A semiconductor laser element provided with a hydrogen and oxygen dissociation layer

Abstract

The present invention provides a semiconductor laser element provided with a hydrogen and oxygen evolution layer, which relates to the technical field of semiconductor optoelectronic devices. It sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top. A hydrogen and oxygen evolution layer is provided above the upper confinement layer, which is used to adsorb hydrogen atoms and oxygen atoms in the upper confinement layer and desorb them. By means of a heterointerface, the overpotential of the hydrogen and oxygen evolution reaction is reduced, and the reaction kinetics is accelerated. By an electrochemical method, hydrogen atoms and oxygen atoms in the upper confinement layer are adsorbed under an externally applied bias voltage, and the hydrogen atoms and oxygen atoms are efficiently desorbed, reducing the oxidation of Mg on the interface and surface. The mass activity of hydrogen and oxygen evolution is increased by more than 5 times compared with that of traditional Pt / C, forming H2 and O2 to be discharged from the surface, increasing the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser element provided with a hydrogen and oxygen evolution layer. Background Art

[0002] Lasers are widely used in fields such as laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers, and the classification methods are also diverse. The main types include solid-state, gas, liquid, semiconductor, and dye lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes: 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the mW level; 2) The operating current density of lasers reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect; 3) Light-emitting diodes have spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence, while lasers are stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference between the electron transition levels, generating photons that are identical and coherent with the induced photons; 4) The principles are different: Light-emitting diodes generate radiative recombination luminescence when electrons and holes transition to quantum wells or p-n junctions under the action of an external voltage, while lasers require lasing conditions to be met before lasing can occur. It must satisfy the condition of carrier population inversion distribution in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output. Nitride semiconductor lasers have the following problems: 1) The Mg acceptor in p-type semiconductors has a large activation energy and low ionization efficiency. The hole concentration is much lower than the electron concentration, and the hole mobility is much smaller than the electron mobility. Moreover, problems such as the quantum well polarization electric field increasing the hole injection barrier and holes spilling out of the active layer result in uneven hole injection and low efficiency, leading to a serious asymmetry and mismatch between electrons and holes in the quantum well, electron leakage, and carrier delocalization. It is more difficult for holes to transport in the quantum well, uneven carrier injection, uneven gain, and at the same time, the gain spectrum of the laser broadens, and the peak gain decreases, resulting in an increase in the threshold current of the laser and a decrease in the slope efficiency; 2) Intrinsic carbon impurities in p-type semiconductors can compensate for acceptors and destroy the p-type, etc.; the ionization rate of p-type doping is low, and a large number of un-ionized Mg acceptor impurities are one of the main sources of internal optical loss. 3) Problems such as low Mg solubility, high Mg ionization energy, high acceptor activation energy, and low Mg ionization efficiency in the p-type contact layer of traditional nitride semiconductors result in a generally low free hole concentration of less than 5E17cm -3; In particular, the ionization energy of Mg and the acceptor activation energy gradually increase with the increase of the Al component, resulting in a further decrease in the hole density of the electron blocking layer, the upper confinement layer, and the contact layer. After the laser emits light, the carrier concentration in the multi-quantum well active region saturates, the bipolar conductivity effect weakens, and the series resistance of the laser increases, leading to an increase in the laser voltage. SUMMARY OF THE INVENTION

[0003] The object of the present invention is to provide a semiconductor laser element provided with a hydrogen and oxygen evolution layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser element provided with a hydrogen and oxygen evolution layer sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer from bottom to top, and a hydrogen and oxygen evolution layer is provided above the upper confinement layer.

[0005] As a preferred technical solution of the present invention, the hydrogen and oxygen evolution layer is any two or more combinations of Ti3AlC2, RuO2, IRO2, Mo-Co-O, Cu2ZnSnS4, Cu2CdSnS4, Cu2CoSnS4, and Cu2MnSnS4.

