Highly efficient and stable perovskite solar cells and methods of making the same

Abstract

The application provides a high-efficiency and stable perovskite solar cell, including two cell structures of formal cell and reverse cell, the structure of the formal cell comprises a glass substrate, a transparent electrode, an electron transport layer, an electron transport interface passivation layer, a perovskite layer, a hole transport interface passivation layer, a hole transport layer and an electrode; the structure of the reverse cell comprises a glass substrate, a transparent electrode, a hole transport layer, a hole transport interface passivation layer, a perovskite layer, an electron transport interface passivation layer, an electron transport layer and an electrode; the electron transport interface passivation layer is a rare earth metal acetate compound coated by a solution method, the high-efficiency and stable perovskite solar cell and the preparation method thereof passivate the perovskite-electron transport layer interface through ion coordination, effectively reduce the interface charge recombination loss, improve the efficiency and stability of the cell, have a good application prospect, and are favorable to accelerating the industrialization of the perovskite solar cell.

Description

Technical Field

[0001] This invention relates to the field of perovskite solar cell technology, specifically to a high-efficiency and stable perovskite solar cell and its preparation method. Background Technology

[0002] Solar cells utilize the photovoltaic effect to directly convert solar energy into electricity for industrial and residential use, making them one of the most promising technologies for solving the global energy crisis. Perovskite solar cells, in particular, have shown significant improvements in conversion efficiency and are cheaper and easier to manufacture than traditional silicon cells.

[0003] Perovskite solar cells can be structurally classified into "formal" and "inverted" structures based on the direction of light propagation and charge transport. Their basic components mainly include: a transparent electrode, an electron transport layer, a light-absorbing layer composed of perovskite material, a hole transport layer, and electrodes. Electron and hole carriers are generated in the perovskite light-absorbing layer and transported to the electron and hole transport layers, respectively, and then to the electrode layer. Lattice defects exist at the interface between the perovskite light-absorbing layer and the electron transport layer, leading to the recombination loss of electrons and holes.

[0004] Currently, some perovskite solar cells have attempted to address interfacial recombination losses and stability issues, such as by adding organic molecules or ions, polymers, or functionalized graphene at the interface. However, these technologies still have significant limitations, and new, low-cost technologies are still needed to improve efficiency and stability. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide a highly efficient and stable perovskite solar cell and its preparation method, thereby solving the problems mentioned in the background art. In this invention, a rare earth metal acetate compound is used as a passivation layer for the electron transport interface at the interface between the perovskite light absorption layer and the electron transport layer, which improves efficiency and stability.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a high-efficiency and stable perovskite solar cell, comprising two cell structures: a formal cell and a reverse cell. The formal cell structure includes a glass substrate, a transparent electrode, an electron transport layer, an electron transport interface passivation layer, a perovskite layer, a hole transport interface passivation layer, a hole transport layer, and an electrode. The reverse cell structure includes a glass substrate, a transparent electrode, a hole transport layer, a hole transport interface passivation layer, a perovskite layer, an electron transport interface passivation layer, an electron transport layer, and an electrode. The electron transport interface passivation layer is a rare earth metal acetate compound coated by a solution method.

[0007] Furthermore, in the preparation process of the electron transport interface passivation layer, the rare earth metal acetate compound is at least one of samarium acetate, europium acetate, and ytterbium acetate, including the thin film prepared by mixing and dissolving these compounds in proportion (0%-100%) of the total mass, and the thickness of the electron transport interface passivation layer is 0.1-10 nm.

[0008] Furthermore, in the preparation process of the electron transport interface passivation layer, a solution of at least one compound selected from samarium acetate, europium acetate, and ytterbium acetate is prepared, including the mixing and dissolution of these compounds in proportion (0%-100%) of the total mass, with at least one of ethanol and isopropanol as the solvent, and prepared by slit coating, blade coating, spin coating, spraying, or immersion.

[0009] Furthermore, the transparent electrode is at least one of ITO and FTO, with a thickness of 100-1000 nm; the electron transport layer is at least one of C60, PCBM, tin oxide, and titanium dioxide, with a thickness of 1-100 nm.

