Active-cooled frontline-pipeline trap for reducing choke valve drift

Abstract

An example semiconductor processing system includes a process chamber defining a process region. The semiconductor processing system can include a foreline coupled with the process chamber. The foreline can define a fluid conduit. The semiconductor processing system can include a foreline trap coupled with a distal end of the foreline. The semiconductor processing system can include a removable insert provided within an interior of the foreline trap. The semiconductor processing system can include a throttle valve coupled with the foreline trap downstream of the removable insert.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit and priority of U.S. Patent Application No. 17 / 108,583, filed December 1, 2020, entitled “ACTIVELY COOLED FORELINE TRAP TOREDUCE THROTTLE VALVE DRIFT,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] This technology relates to components and equipment used in semiconductor manufacturing. More specifically, this technology relates to processing chamber components and other semiconductor processing equipment. Background Technology

[0004] Integrated circuits are made possible by processes that create complex patterned material layers on substrate surfaces. Creating patterned materials on a substrate requires controlled methods for material formation and removal. Precursors are typically delivered to processing areas and distributed to uniformly deposit or etch material onto the substrate. Many aspects of the processing chamber can affect process uniformity, such as the uniformity of process conditions within the chamber, the uniformity of flow through the component, and other process and component parameters. Even minute differences across the substrate can affect the formation or removal process.

[0005] Therefore, there is a need for improved systems and methods to produce high-quality devices and structures. This technology addresses these and other needs. Summary of the Invention

[0006] An exemplary semiconductor processing system includes a processing chamber defining a processing region. The semiconductor processing system may include a pre-channel conduit coupled to the processing chamber. The pre-channel conduit may define a fluid conduit. The semiconductor processing system may include a pre-channel conduit trap coupled to a distal end of the pre-channel conduit. The semiconductor processing system may include a removable insert provided within the pre-channel conduit trap. The semiconductor processing system may include a throttling valve coupled downstream of the removable insert to the pre-channel conduit trap.

[0007] In some embodiments, a semiconductor processing system can include a cooling fluid source. The semiconductor processing system can include a fluid line coupling the cooling fluid source with a removable insert. The removable insert can be characterized by one or more sidewalls defining an open interior. At least one of the one or more sidewalls can define a plurality of apertures extending through a thickness of the at least one sidewall. Each of the plurality of apertures can have a diameter between about 3 mm and 25 mm. Each of the plurality of apertures can have a circular shape. Each of the plurality of apertures can have a same diameter. The removable insert can include a solid base coupled with the one or more sidewalls. Each of the one or more sidewalls can have a thickness less than or about 0.5 inches. The semiconductor processing system can include an additional foreline coupled with a process chamber. The foreline trap can include a first inlet fluidically coupled with the foreline. The foreline trap can include a second inlet fluidically coupled with the additional foreline. The foreline trap can include an outlet fluidically coupled with a throttle valve. The removable insert can be disposed downstream of the first inlet and the second inlet and upstream of the outlet. The semiconductor processing system can include a collar removably coupling the removable insert with the foreline trap.

[0008] Some embodiments of the present technology can contain a semiconductor processing system. The system can include a process chamber defining a processing region. The system can include a foreline coupled with the process chamber. The foreline can define a fluid conduit. The system can include a removable insert provided within an interior of the fluid conduit. The system can include a cooling fluid source. The system can include a fluid line coupling the cooling fluid source with the removable insert. The system can include a throttle valve coupled with the foreline downstream of the removable insert.

[0009] In some embodiments, the foreline can include a foreline trap coupled with the throttle valve. The removable insert can be disposed within the foreline trap. The foreline trap can include a first flange. The removable insert can include a second flange. The system can include a removable collar securing the first flange and the second flange together. The removable insert can include an insert body having a cross-section of a cross shape. The removable insert can include a solid base coupled with one or more sidewalls defining an open interior. The system can include a cooling block coupling the fluid line with the solid base. The cooling block can be removably coupled with the solid base. At least one of the one or more sidewalls can define a plurality of apertures extending through a thickness of the at least one sidewall.

[0010] Some embodiments of the present technology can include methods of semiconductor processing. The methods can include flowing a precursor into a processing chamber. The methods can include generating a plasma of the precursor within a processing region of the processing chamber. The methods can include depositing a material on a substrate disposed within the processing region. The methods can include exhausting the precursor from the processing chamber via at least one foreline, a foreline trap, and a throttle valve. A removable insert can be disposed within the foreline trap.

[0011] In some embodiments, the methods can include actively cooling the removable insert while exhausting the precursor. The step of actively cooling the removable insert can include circulating a cooling fluid through a cooling block coupled to the removable insert.

[0012] The technology can provide many benefits over conventional systems and techniques. For example, embodiments of the present technology can utilize an actively cooled insert within a foreline trap to collect residue from a process gas before the gas reaches a throttle valve. Further, components can allow for modification to accommodate any number of chambers or processes. These and other embodiments and many of their advantages and features are described in more detail in conjunction with the following description and drawings. BRIEF DESCRIPTION OF DRAWINGS

[0013] A further understanding of the nature and advantages of the disclosed technology can be realized by reference to the remaining portions of the specification and the drawings.

