Method of manufacturing display device and display device

Abstract

A manufacturing method of a display device includes: a step a) of forming a first pixel electrode and a second pixel electrode; a step b) of forming a first light-emitting layer over the first pixel electrode; a step c) of forming a photosensitive resin layer over the second pixel electrode and the first light-emitting layer; a step d) of patterning the photosensitive resin layer to form a photosensitive resin pattern, the photosensitive resin pattern having a structure part configured as a structure and having an opening formed over the second pixel electrode, the structure having at least one of a margin cover part and a pixel boundary part; a step e) of forming a light-emitting material layer over the photosensitive resin pattern and an opening lower part, the opening lower part being at least a part of the second pixel electrode and being formed below the opening; and a step f) in which the structure is left and a first peeled part which is a part of the photosensitive resin pattern and a second peeled part which is a part of the light-emitting material layer are peeled to form a second light-emitting layer over the second pixel electrode.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a manufacturing method of a display device and a display device. BACKGROUND

[0002] The technology described in Patent Document 1 relates to a manufacturing method of an organic EL element (paragraph 0028). In manufacturing the organic EL element, a laminate is formed, which laminates a first electrode layer, a light-emitting layer, and a second electrode layer (paragraphs 0029-0033). In addition, an insulating layer is filled between the laminate (paragraph 0033). The insulating layer covers the outer peripheral portion of the light-emitting layer (paragraph 0033 of Patent Document 1). Figure 1 )。

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENT

[0005] Patent Document 1: Japanese Patent No. 4531324 SUMMARY

[0006] Technical problem to be solved by the invention

[0007] In the technology described in Patent Document 1, a process of forming an insulating layer needs to be performed separately from the processes of forming a first electrode layer, a light-emitting layer, and a second electrode layer. Therefore, the number of processes possessed by the manufacturing method of the organic EL element is large.

[0008] This problem also occurs in display devices other than organic EL elements.

[0009] The present invention was made in view of this problem. An object of the present disclosure is to reduce the number of processes of a manufacturing method of a display device that has a structure having a pixel boundary portion and / or an edge cover portion.

[0010] Solution to problem

[0011] The manufacturing method of the display device of one aspect of the present disclosure includes: a process a) of forming a first pixel electrode and a second pixel electrode; a process b) of forming a first light-emitting layer over the first pixel electrode; a process c) of forming a photosensitive resin layer over the second pixel electrode and the first light-emitting layer; a process d) of patterning the photosensitive resin layer to form a photosensitive resin pattern, the photosensitive resin pattern having a structure part configured as a structure and an opening formed over the second pixel electrode, the structure having at least one of an edge cover part disposed over a peripheral portion of the first light-emitting layer and a pixel boundary portion disposed between the first pixel electrode and the second pixel electrode; a process e) of forming a light-emitting material layer over the opening lower portion and the photosensitive resin pattern, the opening lower portion being at least a portion of the second pixel electrode and being formed under the opening; and a process f) in which the structure is left, a first peeled portion that is a part of the photosensitive resin pattern and is formed over the first light-emitting layer is dissolved in a peeling solution, and a second peeled portion that is a part of the light-emitting material layer and is formed over the first peeled portion is peeled, thereby forming a second light-emitting layer disposed over the second pixel electrode from the light-emitting material layer.

[0012] The display device of one aspect of the present disclosure includes: a substrate having a main surface; a first pixel electrode disposed over the main surface; a second pixel electrode disposed adjacent to the first pixel electrode over the main surface; a first light-emitting layer disposed on a side of the first pixel electrode opposite to a side on which the main surface is disposed; a second light-emitting layer disposed on a side of the second pixel electrode opposite to a side on which the main surface is disposed; and a structure spanning over a peripheral portion of the first light-emitting layer and an outer side of the peripheral portion of the first light-emitting layer and including a first edge cover portion disposed on a peripheral portion of the second light-emitting layer on a side on which the main surface is disposed. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 is a plan view schematically illustrating a display device of a first embodiment.

[0014] Figure 2 is a plan view schematically illustrating each pixel included in the display device of the first embodiment.

[0015] Figure 3 is a cross-sectional view schematically illustrating each pixel included in the display device of the first embodiment.

[0016] Figure 4 is a flowchart illustrating a manufacturing flow of the display device of the first, fourth, and fifth embodiments.

[0017] Figure 5A is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0018] Figure 5B is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0019] Figure 5C is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0020] Figure 5D is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0021] Figure 6 is a view schematically illustrating quantum dots included in the first and second light-emitting layers provided in the display device of the first embodiment.

[0022] Figure 7 is a flowchart showing a procedure of peeling to form the first light-emitting layer provided in the display device of the first and fourth embodiments.

[0023] Figure 8A is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0024] Figure 8B is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0025] Figure 8C is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0026] Figure 8D is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0027] Figure 9A is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0028] Figure 9B is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0029] Figure 9C is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0030] Figure 9D is a cross-sectional view schematically illustrating an intermediate product of the display device of the first embodiment.

[0031] Figure 10Ais an enlarged sectional view schematically illustrating the vicinity of the outer periphery of the first pixel electrode and the first light-emitting layer of the display device of the reference example.

[0032] Figure 10B is an enlarged plan view schematically illustrating the vicinity of the outer periphery of the first pixel electrode and the first light-emitting layer of the display device of the reference example.

[0033] Figure 11A is an enlarged sectional view schematically illustrating the vicinity of the outer periphery of the first pixel electrode and the first light-emitting layer of the display device of the first embodiment.

[0034] Figure 11B is an enlarged plan view schematically illustrating the vicinity of the outer periphery of the first pixel electrode and the first light-emitting layer of the display device of the first embodiment.

[0035] Figure 12A is a plan view schematically illustrating the light-emitting state of a sub-pixel in a display device having no structure.

[0036] Figure 12B is a plan view schematically illustrating the light-emitting state of a sub-pixel in a display device having a structure and the outer periphery of the first light-emitting layer is disposed on the structure.

[0037] Figure 12C is a plan view schematically illustrating the light-emitting state of a sub-pixel in a display device having a structure and the outer periphery of the first light-emitting layer is disposed under the structure.

[0038] Figure 13A is a sectional view schematically illustrating an intermediate product of the display device of the modified example of the first embodiment.

[0039] Figure 13B is a sectional view schematically illustrating an intermediate product of the display device of the modified example of the first embodiment.

[0040] Figure 14 is a sectional view schematically illustrating each pixel of the display device of the second embodiment.

[0041] Figure 15 is a flowchart showing a manufacturing flow of the display device of the second embodiment.

[0042] Figure 16 is a sectional view schematically illustrating each pixel of the display device of the third embodiment.

[0043] Figure 17 is a flowchart showing a manufacturing flow of the display device of the third embodiment.

[0044] Figure 18FIG. 4A is a cross-sectional view schematically illustrating each pixel of the display device of the fourth embodiment.

[0045] Figure 19A FIG. 4B is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0046] Figure 19B FIG. 4C is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0047] Figure 19C FIG. 4D is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0048] Figure 19D FIG. 4E is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0049] Figure 20A FIG. 4F is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0050] Figure 20B FIG. 4G is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0051] Figure 20C FIG. 4H is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0052] Figure 20D FIG. 41 is a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0053] Figure 21A FIG. 4J is also a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0054] Figure 21B FIG. 4K is also a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0055] Figure 21C FIG. 4L is also a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0056] Figure 21D FIG. 4M is also a cross-sectional view schematically illustrating an intermediate product of the display device of the fourth embodiment.

[0057] Figure 22 FIG. 4N is a plan view schematically illustrating an arrangement of sub-pixels of the display device of the fourth embodiment.

[0058] Figure 23A FIG. 4O is a plan view schematically illustrating a planar shape of a first light-emitting layer of the display device of the fourth embodiment.

[0059] Figure 23B Fig. 16 is a plan view schematically illustrating a planar shape of a first light-emitting layer provided in the display device of the fourth embodiment.

[0060] Figure 23C Fig. 17 is a plan view schematically illustrating a planar shape of a second light-emitting layer provided in the display device of the fourth embodiment.

[0061] Figure 24 Fig. 18 is a cross-sectional view schematically illustrating each pixel provided in the display device of the fifth embodiment.

[0062] Figure 25A Fig. 19 is a cross-sectional view schematically illustrating an intermediate product of the display device of the fifth embodiment.

[0063] Figure 25B Fig. 20 is a cross-sectional view schematically illustrating an intermediate product of the display device of the fifth embodiment.

[0064] Figure 25C Fig. 21 is a cross-sectional view schematically illustrating an intermediate product of the display device of the fifth embodiment.

[0065] Figure 25D Fig. 22 is a cross-sectional view schematically illustrating an intermediate product of the display device of the fifth embodiment.

[0066] Figure 26A Fig. 23 is an enlarged cross-sectional view schematically illustrating a vicinity of an outer periphery of a second pixel electrode provided in the display device of the reference example.

[0067] Figure 26B Fig. 24 is an enlarged plan view schematically illustrating a vicinity of an outer periphery of a second pixel electrode provided in the display device of the reference example.

[0068] Figure 27A Fig. 25 is an enlarged cross-sectional view schematically illustrating a vicinity of an outer periphery of a second pixel electrode provided in the display device of the fifth embodiment.

[0069] Figure 27B Fig. 26 is an enlarged plan view schematically illustrating a vicinity of an outer periphery of a second pixel electrode provided in the display device of the fifth embodiment.

[0070] Figure 28A Fig. 27 is a plan view schematically illustrating another example of an arrangement of sub-pixels which can be employed in the first embodiment to the fifth embodiment.

[0071] Figure 28B Fig. 28 is a plan view schematically illustrating another example of an arrangement of sub-pixels which can be employed in the first embodiment to the fifth embodiment.

[0072] Figure 28Cis a plan view schematically illustrating another example of an arrangement of sub-pixels employable in the first embodiment to the fifth embodiment.

[0073] Figure 28D is a plan view schematically illustrating another example of an arrangement of sub-pixels employable in the first embodiment to the fifth embodiment. DETAILED DESCRIPTION

[0074] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In addition, for the drawings, the same reference numerals are attached to the same or equivalent elements, and overlapping description will be omitted.

[0075] 1 First Embodiment

[0076] 1.1 Planar Structure of Display Device

[0077] Figure 1 is a plan view schematically illustrating the display device 1 of the first embodiment.

[0078] The display device 1 is an organic light emitting diode (OLED) display device, a quantum dot light emitting diode (QLED) display device, or the like. Hereinafter, the display device 1 is a QLED display device.

[0079] As shown in Figure 1 , the display device 1 includes a plurality of pixels 11.

[0080] The plurality of pixels 11 are arranged in a matrix shape. The plurality of pixels 11 can also be arranged in a non-matrix shape.

[0081] 1.2 Planar Structure of Pixel

[0082] Figure 2 is a plan view schematically illustrating each pixel 11 included in the display device 1 of the first embodiment.

[0083] As shown in Figure 2 , each pixel 11 includes sub-pixels 21B, 21G, and 21R.

[0084] The sub-pixels 21B, 21G, and 21R are arranged in a straight line shape. The sub-pixels 21B, 21G, and 21R can also be arranged in a non-straight line shape. The sub-pixels 21B and 21G included in each pixel 11 are arranged to be adjacent to each other. The sub-pixels 21G and 21R included in each pixel 11 are arranged to be adjacent to each other. The sub-pixel 21R included in each pixel 11 and the sub-pixel 21B included in the pixel 11 adjacent to one side of each pixel 11 are arranged to be adjacent to each other. The light emitting areas of the sub-pixels 21B, 21G, and 21R included in each pixel 11 can be the same or different from each other. The shapes of the light emitting areas of the sub-pixels 21B, 21G, and 21R included in each pixel 11 can be the same or different from each other.

