Method for manufacturing light emitting device and light emitting device

Abstract

The manufacturing method of the light emitting device of the present application includes: a first light emitting element forming step of forming a first light emitting element including a first light emitting layer on a substrate; and a first light emitting layer forming step of forming a laminate of a lower layer resist reversal layer, a light emitting material layer including a light emitting material of the first light emitting layer, and an upper layer positive resist, in this order from the substrate side (steps S41-S43), and patterning the laminate (steps S44-S45), thereby forming the first light emitting layer.

Description

Technical Field

[0001] The present invention relates to a light-emitting device having multiple light-emitting elements and a method for manufacturing the light-emitting device. Background Technology

[0002] Patent document 1 discloses a method for patterning a layer containing quantum dots by mixing quantum dots into a photoresist and using photolithography. Existing technical documents Patent documents

[0003] Patent Document 1: US2017 / 0176854A1 Summary of the Invention The technical problem to be solved by the present invention

[0004] In Patent Document 1, layers containing quantum dots of various colors are repeatedly formed over the entire surface and patterned using photolithography. Therefore, at locations where the quantum dot-containing layer is removed, the quantum dots remain as residue. This leads to a problem of color mixing. Technical solutions for solving technical problems

[0005] To solve the above problems, the manufacturing method of the light-emitting device disclosed herein is as follows: a light-emitting element forming step comprising forming a first light-emitting element including a first light-emitting layer on a substrate, the light-emitting element forming step comprising a first light-emitting layer forming step, wherein the first light-emitting layer forming step forms the first light-emitting layer by patterning a first laminate, wherein the first laminate comprises, sequentially stacked from the substrate side, a first reverse resist, a first light-emitting material layer comprising the light-emitting material of the first light-emitting layer, and a first positive resist.

[0006] To solve the above problems, the light-emitting device disclosed herein includes: a substrate; and a first light-emitting element on the substrate, which sequentially comprises a first lower electrode, a first light-emitting layer and a first upper electrode from the substrate side; the first light-emitting element further comprises a photosensitive resin layer between the first lower electrode and the first light-emitting layer, the photosensitive resin layer comprising at least one of compounds selected from the group consisting of compounds represented by the following structural formulas (1) to (3), and at least one of the group consisting of aromatic hydrocarbons having hydroxyl groups, 1-hydroxyethyl-2-alkylimidazoline and shellac.

[0007] [Chemistry 1] Here, R1 and R2 each independently represent substituted or unsubstituted hydrocarbon groups. Beneficial effects

[0008] According to one aspect of this disclosure, it is also possible to reduce the amount of luminescent material from the first luminescent layer mixed as residue into areas where the first luminescent layer does not form. Attached Figure Description

[0009] Figure 1 This is a flowchart illustrating an example of a method for manufacturing a display device according to the present invention. Figure 2 This is a schematic top view illustrating an example of the configuration of the display device involved in the present invention. Figure 3 This is a schematic cross-sectional view illustrating an example of the configuration of the display area of ​​the display device involved in the present invention. Figure 4 This is a schematic cross-sectional view illustrating an example of the configuration of a light-emitting element layer in a display device according to an embodiment of the present invention. Figure 5 This indicates that it is formed on the substrate. Figure 4 The diagram shows a simplified flowchart of one example of the process steps for a light-emitting element layer. Figure 6 This indicates that inclusion is being performed. Figure 5 The diagram shows a simplified flowchart of the process for forming the red luminescent layer and the process for forming a green luminescent layer of 35g. Figure 7 This indicates that inclusion is being performed. Figure 5 The diagram shows a simplified flowchart of the processes performed during the formation of the blue luminescent layer. Figure 8 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 9 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 10 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 11 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 12 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 13 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 14 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 15 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 16 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 17 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 18 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 19 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 20 This is a schematic cross-sectional view illustrating another example of the configuration of the light-emitting element layer in a display device according to an embodiment of the present invention. Figure 21 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of another example of the process of one example of the light-emitting element layer shown. Figure 22 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of another example of the process of one example of the light-emitting element layer shown. Figure 23 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of another example of the process of one example of the light-emitting element layer shown. Figure 24 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of another example of the process of one example of the light-emitting element layer shown. Figure 25 This indicates that it is formed on the substrate. Figure 4 A schematic cross-sectional view of another example of the process of one example of the light-emitting element layer shown. Figure 26 This is a schematic cross-sectional view illustrating another example of the configuration of the light-emitting element layer in a display device according to an embodiment of the present invention. Figure 27 This indicates that it is formed on the substrate. Figure 26 The diagram shows a simplified flowchart of one example of the process steps for a light-emitting element layer. Figure 28 This is a schematic cross-sectional view illustrating another example of the configuration of the light-emitting element layer in a display device according to an embodiment of the present invention. Figure 29 It is shown Figure 4 A schematic energy level diagram of an example of the band gap of the hole transport layer, the lower resin layer, the light-emitting layer, and the electron transport layer of the light-emitting element layer shown. Figure 30 It is shown Figure 20 A schematic energy level diagram of an example of the band gap of the hole transport layer, the lower resin layer, the light-emitting layer, and the electron transport layer of the light-emitting element layer shown. Figure 31 It is shown Figure 20 A schematic energy level diagram of an example of the band gap of the hole transport layer, the lower resin layer, the light-emitting layer, and the electron transport layer of the light-emitting element layer shown. Figure 32 It is shown Figure 26 A schematic energy level diagram of an example of the band gap of the hole transport layer, the lower resin layer, the light-emitting layer, and the electron transport layer of the light-emitting element layer shown. Figure 33 It is shown Figure 28 A schematic energy level diagram of an example of the band gap of the hole transport layer, the lower resin layer, the light-emitting layer, and the electron transport layer of the light-emitting element layer shown. Figure 34 It is shown Figure 28 A schematic energy level diagram of an example of the band gap of the hole transport layer, the lower resin layer, the light-emitting layer, and the electron transport layer of the light-emitting element layer shown. Figure 35 This is a schematic cross-sectional view illustrating the configuration of the light-emitting element layer in a display device according to another embodiment of the present invention. Figure 36 This indicates that it is formed on the substrate. Figure 35 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 37 This indicates that it is formed on the substrate. Figure 35 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 38 This indicates that it is formed on the substrate. Figure 35 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 39 This indicates that it is formed on the substrate. Figure 35 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 40 This indicates that it is formed on the substrate. Figure 35 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 41 This is a schematic cross-sectional view showing the configuration of the light-emitting element layer in a display device according to another embodiment of the present invention. Figure 42 It is shown that in order to form Figure 41 The diagram shows a simplified flowchart of the processes performed on the light-emitting element layer. Figure 43 It is shown Figure 42 The schematic cross-sectional view of the process shown. Figure 44 It is shown Figure 42 The processing shown and described later Figure 45 The diagram shows a schematic cross-sectional view of the process. Figure 45 It is shown that in order to form Figure 41 The diagram shows a simplified flowchart of other processes performed on the light-emitting element layer. Figure 46 It is shown Figure 45 The diagram shows a schematic cross-sectional view of the process. Figure 47 This is a schematic cross-sectional view showing the configuration of the light-emitting element layer in a display device according to another embodiment of the present invention. Figure 48 This indicates that it is formed on the substrate. Figure 47 The diagram shows a simplified flowchart of one example of the process steps for a light-emitting element layer. Figure 49 This indicates that it is formed on the substrate. Figure 47 The diagram shows a simplified flowchart of one example of the process steps for a light-emitting element layer. Figure 50 This indicates that it is formed on the substrate. Figure 47 The diagram shows a simplified flowchart of one example of the process steps for a light-emitting element layer. Figure 51 This indicates that it is formed on the substrate. Figure 47 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 52 This indicates that it is formed on the substrate. Figure 47 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Figure 53 This indicates that it is formed on the substrate. Figure 47 A schematic cross-sectional view of an example of the process of a light-emitting element layer shown. Detailed Implementation

[0010] [Implementation Method 1] (Manufacturing method and composition of display device) In the following text, "same layer" refers to a layer formed from the same material in the same process (film forming process), "lower layer" refers to a layer formed in a process preceding the comparison layer, and "upper layer" refers to a layer formed in a process following the comparison layer.

[0011] Figure 1 This is a flowchart illustrating an example of a method for manufacturing a display device. Figure 2 This is a top view of an example of the configuration of the display device 2 (light-emitting device). Figure 3 yes Figure 2 The diagram shows a schematic cross-sectional view of an example of the configuration of the display area DA of the display device 2.

[0012] When manufacturing flexible display devices, such as Figures 1 to 3 As shown, firstly, a resin layer 12 is formed on a light-transmitting support substrate (e.g., mother glass) (step S1). Next, a barrier layer 3 is formed (step S2). Next, a thin-film transistor layer 4 (TFT layer) is formed (step S3). Next, a top-emitting light-emitting element layer 5 is formed (step S4). Next, a sealing layer 6 is formed (step S5). Next, a surface film 9 is adhered to the sealing layer 6 via an adhesive layer 8 (step S6).

[0013] Next, the support substrate is peeled off from the resin layer 12 using laser irradiation or the like (step S7). Next, the lower surface film 10 is adhered to the lower surface of the sealing layer 12 (step S8). Next, the laminate comprising the lower surface film 10, resin layer 12, barrier layer 3, thin-film transistor layer 4, light-emitting element layer 5, and sealing film 6 is cut to obtain multiple individual sheets (step S9). Next, a functional film 39 is adhered to the obtained individual sheets via an adhesive layer 38 (step S10). Next, an electronic circuit board (e.g., an IC chip and an FPC) is mounted on a portion (terminal portion) of the bezel area NA (step S11), the bezel area NA surrounding the display area DA on which multiple sub-pixels are formed. Furthermore, steps S1 to S11 are performed by a display device manufacturing apparatus (including a film-forming apparatus that performs each step of steps S1 to S5).

[0014] The light-emitting element layer 5 includes an anode 22 (i.e., pixel electrode) that is above the planarization film 21, an insulating edge cover 23 that covers the edge of the anode 22, an active layer 24 that is above the edge cover 23 and serves as an EL (electroluminescent) layer, and a cathode 25 (i.e. common electrode) that is above the active layer 24.

[0015] Each sub-pixel contains an island-shaped anode 22, an active layer 24, and a cathode 25. The QLED, or light-emitting element ES (electric field light-emitting element), is formed on the light-emitting element layer 5, and the sub-pixel circuit for controlling the light-emitting element ES is formed on the thin film transistor layer 4.

[0016] The sealing layer 6 is transparent and includes an inorganic sealing film 26 covering the cathode 25, an organic buffer film 27 layered above the inorganic sealing film 26, and an inorganic sealing film 28 layered above the organic buffer film 27. The sealing layer 6 covering the light-emitting element layer 5 prevents foreign matter such as water and oxygen from penetrating into the light-emitting element layer 5.

[0017] The above describes the flexible display device. However, in the manufacture of a non-flexible display device, since the formation of a resin layer and replacement of the substrate are usually unnecessary, for example, the lamination processes S2 to S5 are performed, followed by step S9. Furthermore, in the manufacture of a non-flexible display device, the sealing layer 6 can be formed instead, or a light-transmitting sealing member can be bonded in a nitrogen atmosphere using a sealing adhesive. The light-transmitting sealing member can be made of glass or plastic, and is preferably concave.

[0018] This embodiment 1 specifically relates to the step (step S4) of forming the light-emitting element layer 5 in the manufacturing method of the above-described display device. This embodiment 1 specifically relates to the active layer 24 in the configuration of the above-described display device.

[0019] (Composition of the light-emitting element layer) Figure 4 This is a schematic cross-sectional view illustrating an example of the configuration of the light-emitting element layer 5 in the display device 2 according to Embodiment 1 of the present invention.

[0020] exist Figure 4 In one example of the light-emitting element layer 5 shown, a red sub-pixel Pr (first light-emitting element, red light-emitting element), a green sub-pixel Pg (second light-emitting element, green light-emitting element), and a blue sub-pixel Pb (third light-emitting element, blue light-emitting element) are formed on the substrate (i.e., the lower film 10 or the mother glass 70 described later). Hereinafter, the red sub-pixel Pr, the green sub-pixel Pg, and the blue sub-pixel Pb will be collectively referred to as "sub-pixel P".

[0021] Figure 4 An example of the light-emitting element layer 5 shown is located in the region of the red sub-pixel Pr from the substrate side ( Figure 4 Starting from the lower side, it sequentially includes an anode 22 (lower electrode, first lower electrode), a hole injection layer 31, a hole transport layer 33 (carrier transport layer), a red lower resin layer 34r (photosensitive resin layer), a red light-emitting layer 35r (first light-emitting layer), an electron transport layer 37, and a cathode 25 (upper electrode, first upper electrode).

[0022] Similarly, in one example of the light-emitting element layer 5, from the substrate side in the region of the green sub-pixel Pg, the layer includes an anode 22 (second lower electrode), a hole injection layer 31, a hole transport layer 33, a green lower resin layer 34g (photosensitive resin layer), a green light-emitting layer 35g (second light-emitting layer), an electron transport layer 37, and a cathode 25 (second upper electrode).

[0023] Similarly, in one example of the light-emitting element layer 5, from the substrate side, the blue sub-pixel Pb region includes an anode 22 (third lower electrode), a hole injection layer 31, a hole transport layer 33, a blue light-emitting layer 35b (third light-emitting layer), an electron transport layer 37, and a cathode 25 (third upper electrode).

