Substrate processing apparatus and multi-component thin film formation method using same

Abstract

The present invention relates to a substrate processing apparatus and a multi-component thin film deposition method using same. The substrate processing apparatus according to an embodiment of the present invention comprises a plurality of process regions divided by a plurality of separation regions. At least two of the plurality of process regions are controlled to selectively spray two different process gases. Accordingly, thin films produced through a unit cycle circulating once through the plurality of process regions are formed to include atoms constituting the two different process gases, respectively, thereby forming a multi-component thin film.

Description

Substrate processing apparatus and method for forming a multi-component thin film using the same

[0001] The present invention relates to a substrate processing apparatus and a method for forming a thin film using the same, and more specifically, to a substrate processing apparatus having a plurality of process regions for forming a plurality of multi-component thin films and a method for forming a multi-component thin film using the same.

[0002] Generally, as the integration density of semiconductor integrated circuit devices increases, it is required that thin films be deposited with a uniform thickness on non-flat surfaces having a high aspect ratio. The non-flat surfaces may include, for example, patterns having a high aspect ratio. Currently, the performance of semiconductor integrated circuit devices may depend on forming thin films with a uniform thickness on the patterns having a high aspect ratio without the occurrence of overhang.

[0003] Meanwhile, to improve the productivity of semiconductor integrated circuit devices, a substrate processing device is proposed that separates a single chamber space into multiple process areas and allows multiple different processes to proceed.

[0004] However, in substrate processing devices having multiple process zones, the number of wafers that can be processed within the chamber space is limited, and the gas provided is also limited, so there were difficulties in depositing multi-component thin films on non-flat surfaces with high aspect ratios.

[0005] Embodiments of the present invention provide a substrate processing apparatus capable of depositing a multi-component thin film on a non-flat surface.

[0006] In addition, embodiments of the present invention provide a method for forming multilayer multi-component thin films using the substrate processing apparatus.

[0007] A substrate processing apparatus according to one aspect of the present invention may include a process chamber, a substrate support, a gas injection structure, and a control unit. The process chamber may include a plurality of process areas. The substrate support may be located inside the process chamber. The substrate support may include a plurality of substrate support modules spaced apart at a certain interval so that one substrate may be located per the plurality of process areas. The plurality of substrate support modules may be configured to be rotatable so as to pass through the plurality of process areas sequentially. The gas injection structure is positioned on the upper part of the process chamber so as to face the substrate support. The gas injection structure may include a plurality of shower heads, each provided one per the plurality of process areas, which inject different process gases toward the facing substrate support modules, and a plurality of process gas supply blocks connected to each of the plurality of shower heads. At least two of the plurality of process gas supply blocks may include at least two different process gas sources.

[0008] The control unit controls the gas injection structure so that, during a first unit cycle that circulates the plurality of process zones once, the at least two process gas supply blocks can each provide a first process gas and a third process gas, which are different from each other, to the shower heads corresponding to the at least two process gas supply blocks. Additionally, during a second unit cycle that further circulates the plurality of process zones after the first unit cycle, the control unit can each provide a second process gas and a fourth process gas, which are different from the first and third process gases, to the shower heads corresponding to the at least two process gas supply blocks.

[0009] The above plurality of process regions may include, for example, first to fourth process regions.

[0010] The gas injection structure comprises: first to fourth shower heads disposed in each of the first to fourth process zones; a first gas supply block configured to supply a first inhibitor gas to the first shower head during both the first unit cycle and the second unit cycle; a second gas supply block configured to supply a first process gas to the second shower head during the first unit cycle and a second process gas different from the first process gas to the second shower head during the second unit cycle, according to the control of the control unit; and a third gas supply block configured to supply a third process gas different from the first and second process gases to the third shower head during the first unit cycle and a fourth process gas different from the first to third process gases to the third shower head during the second unit cycle, according to the control of the control unit. and includes a fourth gas supply block configured to provide a first reaction gas that reacts with the first process gas and the third process gas to the fourth shower head during the first unit cycle, and to provide a second reaction gas that reacts with the second process gas and the fourth process gas to the fourth shower head during the second unit cycle, according to the control of the control unit.

[0011] The gas injection structure may further include a first separation gas injection unit located between the first process area and the second process area; a second separation gas injection unit located between the second process area and the third process area; a third separation gas injection unit located between the third process area and the fourth process area; and a fourth separation gas injection unit located between the fourth process area and the first process area. The first to fourth separation gas injection units may be configured to extend toward the outer edge of the gas injection structure with respect to the center of the gas injection structure. The gas injection structure may further include a separation gas supply block connected to each of the first to fourth separation gas injection units and receiving a separation gas for separation and purging between adjacent process areas.

[0012] The control unit is configured to control the substrate support so as to stop the rotation of the substrate support for a set time when the plurality of substrate support modules each face the plurality of shower heads.

[0013]

[0014] A method for forming a plurality of multi-component thin films in a substrate processing apparatus comprising first to fourth process regions, each separated by first to fourth separation regions where a purge gas is provided according to another embodiment of the present invention, is as follows.

[0015] A first substrate, a fourth substrate, a third substrate, and a second substrate are respectively positioned in each of the first process area, the second process area, the third process area, and the fourth process area. A first multi-component thin film is formed in the order of the first to fourth substrates by a first unit cycle that sequentially cycles through the first process area, the first separation area, the second process area, the second separation area, the third process area, the third separation area, the fourth process area, and the fourth separation area in the order of the first to fourth substrates. Next, a second multi-component thin film different from the first multi-component thin film is formed by a second unit cycle that sequentially cycles through the first process region, the first separation region, the second process region, the second separation region, the third process region, the third separation region, the fourth process region, and the fourth separation region, in the order of the first substrate to the fourth substrate on which the first multi-component thin film is formed. The first multi-component thin film comprises at least two metal atoms, and the second multi-component thin film comprises at least two metal atoms different from the at least two metal atoms of the first multi-component thin film.

[0016] According to the present invention, a substrate processing apparatus according to the embodiments comprises a plurality of process regions partitioned by a plurality of separation regions. At least two of the plurality of process regions are configured to selectively inject different plurality of process gases. Accordingly, a first multi-component thin film generated through a first unit cycle that primarily circulates the plurality of process regions is formed to include atoms constituting at least two different process gases. Accordingly, a multi-component thin film can be formed using a space-time partitioning apparatus.

[0017] In addition, when a second unit cycle is performed after forming the first unit cycle, other process gases not selected in the first unit cycle are selectively injected into at least two process regions. Accordingly, the second multi-component thin film produced through the second unit cycle is formed to contain atoms different from those of the first multi-component thin film.

