A semiconductor laser device of a leaky waveguide structure

Abstract

This invention discloses a semiconductor laser device with a leaky waveguide structure, which, from bottom to top, includes a substrate, a buffer layer, and (Al) x1 Ga 1‑x1 ) y1 In 1‑y1 P-lower confinement layer, (Al) x2 Ga 1‑x2 ) y2 In 1‑y2 P-mode extension layer, (Al) x3 Ga 1‑x3 ) y3 In 1‑y3 P-lower confinement layer, (Al) x4 Ga 1‑x4 ) y4 In 1‑y4 P lower barrier layer, (Al) x5 Ga 1‑x5 ) y5 In 1‑y5 P-waveguide layer, GaAs x6 P 1‑x6 Quantum well, (Al) x7 Ga 1‑x7 ) y6 In 1‑y6 P upper waveguide layer, (Al) x8 Ga 1‑x8 ) y7 In 1‑y7 P upper base layer, (Al) x9 Ga 1‑x9 ) y8 In 1‑y8 P-confinement layer, Ga 0.5 In 0.5 The laser employs an asymmetric large cavity structure design, which can compress the optical field, reduce losses, and increase output power.

Description

Technical Field

[0001] This invention relates to the field of semiconductor lasers, and more specifically to a semiconductor laser device with a leaky waveguide structure. Background Technology

[0002] The information disclosed in the background section of this invention is intended only to enhance the understanding of the overall background of the invention and is not necessarily to be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art.

[0003] 808nm semiconductor lasers can be used as pump sources for Nd:YAG lasers to achieve 1064nm laser output, applicable to industries such as laser welding, cutting, marking, and surface treatment. They also have wide applications in radar, fuses, laser processing, printing, optical storage, optical communication, and laser medicine. Brightness, efficiency, and reliability are key performance indicators for semiconductor lasers. Conventional AlGa(In)As / AlGaAs materials, due to the presence of Al in the active region, tend to grow high-density oxides, forming deep-level defects and resulting in dark-line defects, affecting the long-term reliability of the laser. Aluminum-free materials exhibit slow oxidation, low surface recombination rates, high cavity surface catastrophe damage thresholds, and slow internal degradation, contributing to long-term reliable operation.

[0004] Chinese patent CN100574027C discloses an aluminum-free, high-power quantum well laser with an asymmetric active region. This design increases the optical confinement factor in the P-type material region, reduces light leakage into the P-type material region, decreases carrier absorption loss in the highly doped region, and improves the laser's operating efficiency. Simultaneously, this structure enhances the confinement of carriers in the active region and reduces carrier leakage, which is beneficial for reducing the threshold current. However, the quantum well uses a GaInAsP quaternary composite material, which suffers from significant photon scattering loss and presents significant challenges in material growth.

[0005] The literature *Semiconductor Lasers and Applications*, Vol 10017, 2016, Pg: 100170M1-M7, points out that using an asymmetric structure can improve the optical confinement factor and suppress carrier overflow. Employing a mode spreading layer can reduce the vertical divergence angle, increase the maximum output power, and improve optical power density and brightness. However, the waveguide layer, made of GaInP, has a small bandgap difference with the quantum well, resulting in poor carrier suppression capability.

[0006] The literature PROCEEDINGS OF SPIE, Vol 12403, 2023, Pg: 124030F1-F12, points out that using tensile strained GaAsP as a quantum well, compared to AlGaInAs quantum wells, results in lower threshold current, higher gain, and better high-temperature stability, which can effectively improve output power and photoelectric conversion efficiency. However, using high-Al content AlGaAs in the confinement layer and waveguide layer leads to Al composition thermal effects, which limit the maximum output power.

[0007] The literature IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 18(15), 2006, Pg: 1582-1584 points out that inserting high-Al composition materials at the interface between the confinement layer and the waveguide layer forms a double-barrier confinement structure, which causes competition between guiding and anti-guiding modes, resulting in a non-Gaussian wide-tail effect in the optical field, thereby reducing the divergence angle. However, this structure is mainly used in AlGaAs narrow-ridge lasers, with relatively low output power. Summary of the Invention

[0008] This invention provides a semiconductor laser device with a leaky waveguide structure. This laser employs an asymmetric large optical cavity structure design, which can compress the optical field, reduce losses, and increase output power. Specifically, this invention discloses the following technical solution.

