Air inlet structure, reaction device and semiconductor thin film deposition equipment

Abstract

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically, it relates to an air intake structure, a reaction device, and a semiconductor thin film deposition apparatus. Background Technology

[0002] In the CVD thin film deposition process, the precursor gas needs to be uniformly distributed by a spray plate before entering the reaction chamber for thin film deposition on the wafer surface. During the process of the precursor gas passing through the spray plate, the high temperature of the spray plate heats the precursor gas, allowing the precursor gas to reach the initial reaction temperature, thereby ensuring the thin film deposition rate and film uniformity through gas phase decomposition.

[0003] In related technologies, due to the uneven temperature distribution of the spray plate, the precursor gas obtained by the gas after being uniformly sprayed by the spray plate has different initial reaction temperatures at different locations. The temperature deviation of the precursor gas will disrupt the equilibrium state of gas phase decomposition, resulting in inconsistent deposition rates of the thin film in different regions of the wafer, which ultimately affects the uniformity of thin film deposition and reduces product quality. Summary of the Invention

[0004] One objective of this application is to provide a new technical solution for an air intake structure, a reaction device, and a semiconductor thin film deposition apparatus.

[0005] According to a first aspect of the embodiments of this application, an air intake structure is provided, comprising: Sprayer plate; A temperature regulating component is disposed opposite to the spray area of ​​the spray plate, and the temperature regulating component includes a heating layer, an isolation layer and a feedback layer; The heating layer is disposed on the side of the isolation layer close to the spray plate, and the feedback layer is disposed on the side of the isolation layer away from the spray plate. The heating layer includes multiple heating units arranged in an array, and the feedback layer includes multiple temperature measuring units arranged in an array. The multiple temperature measuring units are disposed corresponding to the multiple heating units. The control component, the heating layer and the feedback layer are both electrically connected to the control component.

[0006] Optionally, the heating layer includes a plurality of first heating lines and a plurality of second heating lines, wherein the plurality of first heating lines are connected to a plurality of heating units along a first direction, and the plurality of second heating lines are connected to a plurality of heating units along a second direction; The second direction intersects with the first direction.

[0007] Optionally, the control component includes a heating controller, and the plurality of first heating lines and the plurality of second heating lines are all independently connected to the heating controller.

[0008] Optionally, the feedback layer includes a plurality of first temperature measuring lines and a plurality of second temperature measuring lines, wherein the plurality of first temperature measuring lines are connected to a plurality of temperature measuring units along the first direction, and the plurality of second temperature measuring lines are connected to a plurality of temperature measuring units along the second direction.

[0009] Optionally, the control component includes a temperature controller, and the plurality of first temperature measuring lines and the plurality of second temperature measuring lines are all independently connected to the temperature controller.

[0010] Optionally, the temperature regulating component includes a heat-conducting layer and a protective layer, wherein the heat-conducting layer is attached to the side of the heating layer near the spray plate, and the protective layer is attached to the side of the feedback layer away from the spray plate.

[0011] Optionally, the heating unit is a heating resistor obtained by a first etching process, and the temperature measuring unit is a thermocouple obtained by a second etching process; The isolation layer is a silicon oxide layer, the thermally conductive layer is an aluminum nitride ceramic layer, and the protective layer is a silicon nitride layer.

[0012] Optionally, the spray plate is provided with a plurality of spray holes, and the plurality of heating units are provided corresponding to the plurality of spray holes.

[0013] Optionally, the spray plate is provided with a plurality of spray holes, and the plurality of heating units are staggered with the plurality of spray holes.

[0014] Optionally, it also includes a top plate, an air distribution plate, and an air inlet channel. The top plate is disposed between the spray plate and the temperature regulating component, and the temperature regulating component is attached to the side of the top plate away from the spray plate. The air distribution plate is disposed between the top plate and the spray plate and forms an air distribution gap with the top plate. The air intake channel passes through the temperature regulating component and the top plate, and the outlet of the air intake channel is connected to the air distribution gap.

[0015] According to a second aspect of the embodiments of this application, a reaction apparatus is provided, the reaction apparatus including the air intake structure described in the first aspect.

[0016] According to a third aspect of the embodiments of this application, a semiconductor thin film deposition apparatus is provided, the semiconductor thin film deposition apparatus including the air inlet structure described in the first aspect; or... Including the reaction apparatus described in the second aspect.