[0010] Furthermore, the perovskite layer is at least one of lead-based halide perovskite, tin-based halide perovskite, and lead-tin mixed halide perovskite, with a thickness of 50-5000 nm; the hole transport interface passivation layer is at least one of amino and carboxyl molecular compounds, with a thickness of 0.1-10 nm.

[0011] Furthermore, the hole transport layer is at least one of nickel oxide, copper iodide, and PTAA, with a thickness of 1-100 nm; the electrode is at least one of gold, silver, copper, copper-based alloy, ITO, and FTO, with a thickness of 10-1000 nm.

[0012] A highly efficient and stable method for fabricating perovskite solar cells is disclosed. This method is used to prepare two types of cell structures: the formal cell and the inverted cell. The method for preparing the formal cell structure includes the following steps:

[0013] Step 1: Clean the surface of the transparent electrode with deionized water or pure water, and then dry the surface by heating.

[0014] Step 2: Treat the surface of the transparent electrode with ultraviolet ozone or plasma for 1-30 minutes.

[0015] Step 3: Prepare an electron transport layer on the electrode surface. The material used is at least one of C60, PCBM, tin oxide, and titanium dioxide. The method includes vacuum evaporation, slot coating, spraying, etc., with a thickness of 1-100 nm.

[0016] Step 4: Prepare an electron transport interface passivation layer on the surface of the electron transport layer. The material used is a rare earth metal acetate compound, including at least one of samarium acetate, europium acetate, and ytterbium acetate, or a thin film prepared by mixing and dissolving these compounds in proportion (0%-100%) of the total mass. The solvent is at least one of ethanol and isopropanol. The preparation is carried out by slit coating, blade coating, spin coating, spraying, or immersion methods, and the thickness is 0.1-10 nm.

[0017] Step 5: Prepare a perovskite thin film on the surface of the passivation layer at the electron transport interface. The materials used include at least one of lead-based halide perovskite, tin-based halide perovskite, and lead-tin mixed halide perovskite. The methods include slot coating and vacuum evaporation.

[0018] Step 6: Prepare a hole transport interface passivation layer on the surface of the perovskite layer. The material used is at least one of amino and carboxyl molecular compounds. The method includes vacuum evaporation, slot coating, spraying, etc., with a thickness of 0.1-10 nm.

[0019] Step 7: Deposit a hole transport layer on the surface of the transparent electrode. The material used includes one of nickel oxide, copper iodide, and PTAA. The method includes magnetron sputtering, slot coating, spraying, etc., with a thickness of 1-100 nm.

[0020] Step 8: Prepare electrodes on the surface of the hole transport layer. Materials used include gold, silver, copper, copper-based alloys, ITO, FTO, etc. Methods include vacuum evaporation, magnetron sputtering, etc. The electrode thickness is 10-1000 nm.

[0021] Furthermore, the perovskite film undergoes annealing treatment at a temperature of 50-150°C for 0.1-1 h; the thickness of the perovskite film is 50-5000 nm.

[0022] Furthermore, the method for preparing the inverted battery structure includes the following steps:

[0023] Step 1: Clean the surface of the transparent electrode with deionized water or pure water, and then dry the surface by heating.

[0024] Step 2: Treat the surface of the transparent electrode with ultraviolet ozone or plasma for 1-30 minutes.

[0025] Step 3: Deposit a hole transport layer on the surface of the transparent electrode. The materials used include one of nickel oxide, copper iodide, and PTAA. The methods include magnetron sputtering, slot coating, spraying, etc., with a thickness of 1-100 nm.

[0026] Step 4: Prepare a hole transport interface passivation layer on the surface of the hole transport layer. The material used is at least one of amino and carboxyl molecular compounds. The method includes vacuum evaporation, slit coating, spraying, etc., with a thickness of 0.1-10 nm.

[0027] Step 5: Prepare a perovskite thin film on the surface of the passivation layer at the hole transport interface. The material used includes at least one of lead-based halide perovskite, tin-based halide perovskite, and lead-tin mixed halide perovskite. The method includes slot coating and vacuum evaporation. The perovskite thin film is then annealed at a temperature of 50-150℃ for 0.1-1 h; the thickness of the perovskite thin film is 50-5000 nm.

