Detection unit and substrate processing apparatus comprising the same

Abstract

A substrate processing apparatus includes a support unit configured to support and rotate a substrate in a processing space, a liquid supply unit configured to supply a liquid to the substrate supported by the support unit, a laser unit including a laser irradiation unit configured to irradiate a laser to the substrate supported by the support unit, an initial port providing a standby position where the laser unit waits, and a movement unit for moving the laser unit between a process position where the laser is irradiated to the substrate and the standby position, wherein the initial port detects a characteristic of the laser from the laser irradiated by the laser unit.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0189865, filed with the Korean Intellectual Property Office on December 28, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a detection unit and a substrate processing apparatus including the detection unit, and more specifically, to a detection unit for detecting optical properties and a substrate processing apparatus including the detection unit. Background Technology

[0004] Photolithography processes used to form patterns on wafers include exposure processes. Exposure is a preliminary operation used to scrape the semiconductor integrated material adhered to the wafer into a desired pattern. Exposure processes can have various purposes, such as forming patterns for etching and forming patterns for ion implantation. In exposure processes, patterns are drawn on the wafer using light by using a mask, which acts as a "framework." When the semiconductor integrated material on the wafer (e.g., a photoresist on the wafer) is exposed to light, the chemical properties of the photoresist change according to the light and the pattern of the mask. When a developer is supplied to the photoresist, whose chemical properties change according to the pattern, a pattern is formed on the wafer.

[0005] To perform the exposure process accurately, the patterns formed on the mask need to be precisely fabricated. It is necessary to check whether the patterns are formed satisfactorily under the required process conditions. A large number of patterns are formed on a single mask. Therefore, to inspect a mask, the operator needs to spend a significant amount of time inspecting all the numerous patterns. Thus, a monitoring pattern capable of representing a group of patterns comprising multiple patterns is formed on the mask. Furthermore, anchor patterns capable of representing multiple groups of patterns are formed on the mask. The operator can estimate the quality of the patterns included in a group of patterns by inspecting the monitoring pattern. Additionally, the operator can estimate the quality of the patterns formed on the mask by inspecting the anchor patterns.

[0006] Furthermore, to improve the inspection accuracy of the mask, it is preferable that the critical dimensions of the monitoring pattern and the anchoring pattern are the same. Additionally, a critical dimension correction process is performed to accurately correct the linewidth of the pattern formed on the mask.

[0007] Figure 1This diagram illustrates the normal distribution of the first critical dimension CDP1 of the monitoring pattern and the second critical dimension CDP2 of the anchoring pattern relative to the mask during the mask manufacturing process, prior to the critical dimension correction process. Furthermore, both the first critical dimension CDP1 and the second critical dimension CDP2 have dimensions smaller than the target critical dimension. Before the critical dimension correction process, there is an intentional deviation in the critical dimension (CD) of the monitoring and anchoring patterns. Then, by additionally etching the anchoring pattern in the critical dimension correction process, the critical dimensions of the two patterns are made the same. When the anchoring pattern is over-etched compared to the monitoring pattern during the additional etching process, the critical dimension of the pattern formed on the mask cannot be accurately corrected due to the difference in critical dimensions between the monitoring and anchoring patterns. Accurate etching of the anchoring pattern is required accompanying the additional etching.

[0008] To accurately etch anchor patterns, precise control of the focal distribution (profile) and power of the light indication information, such as the diameter and intensity of the light, is required. The focal distribution and power of the light significantly affect the amount of pattern etched on the substrate M and the etching uniformity relative to the pattern formed on the substrate M. Typically, to measure the light profile, attenuation filters are installed that either transmit light only in specific wavelength bands or block light in specific wavelength bands. For light passing through attenuation filters, only the relative power value can be estimated, not the absolute power value, thus reducing measurement accuracy. Without precise measurement of the light profile and power, accurate etching of the anchor pattern is impossible. Summary of the Invention

[0009] The present invention aims to provide a detection unit capable of performing precise etching on a substrate and a substrate processing apparatus including the detection unit.

[0010] The present invention also aims to provide a detection unit capable of detecting optical characteristics in a home port and a substrate processing apparatus including the detection unit.

[0011] The present invention also aims to provide a detection unit capable of simultaneously measuring the light and light power of light irradiated from an initial port, and a substrate processing apparatus including the detection unit.

[0012] The present invention also aims to provide a detection unit capable of accurately measuring optical properties and a substrate processing apparatus including the detection unit.

[0013] The present invention also aims to provide a detection unit that minimizes measurement interference of light profile caused by refracted or scattered light, and a substrate processing apparatus including the detection unit.

[0014] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings any problems not mentioned.

[0015] An exemplary embodiment of the present invention provides a substrate processing apparatus, the substrate processing apparatus comprising: a support unit configured to support and rotate a substrate in a processing space; a liquid supply unit configured to supply liquid to the substrate supported by the support unit; a laser unit including a laser irradiation unit irradiating the substrate supported by the support unit with laser light; an initial port providing a standby position for the laser unit to wait in; and a moving unit for moving the laser unit between a process position for irradiating the substrate with laser light and a standby position, wherein the initial port detects laser characteristics from the laser light irradiated by the laser unit.

[0016] According to an exemplary embodiment, laser characteristics may include the laser's focal distribution and the laser's power.

[0017] According to an exemplary embodiment, the initial port may include: a housing having an internal space; a profile measuring member mounted in the housing and measuring the focal distribution of the laser; a power measuring member mounted in the housing and measuring the power of the laser; and a beam splitter for splitting the laser beam incident from the upper part of the housing to the profile measuring member and the power measuring member.

[0018] According to an exemplary embodiment, the surface of the beam splitter facing the power measurement component can be coated with anti-reflective coating.

[0019] According to an exemplary embodiment, the contour measuring component can be mounted on the side wall of the housing, the power measuring component can be mounted on the bottom wall of the housing, the beam splitting component can be disposed in the internal space of the housing, the upper surface of the beam splitting component can be formed to be inclined upward relative to the ground at a first angle, and the lower surface of the beam splitting component can be formed to be inclined upward relative to the ground at a second angle, and the second angle can be greater than the first angle.

[0020] According to an exemplary embodiment, a portion of the laser incident from the upper part of the housing can be reflected from the upper surface and incident on the profile measuring member, another portion of the laser incident from the upper part of the housing can be refracted on the upper surface and incident on the lower surface, and the laser incident on the lower surface can be incident on the power measuring member.

[0021] According to an exemplary embodiment, a portion of the laser incident on the power measuring component can be reflected and incident on the beam splitting component, and the laser incident on the beam splitting component can be refracted.

[0022] According to an exemplary embodiment, the substrate processing apparatus may further include a lifting member mounted at the lower end of the initial port to move the housing.

[0023] According to an exemplary embodiment, the profile measuring component may also include a filter for filtering laser light of a specific wavelength.

[0024] Another exemplary embodiment of the present invention provides a detection unit for detecting the optical characteristics irradiated onto a substrate. The detection unit includes: a housing having an internal space; a contour measuring member mounted in the housing and measuring the focal distribution of a laser in the laser characteristics; a power measuring member mounted in the housing and measuring the power of the laser in the laser characteristics; and a beam splitter for splitting laser light incident from the upper part of the housing to the contour measuring member and the power measuring member.

