Substrate processing apparatus and substrate processing method

Abstract

Suppress damage to the polished surface of the substrate and increase the polishing rate. The substrate processing apparatus includes: a worktable (100) for supporting the substrate (WF); a pad retainer (226) for holding a polishing pad (222) that polishes the substrate (WF) supported by the worktable (100); a nozzle (228) for supplying a polishing liquid around the pad retainer (226); and a pad rotation mechanism for rotating the pad retainer (226). The pad retainer (226) has: a discharge hole (221-2a) formed in the central portion of the holding surface (221-2c) for holding the polishing pad (222); and a discharge path (221-2b) communicating from the discharge hole (221-2a) to the outside of the pad retainer (226).

Description

Technical Field

[0001] The present application relates to a substrate processing apparatus and a substrate processing method. The present application claims priority based on Japanese Patent Application No. 2021-2158 filed on January 8, 2021. The entire disclosure of the specification, claims, drawings, and abstract of Japanese Patent Application No. 2021-2158 is incorporated herein by reference in its entirety. Background Art

[0002] Among substrate processing apparatuses used in semiconductor processing steps, there is a CMP (Chemical Mechanical Polishing) apparatus. CMP apparatuses can be roughly classified into: "face-up type (the way the polished surface of the substrate faces upward)" and "face-down type (the way the polished surface of the substrate faces downward)" according to the direction in which the polished surface of the substrate faces.

[0003] Patent Document 1 discloses that in a face-up type polishing apparatus, a polishing pad having a diameter smaller than that of the substrate is rotated while being in contact with the substrate to polish the substrate. This polishing apparatus is configured such that a circulation path is radially formed from the center of a polishing tool for holding the polishing pad, and polishing liquid supplied to the center of the polishing tool is supplied from the outer periphery of the polishing tool to the substrate. Further, this polishing apparatus is configured such that the polishing liquid supplied from the outer periphery of the polishing tool to the substrate is recovered to the center of the polishing tool through a spiral groove formed in the polishing pad.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Patent No. 5919592 Gazette

[0007] (Problems to be Solved by the Invention)

[0008] However, the technique described in Patent Document 1 does not consider how to suppress damage to the polished surface of the substrate in order to increase the polishing rate.

[0009] That is, since the polishing tool is a rotating part, in order to supply the polishing liquid through the polishing tool, it is necessary to provide a rotary joint (or a part having the same function as the rotary joint; hereinafter simply referred to as a rotary joint). When the polishing liquid passes through the rotary joint, the parts inside the rotary joint are worn by the abrasive grains contained in the polishing liquid, and the particles generated by the wear are mixed with the polishing liquid between the polishing pad and the substrate, which may damage the polished surface of the substrate.

[0010] In addition, when the polishing liquid is not supplied via a polishing tool, it is difficult to supply a sufficient amount of the polishing liquid between the polishing surface of the polishing pad and the surface to be polished of the substrate. As described in Patent Document 1, by using a polishing pad formed with spiral grooves and forming a circulation path in the polishing tool, the polishing liquid can be circulated. However, since the method disclosed in Patent Document 1 circulates the polishing liquid via the polishing tool, it is not always possible to supply fresh polishing liquid between the polishing tool and the substrate. Therefore, the method of Patent Document 1 may not supply sufficient fresh polishing liquid to the center of the surface to be polished of the substrate, which may result in a decrease in the polishing rate. In addition, when the polishing liquid is circulated for use, residues generated during the polishing of the substrate may also damage the surface to be polished of the substrate. Summary of the Invention

[0011] Therefore, one object of the present application is to suppress damage to the surface to be polished of the substrate and improve the polishing rate.

[0012] (Means for Solving the Problem)

[0013] According to one embodiment, a substrate processing apparatus is disclosed, including: a worktable for supporting a substrate; a pad holder for holding a polishing pad for polishing the substrate supported by the worktable; a nozzle for supplying a polishing liquid to the periphery of the pad holder; and a pad rotation mechanism for rotating the pad holder. The pad holder has: a discharge hole formed in the central portion of the holding surface for holding the polishing pad; and a discharge path communicating from the discharge hole to the outside of the pad holder. Brief Description of the Drawings

[0014] Figure 1 is a perspective view generally showing the overall configuration of a substrate processing apparatus according to one embodiment.

[0015] Figure 2 is a top view generally showing the overall configuration of a substrate processing apparatus according to one embodiment.

[0016] Figure 3 is a perspective view generally showing a multi-axis arm according to one embodiment.

[0017] Figure 4 is a perspective view generally showing a pad holder according to one embodiment.

[0018] Figure 5 is a cross-sectional view generally showing a pad holder according to one embodiment.

[0019] Figure 6 is a top view generally showing a second holder body according to one embodiment.

[0020] Figure 7Is a top view schematically showing a polishing pad according to an embodiment.

[0021] Figure 8 Is a flowchart of a substrate processing method according to an embodiment.

[0022] Figure 9 Is a cross-sectional view schematically showing a pad holder according to an embodiment.