[0024] Hereinafter, the red lower resin layer 34r and the green lower resin layer 34g will be collectively referred to as "lower resin layer 34". In addition, the red light-emitting layer 35r, the green light-emitting layer 35g and the blue light-emitting layer 35b will be collectively referred to as "light-emitting layer 35".

[0025] Hole injection layer 31 may also be absent.

[0026] Hole transport layer 33 contains a hole transport material. The hole transport material is, for example, an inorganic material such as NiO, CuI, Cu2O, CoO, Cr2O3, and CuAlS. Other hole transport materials include, for example, PEDOT:PSS, poly((9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))(TFB), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-diphenylamine)(poly-TPD), (1,1-bis(4-(N,N-dimethylamino)phenyl)cyclohexane)(TAPC), organosilanes, and N4,N4'-bis(4-(6-((3-ethyloxetane-3-yl)methoxy)hexane). Photocurable organic materials include N4,N4'-diphenylbiphenyl-4,4'-diamine (OTPD), N4,N4'-bis(4-(6-((3-ethyloxetane-3-yl)methoxy)hexyl)phenyl-N4,N4'-bis(4-methoxyphenyl)biphenyl-4,4'-diamine (QUPD), and N,N'-(4,4'-(cyclohexane-1,1-diyl)bis(4,4-phenylene))bis(N-(4-(6-(2-ethyloxetane-2-yloxy)hexyl)phenyl)-3,4,5-trifluoroaniline (X-F6-TAPC).

[0027] The lower resin layer 34 is a resin layer formed of a reverse photoresist material. In this specification, "reverse photoresist material" means a material containing a reverse photoresist. In contrast, "positive photoresist material" means a material containing a positive photoresist.

[0028] Photoresist, for example, comprises uncured resin and a sensitizer. The resin is soluble in the developer and is, for example, acrylic resin, phenolic varnish resin, rubber resin, styrene resin, and epoxy resin. The sensitizer is, for example, an NQD (Naphtoquinone Diazide) compound. NQD compounds are insoluble in the developer. As shown in the following reaction formula (1), the NQD compound is converted to an indene carboxylic acid compound by photosensitive reaction. Indene carboxylic acid is soluble in the developer. The NQD compound is also known as DNQ (DiazoNaphtoQuinone) compounds.

[0029] [Chemistry 2] Here, R1 is the part of the NQD compound other than the NQD group, representing a substituted or unsubstituted hydrocarbon group.

[0030] In addition, the developer is an alkaline aqueous solution or an organic solvent. Examples of alkaline aqueous solutions include aqueous solutions of inorganic materials such as KOH and NaOH, and aqueous solutions of organic materials such as TMAH (tetramethylammonium). Examples of organic solvents include PGMEA (propylene glycol monomethyl etheracetate), acetone, NMP (N-methyl-2-pyrrolidone), DMSO (dimethylsulfoxide), and IPA (isopropanol).

[0031] Therefore, positive resist is insoluble in developer in its initial state before photosensitive exposure, but soluble in developer when exposed to light.

[0032] Reverse resists are, for example, formed by adding a negative working agent to a positive resist. Negative working agents include amines, aromatic hydrocarbons with hydroxyl groups, 1-hydroxyethyl-2-alkylimidazoline, and shellac. During reverse sintering, the negative working agent acts as a catalyst to decarboxylate the indene carboxylic acid compound. Therefore, the indene carboxylic acid compound, as shown in reaction formulas (2) to (4) below, is transformed into a compound insoluble in the developer by heating. In particular, the reverse resist cures when the crosslinking reaction shown in reaction formula (2) is dominant. [Chemistry 3] [Chemistry 4]

[0033] [Chemistry 5] Here, R2 refers to the portion of the resin or indolecarboxylic acid compound contained in the reverse resist, excluding the indolecarboxyl group, indicating a substituted or unsubstituted hydrocarbon group.

[0034] Therefore, similar to positive resist, reverse resist is insoluble in developer in its initial state before exposure to light, but becomes soluble upon exposure. Furthermore, after becoming soluble upon exposure to light, reverse resist becomes insoluble again upon heating or laser irradiation. In this specification, "re-insoluble" means that the reverse resist, once soluble in developer, becomes insoluble again. Re-insoluble reverse resist will not become soluble again even upon re-exposure to light.

[0035] The lower resin layer 34 is formed by making the reverse photoresist as described above insoluble, or by insolubleting it and then performing primary sintering. For this purpose, the lower resin layer 34 comprises at least one of the groups consisting of compounds represented by the following structural formulas (1) to (3), and at least one of the groups consisting of aromatic hydrocarbons having hydroxyl groups, 1-hydroxyethyl-2-alkylimidazoline and shellac.

[0036] [Chemistry 6] Here, R1 and R2 each independently represent substituted or unsubstituted hydrocarbon groups.

[0037] The thickness of the lower resin layer 34 is preferably 50 nm or less, more preferably 40 nm or less. Resin is typically a dielectric with high resistivity; therefore, the thickness of the lower resin layer 34 significantly affects the overall resistance of the light-emitting element. Thus, to reduce the overall resistance of the light-emitting element in the direction perpendicular to the substrate of the light-emitting layer 35, a thinner lower resin layer 34 is preferable.

[0038] The red lower resin layer 34r and the green lower resin layer 34g can be integrated together or formed separately.

[0039] The luminescent materials contained in each of the luminescent layers 35 can be either organic or inorganic, such as quantum dots. The quantum dots can be core-shell or multi-shell. Examples of core / shell material combinations for core-shell quantum dots include CdSe / CdS, CdSe / ZnS, CdTe / CdS, INP / ZnS, GaP / ZnS, Si / ZnS, INN / GaN, INP / CdSSe, INP / ZnSeTe, GaINP / ZnSe, GaINP / ZnS, Si / AlP, INP / ZNSTe, GaINP / ZnSTe, and GaINP / ZnSSe. In this specification, the luminescent material contained in the red luminescent layer 35r is referred to as the red luminescent material. The red luminescent material emits red light. Furthermore, the luminescent material contained in the green luminescent layer 35g is referred to as the green luminescent material. The green luminescent material, unlike the red luminescent material, emits green light. Furthermore, the luminescent material contained in the blue luminescent layer 35b is referred to as the blue luminescent material. The blue luminescent material emits a blue color, which is different from the red and green luminescent materials.

[0040] The luminescent material contained in each of the luminescent layers 35 is preferably quantum dots for the development process described later. This is because, in the case of quantum dots, the developing solution can penetrate the luminescent material layer, allowing the layer below the luminescent material layer to be developed from above.

[0041] The electron transport layer 37 contains an electron transport material. Such materials include, for example, metal oxides such as ZnO, ZrO, MgZnO, AlZnO, and TiO2, as well as metal sulfides such as ZnS.

[0042] (Manufacturing method) The following is for reference Figures 4 to 19 For forming on the substrate Figure 4 An example of the process (step S4, light-emitting element formation process) of the light-emitting element layer 5 shown will be described in detail.

[0043] Figure 5 This shows the formation on the substrate. Figure 4 A schematic flowchart of an example of the process (step S4) of the light-emitting element layer 5 shown. Figure 6 This shows the inclusion process. Figure 5 A schematic flowchart of the process (step S25) for forming the red light-emitting layer 35r and the process (process P1) performed in the process (step S26) for forming the green light-emitting layer 35g. Figure 7 It means that in the process of including Figure 5 A simplified flowchart of the process (process P2) performed in the process of forming the blue luminescent layer 35b (step S27).

[0044] Figures 8-19 They are respectively showing the Figure 4 A schematic cross-sectional view of an example of the process (step S4) in which the light-emitting element layer 5 is formed on the substrate.

[0045] First, perform the steps described above. (Refer to Figure 1 A substrate is prepared on which a resin layer 12, a barrier layer 3, and a thin-film transistor layer 4 are sequentially formed on a mother glass 70 (substrate).

[0046] Next, as Figure 5 and Figure 8 As shown, an anode 22 is formed island-shaped in each region of each sub-pixel P (step S21), an edge mask 23 is formed to cover the edge of the anode 22 (step S22), a hole injection layer 31 is formed over the entire surface (step S23), and a hole transport layer 33 is formed over the entire surface (step S24). In this specification, "over the entire surface" means that the object layer is formed together on multiple sub-pixels P without patterning.

[0047] <Includes the process of forming a red glowing layer> Next, as Figure 6 and Figures 8-11 As shown, a process including the formation of a red luminescent layer 35r is performed (step S25). In this process, a red lower resin layer 34r is also formed before the main sintering. In step S25, the following steps are performed: Figure 6 The process shown is P1.

[0048] That is, firstly, such as Figure 6 and Figure 8 As shown, a red lower reverse resist layer 41 (first reverse resist) is formed uniformly by coating the hole transport layer 33 with a reverse resist material (i.e., film formation) (step S41, part of the laminate formation step in the first light-emitting layer formation process). Next, a red light-emitting material layer 44 (first light-emitting material layer) is formed uniformly by vapor deposition of a material containing red light-emitting material (light-emitting material of the first light-emitting layer) onto the red lower reverse resist layer 41, or by coating the entire surface with a solution containing red light-emitting material and allowing the solvent to evaporate from the solution (step S42, part of the laminate formation step in the first light-emitting layer formation process). Next, a red upper positive resist layer 45 (first positive resist) is formed uniformly to a sufficient thickness by coating the entire surface with a positive resist material onto the red light-emitting material layer 44, as described later (step S43, part of the laminate formation step in the first light-emitting layer formation process).

[0049] Unless otherwise specified, the method for coating the materials on each component in this specification may be any method such as inkjet coating, spin coating, or bar coating.

[0050] The resin material and sensitizer included in the positive resist material in step S43 are preferably the same as those included in the reverse resist material in step S41. This is because, under the same conditions, including the exposure wavelength and developer, photolithography can be used to pattern the lower red reverse resist layer 41 and the upper red positive resist layer 45.

[0051] In this manner, a laminate (first laminate) is formed, consisting of a red lower reverse resist layer 41, a red luminescent material layer 44, and a red upper positive resist layer 45, sequentially arranged from the substrate side. At this time, the red lower reverse resist layer 41 and the red upper positive resist layer 45 are insoluble in the developer solution.

[0052] Next, the stacked body is exposed to ultraviolet light for the first time using a red first mask 47 (step S44, the stacked body exposure step in the first light-emitting layer formation process). Because the red first mask 47 is used, only a portion of the stacked body is exposed, while other portions are not. The red first mask 47 forms an optical opening 47A such that the portion corresponding to the formation area of ​​the red light-emitting layer 35r is light-blocking, while the other portions are light-transmitting.

[0053] At this time, in the red lower reverse resist layer 41 and the red upper positive resist layer 45, the photochemical reaction caused by ultraviolet irradiation, as shown in the above reaction formula (1), transforms the NQD compound, which is insoluble in the developer, into an indole carboxylic acid compound that is soluble in the developer.

[0054] As a result, the portions of the lower red reverse resist layer 41 and the upper red positive resist layer 45 that do not correspond to the optical opening 47A (i.e., the portions overlapping with the red luminescent layer 35r) do not undergo photochemical reactions, remaining insoluble portions 41A and 45A that are insoluble in the developer. On the other hand, the other portions corresponding to the optical opening 47A become soluble portions 41B and 45B that are soluble in the developer through photochemical reactions.

[0055] Next, as Figure 6 as well as Figure 9As shown, development is performed using a strong developer (step S45, the development step in the first light-emitting layer formation process). In this specification, "strong developer" refers to the aforementioned developer, which is a liquid that: (i) can dissolve the entire soluble portion of the resist layer above the light-emitting material layer (or light-emitting layer) by dissolving it from the top and sides; furthermore, (ii) can dissolve the entire soluble portion of the resist layer below the light-emitting material layer by dissolving it from the sides; and as a result, (iii) can free the portion of the lower resist layer in the light-emitting material layer that is soluble. Furthermore, as described above, when the light-emitting material is a quantum dot, the developer penetrates the light-emitting material layer, allowing the soluble portion of the resist layer below the light-emitting material layer to dissolve from the top and sides.

[0056] Strong developing solutions are, for example, concentrated alkaline aqueous solutions or alkaline solutions with high concentrations of added surfactants. Concentrated alkaline aqueous solutions have a pH of 12 or higher. Surfactants are, for example, nonionic surfactants such as fatty acid esters, polyoxyethylene alkyl ethers, fatty acid polyethylene glycol, and fatty acid alkanolamides, at concentrations of, for example, 1% by weight or higher. Nonionic surfactants are less affected by acids and alkalis. Surfactants promote penetration into the luminescent material layer. In this specification, the use of strong developing solutions will be described as "strong development" or "intense development."

[0057] As a result, by removing the soluble portion 41B (the exposed first reverse resist) of the red lower reverse resist layer 41, the exposed portion of the laminate, including the red luminescent material layer 44, is removed. On the other hand, since the insoluble portion 41A of the red lower reverse resist layer 41 remains, the unexposed portion of the laminate remains. Therefore, the soluble portions 41B and 45B of the red lower reverse resist layer 41 and the red upper positive resist layer 45, and the portion of the red luminescent material layer 44 between the soluble portions 41B and 45B, are removed. On the other hand, the insoluble portions 41A and 45A of the red lower reverse resist layer 41 and the red upper positive resist layer 45, and the portion of the red luminescent material layer 44 between the insoluble portions 41A and 45A, remain. The remaining portion of the red luminescent material layer 44 is the red luminescent layer 35r.

