Inner lead bonding apparatus and inner lead bonding method

Abstract

The present application provides an inner lead bonding apparatus and method. The inner lead bonding apparatus includes a carrier platform, a press head, a temperature control module, an image acquisition module and a processor. The carrier platform is used to carry a flexible package tape having a plurality of package units. Each package unit has a plurality of inner leads located in a chip bonding area. The plurality of inner leads has a total pitch in a direction parallel to a long side of the chip bonding area. The press head is used to receive a chip, move towards the carrier platform and apply pressure to dispose the chip in the chip bonding area, and a plurality of bumps of the chip are correspondingly bonded with the plurality of inner leads. The temperature control module is used to adjust a temperature of the carrier platform to a bonding temperature. The image acquisition module is used to acquire an image of the chip bonding area. The processor is coupled to the image acquisition module to obtain a reference distance corresponding to the total pitch according to the image, and determine the bonding temperature as a preset temperature value or a compensated temperature after operation and comparison of the reference distance.

Description

Technical Field

[0001] This invention relates to an internal lead bonding device and an internal lead bonding method. Background Technology

[0002] In existing technologies, chip packaging using chip-on-film (COF) technology involves using a roll of flexible packaging tape containing multiple packaging units, transported reel to reel, to sequentially place the chip onto each of the packaging units. Specifically, the active surface of the chip has multiple bumps, and each packaging unit of the flexible packaging tape contains multiple circuits. Each circuit has internal leads for bonding to the bumps, a process known as inner lead bonding (ILB). Current ILB processes typically employ thermal compression to achieve eutectic bonding between the chip bumps and the internal leads, thus establishing an electrical connection.

[0003] Figure 8 These are schematic diagrams illustrating internal lead bonding in three different scenarios according to existing internal lead bonding methods. It is worth noting that due to limitations in the fabrication capabilities (e.g., etching capabilities) of flexible package tapes, the internal leads of these package units with the same design within the same flexible package tape may exhibit varying degrees of positional offset after actual fabrication. This results in a difference in the total spacing (e.g., the distance between the two outermost long-side internal leads) of the multiple long-side internal leads arranged along the long side of the chip bonding area. Please refer to... Figure 8 In current processes, the bonding temperature for the inner leads of the same roll of product is set to the same value. However, under the same bonding temperature setting, when the total spacing L1 of the long side inner leads 12 meets the predetermined design range (such as...), Figure 8 As shown in (a), the positions where each long side inner lead 12 engages with the corresponding bump 22 will be at predetermined engagement positions, thus forming a good contact with the bump 22. When the total spacing L2 of the long side inner leads 12 is small (e.g., Figure 8 As shown in (b), the positions where each long-side inner lead 12 engages with the corresponding bump 22 will be recessed from the predetermined engagement position (i.e., the long-side inner lead 12 is offset towards the center of the chip 20). When the total spacing L3 of the long-side inner leads 12 is large (e.g., Figure 8As shown in (c), the positions where the inner leads 12 on each long side are joined to the corresponding bumps 22 are wider than the predetermined joining positions (i.e., the inner leads 12 on the long side are offset to both sides of the chip 20). If the offset of the inner leads on the long side exceeds the specifications, it may cause electrical abnormalities or failures in the package structure. In such cases, it is difficult for multiple package units of the entire roll of flexible package tape to achieve consistent and stable inner lead bonding quality, making it impossible to effectively improve the manufacturing yield. Summary of the Invention

[0004] This invention relates to an internal lead bonding device and an internal lead bonding method, which enables multiple packaging units of flexible packaging tape to maintain consistent and stable internal lead bonding quality.

[0005] According to an embodiment of the present invention, an internal lead bonding apparatus includes a carrier platform, a pressing head, a temperature control module, an image acquisition module, and a processor. The carrier platform carries a flexible packaging tape, wherein the flexible packaging tape has multiple packaging units. Each packaging unit has a chip bonding area and multiple internal leads located within the chip bonding area. The multiple internal leads include multiple long-side internal leads arranged along two opposite long sides of the chip bonding area, and the multiple long-side internal leads have a total spacing in a direction parallel to the two long sides. Each packaging unit is sequentially disposed on the carrier platform, and the carrier platform at least corresponds to the chip bonding area of ​​the packaging unit disposed on the carrier platform. The pressing head receives the chip and is movably disposed above the carrier platform and corresponds to the packaging unit disposed on the carrier platform. The pressing head moves toward the carrier platform and applies pressure to place the chip within the chip bonding area of ​​the packaging unit, and multiple bumps on the chip correspondingly engage with the multiple internal leads. The temperature control module adjusts the temperature of the carrier platform to a bonding temperature. The image acquisition module is movably disposed above the carrier platform and is used to acquire images of the chip bonding area of ​​the packaging unit disposed on the carrier platform. The processor is coupled to the image acquisition module to obtain the reference distance corresponding to the total spacing based on the image, and calculate the difference between the reference distance and the standard distance. Based on the difference, the bonding temperature of the bearing platform is determined and the temperature compensation value is calculated. When the absolute value of the difference is less than or equal to the preset difference, the bonding temperature is the preset temperature value. When the absolute value of the difference is greater than the preset difference, the bonding temperature is the sum of the preset temperature value and the temperature compensation value.

