An electro-optic modulator

Abstract

This disclosure provides an electro-optic modulator, including a modulator body and an equalization circuit. The equalization circuit includes: a first doped semiconductor, including a first N-type doped region and a first P-type doped region, the first N-type doped region being connected to a first electrode and a signal input terminal, the first P-type doped region being connected to a second electrode and an electrode arm, the first electrode and the second electrode being used to receive a first control voltage with reverse bias; and a second doped semiconductor, including a second N-type doped region and a second P-type doped region, the first end of the second N-type doped region and the first end of the second P-type doped region being both connected to the signal input terminal, the second end of the second N-type doped region and the second end of the second P-type doped region being both connected to the electrode arm, the first end of the second P-type doped region being further connected to a third electrode, the second end of the second N-type doped region being further connected to a fourth electrode, the third electrode and the fourth electrode being used to receive a second control voltage.

Description

Technical Field

[0001] This disclosure relates to the field of communication technology, and in particular to an electro-optic modulator. Background Technology

[0002] With the development of information technologies such as cloud computing, the Internet of Things, and big data, there is a need for high-speed, low-cost, and low-power data processing and transmission technologies to meet the growing information demands. Compared with electrical interconnect technologies, optical interconnect technologies have advantages in bandwidth, latency, and power consumption. Silicon-based optical interconnect technologies offer advantages such as compatibility with traditional CMOS processes, compact devices, low power consumption, and low cost. Silicon-based optical interconnect systems consist of various optical waveguide devices, including lasers, couplers, filters, wavelength division multiplexers / demultiplexers, modulators, and detectors.

[0003] In the process of realizing the inventive concept disclosed herein, the inventors discovered that in related technologies, the modulation bandwidth range of the modulator is difficult to meet the requirements. Summary of the Invention

[0004] In view of the above problems, this disclosure provides an electro-optic modulator.

[0005] According to one aspect of this disclosure, an electro-optic modulator is provided, characterized in that it includes a modulator body and an equalization circuit; the modulator body includes electrodes, each electrode including a signal input terminal and an electrode arm; the equalization circuit is disposed between the signal input terminal and the electrode arm, for filtering an initial modulation signal based on a received first control voltage and a second control voltage to obtain a target modulation signal; the equalization circuit includes: a first doped semiconductor including a first N-type doped region and a first P-type doped region, the first N-type doped region being connected to a first electrode and the signal input terminal, the first P-type doped region being connected to a second electrode and the electrode arm, the first electrode and the second electrode being used to receive a reverse-biased first control voltage; and a second doped semiconductor including a second N-type doped region and a second P-type doped region, the first end of the second N-type doped region and the first end of the second P-type doped region being both connected to the signal input terminal, the second end of the second N-type doped region and the second end of the second P-type doped region being both connected to the electrode arm, the first end of the second P-type doped region being further connected to a third electrode, the second end of the second N-type doped region being further connected to a fourth electrode, the third electrode and the fourth electrode being used to receive the second control voltage.

[0006] According to embodiments of this disclosure, the modulator body further includes an optical input waveguide, an optical beamsplitter, multiple modulation arms, an optical beam combiner, and an optical output waveguide; wherein the optical input waveguide is used to receive optical signals; wherein the optical beamsplitter is connected to the output end of the optical input waveguide and is used to split the optical signals to obtain split optical signals corresponding to each of the multiple modulation arms; wherein the multiple modulation arms are connected one-to-one to the multiple output ends of the optical beamsplitter, and each of the multiple modulation arms is used to modulate the received split optical signals based on a target modulation signal to obtain a modulated optical signal; wherein the multiple input ends of the optical beam combiner are connected one-to-one to the respective output ends of the multiple modulation arms, and the optical beam combiner is used to combine the modulated optical signals corresponding to each of the multiple modulation arms to obtain a target optical signal; wherein the optical output waveguide is connected to the output end of the optical beam combiner and is used to output the received target optical signal.

[0007] According to embodiments of this disclosure, the electrical structure of the modulation arm includes a third N-type doped region, a fourth N-type doped region, an intrinsic region, a fourth P-type doped region, and a third P-type doped region; wherein the doping concentration range of the third N-type doped region includes 5 × 10⁻⁶. 19 cm -3 ~5×10 20 cm -3 The doping concentration range of the N-type fourth doped region includes 5 × 10⁻⁶. 17 cm -3 ~5×10 19 cm -3 The doping concentration range of the P-type third doped region includes 5 × 10⁻⁶. 19 cm -3 ~5×10 20 cm -3 The doping concentration range of the fourth doped region of the P-type type includes 5 × 10⁻⁶. 17 cm -3 ~5×10 19 cm -3 .

