Method for compensating overlay errors

Abstract

A method for compensating overlay deviation includes: providing a wafer to be compensated, the wafer to be compensated including a center region and an edge region, the center region having a plurality of first measurement points, and the edge region having a plurality of second measurement points; obtaining a first to-be-compensated deviation of the first measurement points and a second to-be-compensated deviation of the second measurement points; performing first compensation processing on the first measurement points by using a first global compensation model to obtain first compensated information; performing second compensation processing on the second measurement points by using a second global compensation model to obtain second compensated information; and performing third compensation processing on a first residual deviation of each of the first measurement points and a second residual deviation of each of the second measurement points by using a local compensation model to obtain third compensated information. By performing triple refinement compensation on the wafer to be compensated, the first compensated information, the second compensated information and the third compensated information are obtained, and the compensation effect on the wafer to be compensated can be effectively improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a method for compensating for overlay deviations. Background Technology

[0002] Photolithography is a crucial technology in semiconductor manufacturing, enabling the transfer of patterns from a photomask to the surface of a silicon wafer, forming semiconductor products that meet design requirements. In the photolithography process, firstly, through an exposure step, light passes through the transparent or reflective areas of the photomask and illuminates the silicon wafer coated with photoresist, causing a photochemical reaction with the photoresist. Next, through a development step, the solubility of the developer by the photosensitive and unphotosensitive photoresist forms a photolithographic pattern, achieving the transfer of the photomask pattern. Then, through an etching step, the silicon wafer is etched based on the photolithographic pattern formed by the photoresist layer, further transferring the photomask pattern onto the silicon wafer.

[0003] Overlay accuracy (OVL) refers to the precision of the alignment between the current layer pattern and the preceding layer pattern in a photolithography manufacturing process. Since integrated circuit chips are manufactured by stacking multiple circuit layers, the chip will not function properly if the current and preceding layers are not aligned. Therefore, minimizing overlay accuracy and ensuring it remains within acceptable tolerances is extremely important during the formation of the current layer.

[0004] In existing technologies, the overlay accuracy of the current batch of wafers is typically improved through several overlay deviation compensation processes. The overlay deviation compensation process includes: obtaining the wafer to be tested from the previous batch; performing overlay accuracy detection on the wafer to be tested to obtain the overlay accuracy information of the previous batch; obtaining an overlay deviation model based on the overlay accuracy information of the previous batch; and performing overlay deviation compensation on the current batch of wafers based on the overlay deviation model.

[0005] However, there are still many problems with the existing overlay deviation compensation process. Summary of the Invention

[0006] The technical problem solved by this invention is to provide a method for compensating for overlay deviations, so as to improve the compensation effect.

[0007] To solve the above-mentioned technical problems, the present invention provides a method for compensating overlay deviations, comprising: providing a wafer to be compensated, the wafer including a central region and an edge region surrounding the central region, the central region having a plurality of first measurement points, and the edge region having a plurality of second measurement points; acquiring a first deviation to be compensated for the first measurement points and acquiring a second deviation to be compensated for the second measurement points; performing a first compensation process on the first deviation to be compensated for each of the first measurement points using a first global compensation model, so that each of the first measurement points has a first residual deviation, and acquiring first compensated information; after the first compensation process, performing a second compensation process on the second deviation to be compensated for each of the second measurement points using a second global compensation model, so that each of the second measurement points has a second residual deviation, and acquiring second compensated information; after the second compensation process, performing a third compensation process on the first residual deviation of each of the first measurement points and the second residual deviation of each of the second measurement points using a local compensation model, and acquiring third compensated information.

[0008] Optionally, the method for obtaining the first residual deviation of each first measurement point and the second residual deviation of each second measurement point includes: performing a fourth compensation process on the wafer to be compensated using a third global compensation model to obtain the first residual deviation of each first measurement point and the second residual deviation of each second measurement point.

[0009] Optionally, the method for obtaining the first residual deviation of each first measurement point and the second residual deviation of each second measurement point includes: obtaining the first residual deviation of each first measurement point and the second residual deviation of each second measurement point from the wafer to be compensated after the second compensation processing.

