Cushioning materials, packing materials, and packing items

Abstract

This disclosure provides a cushioning material, a packing material, and a packing article. The cushioning material is characterized in that it is formed by stacking multiple cushioning sheets, which cushion external forces applied to an electronic device. The multiple cushioning sheets include: a first cushioning sheet arranged intersecting the direction of the external force applied to the electronic device; and a second cushioning sheet having a higher strength in the direction of the external force applied to the electronic device compared to the first cushioning sheet, and also arranged intersecting the direction of the external force applied to the electronic device.

Description

Technical Field

[0001] This disclosure relates to a cushioning material, a packing material, and a packing article. Background Technology

[0002] Buffering materials are known to cushion external forces applied to electronic devices. For example, Patent Document 1 discloses a technique related to a buffering material formed by stacking multiple buffer sheets.

[0003] However, in the case of cushioning material being composed of multiple cushioning sheets with the same thickness and strength, as in existing technologies, many cushioning sheets need to be stacked to improve the cushioning capacity of the cushioning material.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2010-274936 Summary of the Invention

[0005] To address the above-mentioned issues, the cushioning material disclosed herein is characterized in that it is a cushioning material formed by stacking multiple cushioning sheets, which cushion external forces applied to an electronic device. The multiple cushioning sheets include: a first cushioning sheet arranged in a manner intersecting the direction of the external force applied to the electronic device; and a second cushioning sheet, the second cushioning sheet having a higher intensity in the direction of the external force applied to the electronic device compared to the first cushioning sheet, and also arranged in a manner intersecting the direction of the external force applied to the electronic device.

[0006] Furthermore, the cushioning material disclosed herein is characterized in that it is a cushioning material formed by stacking multiple cushioning structures, which cushion external forces applied to an electronic device. The multiple cushioning structures include: a first cushioning structure configured to intersect the direction of the external force applied to the electronic device; and a second cushioning structure, the intensity of which is higher than that of the first cushioning structure in the direction of the external force applied to the electronic device, and configured to intersect the direction of the external force applied to the electronic device.

[0007] Furthermore, the packaging material disclosed herein is characterized by comprising: a packaging box for housing electronic devices; and a cushioning material, which is a cushioning material formed by stacking multiple cushioning sheets, the multiple cushioning sheets cushioning external forces applied to the electronic devices, the multiple cushioning sheets comprising: a first cushioning sheet arranged in a manner intersecting the direction of the external force applied to the electronic devices; and a second cushioning sheet having a higher strength in the direction of the external force applied to the electronic devices compared to the first cushioning sheet, and arranged in a manner intersecting the direction of the external force applied to the electronic devices.

[0008] Furthermore, the packaged article disclosed herein is characterized by comprising: an electronic device; a packing box for housing the electronic device; and a cushioning material, which is a cushioning material formed by stacking multiple cushioning sheets, the multiple cushioning sheets cushioning external forces applied to the electronic device, the multiple cushioning sheets comprising: a first cushioning sheet arranged in a manner intersecting the direction of the external force applied to the electronic device; and a second cushioning sheet having a higher strength in the direction of the external force applied to the electronic device compared to the first cushioning sheet, and arranged in a manner intersecting the direction of the external force applied to the electronic device. Attached Figure Description

[0009] Figure 1 An exploded perspective view showing an example of the structure of the packaging material 1 according to an embodiment of the present disclosure.

[0010] Figure 2 A perspective view showing an example of the structure of the supporting material S.

[0011] Figure 3 This is a cross-sectional view showing an example of the structure of the cushioning material R.

[0012] Figure 4 A cross-sectional view showing an example of the deformation of the cushioning material R.

[0013] Figure 5 A cross-sectional view showing an example of the structure of the cushioning material RT-B involved in Reference Example 1.

[0014] Figure 6 A cross-sectional view showing an example of the structure of the cushioning material RT-C involved in Reference Example 2.

[0015] Figure 7 This is an explanatory diagram used to illustrate an example of compressive force F.

[0016] Figure 8An explanatory diagram illustrating an example of the acceleration G generated by the electronic device 100.

[0017] Figure 9 An explanatory diagram illustrating an example of the measured value of the acceleration G generated by the electronic device 100.

[0018] Figure 10 A cross-sectional view showing an example of the structure of the cushioning material RT-D involved in Reference Example 3.

[0019] Figure 11 An explanatory diagram illustrating an example of the acceleration G generated by the electronic device 100.

[0020] Figure 12 An explanatory diagram illustrating an example of the acceleration G generated by the electronic device 100.

[0021] Figure 13 This is an explanatory diagram used to illustrate a sinusoidal half-wave.

[0022] Figure 14 An explanatory diagram illustrating an example of the results of a drop test on electronic device 100.

[0023] Figure 15 A cross-sectional view showing an example of the structure of the cushioning material RV-A involved in Modified Example 1.

[0024] Figure 16 A cross-sectional view showing an example of the structure of the cushioning material RV-B involved in Modified Example 1.

[0025] Figure 17 A cross-sectional view showing an example of the structure of the cushioning material RV-C involved in Modified Example 1.

[0026] Figure 18 A cross-sectional view showing an example of the structure of the cushioning material R involved in variation example 3.

[0027] Figure 19 A cross-sectional view showing an example of the structure of the cushioning material R involved in variation example 4. Detailed Implementation

[0028] Hereinafter, the methods for implementing this disclosure will be described with reference to the accompanying drawings. However, in the drawings, the dimensions and scales of the parts are appropriately made different from the actual figures. Furthermore, although various technically preferred limitations are added as the embodiments described below are preferred examples of this disclosure, the scope of this disclosure is not limited to these methods unless otherwise specifically limited in the following description.

[0029] A. Implementation Method

[0030] The packaging material 1 that houses the electronic device 100 will be described below.

[0031] 1. Overall Overview of Packaging Materials

[0032] Figure 1 An exploded perspective view showing an example of the structure of packaging material 1.

[0033] like Figure 1 As shown, the packaging material 1 houses the electronic device 100. Specifically, the packaging material 1 includes a packaging box 2 capable of housing the electronic device 100, and a plurality of support materials S for supporting the electronic device 100 housed in the packaging box 2. The support materials S include a cushioning material R for buffering external forces applied relative to the electronic device 100 housed in the packaging box 2.

[0034] Here, electronic device 100 refers to a printing device such as an inkjet printer. However, in this embodiment, devices other than printing devices, such as televisions, refrigerators, washing machines, microwave ovens, or personal computers, may also be used as electronic device 100.

[0035] Additionally, in the following text, the packaging material 1 and the electronic device 100 contained within the packaging material 1 will sometimes be referred to as "packaged items".

[0036] like Figure 1 As shown, in this embodiment, it is envisioned that the packaging material 1 has four support materials S-1 to S-4. In this embodiment, the electronic device 100 and the four support materials S-1 to S-4 are inserted into the interior of the packaging box 2 through the opening 20, and are thus housed in the packaging box 2.

[0037] For ease of explanation, a packing box coordinate system ΣW, fixed to the packing box 2, is introduced below. The packing box coordinate system ΣW is a coordinate system with three axes: ZW, XW, and YW. The ZW axis extends in the ZW1 direction, which is the direction from the bottom surface of the packing box 2 towards the opening 20. The XW axis extends in the XW1 direction, which is orthogonal to the ZW1 direction. The YW axis extends in the YW1 direction, which is orthogonal to both the ZW1 and XW1 directions. Although this embodiment exemplifies the case where the XW, YW, and ZW axes are orthogonal, this disclosure is not limited to this arrangement. The XW, YW, and ZW axes only need to intersect each other. Furthermore, in the following text, the direction opposite to the XW1 direction is referred to as the XW2 direction, the direction opposite to the YW1 direction is referred to as the YW2 direction, and the direction opposite to the ZW1 direction is referred to as the ZW2 direction.

[0038] like Figure 1 As shown, support material S-1 is a support material S that holds the lower end of the electronic device 100 in the ZW2 direction and the XW2 direction of the electronic device 100 when the electronic device 100 and the four support materials S-1 to S-4 are housed in the packaging box 2. Support material S-2 is a support material S that holds the lower end of the electronic device 100 in the ZW2 direction and the XW1 direction of the electronic device 100 when the electronic device 100 and the four support materials S-1 to S-4 are housed in the packaging box 2. Support material S-3 is a support material S that holds the upper end of the electronic device 100 in the ZW1 direction and the XW2 direction of the electronic device 100 when the electronic device 100 and the four support materials S-1 to S-4 are housed in the packaging box 2. The support material S-4 is a support material S that holds the upper end of the electronic device 100 in the ZW1 direction and the XW1 direction of the electronic device 100 when the electronic device 100 and the four support materials S-1 to S-4 are housed in the packaging box 2.

[0039] 2. Overview of Supporting and Cushioning Materials

[0040] The following is based on... Figures 2 to 4 At the same time, an example of the support material S and the buffer material R involved in this embodiment will be described.

[0041] Figure 2 A perspective view showing an example of the structure of the supporting material S.

[0042] like Figure 2 As shown, the support material S includes a plurality of buffer materials R for buffering the external force applied to the electronic device 100, and a retaining material PP for retaining each buffer material R.

[0043] The retaining material PP comprises a plate-shaped portion P1 constituting the bottom surface of the supporting material S, a plate-shaped portion P2 constituting one of the two sides of the supporting material S, a plate-shaped portion P3 constituting the other side of the supporting material S, and a plate-shaped portion P4 constituting the back surface of the supporting material S. In the following text, plate-shaped portions P1, P2, P3, and P4 will sometimes be collectively referred to as plate-shaped portion P.

[0044] In addition, in this embodiment, as an example, it is envisioned that the multiple plate-shaped portions P constituting the retaining material PP are each made of corrugated cardboard.

