Optoelectronic sensor assembly and electronic device

Abstract

The embodiment of the present disclosure provides an optoelectronic sensor assembly and an electronic device. The optoelectronic sensor assembly comprises a substrate, at least one optoelectronic sensor group located on one side of the substrate; the optoelectronic sensor group comprises at least two optoelectronic sensors, the optoelectronic sensor comprises a channel region, the colors of light received by the at least two optoelectronic sensors are different, and the sizes of the channel regions of the at least two optoelectronic sensors are different.

Description

Technical Field

[0001] This disclosure relates to, but is not limited to, the field of display technology, and in particular to a photoelectric sensor assembly and electronic device. Background Technology

[0002] With AI (Artificial Intelligence) ， The widespread application of artificial intelligence (AI) technology in mobile display products necessitates customizing applications for specific user environments to enhance the user experience in diverse settings. With this increasing prevalence, we need to understand not only brightness information but also ambient color temperature and other factors to provide a better overall user experience. Summary of the Invention

[0003] The following is an overview of the subject matter described in detail herein. This overview is not intended to limit the scope of the claims.

[0004] This disclosure provides a photoelectric sensor assembly. The photoelectric sensor assembly includes:

[0005] substrate;

[0006] At least one photoelectric sensor group located on one side of the substrate; the photoelectric sensor group includes at least two photoelectric sensors, each photoelectric sensor including a channel region, the at least two photoelectric sensors receiving light of different colors, and the channel regions of the at least two photoelectric sensors having different sizes.

[0007] In some illustrative embodiments, the photoelectric sensor further includes a first doped region and a second doped region; the first doped region and the second doped region are located on opposite sides of the channel region in a first direction, and at least one of the length of the channel region in the first direction, the length in the second direction, and the thickness of the at least two photoelectric sensors is different;

[0008] The first direction is different from the second direction, and the plane formed by the first direction and the second direction is parallel to the plane on which the substrate is located.

[0009] In some illustrative embodiments, the photoelectric sensor group includes a first photoelectric sensor that receives light of a first color, a second photoelectric sensor that receives light of a second color, a third photoelectric sensor that receives light of a third color, and a fourth photoelectric sensor that receives light of a fourth color.

[0010] The photoelectric sensor assembly further includes a photoresist layer located on the side of the photoelectric sensor assembly away from the substrate; the photoresist layer includes a light-transmitting pattern, a first photoresist pattern, a second photoresist pattern, and a third photoresist pattern. The light-transmitting pattern overlaps with the orthographic projection of the first photoelectric sensor on the substrate, the first photoresist pattern overlaps with the orthographic projection of the second photoelectric sensor on the substrate, the second photoresist pattern overlaps with the orthographic projection of the third photoelectric sensor on the substrate, and the third photoresist pattern overlaps with the orthographic projection of the fourth photoelectric sensor on the substrate. The first color light is light transmitted through the entire visible light spectrum; the second color light is light transmitted through the first photoresist pattern; the third color light is light transmitted through the second photoresist pattern; and the fourth color light is light transmitted through the third photoresist pattern.

[0011] In some illustrative embodiments, the first photoelectric sensor includes a first channel region, the second photoelectric sensor includes a second channel region, the third photoelectric sensor includes a third channel region, the fourth photoelectric sensor includes a fourth channel region, and the thickness H of the first channel region is... W The thickness H of the second channel region R The thickness H of the third channel region G and the thickness H of the fourth channel region B Similarly, the length L of the first channel region in the first direction W The length L of the second channel region in the first direction R The length L of the third channel region in the first direction G and the length L of the fourth channel region in the first direction B Similarly, the length W of the first channel region in the second direction W The length W of the second channel region in the second direction R The length W of the third channel region in the second direction G and the length W of the fourth channel region in the second direction B At least two of them are different.

[0012] In some illustrative embodiments, the formula W is satisfied. W ×T W ×EQE W / S=W R ×T R ×EQE R / S=W G ×T G ×EQE G / S=W B ×T B ×EQE B / S;

[0013] Among them, T W T represents the transmittance of the light-transmitting pattern. R T represents the transmittance of the first photoresist pattern. G T represents the transmittance of the second photoresist pattern. B For the transmittance of the third photoresist pattern, EQE W / S represents the spectral excitation conversion efficiency per unit area of ​​the first channel region, EQE R / S represents the spectral excitation conversion efficiency per unit area of ​​the second channel region, EQE G / S represents the spectral excitation conversion efficiency per unit area of ​​the third channel region; EQE B / S represents the spectral excitation conversion efficiency per unit area through the fourth channel region.

[0014] In some illustrative embodiments, the formula W is satisfied. W ×EQE W =W R ×EQE R =W G ×EQE G =W B ×EQE B ;

[0015] Among them, EQE W For the spectral excitation conversion efficiency of the first channel region, EQE R For the spectral excitation conversion efficiency of the second channel region, EQE G The spectral excitation conversion efficiency of the third channel region; EQE B The spectral excitation conversion efficiency is the fourth channel region.

[0016] In some illustrative embodiments, the first photoelectric sensor includes a first channel region, the second photoelectric sensor includes a second channel region, the third photoelectric sensor includes a third channel region, and the fourth photoelectric sensor includes a fourth channel region, wherein the length L of the first channel region in a first direction is... W The length L of the second channel region in the first direction R The length L of the third channel region in the first direction G and the length L of the fourth channel region in the first direction B Similarly, the length W of the first channel region in the second direction W The length W of the second channel region in the second direction R The length W of the third channel region in the second direction G and the length W of the fourth channel region in the second direction B Similarly, the thickness H of the first channel region W The thickness H of the second channel region RThe thickness H of the third channel region G and the thickness H of the fourth channel region B At least two of them are different.

