Single-molecule fullerene field-effect transistors based on quantum interference control mechanisms

Abstract

This invention relates to a single-molecule fullerene field-effect transistor (FET) based on a quantum interference effect control mechanism. The FET is a monomolecular junction composed of a first conductive medium, a fullerene molecule, and a second conductive medium. The first conductive medium serves as the drain of the FET, and the second conductive medium serves as the source. The conductance of the monomolecular junction is controlled by adjusting the gate voltage, thereby controlling the on / off state between the drain and source. This application verifies the feasibility of a single-molecule fullerene field-effect transistor device based on a quantum interference effect control mechanism, opening up new ideas and directions for the application of carbon-based electronics in transistors.

Description

Technical Field

[0001] This invention relates to the field of single-molecule fullerene field-effect transistors, specifically to single-molecule fullerene field-effect transistors based on quantum interference effect control mechanisms. Background Technology

[0002] As silicon-based semiconductor chip technology approaches its physical limits, its performance development can no longer meet the ever-increasing information processing needs of humankind. Therefore, research into new materials and novel device principles has become crucial. Single-molecule transistors are considered one of the important directions for continuing Moore's Law. Unlike silicon-based semiconductor field-effect transistors, which achieve device current switching behavior by controlling carrier concentration, single-molecule field-effect transistors at the sub-nanometer scale achieve device switching behavior by controlling electron tunneling mechanisms. How to efficiently control the molecularly mediated electron tunneling behavior in molecular devices is a key scientific problem in realizing high on / off ratio molecular field-effect transistors.

[0003] Quantum interference, a ubiquitous physical phenomenon in the microscopic world, also exists in the electrical transport of single-molecule devices, and the probability of electron tunneling can be controlled by adjusting the relative positions of the molecular energy level and the electrode Fermi level. Figure 1 As shown in the figure, when the molecule exhibits phase quantum interference, although the electron tunneling probability can be controlled by adjusting the relative positions of the molecular energy level and the electrode Fermi level, the effect is not significant. However, when the molecule exhibits destructive quantum interference, the electron tunneling probability between the anti-resonance peak and the resonance peak differs by several orders of magnitude, far exceeding the control efficiency under phase quantum interference. Therefore, utilizing molecular systems with destructive quantum interference is an important approach to realizing high on / off ratio single-molecule field-effect transistors.

[0004] Fullerenes are a class of novel spherical carbon-based materials with well-defined chemical compositions and structures. They possess a wealth of electrical properties and hold significant promise for applications in electronic devices. However, there is currently no experimental evidence to support the existence of quantum interference effects in single-molecule fullerene devices, and even fewer have demonstrated their use in single-molecule field-effect transistors for controlling quantum interference effects.

[0005] The purpose of this invention is to design a single-molecule fullerene field-effect transistor based on a quantum interference effect control mechanism to address the aforementioned problems. Summary of the Invention

[0006] To address the aforementioned problems, this invention prepares a single-molecule fullerene field-effect transistor and demonstrates, both in principle and experimentally, the feasibility of a single-molecule fullerene field-effect transistor based on a quantum interference effect control mechanism.

[0007] The technical solution of this invention is:

[0008] A single-molecule fullerene field-effect transistor based on a quantum interference effect control mechanism is described. The single-molecule fullerene field-effect transistor is a single-molecule junction composed of a first conductive medium, a fullerene molecule, and a second conductive medium. The first conductive medium serves as the drain of the field-effect transistor, and the second conductive medium serves as the source of the field-effect transistor. The conductance of the single-molecule junction is controlled by adjusting the gate voltage, thereby controlling the turn-on or turn-off of the drain and source.

[0009] Furthermore, the fullerene molecules are dissolved in an electrolyte solution, which is in contact with a counter electrode and a reference electrode, the reference electrode serving as the gate of a field-effect transistor.

[0010] Furthermore, the monomolecular fullerene field-effect transistor is prepared by the following steps:

[0011] A four-electrode system is prepared, comprising a source electrode, a drain electrode, a reference electrode, and a counter electrode. The source electrode and the drain electrode are made of a conductive dielectric. The source electrode is a probe for scanning tunneling microscopy, and the drain electrode is a substrate for scanning tunneling microscopy.