[0006] According to an embodiment of the present invention, an internal lead bonding method includes the following steps: A flexible packaging tape having multiple packaging units is conveyed, such that each packaging unit is sequentially arranged on a carrier platform, wherein each packaging unit has a chip bonding area and multiple internal leads located within the chip bonding area. The multiple internal leads include multiple long-side internal leads arranged along two opposite long sides of the chip bonding area, and the multiple long-side internal leads have a total spacing in a direction parallel to the two long sides. The carrier platform at least corresponds to the chip bonding area of ​​the packaging unit disposed on the carrier platform. A chip is picked up and placed on a bonding head; the chip has multiple bumps. An image of the chip bonding area of ​​the packaging unit disposed on the carrier platform is acquired. A reference distance corresponding to the total spacing is obtained based on the image. The difference between the reference distance and a standard distance is calculated. The bonding temperature of the carrier platform is determined based on the difference, and a temperature compensation value is calculated, wherein when the absolute value of the difference is less than or equal to a preset difference, the bonding temperature is a preset temperature value; when the absolute value of the difference is greater than the preset difference, the bonding temperature is the sum of the preset temperature value and the temperature compensation value. The temperature of the carrier platform is adjusted to the bonding temperature. Applying pressure to the bonding head causes the chip to be positioned within the chip bonding area of ​​the packaging unit configured on the carrier platform, and multiple bumps of the chip are correspondingly bonded to multiple internal leads.

[0007] Based on the above, the internal lead bonding apparatus and bonding method of the present invention adjust the bonding temperature of the support platform according to the total spacing of the inner leads on the long side of the packaging unit (corresponding to the reference distance of the inner leads on the long side). This configuration ensures that when the chip is bonded to multiple packaging units with different total spacing of the inner leads on the long side (corresponding to the reference distance of the inner leads on the long side), the offset of the bonding position between the inner leads of each packaging unit and the bumps of the chip can be maintained within an allowable range, and the yield of the internal lead bonding will not be affected by the outward or inward offset of the inner leads. Therefore, the internal lead bonding apparatus and bonding method of the present invention can maintain consistent and stable internal lead bonding quality among multiple packaging units of a whole roll of flexible packaging tape, thereby improving the overall manufacturing yield. Attached Figure Description

[0008] The accompanying drawings are included to further illustrate the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0009] Figure 1 This is a schematic diagram of an internal lead bonding device according to an embodiment of the present invention;

[0010] Figure 2 This is a partial schematic diagram of an internal lead bonding device according to an embodiment of the present invention;

[0011] Figure 3 This is a cross-sectional schematic diagram of the chip bonding inner leads according to an embodiment of the present invention;

[0012] Figure 4 This is a schematic diagram of the chip bonding area of ​​a packaging unit according to an embodiment of the present invention;

[0013] Figure 5 This is a schematic diagram of an image acquired by the image acquisition module of an internal lead bonding device according to an embodiment of the present invention;

[0014] Figure 6 This is a schematic diagram showing the relationship between the reference distance of the inner leads calculated for multiple packaging units and the bonding temperature of the carrier platform in an inner lead bonding method according to an embodiment of the present invention.

[0015] Figure 7 yes Figure 6 The diagram shows the reference distance of the inner lead, the bonding temperature of the bearing platform, and the offset of the inner lead in three different scenarios.

[0016] Figure 8 These are schematic diagrams of internal lead bonding in three different scenarios according to existing internal lead bonding methods.

