Preparation method of thermal barrier coating with magnesium-silicon-cerium-oxygen double ceramic layer structure

Abstract

The present invention is a method for preparing a magnesium-silicon-cerium-oxygen double ceramic layer structure thermal barrier coating, which adopts an electron beam physical vapor deposition process to prepare a single component Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target as raw material, Mg2SiO4 / Mg(Si 0.6 Ce 0.4 )2O6 thermal barrier coating, the method controls the electron gun energy density, filament current, acceleration high voltage, duty cycle, vacuum degree, target material feed rate, O2 gas flow, Ar gas flow, deposition time and other factors of the electron beam physical vapor deposition equipment to prepare a ceramic bottom layer of Mg2SiO4 on the surface of the high temperature alloy, Mg(Si 0.6 Ce 0.4 )2O6 is a double-layer thermal barrier coating with a ceramic top layer. The thermal barrier coating has high-temperature phase stability, sintering resistance, low thermal conductivity, high thermal expansion coefficient, and interface chemical compatibility with the metal bonding layer. It is suitable for use in high-temperature oxidative corrosion environments above 1300°C and can increase the working load-bearing temperature of aircraft engine turbine blade materials.

Description

Technical Field

[0001] The invention discloses a method for preparing a thermal barrier coating with a magnesium-silicon-cerium-oxygen double ceramic layer structure, belonging to a high-temperature protective coating manufacturing technology. Background Art

[0002] As modern aviation gas turbine engines develop towards high thrust-to-weight ratio, high efficiency, low fuel consumption and long life, the operating temperature of hot end components is getting higher and higher. Unprotected high-temperature alloys can hardly meet the harsh service environment of hot end components. Thermal barrier coatings (TBCs) can provide a thermal barrier between the hot air flow and engine components, so that the hot end components form a temperature gradient along the coating thickness direction under high temperature load, reduce the heat transfer of high-temperature gas to the base alloy, make up for the insufficient allowable operating temperature of the base high-temperature alloy components, and extend the service life of the components.

[0003] Among the thermal barrier coating materials currently used, the ceramic layer material is Y2O3 stabilized ZrO2 (YSZ). YSZ is recognized as a standard ceramic thermal insulation coating material with a high thermal expansion coefficient, low thermal conductivity and good thermal shock resistance, but the long-term use temperature cannot exceed 1200°C. Above 1200°C, the non-phase-changing tetragonal phase transforms into tetragonal and cubic phases; during the cooling process, the tetragonal phase transforms into a monoclinic phase, resulting in approximately 4% volume expansion and cracks in the coating, which leads to coating spalling failure and reduces the overall life of the thermal barrier coating.

[0004] Compared with other coating preparation technologies, electron beam physical vapor deposition (EB-PVD) technology has the following advantages: 1) The columnar crystal structure makes the EB-PVD coating have a higher strain tolerance and a longer thermal cycle life of the coating; 2) The coating is denser and has better anti-oxidation and thermal corrosion performance; 3) The interface of the coating is mainly chemically bonded, and the bonding force is significantly enhanced; 4) The surface finish is higher and does not block the cooling gas channel of the blade, which is conducive to maintaining the aerodynamic performance of the blade; 5) There are fewer coating preparation process parameters that need to be controlled, and the structure of the ceramic coating can also be controlled by changing the process parameters. Due to the above advantages, the hot end components working in harsh environments, such as thermal barrier coatings on the working blades of aircraft engines, are currently prepared using EB-PVD technology. EB-PVD technology represents the development direction of higher performance coating preparation technology in the future, and major industrial countries are competing to carry out research on this technology. Summary of the invention

[0005] The present invention is designed to address the above-mentioned existing technical conditions and provides a method for preparing a thermal barrier coating with a magnesium-silicon-cerium-oxygen double ceramic layer structure. The purpose is to make the thermal barrier coating have high-temperature phase stability, sintering resistance, low thermal conductivity, high thermal expansion coefficient, and interface chemical compatibility with the metal bonding layer, so that it is suitable for use in high-temperature oxidative corrosion environments above 1300°C and can increase the working load-bearing temperature of aircraft engine turbine blade materials.

