A thermoelectric device connected with L-shaped metal conductive sheets and a parameter determination method thereof

Abstract

A thermoelectric device connected by L-shaped metal conductive sheets and a parameter determination method thereof, the thermoelectric device comprising P-type semiconductors with different heights, N-type semiconductors, a spacing between the P-type semiconductors and the N-type semiconductors, upper and lower ceramic plates with the same size, a first L-shaped metal conductive sheet on the upper layer, a second L-shaped metal conductive sheet and a third metal conductive sheet on the lower layer. The relative heights of the P-type semiconductors and the N-type semiconductors are changed by introducing the L-shaped metal conductive sheets, so that the current flowing through the two is kept consistent, overcoming the problem of power limitation caused by the non-equivalence of semiconductor parameters in traditional thermoelectric devices, and finally improving the overall thermoelectric conversion rate of the device.

Description

Technical Field

[0001] This invention relates to the field of thermoelectric device technology, and specifically to a thermoelectric device using L-shaped metal conductive sheets for connection and a method for determining its parameters. Background Technology

[0002] Because the electrical and thermal parameters of the P-type and N-type semiconductors in traditional thermoelectric devices differ, the currents flowing through the two semiconductors are not equal under the same operating conditions. This results in the larger current being limited by the smaller current, thus degrading the overall output performance of the device. For example:

[0003] Thanks to advancements in modern thermoelectric material preparation technology, breakthroughs have been achieved in the thermoelectric figure of merit of corresponding materials. Thermoelectric technology is now widely applied in heat recovery, such as in automotive exhaust heat recovery and industrial waste heat recovery. Since the output power of a single thermocouple is far from the actual required output, multiple PN thermoelectric devices are typically integrated into a thermoelectric power generation module, thereby achieving an output power level suitable for recycling. Because a thermoelectric power generation module is formed by connecting many PN thermoelectric devices in an orderly arrangement, the evaluation of overall output performance often focuses on optimizing the structure of individual PN thermoelectric devices to improve overall performance. In optimizing traditional thermoelectric structures, researchers have proposed many novel structures, such as Y-type thermoelectric structures, multi-material segmented thermoelectric structures, and ring-shaped thermoelectric structures. Although these structures exhibit good performance in different working fluids, these structural optimization methods are all improvements based on traditional symmetrical thermoelectric structures. They ignore the essential connection between P-type and N-type semiconductors in series, and therefore use P-type and N-type semiconductors of the same size and number. In reality, the thermoelectric material parameters corresponding to the P-pole and N-pole are not the same. Therefore, when they work at the same temperature difference, the current densities generated by the P-pole and N-pole are not equal, which limits the overall output current to the smaller of the two. Summary of the Invention

[0004] The purpose of this invention is to provide a thermoelectric device using an L-shaped metal conductive sheet and a method for determining its parameters. By introducing an L-shaped metal conductive sheet, the relative heights of the P-type and N-type semiconductors are changed, so that the current flowing through them is kept consistent. This overcomes the problem of power limitation caused by unequal semiconductor parameters in traditional thermoelectric devices, and ultimately improves the overall thermoelectric conversion efficiency of the device.

[0005] The technical solution adopted in this invention is as follows:

[0006] A thermoelectric device using L-shaped metal conductive sheets for connection, comprising:

[0007] P-type and N-type semiconductors of different heights; spacing between P-type and N-type semiconductors; upper and lower ceramic plates of the same size;

[0008] The upper layer has a first L-shaped metal conductive sheet, and the lower layer has a second L-shaped metal conductive sheet and a third metal conductive sheet; the bottom surface of the upper ceramic plate is connected to the top surface of the longer portion of the first L-shaped metal conductive sheet.

[0009] The bottom surface of the shorter portion of the first L-shaped metal conductive sheet is connected to and overlaps with the top surface of the P-type semiconductor. The bottom surface of the P-type semiconductor is connected to and overlaps with the top surface of the shorter portion of the second L-shaped metal conductive sheet. The bottom surface of the longer portion of the first L-shaped metal conductive sheet is connected to the top surface of the N-type semiconductor. The bottom surface of the N-type semiconductor is connected to the top surface of the third metal conductive sheet. The bottom surface of the longer portion of the second L-shaped metal conductive sheet located on the left side of the lower layer and the bottom surface of the third metal conductive sheet located on the right side of the lower layer are both connected to the top surface of the lower ceramic plate.

