1005) for any reason, this can be done, for example, as follows:

[0233] - On the one hand, the entire gas supply device 1000 is separated from the gas supply unit 2001. Then the valve to be replaced in the gas supply device 1000 can be replaced. Then the gas supply device 1000 is placed back on the gas supply unit 2001.

[0234] If the gas supply unit 1000 has two sections, separate the first section from the second section. The valve to be replaced can then be replaced. Then reconnect the first section to the second section.

[0235] - On the other hand, the control valve 1005 can be easily replaced. This can be done either by pulling the movable unit 1024 out of the base 2007 and then inserting another movable unit 1024 back into the base 2007. Alternatively, the movable third valve body 1022 and the supply unit 1001 can be removed, and another movable third valve body 1022 can be inserted back into the base 2007 along with the supply unit 1001 or another supply unit 1001.

[0236] Solenoid valves are easier to replace compared to existing technologies. At least the components within a solenoid valve are easy to replace. For example, the valve body of a solenoid valve can be pulled out from its coil. Therefore, disconnecting the electrical connection is not necessarily required.

[0237] Figure 22 A gas reservoir 3000 is shown, which is used, for example, in this invention. In particular, the first precursor reservoir 1002, the second precursor reservoir 1003, and / or the third precursor reservoir 1004 are designed like the gas reservoir 3000.

[0238] The gas storage device 3000 has a base body 3001, wherein the base body 3001 is provided with a first receiving unit 3002 and a second receiving unit 3003. The first receiving unit 3002 is arranged on the second receiving unit 3003. The first receiving unit 3002 has a first internal space 3037. The second receiving unit 3003 has a second internal space 3036.

[0239] A gas receiving unit 3004 is arranged in the first internal space 3037 of the first receiving unit 3002 of the basic body 3001. A precursor 3035 is arranged in the gas receiving unit 3004, for example. The precursor 3035 is arranged in the gas receiving unit 3004, for example, in a solid or liquid state. The solid or liquid precursor 3035 is in equilibrium with the gaseous precursor 3035. The individual atoms and molecules of the gaseous precursor 3035 determine the vapor pressure of the precursor 3035. When the gas reservoir 3000 is opened by opening a valve, the gaseous precursor 3035 is discharged from the gas reservoir 3000.

[0240] In addition, the gas receiving unit 3004 has a gas outlet opening 3005 and a movable closing unit 3006, which is used to open or close the gas outlet opening 3005 of the gas receiving unit 3004.

[0241] The gas reservoir 3000 has a sliding unit 3007 movably arranged within the second internal space 3036 of the second receiving unit 3003 of the base 3001. The sliding unit 3007 is provided with a sliding unit guide 3008. The sliding unit guide 3008 is designed to move a movable enclosed unit 3006. The sliding unit guide 3008 has a first opening 3009 and a second opening 3010. The base 3001 has a first base opening 3011 and a second base opening 3012. The first base opening 3011 can be connected to a pump, for example, a first pump 127. The second base opening 3012 can be connected to a guide device for supplying gas to the object 125. The guide device is designed, for example, as a first guide device L1, a second guide device L2, or a seventh guide device L7.

[0242] The sliding unit 3007 can be moved to a first position and a second position. For this purpose, an actuator 3013 is used to move the sliding unit 3007 linearly along the longitudinal axis of the base 3001 within a second internal space 3036. An isolator 3014 is arranged between the actuator 3013 and the sliding unit 3007. The actuator 3013 is designed, for example, as a linear motor. However, the invention is not limited to a linear motor. Rather, any actuator suitable for use in the invention can be used as the actuator 3013.

[0243] In the first position of the sliding unit 3007, the first opening 3009 of the sliding unit guide device 3008 is fluidly connected to the first base body opening 3011, and the second opening 3010 of the sliding unit guide device 3008 is fluidly connected to the second base body opening 3012. Correspondingly, the first base body opening 3011 and the second base body opening 3012 are also fluidly connected. In the first position of the sliding unit 3007, the first opening 3009 of the sliding unit guide device 3008 is arranged at the first base body opening 3011. The closing unit 3006 closes the gas outlet opening 3005 of the gas receiving unit 3004. Therefore, in the first position of the sliding unit 3007, it is possible to pump out the guide device for supplying gas to the object 125 by means of a pump unit. Figure 22 The sliding unit 3007 is shown in the first position.

