A method for preparing a germanium nanowire
Germanium nanowires were prepared in one step on ITO substrates by a constant potential electrodeposition method, which solved the problems of metal catalysts and high temperature and low pressure required in the existing technology. This method enabled the simple and low-cost preparation of germanium nanowires and yielded porous germanium nanowires.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JILIN NORMAL UNIV
- Filing Date
- 2023-06-12
- Publication Date
- 2026-05-29
AI Technical Summary
Existing methods for preparing germanium nanowires require metal catalysts and high temperature and low pressure, resulting in complex and environmentally unfriendly processes. They also often require templates or light sources, making it difficult to achieve low-cost and simple preparation.
A constant potential electrodeposition method was adopted, using the non-toxic ionic liquid 1-ethyl-3-methylimidazolium trifluoromethanesulfonic acid ([EMIm]TfO) as a solvent and GeCl4 as an electrolyte to prepare germanium nanowires on ITO substrates in one step, avoiding metal catalysts and high temperature and low pressure. Liquid seeds were formed on the substrate through GeClx/TfO-complex, realizing template-free and light source-free growth.
A simple and low-cost preparation of germanium nanowires without templates or metal catalysts was achieved, avoiding the requirements of high temperature and low pressure, simplifying the preparation steps, and obtaining porous germanium nanowires.
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Figure CN116516421B_ABST