[0008] According to embodiments of this disclosure, both the N-type first doped region and the P-type first doped region are connected to the electrode arm via vias; the material used to fill the vias includes gold, aluminum, or copper.

[0009] According to embodiments of this disclosure, the optical structure of the modulation arm is a ridge waveguide structure; the length of the modulation arm includes 200μm to 500μm.

[0010] According to embodiments of this disclosure, the thickness of the modulation arm, the thickness of the first doped semiconductor, and the thickness of the second doped semiconductor are the same.

[0011] According to embodiments of this disclosure, an isolation layer is disposed between the first doped semiconductor and the second doped semiconductor, and the material of the isolation layer includes S. i O2.

[0012] According to embodiments of this disclosure, the length of the first doped semiconductor is 40 μm to 100 μm; the length of the second doped semiconductor is 40 μm to 100 μm; the width of the first doped semiconductor is 20 μm to 80 μm; and the width of the second doped semiconductor is 20 μm to 80 μm.

[0013] According to embodiments of this disclosure, the electrode material includes gold, aluminum, or copper.

[0014] According to embodiments of this disclosure, the substrate of the electro-optic modulator is made of silicon.

[0015] According to the electro-optic modulator provided in this disclosure, based on the application of an initial modulation signal to the electro-optic modulator, the junction capacitance and diffusion capacitance of the PN junction can be changed by changing the first control voltage of the first doped semiconductor. Furthermore, the distribution of charge carriers can be changed by changing the second control voltage of the second doped semiconductor, thereby changing the resistance of the second doped semiconductor. Based on this, the equalization effect of the equalization circuit can be changed by changing the magnitude of the first control voltage and the magnitude of the second control voltage, and the initial modulation signal can be filtered to different degrees. Thus, the modulation bandwidth range of the electro-optic modulator can be expanded. Attached Figure Description

[0016] The foregoing contents, as well as other objects, features, and advantages of this disclosure, will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0017] Figure 1 A schematic diagram of an electro-optic modulator according to an embodiment of the present disclosure is shown.

[0018] Figure 2 A schematic diagram of an electro-optic modulator according to an embodiment of the present disclosure is shown.

[0019] Figure 3 A schematic diagram of an equalization circuit according to an embodiment of the present disclosure is shown.

[0020] Figure 4 A schematic cross-sectional view of the modulation arm of an electro-optic modulator according to an embodiment of the present disclosure is shown. Detailed Implementation

[0021] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0022] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0023] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0024] When using expressions such as "at least one of A, B, and C", they should generally be interpreted in accordance with the meaning that is commonly understood by a person skilled in the art (e.g., "a system having at least one of A, B, and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B, and C, etc.).

[0025] According to embodiments of this disclosure, silicon-based electro-optic modulators perform the function of loading electrical signals onto optical signals. Therefore, the modulation performance of the electro-optic modulator affects the information processing capability of the entire optical transmission system. In some embodiments, silicon-based electro-optic modulator schemes often employ a reverse-biased PN junction electrical structure. Its advantage lies in achieving high-speed modulation through refractive index matching and impedance matching. The PN junction can be a structure composed of N-type doped semiconductors and P-type doped semiconductors. However, the reverse-biased PN junction structure has disadvantages such as limited modulation rate and difficulty in reducing the device size to below 1 mm.

[0026] In the process of realizing the inventive concept disclosed herein, the inventors discovered that, in related technologies, forward-injected PIN modulators have advantages such as high modulation efficiency, low loss, and small size. Furthermore, by loading pre-emphasis signals and cascaded equalization circuits, the modulation rate can be significantly improved, and they are expected to be applied in fields such as high-speed data transmission, optical switching, and optical computing. The waveguide of the PIN modulator can be obtained by setting an intrinsic semiconductor between an N-type doped semiconductor and a P-type doped semiconductor.

[0027] Figure 1 A schematic diagram of an electro-optic modulator according to an embodiment of the present disclosure is shown.