[0018] In addition, since the inhibitor gas is injected during the initial deposition stage and adsorbed first in the areas where deposition is easy, the process gas and reaction gas are adsorbed slowly in the areas where deposition is easy and adsorbed actively in the areas where deposition is difficult. Accordingly, the overhang phenomenon, in which the thin film is deposited intensively only in the areas where deposition is easy, can be reduced, allowing for the deposition of a multi-component thin film with a uniform thickness on a surface with a high aspect ratio.

[0019] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to embodiments of the present invention.

[0020] FIG. 2 is a bottom view showing a shower head and a separating gas injection unit provided in the lead of the substrate processing device illustrated in FIG. 1.

[0021] FIG. 3 is an enlarged perspective view of a substrate support of a substrate processing device illustrated in FIG. 1.

[0022] FIG. 4a is a flowchart for explaining a method for forming a first multi-component thin film according to one embodiment of the present invention.

[0023] FIG. 4b is a flowchart for forming a second multi-component thin film according to one embodiment of the present invention.

[0024] FIG. 5 is a timing diagram for explaining a method of forming first and second multi-component thin films on a plurality of substrates according to one embodiment of the present invention.

[0025] FIGS. 6a to 6d are cross-sectional views of a semiconductor device for explaining a method of forming a first multi-component thin film according to an embodiment of the present invention.

[0026] FIGS. 7a to 7d are cross-sectional views of a semiconductor device for explaining a method of forming a second multi-component thin film on top of a first multi-component thin film according to an embodiment of the present invention.

[0027] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity of description. Throughout the specification, the same reference numerals refer to the same components.

[0028] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to embodiments of the present invention, FIG. 2 is a bottom view showing a shower head and a separation gas injection unit provided in the lead of the substrate processing apparatus shown in FIG. 1, and FIG. 3 is an enlarged perspective view showing a substrate support of the substrate processing apparatus shown in FIG. 1. For reference, FIG. 1 may correspond to the structure corresponding to the cross-section along line I-I' in FIG. 2 and the cross-sectional structure along line II-II' in FIG. 3.

[0029] Referring to FIGS. 1 to 3, the substrate processing apparatus (100) may be, for example, a space-time divided atomic layer deposition apparatus having a processing space divided into a plurality of process regions.

[0030] The substrate processing device (10) of the present embodiment may include a process chamber (100), a gas injection structure (200), a substrate support (300), a heater (450), an exhaust unit (500), and a controller (600).

[0031] First, the process chamber (100) may include a chamber wall (110a) and a lid (120). The lid (120) may be located at the upper edge of the chamber wall (110a). A gas injection structure (200) is inserted and fixed between the lids (120) so that a processing space (110) is defined within the process chamber (100).

[0032] The process chamber (100) may include a sealing member (not shown) interposed between the chamber wall (110a) and the lid (120). The sealing member may include an O-ring, but is not limited thereto.

[0033] The processing space (110) of the present embodiment may be divided into, for example, first to fourth process areas (A1, A2, A3, A4), but is not limited thereto. An individual substrate processing process may be performed in each of the first to fourth process areas (A1, A2, A3, A4). In order for an independent substrate processing process to be performed in each process area (A1, A2, A3, A4), a separation area in which a separation gas is injected may be formed between the process areas (A1, A2, A3, A4).

[0034] The above gas injection structure (200) may include first to fourth shower heads (210, 220, 230, 240) for providing process gases to each of the first to fourth process areas (A1, A2, A3, A4).

[0035]

[0036] As an exemplary embodiment, the first shower head (210), the second shower head (220), the third shower head (230), and the fourth shower head (240) may be spaced apart at a 90° interval. The first shower head (210), the second shower head (220), the third shower head (230), and the fourth shower head (240) may be arranged sequentially along the circumferential direction.

[0037] The first process area (A1) may be an area located below the first shower head (210).

[0038] For example, assuming that the substrate (S) undergoes processing in the order of a first process area (A1), a second process area (A2), a third process area (A3), and a fourth process area (A4), a first shower head (210) located in the first process area (A1) may be connected to a first gas supply block (250a). The first gas supply block (250a) may include, for example, an inhibitor gas supply unit. In some cases, the first gas supply block (250a) may include an inhibitor gas source and a purge gas source. Accordingly, the first shower head (210) may spray the inhibitor gas or purge gas into the first process area (A1). Here, the inhibitor gas may be a deposition inhibiting gas having the property of inhibiting the adsorption of subsequent process gases.

[0039] The second process area (A2) may be an area located below the second shower head (220). The second shower head (220) may be connected, for example, to a second gas supply block (250b). The second gas supply block (250b) may include a first process gas source and a second process gas source. In some cases, the second gas supply block (250b) may include a first process gas source, a second process gas source, and a purge gas source. Accordingly, the second shower head (220) may selectively spray the first process gas, the second process gas, or the purge gas into the second process area (A2).

[0040] The third process area (A3) may be an area located below the third shower head (230). The third shower head (230) may be connected to a third gas supply block (250c). The third gas supply block (250c) may include a third process gas source and a fourth process gas source. In some cases, the third supply block (250c) may include a third process gas source, a fourth process gas source, and a purge gas source. Accordingly, the third shower head (230) may spray the third process gas, the fourth process gas, or the purge gas into the third process area (A3).

[0041] The fourth process area (A4) may be an area located below the fourth shower head (240). The fourth shower head (240) may be connected to a fourth gas supply block (250d). The fourth gas supply block (250d) may include a first reaction gas source and a second reaction gas source. In some cases, the fourth gas supply block (250d) may include a first reaction gas source, a second reaction gas source, and a purge gas source. Accordingly, the fourth shower head (240) may spray the first reaction gas, the second reaction gas, or the purge gas into the fourth process area (A4).

[0042] The above gas injection structure (200) may further include a separation gas injection unit (260). The separation gas injection unit (260) may be positioned between adjacent shower heads (210, 220, 230, 240). The separation gas injection unit (260) may be positioned between adjacent process zones (A1, A2, A3, A4) to prevent mixing of process gases and unexpected reactions between process gases and reaction gases. The separation gas may include, for example, argon (Ar) gas, nitrogen (N2) gas, and purge gas. Accordingly, the substrate may undergo a purge process as it passes through the separation gas injection unit (600).

[0043] As an exemplary embodiment, the separation gas injection unit (600) may include a first separation gas injection unit (260a), a second separation gas injection unit (260b), a third separation gas injection unit (260c), a fourth separation gas injection unit (260d), and a curtain gas injection unit (260e).

[0044] The first separation gas injection unit (260a) may be positioned between the first shower head (210) and the second shower head (220). The first separation gas injection unit (260a) may inject the separation gas, i.e., purge gas, into the first separation area (B1) between the first process area (A1) and the second process area (A2). The separation gas injected from the first separation gas injection unit (260a) may prevent the mixing of the inhibitor gas and the first process gas, or the mixing of the inhibitor gas and the second process gas. Additionally, the separation gas, i.e., the purge gas, injected from the first separation gas injection unit (260a) may remove the inhibitor gas material that is not adsorbed on the resulting substrate.

