A silicon wafer polishing composition and its application

Abstract

The present invention discloses a silicon wafer polishing composition and its application. The silicon wafer polishing composition uses silica sol as a polishing abrasive, an organic base as a rate promoter, and an aryl positive ion compound and a water-soluble modified silicone oil are added. By simultaneously adding an aryl positive ion compound and a water-soluble modified silicone oil to the silicon wafer polishing composition, the present invention can quickly remove the corrosion products on the surface of the silicon wafer, reduce the corrosion residue on the surface of the silicon wafer, lower the etching rate of the silicon wafer surface, and is more conducive to subsequent cleaning.

Description

Technical Field

[0001] The invention relates to the technical field of chemical mechanical polishing, and in particular to a silicon wafer polishing composition and application thereof. Background Art

[0002] Silicon wafer CMP generally uses alkaline silica polishing liquid, which uses the chemical corrosion reaction between alkali and silicon to generate soluble silicates, and then polishes and removes the reaction products in time through the adsorption of small, soft, large specific surface area, negatively charged SiO2 particles and the mechanical friction between the polishing pad and the silicon wafer, thereby achieving the purpose of removing the damaged layer and contaminant impurities on the surface of the wafer. However, with the increase in the dilution ratio of the silicon wafer polishing liquid, the content of chemical additives in the polishing composition increases year-on-year, and due to the limitation of cost and solid content of silica sol, the increase ratio of abrasive in the polishing composition is limited, resulting in the chemical etching effect in the CMP process being significantly higher than mechanical grinding, which will cause etching marks or visible corrosion points (also called bright spots) on the surface of the silicon wafer after polishing.

[0003] At present, the method of inhibiting the etching of silicon wafer surface is generally adopted to reduce the chemical corrosion of silicon wafer surface. For example, Chinese patent CN110402479A effectively reduces the static etching rate of silicon wafer by adding water-soluble polymers such as hydroxyethyl cellulose to the silicon wafer rough polishing liquid. However, the reduction of static etching rate cannot effectively characterize the corrosion state of silicon wafer surface during dynamic grinding. European patent EP1925647A2 effectively reduces the removal rate of polysilicon by adding modified silicone oil during polysilicon polishing, and improves the removal rate selection ratio between polysilicon and silicon oxide. However, it does not reflect the corrosion state of modified silicone oil on the surface of polysilicon wafer after polishing.

[0004] Therefore, there is still a need for a polishing composition that can further reduce the corrosion of the silicon wafer surface without significantly inhibiting the polishing rate. Summary of the invention

[0005] In order to solve the above technical problems, the present invention provides a silicon wafer polishing composition. By adding aromatic cation compounds and water-soluble modified silicone oil into the silicon wafer polishing composition, it is possible to effectively reduce corrosion residues on the surface of the silicon wafer and reduce the corrosion rate of the silicon wafer, thereby further improving the surface quality of the silicon wafer after polishing.

[0006] Another object of the present invention is to provide application of the silicon wafer polishing composition.

[0007] In order to achieve the above-mentioned object of the invention, the present invention adopts the following technical solution:

[0008] A silicon wafer polishing composition, which uses silica hydrosol as a polishing abrasive, an organic base as a rate promoter, and an aryl positive ion compound and a water-soluble modified silicone oil are added.

[0009] In a specific embodiment, based on the total mass of the polishing composition, it includes the following components in weight percentage:

[0010]

[0011] The balance is deionized water.

[0012] In a specific embodiment, the particle size of the silica hydrosol is 10 - 120 nm, preferably 30 - 90 nm, and the solid content is 10 - 50 wt%, preferably 20 - 40 wt%.

[0013] In a specific embodiment, the rate promoter is selected from at least one of methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, propylenediamine, butylenediamine, ethyl ethylenediamine, monoethanolamine, N-(β-aminoethyl)ethanolamine, hexamethylenediamine, diethylenetriamine, trihexylenetetramine, 1-(2-aminoethyl)piperazine, N-methylpiperazine, piperazine, imidazole, methylimidazole, 1,2,4-triazole, 4-amino-1,2,4-triazole, guanidine carbonate, guanidine hydrochloride, guanidine nitrate, tetramethylammonium hydroxide, tetramethylammonium chloride, tetramethylammonium bromide, tetramethylammonium fluoride, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium chloride, tetraethylammonium bromide, tetraethylammonium fluoride; preferably tetraethylammonium hydroxide.

