Film production method and film production apparatus

Abstract

A film production method, a film production apparatus, and a laminate, in a step of producing a film on a substrate and a step of exhausting air with an exhaust unit, a channel plate is arranged on the substrate in a manner facing the substrate across a space formed on the substrate, mixed gas in the space formed on the substrate flows linearly from a mixed gas supply unit toward the exhaust unit in a manner along at least a part of a main surface of the substrate, a convex portion is formed on a part of the channel plate and / or a part of a stage in a manner to shield the mixed gas flow from deviating from a direction from the mixed gas supply unit toward the exhaust unit, the channel plate and the convex portion are arranged in a manner to form a gap having a width (d2) smaller than a shortest distance (d1) in the space between the channel plate and the substrate, and film production and air exhaustion are performed. Thus, a film production method capable of producing a high-quality film having significantly reduced attachment of surface defects or foreign matters with high productivity can be provided.

Description

TECHNICAL FIELD

[0001] The present application relates to a film forming method, a film forming apparatus, and a laminate, which supply an atomized liquid raw material to a substrate to form a film. BACKGROUND

[0002] As a method capable of forming an epitaxial film or the like at a low temperature and at an atmospheric pressure, a film forming method using water particles such as a mist chemical vapor deposition (CVD) method is known. In Patent Literature 1, a film forming apparatus is shown which forms a film by supplying a raw material mist to a substrate from a nozzle arranged obliquely with respect to the substrate. In addition, in Patent Literature 2, a film forming method is described which carries a raw material mist into a reaction vessel using a carrier gas, and further generates a rotational flow to cause the mist to react with a substrate.

[0003] However, the conventional film forming method cannot sufficiently control the raw material mist on the substrate, and as a result, there are problems in that, for a large-diameter substrate of a practical size, it is difficult to form a film of a uniform thickness, or further, foreign matter such as a powder generated due to turbulence of the mist adheres to the surface of the substrate, and the quality of the film and the yield are reduced.

[0004] [Prior Art Documents]

[0005] [Patent Literature]

[0006] Patent Literature 1: Japanese Patent Application Laid-Open No. 2018-142637

[0007] Patent Literature 2: Japanese Patent Application Laid-Open No. 2016-146442 SUMMARY

[0008] [Problems to be Solved by the Invention]

[0009] The present application has been made to solve the problems described above, and aims to provide a film forming method capable of producing a high-quality film in which attachment of surface defects or particles is significantly reduced, at high productivity, a film forming apparatus capable of producing a high-quality film in which attachment of surface defects or particles is significantly reduced, at high productivity, and a laminate in which particles on a main surface are few.

[0010] [Technical Means for Solving the Problems]

[0011] To solve the problems described above, in the present application, a film forming method is provided, characterized by comprising:

[0012] a step of atomizing a raw material solution to form a raw material mist;

[0013] a step of mixing the raw material mist with a carrier gas to form a mixed gas;

[0014] a step of placing a substrate on a stage;

[0015] a step of supplying the mixed gas from a mixed gas supply unit to the substrate and performing film formation on the substrate; and

[0016] a step of exhausting the mixed gas after the film formation by an exhaust unit,

[0017] in the step of performing film formation on the substrate and the step of exhausting by the exhaust unit,

[0018] a channel plate is disposed on the substrate in a manner facing the substrate across a space,

[0019] a mixed gas flow in which the mixed gas linearly flows from the mixed gas supply unit toward the exhaust unit along at least a portion of a main surface of the substrate in the space formed on the substrate,

[0020] a convex portion is formed in a portion of the channel plate and / or a portion of the stage in a manner blocking the mixed gas flow from deviating from a direction from the mixed gas supply unit toward the exhaust unit,

[0021] the channel plate and the convex portion are disposed in a manner forming a gap having a width d2 smaller than a shortest distance d1 in the space between the channel plate and the substrate, and the film formation and the exhaust are performed.

[0022] If this kind of film formation method, then the attachment of particles can be suppressed, thereby becoming a film formation method capable of forming a high-quality film uniformly on a substrate surface.

[0023] At this time, it is preferable that the step of placing the substrate on the stage is performed in a manner that a height difference between an upper surface of the stage and an upper surface of the substrate becomes 1 mm or less.

[0024] If this kind of film formation method, then the attachment of particles can be more easily suppressed.

[0025] At this time, the channel plate and the convex portion can be disposed in a manner that the shortest distance d1 becomes 1.5 times or more of the width d2.

[0026] If this kind of film formation method, then a higher-quality film can be formed.

[0027] At this time, the channel plate and the convex portion can be disposed in a manner that the shortest distance d1 becomes 2 times or more of the width d2.

[0028] If this kind of film formation method, then a higher-quality film can be formed.

[0029] In addition, at this time, the convex portion can be formed in a portion of the channel plate.

[0030] If this is the film forming method, it can be configured to be a film forming method capable of more easily and uniformly forming a high-quality film.

[0031] In addition, at this time, the protrusion can be formed on a portion of the stage.

[0032] If this is the film forming method, it can be configured to be a film forming method capable of more easily and uniformly forming a high-quality film.

[0033] In addition, in the present application, a film forming apparatus is provided, including:

[0034] An atomization unit atomizes a raw material solution to form a raw material mist;

[0035] A carrier gas supply unit that carries the raw material mist;

[0036] A stage on which a substrate is placed;

[0037] A mixed gas supply unit that supplies a mixed gas, in which the raw material mist and the carrier gas are mixed, to the surface of the substrate;

[0038] A passage plate that is disposed on the substrate so as to face the substrate across a space;

[0039] An exhaust unit that exhausts the mixed gas in the space; and

[0040] A protrusion that is formed on a portion of the passage plate and / or a portion of the stage so as to shield a flow of the mixed gas from deviating from a direction from the mixed gas supply unit toward the exhaust unit, and the film forming apparatus is characterized in that

[0041] The passage plate and the protrusion are disposed so as to form a gap having a width d2 that is smaller than a shortest distance d1 in the space between the passage plate and the substrate.

[0042] If this is the film forming apparatus, particle adhesion can be suppressed, thereby becoming a film forming apparatus capable of uniformly forming a high-quality film on the surface of the substrate.

[0043] The stage can be configured to include a pocket that accommodates the substrate in a portion of the substrate on which the substrate is placed.

[0044] By providing such a pocket, the difference in level between the upper surface of the stage and the upper surface of the substrate can be adjusted, turbulence due to the step difference between the stage and the substrate can be sufficiently suppressed, thereby suppressing the generation of particles, and in addition, the distribution of the generated mist can be sufficiently suppressed, thereby preventing the film thickness distribution from becoming large.

[0045] The passage plate and the protrusion are preferably disposed so that the shortest distance d1 becomes 1.5 times or more of the width d2.

