Quantum Well Structure, Its Preparation Method, and Light-Emitting Diode

Abstract

A quantum well structure, a preparation method thereof, and a light-emitting diode. The quantum well structure includes at least one quantum well and at least one first film layer. Each quantum well in the at least one quantum well includes a well layer and a barrier layer stacked on each other, and the well layer includes a first doping element. Each first film layer in the at least one first film layer includes a second doping element. The second doping element is used to adjust the doping amount of the first doping element in the well layer adjacent to the first film layer. The first doping element includes at least one of In and Al, and the second doping element includes at least one of Al, Mg, and Si. The first film layer can adjust (such as increase or inhibit) the content of the first doping element doped into the well layer when the well layer is formed through the catalytic action of the second doping element, so as to adjust the light-emitting efficiency of the quantum well and the wavelength of the emitted light as needed.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to the technical field of light-emitting diodes, and more particularly to a quantum well structure, a preparation method thereof, and a light-emitting diode. Background Art

[0002] Semiconductor light emitting diodes (LEDs for short) utilize the recombination radiation of injected electrons and holes in quantum wells. Specific elements need to be doped in specific film layers of the quantum wells, and the doping content of the specific elements directly affects the wavelength range of the emitted light.

[0003] However, limited by the current quantum well structure design, the doping content of the above specific elements is limited, resulting in difficulty for LEDs to achieve long-wavelength emission. Summary of the Invention

[0004] In view of this, embodiments of the present disclosure provide a quantum well structure, a preparation method thereof, and a light-emitting diode based on the quantum well structure, which can solve the above technical problems.

[0005] In a first aspect of the present disclosure, a quantum well structure is provided. The quantum well structure includes at least one quantum well and at least one first film layer. Each quantum well in the at least one quantum well includes a well layer and a barrier layer stacked on top of each other, and the well layer includes a first doping element. Each first film layer in the at least one first film layer includes a second doping element. The second doping element is used to adjust the doping amount of the first doping element in the well layer adjacent to the first film layer. The first doping element includes at least one of In and Al, and the second doping element includes at least one of Al, Mg, and Si.

[0006] The luminous efficiency and luminous wavelength of the quantum well structure are related to the doping content of the first doping element in the well layer. By providing a first film layer including the above-mentioned second doping element, through the catalytic action of the second doping element, the content of the first doping element doped into the well layer during its formation can be adjusted (for example, increased or inhibited), so as to adjust the luminous efficiency of the quantum well and the wavelength of the emitted light as needed.

[0007] For example, in an embodiment of the first aspect of the present disclosure, the thickness of the first film layer is less than the thickness of one atomic layer, and it is in a discontinuous island-like or thin-film porous state, so as to form a quantum dot structure with different first doping element contents in the island-like or thin-film porous region of the first film layer. Thus, through the catalytic action of the second doping element in the first film layer, the growth mode of the well layer is changed, thereby adjusting the content of the first doping element.

[0008] For example, in the quantum well structure provided by the embodiment of the first aspect of the present disclosure, a first film layer is provided on one side of at least one potential well layer, and at least one potential well layer is grown on the first film layer.

[0009] In this way, the potential well layer and the first film layer are in contact, that is, after the potential well layer is grown, when the first doping element is doped into the potential well layer, due to the close distance between the potential well layer and the second doping element in the first film layer, the catalytic effect of the second doping element is significant, thereby improving the effect of regulating the doping content of the first doping element (for example, increasing or suppressing the doping content).

[0010] For example, in the quantum well structure provided by the embodiment of the first aspect of the present disclosure, the first film layer is disposed adjacent to both sides of at least one potential well layer.

[0011] In this way, the first film layer doped with the second doping element is arranged on both sides of the potential well layer. When the first doping element is doped in the potential well layer, the catalytic effect of the second doping element is more significant, thereby further improving the regulating effect of the doping content of the first doping element (for example, increasing or suppressing the doping content).

[0012] For example, in the quantum well structure provided by the embodiment of the first aspect of the present disclosure, a first film layer is inserted into at least one barrier layer, and the distance between the first film layer and an adjacent potential well layer is less than or equal to 2 nm.

[0013] In this way, the incorporated content of the second doping element in the potential well layer formed on the barrier layer can be adjusted by inserting the first film layer into the barrier layer without affecting the degree of lattice difference between the potential well layer and the barrier layer.