[0010] The left side of the longer portion of the first L-shaped metal conductive sheet, the left side of the shorter portion of the first L-shaped metal conductive sheet, the left side of the P-type semiconductor, and the left side of the shorter portion of the second L-shaped metal conductive sheet overlap.

[0011] The right side of the shorter portion of the first L-shaped metal conductive sheet, the right side of the P-type semiconductor, the right side of the shorter portion of the second L-shaped metal conductive sheet, and the right side of the longer portion of the second L-shaped metal conductive sheet overlap.

[0012] The left side of the N-type semiconductor and the left side of the third metal conductive sheet overlap;

[0013] The right side of the longer portion of the first L-shaped metal conductive sheet overlaps with the right side of the N-shaped semiconductor;

[0014] The left side of the longer part of the second L-shaped metal conductive sheet coincides with the left side of the lower ceramic plate, and is on the same horizontal plane as the left side of the upper ceramic plate.

[0015] The right side of the third metal conductive sheet coincides with the right side of the lower ceramic plate, and is on the same horizontal plane as the right side of the upper ceramic plate.

[0016] The spacing between the P-type semiconductor and the N-type semiconductor is L0.

[0017] Both the P-type and N-type semiconductors have a length of L1, and their heights differ by 2H0. The height of the lower semiconductor is H1, and the height of the higher semiconductor is H1+2H0.

[0018] The height of the longer portion of the first L-shaped metal conductive sheet is H2, and the length of the longer portion of the first L-shaped metal conductive sheet is equal to the sum of the lengths of the P-type semiconductor and the N-type semiconductor plus the distance between them, i.e., 2L1+L0.

[0019] The shorter portion of the second L-shaped metal conductive sheet has a height of H0ΔH and a length of L1; the longer portion of the second L-shaped metal conductive sheet and the third metal conductive sheet both have a height of H2 and a length of L1.

[0020] The upper and lower ceramic plates have a length of 3L0 + 2L1 and a height of H3.

[0021] The width of the upper and lower ceramic plates, metal conductive sheets, and semiconductors is L0.

[0022] The sum of the height of the shorter portion of the first L-shaped metal conductive sheet and the height of the shorter portion of the second L-shaped metal conductive sheet is 2H0; the height difference between the P-type semiconductor and the N-type semiconductor is 2H0.

[0023] The height of the shorter portion of the first L-shaped metal conductive sheet is H0±iΔH, and the length is L1; where i represents the multiple by which the heights of the upper and lower metal conductive sheets change relative to ΔH, and the parameter... like At this point, in the upper and lower metal conductive sheets, the left and right ends of one electrode are at the same height, while the left and right ends of the other electrode differ in height by 2H0.

[0024] The first, second, and third L-shaped metal conductive sheets all use L-shaped copper electrodes. The method for determining the parameters of the thermoelectric device is as follows: the current flowing through the P-type semiconductor and the N-type semiconductor are respectively I... P I N Calculate the median resistivity integral for P-type and N-type semiconductors. and The value establishes the operating conditions of the ceramic plate, P-type semiconductor, N-type semiconductor, metal conductive sheet, and load resistor, determined by I. P =I N The heights of P-type and N-type semiconductors are compared; the details are as follows:

[0025] like The height of the P-type semiconductor is H1, and the height of the N-type semiconductor is H1+2H0;

[0026] like The height of the P-type semiconductor is H1 + 2H0, and the height of the N-type semiconductor is H1.

[0027] Then the P-type semiconductor and the N-type semiconductor have the same height, both of which are H1. At this time, i = 0 and H0 = 0.