[0017] One technical advantage of this application is: This application discloses an air intake structure, which includes a spray plate, a temperature regulating component, and a control component. The temperature regulating component is disposed opposite to the spray area of ​​the spray plate and includes a heating layer, an isolation layer, and a feedback layer. The heating layer is disposed on the side of the isolation layer closer to the spray plate, and the feedback layer is disposed on the side of the isolation layer away from the spray plate. The heating layer includes multiple heating units arranged in an array, and the feedback layer includes multiple temperature measuring units arranged in an array, with the multiple temperature measuring units corresponding to the multiple heating units. Both the heating layer and the feedback layer are electrically connected to the control component. Each temperature measuring unit in this application embodiment can accurately detect the heating temperature of the corresponding heating unit, enabling the control component to more precisely control the heating power of the heating unit, thereby improving the uniformity of the temperature distribution of the spray plate, ensuring a consistent deposition rate of the thin film in different areas of the substrate surface, and improving the uniformity of thin film deposition.

[0018] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present application and, together with their description, serve to explain the principles of the present application.

[0020] Figure 1 A cross-sectional view of an air intake structure provided in one embodiment of this application; Figure 2 A schematic diagram of a temperature regulating component for an air intake structure provided in one embodiment of this application; Figure 3 A schematic diagram of a heating layer in a temperature regulating component of an air intake structure provided in one embodiment of this application; Figure 4 A schematic diagram of the feedback layer in a temperature regulation component of an intake structure provided in one embodiment of this application; Figure 5 A circuit control schematic diagram of a heating unit in a temperature regulation component of an intake structure provided in one embodiment of this application; Figure 6 This is a circuit control diagram of a temperature measuring unit in a temperature regulating component of an air intake structure, provided as an embodiment of this application.

[0021] in: 1. Spray plate; 11. Spray nozzles; 2. Temperature regulation component; 21. Heating layer; 211. Heating unit; 212. First heating circuit; 213. Second heating circuit; 22. Isolation layer; 23. Feedback layer; 231. Temperature measuring unit; 232. First temperature measuring circuit; 233. Second temperature measuring circuit; 24. Heat-conducting layer; 25. Protective layer; 3. Control components; 31. Heating controller; 32. Temperature controller; 4. Top plate; 5. Air distribution plate; 6. Air intake channel. Detailed Implementation

[0022] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0023] The embodiments of this application will now be described in detail, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0024] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0025] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0026] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0027] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0028] In related technologies, due to the uneven temperature distribution of the spray plate in the CVD (Chemical Vapor Deposition) thin film deposition process, the initial reaction temperature of the precursor gas obtained at different positions after being uniformly distributed by the spray plate is also different. The temperature deviation of the precursor gas will cause the deposition rate of the thin film to be inconsistent in different areas of the substrate surface such as the wafer, thus affecting the uniformity of the thin film deposition.

[0029] In this embodiment, each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, enabling the control component to more precisely control the heating power of the heating unit, thereby improving the uniformity of the temperature distribution of the spray plate, making the deposition rate of the film consistent in different areas of the substrate surface, and improving the uniformity of film deposition.

[0030] Reference Figure 1 This application provides an air intake structure, which includes: Sprayer plate 1; Temperature regulating component 2 is arranged opposite to the spray area of ​​spray plate 1. Temperature regulating component 2 includes heating layer 21, isolation layer 22 and feedback layer 23. The heating layer 21 is disposed on the side of the isolation layer 22 close to the spray plate 1, and the feedback layer 23 is disposed on the side of the isolation layer 22 away from the spray plate 1. The heating layer 21 includes multiple heating units 211 arranged in an array, and the feedback layer 23 includes multiple temperature measuring units 231 arranged in an array. The multiple temperature measuring units 231 are correspondingly arranged with the multiple heating units 211. The control component 3, heating layer 21 and feedback layer 23 are all electrically connected to the control component 3.

[0031] In the above embodiments, the precursor gas in the CVD thin film deposition process is first uniformly distributed by the spray plate 1, and then the precursor gas reaches the reaction chamber and deposits a thin film on the substrate surface. Therefore, the spray plate 1 enables the precursor gas to obtain the initial reaction temperature, which facilitates the gas-phase decomposition of the precursor gas and the deposition of the thin film.