[0028] like Figure 1 As shown, the electro-optic modulator disclosed herein includes a modulator body 110 and an equalization circuit. The modulator body 110 includes electrodes, each comprising a signal input terminal 111 and an electrode arm 112. The equalization circuit, disposed between the signal input terminal 111 and the electrode arm 112, is used to filter the initial modulation signal based on a received first control voltage and a second control voltage to obtain a target modulation signal. The equalization circuit includes a first doped semiconductor 130, comprising a first N-type doped region 131 and a first P-type doped region 132. The first N-type doped region 131 is connected to a first electrode 133 and the signal input terminal 111, and the first P-type doped region 132 is connected to a second electrode 134 and the electrode arm 112. The first electrode 133 and the second electrode 134 are used to receive a reverse-biased first control voltage. The second doped semiconductor 120 includes a second N-type doped region 121 and a second P-type doped region 122. The first end of the second N-type doped region 121 and the first end of the second P-type doped region 122 are both connected to the signal input terminal 111. The second end of the second N-type doped region 121 and the second end of the P-type doped region are both connected to the electrode arm 112. The first end of the second P-type doped region 122 is also connected to the third electrode 123. The second end of the second N-type doped region 121 is also connected to the fourth electrode 124. The third electrode 123 and the fourth electrode 124 are used to receive the second control voltage.

[0029] According to embodiments of this disclosure, signal input terminal 111 can be used to receive an initial modulation signal. An equalization circuit can be used to filter the initial modulation signal to obtain a target modulation signal. Electrode arm 112 can be used to receive the target modulation signal so that the electro-optic modulator can modulate the optical signal input to the electro-optic modulator using the target modulation signal.

[0030] According to embodiments of this disclosure, both the first doped semiconductor 130 and the second doped semiconductor 120 can be semiconductors formed based on a PN junction. By connecting the first N-type doped region 131 to the first electrode 133 and the signal input terminal 111, and the first P-type doped region 132 to the second electrode 134 and the electrode arm 112, the first doped semiconductor 130 can be equivalent to a capacitor. By connecting the first end of the second N-type doped region 121 and the first end of the second P-type doped region 122 to the signal input terminal 111, and connecting the second end of the second N-type doped region 121 and the second end of the P-type doped region to the electrode arm 112, the second doped semiconductor 120 can be equivalent to a resistor. Since the first doped semiconductor 130 is equivalent to a capacitor, a reverse bias voltage needs to be applied to the first doped semiconductor 130. Since the second doped semiconductor 120 is equivalent to a resistor, either a forward bias voltage or a reverse bias voltage can be applied to the second doped semiconductor 120.

[0031] Based on this, the equalization circuit can be equivalent to an RC (Resistor-Capacitance) parallel circuit, and its function can be similar to a high-pass filter. Since the electro-optic modulator attenuates the high-frequency signal of the modulated optical signal, this equalization circuit can compensate for the attenuation of the high-frequency signal by the electro-optic modulator.

[0032] According to embodiments of this disclosure, the initial modulation signal can be an RF (Radio Frequency Signal) signal. For the first doped semiconductor 130 parallel to the RF signal direction, changing the first control voltage across the first doped semiconductor 130 can significantly alter its junction capacitance and diffusion capacitance. For the second doped semiconductor 120 perpendicular to the RF signal, changing the second control voltage across the second doped semiconductor 120 can adjust the carrier distribution, thereby changing the radial resistance of the second doped semiconductor 120. Based on this, by controlling the first control voltage across the first doped semiconductor 130 and the second control voltage across the second doped semiconductor 120, the operating state of the equalization circuit can be dynamically adjusted, changing the strength of the equalization effect. This allows the equalization circuit to filter the initial modulation signal to different degrees, thereby enabling a wide range of continuous adjustment of the modulator bandwidth.

[0033] According to embodiments of this disclosure, both the first control voltage and the second control voltage can be DC voltages.

[0034] According to embodiments of this disclosure, based on the application of an initial modulation signal to the electro-optic modulator, the PN junction capacitance and diffusion capacitance can be changed by altering the first control voltage of the first doped semiconductor 130. Furthermore, the carrier distribution can be changed by altering the second control voltage of the second doped semiconductor 120, thereby changing the resistance of the second doped semiconductor 120. Based on this, by changing the magnitude of the first control voltage and the magnitude of the second control voltage, the equalization effect of the equalization circuit can be altered, and the initial modulation signal can be filtered to different degrees. As a result, the modulation bandwidth range of the electro-optic modulator can be expanded.