[0046] If such a film forming apparatus is used, a higher quality film can be formed.

[0047] The channel plate and the protrusion are more preferably arranged so that the shortest distance d1 is more than twice the width d2.

[0048] If such a film forming apparatus is used, a higher quality film can be formed.

[0049] The protrusion can be formed on a portion of the channel plate.

[0050] If such a film forming apparatus is used, a higher quality film can be formed.

[0051] The protrusion can be formed on a portion of the stage.

[0052] If such a film forming apparatus is used, a higher quality film can be formed.

[0053] In addition, in the present application, a laminate is provided, comprising:

[0054] a base; and

[0055] an α-Ga2O3 film directly or indirectly laminated on the base, and the laminate is characterized in that,

[0056] the density of particles having a diameter of 0.5 μm or more on a main surface of the laminate is 9 per 10 cm 2 or more.

[0057] Such a laminate can have a high quality α-Ga2O3 film in which particle adhesion is suppressed.

[0058] The area of the main surface of the base can be set to 5 cm 2 or more.

[0059] In the present application, even if the area of the main surface of the base is 5 cm 2 or more, a high quality α-Ga2O3 film in which particle adhesion is suppressed can be obtained.

[0060] [Effects of the Invention]

[0061] As described above, if the film forming method of the present application is used, a high quality film, such as a thin film, in which the adhesion of foreign matter such as surface defects or particles is significantly reduced, can be manufactured with high productivity.

[0062] In addition, if the film forming apparatus of the present application is used, a high quality film, such as a thin film, in which the adhesion of foreign matter such as surface defects or particles is significantly reduced, can be manufactured with high productivity.

[0063] Further, if it is the laminate of the present application, a high-quality α-Ga2O3 film with reduced particle adhesion can be obtained. BRIEF DESCRIPTION OF DRAWINGS

[0064] Figure 1 is a schematic diagram showing a representative example of a film forming apparatus that can be used in the film forming method of the present application.

[0065] Figure 2 is a diagram showing a representative example of a bottom of a passage plate that can be used in the manufacturing method of the present application.

[0066] Figure 3 is a schematic side view showing a representative example of a configuration of a passage plate, a convex portion, and a stage that are performed in the film forming method of the present application.

[0067] Figure 4 is another side view of the configuration shown in Figure 3 .

[0068] Figure 5 is a schematic side view showing another example of a configuration of a passage plate, a convex portion, and a stage that are performed in the film forming method of the present application.

[0069] Figure 6 is a schematic side view showing another example of a configuration of a passage plate, a convex portion, and a stage that are performed in the film forming method of the present application.

[0070] Figure 7 is a plan view showing a configuration from a vertical upper side Figure 6 .

[0071] Figure 8 is a schematic side view showing another example of a film forming portion in a film forming apparatus that can be used in the film forming apparatus of the present application.

[0072] Figure 9 is a schematic cross-sectional view of an example of the laminate of the present application. DETAILED DESCRIPTION

[0073] As described above, it is required to develop a film forming method that can produce a high-quality film with significantly reduced adhesion of surface defects or foreign matters with high productivity.

[0074] As a result of repeated research by the present inventors on the problem, it has been found that a film forming method based on a mist CVD method, in which a passage plate is arranged on a substrate in a manner facing the substrate across a space, mixed gas in the space formed on the substrate flows linearly from a mixed gas supply unit toward an exhaust unit along at least a part of a main surface of the substrate, a convex portion is formed in a part of the passage plate and / or a part of a stage in a manner to shield the mixed gas flow from deviating from the direction from the mixed gas supply unit toward the exhaust unit, the passage plate and the convex portion are arranged in a manner to form a gap having a width d2 smaller than a shortest distance d1 in the space between the passage plate and the substrate, and film forming and exhaust are performed, and if this film forming method and film forming apparatus, the flow of the mixed gas can be prevented from being disturbed, and a high-quality film in which the attachment of foreign matter such as surface defects or particles is significantly reduced can be produced with high productivity, thereby completing the present invention.

[0075] That is, the present invention is a film forming method characterized by comprising:

[0076] a step of atomizing a raw material solution to form a raw material mist;

[0077] a step of mixing the raw material mist with a carrier gas to form a mixed gas;

[0078] a step of placing a substrate on a stage;

[0079] a step of supplying the mixed gas from a mixed gas supply unit to the substrate and performing film forming on the substrate; and

[0080] a step of exhausting the mixed gas after the film forming by an exhaust unit,

[0081] in the step of performing film forming on the substrate and the step of exhausting by the exhaust unit,

[0082] a passage plate is arranged on the substrate in a manner facing the substrate across a space,

[0083] the mixed gas in the space formed on the substrate flows linearly from the mixed gas supply unit toward the exhaust unit along at least a part of a main surface of the substrate,

[0084] a convex portion is formed in a part of the passage plate and / or a part of the stage in a manner to shield the mixed gas flow from deviating from the direction from the mixed gas supply unit toward the exhaust unit,

[0085] the passage plate and the convex portion are arranged in a manner to form a gap having a width d2 smaller than a shortest distance d1 in the space between the passage plate and the substrate, and the film forming and the exhaust are performed.

[0086] Further, the present application is a film forming apparatus including:

[0087] an atomizing unit that atomizes a raw material solution to form a raw material mist;

[0088] a carrier gas supply unit that carries the raw material mist;

[0089] a stage that holds a substrate;

[0090] a mixed gas supply unit that supplies a mixed gas of the raw material mist and the carrier gas to a surface of the substrate;

[0091] a passage plate that is arranged on the substrate so as to face the substrate with a space therebetween;

[0092] an exhaust unit that exhausts the mixed gas in the space; and

[0093] a convex portion that is formed in a portion of the passage plate and / or a portion of the stage so as to shield a flow of the mixed gas from deviating from a direction from the mixed gas supply unit toward the exhaust unit, and the film forming apparatus is characterized in that

[0094] the passage plate and the convex portion are arranged so as to form a gap having a width d2 that is smaller than a shortest distance d1 in the space between the passage plate and the substrate.

[0095] Further, the present application is a laminate including:

[0096] a substrate; and

[0097] an α-Ga2O3 film that is directly or indirectly laminated on the substrate, and the laminate is characterized in that

[0098] a density of particles having a diameter of 0.5 μm or more on a main surface of the laminate is 9 per 10 cm 2 or more.

[0099] Hereinafter, the present application will be described in detail with reference to the accompanying drawings, but the present application is not limited thereto.

[0100] [Film forming method]

[0101] First, an example of a film forming apparatus that can be used in the film forming method of the present application will be described.

[0102] A representative example of a film forming apparatus that can be used in the film forming method of the present application is shown in Figure 1 . However, the film forming apparatus that can perform the film forming method of the present application is not limited to the film forming apparatus shown in Figure 1 .