[0244] In the second position of the sliding unit 3007, the first opening 3009 of the sliding unit guide device 3008 is arranged on the inner wall 3015 of the second receiving unit 3003, and the second opening 3010 of the sliding unit guide device 3008 is arranged at the closing unit 3006. Figure 23 The second position of the sliding unit 3007 is shown. Figure 23 Therefore Figure 22Based on this, the same components are labeled with the same reference numerals.

[0245] As described above, the sliding unit 3007 is designed to be movable. More specifically, the sliding unit 3007 is designed to interact with the closing unit 3006 when moving to the second position, such that the second opening 3010 of the sliding unit guide 3008 is sealed due to contact between the sliding unit guide 3008 and the closing unit 3006, and the first opening 3009 of the sliding unit guide 3008 is arranged on the inner wall 3015 of the second receiving unit 3003. Furthermore, the sliding unit 3007 interacts with the closing unit 3006 such that the closing unit 3006 releases the gas outlet opening 3005 of the gas receiving unit 3004. In other words, the gas outlet opening 3005 is opened.

[0246] The sliding unit 3007 has a side 3027 pointing toward the closing unit 3006, which is used for operative connection with the closing unit 3006 and for moving the closing unit 3006. More specifically, the side 3027 is arranged on the sliding unit guide 3008. This side 3027 of the sliding unit 3007 further has a sliding unit seal 3028. In a second position of the sliding unit 3007, the sliding unit seal 3028 is arranged in a sealing manner on the closing unit 3006.

[0247] In the first position of the sliding unit 3007, the movable sealing unit 3006 closes the gas outlet opening 3005 of the gas receiving unit 3004. In the second position of the sliding unit 3007, the movable sealing unit 3006 is arranged spaced apart from the gas outlet opening 3005, thereby allowing the gas outlet opening 3005 to open. In other words, when the sliding unit 3007 moves to the second position, the sliding unit 3007 interacts with the movable sealing unit 3006 by arranging the movable sealing unit 3006 spaced apart from the gas outlet opening 3005, thereby allowing the gas outlet opening 3005 to open.

[0248] The movable sealing unit 3006 is pre-tightened toward the second receiving unit 3003 of the base body 3001. For this purpose, a spring unit 3016 is provided, arranged between the side 3017 of the sealing unit 3006 pointing toward the internal space 3019 of the gas receiving unit 3004 and the protrusion 3018 in the internal space 3019. The spring unit 3016 has a first end 3020 and a second end 3021, the first end being located at the side 3017 and the second end at the protrusion 3018. When the sliding unit 3007 is brought back from the second position to the first position, the movable sealing unit 3006 is moved based on the pre-tightening provided by the spring unit 3016, such that the gas outlet opening 3005 of the gas receiving unit 3004 is closed by the movable sealing unit 3006, thereby preventing further gas leakage from the gas outlet opening 3005.

[0249] The movable sealing unit 3006 has a sealing unit seal 3022 on its side facing the inner wall 3023 of the gas receiving unit 3004. In the first position of the sliding unit 3007, the sealing unit seal 3022 of the movable sealing unit 3006 is arranged in a sealing manner on the inner wall 3023 of the gas receiving unit 3004. In other words, when the sliding unit 3007 is in the first position, the movable sealing unit 3006 seals the gas outlet opening 3005. Thus, no gas can escape from the gas receiving unit 3004 through the gas outlet opening 3005.

[0250] The gas receiving unit 3004 has a gas receiving unit seal 3025 on the outer side 3024 of the first receiving unit 3002 pointing towards the base body 3001. The gas receiving unit seal 3025 is designed as an O-ring, for example. In addition, the gas receiving unit seal 3025 is arranged in a sealing manner on the inner wall 3026 of the first receiving unit 3002.

