A laser element comprising a spin helix inductor layer

Abstract

The application discloses a laser element containing a spin helical inductor layer, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer; the active layer is adjacent to the lower waveguide layer, or a first spin helical inductor layer is arranged between the active layer and the lower waveguide layer; the active layer is adjacent to the upper waveguide layer, or a second spin helical inductor layer is arranged between the active layer and the upper waveguide layer; the first spin helical inductor layer and the second spin helical inductor layer are both three-dimensional topological core-shell structures. According to the application, the hole injection barrier is reduced, the hole injection efficiency is enhanced, meanwhile, the electron injection barrier of the active layer is improved, the electron overflow is reduced, the radiation recombination efficiency of the electron-hole wave function in the active layer is improved, the laser limiting factor is improved, the internal loss is reduced, and the laser emission power and the slope efficiency are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic devices, and more particularly to a laser element containing a spin-helical inductor layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Currently, nitride semiconductor lasers suffer from the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong QCSE quantum confinement Stark effect limits the improvement of laser electro-lasing gain; 2) High optical waveguide absorption loss, inherent carbon impurities in p-type semiconductors can compensate for acceptors and destroy p-type properties, p-type doping has low ionization rate, and a large number of unionized Mg acceptor impurities will lead to increased internal optical loss, and the laser's refractive index dispersion and confinement factor decrease with increasing wavelength, resulting in reduced laser mode gain; 3) p-type semiconductors... The Mg acceptor activation energy of the quantum well is large and the ionization efficiency is low. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility. In addition, the polarization electric field of the quantum well raises the hole injection barrier and causes holes to overflow from the active layer. The non-uniformity and low efficiency of hole injection lead to a severe asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization. Hole transport in the quantum well is more difficult, and the non-uniformity of carrier injection and gain also cause the laser gain spectrum to broaden and the peak gain to decrease, resulting in an increase in the laser threshold current and a decrease in slope efficiency. Summary of the Invention

[0004] This invention provides a laser element containing a spin-helical inductance layer. The spin-helical inductance layer forms a strong inductance in the laser element, thereby improving the optical power and slope efficiency of the laser element.

[0005] To achieve the above objectives, a first aspect of the present application provides a laser element containing a spin-helical inductor layer, comprising, from bottom to top: a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer;

[0006] The active layer and the lower waveguide layer are adjacent, or a first spin-helical inductor layer exists between the active layer and the lower waveguide layer; the active layer and the upper waveguide layer are adjacent, or a second spin-helical inductor layer exists between the active layer and the upper waveguide layer.

[0007] The active layer is a periodic structure consisting of three or fewer periodic layers. Each periodic layer includes a well layer and a barrier layer. When different periodic layers are spliced ​​together, a structure is formed in which the well layer and the barrier layer are adjacent.

[0008] Both the first spin-helical inductor layer and the second spin-helical inductor layer are three-dimensional core-shell topological structures.

[0009] In one possible implementation of the first aspect, the well layer comprises one or more components selected from InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInP, InGaAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN.

[0010] In one possible implementation of the first aspect, the barrier layer comprises one or more components selected from InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInP, InGaAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN.

[0011] In one possible implementation of the first aspect, the spin-helical inductor layer comprises one or more of the following components: Cd3Ru4Al12, CsV3Sb5, SrTiO3, KVsSb5, PbI2-WS2, and RbV3Sb5.

[0012] In one possible implementation of the first aspect, the lower confining layer comprises one or more components selected from InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, wherein the Si doping concentration ranges from 1E18 to 1E20 cm⁻¹. -3 .

[0013] In one possible implementation of the first aspect, the lower or upper waveguide layer comprises one or more components selected from InGaN, InN, GaN, Al InGaN, AlN, AlGaN, Al InN, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, Al InAs, Al InP, Al GaP, InGaP, SiC, Ga2O3, and BN, with the Si doping concentration ranging from 1E16 to 5E19 cm⁻¹. -3 .

[0014] In one possible implementation of the first aspect, the electron blocking layer and the upper confinement layer comprise one or more of the following: InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0015] In one possible implementation of the first aspect, the substrate comprises one or more of the following: sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, SiO2, SiNx magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2.