[0006] The objective of the present invention is achieved through the following technical solutions:

[0007] The preparation method of the magnesium-silicon-cerium-oxygen dual-ceramic layer structure thermal barrier coating is suitable for nickel-based single crystal high-temperature alloys. The dual-ceramic layer structure of the thermal barrier coating is Mg2SiO4 / Mg(Si 0.6 Ce 0.4 )2O6, the preparation method of the thermal barrier coating is an electron beam physical vapor deposition process, and the raw material for preparing the thermal barrier coating is a single component of Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target, the composition and weight percentage of the ceramic target are: MgO 42.29%, SiO2 33.63%, CeO2 24.08%, the purity of the ceramic target is greater than 99%, the process gas used for preparing the thermal barrier coating is: O2 gas and Ar gas, the purity of which is greater than 99.999%; the steps of the preparation method of the thermal barrier coating include:

[0008] Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.1×10 4 J / cm 2 ~1.4×10 4 J / cm 2 , filament current 6.4A~7.6A, acceleration high voltage 8.6kV~9.2kV, duty cycle 28%~36%, vacuum degree 2.6×10 -3 Pa~3.4×10 -3 Pa, target feed rate 0.3mm / min~0.7mm / min, O2 gas flow 8mL / min~14mL / min, Ar gas flow 280mL / min~320mL / min, deposition time 180min~210min;

[0009] Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 2.8×10 4 J / cm 2 ~4.2×10 4 J / cm2 , filament current 8.2A~8.8A, accelerating high voltage 10.4kV~11.2kV, duty cycle 44%~56%, vacuum degree 7.2×10 -3 Pa~8.6×10 -3 Pa, target feed rate 1.3mm / min~1.7mm / min, O2 gas flow rate 220mL / min~260mL / min, Ar gas flow rate 31mL / min~39mL / min, deposition time 90min~120min.

[0010] During implementation, the size of the ceramic target is Φ62 mm×200 mm.

[0011] During implementation, the steps of the method for preparing the thermal barrier coating are:

[0012] Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.4×10 4 J / cm 2 , filament current 6.4A, accelerating high voltage 8.6kV, duty cycle 36%, vacuum degree 2.6×10 -3 Pa, target feed rate 0.7 mm / min, O2 gas flow 8 mL / min, Ar gas flow 320 mL / min, deposition time 180 min;

[0013] Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 4.2×10 4 J / cm 2 , filament current 8.8A, accelerating high voltage 10.4kV, duty cycle 56%, vacuum degree 8.6×10 -3 Pa, target feed rate 1.3 mm / min, O2 gas flow rate 260 mL / min, Ar gas flow rate 31 mL / min, deposition time 90 min.

[0014] During implementation, the steps of the method for preparing the thermal barrier coating are:

[0015] Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.1×10 4 J / cm 2 , filament current 7.6A, accelerating high voltage 9.2kV, duty cycle 28%, vacuum degree 3.4×10 -3Pa, target feed rate 0.3 mm / min, O2 gas flow 14 mL / min, Ar gas flow 280 mL / min, deposition time 210 min;

[0016] Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 2.8×10 4 J / cm 2 , filament current 8.2A, accelerating high voltage 11.2kV, duty cycle 44%, vacuum degree 7.2×10 -3 Pa, target feed rate 1.7 mm / min, O2 gas flow rate 220 mL / min, Ar gas flow rate 39 mL / min, deposition time 120 min.