[0014] Figure 1 A top plan view of an exemplary processing system according to some embodiments of the present technology is shown.

[0015] Figure 2 A schematic cross-sectional view of an exemplary plasma system according to some embodiments of the present technology is shown.

[0016] Figure 3 A schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology is shown.

[0017] Figure 3A A schematic cross-sectional view of a chamber exhaust component according to some embodiments of the present technology is shown.

[0018] Figure 4 A schematic isometric view of an exemplary removable foreline trap insert according to some embodiments of the present technology is shown.

[0019] Figure 5 A schematic isometric view of an exemplary removable foreline trap insert according to some embodiments of the present technology is shown.

[0020] Figure 6Operations of an exemplary semiconductor processing method according to some embodiments of the present technology are shown.

[0021] Several of the figures, including the drawings accompanying the specification, are schematic representations of embodiments of the present technology. Unless otherwise specified, it is to be understood that the use of the singular includes the plural and vice versa, and that the terms "a" or "an" mean "one or more". It is also to be understood that the terms "including", "has" and / or "having", "with" and / or "containing", are inclusive or open-ended and do not exclude additional, unrecited elements or method steps. As used herein, the term "exemplary" means "an example of." As used herein, the term "or" as used herein, without additional context, shall generally be interpreted to mean "and / or" unless otherwise stated.

[0022] In the drawings, like reference numerals can be used to denote similar components throughout the several views. Further, various components of the same type can be distinguished by following the ref- erence numerals by the first occurrence of the letters "a" through "l" among the reference numerals of the various components. If first reference numerals are used with no letters, the whole of the reference numerals are to be construed as being the same components unless otherwise indicated. DETAILED DESCRIPTION

[0023] Plasma enhanced deposition processes can excite one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be produced to form a semiconductor structure, including conductive and dielectric films, as well as films for facilitating material transport and removal. For example, a hardmask film can be formed to facilitate patterning of a substrate while protecting underlying material to be otherwise maintained. In many processing chambers, a number of precursors can be mixed in a gas panel and delivered to a processing region of a chamber in which a substrate can be disposed. While components of the lid stack can influence the flow distribution into the processing chamber, many other process variables can similarly influence the uniformity of deposition.

[0024] Precursors and / or other process gases are typically exhausted from the chamber through a plurality of foreline conduits. The pressure and fluid conductance of the exhausted gases can be controlled by one or more throttling valves coupled with the foreline conduits. As the precursors pass through the foreline conduits and throttling valves, radicals from the precursors impinge on the interior of the foreline conduits and throttling valves, causing deposits to build up on the foreline conduits and throttling valves. As these deposits build up within the throttling valves, the deposits reduce the cross-sectional area of the flow path of the throttling valve, which effectively changes the flow conductance through the throttling valve and causes the throttling valve to drift. For example, over time, the build-up of deposits requires the throttling valve to be opened to a greater extent (drift) to maintain the desired conductance as the cross-sectional area of the flow path is reduced. This throttling drift changes the cross-sectional area of the flow path associated with each angle of the throttling valve, and over time, requires the throttling valve to be opened to a greater angle to account for the reduced conductance and pressure changes of the gases flowing through the throttling valve. At greater angles, the throttling valve becomes more difficult to control to deliver precise conductance and fluid pressure.

[0025] Traditionally, to combat the effects of throttle valve drift, high temperature purge gases (such as NF3) must be used to flush the foreline and throttle valve to remove residue and clean the surface of the throttle valve. However, these high temperature purge gases can be harmful to chamber components. Thus, conventional systems must carefully balance the need to reverse and / or reduce throttle valve drift with the need to minimize exposure of chamber components to such high temperature purge gases.

[0026] The present technology overcomes these challenges by utilizing a foreline trap that receives a removable insert that collects residue upstream of the throttle valve. The insert can be removed from the foreline trap for cleaning or replacement without needing to clean or replace the foreline or throttle valve. Embodiments can actively cool the insert, which can further enhance the insert’s ability to collect residue from the precursor. As such, the present technology can reduce the occurrence of throttle valve drift and reduce (or eliminate) the need for high temperature throttle valve purging.

[0027] While the remaining disclosure will routinely identify particular deposition processes with which the disclosed technology is utilized, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers, and processes that can occur in such chambers. As such, the technology should not be considered limited to use with these particular deposition processes or chambers. The present disclosure will discuss one possible system and chamber that can include a lid stack component in accordance with embodiments of the present technology, and then describe additional variations and adaptations to such a system in accordance with embodiments of the present technology.