[0016] In one possible implementation of the first aspect, the binary core-shell structure of the spin-helical inductor layer includes the following: Cd3Ru4Al 12 / CsV3Sb5,Cd3Ru4Al 12 / SrTiO3,Cd3Ru4Al 12 / KVsSb5,Cd3Ru4Al 12 / PbI2-WS2,Cd3Ru4Al 12 / RbV3Sb5,CsV3Sb5 / SrTiO3,CsV3Sb5 / KVsSb5,CsV3Sb5 / Pb I2-WS2,CsV3Sb5 / RbV3Sb5,SrTiO3 / KVsSb5,SrTiO3 / Pb I2-WS2,SrTiO3 / RbV3Sb5,KVsSb5 / Pb I2-WS2,KVsSb5 / RbV3Sb5,Pb I2-WS2 / RbV3Sb5.

[0017] In one possible implementation of the first aspect, the ternary core-shell structure of the spin-helical inductor layer includes the following: Cd3Ru4Al 12 / CsV3Sb5 / SrTiO3,Cd3Ru4Al 12 / CsV3Sb5 / KVsSb5,Cd3Ru4Al 12 / CsV3Sb5 / Pb I2-WS2,Cd3Ru4Al 12 / CsV3Sb5 / RbV3Sb5,Cd3Ru4Al 12 / SrTiO3 / KVsSb5,Cd3Ru4Al 12 / SrTiO3 / PbI2-WS2,Cd3Ru4Al 12 / SrTiO3 / RbV3Sb5,Cd3Ru4Al 12 / KVsSb5 / Pb I2-WS2,Cd3Ru4Al 12 / KVsSb5 / RbV3Sb5,Cd3Ru4Al 12 / Pb I2-WS2 / RbV3Sb5,CsV3Sb5 / SrTiO3 / KVsSb5,CsV3Sb5 / SrTiO3 / Pb I2-WS2,CsV3Sb5 / SrTiO3 / RbV3Sb5,CsV3Sb5 / KVsSb5 / Pb I2-WS2,CsV3Sb5 / KVsSb5 / RbV3Sb5,CsV3Sb5 / Pb I2-WS2 / RbV3Sb5,SrTiO3 / KVsSb5 / Pb I2-WS2,SrTiO3 / KVsSb5 / RbV3Sb5,SrTiO3 / PbI2-WS2 / RbV3Sb5.

[0018] Compared to existing technologies, the present invention provides a laser element containing a spin-helical inductor layer. By improving the structure of the semiconductor laser element and adjusting the composition of each layer, a spin-helical inductor layer is added between the active layer and the upper waveguide layer and / or between the active layer and the lower waveguide layer. Each spin-helical inductor layer can increase the inductance to over -400 nH. By controlling the polarization field of the quantum well through the change of the inductor electromotive force, the quantum confinement Stark effect is reduced, the hole injection barrier is lowered, and the hole injection efficiency is enhanced. At the same time, the electron injection barrier of the active layer is increased, and electron overflow is reduced, thereby improving the radiative recombination efficiency of the electron-hole wave function in the active layer, increasing the laser confinement factor, reducing internal losses, and ensuring that the number of particles pumped to high energy levels is greater than the number of particles consumed by stimulated emission, thereby improving the lasing power and slope efficiency of the laser. Attached Figure Description

[0019] Figure 1This is a schematic diagram of the structure of a laser element containing a spin helical inductor layer according to an embodiment of the present invention. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] Please see Figure 1 An embodiment of the present invention provides a laser element containing a spin-helical inductor layer, comprising, from bottom to top: a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106.

[0022] The active layer 103 is adjacent to the lower waveguide layer 102, or a first spin-helical inductor layer 107 exists between the active layer 103 and the lower waveguide layer 102; the active layer 103 is adjacent to the upper waveguide layer 104, or a second spin-helical inductor layer 108 exists between the active layer 103 and the upper waveguide layer 104.

[0023] The active layer 103 is a periodic structure composed of three or fewer periodic layers. Each periodic layer includes a well layer and a barrier layer. When different periodic layers are spliced ​​together, a structure in which the well layer and the barrier layer are adjacent is formed.

[0024] Both the first spin-helical inductor layer 107 and the second spin-helical inductor layer are three-dimensional core-shell topological structures.