[0017] During implementation, the steps of the method for preparing the thermal barrier coating are:

[0018] Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.25×10 4 J / cm 2 , filament current 7.0A, accelerating high voltage 8.9kV, duty cycle 32%, vacuum degree 3.0×10 - 3 Pa, target feed rate 0.5 mm / min, O2 gas flow 11 mL / min, Ar gas flow 300 mL / min, deposition time 195 min;

[0019] Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 3.5×10 4 J / cm 2 , filament current 8.5A, accelerating high voltage 10.8kV, duty cycle 50%, vacuum degree 7.9×10 -3 Pa, target feed rate 1.5 mm / min, O2 gas flow rate 240 mL / min, Ar gas flow rate 35 mL / min, deposition time 105 min.

[0020] During implementation, during the preparation of the thermal barrier coating, the nickel-based single crystal high-temperature alloy sample was located directly above the ceramic target, and the vertical distance between the ceramic target and the nickel-based single crystal high-temperature alloy sample was 390 mm.

[0021] In practice, the preparation of the Mg2SiO4 ceramic base layer and the preparation of the Mg(Si 0.6 Ce0.4 The )2O6 ceramic top layer is carried out continuously in the same vacuum chamber.

[0022] During implementation, during the preparation of the thermal barrier coating, after the ceramic target is placed in a water-cooled copper crucible of an electron beam physical vapor deposition device, a piece of pure Nb metal material is placed on the surface of the ceramic target. The size of the pure Nb metal material is Φ56mm×30mm, and its purity is greater than 99.9%.

[0023] During implementation, a metal bonding layer is first prepared on the surface of the nickel-based single crystal high-temperature alloy. The metal bonding layer is a metal transition layer on the surface of the nickel-based single crystal high-temperature alloy, between the surface of the nickel-based single crystal high-temperature alloy and the thermal barrier coating described in the present invention.

[0024] The technical solution of the present invention adopts a single component Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target and related process gases are used as raw materials, and electron beam physical vapor deposition technology is used to control the energy density of the electron gun, filament current, acceleration high voltage, duty cycle, vacuum degree, target feed rate, O2 gas flow, Ar gas flow, deposition time and other factors to prepare Mg2SiO4 as the ceramic base on the surface of the high-temperature alloy. Mg(Si 0.6 Ce 0.4 )2O6 is a double-layer thermal barrier coating with a ceramic top layer.

[0025] At present, the process technology for magnesium silicate thermal barrier coatings at home and abroad mainly adopts atmospheric plasma spraying and supersonic flame spraying. The disadvantages of these two methods are that they are difficult to meet the requirements of thermal barrier coating interface bonding strength and columnar crystal microstructure under high temperature conditions, and the coatings prepared by these two processes have many holes, obvious defect morphology, and coexistence of inherent transverse cracks, which will cause the long-term anti-stripping life of the coating to be short. Using Mg2SiO4 as the ceramic base and Mg(Si 0.6 Ce 0.4 )2O6 as the top layer of the ceramic double-layer thermal barrier coating EB-PVD deposition process is still a blank in the world. In particular, the single component Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target is used as raw material. Based on the difference in saturated vapor pressure of three oxides, MgO, SiO2 and CeO2, the double ceramic layer structure of Mg2SiO4 / Mg(Si 0.6 Ce 0.4 )2O6 thermal barrier coatings have not been reported yet.

[0026] The characteristics and beneficial effects of the technical solution of the present invention are:

[0027] 1. Using Mg2SiO4 as the ceramic base layer can not only improve the interlayer fracture toughness mismatch of the coating, but also improve the thermal-mechanical-chemical compatibility of the coating, avoid the chemical reaction between the rare earth oxide and the thermally grown oxide layer under high temperature conditions, and effectively control the interlayer interface bonding performance of the coating. 0.6 Ce 0.4 )2O6 as the ceramic top layer can not only improve the temperature bearing capacity of the coating in a higher service environment, but also improve the sintering resistance of the coating, effectively avoiding the decline in the strain tolerance of the columnar crystal caused by the increase of the Young's modulus of the coating;