[0103] Figure 1The film forming apparatus 1 shown includes a carrier gas 11, a carrier gas pipe 12, an atomization device 20, a mist pipe 24, a mixed gas supply unit 35, a stage 32, a rectification plate 101, and an exhaust unit 36, with a substrate 34 on which a film is to be formed placed on the stage 32 (a step of placing the substrate on the stage). The carrier gas 11 and the carrier gas pipe 12 constitute a carrier gas supply section 10. In addition, the rectification plate 101 and the stage 32 constitute a rectification mechanism described below, and further, the mixed gas supply unit 35, the stage 32, the rectification plate 101, the exhaust unit 36, and the stage 32 constitute a film forming section 30. Further, 35a is a discharge port, and 36a is an exhaust port.

[0104] Inside the atomization device 20, a raw material solution 21 is housed as a raw material. The raw material solution 21 is not particularly limited as long as it is a solution that can be atomized (also referred to as "mistified"), and an organic solvent solution or an aqueous solution containing a raw material according to the purpose, such as an alcohol or a ketone, can be used.

[0105] The raw material solution 21 is atomized using a known means to form a raw material mist 22. This is an example of a step of forming a raw material mist in the film forming method of the present application.

[0106] The carrier gas 11 is further supplied to the atomization device 20 and mixed with the raw material mist 22 to become a mixed gas 23. This is an example of a step of forming a mixed gas in the film forming method of the present application. It can also be said that the carrier gas supply section 10 and the atomization device 20 constitute a mechanism 40 that forms the mixed gas 23. The mixed gas 23 is carried by the mist pipe 24 and supplied to the mixed gas supply unit 35.

[0107] The mixed gas 33 is supplied from the mixed gas supply unit 35 to a space 31 formed inside a rectification mechanism between the rectification plate 101 and the stage 32, and supplied to the substrate 34 placed on the stage 32, particularly the surface of the substrate 34, while being rectified inside the rectification mechanism. In this process, the mixed gas 33 reacts with the substrate 34 to form a film on the substrate 34. This is an example of a step of performing film formation on a substrate in the film forming method of the present application.

[0108] The remaining portion of the mixed gas 33 that does not contribute to film formation or by-products generated when the mixed gas 33 reacts with the substrate 34 is exhausted to the outside of the system as a post-film formation mixed gas by the exhaust unit 36. This is an example of a step of exhausting using an exhaust unit in the film forming method of the present application. The exhaust from the exhaust unit 36 can be treated as needed by a particle collector or a scrubber, or the like, not shown in the figure.

[0109] The atomization of the raw material solution 21 is not particularly limited as long as the raw material solution 21 is atomized or dropletized, and can be a known means, but in the present application, an atomization means using ultrasonic waves is preferably used. The mist or droplets obtained using ultrasonic waves have a zero initial velocity and are suspended in the air, and thus, for example, instead of being sprayed as in an atomizer, a mist that can be carried as a gas in the space is preferably used, and thus, there is no damage due to collision energy, and thus, it is very suitable. The droplet size is not particularly limited, and can be a droplet of several mm or so, but is preferably 50 μm or less, and more preferably 0.1 μm to 10 μm.

[0110] The carrier gas 11 is not particularly limited, and for example, in addition to air, oxygen, and ozone, an inert gas such as nitrogen or argon, or a reducing gas such as hydrogen or a synthetic gas is suitably used. The kind of the carrier gas 11 can be one, or two or more. The flow rate of the carrier gas is appropriately set according to the size of the substrate or the size of the film forming chamber, and for example, can be set to about 0.01 L / minute to 100 L / minute.

[0111] In addition, although not shown, a dilution gas can be further added to adjust the ratio of the raw material mist 22 to the carrier gas 11. The flow rate of the dilution gas is appropriately set, and for example, can be set to 0.1 times / minute to 10 times / minute of the carrier gas. The dilution gas can be supplied to the downstream side of the atomization device 20, for example. The dilution gas can use the same gas as the carrier gas 11, or a different gas.

[0112] In addition, the film formation can be performed under any one of atmospheric pressure, pressurization, and depressurization, but from the viewpoint of the cost of the device or productivity, the film formation is preferably performed under atmospheric pressure.

[0113] Furthermore, a configuration using one atomization device is shown in Figure 1 but the film forming device that can be used in the film forming method of the present application is not limited thereto, and a plurality of atomization devices can be connected in series or in parallel. In this case, different raw material solutions can be respectively put in each atomization device, or the same raw material can be put in each atomization device. In addition, each raw material can be atomized independently and supplied to the mixed gas supply unit 35, or the plurality of raw material mists can be mixed and then supplied to the mixed gas supply unit 35.

[0114] The mist pipe 24 is not particularly limited as long as it has sufficient stability with respect to the temperature or the like in the cooperation of the raw material solution 21 or the mixed gas supply unit 35 to be used and the carrier gas pipe 12, and can be a pipe of a resin, a metal, a glass, or a combination thereof, according to the purpose.

[0115] There are no particular limitations on the shape or supply method of the gas mixture supply unit 35, and known gas mixture supply units can be widely used. The shape of the nozzle 35a is not particularly limited, but it can be slit-shaped to ensure a more uniform laminar flow of the gas mixture 33. In this case, the length of the nozzle 35a in the longitudinal direction can be set to a sufficient length according to the shape of the substrate.

[0116] Furthermore, the mixed gas supply unit 35 is not particularly limited as long as it has sufficient stability with the raw material solution 21 to be used or the operating temperature, and can be made of resin, metal, glass or a combination of these materials depending on the purpose.

[0117] The shape of the exhaust unit 36 ​​is not particularly limited, and widely known exhaust units can be used. However, the exhaust port 36a is preferably an opening with a length equal to or greater than the length of the elongated section of the rectifier plate 101. This allows for better maintenance of the airflow of the mixture 33. Furthermore, the exhaust unit 36 ​​is not particularly limited as long as it has sufficient stability to the raw material solution 21 or the operating temperature, and can be made of resin, metal, glass, or a combination of these materials, depending on the purpose.

[0118] The exhaust volume of the exhaust unit 36 ​​can be adjusted appropriately according to the film-forming conditions, but in order to maintain the laminar flow of the mixed gas 33, it is preferable to set it to about 70% to 150% of the flow rate of the mixed gas 33, and more preferably to set it to about 80% to 130%. Furthermore, as clearly demonstrated in the example of the rectification mechanism of the present invention described later, when the exhaust volume is low relative to the flow rate of the mixed gas, the mixed gas is directly exhausted to the exhaust unit side. In addition, when the exhaust volume is high relative to the flow rate of the mixed gas, differential atmospheric air flows in from the mixed gas supply unit side along with the mixed gas. Therefore, under any circumstances, the airflow of the mixed gas 33 flowing in the space 31 is maintained without turbulence.