[0058] By using photolithography and the re-insolubility of the reverse resist, the above-mentioned laminate is patterned, resulting in the formation of a red luminescent layer 35r. At the same time, the insoluble portions 41A and 45A of the lower red reverse resist layer 41 and the upper red positive resist layer 45 are formed to overlap with the red luminescent layer 35r when viewed from a top view orthogonal to the substrate.

[0059] Next, as Figure 6 and Figure 10As shown, the patterned laminate is exposed a second time using ultraviolet light through a red second mask 48 (step S46, the reverse resist exposure step in the first non-dissolving process). The red second mask 48 has optical openings 48A formed such that the portion corresponding to the formation area of ​​the red luminescent layer 35r is transparent, while the other portions are opaque.

[0060] As a result, the insoluble portion 41A of the lower red reverse resist layer 41 (the first reverse resist overlapping the first light-emitting layer) and the insoluble portion 45A of the upper red positive resist layer 45 are transformed into soluble portions 41C (the exposed first reverse resist) and soluble portions 45C, which are soluble in the developer, through a photochemical reaction. Furthermore, a second exposure can be performed without a mask, but from the viewpoint of reducing photodegradation, it is preferable to use a second red mask 48.

[0061] Next, as Figure 6 and Figure 11 As shown, the patterned laminate is subjected to reverse sintering (step S47, the heating step in the first non-melting process). Reverse sintering is performed by heating or laser irradiation in a manner where the red upper resist layer 45 remains uncured while the red lower reverse resist layer 41 remains unmelted. Since reverse sintering by heating is simple, it is preferred. Reverse sintering by heating is preferably performed at a temperature lower than the curing temperature of the positive resist constituting the red upper positive resist layer 45 and for a shorter time than the curing time. For example, if the red upper positive resist layer 45 cures at 120 degrees Celsius or higher for 10 minutes or more, reverse sintering is preferably performed at a temperature lower than 120 degrees Celsius and for less than 10 minutes.

[0062] At this time, in the lower red reverse resist layer 41, through decarboxylation, as shown in the above reaction formulas (2) to (4), the indole carboxylic acid compound soluble in the developer solution is transformed into a compound insoluble in the developer solution. On the other hand, in the upper red positive resist layer 45, the indole carboxylic acid compound soluble in the developer solution remains as an indole carboxylic acid compound.

[0063] As a result, the soluble portion 41C of the red lower reverse resist layer 41 becomes a re-insoluble portion 41D that is insoluble in the developer due to decarboxylation. The re-insoluble portion 41D of the red lower reverse resist layer 41 is formed directly or through the main sintering (step S29) described later to form the red lower resin layer 34r. On the other hand, the soluble portion 45C of the red upper positive resist layer 45 remains soluble.

[0064] In step S25, as described above, the red luminescent layer 35r is formed in a protected state between the insoluble portion 41D of the lower red reverse resist layer 41 and the soluble portion 45C of the upper red positive resist layer 45.

[0065] <Including the process of forming a green luminescent layer> Next, as Figure 5 and picture Figure 15 As shown, a process including the formation of a 35g green luminescent layer is performed (step S26). In this process, a 34g green lower resin layer is also formed before the main sintering. In step S26, the following steps are also performed... Figure 6 The process shown is P1.

[0066] That is, firstly, such as Figure 6 and Figure 12 As shown, a green lower layer reverse resist layer 51 (second negative phase resist) is formed by coating the hole transport layer 33 and the soluble portion 45C of the red upper positive resist layer 45 with a reverse resist material, thereby forming a green lower layer reverse resist layer 51 (second negative phase resist) (step S42, part of the second light-emitting layer formation process). Next, a material containing green light-emitting material (light-emitting material of the second light-emitting layer) is vapor-deposited onto the green lower layer reverse resist layer 51, or a solution containing green light-emitting material is coated onto the entire surface and the solvent is evaporated from the solution, thereby forming a green light-emitting material layer 54 (second light-emitting material layer) (step S42, part of the second light-emitting layer formation process). Next, a positive resist material is coated onto the green light-emitting material layer 54, thereby forming a green upper layer positive resist layer 55 (second positive resist) of sufficient thickness as described later (step S43, part of the second light-emitting layer formation process).

[0067] Preferably, the reverse resist material used in process P1 of step S26 has the same composition as the reverse resist material used in process P1 of step S25. This is because, under the same conditions as the red lower reverse resist layer 41, the green lower reverse resist layer 51 can be patterned and re-insoluble. Preferably, the positive resist material used in process P1 of step S26 has the same composition as the positive resist material used in process P1 of step S25. This is because, under the same conditions as the red upper positive resist layer 45, the green upper positive resist layer 55 can be patterned.

[0068] In this manner, a laminate (second laminate) is formed, which sequentially includes a green lower reverse resist layer 51, a green light-emitting material layer 54, and a green upper positive resist layer 55, starting from the substrate side.

[0069] Next, the stacked body is exposed to ultraviolet light for the first time using a green first mask 57 (step S44, part of the second light-emitting layer formation process). Because the green first mask 57 is used, only a portion of the stacked body is exposed, while other portions are not. The green first mask 57 forms an optical opening 57A, such that the portion corresponding to the formation area of ​​the green light-emitting layer 35g is light-blocking, while the other portions are light-transmitting.

[0070] As a result, the portions of the lower green reverse resist layer 51 and the upper green positive resist layer 55 that do not correspond to the optical opening 57A (i.e., the portions overlapping with the green luminescent layer 35g) do not undergo photochemical reactions, remaining insoluble portions 51A and 55A that are insoluble in the developer. On the other hand, the other portions corresponding to the optical opening 47A become soluble portions 51B and 55B that are soluble in the developer through photochemical reactions.

[0071] Next, as Figure 6 as well as Figure 13 As shown, strong development is performed (step S45, part of the second light-emitting layer formation process).

[0072] As a result, by removing the soluble portion 51B of the lower green reverse resist layer 51, the exposed portion of the laminate, including the green luminescent material layer 54, is removed. On the other hand, since the insoluble portion 51A of the lower green reverse resist layer 51 remains, the unexposed portion of the laminate remains. Therefore, the soluble portions 51B and 55B in the lower green reverse resist layer 51 and the upper green positive resist layer 55, and the portion of the green luminescent material layer 54 between the soluble portions 51B and 55B, are removed. On the other hand, the insoluble portions 51A and 55A in the lower green reverse resist layer 51 and the upper green positive resist layer 55, and the portion of the green luminescent material layer 54 between the insoluble portions 51A and 55A, remain. This remaining portion of the green luminescent material layer 54 becomes the green luminescent layer 35g.

[0073] At this point, please note that after the soluble portion 55B of the green upper positive resist layer 55 is removed, the upper surface of the soluble portion 45C of the red upper positive resist layer 45 is exposed to the strong developer. Therefore, the soluble portion 45C of the red upper positive resist layer 45 is formed to a sufficient thickness in step S26 (and step S27 described later) to maintain the protection of the red luminescent layer 35r by the soluble portion 45C of the red upper positive resist layer 45 in step S25. In addition, the insoluble portion 41D of the red lower reverse resist layer 41 is also insoluble in the strong developer. Therefore, the red luminescent layer 35r is not removed and remains in the protected state as described above.

[0074] By using photolithography and the re-insolubility of the reverse resist, the above-mentioned laminate is patterned, resulting in the formation of a green light-emitting layer 35g. At the same time, the insoluble portions 51A and 55A of the lower green reverse resist layer 51 and the upper green positive resist layer 55 are formed to overlap with the green light-emitting layer 35g when viewed from a top view orthogonal to the substrate.

[0075] Next, as Figure 6 and Figure 14 As shown, the patterned laminate is exposed a second time using ultraviolet light through a green second mask 58 (step S46, part of the second non-melting process). The green second mask 58 forms an optical opening 58A, such that the portion corresponding to the formation area of ​​the green light-emitting layer 35g is light-transmitting, while the other portions are light-blocking.

[0076] As a result, the insoluble portions 51A and 55A of the lower green reverse resist layer 51 and the upper green positive resist layer 55 become soluble portions 51C and 55C that are soluble in the developer solution due to photochemical reaction. Furthermore, a second exposure can be performed without a mask, but from the viewpoint of reducing photodegradation, it is preferable to use a green second mask 58.

[0077] Next, as Figure 6 and Figure 15 As shown, the patterned laminate is subjected to reverse sintering (step S47, part of the second non-melting process). Reverse sintering is performed by heating or laser irradiation in a manner in which the red upper positive resist layer 45 and the green upper positive resist layer 55 do not solidify, while the green lower reverse resist layer 51 does not melt.

[0078] As a result, the soluble portion 51C of the lower green reverse resist layer 51 becomes a re-insoluble portion 51D that is insoluble in the developer due to decarboxylation. On the other hand, the soluble portion 55C of the upper green positive resist layer 55 remains soluble 55C.

[0079] In step S26, as described above, the green luminescent layer 35g is formed in a protected state between the insoluble portion 51D of the lower green reverse resist layer 51 and the soluble portion 55C of the upper green positive resist layer 55.

[0080] <Includes the process of forming a blue luminescent layer> Next, as Figure 5 and picture Figure 18 As shown, a process including the formation of a blue light-emitting layer 35b is performed (step S27). In step S27, the following steps are executed: Figure 7 The process shown is P2.

[0081] That is, firstly, such as Figure 7 and Figure 16As shown, a blue luminescent material layer 64 (third luminescent material layer) is formed by vapor-depositing a material containing blue luminescent material (luminescent material of the third luminescent layer) onto the soluble portions 45C and 55C of the hole transport layer 33, the red upper positive resist layer 45, and the green upper positive resist layer 55, or by coating the entire surface with a solution containing blue luminescent material and allowing the solvent to evaporate from the solution (step S42, part of the third luminescent layer formation process). Next, a positive resist material is coated onto the entire surface of the blue luminescent material layer 64, thereby forming a blue upper positive resist layer 65 (third positive resist) (step S43, part of the third luminescent layer formation process).

[0082] Preferably, the composition of the positive resist material used in process P1 of step S27 is the same as that used in process P1 of steps S25 and S26 described above. This is because the blue upper positive resist layer 65 can be patterned under the same conditions as the red upper positive resist layer 45 and the green upper positive resist layer 55.

[0083] In this way, a laminate (third laminate) is formed, which sequentially includes a blue luminescent material layer 64 and a blue upper positive resist layer 65 starting from the substrate side.

[0084] Next, the laminate is exposed to ultraviolet light for the first time using a blue first mask 67 (part of step S44, the third light-emitting layer formation process). Because the blue first mask 67 is used, only a portion of the laminate is exposed, while other portions are not. The blue first mask 67 has an optical opening 67A, such that the portion corresponding to the formation area of ​​the blue light-emitting layer 35b is light-blocking, while the other portions are light-transmitting.

[0085] As a result, the portions of the blue lower reverse resist layer 61 and the blue upper positive resist layer 65 that do not correspond to the optical opening 67A (i.e., the portions overlapping with the blue luminescent layer 35b) do not undergo photochemical reactions, remaining insoluble portions 61A and 65A that are insoluble in the developer. On the other hand, the other portions corresponding to the optical opening 67A become soluble portions 61B and 65B that are soluble in the developer through photochemical reactions.

[0086] Next, as Figure 7 as well as Figure 17 As shown, strong development is performed (step S45, part of the third light-emitting layer formation process).

[0087] As a result, the soluble portion 65B of the blue upper positive resist layer 65 is removed, and the soluble portions 45C and 55C of the red upper positive resist layer 45 and the green upper positive resist layer 55 are removed. Thus, the exposed portion of the laminate, including the blue luminescent material layer 64, is removed. Because the insoluble portion 65A of the remaining blue upper positive resist layer 65 remains, an unexposed portion of the laminate remains. Therefore, the soluble portion 65B of the blue upper positive resist layer 65 and the portion below the blue luminescent material layer 64 are removed. On the other hand, the insoluble portion 65A of the blue upper positive resist layer 65 and the portion below the blue luminescent material layer 64 remain. The remaining portion of the blue luminescent material layer 64 is the blue luminescent layer 35b.

[0088] As a result, by removing the soluble portion 51B of the green underlayer reverse resist layer 51, the exposed portion of the laminate, including the green luminescent material layer 54, is removed. On the other hand, since the insoluble portion 51A of the green underlayer reverse resist layer 51 remains, the unexposed portion of the laminate remains.

[0089] At this point, note that after the soluble portion 65B of the blue upper positive resist layer 65 is removed, the upper surfaces of the soluble portions 45C and 55C of the red upper positive resist layer 45 and the green upper positive resist layer 55 are exposed to the strong developer. Therefore, in step S35, the soluble portion 45C of the red upper positive resist layer 45 is formed to maintain a sufficient thickness in step S27 to protect the red luminescent layer 35r. It is protected between the insoluble portion 41D of the red lower reverse resist layer 41 and the soluble portion 45C of the red upper positive resist layer 45. Similarly, the soluble portion 55C of the green upper positive resist layer 55 is formed in step S26 to maintain a sufficient thickness in step S27 to protect the green luminescent layer 35g. Furthermore, the insoluble portions 41D and 51D of the red underlayer reverse resist layer 41 and the green underlayer reverse resist layer 51 are also insoluble in the strong developer. Therefore, the red luminescent layer 35r and the green luminescent layer 35g are not removed and remain in the protected state as described above.

