Electronic device

Abstract

The present disclosure provides an electronic device, including a circuit board, an inorganic light-emitting unit, and an opaque layer. The circuit board includes a photosensor. The inorganic light-emitting unit is disposed on the circuit board and configured to emit a light beam. The opaque layer is disposed on the circuit board and includes a first opening. A part of the light beam is transmitted through the first opening to the photosensor.

Description

Technical Field

[0001] This disclosure relates to an electronic device. Background Art

[0002] Existing electronic devices integrate a sensing module therein to provide an identity recognition (such as fingerprint sensing) function. However, the current approach requires additional fabrication of an optical structure corresponding to the sensing module, resulting in an increase in the manufacturing process. Summary of the Invention

[0003] This disclosure provides an electronic device with a relatively simplified manufacturing process.

[0004] According to an embodiment of this disclosure, the electronic device includes a circuit board, an inorganic light-emitting unit, and an opaque layer. The circuit board includes an optical sensor. The inorganic light-emitting unit is disposed on the circuit board and is configured to emit a light beam. The opaque layer is disposed on the circuit board and includes a first opening. A portion of the light beam is transmitted through the first opening to the optical sensor.

[0005] To make the above features and advantages of this disclosure more obvious and understandable, specific embodiments are given below and described in detail in conjunction with the accompanying drawings. Brief Description of the Drawings

[0006] Figures 1 to 4 , Figures 6 to 13 , Figure 15 , Figure 17 and Figure 18 are partial cross-sectional schematic views of an electronic device according to some embodiments of this disclosure;

[0007] Figure 5 is Figure 4 a partial top-down schematic view of the electronic device;

[0008] Figure 14 is Figure 13 a partial top-down schematic view of the electronic device, Figure 14 the cross-section line I-I' in Figure 13 can be referred to the area RI in

[0009] Figure 16 is Figure 15 a partial top-down schematic view of the electronic device, Figure 16 the cross-section line II-II' in Figure 15 can be referred to the area RII in Detailed Description of the Embodiments

[0010] Reference will now be made in detail to the exemplary embodiments of this disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0011] Throughout this specification and the appended claims, certain terms will be used to refer to particular elements. Those skilled in the art should understand that electronic device manufacturers may refer to the same element by different names. This document is not intended to distinguish between elements that perform the same function but have different names. In the following specification and claims, words such as "comprising" and "including" are open-ended terms and should therefore be interpreted as meaning "including but not limited to...".

[0012] Directional terms mentioned herein, such as "upper", "lower", "front", "rear", "left", "right", etc., are only with reference to the directions in the accompanying drawings. Therefore, the directional terms used are for illustration purposes and not for limiting this disclosure. In the drawings, each drawing shows the general characteristics of the methods, structures, and / or materials used in a particular embodiment. However, these drawings should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative sizes, thicknesses, and positions of each film layer, region, and / or structure may be reduced or enlarged.

[0013] When a structure (or layer, element, substrate) described in this disclosure is located "above" or "on top of" another structure (or layer, element, substrate), it may mean that the two structures are adjacent and directly connected, or it may mean that the two structures are adjacent but not directly connected. Non-direct connection means that there is at least one intermediate structure (or intermediate layer, intermediate element, intermediate substrate, intermediate spacer) between the two structures. The lower surface of one structure is adjacent or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure is adjacent or directly connected to the lower surface of the intermediate structure. The intermediate structure can be composed of a single-layer or multi-layer solid structure or non-solid structure, without limitation. In this disclosure, when a certain structure is disposed "on" another structure, it may mean that the certain structure is "directly" on the other structure, or it may mean that the certain structure is "indirectly" on the other structure, that is, there is at least one structure sandwiched between the certain structure and the other structure.

[0014] The terms "about", "equal to", "equivalent to" or "the same as", "substantially" or "approximately" are generally interpreted as being within 20% of the given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of the given value or range.

[0015] Ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify elements. They do not themselves imply or represent that the element (or those elements) has any previous ordinal number, nor do they represent the order of one element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish an element with a certain name from another element with the same name. The same terms need not be used in the claims and the specification. Accordingly, the first component in the specification may be the second component in the claims.

[0016] The electrical connections or couplings described in this disclosure can refer to direct connections or indirect connections. In the case of a direct connection, the endpoints of the components on two circuits are directly connected or connected to each other by a conductor segment. In the case of an indirect connection, there are switches, diodes, capacitors, inductors, resistors, other suitable components, or combinations of the above components between the endpoints of the components on two circuits, but not limited thereto.

[0017] In this disclosure, the thickness, length, and width can be measured by using an optical microscope, and the thickness or width can be measured from a cross-sectional image in an electron microscope, but not limited thereto. Additionally, there may be a certain error between any two numerical values or directions used for comparison. In addition, the terms "equal to", "equal", "the same", "substantially", or "substantially" mentioned in this disclosure generally represent within 10% of a given numerical value or range. Furthermore, the expressions "a given range is from a first numerical value to a second numerical value" and "a given range falls within the range from the first numerical value to the second numerical value" mean that the given range includes the first numerical value, the second numerical value, and other numerical values therebetween. If a first direction is perpendicular to a second direction, the angle between the first direction and the second direction can be between 80 degrees and 100 degrees; if a first direction is parallel to a second direction, the angle between the first direction and the second direction can be between 0 degrees and 10 degrees.