[0023] Figure 10 Is viewed from above Figure 9 The top view of the pad holder shown. Detailed Description of the Invention

[0024] Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method of the present invention will be described with reference to the accompanying drawings. In the drawings, the same or similar reference numerals are assigned to the same or similar components, and in the description of each embodiment, repeated description of the same or similar components is omitted. In addition, the features shown in the various embodiments can be applied to other embodiments as long as they do not conflict with each other.

[0025] Figure 1 Is a perspective view schematically showing the overall configuration of a substrate processing apparatus according to an embodiment. Figure 2 Is a top view schematically showing the overall configuration of a substrate processing apparatus according to an embodiment. Figure 1 And Figure 2 The substrate processing apparatus 1000 shown has: a worktable 100, a multi-axis arm 200, support members 300A, 300B, a dresser 500, and a film thickness measuring device (endpoint detector) 600. In addition, Figure 1 The multi-axis arm 200 is omitted for clarity of illustration.

[0026] <Worktable>

[0027] The worktable 100 is a member for supporting the substrate WF with the polished surface of the substrate WF to be processed facing vertically upward. In one embodiment, the worktable 100 has a support surface 100a for supporting the back surface opposite to the polished surface of the substrate WF, and is configured to be rotatable by a drive mechanism such as a motor not shown. A plurality of holes 102 are formed in the support surface 100a, and the worktable 100 is configured to be able to vacuum adsorb the substrate WF via the holes 102. The substrate processing apparatus 1000 of the present embodiment is a face-up type substrate processing apparatus that polishes the substrate WF with the polished surface facing upward.

[0028] <Multi-axis arm>

[0029] Figure 3 Is a perspective view schematically showing a multi-axis arm according to an embodiment. As Figure 2 And Figure 3As shown, the multi-axis arm 200 is a member that holds a plurality of processing tools for performing various processes on the substrate WF supported by the worktable 100, and is disposed adjacent to the worktable 100. The multi-axis arm 200 of the present embodiment is configured to hold the following components: a large-diameter polishing pad 222 for polishing the substrate WF; a cleaning tool 232 for cleaning the substrate WF; a small-diameter polishing pad 242 for processing and polishing the substrate WF; and a photographing device (camera) 252 for measuring the diameter of the substrate WF.

[0030] The multi-axis arm 200 includes: a swing shaft rod 210 extending in a direction (height direction) orthogonal to the substrate WF; a rotational drive mechanism 212 such as a motor for driving the swing shaft rod 210 to rotate; and a first arm 220, a second arm 230, a third arm 240, and a fourth arm 250 that are supported by the swing shaft rod 210 and radially arranged around the swing shaft rod 210.

[0031] A rotary shaft rod 224 extending in the height direction is mounted on the first arm 220, and a pad holder 226 is mounted at the front end of the rotary shaft rod 224. The large-diameter polishing pad 222 is held by the pad holder 226. The multi-axis arm 200 is provided with a lifting mechanism 227 for lifting the pad holder 226 relative to the substrate WF. The lifting mechanism 227 can be realized by a known mechanism such as an air cylinder. In addition, the multi-axis arm 200 is also provided with a pad rotation mechanism 229 for rotating the pad holder 226. The pad rotation mechanism 229 can be realized by a known mechanism such as a motor, and the pad holder 226 can be rotated by rotating the rotary shaft rod 224.

[0032] The multi-axis arm 200 is provided with a nozzle 228 disposed around the pad holder 226. The nozzle 228 is configured to supply a polishing liquid (slurry) to the substrate WF. The nozzle 228 includes: a first nozzle 228-1 disposed on the swing path of the pad holder 226; and a second nozzle 228-2 disposed on the swing path of the pad holder 226 on the side opposite to the first nozzle 228-1 with the pad holder 226 interposed therebetween. The first nozzle 228-1 and the second nozzle 228-2 are each configured to be able to supply the polishing liquid to the polished surface of the substrate WF.

[0033] A rotating shaft rod 234 extending in the height direction is installed on the second arm 230, and a cleaning tool holder 236 is installed at the front end of the rotating shaft rod 234. The cleaning tool holder 236 holds the cleaning tool 232. The multi-axis arm 200 is provided with a lifting mechanism 237 for lifting the cleaning tool holder 236 relative to the substrate WF. The lifting mechanism 237 can be realized by a known mechanism such as an air cylinder, for example. In addition, the multi-axis arm 200 is also provided with a cleaning tool rotating mechanism 239 for rotating the cleaning tool holder 236. The cleaning tool rotating mechanism 239 can be realized by a known mechanism such as a motor, for example. By rotating the rotating shaft rod 234, the cleaning tool holder 236 can be rotated.

[0034] The multi-axis arm 200 is provided with an atomizer 238 for supplying a cleaning liquid around the cleaning tool holder 236. The atomizer 238 is configured to be provided on both sides in the swinging direction of the cleaning tool holder 236 with the cleaning tool holder 236 interposed therebetween, and sprays the cleaning liquid onto the substrate WF.