[0025] According to an exemplary embodiment, the contour measuring component can be mounted on the side wall of the housing, the power measuring component can be mounted on the bottom wall of the housing, the beam splitting component can be disposed in the internal space of the housing, and the surface of the beam splitting component facing the power measuring component can be coated with antireflective coating.

[0026] According to an exemplary embodiment, the beam splitter may have an upper surface and a lower surface, each of which is formed to be inclined upward relative to the ground, and the cross-sectional area of ​​the beam splitter may increase from the upper end to the lower end of the beam splitter.

[0027] According to an exemplary embodiment, a portion of the laser incident from the upper part of the housing can be reflected from the upper surface and incident on the profile measuring member, another portion of the laser incident from the upper part of the housing can be refracted on the upper surface and incident on the lower surface, and the laser incident on the lower surface can be incident on the power measuring member.

[0028] According to an exemplary embodiment, a portion of the laser incident on the power measuring component can be reflected and incident on the beam splitting component, and the laser incident on the beam splitting component can be refracted.

[0029] According to an exemplary embodiment, the profile measuring component may also include a filter for filtering laser light of a specific wavelength.

[0030] Another exemplary embodiment of the present invention provides a substrate processing apparatus for processing a mask, the mask comprising a plurality of cells, the substrate processing apparatus comprising: a housing having a processing space; a support unit configured to support and rotate the mask in the processing space; a liquid supply unit configured to supply liquid to the mask supported by the support unit; a laser unit including a laser irradiation unit irradiating the mask supported by the support unit with laser light; an initial port providing a standby position for the laser unit to wait in; and a moving unit for moving the laser unit between a process position for irradiating the mask with laser light and a standby position, wherein the initial port detects laser characteristics from the laser light irradiated by the laser unit.

[0031] According to an exemplary embodiment, the initial port may include: a housing having an internal space; a profile measuring member mounted in the housing and measuring the focal distribution in the laser characteristics; a power measuring member mounted in the housing and measuring the power in the laser characteristics; and a beam splitter for splitting the laser beam incident from the upper part of the housing to the profile measuring member and the power measuring member.

[0032] According to an exemplary embodiment, the contour measuring component can be mounted on the side wall of the housing, the power measuring component can be mounted on the bottom wall of the housing, and the beam splitting component can be disposed in the internal space of the housing.

[0033] According to an exemplary embodiment, the upper surface of the beam splitter can be formed to be inclined upward relative to the ground at a first angle, and the lower surface of the beam splitter can be formed to be inclined upward relative to the ground at a second angle, the second angle being greater than the first angle, and the surface of the beam splitter facing the power measurement component can be coated with antireflective coating.

[0034] According to an exemplary embodiment, the substrate processing apparatus may further include a lifting member mounted at the lower end of the initial port to move the housing, wherein the contour measuring member may further include a filter comprising laser light for filtering a specific wavelength.

[0035] According to an exemplary embodiment of the present invention, precise etching can be performed on the substrate.

[0036] Furthermore, according to an exemplary embodiment of the present invention, optical characteristics in the initial port can be detected.

[0037] Furthermore, according to an exemplary embodiment of the present invention, the profile and power of the light can be detected from the illumination light in the initial port.

[0038] Furthermore, according to an exemplary embodiment of the present invention, the properties of light can be measured accurately.

[0039] Furthermore, according to an exemplary embodiment of the present invention, measurement interference with the optical profile caused by refracted or scattered light can be minimized.

[0040] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0041] Figure 1 It is a graph showing the normal distribution of the critical size of the monitoring pattern and the critical scale of the anchoring pattern.

[0042] Figure 2 This is a schematic top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0043] Figure 3 It schematically shows the view from above. Figure 2 A diagram of a substrate being processed in a liquid processing chamber.

[0044] Figure 4 It is shown schematically. Figure 2 A figure of an exemplary embodiment of a liquid handling chamber.

[0045] Figure 5 It is viewed from above. Figure 4 A diagram of the liquid handling chamber.

[0046] Figure 6 It schematically shows the view from the front. Figure 4 A diagram of the irradiation module.

[0047] Figure 7 This is a schematic representation of the view from above. Figure 6 A diagram of the irradiation module.

[0048] Figure 8 It is shown schematically. Figure 4 A figure shows an exemplary implementation of the detection unit.

[0049] Figure 9 It schematically shows the view from the front. Figure 8 A diagram of the beam-splitting component.

[0050] Figure 10 It schematically shows the incident light onto... Figure 8 A portion of the light on the upper part of the housing is incident on the state of the profile measuring component.

[0051] Figure 11It schematically shows the incident light onto... Figure 10 A diagram showing the state of another portion of the light on the upper part of the housing incident on the power measuring component.

[0052] Figure 12 It schematically shows the incident light onto... Figure 11 A diagram showing the state of a portion of the light from the power measuring component incident on the beam splitter. Detailed Implementation

[0053] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. Exemplary embodiments of the invention may be modified in various ways, and the scope of the invention should not be construed as limited to the exemplary embodiments described below. Exemplary embodiments are provided to explain the invention more fully to those skilled in the art. Therefore, the shapes of components in the drawings are exaggerated for clearer illustration.

[0054] The terms used herein (including technical and scientific terms) have the same meanings as commonly understood by one of ordinary skill in the art, unless otherwise defined. Terms defined in a general dictionary shall be interpreted as having meanings that correspond to their meanings in the relevant technical context, and should not be construed as having ideal or overly formal meanings unless explicitly defined in this application.

[0055] The appendix will be referenced below. Figures 2 to 12 Exemplary embodiments of the present invention will be described in more detail below. Figure 2 This is a schematic top plan view of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0056] Reference Figure 2 The substrate processing apparatus 1 includes an indexing module 10, a processing module 20, and a controller 30. According to an exemplary embodiment, when viewed from above, the indexing module 10 and the processing module 20 can be arranged in one direction.

[0057] In the following text, the direction in which the index module 10 and the processing module 20 are arranged is defined as the first direction X. When viewed from the front, the direction perpendicular to the first direction X is defined as the second direction Y, and the direction perpendicular to the plane that includes both the first direction X and the second direction X is defined as the third direction Z.

[0058] The indexing module 10 transfers the substrate M from the container C in which the substrate M is housed to the processing module 20 that processes the substrate M. Furthermore, the indexing module 10 houses the substrate M, which has undergone predetermined processing in the processing module 20 within the container C. The longitudinal direction of the indexing module 10 can be formed in a second direction Y. The indexing module 10 may have a loading port 12 and an index frame 14.

[0059] A container C containing the substrate M sits on the loading port 12. The loading port 12 can be located on the opposite side of the processing module 20 relative to the index frame 14. Multiple loading ports 12 can be provided. The multiple loading ports 12 can be arranged in a line along the second direction Y. The number of loading ports 120 can be increased or decreased depending on the processing efficiency of the processing module 20 and the available floor space.

[0060] As container C, an airtight container such as a front-opening unified pod (FOUP) can be used. Container C can be placed on loading port 12 by a conveying device (not shown) or by an operator, such as an overhead conveyor, overhead conveyor, or automated guided vehicle.

[0061] The index frame 14 provides a transport space for transporting the substrate M. The index frame 14 is equipped with an indexing robot 120 and a cable guide rail 124. The indexing robot 120 transports the substrate M. The indexing robot 120 can transport the substrate M between the indexing module 10 and the buffer unit 200 (described later). The indexing robot 120 includes an indexing hand 122. The substrate M can be placed on the indexing hand 122. The indexing hand 122 can be configured to be forward and backward movable, rotatable about a third direction Z, and movable in the third direction Z. Multiple hands 122 can be provided. The multiple indexing hands 122 can be configured to be spaced apart from each other in the vertical direction. The multiple hands 122 can move forward and backward independently of each other.

