A coating device for silicon carbide single crystal wafer

Abstract

The present application relates to the technical field of single crystal wafer, in particular to a kind of coating device of silicon carbide single crystal wafer, including cylinder, the outside of cylinder is equipped with circulation control component, circulation control component is communicated with the gas storage device and gas recovery device of outside, the inside wall of cylinder is equipped with spare material component and gas support component symmetrically;The present application whole structure is simple and ingenious, through circulation control component, the gas in the inside of cylinder can be recycled, reduce the cost in coating work, through spare material component, multiple silicon carbide single crystal wafers can be placed one by one at the same height position, which is beneficial to reduce the labor intensity of workers, through gas support component, silicon carbide wafer and graphite support can be avoided direct contact, ensure the coating effect of silicon carbide wafer;It has good application prospect and protection value, and is very suitable for use when silicon carbide wafer is coated.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of single crystal wafer, and particularly relates to a coating device for silicon carbide single crystal wafer. BACKGROUND

[0002] A coating device for silicon carbide single crystal wafer is disclosed in Chinese patent CN104498901B, which comprises a furnace body, an induction coil arranged outside the furnace body, the furnace body comprising an upper flange, a double-layer quartz tube and a lower flange, cooling water being passed through the interlayer of the double-layer quartz tube, a graphite processing cavity being arranged in the double-layer quartz tube, heat preservation and insulation material being filled between the graphite processing cavity and the quartz tube, a graphite support being arranged in the graphite processing cavity, a silicon carbide wafer being arranged on the graphite support, an air inlet being arranged on the upper flange and connected with the graphite processing cavity, a valve being arranged on the air inlet, the lower flange being connected with an air outlet, the air outlet being connected with the graphite processing cavity, a valve being arranged on the air outlet, the valve and the graphite processing cavity being airtight when closed, and the opening degree of the valves being adjusted to control the vacuum degree in the graphite processing cavity.

[0003] In actual use, the silicon carbide wafer is arranged on the graphite support, so that the silicon carbide wafer directly contacts the graphite support, resulting in poor coating effect or no coating on the position directly contacting the graphite support. When the silicon carbide wafer is arranged on the graphite support, the silicon carbide wafer and the graphite support need to be placed one by one by manual operation, which is inconvenient when the position is too high or too low, and increases the labor intensity of workers. In addition, the combustion treatment of the gas discharged from the graphite processing cavity increases the gas loss in the coating work and the cost in the coating work.

[0004] Therefore, how to improve the coating effect of the silicon carbide wafer, reduce the labor intensity of workers and reduce the gas loss in the coating work is a problem to be solved by those skilled in the art. SUMMARY

[0005] To solve the problems in the prior art, the present application provides a coating device for silicon carbide single crystal wafer.

[0006] The technical scheme of the present application is as follows:

[0007] The application provides a silicon carbide wafer coating device, which comprises a barrel, a graphite processing cavity is arranged in the barrel, a first output pipe is arranged at the bottom of the barrel and is in sealed and fixed communication with the barrel, a third input pipe is arranged on the side wall of the barrel and is in sealed and fixed communication with the barrel, a circulation control assembly is arranged between the first output pipe and the third input pipe, the circulation control assembly is in communication with an external gas storage device and a gas recovery device, a standby component is symmetrically arranged on the inner side wall of the barrel, and a gas supporting component is arranged between the inner part of the barrel and the third input pipe.

[0008] Further, the circulation control assembly comprises a first conversion valve, the input end of the first conversion valve is in sealed and fixed communication with the first output pipe and the first input pipe, the first input pipe is in communication with the external gas storage device, the output end of the first conversion valve is provided with a fan in sealed and fixed communication therewith, the fan is driven by a driving motor, the output end of the fan is provided with a second conversion valve in sealed and fixed communication therewith, the output end of the second conversion valve is provided with a second output pipe and a second input pipe in sealed and fixed communication therewith in parallel, the second output pipe is connected with the external gas recovery device, and the other end of the second input pipe is in communication with the first output pipe.