[0017] Explanation of icon numbers

[0018] 12: Inner lead on the long side

[0019] 20: Chip

[0020] 22: Bump

[0021] 100: Internal lead bonding equipment

[0022] 110: Supporting Platform

[0023] 120: Press head

[0024] 130: Image Acquisition Module

[0025] 140: Temperature control module

[0026] 150: Processor

[0027] 160: Controller

[0028] 170; Conveying equipment

[0029] 172; Conveying track

[0030] 174, 176: Tape reel turntable

[0031] 180: Storage circuit

[0032] 200: Flexible Packaging Tape

[0033] 220: Packaging Unit

[0034] 221: Flexible substrate

[0035] 222: Route

[0036] 222a: Inner lead

[0037] 222a1: Inner lead on the long side

[0038] 222a2: Short side inner lead

[0039] 223: Solder mask layer

[0040] 300: Chip

[0041] 320: Bump

[0042] A1, A2: Positioning frames

[0043] C: Cartridge nozzle

[0044] C1, C2: Center point

[0045] D1, D2, D3, D4-1, D4-2, D4-3: Differences

[0046] D0: Preset difference

[0047] L, L1, L2, L3: Total spacing

[0048] Lr, Lr1, Lr2, Lr3, Lr4-1, Lr4-2, Lr4-3: Reference distance

[0049] Lr0: Standard distance

[0050] IM: Image

[0051] P1, P2, P3, P4: Boxes

[0052] R1: Chip bonding area

[0053] S0: Offset

[0054] T1, T2, T3, T4-1, T4-2, T4-3: Bonding temperature

[0055] T0, T0': Preset temperature values

[0056] Tc2, Tc3, Tc4-1, Tc4-2, Tc4-3: Temperature compensation values

[0057] Y1, Y2: Boxes

[0058] UL: Reference Distance Upper Limit

[0059] LL: Lower limit of reference distance

[0060] Wf: Chip Detailed Implementation

[0061] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element references are used in the drawings and description to denote the same or similar parts.

[0062] The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the accompanying drawings. The directional terms mentioned in the following embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting the present invention. Furthermore, in the following embodiments, the same or similar elements will be referred to by the same or similar reference numerals.

[0063] Figure 1 This is a schematic diagram of an internal lead bonding device according to an embodiment of the present invention. Figure 2 This is a partial schematic diagram of an internal lead bonding device according to an embodiment of the present invention. Figure 3 This is a cross-sectional schematic diagram of the chip bonding inner leads according to an embodiment of the present invention. Please also refer to... Figures 1 to 3 In some embodiments, the internal lead bonding apparatus 100 includes a carrier platform 110, a pressing head 120, an image acquisition module 130, a temperature control module 140, and a processor 150. In one embodiment, the carrier platform 110 can be used to carry a flexible packaging reel 200, wherein the flexible packaging reel 200 may have a plurality of packaging units 220 arranged adjacent to each other. Each packaging unit 220 may have a chip bonding area R1 for a chip 300 to be disposed therein. More specifically, in this embodiment, each packaging unit 220 may include a flexible substrate 221 and a plurality of lines 222 disposed on the flexible substrate 221, wherein each line 222 has an internal lead 222a, and these internal leads 222a of these lines 222 are located within the chip bonding area R1. That is, each packaging unit 220 may have a plurality of internal leads 222a located within the chip bonding area R1 for the chip 300 to be bonded thereto. Further, please refer to Figure 3 Each packaging unit 220 may further include a solder mask layer 223, which partially covers multiple lines 222 and exposes the chip bonding area R1 and these internal leads 222a. In one embodiment, the flexible substrate 221 may be an electrically insulating film, such as polyimide (PI), which has arbitrary bending flexibility to facilitate tape-and-roll transport.

[0064] Please refer to the following at the same time Figure 1 and Figure 3In one embodiment, multiple packaging units 220 of the flexible packaging tape 200 can be sequentially conveyed to the carrier platform 110 via a conveying device 170. For example, the conveying device 170 may include a conveying track 172 for carrying and conveying the flexible packaging tape 200 and two tape reels 174 and 176 respectively disposed at opposite ends of the conveying track 172. Thus, the two ends of the flexible packaging tape 200 can be wound onto the tape reels 174 and 176 respectively. By rotating the tape reels 174 and 176, the flexible packaging tape 200 is moved along the conveying track 172 by tension, so that each packaging unit 220 of the flexible packaging tape 200 is sequentially arranged on the carrier platform 110. In this embodiment, the carrier platform 110 at least corresponds to the chip bonding area R1 of the packaging unit 220 disposed on the carrier platform 110, so as to provide support for the chip bonding area R1 of the packaging unit 220 in the subsequent internal wire bonding process.

[0065] Next, the chip 300 can be picked up from the wafer Wf using, for example, a pick and place device (e.g., a die nozzle C), and placed on the bonding head 120. The method of picking up the chip 300 may include vacuum suction, but is not limited to this. The chip 300 has a plurality of bumps 320 corresponding to the inner leads 222a. For example, the bumps 320 may include electroplated bumps, and their material may include gold, copper, nickel, silver, or any combination thereof.

[0066] In some embodiments, the pressing head 120 is movably disposed above the support platform 110. Specifically, the position of the pressing head 120 may correspond to the packaging unit 220 disposed on the support platform 110. The pressing head 120 is used to receive the chip 300, and after receiving the chip 300, it moves toward the support platform 110 and applies pressure to place the chip 300 in the chip bonding area R1 of the packaging unit 220, and the plurality of bumps 320 on the chip 300 respectively engage with the plurality of inner leads 222a of the packaging unit 220.

[0067] Generally, the chip 300 is bonded to the inner lead 222a using a thermoforming method, for example. That is, the bonding head 120 is heated to a preset temperature (e.g., approximately 460°C to 480°C) and receives the chip 300. Then, the carrier platform 110 is heated to a preset bonding temperature (e.g., approximately 110°C to 150°C). Finally, the bonding head 120 applies pressure towards the carrier platform 110 to bond the bumps 320 on the chip 300 to the inner lead 222a. In some embodiments, the temperature control module 140 can be used to adjust the temperature of the carrier platform 110 to the bonding temperature. In one embodiment, the temperature control module 140 may be built into, for example, the carrier platform 110. Furthermore, the temperature control module 140 may include a temperature adjustment device such as a heater. With this configuration, the temperature control module 140 can heat the carrier platform 110 to a predetermined bonding temperature for inner lead bonding.