[0028] Figure 1 A top plan view of one embodiment of a processing system 100 of deposition, etch, bake, and cure chambers in accordance with embodiments is shown. In the figure, a pair of front opening unified pods 102 supply substrates of various sizes that are received by a robot arm 104 and placed into a low pressure holding area 106, and then placed into one of substrate processing chambers 108a-f positioned in in-line sections 109a-c. A second robot arm 110 can be used to transfer substrate wafers from the holding area 106 to the substrate processing chambers 108a-f and back. Each substrate processing chamber 108a-f can be equipped to perform a number of substrate processing operations, including forming the stacks of semiconductor materials described herein, as well as plasma enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and other substrate processes, including annealing, ashing, etc.

[0029] The substrate processing chambers 108a-f can include one or more system components for depositing, annealing, curing, and / or etching dielectric or other films on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) can be used to deposit dielectric material on a substrate, while a third pair of processing chambers (e.g., 108a-b) can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-f) can be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the processes described can be performed in chambers separate from the manufacturing system shown in different embodiments. It is understood that the system 100 contemplates additional configurations of deposition, etching, annealing, and curing chambers for dielectric films.

[0030] Figure 2 A schematic cross-sectional view of an exemplary plasma system 200 according to some embodiments of the present technology is shown. The plasma system 200 can illustrate a pair of processing chambers 108 that can be fitted in one or more of the tandem sections 109 described above, and can include faceplates or other components or assemblies according to embodiments of the present technology. The plasma system 200 can generally include a chamber body 202 having sidewalls 212, a bottom wall 216, and an interior sidewall 201 to define a pair of processing regions 220A and 220B. Each of the processing regions 220A-B can be similarly configured and can include the same components.

[0031] For example, components of the processing region 220B can also be included in the processing region 220A, the processing region 220B can include a pedestal 228 disposed in the processing region through a passage 222 formed in the bottom wall 216 in the plasma system 200. The pedestal 228 can provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 can include a heating element 232, such as a resistive heating element, that can heat and control the substrate temperature at a desired processing temperature. The pedestal 228 can also be heated by a remote heating element, such as a lamp assembly or any other heating device.

[0032] The body of pedestal 228 can be coupled to stem 226 by flange 233. Stem 226 can electrically couple pedestal 228 with a power outlet or power box 203. Power box 203 can include a drive system that controls the lift and motion of pedestal 228 within processing region 220B. Stem 226 can also include a power interface to provide power to pedestal 228. Power box 203 can also include an interface for power and temperature indicators, such as thermocouple interfaces. Stem 226 can include a base assembly 238 adapted to be removably coupled with power box 203. A circumferential ring 235 is shown above power box 203. In some embodiments, circumferential ring 235 can be a shoulder adapted to act as a mechanical stop or platform configured to provide a mechanical interface between base assembly 238 and an upper surface of power box 203.

[0033] Linkage 230 can be included through a passage 224 formed in a bottom wall 216 of processing region 220B and can be used to position a substrate lift pin 261 disposed through the body of pedestal 228. Substrate lift pin 261 can selectively space a substrate 229 from the pedestal to facilitate exchange of substrate 229 with a robot for transporting substrate 229 into and out of processing region 220B via a substrate transport port 260.

[0034] Chamber lid 204 can be coupled with a top portion of chamber body 202. Lid 204 can house one or more precursor distribution systems 208 coupled to lid 204. Precursor distribution systems 208 can include precursor inlet passages 240 that can deliver reactants and cleaning precursors into processing region 220B via a gas delivery assembly 218. Gas delivery assembly 218 can include a gas box 248 having a baffle plate 244 disposed intermediate a faceplate 246. A radio frequency (“RF”) source 265 can be coupled with gas delivery assembly 218, which can power gas delivery assembly 218 to facilitate creation of a plasma region between faceplate 246 of gas delivery assembly 218 and pedestal 228, which can be a processing region of the chamber. In some embodiments, the RF source can be coupled with other portions of chamber body 202, such as pedestal 228, to facilitate creation of a plasma. A dielectric isolator 258 can be disposed between lid 204 and gas delivery assembly 218 to prevent conduction of RF power to lid 204. A shadow ring 206 can be disposed on a periphery of pedestal 228 that engages pedestal 228.

[0035] An optional cooling channel 247 can be formed in the gas box 248 of the precursor distribution system 208 to cool the gas box 248 during operation. A heat transfer fluid, such as water, ethylene glycol, gas, etc., can be circulated through the cooling channel 247 such that the gas box 248 can be maintained at a predefined temperature. A liner assembly 227 can be disposed within the processing region 220B proximate to the sidewalls 201, 212 of the chamber body 202 to prevent the sidewalls 201, 212 from being exposed to the processing environment within the processing region 220B. The liner assembly 227 can include a peripheral pumping cavity 225 that can be coupled to a pumping system 264 configured to exhaust gases and byproducts from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 can be formed on the liner assembly 227. The exhaust ports 231 can be configured to allow gases to flow from the processing region 220B to the peripheral pumping cavity 225 in a manner that facilitates processing within the plasma system 200.

