A silicon carbide continuous crystal growing device and a crystal growing process

Abstract

The application provides a silicon carbide continuous crystal growing device and a crystal growing process, which comprises a growing chamber, a containing device, a turnover crystal growing device and the like, the turnover crystal growing device comprises a bearing plate and a seed crystal connecting workpiece, in the process of silicon carbide vapor phase growth, the turnover crystal growing device is controlled to rotate intermittently, silicon carbide crystal rods can be alternately and continuously grown on both sides of the two seed crystal connecting workpieces, the bearing plate is moved towards the direction of the second material guiding opening in the process of growth, the first silicon carbide crystal rod can be pulled out for material taking from the second material guiding opening, the second silicon carbide crystal rod is continuously generated on the surface of the seed crystal connecting workpiece at the bottom end, the alternate and continuous growth of the silicon carbide crystal rod is completed, and the growth efficiency of the silicon carbide crystal rod is improved. The application can realize the continuous growth of the silicon carbide crystal rod, and greatly improves the growth efficiency of the silicon carbide crystal rod.

Description

Technical Field

[0001] This invention relates to the field of silicon carbide production technology, and in particular to a silicon carbide continuous crystal growth apparatus and crystal growth process. Background Technology

[0002] Physical vapor deposition (PVD) is one of the important growth processes for silicon carbide crystals. It involves heating silicon carbide raw materials to melt them, allowing the gaseous raw materials to adhere to the surface of the seed crystal, thereby completing the continuous generation of silicon carbide crystals.

[0003] To increase the length of silicon carbide production, silicon carbide crystals are usually produced continuously using a pulling method to ensure that the bottom of the silicon carbide crystal is in a constant position relative to the loading crucible, so as to continuously form silicon carbide crystal rods.

[0004] In the currently used silicon carbide crystal rod growth equipment, after the silicon carbide crystal rod grows to the predetermined length, the growth equipment needs to be opened before the crystal rod can be taken out. This process will destroy the protective atmosphere for the production of the crystal rod and affect its high-temperature growth environment. Furthermore, due to the high-temperature environment inside the growth equipment, the crystal removal process takes a long time, which occupies the continuous growth time of the silicon carbide crystal rod and limits the crystal rod growth efficiency. Summary of the Invention

[0005] To address the aforementioned problems, this invention provides a silicon carbide continuous crystal growth apparatus and crystal growth process, which enables continuous growth of silicon carbide crystal rods and greatly improves the growth efficiency of silicon carbide crystal rods.

[0006] To solve the above problems, the technical solution adopted by the present invention is as follows:

[0007] A silicon carbide continuous crystal growth apparatus, comprising:

[0008] The growth chamber contains a crucible carrier for filling materials and a heating assembly.

[0009] A receiving device is installed at the top of the growth chamber. The bottom of the receiving device has a first material guide opening that is connected to the growth chamber, and the top has a second material guide opening that is opposite to it. An opening and closing control valve is provided in the second material guide opening. The receiving device has a receiving chamber inside.

[0010] A crystal growth device is installed inside a receiving chamber and includes a rotating flipping support cylinder. A support plate is slidably and sealed inside the flipping support cylinder, and seed crystal connecting workpieces are fixedly connected to both sides of the support plate.

[0011] During the heating process, the support plate is continuously pulled and moved towards the second feed opening, so that the first silicon carbide crystal rod is continuously grown on the side of the first seed crystal connected to the workpiece. After the first silicon carbide crystal rod has grown to a predetermined length, the rotating support cylinder is controlled to rotate 180°, so that the second silicon carbide crystal rod is continuously grown on the side of the second seed crystal connected to the workpiece, while the first silicon carbide crystal rod is removed.

[0012] Preferably, it further includes a locking and lifting device located on one side of the second feed opening. The locking and lifting device includes a locking and lifting mounting bracket, a first locking and lifting joint, and a second locking and lifting joint. The first locking and lifting joint extends into the second feed opening to lock and lift the top of the silicon carbide crystal rod, and the second locking and lifting joint locks and lifts the main body of the silicon carbide crystal rod.