[0014] For example, in the quantum well structure provided by the embodiment of the first aspect of the present disclosure, the content of the second doping element in the first film layer is divided into a gradual or step-type, and the content of the second doping element in the first film layer close to the adjacent potential well layer is greater than the content of the second doping element in the first film layer far away from the adjacent potential well layer.

[0015] In this way, it can be ensured that the part of the first film layer close to the potential well layer includes sufficient second doping elements to adjust the doping amount of the first doping element in the potential well layer, while at the same time, it can be avoided as much as possible that the part of the first film layer far from the potential well layer includes too much first doping element to cause adverse effects on other film layers (such as barrier layers).

[0016] For example, in the quantum well structure provided by some embodiments of the first aspect of the present disclosure, the second doping element includes at least one of Al and Mg, and the second doping element adjusts the doping amount of the first doping element in the potential well layer adjacent to the first film layer to increase.

[0017] For example, the second doping element is Al, the thickness of the first film layer is less than the thickness of one atomic layer, and it is in a discontinuously distributed island shape or a porous film state.

[0018] It should be noted that the thickness of the atomic layer is determined by the type of atoms and the lattice structure formed.

[0019] In this way, the second doping element has a positive catalytic effect, and the second doping element can promote the incorporation content of the first doping element during doping, so that the quantum well structure can achieve the function of emitting light with a longer electroluminescent wavelength.

[0020] For example, in the quantum well structure provided by some other embodiments of the first aspect of the present disclosure, the second doping element is Si, and the second doping element adjusts the doping reduction of the first doping element in the potential well layer adjacent to the first film layer.

[0021] In this way, the second doping element has a reverse catalytic effect, and the second doping element can suppress the incorporation content of the first doping element during doping, so that the quantum well structure can achieve the function of emitting light with a shorter electroluminescent wavelength.

[0022] For example, in the quantum well structure provided by some embodiments of the first aspect of the present disclosure, the potential well layer includes at least one of InGaN and AlGaN, and at least one first film layer includes at least one of AlInGaN and MgInGaN.

[0023] For example, in the quantum well structure provided by some embodiments of the first aspect of the present disclosure, in the potential well layer, the material composition ratio of the first doping element and Ga is between 0:100 and 40:60; in at least one first film layer, the material composition ratio of the sum of In and Ga to the second doping element is between 80:20 and 99:1.

[0024] For example, in the quantum well structure provided by some embodiments of the first aspect of the present disclosure, at least one first film layer includes multiple first film layers, at least one quantum well includes multiple quantum wells stacked on each other, and at least one quantum well is grown on each of the multiple first film layers.

[0025] The embodiment of the second aspect of the present disclosure provides a light-emitting diode, which includes a substrate, an N-type layer, a P-type layer and the quantum well structure in the embodiment of the first aspect. The N-type layer is located on the substrate. The P-type layer is located on the side of the N-type layer away from the substrate. The quantum well structure is located between the N-type layer and the P-type layer. From the direction of the N-type layer to the P-type layer, the potential well layer and the barrier layer in each quantum well are arranged in sequence.

[0026] An embodiment of the second aspect of the present disclosure provides a method for preparing a quantum well structure, the preparation method including: forming a barrier layer; forming a first film layer stacked with the barrier layer, the first film layer including a second doping element, the second doping element including at least one of Al, Mg, and Si; forming a quantum well layer on the first film layer, the quantum well layer including a first doping element, the second doping element being used to adjust the doping amount of the first doping element in the quantum well layer adjacent to the first film layer, the first doping element including at least one of In and Al. Description of the Drawings

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments described in the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0028] Figure 1 A cross-sectional schematic diagram of a quantum well structure provided by an embodiment of the present disclosure;

[0029] Figure 2 Another cross-sectional schematic diagram of a quantum well structure provided by an embodiment of the present disclosure;

[0030] Figure 3 Another cross-sectional schematic diagram of a quantum well structure provided by an embodiment of the present disclosure;

[0031] Figure 4 Another cross-sectional schematic diagram of a quantum well structure provided by an embodiment of the present disclosure;

[0032] Figure 5 A cross-sectional schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0033] Figure 6 A planar structure schematic diagram of a light-emitting component provided by an embodiment of the present disclosure;

[0034] Figure 7 A flowchart of a method for preparing a quantum well structure provided by an embodiment of the present disclosure. Detailed Embodiments