[0017] In some illustrative embodiments, the formula T is satisfied. W ×EQE W / S(H W ) = T R ×EQE R / S(H R ) = T G ×EQE G / S(H G ) = T B ×EQE B / S(H B );

[0018] Among them, T W T represents the transmittance of the light-transmitting pattern. R T represents the transmittance of the first photoresist pattern. G T represents the transmittance of the second photoresist pattern. B For the transmittance of the third photoresist pattern, EQE W / S(H W The thickness of the first channel region is H. W Spectral excitation conversion efficiency per unit area; EQE R / S(H R The thickness of the second channel region is H. R Spectral excitation conversion efficiency per unit area; EQE G / S(H G The thickness of the third channel region is H. G Spectral excitation conversion efficiency per unit area; EQE B / S(H B The thickness of the fourth channel region is H. B The spectral excitation conversion efficiency per unit area.

[0019] In some illustrative embodiments, the formula EQE is satisfied. W (H W )=EQE R (H R )=EQE G (H G )=EQE B (H B );

[0020] Among them, EQE W (H W The thickness of the first channel region is H. W Spectral excitation conversion efficiency; EQER (H R The thickness of the second channel region is H. R Spectral excitation conversion efficiency; EQE G (H G The thickness of the third channel region is H. G Spectral excitation conversion efficiency; EQE B (H B The thickness of the fourth channel region is H. B Spectral excitation conversion efficiency.

[0021] In some illustrative embodiments, the photoelectric sensor assembly further includes a first electrode and a second electrode located on the side of the photoelectric sensor away from the substrate, wherein the first electrode is connected to the first doped region and the second electrode is connected to the second doped region.

[0022] In some illustrative embodiments, the photoelectric sensor assembly further includes an insulating layer located between the channel region and the photoresist layer.

[0023] This disclosure provides an electronic device. The electronic device includes the photoelectric sensor assembly described in any of the above embodiments.

[0024] The photoelectric sensor assembly provided in this disclosure has a differentiated design for the channel regions of at least two photoelectric sensors to compensate for the differences caused by the conversion efficiency of different photoelectric sensors, so that at least some of the photoelectric sensors in the photoelectric sensor group output signal strengths that are substantially the same.

[0025] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description

[0026] The accompanying drawings are provided to further illustrate the technical solutions of this disclosure and form part of the specification. They are used together with the embodiments of this disclosure to explain the technical solutions of this disclosure and do not constitute a limitation on the technical solutions of this disclosure. The shapes and sizes of the components in the drawings do not reflect actual proportions and are only intended to illustrate the content of this disclosure.

[0027] Figure 1 This is a top view schematic diagram of a photoelectric sensor assembly;

[0028] Figure 2 for Figure 1 The cross-sectional view of the photoelectric sensor assembly shown at point A;

[0029] Figure 3 for Figure 2 The photoelectric sensor assembly shown is a phototransmittance curve of the photomask.

[0030] Figure 4This is a top view schematic diagram of the photoelectric sensor assembly in the embodiments of this disclosure;

[0031] Figure 5 for Figure 4 The cross-sectional view of the photoelectric sensor assembly shown at point B;

[0032] Figure 6 This is a top view schematic diagram of a photoelectric sensor assembly according to another embodiment of the present disclosure;

[0033] Figure 7 for Figure 6 The cross-sectional view of the photoelectric sensor assembly shown at point C;

[0034] Figure 8 This is a schematic diagram of the spectral conversion efficiency curve of the photoelectric sensor component in the embodiments of this disclosure;

[0035] Figure 9 This is a graph showing the output signal strength of a photoelectric sensor component.

[0036] Figure 10 This is a graph showing the output signal strength of the photoelectric sensor assembly in the embodiments of this disclosure. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The implementation can be carried out in many different forms. Those skilled in the art will readily understand that the methods and content can be transformed into one or more forms without departing from the spirit and scope of this disclosure. Therefore, this disclosure should not be construed as limited to the content described in the following embodiments. Without conflict, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0038] In the accompanying drawings, the size of one or more constituent elements, the thickness of layers, or areas are sometimes exaggerated for clarity. Therefore, this disclosure is not necessarily limited to these dimensions, and the shapes and sizes of the components in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate ideal examples, and this disclosure is not limited to the shapes or values ​​shown in the drawings.

[0039] The ordinal numbers such as "first," "second," and "third" in this disclosure are used to avoid confusion among the constituent elements, not to limit the quantity. "Multiple" in this disclosure includes two or more quantities.

[0040] In this disclosure, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification of the specification, and does not imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this disclosure. The positional relationships of the constituent elements may be appropriately changed depending on the direction in which the constituent elements are described. Therefore, the description is not limited to the terms used in the specification and may be appropriately replaced as appropriate.

[0041] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linkage" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or a link; they can refer to a direct connection, an indirect connection via an intermediate component, or a connection within two components. Those skilled in the art will understand the meaning of these terms in this disclosure as appropriate.

[0042] In this disclosure, a transistor is a device that includes at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between the drain electrode (drain electrode terminal, drain region, or drain) and the source electrode (source electrode terminal, source region, or source), and current can flow through the drain electrode, the channel region, and the source electrode. In this disclosure, the channel region refers to the region through which current primarily flows.

