Gap pin, heat treatment device, and electrostatic chuck device

Abstract

The gap pin of the present invention includes a base having a first face and a second face located on the opposite side of the first face, and a support portion located on the first face and having a third face facing the first face and a fourth face located on the opposite side of the third face and including a contact portion contacting a supported body. The contact portion has an average value of a cross-sectional height difference (Rδc) that is smaller than that of the second face, the cross-sectional height difference (Rδc) indicating a difference between a cross-sectional height at a 25% load length rate in a roughness curve and a cross-sectional height at a 75% load length rate in the roughness curve.

Description

TECHNICAL FIELD

[0001] The present application relates to a gap pin. BACKGROUND

[0002] Conventionally, a heat treatment apparatus for heat-treating a processed object such as a semiconductor wafer, an LCD substrate, or the like on a stage has been used. As such a heat treatment apparatus, a heat treatment apparatus described in Patent Literature 1 is known, which includes a stage having a heat source, a gap pin that supports a processed object on the stage with a gap, and a support pin that penetrates the stage, places the processed object on the gap pin, moves above the gap pin, and is capable of ascending and descending. The heat treatment apparatus described in Patent Literature 1 radiates heat emitted from the heat source from the stage surface to perform heat treatment on the processed object.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2003-22947 SUMMARY

[0006] SOLUTION TO THE PROBLEM

[0007] A gap pin of the present application includes a base portion having a first surface and a second surface on an opposite side of the first surface, and a support portion on the first surface, having a third surface opposite to the first surface, and a fourth surface on an opposite side of the third surface including a contact portion that contacts a supported object. The contact portion has an average value of a cross-sectional height difference (Rδc) that is a difference between a cross-sectional height at 25% of a load length ratio in a roughness curve and a cross-sectional height at 75% of the load length ratio in the roughness curve, which is smaller than that of the second surface.

[0008] Another gap pin of the present application includes a base portion having a first surface and a second surface on an opposite side of the first surface, and a support portion on the first surface, having a third surface opposite to the first surface, and a fourth surface on an opposite side of the third surface including a contact portion that contacts a supported object. The contact portion has an average value of a root mean square slope (RΔq) in a roughness curve, which is smaller than that of the second surface.

[0009] A heat treatment apparatus of the present application includes a stage and the above-described gap pin. The gap pin is provided to the stage in a manner that a supported object is placed on the stage with a gap.

[0010] The electrostatic chuck device of the present application is provided with a stage and a focus ring located around the stage. The focus ring is provided with a fixed portion arranged along a circumference and a movable portion arranged in a concentric circular shape with the fixed portion and capable of displacement in the up-down direction. A clearance pin is provided on the upper surface of the fixed portion. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1A FIG. 1 is a perspective view showing a clearance pin of an embodiment of the present application.

[0012] Figure 1A FIG. 2 is a side view showing the clearance pin of the embodiment of the present application.

[0013] Figure 2A FIG. 3 is a sectional view showing a heat treatment device of an embodiment of the present application.

[0014] Figure 2A FIG. 4 is a sectional view obtained by enlarging the A portion of FIG. 3. Figure 2A

[0015] Figure 3A FIG. 5 is a perspective view showing an electrostatic chuck device of an embodiment of the present application, and shows a state in which a supported body is placed on a stage.

[0016] Figure 3A FIG. 6 is a perspective view showing the electrostatic chuck device of the embodiment of the present application, and shows a state in which the supported body is lifted from the stage. DETAILED DESCRIPTION

[0017] When the clearance pin described in Patent Document 1 is formed of a ceramic such as aluminum oxide, there is a problem that damage to the supported body is easily caused by contact with the supported body. Therefore, a clearance pin that can reduce the possibility of damage to the supported body even when in contact with the supported body is sought.

[0018] In the clearance pin of the present application, the average value of the cross-sectional height difference (Rδc) of the contact portion of the contact surface of the support portion that contacts the supported body or the average value of the root mean square slope (RΔq) is small. Therefore, it is difficult for the contact portion to be chipped. Therefore, according to the clearance pin of the present application, the possibility of damage to the supported body can be reduced even when in contact with the supported body.

[0019] An embodiment of the clearance pin of the present application will be described in detail based on FIGS. 1A and IB. Figure 1A FIG. 1 is a perspective view showing a clearance pin 1 of an embodiment of the present application. Figure 1A FIG. 1 is a perspective view showing a clearance pin 1 of an embodiment of the present application. Figure 1A The clearance pin 1 of the embodiment shown includes a base portion 2 and a support portion 3.

[0020] ​The base 2 is a member having a first surface (hereinafter also referred to as the upper surface) and a second surface (hereinafter also referred to as the lower surface) located on the opposite side of the first surface, and for example having a flat plate shape. Figure 1A The base 2 shown has a circular shape when viewed from above. The base 2 is a component for fixing the support 3, which will be described later, and is made of ceramic, for example. There is no limitation on the type of ceramic, and examples include ceramics with aluminum oxide as the main component, ceramics with zirconium oxide as the main component, ceramics with silicon carbide as the main component, and ceramics with boron carbide as the main component.