[0036] Figure 3 A schematic partial cross-sectional view of an exemplary processing system 300 is shown in accordance with some embodiments of the present technology. Figure 3 Further details relating to components in the plasma system 200 can be illustrated. The system 300 is understood to include any features or aspects of the plasma system 200 previously discussed in some embodiments. The system 300 can be used to perform semiconductor processing operations, including deposition of hardmask material as previously described, as well as other deposition, removal, and cleaning operations. The system 300 can show partial views of chamber components that are under discussion and can be incorporated into semiconductor processing systems, and can illustrate views across the center of a faceplate, which can otherwise have any size and include any number of apertures. Any aspects of the system 300 can also be incorporated with other processing chambers or systems as would be readily understood by one of skill in the art.

[0037] The system 300 can include a processing chamber including a faceplate 305 through which precursors can be delivered for processing and which can be coupled with a power source for generating a plasma within a processing region of the chamber. The chamber can also include a chamber body 310, which as shown can include sidewalls and a base. As previously discussed, a susceptor or substrate support 315 can extend through the base of the chamber. The substrate support 315 can include a support plate 320, which can support a semiconductor substrate. The support plate 320 can be coupled with a shaft 325, which can extend through the base of the chamber.

[0038] The faceplate 305 can be directly or indirectly supported by the chamber body 310. As one example only, the faceplate 305 can be supported on top of a pumping liner 330 and / or isolator or other liner 335. For example, the pumping liner 330 can be seated on a shelf formed by the top of the chamber body 310, with the additional liner 335 and / or faceplate 305 seated on top of the pumping liner 330. The pumping liner 330 can define one or more exhaust ports 340 that enable gas to flow from the processing region to one or more foreline conduits 350 coupled to the processing chamber. For example, each exhaust port 340 can be fluidly coupled to a top end of one or more exhaust lumens 345 formed within the sidewall and / or base of the chamber body 310. The bottom end of the exhaust lumens 345 can be coupled to a respective one of the foreline conduits 350. Each foreline conduit 350 can define a fluid conduit for flowing process gas away from the processing chamber and directing the process gas through a throttle valve 355, which can control the fluid conductance through the foreline conduit 350. The foreline conduits 350 can be coupled to a foreline trap 360, which can be coupled between the distal end of each foreline conduit 350 and the proximal end of the throttle valve 355. The foreline trap 360 can include an inlet 365 coupled to each of the foreline conduits 350. For example, in the illustrated embodiment, the foreline trap 360 includes two inlets 365, each coupled to a respective one of the two foreline conduits 350. The foreline trap 360 can also include an outlet 370 fluidly coupled to the throttle valve 355. The foreline trap 360 can also include a trap portion 375 disposed between the inlets 365 and the outlet 370, with the inlets 365 upstream of the trap portion 375 and the outlet 370 downstream of the trap portion 375. As one example only, the inlets 365 can be coaxial with one another, with the trap portion 375 coupled to the inlets 365 at a generally orthogonal angle, creating a T-junction. The outlet 370 can branch from the trap portion 375 at an angle, such as a generally orthogonal angle.

[0039] As Figure 3AAs best illustrated, a removable insert 380 can be provided within the interior of the foreline trap 360. For example, the insert 380 can be disposed within the trap portion 375. The insert 380 can function as a collection point for residue and / or other deposits caused by free radicals from the process gas flowing through the foreline 350 prior to the gas reaching the throttle valve 355. For example, the insert 380 can provide a large surface area on which residue can be deposited prior to the process gas reaching the throttle valve 355. The insert 380 can have any size and / or shape to fit within the foreline trap 360 while facilitating gas flow to the throttle valve 355. For example, as illustrated, the insert 380 is a tubular element having one or more sidewalls defining an open interior. The tubular element can have any cross-sectional shape, including circular, oval, rectangular, triangular, etc. One or more of the sidewalls of the tubular element can define a plurality of apertures 384 extending through the thickness of the respective sidewall. The apertures 384 can maintain sufficient fluid flow conductance through the foreline trap 360, the insert 380, and the throttle valve 355, which can also enable the throttle valve 355 to be tuned with sufficient precision to flow through the foreline 350. The size, number, and / or arrangement of the apertures 384 can be selected to be large enough to maintain proper fluid conductance while still providing the insert 380 with sufficient surface area to function as a collection point for residue from the process gas. For example, the apertures 384 can have a diameter of between or about 3 mm and 25 mm, between or about 6 mm and 20 mm, between or about 9 mm and 18 mm, between or about 12 mm and 15 mm, or other ranges to provide sufficient conductance while providing sufficient surface area to function as a residue trap.