[0043] In this disclosure, the first electrode can be the drain electrode and the second electrode can be the source electrode, or vice versa. In cases where transistors with opposite polarities are used or the current direction changes during circuit operation, the functions of the "source electrode" and the "drain electrode" are sometimes interchanged. Therefore, in this disclosure, the "source electrode" and the "drain electrode" can be interchanged.

[0044] In this disclosure, "connection" includes the situation where constituent elements are connected together by a component having some electrical function. There are no particular limitations on the "component having some electrical function," as long as it enables the transmission and reception of electrical signals between the connected constituent elements. Examples of "component having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components having one or more functions.

[0045] In this disclosure, "parallel" refers to a state in which two straight lines form an angle of -10° or more and less than 10°, and therefore can include a state in which the angle is -5° or more and less than 5°. Furthermore, "perpendicular" refers to a state in which two straight lines form an angle of 80° or more and less than 10°, and therefore can include a state in which the angle is 85° or more and less than 95°.

[0046] In this disclosure, the terms "film" and "layer" can be interchanged. For example, sometimes "conductive layer" can be replaced with "conductive film". Similarly, sometimes "insulating film" can be replaced with "insulating layer".

[0047] In this disclosure, “about” means a value that is not strictly limited and allows for process and measurement errors.

[0048] With the widespread application of AI technology, photoelectric sensors not only need to sense the brightness of ambient light, but also need to sense the color temperature information of ambient light and convert ambient light into the three primary colors of the environment.

[0049] Figure 1 This is a top view schematic diagram of a photoelectric sensor assembly. Figure 1 As shown, the photoelectric sensor assembly 10 includes a white light sensor 101, a red light sensor 102, a green light sensor 103, and a blue light sensor 104.

[0050] Figure 2 for Figure 1 The cross-sectional view of the photoelectric sensor assembly shown at point A. Figure 2As shown, each sensor includes a substrate 105, a photodiode disposed on the substrate 105, and a photoresist layer disposed on the side of the photodiode away from the substrate 105. Specifically, the white light sensor 101 includes a first photodiode 1061 and a first photoresist layer 107. The first photoresist layer 107 is a transparent thin film and is configured to allow all visible light to be transmitted to the first photodiode 1061. The red light sensor 102 includes a second photodiode 1062 and a second photoresist layer 108. The second photoresist layer 108 is configured to allow only visible light in the red band to be transmitted to the second photodiode 1062, blocking visible light other than the red band from being transmitted, so that the second photodiode 1062 can only sense red light information in ambient light. The green light sensor 103 includes a third photodiode 1062 and a second photoresist layer 108. The photodiode 1063 and the third photoresist layer 109 are configured to allow only visible light in the green band to pass through to the third photodiode 1063, and to block visible light other than the green band from passing through, so that the third photodiode 1063 can only sense green light information in ambient light; the blue light sensor 104 includes a fourth photodiode 1064 and a fourth photoresist layer 110, which is configured to allow only visible light in the blue band to pass through to the fourth photodiode 1064, and to block visible light other than the blue band from passing through, so that the fourth photodiode 1064 can only sense blue light information in ambient light.

[0051] The channel length of the photodiode is L (e.g., Figure 2 As shown), the width is W (as shown). Figure 1 As shown), the thickness of the photodiode is H (as shown). Figure 2 (As shown). The photodiode can be a PIN-PD (PIN photodiode). The photodiodes in each photodetector are of the same size, which makes it impossible to compensate for the output differences of the photodetector caused by the different transmittance of the photoresist pattern and the different conversion efficiencies of the photodiode for different wavelengths of the spectrum.

[0052] Figure 3 for Figure 2 The image shows the light transmittance curve of the photoelectric sensor assembly mask. Figure 3 The horizontal axis represents the wavelength of light. The vertical axis represents the transmittance of light. Figure 3 In the diagram, curve B represents the transmittance of light through the fourth photoresist layer 110, curve G represents the transmittance of light through the third photoresist layer 109, and curve R represents the transmittance of light through the second photoresist layer 108. The transmittance of the first photoresist layer 107 is 100%.

[0053] This disclosure provides a photoelectric sensor assembly. The photoelectric sensor assembly includes:

[0054] substrate;

[0055] At least one photoelectric sensor group located on one side of the substrate; the photoelectric sensor group includes at least two photoelectric sensors, each photoelectric sensor including a channel region, the at least two photoelectric sensors receiving light of different colors, and the channel regions of the at least two photoelectric sensors having different sizes.

[0056] The photoelectric sensor assembly in this embodiment of the present disclosure has a differentiated design for the channel regions of at least two photoelectric sensors to compensate for the differences caused by the conversion efficiency of different photoelectric sensors, so that the output signal strength of at least some of the photoelectric sensors in the photoelectric sensor group is substantially the same.

[0057] The technical solutions of the embodiments of this disclosure are described in detail below through examples.

[0058] Figure 4 This is a top view schematic diagram of the photoelectric sensor assembly in an embodiment of this disclosure. Figure 4 As shown, three directions are defined to illustrate the technical solution, with the first direction labeled X, the second direction labeled Y, and the third direction labeled Z (e.g., ...). Figure 5 (As shown). The first direction, the second direction, and the third direction intersect. In this embodiment, the first direction, the second direction, and the third direction are mutually perpendicular. The third direction (Z) is the thickness direction of the photoelectric sensor assembly 20.