[0251] The sliding unit 3007 has a first sealing device 3029 and a second sealing device 3030. The first sealing device 3029 and the second sealing device 3030 are designed as O-rings. The sliding unit 3007 has an outer side 3031 that points towards the inner wall 3015 of the second receiving unit 3003. The first sealing device 3029 and the second sealing device 3030 are arranged on the outer side 3031 of the sliding unit 3007 for sealing connection with the inner wall 3015 of the second receiving unit 3003.

[0252] A heating device 3032 is arranged on the second receiving unit 3003, within the range of the sliding unit 3007. The heating device 3032 is designed, for example, as a heating wire or a heating resistor. However, the present invention is not limited to the above-described embodiment. Rather, any heating device suitable for use in the present invention can be used as the heating device 3032. Furthermore, a temperature measuring device in the form of a temperature sensor 3033 is arranged on the second receiving unit 3003, within the range of the sliding unit 3007. The temperature sensor 3033 is designed, for example, as a semiconductor temperature sensor. However, the present invention is not limited to using such a temperature sensor. Rather, any temperature sensor suitable for use in the present invention can be used as the temperature sensor. The arrangement of the heating device 3032 and the temperature sensor 3033 ensures that the sliding unit 3007, the first base opening 3011, and / or the second base opening 3012 can be designed to be slightly hotter than the first receiving unit 3002 having the gas receiving unit 3004. For example, the sliding unit 3007, the first base opening 3011, and / or the second base opening 3012 are approximately 1°C to 3°C hotter than the first receiving unit 3002 having the gas receiving unit 3004. This prevents the gas from condensing on the outside of the gas receiving unit 3004 (e.g., at the sliding unit 3007 and / or the closing unit 3006) when the gas receiving unit 3004 is opened.

[0253] The first receiving unit 3002 has a releasable closure device 3034. The releasable closure device 3034 is operatively connected to the gas receiving unit 3004, such that the gas receiving unit 3004 is disposed on the inner wall 3026 of the first receiving unit 3002. The releasable closure device 3034 can, for example, be screwed into and / or inserted into the first receiving unit 3002. Here, the releasable closure device 3034 acts on the gas receiving unit 3004 in such a way that it presses the gas receiving unit 3004 against the inner wall 3026 of the first receiving unit 3002, thereby sealingly abutting the gas receiving unit 3004 against the inner wall 3026 of the first receiving unit 3002.

[0254] Gas receiving unit 3004 is arranged in a replaceable manner in first receiving unit 3002. Therefore, it is possible to arrange different gas receiving units 3004 having the same or different precursors 3035 in first receiving unit 3002. To replace gas receiving unit 3004, firstly, the sealing device 3034 is detached from first receiving unit 3002. For example, the sealing device 3034 is unscrewed from first receiving unit 3002. Then, the gas receiving unit 3004 located in first receiving unit 3002 is removed from first receiving unit 3002. Then, a new gas receiving unit 3004 having the precursor 3035 is inserted into first receiving unit 3002. Then, the sealing device 3034 is placed back into first receiving unit 3002, for example, by screwing it into first receiving unit 3002. Here, the releasable sealing device 3034 acts on the gas receiving unit 3004 in such a way that it presses the gas receiving unit 3004 against the inner wall 3026 of the first receiving unit 3002, thereby sealing the gas receiving unit 3004 against the inner wall 3026 of the first receiving unit 3002.

[0255] On the one hand, the gas reservoir 3000 ensures that gas (e.g., a gaseous precursor) can flow from the gas receiving unit 3004 through the second main body opening 3012 into the guiding device for supplying gas to the object 125. On the other hand, it has been shown that the heat flow inside the gas reservoir 3000 is maintained and the gas temperature does not change or does not change significantly. If changes occur, these changes are, for example, within ±3°C or ±5°C of the desired temperature. Fluctuations in the desired temperature do not affect, or only minimally affect, the heat flow inside the gas reservoir 3000. Therefore, the design of the gas reservoir 3000 ensures that the temperature of the gas (especially the precursor 3035) does not change or does not change significantly when the gas reservoir 3000 is opened or closed.