[0014] In a specific embodiment, the aryl positive ion compound is a compound in which the main body containing an aryl group can be ionized or protonated in an aqueous solution to form a compound with at least one positive charge.

[0015] In a preferred embodiment, the aryl cation compound is selected from at least one of benzimidazole, quinoline, aniline, 2-hydroxyaniline, benzylamine, 4-hydroxybenzylamine, phenethylamine, 2-amino-1-phenylethanol, phenylpropylamine, 4-aminobiphenyl, benzidine, 4-chloro-o-toluidine, 2-naphthylamine, o-aminoazotoluene, 5-nitro-o-toluidine, 4-chloroaniline, 4-diaminoanisole, 3,3'-dichlorobenzidine, 3,3'-dimethylbenzidine, 2-methylaniline, 2,4-diaminotoluene, 2,4,5-trimethylaniline, 2-methoxyaniline, 4-aminoazobenzene, 2,4-dimethylaniline, 2,6-dimethylaniline, benzyltrimethylammonium chloride, benzyltrimethylammonium hydroxide, benzyltriethylammonium chloride, benzyltriethylammonium hydroxide, phenyltrimethylammonium chloride, phenyltrimethylammonium hydroxide; preferably at least one of benzimidazole, 2-hydroxyaniline, and benzyltrimethylammonium chloride.

[0016] In a specific embodiment, the water-soluble modified silicone oil is selected from at least one of polyether-modified silicone oil, amino-modified silicone oil, epoxy-modified silicone oil, carboxyl-modified silicone oil, alcohol hydroxyl-modified silicone oil, phenolic hydroxyl-modified silicone oil, mercapto-modified silicone oil, poly(diorganosiloxane)-polyether block copolymer modified silicone oil, alkyl and polyether co-modified silicone oil, alkyl ether polyether silicone oil, epoxy group polyether silicone oil, amino polyether block silicone oil, glycerol ether group silicone oil, phosphate group silicone oil, sugar group polyether silicone oil, betaine group silicone oil; preferably polyether-modified silicone oil, amino-modified silicone oil, epoxy-modified silicone oil.

[0017] In a specific embodiment, the pH value regulator is selected from at least one of hydrogen chloride, nitric acid, sulfuric acid, phosphoric acid, sodium hydroxide, potassium hydroxide, lithium hydroxide, tetramethylammonium hydroxide, imidazole, piperazine, methylimidazole, 1,2,4-triazole, tetramethylguanidine, formic acid, acetic acid, propionic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, oxalic acid, butanedioic acid, malic acid, gluconic acid, alanine, glycine, lactic acid, trifluoroacetic acid, ethylenediaminetetraacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, triethylenediamine, propylenediaminetetraacetic acid, hydroxyethyl ethylenediamine, hydroxyethyl ethylenediamine triacetic acid, pyrophosphoric acid, 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotrimethylenephosphonic acid, ethylenediaminetetramethylenephosphonic acid, diethylenetriaminepentamethylenephosphonic acid, ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, methane hydroxyphosphonic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid or its salts; preferably at least one of citric acid, malonic acid, tartaric acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, hydroxyethyl ethylenediamine triacetic acid; more preferably any one of oxalic acid, hydrogen chloride, potassium hydroxide, tetramethylammonium hydroxide.

[0018] In a specific embodiment, the pH value of the silicon wafer polishing composition is controlled between 9.5 and 12.5.

[0019] On the other hand, the foregoing application of the silicon wafer polishing composition in chemical mechanical polishing of silicon wafers.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] After polishing with the prior art silicon wafer polishing composition, corrosion products that are difficult to remove by cleaning will remain on the surface of the silicon wafer. By synergistically adding an aryl positive ion compound and a water-soluble modified silicone oil to the conventional silicon wafer polishing composition, the present invention can quickly remove the corrosion products on the surface of the silicon wafer, reduce the corrosion residue on the surface of the silicon wafer, lower the etching rate of the silicon wafer surface, and is more conducive to subsequent cleaning. Compared with the prior art, it has significant advantages. Detailed Embodiments

[0022] For a better understanding of the technical solution of the present invention, the following examples will further illustrate the method provided by the present invention. However, the present invention is not limited to the listed examples, and should also include any other well-known changes within the scope of the claims of the present invention.