[0085] The sub-pixels 21B, 21G, and 21R respectively emit blue, green, and red light. The sub-pixels 21B, 21G, and 21R can respectively emit light of colors different from blue, green, and red. Each pixel 11 can also have a plurality of sub-pixels that emit light of the same color.

[0086] Contact holes 21BC, 21GC, and 21RC are respectively formed in the sub-pixels 21B, 21G, and 21R.

[0087] 1.3 Cross-sectional structure of a pixel

[0088] Figure 3 is a cross-sectional view schematically illustrating each pixel 11 included in the display device 1 of the first embodiment. Figure 3 illustrates Figure 2 a cross section at a position of the cutting line III-III depicted in

[0089] As Figure 3 illustrated, the display device 1 includes a substrate 31, pixel electrodes 32B, 32G, and 32R, charge transport layers 33B, 33G, and 33R, light-emitting layers 34B, 34G, and 34R, a charge transport layer 35, and a common electrode 36.

[0090] The pixel electrode 32B, the charge transport layer 33B, and the light-emitting layer 34B are disposed in the sub-pixel 21B. The pixel electrode 32G, the charge transport layer 33G, and the light-emitting layer 34G are disposed in the sub-pixel 21G. The pixel electrode 32R, the charge transport layer 33R, and the light-emitting layer 34R are disposed in the sub-pixel 21R. The charge transport layer 33 and the common electrode 36 are disposed across the sub-pixels 21B, 21G, and 21R.

[0091] The pixel electrodes 32B, 32G, and 32R, the charge transport layers 33B, 33G, and 33R, the light-emitting layers 34B, 34G, and 34R, the charge transport layer 35, and the common electrode 36 are disposed on a main surface 31S of the substrate 31. The substrate 31 includes an interlayer insulating film 41. The pixel electrodes 32B, 32G, and 32R, the charge transport layers 33B, 33G, and 33R, the light-emitting layers 34B, 34G, and 34R, the charge transport layer 35, and the common electrode 36 are disposed on the interlayer insulating film 41. The interlayer insulating film 41 separates elements disposed on the interlayer insulating film 41 from elements disposed under the interlayer insulating film 41. Thus, the interlayer insulating film 41 electrically insulates elements disposed on the interlayer insulating film 41 from elements disposed under the interlayer insulating film 41. The elements disposed under the interlayer insulating film 41 include wirings, switching elements, and the like. The switching elements are thin film transistors (TFTs) and the like.

[0092] The pixel electrodes 32B, 32G, and 32R are electrically connected to the above-mentioned switching elements via connection conductors disposed inside the contact holes 21BC, 21GC, and 21RC.

[0093] The charge transport layers 33B, 33G, and 33R are disposed on the pixel electrodes 32B, 32G, and 32R, respectively. The light emitting layers 34B, 34G, and 34R are disposed on the charge transport layers 33B, 33G, and 33R, respectively. Thus, the light emitting layers 34B, 34G, and 34R are disposed on the side opposite to the side of the pixel electrodes 32B, 32G, and 32R on which the main surface 31S of the substrate 31 is disposed. The charge transport layer 35 is disposed on the light emitting layers 34B, 34G, and 34R. The common electrode 36 is disposed on the charge transport layer 35.

[0094] The pixel electrodes 32B and 32G included in each pixel 11 are disposed adjacent to each other. The pixel electrodes 32G and 32R included in each pixel 11 are disposed adjacent to each other. The pixel electrode 32R included in each pixel 11 and the pixel electrode 32B included in the pixel 11 adjacent to the side of each pixel 11 are disposed adjacent to each other.

[0095] The display device 1 can include a charge injection layer between the pixel electrode 32B and the charge transport layer 33B, between the pixel electrode 32G and the charge transport layer 33G, or between the pixel electrode 32B and the charge transport layer 33R. The display device 1 can include a charge blocking layer between the charge transport layer 33B and the light emitting layer 34B, between the charge transport layer 33G and the light emitting layer 34G, or between the charge transport layer 33R and the light emitting layer 34R. The display device 1 can include a charge blocking layer between the light emitting layer 34B and the charge transport layer 35, between the light emitting layer 34G and the charge transport layer 35, or between the light emitting layer 34R and the charge transport layer 35. The display device 1 can include a charge injection layer between the charge transport layer 35 and the common electrode 36.

[0096] 1.4 Light emission from sub-pixels

[0097] The pixel electrodes 32B, 32G, and 32R are in contact with the light emitting layers 34B, 34G, and 34R, respectively, via the charge transport layers 33B, 33G, and 33R. The charge transport layers 33B, 33G, and 33R transport the first charges. Thus, the first charges can be injected from the pixel electrodes 32B, 32G, and 32R to the light emitting layers 34B, 34G, and 34R, respectively, via the charge transport layers 33B, 33G, and 33R.

[0098] The common electrode 36 is in contact with the light-emitting layers 34B, 34G, and 34R via the charge transport layer 35. The charge transport layer 35 transports the second charge. Thus, the second charge can be injected from the common electrode 36 to the light-emitting layers 34B, 34G, and 34R via the charge transport layer 35.

[0099] When a potential difference is applied between the pixel electrode 32B and the common electrode 36, the first charge is injected from the pixel electrode 32B to the light-emitting layer 34B via the charge transport layer 33B. In addition, the second charge is injected from the common electrode 36 to the light-emitting layer 34B via the charge transport layer 35. As a result, the first charge and the second charge recombine in the light-emitting layer 34B, and the light-emitting layer 34B emits blue light.

[0100] When a potential difference is applied between the pixel electrode 32G and the common electrode 36, the first charge is injected from the pixel electrode 32G to the light-emitting layer 34G via the charge transport layer 33G. In addition, the second charge is injected from the common electrode 36 to the light-emitting layer 34G via the charge transport layer 35. As a result, the first charge and the second charge recombine in the light-emitting layer 34G, and the light-emitting layer 34G emits green light.

[0101] When a potential difference is applied between the pixel electrode 32R and the common electrode 36, the first charge is injected from the pixel electrode 32R to the light-emitting layer 34R via the charge transport layer 33R. In addition, the second charge is injected from the common electrode 36 to the light-emitting layer 34R via the charge transport layer 35. As a result, the first charge and the second charge recombine in the light-emitting layer 34R, and the light-emitting layer 34R emits red light.

[0102] 1.5 Inverted structure and regular structure

[0103] The display device 1 has an inverted structure or a regular structure.

[0104] In the case where the display device 1 has the inverted structure, the first charge is an electron. In addition, the second charge is a hole. In addition, the pixel electrodes 32B, 32G, and 32R are cathodes. In addition, the common electrode 36 is an anode. Furthermore, the charge transport layers 33B, 33G, and 33R are electron transport layers. In addition, the charge transport layer 35 is a hole transport layer.

[0105] In the case where the display device 1 has the regular structure, the first charge is a hole. In addition, the second charge is an electron. In addition, the pixel electrodes 32B, 32G, and 32R are anodes. In addition, the common electrode 36 is a cathode. In addition, the charge transport layers 33B, 33G, and 33R are hole transport layers. Furthermore, the charge transport layer 35 is an electron transport layer.

[0106] Hereinafter, pixel electrodes 32B and 32G are sometimes referred to as first pixel electrodes. Pixel electrode 32R is sometimes referred to as second pixel electrodes. Charge transport layers 33B, 33G, and 33R are sometimes referred to as second charge transport layers. Light-emitting layers 34B, 34, etc., other than the last formed light-emitting layer, are sometimes referred to as first light-emitting layers. Light-emitting layers 34R, etc., the last formed light-emitting layers, are sometimes referred to as second light-emitting layers. Charge transport layer 35 is sometimes referred to as the first charge transport layer. Common electrode 36 is sometimes referred to as the counter electrode.

[0107] 1.6 Structures

[0108] like Figure 3 As shown, each pixel 11 has structures 51, 52 and 53 that function as embankments and edge covers.

[0109] Structure 51 spans over the outer periphery of the first pixel electrode 32B and the first light-emitting layer 34B, between the first pixel electrode 32B and the first light-emitting layer 34B and the first pixel electrode 32G and the first light-emitting layer 34G, and over the outer periphery of the first pixel electrode 32G and the first light-emitting layer 34G. Therefore, structure 51 includes an edge cover portion 51B disposed on the outer periphery of the first pixel electrode 32B and the first light-emitting layer 34B, a pixel boundary portion 51i disposed between the first pixel electrode 32B and the first light-emitting layer 34B and the first pixel electrode 32G and the first light-emitting layer 34G, and an edge cover portion 51G disposed on the outer periphery of the first pixel electrode 32G and the first light-emitting layer 34G. Thus, the outer periphery of the first light-emitting layer 34B is covered by edge cover portions 51B and 53B. Furthermore, the outer periphery of the first light-emitting layer 34G is covered by edge cover portions 51G and 52G. Therefore, when the charge transport layer 35 is formed by spin coating, the outer peripheries of the first light-emitting layers 34B and 34G become difficult to peel off due to the flow of the charge transport layer solution and the peeling performed to form the second light-emitting layer 34R. Thus, sub-pixels 21B and 21G can emit light uniformly. Furthermore, the thickness of the first light-emitting layers 34B and 34G can be made uniform, extending to their outer peripheries. Therefore, sub-pixels 21B and 21G can emit light uniformly. Consequently, the light-emitting area of ​​sub-pixels 21B and 21G can be increased.

[0110] The structure 51 may include only the edge cover portions 51B and 51G, or it may include only the pixel boundary portion 51i.

[0111] The structure 52 spans over the outer periphery of the first pixel electrode 32G and the first light emitting layer 34G, between the first pixel electrode 32G and the first light emitting layer 34G and the second pixel electrode 32R and the charge transport layer 33R, and over the outer periphery of the second pixel electrode 32R and the charge transport layer 33R. Thus, the structure 52 includes an edge cover portion 52G disposed over the outer periphery of the first pixel electrode 32G and the first light emitting layer 34G, a pixel boundary portion 52i disposed between the first pixel electrode 32G and the first light emitting layer 34G and the second pixel electrode 32R and the charge transport layer 33R, and an edge cover portion 52R disposed over the outer periphery of the second pixel electrode 32R and the charge transport layer 33R. Thereby, the outer periphery of the first light emitting layer 34G is covered with the edge cover portion 52G. Thus, when the charge transport layer 35 is formed by spin coating, the outer periphery of the first light emitting layer 34G becomes difficult to peel off due to the flow of the charge transport layer solution, peeling for forming the second light emitting layer 34R, or the like. Thereby, it is possible to cause the sub-pixel 21G to emit light uniformly. In addition, it is possible to make the thickness of the first light emitting layer 34G uniform up to the outer periphery of the first light emitting layer 34G. Thereby, it is possible to cause the sub-pixel 21G to emit light uniformly. Thereby, it is possible to expand the light emitting area of the sub-pixel 21G.

[0112] The structure 52 can include only the edge cover portions 52G and 52R, or can include only the pixel boundary portion 52i.

[0113] The second light emitting layer 34R has a periphery that climbs over the structures 52 and 53. The structure 52 spans over the outer periphery of the first light emitting layer 34G and outside the outer periphery of the first light emitting layer 34G, and dips under the outer periphery of the second light emitting layer 34R. Thus, the structure 52 includes a first edge cover portion 521 disposed under the outer periphery of the second light emitting layer 34R, that is, on the side of the outer periphery of the second light emitting layer 34R where the main surface 31S of the substrate 31 is disposed. That is, the first edge cover portion 521 is a region of the structure 52 that is sandwiched by the second light emitting layer 34R and the substrate 31.