[0119] In addition, Figure 1 The diagram shows the configuration in which the mixed gas 33 is discharged horizontally from the nozzle 35a configured in the horizontal direction and from the exhaust port 36a configured in the horizontal direction. However, the film-forming apparatus that can be used in the film-forming method of the present invention is not limited to this. The nozzle 35a and the exhaust port 36a can be configured such that the ejection direction and / or exhaust direction form any angle with respect to the stage 32 from the horizontal direction to the vertical direction.

[0120] (Configuration example)

[0121] Next, refer to Figures 1-6 Several configuration examples of the steps of forming a film on a substrate and venting using an venting unit in the film-forming method of the present invention will be described.

[0122] First, the passage plate is arranged on the base 34 in a manner facing the base 34 across the space 31. As the passage plate, for example, a plate like Figure 2 The passage plate 102 that is a part of the rectifying plate 101 as shown in the representative example.

[0123] In the step of forming a film on the base and the step of exhausting with the exhaust unit, as shown in Figure 1 The mixed gas 33 formed in the space 31 on the base 34 flows linearly from the mixed gas supply unit 35 toward the exhaust unit 36 in a manner along at least a part of the main surface of the base 34.

[0124] Further, a convex portion 103 is formed in a part of the passage plate 102 and / or a part of the stage 32 in a manner to shield the mixed gas flow 33 from deviating from the direction from the mixed gas supply unit 35 toward the exhaust unit 36.

[0125] The rectifying plate including the passage plate in the representative example, and the rectifying mechanism including the rectifying plate are shown in Figure 2 Figure 2 The rectifying mechanism 100 shown in the representative example includes the rectifying plate 101 including the passage plate 102 and the convex portion 103. The convex portion 103 is arranged in parallel with the outer edge portion of the passage plate 102, and the mixed gas 33 of the raw material mist and the carrier gas flows in the length direction of the convex portion 103 in the region sandwiched by the convex portion 103.

[0126] In addition, as exemplified in the latter section with reference to Figure 3 and Figure 4 The passage plate 102 and the convex portion 103 included in the rectifying mechanism 100 are described in detail in a manner that the gap having a width d2 smaller than the shortest distance d1 in the space 31 between the passage plate 102 and the base 34 is formed, and the film formation and the exhaust are performed.

[0127] By performing the film formation and the exhaust in this kind of arrangement, the flow of the mixed gas 33 can be suppressed from being disturbed, and thus, a high-quality film in which the attachment of surface defects or foreign matters is significantly reduced can be manufactured with high productivity.

[0128] The shape of the passage plate 102 is not particularly limited, and the main surface thereof can be polygonal, circular, elliptical, or all shapes other than these. In addition, the bottom portion of the passage plate 102 can be flat at least, and can be a smooth surface, or a processed surface such as a sandblasted surface for preventing the attachment of powder according to the purpose or the use.

[0129] ​The shape of the protrusions 103 is not particularly limited, and the cross section thereof can be polygonal, circular, elliptical, or all shapes other than these. In addition, it is only necessary that sufficient stability be obtained depending on the properties or temperature conditions of the raw material to be used. In this case, a metal such as aluminum or stainless steel can be used, and in the case of film formation at a higher temperature exceeding the heat resistance temperature of these metals or in the case of use of an acidic or basic raw material, an alloy such as hastelloy or a ceramic such as soda-lime glass, borosilicate glass, quartz, silicon carbide, or silicon nitride or aluminum nitride can be used.

[0130] The structure and the like of the other portions of the rectifying mechanism 100 are not particularly limited, and it is only necessary that sufficient stability be obtained depending on the properties or temperature conditions of the raw material to be used. In this case, a metal such as aluminum or stainless steel can be used, and in the case of film formation at a higher temperature exceeding the heat resistance temperature of these metals or in the case of use of an acidic or basic raw material, an alloy such as hastelloy or a ceramic such as soda-lime glass, borosilicate glass, quartz, silicon carbide, or silicon nitride or aluminum nitride can be used.

[0131] Figure 3 is a schematic side view showing a representative configuration of the passage plate, the protrusions, and the stage in the film formation method of the present application when the rectifying plate 101 shown in Figure 2 is used. Figure 4 is another side view of the configuration shown in Figure 3 .

[0132] Figure 3 is a view showing an example of the configuration in the film formation section 30 shown in Figure 1 , and shows a side view of the rectifying mechanism 100 in the gas flow direction of the mixed gas 33. Figure 4 is another side view of the rectifying mechanism 100 shown in Figure 3 , and shows a side view of the rectifying mechanism 100 in the direction perpendicular to the flow of the mixed gas 33.

[0133] Figure 3 and Figure 4 the rectifying plate 101 shown in Figure 2 has the passage plate 102 and the protrusions 103 in the same way as the rectifying plate 101 shown in Figure 3 , the protrusions 103 are formed on the left and right end portions 104 of the passage plate 102, respectively. Each of the protrusions 103 is formed in parallel with the gas flow direction of the mixed gas 33 in Figure 4 . Further, in Figure 4 , one of the protrusions 103 is shown at the frontmost position, and the other protrusion, which is not shown in Figure 4 , is located at the backmost position.

[0134] Figure 3 and Figure 4The rectifying mechanism 100 shown includes a passage plate 102, a convex portion 103, and a portion 32a of the stage 32 facing the convex portion 103.

[0135] The rectifying plate 101 forms a space 31 between the surface of the passage plate 102 and the surface of the base 34, and is disposed in a manner that fixes the shortest distance dl between the surface of the passage plate 102 and the surface of the base 34 in the space 31. In addition, the convex portion 103 is disposed in a manner that fixes the shortest distance (width) d2 of the gap 37 between the lower end of the convex portion 103 and the surface of the stage 32. As shown in FIG. 1, the space 31 and the gap 37 are continuous. Figure 3

[0136] Figure 3 In addition, as shown in FIG. 1, the rectifying mechanism 100 shown is disposed in a manner that the shortest distance dl between the surface of the passage plate 102 and the surface of the base 34 is greater than the shortest distance d2 of the gap 37 between the lower end of the convex portion 103 and the surface of the stage 32. Figure 4

[0137] At this time, the passage plate 102 and the convex portion 103 are disposed in a manner that dl > d2. More preferably, they can be disposed in a manner that dl / d2 > 1.5, further preferably in a manner that dl / d2 > 2, and particularly preferably in a manner that dl / d2 > 3. The upper limit of dl / d2 is not particularly limited, and for example, it can be set to dl / d2 < 6. dl and d2 can be appropriately set according to the flow rate of the mixed gas to be supplied, but in the film forming method of the present application, generally, if dl is increased, there is a tendency for the yield of the raw material to decrease. Therefore, more specifically, dl can be set to 0.5 mm to 5 mm, and d2 can be set to 0.1 mm to 3 mm.