[0090] By using photolithography and the re-insolubility of the reverse resist, the above-mentioned laminate is patterned, resulting in the formation of a blue light-emitting layer 35b. At the same time, the insoluble portion 65A of the upper blue positive resist layer 65 is formed to overlap with the blue light-emitting layer 35b when viewed from a top view orthogonal to the substrate.

[0091] Next, as Figure 7 and Figure 18As shown, the patterned stack is exposed a second time using ultraviolet light using a blue second mask 68 (step S46). The portion of the blue second mask 68 corresponding to the blue light-emitting layer 35b is transparent, while the other portions are opaque, thereby forming an optical opening 68A.

[0092] As a result, the insoluble portion 65A of the blue upper positive resist layer 65 becomes the soluble portion 65C, which is soluble in the developer, through a photochemical reaction. Alternatively, a second exposure can be performed without a mask, but from the viewpoint of reducing photodegradation, it is preferable to use a blue second mask 68.

[0093] In step S27, as described above, the blue luminescent layer 35b is formed in a state where it is protected by being covered below the soluble portion 65C of the blue upper positive resist layer 65.

[0094] Next, as Figure 5 and Figure 19 As shown, development is performed using a weak developer. (Step S28, positive resist removal process) In this specification, "weak developer" refers to the aforementioned developer, which is a liquid that can dissolve the entire soluble portion of the resist layer above the luminescent material layer (or luminescent layer) by dissolving it from the top and sides, but (ii) cannot dissolve the entire soluble portion of the resist layer below the luminescent material layer by dissolving it from the sides, resulting in (iii) a liquid that cannot free the luminescent material layer. The weak developer is, for example, a dilute alkaline aqueous solution without added surfactant, or an organic solvent without added surfactant. For example, a dilute alkaline aqueous solution has a pH of 7 or higher and less than 11.

[0095] As a result, the soluble portions 45C, 55C, and 65C of the red upper positive resist layer 45, the green upper positive resist layer 55, and the blue upper positive resist layer 65 are removed from the top of each luminescent layer 35. On the other hand, each luminescent layer 35 remains. In addition, the insoluble portions 41D and 51D of the red lower reverse resist layer 41 and the green lower reverse resist layer 51 are also left.

[0096] Next, the main sintering is performed (step S29). As a result, the insoluble portions 41D and 51D of the red lower reverse resist layer 41 and the green lower reverse resist layer 51 are cured to form the red lower resin layer 34r and the green lower resin layer 34g.

[0097] Next, as Figure 5 As shown, an electron transport layer 37 is formed over the entire surface of the light-emitting layer 35 (step S30), and a cathode 25 is formed over the entire surface of the electron transport layer 37 (step S31). Thus, a cathode 25 is formed. Figure 4 The light-emitting element layer 5 is shown.

[0098] (Variation Example 1) In the method described in Embodiment 1, step S29 may also be omitted (see [reference]). Figure 5 Without further processing, the insoluble portions 41D and 51D remain uncured, becoming the red lower resin layer 34r and the green lower resin layer 34g.

[0099] (Variation Example 2) Figure 20 This is a schematic cross-sectional view showing another example of the configuration of the light-emitting element layer 5 in the display device 2 (light-emitting device) according to Embodiment 1.

[0100] In the method according to Embodiment 1, the following steps can be performed. (Refer to Figure 5 The order of ) is swapped. In the case of order swapping, in step Executed in the last process of the process Figure 7 Process P2, as shown, is performed in a process other than the last one. Figure 6 The process P1 is shown. As a result, no lower resin layer 34 is formed under the light-emitting layer of the last color formed in the light-emitting layer 35, but a lower resin layer 34 is formed under the light-emitting layers of other colors.

[0101] For example, it can also be done in the steps Finally, proceed to step S25. In this case, such as Figure 20 As shown, the red lower resin layer is not formed below the red light-emitting layer 35r. Instead, the blue lower resin layer 34b is formed below the blue light-emitting layer 35b. In this case, the green lower resin layer 34g and the blue lower resin layer 34b are collectively referred to as "lower resin layer 34".

[0102] (Variation Example 3) Figures 21-25 They are respectively showing the Figure 4 A schematic cross-sectional view of another example of the process (step S4) in which the light-emitting element layer 5 is formed on the substrate.

[0103] In the method according to Embodiment 1, in the last step of the multiple steps of processing P1, in Figure 6In the first exposure (step S44) of the process P1 shown, a third mask, different from the first and second masks, can be used. The third mask is light-shielding at least in the portion corresponding to the formation area of ​​the light-emitting layer formed in this final step. Alternatively, the third mask may be light-shielding in any of the portions corresponding to the formation areas of previously formed light-emitting layers, or in any of the portions corresponding to the gaps between the formation areas of the light-emitting layers.

[0104] For example, an example is shown where step S25 processes P1, step S26 processes P1, and then step S27 processes P2. In this example, step S26 replaces the figure. Figure 15 As shown in the figure Figure 24 P1 should be processed in that way.

[0105] First, such as Figure 6 as well as Figure 21 As shown, a laminate is formed comprising a lower green reverse resist layer 51, a green light-emitting material layer 54, and an upper green positive resist layer 55, sequentially from the substrate side (steps S41 to S43). Next, the laminate is exposed to ultraviolet light for the first time using a green third mask 59 (step S44). The portion of the green third mask 59 corresponding to the formation area of ​​the green light-emitting layer 35g is light-shielding. In addition, the portion of the green third mask 59 corresponding to the formation area of ​​the red light-emitting layer 35r and the portion corresponding to the gap between the formation areas of the red light-emitting layer 35r and the green light-emitting layer 35g is also light-shielding. The green third mask 59 has an optical opening 59A formed in such a way that the remaining portions are transparent.

[0106] As a result, except for the portion overlapping with the green luminescent layer 35g in the lower green reverse resist layer 51 and the upper green positive resist layer 55, the portion overlapping with the red luminescent layer 35r and the portion corresponding to the gap between the red luminescent layer 35r and the green luminescent layer 35g do not undergo photochemical reaction, thus remaining insoluble portions 51A and 55A that are insoluble in the developer. On the other hand, the other portions become soluble portions 51B and 55B that are soluble in the developer through photochemical reaction.

[0107] Next, as Figure 6 as well as Figure 22As shown, development is performed using a strong developer (step S45). As a result, insoluble portions 51A and 55A in the lower green reverse resist layer 51 and the upper green positive resist layer 55 remain between them and the portion in the green luminescent material layer 54. In this modified example, the portion of the remaining portion of the green luminescent material layer 54 that corresponds to the formation area of ​​the green luminescent layer 35g becomes the green luminescent layer 35g, but the non-corresponding remaining portion 54A is ultimately removed.

[0108] Next, as Figure 6 and Figure 23 As shown, the patterned stack is exposed a second time with ultraviolet light using a green second mask 58 (step S46).

[0109] As a result, the exposed portions of the insoluble regions 51A and 55A in the lower green reverse resist layer 51 and the upper green positive resist layer 55 undergo a photochemical reaction to become soluble regions 51C and 55C, which are soluble in the developer. The unexposed portions of the insoluble regions 51A and 55A do not undergo a photochemical reaction and remain insoluble in the developer. Here, the unexposed portions of the insoluble regions 51A and 55A are referred to as insoluble regions 51E and 55E.

[0110] Additionally, please note that, unlike the case where a green first mask 57 is used in the first exposure, in the second exposure (step S46), a mask with an opening is required so that the portion corresponding to the remaining portion 54A of the green luminescent material layer 54 is light-blocking, while the portion corresponding to the green luminescent layer 35g is light-transmitting.

[0111] Next, as Figure 6 as well as Figure 24 As shown, the patterned laminate is subjected to reverse sintering (step S47).

[0112] As a result, the soluble portion 51C of the lower green reverse resist layer 51 becomes a re-insoluble portion 51D that is insoluble in the developer due to decarboxylation. On the other hand, the soluble portion 55C of the upper green positive resist layer 55 remains soluble. Similarly, the insoluble portions 51E and 55E of the lower green reverse resist layer 51 and the upper green positive resist layer 55 remain insoluble.

[0113] Next, the process of forming the blue luminescent layer 35b begins. Figure 5 Step S27), such as Figure 6 as well as Figure 7 as well as Figure 25 As shown, a laminate consisting of a blue luminescent material layer 64 and a blue upper positive resist layer 65 is formed sequentially from the substrate side (steps S42-S43). Next, the laminate is exposed to ultraviolet light for the first time using a blue first mask 67 (step S44).

[0114] As a result, the portions that do not overlap with the blue luminescent layer 35b in the blue lower reverse resist layer 61 and the blue upper positive resist layer 65 become soluble portions 61B and 65B, which are soluble in the developer, through photochemical reaction. Simultaneously, the insoluble portions 51E and 55E of the green lower reverse resist layer 51 and the green upper positive resist layer 55 become soluble portions 51F and 55F, which are soluble in the developer, due to photochemical reaction.

[0115] Next, strong development is performed (step S45).

[0116] As a result, the soluble portions 61B and 65B in the blue lower reverse resist layer 61 and the blue upper positive resist layer 65, as well as the portion of the blue luminescent material layer 64 between the soluble portions 61B and 65B, are removed. Simultaneously, the soluble portions 51F and 55F in the green lower reverse resist layer 51 and the green upper positive resist layer 55, as well as the portion of the green luminescent material layer 54 between the soluble portions 51F and 55F, are also removed.

[0117] Therefore, through the above processes, it is possible to obtain the same as Figure 17 The stacked bodies in each sub-pixel shown have the same structure.

[0118] Figure 26 and Figure 28 These are schematic cross-sectional views showing yet another example of the configuration of the light-emitting element layer 5 in the display device 2 (light-emitting device) of Embodiment 1.

[0119] Figure 27 It shows that Figure 26 A schematic flowchart of an example of the process (step S4) in which the light-emitting element layer 5 is formed on the substrate.

[0120] like Figure 26 As shown, the light-emitting element layer 5 may also include, from the substrate side, a cathode 25 (first lower electrode), an electron transport layer 37, a lower resin layer 34 (photosensitive resin), a light-emitting layer 35, a hole transport layer 33, a hole injection layer 31, and an anode 22 (first upper electrode).

[0121] In this case, the process of forming the light-emitting element layer 5 (step S4) is as follows: Figure 27As shown, a cathode 25 is formed in an island shape in each region of each sub-pixel P (step S31), an edge mask 23 is formed to cover the edge of the cathode 25 (step S22), an electron transport layer 37 is formed on the entire surface (step S30), a process is performed to form a red light-emitting layer 35r (step S25), a process is performed to form a green light-emitting layer 35g (step S26), a process is performed to form a blue light-emitting layer 35b (step S27), weak development is performed (step S28), main sintering is performed (step S29), a hole transport layer 33 is formed on the entire surface (step S24), a hole injection layer 31 is formed on the entire surface (step S23), and an anode 22 is formed on the entire surface (step S21).

[0122] In this case, the steps can also be interchanged. The order. In the steps Executed in the last process of the process Figure 7 Process P2, as shown, is performed in all other processes. Figure 6 The process P1 is shown. For example, step S25 can also be performed at the end. In this case, as... Figure 28 As shown, the red lower resin layer is not formed below the red light-emitting layer 35r. Instead, the blue lower resin layer 34b is formed below the blue light-emitting layer 35b.

[0123] (Variation Example 5) In step S42, performed in step S25, a solution containing luminescent material and positive resist can also be applied to the entire surface, allowing the solvent to evaporate from the solution, thereby forming a red luminescent material layer 44. In this case, in step S44, the positive resist contained in the portion of the red luminescent material layer 44 outside the formation area of ​​the red luminescent layer 35r is soluble in the developer. Therefore, in the subsequent step S45, compared to the case where the red luminescent material layer 44 is formed from a solution without positive resist, the portion of the red luminescent material layer 44 corresponding to the formation area of ​​the red luminescent layer 35r is more easily removed.

[0124] As a result, in step S45, development can be performed using a slightly stronger developer. In this specification, "slightly stronger developer" refers to the aforementioned developer, which is a liquid that: (i) can completely dissolve the soluble portion of the resist layer above the luminescent material layer (or luminescent layer) by dissolving it from the upper surface and sides; (ii) can dissolve or permeate the luminescent material layer formed by a solution containing a positive resist; and (iii) can completely dissolve the soluble portion of the resist layer below the luminescent material layer by dissolving it from the top and sides. A slightly stronger developer is, for example, a slightly concentrated alkaline aqueous solution, a dilute alkaline solution with a low concentration of surfactant, or an organic solvent with a low concentration of surfactant. A slightly concentrated alkaline aqueous solution has, for example, a pH of 11 or higher and less than 12. A low concentration is, for example, less than 0.5% by weight.

[0125] By using a slightly stronger developer, damage to individual layers or components can be reduced compared to using a strong developer.

[0126] In addition, in the display device 2, the red light-emitting layer 35r contains a positive photosensitive resin derived from a positive resist.

[0127] Similarly, in each step S42 of step S42 performed in steps S26 and S27, the green luminescent material layer 54 and the blue luminescent material layer 64 can also be formed by coating the entire surface with a solution containing luminescent material and front resist, allowing the solvent to evaporate from the solution.