[0114] The planar position of the outer periphery of the second pixel electrode 32R coincides with the planar position of the outer periphery of the charge transport layer 33R. Thus, the edge cover portion 52R becomes a second edge cover portion 522 disposed over the outer periphery of the second pixel electrode 32R and a third edge cover portion 523 disposed over the outer periphery of the charge transport layer 33R.

[0115] The structure 53 is disposed across the outer periphery of the first pixel electrode 32B and the first light emitting layer 34B, between the first pixel electrode 32B and the first light emitting layer 34B and the second pixel electrode 32R and the charge transport layer 33R, and the outer periphery of the second pixel electrode 32R and the charge transport layer 33R. Thus, the structure 53 includes an edge cover portion 53B disposed on the outer periphery of the first pixel electrode 32B and the first light emitting layer 34B, a pixel boundary portion 53i disposed between the first pixel electrode 32B and the first light emitting layer 34B and the second pixel electrode 32R and the charge transport layer 33R, and an edge cover portion 53R disposed on the outer periphery of the second pixel electrode 32R and the charge transport layer 33R. Thereby, the outer periphery of the first light emitting layer 34B is covered by the edge cover portion 51B. Thus, when the charge transport layer 35 is formed by spin coating, the outer periphery of the first light emitting layer 34B becomes difficult to peel off due to the flow of the charge transport layer solution, peeling for forming the second light emitting layer 34R, or the like. Thereby, it is possible to cause the sub-pixel 21B to emit light uniformly. In addition, it is possible to make the thickness of the first light emitting layer 34B uniform up to the outer periphery of the first light emitting layer 34B. Thereby, it is possible to cause the sub-pixel 21B to emit light uniformly. Thereby, it is possible to expand the light emitting area of the sub-pixel 21B.

[0116] The structure 53 can include only the edge cover portions 53G and 53R, or can include only the pixel boundary portion 53i.

[0117] The structure 53 is disposed across the outer periphery of the first light emitting layer 34B and outside the outer periphery of the first light emitting layer 34B, and dips under the outer periphery of the second light emitting layer 34R. Thus, the structure 53 includes a first edge cover portion 531 disposed under the outer periphery of the second light emitting layer 34R, that is, on the side of the outer periphery of the second light emitting layer 34R on which the main surface 31S of the substrate 31 is disposed.

[0118] The planar position of the outer periphery of the second pixel electrode 32R coincides with the planar position of the outer periphery of the charge transport layer 33R. Thus, the edge cover portion 53R becomes a second edge cover portion 532 disposed on the outer periphery of the second pixel electrode 32R and a third edge cover portion 533 disposed on the outer periphery of the charge transport layer 33R.

[0119] The outer periphery of the first light emitting layer 34B is disposed under the structures 51 and 53. The outer periphery of the first light emitting layer 34G is disposed under the structures 51 and 52. In contrast, the outer periphery of the second light emitting layer 34R is disposed over the structures 52 and 53.

[0120] The outer periphery of the first light emitting layer 34B is disposed between the structure 51 or 53 and the interlayer insulating film 41. The outer periphery of the first light emitting layer 34G is disposed between the structure 51 or 52 and the interlayer insulating film 41.

[0121] Further, according to the display device 1 described above, the outer peripheral portion of the first light emitting layer 34B is covered with the edge cover portion 51B, the outer peripheral portion of the first light emitting layer 34G is covered with the edge cover portion 51G, and the pixel boundary portion 51i is provided between the first light emitting layer 34B and the first light emitting layer 34G. Thus, the flow of the leakage current between the sub-pixel 21B and the sub-pixel 21G can be suppressed. Further, the outer peripheral portion of the first light emitting layer 34G is covered with the edge cover portion 52G, and the pixel boundary portion 52i is provided between the first light emitting layer 34G and the second light emitting layer 34R. Thus, the flow of the leakage current between the sub-pixel 21G and the sub-pixel 21R can be suppressed. Further, the outer peripheral portion of the first light emitting layer 34B is covered with the edge cover portion 53B, and the pixel boundary portion 53i is provided between the first light emitting layer 34B and the second light emitting layer 34R. Thus, the flow of the leakage current between the sub-pixel 21B and the sub-pixel 21R can be suppressed. Further, according to the display device 1 described above, the structures 51, 52, and 53 are formed between the outer peripheral portions of the first pixel electrode 32B, the first pixel electrode 32G, and the second pixel electrode 32R and the common electrode 36. Thus, the concentration of the current to the outer peripheral portions can be suppressed, and uniform light emission within the sub-pixels 21B, 21G, and 21R can be achieved. Further, in the case where the display device 1 is observed in cross section, as shown in FIG. 6, the structures 51, 52, and 53 are separated from each other, but in the case where the display device 1 is observed in plan view, the structures 51, 52, and 53 can be continuous and connected to each other. In the case where the structures 51, 52, and 53 are continuous, peeling of the structures 51, 52, and 53 can be suppressed. In the case where the display device 1 is observed in plan view, the structures 51, 52, and 53 can have a stripe-like planar shape. In this case, the aperture ratio can be increased. Figure 3

[0122] 1.7 Materials constituting each layer

[0123] The pixel electrodes 32B, 32G, and 32R and the common electrode 36 are constituted by a conductive material. The conductive material includes, for example, at least one selected from the group consisting of a metal and a transparent conductive oxide. The metal includes, for example, at least one selected from the group consisting of Al, Cu, Au, and Ag. The transparent conductive oxide includes, for example, at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum zinc oxide (AZO), and boron zinc oxide (BZO). The pixel electrodes 32B, 32G, and 32R and the common electrode 36 can be one layer constituted by one kind of conductive material, or can be a laminate of two or more layers constituted by two or more kinds of different conductive materials. The two or more layers can simultaneously include a layer constituted by a metal and a layer constituted by a transparent conductive oxide.

[0124] ​The electron transport layer is composed of an electron transport material. The electron transport material, for example, contains at least one selected from the group consisting of zinc oxide, magnesium-zinc oxide, titanium oxide, and strontium titanium oxide. The zinc oxide is, for example, ZnO. The titanium oxide is, for example, Ti02. The strontium titanium oxide is, for example, SrTi03. The electron transport material can be an electron transport material composed of one substance or an electron transport material composed of a mixture of two or more substances.

[0125] The hole transport layer is composed of a hole transport material. The hole transport material, for example, contains at least one selected from the group consisting of a hole transport inorganic material and a hole transport organic material. The hole transport inorganic material, for example, contains at least one selected from the group consisting of an oxide, a nitride, and a carbide of a metal. The metal contains at least one selected from the group consisting of Zn, Cr, Ni, Ti, Nb, Al, Si, Mg, Ta, Hf, Zr, Y, La, Sr, and Mo. The hole transport material contains at least one selected from the group consisting of 4,4',4"-tris(9-carbazoyl)triphenylamine (TCTA), 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (NPB), zinc phthalocyanine (ZnPC), di[4-(N,N-dimethylphenylamino)phenyl]cyclohexane (TAPC), 4,4'-bis(carbazol-9-yl) biphenyl (CBP), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HATCN), poly(N-vinylcarbazole) (PVK), poly(2,7-(9,9-dioctylfluorene)-co-2,7-(4,4'-di-n-decylcyclohexyl)-9,9-dioctylfluorene) (PFO-DC), and poly(2,7-(9,9-dioctylfluorene)-co-2,7-(4,4'-di-n-decylcyclohexyl)-9,9-dioctylfluorene) (PFO-DC). The hole transport material can be a hole transport material composed of one substance or a hole transport material composed of a mixture of two or more substances.

[0126] (9,9-di-n-octylfluorene)-(1,4-phenylene-((4-tert-butylphenyl)imino)-1,4-phenylene (TFB), poly(triphenylamine) derivative (Poly-TPD), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonic acid) (PEDOT-PSS). The hole transport material can be a hole transport material composed of one substance or a hole transport material composed of a mixture of two or more substances.

[0127] The light-emitting layer 34B is composed of a blue light-emitting material. The light-emitting layer 34G is composed of a green light-emitting material. The light-emitting layer 34R is composed of a red light-emitting material. The blue light-emitting material, the green light-emitting material, and the red light-emitting material contain quantum dots. The quantum dots are, for example, semiconductor fine particles having a particle diameter of 100 nm or less. The semiconductor fine particles contain, for example, at least one selected from the group consisting of a II-VI compound, a III-V compound, a IV compound, and a compound having a perovskite structure. The II-VI compound contains, for example, at least one selected from the group consisting of MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, and HgTe. The III-V compound contains, for example, at least one selected from the group consisting of GaAs, GaP, InN, InAs, InP, and InSb. The IV compound contains, for example, at least one selected from the group consisting of Si and Ge. In the case where the semiconductor fine particles contain a compound having a perovskite structure, the compound having a perovskite structure is, for example, a composite halide perovskite. The composite halide perovskite contains, for example, at least one selected from the group consisting of Cl, Br, and I. The semiconductor fine particles can be semiconductor fine particles composed of a crystal, or semiconductor fine particles having a core / shell structure, and having a core composed of the crystal and a shell covering the core and composed of a shell material having a wide band gap.

[0128] 1.8 Manufacturing of display device

[0129] Figure 4 is a flowchart showing a manufacturing flow of the display device 1 of the first embodiment. Figures 5A to 5D is a cross-sectional view schematically showing an intermediate product of the display device 1 of the first embodiment.

[0130] As shown in Figure 4 , the manufacturing method of the display device 1 includes steps S101 to S111.

[0131] In step S101, the substrate 31 shown in Figure 5A is prepared.

[0132] In the next step S102, the first pixel electrodes 32B and 32G and the second pixel electrode 32R shown in Figure 5A are formed on the main surface 31S of the substrate 31. The first pixel electrodes 32B and 32G and the second pixel electrode 32R are formed by forming a conductive material layer on the main surface 31S of the substrate 31 using a sputtering method, an evaporation method, a coating method, or the like, and patterning the formed conductive material layer using etching or the like.

[0133] In the next step S103, a second charge transport layer 33B, 33G, and 33R illustrated in FIG. 3 is formed on the first pixel electrode 32B, the first pixel electrode 32G, and the second pixel electrode 32R, respectively. Figure 5A The second charge transport layers 33B, 33G, and 33R are formed by a sputtering method, an evaporation method, a coating method, or the like. The second charge transport layers 33B, 33G, and 33R are each formed to have a planar shape identical to a planar shape of the first pixel electrode 32B, the first pixel electrode 32G, and the second pixel electrode 32R.

[0134] In the next step S104, a first light emitting layer 34B and 34G illustrated in FIG. 3 is formed on the first pixel electrode 32B and 32G, respectively. Figure 5A The first light emitting layers 34B and 34G are each formed so as to cover the entirety of the first pixel electrode 32B and 32G. Thereby, the entirety of the area in which the first pixel electrode 32B and 32G is formed can be caused to emit light. The first light emitting layers 34B and 34G are formed by a lift-off process. With regard to the formation of the first light emitting layers 34B and 34G by the lift-off process, a description will be given below.

[0135] In the next step S105, a photosensitive resin layer 61R illustrated in FIG. 3 is formed on the first pixel electrode 32B and 32G, the second pixel electrode 32R, the second charge transport layers 33B, 33G, and 33R, and the first light emitting layers 34B and 34G. Figure 5A The photosensitive resin layer 61R contains a positive photosensitive resin. The positive photosensitive resin is a photosensitive resin having high solubility to a developing solution when a photosensitive ray is irradiated. The photosensitive ray is an electromagnetic wave, an electron beam, or the like. The electromagnetic wave is an ultraviolet ray or the like. The developing solution is an alkaline solution or the like. The developing solution can also contain a surfactant. The positive photosensitive resin is JS100 manufactured by JSR Corporation or the like. However, the positive photosensitive resin is a resin that is not dissolved in a light emitting material liquid described below. The photosensitive resin layer 61R is formed by a coating method or the like. In a case where the photosensitive resin layer 61R is formed by a coating method, the photosensitive resin layer 61R is formed using a die coater, an inkjet coater, a spin coater, or the like.