[0006] As a preferred technical solution of the present invention, any combination of the hydrogen and oxygen evolution layer includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of binary combinations: Ti3AlC2 / RuO2, Ti3AlC2 / IRO2, Ti3AlC2 / Mo-Co-O, Ti3AlC2 / Cu2ZnSnS4, Ti3AlC2 / Cu2CdSnS4, Ti3AlC2 / Cu2CoSnS4, Ti3AlC2 / Cu2MnSnS4, RuO2 / IRO2, RuO2 / Mo-Co-O, RuO2 / Cu2ZnSnS4, RuO2 / Cu2CdSnS4, RuO2 / Cu2CoSnS4, RuO2 / Cu2MnSnS4, IRO2 / Mo-Co-O, IRO2 / Cu2ZnSnS4, IRO2 / Cu2CdSnS4, IRO2 / Cu2CoSnS4, IRO2 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4, Mo-Co-O / Cu2CdSnS4, Mo-Co-O / Cu2CoSnS4, Mo-Co-O / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4, Cu2ZnSnS4 / Cu2CoSnS4, Cu2ZnSnS4 / Cu2MnSnS4, Cu2CdSnS4 / Cu2CoSnS4, Cu2CdSnS4 / Cu2MnSnS4, Cu2CoSnS4 / Cu2MnSnS4.

[0007] As a preferred technical solution of the present invention, any combination of the hydrogen evolution and oxygen evolution layers includes the following ternary combination of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: Ti3AlC2 / RuO2 / IRO2, Ti3AlC2 / RuO2 / Mo-Co-O, Ti3AlC2 / RuO2 / Cu2ZnSnS4, Ti3AlC2 / RuO2 / Cu2CdSnS4, Ti3AlC2 / RuO2 / Cu2CoSnS4, Ti3AlC2 / RuO2 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O, RuO2 / IRO2 / Cu2ZnSnS4, RuO2 / IRO2 / Cu2CdSnS4, RuO2 / IRO2 / Cu2CoSnS4, RuO2 / IRO2 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4, IRO2 / Mo-Co-O / Cu2CdSnS4, IRO2 / Mo-Co-O / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4.

[0008] As a preferred technical solution of the present invention, any combination of the hydrogen evolution oxygen layer includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of quaternary and quinary combinations: Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O, Ti3AlC2 / RuO2 / IRO2 / Cu2ZnSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2CdSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。

[0009] As a preferred technical solution of the present invention, any combination of the hydrogen and oxygen evolution layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures with six-element, seven-element, and eight-element combinations: Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4,RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。

[0010] As a preferred technical solution of the present invention, the hydrogen and oxygen evolution layer is above the upper confinement layer. Under an externally applied bias voltage and photocatalytic conditions, hydrogen atoms and oxygen atoms in the upper confinement layer are adsorbed by an electrochemical method, and the hydrogen atoms and oxygen atoms are efficiently desorbed. The mass activity ratio of hydrogen and oxygen evolution is increased by more than 5 times compared with the traditional Pt / C, forming H2 and O2 to be discharged from the surface, improving the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

[0011] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0012] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0013] In the solution of the present invention:

[0014] Compared with the prior art, a hydrogen and oxygen evolution layer is provided above the upper confinement layer, which is used to adsorb and desorb hydrogen atoms and oxygen atoms of the upper confinement layer. The overpotential of the hydrogen and oxygen evolution reaction is reduced through the heterojunction interface, and the reaction kinetics is accelerated. At the same time, the strong interface coupling effect regulates the electronic structure, and hydrogen atoms and oxygen atoms in the upper confinement layer are adsorbed under an external bias voltage by an electrochemical method, and the hydrogen atoms and oxygen atoms are efficiently desorbed. The mass activity of hydrogen and oxygen evolution is increased by more than 5 times compared with the traditional Pt / C, forming H2 and O2 to be discharged from the surface, increasing the ionization rate of the p-type doping element of the upper confinement layer and reducing the acceptor activation energy, reducing the oxidation of Mg on the interface and surface, increasing the hole concentration of the upper confinement layer, increasing the Mg solubility and ionization efficiency, increasing the hole concentration injected into the active layer and the electron-hole matching degree, enhancing the peak gain and gain uniformity of the laser element. At the same time, the internal optical loss caused by non-ionized Mg is reduced, the bipolar conduction effect is reduced, the series resistance of the laser element is reduced, the lasing voltage of the laser element is reduced, and the luminous power and slope efficiency of the laser element are increased.