[0045] like Figure 2As shown, in this embodiment, the following scenario is envisioned: the support material S comprises two cushioning materials R held by the plate-shaped portion P1, one cushioning material R held by the plate-shaped portion P2, one cushioning material R held by the plate-shaped portion P3, and two cushioning materials R held by the plate-shaped portion P4.

[0046] In addition, in this embodiment, as an example, it is envisioned that the multiple cushioning materials R set on the support material S are each made of corrugated cardboard.

[0047] For ease of explanation, a buffer material coordinate system ΣR, fixed to each buffer material R, is introduced below. The buffer material coordinate system ΣR is a coordinate system having three axes: a Z-axis extending in the Z1 direction, an X-axis extending in the X1 direction, and a Y-axis extending in the Y1 direction. Here, the Z1 direction refers to the direction from one of the multiple surfaces of the buffer material R that is in contact with the plate-like portion P of the supporting material S, towards the opposite surface, and is orthogonal to the extending direction of the plate-like portion P. Furthermore, the X1 direction refers to a direction orthogonal to the Z1 direction and parallel to the extending direction of the plate-like portion P. Furthermore, the Y1 direction refers to a direction orthogonal to both the Z1 and X1 directions and parallel to the extending direction of the plate-like portion P. Although this embodiment exemplifies the case where the X-axis, Y-axis, and Z-axis are orthogonal to each other, this disclosure is not limited to this arrangement. The X-axis, Y-axis, and Z-axis may simply intersect each other. Furthermore, in the following text, the direction opposite to the X1 direction will be referred to as the X2 direction, the direction opposite to the Y1 direction will be referred to as the Y2 direction, and the direction opposite to the Z1 direction will be referred to as the Z2 direction.

[0048] That is, in this embodiment, the buffer material coordinate system ΣR is set such that the direction of the electronic device 100 when viewed from the buffer material R is the Z1 direction, with the electronic device 100 and the four support materials S-1 to S-4 housed in the packing box 2.

[0049] Figure 3 To indicate by Figure 2 The Ee line in the diagram cuts through the cushioning material R, and is an example of the cross-sectional structure of the cushioning material R.

[0050] like Figure 3As shown, the cushioning material R comprises a cushioning block DS-B formed by stacking multiple cushioning sheets DB, and a cushioning block DS-C formed by stacking multiple cushioning sheets DC. Specifically, in this embodiment, it is envisioned that the number of cushioning sheets DB included in the cushioning block DS-B is greater than the number of cushioning sheets DC included in the cushioning block DS-C. More specifically, in this embodiment, as an example, it is envisioned that the cushioning block DS-B includes five cushioning sheets DB, and the cushioning block DS-C includes three cushioning sheets DC.

[0051] In the following text, the buffer sheet DB and the buffer sheet DC will sometimes be collectively referred to as buffer sheet D. That is, in this embodiment, the buffer material R is constructed by stacking multiple buffer sheets D. Figure 3 As shown, the plurality of cushioning sheets D constituting the cushioning material R are arranged to extend in a direction intersecting the Z-axis direction. Specifically, the plurality of cushioning sheets D constituting the cushioning material R are arranged to extend in both the X-axis and Y-axis directions. Furthermore, in this embodiment, as an example, it is envisioned that the plurality of cushioning sheets D constituting the cushioning material R are each made of corrugated cardboard.

[0052] Furthermore, in this embodiment, as an example, it is envisioned that the buffer block DS-C is positioned in the Z2 direction of the buffer block DS-B. That is, in this embodiment, the buffer material R is configured such that the buffer block DS-B is positioned between the buffer block DS-C and the electronic device 100, with the electronic device 100 and the four support materials S-1 to S-4 housed in the packaging box 2. In other words, in this embodiment, the buffer material R is configured such that the buffer sheet DB is located between the buffer sheet DC and the electronic device 100, with the electronic device 100 and the four support materials S-1 to S-4 housed in the packaging box 2.

[0053] The buffer sheet DB comprises a liner QB-H1, a liner QB-H2, and a core QB-M. Liners QB-H1 and QB-H2 are flat components formed of paper. The core QB-M is a wave-shaped component formed of paper, disposed between liner QB-H1 and liner QB-H2. Specifically, the core QB-M is formed with an undulating wave shape repeated at each interval LB, and is fixed to liner QB-H1 and liner QB-H2 using adhesive or the like.

[0054] The buffer sheet DC comprises a liner QC-H1, a liner QC-H2, and a core QC-M. Liners QC-H1 and QC-H2 are flat components formed from paper. The core QC-M is a wave-shaped component formed from paper, disposed between liner QC-H1 and liner QC-H2. Specifically, the core QC-M is formed with an undulating wave shape repeated at each interval LC, and is fixed to liner QC-H1 and liner QC-H2 using adhesive or the like.

[0055] In this embodiment, the following situation is envisioned: the interval LC, which is the period of the waveform of the core QC-M, is longer than the interval LB, which is the period of the waveform of the core QB-M.

[0056] Furthermore, in the following text, the thickness of the buffer sheet DB in the Z-axis direction will be referred to as thickness ZD-B, and the thickness of the buffer sheet DC in the Z-axis direction will be referred to as thickness ZD-C. Additionally, in the following text, thicknesses ZD-B and ZD-C may sometimes be collectively referred to as thickness ZD.

[0057] Furthermore, in the following text, the thickness ZD-B of the buffer sheet DB when no force is applied in the Z-axis direction relative to the buffer sheet DB, and thus the buffer sheet DB is not compressed in the Z-axis direction, is referred to as the reference thickness ZD-B0, and the thickness ZD-C of the buffer sheet DC when no force is applied in the Z-axis direction relative to the buffer sheet DC, and thus the buffer sheet DC is not compressed in the Z-axis direction, is referred to as the reference thickness ZD-C0.

[0058] Furthermore, in this embodiment, the following situation is envisioned, namely, such as... Figure 3 As shown, the reference thickness ZD-C0 is thicker than the reference thickness ZD-B0. That is, in this embodiment, the density of the core QB-M disposed in the buffer sheet DB is higher than the density of the core QC-M disposed in the buffer sheet DC. Therefore, in this embodiment, the buffer sheet DB has higher strength in the Z-axis direction compared to the buffer sheet DC.

[0059] Furthermore, in the following text, the thickness of the cushioning material R in the Z-axis direction will be referred to as the thickness ZR. Additionally, in the following text, the thickness ZR of the cushioning material R in the Z-axis direction when no force is applied relative to the cushioning material R in the Z-axis direction, and therefore the cushioning material R is not compressed in the Z-axis direction, will be referred to as the reference thickness ZR0.

[0060] Furthermore, in the following text, the value obtained by subtracting the thickness ZR from the reference thickness ZR0 and dividing it by the reference thickness ZR0 will be called the compression coefficient VZ. That is, the compression coefficient VZ is a positive real number that satisfies "VZ=(ZR0-ZR)÷ZR0". In addition, in this embodiment, it is envisioned that the compression coefficient VZ satisfies "0≤VZ≤1".

[0061] Figure 4 An explanatory diagram illustrating an example of a situation in which a force is applied in the Z-axis direction relative to the cushioning material R, causing the cushioning material R to be compressed in the Z-axis direction.

[0062] In addition, Figure 4 In this context, the thickness ZR of the buffer material R at time t1, which is later than time t0 when the force in the Z-axis direction is first applied relative to the buffer material R, is called thickness ZR(t1). The thickness ZR of the buffer material R at time t2, which is later than time t1 when the force in the Z-axis direction is applied relative to the buffer material R, is called thickness ZR(t2). The thickness ZR of the buffer material R at time t3, which is later than time t2 when the force in the Z-axis direction is applied relative to the buffer material R, is called thickness ZR(t3).

[0063] like Figure 4 As shown, when a force is initially applied in the Z-axis direction relative to the cushioning material R, from time t0 to time t1, one of the cushioning sheets DC in the cushioning block DS-C is gradually compressed in the Z-axis direction, reaching a state where, at time t1, this single cushioning sheet DC is compressed to the point of crushing in the Z-axis direction. Subsequently, from time t1 to time t2, the other cushioning sheets DC in the cushioning block DS-C are compressed in the Z-axis direction, reaching a state where, at time t2, all the cushioning sheets DC in the cushioning block DS-C are compressed to the point of crushing in the Z-axis direction. Subsequently, from time t2 to time t3, a portion of the cushioning sheets DB in the cushioning block DS-B is compressed in the Z-axis direction, reaching a state where, at time t3, this portion of the cushioning sheets DB is compressed to the point of crushing in the Z-axis direction. Furthermore, in Figure 4 In the example shown, at time t3, the force applied relative to the cushioning material R in the Z-axis direction stops.

[0064] Thus, when a force is applied in the Z-axis direction relative to the cushioning material R, the cushioning sheet DC, which is weaker than the stronger cushioning sheet DB, will be compressed and eventually crushed.

[0065] 3. Comparison of cushioning materials involved in the reference examples

[0066] Next, in order to clarify the advantages of the cushioning material R involved in this embodiment, while referring to... Figures 5 to 11 At the same time, the cushioning materials involved in the reference example will be explained.

[0067] Figure 5 A cross-sectional view showing the structure of the cushioning material RT-B involved in Reference Example 1.

[0068] like Figure 5 As shown, the cushioning material RT-B does not have cushioning sheets DC; it is composed of a cushioning block DS-BT formed by stacking multiple cushioning sheets DB. Specifically, in Reference Example 1, as an example, the following situation is envisioned: the cushioning block DS-BT includes eight cushioning sheets DB.