[0025] In this embodiment, a spin-helical inductor layer is introduced. The first spin-helical inductor layer 107 or the second spin-helical inductor layer 108 can increase the inductance to above -400nH, enhance the hole injection efficiency, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer 103, increase the confinement factor, reduce internal loss, achieve continuous oscillation, reduce the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0026] For example, the well layer includes one or more components selected from InGaN, InN, GaN, Al InGaN, AlN, AlGaN, Al InN, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, Al InAs, Al InP, Al GaP, InGaP, InGaP, SiC, Ga2O3, and BN.

[0027] In practical applications, the thickness of the well layer is typically 10–80 angstroms.

[0028] For example, the barrier layer includes one or more components selected from InGaN, InN, GaN, Al InGaN, AlN, AlGaN, Al InN, GaAs, GaP, InP, AlGaAs, Al InGaAs, Al GaInP, InGaAs, Al InAs, Al InP, Al GaP, InGaP, InGaP, SiC, Ga2O3, and BN.

[0029] In practical applications, the thickness of the barrier layer is typically 10 to 120 angstroms.

[0030] For example, the spin-helical inductor layer comprises Cd3Ru4Al 12 One or more of the following components: CsV3Sb5, SrTiO3, KVsSb5, PbI2-WS2, and RbV3Sb5.

[0031] Three-dimensional topological core-shell structures include unary core-shell structures, binary combined core-shell structures, ternary combined core-shell structures, quaternary combined core-shell structures, pentaneous combined core-shell structures, and hexane combined core-shell structures.

[0032] The unary core-shell structure includes the following: Cd3Ru4Al 12 , CsV3Sb5, SrTiO3, KVsSb5, Pb I2-WS2, RbV3Sb5;

[0033] Binary core-shell structures include the following: Cd3Ru4Al 12 / CsV3Sb5,Cd3Ru4Al 12 / SrTiO3,Cd3Ru4Al 12 / KVsSb5,Cd3Ru4Al 12 / Pb I2-WS2,Cd3Ru4Al 12 / RbV3Sb5,CsV3Sb5 / SrTiO3,CsV3Sb5 / KVsSb5,CsV3Sb5 / Pb I2-WS2,CsV3Sb5 / RbV3Sb5,SrT iO3 / KVsSb5,SrT iO3 / Pb I2-WS2,SrT iO3 / RbV3Sb5,KVsSb5 / Pb I2-WS2,KVsSb5 / RbV3Sb5,Pb I2-WS2 / RbV3Sb5.

[0034] Ternary core-shell structures include the following: Cd3Ru4Al 12 / CsV3Sb5 / SrTiO3, Cd3Ru4Al 12 / CsV3Sb5 / KVsSb5, Cd3Ru4Al 12 / CsV3Sb5 / PbI2-WS2, Cd3Ru4Al 12 / CsV3Sb5 / RbV3Sb5, Cd3Ru4Al 12 / SrTiO3 / KVsSb5, Cd3Ru4Al 12 / SrTiO3 / PbI2-WS2, Cd3Ru4Al 12 / SrTiO3 / RbV3Sb5, Cd3Ru4Al 12 / KVsSb5 / PbI2-WS2, Cd3Ru4Al 12 / KVsSb5 / RbV3Sb5, Cd3Ru4Al 12 / PbI2-WS2 / RbV3Sb5, CsV3Sb5 / SrTiO3 / KVsSb5, CsV3Sb5 / SrTiO3 / PbI2-WS2, CsV3Sb5 / SrTiO3 / RbV3Sb5, CsV3Sb5 / KVsSb5 / PbI2-WS2, CsV3Sb5 / KVsSb5 / RbV3Sb5, CsV3Sb5 / PbI2-WS2 / RbV3Sb5, SrTiO3 / KVsSb5 / PbI2-WS2, SrTiO3 / KVsSb5 / RbV3Sb5, SrTiO3 / PbI2-WS2 / RbV3Sb5。

[0035] The quaternary core-shell structures include the following: Cd3Ru4Al 12 / CsV3Sb5 / SrTiO3 / KVsSb5, Cd3Ru4Al 12 / CsV3Sb5 / SrTiO3 / PbI2-WS2, Cd3Ru4Al 12 / CsV3Sb5 / SrTiO3 / RbV3Sb5, Cd3Ru4Al 12 / SrTiO3 / KVsSb5 / PbI2-WS2, Cd3Ru4Al 12 / SrTiO3 / KVsSb5 / RbV3Sb5, Cd3Ru4Al 12 / KVsSb5 / Pb I2-WS2 / RbV3Sb5,CsV3Sb5 / SrT iO3 / KVsSb5 / Pb I2-WS2,CsV3Sb5 / SrT iO3 / KVsSb5 / RbV3Sb5,CsV3Sb5 / KVsSb5 / Pb I2-WS2 / RbV3Sb5,SrT iO3 / KVsSb5 / Pb I2-WS2 / RbV3Sb5.

