A metallized ceramic package substrate and a method of manufacturing the same

Abstract

The present application relates to component packaging technical field, particularly to a kind of metallized ceramic packaging substrate and its manufacturing method, comprising the following steps: S10: by metallized ceramic substrate process, metallized layer is combined in the upper and lower sides of ceramic substrate, the metallized layer of upper and lower sides is interconnected or not interconnected;S20: by pattern processing process, circuit pattern is processed on the ceramic substrate after metallization;S30: by metal processing process, the metal plate of required thickness is processed into the step of required shape;S40: by positioning assembly, step is positioned and installed on metallized ceramic substrate;S50: the step is sintered or welded on metallized ceramic substrate. Advantageous effect: shorten production time, reduce the production cost of product;Positioning assembly can be accurately positioned, improve yield;By selecting appropriate pattern making process, the pattern with line width and line spacing less than 100um is realized, there is no pollutant emission, green and environmental protection.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of component packaging, in particular to a metallized ceramic packaging substrate and a manufacturing method thereof. BACKGROUND

[0002] At present, the substrate for high-power LED mainly adopts DPC technology, that is, copper is sputtered on the ceramic substrate first, then the pattern is processed, and finally the step is thickened to the specified thickness through electroplating or chemical plating. However, with the development of LED, the emergence of new technologies such as miniLED and MicroLED puts forward more stringent requirements for the substrate. In general, the line width and line spacing are required to be less than 100 um, and this scale poses new challenges to the production of DPC process. The main aspects are as follows:

[0003] (1) There is a risk of hermetic packaging reliability.

[0004] (2) The electroplating time is long and the cost is high.

[0005] (3) The DPC process has a greater impact on the environment.

[0006] In addition to the above projects, consideration needs to be given to packaging, and a metal step higher than the thickness of the circuit pattern needs to be made around the circuit pattern. According to the current technology, it is necessary to force electroplating to a thickness of about 800 um, which takes a long time, resulting in high cost of the DPC product of the prior art.

[0007] The prior art also has corresponding technologies to provide narrow-pitch lines, such as Chinese Patent Application No. 201710711171.9, published on December 12, 2017, which discloses a high-reliability new laser etching process, including the following steps: S1: preparing an FPC circuit board, a PCB circuit board, or a ceramic integrated circuit board to be processed; S2: preparing a laser for etching processing; S3: shaping the laser emitted by the laser to form a flat-top light and a Gaussian light; S4: using the laser to etch the FPC circuit board, the PCB circuit board, or the ceramic integrated circuit board to remove the protective film, the Soldermask ink layer, and the solder resist layer on the corresponding circuit board, exposing the metal Pad; and the metal Pad and the metal Pad form a solder resist dam; in the actual operation process, the solder pad can be miniaturized to less than 0.1 mm, which is very beneficial to subsequent line densification processing, and the flatness of the PI surface is + / - 5 microns, which can significantly improve the solderability and the tensile value of the element, reduce the use of Underfill, and prevent the overflow caused by the pressing of traditional FPC production, resulting in a smaller soldering area and poorer reliability. It effectively prevents short circuiting between fine-pitch intervals. However, it does not consider the positioning difference and high cost of ceramic boards in the integrated circuit field during the process, and cannot produce step parts. SUMMARY

[0008] To overcome the technical defects of the prior art, the present application provides a metallized ceramic packaging substrate with short production time and low production cost.

[0009] In one aspect, the present application provides a metallized ceramic packaging substrate, which includes a metallized ceramic substrate, the metallized ceramic substrate including a ceramic substrate and a metallized layer disposed on both upper and lower sides of the ceramic substrate, the metallized layer having a circuit pattern processed thereon, and a step sintered or welded on the metallized ceramic substrate.

[0010] In one aspect, the present application provides an efficient manufacturing method for a metallized ceramic packaging substrate, including the following steps:

[0011] S10: combining a metallized layer on both upper and lower sides of a ceramic substrate through a metallized ceramic substrate process, the metallized layers on the upper and lower sides being interconnected or not interconnected;

[0012] S20: processing a circuit pattern on the ceramic substrate after metallization through a pattern processing process to obtain a metallized ceramic substrate;

[0013] S30: processing a metal plate of a desired thickness into a step of a desired shape through a metal processing process;

[0014] S40: positioning and installing the step on the metallized ceramic substrate through a positioning assembly;

[0015] S50: sintering or welding the step on the metallized ceramic substrate prepared in S20.