[0138] In the case where the shortest distance dl is equal to or less than the width d2, a part of the mixed gas 33 flows out from below the convex portion 103 to the outside, or the outside gas flows into the gas stream of the mixed gas 33, whereby not only the gas stream of the mixed gas 33 is disturbed, and the formation of a uniform film is hindered, but also particles adhere to the film formation surface and defects are formed.

[0139] The particles are fine particles that are separated from the solid components in the raw material mist, and further grown powders, or miscellaneous particles mixed from the outside gas. In addition, as the defects due to the adhesion of the particles, there are dislocations or cracks due to abnormal growth particles that grow with the particles as nuclei.

[0140] The particles are generally sub-micron size to sub-millimeter size, but for example, the quantitative evaluation of the shape or the number can be easily performed by a known method such as a detection method that combines scattered light measurement of light irradiated onto a substrate with image recognition of the light scattering site. More simply, it can also be evaluated as bright spots in the dark field of an optical microscope.

[0141] ​​In addition, the difference in level h between the upper surface of the stage 32 and the upper surface of the base 34 can be configured to be 0 mm or more and 1 mm or less. If the difference in level h is 1 mm or less, the generation of turbulence due to the step between the stage 32 and the base 34 can be sufficiently suppressed, and the generation of mist can be sufficiently suppressed to prevent the film thickness distribution from becoming large.

[0142] Therefore, in the placement portion 32d of the base 34 of the stage 32, a counterbore 32e in which the base 34 is accommodated can be provided according to the thickness of the base 34 or the conditions of film formation.

[0143] In Figure 3 and Figure 4 , an example in which the width d2 of the gap 37 includes the configuration of the convex portion 103 and the upper surface of a portion 32a of the stage 32 is shown, but the configuration by the film formation method of the present application is not limited thereto, and for example, as shown in Figure 5 , the convex portion 32b can also be formed on a portion of the stage 32, and a portion 103a of the side surface of the convex portion 103 formed on a portion of the rectifier plate 101 and a portion 32c of the side surface of the convex portion 32b of the stage 32 can be configured to form the gap 37 having the width d2. Further, 102 is a passage plate, and 34 is a base. In addition, 31 is a space formed between the base 34 and the passage plate 102, and the shortest distance between the base 34 and the passage plate 102 in the space is d1. The shortest distance d1 is larger than the width d2.

[0144] Figure 5 The rectification mechanism 100 shown in Figure 5 includes a convex portion 103 formed on a portion of the rectifier plate 101 and a portion of the stage 32 facing the convex portion 103.

[0145] In the above, an example in which the convex portion constituting the rectification mechanism 100 is provided to the rectifier plate 101 is shown, but the configuration by the film formation method of the present application is not limited thereto, and for example, as shown in Figure 6 , the configuration in which the convex portion 32b is formed only on the stage 32 side can be provided. In the case of the configuration, the rectifier plate 101 includes only the passage plate 102. Further, 34 is a base. In addition, 31 is a space formed between the base 34 and the passage plate 102, and the shortest distance between the base 34 and the passage plate 102 in the space is d1.

[0146] Figure 6The rectifying mechanism 100 shown includes a convex portion 32b formed on the stage 32 and a portion 101a of a rectifying plate 101 (passage plate 102) facing the convex portion 32b, with a gap 37 of width d2 therebetween. The width d2 is smaller than the shortest distance dl.

[0147] Figure 7 is a view of the structure as viewed from the rectifying plate 101 (passage plate 102) side. Figure 6 In addition, Figure 7 An example is shown in which a film is formed on the base 34 while moving the stage 32 in the arrow direction. In this case, the convex portion 32b can be provided so that the convex portion 32b and the passage plate 102 maintain Figure 6 the rectifying mechanism 100 shown.

[0148] The film forming apparatus that can be used in the film forming method of the present application can be variously modified.

[0149] For example, in Figure 1 , the mixed gas supply unit 35 is disposed separately from the exhaust unit 36 and the rectifying plate 101, but the film forming apparatus that can be used in the film forming method of the present application is not limited thereto, and the mixed gas supply unit 35 and / or the exhaust unit 36 can be, for example, integrally formed with the stage 32 or the rectifying plate 101.

[0150] Figure 8 is a view showing a form of the film forming section 30 in which the mixed gas supply unit 35 is integrally formed with the passage plate 102 and the exhaust unit 36 described in Figures 2-4 In the form of Figure 8 , the mixed gas 33 is ejected from the ejection port 35a connected to the passage plate 102 in the direction of the stage, and the rectifying mechanism including the passage plate 102 and the stage 32 becomes a horizontal gas flow, and is exhausted from the exhaust port 36a provided at the end of the passage plate disposed downward in the gas flow direction of the mixed gas 33.

[0151] The connection portion of the rectifying plate 101 (passage plate 102) and the ejection port 35a, and / or the connection portion of the rectifying plate 101 (passage plate 102) and the exhaust port 36a is preferably curved. If so, the gas flow of the mixed gas 33 can be made better.

[0152] In the form of Figure 8 , the stage 32 is disposed so that the film formation surface of the base 34 and the bottom surface of the mixed gas supply unit 35 are maintained parallel.

[0153] The structure of the stage 32 is not particularly limited, and in addition, it is only necessary to have sufficient stability in accordance with the properties or temperature conditions of the raw material to be used. In this case, a metal such as aluminum or stainless steel can be used, and in the case of film formation at a higher temperature exceeding the heat resistance temperature of these metals or in the case of use of an acidic or basic raw material, an alloy such as Hastelloy or a ceramic such as soda-lime glass, borosilicate glass, quartz, silicon carbide, or silicon nitride or aluminum nitride can be used.

[0154] In addition, although not shown in the drawings, the film formation section 30 can further include a known heating unit such as a resistance heating heater or a lamp heater to heat the base 34. In this case, the heater can be built into the stage 32, for example, or can be provided outside the stage 32. In addition, the stage 32 can include a mechanism for holding the base 34. In this case, a known base holding method such as a vacuum chuck, a mechanical clamp, or an electrostatic chuck can be applied. In addition, within the scope, the stage 32 can further include a rotation mechanism that rotates the base 34 in the horizontal direction.