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0036] GaN-based LEDs can be applied to display and lighting-related applications. In the quantum wells of such LEDs, due to factors such as lattice constant differences between the well layer and the barrier layer, defects will occur in the epitaxial film layer. Moreover, in subsequent doping processes, such as the process of doping the well layer, it is difficult to effectively control the incorporation content of the doping elements in the well layer. For example, for the In component in the well layer composed of InGaN material, the incorporation content is difficult to exceed 40%. Even if the In incorporation component exceeds 40%, it will be accompanied by a significant decline in the material quality, and then lead to the problem of the decline of the internal quantum effect. In view of this, the embodiments of the present disclosure provide a quantum well structure, a preparation method thereof, and a light-emitting diode, which can solve the above technical problems.

[0037] The embodiments of the present disclosure provide a quantum well structure, which includes at least one quantum well and at least one first film layer. Each quantum well in the at least one quantum well includes a well layer and a barrier layer stacked on each other, and the well layer includes a first doping element. Each first film layer in the at least one first film layer includes a second doping element. The second doping element is used to adjust the doping amount of the first doping element in the well layer adjacent to the first film layer. The first doping element includes at least one of In and Al, and the emission wavelength of the quantum well structure can be adjusted according to the content of the first doping element in the well layer. The second doping element includes at least one of Al, Mg, and Si. The luminous efficiency and the emission wavelength of the quantum well structure are both related to the doping content of the first doping element in the well layer. By providing the first film layer including the above-mentioned second doping element, through the catalytic action of the second doping element, the content of the first doping element doped into the well layer when the well layer is formed can be adjusted (for example, increased or inhibited), so as to adjust the luminous efficiency of the quantum well and the wavelength of the emitted light as needed.

[0038] For example, in the embodiments of the present disclosure, the thickness of the first film layer is less than the thickness of one atomic layer, and is in a discontinuous island-like or thin-film porous state, so as to form a quantum dot structure with different contents of the first doping element in the island-like or thin-film porous region of the first film layer. Thus, through the catalytic action of the second doping element in the first film layer, the growth mode of the well layer is changed, and thus the content of the first doping element is adjusted.

[0039] Next, the quantum well structure, a preparation method thereof, and a light-emitting diode according to at least one embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. In these drawings, a spatial rectangular coordinate system is established based on the plane where the well layer is located to make a directional description of the positions of each film layer in the quantum well structure, a preparation method thereof, and a light-emitting diode. In this spatial rectangular coordinate system, the X-axis and the Y-axis are parallel to the plane where the well layer is located, and the Z-axis is perpendicular to the plane where the well layer is located.

[0040] In the embodiments of the present disclosure, as Figure 1As shown, the quantum well structure includes a quantum well 100 and a first film layer 200. The quantum well 100 includes barrier layers 111 and a well layer 112 stacked on top of each other. The well layer 112 includes a first doping element (such as at least one of In and Al), and the first film layer 200 includes a second doping element (such as at least one of Al, Mg, and Si). The second doping element is used to adjust the doping amount of the first doping element in the well layer adjacent to the first film layer. In actual operation, the first film layer 200 may include the Al element, and the first film layer 200 is AlInGaN. The first film layer 200 can play a role in electron diffusion and lattice transition, can buffer the growth of the well layer 112, and can release the stress of the well layer 112, improving the internal quantum efficiency of the well layer 112, greatly increasing the luminescence brightness of the quantum well structure, and improving the problem of reduced luminescence efficiency. In the quantum well structure provided by some embodiments of the present disclosure, the well layer may include InGaN. The first film layer 200 in the present disclosure can adjust the polarization matching with the well layer 112 through the second doping element Al, which is beneficial to the aggregation of In elements at the contact interface between the well layer 112 and the first film layer 200, adjusting the growth mode of the well layer 112, and increasing the density of In elements in the InGaN well layer 112 (in the embodiments of the present disclosure, the greater the density, the greater the content), that is, the second doping element is used to adjust the doping amount of the first doping element in the well layer adjacent to the first film layer, so as to adjust the luminescence efficiency and the wavelength of the emitted light of the quantum well as needed.