[0021] In this specification, "principal component" refers to a component that accounts for 80% or more of the total 100% by mass of the components constituting the ceramic. The components constituting the ceramic can be identified using an X-ray diffraction apparatus employing CuKα lines. The content of each component can be determined, for example, using an ICP (Inductively Coupled Plasma) luminescence spectrophotometer or a fluorescence X-ray analyzer.

[0022] In particular, when the gap pin 1 is made of ceramic with aluminum oxide as the main component, the aluminum oxide content is preferably 99.6% by mass or more.

[0023] The size of the base 2 can be appropriately set, for example, according to the size of the device equipped with the gap pin 1. Figure 1A As shown, when viewed from above, if the base 2 has a circular shape, the diameter of the base 2 is ( Figure 1B D1) is, for example, between 3.5mm and 6.5mm. The height of base 2 ( Figure 1B H1) for example, is 0.5 mm or more and 1.1 mm or less.

[0024] The support portion 3 is a member having a third surface opposite to the first surface (upper surface) of the base portion 2 and a fourth surface located on the opposite side of the third surface, and for example having a columnar shape. Figure 1A The support portion 3 shown is cylindrical. The support portion 3 is a component for supporting the supported body, and is formed, for example, by ceramic. As a ceramic, similar to the base portion 2 described above, examples include ceramics with aluminum oxide as the main component, ceramics with zirconium oxide as the main component, ceramics with silicon carbide as the main component, and ceramics with boron carbide as the main component.

[0025] The size of the base 2 is appropriately set, for example, according to the size of the device equipped with the gap pin 1. Figure 1A As shown, in the case of a cylindrical support portion 3, the diameter of the support portion 3 ( Figure 1B The height of support 3 (D2) is, for example, 2mm or more but less than 3mm. Figure 1BThe average value of the surface roughness (Ra) of the contact portion 3a of the support portion 3 is, for example, 0.8 μm or less. The average value of the surface roughness (Ra) of the lower surface of the base portion 2 is, for example, 1.2 μm or more and 1.8 μm or less.

[0026] In the gap pin 1 of one embodiment, the average value of the cross-sectional height difference (Rδc) of the contact portion 3a of the fourth face (hereinafter, the case where described as "support face") of the support portion 3 which contacts the supported body is smaller than the average value of the cross-sectional height difference (Rδc) of the lower surface of the base portion 2 (the face of the base portion 2 which opposes the face (upper surface) where the support portion 3 is provided). Here, the "cross-sectional height difference (Rδc)" means the difference between the cross-sectional height at the 25% load length ratio in the roughness curve and the cross-sectional height at the 75% load length ratio in the roughness curve.

[0027] The cross-sectional height difference (Rδc) can be measured in accordance with JIS B 0601:2001, using a laser microscope (manufactured by KEYENCE CORPORATION, super depth color 3D shape measuring microscope (VK-X1000 or subsequent models)). As the measurement conditions, the illumination method is set to coaxial illumination, the measurement magnification is set to 480 times, the cutoff value λs is set to none, the cutoff value λc is set to 0.08 mm, the correction of the terminal effect is set to yes, and the measurement range is set to 710 μm x 533 μm. With respect to the measurement range, four lines set as the measurement object are drawn at substantially equal intervals, and line roughness measurement is performed. The length of each line set as the measurement object is 560 μm. The average value of the cross-sectional height difference (Rδc) is calculated using the measured values of the cross-sectional height difference (Rδc) obtained for each line as the object.

[0028] The average value of the cross-sectional height difference (Rδc) in the contact portion 3a of the support portion 3 is smaller than the average value of the cross-sectional height difference (Rδc) in the lower surface of the base portion 2, that is, the average value of the cross-sectional height difference (Rδc) in the contact portion 3a is relatively small, so even if the contact portion 3a of the support face contacts the supported body, it is difficult to degranulate from the contact portion 3a. As a result, even if the contact portion 3a contacts the supported body, it is possible to reduce the possibility of causing damage to the supported body. Also, the average value of the cross-sectional height difference (Rδc) in the lower surface of the base portion 2 is relatively large, so for example, in the case where the gap pin 1 is joined to a device or the like, a sufficient anchoring effect is exerted. As a result, even if heating and cooling are repeated, it is possible to improve the joining reliability while making it difficult to peel off.

[0029] The difference between the average value of the cross-sectional height difference (Rδc) in the contact portion 3a of the support portion 3 and the average value of the cross-sectional height difference (Rδc) in the lower surface of the base portion 2 is, for example, preferably 0.05 μm or more. When the difference is 0.05 μm or more, the average value of the cross-sectional height difference (Rδc) in the contact portion 3a of the support portion 3 is sufficiently small. As a result, it is more difficult to degranulate from the contact portion 3a, and it is possible to further reduce the possibility of causing damage to the supported body.