[0009] First, this invention discloses a semiconductor laser device with a leaky waveguide structure, which, from bottom to top, comprises a substrate, a buffer layer, and (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer, (Al) x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer, (Al) x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer, (Al) x4 Ga 1-x4 ) y4 In 1-y4 P lower barrier layer, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer, GaAs x6 P 1-x6 Quantum well, (Al) x7 Ga 1-x7 ) y6 In 1-y6 P upper waveguide layer, (Al) x8 Ga1-x8 ) y7 In 1-y7 P upper base, (Al) x9 Ga 1-x9 ) y8 In 1-y8 P-confinement layer, Ga 0.5 In 0.5 P consists of a transition layer and a cap layer. The following parameters are defined: 0.1≤x1≤0.5, 0.4≤y1≤0.6; 0≤x2≤0.4, 0.4≤y2≤0.6; 0.1≤x3≤0.5, 0.4≤y3≤0.6; 0.2≤x4≤0.8, 0.4≤y4≤0.6; 0≤x5≤0.2, 0.4≤y5≤0.6; 0.85≤x6≤0.95; 0≤x7≤0.2, 0.4≤y6≤0.6; 0.2≤x8≤0.8, 0.4≤y7≤0.6; 0.3≤x9≤0.7, 0.4≤y8≤0.6; and x9>x1, x9>x3, x7≥x5, thus forming an asymmetric structure. The total thickness of the upper and lower waveguide layers is ≥1μm to form a large optical cavity structure design. The x2≤x1 and x2≤x3 indicate that the Al component in the mode extension layer is lower than that in the lower limiting layer.

[0010] Furthermore, the (Al) x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the P-type confinement layer is 0.5-1.5 μm, with a Si atom doping concentration of 3E17-1E18 atoms / cm. 3 .

[0011] Furthermore, the (Al) x2 Ga 1-x2 ) y2 In 1-y2 The thickness of the P-mode extended layer is 0.1-0.5 μm, with a Si atom doping concentration of 3E17-1E18 atoms / cm². 3 In this invention, the Al component in the mode extension layer is lower than that in the lower confinement layer, and a low Al component is inserted into the lower confinement layer. This concentrates the light field on the N-side in the mode extension layer, expands the near-field light spot, reduces the vertical divergence angle, and helps to improve the optical power density and brightness.

[0012] Furthermore, the (Al) x3 Ga 1-x3 ) y3 In 1-y3 The thickness of the P-type confinement layer is 0.1-0.5 μm, with a Si atom doping concentration of 3E17-1E18 atoms / cm. 3 The (Al) x3 Ga1-x3 ) y3 In 1-y3 P-lower confinement layer and (Al) x1 Ga 1-x1 ) y1 In 1-y1 The Al composition in the lower confinement layer is consistent, thus ensuring the continuity of the optical field.

[0013] Furthermore, the (Al) x4 Ga 1-x4 ) y4 In 1-y4 The thickness of the P-type barrier layer is 2-15 nm, with a Si atom doping concentration of 3E17-1E18 atoms / cm. 3 The present invention is described in (Al). x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer and (Al) x5 Ga 1-x5 ) y5 In 1- y5 A lower barrier layer with a high Al composition is inserted at the interface between the P-waveguide layers to induce guidance / anti-guidance mode competition, thereby reducing the divergence angle.

[0014] Furthermore, the (Al) x5 Ga 1-x5 ) y5 In 1-y5 The thickness of the waveguide layer under P is 0.5-1.5 μm, with a Si atom doping concentration of 3E16-1E17 atoms / cm. 3 .

[0015] Furthermore, the GaAs x6 P 1-x6 The thickness of the quantum well is 5-10 nm. In this invention, the quantum well has a thickness of 0.85 ≤ x 6 ≤ 0.95, which causes the quantum well to be subjected to tensile stress. This strained quantum well increases the number of light holes and the refractive index difference, which helps to reduce the threshold current, improve the gain, and enhance the photoelectric conversion efficiency. Furthermore, the GaAs... x6 P 1-x6 The other atoms present in the quantum well are unintentional dopants.

[0016] Furthermore, the (Al) x7 Ga 1-x7 ) y6 In 1-y6The thickness of the upper waveguide layer is 0.2-0.7 μm. In this invention, the total thickness of the upper and lower waveguide layers is ≥1 μm, thus forming a large optical cavity structure, which helps to improve the cavity surface damage threshold and increase the maximum output power. Simultaneously, the upper waveguide layer is made of AlGaInP containing Al, which helps to increase the bandgap difference with the quantum well, suppress carrier overflow, and improve the high-temperature operating stability of the laser. Furthermore, the other atoms present in the upper waveguide layer are unintentionally doped.

[0017] Furthermore, the (Al) x8 Ga 1-x8 ) y7 In 1-y7 The thickness of the barrier layer on P is 2-15 nm, with the doping concentration of Mg or Zn being 5E17-1E18 atoms / cm². 3 The present invention inserts a high Al composition upper barrier layer at the interface between the confinement layer and the upper waveguide layer to induce guidance / anti-guidance mode competition and reduce the divergence angle.

[0018] Furthermore, the (Al) x9 Ga 1-x9 ) y8 In 1-y8 The thickness of the confinement layer on P is 0.5-1.5 μm, with a doping concentration of Mg or Zn of 5E17-1E18 atoms / cm. 3 In this invention, the Al component in the upper confinement layer is greater than (Al... x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer and (Al) x3 Ga 1-x3 ) y3 In 1-y3 The asymmetric structure formed by the Al component in the P-confinement layer compresses the light field and shifts it towards the N-side, reducing absorption loss and improving photoelectric conversion efficiency.