[0035] According to embodiments of this disclosure, the modulator body further includes an optical input waveguide, an optical beamsplitter, multiple modulation arms, an optical beam combiner, and an optical output waveguide. The optical input waveguide receives optical signals. The optical beamsplitter is connected to the output of the optical input waveguide and splits the optical signal into beams corresponding to the multiple modulation arms. Each of the multiple modulation arms is connected to one of the multiple outputs of the optical beamsplitter, and each modulation arm modulates the received beams of optical signals based on a target modulation signal to obtain a modulated optical signal. The multiple inputs of the optical beam combiner are connected to the outputs of each of the multiple modulation arms, and the optical beam combiner combines the modulated optical signals corresponding to each modulation arm to obtain the target optical signal. The optical output waveguide is connected to the output of the optical beam combiner and outputs the received target optical signal.

[0036] According to embodiments of this disclosure, there may be two modulation arms, each of which may be a waveguide, and the target modulation signal may be loaded onto the modulation arm via an electrode arm.

[0037] According to embodiments of this disclosure, by changing the carrier concentration in the modulation arm to alter the effective refractive index of the waveguide region, the phase difference between the two split optical signals can be dynamically changed, thereby modulating the optical signal.

[0038] Figure 2 A schematic diagram of an electro-optic modulator according to an embodiment of the present disclosure is shown.

[0039] like Figure 2As shown, the modulator body may include an optical input waveguide 201, an optical beamsplitter 202, multiple modulation arms 203, an optical beam combiner 204, and an optical output waveguide 205. The modulator body may also include a signal input terminal 206_1, a signal input terminal 206_2, and an electrode arm 207. The signal input terminal 206_1 can be a negative electrode, and the signal input terminal 206_2 can be a positive electrode. The equalization circuit may include a first doped semiconductor 208, a second doped semiconductor 209, a first electrode 210, a second electrode 211, a third electrode 212, and a fourth electrode 213. The first electrode 210 can be a positive electrode, and the second electrode 211 can be a negative electrode, so that the first doped semiconductor 208 receives a reverse bias voltage.

[0040] Figure 3 A schematic diagram of an equalization circuit according to an embodiment of the present disclosure is shown.

[0041] like Figure 3 As shown, the on-chip tunable equalization circuit can be implemented in the silicon layer. The equalization circuit can be composed of two mutually perpendicular PN junctions connected in parallel, namely the first doped semiconductor 310 and the second doped semiconductor 320. These two PN junctions can be isolated by a material to prevent them from conducting together, thus achieving the parallel connection of the two PN junctions. The vertical PN junction, i.e., the first doped semiconductor 310, operates under reverse bias. The small junction capacitance of the PN junction is connected in series with the capacitance of the PIN modulation arm, which can significantly reduce the total capacitance of the equivalent circuit. The horizontal PN junction, i.e., the second doped semiconductor 320, can operate under forward bias. By applying a lateral voltage to change the carrier concentration distribution, the equivalent resistance in the vertical direction can be changed.

[0042] According to embodiments of this disclosure, the electrical structure of the modulation arm includes a third N-type doped region, a fourth N-type doped region, an intrinsic region, a fourth P-type doped region, and a third P-type doped region. The doping concentration range of the third N-type doped region is 5 × 10⁻⁶. 19 cm -3 ~5×10 20 cm -3 The doping concentration range of the N-type fourth doped region includes 5 × 10⁻⁶. 17 cm -3 ~5×10 19 cm -3 The doping concentration range of the P-type third doped region includes 5 × 10⁻⁶. 19 cm -3 ~5×10 20 cm -3The doping concentration range of the fourth doped region of the P-type type is 5×10¹⁷ cm⁻³ to 5×10¹⁹ cm⁻³.

[0043] According to embodiments of this disclosure, the modulation arm can be a PIN structure and can operate under forward bias conditions. The PIN modulator can include four doped regions. The two ends of the doped region are heavily doped P-type and N-type regions, namely the third N-type doped region and the third P-type doped region described above, for achieving ohmic contact with the metal electrode. The inner side is a lightly doped P-type and N-type region, namely the fourth N-type doped region and the fourth P-type doped region described above, for reducing optical loss and achieving forward carrier injection.

[0044] Figure 4 A schematic cross-sectional view of the modulation arm of an electro-optic modulator according to an embodiment of the present disclosure is shown.

[0045] like Figure 4 As shown, the signal input terminal can be 401, the equalization circuit can be 402, the modulation arm can be 403, and the electrode arm can be 404.

[0046] According to embodiments of this disclosure, both the N-type first doped region and the P-type first doped region are connected to the electrode arm via vias. The material used to fill the vias includes gold, aluminum, or copper.