[0030] The average of the cross-sectional height difference (Rδc) in the lower surface of the base 2 is preferably 0.2 μm or more and 0.37 μm or less. When the average of the cross-sectional height difference (Rδc) in the lower surface of the base 2 is in this range, a higher anchoring effect is exerted, and the joining reliability can be further improved. Also, in the case where the clearance pin 1 is joined to a recess of a device or the like, when the burrs generated from the lower surface of the base 2 are applied between the inner bottom surfaces of the recess in an unstable state, the inner bottom surfaces of the recess and the lower surface of the base 2 become non-parallel. Since it is difficult to generate such burrs, the influence of the burrs becomes smaller, and the axis of the support portion 3 with respect to the inner bottom surfaces of the recess is less likely to be damaged. As a result, the possibility of damage to the supported body can be further reduced. Such an effect is not limited to the case where the clearance pin 1 is joined to the recess, and such an effect is exerted even in the case where the clearance pin 1 is joined to a flat site which is not a recess, for example.

[0031] The support surface of the support portion 3 which contacts the supported body can be a fired surface or a ground surface. When the support surface is a fired surface, there is no broken layer in the support surface, and the generation of burrs due to the broken layer is reduced. On the other hand, when the support surface is a ground surface, the arithmetic average roughness Ra is smaller than that of a fired surface. Therefore, even when the support surface contacts the supported body, it is difficult to generate large burrs. As a result, the possibility of damage to the supported body can be further reduced.

[0032] In the clearance pin 1, the average of the root mean square slope (RΔq) in the roughness curve of the contact portion 3a of the support surface of the support portion 3 which contacts the supported body can be smaller than that of the lower surface of the base 2, regardless of the cross-sectional height difference (Rδc).

[0033] The root mean square slope (RΔq) is measured under the same conditions as the cross-sectional height difference (Rδc). The average of the root mean square slope (RΔq) is calculated using the measured values of the cross-sectional height difference (Rδc) obtained for each line.

[0034] The average of the root mean square slope (RΔq) in the contact portion 3a of the support surface is smaller than the average of the root mean square slope (RΔq) in the lower surface of the base 2, that is, the average of the root mean square slope (RΔq) in the contact portion 3a is small. Therefore, even when the contact portion 3a of the support surface contacts the supported body, it is difficult to generate burrs from the contact portion 3a. As a result, even when the contact portion 3a contacts the supported body, the possibility of damage to the supported body can be reduced. Also, the average of the root mean square slope (RΔq) in the lower surface of the base 2 is large, and therefore, in the case where the clearance pin 1 is joined to a device or the like, for example, a sufficient anchoring effect is exerted. As a result, even when the temperature is repeatedly increased and decreased, the joint can be less likely to be peeled off, and the joining reliability can be improved.

[0035] The difference between the average of the root mean square irregularity (RΔq) in the contact portion 3a of the bearing surface and the average of the root mean square irregularity (RΔq) in the lower surface of the base 2 is preferably 0.08 or more, for example. When the difference is 0.08 or more, the root mean square irregularity (RΔq) in the contact portion 3a of the bearing surface is sufficiently small. As a result, it is more difficult to thresh from the contact portion 3a, and it is possible to further reduce the possibility of damage to the supported body.

[0036] The average of the root mean square irregularity (RΔq) in the lower surface of the base 2 is preferably 0.17 or more and 0.48 or less. When the average of the root mean square irregularity (RΔq) in the lower surface of the base 2 is in this range, a higher anchoring effect is exerted, and it is possible to further improve the joining reliability. Also, in the case where the clearance pin 1 is joined to a recess of a device or the like, the influence of the threshing as described above becomes smaller, and thus the axis of the bearing portion 3 with respect to the inner bottom surface of the recess is less likely to be damaged. As a result, it is possible to further reduce the possibility of damage to the supported body.

[0037] In the case where the average of the root mean square irregularity (RΔq) in the contact portion 3a of the bearing surface is smaller than the average of the root mean square irregularity (RΔq) in the lower surface of the base 2, the bearing surface in the bearing portion that contacts the supported body can be a sintered surface or a ground surface, as described above.

[0038] The contact portion 3a can also be curved convexly toward the supported body. The radius of curvature R of the curved contact portion 3a is 3 m or more and 8 m or less, for example, when calculated using the following equation (1).

[0039] R = ((W / 2) 2 + h 2 ) / 2h ··· (1)

[0040] Here, the width W of the contact portion 3a is the length 710 μm in the lateral direction of the measurement range of the cross-sectional height difference (Rδc) and the root mean square irregularity (RΔq), and the height h is the maximum height of the measurement cross-sectional curve with respect to a straight line connecting both ends of the measurement cross-sectional curve in the measurement range.