[0018] It should be noted that, without departing from the spirit of this disclosure, the features in several different embodiments can be replaced, reorganized, and mixed to complete other embodiments in the following examples. As long as the features between the embodiments do not violate the spirit of the invention or conflict with each other, they can be arbitrarily mixed and used.

[0019] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the technical field to which this disclosure belongs. It can be understood that these terms, such as those defined in a commonly used dictionary, should be interpreted as having a meaning consistent with the relevant technology and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this disclosure.

[0020] In the present disclosure, the electronic device may include a display device, a backlight device, an antenna device, a sensing device, or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device. The sensing device may be a sensing device for sensing capacitance, light, heat, or ultrasonic waves, but is not limited thereto. In the present disclosure, electronic components may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light-emitting diode or a photodiode. The light-emitting diode may, for example, include an organic light-emitting diode (OLED), a mini light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (quantum dot LED), but is not limited thereto. The splicing device may, for example, be a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any permutation and combination of the foregoing, but is not limited thereto. The following will illustrate the content of the present disclosure by taking the display device as the electronic device or the splicing device, but the present disclosure is not limited thereto.

[0021] It should be noted that the technical solutions provided in different embodiments below may be replaced, combined, or used in combination with each other to form another embodiment without violating the spirit of the present disclosure.

[0022] Figures 1 to 4 , Figures 6 to 13 , Figure 15 , Figure 17 and Figure 18 are partial cross-sectional schematic diagrams of an electronic device according to some embodiments of the present disclosure. Figure 5 is Figure 4 a partial top view schematic diagram of the electronic device. Figure 14 is Figure 13 a partial top view schematic diagram of the electronic device, Figure 14 The section line I-I' in Figure 13 may refer to the area RI in Figure 16 is Figure 15 a partial top view schematic diagram of the electronic device, Figure 16 The section line II-II' in Figure 15 may refer to the area RII in

[0023] Please refer to Figure 1, the electronic device 1 may include a circuit board 10, an inorganic light-emitting unit 11, and an opaque layer 12. The circuit board 10 includes a photosensor 100. The inorganic light-emitting unit 11 is disposed on the circuit board 10 and is configured to emit a light beam B. The opaque layer 12 is disposed on the circuit board 10 and includes a first opening A1. A part of the light beam B (such as the light beam B') is transmitted to the photosensor 100 through the first opening A1. In the present disclosure, the inorganic light-emitting unit 11 may be replaced by any one or a combination of the aforementioned exemplified electronic components.

[0024] Specifically, the circuit board 10 may include a complementary metal oxide semiconductor (CMOS) backplane formed by doping on a semiconductor substrate to form semiconductor elements, or a thin film transistor (TFT) backplane formed by a thin film process on a substrate, but is not limited thereto.

[0025] Taking the CMOS backplane as an example, the circuit board 10 may include a semiconductor substrate 102, and the photosensor 100 may be embedded in the semiconductor substrate 102. The material of the semiconductor substrate 102 may include semiconductor materials such as single crystal silicon, polycrystalline silicon, silicon carbide, gallium nitride, or germanium. The photosensor 100 being embedded in the semiconductor substrate 102 means that a photosensitive semiconductor element capable of sensing a light beam is formed in the semiconductor substrate 102 through an ion implantation process.

[0026] In some embodiments, as Figure 1 shown, the semiconductor substrate 102 may include an N-type silicon substrate SUB, a P-type doped region PR may be formed in the N-type silicon substrate SUB through an ion implantation process, and the photosensor 100 may include a photodiode composed of the P-type doped region PR and a partial N-type silicon substrate SUB, but the type of the photosensor 100 is not limited thereto. In other embodiments, the photosensor 100 may be a photo-transistor, a metal-semiconductor-metal photodetector (MSM photo-detector), or a camera, but is not limited thereto.

[0027] In addition to the P-type doped region PR, a source region SR and a drain region DR may also be formed in the N-type silicon substrate SUB through an ion implantation process. Figure 1 One P-type doped region PR, two source regions SR, and two drain regions DR are schematically shown, but the respective numbers of the P-type doped region PR, source region SR, and drain region DR in the circuit board 10 or the relative arrangement relationship of the above components may be changed according to requirements and are not limited to Figure 1 that shown.

[0028] According to different requirements, the circuit board 10 may include other film layers. For example, the circuit board 10 may further include a dielectric layer 104, a conductive layer 105, a dielectric layer 106, a conductive layer 107, a dielectric layer 108, a conductive layer 109, and a conductive layer 110, but not limited thereto.

[0029] The dielectric layer 104 is disposed on the semiconductor substrate 102 and covers the P-type doped region PR, the source region SR, and the drain region DR. The material of the dielectric layer 104 may include inorganic materials such as silicon oxide (SiO x ) or silicon nitride (SiN x ), but not limited thereto.