[0136] In the next process S106, the photosensitive resin layer 61R is patterned by development, and a first light emitting layer 34R illustrated in FIG. 3 is formed. Figure 5BThe photosensitive resin pattern 62R is shown. The photosensitive resin pattern 62R has the structure portions 51P, 52P, and 53P. The structure portions 51P, 52P, and 53P become the structure 51Q, 52Q, and 53Q described below, respectively, and finally become the structures 51, 52, and 53, respectively. The opening 62RA is formed in the photosensitive resin pattern 62R. The opening 62RA is disposed on the second pixel electrode 32R. The planar shape of the opening 62RA is smaller than the planar shapes of the second pixel electrode 32R and the charge transport layer 33R. Thus, the photosensitive resin pattern 62R is formed on the outer peripheral portions of the second pixel electrode 32R and the charge transport layer 33R. The photosensitive resin layer 61R is patterned by photolithography. The photosensitive resin layer 61R is patterned by irradiating a portion of the photosensitive resin layer 61R with the mask 63R shown and causing the portion irradiated with the photosensitive light R to dissolve in a developing solution. Figure 5A The mask 63R for patterning shown is used to irradiate a portion of the photosensitive resin layer 61R and cause the portion irradiated with the photosensitive light R to dissolve in a developing solution, thereby being patterned.

[0137] In the next step S107, the opening lower portion 32RA, which is at least a portion of the second pixel electrode 32R and is formed under the opening 62RA, and the photosensitive resin pattern 62R are formed with the first light emitting layer 34B thereon. Figure 5C The light emitting material layer 64R is shown. The light emitting material layer 64R is formed so as to cover the entire opening lower portion 32RA and the photosensitive resin pattern 62R. The light emitting material layer 64R is formed by forming a coating film by applying a light emitting material liquid containing quantum dots and a dispersion medium in which the quantum dots are dispersed, and heating the formed coating film to evaporate the dispersion medium from the formed coating film. The dispersion medium is, for example, octane. The light emitting material liquid can also contain an electron transport material, a hole transport layer material, a resist material, a silane coupling agent, a thermosetting resin, and the like.

[0138] In the next step S108, the structure 51Q, 52Q, and 53Q shown are left, and the Figure 5D Figure 5C The first peeled portion 65R, which is a portion of the photosensitive resin pattern 62R, is dissolved in a developing solution, and the second peeled portion 66R, which is a portion of the light emitting material layer 64R, is peeled off, thereby forming the second light emitting layer 34R from the light emitting material layer 64R. Figure 5D The second light emitting layer 34R is shown. The first peeled portion 65R is a portion formed on the first light emitting layers 34B and 34G. The second peeled portion 66R is a portion formed on the first peeled portion 65R. Thus, the second light emitting layer 34R is disposed on the second pixel electrode 32R.

[0139] ​The first peeled portion 65R and the second peeled portion 66R are peeled so that the structure 51Q remains over the outer peripheral portions of the first pixel electrode 32B, the charge transport layer 33B, the first light emitting layer 34B, the first pixel electrode 32G, the charge transport layer 33G, and the first light emitting layer 34G as an edge cover. In addition, the first peeled portion 65R and the second peeled portion 66R are peeled so that the structure 52Q remains over the outer peripheral portions of the first pixel electrode 32G, the charge transport layer 33G, the first light emitting layer 34G, the second pixel electrode 32R, the charge transport layer 33R, and the second light emitting layer 34R as an edge cover. In addition, the first peeled portion 65R and the second peeled portion 66R are peeled so that the structure 53Q remains over the outer peripheral portions of the first pixel electrode 32B, the charge transport layer 33B, the first light emitting layer 34B, the second pixel electrode 32R, the charge transport layer 33R, and the second light emitting layer 34R as an edge cover.

[0140] The first peeled portion 65R and the second peeled portion 66R are peeled by irradiating a portion of the photosensitive resin pattern 62R with a light R for peeling through a mask 67R for peeling and dissolving the portion irradiated with the light R in a developing solution. At the time of irradiating a portion of the photosensitive resin pattern 62R with the light R, the light R is irradiated to the first peeled portion 65R without irradiating the light R to the structure portions 51P, 52P, and 53P. The region irradiated with the light R is a region other than the region in which the second pixel electrode 32R is arranged, the region between the first pixel electrode 32B and the first pixel electrode 32G, the region between the first pixel electrode 32G and the second pixel electrode 32R, and the region between the first pixel electrode 32B and the second pixel electrode 32R.

[0141] After the photosensitive resin layer 61R is patterned in step S106, the first peeled portion 65R can be dissolved in a peeling solution in step S108 because the photosensitive resin layer 61R is composed of a positive photosensitive resin. In addition, in step S108, the second peeled portion 66R which is a portion of the light emitting material layer 64R is arranged over the first peeled portion 65R. However, since the light emitting material layer 64R can transmit the light R such as ultraviolet rays, the first peeled portion 65R can be photosensitive by the light R such as ultraviolet rays. In addition, since the light emitting material layer 64R can transmit the developing solution, the first peeled portion 65R can be dissolved in the developing solution.

[0142] In the next step S109, the structures 51Q, 52Q, and 53Q are post-baked. Thereby, the structures 51Q, 52Q, and 53Q are changed to Figure 3The structures 51, 52, and 53 shown are composed of cured positive photosensitive resin. Steps S108 and S109 are performed consecutively. Therefore, no other processes are performed between steps S108 and S109.

[0143] In the next step S110, the following steps are formed. Figure 3 The first charge transport layer 35 is shown. The first charge transport layer 35 is positioned opposite the first pixel electrode 32B, separated by the first light-emitting layer 34B; opposite the first pixel electrode 32G, separated by the first light-emitting layer 34G; and opposite the second pixel electrode 32R, separated by the second light-emitting layer 34R. The first charge transport layer 35 is formed by sputtering, vapor deposition, coating, or other methods.

[0144] In the next step S111, the following steps are formed. Figure 3 The opposing electrode 36 is shown. The opposing electrode 36 is opposite to the first pixel electrode 32B through the first charge transport layer 35, the first light-emitting layer 34B and the second charge transport layer 33B, opposite to the first pixel electrode 32G through the first charge transport layer 35, the first light-emitting layer 34G and the second charge transport layer 33G, and opposite to the second pixel electrode 32R through the first charge transport layer 35, the second light-emitting layer 34R and the second charge transport layer 33R.

[0145] According to the manufacturing method of the display device 1 described above, structures 51Q, 52Q, and 53Q can be formed when the second light-emitting layer 34R is formed from the light-emitting material layer 64R. Therefore, it is not necessary to perform a process specifically for forming structures 51Q, 52Q, and 53Q. As a result, the number of processes in the manufacturing method of the display device 1 can be reduced. For example, the process of forming a dam, which is usually performed before forming the light-emitting layers 34B, 34G, and 34R by a peeling process, can be eliminated.

[0146] Furthermore, according to the manufacturing method of the display device 1 described above, after step S105, the outer peripheries of the first light-emitting layers 34B and 34G are covered by a photosensitive resin layer 61R, a photosensitive resin pattern 62R, structures 51Q, 52Q and 53Q, or structures 51, 52 and 53. Therefore, after step S105, it is possible to prevent the first light-emitting layers 34B and 34G from peeling off from the outer periphery.

[0147] Generally, the fluorescence lifetime of the first quantum dot emitting blue light in the first emissive layer 34B and the first quantum dot emitting green light in the first emissive layer 34G is shorter than that of the second quantum dot emitting red light in the second emissive layer 34R. Furthermore, the photoluminescence quantum efficiency of the first quantum dot emitting blue light in the first emissive layer 34B and the first quantum dot emitting green light in the first emissive layer 34G is lower than that of the second quantum dot emitting red light in the second emissive layer 34R. Therefore, the luminous efficiency of the first quantum dot emitting blue light in the first emissive layer 34B and the first quantum dot emitting green light in the first emissive layer 34G is lower than that of the second quantum dot emitting red light in the second emissive layer 34R. Additionally, when the emissive layers are formed in the order of emissive layer 34B, emissive layer 34G, and emissive layer 34R, emissive layers 34B and 34G can be formed on the entire surface of pixel electrodes 32B and 32G. Therefore, when the light-emitting layers are formed in the order of light-emitting layer 34B, light-emitting layer 34G, and light-emitting layer 34R, light-emitting layers 34B and 34G containing only first quantum dots with low luminous efficiency can be formed on the entire surface of pixel electrodes 32B and 32G, respectively. Therefore, light-emitting layers 34B and 34G can emit light across the entire surface of pixel electrodes 32B and 32G, respectively. Therefore, the display device 1 can perform a bright display.

[0148] However, the light-emitting layers can also be formed in the order of light-emitting layer 34R, light-emitting layer 34G, and light-emitting layer 34B.

[0149] Figure 6 It is a schematic diagram illustrating the relationship between the particle sizes of quantum dots in the first light-emitting layers 34B and 34G and the second light-emitting layer 34R of the display device 1 in the first embodiment.

[0150] like Figure 6 As shown, when the light-emitting layers are formed in the order of light-emitting layer 34R, light-emitting layer 34G, and light-emitting layer 34B, the particle size of the first quantum dot QDB contained in the first light-emitting layer 34B and the first quantum dot QDG contained in the first light-emitting layer 34G is larger than the particle size of the second quantum dot QDR contained in the second light-emitting layer 34R. Generally speaking, the larger the particle size of the quantum dots contained in the light-emitting layer, the less likely the light-emitting layer is to be damaged during development, exposure, and other processes. Therefore, when the light-emitting layers are formed in the order of light-emitting layer 34R, light-emitting layer 34G, and light-emitting layer 34B, by making the particle size of the first quantum dot QDB contained in the first light-emitting layer 34B and the first quantum dot QDG contained in the first light-emitting layer 34G larger than the particle size of the second quantum dot QDR contained in the second light-emitting layer 34R, damage to the first light-emitting layers 34B and 34G, as well as the second light-emitting layer 34R, can be suppressed during development, exposure, and other processes.

[0151] 1.9 Formation of the first light-emitting layer by peeling

[0152] Figure 7 This is a flowchart illustrating the process of forming the first light-emitting layer 34B of the display device 1 of the first embodiment by peeling. Figures 8A to 8D This is a schematic cross-sectional view of an intermediate product of the display device 1 according to the first embodiment.

[0153] The method for forming the first light-emitting layer 34B includes Figure 7 The processes S121 to S124 are shown.

[0154] In step S121, a second pixel electrode 32B and 32G, a second pixel electrode 32R, and a second charge transport layer 33B, 33G, and 33R are formed. Figure 8A The photosensitive resin layer 61B is shown. The photosensitive resin layer 61B contains the same positive photosensitive resin as the positive photosensitive resin contained in the photosensitive resin layer 61R. The photosensitive resin layer 61B is formed by the same method as that used to form the photosensitive resin layer 61R.