[0012] An electrolyte solution containing dissolved fullerene molecules is added to the four-electrode system, so that the electrolyte solution contacts each electrode of the four-electrode system;

[0013] By using scanning tunneling microscopy to alter the distance between the source and the drain, a source-fullerene molecule-drain molecule junction is constructed.

[0014] Furthermore, the monomolecular junction is located above the gate material covered with an insulating dielectric layer, forming a three-terminal field-effect transistor, and the gate of the three-terminal field-effect transistor serves as the gate of the monomolecular fullerene field-effect transistor.

[0015] Furthermore, the monomolecular fullerene field-effect transistor is prepared by the following steps:

[0016] Using micro-nano fabrication methods, short-circuited electrode pairs are deposited on a gate covered with a dielectric layer.

[0017] Add a solution containing fullerene molecules to the short-circuited electrode pair, or immerse the short-circuited electrode pair in a solution containing fullerene molecules.

[0018] Electromigration technology is used to burn out the short-circuited electrode pair to form an electrode gap, allowing fullerene molecules to fall into the electrode gap and form a monomolecular junction.

[0019] Furthermore, the fullerene molecule is one of the following: empty cage fullerene, endogenous fullerene, and exogenous fullerene.

[0020] Furthermore, the monomolecular fullerene field-effect transistor is used as a field-effect transistor, and its conductance is controlled by the gate.

[0021] Furthermore, the conductivity of the single-molecule fullerene field-effect transistor is modulated based on the quantum interference effect.

[0022] Furthermore, controlling the conductance of the monomolecular fullerene field-effect transistor via the gate includes:

[0023] By applying a continuously varying electrode potential to the gate, the conductivity change of the single-molecule fullerene field-effect transistor is obtained, and the lowest and highest conductivity of the single-molecule fullerene field-effect transistor under the continuously varying electrode potential are obtained, as well as the first voltage corresponding to the lowest conductivity and the second voltage corresponding to the highest conductivity.

[0024] When the first voltage is applied to the gate of the monomolecular fullerene field-effect transistor, the source and drain of the monomolecular fullerene field-effect transistor are disconnected.

[0025] When the second voltage is applied to the gate of the monomolecular fullerene field-effect transistor, the source and drain of the monomolecular fullerene field-effect transistor are turned on.

[0026] Therefore, the present invention provides the following effects and / or advantages:

[0027] This application describes the fabrication of a class of single-molecule fullerene field-effect transistors based on quantum interference effects. The invention utilizes a series of fullerenes and their derivatives as carriers to fabricate single-molecule field-effect transistors, and successfully achieves the modulation of the fullerene molecule's conductance by the gate voltage. The conductance modulation phenomenon and theoretical analysis indicate that the modulation mechanism is based on quantum interference effects. This is the first discovery of quantum interference effects in the field of stereoconjugated molecules, laying the foundation for the subsequent development of carbon-based materials in quantum devices.

[0028] This application utilizes electrochemical regulation of Au / D 5h -C 90 (1) The Au single-molecule device serves as an example to demonstrate in detail the conductance control and intrinsic quantum interference mechanism of a single fullerene molecular field-effect transistor. It was discovered that the device conductance changes under different potentials exhibit a significant destructive quantum interference (DQI) phenomenon. Furthermore, a field-effect transistor was established based on this DQI switching mechanism of stereoconjugated molecules.

[0029] This application, through experimental testing and theoretical prediction of field-effect transistors of a large number of different types of fullerene molecules, found that quantum interference phenomena are ubiquitous in single-fullerene molecule devices, and verified the feasibility of single-fullerene molecule field-effect transistor devices based on quantum interference effect control mechanism, opening up new ideas and directions for the application of carbon-based electronics in transistors.

[0030] It should be understood that the above summary and the following detailed description of the invention are exemplary and explanatory, and are intended to provide further explanation of the invention as claimed. Attached Figure Description

[0031] Figure 1 One embodiment of the present invention, obtained through theoretical calculations, is a single D. 5h -C 90 (1) Transmission spectrum of fullerene molecular junction.