[0028] According to I P =I N The principle is to calculate the relationship between H1 and H0, and finally obtain the optimal ratio of the heights of the P-type semiconductor and the N-type semiconductor. The specific steps are as follows:

[0029] (i) The temperature T of the hot-end leg of the semiconductor on the higher side is obtained based on the thermal resistance network. h-M Temperature T of the cold end support leg c-M Among them, since the longer portion of the first L-shaped metal conductive sheet, the longer portion of the second L-shaped metal conductive sheet, and the third metal conductive sheet have high thermal conductivity, the temperature change of these two parts of the electrode during the heat conduction process can be ignored.

[0030] According to the thermoelectric material parameters given by the present invention, the following can be calculated: Therefore, the semiconductor on the higher side is an N-type semiconductor;

[0031] (ii) Calculate the temperature T of the hot-end leg of the lower semiconductor according to the heat conduction formula. h-m Temperature T of the cold end support leg c-m According to the thermoelectric material parameters given by the present invention, the following can be calculated: Therefore, the semiconductor on the lower side is a P-type semiconductor.

[0032] (iii) Based on the obtained temperature difference between the two semiconductors, calculate their respective voltages and derive H1, H0, and I. P I N The relational expression is used to ultimately obtain I. P =I N The ratio of H1 to H0 is used to determine the optimal ratio of the heights of the semiconductors on both sides.

[0033] The temperature operating conditions are set as follows: the bottom surface of the lower ceramic plate is set as the high temperature boundary, and the top surface of the upper ceramic plate is set as the low temperature boundary.

[0034] The current operating conditions are set as follows: the left end face of the lower part of the second L-shaped metal conductive sheet connected to the lower semiconductor is set as an electrical contact, and the right end face of the lower part of the third L-shaped metal conductive sheet connected to the higher semiconductor is set as ground.

[0035] This invention discloses a thermoelectric device using L-shaped metal conductive sheets for connection and a method for determining its parameters. The technical advantages are as follows:

[0036] 1) The thermoelectric device of the present invention consists of P-type semiconductors and N-type semiconductors connected in series through an L-type metal conductive sheet, and the whole assembly is sandwiched between two ceramic plates; wherein, the heights of the P-type semiconductors and N-type semiconductors are different, and their specific sizes are determined by the current flowing through them.

[0037] 2) This invention introduces an L-shaped metal conductive sheet to keep the current flowing through the P-type semiconductor and the N-type semiconductor consistent, which can improve the overall output of the thermoelectric device and guide the optimization of traditional thermoelectric devices to reduce energy consumption.

[0038] 3) The present invention uses a thermoelectric device connected by an L-shaped metal conductive sheet. It overcomes this disadvantage by changing the relative height of the two semiconductors. The non-equal height P-type semiconductors and N-type semiconductors inside are connected in series through the L-shaped metal conductive sheet, and the whole is covered with a ceramic plate. When the height ratio of the P-type semiconductor to the N-type semiconductor reaches a certain value, the current flowing through the two semiconductors is the same, and the thermoelectric device has the best output performance.

[0039] 4) This invention will provide a method for determining the parameters of a thermoelectric device connected by an L-shaped metal conductive sheet through numerical solution, and determine the optimal height ratio between the P-type semiconductor and the N-type semiconductor. Attached Figure Description

[0040] The present invention will be further described below with reference to the accompanying drawings and embodiments:

[0041] Figure 1 This is a schematic diagram of a planar structure of a thermoelectric device connected by L-shaped metal conductive sheets;

[0042] Figure 2 This is a schematic diagram of the internal temperature distribution of a thermoelectric device.

[0043] Figure 3 A flowchart for calculating the height of P-type and N-type semiconductors in thermoelectric devices;

[0044] Figure 4 This is a three-dimensional geometric diagram of a thermoelectric device connected by L-shaped metal conductive sheets. Detailed Implementation

[0045] The technical solution of the present invention will be described below with reference to the accompanying drawings, specific thermoelectric devices, and their material parameters:

[0046] like Figure 1As shown, a thermoelectric device using L-shaped metal conductive sheets for connection includes: P-type semiconductor 2 and N-type semiconductor 4 of different heights; a gap exists between the P-type semiconductor 2 and the N-type semiconductor 4; an upper ceramic plate 1 and a lower ceramic plate 1' of the same size; a first L-shaped metal conductive sheet 3.1 located on the upper layer, and a second L-shaped metal conductive sheet 3.2 and a third metal conductive sheet 3.3 located on the lower layer; the bottom surface of the upper ceramic plate 1 is connected to the top surface of the longer portion of the first L-shaped metal conductive sheet 3.1.