[0013] Preferably, the first locking lifting joint includes two symmetrically arranged first locking lifting arms, the lower end of each first locking lifting arm is fixedly connected to an arc-shaped locking pad, the top of the first locking lifting joint is equipped with a first electronic control device for driving the first locking lifting arm to move linearly in the horizontal direction, and the top of the locking lifting mounting bracket is equipped with a second electronic control device for driving the first locking lifting joint to move linearly in the vertical direction.

[0014] Preferably, the second locking and lifting joint includes two symmetrically arranged second locking and lifting arms, which are connected to the corresponding first locking and lifting arms by a connecting belt. Inclined locking limiting plates are fixedly connected inside both sides of the locking and lifting mounting bracket. The second locking and lifting arms slide along the surface of the locking limiting plates, and a hydraulic limiting component is provided between them.

[0015] Preferably, limit sealing cylinders are slidably provided on both sides of the flipping bearing cylinder, and the two limit sealing cylinders are controlled to move linearly and extend into the first guide opening and the second guide opening respectively to complete the sealing.

[0016] Preferably, the inner wall of the flipping bearing cylinder is slidably provided with two opposing wedge-shaped limiting blocks 1, and the inner wall of the limiting sealing cylinder is fixedly connected with two wedge-shaped limiting blocks 2, wherein the inclined surfaces of the wedge-shaped limiting blocks 1 and 2 are opposite to each other, and the wedge-shaped limiting blocks 1 are located on the moving path of the wedge-shaped limiting blocks 2.

[0017] Preferably, the inner wall of the tilting bearing cylinder has an annular control chamber, and a sealing control ring is slidably connected to the inner wall of the control chamber. The sealing control ring is fixedly connected to the limiting sealing cylinder. The sealing control ring divides the control chamber into a first control chamber and a second control chamber. Control medium is alternately pumped into the first control chamber and the second control chamber to achieve drive control of the sealing control ring.

[0018] Preferably, a driving device is provided on the first side of the receiving device for controlling the rotation of the crystal growth device. A medium pumping device is provided between the driving device and the receiving device. The medium pumping device includes a medium pumping sleeve and a medium pumping shaft. The medium pumping shaft is fixedly connected to the crystal growth device. The medium pumping sleeve is fixedly connected to the driving device. A first pumping plate is fixedly connected to the surface of the medium pumping shaft. A second pumping plate is fixedly connected to the inner wall of the medium pumping sleeve. A third control chamber and a fourth control chamber are formed between the first pumping plate and the second pumping plate. The control medium in the third control chamber and the fourth control chamber are alternately adjusted to enter the first control chamber and the second control chamber respectively to complete the driving control of the sealing control ring. A locking device is provided on the second side of the receiving device.

[0019] Preferably, the locking device includes a locking shaft and a locking sleeve sleeved on the outside of the locking shaft. The surface of the locking shaft is provided with an elastic locking protrusion, and the inner wall of the locking sleeve is provided with a locking groove that matches the locking protrusion.

[0020] A continuous crystal growth process for silicon carbide includes the following steps:

[0021] S1. Control the flipping crystal growth device to be in the first vertical state, close the opening and closing control valve, start the heating component, so that the first silicon carbide crystal rod is generated on the surface of the first seed crystal connecting workpiece, and continuously pull the support plate to move towards the second material guide opening, so as to complete the continuous growth of the first silicon carbide crystal rod.

[0022] S2. After the first silicon carbide crystal rod has grown to the predetermined length, the crystal growing device is rotated and placed in the second vertical state, so that the second silicon carbide crystal rod is continuously generated on the surface of the second seed crystal connecting workpiece, and the first silicon carbide crystal rod is taken out from the second feed opening.