[0045] The second separation gas injection unit (260b) may be positioned between the second shower head (220) and the third shower head (230). The second separation gas injection unit (260b) can inject the separation gas into a second separation area (B2) between the second process area (A2) and the third process area (A3) to prevent mixing of the first process gas and the third process gas or mixing of the second process gas and the fourth process gas. Additionally, the first process gas material and the second process gas material that are not adsorbed on the resulting substrate can be removed by the separation gas injected from the second separation gas injection unit (260b), i.e., the purge gas.

[0046] The third separation gas injection unit (260c) may be positioned between the third shower head (230) and the fourth shower head (240). The separation gas injection unit (260c) can inject the separation gas into the third separation area (B3) between the third process area (A3) and the fourth process area (A3) to prevent mixing of the third process gas with the first reaction gas and mixing of the fourth process gas with the second reaction gas. Additionally, the third process gas material and the fourth process gas material that are not adsorbed on the resulting substrate can be removed by the separation gas injected from the third separation gas injection unit (260c), i.e., the purge gas.

[0047] The fourth separation gas injection unit (260d) may be positioned between the fourth shower head (240) and the first shower head (210). By injecting the separation gas into the fourth separation area (B4) between the fourth process area (A4) and the first process area (A1), mixing between the first reaction gas and the inhibitor gas, and mixing between the second reaction gas and the inhibitor gas, can be prevented. Additionally, the reaction gas material that has not reacted with at least one of the first to fourth process gases adsorbed on the resulting substrate can be removed by the separation gas injected from the fourth separation gas injection unit (260d), i.e., the purge gas.

[0048] These first to fourth separated gas injection sections (260a, 260b, 260c, 260d) can be extended in directions, for example, 0°, 90°, 180°, and 270° relative to the center of the gas injection structure (200).

[0049] The curtain gas injection unit (260e) may be located at the center where the first to fourth separation gas injection units (260a, 260b, 260c, 260d) are connected to each other. The curtain gas injection unit (260e) can inject curtain gas into the central part between the first to fourth process areas (A1, A2, A3, A4) to prevent mixing of gases injected into process areas (A1, A2, A3, A4) located diagonally. The curtain gas may include, for example, the inert gas.

[0050] As an exemplary embodiment, FIG. 2 shows an example in which a separation gas supply block (270) is connected to the first to fourth gas supply blocks (250a, 250b, 250c, 250e), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e), respectively, to supply separation gas and perform purging along with separation.

[0051] However, not limited thereto, the first to fourth gas supply blocks (250a, 250b, 250c, 250e) each have a separate purge gas source as described above, and the first to fourth gas supply blocks (250a, 250b, 250c, 250e) may be provided independently of the separated gas supply block (270).

[0052] Additionally, the substrate processing device (10) of the present embodiment may further include a separate curtain gas supply block (not shown) connected to the curtain gas injection unit (260e).

[0053] The substrate support (300) may be placed inside the processing space (110) of the process chamber (100). For example, the substrate support (300) may be placed in the lower region of the processing space (110). The substrate support (300) may support a plurality of substrates loaded into the process chamber (100).

[0054] The substrate support (300) may include a susceptor (310), a rotation shaft (320), and a plurality of substrate support modules (400). The susceptor (310) may have a roughly disc shape, but is not limited thereto. The rotation shaft (320) is connected to the center of the lower surface of the susceptor (310) to rotate the susceptor (310). That is, the substrate support (300), specifically the susceptor (310), may be rotated around the rotation shaft (320). The rotation shaft (320) may be rotated, for example, in a clockwise direction.

[0055] The plurality of substrate support modules (400) may be mounted in pockets of the substrate support (300) and configured to be individually rotatable. As an exemplary embodiment, the substrate support modules (400) may be positioned on the upper part of the substrate support (300) so as to face each of the shower heads (210, 220, 230, 240) during the process. For example, the substrate support modules (400) may be provided in a number corresponding to the shower heads (210, 220, 230, 240).

[0056] As an exemplary embodiment, the processing space (110) includes first to fourth process areas (A1, A2, A3, A4), and when first to fourth shower heads (210, 220, 230, 240) are placed in the first to fourth process areas (A1, A2, A3, A4), first to fourth substrate support modules (400-1, 400-2, 400-3, 400-4) may be provided on the susceptor (310) to face the first to fourth shower heads (210, 220, 230, 240). The first to fourth substrate support modules (400-1, 400-2, 400-3, 400-4) have their own rotational function and can rotate independently when process gas is sprayed from the corresponding shower head. In FIGS. 1 and 3, B5 may represent a curtain gas spray area.

[0057] The heater unit (450) may be located inside the processing space (110) of the process chamber (100). The heater unit (450) may include a hollow (H1) into which the rotating shaft (320) is inserted, and may be located below the susceptor (310) to heat the susceptor (310) to a predetermined temperature.

[0058] The exhaust section (500) may include an exhaust line (530), a valve (V), and a vacuum pump (140). The exhaust line (530) may connect the vacuum pump (540) to the processing space (110) inside the process chamber (100). The vacuum pump (140) provides vacuum to the processing space (110) to control the vacuum level of the processing space (110) and to discharge process gases and reaction byproducts from the processing space (110). The valve (V) is located in the exhaust line (530) and may be a throttle valve that controls the vacuum level of the processing space (110) according to the opening rate.

[0059] The above exhaust unit (500) may be provided with at least one in the process chamber (110), and in some cases, a remote plasma device may be further provided.

[0060] The control unit (600) can control the operation of the gas injection structure (200) and the substrate support (300) to form a plurality of multi-component thin films on the substrates (S1-S4). The control unit (260) can control each configuration of the substrate processing device (10) to implement a spatiotemporal division method in which a spatial division method and a time division method are fused, using the ALD method.

[0061] As an example, the control unit (600) can control the first to fourth process gas supply blocks (250a, 250b, 250c, 250d) to control the types of process gas and reaction gas provided through the first to fourth shower heads (210, 220, 230, 240).

[0062] Additionally, the control unit (600) can control the rotation angle (e.g., rotation and stop operation) of the substrate support (300), i.e., the susceptor (310), to determine the position and process gas injection time so that the first to fourth substrates (S1, S2, S3, S4) and the first to fourth shower heads (210, 220, 230, 240) face each other. Furthermore, the purge process time can be controlled by adjusting the rotation speed of the substrate support (300). More specifically, in order to implement a spatiotemporal division method, the control unit (600) can stop the substrate support (300) when an inhibitor gas, process gases, or reaction gas is injected onto the first to fourth substrates (S1, S2, S3, S4). Meanwhile, the control unit (600) can rotate the substrate support (300) when changing the type of gas sprayed onto the first to fourth substrates (S1, S2, S3, S4) or when performing a purge process.