[0047] The bottom surface of the shorter portion of the first L-shaped metal conductive sheet 3.1 is connected to and overlaps with the top surface of the P-type semiconductor 2. The bottom surface of the P-type semiconductor 2 is connected to and overlaps with the top surface of the shorter portion of the second L-shaped metal conductive sheet 3.2. The bottom surface of the longer portion of the first L-shaped metal conductive sheet 3.1 is connected to the top surface of the N-type semiconductor 4. The bottom surface of the N-type semiconductor 4 is connected to the top surface of the third metal conductive sheet 3.3.

[0048] The bottom surface of the longer portion of the second L-shaped metal conductive sheet 3.2 located on the left side of the lower layer and the bottom surface of the third metal conductive sheet 3.3 located on the right side of the lower layer are both connected to the top surface of the lower ceramic plate 1'.

[0049] The left side of the longer portion of the first L-shaped metal conductive sheet 3.1, the left side of the shorter portion of the first L-shaped metal conductive sheet 3.1, the left side of the P-type semiconductor 2, and the left side of the shorter portion of the second L-shaped metal conductive sheet 3.2 overlap;

[0050] The right side of the shorter portion of the first L-shaped metal conductive sheet 3.1, the right side of the P-type semiconductor 2, the right side of the shorter portion of the second L-shaped metal conductive sheet 3.2, and the right side of the longer portion of the second L-shaped metal conductive sheet 3.2 overlap.

[0051] The left side of the N-type semiconductor 4 and the left side of the third metal conductive sheet 3.3 overlap;

[0052] The right side of the longer portion of the first L-shaped metal conductive sheet 3.1 overlaps with the right side of the N-type semiconductor 4;

[0053] The left side of the longer portion of the second L-shaped metal conductive sheet 3.2 coincides with the left side of the lower ceramic plate 1', and is on the same horizontal plane as the left side of the upper ceramic plate 1.

[0054] The right side of the third metal conductive sheet 3.3 coincides with the right side of the lower ceramic plate 1', and is on the same horizontal plane as the right side of the upper ceramic plate 1.

[0055] The spacing between the P-type semiconductor 2 and the N-type semiconductor 4 is L0.

[0056] The lengths of the P-type semiconductor 2 and the N-type semiconductor 4 are both L1, and their heights differ by 2H0. The height of the lower semiconductor is H1, and the height of the higher semiconductor is H1+2H0.

[0057] The height of the longer portion of the first L-shaped metal conductive sheet 3.1 is H2, and the length of the longer portion of the first L-shaped metal conductive sheet 3.1 is equal to the sum of the lengths of the P-type semiconductor 2 and the N-type semiconductor 4 plus the distance between them, i.e., 2L1+L0;

[0058] The shorter portion of the second L-shaped metal conductive sheet 3.2 has a height of The length is L1; the height of the longer part of the second L-shaped metal conductive sheet 3.2 and the height of the third metal conductive sheet 3.3 are both H2, and the length of the longer part of the second L-shaped metal conductive sheet 3.2 and the length of the third metal conductive sheet 3.3 are both L1.

[0059] The upper ceramic plate 1 and the lower ceramic plate 1' have a length of 3L0+2L1 and a height of H3.

[0060] The width of the upper and lower ceramic plates, metal conductive sheets, and semiconductors is L0.

[0061] The sum of the height of the shorter portion of the first L-shaped metal conductive sheet 3.1 and the shorter portion of the second L-shaped metal conductive sheet 3.2 is 2H0; the height difference between the P-type semiconductor 2 and the N-type semiconductor 4 is 2H0.

[0062] The first L-shaped metal conductive sheet 3.1, the second L-shaped metal conductive sheet 3.2, and the third metal conductive sheet 3.3 all use L-shaped copper electrodes.