[0041] In some other embodiments of the present disclosure, the second doping element of the first film layer 200 may be the Si element. Due to the presence of the Si element, the lattice constant of the first film layer 200 is smaller than that of the well layer 112 and is mismatched with the lattice constant of the well layer 112. When the well layer 112 continues to epitaxially grow on the first film layer 200, it is not conducive to the aggregation of In elements at the contact interface between the InGaN well layer 112 and the first film layer 200. The first film layer 200 in the present disclosure adjusts the growth mode of the well layer 112 through the second doping element Si, reducing the density of In elements in the InGaN well layer 112 (in the embodiments of the present disclosure, the greater the density, the greater the content), and reducing the luminescence wavelength of the quantum well structure, that is, the second doping element adjusts the doping amount of the first doping element in the well layer 112 adjacent to the first film layer 200, so as to adjust the luminescence efficiency and the wavelength of the emitted light of the quantum well as needed.

[0042] For example, in the embodiments of the present disclosure, multiple first film layers and multiple quantum wells may be provided in the quantum well structure. Exemplarily, such as Figure 2As shown, a plurality of quantum wells 100 and a plurality of first film layers 200 are stacked on top of each other. For example, each adjacent quantum well 100 and first film layer 200 serves as a cycle unit, and the quantum well structure 10 may include a plurality of cycle units stacked on top of each other.

[0043] It should be noted that in the entire preparation process of the quantum well structure, when the potential well layer in the quantum well is formed on the first film layer, there are no restrictions on the formation order of the potential well layer and the potential barrier layer and the positional relationship between the potential well layer, the potential barrier layer, and the first film layer. For example, the potential well layer is directly grown on the surface of the first film layer; or, after forming the first film layer, in subsequent processes, other film layers (such as potential barrier layers) are formed on the first film layer, and then the potential well layer is grown on the other film layer. Below, through several specific examples, several different structures of quantum well structures will be described.

[0044] For example, in the quantum well structure provided by the embodiments of the present disclosure, a first film layer is disposed on one side of at least one potential well layer, and at least one potential well layer is grown on the first film layer. In this way, the potential well layer and the first film layer are in contact. That is, when doping the first doping element in the potential well layer after growing the potential well layer, due to the close distance between the second doping element in the potential well layer and the first film layer, the catalytic effect of the second doping element is significant, thereby improving the adjustment effect on the doping content of the first doping element (such as increasing or suppressing the doping content).

[0045] Exemplarily, as Figure 1 shown, after forming the potential barrier layer 111, the first film layer 200 is epitaxially grown on the potential barrier layer 111, and the second doping element is doped in the first film layer 200, and then the potential well layer 112 is epitaxially grown on the first film layer 200, and the first doping element is doped in the potential well layer 112. In this way, in subsequent processes, the potential barrier layer 111 can be epitaxially grown on the potential well layer 112 again, and then the above process flow is repeated to obtain a quantum well structure including a plurality of quantum wells and a plurality of first film layers.

[0046] For example, for the quantum well structure as Figure 1 shown, in each cycle unit, the first film layer 200 can be formed first, then the potential well layer 112 is formed on the first film layer 200, and then the potential barrier layer 111 is formed on the potential well layer.

[0047] For example, in the quantum well structure provided by the embodiments of the present disclosure, first film layers are disposed adjacent to both sides of at least one potential well layer. In this way, first film layers doped with the second doping element are symmetrically disposed on both sides of the potential well layer. When doping the first doping element in the potential well layer, the catalytic effect of the second doping element is more significant, thereby further improving the adjustment effect on the doping content of the first doping element (such as increasing or suppressing the doping content).

[0048] For example, Figure 3 As shown, in each cycle unit, a first film layer 200 may be formed, and then a potential well layer 112 may be epitaxially grown on the first film layer 200, and then the first film layer 200 may be epitaxially grown on the potential well layer 112. In this embodiment, the first film layer 200 may include Al element, the first film layer may be AlInGaN, and the potential well layer 112 may include InGaN. The first film layer 200 below the potential well layer 112 (the side of the potential well layer 112 facing the substrate) plays a role in adjusting the polarization matching with the potential well layer 112 through the second doping element Al element, which is beneficial to the aggregation of In elements at the contact interface between the potential well layer 112 and the first film layer 200, adjusts the growth mode of the potential well layer 112, and increases the density of In elements in the InGaN potential well layer 112; the first film layer 200 above the potential well layer 112 (the side of the potential well layer 112 facing away from the substrate) contains Al elements, which increases the threshold voltage between the potential well layer 112 and the barrier layer 111, and can reduce the efficiency of electron-hole pair recombination on the electron transition path when there is no current injection, thereby improving the quantum well luminescence efficiency.