[0040] While illustrated as having circular apertures, it should be understood that other aperture shapes, such as rectangular, triangular, star-shaped, oval, and / or other closed shapes, are possible. In some embodiments, the cross-sectional area of each aperture 384 can be less than or about 500 mm 2 , less than or about 450 mm 2 , less than or about 400 mm 2 , less than or about 350 mm 2 , less than or about 300 mm 2 , less than or about 250 mm 2 , less than or about 200 mm 2 , less than or about 150 mm 2 , less than or about 100 mm 2 , less than or about 50 mm 2 , less than or about 25 mm 2or smaller. Moreover, the apertures 384 can be arranged in a uniform or non-uniform manner around the surface of the insert. For example, the apertures 384 can be arranged in a repeating pattern (such as in rows and / or columns) across all or a portion of the surface of the insert 380, while in other embodiments a non-regular arrangement of one or more apertures 384 can be utilized. As shown, the apertures 384 are arranged in multiple rows, with the apertures 384 in adjacent rows being offset from one another. For example, the centers of the apertures 384 in adjacent rows are not aligned with one another along the longitudinal axis of the insert 380. In some embodiments, some or all of the rows of apertures 384 can be aligned along the longitudinal axis. In some embodiments, one or more of the sidewalls (or portions thereof) can be devoid of apertures 384. For example, one or more surfaces of the insert 380 that are farthest from the outlet 370 can be devoid of apertures 384, which can provide a greater surface area upon which residue can be captured, while surfaces closest to the outlet 370 can include apertures 384 to assist in maintaining sufficient conductance through the foreline 350, the foreline trap 360, and the throttle valve 355.

[0041] In some embodiments, the insert 380 can include a substantially solid base 386. For example, as shown, a solid base 386 is provided below the sidewall. The base 386 can be completely solid and / or can otherwise provide a solid foundation for securing the insert 380 within the foreline trap 360. For example, the base 386 and / or the foreline trap 360 can include one or more coupling mechanisms that enable the insert 380 to be removably secured in place within the foreline trap 360. As just one example, the trap portion 375 can include a flange 377, such as at a lower end of the trap portion 375. In some embodiments, the insert 380 can include a flange 382, such as a KF flange, which can be formed as part of the insert 380 and / or coupled with the insert 380. As shown, the flange 382 is a separate component that can be removably secured to the base 386 of the insert 380. For example, the flange 382 can include threaded connectors or other securing elements that can engage with corresponding connectors of the base 386 to couple the flange 382 to the base 386 of the insert 380. This enables the insert 380 to be decoupled from the flange 382 for cleaning, repair, or replacement, while enabling the flange 382 to be reused. To secure the insert 380 within the trap portion 375, the two flanges 377, 382 can be coupled with one another. For example, a collar 395 can be provided that receives and secures the flanges 377, 382 to one another to secure the insert 380 within the trap portion 375. In some embodiments, an O-ring, gasket, or other sealing element 397 can be provided within the collar 395 to help seal the interface between the flange 377 of the foreline trap 360 and the flange 382 of the insert 380. The sealing element 397 can help prevent leakage of process gas out of the collar 395. The collar 395 can be a clamp ring to enable the collar 395 to be released from the flanges 377, 382, which can allow the insert 380 to be easily accessed and removed from the trap for cleaning or replacement. For example, the collar 395 can include a fastening mechanism, such as a threaded fastener mechanism and / or a quick disconnect mechanism.

[0042] In some embodiments, to further enhance the ability of the insert 380 to collect residue from the process gas, the insert 380 can be actively cooled. For example, the insert 380 can be coupled with a cooling block 385, which is coupled with a cooling source. In some embodiments, the base of the insert 380 and / or the bottom end of the flange 382 can include a protrusion 394 that protrudes beyond the collar 395 and is coupled with the cooling block 385. The protrusion 394 can be removably coupled with the cooling block 385, such as by using fasteners or other coupling mechanisms. The cooling block 385 can be coupled with a cooling fluid source 390, such as a process chilled water source, which can supply a circulating fluid to the cooling block 385 via one or more fluid lines 392. In this manner, the cooling block 385 can establish a heat transfer path that can reduce the temperature of the insert 380 relative to the foreline trap 360 and the gas flowing therethrough. For example, the process gas flowing through the foreline 350, the foreline trap 360, and / or the throttle valve 355 can often exceed 140°C or more. The cooling fluid, which can be water, glycol, and / or other coolant, can be provided at a temperature of less than or about 100°C, less than or about 90°C, less than or about 80°C, less than or about 70°C, less than or about 60°C, less than or about 50°C, less than or about 40°C, less than or about 30°C, less than or about 25°C, less than or about 20°C, less than or about 15°C, less than or about 10°C, less than or about 5°C, less than or about 0°C, or less. Such a coolant temperature can result in a temperature of the insert 380 of less than or about 80°C, less than or about 70°C, less than or about 60°C, less than or about 50°C, less than or about 40°C, less than or about 30°C, less than or about 25°C, less than or about 20°C, less than or about 15°C, less than or about 10°C, less than or about 5°C, less than or about 0°C, or less. These temperatures are significantly lower than the temperature of the process gas, the foreline 350, the foreline trap 360, and / or the throttle valve 355, and thus help to facilitate residue collection on the insert 380. The insert 380 can be formed of a thermally conductive material, such as aluminum, to enable the insert 380 to be more effectively cooled by the cooling block to further facilitate residue deposition. It will be appreciated that the insert 380 can be cooled in a non-uniform manner. For example, portions of the insert 380 closer to the base 386 can be cooled to a greater extent than the upper portions of the insert 380. Further, the size and distribution of the apertures 384 can affect the cooling characteristics of the insert 380.