[0030] The conductive layer 105 is disposed on the dielectric layer 104. The material of the conductive layer 105 may include metals or metal stacks such as aluminum, copper, molybdenum, titanium, or combinations thereof, but not limited thereto. The conductive layer 105 may be a patterned conductive layer, and the conductive layer 105 may include a gate GE, an anode AE, and other circuits (not shown), but not limited thereto. The anode AE can electrically connect the P-type doped region PR to the adjacent drain region DR through a via TH1 penetrating the dielectric layer 104.

[0031] The dielectric layer 106 is disposed on the dielectric layer 104 and covers the conductive layer 105. The material of the dielectric layer 106 may include inorganic materials such as silicon oxide or silicon nitride, but not limited thereto.

[0032] The conductive layer 107 is disposed on the dielectric layer 106. The material of the conductive layer 107 may include metals or metal stacks such as aluminum, copper, molybdenum, titanium, or combinations thereof, but not limited thereto. The conductive layer 107 may be a patterned conductive layer, and the conductive layer 107 may include a source SE, a drain DE, a common electrode ME, and other circuits (not shown), but not limited thereto. The source SE can be electrically connected to the corresponding source region SR through a via TH2 penetrating the dielectric layer 104 and the dielectric layer 106. The drain DE can be electrically connected to the corresponding drain region DR through the corresponding via TH2.

[0033] The dielectric layer 108 is disposed on the dielectric layer 106 and covers the conductive layer 107. The material of the dielectric layer 108 may include inorganic materials such as silicon oxide or silicon nitride, but not limited thereto.

[0034] The conductive layer 109 is disposed on the dielectric layer 108. The material of the conductive layer 109 may include a metal or a metal stack, such as aluminum, copper, molybdenum, titanium, or a combination thereof, but is not limited thereto. The conductive layer 109 may be a patterned conductive layer, and the conductive layer 109 may include pads P1, pads P2, and other lines (not shown), but is not limited thereto. The pad P1 may be electrically connected to the corresponding drain DE through a via TH3 penetrating the dielectric layer 108. The pad P2 may be electrically connected to the corresponding common electrode ME through the corresponding via TH3.

[0035] The conductive layer 110 is disposed on the surface of the semiconductor substrate 102 away from the P-type doped region PR. The material of the conductive layer 110 may include a metal or a metal stack, such as aluminum, copper, molybdenum, titanium, or a combination thereof, but is not limited thereto. The conductive layer 110 may be a patterned conductive layer, and the conductive layer 110 may include a cathode CE. The cathode CE is located, for example, below the P-type doped region PR.

[0036] The inorganic light-emitting unit 11 may be bonded to the pads P1 and the pads P2 through a conductive member C, for example. The conductive member C may include solder, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or other conductive bonding members. The inorganic light-emitting unit 11 may include a mini light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (quantum dot LED), but is not limited thereto. In some embodiments, the inorganic light-emitting unit 11 may be a light-emitting diode chip, but is not limited thereto. In other embodiments, the inorganic light-emitting unit 11 may be a light-emitting diode package.

[0037] The opaque layer 12 is disposed on the dielectric layer 108 and may partially cover the pads P1 and the pads P2, but is not limited thereto. The transmittance of the opaque layer 12 for the light beam B is, for example, less than 50%. For example, a light source and an illuminometer may be respectively disposed on opposite sides of the electronic device to measure the transmittance of the opaque layer 12. The transmittance is defined as the light intensity received by the illuminometer divided by the light intensity output by the light source.

[0038] In some embodiments, the material of the opaque layer 12 may include a black resin, a white resin, or a gray resin, but is not limited thereto. In other embodiments, the metal layer in the circuit board 10 may be used as the opaque layer 12. The sidewalls of the opaque layer 12 may be provided with a metal material to improve the reflectivity.

[0039] The first opening A1 of the opaque layer 12 is disposed corresponding to the photosensor 100. In some embodiments, the first opening A1 at least partially overlaps with the photosensor 100 in the top view direction (such as direction Z) of the electronic device 1, but is not limited thereto. In other embodiments, the first opening A1 may not overlap with the photosensor 100 in the top view direction (such as direction Z) of the electronic device 1. The first opening A1 enables a part of the light beam B (such as the light beam B' reflected by the object to be measured) to be transmitted to the photosensor 100, and the first opening A1 can also filter stray light and reduce the probability of the photosensor 100 receiving stray light.

[0040] In some embodiments, the opaque layer 12 may further include a second opening A2. The second opening A2 exposes the pads P1 and P2, and the inorganic light-emitting unit 11 may be disposed in the second opening A2.

[0041] According to different requirements, the electronic device 1 may further include other components or film layers. For example, the electronic device 1 may further include a light-transmitting layer 14. The light-transmitting layer 14 is filled in the first opening A1 and the second opening A2. The material of the light-transmitting layer 14 may include organic materials, inorganic materials, or bonding materials, but is not limited thereto. Organic materials may include polymethyl methacrylate (PMMA), epoxy resin, acrylic-based resin, silicone, polyimide polymer, or a combination of the above, but is not limited thereto. Inorganic materials may include silicon oxide or silicon nitride, but is not limited thereto. Bonding materials may include Optical Clear Adhesive (OCA) or Optical Clear Resin (OCR), but is not limited thereto. The light-transmitting layer 14 may be formed by stacking multiple layers of materials, and the light-transmitting layer 14 may be a color-resist material that allows light of a specific wavelength band to pass through.