[0069] Furthermore, in the following text, the thickness of the cushioning material RT-B in the Z-axis direction will be referred to as thickness ZR-B. Additionally, in the following text, the thickness ZR-B of the cushioning material RT-B in the Z-axis direction when no force is applied relative to the cushioning material RT-B in the Z-axis direction, and therefore the cushioning material RT-B is not compressed in the Z-axis direction, will be referred to as reference thickness ZR-B0. Furthermore, in the following text, the value obtained by subtracting thickness ZR-B from reference thickness ZR-B0 and dividing by reference thickness ZR-B0 will be referred to as the compression coefficient VZ-B.

[0070] Figure 6 A cross-sectional view showing the structure of the cushioning material RT-C involved in Reference Example 2.

[0071] like Figure 6 As shown, the buffer material RT-C does not have buffer sheets DB; it is composed of a buffer block DS-CT formed by stacking multiple buffer sheets DC. Specifically, in Reference Example 2, as an example, the buffer block DS-CT is envisioned to include eight buffer sheets DC.

[0072] Furthermore, in the following text, the thickness of the cushioning material RT-C in the Z-axis direction is referred to as thickness ZR-C. Additionally, in the following text, the thickness ZR-C of the cushioning material RT-C in the Z-axis direction when no force is applied relative to the cushioning material RT-C in the Z-axis direction, and therefore the cushioning material RT-C is not compressed in the Z-axis direction, is referred to as reference thickness ZR-C0. Furthermore, in the following text, the value obtained by subtracting thickness ZR-C from reference thickness ZR-C0 and dividing by reference thickness ZR-C0 is referred to as the compressibility coefficient VZ-C.

[0073] Figure 7 This is an explanatory diagram used to illustrate an example of compressive force F.

[0074] Here, the compressive force F refers to the force applied relative to the cushioning material R in the Z-axis direction in order to compress the cushioning material R.

[0075] In addition, Figure 7 In this context, the relationship between the compressibility coefficient VZ-B of the cushioning material RT-B and the compressive force F applied relative to the cushioning material RT-B is represented as the relationship line LF-B. Furthermore, in... Figure 7 In this paper, the relationship between the compressibility coefficient VZ-C of the cushioning material RT-C and the compressive force F applied relative to the cushioning material RT-C is represented as the relationship line LF-C.

[0076] like Figure 7 As shown, when a compressive force F is applied to the buffer material RT-B, the compressibility coefficient VZ-B of the buffer material RT-B gradually increases from "0". During the period from when the compressibility coefficient VZ-B reaches a value VZ-B1 greater than "0" to a value VZ-B2 greater than VZ-B1, the compressive force F applied to the buffer material RT-B remains at a fixed compressive force FM-B. That is, when the compressibility coefficient VZ-B satisfies "VZ-B1≤VZ-B≤VZ-B2", the buffer material RT-B buffers the external force applied to it, thus transmitting the compressive force FM-B to the electronic device 100. Then, after the compressibility coefficient VZ-B exceeds "value VZ-B2", the compressive force F applied to the buffer material RT-B also increases as the compressibility coefficient VZ-B increases.

[0077] In addition, the case where the compression coefficient VZ-B is VZ-B2 refers to the situation where all the multiple buffer sheets DB constituting the buffer material RT-B are compressed to the point of being crushed.

[0078] like Figure 7 As shown, when a compressive force F is applied to the buffer material RT-C, the compressibility factor VZ-C of the buffer material RT-C gradually increases from "0". During the period from when the compressibility factor VZ-C reaches a value VZ-C1 greater than "0" to when it reaches a value VZ-C2 greater than VZ-C1, the compressive force F applied to the buffer material RT-C remains a fixed compressive force FM-C, which is less than the compressive force FM-B. That is, when the compressibility factor VZ-C satisfies "VZ-C1 ≤ VZ-C ≤ VZ-C2", the buffer material RT-C buffers the external force applied to it, thus transmitting the compressive force FM-C to the electronic device 100. Then, after the compressibility factor VZ-C exceeds "value VZ-C2", the compressive force F applied to the buffer material RT-C also increases as the compressibility factor VZ-C increases.

[0079] In addition, the case where the compression coefficient VZ-C is VZ-C2 refers to the situation where all the multiple buffer sheets DC constituting the buffer material RT-C are compressed to the point of being crushed.

[0080] Figure 8 A diagram illustrating an example of the acceleration G produced by the electronic device 100.

[0081] Specifically, in Figure 8 The diagram illustrates the magnitude of the acceleration G generated by the electronic device 100 when the packaging material 1, including the electronic device 100, is dropped from a predetermined height onto a floor surface, with the packaging material 1 containing the electronic device 100 of a predetermined weight within it. More specifically, in Figure 8 In this context, the change of the acceleration G generated by the electronic device 100 over time is represented by the acceleration line LG-B, assuming that there is a buffer material RT-B between the electronic device 100 and the floor surface when the packaging material 1 containing the electronic device 100 falls from a predetermined height. Furthermore, in... Figure 8 In this diagram, the change of acceleration G generated by the electronic device 100 over time is represented by acceleration line LG-C when the packaging material 1 containing the electronic device 100 falls from a predetermined height and there is a cushioning material RT-C between the electronic device 100 and the floor surface. Furthermore, acceleration lines LG-B and LG-C are defined as representing the theoretical value of acceleration G generated by the electronic device 100, rather than the measured value.

[0082] like Figure 8 As shown, when the electronic device 100 is dropped from a predetermined height with a cushioning material RT-B between it and the floor surface, the electronic device 100 will experience an acceleration GM-B corresponding to the compressive force FM-B because the cushioning material RT-B will bear the compressive force FM-B. Furthermore, in Figure 8 The following scenario is envisioned: when the electronic device 100 is dropped from a predetermined height with a cushioning material RT-B between it and the floor surface, the electronic device 100 will stop before all the multiple cushioning sheets DB constituting the cushioning material RT-B are compressed and crushed. Specifically, in Figure 8The following scenario is envisioned: when the electronic device 100 is dropped from a predetermined height with a buffer material RT-B between it and the floor surface, at a moment Ts-B before all the multiple buffer sheets DB constituting the buffer material RT-B are compressed and crushed, the buffer material RT-B will absorb the impact generated by the drop of the electronic device 100.

[0083] In addition, such as Figure 8 As shown, when the electronic device 100 is dropped from a predetermined height with a cushioning material RT-C between it and the floor surface, the electronic device 100 bears the compressive force FM-C through the cushioning material RT-C, resulting in an acceleration GM-C corresponding to the compressive force FM-C within the electronic device 100. Furthermore, in Figure 8 The following scenario is envisioned: when the electronic device 100 is dropped from a predetermined height with a cushioning material RT-C between it and the floor surface, the electronic device 100 will stop before all the multiple cushioning sheets DC constituting the cushioning material RT-C are compressed and crushed. Specifically, in Figure 8 In this design, a scenario is envisioned whereby, when the electronic device 100 is dropped from a predetermined height with a buffer material RT-C between it and the floor surface, at a moment Ts-C before all the buffer sheets DC constituting the buffer material RT-C are compressed and crushed, the buffer material RT-C absorbs the impact generated by the drop of the electronic device 100.

[0084] Here, the area SG-B, divided by the acceleration line LG-B and the straight line representing acceleration G=0, during the period from the moment T=0 when the packaging material 1 storing the electronic device 100 comes into contact with the floor surface to the moment Ts-B, is equal to the area SG-C, divided by the acceleration line LG-C and the straight line representing acceleration G=0, during the period from the moment T=0 to the moment Ts-C. As mentioned above, the compressive force FM-B is larger than the compressive force FM-C. Therefore, the acceleration GM-B is larger than the acceleration GM-C. Therefore, in Figure 8 In this context, time Ts-C becomes a later time compared to time Ts-B.

[0085] Furthermore, as mentioned above, acceleration lines LG-B and LG-C represent the theoretical values ​​of the acceleration G generated by the electronic device 100. When the electronic device 100 is dropped from a predetermined height onto the floor surface while it is contained within the packaging material 1, the measured value of the acceleration G generated by the electronic device 100 is represented by a curve.

[0086] Figure 9 This diagram illustrates the measured values ​​of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height onto a floor surface while the electronic device 100 is contained within the packaging material 1. Specifically, acceleration line LCr-B represents the measured value of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height with a cushioning material RT-B between the electronic device 100 and the floor surface. Furthermore, acceleration line LCr-C represents the measured value of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height with a cushioning material RT-C between the electronic device 100 and the floor surface.

[0087] like Figure 9 As shown, the acceleration curves LCr-B and LCr-C are trapezoidal waves with two peaks. Furthermore, LCr-B is a curve where the acceleration G begins to be greater than 0 at time T = 0 and returns to 0 at time Te-B. Similarly, LCr-C is a curve where the acceleration G begins to be greater than 0 at time T = 0 and returns to 0 at time Te-C.

[0088] Figure 10 A cross-sectional view showing the structure of the cushioning material RT-D involved in Reference Example 3.

[0089] like Figure 10 As shown, the cushioning material RT-D comprises a cushioning block DS-BD formed by stacking multiple cushioning sheets DB, and a cushioning block DS-CD formed by stacking multiple cushioning sheets DC. In Reference Example 3, it is envisioned that the number of cushioning sheets DC in the cushioning block DS-CD is greater than the number of cushioning sheets DB in the cushioning block DS-BD. Specifically, in Reference Example 3, it is envisioned that the cushioning block DS-BD comprises four cushioning sheets DB, and the cushioning block DS-CD comprises five cushioning sheets DC.

[0090] Furthermore, in the following text, the thickness of the cushioning material RT-D in the Z-axis direction will be referred to as thickness ZR-D. Additionally, in the following text, the thickness ZR-D of the cushioning material RT-D in the Z-axis direction when no force is applied relative to the cushioning material RT-D in the Z-axis direction, and therefore the cushioning material RT-D is not compressed in the Z-axis direction, will be referred to as reference thickness ZR-D0. Furthermore, in the following text, the value obtained by subtracting thickness ZR-D from reference thickness ZR-D0 and dividing by reference thickness ZR-D0 will be referred to as the compression coefficient VZ-D.