[0128] (Variation Example 6) The above describes an example where two of the three sub-pixels—red sub-pixel Pr, green sub-pixel Pg, and blue sub-pixel Pb—have a lower resin layer. However, the scope of this embodiment is not limited to this. Examples ranging from only one of N light-emitting elements having a lower resin layer to only (N-1) of N light-emitting elements having a lower resin layer are also included in this embodiment 1. n is an integer greater than or equal to 2.

[0129] The aforementioned variations 1 to 6 can be combined with each other in any combination. Furthermore, the aforementioned variations 1 to 5 and any combinations thereof can be applied to Embodiment 2 described later. Furthermore, the aforementioned variations 2 to 6 and any combinations thereof can be applied to Embodiment 3 described later. Furthermore, the aforementioned variations 1 to 6 and any combinations thereof can be applied to Embodiment 4 described later.

[0130] (Energy levels of the light-emitting element layer) The following is for reference Figures 29-34 The band gap of the lower resin layer 34 in this embodiment will be described in detail.

[0131] Figure 29 It is shown Figure 4 A schematic energy level diagram of an example of the band gap of the hole transport layer 33, the lower resin layer 34, the light-emitting layer 35, and the electron transport layer 37 of the light-emitting element layer 5 shown.

[0132] Figure 30 as well as Figure 31 It is shown Figure 20 A schematic energy level diagram of an example of the band gap of the hole transport layer 33, the lower resin layer 34, the light-emitting layer 35, and the electron transport layer 37 of the light-emitting element layer 5 shown.

[0133] Figure 32 It is shown Figure 26 A schematic energy level diagram of the band gaps of the hole transport layer 33, the lower resin layer 34, the light-emitting layer 35, and the electron transport layer 37 of the light-emitting element layer 5 is shown.

[0134] Figure 33 as well as Figure 34 It is shown Figure 28 A schematic energy level diagram of the band gaps of the hole transport layer 33, the lower resin layer 34, the light-emitting layer 35, and the electron transport layer 37 of the light-emitting element layer 5 shown.

[0135] Figures 29-34 Each is represented by its upper side as the conduction band and its lower side as the valence band. Hereinafter, the energy levels closest to vacuum (i.e., the lowest unoccupied molecular orbital (LUMO) or the lower end of the conduction band, or the highest occupied molecular orbital (HOMO) or the upper end of the valence band) will be used. Figures 29-34 The upper side (where electron affinity or ionization energy is low) appears "shallow". Additionally, energy levels far from the vacuum (i.e., Figures 29-34 The lower side (where electron affinity or ionization energy is high) is characterized as "deep".

[0136] like Figure 4 and Figure 20 As shown, in the configuration where the lower resin layer 34 is located between the hole transport layer 33 and the light-emitting layer 35, as... Figures 29-31 As shown, the HOMO of the lower resin layer 34 needs to be deeper than that of the hole transport layer 33. This is because when the HOMO of the lower resin layer 34 is equal to or shallower than that of the hole transport layer 33, holes moving from the hole transport layer 33 to the light-emitting layer 35 are captured by the lower resin layer 34.

[0137] exist Figure 4 and Figure 20In this configuration, when the HOMO of the red lower resin layer 34r is deeper than that of the hole transport layer 33 and deeper than the upper end of the valence band of the red emitting layer 35r, the red lower resin layer 34r functions as a layer that hinders hole injection from the hole transport layer 33 to the red emitting layer 35r. As a result, over-injection of holes can be reduced. On the other hand, when the HOMO of the red lower resin layer 34r is deeper than that of the hole transport layer 33 and shallower than the upper end of the valence band of the red emitting layer 35r, the red lower resin layer 34r functions as a layer that assists in the injection of holes from the hole transport layer 33 to the red emitting layer 35r. The same applies to the green lower resin layer 34g and the blue lower resin layer 34b.

[0138] exist Figure 4 In the configuration shown, such as Figure 29 As shown, the HOMO of the lower resin layer 34 is preferably deeper than the upper end of the valence band of the blue light-emitting layer 35b. This hinders the movement of holes from the hole transport layer 33 to the red light-emitting layer 35r and the green light-emitting layer 35g. In other words, in a configuration where no lower resin layer is formed between the light-emitting layer with the deepest upper valence band and the hole transport layer, but a lower resin layer is formed between other light-emitting layers and the hole transport layer, it is preferable that the HOMO of the lower resin layer is deeper than the upper end of the valence band of the light-emitting layer with the deepest upper valence band among the various light-emitting layers.

[0139] exist Figure 20 In the configuration shown, the preferred configuration is as follows: Figure 30 and Figure 31 As shown, the HOMO of the lower resin layer 34 is shallower than the upper end of the valence band of the blue emitting layer 35b. Therefore, the HOMO of the hole transport layer 33, the HOMO of the lower blue resin layer 34b, and the upper end of the valence band of the blue emitting layer 35b are arranged in a stepped manner. As a result, the movement of holes from the hole transport layer 33 to the blue emitting layer 35b is promoted. In other words, in a configuration where no lower resin layer is formed between the light-emitting layer with the shallowest upper valence band and the hole transport layer, but a lower resin layer is formed between other light-emitting layers and the hole transport layer, it is preferable that the HOMO of the lower resin layer is shallower than the upper end of the valence band of the light-emitting layer with the deepest upper valence band among the various light-emitting layers.

[0140] like Figure 26 and Figure 28 As shown, in the configuration where the lower resin layer 34 is located between the electron transport layer 37 and the light-emitting layer 35, it is necessary to... Figures 32-34 The LUMO of the lower resin layer 34 shown is shallower than that of the electron transport layer 37. This is because, when the LUMO of the lower resin layer 34 is equal to or deeper than that of the electron transport layer 37, electrons moving from the electron transport layer 37 to the light-emitting layer 35 are captured by the lower resin layer 34.

[0141] exist Figure 26 and Figure 28 In the configuration shown, when the LUMO of the red lower resin layer 34r is shallower than the LUMO of the electron transport layer 37 and shallower than the lower end of the conduction band of the red emitting layer 35r, the red lower resin layer 34r functions as a layer that hinders the injection of electrons from the electron transport layer 37 to the red emitting layer 35r. As a result, excess electron injection can be reduced. On the other hand, when the LUMO of the red lower resin layer 34r is shallower than the LUMO of the electron transport layer 37 and deeper than the lower end of the conduction band of the red emitting layer 35r, the red lower resin layer 34r functions as a layer that assists in the injection of electrons from the electron transport layer 37 to the red emitting layer 35r. The same applies to the green lower resin layer 34g and the blue lower resin layer 34b.

[0142] exist Figure 26 In the configuration shown, such as Figure 32 As shown, the LUMO of the lower resin layer 34 is preferably shallower than the lower end of the conduction band of the blue light-emitting layer 35b. This hinders the movement of electrons from the electron transport layer 37 to the red light-emitting layer 35r and the green light-emitting layer 35g. In other words, in a configuration where no lower resin layer is formed between the light-emitting layer with the shallowest lower end of the conduction band and the electron transport layer, and a lower resin layer is formed between other light-emitting layers and the electron transport layer, the LUMO of the lower resin layer is preferably shallower than the lower end of the conduction band of the light-emitting layer with the shallowest lower end of the conduction band among the various light-emitting layers.

[0143] exist Figure 28 In the structure shown, such as Figure 33 and Figure 34 As shown, the lower LUMO of the preferred lower resin layer 34 is deeper than the lower end of the conduction band of the blue emitting layer 35b. Thus, the LUMO of the electron transport layer 37, the LUMO of the blue lower resin layer 34b, and the lower end of the conduction band of the blue emitting layer 35b are arranged in a stepped manner. This promotes electron movement from the electron transport layer 37 to the blue emitting layer 35b. In other words, in a configuration where no lower resin layer is formed between the emitting layer with the deepest lower conduction band and the electron transport layer, but a lower resin layer is formed between the other emitting layers and the hole transport layer, the LUMO of the lower resin layer is preferably deeper than the lower end of the conduction band of the emitting layer with the shallowest lower conduction band among the various emitting layers.

[0144] (Effects) According to the method of Embodiment 1, the layer containing quantum dots and the layer containing photoresist are independent. Therefore, the layer containing quantum dots sufficiently contains quantum dots and can be patterned.

[0145] According to the method involved in this embodiment 1, such as Figure 8As shown, a red luminescent material layer 44 is formed on a red underlayer reverse resist layer 41, and the unwanted portions of the red luminescent material layer 44 (i.e., the portions that do not become part of the red luminescent layer 35r) are as follows. Figure 9 As shown, the soluble portion 41B of the red lower inversion resist layer 41 is removed. Therefore, it is possible to reduce the amount of luminescent material from the red luminescent layer 35r mixed as residue outside the formation area of ​​the red luminescent layer 35r. Similarly, it is possible to reduce the amount of luminescent material from the green luminescent layer 35g mixed as residue outside the formation area of ​​the green luminescent layer 35g. By reducing this mixing, color mixing between sub-pixels (luminescent elements) can be reduced.

[0146] According to the method of Embodiment 1, a red luminescent material layer 44 is formed over the entire surface between a red lower reverse resist layer 41 and a red upper positive resist layer 45. Furthermore, the red luminescent layer 35r is patterned using photoresist technology to form the red luminescent material layer 44. Therefore, even when the red luminescent material layer 44 is formed by coating the entire surface with a solution containing the red luminescent material and allowing the solvent to evaporate from the solution, no unevenness is produced in the red luminescent layer 35r due to the coffee ring effect and surface tension. As a result, the red luminescent layer 35r can be formed flat and uniformly. The same applies to the green luminescent layer 35g and the blue luminescent layer 35b.

[0147] According to the method involved in this embodiment 1, such as Figure 16 As shown, the blue luminescent material layer 64 is formed on the soluble portions 45C and 55C of the red upper positive resist layer 45 and the green upper positive resist layer 55. Unwanted portions of the blue luminescent material layer 64 (i.e., portions that do not form the blue luminescent layer 35b) are as follows: Figure 17 After being removed as shown, the soluble portions 45C and 55C of the red upper positive resist layer 45 and the green upper positive resist layer 55 are as shown. Figure 19 As shown, it is removed. Therefore, it is possible to reduce the amount of luminescent material in the blue luminescent layer 35b mixed as residue in the areas of the red sub-pixel Pr and the green sub-pixel Pg.

[0148] According to the method of Embodiment 1, after the formation of the red luminescent layer 35r, by exposure and reverse sintering, the insoluble portion 41A of the red lower reverse resist layer 41 becomes a re-insoluble portion 41D that is insoluble in the developer. Even with further exposure or sintering, the re-insoluble portion 41D remains insoluble in the developer. Therefore, in subsequent processes, the removal of the red luminescent layer 35r by the developer can be reduced. Similarly, the removal of the green luminescent layer 35g by the developer can be reduced. Therefore, the thicknesses of the red luminescent layer 35r, the green luminescent layer 35g, and the blue luminescent layer 35b can be easily controlled.

[0149] According to the method involved in this embodiment 1, such as Figure 19 As shown, the soluble portion 45C of the red upper positive resist layer 45 is removed. Therefore, in the display device 2, there is no resin layer from the red upper positive resist layer 45 or the red upper positive resist layer 45 on the red light-emitting layer 35r. Therefore, the luminous efficiency of the red sub-pixel Pr can be improved. Similarly, the luminous efficiency of the green sub-pixel Pg and the blue sub-pixel Pb can be improved.

[0150] Furthermore, since it is removed, even if the thickness of the red upper positive resist layer 45 is increased, the luminous efficiency of the red sub-pixel Pr will not be affected. Therefore, the thickness of the red upper positive resist layer 45 can be sufficiently increased so that the red luminescent layer 35r will not be damaged or thinned during the period from the formation of the red upper positive resist layer 45 to the removal of the soluble portion 45C of the red upper positive resist layer 45. Similarly, the thicknesses of the green upper positive resist layer 55 and the blue upper positive resist layer 65 can be sufficiently increased. Therefore, the thicknesses of the red luminescent layer 35r, the green luminescent layer 35g, and the blue luminescent layer 35b can be easily controlled.

[0151] According to the method of Embodiment 1, the red light-emitting layer 35r and the green light-emitting layer 35g are attached to the substrate via the insoluble portions 41D and 51D of the red lower negative resist layer 41 and the green lower reverse resist layer 51, respectively, during the development step using a strong developer. Therefore, it is possible to reduce the likelihood of the red light-emitting layer 35r and the green light-emitting layer 35g peeling off from the substrate during the manufacturing process.

[0152] According to the method described in Embodiment 1, the main sintering of the red lower reverse resist layer 41 and the green lower reverse resist layer 51 for thermosetting is performed, such as... Figure 5 The process can be performed in one step. Alternatively, the main sintering can be omitted. Therefore, it is possible to reduce the chemical or mechanical damage caused by heating or temperature changes during the main sintering process.

[0153] [Implementation Method 2] Hereinafter, another embodiment of the present invention will be described. Furthermore, for ease of explanation, components having the same function as those described in the first embodiment will be labeled with the same reference numerals and will not be described again.

[0154] Figure 35 This is a schematic cross-sectional view illustrating an example of the configuration of the light-emitting element layer 5 in the display device 2 according to Embodiment 2 of the present invention.