[0010] Optionally, the method for obtaining the third compensated information includes: providing a deviation threshold; using a local compensation model to perform a third compensation process on the first residual deviation of each first measurement point and the second residual deviation of each second measurement point until the residual deviation of the first measurement point and the residual deviation of the second measurement point are less than or equal to the deviation threshold, thereby obtaining the third compensated information.

[0011] Optionally, the wafer to be compensated includes: a first front layer, a first etchable layer on the first front layer, and a first photoresist layer on the first etchable layer, wherein the first photoresist layer has undergone exposure and development steps.

[0012] Optionally, the method for obtaining the first deviation to be compensated and the second deviation to be compensated includes: using an overlay accuracy measurement method based on imaging and image recognition to detect the overlay accuracy of the first photoresist layer, and obtaining the first deviation to be compensated and the second deviation to be compensated.

[0013] Optionally, after the third compensation process, the method further includes: performing graphic processing on the wafer to be compensated based on the first compensated information, the second compensated information, and the third compensated information to obtain a compensated wafer.

[0014] Optionally, the method for obtaining the compensation wafer by performing patterning processing on the wafer to be compensated based on the first compensated information, the second compensated information, and the third compensated information includes: removing the first photoresist layer; forming a second photoresist layer on the first etchable layer; generating an exposure menu from the first compensated information, the second compensated information, and the third compensated information; and performing exposure and development processing on the second photoresist layer to obtain the compensation wafer.

[0015] Optionally, after the third compensation process, the method further includes: performing graphical processing on the new batch of wafers based on the first compensated information, the second compensated information, and the third compensated information.

[0016] Optionally, the new batch of wafers includes: a second front layer and a second etchable layer located on the second front layer, wherein the second front layer is the same as the first front layer and the second etchable layer is the same as the first etchable layer.

[0017] Optionally, the method for obtaining a compensated wafer by performing patterning processing on a new batch of wafers based on the first compensated information, the second compensated information, and the third compensated information includes: forming a third photoresist layer on the second etchable layer; generating an exposure menu from the first compensated information, the second compensated information, and the third compensated information; performing exposure and development processing on the third photoresist layer; and obtaining the compensated wafer.

[0018] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0019] The overlay deviation compensation method provided by this invention performs triple refinement compensation on the wafer to be compensated, obtaining the first compensated information, the second compensated information, and the third compensated information respectively. These three compensated information effectively improve the compensation effect on the wafer. Furthermore, a second global compensation model is first used to perform a second compensation process on the second deviation to be compensated at each of the second measurement points. Then, after the second compensation process, a local compensation model is used to perform a third compensation process on the second remaining deviation at each of the second measurement points, effectively reducing the problem of overcompensation at each of the second measurement points. Attached Figure Description

[0020] Figure 1 This is a flowchart illustrating a method for compensating for overlay deviations.

[0021] Figure 2 This is a flowchart illustrating a method for compensating overlay deviation in an embodiment of the present invention.

[0022] Figures 3 to 9 This is a schematic diagram of the structure of each step in the overlay deviation compensation method of this invention. Detailed Implementation

[0023] As described in the background section, there are still many problems with the existing overlay deviation compensation process, which will be explained in detail below.

[0024] Figure 1 This is a flowchart illustrating a method for compensating for overlay deviations.

[0025] Please refer to Figure 1 The compensation method for the overlay deviation includes:

[0026] Step S101: Provide a wafer to be compensated, the wafer to be compensated includes a central region and an edge region surrounding the central region, the central region has a plurality of first measurement points, and the edge region has a plurality of second measurement points;

[0027] Step S102: Obtain the first deviation to be compensated at the first measurement point and the second deviation to be compensated at the second measurement point;

[0028] Step S103: Use the first global compensation model to perform a first compensation process on the first deviation to be compensated for each of the first measurement points, so that each of the first measurement points has a first residual deviation, and obtain the first compensated information.

[0029] Step S104: After the first compensation process, a local compensation model is used to perform a second compensation process on the first remaining deviation of each first measurement point and the second deviation to be compensated of each second measurement point to obtain the second compensated information.

[0030] In this embodiment, the wafer to be compensated is subjected to dual refinement compensation to obtain the first compensated information and the second compensated information, respectively. However, each exposure area of ​​the existing wafer to be compensated has more than 40 measurement points, and each wafer to be compensated has more than 4,000 measurement points in total. It is insufficient to compensate the wafer to be compensated by dual refinement alone. Moreover, directly using a global compensation model to compensate for the second deviation to be compensated for each second measurement point will also produce many overcompensation problems.