[0063] Hereinafter, a method for forming a plurality of multi-component thin films using the substrate processing apparatus illustrated in FIGS. 1 to 3 will be described.

[0064] FIG. 4a is a flowchart for explaining a method for forming a first multi-component thin film according to an embodiment of the present invention. FIG. 4b is a flowchart for forming a second multi-component thin film according to an embodiment of the present invention. FIG. 5 is a timing diagram for explaining a method for forming first and second multi-component thin films on a plurality of substrates according to an embodiment of the present invention. FIG. 6a to 6d are cross-sectional views of a semiconductor device for explaining a method for forming a first multi-component thin film according to an embodiment of the present invention. FIG. 7a to 7d are cross-sectional views of a semiconductor device for explaining a method for forming a second multi-component thin film on top of a first multi-component thin film according to an embodiment of the present invention.

[0065] In the following, the initial substrate processing device (10) is set up as follows before depositing the first and second multi-component thin films. A first substrate support module (400-1) on which a first substrate (S1) is placed is positioned to face the first shower head (210) of the first process area (A1). A fourth substrate support module (400-4) on which a fourth substrate (S4) is placed is positioned to face the second shower head (220) of the second process area (A2). A third substrate support module (400-3) on which a third substrate (S3) is placed is positioned to face the third shower head (230) of the third process area (A3). A second substrate support module (400-2) on which a second substrate (S2) is placed is positioned to face the fourth shower head (240) of the fourth process area (A4).

[0066] In the following, the deposition method of multiple multi-component dielectric thin films will be described based on the first substrate (S1), and it will be understood that the same process is carried out sequentially on the second to fourth substrates (S2, S3, S4) after the process of the first substrate (S1).

[0067] Referring to FIGS. 4a, 5, and FIGS. 6a to 6d, the control unit (600) controls the first to fourth gas supply blocks (250a, 250b, 250c, 250d), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e) to inject inhibitor gas onto the first substrate (S1) through the first shower head (210) (ST10). At this time, since no process is being carried out in the second to fourth shower heads (220, 230, 240), purge gas is injected so that inhibitor gas components and other impurity components are not introduced onto the second to fourth substrates (S2, S3, S4) (ⓟ). In addition, the first to fourth separation gas injection sections (260a, 260b, 260c, 260d) and the curtain gas injection section (260e) may each inject a separation gas and a curtain gas substantially identical to the purge gas, such as an inert gas.

[0068] In addition, in this embodiment, the first to fourth substrates (S1, S2, S3, S4) may each be a result in which the same high-density semiconductor circuit patterns are integrated. For example, as shown in FIG. 6a, each of the first to fourth substrates (S1, S2, S3, S4) may each include a semiconductor substrate layer (1000), at least one interlayer insulating film (1110) including a storage node contact portion (1120), and a storage electrode (1130) in contact with the storage node contact portion (1120). Furthermore, in order to secure a high capacity for the semiconductor device formed on the first to fourth substrates (S1, S2, S3, S4), the storage electrode (1130) may have a cylinder structure having a certain height, for example. Accordingly, the surface of the result of the first to fourth substrates (S1, S2, S3, S4) may have a high aspect ratio.

[0069] As an exemplary embodiment, when the inhibitor gas is sprayed onto the first substrate (S1) through the first shower head (210), the inhibitor atoms (710) constituting the inhibitor gas can be mainly adsorbed on the upper surface of the storage electrode (1130) and the upper surface of the interlayer insulating film (1120), where deposition is easier, rather than inside the cylinder of the storage electrode (1130).

[0070] After that, by driving the control unit (600), purge gas is sprayed onto the first substrate (S1) to perform a first purge step (ST20) that removes the result of the first substrate (S1) and the inhibitor gas components that were not adsorbed. For example, the first purge step (ST20) may be performed by spraying purge gas from the first shower head (210).

[0071] The substrate support (300) is rotated a first time by a predetermined angle, for example, 90° (ST30). By the first rotation (ST30) of the substrate support (300), the first substrate (S1) is moved to the second process area (A2), the fourth substrate (S4) is moved to the third process area (A3), the third substrate (S3) is moved to the fourth process area (A4), and the second substrate (S2) is moved to the first process area (A1).

[0072] At this time, during the first rotation step (ST30), the first to fourth substrates (S1, S2, S3, S4) are configured to pass through any one of the first to fourth separation gas injection sections (260a, 260b, 260c, 260d), so the first purge step (ST20) can proceed simultaneously with the first rotation step (ST30). However, it is not limited thereto, and the first purge step (ST20) can be performed by purge gas injected from the first shower head (210).

[0073] Afterward, the control unit (600) controls the first to fourth gas supply blocks (250a, 250b, 250c, 250d), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e) so that the second shower head (220) injects the first process gas among the first and second process gases onto the first substrate (S1) that has arrived at the second process area (A2) (ST40). The first process gas, for example, may be one selected from a Zr-containing precursor, an Hf-containing precursor, and a Ta-containing precursor as the main process gas.

[0074] Then, the first process gas is decomposed into the form of first metal atoms (720) within the second process region (A2), and the first metal atoms (720) are adsorbed onto the resulting product of the first substrate (S1). At this time, the adsorption of the first metal atoms (720) proceeds more actively in the part where the inhibitor atoms (710) are not adsorbed and deposition is not easy, such as inside the cylinder of the storage electrode (1130), rather than in the part where the inhibitor atoms (710) are adsorbed and deposition is not easy. Therefore, the first metal atoms (720) are ultimately evenly adsorbed onto the surface of the resulting product of the first substrate (S1) having a high aspect ratio.

[0075] When the first process gas is sprayed onto the first substrate (S1), the first shower head (210) can spray the inhibitor gas onto the second substrate (S2) located in the first process area (A1) (ST10). In addition, purge gas can still be supplied to the fourth substrate (S4) and the third substrate (S3) located in the third and fourth process areas (A3, A4) through the third and fourth shower heads (230, 240) (ⓟ).

[0076] Next, a second purging step (ST50) is performed to remove the first process gas component that is not adsorbed on the resulting surface of the first substrate (S1). For example, the second purging step (ST50) of the first substrate (S1) and the first purging step (ST20) of the second substrate (S2) can be performed simultaneously with a second rotation step (ST60) that rotates the substrate support (300) by 90°. That is, since the first substrate (S1) and the second substrate (S2) pass through the second and first separation gas injection sections (260b, 260a) by the rotation of the substrate support (300), the purging steps (ST50, ST20) can be performed by the purging gas injected from the second and first separation gas injection sections (260b, 260a).

[0077] In some cases, the second purge step (ST50) of the first substrate (S1) may be performed by purge gas sprayed from the second shower head (220) and by the first purge step (ST20) of the second substrate (S2). While the processes of the first and second substrates (S1, S2) are being carried out in the second and first process areas (A2, A1), the fourth and third substrates (S4, S3) located in the third and fourth process areas (A3, A4) may be continuously supplied with purge gas.