[0155] The base 34 is not particularly limited as long as it can support the formed film. The material of the base 34 is also not particularly limited and can be a known material, an organic compound, or an inorganic compound. For example, mention can be made of poly sulfone, poly ether sulfone, polyphenylene sulfide, poly ether ether ketone, polyimide, poly ether imide, a fluororesin, a metal such as iron or aluminum, stainless steel, gold, silicon, sapphire, quartz, glass, calcium carbonate, lithium tantalate, lithium niobate, gallium oxide, SiC, ZnO, GaN, and the like, but it is not limited thereto. As the shape of the base, mention can be made of a plate shape such as a flat plate or a circular plate, a fiber shape, a rod shape, a cylindrical shape, a prismatic shape, a tubular shape, a spiral shape, a spherical shape, a ring shape, and the like, and it can be any one of them. In particular, in the case where the base is a plate-shaped body, it is not particularly limited in the present application, but it is appropriate to use a plate-shaped body having an area of 5 cm 2 More preferably, 10 cm 2 More preferably, 10 cm 2 More preferably, 10 cm

[0156] In addition, in the film formation method of the present application, the base 34 and the rectifier plate 101 can be film-formed in a state where they face each other and are stationary at a prescribed position, or can include a moving unit (not shown) or a rotating unit (not shown) that changes the relative position with the base 34 in the horizontal direction. By including the moving unit or the rotating unit, the thickness distribution of the film to be formed can be made more favorable, and in addition, a large-diameter base or a long base can be film-formed.

[0157] The moving unit can be a reciprocating mechanism in a horizontal uniaxial direction. The moving speed in this uniaxial direction can be adjusted appropriately according to the purpose, but can be set from 0.1 mm / s to 100 mm / s, more preferably from 1 mm / s or more but less than 30 mm / s. If it is 1 mm / s or more, film formation can be prevented from becoming a rate limiter for the reaction, ensuring sufficient yield of the raw materials and reducing the chance of abnormal reactions. If it is 100 mm / s or less, the mixed gas 33 can adequately follow the moving motion, achieving excellent film thickness distribution. Furthermore, the rotational speed during rotation is not particularly limited as long as it does not generate turbulence in the mixed gas 33, but generally can be from 1° per second to 180° per second.

[0158] In addition, Figure 1 In the shown configuration, the rectifier plate 101 is positioned above the stage 32, and the film-forming surface of the substrate 34 is facing upwards for film formation. However, the film-forming apparatus used in the film-forming method of the present invention is not limited to this configuration. It may also be configured such that the rectifier plate 101 is positioned below the stage 32, and the film-forming surface of the substrate 34 is facing downwards for film formation.

[0159] [Membrane forming device]

[0160] The film-forming apparatus described above with reference to the accompanying drawings is an example of the film-forming apparatus of the present invention.

[0161] Right now, Figures 1-8 The film-forming apparatus 1 shown includes: an atomizing device 20 which is an atomizing unit for atomizing a raw material solution 21 to form a raw material mist 22; a carrier gas supply unit 10 which is a supply unit for supplying a carrier gas 11 for conveying the raw material mist 22; a stage 32 for placing a substrate 34; a mixed gas supply unit 35 for supplying a mixed gas 23 containing the raw material mist 22 and the carrier gas 11 to the surface of the substrate 34; a channel plate 102 disposed on the substrate 34 facing the substrate 34 across a space 31; an exhaust unit 36 ​​for exhausting the mixed gas 33 in the space 31; and a protrusion 103 formed on a part of the channel plate 102 and / or a protrusion 32b formed on a part of the stage 32 in such a way as to block the airflow of the mixed gas 33 from leaving the direction from the mixed gas supply unit 35 toward the exhaust unit 36.

[0162] Additionally, in the film-forming apparatus 1, such as Figures 3-6 As shown, the channel plate 102 and the protrusions 103 and / or 32b are configured to form a gap 37 with a width d2 that is smaller than the shortest distance d1 in the space 31 between the channel plate 102 and the substrate 34.

[0163] By performing film formation and exhaust by using such a film formation apparatus 1, the flow of the mixed gas 33 can be suppressed from being disturbed for the reasons described above, and thus a high-quality film in which the attachment of surface defects or foreign matter is significantly reduced can be produced with high productivity.

[0164] Details of examples of the film formation apparatus will be described with reference to the foregoing description related to Figures 1-8 .

[0165] In particular, in the film formation apparatus 1, the passage plate 102, the protrusion 103, and / or the protrusion 32b and the stage 32 can constitute the flow regulation mechanism 100 as described above. Specifically, in the example of the configuration shown in Figure 3 and Figure 4 , the flow regulation mechanism 100 includes the passage plate 102, the protrusion 103, and a portion 32a of the stage 32 facing the protrusion 103. In the example of the configuration shown in Figure 5 , the flow regulation mechanism 100 includes the protrusion 32b formed on a portion of the stage 32, a portion of the flow regulation plate 101 (passage plate 102) facing the protrusion 32b, the protrusion 103 formed on a portion of the flow regulation plate 101 (passage plate 102), and a portion of the stage 32 facing the protrusion 103. In the example of the configuration shown in Figure 6 , the flow regulation mechanism 100 includes the protrusion 32b formed on the stage 32 and a portion 101a of the flow regulation plate 101 (passage plate 102) facing the protrusion 32b, and includes a gap 37 having a width d2 therebetween.

[0166] It can also be said that the exhaust unit 36 is connected to the flow regulation mechanism 100.

[0167] In the film formation apparatus 1 shown in Figure 1 , the carrier gas supply portion 10 as a supply unit of carrier gas conveys the carrier gas 11 to the atomization device 20 as an atomization unit through the carrier gas pipe 12. In addition, in the film formation apparatus 1 shown in Figure 1 , the mixed gas supply unit 35 supplies the mixed gas 23 in which the raw material mist 22 and the carrier gas 11 are mixed to the surface of the base 34 through the mist pipe 24.

[0168] In addition, as shown in Figures 3-6 , and Figure 8 , a counterbore 32e in which the base 34 is placed can be provided in the placement portion 32d of the base 34 of the stage 32 according to the thickness of the base 34 or the conditions of film formation. The base 34 is placed in the counterbore 32e. By providing such a counterbore 32e, the difference h in level between the upper surface of the stage 32 and the upper surface of the base 34 can be adjusted, and the generation of turbulence due to the step difference between the stage 32 and the base 34 can be sufficiently suppressed to thereby suppress the generation of particles, and in addition, the distribution of the generation of the mist can be sufficiently suppressed to prevent the film thickness distribution from becoming large.

[0169] In addition, the channel plate 102 and the protrusion 103 and / or the protrusion 32b are preferably arranged so that the shortest distance d1 is 1.5 times or more the width d2. If the film forming apparatus 1 is configured in this way, a higher quality film can be formed.

[0170] As described above, it is more preferable to arrange the channel plate 102 and the protrusion 103 and / or the protrusion 32b so that the shortest distance d1 is 2 times or more the width d2, and it is particularly preferable to arrange the channel plate 102 and the protrusion 103 and / or the protrusion 32b so that the shortest distance d1 is 3 times or more the width d2.