[0059] like Figure 4 As shown, the photoelectric sensor assembly 20 may include a substrate 201, a photoelectric sensor group disposed on the substrate 201, and a photoresist layer located on the side of the photoelectric sensor group away from the substrate; the photoelectric sensor group includes at least two photoelectric sensors, each photoelectric sensor including a channel region 203 disposed on the substrate 201, the at least two photoelectric sensors receiving light of different colors, and the at least two photoelectric sensors having different sizes of channel regions.

[0060] In an exemplary embodiment, the photoresist layer and the photoelectric sensor overlap on the orthographic projection of the substrate 201. The photoresist layer can filter light to allow light of a specific wavelength to be incident on the photoelectric sensor.

[0061] In an exemplary embodiment, the plane formed by XY is parallel to the plane containing the substrate 201. The orthographic projection of the substrate 201 onto the plane formed by XY can be rectangular.

[0062] In an exemplary embodiment, substrate 201 can be used as a carrier for other components of the photoelectric sensor assembly 20 besides substrate 201. The material of substrate 201 can be soda-lime glass, quartz glass, sapphire, etc. For example, substrate 201 can be a silicon substrate commonly used in the semiconductor manufacturing field; this silicon substrate can be a silicon substrate that has not undergone semiconductor processing or a silicon substrate that has undergone semiconductor processing. For example, silicon substrates processed by processes such as ion implantation, etching, or diffusion, etc. This disclosure does not limit the material of the substrate or the processing technology used on the substrate.

[0063] Figure 5 for Figure 4 The cross-sectional view of the photoelectric sensor assembly shown at point B. Figure 5 As shown, the photoelectric sensor also includes a first doped region 202 and a second doped region 204. The first doped region 202, the channel region 203, and the second doped region 204 constitute a semiconductor junction with a vertical or horizontal structure. In this embodiment, a semiconductor junction with a horizontal structure is taken as an example. That is, the first doped region 202, the channel region 203, and the second doped region 204 in the semiconductor junction can be arranged along a first direction, and the first doped region 202 and the second doped region 204 are located on opposite sides of the channel region 203 in the first direction.

[0064] In an exemplary embodiment, the first doped region 202, the channel region 203, and the second doped region 204 can constitute a PIN photodiode. A PIN photodiode is formed by adding a lightly doped N-type material, called an I (Intrinsic) layer, between highly doped P-type and N-type layers. Due to the light doping, the electron concentration is very low, forming a wide depletion layer after diffusion. PIN photodiodes have lower dark current and stronger light response, resulting in a higher signal-to-noise ratio and higher detection efficiency for the overall sensor.

[0065] In an exemplary embodiment, the photoelectric sensor assembly 20 may further include a first electrode 206 and a second electrode 207 located on the side of the photoelectric sensor away from the substrate 201. The first electrode 206 and the second electrode 207 are arranged in a group. The first electrode 206 is connected to the first doped region 202. The second electrode 207 is connected to the second doped region 204. One of the first electrode 206 and the second electrode 207 may be a positive electrode, and the other may be a negative electrode.

[0066] In an exemplary embodiment, both the first electrode 206 and the second electrode 207 can be made of metallic materials or transparent conductive materials. The metallic materials can include any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo). Alternatively, both the first electrode 206 and the second electrode 207 can be alloys of metallic materials such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo). The transparent conductive materials can include indium tin oxide (ITO) or indium zinc oxide (IZO), etc.

[0067] In an exemplary embodiment, both the first electrode 206 and the second electrode 207 can be a single-layer structure or a multi-layer composite structure, such as Mo / Cu / Mo or ITO / Al / ITO.

[0068] In one exemplary embodiment, such as Figure 5 As shown, the photoelectric sensor assembly 20 may further include an insulating layer 205 located between the channel region 203 and the first electrode 206 and the second electrode 207. The insulating layer 205 covers the first doped region 202, the channel region 203, and the second doped region 204. The insulating layer 205 is provided with a first through-hole and a second through-hole. The first electrode 206 is connected to the first doped region 202 through the first through-hole. The second electrode 207 is connected to the second doped region 204 through the second through-hole.

[0069] In one exemplary embodiment, the insulating layer 205 may be made of an inorganic material. The inorganic material may include silicon oxynitride (SiO2). x N y It can be any one or more of the following: silicon nitride (SiN), silicon oxide (SiO), silicon dioxide (SiO2), aluminum oxide (Al2O3), titanium dioxide (TiO2), and niobium pentoxide (Nb2O5).

[0070] In an exemplary embodiment, the material of the insulating layer 205 may be an organic material. The organic material may include one or a mixture of polymers such as polyimide (PI), polyacrylate, polyphenylene sulfide, polyarylate, cellulose acetate propionate, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethersulfone resin (PES), polycarbonate (PC), polyetherimide (PEI), cyclic olefin polymer (COP), silicone resin, polyaryl compound (PAR), or glass fiber reinforced plastic (FRP).

[0071] In an exemplary embodiment, the insulating layer 205 may be configured as a single-layer film or a composite film, etc.

