Semiconductor structure and method of manufacturing a semiconductor structure

By placing the capacitor structure on the substrate in the DRAM and setting an isolation layer between the capacitor structure and the substrate, the leakage problem at the contact point between the capacitor and the substrate is solved, thereby improving the stability of the capacitor and the overall performance of the semiconductor structure.

CN116867265BActive Publication Date: 2026-07-24CHANGXIN MEMORY TECH INC
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHANGXIN MEMORY TECH INC
Filing Date
2022-03-25
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

In TOC structure DRAM, leakage occurs at the contact point between the capacitor and the substrate, affecting storage performance.

Method used

The capacitor structure is placed on the substrate, and the transistor structure is placed on the side of the capacitor structure away from the substrate. By setting an isolation layer in the substrate, which is located between the capacitor structure and part of the semiconductor layer of the substrate, the difficulty of transistor fabrication process is reduced, and it is easier to connect the transistor to word lines and bit lines.

Benefits of technology

It effectively reduces leakage current problems, improves the stability of capacitor structures and the stability of signal storage and retrieval processes in semiconductor structures, and optimizes the performance of semiconductor structures.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN116867265B_ABST
    Figure CN116867265B_ABST
Patent Text Reader

Abstract

The application provides a semiconductor structure and a preparation method thereof, and belongs to the technical field of semiconductors. The semiconductor structure comprises a substrate, a capacitor structure, a transistor structure, a bit line and a word line. The substrate comprises a semiconductor layer and an isolation layer. The capacitor structure is arranged on the substrate, and the isolation layer is located between the capacitor structure and at least part of the semiconductor layer. The transistor structure and the word line are arranged on a side of the capacitor structure away from the substrate. One of a source and a drain of the transistor structure is electrically connected to the capacitor structure, a gate of the transistor structure is electrically connected to the word line, and the other of the source and the drain of the transistor structure is electrically connected to the bit line. The semiconductor structure can effectively alleviate the problem of leakage current of the capacitor structure, ensure the stable performance of the capacitor structure, and improve the performance of the semiconductor structure.
Need to check novelty before this filing date? Find Prior Art