[0042] By integrating the photosensor 100 in the circuit board 10 and forming the first opening A1 that allows light to pass through and the second opening A2 that accommodates the inorganic light-emitting unit 11 in the opaque layer 12, it is possible not to separately manufacture an optical structure (such as a light-shielding structure or a light-collimating structure) corresponding to the sensing module (photosensor 100), and thus the manufacturing process can be relatively simplified.

[0043] In some embodiments, the electronic device 1 may provide an identity recognition function, such as a fingerprint sensing function, that is, the photosensor 100 is used to sense the fingerprint F, but is not limited thereto. In other embodiments, the photosensor 100 may be used to sense palm prints or other biometric features.

[0044] Please refer to Figure 2 the electronic device 1A and Figure 1The main differences of the electronic device 1 are described as follows. In the electronic device 1A, the circuit board 10A is, for example, a TFT backplane, and the circuit board 10A further includes a substrate 102A. The photosensor 100 is disposed on the substrate 102A.

[0045] Specifically, the substrate 102A may include a flexible substrate or a rigid substrate. The material of the substrate 102A may include glass, plastic, ceramic, quartz, sapphire, or a combination of the above materials, but is not limited thereto. The photosensor 100 may be formed on the substrate 102A by a thin film process.

[0046] In some embodiments, the circuit board 10A may further include a buffer layer 111, a buffer layer 112, a semiconductor layer 113, a dielectric layer 114, a conductive layer 115, a dielectric layer 116, a dielectric layer 117, a conductive layer 118, a dielectric layer 119, a conductive layer 120, a dielectric layer 121, and a conductive layer 109A, but is not limited thereto. According to different requirements, the circuit board 10A may add or subtract one or more components or film layers.

[0047] The buffer layer 111 and the buffer layer 112 are sequentially disposed on the substrate 102A. For example, the materials of the buffer layer 111 and the buffer layer 112 may include inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide, or organic materials such as perfluoroalkoxy alkane (PFA), but are not limited thereto.

[0048] The semiconductor layer 113 is disposed on the buffer layer 112. For example, the material of the semiconductor layer 113 includes an oxide semiconductor material such as Indium Gallium Zinc Oxide (IGZO), but is not limited thereto. In other embodiments, the material of the semiconductor layer 113 may include amorphous silicon, polysilicon, or a metal oxide. The semiconductor layer 113 is, for example, a patterned semiconductor layer and may include a plurality of semiconductor patterns 113P. The semiconductor pattern 113P may include a channel region CH, a source region SR, and a drain region DR, where the channel region CH is located between the source region SR and the drain region DR.

[0049] The dielectric layer 114 is disposed on the buffer layer 112 and covers the semiconductor layer 113. For example, the material of the dielectric layer 114 may include inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide, or organic materials such as perfluoroalkoxy alkane (PFA), but are not limited thereto.

[0050] The conductive layer 115 is disposed on the dielectric layer 114. The material of the conductive layer 115 may include a metal or a metal stack, such as aluminum, copper, molybdenum, titanium, or a combination thereof, but is not limited thereto. The conductive layer 115 may be a patterned conductive layer, and the conductive layer 115 may include a gate GE and other lines (not shown), but is not limited thereto. The gate GE is disposed above the channel region CH, and the gate GE overlaps the channel region CH in the Z direction.

[0051] The dielectric layer 116 and the dielectric layer 117 are sequentially disposed on the buffer layer 112 and cover the conductive layer 115. The material of the dielectric layer 116 may include an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide, or an organic material, such as perfluoroalkoxy alkane (PFA), but is not limited thereto.

[0052] The conductive layer 118 is disposed on the dielectric layer 117. The material of the conductive layer 118 may include a metal or a metal stack, such as aluminum, copper, molybdenum, titanium, or a combination thereof, but is not limited thereto. The conductive layer 118 may be a patterned conductive layer, and the conductive layer 118 may include a source SE, a drain DE, and other lines (not shown), but is not limited thereto. The source SE may be electrically connected to the corresponding source region SR through a via TH4 that penetrates the dielectric layer 117, the dielectric layer 116, and the dielectric layer 114. The drain DE may be electrically connected to the corresponding drain region DR through the corresponding via TH4.

[0053] The dielectric layer 119 is disposed on the dielectric layer 117 and covers the conductive layer 118. The material of the dielectric layer 119 may include an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide, or an organic material, such as perfluoroalkoxy alkane (PFA), but is not limited thereto.

[0054] The conductive layer 120 is disposed on the dielectric layer 119. The material of the conductive layer 120 may include a metal or a metal stack, such as aluminum, copper, molybdenum, titanium, or a combination thereof, but is not limited thereto. The conductive layer 120 may be a patterned conductive layer, and the conductive layer 120 may include a line CK1, a line CK2, and other lines (not shown), but is not limited thereto. The line CK1 may be electrically connected to the corresponding drain DE through a via TH5 that penetrates the dielectric layer 119. The photosensor 100 is disposed on the corresponding drain DE and is located in the via TH5 that penetrates the dielectric layer 119.