[0016] Further, the metallized ceramic substrate process in S10 includes a direct copper clad ceramic substrate process, a direct copper clad ceramic substrate process, a direct aluminum clad ceramic substrate process, an active metal brazing process, a thick film printing process or a thin film metallized ceramic substrate process.

[0017] Further, the thickness of the metallized layer ranges from 10um to 400um.

[0018] Further, the positioning assembly includes a first positioning structure arranged on the circuit pattern, and the step is provided with a second positioning structure, and the shapes of the first and second positioning structures are matched with each other.

[0019] Further, the metal processing process in S30 includes laser processing, mechanical processing or chemical etching.

[0020] Further, the sintering or welding of the step on the metallized ceramic substrate in S50 includes a direct copper clad ceramic substrate process, a direct aluminum clad ceramic substrate process, a metal brazing process or an active metal brazing process.

[0021] In summary, the beneficial effects of the present application are: the production time can be greatly shortened by using the present application, thereby reducing the production cost of the product, and the cost is reduced to about 40% of the existing product; the step and the metallized ceramic substrate with pattern can be accurately positioned by using the pattern positioning assembly, thereby improving the yield; the purpose of meeting the high-power LED, embedded chip, power electronic reliability and airtight packaging is achieved, the pattern with a line width and line spacing less than 100um is realized by selecting a suitable pattern making process, and there is no emission of pollutants in the manufacturing process, which is green and environmentally friendly. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 It is a structure schematic diagram of embodiment 1 of the present application.

[0023] Figure 2 It is a structure schematic diagram of embodiment 2 of the present application.

[0024] Figure 3 It is a structure schematic diagram of embodiment 3 of the present application.

[0025] Figure 4 It is a structure schematic diagram of the positioning assembly of embodiment 4 of the present application.

[0026] Explanation of reference signs:

[0027] 1. Metallization layer; 11. Circuit pattern; 2. Ceramic substrate; 3. Step; 4. Positioning strip; 5. Positioning groove; 6. Positioning blind hole; 7. Circular bump. Detailed Implementation

[0028] The present invention will be further described below with reference to the accompanying drawings:

[0029] like Figures 1-4 As shown, this embodiment provides a metallized ceramic substrate with a step 3, including a metallized ceramic substrate, the metallized ceramic substrate including a ceramic substrate 2 and a metallization layer 1 disposed on the upper and lower sides of the ceramic substrate 2, the metallization layer 1 having a circuit pattern 11 processed on the metallization layer 1, and the step 3 being sintered or welded on the metallized ceramic substrate.

[0030] Another aspect of the present invention provides a highly efficient method for fabricating a metallized ceramic packaging substrate, comprising the following steps:

[0031] S10: The metallization layer 1 is bonded to appropriate positions on the upper and lower sides of the ceramic substrate 2 using a metallization ceramic substrate process. Depending on the application, the metallization layers 1 on the upper and lower sides can be interconnected or not interconnected. Interconnection technology is a publicly available technology. Having only one side with a metallization layer 1 will cause severe substrate warping, and one side with a metallization layer 1 cannot achieve vertical interconnection. Therefore, this solution uses a structure with metallization layers 1 on both the upper and lower layers. Metallization ceramic substrate processes include, but are not limited to, direct copper plating (DPC), direct copper-clad ceramic substrate (DBC), direct aluminum-clad ceramic substrate (DBA), active metal soldering (AMB), soldering, thick film printing, and thin film metallization ceramic substrate processes (i.e., vapor deposition, sputtering, etc.).

[0032] S20: The designed circuit pattern 11 is fabricated on the metallized ceramic substrate 2 using appropriate pattern processing technology. The designed circuit pattern 11 includes designed positioning patterns or structures to facilitate connection and positioning with subsequent processes.

[0033] S30: A metal plate of specified thickness (such as copper or aluminum) is processed into a step 3 of a specified shape using metal processing techniques. The shape of the step 3 can be circular or square, two or more layers, closed or open, or other shapes, which can be selected according to customer needs. Metal processing techniques include, but are not limited to, laser processing, machining, and chemical etching.

[0034] S40: positioning and installing the step 3 on the metallized ceramic substrate 2 by a positioning assembly, the positioning assembly comprising a first positioning structure arranged on the circuit pattern 11, the step 3 being provided with a second positioning structure, the first positioning structure and the second positioning structure being matched in shape, thereby accurately installing the step 3 on the ceramic substrate 2; in some embodiments, the step 3 can be integrally formed as the second positioning structure, and the step 3 is matched with the first positioning structure on the circuit pattern 11.