[0171] The protrusion 103 can be formed on a portion of the channel plate 102.

[0172] If the film forming apparatus 1 is configured in this way, a film forming apparatus that can more easily and uniformly form a high quality film can be produced.

[0173] In addition, the protrusion 32b can be formed on a portion of the stage 32.

[0174] If the film forming apparatus 1 is configured in this way, a film forming apparatus that can more easily and uniformly form a high quality film can be produced.

[0175] In another aspect, Figures 1-8 The film forming apparatus 1 illustrated can also be referred to as a film forming system. As Figures 1-8 The film forming apparatus 1 of the film forming system illustrated includes an atomization device 20 that atomizes the raw material solution 21 to form a raw material mist 22, a mechanism 40 that mixes the raw material mist 22 with the carrier gas 11 to form a mixed gas (including the carrier gas supply portion 10 and the atomization device 20), a stage 32 on which a base 34 is placed, a film forming portion 30 that supplies the mixed gas 33 from a mixed gas supply unit 35 to the base 34 and performs film formation on the base 34, an exhaust unit 36 that exhausts the mixed gas 33 after film formation, a channel plate 102 arranged on the base 34 so as to face the base 34 across a space 31, and a protrusion 103 formed on a portion of the channel plate 102 and / or a protrusion 32b formed on a portion of the stage 32 so as to shield the flow of the mixed gas 33 from deviating from the direction in which the mixed gas 33 is supplied from the mixed gas supply unit 35 toward the exhaust unit 36. Furthermore, the channel plate 102 and the protrusion 103 and / or the protrusion 32b are arranged so as to form a gap 37 having a width d2 that is smaller than the shortest distance d1 in the space 31 between the channel plate 102 and the base 34. The film forming system can also include the film forming apparatus 1 and the base.

[0176] Alternatively, Figures 1-8The film formation apparatus 1 shown as a film formation system includes an atomization apparatus 20 as an atomization unit that atomizes a raw material solution 21 to form a raw material mist 22, a carrier gas supply portion 10 as a supply unit of a carrier gas 11 that carries the raw material mist 22, a substrate 34, a stage 32 on which the substrate 34 is placed, a mixed gas supply unit 35 that supplies a mixed gas 23 in which the raw material mist 22 and the carrier gas 11 are mixed to the surface of the substrate 34, a passage plate 102 that is disposed on the substrate 34 in a manner facing the substrate 34 across a space 31, an exhaust unit 36 that exhausts the mixed gas 33 in the space 31, and a convex portion 103 that is formed in a portion of the passage plate 102 in a manner to block the flow of the mixed gas 33 from the mixed gas supply unit 35 toward the exhaust unit 36 and / or a convex portion 32b that is formed in a portion of the stage 32.

[0177] [Stack]

[0178] In Figure 9 a schematic cross-sectional view showing an example of a stack according to the present application is shown.

[0179] Figure 1 The stack 39 shown includes the substrate 34 and the α-Ga2O3 film 38 that is directly or indirectly stacked on the substrate 34.

[0180] The density of particles having a diameter of 0.5 μm or more on the main surface of the stack 39 is 9 per 10 cm 2 Hereinafter.

[0181] Such a stack 39 can have a high-quality α-Ga2O3 film 38 in which particle adhesion is suppressed.

[0182] The smaller the density of particles having a diameter of 0.5 μm or more on the main surface of the stack 39, the more preferable it is, and for example, it can be set to 1 per 10 cm 2 Hereinafter.

[0183] The stack 39 according to the present application can be obtained, for example, by the film formation method according to the present application.

[0184] The area of the main surface of the substrate 34 can be set to 5 cm 2 Hereinafter.

[0185] In the present application, even if the area of the main surface of the substrate 34 is 5 cm 2 Hereinafter, a high-quality α-Ga2O3 film in which particle adhesion is suppressed can be obtained.

[0186] The upper limit of the area of the main surface of the substrate 34 is not particularly limited, but can be set to 900 cm2 The following.

[0187] [Examples]

[0188] The present application will be specifically described below using examples and comparative examples, but the present application is not limited thereto.

[0189] (Example 1)

[0190] In Figure 1 A rectifying mechanism was configured as described with reference to Figure 3 and Figure 4 and film formation of α-gallium oxide was performed.

[0191] For the mixed gas supply unit and the rectifying plate (channel plate), an aluminum member on which an alumina treatment was performed on the surface was used, and a SiC heating plate in which a resistance heating heater was built-in was used as the stage. Here, the shortest distance (width) d2 of the gap between the convex portion of the rectifying plate and the stage was set to 2 mm, and the shortest distance dl of the channel plate of the rectifying plate and the surface of the substrate described later was set to 3 mm.

[0192] For the carrier gas supply, a gas cylinder filled with nitrogen was used. The gas cylinder was connected to the atomization device by a polyurethane resin pipe, and the atomization device was connected to the mixed gas supply unit by a quartz pipe.

[0193] As the raw material solution, a 0.02 mol / L solution of gallium acetylacetonate dissolved in a dilute hydrochloric acid aqueous solution in which 1% of a 34% hydrochloric acid was added in terms of volume ratio was prepared, the solution was stirred for 60 minutes by a stirrer, and the solution was filled into the atomization device. For the atomization device, a device including two ultrasonic vibration plates (frequency 2.4 MHz) was used.

[0194] Next, a c-plane sapphire substrate having a thickness of 0.65 mm and a diameter of 4 inches (about 10 cm) was set on the stage, and heating was performed so that the substrate temperature became 400°C. At this time, the difference in height between the upper surface of the stage and the surface of the substrate was 0.2 mm.

[0195] Next, the raw material solution was atomized (atomized) by propagating ultrasonic vibration in the atomization device by water using the ultrasonic vibration plates.

[0196] Next, nitrogen was supplied to the raw material container at a flow rate of 25 L / minute to supply a mixed gas of mist and nitrogen to the mixed gas supply unit, and the exhaust flow rate was set to 28 L / minute to perform exhaust. Further, during this period, the stage was moved horizontally so that the ejection port of the mixed gas supply unit passed over the substrate evenly, and film formation was performed for 60 minutes.

[0197] Immediately thereafter, the supply of nitrogen gas was stopped, and the supply of the mixed gas to the mixed gas supply unit was stopped.

[0198] The crystalline layer of the fabricated laminate showed a peak at 2θ = 40.3° in X-ray diffraction measurement, and thus α-phase Ga2O3 was confirmed.