[0049] The barrier layer 111 may be Figure 3 The barrier layer is shown to be formed before a stack consisting of a first film layer 200, a potential well layer 112 and another first film layer 200, or the barrier layer may be formed after the stack.

[0050] For example, in the quantum well structure provided by the embodiment of the present disclosure, a first film layer is inserted into at least one barrier layer. For example, the distance between the first film layer and the adjacent potential well layer is less than or equal to 2 nm. In this way, the incorporation content of the second doping element in the potential well layer formed on the barrier layer can be adjusted by inserting the first film layer into the barrier layer without affecting the degree of lattice difference between the potential well layer and the barrier layer.

[0051] For example, Figure 4 As shown, in each cycle unit, the first film layer 200 is inserted into the barrier layer 111. For example, the barrier layer 111 includes a first sub-barrier layer 1111 and a second sub-barrier layer 1112. In the preparation process of each cycle unit, the first sub-barrier layer 1111 can be formed first, and then the first film layer 200 is epitaxially grown on the first sub-barrier layer 1111, and then the second sub-barrier layer 1112 is epitaxially grown on the first film layer 200, and then the potential well layer 112 is epitaxially grown on the second sub-barrier layer 1112.

[0052] In the embodiments of the present disclosure, the content distribution of the second doping element in the first film layer can be adjusted, so as to control the incorporated content of the first doping element in the potential well layer formed in the subsequent process.

[0053] For example, in the quantum well structure provided by the embodiments of the present disclosure, the content of the second doping element in the first film layer is either gradient or stepped, and the content of the second doping element in the first film layer close to the adjacent quantum well layer is greater than that in the first film layer far from the adjacent quantum well layer. In this way, it can be ensured that the part of the first film layer close to the quantum well layer includes sufficient second doping elements to adjust the doping amount of the first doping element in the quantum well layer, while minimizing the adverse effect on other film layers (such as the barrier layer) caused by excessive first doping elements in the part of the first film layer far from the quantum well layer.

[0054] For example, in the quantum well structure provided by some embodiments of the present disclosure, the second doping element includes at least one of Al and Mg, and the second doping element adjusts to increase the doping amount of the first doping element in the quantum well layer adjacent to the first film layer. In this way, the second doping element has a positive catalytic effect, and the second doping element can promote the incorporation content of the first doping element during doping, enabling the quantum well structure to achieve the function of emitting light with a longer electroluminescence wavelength. In this case, the first film layer acts as a positive catalyst.

[0055] For example, in the quantum well structure provided by some other embodiments of the present disclosure, the second doping element is Si, and the second doping element adjusts to reduce the doping of the first doping element in the quantum well layer adjacent to the first film layer. In this way, the second doping element has a reverse catalytic effect, and the second doping element can inhibit the incorporation content of the first doping element during doping, enabling the quantum well structure to achieve the function of emitting light with a shorter electroluminescence wavelength. In this case, the first film layer acts as a reverse catalyst.

[0056] The quantum well structure can be grown on a wafer. During the preparation process, controlled by the growth process, the wafer is unevenly heated. If the temperature is low and there is too much first doping element in a region, a reverse catalyst is used in this region to reduce the incorporation of the first doping element; if the temperature is high and it is not conducive to the incorporation of the first doping element, a positive catalyst is used in this region.

[0057] For example, in the quantum well structure provided by some embodiments of the present disclosure, the quantum well layer includes at least one of InGaN and AlGaN, and at least one first film layer includes at least one of AlInGaN and MgInGaN.

[0058] For example, in the quantum well structure provided by some embodiments of the present disclosure, in the potential well layer, the material composition ratio of the first doping element and Ga is between 0:100 and 40:60, for example, further 10:90, 20:80, 30:70, etc. In at least one first film layer, the material composition ratio of the sum of In and Ga to the second doping element is between 80:20 and 99:1, for example, further 90:10, 95:5, 97:3, etc.

[0059] The embodiment of the present disclosure provides a light-emitting diode, which includes a substrate, an N-type layer, a P-type layer and the quantum well structure in the above embodiment. The N-type layer is located on the substrate. The P-type layer is located on the side of the N-type layer away from the substrate. The quantum well structure is located between the N-type layer and the P-type layer. From the direction of the N-type layer to the P-type layer, the potential well layer and the potential barrier layer in each quantum well are arranged in sequence.