[0019] Furthermore, the Ga 0.5 In 0.5 The thickness of the transition layer on P is 20-40 nm, with a doping concentration of Mg or Zn of 1.5E18-3E18 atoms / cm². 3 The upper transition layer is used to reduce the bandgap difference, reduce voltage, and improve carrier transport efficiency.

[0020] Furthermore, the thickness of the cap layer is 0.1-0.5 μm, wherein the doping concentration of C or Zn is 4E19-1E20 atoms / cm². 3 .

[0021] Furthermore, the thickness of the buffer layer is 0.1-0.3 μm, wherein the Si atom doping concentration is 2E18-5E18 atoms / cm². 3 .

[0022] Compared with the prior art, the present invention has at least the following beneficial effects:

[0023] (1) This invention utilizes the fact that the Al component in the upper confinement layer is greater than (Al x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer and (Al) x3 Ga 1-x3 ) y3 In 1-y3 The asymmetric structure formed by the P-type confinement layer compresses the light field and shifts it towards the N-type side, reducing absorption loss and improving photoelectric conversion efficiency.

[0024] (2) The present invention utilizes the fact that the thickness of the upper waveguide layer and the lower waveguide layer are both ≥1μm, thereby forming a large optical cavity structure to improve the cavity surface damage threshold and thus improve the maximum output power.

[0025] (3) The Al component in the mode extension layer of the present invention is lower than (Al x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer and (Al) x3 Ga 1-x3 ) y3 In 1-y3 A lower confinement layer is added to the P-side, and a low Al component is inserted into this lower confinement layer, thereby concentrating the light field on the N-side in the mode extension layer, expanding the near-field light spot, reducing the vertical divergence angle, which helps to improve the light power density and increase the brightness.

[0026] (4) The present invention is described in (Al) x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer and (Al) x5 Ga 1-x5 ) y5 In 1-y5 A lower barrier layer with a high Al composition is inserted at the interface between the lower waveguide layers and the upper barrier layer with a high Al composition, thereby causing guidance / anti-guidance mode competition, which reduces the divergence angle and increases brightness.

[0027] (5) The quantum well of the present invention is subjected to tensile stress. This strained quantum well increases the number of light holes and the refractive index difference, which helps to reduce the threshold current, increase the gain, and improve the photoelectric conversion efficiency. Attached Figure Description

[0028] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an improper limitation of the invention.

[0029] Figure 1 This is a schematic diagram of the semiconductor laser device with the improved leaky waveguide structure according to an embodiment of the present invention.

[0030] Figure 2 A schematic diagram of the structure of the semiconductor laser device before improvement.

[0031] The reference numerals in the above figures represent: 1-substrate, 2-buffer layer, 3-(Al) x1 Ga 1-x1 ) y1 In 1-y1 P-confinement layer, 4-(Al) x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer, 5-(Al) x3 Ga 1-x3 ) y3 In 1-y3 P-restricted layer, 6-(Al) x4 Ga 1-x4 ) y4 In 1-y4 P-lower barrier layer, 7-(Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer, 8-GaAs x6 P 1-x6 Quantum trap, 9-(Al) x7 Ga 1-x7 ) y6 In 1-y6 P-waveguide layer, 10-(Al) x8 Ga 1-x8 ) y7 In 1-y7 P upper barrier layer, 11-(Al) x9 Ga 1-x9 ) y8 In 1-y8 P-confinement layer, 12-Ga 0.5 In 0.5 P-transition layer, 13-cap layer. Detailed Implementation

[0032] It should be noted that the following detailed description is illustrative and intended to provide further explanation of the invention. Unless otherwise specified, all technical and scientific terms used in this invention have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0033] For ease of description, the terms "up," "down," "left," and "right" appearing in this invention only indicate that they correspond to the up, down, left, and right directions in the accompanying drawings. They do not limit the structure and are merely used to facilitate the description of the invention and to simplify the description. They do not indicate or imply that the device or component referred to needs to have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, any methods and materials similar to or equivalent to those described can be applied to the methods of this invention.

[0034] Example 1

[0035] A semiconductor laser device with a leaky waveguide structure, reference Figure 1 It comprises, from bottom to top, a substrate 1, a buffer layer 2, and (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3, (Al) x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer 4, (Al) x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer 5, (Al) x4 Ga 1-x4 ) y4 In 1-y4 P lower barrier layer 6, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer 7, GaAs x6 P 1-x6 Quantum well 8, (Al) x7 Ga 1-x7 ) y6 In 1-y6 P upper waveguide layer 9, (Al) x8 Ga 1-x8 ) y7 In 1-y7 P upper base layer 10, (Al) x9 Ga 1-x9 ) y8 In 1-y8 P upper confinement layer 11, Ga 0.5 In 0.5P is a transition layer 12 and a cap layer 13.