[0009] Further, the standby component comprises a long slot, the long slot is symmetrically arranged in the inner side wall of the barrel, a rotating shaft is rotatably connected to the inner part of the long slot and close to the upper and lower ends of the long slot, the rotating shaft is driven by a rotating shaft motor, the outer side of the rotating shaft is provided with a rotating wheel fixedly connected thereto, the rotating shaft motor drives the rotating shaft to rotate, the outer sides of the upper and lower rotating wheels in the same long slot are provided with a transmission chain in cooperation, and the outer surface of the transmission chain is provided with a plurality of supporting blocks fixedly connected thereto and uniformly distributed.

[0010] Further, the gas supporting component comprises an annular cavity, the annular cavity is arranged in the side wall of the barrel, the annular cavity is in sealed and fixed communication with the end of the third input pipe, a plurality of layers of annularly distributed sliding grooves are arranged between the annular cavity and the inner side of the barrel, the spacing between the sliding grooves of each layer is equal to the spacing between the supporting blocks on the outer surface of the transmission chain, a stop block is arranged in the sliding groove in sealed and sliding connection, the stop block is made of graphite material, air inlet channels are arranged on the upper surfaces of the two side faces of the stop block, U-shaped channels are arranged on the side walls of the sliding grooves corresponding to the air inlet channels of the two side faces of the stop block, and a return spring is arranged between the outer end of the stop block and the outer end of the sliding groove.

[0011] Further, the opening of the top of the cylinder body is provided with a top cover rotationally connected therewith, one side of the top cover is hingedly connected with the top of the cylinder body, the other side of the top cover is buckled with the top of the cylinder body through a locking device, and the lower surface of the top cover is provided with a sealing gasket fixedly connected therewith.

[0012] Further, the second input pipe and the third input pipe are sealingly and fixedly communicated with a refrigerating machine, and opening the refrigerating machine can cool the gas passing through the second input pipe and the third input pipe.

[0013] Further, the inner side of the cylinder body is embedded with a plurality of annularly distributed electric heating devices, the outer side of the cylinder body is covered with a heat preservation and insulation material, and the outer side of the heat preservation and insulation material is provided with an outer shell.

[0014] Further, the electric heating device adopts an electric heating coil.

[0015] Further, the gas storage device internally stores inert gas and methane gas, and the inert gas adopts argon.

[0016] Further, the outer side of the first output pipe is provided with a pressure sensor sealingly and fixedly communicated therewith.

[0017] The beneficial effects achieved are:

[0018] When the present application is used for coating operation of silicon carbide single crystal wafers, the plurality of silicon carbide single crystal wafers can be placed on the plurality of receiving blocks one by one through the slow downward movement of the transmission chain and the receiving block, the top cover is then rotated downward, and the top cover is locked on the top of the cylinder body by using the locking device, the sealing gasket on the lower side of the top cover is pressed on the outside of the opening of the top of the cylinder body, so that the graphite processing cavity in the cylinder body is a sealed cavity, and the design can place the plurality of silicon carbide single crystal wafers one by one at the same height position, and manual placement of the silicon carbide wafers at different heights is no longer needed, which is beneficial to reduce the labor intensity of workers.

[0019] The fan is driven to operate by the driving motor, and the first input pipe, the fan, the second input pipe and the third input pipe are communicated by controlling the first switching valve and the second switching valve, so that the gas in the gas storage device is input into the annular cavity in the cylinder body, and the gas pressure in the annular cavity increases to push the stop block out to the lower side of the silicon carbide single crystal wafer in the cylinder body, thereby supporting the silicon carbide single crystal wafer, and when the stop block is pushed out to the limit position in the cylinder body, the air inlet channels on both sides of the stop block are communicated with the U-shaped channel, at this time, the gas in the annular cavity enters the air inlet channel through the U-shaped channel and is blown out from the upper surface of the stop block, and the blown-out gas lifts the silicon carbide single crystal wafer to a suspended state, which can avoid direct contact between the silicon carbide wafer and the graphite support, thereby ensuring that all positions outside the silicon carbide wafer can be coated with a film, thereby improving the film coating effect of the silicon carbide wafer.