[0256] The features of the invention disclosed in this specification, the accompanying drawings, and the claims are important individually and in any combination for implementing the invention in its various embodiments. The invention is not limited to the described embodiments. The invention can be modified within the scope of the claims and taking into account the knowledge of those skilled in the art.

[0257] List of reference numerals 100 SEM

[0258] 101 Electronic Source

[0259] 102 Extraction Electrode

[0260] 103 Anode

[0261] 104 Beam Guide Tube

[0262] 105 First converging lens

[0263] 106 Second converging lens

[0264] 107 First Objective

[0265] 108 First baffle unit

[0266] 108A First baffle opening

[0267] 109 Second baffle unit

[0268] 110 Extreme Boots

[0269] 111 coil

[0270] 112 Individual electrodes

[0271] 113 Tubular electrode

[0272] 114 Object Holder

[0273] 115 Scanning Device

[0274] 116 First Detector

[0275] 116A Reverse Field Grille

[0276] 117 Second Detector

[0277] 118 Second baffle opening

[0278] 119 Sample Chamber Detector

[0279] 120 Sample Room

[0280] 121 Third Detector

[0281] 122 Sample Stage 123 Control unit with processor 124 monitor

[0282] 125 objects

[0283] 126 Database

[0284] 127 First Pump

[0285] 128 Pump Pipeline

[0286] 129 Second Pump

[0287] 130 Exports

[0288] 200 combined equipment

[0289] Sample Room 201

[0290] 300 Ionization Radiation Equipment

[0291] 301 Ion Beam Generator

[0292] Extraction electrode in 302 ionization radiation equipment

[0293] 303 Converging Lens

[0294] 304 Second Objective

[0295] 306 Adjustable or selectable baffle

[0296] 307 First Electrode Assembly

[0297] 308 Second Electrode Assembly

[0298] 400 Particle radiation equipment with a corrector unit

[0299] 401 Particle Radiation Column

[0300] 402 Electronic Source

[0301] 403 Extraction Electrode

[0302] 404 anode

[0303] 405 First electrostatic lens

[0304] 406 Second electrostatic lens

[0305] 407 Third Electrostatic Lens

[0306] 408 Magnetic Deflection Unit

[0307] 409 First Electrostatic Beam Deflection Unit

[0308] 409A First Multipole Unit

[0309] 409B Second Multipole Unit

[0310] 410 Beam deflection device

[0311] 411A First Magnetic Sector

[0312] 411B Second Magnetic Sector

[0313] 411C Third Magnetic Sector

[0314] 411D Fourth Magnetic Sector

[0315] 411E Fifth Magnetic Sector

[0316] 411F Sixth Magnetic Sector

[0317] 411G Seventh Magnetic Sector

[0318] 413A First Reflecting Mirror Electrode

[0319] 413B Second Reflector Electrode

[0320] 413C Third Reflector Electrode

[0321] 414 Electrostatic reflector

[0322] 415 Fourth electrostatic lens

[0323] 416 Second Electrostatic Beam Deflection Unit

[0324] 416A Third Multipole Unit

[0325] 416B Fourth Multipole Unit

[0326] 417 Third Electrostatic Beam Deflection Unit

[0327] 418 Fifth electrostatic lens

[0328] 418A Fifth Multipole Unit

[0329] 418B Sixth Multipole Unit

[0330] 419 First Analysis Detector

[0331] 420 beam guide tube

[0332] 421 Objective lens

[0333] 422 Magnetic Lens

[0334] 423 Sixth Electrostatic Lens

[0335] 424 Sample Stage

[0336] 425 objects

[0337] Sample Room 426

[0338] 427 Detect beam path

[0339] 428 Second Analysis Detector

[0340] 429 Scanning device

[0341] 432 Other magnetic deflection elements

[0342] 500 radiation detector

[0343] 709 First Beam Axis

[0344] 710 Second beam axis

[0345] 1000 Gas Supply Unit

[0346] Supply Unit 1001

[0347] 1002 First Precursor Storage

[0348] 1003 Second Precursor Storage

[0349] 1004 Third Precursor Storage

[0350] 1005 Control Valve

[0351] 1006 Cleaning Pipeline

[0352] 1007 First Cleaning Pipeline Unit

[0353] 1008 Second Cleaning Pipeline Unit

[0354] 1009 pipeline

[0355] 1010 Pump outlet pipeline

[0356] 1011 First heating and / or cooling device

[0357] 1012 Second heating and / or cooling device