[0055] The dielectric layer 121 is disposed on the dielectric layer 119 and covers the conductive layer 120 and the photosensor 100. The material of the dielectric layer 121 may include an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide, or an organic material, such as perfluoroalkoxy alkane (PFA), but is not limited thereto.

[0056] The conductive layer 109A is disposed on the dielectric layer 121. The material of the conductive layer 109A may include a metal or a metal stack, such as aluminum, copper, molybdenum, titanium, or a combination thereof, but is not limited thereto. The conductive layer 109A may be a patterned conductive layer, and the conductive layer 109A may include pads P1, pads P2, an electrode UP, and other lines (not shown), but is not limited thereto. The pad P1 may be electrically connected to the corresponding drain DE through a via TH6 penetrating the dielectric layer 121. The pad P2 may be electrically connected to the line CK2 through the corresponding via TH6. The electrode UP may be electrically connected to the photosensor 100 through the corresponding via TH6.

[0057] The opaque layer 12 is disposed on the dielectric layer 121 and may cover the electrode UP and may partially cover the pad P1 and the pad P2, but is not limited thereto. The light-transmissive layer 14 is disposed on the opaque layer 12 and fills the first opening A1 and the second opening A2.

[0058] Please refer to Figure 3 for the main differences between the electronic device 1B and the Figure 1 electronic device 1 described as follows. In the electronic device 1B, the opaque layer 12' includes metal pads (such as pads P1 and pads P2), and the inorganic light-emitting unit 11 is bonded to the metal pads (such as pads P1 and pads P2). The pad P2 in the conductive layer 109B may extend above the photosensor 100, and the pad P2 may include a first opening A1'. By using the conductive layer 109B in the circuit board 10B as the opaque layer 12', the Figure 1 opaque layer 12 can be omitted.

[0059] In some embodiments, in addition to the source SE, the drain DE, and the common electrode ME, the conductive layer 107B in the circuit board 10B may further include a pattern 107P disposed above the photosensor 100, and the pattern 107P may include a third opening A3. The third opening A3 may overlap or partially overlap with the first opening A1' in the Z direction.

[0060] Utilizing the opening design of the multi-layer metal layers (such as the conductive layer 107B and the conductive layer 109B) disposed above the photosensor 100 to filter stray light helps reduce the probability of the photosensor 100 receiving stray light. In some embodiments, the width of the opening of the metal layer closer to the photosensor 100 may be made smaller than the width of the opening of the metal layer farther from the photosensor 100, that is, the bottom width WA3 of the third opening A3 is made smaller than the bottom width WA1' of the first opening A1', to enhance the effect of filtering stray light, but is not limited thereto.

[0061] It should be understood that the electronic device of any embodiment of the present disclosure can utilize the opening design of the multi-layer metal layers (such as the conductive layer 107B and the conductive layer 109B) disposed above the optical sensor 100 to filter stray light, which will not be repeated hereinafter.

[0062] Please refer to Figure 4 and Figure 5 , the main differences between the electronic device 1C and Figure 3 the electronic device 1B are described as follows. The electronic device 1C further includes a metal mesh layer 15 to provide a touch function. The metal mesh layer 15 is disposed on the inorganic light-emitting unit 11. For example, the metal mesh layer 15 can be disposed on the light-transmissive layer 14, but not limited thereto. The metal mesh layer 15 may include a third opening A3', and the third opening A3' overlaps with the first opening A1' such that the light beam reflected by the object to be measured can be transmitted to the optical sensor 100. The overlap of the third opening A3' and the first opening A1' generally means that the third opening A3' and the first opening A1' overlap with each other in the top view direction (direction Z) of the electronic device 1C. In some embodiments, the bottom width WA1' of the first opening A1' can be made smaller than the bottom width WA3' of the third opening A3' to improve the effect of filtering stray light, but not limited thereto.

[0063] In addition to the third opening A3' corresponding to the optical sensor 100, the metal mesh layer 15 may further include a second opening A2' that overlaps with the inorganic light-emitting unit 11 in the direction Z, but not limited thereto. In other embodiments, although not shown, the size of the third opening A3' can be enlarged such that the third opening A3' overlaps with an optical sensor 100 and an inorganic light-emitting unit 11 in the direction Z.

[0064] In the structure where the metal mesh layer 15 is provided, the wiring substrate 10C may not include Figure 3 the pattern 107P, that is, in the wiring substrate 10C, the conductive layer 107 can replace Figure 3 the conductive layer 107B, but not limited thereto. In other embodiments not shown, the wiring substrate 10C may include Figure 3 the pattern 107P, that is, replace the conductive layer 107 with Figure 3 the conductive layer 107B.

[0065] It should be understood that the electronic device of any embodiment of the present disclosure can utilize the opening design of the multi-layer metal layers (such as the conductive layer 107B, the conductive layer 109B, and / or Figure 3 the conductive layer 107B) disposed above the optical sensor 100 to filter stray light, which will not be repeated hereinafter.

[0066] Please refer to Figure 6 , the electronic device 1D and Figure 1The main differences of the electronic device 1 are described as follows. In the electronic device 1D, the photosensor 100 and the first opening A1 partially overlap in the Z direction, so that the light beam B' obliquely incident on the photosensor 100 can be received by the photosensor 100.