[0020] During the film coating process, the gas pressure in the cylinder body is stably controlled at the required working pressure by the cooperation of the pressure sensor and the first switching valve and the second switching valve, and the first output pipe, the fan, the second input pipe and the third input pipe are communicated by controlling the first switching valve and the second switching valve, so that the gas in the cylinder body is internally circulated through the first output pipe and the third input pipe, which not only maintains the suspension support of the silicon carbide single crystal wafer, but also speeds up the flow of the gas in the cylinder body, which is beneficial to ensuring the uniformity of the film coating of the silicon carbide wafer and further improves the film coating effect of the silicon carbide wafer.

[0021] When it is necessary to cool the gas in the cylinder body, the first output pipe, the fan, the second input pipe and the third input pipe are communicated by controlling the first switching valve and the second switching valve, and the refrigeration machine is turned on to cool the gas passing through the second input pipe and the third input pipe, thereby realizing the cooling of the gas in the cylinder body, which can cool the gas in the cylinder body more quickly by air cooling, is beneficial to improving the cooling effect and is also beneficial to improving the film coating efficiency of the silicon carbide wafer.

[0022] After the film coating is completed, the first output pipe, the fan and the second output pipe are communicated by controlling the first switching valve and the second switching valve, so that the gas in the cylinder body is input into the gas recovery device for recovery, which can reduce the gas consumption during the film coating work and reduce the cost of the film coating work.

[0023] In summary, the whole structure of the present application is simple and ingenious, which can avoid the direct contact between the silicon carbide wafer and the graphite support, thereby ensuring the film coating effect of the silicon carbide wafer, and can improve the cooling effect through the air cooling mode, which is beneficial to improve the efficiency of the silicon carbide wafer coating, and the gas in the cylinder can be recycled, reducing the gas loss in the coating work, reducing the cost in the coating work, and the multiple silicon carbide single crystal wafers can be placed one by one at the same height position, and the silicon carbide wafers are placed one by one at different heights by artificial, which is beneficial to reduce the labor intensity of workers, has good application prospect and protection value, and is very suitable for use in silicon carbide wafer coating. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 is the external structure schematic diagram of the present application;

[0025] Figure 2 is Figure 1 is the A-A cross-sectional structure schematic diagram in the present application;

[0026] Figure 3 is Figure 2 is the B-B cross-sectional structure schematic diagram in the present application;

[0027] Figure 4 is Figure 3 is the first part structure enlarged schematic diagram in the present application;

[0028] Figure 5 is Figure 4 is the C-C cross-sectional structure schematic diagram in the present application. DETAILED DESCRIPTION

[0029] In order to make the skilled in the art understand the present application, the specific embodiments of the present application will be described below in conjunction with the drawings.

[0030] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the skilled in the art without creative labor are within the protection scope of the present application.

[0031] In the description of the present application, it needs to be explained that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for the purpose of description and cannot be understood as indicating or implying relative importance.

[0032] It should be noted that when a component is referred to as "mounted on" another component, it can be directly on the other component or there can be a middle component. When a component is considered to be "provided on" another component, it can be directly provided on the other component or there can be a middle component. When a component is considered to be "fixed to" another component, it can be directly fixed to the other component or there can be a middle component.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terms used in the specification of the present application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "or / and" used herein includes any and all combinations of one or more related listed items.

[0034] As shown in Figure 1 , 2 The present application provides a silicon carbide single crystal wafer coating device, which comprises a base 1, the upper surface of the base 1 is provided with a cylinder body 2 fixedly connected thereto, a graphite treatment cavity is arranged in the cylinder body 2, an opening is arranged at the top of the cylinder body 2, a top cover 3 is rotatably connected to the opening, one side of the top cover 3 is hingedly connected to the top of the cylinder body 2, the other side of the top cover 3 is buckled to the top of the cylinder body 2 through a locking device 4, and a sealing gasket 5 is fixedly connected to the lower surface of the top cover 3. The locking device is prior art, and its structure and principle will not be described here. In use, first, the top cover 3 is rotated upward, the silicon carbide single crystal wafer is placed in the cylinder body 2, then the top cover 3 is rotated downward, and the top cover 3 is locked on the top of the cylinder body 2 by using the locking device 4. The sealing gasket 5 on the lower side of the top cover 3 is pressed on the outside of the opening at the top of the cylinder body 2, so that the graphite treatment cavity in the cylinder body 2 is a sealed cavity, thereby facilitating the coating operation of the silicon carbide single crystal wafer.