[0155] The difference between the light-emitting element layer 5 of Embodiment 2 and the light-emitting element layer 5 of Embodiment 1 is that a blue lower resin layer 34b is included between the hole transport layer 33 and the blue light-emitting layer 35b. In this case, the red lower resin layer 34r, the green lower resin layer 34g, and the blue lower resin layer 34b are collectively referred to as "lower resin layer 34". In other words, the light-emitting element layer 5 of Embodiment 2 differs from the light-emitting element layer 5 of Embodiment 1 in that it includes a lower resin layer 34 below all the light-emitting layers 35.

[0156] (Manufacturing method) The configuration of this embodiment 2 can be achieved by performing the process of forming all the light-emitting layers separately. Figure 6 The process shown is implemented using P1.

[0157] The following is for reference Figures 36-40 For forming on the substrate Figure 35 A detailed description will be given of an example of the process (step S4, light-emitting element formation process) of the light-emitting element layer 5 shown.

[0158] Figures 36-40 They are respectively showing the Figure 35 A schematic cross-sectional view of an example of the process (step S4) in which the light-emitting element layer 5 is formed on the substrate.

[0159] First, similar to the above-described implementation method 1, the following steps are performed: Figure 5 The process shown extends up to the step of forming a green light-emitting layer of 35g (step S26).

[0160] <Includes the process of forming a blue luminescent layer> Next, as Figure 6 as well as Figure 36 As shown, a process including the formation of a blue light-emitting layer 35b is performed (step S27). In step S27, the following steps are executed: Figure 6 The process shown is P1.

[0161] That is, firstly, such as Figure 6 and Figure 36As shown, a green lower reverse resist layer 61 (third reverse resist) is formed by coating the hole transport layer 33 and the soluble portions 45C and 55C of the red upper positive resist layer 45 and the green upper positive resist layer 55 with a reverse resist material, thereby forming the green lower reverse resist layer 61 (part of the third light-emitting layer formation process) (step S41). Next, a blue light-emitting material layer 64 and a blue upper positive resist layer 65 are formed (steps S42 and S43, part of the third light-emitting layer formation process). In this way, a laminate (third laminate) consisting of a blue lower reverse resist layer 61, a blue light-emitting material layer 64, and a blue upper positive resist layer 65 sequentially from the substrate side is formed.

[0162] Next, the laminate is exposed to ultraviolet light for the first time using a blue first mask 67 (part of step S44, the third light-emitting layer formation process). As a result, the portions of the blue lower reverse resist layer 61 and the blue upper positive resist layer 65 that overlap with the blue light-emitting layer 35b do not undergo photochemical reaction, remaining insoluble portions 61A and 65A that are insoluble in the developer. On the other hand, the other portions become soluble portions 61B and 65B that are soluble in the developer through photochemical reaction.

[0163] Next, as Figure 6 as well as Figure 37 As shown, development is performed using a strong developer (step S45, part of the third luminescent layer formation process). As a result, the soluble portions 61B and 65B in the blue lower reverse resist layer 61 and the blue upper positive resist layer 65, as well as the portion of the blue luminescent material layer 64 between the soluble portions 61B and 65B, are removed. On the other hand, the insoluble portions 51A and 55A in the blue lower reverse resist layer 61 and the blue upper positive resist layer 65, and the portion of the blue luminescent material layer 64 between the insoluble portions 61A and 65A, remain. The remaining portion of the blue luminescent material layer 64 becomes the blue luminescent layer 35b.

[0164] By using photolithography and the re-insolubility of the reverse resist, the above-mentioned laminate is patterned, resulting in the formation of a blue luminescent layer 35b.

[0165] Next, as Figure 6 and Figure 38 As shown, the patterned laminate is exposed a second time using ultraviolet light through a blue second mask 68 (step S46, part of the third insoluble process). As a result, the insoluble portions 61A and 65A of the blue lower reverse resist layer 61 and the blue upper positive resist layer 65 become soluble portions 61C and 65C that are soluble in the developer solution due to a photochemical reaction.

[0166] Next, as Figure 6 and Figure 39As shown, the patterned laminate is subjected to reverse sintering (step S47, part of the third re-insoluble process). As a result, the soluble portion 61C of the blue lower reverse resist layer 61 becomes a re-insoluble portion 61D that is insoluble in the developer due to decarboxylation. On the other hand, the soluble portion 65C of the blue upper positive resist layer 65 remains soluble portion 65C.

[0167] In step S27, as described above, the blue luminescent layer 35b is formed in a protected state between the insoluble portion 61D of the blue lower reverse resist layer 61 and the soluble portion 65C of the blue upper positive resist layer 65.

[0168] Then, similar to Embodiment 1 described above, a weak development process is performed. Figure 5 Step S28 (positive resist removal process) and subsequent processes. This forms... Figure 30 The light-emitting element layer 5 is shown.

[0169] (Effects) According to the method involved in this embodiment 2, such as Figure 36 As shown, the blue luminescent material layer 64 is formed on the blue underlying reverse resist layer 61, and the unwanted portions of the blue luminescent material layer 64 (i.e., the portions that do not become the blue luminescent layer 35b) are as follows. Figure 37 The soluble portion 61B shown is removed along with the blue underlayer reverse resist layer 61.

[0170] Therefore, according to the method of this Embodiment 2, compared with the method of Embodiment 1 described above, it is possible to reduce the amount of luminescent material of the blue luminescent layer 35b mixed as residue outside the formation region of the blue luminescent layer 35b. Specifically, it is possible to reduce the amount of luminescent material of the blue luminescent layer 35b mixed as residue on the sides of the red luminescent layer 35r and the green luminescent layer 35g, the sides of the red lower resin layer 34r and the green lower resin layer 34g, and the top surface of the hole transport layer 33.

[0171] According to the method of Embodiment 2, the blue light-emitting layer 35b is attached to the substrate via the insoluble portion 61D of the blue underlayer reverse resist layer 61 during the development process using a strong developer. Therefore, the risk of the blue light-emitting layer 35b peeling off from the substrate midway through the manufacturing process can be further reduced.

[0172] [Implementation Method 3] Hereinafter, another embodiment of the present invention will be described. Furthermore, for ease of explanation, components having the same function as those described in the first embodiment will be labeled with the same reference numerals and will not be described again.

[0173] Figure 41This is a schematic cross-sectional view illustrating an example of the configuration of the light-emitting element layer 5 in the display device 2 according to Embodiment 3 of the present invention.

[0174] The example of the light-emitting element layer 5 in this embodiment 3 differs from the example of the light-emitting element layer 5 in Embodiment 1 in that it includes a lower resin layer 34 below all the light-emitting layers 35, and a red upper resin layer 36r is included between the red light-emitting layer 35r and the electron transport layer 37.

[0175] (Manufacturing Method 1) The following is for reference Figures 42-44 For forming on the substrate Figure 41 An example of the process (step S4, light-emitting element formation process) of the light-emitting element layer 5 shown will be described in detail.

[0176] The configuration of this embodiment 2 can be achieved by... Figure 4 The steps shown Finally, step S25 is performed. Figure 42 The process P3 shown is implemented. Furthermore, steps S26 and S27 are executed. Figure 6 The process shown is P1.

[0177] Figure 42 It is shown that in order to form Figure 41 A simplified flowchart of the processing (process P3) performed on the light-emitting element layer 5 shown. Figure 43 It is shown Figure 42 The schematic cross-sectional view of process P3 shown is shown. Figure 44 It is shown Figure 42 The processing shown in P3 and described later Figure 45 The diagram shows a schematic cross-sectional view of the process P4.

[0178] First, similar to the modified embodiment 1 described above, a process including forming a blue light-emitting layer 35b is performed (step S27, first light-emitting layer formation process) and a process including forming a green light-emitting layer 35g is performed (step S26, second light-emitting layer formation process).

[0179] Next, a process including forming a red luminescent layer 35r is performed (step S25). Here, as... Figure 42 and Figure 43 As shown, a red lower positive resist layer 42 is formed by coating the hole transport layer 33 with a positive resist material all over its surface (part of step S48, the third light-emitting layer formation process). Next, a red light-emitting material layer 44 and a red upper positive resist layer 45 are formed all over its surface (part of steps S42, S43, the third light-emitting layer formation process).

[0180] In this way, a laminate (third laminate) is formed, in which a red luminescent material layer 44 (third luminescent material layer) is stacked between a lower red positive resist layer 42 and an upper red positive resist layer 45 (two positive resist layers). At this time, the lower red positive resist layer 42 and the upper red positive resist layer 45 are respectively insoluble in the developing solution.

[0181] Next, the above-mentioned stacked body is exposed to ultraviolet light using a red first mask 47 (step S49, part of the third light-emitting layer formation process). This process P3 and process P1 (refer to...) Figure 6 ) and processing P2 (refer to) Figure 7 Unlike other methods, it only requires one exposure.

[0182] As a result, the portions of the lower red positive resist layer 42 and the upper red positive resist layer 45 that overlap with the red luminescent layer 35r do not undergo photochemical reactions, remaining insoluble portions 42A and 45A insoluble in the developer. On the other hand, the other portions become soluble portions 42B and 45B soluble in the developer through photochemical reactions.

[0183] Next, as Figure 42 as well as Figure 44 As shown, strong development is performed (step S45, part of the third luminescent layer formation process). As a result, the soluble portions 42B and 45B of the lower red positive resist layer 42 and the upper red positive resist layer 45, as well as the portion of the red luminescent material layer 44 between the soluble portions 42B and 45B, are removed. On the other hand, the insoluble portions 42A and 45A of the lower red positive resist layer 42 and the upper red positive resist layer 45, as well as the portion of the red luminescent material layer 44 between the insoluble portions 42A and 45A, remain. This remaining portion of the red luminescent material layer 44 is the red luminescent layer 35r.

[0184] In step S25, as described above, the red luminescent layer 35r is formed in a state where the insoluble portions 42A and 45A sandwiched between the lower red positive resist layer 42 and the upper red positive resist layer 45 are protected.

[0185] Then, similar to Embodiment 1 described above, a weak development process is performed. Figure 5 Step S28) and the following processes. The insoluble portions 42A and 45A of the lower red positive resist layer 42 and the upper red positive resist layer 45 remain in their original state or undergo main sintering to become the lower red resin layer 34r and the upper red resin layer 36r, respectively. In this way, a lower red resin layer 34r and an upper red resin layer 36r are formed. Figure 41 The light-emitting element layer 5 is shown.

[0186] This method can also reduce the amount of luminescent material from each luminescent layer 35 that mixes into the area outside the formation region of the luminescent layer 35 as residue.

[0187] (Manufacturing Method 2) The following is for reference Figures 44-46 For forming on the substrate Figure 41 A detailed description will be given of an example of the process (step S4, light-emitting element formation process) of the light-emitting element layer 5 shown.

[0188] The configuration of this embodiment 2 can be achieved through Figure 5 The steps shown Step S25 is executed. Figure 45 The process P4 shown is implemented here. Steps S26 and S27 are executed. Figure 6 The process P1 is shown. Additionally, process P4 uses a negative resist material, thus allowing for the replacement of the steps. (Refer to Figure 5 The order of ).

[0189] Figure 45 It is shown that in order to form Figure 41 A schematic flowchart of other processes (process P4) performed on the light-emitting element layer 5 shown. Figure 46 It is shown Figure 45 The schematic cross-sectional view of process P4 shown.

[0190] First, similar to the modified embodiment 1 described above, a process including forming a blue light-emitting layer 35b is performed (step S27, first light-emitting layer formation process) and a process including forming a green light-emitting layer 35g is performed (step S26, second light-emitting layer formation process).

[0191] Next, a process including forming a red luminescent layer 35r is performed (step S25). Here, as... Figure 45 and Figure 46 As shown, a red lower negative resist layer 43 is formed by coating the entire surface of the hole transport layer 33 with a negative resist material (part of step S50, the third light-emitting layer formation process). Next, a red light-emitting material layer 44 is formed over the entire surface (part of step S42, the third light-emitting layer formation process). Then, a red upper negative resist layer 46 is formed by coating the entire surface of the red light-emitting material layer 44 with a negative resist material (part of step S51, the third light-emitting layer formation process). In this specification, "negative resist material" refers to a material containing a negative photoresist.

[0192] In this manner, a laminate (third laminate) is formed in which a red luminescent material layer 44 (third luminescent material layer) is stacked between a lower red negative resist layer 43 and an upper red negative resist layer 46 (two negative resist layers). At this time, the lower red negative resist layer 43 and the upper red negative resist layer 46 are insoluble in the developer solution.

[0193] Next, the above-mentioned laminate is exposed to ultraviolet light using a second red mask 48 (part of step S52, the third light-emitting layer formation process). This process P4 and process P1 (refer to...) Figure 6 ) and processing P2 (refer to) Figure 7 Unlike other methods, it only requires one exposure.

[0194] As a result, the portions of the lower red negative resist layer 43 and the upper red negative resist layer 46 that overlap with the red luminescent layer 35r become insoluble portions 43A and 46A insoluble in the developer solution due to photochemical reaction. On the other hand, the other portions do not undergo photochemical reaction and remain soluble portions 43B and 46B soluble in the developer solution.

[0195] Next, as Figure 45 as well as Figure 44 As shown, strong development is performed (step S45, part of the third luminescent layer formation process). Therefore, the soluble portions 43B and 46B of the lower red negative resist layer 43 and the upper red negative resist layer 46, and the portion of the red luminescent material layer 44 between the soluble portions 43B and 46B, are removed. On the other hand, the insoluble portions 43A and 46A of the lower red negative resist layer 43 and the upper red negative resist layer 46, and the portion of the red luminescent material layer 44 between the insoluble portions 43A and 46A, remain. This remaining portion of the red luminescent material layer 44 constitutes the red luminescent layer 35r.