[0041] When the radius of curvature R of the contact portion 3a is 3 m or more, the contact portion 3a becomes gently convex, and thus it is possible to reduce the possibility of large threshing that is likely to occur from the contact portion 3a even when contacting the supported body. When the radius of curvature R is 8 m or less, it is possible to reduce the contact area with respect to the supported body, and thus it is possible to suppress the amount of threshing that is likely to occur from the contact portion 3a.

[0042] The support surface is preferably composed of a DLC film. In a case where the plasma processing space is located on the side of the support surface of the gap pin 1, when the thermal conductivity of the support surface is high, the member provided around the support portion 3 of the gap pin 1 easily expands due to the radiation heat of the support surface. Even if heat of 200°C to 400°C is generated in the plasma processing space due to plasma processing, the thermal conductivity of the DLC film is low (for example, 1 W / (m·K) or less at 20°C), and thus when the support surface is composed of a DLC film, the radiation heat of the support surface is small, and thus expansion of the member provided around the support portion 3 can be suppressed.

[0043] The side surface of the support portion 3 is preferably composed of a DLC film. The same effects as the above-described effects can be obtained. The thickness of the DLC film of the support surface can be larger than the thickness of the DLC film of the side surface of the support portion 3. When such a structure is adopted, the heat insulation effect by the support surface becomes high. Here, in a case where the support portion 3 is cylindrical, the side surface of the support portion 3 becomes a curved surface. In a case where the support portion 3 is prismatic, there is an intersection line where the side surfaces of the support portion 3 intersect each other. In either case, the DLC film of the side surface of the support portion 3 easily accumulates internal stress more than the DLC film of the support surface. If the thickness of the DLC film of the side surface of the support portion 3 is smaller than the thickness of the DLC film of the support surface, increase in accumulation of internal stress is suppressed, and thus long-term use can be achieved.

[0044] The thickness of the DLC film of the support surface is, for example, 1 μm or more and 10 μm or less. The difference between the thickness of the DLC film of the support surface and the thickness of the DLC film of the side surface of the support portion 3 is, for example, 0.2 μm or more and 0.8 μm or less. For the same reasons as the above-described reasons, the upper surface of the base portion 2 is preferably composed of a DLC film.

[0045] The side surface of the base portion 2 is preferably composed of a DLC film. The thickness of the DLC film of the side surface of the base portion 2 can be smaller than the thickness of the DLC film of the upper surface. When such a structure is adopted, the heat insulation effect by the upper surface becomes high. Here, in a case where the base portion 2 is a circular plate, the side surface of the base portion 2 becomes a curved surface. In a case where the base portion 2 is prismatic, there is an intersection line where the side surfaces of the base portion 2 intersect each other. In either case, the DLC film of the side surface of the base portion 2 easily accumulates internal stress more than the DLC film of the upper surface. If the thickness of the DLC film of the side surface of the base portion 2 is smaller than the thickness of the DLC film of the upper surface, increase in accumulation of internal stress is suppressed, and thus long-term use can be achieved.

[0046] The thickness of the DLC film of the upper surface is, for example, 1 μm or more and 10 μm or less. The difference between the thickness of the DLC film of the upper surface and the thickness of the DLC film of the side surface of the base portion 2 is, for example, 0.2 μm or more and 0.8 μm or less.

[0047] In the case where the support portion 3 has the DLC film, the support portion 3 is preferably composed of a ceramic in which silicon carbide is a main component. Similarly, in the case where the base portion 2 has the DLC film, the base portion 2 is preferably composed of a ceramic in which silicon carbide is a main component. The DLC film can improve the adhesion strength to the ceramic in which silicon carbide is a main component because of the good adhesiveness to silicon carbide.

[0048] The DLC film described above can also contain at least any one of argon, helium, and hydrogen. In particular, when hydrogen is contained, the DLC film can be one in which the heat resistance and corrosion resistance are improved. The DLC film can be identified using a Raman spectrometer.

[0049] The method of manufacturing the gap pin 1 according to an embodiment is not limited, and is manufactured, for example, by the following steps. In the case where aluminum oxide is a main component of the ceramic that forms the gap pin 1, for example, each of powders of aluminum oxide (purity of 99.9% by mass or more), magnesium hydroxide, silicon oxide, calcium carbonate, and chromium oxide, and a solvent (ion exchange water) are put into a pulverizer.

[0050] Next, after the average particle diameter (D50) of the powder is made to be 1.5 μm or less, an organic binder and a dispersant that disperses the aluminum oxide powder are added, and mixed to obtain a slurry. As the organic binder, for example, an acrylic emulsion, polyvinyl alcohol, polyethylene glycol, polyethylene oxide, or the like can be given.

[0051] The content of the magnesium hydroxide powder in the total 100% by mass of the powders described above is 0.3% by mass or more and 0.42% by mass or less, the content of the silicon oxide powder is 0.5% by mass or more and 0.8% by mass or less, the content of the calcium carbonate powder is 0.06% by mass or more and 0.1% by mass or less, and the remaining portion is the aluminum oxide powder and unavoidable impurities. The total content of the unavoidable impurities is set to be 0.1% by mass or less.