[0072] In the embodiments disclosed herein, such as Figure 5As shown, the photoelectric sensor group includes a first photoelectric sensor, a second photoelectric sensor, a third photoelectric sensor, and a fourth photoelectric sensor, which are arranged at intervals along a first direction. The first photoelectric sensor is configured to receive a first color of light. For example, the wavelength of the first color of light may be from 380 nm to 780 nm. The second photoelectric sensor is configured to receive a second color of light. For example, the center wavelength of the second color of light is approximately 650 nm. The third photoelectric sensor is configured to receive a third color of light. For example, the center wavelength of the third color of light is approximately 530 nm. The fourth photoelectric sensor is configured to receive a fourth color of light. For example, the center wavelength of the fourth color of light is approximately 450 nm.

[0073] Figure 5 This disclosure only provides one arrangement of the first, second, third, and fourth photoelectric sensors; it does not limit the arrangement of at least two photoelectric sensors.

[0074] In one exemplary embodiment, such as Figure 5 As shown, the photoresist layer may include multiple photoresist patterns, which overlap with the orthographic projection of the photoelectric sensor onto the substrate 201. The photoresist patterns are configured to allow light of a specific wavelength to be incident on the corresponding photoelectric sensor.

[0075] like Figure 5 As shown, the photoresist layer may include a light-transmitting pattern 208, a first photoresist pattern 209, a second photoresist pattern 210, and a third photoresist pattern 211 arranged sequentially along a first direction.

[0076] In one exemplary embodiment, the light-transmitting pattern 208 is configured to allow light in the visible light band to enter the first photoelectric sensor. The light-transmitting pattern 208 does not filter visible light, so that all visible light enters the first photoelectric sensor. The light-transmitting pattern 208 and the first photoelectric sensor can together constitute a white light sensor.

[0077] In one exemplary embodiment, such as Figure 5 As shown, the orthographic projection of the light-transmitting pattern 208 onto the substrate 201 may at least partially overlap with the orthographic projection of the first photoelectric sensor onto the substrate 201. For example, the orthographic projection of the light-transmitting pattern 208 onto the substrate 201 may cover the orthographic projection of the first photoelectric sensor onto the substrate 201. For example, the orthographic projection of the light-transmitting pattern 208 onto the substrate 201 may overlap with the orthographic projection of the first photoelectric sensor onto the substrate 201, etc.

[0078] In an exemplary embodiment, within the plane defined by XY, the first photoresist pattern 209 overlaps with the orthographic projection of the second photosensitive sensor. The first photoresist pattern 209 is configured to allow red-band light to enter the second photosensitive sensor. The first photoresist pattern can filter light other than red light, so that all red light enters the second photosensitive sensor. The first photoresist pattern 209 and the second photosensitive sensor can together constitute a red light sensor.

[0079] In an exemplary embodiment, the orthographic projection of the first photoresist pattern 209 onto the substrate 201 may cover the orthographic projection of the second photodetector onto the substrate 201. Alternatively, the orthographic projection of the first photoresist pattern 209 onto the substrate 201 may completely overlap with the orthographic projection of the second photodetector onto the substrate 201.

[0080] In an exemplary embodiment, the second photoresist pattern 210 overlaps with the orthographic projection of the third photosensitive sensor in the plane formed by X and Y. The second photoresist pattern 210 is configured to allow light in the green band to be incident on the third photosensitive sensor. The second photoresist pattern 210 can filter light other than green light so that all green light is incident on the third photosensitive sensor. The second photoresist pattern 210 and the third photosensitive sensor can together constitute a green light sensor.

[0081] In an exemplary embodiment, the orthographic projection of the second photoresist pattern 210 onto the substrate 201 may cover the orthographic projection of the third photodetector onto the substrate 201. Alternatively, the orthographic projection of the second photoresist pattern 210 onto the substrate 201 may completely overlap with the orthographic projection of the third photodetector onto the substrate 201.

[0082] In an exemplary embodiment, within the plane defined by X and Y, the third photoresist pattern 211 overlaps with the orthographic projection of the fourth photodetector. The third photoresist pattern 211 is configured to allow blue light to enter the fourth photodetector. The third photoresist pattern 211 can filter light other than blue light, so that all blue light enters the fourth photodetector. The third photoresist pattern 211 and the fourth photodetector can together constitute a blue light sensor.

[0083] In an exemplary embodiment, the orthographic projection of the third photoresist pattern 211 onto the substrate 201 may cover the orthographic projection of the fourth photoelectric sensor onto the substrate 201. Alternatively, the orthographic projection of the third photoresist pattern 211 onto the substrate 201 may completely overlap with the orthographic projection of the fourth photoelectric sensor onto the substrate 201.

[0084] In one exemplary embodiment, at least one of the dimensions of the channel region 203 of at least two photoelectric sensors along a first direction, a second direction, and a third direction is different to achieve a compensation design such that the output signal strengths of at least two photoelectric sensors in the photoelectric sensor group are approximately the same.

[0085] In this embodiment, the channel region 203 included in the first photoelectric sensor is designated as the first channel region. The channel region 203 included in the second photoelectric sensor is designated as the second channel region. The channel region 203 included in the third photoelectric sensor is designated as the third channel region. The channel region 203 included in the fourth photoelectric sensor is designated as the fourth channel region. In this embodiment, the first, second, third, and fourth channel regions are not individually labeled.

[0086] In one exemplary embodiment, such as Figure 5 As shown, the length L of the first channel region in the first direction is... W The length L of the second channel region in the first direction R The length L of the third channel region in the first direction G The length L of the fourth channel region in the first direction B Same. The thickness H of the first channel region. W The thickness H of the second channel region R The thickness H of the third channel region G and the thickness H of the fourth channel region B The same, in Figure 5 The symbol H is used to identify H. W H R H G and H B No separate labeling is provided.