[0062] The cable guide rail 124 is disposed within the index frame 14. The longitudinal direction of the cable guide rail 124 is set along the second direction Y. The indexing robot 120 is placed on the index rail 124, and the indexing robot 120 can be configured to be movable along a straight line on the cable guide rail 124.

[0063] The controller 30 can control the substrate processing apparatus 1. The controller 30 can control the components disposed on the substrate processing apparatus 1. The controller 30 may include a process controller, a user interface, a display, and a storage unit. The process controller is composed of a microprocessor (computer) that executes control of the substrate processing apparatus. The user interface is composed of a keyboard on which the operator performs command input operations to manage the substrate processing apparatus. The display is used to visualize and display the operating status of the substrate processing apparatus. The storage unit stores control programs for executing processes performed in the substrate processing apparatus under the control of the process controller, or programs (i.e., processing schemes) for executing processes in various components according to various data and processing conditions. Furthermore, the user interface and the storage unit can be connected to the process controller. The processing scheme can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a portable hard disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0064] The processing module 20 may include a buffer unit 200, a transfer frame 300, and a liquid processing chamber 400. The buffer unit 200 has a space in which substrates M loaded into and unloaded from the processing module 20 temporarily reside. The transfer frame 300 has a space for transferring substrates M between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500. The liquid processing chamber 400 performs a liquid processing process by supplying liquid to the substrates M to perform liquid processing. The drying chamber 500 performs a drying process to dry the liquid-processed substrates M.

[0065] A buffer unit 200 can be disposed between the index frame 14 and the transfer frame 300. The buffer unit 200 can be located at one end of the transfer frame 300. A slot (not shown) on which the substrate M is placed is disposed inside the buffer unit 200. Multiple slots (not shown) can be provided. The multiple slots (not shown) can be configured to be spaced apart from each other in a third direction 6.

[0066] The front and back of the buffer unit 200 are open. The front is the surface facing the index module 10, and the back is the surface facing the transfer frame 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320 (described below) can access the buffer unit 200 through the back.

[0067] The longitudinal direction of the conveyor frame 300 can be arranged in the first direction X. The liquid processing chamber 400 and the drying chamber 500 can be arranged on both sides of the conveyor frame 300. The liquid processing chamber 400 and the drying chamber 500 can be arranged on one side of the conveyor frame 300. The conveyor frame 300 and the liquid processing chamber 400 can be arranged in the second direction Y. The conveyor frame 300 and the drying chamber 500 can be arranged in the second direction Y.

[0068] According to an exemplary embodiment, the liquid processing chamber 400 can be disposed on both sides of the transfer frame 300. On one side of the transfer frame 300, the liquid processing chamber 400 can be arranged in an A×B manner (each of A and B is a natural number greater than 1) in each of the first directions X and the third direction Z.

[0069] The transfer frame 300 may include a transfer robot 320 and a transfer track 324. The transfer robot 320 transfers a substrate M. The transfer robot 320 transfers the substrate M between the buffer unit 200, the liquid handling chamber 400, and the drying chamber 500. The transfer robot 320 includes a transfer hand 322 on which the substrate M is placed. The substrate M can be placed on the transfer hand 322. The transfer hand 322 may be configured to be movable forward and backward, rotatable about a third direction Z, and movable in the third direction Z. Multiple hands 322 are provided and vertically spaced apart from each other, and the hands 322 can move forward and backward independently of each other.

[0070] The conveyor rail 324 can be disposed inside the conveyor frame 300 along the longitudinal direction of the conveyor frame 300. For example, the longitudinal direction of the conveyor rail 324 can be disposed in the first direction X. The conveyor robot 320 can be placed on the conveyor rail 324, and the conveyor robot 320 can be configured to be movable on the conveyor rail 324.

[0071] Figure 3 It schematically illustrates the view from above. Figure 2 A diagram of a substrate being processed in a liquid processing chamber. The following will refer to... Figure 3 To describe a substrate M processed in a liquid processing chamber 400 according to an exemplary embodiment of the present invention.

[0072] refer to Figure 3The object processed in the liquid processing chamber 400 can be a substrate of any of the following: a wafer, glass, and a photomask. For example, according to an exemplary embodiment of the invention, the substrate M processed in the liquid processing chamber 400 can be a photomask, which is a "frame" used in the exposure process. The substrate M can have a quadrilateral shape. The substrate M can be a photomask, which is a "frame" used in the exposure process. At least one reference mark AK can be marked on the substrate M. For example, multiple reference marks AK can be formed in each edge region of the substrate M. The reference mark AK can be a mark for aligning the substrate M, called an alignment key. In addition, the reference mark AK can be a mark for obtaining positional information of the substrate M. For example, the imaging unit 4550 (described later) can acquire an image by photographing the reference mark AK and transmit the acquired image to the controller 30. The controller 30 can analyze the image including the reference mark AK to detect the exact position of the substrate M. In addition, the reference mark AK can be used to determine the position of the substrate M when the substrate M is transported.

[0073] Cells CE can be formed on substrate M. At least one cell CE can be formed. For example, multiple cells CE can be formed. Multiple patterns can be formed in each of the multiple cells CE. The pattern formed in each cell CE can be defined as a pattern group. The pattern formed in each cell CE may include an exposure pattern EP and a first pattern P1.

[0074] An exposure pattern EP can be used to form an actual pattern on a substrate M. A first pattern P1 can be a representative pattern of the exposure pattern EP formed in a single cell CE. Furthermore, when multiple cells CE are provided, multiple first patterns P1 can be provided. For example, each of the multiple cells CE can have a first pattern P1. However, the invention is not limited to this; multiple first patterns P1 can be formed in a single cell CE. The first pattern P1 can have a shape that combines portions of the corresponding exposure pattern EP. The first pattern P1 can also be referred to as a monitoring pattern. The average critical dimension of multiple first patterns P1 can be referred to as a Critical Dimension Monitoring Macro (CDMM).

[0075] When an operator examines the first pattern P1 formed in any cell CE using a scanning electron microscope (SEM), the shape of the exposure pattern EP formed in any cell CE can be evaluated to determine if it is satisfactory. Therefore, the first pattern P1 can be used as a pattern for inspection. Unlike the example above, the first pattern P1 can be any of the exposure patterns EP involved in the actual exposure process. Alternatively, the first pattern P1 can be both a pattern used for inspection and an exposure pattern involved in the actual exposure.

[0076] The second pattern P2 can be a representative pattern of the exposure pattern EP formed on the entire substrate M. For example, the second pattern P1 can have a shape that combines portions of the corresponding first pattern P1.

[0077] When the operator inspects the second pattern P2 using SEM, they can assess whether the shape of the exposure pattern EP formed on a substrate M is satisfactory. Therefore, the second pattern P2 can be used as an inspection pattern. The second pattern P2 can be an inspection pattern that does not participate in the actual exposure process. The second pattern P2 can be a pattern used to set the process conditions of the exposure apparatus. The second pattern P2 can be referred to as an anchoring pattern.