[0028] 2. With a single component Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target is the raw material, based on the difference in melting point and saturated vapor pressure of the three oxides MgO, SiO2 and CeO2. By placing a piece of pure Nb material on the surface of the ceramic target and reasonably controlling key process parameters such as the energy density of the electron gun, the filament current and the target feed rate. It can ensure that the ceramic target forms a steady-state molten pool after high-temperature melting, and can also achieve the vapor deposition of MgO and SiO2 with high saturated vapor pressure in the form of molecules to first form the Mg2SiO4 ceramic bottom layer. As the energy density and oxygen flow rate of the electron gun increase, the valence affinity of the Ce-O bond is accelerated, and the CeO2 with low saturated vapor pressure is also vaporized to form Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer;

[0029] 3. Preparation of double-layer thermal barrier coating Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, using relatively high energy density, filament current and accelerating high voltage can not only ensure that the coating obtains the designed composition that meets the stoichiometric ratio, but also ensure that the coating has a good columnar crystal micromorphology and strong strain tolerance, and improve the interface bonding strength between the coating and the metal bonding layer. At the same time, the introduction of high oxygen flow and low argon flow can also inhibit the formation of the metastable +3 valence state of the Ce element, avoiding the initiation and growth of micro cracks due to the redox reaction of the Ce element valence state change (+3 valence changes to +4 valence) under the action of high temperature of the coating. DETAILED DESCRIPTION

[0030] The technical solution of the present invention will be further described in detail below in conjunction with embodiments:

[0031] In the following embodiments, the solid raw material for preparing the metal bonding layer is PtAl metal particles with a purity greater than 98%. The process gas for preparing the metal bonding layer is: H2, Ar and HCl gas, with a purity greater than 99.999%. The equipment for preparing the metal bonding layer is chemical vapor deposition equipment.

[0032] In the following examples, the equipment for preparing the thermal barrier coating of the present invention is an electron beam physical vapor deposition equipment.

[0033] Embodiment 1:

[0034] The steps for preparing the magnesium-silicon-cerium-oxygen dual-ceramic layer structure thermal barrier coating described in the technical solution of the present invention are as follows:

[0035] Step 1: Pretreatment of nickel-based single crystal high-temperature alloy:

[0036] Use 1000-mesh sandpaper to pre-grind and remove the residue on the surface of the high-temperature alloy; use a water sandblasting machine to remove the oxide scale on the surface of the high-temperature alloy before cleaning, with sand particles below 125μm and a working pressure of 0.2MPa; after water sandblasting, rinse with tap water, soak in deionized water, dehydrate with alcohol, and blow dry;

[0037] Step 2: Prepare the metal bonding layer:

[0038] The nickel-based single crystal high-temperature alloy was loaded into the fixture, and the fixture was inserted into the gas outlet of the gas guide pipe fixture, and the vacuum was drawn and the equipment pressure test was performed. The deposition process parameters for preparing the PtAl metal bonding layer were: heating furnace temperature 1110°C, reaction chamber vacuum degree 520mbar, H2 gas flow rate 45L / min, Ar gas flow rate 28L / min, HCl gas flow rate 3.6L / min, deposition time 320min, coating thickness 50μm-70μm;

[0039] Step 3: Preparation of thermal barrier coating with double ceramic layer structure:

[0040] The sample with the prepared metal bonding layer is loaded into the fixture and the fixture is placed on the Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target, the electron gun is turned on to deposit the Mg2SiO4 ceramic bottom layer. The process parameters are: the energy density of the electron gun is 1.4×10 4 J / cm 2 , filament current 6.4A, accelerating high voltage 8.6kV, duty cycle 36%, vacuum degree 2.6×10 -3 Pa, target feed rate 0.7 mm / min, O2 gas flow 8 mL / min, Ar gas flow 320 mL / min, deposition time 180 min;

[0041] Step 4: After the Mg2SiO4 ceramic bottom layer is prepared, keep the electron gun in working state, and then 0.6 Ce 0.4 )2O6 ceramic top layer deposition, the process parameters are: the energy density of the electron gun is 4.2×10 4 J / cm 2 , filament current 8.8A, accelerating high voltage 10.4kV, duty cycle 56%, vacuum degree 8.6×10 -3 Pa, target feed rate 1.3 mm / min, O2 gas flow rate 260 mL / min, Ar gas flow rate 31 mL / min, deposition time 90 min.