[0087] In one exemplary embodiment, such as Figure 4 As shown, the length W of the first channel region in the second direction W Less than the length W of the third channel region in the second direction G The length W of the third channel region in the second direction G Less than the length W of the second channel region in the second direction R The length W of the second channel region in the second direction R Less than the length W of the fourth channel region in the second direction B .

[0088] In an exemplary embodiment, the length W of the first channel region in the second direction W Less than the length W of the third channel region in the second direction G The length W of the second channel region in the second direction R The length W of the third channel region in the second direction G The length W of the second channel region in the second direction R Less than the length W of the fourth channel region in the second direction B .

[0089] In one exemplary embodiment, such as Figure 4 As shown, W can be used. W W R W G and W B Differentiated designs were implemented to adjust the photodiodes to compensate for ambient light.

[0090] Among them, W W W R W G and W B The following formula can be satisfied:

[0091] W W ×T W ×EQE W / S=W R ×T R ×EQE R / S=W G ×T G ×EQE G / S=

[0092] W B ×T B ×EQE B / S.

[0093] Among them, T W T represents the transmittance of the light-transmitting pattern. W For 100%, T R The transmittance of the first photoresist pattern is denoted as . T G The transmittance of the second photoresist pattern. T B The transmittance of the third photoresist pattern.

[0094] Among them, EQE W / S represents the spectral excitation conversion efficiency per unit area of ​​the first channel region, EQE R / S represents the spectral excitation conversion efficiency per unit area of ​​the second channel region, EQE G / S represents the spectral excitation conversion efficiency per unit area of ​​the third channel region; EQE B / S represents the spectral excitation conversion efficiency per unit area through the fourth channel region.

[0095] in,

[0096] In an exemplary embodiment, W W W R W G W B The formula W can be satisfied. W ×EQEW =W R ×EQE R =W G ×EQE G =W B ×EQE B To W W W R W G W B Implement differentiated design.

[0097] Among them, EQE W For the spectral excitation conversion efficiency of the first channel region, EQE R For the spectral excitation conversion efficiency of the second channel region, EQE G The spectral excitation conversion efficiency of the third channel region; EQE B The spectral excitation conversion efficiency is the fourth channel region.

[0098] like Figure 8 As shown, Figure 8 Curve ① in the middle is the curve of spectral excitation conversion efficiency versus incident light wavelength in the first channel region; Figure 8 Curve ② in the middle is the curve of spectral excitation conversion efficiency versus incident light wavelength in the second channel region; Figure 8 Curve ③ in the middle is the curve of spectral excitation conversion efficiency versus incident light wavelength in the third channel region; Figure 8 Curve ④ in the middle is the curve of spectral excitation conversion efficiency versus incident light wavelength in the fourth channel region.

[0099] Figure 6 This is a top view schematic diagram of a photoelectric sensor assembly according to another embodiment of the present disclosure. Figure 6 As shown Figure 4 The diagram shown is a top view of a photoelectric sensor assembly in different embodiments of this disclosure. Figure 6 As shown, the orthographic projections of the light-transmitting pattern 208, the first photoresist pattern 209, the second photoresist pattern 210, and the third photoresist pattern 211 onto the substrate 201 can all be rectangles.

[0100] like Figure 6 As shown, the orthographic projection of the light-transmitting pattern 208 onto the substrate 201 may at least partially overlap with the orthographic projection of the first photoelectric sensor onto the substrate 201. For example, the orthographic projection of the light-transmitting pattern 208 onto the substrate 201 may cover the orthographic projection of the first photoelectric sensor onto the substrate 201. For example, the orthographic projection of the light-transmitting pattern 208 onto the substrate 201 may overlap with the orthographic projection of the first photoelectric sensor onto the substrate 201, etc.

[0101] like Figure 6As shown, the orthographic projection of the first photoresist pattern 209 onto the substrate 201 may at least partially overlap with the orthographic projection of the second photodetector onto the substrate 201. For example, the orthographic projection of the first photoresist pattern 209 onto the substrate 201 may cover the orthographic projection of the second photodetector onto the substrate 201. For example, the orthographic projection of the first photoresist pattern 209 onto the substrate 201 may overlap with the orthographic projection of the second photodetector onto the substrate 201, etc.

[0102] like Figure 6 As shown, the orthographic projection of the second photoresist pattern 210 onto the substrate 201 may at least partially overlap with the orthographic projection of the third photodetector onto the substrate 201. For example, the orthographic projection of the second photoresist pattern 210 onto the substrate 201 may cover the orthographic projection of the third photodetector onto the substrate 201. For example, the orthographic projection of the second photoresist pattern 210 onto the substrate 201 may overlap with the orthographic projection of the third photodetector onto the substrate 201, etc.

[0103] like Figure 6 As shown, the orthographic projection of the third photoresist pattern 211 onto the substrate 201 may at least partially overlap with the orthographic projection of the fourth photoelectric sensor onto the substrate 201. For example, the orthographic projection of the third photoresist pattern 211 onto the substrate 201 may cover the orthographic projection of the fourth photoelectric sensor onto the substrate 201. For example, the orthographic projection of the third photoresist pattern 211 onto the substrate 201 may overlap with the orthographic projection of the fourth photoelectric sensor onto the substrate 201, etc.