[0078] Through the second rotation step (ST60) of the substrate support (300), the first substrate (S1) can be moved to the third process area (A3), the second substrate (S2) can be moved to the second process area (A2), the third substrate (S3) can be moved to the first process area (A1), and the fourth substrate (S4) can be moved to the fourth process area (A4).

[0079] Next, the control unit (600) controls the first to fourth gas supply blocks (250a, 250b, 250c, 250d), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e), so that the third shower head (230) of the third process area (A3) where the first substrate (S1) is located injects the third process gas among the third and fourth process gases onto the first substrate (S1) (ST70).

[0080] The third process gas may be a precursor containing a metal different from the first process gas component. For example, the third process gas may be injected at a smaller flow rate than the first process gas to control the characteristics of the multi-component thin film. As an exemplary embodiment, the third process gas may be one selected from an Al-containing precursor, a Y-containing precursor, and a Ti-containing precursor. The third metal atoms (730) decomposed in the third process region (A3) are adsorbed onto the resulting product of the first substrate (S1). Although in small quantities, the third metal atoms (730) are adsorbed more onto the first metal atoms (720) than onto the inhibitor atoms (710).

[0081] While the third process gas is being injected into the first substrate (S1), the second substrate (S2) receives the first process gas through the second shower head (220) according to the same process scheme as the first substrate (S1) (ST40), and the third substrate (S3) can also receive inhibitor gas through the first shower head (210) according to the process scheme of the first and second substrates (S1, S2) (ST10). Additionally, purge gas can be provided toward the fourth substrate (S4) so ​​that no process occurs in the fourth process area (A4) (ⓟ).

[0082] Next, a third purging step (ST80) is performed to remove the result of the first substrate (S1) and the unreacted third process gas component that was not adsorbed. At the same time, a second purging step (ST50) is performed on the second substrate (S2) to remove the unreacted first process gas component, and a first purging step (ST20) is performed on the third substrate (S3) to remove the unreacted inhibitor gas component. The third purging step (ST80) of the first substrate (S1), the second purging step (ST50) of the second substrate (S2), and the first purging step (ST20) of the third substrate (S3) may be performed simultaneously with a third step (ST90) of rotating the substrate support (300) by 90°. That is, the first substrate (S1), the second substrate (S2), and the third substrate (S3) are traversed by the third, second, and first separation gas injection sections (260c, 260b, 260a) by the third rotation step (ST90) of the substrate support (300), and the purging process is performed by the purging gas, which is the separation gas injected from the third, second, and first separation gas injection sections (260c, 260b, 260a). However, not limited thereto, the third purging step (ST80) of the first substrate (S1) may be carried out by purging gas sprayed from the third shower head (230), the second purging step (ST50) of the second substrate (S2) may be carried out by purging gas sprayed from the second shower head (220), and the first purging step (ST20) of the third substrate (S3) may be carried out by purging gas sprayed from the first shower head (210).

[0083] By the third rotation (ST90) of the substrate support (300), the first substrate (S1) is moved to the fourth process area (A4), the second substrate (S2) is moved to the third process area (A3), the third substrate (S3) is moved to the second process area (A2), and the fourth substrate (S4) is moved to the first process area (A1).

[0084] The control unit (600) controls the first to fourth gas supply blocks (250a, 250b, 250c, 250d), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e) so that the fourth shower head (240) injects the first reaction gas among the first and second reaction gases onto the first substrate (S1) (ST100). For example, the first reaction gas may include O2 or an O3 precursor, and the second reaction gas may include H2O.

[0085] The first reaction gas sprayed onto the first substrate (S1) is decomposed into oxygen atoms (not shown) within the fourth process area (A4) and oxidized with the first and third metal atoms (720, 730).

[0086] When the first reaction gas is sprayed onto the first substrate (S1), the third shower head (230) sprays the third process gas onto the second substrate (S2) (ST70), the second shower head (220) sprays the first process gas onto the third substrate (S3) (ST40), and the first shower head (210) sprays the inhibitor gas onto the fourth substrate (S4) (ST10).

[0087] After that, a fourth purging step (ST110) is performed on the first substrate (S1) to remove the product of the first substrate (S1) and the unreacted first reaction gas component, and a third purging step (ST80) is performed on the second substrate (S2) to remove the product of the second substrate (S2) and the unreacted third process gas component. At the same time, a second purging step (ST50) is performed on the third substrate (S3) to remove its product and the unreacted first process gas component, and a first purging step (ST20) can be performed on the fourth substrate (3) to remove its product and the unreacted inhibitor gas component. The fourth purging step (ST110) of the first substrate (S1), the third step (ST80) of the second substrate, the third purging step (ST50) of the third substrate (S3), and the first purging step (ST20) of the fourth substrate (S3) can be performed simultaneously with the fourth step (ST120) of rotating the substrate support (300) by 90°. That is, the first substrate (S1), the second substrate (S2), the third substrate (S3), and the fourth substrate (S4) are traversed by the fourth, third, second, and first separation gas injection sections (260d, 260c, 260b, 260a) by the fourth rotation (ST120) of the substrate support (300), and the purging process is performed by the purge gas, which is the separation gas injected from the fourth, third, second, and first separation gas injection sections (260c, 260b, 260a).However, not limited thereto, the fourth purging step (ST120) of the first substrate (S1) may be carried out by purging gas sprayed from the fourth shower head (240), the third purging step (ST80) of the second substrate (S2) may be carried out by purging gas sprayed from the third shower head (230), the third purging step (ST50) of the third substrate (S3) may be carried out by purging gas sprayed from the second shower head (220), and the first purging step (ST20) of the fourth substrate (S4) may be carried out by purging gas sprayed from the first shower head (210).

[0088] Accordingly, the first substrate (S1) completes one unit cycle (UC1), and a first multi-component dielectric thin film (DE1) comprising a first metal atom, a third metal atom, and oxygen is formed on the surface of the storage electrode (1130) of the first substrate (S1). As an example, the first multi-component dielectric thin film (DE1) may be one selected from ZrAlO and HfYO.

[0089] Then, with reference to FIGS. 4b, FIGS. 5, and FIGS. 7a to 7d, by the fourth rotation (ST120) of the substrate support (300), the first substrate (S1) on which the first multi-component dielectric thin film (DE1) is formed is moved again to the first process area (A1), the second substrate (S2) is moved to the fourth process area (A4), the third substrate (S3) is moved to the third process area (A3), and the fourth substrate (S1) is moved to the second process area (A2).