[0060] For example, Figure 5 As shown, the light emitting diode includes a quantum well structure 10, a substrate 20, an N-type layer 40 and a P-type layer 50. The N-type layer 40, the quantum well structure 10 and the P-type layer 50 are sequentially stacked on the substrate 20. The N-type layer 40 may be an N-type GaN layer, and the P-type layer 50 may be a P-type GaN layer.

[0061] For example, the substrate 20 may be a sapphire substrate, a GaN-based substrate, a Si-based substrate, a SiC-based substrate, a SiN-based substrate, a glass substrate, or the like.

[0062] For example, in the light-emitting diode provided in the embodiment of the present disclosure, a plurality of grooves may be provided in the N-type layer, and a DBR (Distributed Bragg Reflector mirror) structure and / or a photonic crystal structure may be provided in the groove. The DBR structure and / or the photonic crystal structure may be used to screen light in a specific wavelength range, thereby improving the degree of monochromaticity of the light emitted by the light-emitting diode. The DBR structure is composed of at least two semiconductor materials or dielectric materials that grow in an interlaced manner, and the DBR structure may be used to obtain a high reflectivity for waves in a certain frequency range (equivalent to light in a certain wavelength range). A photonic crystal is a periodic dielectric structure having a photonic band gap (PBG) characteristic. In this periodic structure, waves in a certain frequency range cannot propagate.

[0063] For example, in the light-emitting diode provided in the embodiment of the present disclosure, the light-emitting diode may further include a u-shaped layer. Figure 5 As shown, the u-type layer 30 is located between the N-type layer 40 and the substrate 20. For example, the u-type layer 30 may be a u-type GaN film layer.

[0064] For example, in an embodiment of the present disclosure, the light-emitting diode may further include a buffer layer, which is located between the substrate and the N-type layer 40. For example, the material included in the buffer layer may be one or a combination of AlN, GaN, AlGaN, and InGaN. The buffer layer can greatly relieve the stress that occurs when the epitaxial layer is grown on the silicon substrate and achieve dislocation filtering, thereby improving the crystal quality of the epitaxial layer. For example, the buffer layer can also act as a planarization layer. When the buffer layer is formed on the substrate, the surface of the light-emitting diode including the substrate is planarized, improving the planarization of the N-type layer, the film layers in the quantum well structure, the P-type layer, etc. prepared subsequently, and ensuring the manufacturing yield of the light-emitting diode.

[0065] An embodiment of the present disclosure provides a light-emitting component, which includes a plurality of light-emitting diodes, and the light-emitting diodes may be the light-emitting diodes in the foregoing embodiments. For example, the plurality of light-emitting diodes are arranged to emit at least two colors of light. For example, the light-emitting component is arranged to emit three colors of light, red, green, and blue. The adjacent light-emitting diodes that emit different colors are combined into a unit. In this way, the unit can selectively emit light of colors such as white light and colored light as needed. For example, further, the light-emitting component can be used in the display field, and the unit can be used as a display unit (equivalent to a pixel) for displaying images.

[0066] For example, in an embodiment of the present disclosure, the light-emitting component may be a display panel. Exemplarily, as Figure 6 shown, the light-emitting component (display panel) includes three types of light-emitting diodes 1, 2, and 3. The light-emitting diodes 1, 2, and 3 are arranged to emit three colors of light (for example, red, green, and blue) respectively. The adjacent light-emitting diodes 1, 2, and 3 serve as a display unit (pixel), and the light-emitting diodes 1, 2, and 3 serve as sub-pixels respectively.

[0067] In an embodiment of the present disclosure, the light-emitting component (display panel) can be used in the AR or VR display field. Exemplarily, the light-emitting component is used in AR glasses. The AR glasses include a waveguide lens and an optical component. The light emitted by the light-emitting component (equivalent to the displayed image) enters the waveguide lens after passing through the optical component (for example, including a magnifying glass, etc.), and then the light is guided into the human eye by the waveguide lens. At the same time, the human eye can observe the image of the surrounding environment through the waveguide lens. In this way, the displayed image observed by the human eye is projected onto the environmental image, realizing augmented reality display.