[0032] Figure 2 This is a schematic diagram of a single-molecule fullerene field-effect transistor with a four-electrode system constructed according to one embodiment of the present invention.

[0033] Figure 3 This is a schematic diagram of a single-molecule fullerene field-effect transistor with a three-electrode system constructed according to another embodiment of the present invention.

[0034] Figure 4 This is for any embodiment D of the present invention. 5h -C 90 (1) One-dimensional conductivity histogram of molecular junction.

[0035] Figure 5 This is for any embodiment D of the present invention. 5h -C 90 (1) The change in conductivity of the molecular junction under a potential change from -0.35V to 0.4V.

[0036] Figure 6 This is for any embodiment D of the present invention. 5h -C 90 (1) One-dimensional histograms of the conductance of the molecular junction at potentials of 0V, 0.1V, 0.2V and 0.25V respectively. Detailed Implementation

[0037] To facilitate understanding by those skilled in the art, the structure of the present invention will now be described in further detail with reference to the accompanying drawings:

[0038] Example 1

[0039] refer to Figure 2A single-molecule fullerene field-effect transistor based on the quantum interference effect control mechanism, wherein the single-molecule fullerene field-effect transistor is a single-molecule junction composed of a first conductive medium 1, a fullerene molecule 2, and a second conductive medium 3, wherein the first conductive medium 1 serves as the drain of the field-effect transistor and the second conductive medium 3 serves as the source of the field-effect transistor.

[0040] In this embodiment, both the first and second conductive media are made of gold.

[0041] The conductance of the monomolecular junction can be controlled by adjusting the gate voltage, thereby controlling the turn-on or turn-off of the drain and source.

[0042] The single-molecule fullerene field-effect transistor has a similar structure to the Si-based field-effect transistor, including a source, a drain, and a gate. A single fullerene molecule serves as a channel material connecting the source and the drain, forming a single-molecule junction composed of a first conductive medium, a fullerene molecule, and a second conductive medium. The gate includes a bottom gate structure and an electrochemical electrolyte gate structure, both of which aim to regulate the conductivity of the fullerene single-molecule junction to enable the device to turn on and off.

[0043] The fullerene molecule 2 is dissolved in an electrolyte solution 6, which is in contact with a counter electrode 4 and a reference electrode 5, the reference electrode 5 serving as the gate of a field-effect transistor.

[0044] In this embodiment, the electrolyte solution 6 can be immersed or covered to contact the counter electrode 4 and the reference electrode 5. By applying different voltages to the reference electrode 5, the conductivity of the fullerene molecules can be controlled through the electrolyte solution by applying different gate voltages to the reference electrode 5, thereby observing its electron transport characteristics.

[0045] Preferably, in this embodiment, the reference electrode is silver chloride and the counter electrode is platinum.

[0046] In this process, a 0.25mm diameter gold wire can be etched to serve as the first conductive medium. A layer of black wax is then wrapped around the gold wire as an insulating layer to reduce the exposed area and prevent interference from the current in the electrolyte medium. A gold sheet is then cleaned three times with acetone, ethanol, and distilled water, and finally dried with nitrogen to serve as the second conductive medium.

[0047] The Pt wire electrode and AgCl electrode are used as the counter electrode and reference electrode, respectively, while the gold sheet and etched gold wire serve as the working electrode. Furthermore, this embodiment employs a liquid pool to hold the electrolyte solution. By introducing the reference electrode and counter electrode into the interior of the liquid pool, immersing their ends in the pool, different gate voltages can be applied to the electrolyte solution through the reference electrode.

[0048] The monomolecule fullerene field-effect transistor shown in this embodiment is prepared by the following steps:

[0049] S1, Prepare a four-electrode system, the four-electrode system including a source electrode, a drain electrode, a reference electrode, and a counter electrode, the source electrode and the drain electrode are made of a conductive dielectric, the source electrode is a probe for scanning tunneling microscopy, and the drain electrode is a substrate for scanning tunneling microscopy.