[0358] 1013 Fifth heating and / or cooling device

[0359] 1014 Third heating and / or cooling device

[0360] 1015 Fourth heating and / or cooling device

[0361] 1016 Heating and / or cooling unit

[0362] 1017 First Coil

[0363] 1018 First Valve Body

[0364] 1019 Second Coil

[0365] 1020 Second Valve Body

[0366] 1021 Third Coil

[0367] 1022 Third Valve Body

[0368] 1023 Connecting Section

[0369] 1024 movable units

[0370] 1025 First end section

[0371] 1026 Second end section

[0372] 1027 Shielding Section

[0373] 1028 Sealing Unit

[0374] 2000 A system with a gas supply device and a gas supply unit

[0375] 2001 Gas Supply Unit

[0376] 2002 Sealing Part

[0377] 2003 First heating and / or cooling element

[0378] 2004 Second heating and / or cooling element

[0379] 2005A First Guiding Device First Connecting Unit

[0380] 2005B Second Guiding Device First Connecting Unit

[0381] 2006A First Guiding Device Second Plug-in Unit

[0382] 2006B Second guide device second plug-in unit

[0383] 2007 matrix

[0384] 2008 Temperature Sensor

[0385] 2009 Third heating and / or cooling element

[0386] 2010A First plug-in connection device

[0387] 2010B Second Plug-in Connection Device

[0388] 3000 Gas Storage Unit

[0389] 3001 basic elements

[0390] 3002 First Reception Unit

[0391] 3003 Second Reception Unit

[0392] 3004 Gas Receiving Unit

[0393] 3005 Gas outlet opening

[0394] 3006 Movable Enclosed Unit

[0395] 3007 Sliding Unit

[0396] 3008 Sliding Unit Guide Device

[0397] 3009 First Opening

[0398] 3010 Second Opening

[0399] 3011 First Basic Body Opening

[0400] 3012 Second Basic Opening

[0401] 3013 Actuator

[0402] 3014 Isolation Body

[0403] 3015 Inner Wall

[0404] 3016 Spring Unit

[0405] 3017 side view

[0406] 3018 Protrusion

[0407] 3019 Interior Space

[0408] 3020 First end

[0409] 3021 Second end

[0410] 3022 Enclosed Unit Seal

[0411] 3023 Inner wall of the gas receiving unit

[0412] 3024 Outer side

[0413] 3025 Gas receiving unit seal

[0414] 3026 Inner wall of the first receiving unit

[0415] 3027 Side of the sliding unit

[0416] 3028 Sliding Unit Seal

[0417] 3029 First sealing device

[0418] 3030 Second sealing device

[0419] 3031 Outer side of sliding unit

[0420] 3032 Heating Device

[0421] 3033 Temperature Sensor

[0422] 3034 Sealing Device

[0423] 3035 precursor

[0424] 3036 Second Interior Space

[0425] 3037 First Interior Space

[0426] L1 First Guiding Device

[0427] L2 Second Guiding Device

[0428] L3 Third Guiding Device

[0429] L4 Fourth Guiding Device

[0430] L7 Seventh Guiding Device

[0431] L8 Eighth Guiding Device

[0432] L9 Ninth Guiding Device

[0433] OA optical axis

[0434] OA1 First Optical Axis

[0435] OA2 Second Optical Axis

[0436] OA3 Third Optical Axis

[0437] V1 First Valve

[0438] V2 Second Valve

[0439] V3 Third Valve

[0440] V4 Fourth Valve

[0441] V5 Fifth Valve

[0442] V6 Sixth Valve

[0443] V7 Seventh Valve

[0444] V8 Eighth Valve

[0445] V9 Ninth Valve

[0446] V10 Tenth Valve

[0447] V11 Eleventh Valve

[0448] V12 Twelfth Valve

[0449] V13 Thirteenth Valve

Claims

1. A gas supply device (1000), the gas supply device comprising: - At least one first precursor storage device for receiving the first precursor; -At least one second precursor storage for receiving the second precursor; - Supply unit (1001) for supplying a first precursor in a gaseous state and / or a second precursor in a gaseous state to the surface of an object (125, 425); - At least one first guiding device for guiding the gaseous first precursor to the supply unit (1001), wherein the first guiding device is arranged between the first precursor reservoir and the supply unit (1001); - At least one second guiding device for guiding the gaseous second precursor to the supply unit (1001), wherein the second guiding device is arranged between the second precursor reservoir and the supply unit (1001); - At least one