[0196] In step S25, as described above, the red luminescent layer 35r is formed in a state where the insoluble portions 43A and 46A sandwiched between the lower red negative resist layer 43 and the upper red negative resist layer 46 are protected.

[0197] Then, similar to Embodiment 1 described above, a weak development process is performed. Figure 5 Step S28) and the following processes. The insoluble portions 43A and 46A of the red lower negative resist layer 43 and the red upper negative resist layer 46 remain in their original state or undergo main sintering to become the red lower resin layer 34r and the red upper resin layer 36r, respectively. In this way, a red lower resin layer 34r and a red upper resin layer 36r are formed. Figure 41 The light-emitting element layer 5 is shown.

[0198] This method can also reduce the amount of luminescent material from each luminescent layer 35 that mixes into the area outside the formation region of the luminescent layer 35 as residue.

[0199] (Effects) According to the method of this embodiment 3, compared with the method of embodiment 1 described above, it is possible to further reduce the amount of light-emitting material in each light-emitting layer mixed as residue into the formation area of ​​other light-emitting layers.

[0200] [Implementation Method 4] Hereinafter, another embodiment of the present invention will be described. Furthermore, for ease of explanation, components having the same function as those described in the first embodiment will be labeled with the same reference numerals and will not be described again.

[0201] Figure 47 This is a schematic cross-sectional view illustrating an example of the configuration of the light-emitting element layer 5 in the display device 2 according to Embodiment 4 of the present invention.

[0202] In this embodiment 4, the light-emitting element layer 5 differs from the example of the light-emitting element layer 5 in that it includes a patterned red hole transport layer 33r, a green hole transport layer 33g, and a blue hole transport layer 33b instead of a hole transport layer 33 formed over the entire surface.

[0203] (Manufacturing method) The following is for reference Figures 48-53 For forming on the substrate Figure 47 An example of the process (step S4, light-emitting element formation process) of the light-emitting element layer 5 shown will be described in detail.

[0204] Figures 48-53 They are respectively showing the Figure 47 A cross-sectional view of an example of the process (step S4, light-emitting element formation process) in which the light-emitting element layer 5 is formed on the substrate.

[0205] First, until it forms Figure 46 The hole injection layer process (step S23) shown in the process is performed in the same way as in Embodiment 1 above.

[0206] <Includes the processing for forming a red emitting layer and a red hole transport layer> Next, as Figure 48 As shown, a process including the formation of a red light-emitting layer 35r and a red hole transport layer 33r is performed (step S60). In step S60, the following steps are executed: Figure 49 The processing shown is P5. Figure 49 The process P5 shown is similar to the step (step S63) in that it includes the process of forming a hole transport material layer. Figure 6 The processing shown is different for P1.

[0207] That is, such as Figure 49 as well as Figure 51As shown, firstly, a red lower inversion resist layer 41 is formed over the entire surface (step S41). Next, a red hole transport material layer 71 (carrier transport material layer) is formed over the entire surface by depositing a hole transport material (material of the carrier transport layer) over the red lower inversion resist layer 41 by vapor deposition, or by coating the entire surface with a material containing a hole transport material (step S63). Next, a red luminescent material layer 44 and a red upper positive resist layer 45 are formed over the entire surface (steps S42, S43).

[0208] In this manner, a stack (first stack) is formed, which sequentially includes a red lower negative resist layer 41, a red hole transport material layer 71, a red light-emitting material layer 44, and a red upper positive resist layer 45, starting from the substrate side.

[0209] Next, as Figure 49 As shown, the steps are performed in the same manner as in Embodiment 1 described above. Step S45. Thus, the red hole transport material layer 71 and the red light-emitting material layer 44 are patterned together, and the remaining part of the red hole transport material layer 71 becomes the red hole transport layer 33r.

[0210] Next, the same steps as in Implementation Method 1 are performed. Step S47. Thus, the red luminescent layer 35r and the red hole transport material layer 33r are formed in a protected state between the insoluble portion 41D of the lower red negative resist layer 41 and the soluble portion 45C of the upper red positive resist layer 45.

[0211] <Includes processes for forming a green luminescent layer and a green hole transport layer> Next, as Figure 48 As shown, a process is performed to form a green light-emitting layer 35g and a green hole transport layer 33g (step S61). In step S61, the following steps are performed: Figure 49 The processing shown is P5.

[0212] That is, such as Figure 49 as well as Figure 52 As shown, firstly, a green lower-layer reverse resist layer 51 is formed over the entire surface (step S41). Next, a green hole transport material layer 72 is formed over the entire surface by depositing a hole transport material over the entire surface of the green lower-layer reverse resist layer 51, or by coating the entire surface with a material containing a hole transport material (step S63). Next, a green luminescent material layer 54 and a green upper-layer positive resist layer 55 are formed over the entire surface (steps S42, S43).

[0213] In this manner, a laminate is formed that sequentially includes a green lower inversion resist layer 51, a green hole transport material layer 72, a green light-emitting material layer 54, and a green upper positive resist layer 55, starting from the substrate side.

[0214] Next, as Figure 49 As shown, the steps are performed in the same manner as in Embodiment 1 described above. Step S45. Thus, the green hole transport material layer 72 and the green light-emitting material layer 54 are patterned together, and the remaining portion of the green hole transport material layer 72 becomes the green hole transport layer 33g.

[0215] Next, the same steps as in Implementation Method 1 are performed. Step S47. In step S26, as described above, the green light-emitting layer 35g and the green hole transport layer 33g are formed in a protected state between the insoluble portion 51D of the lower green reverse resist layer 51 and the soluble portion 55C of the upper green positive resist layer 55.

[0216] <Includes the processes for forming the blue emitting layer and the blue hole transport layer> Next, as Figure 48 As shown, a process including the formation of a blue light-emitting layer 35b and a blue hole transport layer 33b is performed (step S62). In step S62, the following steps are executed: Figure 50 The processing shown is P6. Figure 50 The process P6 shown is similar to the step (step S62) in that it includes the process of forming a hole transport material layer. Figure 7 The processing shown is different for P2.

[0217] That is, firstly, such as Figure 50 and Figure 53 As shown, a blue hole transport material layer 73 is formed over the entire surface by vapor deposition of hole transport material on the soluble portions 45C and 55C of the hole transport layer 31, the red upper positive resist layer 45, and the green upper positive resist layer 55, or by coating the entire surface with hole transport material (step S63). Next, a blue luminescent material layer 64 and a blue upper positive resist layer 65 are formed over the entire surface (steps S42 and S43).

[0218] In this way, a laminate is formed that sequentially includes a blue hole transport material layer 73, a blue light-emitting material layer 64, and a blue upper positive resist layer 65, starting from the substrate side.

[0219] Next, as Figure 50 As shown, the steps are performed in the same manner as in Embodiment 1 described above. Step S45. Thus, the blue hole transport material layer 73 and the blue light-emitting material layer 64 are patterned together, and the remaining part of the blue hole transport material layer 73 becomes the blue hole transport layer 33b.

[0220] Next, step S46 is performed in the same manner as in Embodiment 1 described above. As a result, the blue luminescent layer 35b and the blue hole transport layer 33b are formed in a state where they are protected beneath the soluble portion 65C of the upper blue positive resist layer 65.

[0221] Then, similar to Embodiment 1 described above, a weak development process is performed. Figure 5 Step S28) and the subsequent processes. This forms... Figure 47 The light-emitting element layer 5 is shown.

[0222] (Effects) According to the method of this embodiment 4, a pattern can also be formed in the red hole transport layer 33r corresponding to the red light-emitting layer 35r. Therefore, a red hole transport layer 33r suitable for the red light-emitting layer can be formed. In addition, it is possible to reduce the amount of hole transport material in the red hole transport layer 33r mixed as residue outside the formation area of ​​the red hole transport layer 33r. The same applies to the green hole transport layer 33g and the blue hole transport layer 33b.

[0223] Furthermore, the scope of this embodiment 4 is not limited to this, and includes various variations, including examples where the light-emitting layer patterns layers other than the hole transport layer, examples where the light-emitting layer patterns layers such as the hole transport layer together with the light-emitting layer in the above-described embodiments 2 and 3, and examples where only one or a few light-emitting layers are patterned together with the light-emitting layer to pattern layers such as the hole transport layer, etc.

[0224] [Summarize] The manufacturing method of the light-emitting device according to Embodiment 1 of the present invention is as follows: a light-emitting element forming step comprising forming a first light-emitting element comprising a first light-emitting layer on a substrate, the light-emitting element forming step comprising a first light-emitting layer forming step, wherein the first light-emitting layer forming step forms the first light-emitting layer by patterning a first laminate, wherein the first laminate comprises, sequentially stacked from the substrate side, a first reverse resist, a first light-emitting material layer comprising the light-emitting material of the first light-emitting layer, and a first positive resist.

[0225] The manufacturing method of the light-emitting device according to Embodiment 2 of the present invention is based on the method according to Embodiment 1. The first light-emitting layer forming step includes: a laminate forming step, forming each layer of the first laminate; a laminate exposure step, which exposes a portion of the first laminate after the laminate forming step; and a developing step, which removes the exposed portion of the first laminate by removing the exposed first reverse resist after the laminate exposure step.

[0226] The manufacturing method of the light-emitting device according to Embodiment 3 of the present invention is based on the method according to Embodiment 1 or 2. After the first light-emitting layer formation step, the light-emitting element formation step further includes a first insoluble step, so that the first reverse resist overlapping with the first light-emitting layer becomes insoluble after being soluble.

[0227] The manufacturing method of the light-emitting device according to Embodiment 4 of the present invention is based on the method according to Embodiment 3. The first insoluble step includes: a reverse resist exposure step, in which the first reverse resist is exposed; and a heating step, in which the exposed first reverse resist is heated after the reverse resist exposure step.

[0228] The manufacturing method of the light-emitting device according to Embodiment 5 of the present invention is based on the method according to Embodiment 3 or 4. In the light-emitting element forming step, a second light-emitting element is further formed on the substrate. The second light-emitting element includes a second light-emitting layer. The second light-emitting layer has a different material from the first light-emitting layer. The light-emitting element forming step also includes a second light-emitting layer forming step. The second light-emitting layer forming step is formed by patterning a second laminate after the first insoluble step. The second laminate is formed by sequentially stacking a second reverse resist, a second light-emitting material layer containing the light-emitting material of the second light-emitting layer, and a second positive resist from the substrate side.

[0229] The manufacturing method of the light-emitting device according to embodiment 6 of the present invention is based on the method according to embodiment 5. The light-emitting element forming step further includes a second re-insoluble step, which is performed after the second light-emitting layer forming step, so that the second reversing resist overlapping with the second light-emitting layer becomes insoluble after being soluble.

[0230] The manufacturing method of the light-emitting device according to embodiment 7 of the present invention is based on the method according to embodiment 6. The light-emitting element forming process further includes a positive resist removal process. The positive resist removal process is performed after the second insoluble process, and removes the first positive resist and the second positive resist from the upper layers of the first light-emitting layer and the second light-emitting layer, respectively.

[0231] The method for manufacturing a light-emitting device according to Embodiment 8 of the present invention is based on the method according to Embodiment 6 or 7. In the light-emitting element forming step, a third light-emitting element is further formed on the substrate. The third light-emitting element includes a third light-emitting layer. The third light-emitting layer has a material that is different from both the first light-emitting layer and the second light-emitting layer. The light-emitting element forming step also includes a third light-emitting layer forming step. The third light-emitting layer forming step is formed by patterning a third laminate after the second insoluble step. The third laminate is formed by sequentially stacking a third light-emitting material layer containing the light-emitting material of the third light-emitting layer and a third positive resist from the substrate side.

[0232] The method for manufacturing a light-emitting device according to Embodiment 9 of the present invention is based on the method according to Embodiment 6. In the process of forming the light-emitting element, a third light-emitting element is further formed. The third light-emitting element includes a third light-emitting layer. The third light-emitting layer has a material that is different from both the first light-emitting layer and the second light-emitting layer. The process of forming the light-emitting element also includes a process of forming a third light-emitting layer. The third laminate is formed by patterning the third laminate after the second insoluble process. The third laminate is formed by sequentially stacking a third reverse resist, a third light-emitting material layer containing the light-emitting material of the third light-emitting layer, and a third positive resist from the substrate side.

[0233] The manufacturing method of the light-emitting device according to embodiment 10 of the present invention is based on the method according to embodiment 9. The light-emitting element forming step further includes a third re-insoluble step. The third re-insoluble step is performed after the third light-emitting layer forming step, so that the third reverse resist overlapping with the third light-emitting layer becomes insoluble after being soluble.

[0234] The method for manufacturing a light-emitting device according to embodiment 11 of the present invention is based on the method according to embodiment 10. The light-emitting element forming process further includes a positive resist removal process. The positive resist removal process removes the first positive resist, the second positive resist, and the third positive resist from the first light-emitting layer, the second light-emitting layer, and the upper layer of each light-emitting layer, respectively, after the third insoluble process.