[0036] Five-element core-shell structures include the following: Cd3Ru4Al 12 / CsV3Sb5 / SrT iO3 / KVsSb5 / Pb I2-WS2,Cd3Ru4A l 12 / CsV3Sb5 / SrT iO3 / KVsSb5 / RbV3Sb5,

[0037] Cd3Ru4Al 12 / CsV3Sb5 / SrT iO3 / Pb I2-WS2 / RbV3Sb5,

[0038] Cd3Ru4Al 12 / CsV3Sb5 / KVsSb5 / Pb I2-WS2 / RbV3Sb5,

[0039] Cd3Ru4Al 12 / SrT iO3 / KVsSb5 / Pb I2-WS2 / RbV3Sb5,

[0040] CsV3Sb5 / SrT iO3 / KVsSb5 / Pb I2-WS2 / RbV3Sb 5,5 .

[0041] There is only one type of six-membered core-shell structure: Cd3Ru4Al 12 / CsV3Sb5 / SrT iO3 / KVsSb5 / Pb I2-WS2 / RbV3Sb5.

[0042] For example, the lower confinement layer 101 includes one or more components selected from InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with the Si doping concentration ranging from 1E18 to 1E20 cm⁻¹. -3 .

[0043] In practical applications, the thickness of the lower confinement layer 101 is generally 50 to 1000 nm.

[0044] For example, the lower waveguide layer 102 or the upper waveguide layer 104 includes one or more components selected from InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with the Si doping concentration ranging from 1E16 to 5E19 cm⁻¹. -3 .

[0045] In practical applications, the thickness of the lower waveguide layer 102 or the upper waveguide layer 104 is generally 50 to 1000 nm.

[0046] For example, the electron blocking layer 105 and the upper confinement layer 106 include one or more components selected from InGaN, InN, GaN, Al InGaN, AlN, AlGaN, Al InN, GaAs, GaP, InP, AlGaAs, Al InGaAs, Al GaInP, InGaAs, AlInAs, Al InP, Al GaP, InGaP, SiC, Ga2O3, and BN, with a Mg doping concentration of 1E18 to 1E20 cm⁻¹. -3 .

[0047] In practical applications, the thickness of the electron blocking layer 105 and the upper confinement layer 106 is generally 20 to 1000 nm.

[0048] For example, the substrate 100 includes one or more of the following components: sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, SiO2, SiNx magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2.

[0049] Table 1 shows the experimental data of the laser elements in the above embodiments compared with those of conventional lasers. The spin-helical inductor layer, through the material and structural properties of the three-dimensional topological core-shell structure, forms a strong inductance in the laser. By controlling the change in the inductor electromotive force, it modulates the polarization field of the quantum well, reducing the quantum confinement Stark effect, lowering the hole injection barrier, and enhancing the hole injection efficiency. Simultaneously, it raises the electron injection barrier of the active layer 103, reducing electron overflow, thereby improving the radiative recombination efficiency of the electron-hole wave function in the active layer 103, increasing the laser confinement factor, reducing internal losses, and ensuring that the number of particles pumped to higher energy levels is greater than the number of particles consumed by stimulated emission, thus improving the laser's lasing power and slope efficiency.

[0050] Table 1 Comparison of Laser Source Component Parameters

[0051] Green Laser - Project Traditional lasers This application example uses a laser element. range of change Slope efficiency (W / A) 0.51 0.95 86％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.85 1.26 -56％ Optical power (W) 0.53 0.93 75％ Limiting factors 1.16％ 2.12％ 83％ <![CDATA[Internal optical loss (cm -1 )]]> 42.3 11.7 -72％