[0078] Hereinafter, a liquid processing chamber 400 according to an exemplary embodiment of the present invention will be described in detail. Furthermore, the present invention will be described below based on the following embodiment in which the processing performed in the liquid processing chamber 400 is fine critical dimension correction (FCC) in the process of manufacturing a mask for an exposure process.

[0079] The substrate M loaded into and processed in the liquid processing chamber 400 may be a substrate on which pretreatment has been performed. The critical dimensions of the first pattern P1 and the second pattern P2 of the substrate M loaded into the liquid processing chamber 400 may be different from each other. According to an exemplary embodiment, the critical dimension of the first pattern P1 may be relatively larger than the critical dimension of the second pattern P2. For example, the critical dimension of the first pattern P1 may have a first width (e.g., 69 nm), while the critical width of the second pattern P2 may have a second width (e.g., 68.5 nm).

[0080] Figure 4 It is shown schematically. Figure 2 A figure of an exemplary embodiment of a liquid handling chamber. Figure 5 It is viewed from above. Figure 4 A diagram of the liquid handling chamber. See also... Figure 4 and Figure 5The liquid processing chamber 400 includes a housing 410, a support unit 420, a processing container 430, a liquid supply unit 440, an irradiation module 450, and an initial port 460.

[0081] The housing 410 has a space within it. A support unit 420, a processing container 430, a liquid supply unit 440, an irradiation module 450, an initial port 460, and a lifting member 470 can be disposed within the internal space of the housing 410. The housing 410 may be provided with an inlet (not shown) through which the substrate M can be loaded and removed. The inner wall surface of the housing 410 may be coated with a material highly resistant to chemicals supplied by the liquid supply unit 440.

[0082] A discharge port (not shown) may be formed in the bottom surface of the housing 410. The discharge port (not shown) may be connected to a discharge member (e.g., a pump) capable of discharging gas from the interior space of the housing 410. Gases and other fumes that may be generated in the interior space of the housing 410 may be discharged to the outside of the housing 410 through the discharge port (not shown).

[0083] Support unit 420 supports substrate M. Support unit 420 can support substrate M in the processing space provided by processing container 430 (described later). Support unit 420 rotates substrate M. Support unit 420 may include body 421, support pin 422, support shaft 426 and drive member 427.

[0084] The body 421 can be configured as a plate shape. The body 421 can have a plate shape with a predetermined thickness. When viewed from above, the body 421 can have an upper surface that is generally circular. The upper surface of the body 421 can have a relatively larger area than the substrate M. A support pin 422 can be installed in the body 421.

[0085] Support pin 422 supports substrate M. When viewed from above, support pin 422 may be generally circular. When viewed from above, support pin 422 may have a shape in which a portion corresponding to a corner region of substrate M is recessed downwards. Support pin 422 may have a first surface and a second surface. For example, the first surface may support the lower part of an edge region of substrate M. The second surface may face the side of the edge region of substrate M. Therefore, when substrate M rotates, the lateral movement of substrate M may be limited by the second surface.

[0086] At least one support pin 422 may be provided. For example, multiple support pins 422 may be provided. The number of support pins 422 may be set to correspond to the number of edge regions of the substrate M having a quadrilateral shape. The support pins 422 may support the substrate M such that the lower surface of the substrate M and the upper surface of the body 421 are spaced apart from each other.

[0087] Support shaft 426 is connected to body 421. Support shaft 426 is located below body 421. Support shaft 426 can be a hollow shaft. Fluid supply line 428 can be formed inside the hollow shaft. Fluid supply line 428 can supply processing fluid and / or processing gas to the lower part of substrate M. For example, the processing fluid can include chemicals or rinsing solutions. The chemicals can be liquids with acidic or alkaline properties. The rinsing solution can be pure water. For example, the processing gas can be an inert gas. The processing gas can dry the lower part of substrate M. However, unlike the above embodiment, fluid supply line 428 may not be provided inside support shaft 426.

[0088] The support shaft 426 can be rotated by the drive member 427. The drive member 427 can be a hollow motor. When the drive member 427 rotates the support shaft 426, the body 421 connected to the support shaft 426 can rotate. The base plate M can rotate with the rotation of the body 421 via the support pin 422.

[0089] The processing container 430 has an internal space. The processing container 430 has a processing space in which a substrate is processed. According to an embodiment, the processing container 430 may have a processing space with an open top. The processing container 430 may have a cylindrical shape with an open top. The substrate M can undergo liquid processing and heat treatment in the processing space. The processing container 430 can prevent the processing liquid supplied to the substrate M from splashing onto the housing 410, the liquid supply unit 440, and the irradiation module 450.

[0090] The processing container 340 may have multiple recovery containers 432a, 432b, and 432c. Each of the recovery containers 432a, 432b, and 432c can separate and recover different liquids from the liquid used to process the substrate M. Each of the recovery containers 432a, 432b, and 432c may have a recovery space for recovering the liquid used to process the substrate M. When viewed from above, each of the recovery containers 432a, 432b, and 432c may be arranged in a ring shape around the support unit 420. When performing the liquid processing process, liquid splashed by the rotation of the substrate M is introduced into the recovery space through an inlet formed in the gap between the respective recovery containers 432a, 432b, and 432c. Different types of processing liquids can be introduced into the recovery containers 432a, 432b, and 432c respectively.

[0091] According to an embodiment, the processing container 430 may include a first recycling container 432a, a second recycling container 432b, and a third recycling container 432c. The first recycling container 432a may be configured in an annular shape around the support unit 420. The second recycling container 432b may be configured in an annular shape around the first recycling container 432a. The third recycling container 432c may be configured in an annular shape around the second recycling container 432b.

[0092] Recovery lines 434a, 434b, and 434c, extending vertically downwards from the bottom of recovery containers 432a, 432b, and 432c, can be connected to recovery containers 432a, 432b, and 432c, respectively. Each of the recovery lines 434a, 434b, and 434c can discharge the treated liquid introduced through recovery containers 432a, 432b, and 432c, respectively. The discharged treated liquid can be reused using an external treated liquid regeneration system (not shown).

[0093] The processing container 430 is connected to the lifting member 436. The lifting member 436 can move the processing container 430. For example, the lifting member 436 can change the position of the processing container 430 in the third direction Z. The lifting member 436 can be a drive device for moving the processing container 430 in the vertical direction. When liquid processing and / or heat processing are performed on the substrate M, the lifting member 436 can move the processing container 430 in the upward direction. When the substrate M is loaded into the internal space, or when the substrate M is unloaded from the internal space, the lifting member 436 can move the processing container 430 in the downward direction.

[0094] The liquid supply unit 440 can supply liquid to the substrate M. The liquid supply unit 440 can supply processing liquid for liquid processing of the substrate M. The liquid supply unit 440 can supply processing liquid to the substrate M supported by the support unit 420. For example, the liquid supply unit 440 can supply processing liquid to the substrate M on which a first pattern P1 is formed in a plurality of cells CE and a second pattern P is formed outside the area where the cells CE are formed.

[0095] The processing solution can be either an etching solution or a rinsing solution. The etching solution can be a chemical. The etching solution can etch patterns formed on the substrate M. The etching solution can be called an etchant. The etchant can be a liquid containing hydrogen peroxide and a mixture therein with ammonia, water, and additives. The rinsing solution can clean the substrate M. This rinsing solution can be a known chemical solution.