[0068] An embodiment of the present disclosure provides a method for preparing a quantum well structure, as Figure 7As shown, the preparation method includes: forming a barrier layer; forming a first film layer stacked with the barrier layer, the first film layer including a second doping element, and the second doping element including at least one of Al, Mg, and Si; forming a quantum well layer on the first film layer, the quantum well layer including a first doping element, and the second doping element being used to adjust the doping amount of the first doping element in the quantum well layer adjacent to the first film layer, and the first doping element including at least one of In and Al. The luminous efficiency and luminous wavelength of the quantum well structure are related to the doping content of the first doping element in the quantum well layer. In this preparation method, by providing the first film layer including the above-mentioned second doping element, through the catalytic action of the second doping element, the content of the first doping element doped into the quantum well layer during its formation can be adjusted (for example, increased or inhibited), so as to adjust the luminous efficiency of the quantum well and the wavelength of the emitted light as needed. For the specific structure of the quantum well structure obtained by this preparation method, reference can be made to the relevant descriptions in the foregoing embodiments, which will not be elaborated here.

[0069] The foregoing is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent replacements, etc. made within the spirit and principle of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. A quantum well structure, characterized in that, include: At least one quantum well, each quantum well in the at least one quantum well comprises a potential well layer and a potential barrier layer stacked on each other, and the potential well layer comprises a first doping element; At least one first film layer, each of the at least one first film layer comprises a second doping element, and the second doping element is used to adjust the doping amount of the first doping element in the potential well layer adjacent to the first film layer; Wherein, the second doping element includes at least one of Al and Mg, and the second doping element is used to increase the doping amount of the first doping element in the potential well layer adjacent to the first film layer; or The second doping element is Si, and the second doping element adjusts the doping amount of the first doping element in the potential well layer adjacent to the first film layer to decrease.

2. The quantum well structure according to claim 1, characterized in that: The first film layer is disposed on one side of at least one of the potential well layers, and at least one of the potential well layers is grown on the first film layer.

3. The quantum well structure according to claim 1, characterized in that: The first film layer is disposed adjacent to both sides of at least one of the potential well layers.

4. The quantum well structure according to claim 1, characterized in that: The first film layer is inserted into at least one of the barrier layers, and a distance between the first film layer and an adjacent potential well layer is less than or equal to 2 nm.

5. The quantum well structure according to any one of claims 2-4, characterized in that The content of the second doping element in the first film layer is divided into a gradual or step-type, and the content of the second doping element in the first film layer close to the adjacent potential well layer is greater than the content of the second doping element in the first film layer far from the adjacent potential well layer.

6. The quantum well structure according to any one of claims 1 to 4, characterized in that: The potential well layer includes at least one of InGaN and AlGaN; and The at least one first film layer includes at least one of AlInGaN and MgInGaN.

7. The quantum well structure according to claim 6, characterized in that: In the potential well layer, the material composition ratio of the first doping element to Ga is between 0:100 and 40:60; and In the at least one first film layer, a material composition ratio of the sum of In and Ga to the second doping element is between 80:20 and 99:

1.

8. The quantum well structure according to any one of claims 1 to 4, characterized in that: The at least one first film layer includes a plurality of first film layers, the at least one quantum well includes a plurality of quantum wells stacked one on another, and At least one quantum well is grown on each of the plurality of first film layers.

9. A light-emitting diode, characterized in that, include: substrate; An N-type layer, located on the substrate; A P-type layer, located on a side of the N-type layer away from the substrate; as well as The quantum well structure according to any one of claims 1 to 8 is located between the N-type layer and the P-type layer, and the potential well layer and the potential barrier layer in each quantum well are arranged in sequence in the direction from the N-type layer to the P-type layer.

10. A preparation method of a quantum well structure, characterized in that, include: Forming a barrier layer; Form a first film layer stacked with the barrier layer, the first film layer including a second doping element, the second doping element including at least one of Al, Mg, and Si, wherein the second doping element includes at least one of Al and Mg, and the second doping element is used to adjust an increase in the doping amount of a first doping element in a quantum well layer adjacent to the first film layer; or The second doping element is Si, and the second doping element is used to adjust a decrease in the doping amount of the first doping element in the quantum well layer adjacent to the first film layer; And Form a quantum well layer on the first film layer, the quantum well layer including the first doping element, and the second doping element is used to adjust the doping amount of the first doping element in the quantum well layer adjacent to the first film layer, and the first doping element includes at least one of In and Al.

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