[0036] Specifically, the fabrication of the semiconductor laser device with the leaky waveguide structure includes the following steps:

[0037] S1, place the GaAs substrate 1 in the growth chamber of the MOCVD equipment, heat the H2 environment to 720°C for 10 min, and introduce AsH3 to perform surface heat treatment on the GaAs substrate 1.

[0038] S2, the temperature of the growth chamber is slowly reduced to 660℃ at a rate of 10℃ / min, and TMGa and AsH3 are continuously introduced to grow a GaAs buffer layer 2 with a thickness of 0.2μm on the GaAs substrate 1, wherein the Si atom doping concentration is 2E18 atoms / cm³. 3 The GaAs buffer layer 2 helps prevent defects from spreading from the substrate into the confinement layer, provides a fresh growth interface, and improves the quality of material growth.

[0039] S3: Maintain the growth chamber temperature at 660℃, introduce PH3, and stop the growth by stopping the group V source (100% AsH3) and group III source (TMGa) for 20 seconds to deplete the As atoms in the reaction chamber.

[0040] S4, maintain the growth chamber temperature at 660℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 1μm thick (Al) substrate on the GaAs buffer layer 2. x1 Ga 1-x1 ) y1 In 1-y1 P-level confinement layer 3, wherein: x1 = 0.2, y1 = 0.5, and the Si atom doping concentration is 6E17 atoms / cm³. 3 The doping source is Si2H6.

[0041] S5, maintain the growth chamber temperature at 660℃, and introduce TMAl, TMIn, TMGa, and PH3. x1 Ga 1-x1 ) y1 In 1-y1 A 0.2 μm thick (Al) layer is grown on the lower confinement layer 3. x2 Ga 1-x2 ) y2 In 1-y2 P-mode extended layer 4. Where: x2 = 0, y2 = 0.5, Si atom doping concentration is 6E17 atoms / cm³. 3 The doping source is Si2H6.

[0042] S6, maintain the growth chamber temperature at 660℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 0.3μm thick (Al) layer on the pattern extension layer 4. x3 Ga 1-x3 ) y3 In 1-y3 P-level confinement layer 5. Wherein: x3 = 0.2, y3 = 0.5, and the Si atom doping concentration is 6E17 atoms / cm³. 3 The doping source is Si₂H₆. The (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3 and (Al) x3 Ga 1-x3 ) y3 In 1-y3 The Al component content is consistent in the lower confinement layer 5 to ensure the continuity of the light field.

[0043] S7, maintain the growth chamber temperature at 660℃, and introduce TMAl, TMIn, TMGa, and PH3. x3 Ga 1-x3 ) y3 In 1-y3 A 5nm thick Al layer is grown on the lower confinement layer 5. x4 Ga 1-x4 ) y4 In 1-y4 P is the lower barrier layer 6. Where: x4 = 0.7, y4 = 0.5, and the Si atom doping concentration is 6E17 atoms / cm³. 3 The doping source is Si2H6.

[0044] S8, the growth chamber temperature is maintained at 660℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 0.9 μm thick (Al) layer on the lower barrier layer. x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer 7. Where: x5 = 0, y5 = 0.5, this lower waveguide layer 7 is adjacent to the 0.6 μm doped Si atoms of the lower confinement layer 5, and the doping concentration is 5E16 atoms / cm. 3 .

[0045] S9. Maintain the growth chamber temperature at 660℃, and introduce TMGa, AsH3, and PH3 to grow a 7nm thick GaAs layer on the lower waveguide layer 7. x6 P 1-x6 Quantum well 8, where x6 = 0.91.

[0046] S10, the growth chamber temperature is maintained at 660℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 0.4 μm thick (Al) core on the quantum well 8. x7 Ga 1-x7 ) y6 In 1-y6 The upper waveguide layer 9 has x7 = 0.05 and y6 = 0.5. The total thickness of the upper waveguide layer 9 and the lower waveguide layer 7 is 1 μm, thus forming a large optical cavity structure.

[0047] S11, maintain the growth chamber temperature at 660℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 5nm thick Al-based growth layer on the upper waveguide layer 9. x8 Ga 1-x8 ) y7 In 1-y7 The P-layer has a 10-layer barrier, where x8 = 0.7, y7 = 0.5, and the Mg doping concentration is 6E17 atoms / cm³. 3 The doping source is Cp2Mg.

[0048] S12, the growth chamber temperature is maintained at 660℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 0.9 μm thick (Al) layer on the upper barrier layer 10. x9 Ga 1-x9 ) y8 In 1-y8 P is confinement layer 11. Where: x9 = 0.4, y8 = 0.5, Mg doping concentration is 6E17 atoms / cm³. 3 The doping source is Cp2Mg.

[0049] S13, maintain the growth chamber temperature at 660°C, and continue to introduce TMGa, TMIn, and PH3 to grow a 25nm thick Ga layer on the upper confinement layer 11. 0.5 In 0.5 The transition layer 12 on P contains a Mg doping concentration of 2.5E18 atoms / cm³. 3 The doping source is Cp2Mg.