[0063] like Figure 2 As shown, P-type semiconductor 2 and N-type semiconductor 4 are connected by L-type copper electrodes. The top surface temperature of the upper ceramic plate 1 is the cold junction temperature T. c The bottom surface temperature of the lower ceramic plate 1' is the hot end temperature T. h In the lower copper electrode, the contact temperature with the P-type semiconductor 2 is T. h-m The contact temperature with the N-type semiconductor 4 on the connection side is T. h-M In the upper first L-shaped metal conductive sheet 3.1, the contact temperature with the P-type semiconductor 2 is T. c-m The contact temperature with the N-type semiconductor 4 on the connection side is T. c-M .

[0064] A method for determining the parameters of a thermoelectric device using L-shaped metal conductive sheets is described below:

[0065] Step 1: Calculate the median integral resistivity of P-type semiconductor 2 and N-type semiconductor 4 using the temperature difference. and The value is used to determine the relationship between the heights of P-type semiconductor 2 and N-type semiconductor 4.

[0066] (1) Calculate the median resistivity integral of P-type semiconductor 2.

[0067]

[0068] In the formula, ρ P (T) represents the resistivity of each P-type semiconductor;

[0069] (2) Calculate the median resistivity integral of N-type semiconductor 4.

[0070]

[0071] In the formula, ρ N (T) represents the resistivity of each N-type semiconductor;

[0072] (3) According to I P =I N In principle, compare the heights of P-type semiconductor 2 and N-type semiconductor 4. If Then the height of P-type semiconductor 2 is H1, and the height of N-type semiconductor 4 is H1 + 2H0; if Then the height of P-type semiconductor 2 is H1 + 2H0, and the height of N-type semiconductor 4 is H1; if Then P-type semiconductor 2 and N-type semiconductor 4 have the same height, both being H1, that is... Calculations show that Therefore, the shorter semiconductor on the left is a P-type semiconductor 2, and the longer semiconductor on the right is an N-type semiconductor 4.

[0073] Step 2, set the temperature boundary conditions as follows:

[0074] The bottom surface of the lower ceramic plate 1' is set as a high-temperature boundary, and the top surface of the upper ceramic plate 1 is set as a low-temperature boundary.

[0075] Set the current boundary conditions as follows:

[0076] The second L-type metal conductive sheet 3.2, connected to the P-type semiconductor 2, has its left end face set as an electrical contact; the third metal conductive sheet 3.3, connected to the N-type semiconductor 4, has its right end face set as ground.

[0077] Step 3, as Figure 3 As shown, calculate The hot and cold junction temperatures of the P-type semiconductor 2 and the N-type semiconductor 4 were calculated based on a thermal resistance network. The third metal conductive sheet 3.3 connected to the N-type semiconductor 4 has a planar structure, and its temperature change during conduction can be neglected.

[0078] T h-M =T h (1)

[0079] T c-M =T c (2)

[0080] In the formula, T h-M T represents the hot junction temperature of an N-type semiconductor. c-M This indicates the cold junction temperature of an N-type semiconductor.

[0081] The upper and lower copper electrodes connected to the P-type semiconductor 2 have an L-shaped structure. The hot-end temperature and cold-end temperature of the P-type semiconductor are calculated using the heat flow formula, i.e.:

[0082]

[0083]

[0084] In the formula, Q h Q represents the heat flow at the hot end of a P-type semiconductor. c R represents the cold junction heat flow of a P-type semiconductor. tc-h R represents the thermal resistance of the upper part of the lower L-shaped metal conductive sheet at the hot end. tc-c T represents the cold-end thermal resistance of the lower part of the upper L-shaped metal conductive sheet. h-m T represents the hot junction temperature of a P-type semiconductor. c-m This indicates the cold junction temperature of a P-type semiconductor.