[0035] A rotating shaft rod 244 extending in the height direction is installed on the third arm 240, and a pad holder 246 is installed at the front end of the rotating shaft rod 244. The pad holder 246 holds the small-diameter polishing pad 242. The multi-axis arm 200 is provided with a lifting mechanism 247 for lifting the pad holder 246 relative to the substrate WF. The lifting mechanism 247 can be realized by a known mechanism such as an air cylinder, for example. In addition, the multi-axis arm 200 is also provided with a pad rotating mechanism 249 for rotating the pad holder 246. The pad rotating mechanism 249 can be realized by a known mechanism such as a motor, for example. By rotating the rotating shaft rod 244, the pad holder 246 can be rotated. The fourth arm 250 holds the photographing device 252.

[0036] The multi-axis arm 200 is provided with a nozzle 248 for supplying a polishing liquid around the pad holder 246. The nozzle 248 includes: a first nozzle 248-1 disposed on the swinging path of the pad holder 246; and a second nozzle 248-2 disposed on the swinging path of the pad holder 246 on the side opposite to the first nozzle 248-1 with the pad holder 246 interposed therebetween. The first nozzle 248-1 and the second nozzle 248-2 are configured to supply the polishing liquid to the polished surface of the substrate WF.

[0037] As Figure 2As shown, the first arm 220, the second arm 230, the third arm 240, and the fourth arm 250 of the present embodiment are radially extended around the swing shaft rod 210 with a 90-degree counterclockwise stagger when viewed from above. The rotation drive mechanism 212 can move any one of the large-diameter polishing pad 222, the cleaning tool 232, the small-diameter polishing pad 242, and the imaging device 252 on the substrate WF by driving the swing shaft rod 210 to rotate. In addition, the rotation drive mechanism 212 can move the polishing pad 222 or the polishing pad 242 on the dresser 500 by driving the swing shaft rod 210 to rotate. In addition, the rotation drive mechanism 212 has the function of a swing mechanism that drives the swing shaft rod 210 to rotate alternately in the clockwise and counterclockwise directions, so as to swing the first arm 220, the second arm 230, the third arm 240, and the fourth arm 250. Specifically, when the polishing pad 222, the cleaning tool 232, or the polishing pad 242 is located on the substrate WF, the rotation drive mechanism 212 can swing the polishing pad 222 (pad holder 226), the cleaning tool 232 (cleaning tool holder 236), or the polishing pad 242 (pad holder 246) relative to the substrate WF by alternately rotating and driving the swing shaft rod 210 in the clockwise and counterclockwise directions. The present embodiment shows an example in which the polishing pad 222, the cleaning tool 232, or the polishing pad 242 is rotated and swung in the radial direction of the substrate WF by the rotation drive mechanism 212, that is, reciprocates along an arc, but it is not limited thereto. For example, the swing mechanism may be configured to linearly swing the polishing pad 222, the cleaning tool 232, or the polishing pad 242 in the radial direction of the substrate, that is, reciprocate along a straight line.

[0038] The substrate processing apparatus 1000 is configured to, for example, rotate the table 100 and rotate the polishing pad 222 when the polishing pad 222 is located on the substrate WF, and press the polishing pad 222 against the substrate WF by the lifting mechanism 227 while swinging the polishing pad 222 by the rotation drive mechanism 212 to polish the substrate WF.

[0039] <Support member>

[0040] As Figure 1 and Figure 2As shown, the substrate processing apparatus 1000 includes: a first support member 300A disposed on the swing path of the polishing pad 222 outside the worktable 100; and a second support member 300B disposed on the opposite side of the polishing pad 222 from the first support member 300A across the worktable 100 on the swing path. The first support member 300A and the second support member 300B are line-symmetric across the substrate WF. Therefore, hereinafter, the first support member 300A and the second support member 300B will be appropriately described together as the support member 300. In addition, hereinafter, as an example, the function of the support member 300 when the large-diameter polishing pad 222 swings relative to the substrate WF will be described. However, the same applies to the cleaning tool 232 or the small-diameter polishing pad 242.

[0041] The support member 300 is a member for supporting the polishing pad 222 that swings outward of the worktable 100 by the rotation of the swing shaft rod 210. That is, the substrate processing apparatus 1000 is configured to uniformly polish the polished surface of the substrate WF by swinging the polishing pad 222 to fly out of the outside of the substrate WF (overhang) when polishing the substrate WF. Here, when the polishing pad 222 overhangs, due to various factors such as the inclination of the pad holder 226, the pressure of the polishing pad 222 may be concentrated on the peripheral portion of the substrate WF, and the polished surface of the substrate WF cannot be uniformly polished. Therefore, the substrate processing apparatus 1000 of the present embodiment provides the support member 300 for supporting the polishing pad 222 overhanging outside the substrate WF on both sides of the worktable 100.