[0032] See Figure 1 and Figure 2The temperature regulating component 2 can regulate the temperature of the spray plate 1. For example, the temperature regulating component 2 heats the corresponding area of ​​the spray plate 1 through the heating layer 21 near the spray plate 1, adjusting the overall temperature of the spray plate 1 to achieve a uniform temperature distribution. The feedback layer 23 is used to detect the heating temperature information of the heating layer 21 and feed the heating temperature information back to the control component 3, enabling the control component 3 to accurately adjust the heating power of the heating layer 21, achieving balanced temperature regulation of each area of ​​the spray plate 1 and realizing closed-loop temperature control of the spray plate 1. The isolation layer 22 can insulate the heating layer 21 and the feedback layer 23, preventing short circuits between the heating layer 21 and the feedback layer 23.

[0033] See Figure 3 and Figure 4 The heating layer 21 includes multiple arrayed heating units 211, which means that the heating layer 21 is divided into multiple independent heating units 211. The multiple independent heating units 211 can perform zoned heating on different areas of the spray plate 1. For example, the heating layer 21 can independently adjust the heating power of each heating unit 211 according to the actual temperature of each area of ​​the spray plate 1. The heating power of the heating unit 211 corresponding to the low temperature area of ​​the spray plate 1 can be larger, so as to achieve fine adjustment of the temperature of the spray plate 1 and improve the uniformity of the temperature distribution of the spray plate 1.

[0034] Similarly, the feedback layer 23 includes multiple temperature measuring units 231 arranged in an array. Each temperature measuring unit 231 corresponds to a heating unit 211. Each temperature measuring unit 231 can accurately detect the heating temperature of the corresponding heating unit 211, so that the control component 3 can more accurately control the heating power of the heating unit 211, thereby improving the uniformity of the temperature distribution of the spray plate 1, making the deposition rate of the film in different areas of the substrate surface consistent, and improving the uniformity of film deposition.

[0035] See Figure 3 and Figure 4 Both the heating layer 21 and the feedback layer 23 are electrically connected to the control component 3. The control component 3 receives the temperature information fed back by the temperature measuring unit 231 in the feedback layer 23, and sends control commands to the heating unit 211 in the heating layer 21 according to a preset program or algorithm. It dynamically adjusts the heating power of the heating unit 211 to achieve automatic adjustment and dynamic control of the temperature of the spray plate 1, so that the temperature distribution of the spray plate 1 is uniform, ensuring that the deposition rate of the film in different areas of the substrate surface is consistent, and improving the uniformity of film deposition and the quality of the substrate product.

[0036] In one embodiment, this application introduces a temperature regulating component 2 of a pixel array temperature control structure, consisting of heating units 211 (such as heating resistors, heating films, and heating ceramics) and temperature measuring units 231 (such as thermocouples and thermistors). This allows for uniform heating of the entire spray plate 1, improving the uniformity of the temperature distribution. Furthermore, by correspondingly arranging multiple temperature measuring units 231 with multiple heating units 211, the temperature of the heating area of ​​the spray plate 1 can be precisely controlled, increasing the flexibility of temperature adjustment. Additionally, the temperature regulating component 2 of the pixel array temperature control structure facilitates troubleshooting of heating faults in the reaction equipment and facilitates maintenance of the reaction equipment.

[0037] In some embodiments, see Figure 3 The heating layer 21 includes a plurality of first heating lines 212 and a plurality of second heating lines 213. The plurality of first heating lines 212 are connected to a plurality of heating units 211 along a first direction, and the plurality of second heating lines 213 are connected to a plurality of heating units 211 along a second direction. The second direction intersects with the first direction.

[0038] In the above embodiments, multiple first heating lines 212 connect multiple groups of heating units 211 along a first direction, forming an electrical connection channel between the heating units 211 in the first direction. For example, one first heating line 212 connects multiple heating units 211 in a group in series along the first direction, and the multiple first heating lines 212 can transmit electrical energy to the heating units 211 in each group, enabling the heating units 211 to generate heat. At the same time, multiple second heating lines 213 connect multiple groups of heating units 211 along a second direction, and the multiple second heating lines 213 form an electrical connection channel between the heating units 211 in the second direction. The cooperation between the multiple first heating lines 212 and the multiple second heating lines 213 achieves controllable heating of the heating units 211.

[0039] Furthermore, by controlling parameters such as the current of the first heating line 212 and the second heating line 213, the heating power of the heating unit 211 can be adjusted, thereby jointly performing flexible zoned temperature regulation of the spray plate 1.