[0085] Then, the Seebeck voltage of each semiconductor is calculated based on the internal temperature difference between P-type semiconductor 2 and N-type semiconductor 4, thus obtaining I. P I N The current relationship formula, and the specific steps are as follows:

[0086] (1) Calculate Q based on the heat conduction equation h With Q c ,Right now:

[0087]

[0088]

[0089] In the formula, λ P(T) λ represents the thermal conductivity of a P-type semiconductor. N(T) S represents the thermal conductivity of an N-type semiconductor. P(r) S represents the Seebeck constant of a P-type semiconductor.N(T) R represents the Seebeck constant of an N-type semiconductor, I represents the circuit current, and R represents the current in the circuit. P R represents a P-type semiconductor resistor. N This represents an N-type semiconductor resistor, where the cross-sectional area of ​​both the top and bottom faces of the P-type and N-type semiconductors is L1. 2 .

[0090] (2) Calculate the resistance of each of the P-type semiconductor 2 and the N-type semiconductor 4, i.e.:

[0091]

[0092]

[0093] In the formula, R P R represents a P-type semiconductor resistor. N This represents an N-type semiconductor resistor.

[0094] (3) Calculate the Seebeck voltage in P-type semiconductor 2 and N-type semiconductor 4, and determine I. P with I N ,Right now:

[0095]

[0096]

[0097] I P =I N (11)

[0098] In the formula, I P I N All are I in size.

[0099] (4) External load R L Calculate the overall output power P. out , where P out =Q h -Q c ,Right now:

[0100] P out =I 2 R L (12)

[0101] P out =S P(T) I(T h-m -T c-m )-S N(r) I(T h-M -T c-M )-I 2 (R P +R N (13)

[0102] Based on the temperature boundary conditions, and by solving the above equations simultaneously, we can derive I. P I N The relationship between H0 and H1, let I P =I N ,calculate

[0103] The thermoelectric materials used in the P-type semiconductor 2 and N-type semiconductor 4 in this example are BiSbTeSe-based materials. The thermoelectric material parameters of the BiSbTeSe-based P-type and N-type semiconductors are listed in Table 1.

[0104] Table 1 Thermoelectric material parameters of BiSbTeSe-based P-type and N-type semiconductors

[0105]

[0106] In addition, the relevant dimensional parameters and other parameters of each component are listed in Table 2.

[0107] Table 2 Semiconductor parameters and other parameters

[0108]

Claims

1. A thermoelectric device using L-shaped metal conductive sheets for connection, characterized in that... include: P-type semiconductors (2) and N-type semiconductors (4) of varying heights; There is a gap between the P-type semiconductor (2) and the N-type semiconductor (4); Upper ceramic plate (1) and lower ceramic plate (1') of the same size; The first L-shaped metal conductive sheet (3.1) is located on the upper layer, and the second L-shaped metal conductive sheet (3.2) and the third metal conductive sheet (3.3) are located on the lower layer. The bottom surface of the upper ceramic plate (1) is connected to the top surface of the longer portion of the first L-shaped metal conductive sheet (3.1); The bottom surface of the shorter portion of the first L-shaped metal conductive sheet (3.1) is connected to and overlaps with the top surface of the P-type semiconductor (2). The bottom surface of the P-type semiconductor (2) is connected to and overlaps with the top surface of the shorter portion of the second L-shaped metal conductive sheet (3.2). The bottom surface of the longer portion of the first L-shaped metal conductive sheet (3.1) is connected to the top surface of the N-type semiconductor (4). The bottom surface of the N-type semiconductor (4) is connected to the top surface of the third metal conductive sheet (3.3). The bottom surface of the longer portion of the second L-shaped metal conductive sheet (3.2) on the left side of the lower layer and the bottom surface of the third metal conductive sheet (3.3) on the right side of the lower layer are both connected to the top surface of the lower ceramic plate (1'). The sum of the height of the shorter portion of the first L-shaped metal conductive sheet (3.1) and the height of the shorter portion of the second L-shaped metal conductive sheet (3.2) is: The height difference between the P-type semiconductor (2) and the N-type semiconductor (4) ; The currents flowing through the P-type semiconductor (2) and the N-type semiconductor (4) are respectively , Calculate the median resistivity integral of P-type semiconductor (2) and N-type semiconductor (4). and The values ​​establish the operating conditions of the ceramic plate, P-type semiconductor (2), N-type semiconductor (4), metal conductive sheet, and load resistor, based on... Compare the heights of P-type semiconductor (2) and N-type semiconductor (4); the details are as follows: like Then the height of the P-type semiconductor (2) is The height of the N-type semiconductor (4) is ; like Then the height of the P-type semiconductor (2) is The height of the N-type semiconductor (4) is ; Then the P-type semiconductor (2) and the N-type semiconductor (4) have the same height, both being... ,at this time , ; according to Principles, calculations , The optimal ratio of the heights of the P-type semiconductor (2) and the N-type semiconductor (4) is obtained by determining the relative sizes of the two components. The specific steps are as follows: (i) The temperature of the hot end leg of the semiconductor on the higher side is obtained based on the thermal resistance network. Temperature of cold end support legs Among them, since the longer part of the first L-shaped metal conductive sheet (3.1), the longer part of the second L-shaped metal conductive sheet (3.2), and the third metal conductive sheet (3.3) have high thermal conductivity, the temperature change of these two parts of the electrode during the heat conduction process can be ignored; (ii) Calculate the temperature of the hot-end leg of the lower semiconductor according to the heat conduction formula. Temperature of cold end support legs ; (iii) Calculate the voltage of each semiconductor based on the obtained temperature difference between the two sides, and derive the voltage of each semiconductor. , and , The relational expression is ultimately obtained. hour, , The ratio of the two is used to determine the optimal ratio of the heights of the semiconductors on both sides.