[0015] The effects of this embodiment: The internal optical loss of the laser element decreases from 19.5 cm-1 to 3.4 cm-1, a decrease of 83%. The threshold voltage decreases from 6.4 V to 4.5 V, a decrease of 30%. The slope efficiency increases from 0.75 W / A to 1.64 W / A, an increase of 90%. The optical power increases from 0.76 W to 1.76 W, an increase of 81%.

[0016] BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. is a schematic structural diagram of a semiconductor laser element provided with a hydrogen and oxygen evolution layer according to the present invention.

[0018] Reference signs in the figure:

[0019] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Hydrogen and oxygen evolution layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention.

[0021] Accordingly, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0022] It should be noted that, without conflict, the embodiments in the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0023] Embodiment 1

[0024] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a hydrogen and oxygen analysis layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. Above the upper confinement layer 106, there is a hydrogen and oxygen analysis layer 107 for adsorbing and desorbing hydrogen atoms and oxygen atoms in the upper confinement layer 106.

[0025] The hydrogen and oxygen analysis layer 107 is any one of Ti3AlC2, RuO2, IRO2, Mo-Co-O, Cu2ZnSnS4, Cu2CdSnS4, Cu2CoSnS4, and Cu2MnSnS4.

[0026] The hydrogen and oxygen analysis layer 107 is above the upper confinement layer 106. Under an externally applied bias voltage and photocatalytic conditions, it adsorbs hydrogen atoms and oxygen atoms in the upper confinement layer through an electrochemical method, and efficiently desorbs the hydrogen atoms and oxygen atoms. The mass activity ratio of hydrogen and oxygen analysis is increased by more than 5 times compared with traditional Pt / C, forming H2 and O2 to be discharged from the surface, improving the ionization rate of p-type doping elements in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

[0027] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0028] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0029] Example 2

[0030] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a hydrogen and oxygen evolution layer. The semiconductor laser element provided with a hydrogen and oxygen evolution layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. Above the upper confinement layer 106, there is a hydrogen and oxygen evolution layer 107 for adsorbing and desorbing hydrogen atoms and oxygen atoms in the upper confinement layer 106.

[0031] The hydrogen and oxygen evolution layer 107 is above the upper confinement layer 106. By an electrochemical method, under an externally applied bias voltage and photocatalytic conditions, it adsorbs hydrogen atoms and oxygen atoms in the upper confinement layer and efficiently desorbs the hydrogen atoms and oxygen atoms. The mass activity ratio of hydrogen and oxygen evolution is more than 5 times higher than that of traditional Pt / C, forming H2 and O2 to be discharged from the surface, improving the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

[0032] Any combination of the hydrogen evolution and oxygen evolution layers includes the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: Ti3AlC2 / RuO2, Ti3AlC2 / IRO2, Ti3AlC2 / Mo-Co-O, Ti3AlC2 / Cu2ZnSnS4, Ti3AlC2 / Cu2CdSnS4, Ti3AlC2 / Cu2CoSnS4, Ti3AlC2 / Cu2MnSnS4, RuO2 / IRO2, RuO2 / Mo-Co-O, RuO2 / Cu2ZnSnS4, RuO2 / Cu2CdSnS4, RuO2 / Cu2CoSnS4, RuO2 / Cu2MnSnS4, IRO2 / Mo-Co-O, IRO2 / Cu2ZnSnS4, IRO2 / Cu2CdSnS4, IRO2 / Cu2CoSnS4, IRO2 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4, Mo-Co-O / Cu2CdSnS4, Mo-Co-O / Cu2CoSnS4, Mo-Co-O / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4, Cu2ZnSnS4 / Cu2CoSnS4, Cu2ZnSnS4 / Cu2MnSnS4, Cu2CdSnS4 / Cu2CoSnS4, Cu2CdSnS4 / Cu2MnSnS4, Cu2CoSnS4 / Cu2MnSnS4.

[0033] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0034] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0035] Example 3

[0036] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser element provided with a hydrogen and oxygen evolution layer. The semiconductor laser element provided with a hydrogen and oxygen evolution layer includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in sequence from bottom to top. A hydrogen and oxygen evolution layer 107 is provided above the upper confinement layer 106 for adsorbing and desorbing hydrogen atoms and oxygen atoms of the upper confinement layer 106.