first valve for controlling the flow rate of the gaseous first precursor, wherein the first valve is arranged between the first guiding device and the supply unit (1001); - At least one second valve for controlling the flow rate of the gaseous second precursor, wherein the second valve is arranged between the second guide device and the supply unit (1001); - At least one third valve for controlling the flow rate of the gaseous first precursor, wherein the third valve is arranged between the first guiding device and the first precursor reservoir; - At least one fourth valve for controlling the flow rate of the gaseous second precursor, wherein the fourth valve is arranged between the second guide device and the second precursor reservoir; as well as - At least one control valve (1005) for controlling the flow rate of the first precursor in the gaseous state and / or the second precursor in the gaseous state to the supply unit (1001), in -The control valve (1005) is connected to the first valve via a third guiding device; - The control valve (1005) is connected to the second valve via a fourth guiding device; - The control valve (1005) is arranged between the first valve and the supply unit (1001); - The control valve (1005) is arranged between the second valve and the supply unit (1001); and wherein The control valve (1005) is connected to the supply unit (1001) for supplying the first precursor of the gaseous state and / or the second precursor of the gaseous state.

2. The gas supply device (1000) according to claim 1, wherein, viewed from the first precursor reservoir in the flow direction from the first precursor in the gaseous state to the supply unit (1001), the third valve is arranged first and then the first valve is arranged along the first guide device.

3. The gas supply device (1000) according to claim 1 or 2, wherein, viewed from the second precursor reservoir in the flow direction from the second precursor in the gaseous state to the supply unit (1001), the fourth valve is arranged first and then the second valve is arranged along the second guide device.

4. The gas supply device (1000) according to claim 1 or 2, wherein the gas supply device (1000) has at least one of the following features: (i) The first valve is designed as a miniature valve; (ii) The second valve is designed as a miniature valve; (iii) The control valve (1005) is designed as a miniature valve; (iv) The first valve is designed as a pulse valve; (v) The second valve is designed as a pulse valve; (vi) The control valve (1005) is designed as a pulse valve.

5. The gas supply device (1000) according to claim 1 or 2, wherein the gas supply device (1000) has the following characteristics: - At least one cleaning line (1006) for supplying cleaning gas, wherein the cleaning line (1006) is arranged between a fifth valve (V5) for controlling the flow rate of the cleaning gas and the control valve (1005); - At least one sixth valve (V6) for controlling the flow rate of the cleaning gas, wherein the fifth valve (V5) is arranged first and then the sixth valve (V6) is arranged in the direction of flow of the cleaning gas along the cleaning line (1006).

6. The gas supply device (1000) according to claim 5, wherein the gas supply device has at least one of the following features: (i) at least one first cleaning line device (1007) for guiding the cleaning gas into the cleaning line (1006), wherein the first cleaning line device (1007) is arranged between the fifth valve (V5) and the seventh valve (V7) for controlling the flow rate of the cleaning gas. (ii) at least one second cleaning line device (1008) for guiding the cleaning gas into the cleaning line (1006), wherein the second cleaning line device (1008) is arranged between the fifth valve (V5) and the eighth valve (V8) for controlling the flow rate of the cleaning gas.