[0067] Please refer to Figure 7 , the main differences between the electronic device 1E and Figure 4 the electronic device 1C are described as follows. In the electronic device 1E, the third opening A3' and the first opening A1' partially overlap in the Z direction, so that the light beam B' obliquely incident on the photosensor 100 can be received by the photosensor 100.

[0068] Please refer to Figure 8 , the main differences between the electronic device 1F and Figure 4 the electronic device 1C are described as follows. In the electronic device 1F, the third opening A3' and the first opening A1' do not overlap in the Z direction, so that the photosensor 100 can receive a more oblique light beam B'.

[0069] It should be understood that for the electronic devices of any embodiment of the present disclosure, the relative setting relationship between the light-transmitting openings of the metal layer and / or the light-blocking layer and the photosensor can be adjusted according to design requirements (such as the light-receiving angle), and will not be repeated hereinafter.

[0070] Please refer to Figure 9 , the main differences between the electronic device 1G and Figure 4 the electronic device 1C are described as follows. The electronic device 1G further includes an opaque layer 12, a light-transmitting layer 14 is filled into the first opening A1 and the second opening A2, and a metal mesh layer 15 is disposed on the opaque layer 12, wherein the second opening A2' of the metal mesh layer 15 exposes the second opening A2 of the opaque layer 12. In addition, the first opening A1 of the opaque layer 12 exposes the first opening A1' of the pad P2, and the third opening A3' of the metal mesh layer 15 exposes the first opening A1 of the opaque layer 12. In some embodiments, the bottom width WA1' of the first opening A1' can be made smaller than the bottom width WA1 of the first opening A1, and the bottom width WA1 of the first opening A1 can be made smaller than the bottom width WA3' of the third opening A3' to improve the effect of filtering stray light, but not limited thereto.

[0071] It should be understood that for the electronic devices of any embodiment of the present disclosure, the opening design of the multi-layer metal layers (such as the conductive layer 109B and the metal mesh layer 15) disposed above the photosensor 100 can be used in combination with the opaque layer 12 to filter stray light, and will not be repeated hereinafter.

[0072] Please refer to Figure 10 , the main differences between the electronic device 1H and Figure 9 the electronic device 1G are described as follows. In the electronic device 1H, the conductive layer 107B is used to replaceFigure 9 The conductive layer 107. In addition, the first opening A1 includes a plurality of sub-openings A1S, and the light-transmitting layer 14 also fills the plurality of sub-openings A1S.

[0073] By using the opening design of the multi-layer metal layers (such as the conductive layer 107B, the conductive layer 109B, and the metal mesh layer 15) disposed above the photosensor 100, the opening design of the opaque layer 12, and the design of the plurality of sub-openings A1S, the effect of filtering stray light can be improved.

[0074] In other embodiments, although not shown, the design of the plurality of sub-openings A1S or the pattern 107P can be omitted. In addition, it should be understood that the electronic device of any embodiment of the present disclosure can use the opening design of the multi-layer metal layers (such as the conductive layer 107B, the conductive layer 109B, and the metal mesh layer 15) disposed above the photosensor 100 in combination with the plurality of sub-openings A1S of the opaque layer 12 to filter stray light, and thus will not be repeated hereinafter.

[0075] Please refer to Figure 11 , the main differences between the electronic device 1I and Figure 1 the electronic device 1 are described as follows. In the electronic device 1I, the conductive layer 109I of the circuit board 10I is not covered by the opaque layer 12. The conductive layer 109I may include pads P1, pads P2, the pattern P109, and other circuits (not shown), but is not limited thereto. The pads P1 and the pads P2 are disposed in the second opening A2 of the opaque layer 12 and are disposed on the bottom and the sidewalls of the second opening A2. The pattern P109 is disposed in the first opening A1 of the opaque layer 12 and is disposed on the sidewall of the first opening A1, and the pattern P109 exposes the bottom of the first opening A1.

[0076] The metal pads (such as the pads P1 and the pads P2) disposed on the sidewalls of the second opening A2 can not only be used as a retaining wall, but also improve the light utilization rate, so that the light intensity of the light beam incident on the object to be measured is increased. In addition, the metal pattern (such as the pattern P109) disposed on the sidewall of the first opening A1 can improve the light receiving effect, so that the light intensity of the light beam incident on the photosensor 100 is increased.

[0077] It should be understood that the electronic device of any embodiment of the present disclosure can be changed as described above, and thus will not be repeated hereinafter.

[0078] Please refer to Figure 12 , the main differences between the electronic device 1J and Figure 11 the electronic device 1I are described as follows. In the electronic device 1J, the opaque layer 12J does not include Figure 11The second opening A2, and the inorganic light-emitting unit 11 and the conductive layer 109J of the circuit board 10J are located in the first opening A1 of the opaque layer 12J. The conductive layer 109J may include pads P1, pads P2, and other circuits (not shown), but is not limited thereto. The pads P1 and the pads P2 are disposed on the bottom and sidewalls of the first opening A1, and the first opening A1' of the pad P1 is disposed corresponding to the photosensor 100. For example, the first opening A1' overlaps with the photosensor 100 in the Z direction.

