A method for repairing process cracks in a semiconductor target

Abstract

The application relates to a semiconductor target process crack repairing method, which comprises the following steps: machining the crack of a workpiece to obtain a process groove; then embedding a welding wire into the process groove; then adopting laser to weld the joint of the welding wire and the process groove, so that the welding wire at the joint is melted; then adopting laser to bombard the top of the welding wire, so that the molten solder enters the process groove; and finally polishing the upper surface of the process groove to obtain a repaired workpiece. The repairing method provided by the application is suitable for the rapid repairing of the non-cavity area of a semiconductor sputtering target, can achieve better metal luster, improves the welding efficiency, and reduces the welding cost.

Description

Technical Field

[0001] This invention relates to the field of semiconductor target manufacturing technology, and specifically to a method for repairing process cracks in semiconductor targets. Background Technology

[0002] Sputtering targets are a crucial material essential for manufacturing semiconductor chips. In semiconductor target production, laser welding has been used to seal critical areas, employing a high-strength stacking process. However, this high-strength stacking process is time-consuming, prone to discoloration of active metals, and demands sophisticated welding techniques.

[0003] CN113751876A discloses a method for treating the weld seam after welding a target assembly and a copper target assembly. The method involves sequentially forming a molten seam, filling the molten seam, stacking it up to a height above the edge plane, and flattening the weld seam of the copper target assembly in contact with the atmosphere to form a completely sealed channel, thus avoiding contamination of semiconductor products during subsequent sputtering processes.

[0004] However, for non-critical components in semiconductor sputtering targets, such as the area outside the sputtering cavity, which has a large area, using the existing high-strength stacking process not only greatly increases energy consumption and time consumption, but also fails to maintain the metallic color, making it difficult to meet the needs of semiconductor sputtering targets.

[0005] Therefore, it is of great significance to provide a method for rapid repair of non-cavity areas while maintaining metallic luster. Summary of the Invention

[0006] To address the above problems, the present invention aims to provide a method for repairing process cracks in semiconductor sputtering targets. Compared with the prior art, the repair method provided by the present invention is suitable for the rapid repair of non-cavity areas of semiconductor sputtering targets, achieving better metallic luster, improving welding efficiency, and reducing welding costs.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] This invention provides a method for repairing process cracks in semiconductor target materials, the repair method comprising the following steps:

[0009] The cracks in the workpiece are machined to obtain process grooves;

[0010] Then, the welding wire is embedded in the process groove;

[0011] Next, a laser is used to weld the joint between the welding wire and the process tank, melting the welding wire at the joint. Then, the top of the welding wire is bombarded with a laser to allow the molten welding material to enter the process tank.

[0012] Finally, the upper surface of the process tank is polished to obtain the repaired workpiece.

[0013] In this invention, the method of embedding welding wire in a process groove allows the molten solder to be more concentrated at the crack. Then, through welding at the joint and bombardment of the top of the welding wire, the solder falls into the process groove, ultimately achieving good welding strength and repair effect. The repair method provided by this invention not only makes full use of the solder but also reduces the power of the laser used, avoids metal discoloration, and simultaneously reduces costs and improves welding efficiency.

[0014] Preferably, the welding wire and the process groove are interference-fitted, with the bottom of the welding wire embedded in the process groove and the top of the welding wire higher than the workpiece surface.

[0015] Preferably, the diameter of the welding wire is 105-130% of the width of the process groove, for example, it can be 105%, 110%, 115%, 120%, 125% or 130%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0016] Preferably, the width of the process tank is 0.2-0.8 mm, for example, it can be 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm or 0.8 mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0017] Preferably, the depth of the process groove is 50-70% of the diameter of the welding wire, for example, it can be 50%, 52%, 54%, 56%, 58%, 60%, 62%, 64%, 66%, 68% or 70%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0018] In this invention, it is preferable to control the depth of the process groove as a percentage of the welding wire diameter within a specific range, which can further promote the concentrated distribution of the molten solder at the crack.

[0019] Preferably, the laser power for welding is 50-75% of the total power, for example, it can be 50%, 52%, 55%, 58%, 60%, 62%, 65%, 68%, 70%, 72% or 75%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0020] In this invention, it is preferable to control the laser power of welding within a specific range, which can improve welding strength, reduce energy consumption, and prevent metal discoloration.

[0021] Preferably, the laser power of the bombardment is 30-50% of the total power, for example, it can be 30%, 32%, 35%, 38%, 40%, 42%, 45%, 48% or 50%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0022] In this invention, it is preferable to control the laser power of the bombardment within a specific range, which can promote the molten solder above the process tank to fall into the process tank, while reducing energy consumption and preventing metal discoloration.

[0023] Preferably, the upper surface of the solder filling in the polished process tank is flush with the workpiece surface.

[0024] Preferably, the welding wire comprises copper welding wire.