7. The gas supply device (1000) according to claim 5, wherein the gas supply device (1000) has at least one of the following features: (i) The fifth valve (V5) is designed as a needle valve; (ii) The sixth valve (V6) is designed as a miniature valve; (iii) The sixth valve (V6) is designed as a pulse valve.

8. The gas supply device (1000) according to claim 5, wherein the gas supply device (1000) has a heating and / or cooling unit (1016) for heating and / or cooling the sixth valve (V6).

9. The gas supply device (1000) according to claim 1 or 2, wherein the gas supply device (1000) has at least one of the following features: (i) A first heating and / or cooling device for heating and / or cooling the first precursor reservoir; (ii) a second heating and / or cooling device for heating and / or cooling the second precursor reservoir; (iii) A third heating and / or cooling device (1014) for heating and / or cooling the first guiding device, the second guiding device, the third valve and the fourth valve; (iv) A fourth heating and / or cooling device (1015) for heating and / or cooling the first valve, the second valve, the control valve (1005) and the supply unit (1001).

10. A particle radiation device (100, 200, 400) for imaging, analyzing, and / or processing an object (125, 425), said particle radiation device having - At least one beam generator (101, 301, 402) for generating a particle beam with charged particles; - At least one objective lens (107, 304, 421) for focusing the particle beam onto the object (125, 425); - At least one object chamber (120, 201, 426) for arranging the object (125, 425) in the particle radiation device (100, 200, 400); - At least one detector (116, 117, 119, 121, 419, 428, 500) for detecting interacting particles and / or interacting radiation generated during the interaction of the particle beam with the object (125, 425); and - At least one gas supply device (1000) according to any one of the preceding claims.

11. The particle radiation device (200) according to claim 10, wherein the beam generator (101) is designed as a first beam generator, wherein the particle beam is designed as a first particle beam having a first charged particle, wherein the objective lens (107) is designed as a first objective lens for focusing the first particle beam onto the object (125), and wherein the particle radiation device (200) further comprises: - At least one second beam generator (301) for generating a second particle beam having a second charged particle; and - At least one second objective lens (304) for focusing the second particle beam onto the object (125).

12. The particle radiation device (100, 200, 400) according to claim 10 or 11, wherein the particle radiation device (100, 200, 400) is an electron radiation device and / or an ion radiation device.

13. A method for operating a gas supply device (1000) according to any one of claims 5 to 8, said method having at least one of the following features: (i) Using the gas supply device (1000) to supply a single precursor in a gaseous state to an object (125, 425); (ii) Using the gas supply device (1000) to supply a single precursor in a gaseous state to an object (125, 425), wherein the first valve and / or the second valve and / or the control valve (1005) are operated in a pulsed manner; (iii) Using the gas supply device (1000) to supply a plurality of gaseous precursors to an object (125, 425), wherein the first valve and / or the second valve are operated in a pulsed manner such that either the first gaseous precursor or the second gaseous precursor is supplied to the object (125, 425). (iv) Using the gas supply device (1000) to clean at least one guide device of the gas supply device (1000), wherein for this purpose the control valve (1005) is closed, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is opened; (v) Using the gas supply device (1000) to clean at least one guide device of the gas supply device (1000), wherein for this purpose the control valve (1005) is closed, wherein the fifth valve (V5) is opened, wherein the sixth valve (V6) is operated in a pulse manner, and wherein the first valve and / or the second valve is opened; (vi) Using the gas supply device (1000) to clean at least one guide device of the gas supply device (1000), wherein for this purpose the control valve (1005) is closed, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is operated in a pulse manner; (vii) The gas supply device (1000) is used to clean the supply unit (1001), wherein the control valve (1005) is opened for this purpose, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is closed; (viii) The gas supply device (1000) is used to clean the supply unit (1001), wherein the control valve (1005) is opened for this purpose, wherein the fifth valve (V5) is opened, wherein the sixth valve (V6) is operated in a pulse manner, and wherein the first valve and / or the second valve is closed; (ix) The gas supply device (1000) is used to clean the supply unit (1001), wherein the control valve (1005) is operated in a pulse manner for this purpose, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is closed; (x) Using the gas supply device (1000) to compensate for the load on the object (125, 425), wherein for this purpose the control valve (1005) is opened, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is closed; (xi) The gas supply device (1000) is used to compensate for the load on the object (125, 425), wherein the control valve (1005) is opened for this purpose, wherein the fifth valve (V5) is opened, wherein the sixth valve (V6) is operated in a pulsed manner, and wherein the first valve and / or the second valve is closed.