[0050] In this step, a four-electrode system is used, with the electrodes at both ends being conductive electrodes and the two middle electrodes being test electrodes. A field-effect transistor (FET) includes a source, drain, reference electrode, and counter electrode. To realize the structure of a FET, this step uses two conductive electrodes from the four-electrode system as the source and drain of the FET, and then uses two test electrodes from the four-electrode system as the reference electrode and counter electrode, with the reference electrode also serving as the gate electrode. The operating principle of a FET is that by applying or removing a voltage to the gate on the molecular junction, the conductance of a single molecule is modulated. Due to the special electrical transport characteristics of molecules, the transistor can be turned on or off. Furthermore, one conductive electrode in the four-electrode system is connected to or used as a probe in a scanning tunneling microscope (STM), and the other conductive electrode is connected to or used as a substrate in a STM. All components of the FET are constructed using the four-electrode system.

[0051] S2, An electrolyte solution containing dissolved fullerene molecules is added to the four-electrode system, so that the electrolyte solution contacts each electrode of the four-electrode system;

[0052] Since the two water molecules in the middle of the four-electrode system are the test electrodes, this application uses an electrolyte solution containing dissolved fullerene molecules as the liquid in the four-electrode system, so that the electrolyte solution masks, covers or soaks each electrode of the four-electrode system, thereby electrically connecting the four electrodes.

[0053] S3. By using scanning tunneling microscopy to change the distance between the source and the drain, a source-fullerene molecule-drain molecule junction is constructed.

[0054] The four-electrode system in step S1 constructed all the components of the field-effect transistor (FET). Next, in this step, the various parts of the FET are assembled, establishing specific connections or positional relationships. Specifically, the probe tip is driven to repeatedly perform the following operations using scanning tunneling microscopy (STM) to contact the substrate and move away from the substrate. During these operations, the gate potential is first set to 0V, and the modulation of the single-molecule device is recorded. This allows us to observe… Figure 4 A distinct conductivity peak appears, and a stable molecular junction forms at the instrument interface. The potential is then further varied, and the changes in conductivity are observed.

[0055] Scanning tunneling microscopy (STM-BJ) can be used to construct molecular junctions by repeatedly contacting and breaking the substrate with a probe. Changes in conductivity can be observed by measuring the electrical conductivity between the probe and the substrate and by applying different electrochemical potentials. Figure 4 As shown, when a significant conductivity peak appears, it indicates that STM-BJ has captured or constructed a stable molecular junction, which is a probe-molecule-substrate, that is, a fullerene monomolecular junction.

[0056] The examples are mainly achieved through electrochemical electrolyte regulation.

[0057] Example 2

[0058] In this embodiment, the monomolecular junction is located above the gate material covered with an insulating dielectric layer to form a three-terminal field-effect transistor, and the gate of the three-terminal field-effect transistor serves as the gate of the monomolecular fullerene field-effect transistor.

[0059] refer to Figure 3 The three-terminal field-effect transistor is existing technology. From bottom to top, the three-terminal field-effect transistor consists of a gate, a dielectric layer, and an electrode pair. The monojunction is located between the electrode pairs.

[0060] The single-molecule fullerene field-effect transistor described in this embodiment is prepared by the following steps:

[0061] S1, using micro-nano fabrication methods, a short-circuited electrode pair is deposited on a gate covered by a dielectric layer to obtain a three-terminal field-effect transistor. The three-terminal field-effect transistor is existing technology, and its fabrication method is also existing technology.

[0062] S2, add a solution containing fullerene molecules to the short-circuited electrode pair, or immerse the short-circuited electrode pair in a solution containing fullerene molecules.

[0063] S3, using electromigration technology, the short-circuited electrode pair is burned off to form an electrode gap, allowing fullerene molecules to fall into the electrode gap and form a unimolecular junction. This yields... Figure 3 The structure shown.

[0064] The following are the common features of Example 1 and Example 2.

[0065] Furthermore, the fullerene molecule is one of the following: empty cage fullerene, endogenous fullerene, and exogenous fullerene.