[0047] According to embodiments of this disclosure, since both the N-type first doped region and the P-type first doped region are connected to the electrode arm through vias, good ohmic contact can be ensured.

[0048] According to embodiments of this disclosure, the optical structure of the modulation arm is a ridge waveguide structure. The length of the modulation arm ranges from 200 μm to 500 μm.

[0049] According to embodiments of this disclosure, the length of the first doped semiconductor is 40 μm to 100 μm. The length of the second doped semiconductor is 40 μm to 100 μm. The width of the first doped semiconductor is 20 μm to 80 μm. The width of the second doped semiconductor is 20 μm to 80 μm.

[0050] According to embodiments of this disclosure, based on the above dimensions, a modulation arm and equalization circuit that meet the requirements can be obtained, which helps to modulate the optical signal, thereby realizing the electro-optic modulator with a wide modulation bandwidth of this application.

[0051] According to embodiments of this disclosure, the thickness of the modulation arm, the thickness of the first doped semiconductor, and the thickness of the second doped semiconductor are the same.

[0052] According to embodiments of this disclosure, an electro-optic modulator that meets the requirements can be obtained by making the thickness of the modulation arm, the thickness of the first doped semiconductor, and the thickness of the second doped semiconductor the same.

[0053] According to embodiments of this disclosure, an isolation layer is disposed between the first doped semiconductor and the second doped semiconductor, and the material of the isolation layer includes S. i O2.

[0054] According to embodiments of this disclosure, by using S i O2 can isolate the first doped semiconductor and the second doped semiconductor, achieving a good isolation effect, thus obtaining an RC parallel equalization circuit.

[0055] According to embodiments of this disclosure, the electrode material includes gold, aluminum, or copper.

[0056] According to embodiments of this disclosure, the conductivity of the electrodes of the electro-optic modulator of this application can meet the requirements by using gold, aluminum, or copper.

[0057] According to embodiments of this disclosure, the substrate of the electro-optic modulator is made of silicon.

[0058] According to embodiments of this disclosure, a silicon dioxide buried oxide layer is disposed on a silicon substrate, and a modulator active region silicon waveguide and a silicon dioxide isolation layer are disposed on the buried oxide layer. The active region silicon waveguide may refer to a modulation arm.

[0059] It should also be noted that the directional terms mentioned in the embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings and are not intended to limit the scope of protection of this disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted where they may cause confusion in understanding this disclosure.

[0060] Furthermore, the shapes and dimensions of the components in the figures do not reflect actual size and proportion, but are merely illustrative of embodiments of this disclosure. Additionally, any reference numerals placed between parentheses in the claims should not be construed as limiting the scope of the claims.

[0061] Unless otherwise stated, the numerical parameters in this specification and the appended claims are approximate values ​​and can be varied according to desired characteristics derived from the content of this disclosure. Specifically, all figures used in the specification and claims to indicate composition, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. Generally, this means that a specific amount may vary by ±10% in some embodiments, ±5% in some embodiments, ±1% in some embodiments, and ±0.5% in some embodiments.

[0062] Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

[0063] The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify corresponding elements does not in itself imply that the element has any ordinal number, nor does it represent the order of one element with another, or the order of manufacturing methods. The use of these ordinal numbers is solely to clearly distinguish one element with a given name from another element with the same name. Those skilled in the art will understand that modules in the apparatus of the embodiments can be adaptively changed and placed in one or more devices different from that embodiment. Modules, units, or components in the embodiments can be combined into a single module, unit, or component, and further, they can be divided into multiple sub-modules, sub-units, or sub-components. Except where at least some of such features and / or processes or units are mutually exclusive, any combination can be used to combine all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or units of any method or apparatus so disclosed. Unless expressly stated otherwise, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature that serves the same, equivalent, or similar purpose. Furthermore, in the unit claims that enumerate several devices, several of these devices may be embodied by the same hardware item.

[0064] Similarly, it should be understood that, in order to simplify this disclosure and aid in understanding one or more of the various aspects of the disclosure, in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof. However, this approach to disclosure should not be construed as reflecting an intention that the claimed disclosure requires more features than are expressly recited in each claim. Rather, as reflected in the following claims, the aspects of the disclosure consist of fewer than all features of a single foregoing disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of the disclosure.