[0040] In one embodiment, the second direction intersects the first direction, for example, the second direction is perpendicular to the first direction, so that the first heating line 212 and the second heating line 213 form a grid-like heating network on the surface of the spray plate, which can control the heating of the spray plate 1 from two different directions, improve the precision and uniformity of temperature regulation of the spray plate 1, thereby ensuring the consistency of the initial temperature of the precursor gas reaction, and improving the uniformity of thin film deposition and product quality.

[0041] In some embodiments, see Figure 3 and Figure 5The control unit 3 includes a heating controller 31, and multiple first heating lines 212 and multiple second heating lines 213 are independently connected to the heating controller 31.

[0042] In the above embodiment, each first heating line 212 is independently connected to the heating controller 31, meaning the heating controller 31 can control each first heating line 212 individually. Simultaneously, multiple second heating lines 213 are independently connected to the heating controller 31, allowing the heating controller 31 to control each second heating line 213 individually. For a single heating unit 211, the heating unit 211 will only be powered on and heated if both the first heating line 212 in the corresponding row and the second heating line 213 in the corresponding column connected to that heating unit 211 are conductive. See the specific control circuit for details. Figure 5 This allows for precise adjustment of the actual temperature of each area of ​​the spray plate 1.

[0043] In some embodiments, see Figure 4 The feedback layer 23 includes multiple first temperature measuring lines 232 and multiple second temperature measuring lines 233. The multiple first temperature measuring lines 232 are connected to multiple temperature measuring units 231 along a first direction, and the multiple second temperature measuring lines 233 are connected to multiple temperature measuring units 231 along a second direction.

[0044] In the above embodiment, multiple first temperature measuring lines 232 are connected to multiple temperature measuring units 231 along a first direction, which can summarize and transmit the temperature signals detected by each temperature measuring unit 231, so that the feedback layer 23 can collect temperature information at different locations in the first direction. The first temperature measuring lines 232 can also be used to analyze the temperature distribution of the spray plate 1 in the first direction, which helps to adjust the temperature deviation on the spray plate 1 in a timely manner.

[0045] Simultaneously, multiple second temperature measuring lines 233 connect to multiple temperature measuring units 231 along the second direction. These multiple second temperature measuring lines 233 form an electrical connection channel between the temperature measuring units 231 in the second direction, enabling the aggregation and transmission of temperature signals detected by each temperature measuring unit 231 in the second direction. Through the second temperature measuring lines 233, the temperature distribution of the spray plate 1 in the second direction can be analyzed, providing a more comprehensive understanding of the temperature distribution of the spray plate and ensuring the temperature uniformity of the spray plate 1.

[0046] In some embodiments, the control component 3 includes a temperature controller 32, and a plurality of first temperature measuring lines 232 and a plurality of second temperature measuring lines 233 are independently connected to the temperature controller 32.

[0047] In the above embodiment, each first temperature measuring line 232 is independently connected to the temperature controller 32, meaning the temperature controller 32 can individually receive and process the temperature signal transmitted by each first temperature measuring line 232. Simultaneously, multiple second temperature measuring lines 233 are independently connected to the temperature controller 32, enabling the temperature controller 32 to individually receive and process the temperature signals transmitted by each temperature measuring unit 231 in the second direction. Based on the temperature data fed back by the first and second temperature measuring lines 232, the temperature controller 32 can analyze the temperature conditions of different areas on the spray plate 1, improving the uniformity of the overall temperature distribution of the spray plate 1. For the specific control circuit, see [link to specific circuit description]. Figure 6 .

[0048] In practical applications, the number of rows and columns of the first heating line 212 and the second heating line 213 can be selected and designed according to actual needs and the level of circuit integration. In a specific embodiment, see... Figure 3 The number of rows and columns of the first heating line 212 and the second heating line 213 is set from 5×5 to 10×10. Each of the first heating line 212 and the second heating line 213 needs to be connected to the operating power supply and the power regulator through a high-temperature resistant MOSFET. The MOSFET can act as a switch for each of the first heating line 212 and the second heating line 213, thereby forming a row drive circuit and a column drive circuit. When both the row drive circuit and the column drive circuit of a heating unit are turned on, the power regulator ensures that the heating unit outputs appropriate heating power based on the difference between the actual temperature and the set temperature.