[0052] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A laser element containing a spin-helical inductor layer, characterized in that, From bottom to top, it includes: substrate, lower confinement layer, lower waveguide layer, active layer, upper waveguide layer, electron blocking layer, and upper confinement layer; A first spin-helical inductor layer is disposed between the active layer and the lower waveguide layer, and the active layer and the upper waveguide layer are adjacent; or a second spin-helical inductor layer is disposed between the active layer and the upper waveguide layer, and the active layer and the lower waveguide layer are adjacent; or a first spin-helical inductor layer is disposed between the active layer and the lower waveguide layer, and a second spin-helical inductor layer is disposed between the active layer and the upper waveguide layer. The active layer is a periodic structure consisting of three or fewer periodic layers. Each periodic layer includes a well layer and a barrier layer. When different periodic layers are spliced ​​together, a structure is formed in which the well layer and the barrier layer are adjacent. Both the first and second spin-helical inductor layers are three-dimensional core-shell topologies, and the spin-helical inductor layers comprise Cd3Ru4Al. 12 One of the following components: CsV3Sb5, SrTiO3, KVsSb5, PbI2-WS2, and RbV3Sb5.

2. The laser element containing a spin-helical inductor layer as described in claim 1, characterized in that, The well layer includes one of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN.

3. The laser element containing a spin-helical inductor layer as described in claim 1, characterized in that, The barrier layer includes one of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN.

4. The laser element containing a spin-helical inductor layer as described in claim 1, characterized in that, The lower confinement layer comprises one of the following: InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a Si doping concentration ranging from 1E18 to 1E20 cm⁻¹. -3 .

5. The laser element containing a spin-helical inductor layer as described in claim 1, characterized in that, The lower or upper waveguide layer comprises one of the following: InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a Si doping concentration ranging from 1E16 to 5E19. cm -3 。 6. The laser element containing a spin-helical inductor layer as described in claim 1, characterized in that, The electron blocking layer and the upper confinement layer comprise one of the following components: InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a Mg doping concentration of 1E18~1E20 cm⁻¹. -3 .

7. The laser element containing a spin-helical inductor layer as described in claim 1, characterized in that, The substrate comprises one of the following: sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, SiO2, SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2.

8. The laser element containing a spin-helical inductor layer as described in claim 4, characterized in that, The binary core-shell structure of the spin-helical inductor layer includes the following: Cd3Ru4Al 12 / CsV3Sb5,Cd3Ru4Al 12 / SrTiO3, Cd3Ru4Al 12 / KVsSb5,Cd3Ru4Al 12 / PbI2-WS2,Cd3Ru4Al 12 / RbV3Sb5,CsV3Sb5 / SrTiO3, CsV3Sb5 / KVsSb5,CsV3Sb5 / PbI2-WS2,CsV3Sb5 / RbV3Sb5,SrTiO3 / KVsSb5,SrTiO3 / PbI2-WS2, SrTiO3 / RbV3Sb5,KVsSb5 / PbI2-WS2,KVsSb5 / RbV3Sb5,PbI2-WS2 / RbV3Sb5.

9. The laser element containing a spin-helical inductor layer as described in claim 4, characterized in that, The ternary core-shell structure of the spin-helical inductor layer includes the following: Cd3Ru4Al 12 / CsV3Sb5 / SrTiO3, Cd3Ru4Al 12 / CsV3Sb5 / KVsSb5,Cd3Ru4Al 12 / CsV3Sb5 / PbI2-WS2, Cd3Ru4Al 12 / CsV3Sb5 / RbV3Sb5, Cd3Ru4Al 12 / SrTiO3 / KVsSb5,Cd3Ru4Al 12 / SrTiO3 / PbI2-WS2, Cd3Ru4Al 12 / SrTiO3 / RbV3Sb5, Cd3Ru4Al 12 / KVsSb5 / PbI2-WS2,Cd3Ru4Al 12 / KVsSb5 / RbV3Sb5,Cd3Ru4Al 12 / PbI2-WS2 / RbV3Sb5, CsV3Sb5 / SrTiO3 / KVsSb5,CsV3Sb5 / SrTiO3 / PbI2-WS2,CsV3Sb5 / SrTiO3 / RbV3Sb5, CsV3Sb5 / KVsSb5 / PbI2-WS2,CsV3Sb5 / KVsSb5 / RbV3Sb5,CsV3Sb5 / PbI2-WS2 / RbV3Sb5, SrTiO3 / KVsSb5 / PbI2-WS2, SrTiO3 / KVsSb5 / RbV3Sb5, SrTiO3 / PbI2-WS2 / RbV3Sb5.

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