[0043] The lower temperature of the insert 380 can result in the accumulation of residue from the process gas on the insert 380 rather than on the warmer walls of the pre-pump trap 360 and / or within the throttle valve 355. By reducing the deposition of residue within the throttle valve 355, the amount of drift of the throttle valve can be reduced. This can improve the performance of the throttle valve 355 and make it easier to consistently control the fluid conductance through the pre-pump 350 and throttle valve 355. Additionally, the reduction in residue deposited within the throttle valve 355 can reduce the frequency of high temperature purge gas cleaning of the throttle valve 355, which can help protect chamber components, such as heaters, from the effects of such purge gas flows.

[0044] The insert 380 can be designed not only to maintain sufficient fluid conductance, but also to facilitate better cooling, which in turn enhances the ability of the insert 380 to capture or otherwise collect residue from the process gas before the gas reaches the throttle valve 355. For example, if the thickness and / or cross-sectional area of the side walls and / or body of the insert 380 is too great, too much of the open interior of the pre-pump trap 360 will be filled, resulting in a reduction in the conductance of the pre-pump trap 360 and throttle valve 355 and a change in the pressure within the pre-pump trap 360 and throttle valve 355 from the desired operating conditions. The thickness of the side walls can be less than or about 0.50 inches, less than or about 0.40 inches, less than or about 0.35 inches, less than or about 0.30 inches, less than or about 0.25 inches, less than or about 0.20 inches, less than or about 0.15 inches, less than or about 0.10 inches, less than or about 0.05 inches, or less. In some embodiments, the thickness of the side walls of the insert 380 can vary along the length of the insert 380. For example, the thickness of the side walls can be greater near the base 386 and decrease in a linear or non-linear manner in a direction opposite the base 386. The cross-sectional area of the insert 380 can be less than or about 1.6 square inches, less than or about 1.5 square inches, less than or about 1.4 square inches, less than or about 1.3 square inches, less than or about 1.2 square inches, less than or about 1.1 square inches, less than or about 1.0 square inches, less than or about 0.9 square inches, less than or about 0.8 square inches, less than or about 0.7 square inches, less than or about 0.6 square inches, less than or about 0.5 square inches, less than or about 0.45 square inches, less than or about 0.40 square inches, less than or about 0.35 square inches, less than or about 0.30 square inches, less than or about 0.25 square inches, or less. In some embodiments, the cross-sectional area of the insert 380 can vary along the length of the insert 380. For example, the cross-sectional area can be greater near the base 386 and decrease in a linear or non-linear manner in a direction opposite the base 386.

[0045] Figure 4A schematic isometric view of an exemplary insert 400 according to some embodiments of the present technology is shown. The insert 400 can be included in any of the chambers or systems previously described, as well as any other chamber or system that can benefit from an insert. For example, the insert 400 can be disposed within the trap portion 375 of the foreline trap 360 described above with respect to Figure 3 and Figure 3A The insert 400 can be similar to the insert 380 and can include any of the features described with respect to the insert 380. For example, the insert 400 can include a solid base 405. The base 405 can include coupling mechanisms that enable the insert 400 to be coupled with a cooling block, such as the cooling block 385, and / or a flange, such as the flange 382, which can be used to secure the insert 400 within a foreline trap, such as the foreline trap 360. For example, the base 405 can define threaded sockets 410 that can receive threaded male connectors of a flange and / or cooling block. In some embodiments, the base 405 can include male threaded connectors that engage with corresponding female connectors of a flange and / or cooling block, rather than defining threaded sockets. It will be further understood that some embodiments can use non-threaded coupling mechanisms to secure the insert 400 to a flange and / or cooling block. In some embodiments, the base 405 can be formed to include a flange, such that the base of the flange includes the coupling mechanisms for coupling the insert 400 with a cooling block. A circular sidewall 415 extends from the base 405 and defines an open interior 420. The sidewall 415 can further define a plurality of apertures 425. As shown, the apertures 425 are arranged in a plurality of rows and columns, with the apertures 425 in each row aligned with the apertures 425 in an adjacent row along a longitudinal axis of the insert 400. As described above, the size, arrangement, and / or number of the apertures 425 can be selected to maintain proper fluidic conductance, while the insert 400 still has sufficient surface area to serve as a collection point for residue from a process gas.