[0066] For example, D 5h -C 70 、D 5h -C 90 (1) D 3d-C 96 (3) D 5d -C 100 (1) etc. In other embodiments, it is sufficient that the fullerene molecule is one of an empty-cage fullerene, an endogenous fullerene, or an exogenous fullerene. Regarding the discovery of quantum interference effects, experimental evidence has been obtained for σ systems, planar π systems, and π-π stacked systems, but the three-dimensional π-conjugated system, represented by zero-dimensional fullerene molecules, remains in a blank stage due to its structural complexity. This invention explores the quantum interference behavior of three-dimensional conjugated fullerene molecules and has obtained experimental and theoretical confirmation for the first time. Simultaneously, it demonstrates that fullerenes possess the characteristics of field-effect transistors under the quantum interference effect control mechanism, which is of great significance for the further application of carbon-based materials in quantum devices at the nanoscale.

[0067] This embodiment uses D 5h -C 90 (1) Molecular structure verification confirms its DQI effect. In metal-D 5h -C 90 (1) In a metal molecular junction, by applying a gate voltage that continuously varies from -0.35V to +0.4V to the reference electrode and recording the conductance value every 0.05V, the following results are obtained: Figure 5 The data graph shows that when the potential continuously varies from -0.35V to +0.4V, the applicant found a significant change in the conductivity of the molecular junction. The conductivity reaches its lowest point at 0.2V. Figure 5 The "V"-shaped anti-resonance peak represents a typical DQI effect. The change in conductivity caused by this effect makes the molecular junction exhibit the characteristics of a field-effect transistor, and the magnitude of the change in conductivity is significant.

[0068] Figure 6 The one-dimensional conductance histogram of the molecular junction at several different potentials can be obtained from... Figure 6 The observed significant shift in the conductivity peak indicates that the change in potential modulates the current, proving that the change in conductivity at different potentials is continuous. Simultaneously, regarding D... 5h -C 90 (1) Theoretical calculations were performed on the molecular structure, and it was found that... Figure 1 The DQI (transmission curve trend) and the anti-resonance peak that appeared in the experiment of this embodiment ( Figure 5 This maintains consistency with D, verifying it both theoretically and experimentally. 5h -C 90 (1) The gate-controlled conductivity behavior of the molecular junction is based on the destructive quantum interference effect.

[0069] Furthermore, the electrolyte solution is prepared by dissolving 0.1 mol of tetrabutylhexafluorophosphonate ammonium in every 1 L of polycarbonate.

[0070] A mixed solvent of tetrabutylammonium hexafluorophosphate (TBAPF6) and polycarbonate (PC) was used as the electrolyte to dissolve fullerene molecules. PC was added because fullerene molecules have poor solubility, so this can improve the solubility.

[0071] Furthermore, the electrolyte solution is placed in a corresponding liquid pool, the liquid pool having a pre-drilled aperture, through which the reference electrode and the counter electrode pass to the interior of the liquid pool and come into contact with the electrolyte solution.

[0072] Furthermore, the monomolecular fullerene field-effect transistor is used as a field-effect transistor, and its conductance is controlled by the gate.

[0073] Furthermore, the conductivity of the single-molecule fullerene field-effect transistor is modulated based on the quantum interference effect.

[0074] Furthermore, controlling the conductance of the monomolecular fullerene field-effect transistor via the gate includes:

[0075] By applying a continuously varying electrode potential to the gate, the conductivity change of the single-molecule fullerene field-effect transistor is obtained, and the lowest and highest conductivity of the single-molecule fullerene field-effect transistor under the continuously varying electrode potential are obtained, as well as the first voltage corresponding to the lowest conductivity and the second voltage corresponding to the highest conductivity.

[0076] When the first voltage is applied to the gate of the monomolecular fullerene field-effect transistor, the source and drain of the monomolecular fullerene field-effect transistor are disconnected.

[0077] When the second voltage is applied to the gate of the monomolecular fullerene field-effect transistor, the source and drain of the monomolecular fullerene field-effect transistor are turned on.