[0025] As a preferred embodiment of the present invention, the method includes the following steps:

[0026] The cracks in the workpiece are machined to obtain process grooves;

[0027] Then, the welding wire and the process groove are interference-fitted, with the bottom of the welding wire embedded in the process groove and the top of the welding wire higher than the workpiece surface. The diameter of the welding wire is 105-130% of the width of the process groove, the width of the process groove is 0.2-0.8 mm, and the depth of the process groove is 50-70% of the diameter of the welding wire. The welding wire includes copper welding wire.

[0028] Next, a laser is used to weld the joint between the welding wire and the process tank. The laser power used for welding is 50-75% of the total power, which melts the welding wire at the joint. Then, the top of the welding wire is bombarded with a laser. The laser power used for bombardment is 30-50% of the total power, which causes the molten welding material to enter the process tank.

[0029] Finally, the upper surface of the process tank is polished, and after polishing, the upper surface of the process tank filled with solder is flush with the surface of the workpiece, thus obtaining the repaired workpiece.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] The repair method provided by this invention is suitable for the rapid repair of non-cavity areas of semiconductor sputtering targets, achieving better metallic luster, improving welding efficiency, and reducing welding costs. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the process tank in Embodiment 1 of the present invention;

[0033] Figure 2 This is a schematic diagram of the structure after the welding wire is embedded in the process groove in Embodiment 1 of the present invention;

[0034] Figure 3 This is a schematic diagram of the structure of the repaired workpiece in Embodiment 1 of the present invention;

[0035] Among them, 1-workpiece; 2-welding wire; 3-process groove; 4-crack. Detailed Implementation

[0036] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0037] Example 1

[0038] This embodiment provides a method for repairing process cracks in semiconductor target materials, the method comprising the following steps:

[0039] Crack 4 in workpiece 1 is machined to obtain process groove 3. The structure of process groove 3 is as follows. Figure 1 As shown;

[0040] Then, the welding wire 2 and the process groove 3 are interference-fitted, with the bottom of the welding wire 2 embedded in the process groove 3 and the top of the welding wire 2 higher than the surface of the workpiece 1, such as... Figure 2 As shown, the diameter of the welding wire 2 is 110% of the width of the process groove 3, the width of the process groove 3 is 0.6 mm, the depth of the process groove 3 is 60% of the diameter of the welding wire 2, and the welding wire 2 includes copper welding wire.

[0041] Next, a laser is used to weld the joint between the welding wire 2 and the process tank 3. The laser power used for welding is 60% of the total power, which melts the welding wire 2 at the joint. Then, the top of the welding wire 2 is bombarded with a laser. The laser power used for bombardment is 40% of the total power, which causes the molten welding material to enter the process tank 3.

[0042] Finally, the upper surface of the process tank 3 is polished, and after polishing, the upper surface of the process tank 3 filled with solder is flush with the surface of the workpiece 1, resulting in the repaired workpiece 1, with the structure as shown. Figure 3 As shown.

[0043] Example 2

[0044] This embodiment provides a method for repairing process cracks in semiconductor target materials, the method comprising the following steps:

[0045] The cracks in the workpiece are machined to obtain process grooves;

[0046] Then, the welding wire and the process groove are interference-fitted, with the bottom of the welding wire embedded in the process groove and the top of the welding wire higher than the workpiece surface. The diameter of the welding wire is 105% of the width of the process groove, the width of the process groove is 0.8 mm, and the depth of the process groove is 70% of the diameter of the welding wire. The welding wire includes copper welding wire.

[0047] Next, a laser is used to weld the joint between the welding wire and the process tank. The laser power used for welding is 50% of the total power, which melts the welding wire at the joint. Then, a laser is used to bombard the top of the welding wire. The laser power used for bombardment is 50% of the total power, which causes the molten welding material to enter the process tank.

[0048] Finally, the upper surface of the process tank is polished, and after polishing, the upper surface of the process tank filled with solder is flush with the surface of the workpiece, thus obtaining the repaired workpiece.

[0049] Example 3

[0050] This embodiment provides a method for repairing process cracks in semiconductor target materials, the method comprising the following steps:

[0051] The cracks in the workpiece are machined to obtain process grooves;

[0052] Then, the welding wire and the process groove are interference-fitted, with the bottom of the welding wire embedded in the process groove and the top of the welding wire higher than the workpiece surface. The diameter of the welding wire is 130% of the width of the process groove, the width of the process groove is 0.2 mm, and the depth of the process groove is 50% of the diameter of the welding wire. The welding wire includes copper welding wire.

[0053] Next, a laser is used to weld the joint between the welding wire and the process tank. The laser power used for welding is 75% of the total power, which melts the welding wire at the joint. Then, the top of the welding wire is bombarded with a laser with a laser power of 30% of the total power, which causes the molten welding material to enter the process tank.