[0046] Figure 5 A schematic isometric view of an exemplary insert 500 according to some embodiments of the present technology is shown. The insert 500 can be included in any of the chambers or systems previously described, as well as any other chamber or system that can benefit from an insert. For example, the insert 500 can be disposed in the foreline trap 360 described above with respect to Figure 3 and Figure 3AThe insert 500 can include a body 505 that serves as a collection point for residue from the process gas passing through the frontstage pipe trap. As shown, the body 505 of the insert 500 has a cross-shaped cross-section, including a plurality of wings 510 that provide a large surface area on which to collect residue. Each wing 510 can have a thickness selected to achieve sufficient conductance through the frontstage pipe trap and the throttle valve. For example, each wing 510 can have a thickness of less than or about 0.50 inches, less than or about 0.40 inches, less than or about 0.30 inches, less than or about 0.25 inches, less than or about 0.20 inches, less than or about 0.15 inches, less than or about 0.10 inches, less than or about 0.05 inches, or less. In some embodiments, the thickness of the wings 510 of the insert 500 can vary along the length of the insert 500. For example, the thickness of the wings 510 can be greater near the bottom of the insert 500 and decrease in a linear or non-linear manner toward the top of the insert 500. While shown with a cross-shaped cross-section, it should be understood that the insert can have any other cross-sectional shape.

[0047] The insert 500 can also include a base or stem 515 that supports the insert 500 at a desired location within the frontstage pipe trap. For example, the stem 515 can sit on and / or be coupled to the top of the base and / or flange (such as the flange 382) of the frontstage pipe trap. For example, the distal end of the stem 515 can be threaded such that the distal end can be inserted within a threaded receptacle of the flange. The flange can be coupled to the frontstage pipe trap in a manner similar to that described above with respect to the flange 382. For example, the flange of the frontstage pipe trap and the flange of the insert 500 can be secured to one another via a collar and / or other securing mechanism. While illustrated as a single shaft, the base or stem 515 can have any shape. For example, the insert 500 can include a base that extends radially outward along all or a portion of the width of the wings 510. In some embodiments, the base of the insert 500 can have a similar structure to the base 405 described above. Figure 3 and 3A The insert 500 can also include a base or stem 515 that supports the insert 500 at a desired location within the frontstage pipe trap. For example, the stem 515 can sit on and / or be coupled to the top of the base and / or flange (such as the flange 382) of the frontstage pipe trap. For example, the distal end of the stem 515 can be threaded such that the distal end can be inserted within a threaded receptacle of the flange. The flange can be coupled to the frontstage pipe trap in a manner similar to that described above with respect to the flange 382. For example, the flange of the frontstage pipe trap and the flange of the insert 500 can be secured to one another via a collar and / or other securing mechanism. While illustrated as a single shaft, the base or stem 515 can have any shape. For example, the insert 500 can include a base that extends radially outward along all or a portion of the width of the wings 510. In some embodiments, the base of the insert 500 can have a similar structure to the base 405 described above. Figure 4

[0048] In some embodiments, the body 505 of the insert 500 can define a plurality of apertures. For example, some or all of the wings 510 can define one or more apertures that can increase the fluidic conductance of the insert 500. In some embodiments, each of the apertures can extend through a single wing 510, while in other embodiments, one or more apertures can extend through portions of multiple wings 510.

[0049] Figure 6 ​The operations of an example method 600 of semiconductor processing, in accordance with some embodiments of the present technology, are illustrated. The method can be performed in various processing chambers, including the plasma system 200 and / or the system 300 described above, which can include a foreline trap and / or a plug-in according to embodiments of the present technology, such as the foreline trap 360 and / or the plug-ins 380, 400, and / or 500. The method 600 can include a number of optional operations, which can or can not be specifically associated with some embodiments of the method according to the present technology.

[0050] The method 600 can include a processing method that can include operations for forming a hardmask film or other deposition operations. The method can include optional operations before the method 600 begins, or the method can include additional operations. For example, the method 600 can include operations performed in a different order than illustrated. In some embodiments, the method 600 can include flowing one or more precursors or other process gases into a processing chamber at operation 605. For example, a precursor can be flowed into a chamber, such as a chamber included in the plasma system 200 or the system 300, and the precursor can be flowed through one or more of a gas box, a baffle, or a faceplate before delivering the precursor into a processing region of the chamber.

[0051] At operation 610, a plasma of the precursor can be generated within the processing region, such as by providing RF power to the faceplate to generate a plasma. At operation 615, material formed in the plasma can be deposited on a substrate. At operation 620, the precursor can be exhausted from the processing chamber. For example, the precursor can be flowed through at least one foreline, a foreline trap, and a throttle valve to remove the precursor from the processing chamber. The foreline trap can include a plug-in, such as the plug-ins 380, 400, or 500, which can serve as a collection point for residue from the precursor other process gases, which can prevent or reduce deposition of residue within the throttle valve. This can help maintain proper conductance through the throttle valve and reduce the amount of throttle valve drift, which in turn can reduce the frequency of cleaning operations.