[0091] Figure 11 This diagram illustrates an example of an external force applied to an electronic device 100 via a buffer material RT-D.

[0092] Specifically, in Figure 11 The diagram illustrates the magnitude of the acceleration G generated by the electronic device 100 when the packaging material 1, including the electronic device 100, is dropped from a predetermined height onto a floor surface, with the packaging material 1 containing the electronic device 100 of a predetermined weight within it. More specifically, in Figure 11 In the present, the change of acceleration G generated by the electronic device 100 over time is represented as the acceleration line LG-D when the packaging material 1 containing the electronic device 100 falls from a predetermined height and there is a buffer material RT-D between the electronic device 100 and the floor surface.

[0093] As described above, when the electronic device 100 is dropped from a predetermined height with a buffer material RT-D between it and the floor surface, the buffer sheet DC, which has lower strength in the Z-axis direction, will be compressed and crushed first compared to the buffer sheet DB. Therefore, when the electronic device 100 is dropped from a predetermined height with the buffer material RT-D between it and the floor surface, the electronic device 100 is first subjected to the compressive force FM-C by the buffer sheet DC included in the buffer material RT-D. After all the buffer sheets DC included in the buffer material RT-D have been compressed and crushed, the buffer sheet DB included in the buffer material RT-D will then bear the compressive force FM-B. Therefore, as... Figure 11 As shown, when the electronic device 100 is dropped from a predetermined height with a buffer material RT-D between the electronic device 100 and the floor surface, an acceleration GM-C corresponding to the compressive force FM-C will first be generated in the electronic device 100, and then an acceleration GM-B corresponding to the compressive force FM-B will be generated.

[0094] In addition, Figure 11The following scenario is envisioned: when the electronic device 100 is dropped from a predetermined height with a cushioning material RT-D between it and the floor surface, the electronic device 100 will stop after all the multiple cushioning sheets DC constituting the cushioning material RT-D have been compressed to the point of collapse, and before all the multiple cushioning sheets DB constituting the cushioning material RT-D have been compressed to the point of collapse. Specifically, in Figure 11 In this design, a scenario is envisioned whereby, when the electronic device 100 is dropped from a predetermined height with a buffer material RT-D between it and the floor surface, at a time Ts-D that is later than the time Ts-CB1 when all the buffer sheets DC constituting the buffer material RT-D are compressed and crushed, and before the time Ts-D when all the buffer sheets DB constituting the buffer material RT-D are compressed and crushed, the buffer material RT-D will absorb the impact generated by the drop of the electronic device 100.

[0095] Here, the area SG-D, which is divided by the acceleration line LG-D and the straight line representing acceleration G=0, during the period from the moment T=0 when the packaging material 1 for storing the electronic device 100 comes into contact with the floor surface until time Ts-D, is equal to the areas SG-B and SG-C mentioned above. Therefore, time Ts-D is a later time compared to time Ts-B, and an earlier time compared to time Ts-C.

[0096] Furthermore, the acceleration line LG-D represents the theoretical value of the acceleration G generated by the electronic device 100, not the measured value. When the electronic device 100 is dropped from a predetermined height onto the floor surface while contained within the packaging material 1, the measured value of the acceleration G generated by the electronic device 100 becomes... Figure 11 The acceleration curve LGr-D is shown. (As shown in the image) Figure 11 As shown, the acceleration curve LGr-D is a waveform with two peaks. Furthermore, the acceleration curve LGr-D is a curve where the acceleration G begins to be greater than "0" at time T = 0, and returns to "0" at time Te-D.

[0097] Figure 12 This diagram illustrates an example of an external force applied to an electronic device 100 via the buffer material R involved in this embodiment.

[0098] Specifically, in Figure 12The diagram illustrates the magnitude of the acceleration G generated by the electronic device 100 when the packaging material 1, containing the electronic device 100 of a predetermined weight, is dropped from a predetermined height onto a floor surface. More specifically, in... Figure 12 In this context, the change of acceleration G generated by the electronic device 100 over time is represented as an acceleration line LG when the packaging material 1 containing the electronic device 100 falls from a predetermined height and there is a buffer material R between the electronic device 100 and the floor surface.

[0099] When the electronic device 100 is dropped from a predetermined height with a cushioning material R between it and the floor surface, the electronic device 100 first bears the compressive force FM-C through the cushioning sheet DC included in the cushioning material R. Subsequently, after all the cushioning sheets DC included in the cushioning material R have been compressed and crushed, the compressive force FM-B is borne by the cushioning sheet DB included in the cushioning material R. Therefore, as... Figure 12 As shown, when the electronic device 100 is dropped from a predetermined height with a buffer material R between the electronic device 100 and the floor surface, an acceleration GM-C corresponding to the compressive force FM-C will first be generated in the electronic device 100, and then an acceleration GM-B corresponding to the compressive force FM-B will be generated.

[0100] In addition, Figure 12 The following scenario is envisioned: when the electronic device 100 is dropped from a predetermined height while a cushioning material R exists between the electronic device 100 and the floor surface, the electronic device 100 will stop after all the multiple cushioning sheets DC constituting the cushioning material R have been compressed to the point of collapse, and before all the multiple cushioning sheets DB constituting the cushioning material R have been compressed to the point of collapse. Specifically, in Figure 12 In this context, the following scenario is envisioned: when the electronic device 100 is dropped from a predetermined height while a buffer material R exists between the electronic device 100 and the floor surface, at a time Ts that is later than the time Ts-CB2 when all the buffer sheets DC constituting the buffer material R are compressed to the point of collapse, and before the time Ts when all the buffer sheets DB constituting the buffer material R are compressed to the point of collapse, the buffer material R will absorb the impact generated by the drop of the electronic device 100.

[0101] Here, the area SG, divided by the acceleration line LG and the straight line representing acceleration G=0, during the period from the moment T=0 when the packaging material 1 storing the electronic device 100 comes into contact with the floor surface to the moment Ts, is equal to the areas SG-B, SG-C, and SG-D mentioned above. Furthermore, moment Ts-CB2 is earlier than moment Ts-CB1. Therefore, moment Ts is later than moment Ts-B, earlier than moment Ts-C, and earlier than moment Ts-D.

[0102] Furthermore, the acceleration line LG represents the theoretical value of the acceleration G generated by the electronic device 100, not the measured value. When the electronic device 100 is dropped from a predetermined height onto the floor surface while contained within the packaging material 1, the measured value of the acceleration G generated by the electronic device 100 will become... Figure 12 The acceleration curve LGr is shown. As mentioned above, time Ts-CB2 is an earlier time compared to time Ts-CB1. Therefore, as... Figure 12 As shown, the acceleration curve LGr is a sinusoidal half-wave with a peak value. Furthermore, let LG be a curve where the acceleration G begins to be greater than "0" at time T = 0 and returns to "0" at time Te.

[0103] Figure 13 This is an explanatory diagram used to illustrate a sinusoidal half-wave. Additionally, in... Figure 13 In the diagram, a graph with the horizontal axis representing time T and the vertical axis representing acceleration G is used to illustrate the sinusoidal half-wave. Furthermore, in... Figure 13 In this context, the direction in which acceleration G increases is called the G1 direction, and the direction in which acceleration G decreases is called the G2 direction.

[0104] like Figure 13 As shown, a sinusoidal half-wave is a waveform with a shape sandwiched between an upper boundary line LS-T1 located in the direction of G1 relative to the ideal waveform LS, and a lower boundary line LS-T2 located in the direction of G2 relative to the ideal waveform LS.

[0105] Here, the ideal waveform LS is defined as follows: the acceleration G at the beginning of the observation of the sine half-wave is "0", and the maximum value of the acceleration G during the observation period of the sine half-wave is Ho. Furthermore, the shape is defined as the waveform of half a period of the sine wave.

[0106] Furthermore, the upper boundary line LS-T1 is a waveform that causes the ideal waveform LS to slide towards G1 by an amount of "0.2*Ho". In other words, the upper boundary line LS-T1 is a waveform where the acceleration G at the beginning of the observation of the sine half-wave is "0.2*Ho" and the maximum value of the acceleration G of WS during the observation period of the sine half-wave is "1.2*Ho".

[0107] Furthermore, the lower boundary line LS-T2 is a waveform where the acceleration G at the start of the observation of the sinusoidal half-wave is "-0.2*Ho", and the maximum value of the acceleration G during the observation period WS of the sinusoidal half-wave is "0.8*Ho". Additionally, the period W2 during which the acceleration G of the lower boundary line LS-T2 is "0.8*Ho" only needs to be longer than "0".

[0108] Furthermore, the observation period WS of the sinusoidal half-wave was determined to be a period with a length equivalent to 1.5 times the period Wo of the half-cycle of the sine wave of the ideal waveform LS. Specifically, the observation period WS begins at a time "0.4*Wo" earlier than the time when the acceleration G of the ideal waveform LS becomes greater than "0", and ends at a time "0.1*Wo" later than the time when the acceleration G of the ideal waveform LS returns to "0". Additionally, as will be stated below... Figure 13 As shown, the time when the period Wo, which is equivalent to half a period of the sine wave of the ideal waveform LS, begins is called time TW1, and the time when the period Wo ends is called time TW2.

[0109] In this embodiment, for example, in making Figure 13 The moment TW1 became Figure 12 At time T=0, Figure 13 The moment TW2 became Figure 12 The moment Te, and Figure 13 The value Ho becomes Figure 12 The method of determining the maximum value of the acceleration line LGr in the figure. Figure 13 The ideal waveform LS, the upper boundary line LS-T1, and the lower boundary line LS-T2 are... Figure 12 When the acceleration lines LGr overlap, LGr is sandwiched between the upper boundary line LS-T1 and the lower boundary line LS-T2. That is, in this embodiment, Figure 12 The acceleration curve LGr shown conforms to a sine half-wave.