[0042] The first support member 300A and the second support member 300B each have support surfaces 301a, 301b that can support the entire polishing surface 222c of the polishing pad 222 in contact with the substrate WF. That is, since the support surfaces 301a, 301b each have an area larger than the area of the polishing surface 222c of the polishing pad 222, even if the polishing pad 222 completely overhangs to the outside of the substrate WF, the entire polishing surface 222c is supported by the support surfaces 301a, 301b. Thus, in the present embodiment, when the polishing pad 222 swings on the substrate WF, the entire polishing surface of the polishing pad 222 contacts and supports the substrate WF, and when swinging to the outside of the worktable 100, the entire polishing surface is also supported by the support member 300. Therefore, it will not be extruded from the regions of the polished surface of the substrate WF and the support surfaces 301a, 301b during swinging.

[0043] <Film thickness measuring device>

[0044] As Figure 1 and Figure 2As shown, the substrate processing apparatus 1000 includes a film thickness measurer 600 for polishing a substrate WF and measuring the film thickness profile of the polished surface of the substrate WF. The film thickness measurer 600 can be constituted by various detectors such as an eddy current detector or an optical detector. As Figure 1 shown, a rotating shaft rod 610 extending in the height direction is disposed adjacent to the worktable 100. The rotating shaft rod 610 can be rotated around the axis of the rotating shaft rod 610 by a rotation driving mechanism such as a motor (not shown). A swing arm 620 is mounted on the rotating shaft rod 610, and the film thickness measurer 600 is mounted at the front end of the swing arm 620. The film thickness measurer 600 is configured to swing around the axis of the rotating shaft rod 610 by the rotation of the rotating shaft rod 610. Specifically, during the polishing of the substrate WF, the film thickness measurer 600 can swing along the radial direction of the substrate WF by the rotation of the rotating shaft rod 610. The film thickness measurer 600 is configured to swing to a position away from the substrate WF when the polishing pad 222 swings on the substrate WF, and to still swing on the substrate WF when the polishing pad 222 does not swing on the substrate WF. That is, the film thickness measurer 600 can swing on the substrate WF at a time when it does not interfere with the polishing pad 222 swinging on the substrate WF, and can always measure the film thickness profile of the substrate WF polished by the polishing pad 222. The film thickness measurer 600 can detect the polishing end point of the substrate WF when the measured film thickness profile of the substrate WF becomes a desired film thickness profile.

[0045] <Trimmer>

[0046] As Figure 1 and Figure 2 shown, the trimmer 500 is disposed on the path along which the polishing pads 222 and 242 rotate by the rotation of the swing shaft rod 210. The trimmer 500 is a member for shaping (trimming) the polishing pads 222 and 242 by firmly electro-depositing diamond particles or the like on the surface. The trimmer 500 is configured to rotate by a rotation driving mechanism such as a motor (not shown). Pure water can be supplied to the surface of the trimmer 500 from a nozzle (not shown). The substrate processing apparatus 1000 supplies pure water from the nozzle to the trimmer 500, rotates the trimmer 500, and rotates the polishing pads 222 and 242 to press against the trimmer 500 and swing relative to the trimmer 500. Thereby, the polishing pads 222 and 242 are trimmed by removing the polishing pads 222 and 242 by the trimmer 500.

[0047] <Pad Holder>

[0048] Figure 4 is a perspective view schematically showing a pad holder of an embodiment. Figure 5 is a cross-sectional view schematically showing a pad holder of an embodiment. Hereinafter, the configuration of the pad holder 226 will be described. However, the pad holder 246 has the same configuration.

[0049] As Figure 5 shown, the pad retainer 226 includes: a plate-shaped first retainer body 221-1 mounted on the lower end of the rotating shaft 224; and a plate-shaped second retainer body 221-2 provided below the first retainer body 221-1. The pad retainer 226 includes an airbag 223 sandwiched between the first retainer body 221-1 and the second retainer body 221-2. A flow path 224a communicating with the airbag 223 is formed in the rotating shaft 224 and the first retainer body 221-1. The multi-axis arm 200 can adjust the pressing force of the polishing pad 222 against the substrate WF by supplying gas to the airbag 223 from a fluid source (not shown) via the flow path 224a.

[0050] The pad retainer 226 (second retainer body 221-2) has: a discharge hole 221-2a formed in the central portion of the holding surface 221-2c for holding the polishing pad 222; and a discharge path 221-2b communicating from the discharge hole 221-2a to the outside of the pad retainer 226. The discharge path 221-2b is formed in the second retainer body 221-2 so as to communicate the discharge hole 221-2a with the side surface of the second retainer body 221-2.

[0051] Figure 6 is a plan view generally showing the second retainer body 221-2 of an embodiment. As Figure 6 shown, the discharge paths 221-2b extend radially from the discharge hole 221-2a and open at multiple locations (four locations in this embodiment) on the side surface of the second retainer body 221-2. Further, as Figure 6 shown, the discharge hole 221-2a is a circular hole, and the discharge paths 221-2b extend in the tangential direction of the discharge hole 221-2a when the second retainer body 221-2 is viewed from above and open at multiple locations on the side surface of the second retainer body 221-2. In addition, this embodiment shows an example in which four discharge paths 221-2b are formed, but the number of discharge paths 221-2b is arbitrary.