[0037] The hydrogen and oxygen evolution layer 107 is above the upper confinement layer 106. By means of an electrochemical method, under an applied bias voltage and photocatalytic conditions, it adsorbs hydrogen atoms and oxygen atoms in the upper confinement layer and efficiently desorbs the hydrogen atoms and oxygen atoms. The hydrogen and oxygen evolution mass-specific activity is increased by more than 5 times compared with the traditional Pt / C, forming H2 and O2 to be discharged from the surface, improving the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

[0038] Any combination of the hydrogen and oxygen evolution layer 107 includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: Ti3AlC2 / RuO2 / IRO2, Ti3AlC2 / RuO2 / Mo-Co-O, Ti3AlC2 / RuO2 / Cu2ZnSnS4, Ti3AlC2 / RuO2 / Cu2CdSnS4, Ti3AlC2 / RuO2 / Cu2CoSnS4, Ti3AlC2 / RuO2 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O, RuO2 / IRO2 / Cu2ZnSnS4, RuO2 / IRO2 / Cu2CdSnS4, RuO2 / IRO2 / Cu2CoSnS4, RuO2 / IRO2 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4, IRO2 / Mo-Co-O / Cu2CdSnS4, IRO2 / Mo-Co-O / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4.

[0039] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0040] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0041] Example 4

[0042] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a hydrogen and oxygen evolution layer. The semiconductor laser element provided with a hydrogen and oxygen evolution layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. Above the upper confinement layer 106, there is a hydrogen and oxygen evolution layer 107 for adsorbing and desorbing hydrogen atoms and oxygen atoms of the upper confinement layer 106.

[0043] The hydrogen and oxygen evolution layer 107 is above the upper confinement layer 106. By an electrochemical method, under an externally applied bias voltage and photocatalytic conditions, it adsorbs hydrogen atoms and oxygen atoms in the upper confinement layer and efficiently desorbs the hydrogen atoms and oxygen atoms. The mass activity ratio of hydrogen and oxygen evolution is more than 5 times higher than that of traditional Pt / C, forming H2 and O2 to be discharged from the surface, improving the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

[0044] Any combination of the hydrogen evolution and oxygen evolution layer 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of four-element and five-element combinations: Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O, Ti3AlC2 / RuO2 / IRO2 / Cu2ZnSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2CdSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。

[0045] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0046] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0047] Example 5

[0048] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a hydrogen and oxygen evolution layer. The semiconductor laser element provided with a hydrogen and oxygen evolution layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A hydrogen and oxygen evolution layer 107 is provided above the upper confinement layer 106 for adsorbing and desorbing hydrogen atoms and oxygen atoms of the upper confinement layer 106.

[0049] The hydrogen and oxygen evolution layer 107 is above the upper confinement layer 106. By an electrochemical method, under an externally applied bias voltage and photocatalytic conditions, it adsorbs hydrogen atoms and oxygen atoms in the upper confinement layer and efficiently desorbs the hydrogen atoms and oxygen atoms. The mass activity ratio of hydrogen and oxygen evolution is more than 5 times higher than that of traditional Pt / C, forming H2 and O2 to be discharged from the surface, improving the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

[0050] Any combination of the hydrogen evolution and oxygen evolution layer 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures with six, seven, or eight elements: Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。

[0051] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combinations of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0052] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0053] Compared with the prior art, a hydrogen and oxygen evolution layer is provided above the upper confinement layer, which is used to adsorb and desorb hydrogen atoms and oxygen atoms of the upper confinement layer, reduce the overpotential of the hydrogen and oxygen evolution reaction through the heterointerface, and accelerate the reaction kinetics. At the same time, the strong interface coupling effect adjusts the electronic structure, adsorbs hydrogen atoms and oxygen atoms in the upper confinement layer under an external bias voltage by an electrochemical method, and efficiently desorbs the hydrogen atoms and oxygen atoms. The mass activity of hydrogen and oxygen evolution is increased by more than 5 times compared with that of the traditional Pt / C, forming H2 and O2 to be discharged from the surface, increasing the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy, and increasing the hole concentration in the upper confinement layer.