[0023] The beneficial effects of this invention are as follows:

[0024] By setting up a receiving device and a flip-crystal growth device, the position of the internal support plate and silicon carbide crystal rod can be adjusted by adjusting the flip-crystal growth device. This allows the silicon carbide crystal rod to be continuously generated at the bottom of the support plate. Compared with the traditional silicon carbide crystal rod growth and feeding, there is no need to open the entire structure to remove the material. Furthermore, during the process of lifting and removing the top silicon carbide crystal rod, the newly generated silicon carbide crystal rod at the bottom is continuously lifted, which greatly improves the efficiency of silicon carbide crystal rod generation. At the same time, it can keep the low-end position of the newly generated silicon carbide crystal rod at the bottom relatively constant, ensuring the quality requirements of silicon carbide crystal rod generation. Attached Figure Description

[0025] Figure 1 This is a three-dimensional structural diagram of the present invention;

[0026] Figure 2 This is a schematic diagram of the main structure of the present invention;

[0027] Figure 3 This is a side view of the structure of the present invention;

[0028] Figure 4 This is a top view of the structure of the present invention;

[0029] Figure 5 This is a schematic diagram of the internal structure of the receiving device of the present invention;

[0030] Figure 6 For the present invention Figure 5 A schematic diagram of the side view structure;

[0031] Figure 7 For the present invention Figure 6 A schematic diagram of the AA-line cross-sectional structure;

[0032] Figure 8 For the present invention Figure 7 A magnified structural diagram at point B;

[0033] Figure 9 This is a three-dimensional structural diagram of the locking and lifting device of the present invention;

[0034] Figure 10 For the present invention Figure 9 A schematic diagram of the main structure.

[0035] In the diagram: 100, growth chamber; 200, receiving device; 210, second feed opening; 220, receiving chamber; 230, first feed opening; 300, driving device; 310, drive motor; 320, drive shaft; 400, locking and lifting device; 410, locking and lifting mounting bracket; 420, second locking and lifting joint; 421, second locking and lifting arm; 430, first locking and lifting joint; 431, first locking and lifting arm; 432, locking pad; 440, locking limit plate; 45 0. Second electrical control device; 500. Medium pumping device; 510. Medium pumping sleeve; 511. Second pumping plate; 520. Medium pumping shaft; 521. First pumping plate; 600. Locking device; 700. Tilting crystal growth device; 710. Tilting bearing cylinder; 711. Control chamber; 712. Wedge-shaped limiting block one; 720. Bearing plate; 721. Seed crystal connecting workpiece; 730. Limiting sealing cylinder; 731. Wedge-shaped limiting block two; 732. Sealing control ring; 800. Silicon carbide crystal rod. Detailed Implementation

[0036] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0037] See attached document Figure 1-Appendix Figure 10 A continuous silicon carbide crystal growth apparatus includes a growth chamber 100, a receiving device 200, and a flip-crystal growth device 700. The flip-crystal growth device 700 includes a support plate 720 and seed crystal connecting workpieces 721. During the silicon carbide vapor phase growth process, the flip-crystal growth device 700 is controlled to rotate intermittently, allowing silicon carbide crystal rods 800 to grow alternately and continuously on both sides of the two seed crystal connecting workpieces 721. During the growth process, the support plate 720 is pulled and moved towards the second feed opening 210, which can move the first silicon carbide crystal rod... The silicon carbide ingot 800 is pulled up from the second feed opening 210 to take out the material. The second silicon carbide ingot 800 is continuously generated on the surface of the seed crystal connecting workpiece 721 at the bottom end, completing the alternating continuous growth of silicon carbide ingot 800 and improving the growth efficiency of silicon carbide ingot 800. At the same time, there is no need to open the growth chamber 100 during the material taking process, which can maintain the temperature and protective atmosphere inside the growth chamber 100 and avoid the disruption of the continuity of silicon carbide growth during the material taking process, further improving the efficiency of continuous growth of silicon carbide ingot 800.