[0052] Figure 7 is a plan view generally showing a polishing pad of an embodiment. As Figure 5 and Figure 7 shown, the polishing pad 222 has a through hole 222b formed in the center of the polishing surface 222c in contact with the substrate WF. The through hole 222b has the same size and shape as the discharge hole 221-2a. The through hole 222b communicates with the discharge hole 221-2a. Grooves 222a communicating the through hole 222b with the side surface of the polishing pad 222 are formed in the polishing surface 222c of the polishing pad 222. As Figure 7 shown, the groove 222a includes a spiral groove communicating the through hole 222b with the side surface of the polishing pad 222.

[0053] The substrate processing apparatus 1000 of the present embodiment does not supply the polishing liquid to the substrate WF via the pad holder 226, but supplies the polishing liquid through the nozzle 248 disposed around the pad holder 226. Thus, since there is no need to provide a rotary joint, it is possible to suppress particles generated due to wear of the internal parts of the rotary joint from mixing with the polishing liquid between the polishing pad 222 and the substrate WF and damaging the polished surface of the substrate WF.

[0054] In addition, when supplying the polishing liquid around the pad holder 226, there is a problem of insufficient supply of the polishing liquid between the polishing surface of the polishing pad 222 and the polished surface of the substrate WF. In this regard, the substrate processing apparatus 1000 of the present embodiment can easily transport the polishing liquid from the outside of the polishing pad 222 toward the center by using the polishing pad 222 formed with the spiral groove 222a. At this time, when only using the polishing pad 222 formed with the spiral groove 222a, since air is concentrated at the center of the polishing pad 222 and the pressure increases, as a result, the supply of the polishing liquid to the center of the polishing pad 222 may be insufficient.

[0055] On the contrary, in the present embodiment, a through hole 222b is formed at the center of the polishing pad 222, and a discharge hole 221-2a communicating with the through hole 222b and a discharge path 221-2b communicating the discharge hole 221-2a with the outside of the pad holder 226 are formed in the second holder main body 221-2. Thus, the air concentrated at the center of the polishing pad 222 can be discharged to the outside of the pad holder 226 via the through hole 222b, the discharge hole 221-2a, and the discharge path 221-2b. Therefore, since the pressure increase at the center of the polishing pad 222 can be suppressed, the polishing liquid can be smoothly transported toward the center of the polishing pad 222.

[0056] In addition, since the discharge path 221-2b extends radially from the discharge hole 221-2a and centrifugal force acts on the discharge path 221-2b, the polishing liquid transported to the center of the polishing pad 222 can be discharged to the outside of the pad holder 226 via the through hole 222b, the discharge hole 221-2a, and the discharge path 221-2b. Here, the polishing liquid transported to the center of the polishing pad 222 by the spiral groove 222a spirally ascends in the discharge hole 221-2a. In this regard, as Figure 6As shown, since the discharge path 221-2b radially extends in the tangential direction of the discharge hole 221-2a, it is easy for the polishing liquid spirally rising in the discharge hole 221-2a to flow toward the discharge path 221-2b. As described above, by discharging the polishing liquid outside the polishing liquid discharge pad holder 226 by centrifugal force, the polishing liquid supplied to the periphery of the pad holder 226 can be more smoothly transported to the center of the polishing pad 222. As a result, since a sufficient amount of polishing liquid can be supplied between the substrate WF and the polishing pad 222, the polishing rate of the substrate WF can be increased.

[0057] In addition, as described above, the substrate processing apparatus 1000 of the present embodiment is configured to polish the substrate WF while swinging the pad holder 226 in such a manner that the polishing pad 222 is supported by the support member 300. The multi-axis arm 200 is configured to supply the polishing liquid from the nozzle 228 not only when the polishing pad 222 contacts the substrate WF but also when the polishing pad 222 contacts the support member 300. Since the polishing liquid supplied from the nozzle 228 when the polishing pad 222 contacts the support member 300 is transported to the center of the polishing pad 222 as described above, the state where the polishing pad 222 is filled with the polishing liquid not used for polishing the substrate WF is formed. Therefore, since the polishing process of the substrate WF is immediately performed when the polishing pad 222 contacts the substrate WF by swinging the pad holder 226, the polished surface of the substrate WF can be uniformly polished and the polishing rate can be increased.

[0058] In addition, the present embodiment shows an example in which the polishing pad 222 formed with the spiral groove 222a is mounted on the pad holder 226, but it is not limited thereto. The polishing pad 222 may be configured in such a manner that a through hole 222b communicating with the center of the polishing surface 222c and a groove on the side surface of the polishing pad 222 are formed on the polishing surface 222c, and the polishing liquid is transported to the center of the polishing pad 222.

[0059] Figure 9 is a cross-sectional view schematically showing a pad holder of an embodiment. Figure 10 is a top view of the pad holder Figure 9 shown when viewed from above. Hereinafter, in accordance with Figure 9 、 10 the configuration of the pad holder 226 of an embodiment will be described. However, the pad holder 246 may have the same configuration.