[0028] Step 6: Prepare an electron transport interface passivation layer on the surface of the perovskite thin film. The material used is a rare earth metal acetate compound, including at least one of samarium acetate, europium acetate, and ytterbium acetate, or a thin film prepared by mixing and dissolving these compounds in proportion (0%-100%) of the total mass.

[0029] Step 7: Prepare an electron transport layer on the surface of the passivation layer at the electron transport interface. The material used is at least one of C60, PCBM, tin oxide, and titanium dioxide. The method includes vacuum evaporation, slot coating, spraying, etc., with a thickness of 1-100 nm.

[0030] Step 8: Prepare electrodes on the surface of the electron transport layer. Materials used include gold, silver, copper, copper-based alloys, ITO, FTO, etc. Methods include vacuum evaporation and magnetron sputtering. The electrode thickness is 10-1000 nm.

[0031] Furthermore, in step six, at least one of ethanol and isopropanol is selected as the solvent, and the coating is prepared by slit coating, blade coating, spin coating, spraying, or immersion, with a thickness of 0.1-10 nm.

[0032] The beneficial effects of this invention are:

[0033] 1. This high-efficiency and stable perovskite solar cell and its fabrication method effectively reduce interface charge recombination loss and improve the efficiency and stability of the cell by ion-coordinated passivation of the perovskite-electron transport layer interface.

[0034] 2. This highly efficient and stable perovskite solar cell and its preparation method further improve the efficiency of the preparation process, and the finished perovskite solar cell has higher stability and good application prospects, which is conducive to accelerating the industrialization of perovskite solar cells. Attached Figure Description

[0035] Figure 1 This is a structural diagram of a high-efficiency and stable perovskite solar cell according to the present invention. Detailed Implementation

[0036] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0037] Please see Figure 1 This invention provides a technical solution: a high-efficiency and stable perovskite solar cell, comprising two cell structures: a formal cell and a reverse cell. The formal cell structure includes a glass substrate, a transparent electrode, an electron transport layer, an electron transport interface passivation layer, a perovskite layer, a hole transport interface passivation layer, a hole transport layer, and an electrode. The reverse cell structure includes a glass substrate, a transparent electrode, a hole transport layer, a hole transport interface passivation layer, a perovskite layer, an electron transport interface passivation layer, an electron transport layer, and an electrode. The electron transport interface passivation layer is a rare earth metal acetate compound coated by a solution method.

[0038] In this embodiment, during the preparation of the electron transport interface passivation layer, the rare earth metal acetate compound is at least one of samarium acetate, europium acetate, and ytterbium acetate, including the preparation of a thin film after mixing and dissolving these compounds in a proportion (0%-100%) of the total mass. The thickness of the electron transport interface passivation layer is 0.1-10 nm. During the preparation of the electron transport interface passivation layer, a solution of at least one of samarium acetate, europium acetate, and ytterbium acetate is prepared, including the mixing and dissolution of these compounds in a proportion (0%-100%) of the total mass, with at least one of ethanol and isopropanol as the solvent. The layer is prepared by slit coating, blade coating, spin coating, spraying, or immersion. The transparent electrode is at least one of ITO and FTO, with a thickness of 100-1000 nm. The electron transport layer is at least one of C60, PCBM, tin oxide, and titanium dioxide, with a thickness of 1-100 nm.

[0039] In this embodiment, the perovskite layer is at least one of lead-based halide perovskite, tin-based halide perovskite, and lead-tin mixed halide perovskite, with a thickness of 50-5000 nm; the hole transport interface passivation layer is at least one of amino and carboxyl molecular compounds, with a thickness of 0.1-10 nm; the hole transport layer is at least one of nickel oxide, copper iodide, and PTAA, with a thickness of 1-100 nm; and the electrode is at least one of gold, silver, copper, copper-based alloy, ITO, and FTO, with a thickness of 10-1000 nm.

[0040] This embodiment provides an ion-coordinated passivated perovskite solar cell, the structure of which is a formal structure, such as... Figure 1As shown, 1 includes a glass substrate, 2 a transparent electrode, 3 an electron transport layer, 4 an electron transport interface passivation layer, 5 a perovskite layer, 6 a hole transport interface passivation layer, 7 a hole transport layer, and 8 an electrode.