[0042] Embodiment 2:

[0043] The steps for preparing the magnesium-silicon-cerium-oxygen dual-ceramic layer structure thermal barrier coating described in the technical solution of the present invention are as follows:

[0044] Step 1: Pretreatment of nickel-based single crystal high-temperature alloy:

[0045] Use 1000-mesh sandpaper to pre-grind and remove the residue on the surface of the high-temperature alloy; use a water sandblasting machine to remove the oxide scale on the surface of the high-temperature alloy before cleaning, with sand particles below 125μm and a working pressure of 0.2MPa; after water sandblasting, rinse with tap water, soak in deionized water, dehydrate with alcohol, and blow dry;

[0046] Step 2: Prepare the metal bonding layer:

[0047] The nickel-based single crystal high-temperature alloy was loaded into the fixture, and the fixture was inserted into the gas outlet of the gas guide pipe fixture, and the vacuum was drawn and the equipment pressure test was performed. The deposition process parameters for preparing the PtAl metal bonding layer were: heating furnace temperature 1110°C, reaction chamber vacuum degree 520mbar, H2 gas flow rate 45L / min, Ar gas flow rate 28L / min, HCl gas flow rate 3.6L / min, deposition time 320min, coating thickness 50μm-70μm;

[0048] Step 3: Preparation of double ceramic layer structure thermal barrier coating:

[0049] The sample with the prepared metal bonding layer is loaded into the fixture and the fixture is placed on the Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target, the electron gun is turned on to deposit the Mg2SiO4 ceramic bottom layer. The process parameters are: the energy density of the electron gun is 1.1×10 4 J / cm 2 , filament current 7.6A, accelerating high voltage 9.2kV, duty cycle 28%, vacuum degree 3.4×10 -3Pa, target feed rate 0.3 mm / min, O2 gas flow 14 mL / min, Ar gas flow 280 mL / min, deposition time 210 min;

[0050] Step 4: After the Mg2SiO4 ceramic bottom layer is prepared, keep the electron gun in working state, and then 0.6 Ce 0.4 )2O6 ceramic top layer deposition, the process parameters are: the energy density of the electron gun is 2.8×10 4 J / cm 2 , filament current 8.2A, accelerating high voltage 11.2kV, duty cycle 44%, vacuum degree 7.2×10 -3 Pa, target feed rate 1.7 mm / min, O2 gas flow rate 220 mL / min, Ar gas flow rate 39 mL / min, deposition time 120 min.

[0051] Embodiment 3:

[0052] The steps for preparing the magnesium-silicon-cerium-oxygen dual-ceramic layer structure thermal barrier coating described in the technical solution of the present invention are as follows:

[0053] Step 1: Pretreatment of nickel-based single crystal high-temperature alloy:

[0054] Use 1000-mesh sandpaper to pre-grind and remove the residue on the surface of the high-temperature alloy; use a water sandblasting machine to remove the oxide scale on the surface of the high-temperature alloy before cleaning, with sand particles below 125μm and a working pressure of 0.2MPa; after water sandblasting, rinse with tap water, soak in deionized water, dehydrate with alcohol, and blow dry;

[0055] Step 2: Prepare the metal bonding layer:

[0056] The nickel-based single crystal high-temperature alloy was loaded into the fixture, and the fixture was inserted into the gas outlet of the gas guide pipe fixture, and the vacuum was drawn and the equipment pressure test was performed. The deposition process parameters for preparing the PtAl metal bonding layer were: heating furnace temperature 1110°C, reaction chamber vacuum degree 520mbar, H2 gas flow rate 45L / min, Ar gas flow rate 28L / min, HCl gas flow rate 3.6L / min, deposition time 320min, coating thickness 50μm-70μm;