[0065] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

[0066] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. An electro-optic modulator, characterized in that, It includes a modulator body and an equalization circuit; the modulator body includes electrodes, and the electrodes include a signal input terminal and an electrode arm. The equalization circuit is disposed between the signal input terminal and the electrode arm, and is used to filter the initial modulation signal based on the received first control voltage and second control voltage to obtain the target modulation signal. The equalization circuit includes: The first doped semiconductor includes a first N-type doped region and a first P-type doped region. The first N-type doped region is connected to the first electrode and the signal input terminal. The first P-type doped region is connected to the second electrode and the electrode arm. The first electrode and the second electrode are used to receive the first control voltage that is reverse biased. as well as The second doped semiconductor includes a second N-type doped region and a second P-type doped region. The first end of the second N-type doped region and the first end of the second P-type doped region are both connected to the signal input terminal. The second end of the second N-type doped region and the second end of the second P-type doped region are both connected to the electrode arm. The first end of the second P-type doped region is also connected to a third electrode. The second end of the second N-type doped region is also connected to a fourth electrode. The third electrode and the fourth electrode are used to receive the second control voltage. The first doped semiconductor and the second doped semiconductor are perpendicular to each other and connected in parallel. When the initial modulation signal is applied to the electro-optic modulator, the junction capacitance and diffusion capacitance of the PN junction of the first doped semiconductor are changed by changing the first control voltage, and the carrier distribution is changed by changing the second control voltage, thereby changing the resistance of the second doped semiconductor. This changes the equalization effect of the equalization circuit, filters the initial modulation signal to different degrees, and expands the modulation bandwidth range of the electro-optic modulator.

2. The electro-optic modulator according to claim 1, characterized in that, The modulator body also includes an optical input waveguide, an optical beam splitter, multiple modulation arms, an optical beam combiner, and an optical output waveguide; The optical input waveguide is used to receive optical signals. The optical beam splitter is connected to the output end of the optical input waveguide and is used to split the optical signal to obtain split optical signals corresponding to each of the plurality of modulation arms. The plurality of modulation arms are connected one by one to the plurality of output terminals of the optical beam splitter. Each of the plurality of modulation arms is used to modulate the received beam splitting optical signal based on the target modulation signal to obtain a modulated optical signal. The optical beam combiner is connected one by one to the output of each of the multiple modulation arms. The optical beam combiner is used to combine the modulated optical signals corresponding to each of the multiple modulation arms to obtain the target optical signal. The optical output waveguide is connected to the output end of the optical combiner and is used to output the received target optical signal.

3. The electro-optic modulator according to claim 2, characterized in that, The electrical structure of the modulation arm includes a third N-type doped region, a fourth N-type doped region, an intrinsic region, a fourth P-type doped region, and a third P-type doped region; The doping concentration range of the third N-type doped region includes 5 × 10⁻⁶. 19 cm -3 ~5×10 20 cm -3 ; The doping concentration range of the fourth N-type doped region includes 5 × 10⁻⁶. 17 cm -3 ~5×10 19 cm -3 ; The doping concentration range of the third P-type doped region includes 5 × 10⁻⁶. 19 cm -3 ~5×10 20 cm -3 ; The doping concentration range of the fourth P-type doped region includes 5 × 10⁻⁶. 17 cm -3 ~5×10 19 cm -3 .

4. The electro-optic modulator according to claim 3, characterized in that, Both the first N-type doped region and the first P-type doped region are connected to the electrode arm through through-holes; The materials used to fill the through holes include gold, aluminum, or copper.

5. The electro-optic modulator according to claim 2, characterized in that, The optical structure of the modulation arm is a ridge waveguide structure; The modulation arm length ranges from 200μm to 500μm.

6. The electro-optic modulator according to claim 2, characterized in that, The thickness of the modulation arm, the thickness of the first doped semiconductor, and the thickness of the second doped semiconductor are the same.

7. The electro-optic modulator according to claim 1, characterized in that, An isolation layer is disposed between the first doped semiconductor and the second doped semiconductor, and the material of the isolation layer includes S. i O2.

8. The electro-optic modulator according to claim 1, characterized in that, The length of the first doped semiconductor ranges from 40 μm to 100 μm; The length of the second doped semiconductor ranges from 40 μm to 100 μm; The width of the first doped semiconductor ranges from 20 μm to 80 μm; The width of the second doped semiconductor ranges from 20 μm to 80 μm.

9. The electro-optic modulator according to claim 1, characterized in that, The electrode is made of gold, aluminum, or copper.

10. The electro-optic modulator according to claim 1, characterized in that, The substrate of the electro-optic modulator is made of silicon.

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