[0110] Additionally, for example, in order to make Figure 13 The moment TW1 became Figure 9 At time T=0, Figure 13 The moment TW2 became Figure 9 The moment Te-B, and Figure 13 The value Ho becomes Figure 9 The method of finding the maximum value of the acceleration line LGr-B in the figure, to... Figure 13 The ideal waveform LS, the upper boundary line LS-T1, and the lower boundary line LS-T2 are... Figure 9 When the acceleration lines LCr-B overlap, LCr-B has a portion that extends beyond the boundary line LS-T1 and the lower boundary line LS-T2. That is, in Reference Example 1, Figure 9 The acceleration curve LGr-B shown does not conform to a sinusoidal half-wave.

[0111] Furthermore, for example, in order to make Figure 13 The moment TW1 became Figure 9 At time T=0, Figure 13 The moment TW2 became Figure 9 The moment Te-C, and Figure 13 The value Ho becomes Figure 9 The method of finding the maximum value of the acceleration line LGr-C in the figure, to... Figure 13 The ideal waveform LS, the upper boundary line LS-T1, and the lower boundary line LS-T2 are... Figure 9 When the acceleration lines LCr-C overlap, LCr-C has a portion that extends beyond the boundary line LS-T1 and the lower boundary line LS-T2. That is, in Reference Example 2, Figure 9 The acceleration curve LGr-C shown does not conform to a sinusoidal half-wave.

[0112] Furthermore, for example, in order to make Figure 13 The moment TW1 became Figure 11 At time T=0, Figure 13 The moment TW2 became Figure 11 The moment Te-D, and Figure 13 The value Ho becomes Figure 11 The method of finding the maximum value of the acceleration line LGr-D in the figure to... Figure 13 The ideal waveform LS, the upper boundary line LS-T1, and the lower boundary line LS-T2 are... Figure 11 When the acceleration lines LCr-D overlap, the acceleration line LCr-D has a portion that extends beyond the boundary line LS-T1 and the lower boundary line LS-T2. That is, in Reference Example 3, Figure 11 The acceleration curve LGr-D shown does not conform to a sinusoidal half-wave.

[0113] Generally, the bandwidth of a trapezoidal wave represented by superimposing sine waves is greater than that of a half-sine wave represented by superimposing sine waves. Furthermore, the bandwidth of a waveform with two peaks represented by superimposing sine waves is greater than that of a half-sine wave represented by superimposing sine waves. In other words, generally, the bandwidth of a waveform other than a half-sine wave represented by superimposing sine waves is greater than that of a half-sine wave represented by superimposing sine waves.

[0114] In other words, the bandwidth of the frequency represented by the superposition of sine waves in the case of acceleration line LTr-B in Reference Example 1, the bandwidth of the frequency represented by the superposition of sine waves in the case of acceleration line LTr-C in Reference Example 2, and the bandwidth of the frequency represented by the superposition of sine waves in the case of acceleration line LTr-D in Reference Example 3 are greater than the bandwidth of the frequency represented by the superposition of sine waves in the case of acceleration line LTr in this embodiment. Therefore, the probability that acceleration line LTr-B contains the inherent vibration frequency of electronic device 100 is higher than that of acceleration line LTr-C, and the probability that acceleration line LTr-D contains the inherent vibration frequency of electronic device 100 is higher than that of acceleration line LTr-D.

[0115] More specifically, the multiple components of the electronic device 100 each have their own distinct natural vibration frequencies. Furthermore, when the multiple natural vibration frequencies corresponding to the multiple components of the electronic device 100 coincide with the frequencies contained in the impact waveform, a phenomenon similar to resonance occurs, which could potentially result in damage to the components of the electronic device 100. In contrast, in this application, by setting the acceleration line LFR to a sinusoidal half-wave, the likelihood that the acceleration line LFR contains multiple natural vibration frequencies corresponding to the multiple components of the electronic device 100 can be reduced compared to Reference Examples 1 to 3.

[0116] Here, "a phenomenon like resonance" refers not only to the increase in amplitude that accompanies vibrations with a period of more than one period, such as the vibration of a repeating sine wave, but also to the increase in amplitude that accompanies vibrations with a period of less than one period, such as the vibration of a half-sine wave. In this specification, "a phenomenon like resonance" may sometimes be referred to simply as "resonance".

[0117] Furthermore, in Reference Example 1, when the acceleration line LGr-B includes the natural vibration frequency of the electronic device 100, and when the external force applied to the falling electronic device 100 is buffered by having a buffer material RT-B between the electronic device 100 and the floor surface, resonance sometimes occurs in the system including the electronic device 100 and the buffer material RT-B, resulting in vibrations in the electronic device 100 exceeding the maximum value of the acceleration G shown on the acceleration line LGr-B. Similarly, in Reference Example 2, when the external force applied to the falling electronic device 100 is buffered by having a buffer material RT-C between the electronic device 100 and the floor surface, vibrations exceeding the maximum value of the acceleration G shown on the acceleration line LGr-C sometimes occur in the electronic device 100. Similarly, in Reference Example 3, when the external force applied to the falling electronic device 100 is buffered by having a buffer material RT-D between the electronic device 100 and the floor surface, vibrations exceeding the maximum value of the acceleration G shown on the acceleration line LGr-D sometimes occur in the electronic device 100. Furthermore, in cases where a large vibration occurs in the electronic device 100 accompanied by resonance, as in Reference Examples 1 to 3, the vibration may sometimes cause a malfunction in the electronic device 100.

[0118] In contrast, in this embodiment, the likelihood that the acceleration line LGr contains the inherent vibration frequency of the electronic device 100 is lower compared to Reference Examples 1 to 3. Therefore, in this embodiment, the possibility of resonance occurring in the system including the electronic device 100 and the buffer material R can be suppressed to a lower degree compared to Reference Examples 1 to 3. Thus, according to this embodiment, the possibility of the electronic device 100 malfunctioning due to the external force applied to the electronic device 100 via the buffer material R can be suppressed to a lower degree compared to Reference Examples 1 to 3.

[0119] Furthermore, according to Reference Examples 1 to 3, in order to buffer external forces against the electronic device 100 even if resonance occurs in the electronic device 100 and the packaging material 1, it is necessary to have a sufficient number of buffer sheets D and to have sufficient thickness in the buffer material. In contrast, according to this embodiment, the number of buffer sheets D can be designed without considering the occurrence of resonance in the electronic device 100 and the packaging material 1. That is, according to this embodiment, even if the number of buffer sheets D is reduced compared to Reference Examples 1 to 3, the electronic device 100 can still be protected from external forces. In other words, according to this embodiment, compared to Reference Examples 1 to 3, it is easier to achieve both a reduction in the number of buffer sheets D and protection of the electronic device 100 from external forces.

[0120] In other words, when the packaging material 1 is designed with the influence of resonance in mind, as in Reference Examples 1 to 3, the consideration is to reduce the acceleration applied to the electronic device 100 even when resonance occurs. This is achieved by, for example, constructing a cushioning material with a sufficient number of cushioning sheets D stacked on top of each other, ensuring that the electronic device 100 is not completely crushed from the moment it falls until it stops, based on a design of relatively weak strength. However, in this case, the number of stacked cushioning sheets D in the cushioning material is very large, resulting in a large size of the cushioning material. This also leads to a larger size of the packaging material 1, increasing not only the cost of the cushioning material but also the transportation cost due to the limitation on the number of packaged items that can be transported at one time. In contrast, this embodiment achieves a balance between reducing the number of cushioning sheets D in the cushioning material R and protecting the electronic device 100 from external forces, and solves problems such as increased cost of the cushioning material and increased transportation costs.

[0121] 4. Test Results

[0122] Next, in reference Figure 14 At the same time, the results of the drop test of electronic device 100 will be explained.

[0123] Figure 14 This is a graph showing the measured values ​​of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height onto a floor surface while the electronic device 100 is contained in the packaging material 1. Additionally, in Figure 14 In this context, the value Go is a predefined value.

[0124] Case 1 is a graph of the acceleration line LG-1, which represents the measured value of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height with a cushioning material RT-1 between the electronic device 100 and the floor surface. Here, the cushioning material RT-1 is composed of five cushioning sheets DB, and it is constructed without including the cushioning sheet DC.

[0125] like Figure 14 As shown, the acceleration line LG-1 represents a trapezoidal wave with two peaks. Therefore, when the electronic device 100 is housed in the packaging material 1 containing the cushioning material RT-1, when an external force is applied to the electronic device 100, resonance will occur in the system including the electronic device 100 and the cushioning material RT-1, resulting in a high probability that vibrations exceeding the maximum value of the acceleration G shown by the acceleration line LG-1 will occur in the electronic device 100.

[0126] Furthermore, Case 2 is a graph of the acceleration line LG-2, which represents the measured value of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height with a cushioning material RT-2 between the electronic device 100 and the floor surface. Here, the cushioning material RT-2 is composed of four cushioning sheets DB and five cushioning sheets DC.

[0127] like Figure 14 As shown, acceleration line LG-2 represents a waveform with two peaks. Therefore, when the electronic device 100 is housed in packaging material 1 containing cushioning material RT-2, when an external force is applied to the electronic device 100, resonance will occur in the system including the electronic device 100 and the cushioning material RT-2, resulting in a high probability that vibrations exceeding the maximum value of acceleration G shown in acceleration line LG-2 will occur in the electronic device 100.

[0128] Furthermore, Case 3 is a graph of the acceleration line LG-3, which represents the measured value of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height with a cushioning material RT-3 between the electronic device 100 and the floor surface. Here, the cushioning material RT-3 is composed of five cushioning sheets DB and two cushioning sheets DC.