[0057] Step 3: Preparation of thermal barrier coating with double ceramic layer structure:

[0058] The sample with the prepared metal bonding layer is loaded into the fixture and the fixture is placed on the Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target, the electron gun is turned on to deposit the Mg2SiO4 ceramic bottom layer. The process parameters are: the energy density of the electron gun is 1.25×104 J / cm 2 , filament current 7.0A, accelerating high voltage 8.9kV, duty cycle 32%, vacuum degree 3.0×10 -3 Pa, target feed rate 0.5 mm / min, O2 gas flow 11 mL / min, Ar gas flow 300 mL / min, deposition time 195 min;

[0059] Step 4: After the Mg2SiO4 ceramic bottom layer is prepared, keep the electron gun in working state, and then 0.6 Ce 0.4 )2O6 ceramic top layer deposition, the process parameters are: the energy density of the electron gun is 3.5×10 4 J / cm 2 , filament current 8.5A, accelerating high voltage 10.8kV, duty cycle 50%, vacuum degree 7.9×10 -3 Pa, target feed rate 1.5 mm / min, O2 gas flow rate 240 mL / min, Ar gas flow rate 35 mL / min, deposition time 105 min.

[0060] The technical solution of the present invention has the advantages over the prior art in that it uses the same component of ceramic target and can realize a double ceramic layer structure Mg2SiO4 / Mg(Si 0.6 Ce 0.4 )2O6 thermal barrier coating, and the coating composition meets the stoichiometric design value and has an excellent columnar crystal microstructure, which can increase the working load temperature of the turbine blade material under higher service environment and improve the high temperature oxidation corrosion resistance of the blade material.

Claims

1. A method for preparing a thermal barrier coating having a magnesium-silicon-cerium-oxygen double ceramic layer structure, characterized in that: The thermal barrier coating is suitable for nickel-based single crystal high-temperature alloys. The double ceramic layer structure of the thermal barrier coating is Mg2SiO4 / Mg(Si 0.6 Ce 0.4 )2O6, the preparation method of the thermal barrier coating is an electron beam physical vapor deposition process, and the raw material for preparing the thermal barrier coating is a single component of Mg3(Si 0.8 Ce 0.2 )2O7 ceramic target, the composition and weight percentage of the ceramic target are: MgO 42.29%, SiO2 33.63%, CeO2 24.08%, the purity of the ceramic target is greater than 99%, and the process gas used for preparing the thermal barrier coating is: O2 gas and Ar gas, the purity of which is greater than 99.999%; The steps of the preparation method of the thermal barrier coating include: Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.1×10 4 J / cm 2 ~1.4×10 4 J / cm 2 , filament current 6.4A~7.6A, accelerating high voltage 8.6kV~9.2kV, duty cycle 28%~36%, vacuum degree 2.6×10 -3 Pa~3.4×10 -3 Pa, target feed rate 0.3mm / min~0.7mm / min, O2 gas flow 8mL / min~14mL / min, Ar gas flow 280mL / min~320mL / min, deposition time 180min~210min; Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 2.8×10 4 J / cm 2 ~4.2×10 4 J / cm 2 , filament current 8.2A~8.8A, accelerating high voltage 10.4kV~11.2kV, duty cycle 44%~56%, vacuum degree 7.2×10 -3 Pa~8.6×10 -3 Pa, target feed rate 1.3mm / min~1.7mm / min, O2 gas flow rate 220mL / min~260mL / min, Ar gas flow rate 31mL / min~39mL / min, deposition time 90min~120min.

2. The method for preparing the thermal barrier coating of magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1, characterized in that: The size of the ceramic target is Φ62mm×200mm.