[0031] Based on this, the present invention provides a method for compensating overlay deviation. By performing triple refinement compensation on the wafer to be compensated, the first compensated information, the second compensated information, and the third compensated information are obtained respectively. The compensation effect on the wafer to be compensated can be effectively improved by using the first compensated information, the second compensated information, and the third compensated information.

[0032] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0033] Figure 2 This is a flowchart illustrating the compensation method for overlay deviation according to an embodiment of the present invention.

[0034] Please refer to Figure 2 The compensation method for the overlay deviation includes:

[0035] Step S201: Provide a wafer to be compensated, the wafer to be compensated includes a central region and an edge region surrounding the central region, the central region has a plurality of first measurement points, and the edge region has a plurality of second measurement points;

[0036] Step S202: Obtain the first deviation to be compensated at the first measurement point and the second deviation to be compensated at the second measurement point;

[0037] Step S203: Use the first global compensation model to perform a first compensation process on the first deviation to be compensated for each of the first measurement points, so that each of the first measurement points has a first residual deviation, and obtain the first compensated information.

[0038] Step S204: After the first compensation process, the second global compensation model is used to perform a second compensation process on the second deviation to be compensated for each second measurement point, so that each second measurement point has a second residual deviation, and the second compensated information is obtained.

[0039] Step S205: After the second compensation process, a third compensation process is performed on the first residual deviation of each first measurement point and the second residual deviation of each second measurement point using a local compensation model to obtain the third compensated information.

[0040] The steps of the overlay deviation compensation method are described in detail below with reference to the accompanying drawings.

[0041] Figures 3 to 9 This is a schematic diagram of the structure of each step in the overlay deviation compensation method of this invention.

[0042] Please refer to Figure 3 and Figure 4 , Figure 4 yes Figure 3 A schematic cross-sectional view along line AA shows a wafer 100 to be compensated. The wafer 100 includes a central region I and an edge region II surrounding the central region I. The central region I has a plurality of first measurement points a1, and the edge region II has a plurality of second measurement points a2.

[0043] It should be noted that, Figure 3 The central region I in the figure only shows a portion of the first measurement point a1, and the edge region II only shows a portion of the second measurement point a2.

[0044] In this embodiment, the wafer to be compensated 100 includes: a first front layer 101, a first etchable layer 102 located on the first front layer 101, and a first photoresist layer 103 located on the first etchable layer 102, wherein the first photoresist layer 103 has undergone exposure and development steps.

[0045] In this embodiment, the first front layer 101 is the etched pattern layer, and the first photoresist layer 103 is the photoresist layer after exposure and development but before etching. The first photoresist layer 103 serves as a mask for subsequent etching of the first layer to be etched 102.

[0046] In this embodiment, the first front layer 101 includes a plurality of first marking patterns 101a, the first photoresist layer 103 includes a plurality of second marking patterns 103a, and in a direction perpendicular to the surface of the first photoresist layer 103, each first marking pattern 101a corresponds to a second marking pattern 103a. The plurality of first marker patterns 101a and the plurality of second marker patterns 103a serve, on the one hand, as alignment marks between the pattern of the first photoresist layer 103 and the pattern of the first front layer 101 during the exposure and development step of forming the first photoresist layer 103, ensuring that the pattern of the formed first photoresist layer 103 is aligned with the pattern of the first front layer 101. This ensures that when the first etchable layer 102 is subsequently etched using the first photoresist layer 103 as a mask, the pattern formed on the first etchable layer 102 after etching is aligned with the pattern of the first front layer 101. On the other hand, after the first photoresist layer 103 is formed, the marking marks are used to subsequently detect the overlay accuracy of the formed first photoresist layer 103, that is, to detect the degree of offset between each first marker pattern 101a and the corresponding second marker pattern 103a.

[0047] In other embodiments, the first front layer may include only one first marker pattern or may not include the first marker pattern, and the first photoresist layer may include only one second marker pattern or may not include the second marker pattern. If neither the first photoresist layer nor the first front layer includes marker patterns, during the exposure and development process of forming the first photoresist layer, the first photoresist layer is aligned with the first front layer through the photoresist layer pattern, that is, the pattern in the first photoresist layer that has device function or electrical interconnect function.