[0049] Specifically, Time Division Multiplexing (TDM) technology can be used to control heating units 211 located in different rows and columns. This involves utilizing the thermal inertia of the heating units 211, and through a scheduling algorithm, rapidly activating target heating units 211 in turn at an appropriate frequency. This achieves simultaneous heating of multiple heating units 211 on a macroscopic level, while preventing the activation of unnecessary heating units 211. The specific implementation method is as follows: S101, Based on the task requirements, confirm the positions of all heating units 211 that need to be heated in the array; S102, the row drive circuit of the first row that needs to work is activated; S103, when the row drive circuit is activated, the column drive circuit corresponding to the heating unit 211 that needs to work is turned on, thereby forming one or more paths. The power regulator performs negative feedback adjustment on the output power of the heating unit 211 according to the data of the temperature measuring unit 231. After the heating unit 211 has been working for a set time t, all drive circuits are turned off. S104, repeating S102 and S103 until a cycle is completed. The specific cycle length is determined by the frequency.

[0050] The scanning frequency range of the time division multiplexing technology can be adjusted according to the thermal inertia and quantity distribution of the heating units 211. For example, if the scanning frequency range is 100Hz-1kHz and there are fewer heating units 211 that need to work, the scanning frequency can be increased to avoid uneven heating; otherwise, the scanning frequency can be decreased to ensure the minimum power-on time.

[0051] Furthermore, the circuit structure of the temperature measuring unit 231 array is the same as that of the heating unit 211 array. In order to ensure that the temperature measuring unit 231 can accurately collect the temperature value of each single heating unit 211, each temperature measuring unit 231 needs to maintain an independent circuit path during operation. Therefore, the split-multiplexing technology used by this array during operation needs to perform rapid point-by-point scanning of all points at a high frequency (e.g., greater than or equal to 1kHz), thereby obtaining a more accurate real-time temperature. In practical use, multiple heating units 211 in the temperature regulation component 2 can be set to the same temperature to achieve a more uniform temperature distribution, or the temperatures of heating units 211 in different areas can be set differently in advance to compensate for temperature rise differences in the process and improve the uniformity and quality of the film. Furthermore, by monitoring the temperature changes in different areas during the process, the reaction kinetics can be inferred, providing guidance for process and hardware adjustments.

[0052] In some embodiments, see Figure 2 The temperature regulating component 2 includes a heat-conducting layer 24 and a protective layer 25. The heat-conducting layer 24 is attached to the side of the heating layer 21 near the spray plate 1, and the protective layer 25 is attached to the side of the feedback layer 23 away from the spray plate 1.

[0053] In the above embodiment, the heat-conducting layer 24 is attached to the side of the heating layer 21 near the spray plate 1, which can efficiently and quickly conduct the heat generated by the heating layer 21 to the spray plate 1, ensuring that the heat of the heating layer 21 can fully act on the spray plate 1. On the one hand, it can improve the heat transfer efficiency, reduce the heat loss in the transfer process, and make the spray plate 1 reach the set temperature faster and shorten the heating time. On the other hand, it helps to make the various parts of the spray plate 1 heat evenly, avoid local overheating or overcooling, and thus improve the temperature distribution uniformity of the spray plate 1.

[0054] See Figure 2The protective layer 25 is attached to the side of the feedback layer 23 away from the spray plate 1, and can protect the feedback layer 23 and other components inside the entire temperature control component 2. The protective layer 25 can prevent dust, impurities, chemicals and mechanical collisions from affecting and damaging the temperature control component 2, ensuring the stable operation of the entire temperature control system, so that the temperature of the spray plate 1 can always be within a controllable range, and improving the stability of the thin film deposition process and product quality.

[0055] In some embodiments, the heating unit 211 is a heating resistor obtained by a first etching process, and the temperature measuring unit 231 is a thermocouple obtained by a second etching process. The isolation layer 22 is a silicon oxide layer, the thermally conductive layer 24 is an aluminum nitride ceramic layer, and the protective layer 25 is a silicon nitride layer.

[0056] In the above embodiment, the heating units 211 of the heating layer 21 can be formed by first sputtering a 100nm thick TaN (tantalum nitride) material layer according to the array distribution requirements, and then by photolithography and reactive ion etching to form individual heating pixel structures of heating units 211. Finally, copper electroplating is used to form the first heating line and the second heating line of the circuit network structure. For precise control, each first heating line and the second heating line needs to be individually led from the edge of the temperature regulating component to the heating controller, which can be equipped with a heating drive circuit.