3. The method for preparing the thermal barrier coating of magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1, characterized in that: The steps of the preparation method of the thermal barrier coating are: Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.4×10 4 J / cm 2 , filament current 6.4A, accelerating high voltage 8.6kV, duty cycle 36%, vacuum degree 2.6×10 -3 Pa, target feed rate 0.7 mm / min, O2 gas flow 8 mL / min, Ar gas flow 320 mL / min, deposition time 180 min; Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 4.2×10 4 J / cm 2 , filament current 8.8A, accelerating high voltage 10.4kV, duty cycle 56%, vacuum degree 8.6×10 - 3 Pa, target feed rate 1.3 mm / min, O2 gas flow rate 260 mL / min, Ar gas flow rate 31 mL / min, deposition time 90 min.

4. The method for preparing the thermal barrier coating of magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1, characterized in that: The steps of the preparation method of the thermal barrier coating are: Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.1×10 4 J / cm 2 , filament current 7.6A, accelerating high voltage 9.2kV, duty cycle 28%, vacuum degree 3.4×10 -3 Pa, target feed rate 0.3 mm / min, O2 gas flow 14 mL / min, Ar gas flow 280 mL / min, deposition time 210 min; Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 2.8×10 4 J / cm 2 , filament current 8.2A, accelerating high voltage 11.2kV, duty cycle 44%, vacuum degree 7.2×10 - 3 Pa, target feed rate 1.7 mm / min, O2 gas flow rate 220 mL / min, Ar gas flow rate 39 mL / min, deposition time 120 min.

5. The method for preparing the thermal barrier coating of magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1, characterized in that: The steps of the preparation method of the thermal barrier coating are: Step 1: Prepare Mg2SiO4 ceramic bottom layer on the surface of nickel-based single crystal high-temperature alloy. The process parameters are: the energy density of the electron gun is 1.25×10 4 J / cm 2 , filament current 7.0A, accelerating high voltage 8.9kV, duty cycle 32%, vacuum degree 3.0×10 -3 Pa, target feed rate 0.5 mm / min, O2 gas flow 11 mL / min, Ar gas flow 300 mL / min, deposition time 195 min; Step 2: Preparation of Mg(Si 0.6 Ce 0.4 )2O6 ceramic top layer, the process parameters are: the energy density of the electron gun is 3.5×10 4 J / cm 2 , filament current 8.5A, accelerating high voltage 10.8kV, duty cycle 50%, vacuum degree 7.9×10 - 3 Pa, target feed rate 1.5 mm / min, O2 gas flow rate 240 mL / min, Ar gas flow rate 35 mL / min, deposition time 105 min.

6. The method for preparing the thermal barrier coating of magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1, characterized in that: During the preparation process of the thermal barrier coating, the nickel-based single crystal high-temperature alloy sample is located directly above the ceramic target, and the vertical distance between the ceramic target and the nickel-based single crystal high-temperature alloy sample is 390 mm.

7. The method for preparing the thermal barrier coating of magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1, characterized in that: Preparation of Mg2SiO4 ceramic base and preparation of Mg(Si 0.6 Ce 0.4 The )2O6 ceramic top layer is carried out continuously in the same vacuum chamber.

8. The method for preparing a thermal barrier coating having a magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1 or 2, characterized in that: During the preparation of the thermal barrier coating, after the ceramic target is placed in a water-cooled copper crucible of an electron beam physical vapor deposition device, a piece of pure Nb metal material is placed on the surface of the ceramic target. The size of the pure Nb metal material is Φ56mm×30mm, and its purity is greater than 99.9%.

9. The method for preparing the thermal barrier coating with a magnesium-silicon-cerium-oxygen double ceramic layer structure according to claim 1, characterized in that: A metal bonding layer is first prepared on the surface of the nickel-based single crystal high-temperature alloy. The metal bonding layer is a metal transition layer on the surface of the nickel-based single crystal high-temperature alloy and is between the surface of the nickel-based single crystal high-temperature alloy and the thermal barrier coating.