[0023] A silicon wafer polishing composition of the present invention includes adding an aryl positive ion compound and a water-soluble modified silicone oil on the basis of the components of the existing polishing liquid (such as abrasives, rate accelerators, pH regulators, etc.) to achieve the purpose of effectively reducing the corrosion residue on the surface of the silicon wafer and reducing the corrosion rate of the silicon wafer, thereby further improving the surface quality of the silicon wafer after polishing.

[0024] Among them, the silicon wafer polishing composition uses, for example, silica hydrosol as a polishing abrasive. The preparation method of the silica hydrosol has no restrictions and can adopt conventional methods in the art. The particle size of the silica hydrosol is 30 - 120 nm, for example, including but not limited to 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm. The solid content (mass fraction) of the silica hydrosol is 10 - 50 wt%, for example, including but not limited to 10%, 20%, 30%, 40%, 50%. Based on the total mass of the polishing composition, the addition amount of the silica hydrosol is 1% - 80%, for example, including but not limited to 1%, 5%, 8%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, and preferably 10% - 40%.

[0025] As the rate promoter, for example, an organic base, it may be selected from at least any one of methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, propylenediamine, butylenediamine, ethyl ethylenediamine, monoethanolamine, N-(β-aminoethyl)ethanolamine, hexamethylenediamine, diethylenetriamine, trihexylenetetramine, 1-(2-aminoethyl)piperazine, N-methylpiperazine, piperazine, imidazole, methylimidazole, 1,2,4-triazole, 4-amino-1,2,4-triazole, guanidine carbonate, guanidine hydrochloride, guanidine nitrate, tetramethylammonium hydroxide, tetramethylammonium chloride, tetramethylammonium bromide, tetramethylammonium fluoride, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium chloride, tetraethylammonium bromide, tetraethylammonium fluoride; preferably tetramethylammonium hydroxide. Based on the total mass of the polishing composition, the addition amount of the rate promoter is 0.5%-20%, for example, including but not limited to 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, and preferably 1-5%.

[0026] As the pH regulator, it can be an acid or a base commonly used in the art, such as selected from hydrogen chloride, nitric acid, sulfuric acid, phosphoric acid, sodium hydroxide, potassium hydroxide, lithium hydroxide, tetramethylammonium hydroxide, imidazole, piperazine, methylimidazole, 1,2,4-triazole, tetramethylguanidine, formic acid, acetic acid, propionic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, oxalic acid, butanedioic acid, malic acid, gluconic acid, alanine, glycine, lactic acid, trifluoroacetic acid, ethylenediaminetetraacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, triethylenediamine, propylenediaminetetraacetic acid, hydroxyethyl ethylenediamine, hydroxyethyl ethylenediaminetriacetic acid, pyrophosphoric acid, 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotrimethylenephosphonic acid, ethylenediaminetetramethylenephosphonic acid, diethylenetriaminepentamethylenephosphonic acid, ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, methane hydroxyphosphonic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid or their salts, and at least any one of them is preferred, preferably at least any one of citric acid, malonic acid, tartaric acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, hydroxyethyl ethylenediaminetriacetic acid, and more preferably any one of oxalic acid, hydrogen chloride, potassium hydroxide, tetramethylammonium hydroxide; further preferably potassium hydroxide or oxalic acid. Based on the total mass of the polishing composition, the addition amount of the pH regulator is 0.1%-5%, such as including but not limited to 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, and preferably 0.5-2%. By adding the pH regulator, the pH value of the silicon wafer polishing composition is adjusted to be between 9.5 and 12.5, such as 9.5, 10, 10.5, 11, 11.5, 12, 12.5.