[0068] Figure 4 This is a schematic diagram of the chip bonding area of ​​a packaging unit according to an embodiment of the present invention. Figure 5 This is a schematic diagram of an image acquired by the image acquisition module of an internal lead bonding device according to an embodiment of the present invention. It should be noted that... Figure 4 The solder mask layer is presented using perspective drawing to more clearly show the structure beneath it. Please refer to... Figure 2 , Figure 4 and Figure 5 In some embodiments, the image acquisition module 130 is movably disposed above the carrier platform 110 and is used to acquire an image IM of the chip bonding region R1 of the packaging unit 220 configured on the carrier platform 110. Specifically, before using the pressing head 120 to place the chip 300 within the chip bonding region R1, the image acquisition module 130 may be moved above the carrier platform 110 to acquire an image IM of the chip bonding region R1 of the packaging unit 220. The image acquisition module 130 may, for example, target one or more regions (e.g., ...) of the chip bonding region R1. Figure 4 The positioning frames A1 and A2 shown are used to acquire images. In this embodiment, the area for acquiring the image may, for example, be located at the two corners of a diagonal line of the chip bonding area R1. In other words, the image IM acquired by the image acquisition module 130 may be as follows: Figure 4 The diagram shows positioning frames A1 and A2 located at two corners along a diagonal of the chip bonding area R1. Of course, this embodiment is merely illustrative, and the present invention does not limit the location or number of areas for image acquisition. Furthermore, the image IM (e.g., positioning frames A1 and A2) acquired by the image acquisition module 130 can, for example, serve as a reference for alignment during the inner lead bonding process.

[0069] In one embodiment, the image acquisition module 130 of the internal lead bonding device 100 may have multiple image acquisition devices, which may be respectively disposed at two corners on a diagonal of the corresponding chip bonding area R1, so as to simultaneously acquire images such as... Figure 5 The images IM of the two positioning frames A1 and A2 shown are illustrated. Of course, in other embodiments, the image acquisition module 130 may also have an image acquisition device that can move freely between the two positioning frames A1 and A2 to acquire images as shown below. Figure 5 The images IM of the two positioning frames A1 and A2 are shown. Of course, this embodiment is only used as an example, and the image acquisition module 130 can acquire one or more images of any position in the chip bonding area R1 according to actual needs.

[0070] Specifically, in this embodiment, the chip bonding area R1 of the packaging unit 220 corresponds to the chip 300 and has two opposing long sides and two opposing short sides. The plurality of inner leads 222a of the packaging unit 220 may include a plurality of long side inner leads 222a1 arranged adjacent to the two long sides and a plurality of short side inner leads 222a2 arranged adjacent to the two short sides.

[0071] In this embodiment, each positioning frame A1 and A2 in the image IM acquired by the image acquisition module 130 may include M long-side inner leads 222a1, and one edge of each positioning frame A1 and A2 is located between the Mth long-side inner lead 222a1 and the (M+1)th long-side inner lead 222a1, where M is greater than 1. Furthermore, each positioning frame A1 and A2 may also include N short-side inner leads 222a2, and another edge of each positioning frame A1 and A2 is located between the Nth short-side inner lead 222a2 and the (N+1)th short-side inner lead 222a2, where N is greater than 1. In other words, each positioning frame A1 and A2 may include at least two long-side inner leads 222a1 and at least two short-side inner leads 222a2. For example, such as... Figure 5As shown, in this embodiment, each positioning frame A1 and A2 includes 6 long-side inner leads 222a1 and 2 short-side inner leads 222a2, meaning M equals 6 and N equals 2. One edge of each positioning frame A1 and A2 (i.e., the edge parallel to the long-side inner lead 222a1) is located between the 6th long-side inner lead 222a1 and the 7th (6+1th) long-side inner lead 222a1, and the other edge of each positioning frame A1 and A2 (i.e., the edge parallel to the short-side inner lead 222a2) is located between the 2nd and 3rd (2+1th) short-side inner lead 222a2. In other words, each positioning frame A1 and A2 is limited to including only 6 long-side inner leads 222a1 and 2 short-side inner leads 222a2. It is worth mentioning that the number of long side inner leads 222a1 and short side inner leads 222a2 included in the positioning frame A1 may be the same as or different from the number of long side inner leads 222a1 and short side inner leads 222a2 included in the positioning frame A2, and the present invention does not impose any restrictions on this.

