Optical proximity correction method for improving hole-filling capability of electroplating

Abstract

The application provides an optical proximity correction method for improving the hole filling capability of electroplating, and provides a design layout, the design layout is composed of multiple types of patterns, the patterns include one-dimensional line patterns and two-dimensional patterns; different cut segment design rules are set according to the target critical dimension and the pattern complexity of the two-dimensional patterns; whether the target critical dimension and the pattern complexity of the two-dimensional patterns meet the target value is judged, if yes, the length of the first to Nth cut segments is reduced to the target length; the contour formation and the iterative cut segments of the two-dimensional patterns are formed by using different cut segment design rules, and a corrected layout is formed, so that the error value between the developed pattern of the corrected layout and the design layout is less than or equal to the target error; the accuracy of the corrected layout is checked, and if there is no error, the mask is manufactured by using the corrected layout. The optical proximity correction method provided by the application effectively helps the metal filling capability, and is universally applicable to various technology nodes, and the accuracy of the critical dimension is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to an optical proximity correction method for improving the hole-filling capability of electroplating. Background Technology

[0002] As advanced process technology nodes decrease, the requirements for 1D (one-dimensional line graphics) and 2D (two-dimensional line graphics) line-end structure critical dimension (Line-end CD) accuracy for metal layers are also increasing.

[0003] When the layout contains small-sized 2D graphics with complex environments, the traditional method is to perform routine segmentation on the design layout and then perform normal OPC correction. However, special segmentation is not performed on particularly small-sized line-end structures. Therefore, when the mask is exposed on the wafer in this way, the critical dimensions of the 2D line-end structures may not meet the accuracy requirements, resulting in the failure of copper filling at the ends of the metal lines.

[0004] To address the aforementioned issues, a novel optical proximity correction method is needed to improve the hole-filling capability of electroplating. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an optical proximity correction method to improve the electroplating filling capability. This method addresses the problem that in the prior art, conventional segmentation of the design layout followed by normal OPC correction does not involve special segmentation for particularly small-sized line end structures. As a result, when the mask is exposed onto the wafer, the critical dimensions of the 2D line end structures may not meet the accuracy requirements, leading to filling failure at the ends of the metal lines.

[0006] To achieve the above and other related objectives, the present invention provides an optical proximity correction method for improving the hole-filling capability of electroplating, comprising:

[0007] Step 1: Provide a design layout, which consists of various types of graphics, including one-dimensional line graphics and two-dimensional graphics;

[0008] Step 2: Set different cutting segment design rules according to the target key size and graphic complexity of the two-dimensional graphic: Determine whether the target key size and graphic complexity of the two-dimensional graphic meet the target value. If so, reduce the length of the cutting segment of the first to Nth segments to the target length.

[0009] Step 3: Using different cutting segment design rules, form and iteratively cut segments according to the outline of the two-dimensional graphic to form a corrected layout, so that the error value between the developed graphic of the corrected layout and the design layout is less than or equal to the target error.

[0010] Step 4: Verify the accuracy of the corrected layout. If there are no errors, fabricate a photomask using the corrected layout.

[0011] Preferably, the pattern in step one is used to define the formation area of ​​the metal layer on the substrate.

[0012] Preferably, the material of the metal layer in step one is copper.

[0013] Preferably, in step two, if it is determined whether the target key dimension of the two-dimensional graphic is less than or equal to 48 nanometers, and whether the two-dimensional graphic has at least 5 or more flush line end structures, then the length of the cutting segment of the first to Nth segments is reduced to the target length.

[0014] Preferably, in step two, the length of the first to third cut segments is reduced to the target length.

[0015] Preferably, the total length of the cut segments in the first to third segments in step two is 90 to 110 nanometers.

[0016] Preferably, in step two, the length of the cut ends of the first and second segments is reduced to the target length.

[0017] Preferably, the reduced cutting segment length in step two should not be too small, and the corrected layout formed in step three should meet the mask manufacturing accuracy.

[0018] Preferably, the two-dimensional graphic in step two does not affect the key dimensions of the one-dimensional line graphic.

[0019] As described above, the optical proximity correction method for improving the electroplating hole-filling capability of the present invention has the following beneficial effects:

[0020] The optical proximity correction method of the present invention effectively enhances the ability to fill metal and is universally applicable to various technology nodes, improving the accuracy of critical dimensions. Attached Figure Description

[0021] Figure 1 The diagram shown is a schematic representation of the process flow of this invention. Detailed Implementation

[0022] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0023] Please see Figure 1This invention provides an optical proximity correction method to improve the hole-filling capability of electroplating, comprising:

[0024] Step 1: Provide the design layout. The design layout consists of various types of graphics, including one-dimensional line graphics and two-dimensional graphics.