[0079] The metal pads (such as pads P1 and pads P2) disposed on the sidewalls of the first opening A1 can not only be used as a retaining wall, but also improve the light utilization rate or the light collection effect.

[0080] It should be understood that the electronic devices of any embodiment of the present disclosure can be changed as described above, and will not be repeated hereinafter.

[0081] Please refer to Figure 13 and Figure 14 , the main differences between the electronic device 1K and the Figure 12 electronic device 1J are described as follows. In the circuit board 10K of the electronic device 1K, the conductive layer 109K may include pads P1, pads P2, pattern P109, and other circuits (not shown), but is not limited thereto. The pads P1, the pads P2, and the pattern P109 are disposed at the bottom of the first opening A1, and the pads P1 and the pattern P109 are further disposed on the sidewalls of the first opening A1. The right half of the pad P2 and the pattern P109 can be used as repair pads. When the inorganic light-emitting unit 11 fails to operate, another inorganic light-emitting unit 11' can be joined to the right half of the pad P2 and the pattern P109.

[0082] It should be understood that the electronic devices of any embodiment of the present disclosure can be changed as described above, and will not be repeated hereinafter.

[0083] Please refer to Figure 15 and Figure 16 , the main differences between the electronic device 1L and the Figure 13 electronic device 1K are described as follows. In the circuit board 10L of the electronic device 1L, the pad P2 does not include Figure 14 the first opening A1', and the gap G between the pad P2 and the pattern P109 corresponds to the photosensor 100. For example, the gap G overlaps with the photosensor 100 in the Z direction. The pad P2 and the pattern P109 can be used as repair pads. When the inorganic light-emitting unit 11 fails to operate, another inorganic light-emitting unit 11' can be joined to the pad P2 and the pattern P109. That is, when the inorganic light-emitting unit 11 is normal, a part of the light beam can be transmitted to the photosensor 100 through the gap G.

[0084] It should be understood that the electronic devices of any embodiment of the present disclosure can be changed as described above, and will not be repeated hereinafter.

[0085] Please refer to Figure 17 , the main differences between the electronic device 1M and Figure 3 the electronic device 1B are described as follows. The electronic device 1M further includes a lens 16A. In this article, a lens refers to an optical element that can change the traveling direction of a light beam, such as a convex lens or a concave lens, etc.

[0086] The lens 16A is disposed on the photosensor 100 and overlaps with the first opening A1' to guide the light beam reflected from the object to be measured to the photosensor 100. In this way, the light receiving effect can be improved, and the light intensity of the light beam incident on the photosensor 100 can be increased. For example, the lens 16A can be a focusing lens, such as a plano-convex lens, but not limited thereto.

[0087] In some embodiments, the electronic device 1M may further include a lens 16B. The lens 16B is disposed on the inorganic light emitting unit 11. The lens 16B can be a focusing lens, such as a plano-convex lens, but not limited thereto. According to different requirements, the lens 16B can also be a plano-concave lens, but not limited thereto. The lens 16B can have the same or different dimensions from the lens 16A, and will not be further limited herein.

[0088] It should be understood that the electronic devices of any embodiment of the present disclosure can be further provided with the lens 16A and / or the lens 16B, and will not be repeated hereinafter.

[0089] Please refer to Figure 18 , the main differences between the electronic device 1N and Figure 3 the electronic device 1B are described as follows. In the electronic device 1N, the photosensor 100 is disposed under the substrate 102A of the circuit board substrate 10A. For example, the electronic device 1N may further include a circuit board 10N, and the photosensor 100 and the elements or circuits electrically connected thereto are, for example, in the circuit board substrate 10N.

[0090] Specifically, the circuit board 10N may include a substrate 102N, a buffer layer 111N, a buffer layer 112N, a semiconductor layer 113N, a dielectric layer 114N, a conductive layer 115N, a dielectric layer 116N, a dielectric layer 117N, a conductive layer 118N, a dielectric layer 119N, a dielectric layer 121N, and a conductive layer 109N, but not limited thereto. According to different requirements, the circuit board 10N can add or reduce one or more elements or film layers.

[0091] The materials of the substrate 102N, the buffer layer 111N, the buffer layer 112N, the semiconductor layer 113N, the dielectric layer 114N, the conductive layer 115N, the dielectric layer 116N, the dielectric layer 117N, the conductive layer 118N, the dielectric layer 119N, the dielectric layer 121N, and the conductive layer 109N may refer to the materials of the substrate 102A, the buffer layer 111, the buffer layer 112, the semiconductor layer 113, the dielectric layer 114, the conductive layer 115, the dielectric layer 116, the dielectric layer 117, the conductive layer 118, the dielectric layer 119, the dielectric layer 121, and the conductive layer 109A, and will not be repeated hereinafter.