[0052] In some embodiments, to further facilitate collection of residue on the plug-in, the plug-in can be actively cooled as the precursor or other process gas is exhausted. For example, a cooling fluid, such as water or glycol, can be circulated or otherwise flowed through a cooling block coupled with the plug-in. The cooling fluid can reduce the temperature of the plug-in to enhance residue collection.

[0053] The insert can be removed from the foreline trap for purposes of cleaning or maintenance. For example, when a threshold amount of residue has collected on the insert, the insert can be removed for cleaning and / or replaced with a clean insert, which can better collect residue than a dirty insert. In some embodiments, to remove the insert, the collar coupling the flange of the foreline trap and the insert can be removed. Similarly, the insert and / or the flange of the insert can be decoupled from the cooling block to release the insert. A new and / or clean insert can be coupled with the cooling block and reinserted into the foreline trap. In this way, the insert can be cleaned and / or replaced without the need to clean the foreline and / or the throttle valve using high-temperature purge gas that can damage chamber components.

[0054] In the preceding description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments can be practiced without some or all of these details.

[0055] Having disclosed several embodiments, those skilled in the art will appreciate that many modifications, substitutions, and alterations to the present technology can be made without departing from the spirit and scope of the embodiments. Moreover, for the avoidance of doubt, no limitation of the scope of the present technology is intended by the description of the exemplary embodiments. Consequently, the description is not to be construed as a limitation of the scope of the present technology.

[0056] Where a range of values is provided, it is understood that each intervening value, to the minimum resolution of the measurement, between the upper and lower limit of that range is also specifically disclosed. Each smaller range between any stated value or intervening value in a stated range and any other stated or intervening value in that stated range is encompassed. The upper and lower limits of these smaller ranges can independently be included or excluded in the range, and the endpoints are included in the range unless specifically excluded. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0057] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural reference unless the context clearly dictates otherwise. Thus, for example, reference to "a pore" includes a plurality of such pores, reference to "the plate" includes reference to one or more plates known to one of skill in the art, and equivalents thereof, and so forth.

[0058] Further, as used in the specification and the appended claims, the terms "comprise," "comprising," "contain," "containing," "include," and "including" are intended to be open-ended terms that do not preclude the presence of one or more other features, integers, components, operations, acts, or groups that are not expressly recited.

Claims

1. A semiconductor processing system, comprising: a process chamber defining a process region; a foreline coupled with the process chamber, the foreline defining a fluid conduit; a foreline trap having an inlet coupled with a distal end of the foreline; a removable insert provided within an interior of the foreline trap, the removable insert comprising a solid base, wherein a distal end of the solid base is removably coupled to a flange, the flange comprising a protrusion; a cooling fluid source; a cooling block removably coupled to the protrusion of the flange; a fluid line coupling the cooling fluid source with the cooling block, wherein the cooling fluid source is configured to circulate a cooling fluid to the cooling block via the fluid line, and wherein physical contact between the cooling block and the protrusion of the flange creates a heat transfer path that reduces a temperature of the removable insert as the cooling fluid is circulated to the cooling block; and a throttle valve coupled with an outlet of the foreline trap downstream of the removable insert.

2. The semiconductor processing system of claim 1, wherein: the removable insert is characterized by one or more sidewalls defining an open interior; and at least one of the one or more sidewalls defines a plurality of apertures extending through a thickness of the at least one sidewall.

3. The semiconductor processing system of claim 2, wherein: each of the plurality of apertures has a diameter between 3 mm and 25 mm.

4. The semiconductor processing system of claim 2, wherein: each of the plurality of apertures has a circular shape.

5. The semiconductor processing system of claim 2, wherein: each of the plurality of apertures has a same diameter.

6. The semiconductor processing system of claim 2, wherein: the solid base is coupled with the one or more sidewalls.

7. The semiconductor processing system of claim 2, wherein: each of the one or more sidewalls has a thickness less than or equal to 0.5 inches.

8. The semiconductor processing system of claim 1, further comprising: an additional foreline coupled with the process chamber, wherein: the foreline trap comprises: a first inlet fluidly coupled with the foreline; a second inlet fluidly coupled with the additional foreline; and an outlet fluidly coupled with the throttle valve; and the removable insert is disposed downstream of the first inlet and the second inlet and upstream of the outlet.

9. The semiconductor processing system of claim 1, further comprising: a collar removably coupling the removable insert with the foreline trap.

10. A method of processing a semiconductor substrate with the semiconductor processing system of any of claims 1-9, comprising the steps of: flowing a precursor into a process chamber; ​ generating a plasma of the precursor within a processing region of the processing chamber; depositing material on a substrate disposed within the processing region; and venting the precursor from the processing chamber via at least one foreline, a foreline trap, and a throttle valve, wherein a removable insert is disposed within the foreline trap.

11. The method of claim 10, further comprising: actively cooling the removable insert while venting the precursor.

12. The method of claim 11, wherein: the step of actively cooling the removable insert comprises the step of circulating a cooling fluid through a cooling block, the cooling block being coupled to the removable insert.

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