[0050] S14, the temperature of the growth chamber is reduced to 540℃ at a cooling rate of 20℃ / min, and TMGa and AsH3 are continuously introduced to grow a GaAs cap layer 13 with a thickness of 0.4μm on the upper transition layer 12, wherein the C element doping concentration is 5E19 atoms / cm³. 3 The doping source is CBr4.

[0051] Example 2

[0052] A semiconductor laser device with a leaky waveguide structure, reference Figure 1 It comprises, from bottom to top, a substrate 1, a buffer layer 2, and (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3, (Al) x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer 4, (Al) x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer 5, (Al) x4 Ga 1-x4 ) y4 In 1-y4 P lower barrier layer 6, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer 7, GaAs x6 P 1-x6 Quantum well 8, (Al) x7 Ga 1-x7 ) y6 In 1-y6 P upper waveguide layer 9, (Al) x8 Ga 1-x8 ) y7 In 1-y7 P upper base layer 10, (Al) x9 Ga 1-x9 ) y8 In 1-y8 P upper confinement layer 11, Ga 0.5 In 0.5 P is a transition layer 12 and a cap layer 13.

[0053] Specifically, the fabrication of the semiconductor laser device with the leaky waveguide structure includes the following steps:

[0054] S1, place GaAs substrate 1 in the growth chamber of MOCVD equipment, heat the H2 environment to 730°C for 10 min, and introduce AsH3 to perform surface heat treatment on GaAs substrate 1.

[0055] S2, the temperature of the growth chamber is slowly reduced to 670℃ at a cooling rate of 10℃ / min, and TMGa and AsH3 are continuously introduced to grow a GaAs buffer layer 2 with a thickness of 0.3μm on the GaAs substrate 1, wherein the Si atom doping concentration is 5E18 atoms / cm³. 3 The GaAs buffer layer 2 helps prevent defects from spreading from the substrate into the confinement layer, provides a fresh growth interface, and improves the quality of material growth.

[0056] S3: Maintain the growth chamber temperature at 670℃, introduce PH3, and stop the growth by stopping the group V source (100% AsH3) and group III source (TMGa) for 30 seconds, thus depleting the As atoms in the reaction chamber.

[0057] S4, maintain the growth chamber temperature at 670℃, introduce TMAl, TMIn, TMGa and PH3, and grow (Al) with a thickness of 0.5 μm on the GaAs buffer layer 2. x1 Ga 1-x1 ) y1 In 1-y1 P-level confinement layer 3, wherein: x1 = 0.1, y1 = 0.6, and the Si atom doping concentration is 3E17 atoms / cm³. 3 The doping source is Si2H6.

[0058] S5, maintain the growth chamber temperature at 670℃, and introduce TMAl, TMIn, TMGa, and PH3. x1 Ga 1-x1 ) y1 In 1-y1 A 0.1 μm thick (Al) layer is grown on the lower confinement layer 3. x2 Ga 1-x2 ) y2 In 1-y2 P-mode extended layer 4. Where: x2 = 0, y2 = 0.6, Si atom doping concentration is 3E17 atoms / cm³. 3 The doping source is Si2H6.

[0059] S6, maintain the growth chamber temperature at 670℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 0.1μm thick (Al) layer on the pattern extension layer 4. x3 Ga 1-x3 ) y3 In 1-y3 P-level confinement layer 5. Wherein: x3 = 0.1, y3 = 0.6, and the Si atom doping concentration is 3E17 atoms / cm³. 3 The doping source is Si₂H₆. The (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3 and (Al) x3 Ga 1-x3 ) y3 In 1-y3 The Al component content is consistent in the lower confinement layer 5 to ensure the continuity of the light field.

[0060] S7, maintain the growth chamber temperature at 670℃, and introduce TMAl, TMIn, TMGa, and PH3. x3 Ga 1-x3 ) y3 In 1-y3 A 2nm thick Al layer is grown on the lower confinement layer 5. x4 Ga 1-x4 ) y4 In 1-y4 P-bottom barrier layer 6. Where: x4 = 0.2, y4 = 0.6, Si atom doping concentration is 3E17 atoms / cm. 3 The doping source is Si2H6.

[0061] S8, the growth chamber temperature is maintained at 670℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 0.5 μm thick (Al) layer on the lower barrier layer. x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer 7. Where: x5 = 0, y5 = 0.6, this lower waveguide layer 7 is close to the 0.2 μm doped Si atoms of the lower confinement layer 5, and the doping concentration is 3E16 atoms / cm. 3 .

[0062] S9. Maintain the growth chamber temperature at 670℃, and introduce TMGa, AsH3, and PH3 to grow a 5nm thick GaAs layer on the lower waveguide layer 7. x6 P 1-x6 Quantum well 8, where x6 = 0.95.