[0092] The buffer layer 111N and the buffer layer 112N are sequentially disposed on the substrate 102N. The semiconductor layer 113N is disposed on the buffer layer 112N. The semiconductor layer 113N is, for example, a patterned semiconductor layer and may include a plurality of semiconductor patterns 113PN (only one is schematically shown). The semiconductor pattern 113PN may include a channel region CH, a source region SR, and a drain region DR, where the channel region CH is located between the source region SR and the drain region DR. The dielectric layer 114N is disposed on the buffer layer 112N and covers the semiconductor layer 113N. The conductive layer 115N is disposed on the dielectric layer 114N. The conductive layer 115N may be a patterned conductive layer, and the conductive layer 115N may include a gate GE and other lines (not shown), but is not limited thereto. The gate GE is disposed above the channel region CH, and the gate GE overlaps the channel region CH in the Z direction. The dielectric layer 116N and the dielectric layer 117N are sequentially disposed on the buffer layer 112N and cover the conductive layer 115N. The conductive layer 118N is disposed on the dielectric layer 117N. The conductive layer 118N may be a patterned conductive layer, and the conductive layer 118N may include a source SE, a drain DE, and other lines (not shown), but is not limited thereto. The source SE may be electrically connected to the corresponding source region SR through a via TH4N penetrating the dielectric layer 117N, the dielectric layer 116N, and the dielectric layer 114N. The drain DE may be electrically connected to the corresponding drain region DR through the corresponding via TH4N. The dielectric layer 119N is disposed on the dielectric layer 117N and covers the conductive layer 118N. The photosensor 100 is disposed in a via TH5N penetrating the dielectric layer 119N and is electrically connected to the drain DE. The dielectric layer 121N is disposed on the dielectric layer 119N and covers the photosensor 100. The conductive layer 109N is disposed on the dielectric layer 121N. The conductive layer 109N may be a patterned conductive layer, and the conductive layer 109N may include an electrode UP and other lines (not shown), but is not limited thereto. The electrode UP may be electrically connected to the photosensor 100 through the corresponding via TH6N.

[0093] The electronic device 1N may further include a bonding layer AD, and the dielectric layer 121N and the substrate 102A may be bonded together through the bonding layer AD. The material of the bonding layer AD may include an Optical Clear Adhesive (OCA) or an Optical Clear Resin (OCR), but is not limited thereto.

[0094] In some embodiments, the conductive layer 115 and the conductive layer 115N may be provided with alignment marks for easy alignment. For example, the conductive layer 115 may further include an alignment mark AM1, and the conductive layer 115N may further include an alignment mark AM2, where the alignment mark AM1 and the alignment mark AM2 are complementary patterns. For example, the top view shape of the alignment mark AM1 may be a cross shape, and the alignment mark AM2 may have a groove AMA with a top view shape of a cross shape.

[0095] In summary, in the embodiments of the present disclosure, by integrating the photosensor in the circuit substrate and forming a first opening for light to pass through in the opaque layer, it is not necessary to additionally fabricate an optical structure corresponding to the photosensor, and thus the manufacturing process can be relatively simplified.

[0096] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present disclosure.

[0097] Although the embodiments of the present disclosure and their advantages have been disclosed as above, it should be understood that any person skilled in the art, without departing from the spirit and scope of the present disclosure, may make changes, substitutions and refinements, and the features between the embodiments may be arbitrarily mixed and replaced to form other new embodiments. In addition, the protection scope of the present disclosure is not limited to the processes, machines, manufactures, compositions of matter, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art may understand the processes, machines, manufactures, compositions of matter, devices, methods and steps developed currently or in the future from the disclosure of the present disclosure, as long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to the present disclosure. Therefore, the protection scope of the present disclosure includes the above processes, machines, manufactures, compositions of matter, devices, methods and steps. In addition, each claim constitutes an individual embodiment, and the protection scope of the present disclosure also includes the combination of each claim and embodiment. The protection scope of the present disclosure shall be defined by the appended claims.

Claims

1. An electronic device, characterized in that, Comprising: A circuit board including an optical sensor; An inorganic light-emitting unit disposed on the circuit board and configured to emit a light beam; And An opaque layer disposed on the circuit board and including a first opening, a part of the light beam being transmitted through the first opening to the optical sensor, and the opaque layer having a light transmittance of less than 50% for the light beam.

2. The electronic device according to claim 1, characterized in that, The opaque layer further includes a second opening, and the inorganic light-emitting unit is disposed in the second opening.

3. The electronic device according to claim 1, characterized in that, The opaque layer includes a metal pad, and the inorganic light-emitting unit is bonded to the metal pad.

4. The electronic device according to claim 1, characterized in that, The first opening includes a plurality of sub-openings.

5. The electronic device according to claim 1, characterized in that, Further comprising: A metal mesh layer disposed on the inorganic light-emitting unit, wherein the metal mesh layer includes a third opening that overlaps with the first opening.

6. The electronic device according to claim 1, characterized in that, Further comprising: A lens disposed on the optical sensor and overlapping with the first opening.

7. The electronic device according to claim 1, characterized in that, The circuit board further includes a substrate, and the optical sensor is disposed on the substrate.

8. The electronic device according to claim 1, characterized in that, The circuit board further includes a substrate, and the optical sensor is disposed under the substrate.

9. The electronic device according to claim 1, characterized in that, The circuit board further includes a semiconductor substrate, and the optical sensor is embedded in the semiconductor substrate.

10. The electronic device according to claim 1, characterized in that, The inorganic light-emitting unit is a light-emitting diode chip.

11. The electronic device according to claim 1, characterized in that, The optical sensor is configured to sense fingerprints.

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