[0048] In this embodiment, the center of the wafer 100 to be compensated is taken as the origin O, the range of the central region I is 0nm to 140nm, and the range of the edge region II is 140nm to 147nm.

[0049] Please refer to Figure 5 , Figure 5 and Figure 4 With the view direction consistent, obtain the first deviation to be compensated at the first measurement point a1. And obtain the second deviation to be compensated at the second measurement point a2.

[0050] In this embodiment, the first deviation to be compensated is obtained. and the second deviation to be compensated The method includes: using an imaging and image recognition overlay accuracy measurement method to detect the overlay accuracy of the first photoresist layer 103, and obtaining the first deviation to be compensated. and the second deviation to be compensated

[0051] In this embodiment, the overlay accuracy measurement method using imaging and image recognition is used to detect the overlay accuracy of the first photoresist layer 103. This refers to detecting the overlay accuracy of the second marking pattern 103a in each exposure area of ​​the wafer to be compensated 100. That is, by measuring the offset direction and magnitude of the second marking pattern 103a relative to the corresponding first marking pattern 101a in a direction parallel to the surface of the first photoresist layer 103, the first deviation to be compensated can be obtained. and the second deviation to be compensated

[0052] In other embodiments, the overlay accuracy of the first photoresist layer can also be detected by a diffraction-based overlay (DBO) method to obtain the first deviation to be compensated and the second deviation to be compensated.

[0053] Please refer to Figure 6 The first global compensation model is used to compensate for the first deviation of each of the first measurement points a1. Perform a first compensation process to ensure that each of the first measurement points a1 has a first residual bias. Obtain the first compensated information.

[0054] In this embodiment, the first global compensation model is a 140nm global model.

[0055] In this embodiment, due to the first deviation to be compensated at the first measurement point a1 The first global compensation model cannot compensate for all of them. Therefore, after the first compensation process, each of the first measurement points a1 will still have a first residual bias. The first residual deviation That is, to compensate for the first deviation The remaining deviation after certain compensation.

[0056] In this embodiment, the first compensated information is the information about the first deviation to be compensated. The amount that has been compensated is a set of vectors on the wafer 100 to be compensated that can be represented by a function.

[0057] It should be noted that the direction and magnitude of the vector are the offset direction and offset magnitude of the second mark pattern 103a relative to the corresponding first mark pattern 101a.

[0058] Please refer to Figure 7After the first compensation process, a second global compensation model is used to perform a second compensation process on the second deviation to be compensated for each of the second measurement points a2, so that each of the second measurement points a2 has a second residual deviation. Obtain the second compensated information.

[0059] In this embodiment, the second global compensation model is a 147nm global model.

[0060] In this embodiment, due to the second deviation to be compensated at the second measurement point a2 The second global compensation model cannot compensate for all of them. Therefore, after the second compensation process, each of the second measurement points a2 will still have a second residual bias. Second residual deviation That is, to compensate for the second deviation The remaining deviation after certain compensation.

[0061] In this embodiment, the second compensated information is the information regarding the second deviation to be compensated. The amount that has been compensated is a set of vectors on the wafer 100 to be compensated that can be represented by a function.

[0062] It should be noted that the direction and magnitude of the vector are the offset direction and offset magnitude of the second mark pattern 103a relative to the corresponding first mark pattern 101a.

[0063] Please refer to Figure 8 After the second compensation process, a local compensation model is used to calculate the first residual deviation for each of the first measurement points a1. and the second residual deviation at each of the second measurement points a2 Perform third-party compensation processing to obtain third-party compensation information.

[0064] In this embodiment, by performing triple refinement compensation on the wafer to be compensated, the first compensated information, the second compensated information, and the third compensated information are obtained respectively. These three compensated information effectively improve the compensation effect on the wafer. Furthermore, a second global compensation model is first used to perform a second compensation process on the second deviation to be compensated at each of the second measurement points. Then, after the second compensation process, a local compensation model is used to perform a third compensation process on the second remaining deviation at each of the second measurement points. This effectively reduces the problem of overcompensation at each of the second measurement points.