[0041] In this embodiment, the preparation steps are as follows: The ITO transparent electrode glass substrate is ultrasonically cleaned sequentially with a cleaning agent, deionized water, ethanol, and acetone, then heated and dried with nitrogen; the transparent electrode surface is cleaned with ultraviolet ozone; tin oxide is coated onto the transparent electrode surface in two coats and annealed, then treated with ultraviolet ozone; a samarium acetate isopropanol solution is coated onto the tin oxide surface and annealed; a perovskite solution is coated onto the samarium acetate surface and annealed; octammonium iodide is coated onto the perovskite surface and dried and annealed; a doped PTAA solution is coated onto the octammonium iodide surface and annealed; molybdenum oxide and gold are deposited sequentially onto the PTAA surface by vacuum evaporation.

[0042] The photoelectric conversion efficiency curves of the cells under initial testing conditions and after aging were compared. The solar cell without an electron transport interface passivation layer had an initial efficiency of only 21%, and after 1000 hours of light aging, it retained only 71% of its initial efficiency. In contrast, the solar cell with an electron transport interface passivation layer achieved an initial photoelectric conversion efficiency of 23%, and after 1000 hours of light aging, it still retained 94% of its initial efficiency.

[0043] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the scope of the invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0044] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A high-efficiency and stable perovskite solar cell, characterized in that: The invention includes two battery structures: a standard battery and a reverse battery. The standard battery structure includes a glass substrate, a transparent electrode, an electron transport layer, an electron transport interface passivation layer, a perovskite layer, a hole transport interface passivation layer, a hole transport layer, and an electrode. The reverse battery structure includes a glass substrate, a transparent electrode, a hole transport layer, a hole transport interface passivation layer, a perovskite layer, an electron transport interface passivation layer, an electron transport layer, and an electrode. The electron transport interface passivation layer is a rare earth metal acetate compound coated by a solution method, and the rare earth metal acetate compound is at least one of samarium acetate, europium acetate, and ytterbium acetate.

2. The high-efficiency and stable perovskite solar cell according to claim 1, characterized in that: In the preparation of the electron transport interface passivation layer, the rare earth metal acetate compound is at least one of samarium acetate, europium acetate, and ytterbium acetate, including the thin film prepared by mixing and dissolving these compounds in proportion to their total mass. The thickness of the electron transport interface passivation layer is 0.1-10 nm.

3. The high-efficiency and stable perovskite solar cell according to claim 2, characterized in that: In the preparation of the electron transport interface passivation layer, a solution of at least one of samarium acetate, europium acetate, and ytterbium acetate is prepared, including the mixing and dissolution of these compounds in proportion to their total mass, with at least one of ethanol and isopropanol as the solvent, and the layer is prepared by slit coating, blade coating, spin coating, spraying, or immersion.

4. The high-efficiency and stable perovskite solar cell according to claim 1, characterized in that: The transparent electrode is at least one of ITO and FTO, with a thickness of 100-1000 nm; the electron transport layer is at least one of C60, PCBM, tin oxide, and titanium dioxide, with a thickness of 1-100 nm.

5. The high-efficiency and stable perovskite solar cell according to claim 1, characterized in that: The perovskite layer is at least one of lead-based halide perovskite, tin-based halide perovskite, and lead-tin mixed halide perovskite, with a thickness of 50-5000 nm; the hole transport interface passivation layer is at least one of amino and carboxyl molecular compounds, with a thickness of 0.1-10 nm.

6. The high-efficiency and stable perovskite solar cell according to claim 5, characterized in that: The hole transport layer is at least one of nickel oxide, copper iodide, and PTAA, with a thickness of 1-100 nm; the electrode is at least one of gold, silver, copper, copper-based alloy, ITO, and FTO, with a thickness of 10-1000 nm.