[0063] S10, the growth chamber temperature is maintained at 670℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 0.7 μm thick (Al) core on the quantum well 8. x7 Ga 1-x7 ) y6 In 1-y6 The upper waveguide layer 9 has x7 = 0 and y6 = 0.6. The total thickness of the upper waveguide layer 9 and the lower waveguide layer 7 is greater than 1 μm, thus forming a large optical cavity structure.

[0064] S11, maintain the growth chamber temperature at 670℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 2nm thick Al-based growth layer on the upper waveguide layer 9. x8 Ga 1-x8 ) y7 In 1-y7 The P-layer has a 10-layer barrier, where x8 = 0.5, y7 = 0.6, and the Mg doping concentration is 5E17 atoms / cm³. 3 The doping source is Cp2Mg.

[0065] S12, the growth chamber temperature is maintained at 670℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 0.5 μm thick (Al) layer on the upper barrier layer 10. x9 Ga 1-x9 ) y8 In 1-y8 P is confinement layer 11. Where: x9 = 0.3, y8 = 0.4, Mg doping concentration is 5E17 atoms / cm³. 3 The doping source is Cp2Mg.

[0066] S13, maintain the growth chamber temperature at 670°C, and continue to introduce TMGa, TMIn, and PH3 to grow a 20nm thick Ga layer on the upper confinement layer 11. 0.5 In 0.5 The transition layer 12 on P contains a Mg doping concentration of 1.5E18 atoms / cm³. 3 The doping source is Cp2Mg.

[0067] S14, the temperature of the growth chamber is reduced to 550℃ at a cooling rate of 30℃ / min, and TMGa and AsH3 are continuously introduced to grow a GaAs cap layer 13 with a thickness of 0.1μm on the upper transition layer 12, wherein the C element doping concentration is 4E19 atoms / cm³. 3 The doping source is CBr4.

[0068] Example 3

[0069] A semiconductor laser device with a leaky waveguide structure, reference Figure 1 It comprises, from bottom to top, a substrate 1, a buffer layer 2, and (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3, (Al) x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer 4, (Al) x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer 5, (Al) x4 Ga 1-x4 ) y4 In 1-y4 P lower barrier layer 6, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer 7, GaAs x6 P1-x6 Quantum well 8, (Al) x7 Ga 1-x7 ) y6 In 1-y6 P upper waveguide layer 9, (Al) x8 Ga 1-x8 ) y7 In 1-y7 P upper base layer 10, (Al) x9 Ga 1-x9 ) y8 In 1-y8 P upper confinement layer 11, Ga 0.5 In 0.5 P is a transition layer 12 and a cap layer 13.

[0070] Specifically, the fabrication of the semiconductor laser device with the leaky waveguide structure includes the following steps:

[0071] S1, place GaAs substrate 1 in the growth chamber of MOCVD equipment, heat the H2 environment to 710°C for 10 min, and introduce AsH3 to perform surface heat treatment on GaAs substrate 1.

[0072] S2, the temperature of the growth chamber is slowly reduced to 650℃ at a rate of 30℃ / min, and TMGa and AsH3 are continuously introduced to grow a GaAs buffer layer 2 with a thickness of 0.1μm on the GaAs substrate 1, wherein the Si atom doping concentration is 1E18 atoms / cm³. 3 The GaAs buffer layer 2 helps prevent defects from spreading from the substrate into the confinement layer, provides a fresh growth interface, and improves the quality of material growth.

[0073] S3: Maintain the growth chamber temperature at 650℃, introduce PH3, and stop the growth by stopping the group V source (100% AsH3) and group III source (TMGa) for 3 seconds, thus depleting the As atoms in the reaction chamber.

[0074] S4, maintain the growth chamber temperature at 650℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 1.5μm thick (Al) substrate on the GaAs buffer layer 2. x1 Ga 1-x1 ) y1 In 1-y1 P-level confinement layer 3, wherein: x1 = 0.5, y1 = 0.4, and the Si atom doping concentration is 1E18 atoms / cm³. 3 The doping source is Si2H6.

[0075] S5, maintain the growth chamber temperature at 650℃, and introduce TMAl, TMIn, TMGa, and PH3. x1Ga 1-x1 ) y1 In 1-y1 A 0.5 μm thick (Al) layer is grown on the lower confinement layer 3. x2 Ga 1-x2 ) y2 In 1-y2 P-mode extended layer 4. Where: x2 = 0.4, y2 = 0.4, Si atom doping concentration is 1E18 atoms / cm³. 3 The doping source is Si2H6.

[0076] S6, maintain the growth chamber temperature at 650℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 0.5μm thick (Al) layer on the pattern extension layer 4. x3 Ga 1-x3 ) y3 In 1-y3 P-level confinement layer 5. Wherein: x3 = 0.5, y3 = 0.4, and the Si atom doping concentration is 1E18 atoms / cm³. 3 The doping source is Si₂H₆. The (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3 and (Al) x3 Ga 1-x3 ) y3 In 1-y3 The Al component content is consistent in the lower confinement layer 5 to ensure the continuity of the light field.