[0052] After the slurry is spray granulated to obtain granules, a uniaxial press forming device or a cold isostatic press forming device is used to pressurize the forming pressure to be 78 MPa or more and 128 MPa or less to obtain a formed body that becomes the basis of the gap pin 1. The formed body is fired in an atmospheric atmosphere at 1500°C or more and 1700°C or less and for 4 hours or more and 6 hours to obtain the gap pin 1.

[0053] In the thus obtained gap pin 1, in the case where the contact portion 3a of the bearing surface and the lower surface of the base portion 2 are both sintered surfaces, when the average value of the cross-sectional height difference (Rδc) in the contact portion 3a is found, it is 0.2091 μm, and when the average value of the cross-sectional height difference (Rδc) in the lower surface of the base portion 2 is found, it is 0.2682 μm. Also, when the average value of the root mean square inclination (RΔq) in the contact portion 3a of the bearing surface is found, it is 0.2121, and when the average value of the root mean square inclination (RΔq) in the lower surface of the base portion 2 is found, it is 0.3041. The measurement was performed using the measurement method described above.

[0054] If necessary, in the thus obtained gap pin 1, the bearing surface of the bearing portion 3 that contacts the supported body can also be subjected to polishing. The polishing is performed, for example, by brush polishing, buff polishing, or the like.

[0055] In the case where the bearing surface is subjected to brush polishing, in a state where the gap pin 1 is fixed, a roller obtained by bundling a brush of a length of 10 mm or so is rotated at a speed of 50 rpm to 200 rpm or so, and polishing is performed for 30 minutes to 60 minutes. As the polishing agent, a paste obtained by adding diamond powder to an oil-based agent is used, and the paste is applied to the brush in advance. The average particle diameter of the diamond powder is, for example, 0.5 μm or more and 6 μm or less.

[0056] In order to obtain a gap pin 1 in which the difference between the average value of the cross-sectional height difference (Rδc) of the contact portion 3a of the bearing surface and the lower surface of the base portion 2 is 0.05 μm or more, the rotation speed of the roller and the polishing time are, for example, as described above. The average particle diameter of the diamond powder is, for example, 0.5 μm or more and 4 μm or less.

[0057] In order to obtain a gap pin 1 in which the difference between the average value of the root mean square inclination (RΔq) of the contact portion 3a of the bearing surface and the lower surface of the base portion is 0.08 or more, the rotation speed of the roller and the polishing time are, for example, as described above. The average particle diameter of the diamond powder is, for example, 0.5 μm or more and 3 μm or less.

[0058] In the case where the bearing surface is subjected to buff polishing, the base material for polishing is not limited, and examples thereof include felt, cotton tape, cotton wool tape, and the like. As the polishing agent, examples thereof include diamond powder, green silicon carbide (GC) powder, and the like. These polishing agents are used in a paste state by being added to an oil-based agent.

[0059] The average particle diameter of the polishing agent is, for example, 0.5 μm or more and 6 μm or less. The outer diameter of the base material is 150 mm, and the rotation speed thereof is, for example, 28 m / minute or more and 170 m / minute or less. The polishing time is, for example, 0.5 minutes or more and 5 minutes or less.

[0060] In the case where the support surface is a brush polishing surface and the lower surface of the base 2 is a fired surface, the average value of the cross-sectional height difference (Rδc) in the contact portion 3a was 0.0474 μm, and the average value of the cross-sectional height difference (Rδc) in the lower surface of the base 2 was 0.2982 μm. Also, the average value of the root mean square slope (RΔq) in the contact portion 3a of the support surface was 0.0761, and the average value of the root mean square slope (RΔq) in the lower surface of the base 2 was 0.3223. The measurement was performed using the measurement method described above.

[0061] In the case where the main component of the ceramic forming the clearance pin is silicon carbide, first, as a silicon carbide powder, a coarse granular powder and a fine granular powder are prepared, and water and, if necessary, a dispersant are pulverized and mixed for 40 to 60 hours using a ball mill or a bead mill to produce a slurry. Here, the particle diameter of each of the fine granular powder and the coarse granular powder after the pulverization and mixing ranges from 0.4 μm or more to 4 μm or less and from 11 μm or more to 34 μm or less. Next, after adding a sintering aid composed of a boron carbide powder and an amorphous carbon powder or a phenol resin and a binder to the obtained slurry and mixing, spray drying is performed to obtain a granule whose main component is silicon carbide.

[0062] As the mass ratio of the coarse granular powder to the fine granular powder, for example, the coarse granular powder is 6 mass% or more and 15 mass% or less, and the fine granular powder is 85 mass% or more and 94 mass% or less.

[0063] Next, the granule is filled in a prescribed molding die, and a formed body as a precursor of the clearance pin is obtained by pressing and forming from the thickness direction at a pressure appropriately selected in the range of 49 to 147 MPa. Then, the obtained formed body is subjected to debinding in a nitrogen atmosphere by setting the temperature to 450 to 650°C and the holding time to 2 to 10 hours to obtain a debound body.