7. A method for fabricating a high-efficiency and stable perovskite solar cell, characterized in that: This preparation method is used to prepare two battery structures as described in claim 1: a standard battery and a reverse battery. The preparation method of the standard battery structure includes the following steps: Step 1: Clean the surface of the transparent electrode with deionized water or pure water, and then dry the surface by heating. Step 2: Treat the surface of the transparent electrode with ultraviolet ozone or ions for 1-30 minutes; Step 3: Prepare an electron transport layer on the electrode surface. The material used is at least one of C60, PCBM, tin oxide, and titanium dioxide. The method includes vacuum evaporation, slot coating, and spraying, with a thickness of 1-100 nm. Step 4: Prepare an electron transport interface passivation layer on the surface of the electron transport layer. The material used is a rare earth metal acetate compound, including at least one of samarium acetate, europium acetate, and ytterbium acetate, or a thin film prepared by mixing and dissolving these compounds in proportion to their total mass. The solvent is at least one of ethanol and isopropanol. The preparation is carried out by slit coating, blade coating, spin coating, spraying, or immersion. The thickness is 0.1-10 nm. Step 5: Prepare a perovskite film on the surface of the passivation layer at the electron transport interface. The materials used include at least one of lead-based halide perovskite, tin-based halide perovskite, and lead-tin mixed halide perovskite. The methods include slit coating and vacuum evaporation. Step 6: Prepare a hole transport interface passivation layer on the surface of the perovskite layer. The material used is at least one of amino and carboxyl molecular compounds. The method includes vacuum evaporation, slit coating, and spraying. The thickness is 0.1-10 nm. Step 7: Deposit a hole transport layer on the surface of the transparent electrode. The material used includes one of nickel oxide, copper iodide, and PTAA. The method includes magnetron sputtering, slot coating, and spraying. The thickness is 1-100 nm. Step 8: Prepare electrodes on the surface of the hole transport layer. The materials used include gold, silver, copper, copper-based alloys, ITO, and FTO. The methods include vacuum evaporation and magnetron sputtering. The electrode thickness is 10-1000 nm.

8. The method for preparing a high-efficiency and stable perovskite solar cell according to claim 7, characterized in that: The perovskite film is annealed at a temperature of 50-150℃ for 0.1-1h; the thickness of the perovskite film is 50-5000nm.

9. The method for preparing a high-efficiency and stable perovskite solar cell according to claim 7, characterized in that: The method for preparing the inverted battery structure includes the following steps: Step 1: Clean the surface of the transparent electrode with deionized water or pure water, and then dry the surface by heating. Step 2: Treat the surface of the transparent electrode with ultraviolet ozone or ions for 1-30 minutes; Step 3: Deposit a hole transport layer on the surface of the transparent electrode. The materials used include one of nickel oxide, copper iodide, and PTAA. The methods include magnetron sputtering, slot coating, and spraying. The thickness is 1-100 nm. Step 4: Prepare a hole transport interface passivation layer on the surface of the hole transport layer. The material used is at least one of amino and carboxyl molecular compounds. The method includes vacuum evaporation, slit coating, and spraying, with a thickness of 0.1-10 nm. Step 5: Prepare a perovskite thin film on the surface of the passivation layer at the hole transport interface. The materials used include at least one of lead-based halide perovskite, tin-based halide perovskite, and lead-tin mixed halide perovskite. The method includes slit coating and vacuum evaporation. The perovskite thin film is then annealed at a temperature of 50-150°C for 0.1-1 h. The thickness of the perovskite thin film is 50-5000 nm. Step 6: Prepare an electron transport interface passivation layer on the surface of the perovskite thin film. The material used is a rare earth metal acetate compound, including at least one of samarium acetate, europium acetate, and ytterbium acetate, or a thin film prepared by mixing and dissolving these compounds in proportion to their total mass. Step 7: Prepare an electron transport layer on the surface of the passivation layer at the electron transport interface. The material used is at least one of C60, PCBM, tin oxide, and titanium dioxide. The method includes vacuum evaporation, slot coating, and spraying, with a thickness of 1-100 nm. Step 8: Prepare electrodes on the surface of the electron transport layer. The materials used include gold, silver, copper, copper-based alloys, ITO, and FTO. The methods include vacuum evaporation and magnetron sputtering. The electrode thickness is 10-1000 nm.

10. The method for preparing a high-efficiency and stable perovskite solar cell according to claim 9, characterized in that: In step six, at least one of ethanol and isopropanol is selected as the solvent, and the coating is prepared by slit coating, blade coating, spin coating, spraying, or immersion, with a thickness of 0.1-10 nm.

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