[0078] This embodiment, through experimental testing and theoretical prediction of field-effect transistors of a large number of different types of fullerene molecules, found that quantum interference phenomena are ubiquitous in single-fullerene molecule devices, and verified the feasibility of single-fullerene molecule field-effect transistor devices based on quantum interference effect control mechanism, opening up new ideas and directions for the application of carbon-based electronics in transistors.

[0079] It should be noted that any reference signs placed between parentheses in the claims should not be construed as limiting the claims. The word "comprising" does not exclude the presence of components or steps not listed in the claims. The word "a" or "an" preceding a component does not exclude the presence of a plurality of such components. The invention can be implemented by means of hardware comprising several different components and by means of a suitably programmed computer. In a unit claim enumerating several means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.

[0080] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the invention.

[0081] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0082] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms should not be construed as necessarily referring to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

Claims

1. A single-molecule fullerene field-effect transistor based on a quantum interference effect control mechanism, characterized in that: The monomolecular fullerene field-effect transistor is a monomolecular junction composed of a first conductive medium, a fullerene molecule, and a second conductive medium. The first conductive medium serves as the drain of the field-effect transistor, and the second conductive medium serves as the source of the field-effect transistor. The conductance of the monomolecular junction is controlled by adjusting the gate voltage, thereby controlling the turn-on or turn-off of the drain and the source. The monomolecular fullerene field-effect transistor is used as a field-effect transistor, and its conductance is controlled by the gate. The conductivity of the single-molecule fullerene field-effect transistor is controlled based on the quantum interference effect; The conductance of the monomolecular fullerene field-effect transistor is modulated by the gate, including: By applying a continuously varying electrode potential to the gate, the conductivity change of the single-molecule fullerene field-effect transistor is obtained, and the lowest and highest conductivity of the single-molecule fullerene field-effect transistor under the continuously varying electrode potential are obtained, as well as the first voltage corresponding to the lowest conductivity and the second voltage corresponding to the highest conductivity. When the first voltage is applied to the gate of the monomolecular fullerene field-effect transistor, the source and drain of the monomolecular fullerene field-effect transistor are disconnected. When the second voltage is applied to the gate of the monomolecular fullerene field-effect transistor, the source and drain of the monomolecular fullerene field-effect transistor are turned on.

2. The single-molecule fullerene field-effect transistor based on the quantum interference effect control mechanism according to claim 1, characterized in that: The fullerene molecule is dissolved in an electrolyte solution, which is in contact with a counter electrode and a reference electrode, the reference electrode serving as the gate of a field-effect transistor.

3. The single-molecule fullerene field-effect transistor based on the quantum interference effect control mechanism according to claim 2, characterized in that: The monomolecule fullerene field-effect transistor is prepared by the following steps: A four-electrode system is prepared, comprising a source electrode, a drain electrode, a reference electrode, and a counter electrode, wherein the source electrode and the drain electrode are made of a conductive dielectric. An electrolyte solution containing dissolved fullerene molecules is added to the four-electrode system, so that the electrolyte solution contacts each electrode of the four-electrode system.

4. The single-molecule fullerene field-effect transistor based on the quantum interference effect control mechanism according to claim 1, characterized in that: The monomolecular junction is located above the gate material covered with an insulating dielectric layer, forming a three-terminal field-effect transistor, and the gate of the three-terminal field-effect transistor serves as the gate of the monomolecular fullerene field-effect transistor.

5. The single-molecule fullerene field-effect transistor based on the quantum interference effect control mechanism according to claim 4, characterized in that: The monomolecule fullerene field-effect transistor is prepared by the following steps: Using micro-nano fabrication methods, short-circuited electrode pairs are deposited on a gate covered with a dielectric layer. Add a solution containing fullerene molecules to the short-circuited electrode pair, or immerse the short-circuited electrode pair in a solution containing fullerene molecules. Electromigration technology is used to burn out the short-circuited electrode pair to form an electrode gap, allowing fullerene molecules to fall into the electrode gap and form a monomolecular junction.

6. The single-molecule fullerene field-effect transistor based on the quantum interference effect control mechanism according to claim 1, characterized in that: The fullerene molecule is one of the following: empty cage fullerene, endogenous fullerene, and exogenous fullerene.

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