[0064] Next, the debound body is subjected to holding and sintering in a reduced pressure atmosphere of an inactive gas by setting the maximum temperature to 1800°C or more and 2200°C or less and the holding time to 3 hours or more and 6 hours or less to obtain the clearance pin 1. In the case where the clearance pin has silicon carbide as the main component, as described above, the sintering aid can be a boron carbide powder and an amorphous carbon powder or a phenol resin, and the sintering aid can be an aluminum oxide powder and a rare earth oxide powder. The rare earth oxide powder is, for example, a yttrium oxide powder.

[0065] When the aluminum trioxide powder and the yttrium oxide powder are sintering aids, sintering becomes liquid phase sintering, and a grain boundary phase is formed. If the content of aluminum and yttrium, converted into oxides, is in the above range, the thermal conductivity can be made relatively low, to 50 W / (m·K) or more and 70 W / (m·K) or less.

[0066] When the aluminum trioxide powder and the yttrium oxide powder are sintering aids, sintering becomes liquid phase sintering, and a grain boundary phase is formed. If the content of aluminum and yttrium, converted into oxides, is in the above range, the thermal conductivity can be made relatively low, to 50 W / (m·K) or more and 70 W / (m·K) or less.

[0067] In the case where the thus obtained gap pin 1 is formed with a DLC film, for example, a plasma ion implantation film formation method can be used. The plasma ion implantation film formation method is a method in which a high-frequency pulse for pulse generation and a negative high-voltage pulse for ion implantation are superimposed, plasma is generated around the support portion, and ions in the plasma are introduced to the support portion by the high-voltage pulse.

[0068] Specifically, first, a pulse high-frequency discharge voltage of 13.56 MHz is applied to the gap pin before film formation disposed in a low-pressure hydrocarbon gas atmosphere, and ion species in a hydrocarbon gas plasma are generated. Subsequently, a negative high-voltage pulse discharge voltage is applied to the gap pin in a residual plasma, and the gap pin is given an impact of ions, and thus a support surface, a side surface of the support portion, an upper surface of the base portion, a side surface of the base portion, and the like composed of a DLC film can be obtained.

[0069] It is preferable to perform plasma cleaning treatment using argon, helium, hydrogen, or the like before the ion species in the hydrocarbon gas plasma are generated. By this plasma cleaning treatment, impurities and the like adhering to the support portion and the base portion can be removed, and thus a DLC film with higher adhesiveness can be obtained for the support portion and the base portion.

[0070] The gap pin 1 of one embodiment is adopted as a member of various industrial apparatuses. As such industrial apparatuses, for example, a heat treatment apparatus, an electrostatic chuck apparatus, an inspection apparatus for a semiconductor substrate, a developing apparatus, and the like can be given.

[0071] The heat treatment apparatus has, for example, a placement table and the gap pin 1 of one embodiment. The gap pin 1 of one embodiment is provided to the placement table in a manner that a supported body is placed on the placement table with a gap. The heat treatment apparatus is configured to heat the supported body by a heating element provided to the placement table. Figure 2A The heat treatment apparatus will be described in more detail with reference to FIGS. 1A and 1B. Figure 2A is a cross-sectional view of a heat treatment apparatus which shows one embodiment of the present application, Figure 2B is an enlarged cross-sectional view of A portion of Figure 2A .

[0072] The heat treatment apparatus 10 has a processing chamber 11 for heating the wafer W. The processing chamber 11 has a stage 12 for placing the wafer W, a top pin 13 for raising and lowering the wafer W on the stage 12, and a gate 14 for blocking external gas.

[0073] The gate 14 is raised or lowered by the operation of the working cylinder 15. When the gate 14 rises, it contacts the limiting member 17 installed at the lower part of the cover 16, and the processing chamber 11 becomes a closed space. An air supply port (not shown) is provided on the limiting member 17, and the air flowing into the processing chamber 11 from the air supply port is discharged from the exhaust port 18 formed in the upper center of the processing chamber 11. The air flowing in from the air supply port does not directly contact the wafer W, and the wafer W can be heated at a specified temperature.

[0074] The mounting stage 12 is a circular plate larger than the wafer W and has a built-in heater 19 for heating the wafer W. Gap pins 1 are provided on the mounting stage 12 to separate the wafer W from the mounting surface, thus suppressing the adhesion of particles generated from the mounting surface of the mounting stage 12 to the wafer W.

[0075] like Figure 2B As shown, the gap pin 1 includes a base 2 installed in a recess 12a provided on the mounting surface of the mounting stage 12 and a support 3 provided on the upper surface of the base 2 and supporting the wafer W. The difference between the heat supplied to the wafer W from the gap pin 1 and the heat supplied to the wafer W from the mounting surface of the mounting stage 12 becomes smaller.