[0096] See Figure 5The liquid supply unit 440 may include a nozzle 441, a fixture 442, a rotating shaft 443, and a rotating member 444. The nozzle 441 supplies processing liquid to the substrate M supported by the support unit 420. One end of the nozzle 441 may be connected to the fixture 442, and the other end of the nozzle 441 may extend from the fixture 442 toward the substrate M. The nozzle 441 may extend from the fixture 442 in a first direction X. The other end of the nozzle 444 may be bent and extended at a predetermined angle in the direction toward the substrate M supported by the support unit 420.

[0097] Nozzle 441 includes a first nozzle 441a, a second nozzle 441b, and a third nozzle 441c. Any one of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply the chemicals in the treatment liquid. Furthermore, another of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply the rinsing liquid in the treatment liquid. The other of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply chemicals of a different type than those supplied by any one of the first nozzles 441a, the second nozzle 441b, and the third nozzle 441c.

[0098] The fixing body 442 can fix and support the nozzle 441. The fixing body 442 can be connected to the rotating shaft 443, which rotates about a third direction Z via the rotating member 444. When the rotating member 444 rotates the rotating shaft 443, the fixing body 442 can rotate about a third direction Z. Therefore, the discharge port of the nozzle 441 can move between a liquid supply position, which is the position where processing liquid is supplied to the substrate M, and a standby position, which is the position where processing liquid is not supplied to the substrate M.

[0099] Figure 6 It schematically shows the view from the front. Figure 4 A diagram of the irradiation module. Figure 7 This is a schematic representation of the view from above. Figure 6 A diagram of the irradiation module.

[0100] See Figure 6 and Figure 7 The irradiation module 450 can emit light onto the substrate M. For example, the irradiation module 450 can perform heat treatment on the substrate M. In addition, the irradiation module 450 can capture images and / or capture images of the substrate M after heat treatment. The irradiation module 450 may include a housing 4510, a moving unit 4520, a laser unit 4530, and an imaging unit 4540.

[0101] Housing 4510 has mounting space therein. Laser unit 4530 and imaging unit 4540 can be located in the mounting space of housing 4510. For example, laser unit 4530, camera unit 4542, and illumination unit 4544 can be located in the mounting space of housing 4510. Housing 4510 protects laser unit 4530 and imaging unit 4540 from particles, fumes, or sputtered droplets generated during the process.

[0102] An opening may be formed in the lower part of the housing 4510. An irradiation end 4535 (described later) may be inserted into the opening of the housing 4510. When the irradiation end 4535 is inserted into the opening of the housing 4510, one end of the irradiation end 4535 may protrude from the lower end of the housing 4510. For example, a portion of a barrel 4537 (described later) may protrude from the lower end of the housing 4510.

[0103] The moving unit 4520 moves the housing 4510. The moving unit 4520 moves the irradiation end 4535 (described later) via the moving housing 4510. The moving unit 4520 may include a driver 4522, a shaft 4524, and a moving member 4526.

[0104] The driver 4522 can be a motor. The driver 4522 can be connected to the shaft 4524. The driver 4522 can move the shaft 4524 in the vertical direction. The driver 4522 can rotate the shaft 4524. For example, multiple drivers 4522 can be provided. Any one of the multiple drivers 4522 can be configured as a rotary motor for rotating the shaft 4524, and another of the multiple drivers 4522 can be configured as a linear motor for moving the shaft 4524 in the vertical direction.

[0105] Shaft 4524 can be connected to housing 4510. Shaft 4524 can be connected to housing 4510 via movable member 4526. When shaft 4524 rotates, housing 4510 can also rotate. Therefore, the position of irradiation end 4535 (described later) can also be changed. For example, the position of irradiation end 4535 can be changed in the third direction Z. Furthermore, the position of irradiation end 4535 can be changed in the third direction Z, which is a rotation axis.

[0106] When viewed from above, the center of the irradiation end 4535 can be moved in an arc toward the center of the axis 4524. When viewed from above, the center of the irradiation end 4535 can be moved to pass through the center of the substrate M supported by the support unit 420. The irradiation end 4535 can be moved between a process position and a standby position via the moving unit 4520. In the process position, the laser L is irradiated onto the substrate M; in the standby position, the substrate waits without undergoing heat treatment on the substrate M. The initial port 460 (described later) is located in the standby position.

[0107] The movable member 4526 may be disposed between the housing 4510 and the shaft 4524. The movable member 4526 may be an LM guide. The movable member 4526 may move the housing 4510 laterally. The movable member 4526 may move the housing 4510 in a first direction X and / or a second direction Y. The position of the irradiation end 4535 may be varied by the actuator 4522 and the movable member 4526.

[0108] Laser unit 4530 can heat substrate M. Laser unit 4530 can heat substrate M supported by support unit. Laser unit 4530 can heat a portion of substrate M. Laser unit 4530 can heat a specific area of ​​substrate M. Laser unit 4530 can supply chemicals to heat substrate M on which a liquid film is formed. Laser unit 4530 can heat a pattern formed on substrate M. Laser unit 4530 can heat either a first pattern P1 or a second pattern P2. Laser unit 4530 can heat a second pattern P2 between the first pattern P1 and the second pattern P2. According to an exemplary embodiment, laser unit 4530 can heat the second pattern P2 by irradiating with laser L.

[0109] The laser unit 4530 may include a laser irradiation unit 453, a beam expander 4532, a tilting member 4533, a lower reflector 4534, and a lens member 4535. The laser irradiation unit 4531 irradiates a laser L. The laser irradiation unit 4531 can irradiate a laser L having linearity. The laser L irradiated from the laser irradiation unit 4531 can sequentially pass through the lower reflector 4534 and the lens member 4535, which are described below, onto the substrate M. For example, the laser L irradiated from the laser irradiation unit 4531 can sequentially pass through the lower reflector 4534 and the lens member 4535 onto a second pattern P2 formed on the substrate M.

[0110] The beam expander 4532 can control the characteristics of the laser L irradiated from the laser irradiation unit 4531. The beam expander 4532 can adjust the shape of the laser L irradiated from the laser irradiation unit 4531. Furthermore, the beam expander 4532 can adjust the profile of the laser irradiated from the laser irradiation unit 4531. For example, the diameter of the laser L irradiated from the laser irradiation unit 4531 can be changed in the beam expander 4532. The diameter of the laser L irradiated by the laser irradiation unit 4531 can be increased or decreased in the beam expander 4532.

[0111] The tilting member 4533 can tilt the irradiation direction of the laser L irradiated by the laser irradiation unit 4531. The tilting member 4533 can rotate the laser irradiation unit 4531 about an axis. The tilting member 4533 can tilt the irradiation direction of the laser L irradiated by the laser irradiation unit 4531 by rotating the laser irradiation unit 4531. The tilting member 4533 may include a motor.

[0112] The lower reflective member 4534 can change the irradiation direction of the laser L irradiated from the laser irradiation unit 4531. For example, the lower reflective member 4534 can change the irradiation direction of the laser L irradiated in the horizontal direction to a vertically downward direction. For example, the lower reflective member 4534 can change the irradiation direction of the laser L to a direction toward the irradiation end 4535, which will be described below. The laser L refracted by the lower reflective member 4534 can be transmitted to the substrate M or the detection unit 4640 through the lens member 4535 (described later), the substrate being the object to be processed, and the detection unit being disposed inside the initial port 460 (described later).

[0113] When viewed from above, the lower reflective member 4534 can be positioned to overlap with the upper reflective member 4548 (described later). The lower reflective member 4534 can be disposed below the upper reflective member 4548. The lower reflective member 4534 can be tilted at the same angle as the upper reflective member 4548.