[0065] In this embodiment, the local compensation model is a 147nm local compensation model.

[0066] In this embodiment, the local compensation model is a model that performs independent correction-per-exposure (CPE) for each exposure area. In existing overlay misalignment compensation processes, whether linear or higher-order corrections, it is based on the assumption that the misalignment between the photoresist pattern and the wafer reference layer pattern can be described by a certain mathematical model. However, in reality, the causes of overlay errors are diverse and often cannot be described by a single set of mathematical parameters. To address this, a model that independently corrects each exposure area has emerged.

[0067] The compensation process of the model that independently corrects each exposure area can be summarized as follows: Similarly, by measuring the overlay error of the exposure area, the correction parameters for each exposure area are obtained using the correction model (either a linear correction model or a higher-order correction model is used depending on the requirements); the lithography machine applies its corresponding correction parameters to each exposure area, which can be superimposed on the linear correction. Compared to linear and higher-order correction models, the model that independently corrects each exposure area has higher overlay accuracy and greater versatility.

[0068] In this embodiment, the method for obtaining the third compensated information includes: providing a deviation threshold. The first residual deviation of each first measurement point a1 is calculated using a local compensation model. and the second residual deviation at each of the second measurement points a2 A third compensation process is performed until the remaining deviation of the first measurement point a1 and the remaining deviation of the second measurement point a2 are less than or equal to the deviation threshold. Until then, the third compensated information is obtained.

[0069] In this embodiment, the third compensated information is a sum of several of the first remaining deviations. and several second residual deviations The amount that has been compensated is a set of vectors on the wafer 100 to be compensated that can be represented by a function.

[0070] It should be noted that the direction and magnitude of the vector are the offset direction and offset magnitude of the second mark pattern 103a relative to the corresponding first mark pattern 101a.

[0071] In this embodiment, the first residual deviation of each of the first measurement points a1 is obtained. and the second residual deviation at each of the second measurement points a2 The method includes: using a third global compensation model to perform a fourth compensation process on the wafer 100 to be compensated, and obtaining the first residual deviation for each of the first measurement points a1. and the second residual deviation at each of the second measurement points a2

[0072] In this embodiment, the third global compensation model is a 147nm global model.

[0073] In other embodiments, the method for obtaining the first residual deviation of each first measurement point and the second residual deviation of each second measurement point may further include: obtaining the first residual deviation of each first measurement point and the second residual deviation of each second measurement point from the wafer to be compensated after the second compensation processing.

[0074] Please refer to Figure 9 , Figure 9 and Figure 4 The view direction is consistent. After the third compensation process, the method further includes: performing graphical processing on the wafer to be compensated 100 according to the first compensated information, the second compensated information and the third compensated information to obtain the compensation wafer.

[0075] In this embodiment, the method for obtaining the compensation wafer by performing patterning processing on the wafer 100 to be compensated based on the first compensated information, the second compensated information, and the third compensated information includes: removing the first photoresist layer 103; forming a second photoresist layer 104 on the first etchable layer 102; generating an exposure menu from the first compensated information, the second compensated information, and the third compensated information; and performing exposure and development processing on the second photoresist layer 104 to obtain the compensation wafer.

[0076] In other embodiments, after the third compensation process, the method further includes: performing patterning processing on the new batch of wafers based on the first compensated information, the second compensated information, and the third compensated information.

[0077] The new batch of wafers includes: a second front layer and a second etchable layer located on the second front layer, wherein the second front layer is the same as the first front layer and the second etchable layer is the same as the first etchable layer.

[0078] It should be noted that "the second front layer is the same as the first front layer" means that the first and second front layers have undergone the same semiconductor manufacturing process, and that the materials and structures of the first and second front layers are identical; "the second etchable layer is the same as the first etchable layer" means that the materials, thicknesses, etc., of the second etchable layer and the first etchable layer are identical. In other words, the new batch of wafers needs to be consistent with the wafers to be compensated.

[0079] The method for obtaining a compensated wafer by performing patterning processing on a new batch of wafers based on the first compensated information, the second compensated information, and the third compensated information includes: forming a third photoresist layer on the second etchable layer; generating an exposure menu from the first compensated information, the second compensated information, and the third compensated information; performing exposure and development processing on the third photoresist layer; and obtaining the compensated wafer.