[0060] Figure 9 The pad holder 226 shown includes the same structure as the pad holder 226 Figure 5 shown. Figure 9In the illustrated embodiment, the substrate processing apparatus 1000 includes a polishing liquid recovery member 270. The polishing liquid recovery member 270 includes: an annular portion 272 disposed so as to surround the second holder body 221-2 of the pad holder 226; and an extension portion 274 extending radially outward from the annular portion 272. An annular polishing liquid recovery passage 276 for receiving the polishing liquid discharged from the discharge passage 221-2b is defined in the annular portion 272. Similarly, a polishing liquid recovery passage 278 is defined in the extension portion 274. The polishing liquid recovery passage 276 in the annular portion 272 communicates with the polishing liquid recovery passage 278, and the polishing liquid discharged from the discharge passage 221-2b is recovered through the polishing liquid recovery passage 276 and the polishing liquid recovery passage 278. The recovered polishing liquid is discharged outside the worktable 100 and discarded together with the polishing liquid dripping from the worktable 100. The recovered polishing liquid can also be reused after appropriate treatment such as removing residues.

[0061] The polishing liquid recovery member 270 is fixed to the first arm 220 so as not to contact the pad holder 226. Accordingly, the polishing liquid recovery member 270 does not rotate together with the pad holder 226, but swings together with the pad holder 226. However, the annular portion 272 of the polishing liquid recovery member 270 is preferably disposed close to the pad holder 226 in order to effectively recover the polishing liquid. In addition, when the polishing liquid recovery member 270 is provided around the pad holder 246, the polishing liquid recovery member 270 is fixed to the third arm 240.

[0062] <Flowchart>

[0063] Next, the steps of the substrate processing method of the present embodiment will be described. Figure 8 It is a flowchart of a substrate processing method of an embodiment. As Figure 8 shown, first, in the substrate processing method, a polishing pad 222 is mounted on the pad holder 226 (mounting step S100). The substrate processing method of the present embodiment is as Figure 7 shown, and the polishing pad 222 having a through hole 222b formed in the center of the polishing surface 222c and a spiral groove 222a connecting the through hole 222b and the side surface of the polishing pad 222 formed in the polishing surface 222c is used. In addition, the substrate processing method of the present embodiment is as Figure 5 shown, and the pad holder 226 having a discharge hole 221-2a formed in the center of the holding surface 221-2c and a discharge passage 221-2b connecting the discharge hole 221-2a to the outside of the pad holder 226 is used.

[0064] Next, the substrate processing method sets the substrate WF on the workbench 100 (setting step S110). Next, the substrate processing method supplies a polishing liquid from the nozzle 228 disposed around the pad holder 226 toward the polished surface of the substrate WF (supply step S120). The supply step S120 continues to supply the polishing liquid from the nozzle 228 during the following polishing process. Next, the substrate processing method rotates the pad holder 226 using the pad rotation mechanism 229 (rotation step S130). Next, the substrate processing method rotates the workbench 100 and presses the polishing pad 222 against the substrate WF using the lifting mechanism 227 and the airbag 223 (pressing step S140).

[0065] Next, the substrate processing method swings the pad holder 226 in the radial direction of the substrate using the rotation drive mechanism 212 (swing step S150). The swing step S150 swings the pad holder 226 between the substrate WF and the support member 300. Here, the above supply step S120 is configured to supply the polishing liquid on the swing path of the pad holder 226. In addition, the supply step S120 is configured to supply the polishing liquid to the polished surface of the substrate WF when the polishing pad 222 contacts the substrate WF, and through the swing step S150, supply the polishing liquid to the support member 300 when the polishing pad 222 swung to the outside of the workbench 100 is supported by the support member 300. The polishing process of the substrate WF is performed through the above steps.

[0066] Next, the substrate processing method measures the film thickness profile of the polished surface of the substrate WF using the film thickness measuring device 600 while polishing the substrate WF (film thickness measuring step S160). Next, the substrate processing method determines whether the film thickness profile measured by the film thickness measuring step S160 reaches the desired film thickness profile (determination step S170). When the substrate processing method determines that the desired film thickness profile has not been obtained (determination step S170, NO), it returns to the film thickness measuring step S160 and repeats the process. In addition, when the substrate processing method determines that the desired film thickness profile has been obtained (determination step S170, YES), the polishing process is terminated.

[0067] When the substrate processing method of the present embodiment is adopted, since the polishing liquid is supplied from the nozzle 248 disposed around the pad holder 226, a rotary joint does not need to be provided. As a result, since particles generated due to wear of the internal parts of the rotary joint can be suppressed from mixing between the polishing pad 222 and the substrate WF together with the polishing liquid, damage to the polished surface of the substrate WF can be prevented.