[0035] As shown in Figure 1 , 2As shown, the bottom of the barrel 2 is provided with a first output pipe 6 in sealing and fixed communication therewith, the outer side of the first output pipe 6 is provided with a pressure sensor 7 in sealing and fixed communication therewith, the outer end of the first output pipe 6 is provided with a first switching valve 8 in sealing and fixed communication therewith, the input end of the first switching valve 8 is provided with a first input pipe 9 in parallel with the first output pipe 6, the first input pipe 9 is connected with an external gas storage device, the gas storage device internally stores inert gas and methane gas, the inert gas can adopt argon, the output end of the first switching valve 8 is provided with a fan 10 in sealing and fixed communication therewith, the fan 10 is driven by a driving motor 11, the output end of the fan 10 is provided with a second switching valve 12 in sealing and fixed communication therewith, the output end of the second switching valve 12 is provided with a second output pipe 13 and a second input pipe 14 in sealing and fixed communication therewith in parallel, the second output pipe 13 is connected with an external gas recovery device, the other end of the second input pipe 14 is provided with a refrigerator 15 in sealing and fixed communication therewith, the output end of the refrigerator 15 is provided with a third input pipe 16 in sealing and fixed communication therewith, the other end of the third input pipe 16 is in sealing and fixed communication with the side wall of the barrel 2; in the working process, by controlling the first switching valve 8, the first output pipe 6 can be individually and unidirectionally communicated with the fan 10, and the first input pipe 9 can be individually and unidirectionally communicated with the fan 10, by controlling the second switching valve 12, the fan 10 can be individually and unidirectionally communicated with the second output pipe 13, and the fan 10 can be individually and unidirectionally communicated with the second input pipe 14; the design can input the gas in the gas storage device into the inside of the barrel 2, can input the gas in the barrel 2 into the inside of the gas recovery device, and can also make the gas in the barrel 2 internally circulate through the first output pipe 6 and the third input pipe 16, the pressure sensor 7 and the first switching valve 8 and the second switching valve 12 can effectively control the gas pressure in the barrel 2, and opening the refrigerator 15 can cool the gas passing through the second input pipe 14 and the third input pipe 16.

[0036] As Figure 2 、 3As shown, the inner side wall of the barrel 2 is symmetrically provided with a long slot 17, and a rotating shaft 18 is rotatably connected to the inner side of the long slot 17 near the upper and lower ends thereof. The rotating shaft 18 is driven by a rotating shaft motor, and the outer side of the rotating shaft 18 is provided with a rotating wheel 19 fixedly connected thereto. The rotating shaft motor drives the rotating shaft 18 to rotate the rotating wheel 19. The outer sides of the upper and lower rotating wheels 19 located in the same long slot 17 are cooperatively provided with a transmission chain 20. The outer surface of the transmission chain 20 is provided with a plurality of supporting blocks 21 fixedly connected thereto and uniformly distributed. In the working process, the rotating shaft motor drives the rotating shaft 18 to rotate the rotating wheel 19, and the transmission chain 20 moves up and down with the supporting blocks 21. Before coating the silicon carbide single crystal wafer, the two symmetric transmission chains 20 can be controlled to move downward synchronously. Then, the silicon carbide single crystal wafer is placed on the supporting blocks 21. As the supporting blocks 21 on the inner sides of the transmission chains 20 move downward, the silicon carbide single crystal wafers can be placed on the corresponding supporting blocks 21 one by one. This design can place multiple silicon carbide single crystal wafers at the same height one by one, and it is no longer necessary to manually place the silicon carbide wafers at different heights one by one, which is beneficial to reduce the labor intensity of workers.