[0155] In the next step S122, the photosensitive resin layer 61B is patterned to form Figure 8B The photosensitive resin pattern 62B is shown. An opening 62BA is formed in the photosensitive resin pattern 62B. The opening 62BA is disposed on the pixel electrode 32B. The planar shape of the opening 62BA is larger than the planar shape of the pixel electrode 32B. Therefore, the photosensitive resin pattern 62B is not formed on the outer periphery of the pixel electrode 32B. The photosensitive resin layer 61B is patterned by photolithography. The photosensitive resin layer 61B transmits the photosensitive light R through... Figure 8A The patterning mask 63B shown irradiates a portion of the photosensitive resin layer 61B and causes the portion irradiated with the photosensitive light R to dissolve in the developing solution, thereby being patterned.

[0156] In the next step S123, a pattern is formed on the first pixel electrode 32B and the photosensitive resin pattern 62B. Figure 8C The light-emitting material layer 64B is shown. The light-emitting material layer 64B is formed to cover the first pixel electrode 32B and the photosensitive resin pattern 62B. The light-emitting material layer 64B is formed by the same method as that used to form the light-emitting material layer 64R.

[0157] In the next step S124, make Figure 8C The first peeled portion 65B, which is part of the photosensitive resin pattern 62B, is dissolved in the developer, and the second peeled portion 66B, which is part of the luminescent material layer 64B, is peeled off, thereby forming a pattern as shown in the figure.Figure 8D The first light emitting layer 34B is shown. The first peeled portion 65B and the second peeled portion 66B are formed by irradiating a portion of the photosensitive resin pattern 62B with a light R and dissolving the portion irradiated with the light R in a developing solution, thereby being peeled. The area irradiated with the light R is other than the area in which the first pixel electrode 32B is disposed. The light R can be irradiated to the contact hole portion in which the contact holes 21BC, 21GC, and 21RC are formed when the portion of the photosensitive resin pattern 62B is irradiated with the light R. Figure 8C The mask 67B for peeling shown is used to irradiate a portion of the photosensitive resin pattern 62B with a light R and dissolve the portion irradiated with the light R in a developing solution, thereby being peeled. The area irradiated with the light R is other than the area in which the first pixel electrode 32B is disposed. The light R can be irradiated to the contact hole portion in which the contact holes 21BC, 21GC, and 21RC are formed when the portion of the photosensitive resin pattern 62B is irradiated with the light R.

[0158] Figure 7 is a flowchart showing a flow of peeling to form the first light emitting layer 34G of the display device 1 of the first embodiment. Figures 9A to 9D is a cross-sectional view schematically showing an intermediate product of the display device 1 of the first embodiment.

[0159] The method of forming the first light emitting layer 34G includes Figure 7 the steps S121 to S124 shown.

[0160] In step S121, the photosensitive resin layer 61G is formed on the first pixel electrodes 32B and 32G, the second pixel electrode 32R, the second charge transport layers 33B, 33G, and 33R, and the first light emitting layer 34B. Figure 9A The photosensitive resin layer 61G includes the same positive photosensitive resin as the positive photosensitive resin included in the photosensitive resin layer 61R. The photosensitive resin layer 61G is formed by the same method as the method of forming the photosensitive resin layer 61R.

[0161] In the next step S122, the photosensitive resin layer 61G is patterned to form Figure 9B The photosensitive resin pattern 62G is shown. The opening 62GA is formed in the photosensitive resin pattern 62G. The opening 62GA is disposed on the first pixel electrode 32G. The planar shape of the opening 62GA is larger than the planar shape of the first pixel electrode 32G. Therefore, the photosensitive resin pattern 62G is not formed on the outer peripheral portion of the first pixel electrode 32G. The photosensitive resin layer 61G is patterned by photolithography. The photosensitive resin layer 61G is patterned by irradiating a portion of the photosensitive resin layer 61G with a mask 63G shown Figure 9A The mask 63G for patterning shown is used to irradiate a portion of the photosensitive resin layer 61G with a light R and dissolve the portion irradiated with the light R in a developing solution, thereby being patterned.

[0162] In the next step S123, the first light emitting layer 34G is formed on the first pixel electrode 32G and the photosensitive resin pattern 62G. Figure 9CThe light emitting material layer 64G is shown. The light emitting material layer 64G is formed in a manner of covering the entire pixel electrode 32G and the photosensitive resin pattern 62G. The light emitting material layer 64G is formed by the same method as that of forming the light emitting material layer 64R.

[0163] In the next step S124, the first peeled portion 65G shown in FIG. 17 as a part of the photosensitive resin pattern 62G is dissolved in the developer, and the second peeled portion 66G shown in FIG. 17 as a part of the light emitting material layer 64G is peeled, thereby forming the first light emitting layer 34G from the light emitting material layer 64G. Figure 9C In the next step S124, the first peeled portion 65G shown in FIG. 17 as a part of the photosensitive resin pattern 62G is dissolved in the developer, and the second peeled portion 66G shown in FIG. 17 as a part of the light emitting material layer 64G is peeled, thereby forming the first light emitting layer 34G from the light emitting material layer 64G. Figure 9D The first light emitting layer 34G shown in FIG. 17 is formed. The first peeled portion 65G and the second peeled portion 66G are dissolved in the developer by irradiating the photosensitive resin pattern 62G with the photosensitive light R via the mask 67G shown in FIG. 17. Figure 9C The mask 67G shown in FIG. 17 is used to irradiate a part of the photosensitive resin pattern 62G and dissolve the part irradiated with the photosensitive light R in the developer, thereby being peeled. The area irradiated with the photosensitive light R is other than the area where the first pixel electrode 32G is arranged. When the photosensitive light R is irradiated to a part of the photosensitive resin pattern 62G, the photosensitive light R can be irradiated to the contact hole portion where the contact holes 21BC, 21GC, and 21RC are formed.

[0164] 1.10 Flatness of outer peripheral portion of first light emitting layer

[0165] Figure 10A is a schematic enlarged sectional view illustrating the vicinity of the outer peripheral portion of the first pixel electrode 32B and the first light emitting layer 34B included in the display device 8 of the reference example. Figure 10B is a schematic enlarged plan view illustrating the vicinity of the outer peripheral portion of the first pixel electrode 32B and the first light emitting layer 34B included in the display device 8 of the reference example. Figure 11A is a schematic enlarged sectional view illustrating the vicinity of the outer peripheral portion of the first pixel electrode 32B and the first light emitting layer 34B included in the display device 1 of the first embodiment. Figure 11B is a schematic enlarged sectional view illustrating the vicinity of the outer peripheral portion of the first pixel electrode 32B and the first light emitting layer 34B included in the display device 1 of the first embodiment.

[0166] In the next step S124, the first peeled portion 65G shown in FIG. 17 as a part of the photosensitive resin pattern 62G is dissolved in the developer, and the second peeled portion 66G shown in FIG. 17 as a part of the light emitting material layer 64G is peeled, thereby forming the first light emitting layer 34G from the light emitting material layer 64G. Figure 10A and Figure 10BIn the display device 8 of the illustrated reference example, the first light emitting layer 34B is formed by the peeling-off process of forming the structure 53 before forming the first light emitting layer 34. Thus, the outer peripheral portion of the first light emitting layer 34B is formed on the slope included in the upper surface of the structure 53. In the display device 8, a light emitting region 71B in which blue light emitted by the first light emitting layer 34B is visually recognized is formed inside the structure 53. The light emitting region 71B is constituted by a film thickness uneven region 72B along the structure 53 and a film thickness uniform region 73B inside the film thickness uneven region 72B. In the film thickness uneven region 72B, the outer peripheral portion of the light emitting layer 34B is formed on the slope, and thus the light emitting layer 34B has an uneven film thickness. Thus, the film thickness uneven region 72B becomes a light emission failure region, and unevenness in the intensity of light occurs within the light emitting region 71B. In the film thickness uniform region 73B, the light emitting layer 34B has a uniform film thickness. Thus, the film thickness uniform region 73B becomes a uniform light emitting region.

[0167] Figure 11A and Figure 11B In the display device 1 of the first embodiment, the first light emitting layer 34B is formed by the above-described peeling-off process. Thus, the outer peripheral portion of the first light emitting layer 34B is formed under the structure 53. In the display device 1, a light emitting region 71B in which blue light emitted by the light emitting layer 34B is visually recognized is formed inside the structure 53. The light emitting region 71B is constituted by the film thickness uniform region 73B. In the film thickness uniform region 73B, the light emitting layer 34B has a uniform film thickness.

[0168] As Figure 10A , Figure 10B , Figure 11A and Figure 11B In the display device 1, the film thickness uniform region (uniform light emitting region) 73B is wider than in the display device 8. Thus, in the display device 1, the unevenness in the intensity of light emitted by the sub-pixel 21B is less than in the display device 8, and the light emission intensity of the sub-pixel 21B is stronger than in the display device 8.

[0169] Further, in the display device 8, since the outer peripheral portion of the first light emitting layer 34B is not covered by the structure 53, peeling-off 34BA of the first light emitting layer 34B is likely to occur. In contrast, in the display device 1, since the outer peripheral portion of the first light emitting layer 34B is covered by the structure 53, peeling-off 34BA of the light emitting layer 34B is less likely to occur.

[0170] The sub-pixel 21G is also the same as the sub-pixel 21B.

[0171] Figure 12A is a plan view schematically illustrating a light emission state of the sub-pixel 21B in a display device not having the structure 53. Figure 12BIt is a top view schematically illustrating the light-emitting state of sub-pixel 21B in a display device having a structure 53 and the outer periphery of a first light-emitting layer 34B disposed on the structure 53. Figure 12C This is a schematic top view illustrating the light-emitting state of a sub-pixel 21B in a display device having a structure 53 and with the outer periphery of a first light-emitting layer 34B disposed under the structure 53. Figure 12A , Figure 12B and Figure 12C In the diagram, a high proportion of black indicates weak luminous intensity.

[0172] In display devices that do not have structure 53, such as Figure 12A As shown, the light emission state of the first light-emitting layer 34B is not uniform. The light emitted from the first light-emitting layer 34B is enhanced in the region near the outer periphery of the first light-emitting layer 34B and weakened in the region away from the outer periphery of the first light-emitting layer 34B. This occurs because an electric field concentration is caused at the outer periphery of the pixel electrode, resulting in a larger current flowing into the outer periphery of the pixel electrode.

[0173] For example, in such Figure 10A In the display device shown, which includes a structure 53 and has the outer periphery of the first light-emitting layer 34B disposed on the structure 53, such as Figure 12B As shown, the light emission state of the first light-emitting layer 34B is uneven. The light emitted from the first light-emitting layer 34B weakens in the region near the outer periphery of the first light-emitting layer 34B and strengthens in the region away from the outer periphery of the first light-emitting layer 34B. This occurs because the thickness of the first light-emitting layer 34B increases at the outer periphery of the pixel electrode 32B, resulting in a smaller current flowing into the outer periphery of the pixel electrode 32B.

[0174] In a display device such as the display device 1 of the first embodiment, which has a structure 53 and the outer periphery of the first light-emitting layer 34B and the pixel electrode 32B disposed under the structure 53, Figure 12C As shown, the light emission state of the first light-emitting layer 34B is uniform. That is, in the display device 1 where the outer periphery of the first light-emitting layer 34B and the pixel electrode 32B is disposed under the structure 53, by disposing the structure 53 in a manner that covers the outer periphery of the pixel electrode 32B, it is possible to prevent the electric field from concentrating on the outer periphery of the pixel electrode 32B, and to make the thickness of the light-emitting area of ​​the first light-emitting layer 34B uniform, thus suppressing the formation of electric field concentration. Figure 12A as well as Figure 12B The uneven light emission state shown is as depicted.

[0175] Subpixel 21G is the same as subpixel 21B.

[0176] 1.11 Variation Example

[0177] Figure 13A andFigure 13B is a cross-sectional view schematically illustrating an intermediate product of a display device of a modification of the first embodiment.