[0077] S7, maintain the growth chamber temperature at 650℃, and introduce TMAl, TMIn, TMGa, and PH3. x3 Ga 1-x3 ) y3 In 1-y3 A 15nm thick Al layer is grown on the lower confinement layer 5. x4 Ga 1-x4 ) y4 In 1-y4 P-bottom barrier layer 6. Where: x4 = 0.8, y4 = 0.4, Si atom doping concentration is 1E18 atoms / cm. 3 The doping source is Si2H6.

[0078] S8, the growth chamber temperature is maintained at 650℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 1.5 μm thick (Al) layer on the lower barrier layer. x5 Ga 1-x5 ) y5 In 1-y5Lower waveguide layer 7. Where x5 = 0.2, y5 = 0.4, this lower waveguide layer 7 is adjacent to the lower confinement layer 5 at a 1 μm doped Si atom density of 1E17 atoms / cm². 3 .

[0079] S9. Maintain the growth chamber temperature at 650℃ and introduce TMGa, AsH3, and PH3 to grow a 10nm thick GaAs layer on the lower waveguide layer 7. x6 P 1-x6 Quantum well 8, where x6 = 0.85.

[0080] S10, the growth chamber temperature is maintained at 650℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 0.2 μm thick (Al) core on the quantum well 8. x7 Ga 1-x7 ) y6 In 1-y6 The upper waveguide layer 9 has x7 = 0.2 and y6 = 0.4. The total thickness of the upper waveguide layer 9 and the lower waveguide layer 7 is greater than 1 μm, thus forming a large optical cavity structure.

[0081] S11, maintain the growth chamber temperature at 650℃, introduce TMAl, TMIn, TMGa and PH3, and grow a 15nm thick Al-based growth layer on the upper waveguide layer 9. x8 Ga 1-x8 ) y7 In 1-y7 The P-layer has a 10-layer barrier, where x8 = 0.8, y7 = 0.4, and the Mg doping concentration is 1E18 atoms / cm³. 3 The doping source is Cp2Mg.

[0082] S12, the growth chamber temperature is maintained at 650℃, and TMAl, TMIn, TMGa and PH3 are introduced to grow a 1.5 μm thick (Al) layer on the upper barrier layer 10. x9 Ga 1-x9 ) y8 In 1-y8 P is confinement layer 11. Where: x9 = 0.7, y8 = 0.4, Mg doping concentration is 1E18 atoms / cm³. 3 The doping source is Cp2Mg.

[0083] S13, maintain the growth chamber temperature at 650°C, and continue to introduce TMGa, TMIn, and PH3 to grow a 40nm thick Ga layer on the upper confinement layer 11. 0.5 In 0.5 P is a transition layer 12, in which the Mg element doping concentration is 3E18 atoms / cm. 3 The doping source is Cp2Mg.

[0084] S14, the temperature of the growth chamber is reduced to 550℃ at a cooling rate of 40℃ / min, and TMGa and AsH3 are continuously introduced to grow a GaAs cap layer 13 with a thickness of 0.5μm on the upper transition layer 12, wherein the C element doping concentration is 1E20 atoms / cm³. 3 The doping source is CBr4.

[0085] Example 4

[0086] A semiconductor laser device, reference Figure 2 It comprises, from bottom to top, a substrate 1, a buffer layer 2, and (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer 7, GaAs x6 P 1-x6 Quantum well 8, (Al) x7 Ga 1-x7 ) y6 In 1-y6 P upper waveguide layer 9, (Al) x9 Ga 1-x9 ) y8 In 1-y8 P upper confinement layer 11, Ga 0.5 In 0.5 The transition layer 12 and cap layer 13 are on P. Their fabrication method is the same as in Example 1 above, except that the conventional semiconductor laser device in this example lacks the (Al) layer. x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer 4, (Al) x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer 5, (Al) x4 Ga 1-x4 ) y4 In 1-y4 P lower base layer 6 and (Al) x8 Ga 1-x8 ) y7 In 1-y7 P is the upper base layer 10.

[0087] Example 5

[0088] A conventional semiconductor laser device, reference Figure 2It comprises, from bottom to top, a substrate 1, a buffer layer 2, and (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer 3, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer 7, GaAs x6 P 1-x6 Quantum well 8, (Al) x7 Ga 1-x7 ) y6 In 1-y6 P upper waveguide layer 9, (Al) x9 Ga 1-x9 ) y8 In 1-y8 P upper confinement layer 11, Ga 0.5 In 0.5 The transition layer 12 and cap layer 13 are on P. Their fabrication method is the same as in Example 1 above, except that the conventional semiconductor laser device in this example lacks the (Al) layer. x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer 4.

[0089] Performance testing: The electrical parameters of the semiconductor laser devices with leaky waveguide structures prepared in Examples 1-3 and Examples 4-5 were tested at an operating current of 10A. The results are shown in Table 1.