[0235] The method for manufacturing a light-emitting device according to Embodiment 12 of the present invention is based on the method according to Embodiment 6 or 7. In the light-emitting element forming step, a third light-emitting element is further formed on the substrate. The third light-emitting element includes a third light-emitting layer. The third light-emitting layer has a material that is different from both the first light-emitting layer and the second light-emitting layer. The light-emitting element forming step also includes a third light-emitting layer forming step. The third light-emitting layer forming step is formed by patterning a third laminate after the second insoluble step. The third laminate is formed by stacking a third light-emitting material layer containing the light-emitting material of the third light-emitting layer between two layers of third positive resist.

[0236] The method for manufacturing a light-emitting device according to Embodiment 13 of the present invention is based on the method according to Embodiment 6 or 7. In the process of forming the light-emitting element, a third light-emitting element is further formed on the substrate. The third light-emitting element includes a third light-emitting layer. The third light-emitting layer has a material that is different from both the first light-emitting layer and the second light-emitting layer. The process of forming the light-emitting element also includes a process of forming a third light-emitting layer, which involves patterning a third layer of light-emitting material containing the light-emitting material of the third light-emitting layer between two layers of negative resist to form the third light-emitting layer.

[0237] The manufacturing method of the light-emitting device according to Embodiment 14 of the present invention is based on the method according to any one of Embodiments 1 to 13, wherein the first light-emitting element further comprises: a lower electrode between the substrate and the first light-emitting layer, a carrier transport layer between the lower electrode and the first light-emitting layer, the first laminate further comprising a carrier transport material layer laminated between the first reverse resist and the first light-emitting material layer, the carrier transport material layer comprising the material of the carrier transport layer, and in the first light-emitting layer forming step, the carrier transport material layer is further patterned to form the carrier transport layer.

[0238] The light-emitting device according to Embodiment 15 of the present invention includes: a substrate; and a first light-emitting element on the substrate, which comprises a first lower electrode, a first light-emitting layer and a first upper electrode stacked sequentially from the substrate side; the first light-emitting element further comprises a photosensitive resin layer between the first lower electrode and the first light-emitting layer, the photosensitive resin layer containing at least one of the compounds selected from the group consisting of compounds represented by the following structural formulas (1) to (3).

[0239] [Chemistry 7] Here, R1 and R2 each independently represent substituted or unsubstituted hydrocarbon groups.

[0240] The light-emitting device according to embodiment 16 of the present invention, based on the configuration according to embodiment 15, may also include at least one of the group consisting of an aromatic hydrocarbon having a hydroxyl group, 1-hydroxyethyl-2-alkylimidazoline and shellac in the photosensitive resin layer.

[0241] The light-emitting device according to embodiment 17 of the present invention is based on the configuration described in embodiment 15 or 16 above, and may also contain quantum dots as light-emitting materials in the first light-emitting layer.

[0242] The light-emitting device according to embodiment 18 of the present invention is based on the configuration of any of the embodiments 15 to 17 described above, wherein the first light-emitting layer contains a positive photosensitive resin.

[0243] The light-emitting device according to embodiment 19 of the present invention is based on the configuration of any of the embodiments 15 to 18 described above, wherein the first lower electrode is a cathode, the first upper electrode is an anode, and the first light-emitting element further comprises an electron transport layer between the first lower electrode and the photosensitive resin layer, wherein the electron affinity of the photosensitive resin layer is less than the electron affinity of the electron transport layer and less than the electron affinity of the first light-emitting layer.

[0244] The light-emitting device according to embodiment 20 of the present invention is based on the configuration of any of the embodiments 15 to 18 described above, wherein the first lower electrode is a cathode, the first upper electrode is an anode, and the first light-emitting element further comprises an electron transport layer between the first lower electrode and the photosensitive resin layer, wherein the electron affinity of the photosensitive resin layer is less than the electron affinity of the electron transport layer and greater than the electron affinity of the first light-emitting layer.

[0245] The light-emitting device according to embodiment 21 of the present invention is based on the configuration of any of the embodiments 15 to 18 described above, wherein the first lower electrode is an anode, the first upper electrode is a cathode, and the first light-emitting element further comprises a hole transport layer between the first lower electrode and the photosensitive resin layer, wherein the ionization energy of the photosensitive resin layer is greater than the ionization energy of the hole transport layer and greater than the ionization energy of the first light-emitting layer.

[0246] The light-emitting device according to embodiment 22 of the present invention is based on the configuration of any of the embodiments 15 to 18 described above, wherein the first lower electrode is an anode, the first upper electrode is a cathode, and the first light-emitting element further comprises a hole transport layer between the first lower electrode and the photosensitive resin layer, wherein the ionization energy of the photosensitive resin layer is greater than the ionization energy of the hole transport layer and less than the ionization energy of the first light-emitting layer.

[0247] The light-emitting device according to embodiment 23 of the present invention is based on the configuration of any of the embodiments 15 to 22 described above, except that only the first light-emitting element has the photosensitive resin layer.

[0248] The light-emitting device according to embodiment 24 of the present invention is based on the configuration of any of the embodiments 15 to 22 described above, and further includes a second light-emitting element on the substrate. The second light-emitting element includes a second lower electrode, a second light-emitting layer having a material different from the first light-emitting layer, and a second upper electrode stacked sequentially from the substrate side. The second light-emitting element also has the photosensitive resin layer between the second lower electrode and the second light-emitting layer.

[0249] The light-emitting device according to embodiment 25 of the present invention is based on the configuration according to embodiment 24 above, and further includes a third light-emitting element on the substrate. The third light-emitting element includes a third lower electrode, a third light-emitting layer having a material different from the first light-emitting layer and the second light-emitting layer, and a third upper electrode stacked sequentially from the substrate side.

[0250] The light-emitting device according to embodiment 26 of the present invention is based on the configuration according to embodiment 24 above, and further includes a third light-emitting element on the substrate. The third light-emitting element includes a third lower electrode, a third light-emitting layer having the same material as the first light-emitting layer and the second light-emitting layer, and a third upper electrode stacked sequentially from the substrate side. Only the first light-emitting element and the second light-emitting element have the photosensitive resin layer.

[0251] The light-emitting device according to embodiment 27 of the present invention is based on the configuration according to embodiment 25 or 26 above, wherein the first light-emitting element is a red light-emitting element that includes a red light-emitting layer as the first light-emitting layer, the second light-emitting element is a green light-emitting element that includes a green light-emitting layer as the second light-emitting layer, and the third light-emitting element is a blue light-emitting element that includes a blue light-emitting layer as the third light-emitting layer.

[0252] The light-emitting device according to embodiment 28 of the present invention is based on the configuration according to embodiment 27 above, and includes: a display area having a plurality of pixels and a border area surrounding the display area, wherein the plurality of pixels respectively have the red light-emitting element, the green light-emitting element and the blue light-emitting element, and the substrate has a thin film transistor layer that drives the red light-emitting element, the green light-emitting element and the blue light-emitting element respectively.

[0253] This invention is not limited to the embodiments described above, and various modifications can be made within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of this invention. Moreover, new technical features can be formed by combining the technical methods disclosed in each embodiment. Explanation of reference numerals in the attached figures

[0254] 2. Display device (light-emitting device) 10. Substrate (underlayment) 22 Anode (lower electrode, first lower electrode, second lower electrode, third lower electrode) (electrode, upper electrode, first upper electrode) 25 Cathodes (Upper Electrode, First Upper Electrode, Second Upper Electrode, Third Upper Electrode) (electrode, lower electrode, first lower electrode) 33. Hole transport layer (carrier transport layer) 33r Red Hole Transport Layer (Carrier Transport Layer) 33g Green Hole Transport Layer (Carrier Transport Layer) 33b Blue hole transport layer (carrier transport layer) 34R Red Lower Resin Layer (Photosensitive Resin Layer) 34g green lower resin layer (photosensitive resin layer) 34b Blue lower resin layer (photosensitive resin layer) 35r red luminescent layer (first luminescent layer, third luminescent layer) 35g green luminescent layer (second luminescent layer) 35b blue luminescent layer (third luminescent layer, first luminescent layer) 37. Electron transport layer (carrier transport layer) 41. Red lower layer reverse resist layer (first reverse resist, third reverse resist) 42. Red lower layer positive resist layer (one of two layers of third positive resist) 43. Red lower negative resist layer (one of two negative resist layers) 44. Red luminescent material layer (first luminescent material layer, third luminescent material) 45 Red upper layer positive resist layer (first positive resist and second layer of second positive resist) (another layer of the agent) 46. ​​Red upper negative resist layer (another layer of two negative resist layers) 51 Green underlayer reverse resist layer (second reverse resist) 54 Green luminescent material layer (second luminescent material layer) 55 Green upper positive resist layer (second positive resist) 61. Blue underlayer reverse resist layer (third reverse resist, first reverse resist) 64 Blue luminescent material layers (third luminescent material layer, first luminescent material layer) 65 Blue upper layer positive resist layer (third positive resist, first positive resist) 70mm mother glass (substrate) 71. Red Hole Transport Material Layer (Carrier Transport Material Layer) 72 Green Hole Transport Material Layer (Carrier Transport Material Layer) 73 Blue Hole Transport Material Layer (Carrier Transport Material Layer) Pr red sub-pixel (first light-emitting element, red light-emitting element) Pg green sub-pixel (second light-emitting element, green light-emitting element) Pb blue subpixel (third light-emitting element, blue light-emitting element)

Claims

1. A light-emitting device, characterized in that, include: Substrate; and The first light-emitting element on the substrate comprises, in sequence from the substrate side, a first lower electrode, a first light-emitting layer, and a first upper electrode; The first light-emitting element further comprises a photosensitive resin layer between the first lower electrode and the first light-emitting layer. The photosensitive resin layer contains at least one compound selected from the group consisting of compounds represented by the following structural formulas (1) to (3), wherein R1 and R2 each independently represent a substituted or unsubstituted hydrocarbon group. [Chemistry 1] 。 2. The light-emitting device according to claim 1, characterized in that, The photosensitive resin layer comprises at least one selected from the group consisting of an aromatic hydrocarbon having a hydroxyl group, 1-hydroxyethyl-2-alkylimidazoline, and shellac.

3. The light-emitting device according to claim 1 or 2, characterized in that, The first light-emitting layer contains quantum dots as the light-emitting material.

4. The light-emitting device according to claim 1 or 2, characterized in that, The first light-emitting layer contains a positive photosensitive resin.

5. The light-emitting device according to claim 1 or 2, characterized in that, The first lower electrode is the cathode, and the first upper electrode is the anode. The first light-emitting element further includes an electron transport layer between the first lower electrode and the photosensitive resin layer. The electron affinity of the photosensitive resin layer is less than that of the electron transport layer and less than that of the first light-emitting layer.

6. The light-emitting device according to claim 1 or 2, characterized in that, The first lower electrode is the cathode, and the first upper electrode is the anode. The first light-emitting element further includes an electron transport layer between the first lower electrode and the photosensitive resin layer. The electron affinity of the photosensitive resin layer is less than that of the electron transport layer, but greater than that of the first light-emitting layer.

7. The light-emitting device according to claim 1 or 2, characterized in that, The first lower electrode is the anode, and the first upper electrode is the cathode. The first light-emitting element further includes a hole transport layer between the first lower electrode and the photosensitive resin layer. The ionization energy of the photosensitive resin layer is greater than that of the hole transport layer and greater than that of the first light-emitting layer.

8. The light-emitting device according to claim 1 or 2, characterized in that, The first lower electrode is the anode, and the first upper electrode is the cathode. The first light-emitting element further includes a hole transport layer between the first lower electrode and the photosensitive resin layer. The ionization energy of the photosensitive resin layer is greater than that of the hole transport layer, but less than that of the first light-emitting layer.

9. The light-emitting device according to claim 1 or 2, characterized in that, Only the first light-emitting element has the photosensitive resin layer.

10. The light-emitting device according to claim 1 or 2, characterized in that, It also includes a second light-emitting element on the substrate, the second light-emitting element comprising, sequentially stacked from the substrate side, a second lower electrode, a second light-emitting layer having a different material from the first light-emitting layer, and a second upper electrode. The second light-emitting element also has the photosensitive resin layer between the second lower electrode and the second light-emitting layer.

11. The light-emitting device according to claim 10, characterized in that, It also includes a third light-emitting element on the substrate, wherein the third light-emitting element comprises, in sequence from the substrate side, a third lower electrode, a third light-emitting layer having a material different from the first light-emitting layer and the second light-emitting layer, and a third upper electrode.

12. The light-emitting device according to claim 10, characterized in that, It also includes a third light-emitting element on the substrate, wherein the third light-emitting element comprises, sequentially stacked from the substrate side, a third light-emitting layer having a material different from the first light-emitting layer and the second light-emitting layer, and a third upper electrode. Only the first light-emitting element and the second light-emitting element have the photosensitive resin layer.

13. The light-emitting device according to claim 11, characterized in that, The first light-emitting element is a red light-emitting element that includes a red light-emitting layer as the first light-emitting layer. The second light-emitting element is a green light-emitting element that includes a green light-emitting layer as the second light-emitting layer. The third light-emitting element is a blue light-emitting element that includes a blue light-emitting layer as the third light-emitting layer.

14. The light-emitting device according to claim 13, characterized in that, Includes: a display area having multiple pixels and a border area surrounding the display area. Each of the plurality of pixels has a red light-emitting element, a green light-emitting element, and a blue light-emitting element. The substrate has thin-film transistor layers that drive the red light-emitting element, the green light-emitting element, and the blue light-emitting element, respectively.

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