[0090] Then, driven by the control unit (600), the first shower head (210) of the first process area (A1) sprays inhibitor gas onto the first substrate (S1) on which the first multi-component dielectric thin film (DE1) is formed (ST130). As with the ST10 step, the inhibitor atoms (810) of the inhibitor gas are mainly adsorbed on the first multi-component dielectric thin film (DE1) located on the upper part of the cylinder of the storage electrode (1130), for example, on the first multi-component dielectric thin film (DE1) and on the interlayer insulating film (1110) on both sides of the storage electrode (1130). At the same time, in the fourth process area (A4), the fourth shower head (240) can spray a first reaction gas onto the second substrate (S2) (ST100), in the third process area (A3), the third shower head (230) can spray a third process gas onto the third substrate (S3) (ST70), and in the second process area (A2), the second shower head (220) can spray a first process gas onto the fourth substrate (S4) (ST40).

[0091] Afterwards, a fifth purge (ST140) is performed on the first substrate (S1) to remove the first multi-component dielectric thin film (DE1) and unadsorbed inhibitor gas components. A fourth purge (ST110) is performed on the second substrate (S2) to remove unreacted first reaction gas, and a third purge (ST80) is performed on the third substrate (S3) to remove the first metal atom and the surface of the storage electrode (1130) and unadsorbed third process gas components. A second purge (ST50) is performed on the fourth substrate (S4) to remove unadsorbed first process gas components.

[0092] The purging steps (S1: ST140, S4: ST110, S3: ST80, S2: ST50) of the first to fourth substrates (S1, S2, S3, S4) may be performed simultaneously with the fifth rotation step (ST150) of the substrate support (300). However, depending on the case, they may be performed by purging gas sprayed from the first to fourth shower heads (210, 220, 230, 240). The second substrate (S2), having completed the fourth purging process, has the first unit cycle (UC1) completed, and a first multi-component dielectric thin film (DE1) is formed on the surface of the storage electrode (1130) of the second substrate (52).

[0093] By the fifth rotation (ST150) of the substrate support (300), the first substrate (S1) is moved to the second process area (A2), the second substrate (S2) is moved back to the first process area (A1), the third substrate (S3) is moved to the fourth process area (A4), and the fourth substrate (S4) is moved to the third process area (A3).

[0094] Afterward, the control unit (600) controls the first to fourth gas supply blocks (250a, 250b, 250c, 250d), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e), so that the second shower head (220) injects the second process gas among the first and second process gases onto the first substrate (S1) on which the first multi-component dielectric thin film (DE1) is formed (ST160). The second process gas is a main process gas different from the first process gas and may be one selected from a Zr-containing precursor, an Hf-containing precursor, and a Ta-containing precursor.

[0095] Then, the second process gas is decomposed into the form of second metal atoms (820) within the second process region (A2), and the second metal atoms (820) are adsorbed onto the upper surface of the first multi-component dielectric thin film (DE1) of the first substrate (S1). At this time, the adsorption of the second metal atoms (820) proceeds relatively more actively in the part where the inhibitor atoms (810) are not adsorbed and deposition is not easy, such as inside the cylinder of the storage electrode (1130), than in the part where the inhibitor atoms (810) are adsorbed and deposition is not easy. Therefore, the second metal atoms (820) are ultimately evenly adsorbed onto the surface of the first multi-component dielectric thin film (DE1) of the first substrate (S1) having a high aspect ratio.

[0096] When a second process gas is sprayed onto the first substrate (S1) by the second shower head (220), the first shower head (210) can spray the inhibitor gas onto the second substrate (S2) located in the first process area (A1) (ST110). Additionally, the fourth shower head (240) sprays the first reaction gas onto the third substrate (S3) located in the fourth process area (A4) (ST100), and the third shower head (230) sprays the third process gas onto the fourth substrate (S4) located in the third process area (A3) (ST70).

[0097] Next, a sixth purging step (ST170) is performed to remove the second process gas component that is not adsorbed on the surface of the first substrate (S1). At the same time, a fifth purging step (ST140) is performed on the second substrate (S2) to remove the inhibitor gas component that is not adsorbed on the second substrate (S2), a fourth purging step (ST110) is performed on the third substrate (S3) to remove the unreacted first reaction gas component of the third substrate (S3), and a third purging step (ST80) is performed on the fourth substrate (S4) to remove the unreacted third process gas of the fourth substrate (S4).

[0098] For example, the sixth purging step (ST170) of the first substrate (S1), the fifth purging step (ST140) of the second substrate (S2), the fourth purging step (ST110) of the third substrate (S3), and the third purging step (ST80) of the fourth substrate (S4) can be performed simultaneously with the sixth rotation step (ST180) which additionally rotates the substrate support (300) by 90°. As described above, the first to fourth substrates (S1, S2, S3, S4) pass through the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the purging steps (ST170, ST140, ST110, ST80) can be performed by the purging gas injected from the first to fourth separation gas injection units (260a, 260b, 260c, 260d). At this time, the third substrate (S3) can perform the fourth purging step (ST110), thereby allowing the first multi-component dielectric thin film (DE1) to be deposited on the third substrate (S3).

[0099] Through the sixth rotation step (ST180) of the substrate support (300), the first substrate (S1) can be moved to the third process area (A3), the second substrate (S2) can be moved to the second process area (A2), the third substrate (S3) can be moved to the first process area (A1), and the fourth substrate (S4) can be moved to the fourth process area (A4).

[0100] Next, the control unit (600) controls the first to fourth gas supply blocks (250a, 250b, 250c, 250d), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e), so that the third shower head (230) of the third process area (A3) where the first substrate (S1) is located injects the fourth process gas among the third and fourth process gases onto the first substrate (S1) (ST190).

[0101] The fourth process gas may be a precursor containing a metal different from the second process gas component and the third process gas component. For example, the fourth process gas may be injected at a smaller flow rate than the second process gas to control the characteristics of the multi-component thin film. As an exemplary embodiment, the fourth process gas may be one selected from an Al-containing precursor, a Y-containing precursor, and a Ti-containing precursor. The fourth metal atoms (830) decomposed in the third process region (A3) are adsorbed onto the resulting product of the second substrate (S2). Although in small quantities, the fourth metal atoms (830) are adsorbed more onto the second metal atoms (820) than onto the inhibitor atoms (810).

[0102] While the fourth process gas is sprayed onto the first substrate (S1), the second substrate (S2) is supplied with the second process gas through the second shower head (220) (ST160), and the third substrate (S3) can be supplied with an inhibitor gas through the first shower head (210) (ST130). Additionally, the fourth substrate (S4) of the fourth process area (A4) can be supplied with a first reaction gas through the fourth shower head (240) (ST100).