[0178] In the manufacturing method of the display device 1 described above, as shown in Figure 5C , when the photosensitive rays R are irradiated to a part of the photosensitive resin pattern 62R, the photosensitive rays R are irradiated to the first peeling portion 65R, and the photosensitive rays R are not irradiated to the structure portions 51P, 52P, and 53P.

[0179] However, as shown in Fig. 13, the photosensitive rays R can be irradiated to the first peeling portion 65R and the structure portions 51P, 52P, and 53P. In this case, the amount of the photosensitive ray irradiation to the first peeling portion 65R is more than the amount of the photosensitive ray irradiation to the structure portions 51P, 52P, and 53P. The photosensitive rays R irradiated to the structure portions 51P, 52P, and 53P are performed via the semi-transmissive portions provided in the mask 67RM for the peeling process. Thereby, as shown in Figure 13B , it is possible to remove the portions of the light-emitting material layer 64R formed on the structure portions 51P, 52P, and 53P. Therefore, it is possible to remove the portions and the second peeling portion 66R at the same time by one peeling process.

[0180] 2 Second Embodiment

[0181] Hereinafter, aspects different from the first embodiment will be described with respect to the second embodiment. With respect to aspects not described, the same configuration as that adopted in the first embodiment is adopted in the second embodiment.

[0182] Figure 14 is a cross-sectional view schematically illustrating each pixel 11 provided in the display device 2 of the second embodiment.

[0183] As shown in Figure 14 , the display device 2 further has other structure 81, 82, and 83, and has the second charge transport layer 33 instead of the second charge transport layers 33B, 33G, and 33R.

[0184] The other structures 81, 82, and 83 are arranged below the structures 51, 52, and 53, i.e., on the side of the main surface 31S of the substrate 31.

[0185] The other structure 81 spans over the outer peripheral portion of the first pixel electrode 32B, between the first pixel electrode 32B and the first pixel electrode 32G, and over the outer peripheral portion of the first pixel electrode 32G. Thus, the other structure 81 includes an edge cover portion 81B disposed over the outer peripheral portion of the first pixel electrode 32B, a pixel boundary portion 81i disposed between the first pixel electrode 32B and the first pixel electrode 32G, and an edge cover portion 81G disposed over the outer peripheral portion of the first pixel electrode 32G.

[0186] The other structure 82 spans over the outer peripheral portion of the first pixel electrode 32G, between the first pixel electrode 32G and the second pixel electrode 32R, and over the outer peripheral portion of the second pixel electrode 32R. Thus, the other structure 82 includes an edge cover portion 82G disposed over the outer peripheral portion of the first pixel electrode 32G, a pixel boundary portion 82i disposed between the first pixel electrode 32G and the second pixel electrode 32R, and an edge cover portion 82R disposed over the outer peripheral portion of the second pixel electrode 32R.

[0187] The other structure 83 spans over the outer peripheral portion of the first pixel electrode 32B, between the first pixel electrode 32B and the second pixel electrode 32R, and over the outer peripheral portion of the second pixel electrode 32R. Thus, the other structure 83 includes an edge cover portion 83B disposed over the outer peripheral portion of the first pixel electrode 32B, a pixel boundary portion 83i disposed between the first pixel electrode 32B and the second pixel electrode 32R, and an edge cover portion 83R disposed over the outer peripheral portion of the second pixel electrode 32R.

[0188] The second charge transport layer 33 is not patterned. Thus, the second charge transport layer 33 is disposed throughout the respective entirety of the sub-pixels 21B, 21G, and 21R, and continuously spans the sub-pixels 21B, 21G, and 21R.

[0189] The second charge transport layer 33 spans over the first pixel electrode 32B, over the other structure 81, over the first pixel electrode 32G, over the other structure 82, over the second pixel electrode 32R, and over the other structure 83.

[0190] The structures 51, 52, and 53 are disposed over the other structures 81, 82, and 83, respectively.

[0191] The outer peripheral portion of the first light-emitting layer 34B is disposed under the structures 51 and 53. The outer peripheral portion of the first light-emitting layer 34G is disposed under the structures 51 and 52. In contrast, the outer peripheral portion of the second light-emitting layer 34R is disposed over the structures 52 and 53.

[0192] The portions of the first charge transport layer 35 and the second charge transport layer 33 belonging to the sub-pixels 21B, 21G, and 21R are separated from each other because the distance between the pixel electrodes 32B, 32G, and 32R is larger than the distance between each of the pixel electrodes 32B, 32G, and 32R and the common electrode 36, and there is no portion where the first charge transport layer 35 and the second charge transport layer 33 directly contact each other. Thus, crosstalk between the sub-pixels 21B, 21G, and 21R can be suppressed.

[0193] Figure 15 is a flowchart showing a manufacturing flow of the display device 2 of the second embodiment.

[0194] As shown in Figure 15 , the manufacturing method of the display device 2 further includes a step S212 in addition to the steps S101 to S111.

[0195] The step S212 is performed after the first pixel electrodes 32B and 32G and the second pixel electrode 32R are formed in the step S102 and before the second charge transport layer 33 is formed in the step S103. In the step S212, the other structures 81, 82, and 83 are formed. The other structures 81, 82, and 83 are formed by forming a photosensitive resin layer and patterning the formed photosensitive resin layer.

[0196] 3 Third Embodiment

[0197] Hereinafter, aspects of the third embodiment that are different from the first embodiment will be described. As for aspects not described, the same configurations as those employed in the first embodiment are employed in the third embodiment.

[0198] Figure 16 is a cross-sectional view schematically showing each pixel 11 included in the display device 3 of the third embodiment.

[0199] As shown in Figure 16 , the display device 3 further includes the charge injection layers 37B, 37G, and 37R and includes the second charge transport layer 33 in place of the second charge transport layers 33B, 33G, and 33R.

[0200] The charge injection layers 37B, 37G, and 37R are respectively disposed on the first pixel electrode 32B, the first pixel electrode 32G, and the second pixel electrode 32R and are disposed under the second charge transport layer 33. Thus, the charge injection layer 37B is disposed between the first pixel electrode 32B and the second charge transport layer 33. In addition, the charge injection layer 37G is disposed between the first pixel electrode 32G and the second charge transport layer 33. In addition, the charge injection layer 37R is disposed between the second pixel electrode 32R and the second charge transport layer 33.

[0201] The charge injection layers 37B, 37G, and 37R have the same planar shape as the planar shape of the first pixel electrode 32B, the first pixel electrode 32G, and the second pixel electrode 32R.

[0202] The second charge transport layer 33 is not patterned. Therefore, the second charge transport layer 33 is disposed throughout the respective entireties of the subpixels 21B, 21G, and 21R, and continuously across the subpixels 21B, 21G, and 21R. Thereby, peeling of the second charge transport layer 33, defects of the outer peripheral portions, and the like can be suppressed, and the subpixels 21B, 21G, and 21R can be caused to emit light uniformly.

[0203] Figure 17 is a flowchart showing a manufacturing flow of the display device 3 of the third embodiment.

[0204] As shown in Figure 17 , the manufacturing method of the display device 3 further includes a step S313 on the basis of the steps S101 to S111.

[0205] The step S313 is executed after the first pixel electrodes 32B and 32G and the second pixel electrode 32R are formed in the step S102 and before the second charge transport layer 33 is formed in the step S103. In the step S313, the charge injection layers 37B, 37G, and 37R are formed. In the step S313, the layers composed of the charge injection material are patterned by mask vapor deposition, an etching method using a photoresist as a mask, or the like, and the charge injection layers 37B, 37G, and 37R are formed.

[0206] 4Fourth Embodiment

[0207] Hereinafter, aspects in which the fourth embodiment differs from the first embodiment will be described. With respect to aspects not described, the same configurations as those employed in the first embodiment are employed in the fourth embodiment.

[0208] Figure 18 is a cross-sectional view schematically showing each pixel 11 included in the display device 4 of the fourth embodiment.

[0209] As shown in Figure 18 , the first light emitting layer 34G is disposed across the charge transport layer 33G and the outer peripheral portion of the first light emitting layer 34B. Therefore, the first light emitting layer 34G covers the outer peripheral portion of the first light emitting layer 34B. The first light emitting layer 34G covers the entire circumference of the outer peripheral portion of the first light emitting layer 34B. Thereby, the outer peripheral portion of the first light emitting layer 34B is difficult to peel. In addition, the first light emitting layers 34B and 34G are continuous. Thereby, the first light emitting layers 34B and 34G are difficult to peel. The entire circumference of the outer peripheral portion of the first light emitting layer 34B coincides with the structure 51 and the structure 53.

[0210] Figure 4 This is also a flowchart illustrating the manufacturing process of the display device 4 according to the fourth embodiment. Figures 19A to 19D This is a schematic cross-sectional view of an intermediate product of the display device 4 according to the fourth embodiment.

[0211] In process S101, preparation Figure 19A The substrate 31 shown.

[0212] In the next step S102, the following steps are formed. Figure 19A The first pixel electrodes 32B and 32G and the second pixel electrode 32R are shown.

[0213] In the next step S103, the following steps are formed. Figure 19A The second charge transport layers 33B, 33G, and 33R are shown.

[0214] In the next step S104, the following steps are formed. Figure 19A The first light-emitting layers 34B and 34G are shown.

[0215] In process S105, a process is formed Figure 19A The photosensitive resin layer 61R shown is shown.

[0216] In the next step S106, the photosensitive resin layer 61R is patterned by development to form Figure 19B The photosensitive resin pattern 62R shown is shown.

[0217] In the next process S107, the following steps are formed. Figure 19C The luminescent material layer 64R is shown.

[0218] In the next step S108, the first stripped portion 65R is dissolved in the developer, and the second stripped portion 66R is stripped off, thereby forming the luminescent material layer 64R. Figure 19D The second light-emitting layer 34R is shown. The area illuminated by the light-sensitive light R is the area excluding the area where the second pixel electrode 32R is disposed, the area between the first pixel electrode 32B and the first pixel electrode 32G, the area between the first pixel electrode 32G and the second pixel electrode 32R, and the area between the first pixel electrode 32B and the second pixel electrode 32R.

[0219] In step S108, when the first peeled portion 65R is dissolved in the developing solution and the second peeled portion 66R is peeled off, the entire circumference of the outer periphery of the first light-emitting layer 34B is covered by the first light-emitting layer 34G, and the first light-emitting layers 34B and 34G are continuous. Therefore, it is difficult to cause the peeling of the first light-emitting layers 34B and 34G.

[0220] Figure 7is a flowchart showing the procedure of forming the first light emitting layer 34B provided to the display device 4 of the fourth embodiment by peeling. Figures 20A to 20D is a cross-sectional view schematically illustrating an intermediate product of the display device 4 of the fourth embodiment.

[0221] In the process S121, the photosensitive resin layer 61B illustrated in Figure 20A is formed.

[0222] In the subsequent process S122, the photosensitive resin layer 61B is patterned to form the photosensitive resin pattern 62B illustrated in Figure 20B In the fourth embodiment, the opening disposed between the sub-pixel 21G and the sub-pixel 21R is formed in the photosensitive resin pattern 62B.

[0223] In the subsequent process S123, the light emitting material layer 64B illustrated in Figure 20C is formed.

[0224] In the subsequent process S124, the first peeled portion 65B is dissolved in a developing solution, and the second peeled portion 66B is peeled, so that the first light emitting layer 34B illustrated in Figure 20D is formed from the light emitting material layer 64B. In the process S124, the region irradiated with the photosensitive ray R is a region other than the region in which the first pixel electrode 32B is disposed.

[0225] Figure 7 is a flowchart showing the procedure of forming the first light emitting layer 34G provided to the display device 4 of the fourth embodiment by peeling. Figures 21A to 21D is a cross-sectional view schematically illustrating an intermediate product of the display device 4 of the fourth embodiment.