14. A computer program product having program code, said program code being loadable into a processor of a gas supply device (1000) according to any one of claims 1 to 9, and said program code controlling said gas supply device (1000) when executed, in such a way that the method according to claim 13 is performed.

15. A method for operating a particle radiation device (100, 200, 400) according to any one of claims 10 to 12, wherein the gas supply device (1000) of the particle radiation device (100, 200, 400) comprises a fifth valve for controlling the flow rate of a cleaning gas and at least one sixth valve for controlling the flow rate of the cleaning gas, the method having one of the following features: (i) Using the gas supply device (1000) of the particle radiation device (100, 200, 400) to supply a single precursor in a gaseous state to the object (125, 425); (ii) Using the gas supply device (1000) of the particle radiation device (100, 200, 400) to supply a single precursor in a gaseous state to an object (125, 425), wherein the first valve and / or the second valve and / or the control valve (1005) are operated in a pulsed manner; (iii) Using the gas supply device (1000) of the particle radiation device (100, 200, 400) to supply a plurality of gaseous precursors to an object (125, 425), wherein the first valve and / or the second valve are operated in a pulsed manner such that either the first gaseous precursor or the second gaseous precursor is supplied to the object (125, 425). (iv) Cleaning at least one guide device of the gas supply device (1000) of the particle radiation device (100, 200, 400) using the gas supply device (1000), wherein the control valve (1005) is closed for this purpose, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is opened; (v) Cleaning at least one guide device of the gas supply device (1000) of the particle radiation device (100, 200, 400) using the gas supply device (1000), wherein for this purpose the control valve (1005) is closed, wherein the fifth valve (V5) is opened, wherein the sixth valve (V6) is operated in a pulsed manner, and wherein the first valve and / or the second valve is opened; (vi) Cleaning at least one guide device of the gas supply device (1000) of the particle radiation device (100, 200, 400) using the gas supply device (1000), wherein the control valve (1005) is closed for this purpose, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is operated in a pulsed manner; (vii) The gas supply device (1000) of the particle radiation device (100, 200, 400) is used to clean the supply unit (1001), wherein the control valve (1005) is opened for this purpose, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is closed; (viii) Cleaning the supply unit (1001) using the gas supply device (1000) of the particle radiation device (100, 200, 400), wherein for this purpose the control valve (1005) is opened, wherein the fifth valve (V5) is opened, wherein the sixth valve (V6) is operated in a pulsed manner, and wherein the first valve and / or the second valve is closed; (ix) The gas supply device (1000) of the particle radiation device (100, 200, 400) is used to clean the supply unit (1001), wherein the control valve (1005) is operated in a pulsed manner for this purpose, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is closed; (x) Using the gas supply device (1000) of the particle radiation device (100, 200, 400) to compensate for the load on the object (125, 425), wherein for this purpose the control valve (1005) is opened, wherein the fifth valve (V5) and the sixth valve (V6) are opened, and wherein the first valve and / or the second valve is closed; (xi) The gas supply device (1000) of the particle radiation device (100, 200, 400) is used to compensate for the load on the object (125, 425), wherein the control valve (1005) is opened for this purpose, wherein the fifth valve (V5) is opened, wherein the sixth valve (V6) is operated in a pulsed manner, and wherein the first valve and / or the second valve is closed.

16. A computer program product having program code, said program code being loadable into a processor of a particle radiation device (100, 200, 400) according to any one of claims 10 to 12, and said program code, when executed, controlling said particle radiation device (100, 200, 400) in such a way as to cause the method according to claim 15 to be performed.

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