[0027] In the present invention, the aryl cation compound is a compound in which the main body containing an aryl group can be ionized or protonated in an aqueous solution to form a compound with at least one positive charge. For example, it is selected from at least any one of benzimidazole, quinoline, aniline, 2-hydroxyaniline, benzylamine, 4-hydroxybenzylamine, phenethylamine, 2-amino-1-phenylethanol, phenylpropylamine, 4-aminobiphenyl, benzidine, 4-chloro-o-toluidine, 2-naphthylamine, o-aminoazotoluene, 5-nitro-o-toluidine, 4-chloroaniline, 4-diaminoanisole, 3,3'-dichlorobenzidine, 3,3'-dimethylbenzidine, 2-methylaniline, 2,4-diaminotoluene, 2,4,5-trimethylaniline, 2-methoxyaniline, 4-aminoazobenzene, 2,4-dimethylaniline, 2,6-dimethylaniline, benzyltrimethylammonium chloride, benzyltrimethylammonium hydroxide, benzyltriethylammonium chloride, benzyltriethylammonium hydroxide, phenyltrimethylammonium chloride, phenyltrimethylammonium hydroxide; preferably at least any one of benzimidazole, 2-hydroxyaniline, and benzyltrimethylammonium chloride. Based on the total mass of the polishing composition, the addition amount of the aryl cation compound is 0.05% - 1%, for example, including but not limited to 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, and preferably 0.1 - 0.5%.

[0028] In the present invention, the purpose of adding the aryl cation compound is to reduce the generation of surface corrosion after silicon wafer polishing. The specific mechanism is not yet clear and can be considered as follows: The aryl cation compound can be adsorbed on the surface of the silicon wafer or silicon oxide particles through its electrostatic interaction and hydrophobic interaction, reducing the repulsive force between the silicon oxide particles and the silicon wafer, thereby increasing the mechanical grinding effect. However, adding only the aryl cation compound cannot significantly reduce the surface corrosion residue of the silicon wafer during CMP. The reason may be the relatively low molecular weight and the limitation of the addition concentration range.

[0029] In the present invention, the water-soluble modified silicone oil is selected from at least one of polyether-modified silicone oil, amino-modified silicone oil, epoxy-modified silicone oil, carboxyl-modified silicone oil, hydroxyl-modified silicone oil, mercapto-modified silicone oil, poly(diorganosiloxane)-polyether block copolymer modified silicone oil, alkyl and polyether co-modified silicone oil, alkyl ether polyether silicone oil, epoxy group polyether silicone oil, amino polyether block silicone oil, glycerol ether group silicone oil, phosphate group silicone oil, sugar group polyether silicone oil, betaine group silicone oil, preferably polyether-modified silicone oil, amino-modified silicone oil, epoxy-modified silicone oil. Based on the total mass of the polishing composition, the addition amount of the water-soluble modified silicone oil is 0.05% - 1%, for example, including but not limited to 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, preferably 0.1 - 0.5%.

[0030] In the present invention, the synergistic addition of water-soluble modified silicone oil and aryl positive ion compound can significantly reduce the residue after CMP on the silicon wafer surface. The specific mechanism is not yet clear and can be considered as follows: The water-soluble modified silicone oil may effectively shield the electrostatic repulsion between the silica abrasive and the silicon wafer surface due to its relatively high molecular weight and strong adsorption on the silicon wafer surface, while the aryl positive ion can further strengthen the above effect. The synergistic addition of the two can effectively reduce the surface corrosion residue after CMP of the silicon wafer.

[0031] The present invention will be further explained and illustrated below with more specific examples, but it does not constitute any limitation.

[0032] In the following examples, the instruments and parameters used for the polishing test of the silicon wafer substrate material are shown in Table 1. The removal rate is calculated by weighing the mass difference before and after polishing using a balance. The corrosion residue situation on the silicon wafer surface is evaluated in the following way: After the polishing is completed, randomly select a cleaned and dried silicon wafer and place it under a microscope for detection (magnification 20 times), and count the number of corrosion marks (the corrosion marks are brighter under the microscope and cannot be removed by cleaning, and the corrosion marks include dot-shaped and other shaped corrosion imprints).

[0033] Calculation method of silicon wafer etching rate: Immerse a 2-inch silicon wafer into 1 L of the above-diluted polishing composition for 1 hour, control the composition temperature at 60 degrees Celsius through a water bath, weigh the mass difference of the 2-inch wafer before and after, and calculate the corrosion rate.

[0034] Measure the surface roughness Ra of the polished silicon wafer using an atomic force microscope.