[0054] The above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention. Although this specification has described the present invention in detail with reference to the above respective embodiments, the present invention is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement to the present invention; and all technical solutions and their improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with a hydrogen and oxygen evolution layer, comprising, from bottom to top in sequence, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: Above the upper limiting layer (106), there is a hydrogen and oxygen evolution layer (107) for adsorbing and desorbing hydrogen atoms and oxygen atoms of the upper limiting layer (106). The hydrogen and oxygen evolution layer (107) is any two or more combinations of Ti3AlC2, RuO2, IRO2, Mo-Co-O, Cu2ZnSnS4, Cu2CdSnS4, Cu2CoSnS4, and Cu2MnSnS4.

2. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, Any combination of the hydrogen and oxygen evolution layer (107) includes the following binary combination heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: Ti3AlC2 / RuO2, Ti3AlC2 / IRO2, Ti3AlC2 / Mo-Co-O, Ti3AlC2 / Cu2ZnSnS4, Ti3AlC2 / Cu2CdSnS4, Ti3AlC2 / Cu2CoSnS4, Ti3AlC2 / Cu2MnSnS4, RuO2 / IRO2, RuO2 / Mo-Co-O, RuO2 / Cu2ZnSnS4, RuO2 / Cu2CdSnS4, RuO2 / Cu2CoSnS4, RuO2 / Cu2MnSnS4, IRO2 / Mo-Co-O, IRO2 / Cu2ZnSnS4, IRO2 / Cu2CdSnS4, IRO2 / Cu2CoSnS4, IRO2 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4, Mo-Co-O / Cu2CdSnS4, Mo-Co-O / Cu2CoSnS4, Mo-Co-O / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4, Cu2ZnSnS4 / Cu2CoSnS4, Cu2ZnSnS4 / Cu2MnSnS4, Cu2CdSnS4 / Cu2CoSnS4, Cu2CdSnS4 / Cu2MnSnS4, Cu2CoSnS4 / Cu2MnSnS4.

3. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, Any combination of the hydrogen evolution and oxygen evolution layer (107) includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures: Ti3AlC2 / RuO2 / IRO2, Ti3AlC2 / RuO2 / Mo-Co-O, Ti3AlC2 / RuO2 / Cu2ZnSnS4, Ti3AlC2 / RuO2 / Cu2CdSnS4, Ti3AlC2 / RuO2 / Cu2CoSnS4, Ti3AlC2 / RuO2 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O, RuO2 / IRO2 / Cu2ZnSnS4, RuO2 / IRO2 / Cu2CdSnS4, RuO2 / IRO2 / Cu2CoSnS4, RuO2 / IRO2 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4, IRO2 / Mo-Co-O / Cu2CdSnS4, IRO2 / Mo-Co-O / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。 4. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, Any combination of the hydrogen evolution oxygen layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures of quaternary and quinary combinations: Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O, Ti3AlC2 / RuO2 / IRO2 / Cu2ZnSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2CdSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。 5. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, Any combination of the hydrogen and oxygen evolution layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, and quantum dot structures with six-element, seven-element, and eight-element combinations: Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4, Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2MnSnS4, RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4,Ti3AlC2 / RuO2 / IRO2 / Mo-Co-O / Cu2ZnSnS4 / Cu2CdSnS4 / Cu2CoSnS4 / Cu2MnSnS4。 6. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, The hydrogen and oxygen evolution layer (107) is above the upper confinement layer (106). Under an externally applied bias voltage and photocatalytic conditions, hydrogen atoms and oxygen atoms in the upper confinement layer are adsorbed through an electrochemical method, and efficient desorption of the hydrogen atoms and oxygen atoms is carried out. The mass activity ratio of hydrogen and oxygen evolution is increased by more than 5 times compared with that of traditional Pt / C, forming H2 and O2 to be discharged from the surface, increasing the ionization rate of the p-type doping elements in the upper confinement layer and reducing the acceptor activation energy, reducing the oxidation of Mg at the interface and surface, and increasing the hole concentration in the upper confinement layer.

7. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, The p-type doping elements of the upper confinement layer (106) include elements such as Mg, Li, Zn, Ca, Na, and Ka.

8. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, The lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any multi-element combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

9. The semiconductor laser device provided with a hydrogen and oxygen evolution layer according to claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

Images