[0035] S50: welding or sintering the metal step 3 on the S2 metallized ceramic substrate 2, the metallized ceramic substrate process herein including but not limited to a direct copper clad ceramic substrate process (DBC), a direct aluminum clad ceramic substrate process (DBA), and an active metal brazing process (AMB); according to the requirements of line width and line spacing, the thickness of the metallized layer 1 ranges from 10 um, 100 um or 400 um.

[0036] The scheme can improve the yield and reduce the product cost, and can realize product hermetic packaging, by accurately positioning the step 3 and the metallized ceramic substrate 2 with a pattern. Embodiment 1

[0037] As shown in the figure, the embodiment provides an efficient manufacturing method of a metallized ceramic packaging substrate, comprising the following steps: Figure 1

[0038] S10: through a DBC process, a 100 um thick copper foil is attached to an alumina ceramic substrate 2, the copper foil serving as a metallized layer 1, and the upper and lower copper foils are interconnected at the electrode position.

[0039] S20: through a film pasting, exposure, development, etching and film removing process, a designed circuit pattern 11 is processed, the first positioning structure arranged on the circuit pattern 11 being a positioning strip 4.

[0040] S30: through a mechanical processing method, a 600 um thick copper plate is processed to have a designed step 3, the second positioning structure arranged on the step 3 being a positioning groove 5.

[0041] S40: the metal copper step 3 is pre-oxidized on the back surface of the step 3 through a pre-oxidation method.

[0042] S50: the pre-oxidized metal copper step 3 is placed on the ceramic substrate 2, so that the positioning strip 4 on the ceramic substrate 2 and the positioning groove 5 on the step 3 are matched with each other.

[0043] S60: the assembly is placed in a sintering furnace to be attached at a temperature of 1065℃, 1750℃ or 1083℃ for 5 min, thereby manufacturing the metallized ceramic substrate 2 with the step 3.

[0044] ​The scheme of Example 1 is economical and low in cost. Example 2

[0045] As Figure 2 shown, the embodiment provides a high-efficiency manufacturing method of a metallized ceramic packaging substrate, comprising the following steps:

[0046] S10: a 300-um-thick copper sheet is welded on a silicon nitride ceramic substrate 2 by an AMB process, the copper sheet serving as a metallized layer 1, and the upper and lower copper sheets are interconnected at the electrode position.

[0047] S20: a designed circuit pattern 11 is processed out by a film pasting, exposure, development, etching, and film removing process, and a first positioning structure provided on the circuit pattern 11 is a positioning groove 5.

[0048] S30: an 800-um-thick copper plate is processed to have a designed step 3 by a laser processing method, the step 3 serving as a second positioning structure, and the step 3 cooperates with the positioning groove 5 on the circuit pattern 11.

[0049] S40: solder is printed on the back of the step 3 by a screen printing method, the solder being Sn-Ag-Cu, and organic matter is removed for use.

[0050] S50: the metal copper step 3 to be used is placed on the ceramic substrate 2, so that the step 3 is clamped in the positioning groove 5 on the ceramic substrate 2.

[0051] S60: the assembly is placed in a sintering furnace to be kept at about 260°C for 10 min to realize welding. A metallized ceramic substrate 2 with the step 3 is manufactured.

[0052] According to the scheme of Example 2, the ceramic substrate has good performance, and the cost is higher than that of the scheme of Example 1. Example 3

[0053] As Figure 3 shown, the embodiment provides a high-efficiency manufacturing method of a metallized ceramic packaging substrate, comprising the following steps,

[0054] S10: copper paste patterns are printed on an aluminum nitride ceramic substrate 2 by a screen printing method to form a metallized layer 1, the upper and lower layers are interconnected at the electrode position, and organic volatile matter is removed.

[0055] S20: a copper film is sintered on the surface of the AlN ceramic by a process of keeping at 850°C for 30 min to realize ceramic metallization and upper and lower interconnection at the electrode position. A positioning strip 4 is provided on the metallized circuit pattern 11.

[0056] S30: A copper plate with a thickness of 500 um is etched into a prescribed shape of a step 3 by a chemical etching method, and a second positioning structure provided on the step 3 is a positioning groove 5.

[0057] S40: An Ag-Cu-Ti paste is printed on the back of the metal copper step 3 by a silk screen printing method, and organic volatile substances are removed.