[0035] Table 1 Instruments and parameters used for the polishing test

[0036] Polishing machine model Japan's Speedfam - 36B Polishing pressure <![CDATA[350 g / cm 2 > Flow rate of the polishing composite 5L / min Polishing pad Suba 800 Polishing time 15min Wafer diameter 300mm Rotational speed of the polishing head / platen 30 / 50rpm

[0037] Unless otherwise specified, the raw materials and reagents used in the examples and comparative examples of the present invention are all obtained through commercial channels. Among them, the water-soluble modified silicone oil is mainly purchased from Dongguan Jianmeng Chemical Co., Ltd., Shengbang Organosilicon Technology Co., Ltd., Shin-Etsu Chemical, etc. Without special instructions, the purity is analytical pure or above (except for silica sol).

[0038] The preparation method of the polishing composition is as follows: each component is mixed evenly in an aqueous solution, and there is no specific requirement for the addition order.

[0039] The detailed components of the examples and comparative examples are shown in Table 2, where silica sol (60nm, 40wt%) represents silica sol with an average particle size of 60nm and a solid content of 40%, abbreviated as (60nm, 40wt%).

[0040] Table 2. Components of Examples and Comparative Examples

[0041]

[0042]

[0043] The above examples and comparative example formulations are all stock solutions of the silicon wafer polishing composition. Before use, they can be diluted with deionized water in different ratios according to needs. In the above experiments, the polishing liquid was diluted with deionized water at a mass ratio of 1:20 before use. The percentages of the polishing compositions of each example and comparative example are shown in Table 2, and the performance tests were carried out with the polishing compositions of each example and comparative example. The results are shown in Table 3:

[0044] Table 3. Polishing Test Results

[0045]

[0046] From the comparison of the above data, it can be seen that by using the silicon wafer polishing composition of the present invention, on the basis of maintaining a high silicon wafer removal rate, the corrosion marks on the surface of the silicon wafer after polishing can be further reduced or even eliminated, and the surface quality of the silicon wafer after polishing can be improved. It can be found that the removal rates in the examples are all higher than 0.7μm / min, the number of corrosion marks is less than 3, the etching rate is less than 0.1mg / h, and the surface roughness Ra of the silicon wafer after polishing is less than 1nm. Combining Example 1 and Comparative Examples 1-4, it can be seen that the synergistic addition of aryl positive ion compounds and water-soluble modified silicone oil can significantly reduce the number of corrosion marks on the surface of the silicon wafer after polishing and improve the polishing quality of the wafer on the basis of maintaining a high polishing rate. From Example 1 and Comparative Example 5, it can be seen that the use of aryl negative ion compounds is not conducive to reducing the corrosion marks on the surface of the silicon wafer. From Example 1 and Comparative Example 6, it can be seen that only reducing the etching rate of the silicon wafer surface by a polymer cannot significantly reduce the number of corrosion marks on the silicon wafer surface.

[0047] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. Those skilled in the art can understand that under the teaching of this specification, some modifications or adjustments can be made to the present invention. These modifications or adjustments should also be within the scope defined by the claims of the present invention.

Claims

1. A silicon wafer polishing composition, characterized in that, The silicon wafer polishing composition uses silica hydrosol as the polishing abrasive, an organic base as the rate promoter, and adds an aryl positive ion compound and a water-soluble modified silicone oil; Based on the total mass of the polishing composition, it includes the following components in weight percentages: Silica hydrosol 1% - 80%; Rate promoter 0.5% - 20%; Aryl positive ion compound 0.05% - 1%; Water-soluble modified silicone oil 0.05% - 1%; pH regulator 0.1% - 5%; The balance is deionized water; The aryl positive ion compound is selected from at least any one of benzimidazole, quinoline, aniline, 2-hydroxyaniline, benzylamine, 4-hydroxybenzylamine, phenethylamine, 2-amino-1-phenylethanol, phenylpropylamine, 4-aminobiphenyl, benzidine, 4-chloro-o-toluidine, 2-naphthylamine, o-aminoazotoluene, 5-nitro-o-toluidine, 4-chloroaniline, 4-diaminoanisole, 3,3'-dichlorobenzidine, 3,3'-dimethylbenzidine, 2-methylaniline, 2,4-diaminotoluene, 2,4,5-trimethylaniline, 2-methoxyaniline, 4-aminoazobenzene, 2,4-dimethylaniline, 2,6-dimethylaniline, benzyltrimethylammonium chloride, benzyltrimethylammonium hydroxide, benzyltriethylammonium chloride, benzyltriethylammonium hydroxide, phenyltrimethylammonium chloride, phenyltrimethylammonium hydroxide; The water-soluble modified silicone oil is selected from at least any one of polyether-modified silicone oil, amino-modified silicone oil, epoxy-modified silicone oil, carboxyl-modified silicone oil, alcohol hydroxyl-modified silicone oil, phenolic hydroxyl-modified silicone oil, mercapto-modified silicone oil, polydiorganosiloxane-polyether block copolymer-modified silicone oil, alkyl and polyether co-modified silicone oil, alkyl ether polyether silicone oil, epoxy group polyether silicone oil, amino polyether block silicone oil, glycerol ether group silicone oil, phosphate group silicone oil, sugar group polyether silicone oil, betaine group silicone oil; The pH value of the silicon wafer polishing composition is controlled between 9.5 and 12.