[0076] Specifically, a retaining member 20 is embedded in the space S above the base 2 within the recess 12a to reduce the thermal gradient between the stage 12 and the gap pin 1. The retaining member 20 is preferably made of the same material as the stage 12. Other materials may also be used, provided they have the same thermal conductivity as the stage 12. The gap between the stage 12 and the wafer W is, for example, 0.1 mm or more and 0.3 mm or less.

[0077] The top pin 13 secures the lower part to the connecting guide 22, which is connected to the timing belt 23. The timing belt 23 is engaged with the drive pulley 25 driven by the stepper motor 24 and the driven pulley 26 positioned above the drive pulley 25. By changing the rotation direction of the stepper motor 24, the top pin 13 can rise or fall within the through hole 21 in the circumferential direction of the mounting stage 12, supporting the wafer W at the position indicated by the double-dotted line or placing the wafer W on the mounting stage 12.

[0078] The electrostatic chuck device of the present invention includes, for example, a stage, a focusing ring, and a gap pin 1 according to one embodiment. The focusing ring is located around the stage. The focusing ring has a fixed portion disposed along the circumference and a movable portion concentric with the fixed portion and capable of vertical displacement. A gap pin 1 according to one embodiment is provided on the upper surface of the fixed portion. Based on Figure 3A And 3B provides a more detailed description of the electrostatic chuck device of the present invention.

[0079] Figure 3A This is a perspective view showing an electrostatic chuck device according to an embodiment of the present invention, and showing the state in which the support is placed on the mounting platform. Figure 3B This is a perspective view of an electrostatic chuck device according to an embodiment of the present invention, showing the supported body being lifted from the platform.

[0080] Figure 3A The electrostatic chuck device 30 shown in 3B has a holding part 32 for mounting a stage 31. The stage 31 has a mounting surface 31a for mounting the wafer W.

[0081] The holding part 32 is circular and positioned on the side opposite to the stage 31 (below the electrostatic adsorption electrode (not shown)). The holding part 32 cools the stage 31 to adjust it to the desired temperature. The holding part 32 has a flow path (not shown) for water circulation inside. The holding part 32 is made of, for example, aluminum, aluminum alloy, copper, copper alloy, stainless steel (SUS), titanium, etc. When the electrostatic chuck device 30 is used in a plasma space, the surface of the holding part 32 at least exposed to the plasma is preferably coated with an insulating film such as aluminum oxide.

[0082] like Figure 3A As shown, the focusing ring 33 has an upper ring 34 located on the upper side and a lower ring 35 located below the upper ring 34. The upper ring 34 has a fixed part 37 arranged along the circumference and a movable part 36 arranged on a concentric circle with the fixed part and capable of displacement in the vertical direction.

[0083] like Figure 3B As shown, when the top pin 38 rises, the movable part 36 rises and lifts the wafer W. A positioning hole (not shown) is provided on the lower surface of the movable part 36, which engages with a gap pin 1 provided on the upper surface of the lower ring 35. By providing the gap pin 1 and the positioning hole, the movable part 36 is positioned on the lower ring 35 when it descends together with the top pin 38. On the other hand, the fixing part 37 is fixed to the lower ring 35.

[0084] The movable part 36 has openings 36b at both ends, and is C-shaped when viewed from above. The fixed part 37, when the movable part 36 is not moving, is located within the openings 36b when viewed from above. Figure 3AIn the electrostatic chuck device 30 shown, the movable portion 36 is in contact with the fixed portion 37 at both end portions in the circumferential direction. In the electrostatic chuck device 30 shown, the opening portion 36b of the movable portion 36 is open. In the state shown, a carrying mechanism (not shown) such as a carrying arm that carries the wafer W can be inserted into the opening portion 36b from the outside in the radial direction. The movable portion 36 has a fifth surface 36a that is inclined toward the lower side at both end portions in the circumferential direction. Figure 3B In the electrostatic chuck device 30 shown, the opening portion 36b of the movable portion 36 is open. In the state shown, a carrying mechanism (not shown) such as a carrying arm that carries the wafer W can be inserted into the opening portion 36b from the outside in the radial direction. The movable portion 36 has a fifth surface 36a that is inclined toward the lower side at both end portions in the circumferential direction. Figure 3B In the state shown, a carrying mechanism (not shown) such as a carrying arm that carries the wafer W can be inserted into the opening portion 36b from the outside in the radial direction. The movable portion 36 has a fifth surface 36a that is inclined toward the lower side at both end portions in the circumferential direction.

[0085] The fixed portion 37 has a sixth surface 37a that is inclined toward the upper side at both end portions in the circumferential direction. In the stable state, the fifth surface 36a and the sixth surface 37a overlap each other in the vertical direction by the inclined surfaces thereof. When the fifth surface 36a and the sixth surface 37a thus overlap each other, the contact portion of the movable portion 36 and the fixed portion 37 becomes a state of extending obliquely. When the contact portion extends obliquely, the path of invasion of the plasma becomes long, and thus the invasion of the plasma into the gap of the movable portion 36 and the fixed portion 37 is suppressed.