[0226] In the process S121, the photosensitive resin layer 61G illustrated in Figure 21A is formed.

[0227] In the subsequent process S122, the photosensitive resin layer 61G is patterned to form the photosensitive resin pattern 62G illustrated in Figure 21B In the fourth embodiment, the opening disposed between the sub-pixel 21B and the sub-pixel 21R is formed in the photosensitive resin pattern 62G.

[0228] In the subsequent process S123, the light emitting material layer 64G illustrated in Figure 21C is formed.

[0229] In the subsequent process S124, the first peeled portion 65G is dissolved in a developing solution, and the second peeled portion 66G is peeled, so that the first light emitting layer 34G illustrated in Figure 21DThe first light-emitting layer 34G is shown. In the process S124, the region irradiated with the light-sensing line R is a region other than the region in which the first pixel electrode 32G is disposed.

[0230] Figure 22 is a plan view schematically illustrating the planar shape of the first light-emitting layer 34B included in the display device 4 of the fourth embodiment. Figure 23A is a plan view schematically illustrating the planar shape of the first light-emitting layer 34B included in the display device 4 of the fourth embodiment. Figure 23B is a plan view schematically illustrating the planar shape of the first light-emitting layer 34G included in the display device 4 of the fourth embodiment. Figure 23C is a plan view schematically illustrating the planar shape of the second light-emitting layer 34R included in the display device 4 of the fourth embodiment.

[0231] As shown in Figure 22 , in the display device 4, a plurality of the sub-pixels 21B are arranged in a straight line in the first direction D1 to constitute a sub-pixel column 91B. In addition, a plurality of the sub-pixels 21G are arranged in a straight line in the first direction D1 to constitute a sub-pixel column 91G. In addition, a plurality of the sub-pixels 21R are arranged in a straight line in the first direction D1 to constitute a sub-pixel column 91R. The sub-pixel columns 91B, 91G, and 91R are arranged in a second direction D2 perpendicular to the first direction D1.

[0232] In the first light-emitting layer 34B, when the first peeled portion 65B is dissolved in the developing solution and the second peeled portion 66B is peeled in the process S124, a plurality of opening portions 34BB are formed. In the first light-emitting layer 34G, when the first peeled portion 65G is dissolved in the developing solution and the second peeled portion 66G is peeled in the process S124, a plurality of opening portions 34GB are formed. In the second light-emitting layer 34R, when the first peeled portion 65R is dissolved in the developing solution and the second peeled portion 66R is peeled in the process S108, a plurality of opening portions 34RB are formed.

[0233] The plurality of opening portions 34BB are formed in a range in which the first pixel electrode 32G and the second pixel electrode 32R are disposed. Therefore, the first light-emitting layer 34B does not cover the first pixel electrode 32G and the second pixel electrode 32R. The plurality of opening portions 34GB are formed in a range in which the first pixel electrode 32B and the second pixel electrode 32R are disposed. Therefore, the first light-emitting layer 34G does not cover the first pixel electrode 32B and the second pixel electrode 32R. The plurality of opening portions 34RB are formed in a range in which the first pixel electrodes 32B and 32G are disposed. Therefore, the first light-emitting layer 34B does not cover the first pixel electrodes 32B and 32G.

[0234] Each of the opening portions 34BB is isolated. Therefore, the first peeled portion 65B dissolved in the developer for forming each of the opening portions 34BB is also isolated. Therefore, it is easy to dissolve the first peeled portion 65B in the developer. Each of the opening portions 34GB is isolated. Therefore, the first peeled portion 65G dissolved in the developer for forming each of the opening portions 34GB is also isolated. Therefore, it is easy to dissolve the first peeled portion 65G in the developer. Each of the opening portions 34RB is isolated. Therefore, the first peeled portion 65R dissolved in the developer for forming each of the opening portions 34RB is also isolated. Therefore, it is easy to dissolve the first peeled portion 65R in the developer.

[0235] The first light emitting layers 34B and 34G and the second light emitting layer 34R do not have a convex portion that is a cause of easy peeling and peeling. Therefore, the first light emitting layers 34B and 34G and the second light emitting layer 34R have high resistance to peeling and peeling.

[0236] The first light emitting layers 34B and 34G and the second light emitting layer 34R are a continuous pattern in a planar shape. Thereby, it is possible to expand the contact area of the first light emitting layers 34B and 34G and the second light emitting layer 34R with the charge transport layer 35, and it is possible to make the charge transport layer 35 difficult to peel.

[0237] When the light emitting layer is an isolated pattern in an island shape having a rectangular shape in plan view, each corner of the light emitting layer is exposed to the processing step in a range of an angle of 270° of the outer angle. Therefore, in an isolated pattern having a rectangular shape or the like and having a corner in plan view, for example, each corner becomes a convex portion that forms an angle of an inner angle of less than 180°, and peeling easily occurs at the corner. However, since the first light emitting layers 34B and 34G and the second light emitting layer 34R are a continuous pattern in a planar shape, the corners of the first light emitting layers 34B and 34G and the second light emitting layer 34R are merely exposed to the processing step in a range of an angle of 90° of the inner angle. Therefore, the first light emitting layers 34B and 34G and the second light emitting layer 34R do not have a convex portion, and peeling does not easily occur at the corner.

[0238] 5Fifth Embodiment

[0239] Hereinafter, aspects in which the fifth embodiment differs from the first embodiment will be described. As for aspects not described, the same configuration as that employed in the first embodiment is employed in the fifth embodiment.

[0240] Figure 24 is a cross-sectional view schematically illustrating each pixel 11 included in the display device 5 of the fifth embodiment.

[0241] The upper surface 51U of the structure 51 includes a first slope 51A and a second slope 51B. The first slope 51A is disposed near the first pixel electrode 32B and has a first inclination. The second slope 51B is disposed near the first pixel electrode 32G and has a first inclination.

[0242] The upper surface 52U of the structure 52 includes a first slope 52A and a second slope 52B. The first slope 52A is disposed near the first pixel electrode 32G and has a first inclination. The second slope 52B is disposed near the second pixel electrode 32R and has a first inclination.

[0243] The upper surface 53U of the structure 53 includes a first slope 53A and a second slope 53B. The first slope 53A is disposed near the first pixel electrode 32B and has a first inclination. The second slope 53B is disposed near the second pixel electrode 32R and has a first inclination.

[0244] The second inclination is gentler than the first inclination.

[0245] The outer peripheral portion of the second light emitting layer 34R is disposed on the second slopes 52B and 53B having the gentle second inclination. Therefore, the second light emitting layer 34R can be formed in such a manner that the thickness of the second light emitting layer 34R is maintained uniform until the boundary of the structures 52 and 53.

[0246] The opening portion of the photosensitive resin pattern of the sub-pixel 21B is sandwiched by the first slope 51A and the first slope 53A having the steep first inclination. Thereby, the opening portion of the sub-pixel 21B can be enlarged to increase the aperture ratio of the sub-pixel 21B while maintaining the height of the structures 51 and 53 and maintaining the insulation of the outer peripheral portion of the sub-pixel 21B. The first inclination is, for example, 20° to 30°. Thereby, the height of the structures 51 and 53 can be maintained at 100 nm or more to ensure the insulation of the structures 51 and 53, and the range in which the first slope 51A and the first slope 53A exist can be reduced, and the aperture ratio of the sub-pixel 21B can be increased.

[0247] The opening portion of the sub-pixel 21G is sandwiched by the second slope 51B and the first slope 52A having the steep first inclination. Thereby, the opening portion of the sub-pixel 21G can be enlarged to increase the aperture ratio of the sub-pixel 21G while maintaining the height of the structures 51 and 52 and maintaining the insulation of the outer peripheral portion of the sub-pixel 21G. The first inclination is, for example, 20° to 40°. Thereby, the height of the structures 51 and 52 can be maintained at 100 nm or more to ensure the insulation of the structures 51 and 52, and the range in which the second slope 51B and the first slope 52A exist can be reduced, and the aperture ratio of the sub-pixel 21G can be increased.

[0248] Figure 4This is also a flowchart illustrating the manufacturing process of the display device 5 according to the fifth embodiment. Figures 25A to 25D This is a schematic cross-sectional view of an intermediate product of the display device 5 according to the fifth embodiment.

[0249] From step S101 to step S105, similarly to the first embodiment, preparation is carried out. Figure 25A The substrate 31 shown is formed Figure 25A The first pixel electrodes 32B and 32G, the second pixel electrode 32R, the second charge transport layers 33B, 33G and 33R, the first light-emitting layers 34B and 34G, and the photosensitive resin layer 61R are shown.

[0250] In the next step S106, the photosensitive resin layer 61R is patterned by development to form Figure 25B The photosensitive resin pattern 62R is shown. In order to form an opening between the second inclined plane 52B and the second inclined plane 53B with a gentle second slope, a photosensitive light beam R with low parallelism and diffusion is irradiated onto the photosensitive resin layer 61R. When the photosensitive light beam R with low parallelism and diffusion irradiates the photosensitive resin layer 61R, a portion of the light beam R also wraps around the light-shielding portion around the opening of the exposure mask, and the photosensitive resin layer 61R below the light-shielding portion around the opening of the exposure mask is also slightly photosensitive, thus forming the second inclined plane 52B and the second inclined plane 53B with a gentle second slope. The exposure amount of the photosensitive resin layer 61R can also be greater than the usual exposure amount. When the exposure amount is increased, a portion of the light beam R also wraps around the light-shielding portion around the opening of the exposure mask, and the photosensitive resin layer 61R below the light-shielding portion around the opening of the exposure mask is also slightly photosensitive, thus forming the second inclined plane 52B and the second inclined plane 53B with a gentle second slope. The second inclination is, for example, 5° to 30°.

[0251] In the next process S107, the following steps are formed. Figure 25C The luminescent material layer 64R is shown. The luminescent material layer 64R is formed on the second charge transport layer 33R and on the second inclined surfaces 52B and 53B with a gentle second inclination. When the inclination of the inclined surfaces of the structure portion is steep, the luminescent material coated on the inclined surfaces flows into the luminescent area, and the thickness of the luminescent material layer in the luminescent area easily becomes uneven. However, when the luminescent material is coated on the second inclined surfaces 52B and 53B with a gentle second inclination, the luminescent material is less likely to flow into the luminescent area, and the thickness of the luminescent material layer 64R is maintained uniformly up to the boundary between the structure portions 52P and 53P. That is, it is possible to suppress the uneven thickness of the luminescent material layer 64R near the boundary between the structure portions 52P and 53P.

[0252] In the next step S108, the first peeled portion 65R and the second peeled portion 66R are peeled by development, so that the light emitting material layer 64R is formed Figure 25D The light sensitive line R having high parallelism is irradiated to the photosensitive resin pattern 62R at this time. The region irradiated by the light sensitive line R is a region other than the region in which the second pixel electrode 32R is arranged, the region between the first pixel electrode 32B and the first pixel electrode 32G, the region between the first pixel electrode 32G and the second pixel electrode 32R, and the region between the second pixel electrode 32R and the first pixel electrode 32B.

[0253] In the next steps S109 to S111, similarly to the first embodiment, the structures 51Q, 52Q, and 53Q are post-baked, so that the first charge transport layer 35 and the counter electrode 36 illustrated in FIG. 1 are formed. Figure 24

[0254] Figure 26A FIG. 6 is a schematic enlarged sectional view illustrating the vicinity of the outer periphery of the second pixel electrode 32R included in the display device 10 of the reference example. Figure 26B FIG. 7 is a schematic enlarged plan view illustrating the vicinity of the outer periphery of the second pixel electrode 32R included in the display device 10 of the reference example. Figure 27A FIG. 8 is a schematic enlarged sectional view illustrating the vicinity of the outer periphery of the second pixel electrode 32R included in the display device 5 of the fifth embodiment. Figure 27B FIG. 9 is a schematic enlarged plan view illustrating the vicinity of the outer periphery of the second pixel electrode 32R included in the display device 5 of the fifth embodiment.