2. The thermoelectric device using L-shaped metal conductive sheets for connection according to claim 1, characterized in that: The left side of the longer portion of the first L-shaped metal conductive sheet (3.1), the left side of the shorter portion of the first L-shaped metal conductive sheet (3.1), the left side of the P-type semiconductor (2), and the left side of the shorter portion of the second L-shaped metal conductive sheet (3.2) overlap; The right side of the shorter portion of the first L-shaped metal conductive sheet (3.1), the right side of the P-type semiconductor (2), the right side of the shorter portion of the second L-shaped metal conductive sheet (3.2), and the right side of the longer portion of the second L-shaped metal conductive sheet (3.2) overlap; The left side of the N-type semiconductor (4) and the left side of the third metal conductive sheet (3.3) overlap; The right side of the longer portion of the first L-type metal conductive sheet (3.1) overlaps with the right side of the N-type semiconductor (4); The left side of the longer portion of the second L-shaped metal conductive sheet (3.2) coincides with the left side of the lower ceramic plate (1') and is on the same horizontal plane as the left side of the upper ceramic plate (1). The right side of the third metal conductive sheet (3.3) coincides with the right side of the lower ceramic plate (1') and is on the same horizontal plane as the right side of the upper ceramic plate (1).

3. The thermoelectric device using L-shaped metal conductive sheets for connection according to claim 1, characterized in that: The height of the shorter portion of the first L-shaped metal conductive sheet (3.1) is , length is ;in, Indicates the height of the upper and lower metal conductive sheets as... The parameter is the multiple of the base change. ,like At this point, in the upper and lower layers of conductive metal sheets, the left and right ends of one electrode are at the same height, while the left and right ends of the other electrode differ in height. .

4. The thermoelectric device using L-shaped metal conductive sheets for connection according to claim 1, characterized in that: The first L-shaped metal conductive sheet (3.1), the second L-shaped metal conductive sheet (3.2), and the third metal conductive sheet (3.3) all use L-shaped copper electrodes.

5. A thermoelectric device using L-shaped metal conductive sheets for connection according to claim 1, characterized in that: The temperature operating conditions are set as follows: the bottom surface of the lower ceramic plate (1') is set as the high temperature boundary, and the top surface of the upper ceramic plate (1) is set as the low temperature boundary; The current operating conditions are set as follows: the left end face of the lower part of the second L-shaped metal conductive sheet (3.2) connected to the semiconductor on the lower side is set as an electrical contact, and the right end face of the lower part of the third metal conductive sheet (3.3) connected to the semiconductor on the higher side is set as ground.

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