[0104] In one exemplary embodiment, such as Figure 6 As shown, the length W of the first channel region in the second direction W The length W of the second channel region in the second direction R The length W of the third channel region in the second direction G and the length W of the fourth channel region in the second direction B The same, in Figure 6 The symbol W is used to identify the region. W W R W G and W B No separate labeling is provided.

[0105] Figure 7 for Figure 6 The cross-sectional view of the photoelectric sensor assembly shown at point C. Figure 7 In this case, the insulating layer 205 is not patterned to facilitate marking. For example... Figure 7 As shown, the length L of the first channel region in the first direction is... W The length L of the second channel region in the first direction R The length L of the third channel region in the first direction G The length L of the fourth channel region in the first direction B The same, in Figure 7 The middle is marked with L, for L W L R L G and L B No separate labeling is provided.

[0106] like Figure 7 As shown, the thickness H of the first channel region W The thickness H of the third channel region is less than G The thickness H of the third channel region G The thickness H of the second channel region is less than R The thickness H of the second channel region R The thickness H of the fourth channel region is less than B .

[0107] In an exemplary embodiment, the thickness H of the first channel region W The thickness H of the third channel region is less than G The thickness H of the second channel region R The thickness H of the third channel region G The thickness H of the second channel region R The thickness H is less than that of the fourth channel region. B .

[0108] like Figure 7 As shown, H can be used W H R H G and H B Differential designs are employed to adjust the photodiodes to compensate for the total number of ambient light photons.

[0109] Among them, T W ×EQE W / S(H W ) = T R ×EQE R / S(H R )=

[0110] T G ×EQE G / S(H G ) = T B ×EQE B / S(H B ).

[0111] Among them, T W T represents the transmittance of the light-transmitting pattern. W For 100%, T R The transmittance of the first photoresist pattern is denoted as . T G The transmittance of the second photoresist pattern. T BThe transmittance of the third photoresist pattern. EQE W / S(H W The thickness of the first channel region is H. W Spectral excitation conversion efficiency per unit area; EQE R / S(H R The thickness of the second channel region is H. R Spectral excitation conversion efficiency per unit area; EQE G / S(H G The thickness of the third channel region is H. G Spectral excitation conversion efficiency per unit area; EQE B / S(H B The thickness of the fourth channel region is H. B The spectral excitation conversion efficiency per unit area.

[0112] In one exemplary embodiment, H W H R H G and H B And satisfy the formula: EQE W (H W )=EQE R (H R )=EQE G (H G )=EQE B (H B );

[0113] Among them, EQE W (H W The thickness of the first channel region is H. W Spectral excitation conversion efficiency; EQE R (H R The thickness of the second channel region is H. R Spectral excitation conversion efficiency; EQE G (H G The thickness of the third channel region is H. G Spectral excitation conversion efficiency; EQE B (H B The thickness of the fourth channel region is H. B Spectral excitation conversion efficiency.

[0114] In one exemplary embodiment, EQE W (H W Let's take EQE as an example to illustrate. W (H WThe calculation method involves selecting photoelectric sensors with different channel thicknesses and illuminating them with light at various wavelengths (e.g., 380 nm to 780 nm) to obtain a curve showing the relationship between channel thickness and spectral excitation conversion efficiency. Subsequently, the channel thickness H is determined from this curve. W The spectral excitation conversion efficiency, i.e., EQE W (H W ).

[0115] Figure 9 This is a graph showing the output signal intensity of a photoelectric sensor component. Figure 9 As shown, after illumination by an integral standard light source, the ratio of the output signal intensities (currents) generated by the first, second, third, and fourth photoelectric sensors in the existing photoelectric sensor group is 18.3%: 16.7%: 5.4%: 59.5%, approximately 3:3:1:11. That is to say, under the same channel area size, the output signal intensity generated by the first photoelectric sensor is 11 times that of the fourth photoelectric sensor.

[0116] Figure 10 This is a graph showing the output signal strength of the photoelectric sensor assembly in an embodiment of this disclosure. Figure 10 As shown, after illumination by the integral standard light source and compensation using the photoelectric sensor assembly in this embodiment, the ratio of the output signal intensity (current) generated by the first photoelectric sensor, the second photoelectric sensor, the third photoelectric sensor and the fourth photoelectric sensor in this embodiment is 22.2%: 24.9%: 36.7%: 25.4%, and the output signal intensity generated by each photoelectric sensor is relatively close.

[0117] In this embodiment of the disclosure, the signal strength output by the photoelectric sensor is illustrated only by current. In this embodiment of the disclosure, at least some of the photoelectric sensors in the photoelectric sensor group output signal strengths that are substantially the same. For example, the difference in signal strength between two photoelectric sensors may be within 30%, or for example, within 10%.

[0118] This application provides an electronic device. The electronic device includes the photoelectric sensor component described in any of the above embodiments. The electronic device can be any product or component with a display function, such as a display panel, mobile phone, tablet computer, television, laptop computer, digital photo frame, or navigator.

[0119] While the embodiments disclosed in this invention are as described above, the content is merely for the purpose of facilitating understanding of the invention and is not intended to limit the invention. Any person skilled in the art to which this invention pertains may make any modifications and changes to the form and details of the implementation without departing from the spirit and scope disclosed herein; however, the scope of patent protection of this invention shall still be determined by the scope defined in the appended claims.