[0057] Specifically, the isolation layer 22 can be deposited with a micron-sized silicon oxide layer using plasma-enhanced chemical vapor deposition (PECVD) to separate the heating layer array and the feedback layer array. The temperature sensing units 231 of the feedback layer 23 can be deposited directly above the heating layer array using sputtering deposition and photolithography. These units are made of K-type nickel-chromium / nickel-silicon material and form a temperature sensing unit array via a first and second temperature sensing circuit. The circuit structure of the temperature sensing unit array 231 is identical to that of the heating unit array 211. Figure 5 and Figure 6 As shown.

[0058] See Figure 2 The bottom thermally conductive layer 24 is an aluminum nitride ceramic layer with good thermal conductivity and insulation, serving as the substrate for the temperature regulating component. The thermally conductive layer 24 can transfer heat downwards and ensure heat transfer safety. The protective layer 25 is a silicon nitride layer deposited by plasma-enhanced chemical vapor deposition (PECVD) process, used to protect the circuit structure of the temperature regulating component and isolate it from water vapor contamination.

[0059] In some embodiments, the spray plate 1 is provided with a plurality of spray holes 11, and a plurality of heating units 211 are provided corresponding to the plurality of spray holes 11.

[0060] In the above embodiments, by providing multiple spray holes 11, the precursor gas can be sprayed onto the wafer surface in a uniform manner, avoiding the problem of excessive or insufficient local gas flow, thereby improving the uniformity of thin film deposition on the wafer surface. Multiple heating units 211 are correspondingly arranged with multiple spray holes 11, enabling each heating unit 211 to effectively heat the area of ​​its corresponding spray hole 11. This ensures that the gas can quickly reach a suitable reaction temperature after being sprayed, reducing abnormal precursor gas reactions caused by insufficient or uneven temperature, and ensuring that the thin film deposition reaction can proceed under stable and uniform temperature conditions, thereby improving the quality and uniformity of thin film deposition.

[0061] In some embodiments, the spray plate 1 is provided with a plurality of spray holes 11, and the plurality of heating units 211 are staggered with the plurality of spray holes 11.

[0062] In the above embodiments, the multiple heating units 211 and the multiple spray holes 11 are staggered, which can avoid the heating units 211 from interfering with the uniform gas path on the spray plate 1, ensuring the smooth flow and temperature uniformity of the precursor gas near the spray holes 11, so that the gas can be sprayed onto the wafer surface in a stable and uniform state, which is beneficial to improving the uniformity and quality of thin film deposition.

[0063] In some embodiments, see Figure 1 The air intake structure also includes a top plate 4, an air distribution plate 5, and an air intake channel 6. The top plate 4 is disposed between the spray plate 1 and the temperature regulating component 2, and the temperature regulating component 2 is attached to the side of the top plate 4 away from the spray plate 1. The air distribution plate 5 is disposed between the top plate 4 and the spray plate 1 and forms an air distribution gap between the top plate 4. The air intake channel 6 passes through the temperature regulating component 2 and the top plate 4, and the outlet of the air intake channel 6 is connected to the air distribution gap.

[0064] In the above embodiment, the temperature regulating component 2 is attached to the side of the top plate 4 away from the spray plate 1, which facilitates adaptation to the current equipment structure. The gas equalization gap formed by the gas equalization plate 5 and the top plate 4 provides a buffer and redistribution space for the precursor gas. When the gas enters from the air inlet channel 6, it will diffuse and mix within the gas equalization gap. The holes on the gas equalization plate 5 will guide and disperse the gas, allowing it to flow more evenly to each spray hole 11 on the spray plate 1, thereby improving the uniformity of the precursor gas distribution on the surface of the spray plate 1.

[0065] This application also provides a reaction apparatus, which includes the above-described air intake structure.

[0066] In the above embodiment, the air intake structure of the reaction device includes a spray plate 1, a temperature regulating component 2, and a control component 3. The temperature regulating component 2 is arranged opposite to the spray area of ​​the spray plate 1. The temperature regulating component 2 includes a heating layer 21, an isolation layer 22, and a feedback layer 23. The heating layer 21 is disposed on the side of the isolation layer 22 close to the spray plate 1, and the feedback layer 23 is disposed on the side of the isolation layer 22 away from the spray plate 1. The heating layer 21 includes multiple arrayed heating units 211, and the feedback layer 23 includes multiple arrayed temperature measuring units 231. The multiple temperature measuring units 231 are correspondingly arranged with the multiple heating units 211. Both the heating layer 21 and the feedback layer 23 are electrically connected to the control component 3. Each temperature measuring unit 231 can accurately detect the heating temperature of the corresponding heating unit 211, enabling the control component 3 to more accurately control the heating power of the heating unit 211, thereby improving the uniformity of the temperature distribution of the spray plate 1, making the deposition rate of the thin film consistent in different areas of the substrate surface, and improving the uniformity of thin film deposition.