[0037] As Figure 2 , 3, 4, 5, the side wall of the barrel 2 is internally provided with an annular cavity 22, the annular cavity 22 is sealingly fixedly communicated with the end of the third input pipe 16, the annular cavity 22 is provided with a plurality of layers of annularly distributed chutes 23 between the inner side surface of the barrel 2, the spacing between each layer of chute 23 is equal to the spacing between the receiving block 21 on the outer surface of the transmission chain 20, the chute 23 is internally provided with a stop block 24 sealingly slidingly connected therewith, the material of the stop block 24 adopts the material of the graphite support in the prior art, the stop block 24 is provided with an air inlet channel 25 penetrating the upper surface thereof on the two side surfaces thereof, the side wall of the chute 23 is provided with a U-shaped channel 26 corresponding to the air inlet channel 25 on the two side surfaces of the stop block 24, the outer end of the stop block 24 is provided with a reset spring 27 between the outer end of the chute 23; in the working process, after the plurality of silicon carbide single crystal wafers are placed on the corresponding receiving blocks 21 one by one, the driving motor 11 is started to drive the fan 10 to operate, and the first input pipe 9, the fan 10, the second input pipe 14 and the third input pipe 16 are communicated by controlling the first switching valve 8 and the second switching valve 12, so that the gas in the gas storage device is input into the annular cavity 22 in the barrel 2, the gas pressure in the annular cavity 22 increases and pushes the stop block 24 out to the inside of the barrel 2 below the silicon carbide single crystal wafer, thereby supporting the silicon carbide single crystal wafer, at the same time, when the stop block 24 is pushed out to the limit position in the barrel 2, the air inlet channel 25 on the two side surfaces of the stop block 24 is communicated with the U-shaped channel 26, at this time, the gas in the annular cavity 22 enters the air inlet channel 25 through the U-shaped channel 26 and is blown out from the upper surface of the stop block 24, the blown-out gas lifts the silicon carbide single crystal wafer to a suspended state, which can avoid the direct contact between the silicon carbide wafer and the graphite support, thereby ensuring that all positions outside the silicon carbide wafer can be coated with a film, thereby improving the film coating effect of the silicon carbide wafer.

[0038] As shown in Figure 2 , 3, the inner side surface of the barrel 2 is embedded with a plurality of annularly distributed electric heating devices 28, which can adopt an electric heating pipe or an electric heating coil, the outer side of the barrel 2 is covered with a heat preservation and insulation material 29, and the outer side of the heat preservation and insulation material is provided with an outer shell 30, in the working process, the electric heating device 28 can generate heat after being powered on, the heat preservation and insulation material 29 can prevent heat loss, and the outer shell 30 can support and protect the heat preservation and insulation material 29.

[0039] In summary, the working process of coating operation of the silicon carbide wafer using the present application is as follows: firstly, rotate the top cover 3 upward, then control the two symmetrical transmission chains 20 to move downward synchronously, and put the silicon carbide wafer into the opening at the top of the cylinder 2 and place it on the receiving block 21. With the slow downward movement of the receiving block 21 on the inner side of the transmission chain 20, the silicon carbide wafer is placed on the receiving block 21 one by one. Then, rotate the top cover 3 downward and lock it on the top of the cylinder 2 using the locking device 4. The sealing gasket 5 on the lower side of the top cover 3 is pressed on the outside of the opening at the top of the cylinder 2, so that the graphite processing cavity inside the cylinder 2 is a sealed cavity. This design allows multiple silicon carbide wafers to be placed one by one at the same height, eliminating the need for manual placement of the silicon carbide wafer at different heights, which reduces the labor intensity of workers.