[0114] Lens component 4535 may include a lens 4536 and a tube 4537. For example, lens 4536 may be an objective lens. Tube 4537 may be mounted at the lower end of the lens. Tube 4537 may have a generally cylindrical shape. Tube 4537 may be inserted into an opening formed at the lower end of housing 4510. One end of tube 4537 may be positioned to protrude from the lower end of housing 4510.

[0115] Lens component 4535 can be used as an illumination end 4535 through which laser L illuminates the substrate M. Laser L irradiated by laser unit 4530 can also illuminate the substrate M through illumination end 4535. Image capture by camera unit 4542 can be provided through illumination end 4535. Light irradiated by illumination module 4544 can also be provided through illumination end 4535.

[0116] The imaging unit 4540 can capture images of the laser L irradiated by the laser unit 4530. The imaging unit 4540 can acquire images (e.g., images and / or photographs) of the area irradiated by the laser L from the laser module 4330. The imaging unit 4540 can monitor the laser L irradiated by the laser irradiation unit 4531. The imaging unit 4540 can acquire images and / or videos of the laser L irradiated by the laser irradiation unit 4531.

[0117] The imaging unit 4540 can monitor information about the laser L. For example, the imaging unit 4540 can monitor the diameter information of the laser L. Additionally, the imaging unit 4540 can monitor the center information of the laser L. Furthermore, the imaging unit 4540 can monitor the outline information of the laser L. The imaging unit 4540 may include a camera unit 4542, an illumination unit 4544, and an upper reflective member 4548.

[0118] Camera unit 4542 acquires an image of the laser L irradiated by laser irradiation unit 4531. For example, camera unit 4542 may acquire an image including a point on which the laser L irradiates from laser irradiation unit 4531 illuminates. In addition, camera unit 4542 acquires an image of the substrate M supported by support unit 420.

[0119] Camera unit 4542 can be a camera. The shooting direction of camera unit 4542 in acquiring images can be facing the upper reflective member 4548, which will be described below. Camera unit 4542 can transmit the acquired images to controller 30.

[0120] The illumination unit 4544 can provide light, enabling the camera unit 4542 to acquire images. The illumination unit 4544 may include an illumination member 4545, a first reflector 4546, and a second reflector 4547. The illumination member 4545 illuminates light. The illumination member 4545 provides light. The light provided by the illumination member 4545 can be reflected sequentially along the first reflector 4546 and the second reflector 4547. The light provided by the illumination member 4545 can be reflected from the second reflector 4547 and can be directed towards the upper reflector 4548 (described later).

[0121] The upper reflective member 4548 can change the shooting direction of the camera unit 4542. For example, the upper reflective member 4548 can change the shooting direction of the camera unit 4542 (which is horizontal) to a vertically downward direction. For example, the upper reflective member 4548 can change the shooting direction of the camera unit 4542 to face the illumination end 4535. The upper reflective member 4548 can change the illumination direction of light from the illumination member 4545, which passes through and is transmitted sequentially through the first reflector 4546 and the second reflector 4547, from a horizontal direction to a vertically downward direction. For example, the upper reflective member 4548 can change the illumination direction of light from the illumination unit 4544 to face the illumination end 4535.

[0122] When viewed from above, the upper reflective member 4548 and the lower reflective member 4534 can be positioned to overlap each other. The upper reflective member 4548 can be disposed above the lower reflective member 4534. The upper reflective member 4548 and the lower reflective member 4534 can be tilted at the same angle. The upper reflective member 4548 and the lower reflective member 4534 can be configured such that, when viewed from above, the illumination direction of the laser L illuminated by the laser illumination unit 4531, the image capture direction of the camera unit 4542, and the illumination direction of the light provided by the illumination unit 4544 are coaxial.

[0123] Figure 8 It is shown schematically. Figure 4 A figure shows an exemplary implementation of the detection unit. Figure 9 It schematically shows the view from the front. Figure 8 A diagram of the beam-splitting component. Reference will be made below. Figure 8 and Figure 9 The initial port and detection unit according to an exemplary embodiment of the present invention are described in detail.

[0124] Reference Figure 8 The initial port 460 is located within the internal space of the housing 410. When the irradiation end 4535 is in a standby position via the moving unit 4520, the initial port 460 can be installed in the area below the irradiation end 455. That is, the initial port 460 provides a standby position for the laser unit 4530. The initial port 460 may include the housing 4620 and the detection unit 4640.

[0125] The housing 4620 has mounting space therein. A contour measuring member 4650 (described later) can be mounted on a side surface of the housing 4620. A power measuring member 4660 (described later) can be mounted on the bottom of the housing 4620. A beam splitter 4670 (described later) can be mounted in the internal mounting space of the housing 4620. The upper part of the housing 4620 can be open. When the irradiation end 4535 is in the standby position, the irradiation end 455 can be located above the housing 4620.

[0126] Unlike the description above, the upper part of the housing 4620 is not open, and an opening can be formed in the upper part of the housing 4620. When the irradiation end 4535 is in the standby position, the opening formed in the upper part of the housing 4620 can be formed in the area corresponding to the center of the irradiation end 455.

[0127] The detection unit 4640 is located in the mounting space inside the housing 4620. The detection unit 4640 detects the characteristics of the laser L in the laser L irradiated by the laser unit 4530. The detection unit 4640 may include a profile measuring component 4650, a power measuring component 4660, and a beam splitting component 4670.

[0128] The profile measuring component 4650 is mounted in a mounting space inside the housing 4620. For example, the profile measuring component 4650 may be mounted on a side wall of the housing 4620. The profile measuring component 4650 measures the focal distribution of the laser L in the characteristics of the laser L irradiated from the laser unit 4530. For example, the profile measuring component 4650 can measure the focal distribution of the laser L irradiated by the laser unit 4530 from the first beam L1 split by the beam splitter 4670 (described later).

[0129] Focal distribution can refer to light distribution. Data on the distribution area, intensity, uniformity, or size of laser L can all be obtained from the focal length distribution.

[0130] The profile measuring member 4650 may include an attenuation filter 4652. The attenuation filter 4652 may be configured to allow only wavelengths with a characteristic band to pass through, which are included in the first light L1 split by the beam splitter 4670 (described later). Alternatively, the attenuation filter 4652 may also be configured to reflect only wavelengths with a specific band, which are included in the first light L1 split by the beam splitter 4670. The attenuation filter 4652 may be modified in various ways and provided as a known filter.

[0131] The power measuring component 4660 is installed in the mounting space inside the housing 4620. For example, the power measuring component 4660 may be installed on the bottom wall of the housing 4620. The power measuring component 4660 measures the power of the laser L irradiated by the laser unit 4530. For example, the power measuring component 4660 can measure the power of the laser L irradiated by the laser unit 4530 from the second beam L2 split by the beam splitter 4670 (described later).

[0132] The beam-splitting element 4670 is located in the mounting space inside the housing 4620. The beam-splitting element 4670 is positioned in the mounting space within the housing 4620 by a component (not shown). For example, the beam-splitting element 4670 is located in the mounting space of the housing 4620, but may be spaced apart from the bottom wall and side walls of the housing 4620.