[0058] S50: The metal copper step 3 is placed on the ceramic substrate 2, and the positioning groove 5 on the step 3 is matched with the positioning strip 4 on the ceramic substrate 2.

[0059] S60: The assembly is placed in a vacuum brazing furnace to realize welding at 780 DEG C for 20 min. A metallized ceramic substrate 2 with the step 3 is completed.

[0060] The process of Example 3 is simple, and the requirements for equipment and process level are slightly lower, and it is more suitable for promotion. Example 4

[0061] The embodiment provides a high-efficiency manufacturing method of a metallized ceramic packaging substrate, and comprises the following steps:

[0062] S10: The surface of an aluminum nitride ceramic substrate 2 is metallized by a direct copper plating process (DPC process) to form a metallized layer 1, and the thickness of the copper metallized layer 1 is 70 um.

[0063] S20: A designed circuit pattern 11 is processed by an electroplating process. A first positioning structure provided on the circuit pattern 11 is a positioning bump.

[0064] S30: A copper plate with a thickness of 500 um is etched into a prescribed shape of a step 3 by a mechanical processing method, and a second positioning structure provided on the step 3 is a positioning blind hole 6.

[0065] S40: An Ag-Cu-Ti paste is printed on the back of the metal copper step 3, and organic volatile substances are removed.

[0066] S50: The metal copper step 3 is placed on the ceramic substrate 2, and the circular bump 7 is matched with the positioning blind hole 6.

[0067] S60: The assembly is placed in a vacuum brazing furnace to realize welding at 780 DEG C for 20 min. A metallized ceramic substrate 2 with the step 3 is completed.

[0068] The above description of the application and its embodiments is illustrative and not restrictive, and the application can be practiced in other specific forms without departing from the spirit or essential character thereof. The drawings described herein are only one of the many embodiments of the application and are not limiting, and any reference signs in the claims should not be construed as limiting the claims to the figure in which the reference signs are used. Therefore, if a person skilled in the art is inspired by the disclosure, and without departing from the spirit of the application, he can design similar structural forms and embodiments without creativity, which should also be within the scope of protection of the patent. In addition, the word "comprising" does not exclude other elements or steps, and the word "one" before an element does not exclude the inclusion of "multiple" such elements. The multiple elements stated in the product claims can also be implemented by one element through software or hardware. The words "first", "second" and the like are used to indicate names, and not to indicate any particular order.

Claims

1. A method for fabricating a metallized ceramic packaging substrate, characterized in that, Includes the following steps: S10: The metallization layer is bonded to the upper and lower sides of the ceramic substrate through the metallization ceramic substrate process, and the metallization layers on the upper and lower sides may be interconnected or not interconnected. S20: A circuit pattern is fabricated on the metallized ceramic substrate using a patterning process to obtain a metallized ceramic substrate. S30: Metal plates of the required thickness are processed into steps of the required shape using metal processing techniques; S40: The step is positioned and installed on the metallized ceramic substrate by a positioning component. The positioning component includes a first positioning structure disposed on the circuit pattern. The step is provided with a second positioning structure or the step as a whole is a second positioning structure. The shapes of the first positioning structure and the second positioning structure are mutually matched. S50: The steps are sintered or welded onto a metallized ceramic substrate.

2. The method for manufacturing a metallized ceramic packaging substrate according to claim 1, characterized in that, The metallization ceramic substrate process described in step S10 is a direct copper plating ceramic substrate process, a direct copper-clad ceramic substrate process, a direct aluminum-clad ceramic substrate process, an active metal brazing process, a thick film printing process, or a thin film metallization ceramic substrate process.

3. The method for manufacturing a metallized ceramic packaging substrate according to claim 1, characterized in that, The thickness of the metallization layer ranges from 10 μm to 400 μm.

4. The method for manufacturing a metallized ceramic packaging substrate according to claim 1, characterized in that, The metal processing technology described in step S30 is laser processing, mechanical processing, or chemical etching.

5. The method for manufacturing a metallized ceramic packaging substrate according to claim 1, characterized in that, The process of sintering or welding the step onto the metallized ceramic substrate in step S50 can be a direct copper-clad ceramic substrate process, a direct aluminum-clad ceramic substrate process, a metal brazing process, or an active metal brazing process.

6. A metallized ceramic packaging substrate, characterized in that, It is prepared by the method of manufacturing a metallized ceramic packaging substrate as described in any one of claims 1 to 5.

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