Claims

1. A photoelectric sensor assembly, characterized in that, include: substrate; At least one photoelectric sensor group located on one side of the substrate; The photoelectric sensor group includes at least two photoelectric sensors, each photoelectric sensor including a channel region, the at least two photoelectric sensors receiving light of different colors, and the at least two photoelectric sensors having channel regions of different sizes; The photoelectric sensor group includes a first photoelectric sensor that receives light of a first color, a second photoelectric sensor that receives light of a second color, a third photoelectric sensor that receives light of a third color, and a fourth photoelectric sensor that receives light of a fourth color. The photoelectric sensor assembly further includes a photoresist layer located on the side of the photoelectric sensor assembly away from the substrate; the photoresist layer includes a light-transmitting pattern, a first photoresist pattern, a second photoresist pattern, and a third photoresist pattern. The light-transmitting pattern overlaps with the orthographic projection of the first photoelectric sensor on the substrate, the first photoresist pattern overlaps with the orthographic projection of the second photoelectric sensor on the substrate, the second photoresist pattern overlaps with the orthographic projection of the third photoelectric sensor on the substrate, and the third photoresist pattern overlaps with the orthographic projection of the fourth photoelectric sensor on the substrate. The first color light is light transmitted through the entire visible light spectrum; the second color light is light transmitted through the first photoresist pattern; the third color light is light transmitted through the second photoresist pattern; and the fourth color light is light transmitted through the third photoresist pattern. The first photoelectric sensor includes a first channel region, the second photoelectric sensor includes a second channel region, the third photoelectric sensor includes a third channel region, and the fourth photoelectric sensor includes a fourth channel region. The thickness H of the first channel region is... W The thickness H of the second channel region R The thickness H of the third channel region G and the thickness H of the fourth channel region B Similarly, the length L of the first channel region in the first direction W The length L of the second channel region in the first direction R The length L of the third channel region in the first direction G and the length L of the fourth channel region in the first direction B Similarly, the length W of the first channel region in the second direction W The length W of the second channel region in the second direction R The length W of the third channel region in the second direction G and the length W of the fourth channel region in the second direction B At least two of them are different; the first direction is different from the second direction, and the plane formed by the first direction and the second direction is parallel to the plane on which the substrate is located; The photoelectric sensor group satisfies the formula: W W T W EQE W / S= W R T R EQE R / S= W G T G EQE G / S= W B T B EQE B / S; Among them, T W T represents the transmittance of the light-transmitting pattern. R T represents the transmittance of the first photoresist pattern. G T represents the transmittance of the second photoresist pattern. B The transmittance of the third photoresist pattern, EQE W / S represents the spectral excitation conversion efficiency per unit area of ​​the first channel region, EQE R / S represents the spectral excitation conversion efficiency per unit area of ​​the second channel region, EQE G / S represents the spectral excitation conversion efficiency per unit area of ​​the third channel region; EQE B / S represents the spectral excitation conversion efficiency per unit area of ​​the fourth channel region; Alternatively, it satisfies the formula: W W W = W R R = W G G = W B B ; Among them, EQE W For the spectral excitation conversion efficiency of the first channel region, EQE R For the spectral excitation conversion efficiency of the second channel region, EQE G The spectral excitation conversion efficiency of the third channel region; EQE B The spectral excitation conversion efficiency of the fourth channel region; Alternatively, the length L of the first channel region in the first direction W The length L of the second channel region in the first direction R The length L of the third channel region in the first direction G and the length L of the fourth channel region in the first direction B Similarly, the length W of the first channel region in the second direction W The length W of the second channel region in the second direction R The length W of the third channel region in the second direction G and the length W of the fourth channel region in the second direction B Similarly, the thickness H of the first channel region W The thickness H of the second channel region R The thickness H of the third channel region G and the thickness H of the fourth channel region B At least two of them are different; The photoelectric sensor group satisfies the formula: T W EQE W / S(H W )= T R EQE R / S(H R ) = T G EQE G / S(H G )=T B EQE B / S(H B ); Among them, EQE W / S(H W The thickness of the first channel region is H. W Spectral excitation conversion efficiency per unit area; EQE R / S(H R The thickness of the second channel region is H. R Spectral excitation conversion efficiency per unit area; EQE G / S(H G The thickness of the third channel region is H. G Spectral excitation conversion efficiency per unit area; EQE B / S(H B The thickness of the fourth channel region is H. B The spectral excitation conversion efficiency per unit area; Alternatively, it satisfies the formula: (H W )= R (H R )= G (H G )= B (H B ); Among them, EQE W (H W The thickness of the first channel region is H. W Spectral excitation conversion efficiency; EQE R (H R The thickness of the second channel region is H. R Spectral excitation conversion efficiency; EQE G (H G The thickness of the third channel region is H. G Spectral excitation conversion efficiency; EQE B (H B The thickness of the fourth channel region is H. B Spectral excitation conversion efficiency.

2. The photoelectric sensor assembly as described in claim 1, characterized in that, It also includes a first electrode and a second electrode located on the side of the photoelectric sensor away from the substrate; the photoelectric sensor also includes a first doped region and a second doped region; the first doped region and the second doped region are located on opposite sides of the channel region in a first direction; the first electrode is connected to the first doped region; the second electrode is connected to the second doped region.

3. The photoelectric sensor assembly as described in claim 1, characterized in that, The photoelectric sensor assembly also includes an insulating layer located between the channel region and the photoresist layer.

4. An electronic device, characterized in that, Includes the photoelectric sensor assembly as described in any one of claims 1 to 3.

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