[0133] The beam-splitting member 4670 has an upper surface and a lower surface. When viewed from above, the upper surface of the beam-splitting member 4670 can be formed at a position overlapping with the irradiation end 4535. For example, when viewed from above, the upper surface of the beam-splitting member 4670 can be positioned to overlap with the center of the irradiation end 4535. When viewed from the side, the upper surface of the beam-splitting member 4670 is formed to be inclined. For example, when viewed from the side, the upper surface of the beam-splitting member 4670 can be formed to be inclined upward relative to the ground at a first angle A1.

[0134] The laser L irradiated from the irradiation end 4535 is split into a first beam L1 and a second beam L2 on the upper surface of the beam splitter 4670. According to an exemplary embodiment, the first beam L1 may be light that has been irradiated from the irradiation end 4535 and reflected from the upper surface of the beam splitter 4670. The second beam L2 may be light that has been irradiated from the irradiation end 4535 and refracted on the upper surface of the beam splitter 4670.

[0135] The first angle A1 can be formed such that, at this angle, the first light L1 reflected from the upper surface of the beam splitter 4670 in the laser L irradiated from the irradiation end 4535 can be incident on the contour measuring member 4650.

[0136] The lower surface of the beam-splitting member 4670 is formed to face the power measuring member 4660. When viewed from above, the lower surface of the beam-splitting member 4670 is positioned at an overlap with the power measuring member 4660. When viewed from the side, the lower surface of the beam-splitting member 4670 is formed to be inclined. For example, when viewed from the side, the lower surface of the beam-splitting member 4670 may be formed to be inclined upward relative to the ground at a second angle A2. According to an embodiment, the second angle A2 may be greater than the first angle A1.

[0137] The second angle A2 can be formed such that, at this angle, the second light L2 refracted from the upper surface of the beam splitter 4670 in the laser L irradiated from the irradiation end 4535 is refracted again on the lower surface of the beam splitter 4670 and incident on the power measuring member 4660. Therefore, the beam splitter 4670 can split the laser L incident from the upper part of the housing 4620 into the profile measuring member 4650 and the power measuring member 4660.

[0138] The lower surface of the beam splitter 4670 may be treated with an anti-reflective coating. The laser L may not be reflected from the lower surface of the beam splitter 4670. For example, the laser L may be refracted but not reflected from the lower surface of the beam splitter 4670.

[0139] A lifting member 470 is disposed within the housing 410. The lifting member 470 can be connected to the initial port 460. The lifting member 470 can be mounted on the lower end of the housing 4620. The lifting member 470 changes the position of the housing 4620. For example, the lifting member 470 can move the housing 4620 vertically. The lifting member 470 can move the housing 4620 to a preset height.

[0140] Figure 10 It schematically shows the incident light onto... Figure 8 A portion of the light on the upper part of the housing is incident on the state of the profile measuring component. Figure 11 It schematically shows the incident light onto... Figure 10 A diagram showing the state of another portion of the light on the upper part of the housing incident on the power measuring component. Figure 12 It schematically shows the incident light onto... Figure 11 A diagram showing the state of a portion of the light from the power measuring component incident on the beam splitter.

[0141] In the following text, reference will be made to Figures 10 to 12 A mechanism for detecting the characteristics of laser L irradiated from laser unit 4530 according to an exemplary embodiment of the present invention is described in detail.

[0142] refer to Figure 10 The irradiation end 4535 of the laser unit 4530 can be located in a standby position. The irradiation end 4535 can be located at the top of the initial port 460, which serves as the standby position. The standby position of the irradiation end 4535 can be a position that overlaps with the beam splitter 4670 when viewed from above. After the irradiation end 4535 is positioned in the standby position, the laser unit 4530 irradiates laser L in a direction toward the beam splitter 4670.

[0143] A first light L1, which is part of a laser L irradiating toward the beam splitter 4670, is reflected from the upper surface of the beam splitter 4670 and travels toward the contour measuring member 4650. For example, the first light L1, which is part of a laser L irradiating toward the beam splitter 4670, is reflected from the upper surface of the beam splitter 4670, which is tilted at a first tilt angle D1, and travels toward the contour measuring member 4650.

[0144] The first light beam L1 passes through the attenuation filter 4652 and is incident on the profile measuring member 4650. The focal distribution of the laser L illuminated by the laser unit 4530 can be measured from the first light beam L1 incident on the profile measuring member 4650. That is, the profile of the laser L illuminated by the laser unit 4530 can be measured from the first light beam L1. For example, the profile measuring member 4650 can obtain data from the first light beam L1 for the distribution area of ​​the laser L included in the laser L, the intensity of the laser L, the uniformity of the laser L, or the size of the laser L.

[0145] refer to Figure 11 A second beam L1, which is another part of the laser L irradiating toward the beam splitter 4670, is refracted from the upper surface of the beam splitter 4670 and incident on the lower surface of the beam splitter 4670. The second beam L2, which is incident on the lower surface of the beam splitter 4670, is refracted from the lower surface of the beam splitter 46, which is inclined at a second tilt angle D2, and travels toward the power measuring member 4660.

[0146] The second light L2 is incident on the power measuring component 4660. The power of the laser L irradiated by the laser unit 4530 can be measured from the second light L2 incident on the power measuring component 4660. That is, the absolute value of the power of the laser L irradiated by the laser unit 4530 can be measured by the power measuring component 4660.

[0147] Reference Figure 12 A portion of the second light L2 incident on the power measuring member 4660 can be reflected by the power measuring member 460. In the following text, the light reflected by the power measuring member 460 in the second light L2 incident on the power measuring member 4660 is defined as noise light L3.

[0148] The noise light L3 is reflected by the power measuring member 4660 and travels towards the beam splitter 4670. The noise light L3 is incident on the lower surface of the beam splitter 4670. According to an exemplary embodiment of the invention, since the lower surface of the beam splitter 4670 is coated with a non-reflective material, the noise light L3 is prevented from being reflected again from the lower surface of the beam splitter 4670. Therefore, the noise light L3 is prevented from re-entering the profile measuring member 4650 through the beam splitter 4670. That is, the beam splitter 4670 of the exemplary embodiment of the invention refracts the noise light L3 reflected from the power measuring member 4660 without reflecting it back.

[0149] Furthermore, according to an exemplary embodiment of the present invention, the lower surface of the beam splitter 4670 may be formed with a second tilt angle D2. Therefore, the noise light L3 incident on the lower surface of the beam splitter 4670 is refracted and incident on the upper surface of the beam splitter 4670.

[0150] The position where the noise light L3 is incident on the upper surface of the beam splitter 4670 is different from the position where the laser L irradiated from the irradiation end 4535 is incident on the upper surface of the beam splitter 4670. This is because the lower surface of the beam splitter 4670 according to an exemplary embodiment of the present invention is provided with a second tilt angle D2 that is inclined upward relative to the ground.

[0151] Noise light L3 incident on the upper surface of beam splitter 4670 is refracted on the upper surface of beam splitter 46, which has a first tilt angle D1. The noise light L3 refracted from the upper surface of beam splitter 4670 travels towards the outer region of profile measuring member 4650. The noise light L3 refracted on the upper surface of beam splitter 4670 does not incident on profile measuring member 4650.

[0152] According to the above exemplary embodiment of the present invention, the detection unit 4640 is provided at the initial port 460. When no process processing is performed on the substrate M, the laser unit 4530 waits at this initial port to preferentially detect the characteristics of the laser L required for process processing. Based on the detected characteristics of the laser L, the characteristics of the laser L required for effective processing of the substrate M can be controlled by adjusting the characteristics of the laser L. Therefore, heat treatment can be effectively performed on the substrate M.