[0080] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for compensating for overprinting deviation, characterized in that, include: A wafer to be compensated is provided, the wafer to be compensated includes a central region and an edge region surrounding the central region, the central region having a plurality of first measurement points and the edge region having a plurality of second measurement points; Obtain the first deviation to be compensated at the first measurement point, and obtain the second deviation to be compensated at the second measurement point; A first global compensation model is used to perform a first compensation process on the first deviation to be compensated for each of the first measurement points, so that each of the first measurement points has a first residual deviation, and the first compensated information is obtained. After the first compensation process, the second global compensation model is used to perform a second compensation process on the second deviation to be compensated for each second measurement point, so that each second measurement point has a second residual deviation and the second compensated information is obtained. After the second compensation process, a third compensation process is performed on the first residual deviation of each first measurement point and the second residual deviation of each second measurement point using a local compensation model to obtain third compensated information; wherein... The method for obtaining the third compensated information includes: providing a deviation threshold; using a local compensation model to perform a third compensation process on the first residual deviation of each first measurement point and the second residual deviation of each second measurement point until the residual deviation of the first measurement point and the residual deviation of the second measurement point are less than or equal to the deviation threshold, and obtaining the third compensated information. A local compensation model is used to perform a third compensation process on the second residual deviation of each second measurement point in order to reduce overcompensation of each second measurement point.

2. The method for compensating overprinting deviation as described in claim 1, characterized in that, The method for obtaining the first residual deviation of each first measurement point and the second residual deviation of each second measurement point includes: performing a fourth compensation process on the wafer to be compensated using a third global compensation model to obtain the first residual deviation of each first measurement point and the second residual deviation of each second measurement point.

3. The method for compensating overprinting deviation as described in claim 1, characterized in that, The method for obtaining a first residual deviation for each of the first measurement points and a second residual deviation for each of the second measurement points includes: obtaining a first residual deviation for each of the first measurement points and a second residual deviation for each of the second measurement points from the wafer to be compensated after the second compensation processing.

4. The method for compensating overprinting deviation as described in claim 1, characterized in that, The wafer to be compensated includes: a first front layer, a first etchable layer on the first front layer, and a first photoresist layer on the first etchable layer, wherein the first photoresist layer has undergone exposure and development steps.

5. The method for compensating overprinting deviation as described in claim 4, characterized in that, The method for obtaining the first deviation to be compensated and the second deviation to be compensated includes: using an overlay accuracy measurement method based on imaging and image recognition to detect the overlay accuracy of the first photoresist layer, and obtaining the first deviation to be compensated and the second deviation to be compensated.

6. The method for compensating overprinting deviation as described in claim 4, characterized in that, After the third compensation process, the method further includes: performing graphic processing on the wafer to be compensated based on the first compensated information, the second compensated information, and the third compensated information to obtain the compensated wafer.

7. The method for compensating overprinting deviation as described in claim 6, characterized in that, The method for obtaining a compensated wafer by performing patterning processing on the wafer to be compensated based on the first compensated information, the second compensated information, and the third compensated information includes: removing the first photoresist layer; forming a second photoresist layer on the first etchable layer; generating an exposure menu from the first compensated information, the second compensated information, and the third compensated information; and performing exposure and development processing on the second photoresist layer to obtain the compensated wafer.

8. The method for compensating overprinting deviation as described in claim 4, characterized in that, Following the third compensation process, the method further includes: performing graphical processing on the new batch of wafers based on the first compensated information, the second compensated information, and the third compensated information.

9. The method for compensating overprinting deviation as described in claim 8, characterized in that, The new batch of wafers includes: a second front layer and a second etchable layer located on the second front layer, wherein the second front layer is the same as the first front layer and the second etchable layer is the same as the first etchable layer.

10. The method for compensating overprinting deviation as described in claim 9, characterized in that, The method for obtaining a compensated wafer by performing patterning processing on a new batch of wafers based on the first compensated information, the second compensated information, and the third compensated information includes: forming a third photoresist layer on the second etchable layer; generating an exposure menu from the first compensated information, the second compensated information, and the third compensated information; performing exposure and development processing on the third photoresist layer; and obtaining the compensated wafer.

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