[0199] Thereafter, the film thickness of the fabricated film was measured at 25 points in-plane by light reflectance analysis. The value obtained by dividing the difference between the maximum value and the minimum value of the measured values by twice the average value was taken as the film thickness distribution. In addition, the density of particles (0.5 μm or more in diameter) on the film was evaluated using a substrate inspection machine (KLA candela-CS10). Furthermore, the crystalline orientation of the film was evaluated using the rocking curve half-value width of an X-ray diffractometer (XRD) (Rigaku SmartLab).

[0200] (Example 2)

[0201] In the configuration of the rectifying mechanism shown in Figure 3 and Figure 4 , the shortest distance d1 was set to 3 mm, the width d2 was set to 0.5 mm, and otherwise, the film formation of α-gallium oxide was performed in the same manner as in Example 1.

[0202] The crystalline layer of the fabricated laminate showed a peak at 2θ = 40.3° in X-ray diffraction measurement, and thus α-phase Ga2O3 was confirmed.

[0203] Thereafter, the film was evaluated in the same manner as in Example 1.

[0204] (Comparative Example 1)

[0205] In the configuration of the rectifying mechanism shown in Figure 3 and Figure 4 , the shortest distance d1 was set to 3 mm, the width d2 was set to 3 mm, and otherwise, the film formation of α-gallium oxide was performed in the same manner as in Example 1.

[0206] The crystalline layer of the fabricated laminate showed a peak at 2θ = 40.3° in X-ray diffraction measurement, and thus α-phase Ga2O3 was confirmed.

[0207] Thereafter, the film was evaluated in the same manner as in Example 1.

[0208] (Example 3)

[0209] In the film formation apparatus shown in Figure 1 , the film formation was performed in the same manner as in Example 1. Figure 5The rectifying mechanism was configured as described, and in addition, the film of α-gallium oxide was formed in the same manner as in Example 1. At this time, the difference in height between the upper surface of the stage and the surface of the substrate was 0.2 mm.

[0210] The crystalline layer of the fabricated laminate showed a peak at 2θ = 40.3° in X-ray diffraction measurement, and thus the Ga2O3 of the α phase was confirmed.

[0211] Thereafter, the evaluation of the film was performed in the same manner as in Example 1.

[0212] (Comparative Example 2)

[0213] In the configuration of the rectifying mechanism shown in Figure 5 The film of α-gallium oxide was formed in the same manner as in Example 3, except that the shortest distance dl was set to 3 mm and the width d2 was set to 3 mm.

[0214] The crystalline layer of the fabricated laminate showed a peak at 2θ = 40.3° in X-ray diffraction measurement, and thus the Ga2O3 of the α phase was confirmed.

[0215] Thereafter, the evaluation of the film was performed in the same manner as in Example 1.

[0216] (Comparative Example 3)

[0217] In the configuration of the rectifying mechanism shown in Figure 5 The film of α-gallium oxide was formed in the same manner as in Example 3, except that the shortest distance dl was set to 3 mm, the width d2 was set to 3 mm, and the difference in height between the upper surface of the stage and the surface of the substrate was set to 1.2 mm.

[0218] [Table 1]

[0219]

[0220] Table 1 is the evaluation results of Example 1 to Example 3 and Comparative Example 1 to Comparative Example 3. In any case, the formed film was α-Ga2O3, but the results of Example 1 to Example 3 showed that, compared to Comparative Example 1 to Comparative Example 3, the film thickness distribution and the half-value width of the rocking curve were improved, and the particle density was greatly reduced.

[0221] According to the results, it was found that, according to the present application, a film production method capable of producing a film of high quality and uniformity compared to the related art can be provided.

[0222] Furthermore, the present application is not limited to the described embodiments. The embodiments are illustrative, and embodiments having substantially the same structure as and exerting the same effects as the technical ideas described in the claims of the present application are included in the technical scope of the present application.

Claims

1. A film production method characterized by comprising: The method includes: a step of atomizing a raw material solution to form a raw material mist; a step of mixing the raw material mist with a carrier gas to form a mixed gas; a step of placing a substrate on a stage; a step of supplying the mixed gas from a mixed gas supply unit to the substrate and performing film formation on the substrate; a step of exhausting the mixed gas after the film formation by an exhaust unit; in the step of performing film formation on the substrate and the step of exhausting by the exhaust unit, a channel plate is arranged on the substrate so as to face the substrate across a space, a mixed gas flow in which the mixed gas linearly flows from the mixed gas supply unit toward the exhaust unit along at least a portion of a main surface of the substrate is formed in the space on the substrate, a protrusion is formed in a portion of the channel plate and / or a portion of the stage so as to block the mixed gas flow from deviating from a direction from the mixed gas supply unit toward the exhaust unit, the channel plate and the protrusion are arranged so as to form a gap having a width d2 smaller than a shortest distance d1 in the space between the channel plate and the substrate, and the film formation and the exhaust are performed.

2. The film production method according to claim 1, wherein The step of placing the substrate on the stage is performed so that a difference in height between an upper surface of the stage and an upper surface of the substrate is 1 mm or less.

3. The film production method according to claim 1, wherein The channel plate and the protrusion are arranged so that the shortest distance d1 is 1.5 times or more of the width d2.

4. The film production method according to claim 1, wherein The channel plate and the protrusion are arranged so that the shortest distance d1 is 2 times or more of the width d2.

5. The film production method according to claim 1, wherein The protrusion is formed in a portion of the channel plate.

6. The film production method according to any one of claims 1 to 5, characterized by, The protrusion is formed in a portion of the stage.

7. A film production apparatus, characterized by comprising: The method includes: a misting unit that atomizes a raw material solution to form a raw material mist; a carrier gas supply unit that carries the raw material mist; a stage that places a substrate; a mixed gas supply unit that supplies a mixed gas in which the raw material mist and the carrier gas are mixed to a surface of the substrate; a channel plate that is arranged on the substrate so as to face the substrate across a space; an exhaust unit that exhausts the mixed gas in the space; and a protrusion that is formed in a portion of the channel plate and / or a portion of the stage so as to block a flow of the mixed gas from deviating from a direction from the mixed gas supply unit toward the exhaust unit, and the channel plate and the protrusion are arranged so as to form a gap having a width d2 smaller than a shortest distance d1 in the space between the channel plate and the substrate. The stage is provided with a pocket hole that accommodates the substrate in a substrate placement portion.

8. The film production apparatus according to claim 7, wherein The channel plate and the protrusion are arranged so that the shortest distance d1 is 1.5 times or more of the width d2.

9. The film production apparatus according to claim 7, wherein The channel plate and the protrusion are arranged so that the shortest distance d1 is 2 times or more of the width d2.

10. The film production apparatus according to claim 7, wherein The protrusion is formed in a portion of the channel plate.

11. The film production apparatus according to claim 7, wherein The protrusion is formed in a portion of the stage.

12. The film production apparatus according to any one of claims 7 to 11, wherein ​

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