[0103] Next, a seventh purge step (ST200) is performed to remove the product of the first substrate (S1) and the unreacted fourth process gas component that was not adsorbed. At the same time, a sixth purge step (ST170) is performed on the second substrate (S2) to remove the unreacted second process gas component, a fifth purge step (ST140) is performed on the third substrate (S3) to remove the unreacted inhibitor gas component, and a fourth purge step (ST110) is performed on the fourth substrate (S4) to remove the unreacted first reaction gas component. The seventh purging step (ST200) of the first substrate (S1), the sixth purging step (ST170) of the second substrate (S2), the fifth purging step (ST140) of the third substrate (S3), and the fourth purging step (ST110) of the fourth substrate (S4) can be performed simultaneously with the seventh rotation step (ST210) of the substrate support (300) by 90°. However, this is not limited thereto, and it is understood that the purging process can be performed by purging gas sprayed by shower heads (210, 220, 230, 240). By performing the fourth purging step (ST110) on the fourth substrate (S4), a first multi-component dielectric thin film (DE1) can be deposited on the fourth substrate (S4).

[0104] By the seventh rotation (ST210) of the substrate support (300), the first substrate (S1) is moved to the fourth process area (A4), the second substrate (S2) is moved to the third process area (A3), the third substrate (S3) is moved to the second process area (A2), and the fourth substrate (S4) is moved to the first process area (A1).

[0105] Then, the control unit (600) controls the first to fourth gas supply blocks (250a, 250b, 250c, 250d), the first to fourth separation gas injection units (260a, 260b, 260c, 260d), and the curtain gas injection unit (260e), so that the fourth shower head (240) injects the second reaction gas among the first and second reaction gases onto the first substrate (S1) (ST220). For example, the second reaction gas may include H2O.

[0106] The second reaction gas sprayed onto the first substrate (S1) is decomposed into oxygen atoms (not shown) within the fourth process area (A4) and oxidized with the second and fourth metal atoms (820, 830).

[0107] When the second reaction gas is sprayed onto the first substrate (S1), the third shower head (230) sprays the fourth process gas onto the second substrate (S2) (ST190), the second shower head (220) sprays the second process gas onto the third substrate (S3) (ST160), and the first shower head (210) sprays the inhibitor gas onto the fourth substrate (S4) (ST130).

[0108] After that, the first substrate (S1) undergoes an 8th purge step (ST230) to remove the product of the first substrate (S1) and the unreacted second reaction gas component, and the second substrate (S2) undergoes a 7th purge step (ST200) to remove the product of the second substrate (S2) and the unreacted third process gas component. At the same time, the third substrate (S3) undergoes a 6th purge step (ST170) to remove its product and the unreacted second process gas component, and the fourth substrate (S4) undergoes a 5th purge step (ST140) to remove its product and the unreacted inhibitor gas component. The eighth purge step (ST230) of the first substrate (S1), the seventh step (ST200) of the second substrate (S2), the third purge step (ST170) of the third substrate (S3), and the first purge step (ST140) of the fourth substrate (S4) can be performed simultaneously with the ninth step (ST240) of rotating the substrate support (300) by 90°.

[0109] Accordingly, the first substrate (S1) completes the second unit cycle (UC2), and a second multi-component dielectric film (DE2) having a different component from the first multi-component dielectric film (DE1) is formed on the first multi-component dielectric film (DE1) of the first substrate (S1), thereby forming a capacitor dielectric film (DE). As an example, the second multi-component dielectric film (DE2) may be one selected from ZrAlO and HfYO.

[0110] As described above, by alternately performing the first and second unit cycles (UC1, UC2) at least once on the first to fourth substrates (S1, S2, S3, S4), a multi-component thin film having a uniform thickness on the surface can be deposited on the first to fourth substrates (S1, S2, S3, S4) having a high aspect ratio.

[0111] Although not shown in the drawing, the thin film deposition process can be completed in the order of the first substrate (S1), the second substrate (S2), the third substrate (S3), and the fourth substrate (S4). The substrates for which the thin film deposition process is completed may undergo a purging process (ⓟ) until the deposition process of the fourth substrate (S4) is completed.

[0112] As described in detail above, the substrate processing apparatus according to the embodiments includes a plurality of process regions partitioned by a plurality of separation regions. At least two of the plurality of process regions are configured to selectively inject different process gases. Accordingly, a first multi-component thin film generated through a first unit cycle that primarily circulates the plurality of process regions is formed to include atoms constituting at least two different process gases. Accordingly, a multi-component thin film can be formed using a space-time partitioning apparatus.

[0113] In addition, when a second unit cycle is performed after forming the first unit cycle, other process gases not selected in the first unit cycle are selectively injected into at least two process regions. Accordingly, the second multi-component thin film produced through the second unit cycle is formed to contain atoms different from those of the first multi-component thin film.

[0114] In addition, since the inhibitor gas is injected during the initial deposition stage and adsorbed first in the areas where deposition is easy, the process gas and reaction gas are adsorbed slowly in the areas where deposition is easy and adsorbed actively in the areas where deposition is difficult. Accordingly, the overhang phenomenon, in which the thin film is deposited intensively only in the areas where deposition is easy, can be reduced, allowing for the deposition of a multi-component thin film with a uniform thickness on a surface with a high aspect ratio.

[0115] Although the present embodiment illustrates an example in which a first unit cycle and a second unit cycle are performed alternately, it is not limited thereto, and a plurality of multi-component thin films with improved deposition uniformity can be deposited by depositing the first unit cycle (UC1) at least once and depositing the second unit cycle (UC2) at least once.

[0116] In addition, although this embodiment describes a multi-component dielectric film used as a capacitor dielectric film as an example, it is not limited thereto and can be applied to various types of thin films.

[0117] Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications can be made by those skilled in the art within the scope of the technical concept of the present invention.

[0118] A multi-component thin film can be formed using a spacetime splitting device.

Claims

1. A process chamber including multiple process zones; A substrate support located inside the process chamber and comprising a plurality of substrate support modules spaced apart at a certain interval so that one substrate can be located per the plurality of process areas, and configured to be rotatable so that the plurality of substrate support modules pass sequentially through the plurality of process areas; A gas injection structure comprising: a plurality of shower heads disposed on the upper part of the process chamber so as to face the substrate support, each shower head having one shower head per the plurality of process zones and each spraying different process gases toward the facing substrate support module; and a plurality of process gas supply blocks connected to each of the plurality of shower heads, wherein at least two of the plurality of process gas blocks are configured to include at least two different process gas sources; and A substrate processing apparatus comprising a control unit that controls the gas injection structure such that, during a first unit cycle circulating the plurality of process zones once, at least two of the plurality of process gas supply blocks provide a first process gas and a third process gas different from each other to the shower heads connected thereto, and during a second unit cycle circulating the plurality of process zones further after the first unit cycle, the at least two process gas supply blocks provide a second process gas and a fourth process gas different from the first and third process gases to the shower heads connected thereto.