[0072] Please refer to the following at the same time Figure 1 , Figure 4 and Figure 5 In one embodiment, the plurality of long-side inner leads 222a1 have a total spacing L in the direction parallel to the two long sides of the chip bonding region R1, that is, the two outermost long-side inner leads 222a1 (e.g.) Figure 4 The distance between the inner leads 222a1 of the two long sides selected by boxes Y1 and Y2 in the image is parallel to the two long sides. In some embodiments, the processor 150 is coupled to the image acquisition module 130 to obtain a reference distance Lr corresponding to the total spacing L based on the image IM acquired by the image acquisition module 130. In one embodiment, the reference distance Lr is the distance between the center points C1 and C2 of the two positioning boxes A1 and A2 in the direction parallel to the two long sides. For example, in this embodiment, the processor 150 obtains the reference distance Lr based on the image IM acquired by the image acquisition module 130 in the positioning boxes A1 and A2 (e.g., ...). Figure 5As shown, the processor 150 obtains the center points C1 and C2 of two positioning frames A1 and A2 respectively, and calculates the distance between the center points C1 and C2 in the direction parallel to the long side to obtain the reference distance Lr. Since each positioning frame A1 and A2 is limited to only M long side inner leads 222a1 and N short side inner leads 222a2, and each positioning frame A1 and A2 is set to a fixed size, when the multiple long side inner leads 222a1 of the packaging unit 220 are offset outward to both sides (i.e., the total spacing L is larger), the positioning frames A1 and A2 obtained by the image acquisition module 130 will also move to both sides respectively. At this time, the reference distance Lr obtained by the processor 150 based on the image IM of the positioning frames A1 and A2 will also be larger. Conversely, when the multiple long side inner leads 222a1 of the packaging unit 220 are offset inward to the center (i.e., the total spacing L is smaller), the positioning frames A1 and A2 will also move towards the center respectively. At this time, the obtained reference distance Lr will also be smaller. Of course, the method used in this embodiment to obtain the reference distance Lr corresponding to the total spacing L of the inner lead 222a1 of the long side is only for illustrative purposes, and the present invention does not limit the method of obtaining the reference distance Lr corresponding to the total spacing L. In other embodiments, the processor 150 may also directly obtain the total spacing L and use this total spacing L for subsequent calculations.

[0073] Figure 6 This is a schematic diagram illustrating the relationship between the reference distance of the inner leads calculated for multiple package units and the bonding temperature of the carrier platform, according to an embodiment of the internal lead bonding method of the present invention. Please refer to... Figure 1 and Figure 6 , Figure 6 The multiple black dots represent multiple reference distances Lrn of the inner leads 222a1 of the long sides of the multiple package units 220 calculated by the processor 150, where n is a positive integer greater than zero, for example, n = 1, 2, 3, 4, ... (and so on). The processor 150 can calculate the difference Dn (i.e., Dn = Lrn - Lr0) between each reference distance Lrn and the standard distance Lr0 of the reference distance Lrn of the inner leads 222a1 of the long sides of these package units 220. Specifically, in this embodiment, the inner lead bonding device 100 may further have a storage circuit 180, which can be used to store standard (preset) size information of the package units 220 and / or the chip 300, for example, the standard distance Lr0 of the reference distance Lrn of the inner leads 222a1 of the long sides of these package units 220, which is the standard distance between the center points C1 and C2 of the two positioning frames A1 and A2 in the direction parallel to the long side. Thus, the processor 150 is coupled to the storage circuit 180 to read the standard distance Lr0 of the inner lead 222a1 of the long side of these package units 220, and compares it with the calculated reference distance Lrn of each package unit 220 to obtain the difference Dn between the two.

[0074] In one embodiment, when the absolute value of the difference Dn between the calculated reference distance Lrn and the standard distance Lr0 is less than or equal to a preset difference D0, it indicates that the difference between the reference distance Lrn and the standard distance Lr0 of the inner lead 222a1 of the long side of this packaging unit 220 is still within an acceptable range. The controller 160 of the coupled processor 150 can then control the temperature control module 140 to control the bonding temperature Tn of the carrier platform 110 to the preset temperature value T0. In this embodiment, this preset temperature value T0 can also be stored in the storage circuit 180. For example, such as... Figure 6 As shown in the embodiment of block P1, the absolute value of the difference D1 between the calculated reference distance Lr1 and the standard distance Lr0 of the inner lead 222a1 on the long side is less than the preset difference D0, that is, the reference distance Lr1 falls within the allowable range (i.e., between the upper limit of the reference distance UL and the lower limit of the reference distance LL). Therefore, the bonding temperature T1 of the bearing platform 110 is controlled at the preset temperature value T0.