[0025] In an embodiment of the present invention, the pattern in step one is used to define the formation area of ​​the metal layer on the substrate.

[0026] In an embodiment of the present invention, the material of the metal layer in step one is copper. It should be noted that the material of the metal layer can also be other types, which are not specifically limited here.

[0027] Step 2: Set different cutting segment design rules based on the target key size and graphic complexity of the 2D graphic: Determine whether the target key size and graphic complexity of the 2D graphic meet the target value. If so, reduce the length of the cutting segments from the first to the Nth segment to the target length.

[0028] In an embodiment of the present invention, in step two, if it is determined whether the target critical size of the two-dimensional graphic is less than or equal to 48 nanometers, and whether the two-dimensional graphic has at least 5 or more parallel line-end structures, then the length of the first to Nth segments is reduced to the target length.

[0029] In an embodiment of the present invention, in step two, the length of the first to third cut segments is reduced to the target length.

[0030] In an embodiment of the present invention, the total length of the first to third cut segments in step two is 90 to 110 nanometers.

[0031] In an embodiment of the present invention, in step two, the length of the cut ends of the first and second segments is reduced to the target length.

[0032] In an embodiment of the present invention, the length of the reduced cutting segment in step two cannot be too small, that is, the corrected layout formed in step three needs to meet the mask manufacturing accuracy.

[0033] In an embodiment of the present invention, the two-dimensional graphic in step two does not affect the key dimensions of the one-dimensional line graphic.

[0034] Step 3: Using different segment design rules, form and iteratively cut segments according to the outline of the two-dimensional graphic to form a corrected layout, so that the error value between the developed graphic of the corrected layout and the design layout is less than or equal to the target error.

[0035] Specifically, both existing OPC correction techniques and the OPC correction method used in this invention are employed. Both methods involve conventional edge selection of the target layer, segmentation of the edges, and subsequent OPC correction to form the mask layer. The only difference lies in the edge segmentation process. Under the premise of a consistent design layout, when the first, second, and third segments at the line-end structure are changed from 45nm, 45nm, and 40nm to 35nm, 30nm, and 30nm respectively, simulations show that the critical dimensions of the pattern after development change. When exposed to the wafer, the critical dimensions of the two-dimensional pattern at the line-end structure differ by approximately 3nm after development. This represents a significant breakthrough for low-node applications requiring high precision.

[0036] Step 4: Verify the accuracy of the corrected layout. If there are no errors, create a photomask based on the corrected layout.

[0037] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0038] In summary, the optical proximity correction method of this invention effectively enhances the ability to fill metal gaps and is universally applicable across various technology stages, improving the accuracy of critical dimensions. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and possesses high industrial applicability.

[0039] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. An optical proximity correction method for improving the hole-filling capability of electroplating, characterized in that, At least including: Step 1: Provide a design layout, which consists of various types of graphics, including one-dimensional line graphics and two-dimensional graphics; Step 2: Set different cutting segment design rules according to the target key size and graphic complexity of the two-dimensional graphic: Determine whether the target key size of the two-dimensional graphic is less than or equal to 48 nanometers, and whether the two-dimensional graphic has at least 5 or more parallel line end structures. If so, reduce the length of the cutting segment of the first to Nth segments to the target length. Step 3: Using different cutting segment design rules, form and iteratively cut segments according to the outline of the two-dimensional graphic to form a corrected layout, so that the error value between the developed graphic of the corrected layout and the design layout is less than or equal to the target error. Step 4: Verify the accuracy of the corrected layout. If there are no errors, fabricate a photomask using the corrected layout.

2. The optical proximity correction method for improving the filling ability of electroplating according to claim 1, characterized in that: The pattern described in step one is used to define the area where the metal layer is formed on the substrate.

3. The optical proximity correction method for improving the electroplating hole-filling capability according to claim 2, characterized in that: The material of the metal layer in step one is copper.

4. The optical proximity correction method for improving the electroplating hole-filling capability according to claim 1, characterized in that: In step two, the length of the cut segments in the first to third sections is reduced to the target length.

5. The optical proximity correction method for improving the hole-filling ability of electroplating according to claim 1, characterized in that: The total length of the cut segments in the first to third segments of step two is 90 to 110 nanometers.

6. The optical proximity correction method for improving the hole-filling ability of electroplating according to claim 1, characterized in that: In step two, the length of the cut segments in the first and second sections is reduced to the target length.

7. The optical proximity correction method for improving the electroplating hole-filling capability according to claim 1, characterized in that: The corrected layout described in step three needs to meet the precision requirements for mask manufacturing.

8. The optical proximity correction method for improving the hole-filling ability of electroplating according to claim 1, characterized in that: The two-dimensional graphic in step two does not affect the key dimensions of the one-dimensional line graphic.

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