2. In Paragraph 1, The plurality of process regions above include first to fourth process regions, and The above gas injection structure is, First to fourth shower heads disposed in each of the first to fourth process areas; A first gas supply block configured to supply inhibitor gas to the first shower head in both the first unit cycle and the second unit cycle according to the control of the control unit; A second gas supply block configured to supply a first process gas to the second shower head during the first unit cycle and to supply a second process gas different from the first process gas to the second shower head during the second unit cycle, according to the control of the control unit; A third gas supply block configured to provide a third process gas different from the first and second process gases to the third shower head during the first unit cycle and to provide a fourth process gas different from the first to third process gases to the third shower head during the second unit cycle, according to the control of the control unit; and A substrate processing apparatus comprising a fourth gas supply block configured to provide a first reaction gas that reacts with the first process gas and the third process gas to the fourth shower head during the first unit cycle, and to provide a second reaction gas that reacts with the second process gas and the fourth process gas to the fourth shower head during the second unit cycle, according to the control of the control unit.

3. In Paragraph 2, The above-mentioned first to fourth gas supply blocks further include a purge gas supply source, and the above-mentioned first to fourth shower heads spray purge gas onto each of the above-mentioned first to fourth substrates facing them, forming a substrate processing device.

4. In Paragraph 2, The above gas injection structure is, A first separation gas injection unit located between the first process area and the second process area; A second separation gas injection unit located between the second process area and the third process area; A third separation gas injection unit located between the third process area and the fourth process area; and A substrate processing apparatus further comprising a fourth separation gas injection unit located between the above-mentioned fourth process area and the above-mentioned first process area.

5. In Paragraph 4, The first to fourth separation gas injection sections are configured to extend toward the outer edge of the gas injection structure with respect to the center of the gas injection structure, and A substrate processing apparatus further comprising a separation gas supply block connected to each of the first to fourth separation gas injection sections, the above gas injection structure, for receiving separation gas for separation and purging between adjacent process regions.

6. In Paragraph 5, The above gas injection structure is, At the center where the first to fourth separation gas injection units meet, a curtain gas injection unit is further provided to prevent mixing of process gases between the process regions arranged diagonally, and The above curtain gas injection unit is connected to one selected from the above separation gas supply block and curtain gas supply block to receive curtain gas, and is a substrate processing device.

7. In Paragraph 2, The first to fourth process gases each comprise a metal precursor containing different metal atoms, and The above first and second reaction gases are substrate processing devices containing different types of oxygen-containing gases.

8. In Paragraph 7, The above first and second process gases are one selected from a Zr-containing precursor, an Hf-containing precursor, and a Ta-containing precursor, and The above third and fourth process gases are one selected from an Al-containing precursor, a Y-containing precursor, and a Ti-containing precursor, and A substrate processing apparatus in which the first reaction gas is O2 or O3 gas and the second reaction gas is H2O gas.

9. In Paragraph 4, A substrate processing device configured such that the control unit controls the substrate support to stop the rotation of the substrate support for a set time when the plurality of substrate support modules each face the plurality of shower heads.

10. In Paragraph 1, A substrate processing device in which each of the above plurality of substrate support modules is configured to rotate when the process gas is sprayed from the corresponding shower heads.

11. A method for forming a plurality of multi-component thin films on a plurality of substrates in a substrate processing apparatus comprising first to fourth process regions, each separated by first to fourth separation regions where a purge gas is provided, wherein A step of positioning a first substrate, a fourth substrate, a third substrate, and a second substrate, respectively, in each of the first process area, the second process area, the third process area, and the fourth process area; A step of forming a first multi-component thin film in the order of the first to fourth substrates by a first unit cycle that sequentially circulates the first process region, the first separation region, the second process region, the second separation region, the third process region, the third separation region, the fourth process region, and the fourth separation region in the order of the first to fourth substrates; and The method includes the step of forming a second multi-component thin film different from the first multi-component thin film by a second unit cycle that sequentially circulates the first process region, the first separation region, the second process region, the second separation region, the third process region, the third separation region, the fourth process region, and the fourth separation region in the order of the first substrate to the fourth substrate on which the first multi-component thin film is formed. A method for forming a multicomponent thin film, wherein the first multicomponent thin film comprises at least two metal atoms, and the second multicomponent thin film comprises at least two metal atoms different from the at least two metal atoms of the first multicomponent thin film.

12. In Paragraph 11, The step of forming the first multi-component thin film by the first unit cycle is: A step of injecting an inhibitor gas onto a selected substrate among the first to fourth substrates that have entered the first process area; A step of removing the inhibitor gas that is not adsorbed to the selected substrate using a separation gas sprayed into the first separation area while passing the selected substrate from the first process area to the second process area; A step of injecting a first process gas containing a first metal atom onto the selected substrate that has entered the second process region; A step of removing residual components of the first process gas that are not adsorbed to the selected substrate by using the separation gas sprayed into the second separation area while the selected substrate passes through the second separation area to move the selected substrate from the second process area to the third process area; A step of injecting a third process gas containing a third metal atom different from the first metal atom onto the selected substrate that has entered the third process region; A step of removing residual components of the third process gas that are not adsorbed to the selected substrate by using the separation gas sprayed into the third separation area while the selected substrate passes through the third separation area to move from the third process area to the fourth process area; A step of injecting a first reaction gas onto the selected substrate that has entered the fourth process area; and A method for forming a multi-component thin film, comprising the step of removing residual components of the first reaction gas that have not reacted with the first and third metal atoms adsorbed on the selected substrate by using the separation gas sprayed into the fourth separation region while passing the selected substrate from the fourth process region to the first process region.

13. In Paragraph 12, The step of forming the second multi-component thin film by the second unit cycle is: A step of injecting an inhibitor gas onto a selected substrate among the first to fourth substrates comprising the first multi-component thin film that has entered the first process region; A step of removing the inhibitor gas that is not adsorbed to the selected substrate using the separation gas sprayed into the first separation area while passing the selected substrate from the first process area to the second process area; A step of injecting a second process gas containing a second metal atom different from the first metal atom onto the selected substrate that has entered the second process region; A step of removing residual components of the second process gas that are not adsorbed on the product of the selected substrate by using the separation gas sprayed into the second separation area while the selected substrate passes through the second separation area to move from the second process area to the third process area; A step of injecting a fourth process gas containing a fourth metal atom different from the second metal atom onto the selected substrate that has entered the third process region; A step of removing residual components of the fourth process gas that are not adsorbed on the product of the selected substrate by using the separation gas sprayed into the third separation area while passing the selected substrate from the third process area to the fourth process area; A step of injecting a second reaction gas different from the first reaction gas onto the selected substrate that has entered the fourth process area; and A method for forming a multi-component thin film, comprising the step of removing residual components of the second reaction gas that did not react with the product of the selected substrate by using the removal gas sprayed into the fourth separation area while passing the selected substrate from the fourth process area to the first process area.

14. In Paragraph 11, A method for forming a multi-component thin film, characterized in that the step of forming the first multi-component thin film by the first unit cycle, or the step of forming the second multi-component thin film by the second unit cycle, is repeated at least once.

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