[0129] like Figure 14 As shown, the acceleration line LG-3 represents a sinusoidal half-wave with a peak value. Therefore, when the electronic device 100 is housed in the packaging material 1 containing the cushioning material RT-3, the possibility of resonance occurring in the system including the electronic device 100 and the cushioning material RT-3 when an external force is applied to the electronic device 100 can be suppressed to a low level.

[0130] Furthermore, Case 4 is a graph of acceleration line LG-4, showing the measured value of the acceleration G generated by the electronic device 100 when it is dropped from a predetermined height with a cushioning material RT-4 between the electronic device 100 and the floor surface. Here, the cushioning material RT-4, like the cushioning material R in the embodiment, is composed of five cushioning sheets DB and three cushioning sheets DC. Figure 14 As shown, the acceleration line LG-4 represents a sinusoidal half-wave with a peak value. Therefore, when the electronic device 100 is housed in the packaging material 1 containing the cushioning material RT-4, the possibility of resonance occurring in the system including the electronic device 100 and the cushioning material RT-4 when an external force is applied to the electronic device 100 can be suppressed to a low level.

[0131] As described above, in buffer materials such as RT-3 and RT-4, where the number of buffer sheets DB is greater than the number of buffer sheets DC, compared to buffer material RT-1, which is composed solely of buffer sheets DB, and buffer material RT-2, which has fewer buffer sheets DB than buffer sheets DC, the possibility of resonance occurring in the system including the electronic device 100 and the packaging material 1 can be suppressed less. In other words, in buffer material R, where the number of buffer sheets DB is greater than the number of buffer sheets DC as in this embodiment, compared to buffer material where the number of buffer sheets DB is less than the number of buffer sheets DC, the possibility of the electronic device 100 malfunctioning due to external force applied to the electronic device 100 via the buffer material R can be suppressed less.

[0132] Furthermore, although this embodiment exemplifies a configuration in which the number of buffer sheets DB included in the buffer material R is greater than the number of buffer sheets DC included in the buffer material R, this disclosure is not limited to this configuration. The number of buffer sheets DB included in the buffer material R may also be equal to the number of buffer sheets DC included in the buffer material R.

[0133] Furthermore, although this embodiment exemplifies the case where the number of buffer sheets DC included in the buffer material R is multiple, this disclosure is not limited to this method. The number of buffer sheets DC included in the buffer material R can be one or multiple.

[0134] Furthermore, in this embodiment, when the buffer material R is viewed in a plane along the Z-axis direction, which is perpendicular to the buffer sheet D, the plurality of buffer sheets D constituting the buffer material R may also have approximately the same size as each other. Here, "approximately the same" means, in addition to the case of being completely identical, that is, the case of being considered identical if errors are taken into account. Here, "error" may, for example, refer to a difference of less than 10 percent.

[0135] 5. Summary of Implementation Methods

[0136] As described above, the buffer material R involved in this embodiment is characterized in that it is a buffer material R formed by stacking multiple buffer sheets D, which buffer external forces applied to the electronic device 100. The multiple buffer sheets D include: a buffer sheet DC, which is arranged in a manner intersecting the Z-axis direction; and a buffer sheet DB, which has a higher strength in the Z-axis direction than the buffer sheet DC, and is arranged in a manner intersecting the Z-axis direction.

[0137] In other words, according to this embodiment, the buffer material R first buffers the external force applied to the electronic device 100 using the buffer sheet DC, thereby transmitting the compressive force FM-C to the electronic device 100 and causing the electronic device 100 to generate acceleration GM-C. Next, by using the buffer sheet DB to buffer the external force applied to the electronic device 100, the compressive force FM-B is transmitted to the electronic device 100, causing the electronic device 100 to generate acceleration GM-B. Therefore, according to this embodiment, for example, the force transmitted to the electronic device 100 can be strengthened in stages. Therefore, according to this embodiment, for example, compared to the method where the buffer material R is only composed of the buffer sheet DB and the method where the buffer material R is only composed of the buffer sheet DC, the possibility that the shape of the force transmitted to the electronic device 100 is a sinusoidal half-wave can be increased, thereby narrowing the bandwidth of the shape of the force transmitted to the electronic device 100 in the frequency domain. Therefore, according to this embodiment, compared with the method in which the buffer material R is composed only of the buffer sheet DB and the method in which the buffer material R is composed only of the buffer sheet DC, the possibility of resonance occurring in the system including the electronic device 100 and the buffer material R can be reduced, thereby reducing the occurrence of faults in the electronic device 100.

[0138] In addition, in this embodiment, the buffer sheet DC is an example of a "first buffer sheet", the buffer sheet DB is an example of a "second buffer sheet", and the Z-axis direction is an example of "the direction of the external force applied to the electronic device".

[0139] Furthermore, in the cushioning material R involved in this embodiment, the plurality of cushioning sheets D constituting the cushioning material R includes: one or more cushioning sheets DC; and a plurality of cushioning sheets DB, which are more numerous than the cushioning sheets DC.

[0140] Therefore, according to this embodiment, the shape of the force transmitted to the electronic device 100 can be set to a sinusoidal half-wave. That is, according to this embodiment, compared with the method where the number of buffer sheets DB is less than the number of buffer sheets DC, the possibility of resonance occurring in the system including the electronic device 100 and the buffer material R can be reduced, thereby reducing the occurrence of malfunctions in the electronic device 100.

[0141] Furthermore, in the buffer material R involved in this embodiment, the buffer sheet DC includes: a flat plate QC-H1; a core QC-M, which is mounted on the plate QC-H1 and has a waveform, and the buffer sheet DB includes: a flat plate QB-H1; a core QB-M, which is mounted on the plate QB-H1 and has a waveform with more waveforms than the core QC-M in the reference length.

[0142] Therefore, according to this embodiment, the external force applied to the electronic device 100 can be buffered by the core QC-M and the core QB-M. Furthermore, according to this embodiment, since the strength of the buffer sheet DB in the Z-axis direction can be made higher than the strength of the buffer sheet DC in the Z-axis direction, the shape of the force transmitted to the electronic device 100 can be set to a sinusoidal half-wave.

[0143] In addition, in this embodiment, the liner QC-H1 is an example of a "first flat plate section", the liner QB-H1 is an example of a "second flat plate section", the core QC-M is an example of a "first waveform section", and the core QB-M is an example of a "second waveform section".

[0144] Furthermore, in the buffer material R involved in this embodiment, the buffer sheet DC includes: a flat plate QC-H1; a core QC-M, which is mounted on the plate QC-H1 and has a waveform, and the buffer sheet DB includes: a flat plate QB-H1; a core QB-M, which is mounted on the plate QB-H1 and has a lower waveform in the Z-axis direction compared to the core QC-M.

[0145] Therefore, according to this embodiment, the external force applied to the electronic device 100 can be buffered by the core QC-M and the core QB-M. Furthermore, according to this embodiment, since the strength of the buffer sheet DB in the Z-axis direction can be made higher than the strength of the buffer sheet DC in the Z-axis direction, the shape of the force transmitted to the electronic device 100 can be set to a sinusoidal half-wave.

[0146] Furthermore, in the buffer material R involved in this embodiment, the buffer sheet DB is disposed between the electronic device 100 and the buffer sheet DC.

[0147] Therefore, according to this embodiment, even if the buffer sheet DC, which has lower strength, is compressed and crushed first, the external force applied to the electronic device 100 can be buffered by the buffer sheet DB disposed on the side of the electronic device 100.

[0148] Furthermore, in this embodiment, in a graph where the vertical axis is set to the external force applied to the electronic device 100 via the buffer material R and the horizontal axis is set to the time from the start of applying the external force to the electronic device 100 via the buffer material R, the waveform of the external force applied to the electronic device 100 via the buffer material R is a sine half-wave.

[0149] Therefore, according to this embodiment, compared with the method in which the buffer material R is composed only of a buffer sheet DB and the method in which the buffer material R is composed only of a buffer sheet DC, the possibility of resonance occurring in the system including the electronic device 100 and the buffer material R can be reduced, thereby reducing the occurrence of faults in the electronic device 100.

[0150] B. Variations

[0151] The above methods can be modified in various ways. Specific modifications are illustrated below. Two or more methods selected from the following examples can be appropriately combined without contradiction. In addition, in the modifications illustrated below, elements with the same function or implementation method are represented by the symbols referenced in the above description, and their detailed descriptions are appropriately omitted.

[0152] Variation Example 1

[0153] In the above-described embodiments, when the buffer material R is viewed in a planar direction along the Z-axis, which is perpendicular to the buffer sheet D, the plurality of buffer sheets D constituting the buffer material R have approximately the same size as each other. However, this disclosure is not limited to this method. Alternatively, when the buffer material R is viewed in a planar direction along the Z-axis, the plurality of buffer sheets D constituting the buffer material R may include two buffer sheets D with different sizes from each other.

[0154] Figure 15 A cross-sectional view showing the structure of the cushioning material RV-A involved in the first mode of variation 1.

[0155] like Figure 15 As shown, the cushioning material RV-A includes a cushioning block DS-B formed by stacking multiple cushioning sheets DB, and a cushioning block DS-CV formed by stacking multiple cushioning sheets D-CV. Specifically, in the cushioning material RV-A of this modification, it is envisioned that the number of cushioning sheets DB included in the cushioning block DS-B is greater than the number of cushioning sheets D-CV included in the cushioning block DS-CV. More specifically, as an example, in the cushioning material RV-A of this modification, it is envisioned that the cushioning block DS-B includes five cushioning sheets DB, and the cushioning block DS-CV includes three cushioning sheets D-CV. In addition, in the cushioning material RV-A of this modification, the cushioning sheets DB and the cushioning sheets D-CV are arranged to extend in a direction intersecting the Z-axis direction. Furthermore, it is assumed that the cushioning material RV-A of this modification is arranged in the packaging box 2 such that the cushioning block DS-B is placed between the electronic device 100 and the cushioning block DS-CV.