[0086] Thus, the expansion of the gap of the movable portion 36 and the fixed portion 37 due to the erosion of the plasma is suppressed, and the electrostatic chuck device 1 can be used for a long period of time. The inclination angle of the fifth surface 36a and the sixth surface 37a with respect to the horizontal direction is preferably set to 45° or less. By setting the inclination angle of the fifth surface 36a and the sixth surface 37a to this range, the plasma is less likely to further invade into the gap of the movable portion 36 and the fixed portion 37.

[0087] The gap pin of the present application is not limited to the embodiment described above. For example, in the gap pin 1 described above, the base portion 2 has a circular shape in plan view. However, the base portion 2 is not limited to a circular shape. For example, the base portion 2 can have an elliptical shape in plan view, or can have a polygonal shape such as a triangular shape, a quadrangular shape, a pentagonal shape, a hexagonal shape, or the like, according to the intended use or the like. The support portion 3 is also not limited to a cylindrical shape. For example, the support portion 3 can be an elliptical cylindrical shape, or can have a prism shape such as a triangular prism shape, a quadrangular prism shape, a pentagonal prism shape, a hexagonal prism shape, or the like, according to the intended use or the like.

[0088] Further, the manufacturing method of the gap pin 1 described above describes a method in which the base portion 2 and the support portion 3 are integrally formed. However, the gap pin of the present application can be manufactured by separately forming the base portion 2 and the support portion 3, and joining the base portion 2 and the support portion 3 after firing. The joining method is not limited, and diffusion joining or the like can be cited as an example.

[0089] Explanation of Reference Numerals

[0090] 1 Gap pin

[0091] 2 Base portion

[0092] 3 support portion

[0093] 3a contact portion

[0094] 10 heat treatment device

[0095] 11 processing chamber

[0096] 12 mounting table

[0097] 12a recess

[0098] 13 top pin

[0099] 14 gate

[0100] 15 working cylinder

[0101] 16 cover

[0102] 17 position-limiting member

[0103] 18 exhaust port

[0104] 19 heater

[0105] 20 holding member

[0106] 21 through hole

[0107] 22 connecting guide

[0108] 23 timing belt

[0109] 24 stepping motor

[0110] 25 driving pulley

[0111] 26 driven pulley

[0112] 30 electrostatic chuck device

[0113] 31 mounting table

[0114] 32 holding portion

[0115] 33 focusing ring

[0116] 34 upper ring

[0117] 35 lower ring

[0118] 36 movable portion

[0119] 36a fifth surface

[0120] 36b opening portion

[0121] 37 fixed portion

[0122] 37a sixth surface

[0123] 38 Top of the line.

Claims

1. A clearance pin, wherein, The clearance pin includes: A base having a first surface and a second surface located on the opposite side of the first surface; and A support portion, located on the first surface, having a third surface opposite to the first surface and a fourth surface located on the opposite side of the third surface and including a contact portion that contacts the supported body. Compared to the second surface, the contact portion has a smaller average root mean square slope (RΔq) in its roughness curve.

2. The clearance pin according to claim 1, wherein, The average value of the root mean square tilt (RΔq) of the second face is above 0.17 and below 0.

48.

3. The clearance pin according to claim 1 or 2, wherein, The difference between the average value of the root mean square tilt (RΔq) of the contact portion and the second surface is greater than 0.

08.

4. The clearance pin according to claim 1 or 2, wherein, The fourth surface is a grinding surface.

5. The clearance pin according to claim 1 or 2, wherein, The fourth surface is the fired surface.

6. The clearance pin according to claim 1 or 2, wherein, The fourth surface is composed of a DLC film.

7. The clearance pin according to claim 6, wherein, The side of the support portion is made of DLC film, and the thickness of the DLC film on the fourth side is greater than the thickness of the DLC film on the side of the support portion.

8. The clearance pin according to claim 1 or 2, wherein, The first surface is made of a DLC film.

9. The clearance pin according to claim 8, wherein, The side surface of the base is made of a DLC film, and the thickness of the DLC film on the first side is greater than the thickness of the DLC film on the side surface of the base.

10. The clearance pin according to claim 1 or 2, wherein, At least one of the support portion and the base portion is made of ceramic with silicon carbide as the main component.

11. A heat treatment apparatus, wherein, The heat treatment apparatus includes a platform and a gap pin as described in any one of claims 1 to 10. The gap pin is provided on the mounting platform in such a way that the supported body is placed on the mounting platform with a gap separated from it.

12. An electrostatic chuck device, wherein, The electrostatic chuck device includes a stage and a focusing ring located around the stage. The focusing ring has: an upper ring having a fixed portion arranged along the circumference and a movable portion arranged concentrically with the fixed portion and capable of displacement in the vertical direction; and a lower ring located below the upper ring. The upper surface of the lower ring is provided with a gap pin as described in any one of claims 1 to 10.

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