[0040] Then, the driving motor 11 is started to drive the fan 10 to run, and the first input pipe 9, the fan 10, the second input pipe 14, and the third input pipe 16 are connected by controlling the first switching valve 8 and the second switching valve 12, so that the gas in the gas storage device is input into the annular cavity 22 inside the cylinder 2. When the gas pressure in the annular cavity 22 increases, the stop block 24 will be pushed out to the inside of the cylinder 2 below the silicon carbide wafer, thereby supporting the silicon carbide wafer. At the same time, when the stop block 24 is pushed out to the limit position inside the cylinder 2, the gas inlet channels 25 on both sides of the stop block 24 will be connected with the U-shaped channel 26. At this time, the gas in the annular cavity 22 will enter the gas inlet channels 25 through the U-shaped channel 26 and blow out from the upper surface of the stop block 24. The blown-out gas will lift the silicon carbide wafer to a suspended state. This design can avoid direct contact between the silicon carbide wafer and the graphite support, thereby ensuring that all positions outside the silicon carbide wafer can be coated with a film, thereby improving the film coating effect of the silicon carbide wafer.

[0041] During the coating process, the gas pressure inside the cylinder 2 is stably controlled at the required working pressure by the cooperation of the pressure sensor 7, the first switching valve 8, and the second switching valve 12. The first output pipe 6, the fan 10, the second input pipe 14, and the third input pipe 16 are connected by controlling the first switching valve 8 and the second switching valve 12, so that the gas inside the cylinder 2 circulates inside through the first output pipe 6 and the third input pipe 16. When the gas inside the cylinder 2 circulates, it not only maintains the suspension support of the silicon carbide wafer, but also speeds up the flow of the gas inside the cylinder 2, which is conducive to ensuring the uniformity of the film coating of the silicon carbide wafer and further improving the film coating effect of the silicon carbide wafer.

[0042] When the gas inside the cylinder 2 needs to be cooled, the first output pipe 6, the fan 10, the second input pipe 14 and the third input pipe 16 are communicated by controlling the first switching valve 8 and the second switching valve 12, and the refrigerator 15 is opened, so that the gas passing through the second input pipe 14 and the third input pipe 16 is cooled, and the gas inside the cylinder 2 is cooled. The design can cool the gas inside the cylinder 2 more quickly by air cooling, which is beneficial to improve the cooling effect and improve the efficiency of the silicon carbide wafer coating.

[0043] After coating, the first output pipe 6, the fan 10 and the second output pipe 13 are communicated by controlling the first switching valve 8 and the second switching valve 12, so that the gas inside the cylinder 2 is input into the gas recovery device for recovery. The design can reduce the gas loss during coating work and reduce the cost of coating work.

[0044] In summary, the whole structure of the present application is simple and ingenious, which can avoid the direct contact between the silicon carbide wafer and the graphite support, thereby ensuring the coating effect of the silicon carbide wafer, and can improve the cooling effect by air cooling, which is beneficial to improve the efficiency of the silicon carbide wafer coating, and can recover the gas inside the cylinder 2, reduce the gas loss during coating work, reduce the cost of coating work, and can place multiple silicon carbide wafers at the same height position one by one, without the need for manual placement of the silicon carbide wafer at different heights one by one, which is beneficial to reduce the labor intensity of workers, has good application prospect and protection value, and is very suitable for use in silicon carbide wafer coating.

[0045] The above-mentioned embodiments of the present application do not constitute a limitation on the scope of protection of the present application. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present application shall be included in the scope of protection of the claims of the present application.