5.

2. The silicon wafer polishing composition according to claim 1, wherein Based on the total mass of the polishing composition, it includes the following components in weight percentages: Silica hydrosol 10% - 40%; Rate promoter 1% - 5%; Aryl positive ion compound 0.1 - 0.5%; Water-soluble modified silicone oil 0.1 - 0.5%; pH regulator 0.5 - 2%; The balance is deionized water.

3. The silicon wafer polishing composition according to claim 1 or 2, characterized in that, The particle size of the silica hydrosol is 10 - 120 nm, and the solid content is 10 - 50 wt%.

4. The silicon wafer polishing composition according to claim 3, wherein The particle size of the silica hydrosol is 30 - 90 nm, and the solid content is 20 - 40 wt%.

5. The silicon wafer polishing composition according to claim 1 or 2, characterized in that, The rate promoter is selected from at least one of methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, propylenediamine, butylenediamine, ethyl ethylenediamine, monoethanolamine, N-(β-aminoethyl)ethanolamine, hexamethylenediamine, diethylenetriamine, trihexylenetetramine, 1-(2-aminoethyl)piperazine, N-methylpiperazine, piperazine, imidazole, methylimidazole, 1,2,4-triazole, 4-amino-1,2,4-triazole, guanidine carbonate, guanidine hydrochloride, guanidine nitrate, tetramethylammonium hydroxide, tetramethylammonium chloride, tetramethylammonium bromide, tetramethylammonium fluoride, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium chloride, tetraethylammonium bromide, tetraethylammonium fluoride.

6. The silicon wafer polishing composition according to claim 5, wherein The rate promoter is tetramethylammonium hydroxide.

7. The silicon wafer polishing composition according to claim 1, characterized in that The aryl cation compound is at least one of benzimidazole, 2-hydroxyaniline, and benzyltrimethylammonium chloride.

8. The silicon wafer polishing composition according to claim 1, wherein The water-soluble modified silicone oil is polyether-modified silicone oil, amino-modified silicone oil, or epoxy-modified silicone oil.

9. The silicon wafer polishing composition according to claim 1 or 2, characterized in that, The pH regulator is selected from at least one of hydrogen chloride, nitric acid, sulfuric acid, phosphoric acid, sodium hydroxide, potassium hydroxide, lithium hydroxide, tetramethylammonium hydroxide, imidazole, piperazine, methylimidazole, 1,2,4-triazole, tetramethylguanidine, formic acid, acetic acid, propionic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, oxalic acid, succinic acid, malic acid, gluconic acid, alanine, glycine, lactic acid, trifluoroacetic acid, ethylenediaminetetraacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, triethylenediamine, propylenediaminetetraacetic acid, hydroxyethyl ethylenediamine, hydroxyethyl ethylenediaminetriacetic acid, pyrophosphoric acid, 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotrimethylenephosphonic acid, ethylenediaminetetramethylenephosphonic acid, diethylenetriaminepentamethylenephosphonic acid, ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, methane hydroxyphosphonic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid or its salts.

10. The silicon wafer polishing composition according to claim 9, wherein, The pH regulator is at least one of citric acid, malonic acid, tartaric acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and hydroxyethyl ethylenediaminetriacetic acid.

11. The silicon wafer polishing composition according to claim 9, characterized in that, The pH regulator is any one of oxalic acid, hydrogen chloride, potassium hydroxide, and tetramethylammonium hydroxide.

12. Use of the silicon wafer polishing composition according to any one of claims 1 to 11 in chemical mechanical polishing of silicon wafers.

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