[0255] In the display device 10 of the reference example illustrated in FIG. 1, the second inclined surface 52B is a steep inclined surface. Therefore, the liquid pool 95 along the structure 52 is formed along the second light emitting layer 34R. In the display device 10, the light emitting region 71R in which red light emitted from the second light emitting layer 34R is visually recognized is formed on the inner side of the structure 52. The light emitting region 71R is constituted by the film thickness uneven region 72R along the structure 52 and the film thickness uniform region 73R on the inner side of the film thickness uneven region 72R. In the film thickness uneven region 72R, the light emitting layer 34R has an uneven film thickness due to the influence of the formation of the liquid pool 95 in the second light emitting layer 34R. Therefore, the film thickness uneven region 72R becomes a light emission defective region. In the film thickness uniform region 73R, the light emitting layer 34R has a uniform film thickness. Therefore, the film thickness uniform region 73R becomes a uniform light emission region. Figure 26A Figure 26B In the display device 10 of the reference example illustrated in FIG. 1, the second inclined surface 52B is a steep inclined surface. Therefore, the liquid pool 95 along the structure 52 is formed along the second light emitting layer 34R. In the display device 10, the light emitting region 71R in which red light emitted from the second light emitting layer 34R is visually recognized is formed on the inner side of the structure 52. The light emitting region 71R is constituted by the film thickness uneven region 72R along the structure 52 and the film thickness uniform region 73R on the inner side of the film thickness uneven region 72R. In the film thickness uneven region 72R, the light emitting layer 34R has an uneven film thickness due to the influence of the formation of the liquid pool 95 in the second light emitting layer 34R. Therefore, the film thickness uneven region 72R becomes a light emission defective region. In the film thickness uniform region 73R, the light emitting layer 34R has a uniform film thickness. Therefore, the film thickness uniform region 73R becomes a uniform light emission region.

[0256] In the display device 10 of the reference example illustrated in FIG. 1, the second inclined surface 52B is a steep inclined surface. Therefore, the liquid pool 95 along the structure 52 is formed along the second light emitting layer 34R. In the display device 10, the light emitting region 71R in which red light emitted from the second light emitting layer 34R is visually recognized is formed on the inner side of the structure 52. The light emitting region 71R is constituted by the film thickness uneven region 72R along the structure 52 and the film thickness uniform region 73R on the inner side of the film thickness uneven region 72R. In the film thickness uneven region 72R, the light emitting layer 34R has an uneven film thickness due to the influence of the formation of the liquid pool 95 in the second light emitting layer 34R. Therefore, the film thickness uneven region 72R becomes a light emission defective region. In the film thickness uniform region 73R, the light emitting layer 34R has a uniform film thickness. Therefore, the film thickness uniform region 73R becomes a uniform light emission region. Figure 27A Figure 27B ​​​In the display device 5 of the fifth embodiment shown, the second inclined surface 52B is a gentle inclined surface. Therefore, the liquid 95 accumulated along the structure 52 formed on the second light emitting layer 34R can reduce the area and thickness of the film thickness increased region of the second light emitting layer 34R. The liquid 95 referred to here is a region in which the film thickness of the second light emitting layer 34R is thickened in the vicinity of the root of the structure 52. In the display device 5, the light emitting region 71R in which the red light emitted by the second light emitting layer 34R is visually recognized is formed on the inner side of the structure 52. The light emitting region 71R is constituted by the film thickness uniform region 73R. In the film thickness uniform region 73R, the light emitting layer 34R has a uniform film thickness. Therefore, the film thickness uniform region 73R becomes a uniform light emitting region.

[0257] As Figure 26A , Figure 26B , Figure 27A and Figure 27B indicated, in the display device 5, the film thickness uniform region (uniform light emitting region) 73R is wider than in the display device 10. Therefore, in the display device 5, the red light emitted by the sub-pixel 21R is made stronger than in the display device 10, and the unevenness of the red light emitted by the sub-pixel 21R is reduced.

[0258] 6 Arrangement of sub-pixels

[0259] Figures 28A to 28D is a plan view schematically showing another example of the arrangement of the sub-pixels 21B, 21G and 21R employable in the first to fifth embodiments.

[0260] In Figure 28A the arrangement shown, the sub-pixels are arranged in a matrix of 3 rows and 3 columns. In the first and third columns, the sub-pixels 21R, 21G and 21R are arranged in the order described. In the second row, the sub-pixels 21G, 21B and 21G are arranged in the order described.

[0261] In Figure 28B the arrangement shown, the sub-pixels are arranged in a matrix of 2 rows and 4 columns. In the first row, the sub-pixels 21B, 21G, 21R and 21G are arranged in the order described. In the second row, the sub-pixels 21R, 21G, 21B and 21G are arranged in the order described.

[0262] In Figure 28C the arrangement shown, the sub-pixels are arranged in a matrix of 2 rows and 2 columns. In the first column, the sub-pixels 21B and 21G are arranged in the order described. In the second row, the sub-pixels 21G and 21R are arranged in the order described.

[0263] In Figure 28DIn the arrangement shown, the sub-pixels are arranged in 3 columns. In the first and third columns, the sub-pixels 21G, 21R, 21G, and 21R are arranged in the order described. In the second column, the sub-pixels 21B and 21B are arranged in the order described.

[0264] The present application is not limited to the above-described embodiments, and can be replaced with a configuration having substantially the same configuration as that shown in the above-described embodiments, a configuration achieving the same effects, or a configuration achieving the same purpose.

Claims

1. A method for manufacturing a display device, characterized by comprising: comprises: a process a) of forming a first pixel electrode and a second pixel electrode; a process b) of forming a first light-emitting layer over the first pixel electrode; a process c) of forming a photosensitive resin layer over the second pixel electrode and the first light-emitting layer; a process d) of patterning the photosensitive resin layer to form a photosensitive resin pattern, the photosensitive resin pattern having a structure part configured as a structure and having an opening formed over the second pixel electrode, the structure having at least one of an edge cover part formed over a peripheral part of the first light-emitting layer and a pixel boundary part formed between the first pixel electrode and the second pixel electrode; a process e) of forming a light-emitting material layer over the photosensitive resin pattern and an opening lower part, the opening lower part being at least a part of the second pixel electrode and being formed under the opening; and a process f) in which the structure is left, a first peeled part, which is a part of the photosensitive resin pattern and is formed over the first light-emitting layer, is dissolved in a developing solution, and a second peeled part, which is a part of the light-emitting material layer and is formed over the first peeled part, is peeled, and a second light-emitting layer, which is a part of the light-emitting material layer, is formed over the second pixel electrode.

2. The manufacturing method of a display device according to claim 1, wherein in the process e), the light-emitting material layer is formed so as to cover the entire photosensitive resin pattern and the opening lower part with the light-emitting material layer.

3. The manufacturing method of a display device according to claim 1 or 2, wherein the structure has the edge cover part.

4. The manufacturing method of a display device according to claim 1 or 2, wherein in the process f), the first peeled part and the second peeled part are peeled so that the structure is left as an edge cover over a peripheral part of the second pixel electrode.

5. The manufacturing method of a display device according to claim 1 or 2, further comprising a process g) of forming a charge transport layer over the second pixel electrode, in the process f), the first peeled part and the second peeled part are peeled so that the structure is left as an edge cover over a peripheral part of the charge transport layer.

6. The manufacturing method of a display device according to claim 1 or 2, wherein in the process b), the first light-emitting layer is formed so as to cover the entire first pixel electrode with the first light-emitting layer.

7. The manufacturing method of a display device according to claim 1 or 2, wherein the photosensitive resin layer includes a positive photosensitive resin.

8. The manufacturing method of a display device according to claim 1 or 2, wherein in the process f), the amount of light irradiation to the first peeled part is made larger than the amount of light irradiation to the structure part.

9. The manufacturing method of a display device according to claim 1 or 2, wherein ​ In the process f), the first peeled portion and the second peeled portion are peeled in such a manner that an upper surface of the structure includes a first slope and a second slope, the first slope is disposed near the first pixel electrode and has a first inclination, and the second slope is disposed near the second pixel electrode and has a second inclination which is gentler than the first inclination.

10. The method according to claim 1 or 2, wherein The process b) forms the first light-emitting layer by a peeling process.

11. The method according to claim 1 or 2, wherein The first light-emitting layer includes first quantum dots, The second light-emitting layer includes second quantum dots.

12. The method according to claim 11, wherein The first quantum dots have a larger particle size than the second quantum dots.

13. A method for manufacturing a display device according to claim 1 or 2, wherein Further comprising: A process h) of forming a counter electrode, the counter electrode opposing the first pixel electrode via the first light-emitting layer and opposing the second pixel electrode via the second light-emitting layer.

14. The method according to claim 13, wherein Before the process h), further comprising a process i) of forming a first charge transport layer, the first charge transport layer opposing the first pixel electrode via the first light-emitting layer and opposing the second pixel electrode via the second light-emitting layer.

15. The method according to claim 1 or 2, wherein Before the process b), further comprising a process j) of forming a second charge transport layer on the first pixel electrode and the second pixel electrode.

16. A method for manufacturing a display device according to claim 1 or 2, wherein Further comprising: A process k) of performing post-baking on the structure.

17. The method according to claim 1 or 2, wherein The process f) and the process k) are performed consecutively.

18. A display device comprising: Comprising: A substrate having a main surface; A first pixel electrode disposed on the main surface; A second pixel electrode disposed on the main surface adjacent to the first pixel electrode; A first light-emitting layer disposed on a side of the first pixel electrode opposite to a side on which the main surface is disposed; A second light-emitting layer disposed on a side of the second pixel electrode opposite to a side on which the main surface is disposed, an area of the second light-emitting layer on the first light-emitting layer being an opening; and A structure spanning over a peripheral portion of the first light-emitting layer and outside the peripheral portion of the first light-emitting layer, and including a first edge cover portion disposed on a peripheral portion of the second light-emitting layer on a side on which the main surface is disposed.

19. The display device according to claim 18, wherein The structure includes a second edge cover portion disposed on a peripheral portion of the second pixel electrode.

20. The display device according to claim 18 or 19, wherein ​ Further comprising a charge transport layer disposed on the second pixel electrode, The structure further includes a third edge cover portion disposed on the outer peripheral portion of the charge transport layer.

21. The display device according to claim 18 or 19, wherein The structure is composed of a cured product of a positive photosensitive resin.

22. The display device of claim 18 or 19, wherein, Further comprising: Another structure disposed on a side of the structure on which the main surface is disposed, and spanning over the outer peripheral portion of the first pixel electrode, between the first pixel electrode and the second pixel electrode, and over the outer peripheral portion of the second pixel electrode.

23. The display device according to claim 18 or 19, wherein The first light-emitting layer includes first quantum dots, The second light-emitting layer includes second quantum dots.

24. The display device according to claim 23, wherein The first quantum dots have a larger particle diameter than the second quantum dots.

25. The display device according to claim 23, wherein The first quantum dots have a shorter fluorescent lifetime than the second quantum dots.

26. The display device according to claim 23, wherein The first quantum dots emit green light.

27. The display device according to claim 23, wherein The first quantum dots emit green light, The second quantum dots emit red or blue light.

28. The display device according to claim 18, wherein The opening has a shape along the structure in plan view.

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