[0075] In one embodiment, when the absolute value of the difference Dn is greater than the preset difference D0, it indicates that the difference between the reference distance Lrn and the standard distance Lr0 of the inner lead 222a1 of the long side of the package unit 220 has exceeded the allowable range (i.e., higher than the upper limit of the reference distance UL or lower than the lower limit of the reference distance LL). At this time, the processor 150 can calculate the temperature compensation value Tcn based on this difference Dn, and the controller 160 can then control the temperature control module 140 to set the bonding temperature Tn of the carrier platform 110 to the sum of the preset temperature value T0 and the temperature compensation value Tcn. For example, such as Figure 6 As shown in the embodiment of block P2, when the absolute value of the difference D2 is greater than the preset difference D0 and the difference D2 is negative, it means that the reference distance Lr2 of the inner lead 222a1 on the long side of the package unit 220 is less than the standard distance Lr0, and the difference between the two has exceeded the allowable range, that is, the reference distance Lr2 is lower than the allowable lower limit of the reference distance LL. In this case, if the bonding temperature of the carrier platform 110 is still controlled at the preset temperature value T0, it may cause the position of the inner lead 222a1 on the long side to be bonded to the corresponding bump 320 to be offset inward from the predetermined bonding position (i.e., offset towards the center of the chip 300). Therefore, the processor 150 will calculate a positive temperature compensation value Tc2 based on this difference D2, that is, adjust the bonding temperature T2 of the carrier platform 110 (the sum of the preset temperature value T0 and the temperature compensation value Tc2) to be higher than the preset temperature value T0. By increasing the bonding temperature T2 of the bearing platform 110, the amount of stretching of the flexible substrate 221 due to thermal expansion is increased, in order to compensate for the originally small reference distance Lr2 (corresponding to the total spacing L of the long side inner lead 222a1) on the flexible substrate 221.

[0076] Conversely, such as Figure 6As shown in the embodiment of block P3, when the absolute value of the difference D3 is greater than the preset difference D0 and this difference D3 is positive, it means that the reference distance Lr3 of the inner lead 222a1 on the long side of this package unit 220 is greater than the standard distance Lr0, and the difference between the two has exceeded the allowable range, that is, the reference distance Lr3 is higher than the allowable upper limit of the reference distance UL. In this case, if the bonding temperature of the carrier platform 110 is still controlled at the preset temperature value T0, it may cause the position of the inner lead 222a1 on the long side to be bonded to the corresponding bump 320 to be offset outward from the predetermined bonding position (i.e., offset to both sides of the chip 300). Therefore, the processor 150 will calculate a negative temperature compensation value Tc3 based on this difference D3, that is, adjust the bonding temperature T3 of the carrier platform 110 (the sum of the preset temperature value T0 and the temperature compensation value Tc3) to be lower than the preset temperature value T0. By lowering the bonding temperature T3 of the bearing platform 110, the amount of stretching of the flexible substrate 221 due to thermal expansion is reduced, thereby compensating for the originally excessive reference distance Lr3 (corresponding to the total spacing L of the long side inner lead 222a1) on the flexible substrate 221.

[0077] After the processor 150 obtains the bonding temperature Tn of the carrier platform 110 according to the above method and adjusts the temperature of the carrier platform 110 to the obtained bonding temperature Tn, the controller 160 coupled to the processor 150 can control the pressing head 120 to move toward the carrier platform 110 and apply pressure to the pressing head 120 so that the chip 300 is placed in the chip bonding area R1 of the packaging unit 220, and the bumps 320 of the chip 300 are correspondingly bonded to the inner lead 222a of the packaging unit 220.

[0078] Figure 7 yes Figure 6 The diagram illustrates the reference distance of the inner lead, the bonding temperature of the support platform, and the offset of the inner lead in three different scenarios. Specifically, Figure 7 It corresponds Figure 6 The diagram illustrates three different scenarios of the embodiments of blocks P1, P2, and P3. For example, please refer to... Figure 7For the three embodiments where the reference distance Lr1 of the long side inner lead 222a1 falls within the allowable range (box P1), the reference distance Lr2 of the long side inner lead 222a1 is less than the allowable lower limit of the reference distance LL (box P2), and the reference distance Lr3 of the long side inner lead 222a1 is greater than the allowable upper limit of the reference distance UL (box P3), the bonding temperature T1 of the bearing platform 110 is controlled at a preset temperature value T0, the bonding temperature T2 is adjusted to be higher than the preset temperature value T0, and the bonding temperature T3 is adjusted to be lower than the preset temperature value T0, respectively. Under such circumstances, the bonding position of the long side inner lead 222a1 measured after the inner lead 222a engages with the protrusion 320 in the three embodiments can have a relatively consistent offset S0, wherein the offset S0 can be an allowable offset range of the long side inner lead 222a1. Therefore, the internal lead bonding apparatus 100 and bonding method of the present invention can ensure that when the chip 300 is bonded to multiple packaging units 220 with different reference distances Lrn (corresponding to the total spacing L of the long side internal lead 222a1) with the long side internal lead 222a1, the offset of its internal lead 222a (especially the long side internal lead 222a1) after bonding the bump 320 can be maintained within an allowable range, and the yield of internal lead bonding will not be affected by the outward expansion or inward retraction of the internal lead 222a, so as to maintain a more consistent and stable internal lead bonding quality.