[0068] In addition, when the substrate processing method of the present embodiment is adopted, since the polishing pad 222 formed with the spiral groove 222a is used and the pad retainer 226 formed with the discharge hole 221-2a and the discharge path 221-2b is used, the gas concentrated at the center of the polishing pad 222 can be extracted to the outside of the pad retainer 226. Furthermore, since the polishing liquid transported to the center of the polishing pad 222 through the spiral groove 222a is discharged from the discharge path 221-2b by the centrifugal force generated by the rotation of the pad retainer 226, the polishing liquid can be sequentially transported to the center of the polishing pad 222. As a result, since a sufficient amount of polishing liquid can be supplied between the substrate WF and the polishing pad 222, the polishing rate of the substrate WF can be increased. When using Figure 9 , 10 the substrate processing apparatus 1000 shown, the polishing liquid discharged from the discharge path 221-2b can be recovered by the polishing liquid recovery member 270. Therefore, it is possible to prevent the polishing liquid used for polishing from being supplied again between the polishing pad 222 and the substrate WF, and the substrate WF can be polished with fresh polishing liquid.

[0069] As described above, some embodiments of the present invention have been described. However, the above-described embodiments of the invention are for easy understanding of the present invention and do not limit the present invention. The present invention can be changed and modified without departing from its gist, and the present invention naturally includes its equivalents. In addition, within the scope of at least partially solving the above problems or achieving at least part of the effects, the respective components described in the claims and the specification can be arbitrarily combined or omitted.

[0070] An embodiment of the present application discloses a substrate processing apparatus, including: a workbench for supporting a substrate; a pad retainer for holding a polishing pad for polishing the substrate supported by the workbench; a nozzle for supplying a polishing liquid to the periphery of the pad retainer; and a pad rotation mechanism for rotating the pad retainer. The pad retainer has: a discharge hole formed at the center of the holding surface for holding the polishing pad; and a discharge path communicating from the discharge hole to the outside of the pad retainer.

[0071] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, wherein the discharge path is formed in the pad retainer in such a manner that the discharge hole is communicated with the side surface of the pad retainer.

[0072] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, wherein the discharge path is formed in the pad retainer in such a manner that it extends radially from the discharge hole and opens at multiple locations on the side surface of the pad retainer.

[0073] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, wherein the discharge hole is a circular hole, and the discharge path is formed in the pad holder in such a manner that, when the pad holder is viewed from above, it extends in a tangential direction of the discharge hole and opens at multiple locations on the side surface of the pad holder.

[0074] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, wherein the pad holder is configured to hold a polishing pad having a through hole communicating with the discharge hole formed in a polishing surface that contacts a substrate supported by the worktable, and a groove communicating the through hole with a side surface of the polishing pad is formed in the polishing surface.

[0075] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, wherein the groove includes a spiral groove that communicates the through hole with a side surface of the polishing pad.

[0076] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, which further includes: a swing mechanism that swings the pad holder in a radial direction of the substrate; and a support member that supports the polishing pad swung outward of the worktable by the swing mechanism.

[0077] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, wherein the nozzle includes: a first nozzle disposed on a swing path of the pad holder; and a second nozzle disposed on the swing path of the pad holder on a side opposite to the first nozzle with the pad holder interposed therebetween.

[0078] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, wherein the support member includes: a first support member disposed on a swing path of the pad holder outside the worktable; and a second support member disposed on a swing path of the pad holder on a side opposite to the first support member with the worktable interposed therebetween.

[0079] Furthermore, an embodiment of the present application discloses a substrate processing apparatus, which includes a polishing liquid recovery member that recovers polishing liquid discharged from the discharge path.

[0080] The polishing liquid recovery member includes an annular portion configured to surround the pad holder.

[0081] Furthermore, an embodiment of the present application discloses a substrate processing method, which includes the following steps: a setting step of setting a substrate on a worktable; a supply step of supplying a polishing liquid from nozzles disposed around a pad retainer that holds a polishing pad and has a discharge hole and a discharge path, the discharge hole being formed at the center of a holding surface for holding the polishing pad, and the discharge path communicating from the discharge hole to the outside of the pad retainer; a rotation step of rotating the pad retainer; and a pressing step of pressing the polishing pad held by the pad retainer against the substrate.

[0082] Furthermore, an embodiment of the present application discloses a substrate processing method, which further includes a mounting step of mounting a polishing pad on the pad retainer, the polishing pad having a through hole communicating with the discharge hole formed on a polishing surface that contacts the substrate disposed on the worktable, and a groove that connects the through hole to the side surface of the polishing pad is formed on the polishing surface.

[0083] Furthermore, an embodiment of the present application discloses a substrate processing method, wherein the groove includes a spiral groove that connects the through hole to the side surface of the polishing pad.

[0084] Furthermore, an embodiment of the present application discloses a substrate processing method, which further includes a swinging step of swinging the polishing pad in the radial direction of the substrate, and the supply step includes a step of supplying the polishing liquid on a swinging path of the pad retainer.

[0085] Furthermore, an embodiment of the present application discloses a substrate processing method, wherein the supply step is configured to supply the polishing liquid when the polishing pad swung outward to the outside of the worktable by the swinging step is supported by a support member disposed around the worktable.