[0156] Furthermore, as mentioned above, the buffer sheet DB includes liner QB-H1, liner QB-H2, and core QB-M. Similarly, the buffer sheet D-CV, like the buffer sheet DC, includes liner QC-H1, liner QC-H2, and core QC-M. That is, in this modified example, the strength of the buffer sheet DB per unit area in the Z-axis direction is higher than the strength of the buffer sheet D-CV per unit area in the Z-axis direction.

[0157] Furthermore, in this modified example, a situation is envisioned where, when the cushioning material RV-A is viewed in a planar direction along the Z-axis, the area of ​​the cushioning sheet DB is larger than the area of ​​the cushioning sheet D-CV. For example, in this modified example, a situation is envisioned where, as... Figure 15 As shown, the length LR of the buffer sheet DB in the X-axis direction is greater than the length LV of the buffer sheet D-CV in the X-axis direction. Therefore, in this modified example, the strength of the buffer sheet DB in the Z-axis direction is higher than the strength of the buffer sheet D-CV in the Z-axis direction.

[0158] Thus, the buffer material RV-A involved in this modification is constructed by including a buffer sheet D-CV and a buffer sheet DB, which has higher strength than the buffer sheet D-CV. Therefore, in the buffer material RV-A involved in this modification, when an external force is applied to the electronic device 100 via the buffer material RV-A, the force transmitted from the buffer material RV-A to the electronic device 100 can be progressively increased. Therefore, according to the buffer material RV-A involved in this modification, compared with the buffer material RV-A being constructed solely of the buffer sheet DB and the buffer material RV-A being constructed solely of the buffer sheet D-CV, the possibility of setting the shape of the force transmitted to the electronic device 100 to a sinusoidal half-wave can be increased, thereby reducing the possibility of resonance occurring in the system including the electronic device 100 and the buffer material RV-A.

[0159] Figure 16 A cross-sectional view showing the structure of the cushioning material RV-B involved in the second method of Modified Example 1.

[0160] like Figure 16As shown, the cushioning material RV-B comprises a cushioning block DS-B formed by stacking multiple cushioning sheets DB, and a cushioning block DS-BV formed by stacking multiple cushioning sheets D-BV. Specifically, in the cushioning material RV-B of this modification, it is envisioned that the number of cushioning sheets DB included in the cushioning block DS-B is greater than the number of cushioning sheets D-BV included in the cushioning block DS-BV. More specifically, in the cushioning material RV-B of this modification, as an example, it is envisioned that the cushioning block DS-B includes five cushioning sheets DB, and the cushioning block DS-BV includes three cushioning sheets D-BV. In addition, in the cushioning material RV-B of this modification, the cushioning sheets DB and D-BV are arranged to extend in a direction intersecting the Z-axis direction. Furthermore, it is assumed that the cushioning material RV-B involved in this modified example is configured in the packing box 2 in such a way that the cushioning block DS-B is placed between the electronic device 100 and the cushioning block DS-BV.

[0161] In addition, the buffer sheet D-BV has a liner QB-H1, a liner QB-H2, and a core QB-M. That is to say, in this modified example, the strength of the buffer sheet DB per unit area in the Z-axis direction is approximately the same as the strength of the buffer sheet D-BV per unit area in the Z-axis direction.

[0162] Furthermore, in this modified example, a situation is envisioned where, when the cushioning material RV-B is viewed in a planar direction along the Z-axis, the area of ​​the cushioning sheet DB is larger than the area of ​​the cushioning sheet D-BV. For example, in this modified example, a situation is envisioned where, as... Figure 16 As shown, the length LR of the buffer sheet DB in the X-axis direction is greater than the length LV of the buffer sheet D-BV in the X-axis direction. Therefore, in this modified example, the strength of the buffer sheet DB in the Z-axis direction is higher than the strength of the buffer sheet D-BV in the Z-axis direction.

[0163] Thus, the buffer material RV-B involved in this modification is constructed by including a buffer sheet D-BV and a buffer sheet DB, which has higher strength than the buffer sheet D-BV. Therefore, in the buffer material RV-B involved in this modification, when an external force is applied to the electronic device 100 via the buffer material RV-B, the force transmitted from the buffer material RV-B to the electronic device 100 can be progressively increased. Therefore, according to the buffer material RV-B involved in this modification, compared with the buffer material RV-B being constructed solely of the buffer sheet DB and the buffer material RV-B being constructed solely of the buffer sheet D-BV, the possibility of setting the shape of the force transmitted to the electronic device 100 to a sinusoidal half-wave can be increased, thereby reducing the possibility of resonance occurring in the system including the electronic device 100 and the buffer material RV-B.

[0164] Figure 17 A cross-sectional view showing the structure of the cushioning material RV-C involved in the third method of Modification Example 1.

[0165] like Figure 17 As shown, the cushioning material RV-C includes a cushioning block DS-BW formed by stacking multiple cushioning sheets D-BW, and a cushioning block DS-BV formed by stacking multiple cushioning sheets D-BV. Specifically, in the cushioning material RV-C of this modification, it is envisioned that the number of cushioning sheets D-BW included in the cushioning block DS-BW is greater than the number of cushioning sheets D-BV included in the cushioning block DS-BV. More specifically, in the cushioning material RV-C of this modification, as an example, it is envisioned that the cushioning block DS-BW includes five cushioning sheets D-BW, and the cushioning block DS-BV includes three cushioning sheets D-BV. In addition, in the cushioning material RV-C of this modification, the cushioning sheets D-BW and D-BV are arranged to extend in a direction intersecting the Z-axis direction. Furthermore, the cushioning material RV-C involved in this variation is disposed in the packing box 2 such that the cushioning sheet D-BW is placed between the electronic device 100 and the cushioning block DS-BV.

[0166] Furthermore, the buffer sheet D-BW includes buffer sheets D-B1 and D-B2, which are structural elements disposed as the same layer at approximately the same position in the Z-axis direction. Additionally, the buffer sheet D-BV includes buffer sheet D-B1. Both buffer sheets D-B1 and D-B2 have a liner QB-H1, a liner QB-H2, and a core QB-M. That is, in this modified example, the strength of the buffer sheet D-BW per unit area in the Z-axis direction is approximately the same as the strength of the buffer sheet D-BV per unit area in the Z-axis direction.

[0167] Furthermore, in this modified example, it is envisioned that when the cushioning material RV-C is viewed in a planar direction along the Z-axis, the area of ​​the cushioning sheet D-BW is larger than the area of ​​the cushioning sheet D-BV. Furthermore, in this modified example, it is envisioned that when the cushioning material RV-C is viewed in a planar direction along the Z-axis, the area of ​​the cushioning sheet D-B1 is larger than the area of ​​the cushioning sheet D-B2. For example, in this modified example, it is envisioned that... Figure 17 As shown, the length LR of the buffer sheet D-BW in the X-axis direction is greater than the length LV of the buffer sheet D-BV in the X-axis direction. Furthermore, in this variation, the following situation is envisioned: Figure 17 As shown, the length LV of buffer sheet D-B1 in the X-axis direction is greater than the length LW of buffer sheet D-B2 in the X-axis direction. Therefore, in this modified example, the strength of buffer sheet D-BW in the Z-axis direction is higher than the strength of buffer sheet D-BV in the Z-axis direction.

[0168] Thus, the buffer material RV-C involved in this modification is constructed by including a buffer sheet D-BV and a buffer sheet D-BW, which has higher strength than the buffer sheet D-BV. Therefore, in the buffer material RV-C involved in this modification, when an external force is applied to the electronic device 100 via the buffer material RV-C, the force transmitted from the buffer material RV-B to the electronic device 100 can be progressively increased. Therefore, according to the buffer material RV-C involved in this modification, compared with the buffer material RV-C being constructed solely of the buffer sheet D-BW and the buffer material RV-C being constructed solely of the buffer sheet D-BV, it is possible to increase the possibility of setting the shape of the force transmitted to the electronic device 100 to a sinusoidal half-wave, thereby reducing the possibility of resonance occurring in the system including the electronic device 100 and the buffer material RV-C.

[0169] As mentioned above, in the buffer material RV-A involved in this modified example, when the buffer material RV-A is viewed in a plane in the Z-axis direction, the area of ​​the buffer sheet DB is larger than the area of ​​the buffer sheet D-CV.

[0170] Therefore, according to this modification, for example, the force transmitted to the electronic device 100 via the buffer material RV-A can be progressively increased. Thus, according to this modification, for example, compared to the configuration where the buffer material RV-A is composed solely of buffer sheet DB, and the configuration where the buffer material RV-A is composed solely of buffer sheet D-CV, the likelihood that the shape of the force transmitted to the electronic device 100 is a sinusoidal half-wave can be increased. Consequently, according to this modification, compared to the configuration where the buffer material RV-A is composed solely of buffer sheet DB, and the configuration where the buffer material RV-A is composed solely of buffer sheet D-CV, the likelihood of resonance occurring in the system including the electronic device 100 and the buffer material RV-A can be reduced, thereby reducing the occurrence of malfunctions in the electronic device 100.

[0171] Furthermore, the buffer material RV-C involved in this modification is a buffer material RV-C formed by stacking multiple buffer sheets D that buffer the external force applied to the electronic device 100. The multiple buffer sheets D include: buffer sheet D-BV, which is arranged in a manner intersecting the Z-axis direction; and buffer sheet D-BW, which has a higher strength in the Z-axis direction than buffer sheet D-BV, and is arranged in a manner intersecting the Z-axis direction.