[0079] Please refer to again Figure 6 When the processor 150 compensates the bonding temperature Tn of the carrier platform 110 according to the above difference Dn (i.e., the bonding temperature is adjusted to be higher or lower than the preset temperature value T0), and the bonding head 120 makes the bump 320 of the chip 300 correspondingly bond with the inner lead 222a, the processor 150 will adjust the bonding temperature Tn of the carrier platform 110 back to the preset temperature value T0, and then proceed to bond the inner lead of the next packaging unit 220. However, in some embodiments, when the bonding temperature Tn of the carrier platform 110 is adjusted to the sum of a preset temperature value T0 and a temperature compensation value Tcn for X consecutive package units 220, especially when the temperature compensation values ​​Tcn of the X consecutive package units 220 are all positive (i.e., the bonding temperature is adjusted to be higher than the preset temperature value T0) or all negative (i.e., the bonding temperature is adjusted to be lower than the preset temperature value T0), the processor 150 calculates and changes the preset temperature value based on the bonding temperatures Tn of these X consecutive package units 220, for example, changing the preset temperature value to the average of the bonding temperatures Tn of these X consecutive package units 220. In one embodiment, X may be, for example, greater than or equal to 3. Then, the internal lead bonding of subsequent package units 220 is continued using this changed preset temperature value T0'. For example, as... Figure 6As shown in the embodiment of block P4, in block P4, the absolute values ​​of the differences D4-1, D4-2, and D4-3 between the reference distances Lr4-1, Lr4-2, and Lr4-3 of the inner leads 222a1 of the long sides of three consecutive packaging units 220 and the standard distance Lr0 are all greater than the preset difference D0, and these differences D4-1, D4-2, and D4-3 are all positive values. That is, the reference distances Lr4-1, Lr4-2, and Lr4-3 of the inner leads 222a1 of the long sides of three consecutive packaging units 220 are all greater than the standard distance Lr0. The upper limit of the permissible reference distance UL is set. Therefore, the processor 150 will calculate negative temperature compensation values ​​Tc4-1, Tc4-2, and Tc4-3 three times consecutively based on the magnitudes of these differences D4-1, D4-2, and D4-3. The temperature control module 140 will also adjust the temperature of the carrier platform 110 three times consecutively to bonding temperatures T4-1, T4-2, and T4-3 (the sum of the preset temperature T0 and the temperature compensation values ​​Tc4-1, Tc4-2, and Tc4-3) that are lower than the preset temperature T0. During the first two reductions in the temperature of the carrier platform 110 to bonding temperatures T4-1 and T4-2, the processor 150 will adjust the bonding temperature Tn of the carrier platform 110 back to the preset temperature T0 after completing the internal lead bonding process, and then proceed with the internal lead bonding of the next packaging unit 220. However, after the temperature of the carrier platform 110 is lowered to the bonding temperature T4-3 for the third time and the internal lead bonding process is completed, the reference distance Lrn (corresponding to the total spacing L of the long side internal leads) of the subsequent package unit 220 will be deemed to have changed in the same direction, that is, the reference distance Lrn of the long side internal leads 222a1 is greater than the allowable upper limit of reference distance UL. Therefore, the processor 150 changes the original preset temperature value T0 to the average of the bonding temperatures T4-1, T4-2, and T4-3 of the three package units 220 based on the bonding temperatures T4-1, T4-2, and T4-3 of the three package units 220. Afterwards, the processor 150 performs the internal lead bonding of the subsequent package unit 220 using this changed preset temperature value T0'.

[0080] In summary, the internal lead bonding equipment and method of the present invention adjust the bonding temperature of the carrier platform according to the total spacing of the inner leads on the long side of the packaging unit (corresponding to the reference distance of the inner leads on the long side). This configuration ensures that when the chip is bonded to multiple packaging units with different total spacing of the inner leads on the long side (corresponding to the reference distance of the inner leads on the long side), the offset of the bonding position between the inner leads of each packaging unit and the bumps of the chip can be maintained within an allowable range, and the yield of the internal lead bonding will not be affected by the outward or inward offset of the inner leads. Therefore, the internal lead bonding equipment and method of the present invention can maintain consistent and stable internal lead bonding quality among multiple packaging units of a whole roll of flexible packaging tape, thereby improving the overall manufacturing yield.

[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An internal lead bonding device, characterized in that, include: A carrier platform for carrying flexible packaging tape, wherein the flexible packaging tape has a plurality of packaging units, each packaging unit having a chip bonding area and a plurality of inner leads located within the chip bonding area, the plurality of inner leads including a plurality of long-side inner leads arranged along two opposite long sides of the chip bonding area and the plurality of long-side inner leads having a total spacing in a direction parallel to the two long sides, each packaging unit being sequentially disposed on the carrier platform, and the carrier platform at least corresponding to the chip bonding area of ​​the packaging unit disposed on the carrier platform; A pressing head is used to receive a chip and is movably disposed above the carrier platform and corresponds to the packaging unit disposed on the carrier platform. The pressing head is used to move toward the carrier platform and apply pressure to place the chip in the chip bonding area of ​​the packaging unit, and a plurality of bumps on the chip are correspondingly engaged with the plurality of inner leads. A temperature control module is used to adjust the temperature of the support platform to the engagement temperature; An image acquisition module is movably disposed above the carrier platform and is used to acquire an image of the chip bonding area of ​​the packaging unit configured on the carrier platform; as well as The processor, coupled to the image acquisition module, is used to obtain a reference distance corresponding to the total spacing based on the image, calculate the difference between the reference distance and the standard distance, determine the bonding temperature of the bearing platform based on the difference, and calculate a temperature compensation value. When the absolute value of the difference is less than or equal to a preset difference, the bonding temperature is a preset temperature value. When the absolute value of the difference is greater than the preset difference, the bonding temperature is the sum of the preset temperature value and the temperature compensation value.