Claims

1. A coating device for a silicon carbide single wafer, characterized in that: The invention comprises a cylinder (2), wherein a graphite processing chamber is provided in the cylinder (2), a first output pipe (6) which is sealed and fixedly connected to the cylinder (2) is provided at the bottom of the cylinder (2), a third input pipe (16) which is sealed and fixedly connected to the cylinder (2), a circulation control component is provided between the first output pipe (6) and the third input pipe (16), the circulation control component is connected to an external gas storage device and a gas recovery device, a material preparation component is symmetrically provided on the inner side wall of the cylinder (2), and a gas support component is provided between the interior of the cylinder (2) and the third input pipe (16); the gas in the gas storage device can be input into the interior of the cylinder (2) through the circulation control component, and the gas in the cylinder (2) can also be input into the interior of the gas recovery device, and the gas in the cylinder (2) can also be internally circulated through the first output pipe (6) and the third input pipe (16); the material preparation component can place a plurality of silicon carbide single crystals one by one at the same height position, and the gas support component can suspend and support the silicon carbide single crystals; The material preparation assembly includes a long groove (17), the long groove (17) is symmetrically opened in the inner side wall of the cylinder (2), the interior of the long groove (17) is rotatably connected to a rotating shaft (18) near the upper and lower ends thereof, the rotating shaft (18) is driven by a rotating shaft motor, and a rotating wheel (19) fixedly connected to the rotating shaft (18) is provided on the outer side of the rotating shaft (18), and the rotating shaft motor drives the rotating shaft (18) to drive the rotating wheel (19) to rotate, and a transmission chain (20) is installed on the outer side of the upper and lower rotating wheels (19) located in the same long groove (17), and the outer surface of the transmission chain (20) is provided with a plurality of receiving blocks (21) fixedly connected to the rotating shaft and evenly distributed; The gas support assembly includes an annular cavity (22), which is opened inside the side wall of the cylinder (2). The annular cavity (22) is sealed and fixedly connected to the end of the third input pipe (16). Several layers of annularly distributed slide grooves (23) are opened between the annular cavity (22) and the inner side surface of the cylinder (2). The spacing between each layer of slide grooves (23) is equal to the spacing between the receiving blocks (21) on the outer surface of the transmission chain (20). A stopper (24) is provided inside the slide groove (23) and is sealed and slidably connected to it. The material of the stopper (24) is made of graphite material. An air inlet channel (25) is opened on both sides of the stopper (24) and passes through its upper surface. A U-shaped channel (26) is opened on the side wall of the slide groove (23) corresponding to the air inlet channel (25) on both sides of the stopper (24). A reset spring (27) is provided between the outer end of the stopper (24) and the outer end of the slide groove (23).

2. The device for coating a silicon carbide single wafer according to claim 1, wherein: The circulation control assembly includes a first conversion valve (8), an input end of the first conversion valve (8) is sealed and fixedly connected to a first output pipe (6) and a first input pipe (9) in parallel, the first input pipe (9) is connected to an external gas storage device, the output end of the first conversion valve (8) is provided with a fan (10) in sealed and fixed communication with the first conversion valve (8), the fan (10) is driven by a drive motor (11), the output end of the fan (10) is provided with a second conversion valve (12) in sealed and fixed communication with the first conversion valve (12), the output end of the second conversion valve (12) is provided with a second output pipe (13) and a second input pipe (14) in parallel, the second output pipe (13) is connected to an external gas recovery device, and the other end of the second input pipe (14) is connected to the first output pipe (6).

3. The device for coating a silicon carbide single wafer according to claim 1, wherein: A top cover (3) rotatably connected to the opening at the top of the cylinder (2) is provided. One side of the top cover (3) is hingedly connected to the top of the cylinder (2), and the other side of the top cover (3) is snap-connected to the top of the cylinder (2) via a locking device (4). A sealing gasket (5) is fixedly connected to the lower surface of the top cover (3).

4. The device for coating a silicon carbide single wafer according to claim 2, wherein: A refrigerator (15) is sealed and fixedly connected between the second input pipe (14) and the third input pipe (16). Turning on the refrigerator (15) can cool the gas passing through the second input pipe (14) and the third input pipe (16).

5. The device for coating a silicon carbide single wafer according to claim 1, wherein: The inner side surface of the cylinder (2) is embedded with a plurality of annularly distributed electric heating devices (28), the outer side of the cylinder (2) is covered with a heat-insulating material (29), and the outer side of the heat-insulating material is provided with an outer shell (30).

6. The device for coating a silicon carbide single wafer according to claim 5, wherein: The electric heating device (28) adopts an electric heating coil.

7. The device for coating a silicon carbide single wafer according to claim 1, wherein: The gas storage device stores inert gas and methane gas, and the inert gas is argon.

8. The device for coating a silicon carbide single wafer according to claim 1, wherein: A pressure sensor (7) is provided on the outside of the first output pipe (6) and is in sealed and fixed communication with the first output pipe (6).

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