[0086] Furthermore, an embodiment of the present application discloses a substrate processing method, which includes a recovery step of recovering the polishing liquid discharged from the discharge path by a polishing liquid recovery member, the polishing liquid recovery member including an annular portion configured to surround the pad retainer.

[0087] Symbol Description

[0088] 100: Worktable

[0089] 200: Multi-axis arm

[0090] 221-1: First retainer body

[0091] 221-2: Second retainer body

[0092] 221-2a: Discharge hole

[0093] 221-2b: Discharge path

[0094] 221 - 2c: Holding surface

[0095] 222: Polishing pad

[0096] 222a: Groove

[0097] 222b: Through - hole

[0098] 222c: Polishing surface

[0099] 226: Pad retainer

[0100] 227: Lifting mechanism

[0101] 228: Nozzle

[0102] 228 - 1: First nozzle

[0103] 228 - 2: Second nozzle

[0104] 229: Pad rotation mechanism

[0105] 270: Abrasive liquid recovery component

[0106] 300: Support member

[0107] 300A: First support member

[0108] 300B: Second support member

[0109] 301a, 301b: Support surface

[0110] 1000: Substrate processing device

[0111] WF: Substrate

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A workbench for supporting a substrate; A pad retainer for retaining a polishing pad for polishing the substrate supported by the workbench; A nozzle for supplying a polishing liquid to the periphery of the pad retainer; And A pad rotation mechanism for rotating the pad retainer, The pad retainer has: a discharge hole formed at the center of the retaining surface for retaining the polishing pad; and a discharge path communicating from the discharge hole to the outside of the pad retainer.

2. The substrate processing apparatus according to claim 1, wherein The discharge path is formed in the pad retainer so as to communicate the discharge hole with the side surface of the pad retainer.

3. The substrate processing apparatus according to claim 2, wherein The discharge path is formed in the pad retainer so as to radially extend from the discharge hole and open at multiple locations on the side surface of the pad retainer.

4. The substrate processing apparatus according to claim 2, wherein The discharge hole is a circular hole, The discharge path is formed in the pad retainer in such a manner that when the pad retainer is viewed from above, it extends along the tangent direction of the discharge hole from the discharge hole and opens at multiple locations on the side surface of the pad retainer.

5. The substrate processing apparatus according to claim 1, wherein The pad retainer is configured to retain a polishing pad having a through hole communicating with the discharge hole formed in a polishing surface in contact with the substrate supported by the workbench, and a groove communicating the through hole with the side surface of the polishing pad is formed in the polishing surface.

6. The substrate processing apparatus according to claim 5, wherein The groove includes a spiral groove communicating the through hole with the side surface of the polishing pad.

7. The substrate processing apparatus according to claim 1, wherein, Further comprising: A swing mechanism for swinging the pad retainer in the radial direction of the substrate; and A support member for supporting the polishing pad swung outward of the workbench by the swing mechanism.

8. The substrate processing apparatus according to claim 7, wherein The nozzle includes: a first nozzle disposed on the swing path of the pad retainer; and a second nozzle disposed on the swing path of the pad retainer on the opposite side of the pad retainer across the pad retainer.

9. The substrate processing apparatus according to claim 7, wherein The support member includes: a first support member disposed on the swing path of the pad retainer outside the workbench; and a second support member disposed on the swing path of the pad retainer on the opposite side of the workbench across the workbench.

10. The substrate processing apparatus according to claim 1, wherein A polishing liquid recovery member for recovering the polishing liquid discharged from the discharge path is included, The polishing liquid recovery member includes an annular portion configured to surround the pad retainer.

11. A substrate processing method, characterized in that, Comprising the following steps: A setting step of setting a substrate on the workbench; A supply step of supplying a polishing liquid from a nozzle disposed around a pad holder for holding a polishing pad, the pad holder having a discharge hole formed in a central portion of a holding surface for holding the polishing pad and a discharge path communicating from the discharge hole to the outside of the pad holder; A rotation step of rotating the pad holder; and A pressing step of pressing the polishing pad held by the pad holder against the substrate.

12. The substrate processing method according to claim 11, wherein It further includes a mounting step of mounting a polishing pad on the pad holder, the polishing pad having a through hole communicating with the discharge hole formed in a polishing surface in contact with the substrate provided on the worktable, and a groove communicating the through hole with a side surface of the polishing pad formed in the polishing surface.

13. The substrate processing method according to claim 12, wherein The groove includes a spiral groove communicating the through hole with a side surface of the polishing pad.

14. The substrate processing method according to claim 11, wherein It further includes a swinging step of swinging the polishing pad in a radial direction of the substrate, The supply step includes a step of supplying a polishing liquid on a swinging path of the pad holder.

15. The substrate processing method according to claim 14, wherein The supply step is configured to supply a polishing liquid when the polishing pad swung outward of the worktable by the swinging step is supported by a support member disposed around the worktable.

16. The substrate processing method according to claim 11, wherein It includes a recovery step of recovering the polishing liquid discharged from the discharge path by a polishing liquid recovery member, the polishing liquid recovery member including an annular portion configured to surround the pad holder.

Images