[0172] Therefore, according to this modification, for example, the force transmitted to the electronic device 100 via the buffer material RV-C can be progressively increased. Thus, according to this modification, for example, compared to the configuration where the buffer material RV-C is composed solely of buffer sheets D-BW and D-BV, the likelihood that the shape of the force transmitted to the electronic device 100 is a sinusoidal half-wave can be increased. Consequently, according to this modification, compared to the configuration where the buffer material RV-C is composed solely of buffer sheets D-BW and D-BV, the likelihood of resonance occurring in the system including the electronic device 100 and the buffer material RV-C can be reduced, thereby reducing the occurrence of malfunctions in the electronic device 100.

[0173] In addition, in this variant example, buffer sheet D is an example of a "buffer structure", buffer sheet D-BV is an example of a "first buffer structure", and buffer sheet D-BW is an example of a "second buffer structure".

[0174] Furthermore, in the cushioning material RV-C involved in this modified example, the cushioning sheet D-BV includes a cushioning sheet D-B1, which is arranged in a manner intersecting the Z-axis direction. The cushioning sheet D-BW includes: a cushioning sheet D-B1; and a cushioning sheet D-B2, which is arranged in the same layer as the cushioning sheet D-B1 in a manner intersecting the Z-axis direction. When the cushioning material RV-C is viewed in a plane facing the Z-axis direction, the area of ​​the cushioning sheet D-B1 is larger than the area of ​​the cushioning sheet D-B2.

[0175] Therefore, according to this modified example, for example, compared to the case where the area of ​​the buffer sheet D-B1 is smaller than the area of ​​the buffer sheet D-B2, it is possible to more effectively buffer the external force applied to the electronic device 100.

[0176] In addition, in this variant, buffer sheet D-B1 is an example of a "first unit component", and buffer sheet D-B2 is an example of a "second unit component".

[0177] Variation Example 2

[0178] In the above-described embodiments and Modification 1, examples and explanations have been given of situations where the number of buffer sheets DB in the buffer material R is greater than the number of buffer sheets DC, the number of buffer sheets DB in the buffer material RV-A is greater than the number of buffer sheets D-CV, the number of buffer sheets DB in the buffer material RV-B is greater than the number of buffer sheets D-BV, and the number of buffer sheets D-BW in the buffer material RV-C is greater than the number of buffer sheets D-BV. However, this disclosure is not limited to this method. For example, the type of the plurality of buffer sheets D constituting the buffer material R may be determined by making the ratio of the number of buffer sheets DB to the number of buffer sheets D constituting the buffer material R a predetermined ratio α. Here, the value α preferably satisfies "0.5 ≤ α < 1", and more preferably satisfies "0.6 < α < 0.8".

[0179] Similarly, the type of the multiple buffer sheets D constituting buffer material RV-A can be determined by making the ratio of the number of buffer sheets DB to the number of buffer sheets D constituting buffer material RV-A a predetermined ratio α. Furthermore, the type of the multiple buffer sheets D constituting buffer material RV-B can be determined by making the ratio of the number of buffer sheets DB to the number of buffer sheets D constituting buffer material RV-B a predetermined ratio α. Additionally, the type of the multiple buffer sheets D constituting buffer material RV-C can be determined by making the ratio of the number of buffer sheets D-BW to the number of buffer sheets D constituting buffer material RV-C a predetermined ratio α.

[0180] Variation Example 3

[0181] In the above-described embodiments and variations 1 and 2, it has been illustrated and described how multiple buffer sheets DB are disposed between multiple buffer sheets DC and electronic device 100 in buffer material R, how multiple buffer sheets DB are disposed between multiple buffer sheets D-CV and electronic device 100 in buffer material RV-A, how multiple buffer sheets DB are disposed between multiple buffer sheets D-BV and electronic device 100 in buffer material RV-B, or how multiple buffer sheets D-BW are disposed between multiple buffer sheets D-BV and electronic device 100 in buffer material RV-C, but this disclosure is not limited to this method. For example, it can also be configured such that multiple buffer sheets DC are disposed between multiple buffer sheets DB and electronic device 100 in buffer material R, multiple buffer sheets D-CV are disposed between multiple buffer sheets DB and electronic device 100 in buffer material RV-A, multiple buffer sheets D-BV are disposed between multiple buffer sheets DB and electronic device 100 in buffer material RV-B, or multiple buffer sheets D-BV are disposed between multiple buffer sheets D-BW and electronic device 100 in buffer material RV-C. Furthermore, as... Figure 18 As shown, it can also be configured such that, in the buffer material R, some or all of the buffer sheets DC are arranged between the multiple buffer sheets DB; in the buffer material RV-A, some or all of the buffer sheets D-CV are arranged between the multiple buffer sheets DB; in the buffer material RV-B, some or all of the buffer sheets D-BV are arranged between the multiple buffer sheets DB; and in the buffer material RV-C, some or all of the buffer sheets D-BV are arranged between the multiple buffer sheets D-BW.

[0182] Variation Example 4

[0183] In the above-described embodiments and variations 1 to 3, the case where the buffer sheet DB has liner QB-H1 and liner QB-H2, and the buffer sheet DC has liner QC-H1 and liner QC-H2, has been illustrated and described. However, this disclosure is not limited to this method. For example, as Figure 19 As shown, the buffer sheet DB only needs to have at least one of the liner QB-H1 and the liner QB-H2. In addition, the buffer sheet DC only needs to have at least one of the liner QC-H1 and the liner QC-H2.

[0184] Variation Example 5

[0185] In the above embodiments and variations 1 to 4, the case where the cushioning sheet D is corrugated cardboard has been illustrated and described, but this disclosure is not limited to this method. For example, as the cushioning sheet D, a cushioning material other than corrugated cardboard, such as bubble wrap, may also be used.

Claims

1. A cushioning material, characterized in that, It is a cushioning material formed by stacking multiple thin buffer sheets, which cushion external forces applied to electronic devices. The plurality of buffer sheets include: The first buffer sheet is configured to intersect the direction of the external force applied to the electronic device; A second buffer sheet, wherein the strength of the second buffer sheet in the direction of the external force applied to the electronic device is higher than that of the first buffer sheet, and is configured to intersect the direction of the external force applied to the electronic device. The first buffer sheet includes: The first plate-shaped portion; A first waveform section is mounted on the first flat plate section and has a waveform. The second buffer sheet includes: The second plate portion is flat and plate-shaped; The second waveform section is mounted on the second flat plate section and has more waveforms over a reference length compared to the first waveform section. The plurality of buffer sheets include: One or more of the first buffer sheets; There are multiple second buffer sheets, which are more numerous than the first buffer sheets.

2. The cushioning material as described in claim 1, characterized in that, The second waveform portion has a lower waveform compared to the first waveform portion in the direction of the external force applied to the electronic device.

3. The cushioning material as described in claim 1, characterized in that, The second buffer sheet is disposed between the electronic device and the first buffer sheet.

4. The cushioning material as described in claim 1, characterized in that, When the cushioning material is viewed in planar orientation toward the direction of the external force applied to the electronic device, The area of ​​the second buffer sheet is larger than that of the first buffer sheet.

5. A cushioning material, characterized in that, It is a cushioning material formed by stacking multiple cushioning structures, which buffer external forces applied to electronic devices. The plurality of buffer structures include: The first buffer structure is configured to intersect the direction of the external force applied to the electronic device; A second buffer structure, wherein the strength of the second buffer structure in the direction of the external force applied to the electronic device is higher than that of the first buffer structure, and is configured to intersect the direction of the external force applied to the electronic device. The first buffer structure includes a first unit component. The first unit component is configured such that it intersects the direction of the external force applied to the electronic device. The second buffer structure includes: The first unit component; The second unit component, located in the same layer as the first unit component, is configured in a manner that intersects the direction of the external force applied to the electronic device. When the cushioning material is viewed in planar orientation toward the direction of the external force applied to the electronic device, The area of ​​the first unit component is larger than the area of ​​the second unit component.

6. The cushioning material as described in claim 1 or 5, characterized in that, In a graph where the vertical axis represents the external force applied to the electronic device and the horizontal axis represents the time from the start of applying the external force to the electronic device, The waveform representing the external force applied to the electronic device is called a sine half-wave.

7. A packaged item, characterized in that, have: Electronic devices; A packing box for housing the electronic equipment; The cushioning material is composed of multiple stacked cushioning sheets that buffer external forces applied to the electronic device. The plurality of buffer sheets include: The first buffer sheet is configured to intersect the direction of the external force applied to the electronic device; A second buffer sheet, wherein the strength of the second buffer sheet in the direction of the external force applied to the electronic device is higher than that of the first buffer sheet, and is configured to intersect the direction of the external force applied to the electronic device. The first buffer sheet includes: The first plate-shaped portion; A first waveform section is mounted on the first flat plate section and has a waveform. The second buffer sheet includes: The second plate portion is flat and plate-shaped; The second waveform section is mounted on the second flat plate section and has more waveforms over a reference length compared to the first waveform section. The plurality of buffer sheets include: One or more of the first buffer sheets; There are multiple second buffer sheets, which are more numerous than the first buffer sheets.

8. The packaged items as described in claim 7, characterized in that, The second waveform portion has a lower waveform compared to the first waveform portion in the direction of the external force applied to the electronic device.

9. The packaged items as described in claim 7, characterized in that, The second buffer sheet is disposed between the electronic device and the first buffer sheet.

10. The packaged articles as described in claim 7, characterized in that, When the cushioning material is viewed in planar orientation toward the direction of the external force applied to the electronic device, The area of ​​the second buffer sheet is larger than that of the first buffer sheet.

11. The packaged items as described in claim 7, characterized in that, In a graph where the vertical axis represents the external force applied to the electronic device and the horizontal axis represents the time from the start of applying the external force to the electronic device, The waveform representing the external force applied to the electronic device is called a sine half-wave.

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