2. The internal lead bonding device according to claim 1, characterized in that, The total spacing is the distance between the inner leads of the two outermost long sides in a direction parallel to the two long sides.

3. The internal lead bonding device according to claim 1, characterized in that, When the absolute value of the difference is greater than the preset difference and the difference is positive, the temperature compensation value is negative; and when the absolute value of the difference is greater than the preset difference and the difference is negative, the temperature compensation value is positive.

4. The internal lead bonding device according to claim 1, characterized in that, The image includes two positioning frames located at two corners on the diagonal of the chip bonding area, and the reference distance is the distance between the center points of the two positioning frames in a direction parallel to the two long sides.

5. The internal lead bonding device according to claim 4, characterized in that, Each of the positioning frames includes M of the plurality of long side inner leads, and the edge of each positioning frame is located between the Mth long side inner lead and the (M+1)th long side inner lead, where M is greater than 1.

6. The internal lead bonding device according to claim 5, characterized in that, The chip bonding area also has two opposing short sides, and the plurality of inner leads also includes a plurality of short side inner leads arranged along the two short sides. Each positioning frame also includes N of the plurality of short side inner leads. The other edge of each positioning frame is located between the Nth short side inner lead and the (N+1)th short side inner lead, where N is greater than 1.

7. A method for bonding internal leads, characterized in that, include: A flexible packaging tape having multiple packaging units is transported, such that each packaging unit is sequentially arranged on a carrier platform, wherein each packaging unit has a chip bonding area and multiple inner leads located within the chip bonding area, the multiple inner leads including multiple long-side inner leads arranged along two opposite long sides of the chip bonding area and the multiple long-side inner leads having a total spacing in a direction parallel to the two long sides, and the carrier platform at least corresponds to the chip bonding area of ​​the packaging unit arranged on the carrier platform; A chip with multiple bumps is placed on a pressing head; Acquire an image of the chip bonding area of ​​the packaging unit configured on the carrier platform; A reference distance corresponding to the total spacing is obtained based on the image; Calculate the difference between the reference distance and the standard distance; The joining temperature of the bearing platform is determined based on the difference and a temperature compensation value is calculated. When the absolute value of the difference is less than or equal to a preset difference, the joining temperature is a preset temperature value. When the absolute value of the difference is greater than the preset difference, the joining temperature is the sum of the preset temperature value and the temperature compensation value. Adjust the temperature of the support platform to the engagement temperature; as well as Pressure is applied to the pressing head to place the chip within the chip bonding area of ​​the packaging unit disposed on the carrier platform, and the plurality of bumps of the chip are correspondingly engaged with the plurality of inner leads.

8. The internal lead bonding method according to claim 7, characterized in that, The total spacing is the distance between the inner leads of the two outermost long sides in a direction parallel to the two long sides.

9. The internal lead bonding method according to claim 7, characterized in that, When the absolute value of the difference is greater than the preset difference and the difference is positive, the temperature compensation value is negative; and when the absolute value of the difference is greater than the preset difference and the difference is negative, the temperature compensation value is positive.

10. The internal lead bonding method according to claim 7, characterized in that, The image includes two positioning frames located at two corners on the diagonal of the chip bonding area, and the reference distance is the distance between the center points of the two positioning frames in a direction parallel to the two long sides.

11. The internal lead bonding method according to claim 10, characterized in that, Each of the positioning frames includes M of the plurality of long side inner leads, and the edge of each positioning frame is located between the Mth long side inner lead and the (M+1)th long side inner lead, where M is greater than 1.

12. The internal lead bonding method according to claim 11, characterized in that, The chip bonding area also has two opposing short sides, and the plurality of inner leads also includes a plurality of short side inner leads arranged along the two short sides. Each positioning frame also includes N of the plurality of short side inner leads. The other edge of each positioning frame is located between the Nth short side inner lead and the (N+1)th short side inner lead, where N is greater than 1.

13. The internal lead bonding method according to claim 7, characterized in that, When the bonding temperature of the carrier platform is adjusted to the sum of the preset temperature value and the temperature compensation value for X consecutive packaging units, the preset temperature value is changed to the average of the multiple bonding temperatures of the multiple packaging units for X consecutive packaging units, where X is greater than or equal to 3.

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