[0067] This application also provides a semiconductor thin film deposition apparatus, which includes the above-described air intake structure; or, This includes the reaction apparatus described above.

[0068] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. An air intake structure, characterized in that, include: Sprayer plate (1); Temperature regulating component (2), the temperature regulating component (2) is disposed opposite to the spray area of ​​the spray plate (1), the temperature regulating component (2) includes a heating layer (21), an isolation layer (22) and a feedback layer (23). The heating layer (21) is disposed on the side of the isolation layer (22) close to the spray plate (1), and the feedback layer (23) is disposed on the side of the isolation layer (22) away from the spray plate (1). The heating layer (21) includes a plurality of heating units (211) arranged in an array, and the feedback layer (23) includes a plurality of temperature measuring units (231) arranged in an array. The plurality of temperature measuring units (231) are disposed corresponding to the plurality of heating units (211). The control component (3), the heating layer (21) and the feedback layer (23) are both electrically connected to the control component (3).

2. The intake structure according to claim 1, characterized in that, The heating layer (21) includes a plurality of first heating lines (212) and a plurality of second heating lines (213). The plurality of first heating lines (212) are connected to a plurality of heating units (211) along a first direction, and the plurality of second heating lines (213) are connected to a plurality of heating units (211) along a second direction. The second direction intersects with the first direction.

3. The intake structure according to claim 2, characterized in that, The control component (3) includes a heating controller (31), and the plurality of first heating lines (212) and the plurality of second heating lines (213) are all independently connected to the heating controller (31).

4. The intake structure according to claim 2, characterized in that, The feedback layer (23) includes a plurality of first temperature measuring lines (232) and a plurality of second temperature measuring lines (233). The plurality of first temperature measuring lines (232) are connected to a plurality of temperature measuring units (231) along the first direction, and the plurality of second temperature measuring lines (233) are connected to a plurality of temperature measuring units (231) along the second direction.

5. The intake structure according to claim 4, characterized in that, The control component (3) includes a temperature controller (32), and the plurality of first temperature measuring lines (232) and the plurality of second temperature measuring lines (233) are all independently connected to the temperature controller (32).

6. The intake structure according to claim 1, characterized in that, The temperature regulating component (2) includes a heat-conducting layer (24) and a protective layer (25). The heat-conducting layer (24) is attached to the side of the heating layer (21) close to the spray plate (1), and the protective layer (25) is attached to the side of the feedback layer (23) away from the spray plate (1).

7. The intake structure according to claim 6, characterized in that, The heating unit (211) is a heating resistor obtained by the first etching process, and the temperature measuring unit (231) is a thermocouple obtained by the second etching process; The isolation layer (22) is a silicon oxide layer, the thermally conductive layer (24) is an aluminum nitride ceramic layer, and the protective layer (25) is a silicon nitride layer.

8. The intake structure according to claim 1, characterized in that, The spray plate (1) is provided with a plurality of spray holes (11), and the plurality of heating units (211) are provided corresponding to the plurality of spray holes (11).

9. The intake structure according to claim 1, characterized in that, The spray plate (1) is provided with a plurality of spray holes (11), and the plurality of heating units (211) are staggered with the plurality of spray holes (11).

10. The intake structure according to claim 1, characterized in that, It also includes a top plate (4), an air distribution plate (5), and an air inlet channel (6). The top plate (4) is disposed between the spray plate (1) and the temperature regulating component (2), and the temperature regulating component (2) is attached to the side of the top plate (4) away from the spray plate (1). The air distribution plate (5) is disposed between the top plate (4) and the spray plate (1) and forms an air distribution gap with the top plate (4). The air intake channel (6) passes through the temperature regulating component (2) and the top plate (4), and the outlet of the air intake channel (6) is connected to the air equalization gap.

11. A reaction apparatus, characterized in that, Includes the air intake structure as described in any one of claims 1-10.

12. A semiconductor thin film deposition apparatus, characterized in that, Includes the air intake structure as described in any one of claims 1-10; or, Includes the reaction apparatus as described in claim 11.

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