[0090] Table 1

[0091]

[0092] Finally, it should be noted that any modifications, equivalent substitutions, or improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention. Although specific embodiments of this invention have been described above in conjunction with the accompanying drawings, this is not intended to limit the scope of protection of this invention. Those skilled in the art should understand that various modifications or variations that can be made by those skilled in the art without creative effort based on the technical solutions of this invention are still within the scope of protection of this invention.

Claims

1. A semiconductor laser device with a leaky waveguide structure, characterized in that, The device, from bottom to top, includes a substrate, a buffer layer, and (Al) x1 Ga 1-x1 ) y1 In 1-y1 P-lower confinement layer, (Al) x2 Ga 1-x2 ) y2 In 1-y2 P-mode extension layer, (Al) x3 Ga 1-x3 ) y3 In 1- y3 P-lower confinement layer, (Al) x4 Ga 1-x4 ) y4 In 1-y4 P lower barrier layer, (Al) x5 Ga 1-x5 ) y5 In 1-y5 P-waveguide layer, GaAs x6 P 1-x6 Quantum well, (Al) x7 Ga 1-x7 ) y6 In 1-y6 P upper waveguide layer, (Al) x8 Ga 1-x8 ) y7 In 1-y7 P upper base layer, (Al) x9 Ga 1-x9 ) y8 In 1-y8 P-confinement layer, Ga 0.5 In 0.5 P-transition layer and cap layer; Wherein: 0.1≤x1≤0.5, 0.4≤y1≤0.6; 0≤x2≤0.4, 0.4≤y2≤0.6; 0.1≤x3≤0.5, 0.4≤y3≤0.6; 0.2≤x4≤0.8, 0.4≤y4≤0.6; 0≤x5≤0.2, 0.4≤y5≤0.6; 0.85≤x6≤0.95; 0≤x7≤0.2, 0.4≤y6≤0.6; 0.2≤x8≤0.8, 0.4≤y7≤0.6; 0.3≤x9≤0.7, 0.4≤y8≤0.6; and x9>x1, x9>x3, x7≥x5; the total thickness of the upper waveguide layer and the lower waveguide layer ≥1μm; x2≤x1, x2≤x3.

2. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The (Al) x1 Ga 1-x1 ) y1 In 1-y1 The thickness of the P-type confinement layer is 0.5-1.5 μm, with a Si atom doping concentration of 3E17-1E18 atoms / cm. 3 .

3. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The (Al) x2 Ga 1-x2 ) y2 In 1-y2 The thickness of the P-mode extended layer is 0.1-0.5 μm, with a Si atom doping concentration of 3E17-1E18 atoms / cm². 3 .

4. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The (Al) x3 Ga 1-x3 ) y3 In 1-y3 The thickness of the P-type confinement layer is 0.1-0.5 μm, with a Si atom doping concentration of 3E17-1E18 atoms / cm. 3 The (Al) x3 Ga 1-x3 ) y3 In 1-y3 P-lower confinement layer and (Al) x1 Ga 1-x1 ) y1 In 1-y1 The Al composition is consistent in the P-confinement layer.

5. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The (Al) x4 Ga 1-x4 ) y4 In 1-y4 The thickness of the P-type barrier layer is 2-15 nm, with a Si atom doping concentration of 3E17-1E18 atoms / cm. 3 .

6. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The (Al) x5 Ga 1-x5 ) y5 In 1-y5 The thickness of the waveguide layer under P is 0.5-1.5 μm, with a Si atom doping concentration of 3E16-1E17 atoms / cm. 3 ; Preferably, the (Al) x7 Ga 1-x7 ) y6 In 1-y6 The thickness of the waveguide layer on P is 0.2-0.7 μm.

7. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The GaAs x6 P 1-x6 The thickness of the quantum well is 5-10 nm.

8. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The (Al) x8 Ga 1-x8 ) y7 In 1-y7 The thickness of the barrier layer on P is 2-15 nm, with the doping concentration of Mg or Zn being 5E17-1E18 atoms / cm². 3 .

9. The semiconductor laser device with a leaky waveguide structure according to claim 1, characterized in that, The (Al) x9 Ga 1-x9 ) y8 In 1-y8 The thickness of the confinement layer on P is 0.5-1.5 μm, with a doping concentration of Mg or Zn of 5E17-1E18 atoms / cm. 3 .

10. The semiconductor laser device with a leaky waveguide structure according to any one of claims 1-9, characterized in that, The Ga 0.5 In 0.5 The thickness of the transition layer on P is 20-40 nm, with a doping concentration of Mg or Zn of 1.5E18-3E18 atoms / cm². 3 ; Optionally, the thickness of the cap layer is 0.1-0.5 μm, wherein the doping concentration of C or Zn is 4E19-1E20 atoms / cm². 3 ; Optionally, the thickness of the buffer layer is 0.1-0.3 μm, wherein the Si atom doping concentration is 2E18-5E18 atoms / cm². 3 .

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