[0153] Typically, data on the measured distribution detected from laser L can only assess the relative power value of laser L and cannot be used as an indicator of the absolute power value of laser L. According to embodiments of the present invention, the focal distribution and power of laser L at the initial port 460 can be measured simultaneously. Furthermore, by providing a profile measuring member 4650 for measuring the focal distribution of laser L and a power measuring member 4660 for measuring the power of laser L, the focal distribution and power of laser L can be accurately detected and measured. Therefore, the characteristics of laser L required for the execution process can be precisely controlled by using the measured characteristics of laser L.

[0154] The noise light L3 reflected again from the power measuring member 4660 cannot match the characteristics of the laser L irradiated from the laser unit 4530. That is, the noise light L3 can exhibit characteristics of the laser L distorted by reflection and refraction. In the detection unit 4640 according to an exemplary embodiment of the present invention, the upper and lower surfaces of the beam splitter 4670 are formed to be inclined at different angles, and the lower surface of the beam splitter 4670 is coated with an anti-reflective coating, thereby preventing distorted laser L from incident on the profile measuring member 4650 for measuring the focal distribution of the laser L. Therefore, both the accurate focal distribution and power of the laser L irradiated from the laser unit 4530 can be detected.

[0155] In the above exemplary embodiments of the present invention, as an example, the present invention is described based on the case where the etching rate of the second pattern P2 is improved in a substrate M having a first pattern P1 and a second pattern P2, where the first pattern P1 is a monitoring pattern for monitoring the exposure pattern, and the second pattern P2 is a pattern for setting the processing substrate conditions. However, unlike this, the functions of the first pattern P1 and the second pattern P2 may differ from the functions of the above exemplary embodiments of the present invention. Furthermore, according to the exemplary embodiments of the present invention, only one of the first pattern P1 and the second pattern P2 may be provided, and the etching rate of one pattern provided between the first pattern P1 and the second pattern P2 can be improved. Furthermore, according to the exemplary embodiments of the present invention, the same method can be applied to improve the etching rate of specific areas in a substrate (e.g., a wafer or glass) other than a photomask.

[0156] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, the scope equivalent to the inventive concept disclosed herein, and / or within the scope of the technology or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in the specific fields and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should also be interpreted to include other exemplary embodiments.

Claims

1. A substrate processing apparatus comprising: a support unit configured to support and rotate a substrate in a processing space; a liquid supply unit configured to supply a liquid to the substrate supported by the support unit; a laser unit including a laser irradiation unit that irradiates a laser to the substrate supported by the support unit; an initial port that provides a standby position where the laser unit waits; and a movement unit for moving the laser unit between a process position where the laser is irradiated to the substrate and the standby position, wherein the initial port detects a characteristic of the laser from the laser irradiated by the laser unit, wherein the characteristic of the laser includes a focal point distribution of the laser and a power of the laser, the initial port includes: a housing having an internal space; a profile measurement member installed in the housing and measuring the focal point distribution of the laser; a power measurement member installed in the housing and measuring the power of the laser; and a light splitting member for splitting the laser incident from an upper portion of the housing to the profile measurement member and the power measurement member, a surface of the light splitting member facing the power measurement member is coated with an anti-reflection, the profile measurement member is installed on a side wall of the housing, the power measurement member is installed on a bottom wall of the housing, the light splitting member is disposed in the internal space of the housing, an upper surface of the light splitting member is formed to be inclined upward at a first angle with respect to a ground, and a lower surface of the light splitting member is formed to be inclined upward at a second angle with respect to the ground, and the second angle is greater than the first angle.

2. The substrate processing apparatus according to claim 1, wherein a portion of the laser incident from the upper portion of the housing is reflected from the upper surface and is incident to the profile measurement member, another portion of the laser incident from the upper portion of the housing is refracted on the upper surface and is incident on the lower surface, and the laser incident on the lower surface is incident to the power measurement member.

3. The substrate processing apparatus according to claim 2, wherein a portion of the laser incident to the power measurement member is reflected and is incident to the light splitting member, and the laser incident to the light splitting member is refracted. 4.The substrate processing apparatus of claim 1, further comprising: a lifting member installed at a lower end of the initial port to move the housing.

5. The substrate processing apparatus according to claim 1, wherein the profile measurement member further includes a filter for filtering the laser of a specific wavelength. 6.A detection unit for detecting a characteristic of a laser irradiated to a substrate, the detection unit comprising: a housing having an internal space; a profile measurement member installed in the housing and measuring a focal point distribution of the laser among the characteristics of the laser; a power measurement member installed in the housing and measuring a power of the laser among the characteristics of the laser; and a light splitting member for splitting the laser incident from an upper portion of the housing to the profile measurement member and the power measurement member. a light splitting member for splitting the laser light incident from an upper portion of the housing to the profile measuring member and the power measuring member, wherein the profile measuring member is installed on a side wall of the housing, the power measuring member is installed on a bottom wall of the housing, the light splitting member is disposed in the internal space of the housing, and a surface of the light splitting member facing the power measuring member is coated with an anti-reflection, the light splitting member has an upper surface and a lower surface, each of which is formed to be inclined upward with respect to the ground, and a cross-sectional area of the light splitting member increases from an upper end to a lower end of the light splitting member.

7. The detection unit of claim 6, wherein, a portion of the laser light incident from the upper portion of the housing is reflected from the upper surface and is incident to the profile measuring member, another portion of the laser light incident from the upper portion of the housing is refracted on the upper surface and is incident on the lower surface, and the laser light incident on the lower surface is incident to the power measuring member.

8. The detection unit of claim 7, wherein, a portion of the laser light incident to the power measuring member is reflected and is incident to the light splitting member, and the laser light incident to the light splitting member is refracted.

9. The detection unit of claim 6, wherein, the profile measuring member further includes a light filter for filtering the laser light of a specific wavelength.

10. A substrate processing apparatus for processing a mask including a plurality of unit cells, the substrate processing apparatus comprising: a housing having a processing space; a support unit configured to support and rotate a mask in the processing space; a liquid supply unit configured to supply a liquid to the mask supported by the support unit; a laser unit including a laser irradiation unit that irradiates a laser to the mask supported by the support unit; an initial port that provides a standby position where the laser unit waits; and a movement unit for moving the laser unit between a process position where the laser is irradiated to the mask and the standby position, wherein the initial port detects a characteristic of the laser from the laser irradiated by the laser unit, wherein the initial port includes: a housing having an internal space; a profile measuring member installed in the housing and measuring a focal point distribution among the characteristics of the laser; a power measuring member installed in the housing and measuring a power among the characteristics of the laser; and a light splitting member for splitting the laser light incident from an upper portion of the housing to the profile measuring member and the power measuring member, the profile measuring member is installed on a side wall of the housing, the power measuring member is installed on a bottom wall of the housing, and the light splitting member is disposed in the internal space of the housing, an upper surface of the light splitting member is formed to be inclined upward with respect to the ground at a first angle, and a lower surface of the light splitting member is formed to be inclined upward with respect to the ground at a second angle, the second angle is greater than the first angle, The surface of the light splitting member facing the power measuring member is coated with an anti-reflection layer. 11.The substrate processing apparatus according to claim 10, further comprising: a lifting member installed at a lower end of the initial port to move the housing, The profile measuring member further includes a filter for filtering the laser light of a specific wavelength.

Images