[0054] Finally, the upper surface of the process tank is polished, and after polishing, the upper surface of the process tank filled with solder is flush with the surface of the workpiece, thus obtaining the repaired workpiece.

[0055] Example 4

[0056] This embodiment provides a method for repairing process cracks in semiconductor target materials. The only difference from Embodiment 1 is that the laser power used for welding is 35% of the total power.

[0057] Example 5

[0058] This embodiment provides a method for repairing process cracks in semiconductor target materials. The only difference from Embodiment 1 is that the laser power used for welding is 85% of the total power.

[0059] Example 6

[0060] This embodiment provides a method for repairing process cracks in semiconductor target materials. The only difference from Embodiment 1 is that the laser power used for bombardment is 25% of the total power.

[0061] Example 7

[0062] This embodiment provides a method for repairing process cracks in semiconductor target materials. The only difference from Embodiment 1 is that the laser power used for bombardment is 55% of the total power.

[0063] The discoloration and cracking of the workpieces obtained in Examples 1-7 were tested, and the results are shown in Table 1.

[0064] Table 1

[0065] Are there any cracks? Does the metal change color? Example 1 none It does not change color and has a metallic luster. Example 2 none It does not change color and has a metallic luster. Example 3 none It does not change color and has a metallic luster. Example 4 Cracks after repair It does not change color and has a metallic luster. Example 5 none Color change Example 6 The welding wire does not melt and cannot repair the crack. No color change Example 7 No cracks No color change

[0066] The following points can be observed from the data in Table 1:

[0067] (1) As can be seen from the data of Examples 1-3, under better conditions, the repair method provided by the present invention can repair cracks, reduce energy consumption, and make the repaired surface have a metallic luster.

[0068] (2) A comprehensive comparison of the data from Example 1 and Examples 4-5 shows that the only difference between Examples 4-5 and Example 1 is that the laser power used for welding is not within the preferred range of the present invention. In Example 4, cracks appeared after repair, while in Example 5, the metal discoloration occurred. Therefore, the present invention preferably controls the laser power used for welding within a specific range, which can further improve the repair effect and avoid metal discoloration.

[0069] (3) A comprehensive comparison of the data from Example 1 and Examples 6-7 shows that the only difference between Examples 6-7 and Example 1 is that the laser power of the bombardment is not within the preferred range of the present invention. In Example 6, the welding wire does not melt, which makes the repair impossible. In Example 5, although there is no discoloration, the energy consumption is high. Therefore, the present invention preferably controls the laser power of the bombardment within a specific range, which can further improve the repair effect and reduce energy consumption.

[0070] In summary, the repair method provided by this invention is suitable for the rapid repair of non-cavity areas of semiconductor sputtering targets, achieving better metallic luster, improving welding efficiency, and reducing welding costs.

[0071] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A method for repairing process cracks in semiconductor target materials, characterized in that, The repair method comprises the following steps: Machining the crack of the workpiece to obtain a process groove; Then, embedding the welding wire into the process groove; After that, welding the joint of the welding wire and the process groove by laser, melting the welding wire at the joint, and then bombarding the top of the welding wire by laser to make the molten solder enter the process groove; Finally, polishing the upper surface of the process groove to obtain the repaired workpiece; The laser power for welding is 50-75% of the total power; The laser power for bombardment is 30-50% of the total power.

2. The repair method of claim 1, wherein The welding wire and the process groove are in interference fit, the bottom of the welding wire is embedded into the process groove, and the top of the welding wire is higher than the surface of the workpiece.

3. The repair method of claim 1, wherein The diameter of the welding wire is 105-130% of the width of the process groove.

4. The repair method of claim 1, wherein The width of the process groove is 0.2-0.8 mm.

5. The repair method of claim 1, wherein The depth of the process groove accounts for 50-70% of the diameter of the welding wire.

6. The method of repairing according to claim 1, wherein, After polishing, the upper surface of the process groove filled with solder is flush with the surface of the workpiece.

7. The method of repairing according to claim 1, wherein, The welding wire comprises a copper welding wire.

8. The method of claim 1, wherein, The method comprises the following steps: Machining the crack of the workpiece to obtain a process groove; Then, embedding the welding wire and the process groove in interference fit, the bottom of the welding wire is embedded into the process groove, and the top of the welding wire is higher than the surface of the workpiece, the diameter of the welding wire is 105-130% of the width of the process groove, the width of the process groove is 0.2-0.8 mm, the depth of the process groove accounts for 50-70% of the diameter of the welding wire, and the welding wire comprises a copper welding wire; After that, welding the joint of the welding wire and the process groove by laser, the laser power for welding is 50-75% of the total power, melting the welding wire at the joint, and then bombarding the top of the welding wire by laser, the laser power for bombardment is 30-50% of the total power, making the molten solder enter the process groove; Finally, polishing the upper surface of the process groove, the upper surface of the process groove filled with solder after polishing is flush with the surface of the workpiece, to obtain the repaired workpiece.

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