[0038] The growth chamber 100 is equipped with a crucible carrier for filling materials and a heating component. The silicon carbide raw material in the crucible carrier is heated and melted to a predetermined temperature by the heating component. The gaseous silicon carbide can move upward and deposit on the surface of the seed crystal. The gaseous silicon carbide is continuously generated and deposited, and silicon carbide crystal rods 800 are continuously generated on the surface of the seed crystal.

[0039] The receiving device 200 is installed at the top of the growth chamber 100. The bottom of the receiving device 200 has a first material guide opening 230 that is connected to the growth chamber 100, and the top has a second material guide opening 210 that is opposite to it. The second material guide opening 210 is equipped with an opening and closing control valve. The receiving device 200 has a receiving chamber 220 inside. The second material guide opening 210 and the first material guide opening 230 are located in the vertical direction and on the same axis. The silicon carbide crystal rod 800 grows at the first material guide opening 230 at the bottom. After growing to a predetermined length, it is rotated 180°, and after adjusting its direction, it is removed from the second material guide opening 210 at the top.

[0040] The flip-crystal growth device 700 is disposed inside the receiving chamber 220, including a rotatably mounted flip-carrying cylinder 710. A carrier plate 720 is slidably mounted inside the flip-carrying cylinder 710. Seed crystal connecting workpieces 721 are fixedly connected to both sides of the carrier plate 720, thus fixing the seed crystal. After the silicon carbide ingot 800 on the surface of the first seed crystal connecting workpiece 721 grows to a predetermined length, the flip-carrying cylinder 710 is rotated 180°, aligning the first silicon carbide ingot 800 with the surface of the second feed opening 210, and the first silicon carbide ingot 800 is pulled out from the surface of the second feed opening 210. Simultaneously, the second seed crystal... After the seed crystal connector 721 is flipped and positioned at the bottom, the second silicon carbide crystal rod 800 can be continuously generated from the surface of the bottom seed crystal connector 721, completing the continuous growth of the second silicon carbide crystal rod 800. By controlling the flipping support cylinder 710 to rotate intermittently by 180°, the continuous growth and material removal of the silicon carbide crystal rod 800 can be completed, improving the efficiency of silicon carbide crystal rod 800 growth. In particular, during the process of controlling the material removal of the first silicon carbide crystal rod 800, the second silicon carbide crystal rod 800 is continuously generated on the surface of the bottom seed crystal connector 721, avoiding the disruption of the continuity of silicon carbide growth during the material removal process, further improving the efficiency of continuous growth of silicon carbide crystal rod 800.

[0041] It should be noted that the second feeding opening 210 extends along the length direction. During the silicon carbide generation process, the opening and closing control valve inside the second feeding opening 210 is in a closed state to maintain the protective atmosphere for silicon carbide generation in the growth chamber 100. At the same time, during the material removal process, the opening and closing control valve inside the second feeding opening 210 is opened, so that the pre-generated silicon carbide ingot 800 can be removed to complete the continuous growth of the silicon carbide ingot 800.

[0042] In summary, during the heating process, the device continuously pulls the support plate 720 towards the second feed opening 210, allowing the first silicon carbide ingot 800 to grow continuously on one side of the first seed crystal connecting workpiece 721. After the first silicon carbide ingot 800 has grown to a predetermined length, the rotating support cylinder 710 is controlled to rotate 180°, allowing the second silicon carbide ingot 800 to grow continuously on one side of the second seed crystal connecting workpiece 721, while simultaneously removing the first silicon carbide ingot 800. This process is repeated, and the surfaces of the two seed crystal connecting workpieces 721 are connected. The process of generating and unloading silicon carbide ingots 800 alternately is completed to achieve continuous production of silicon carbide ingots 800. While the first silicon carbide ingot 800 is being pulled, the second silicon carbide ingot 800 can also be pulled, allowing the silicon carbide ingots 800 to move continuously. This keeps the bottom surface of the silicon carbide ingot 800 generated at the bottom constant with the position of the crucible carrier in the growth chamber 100, ensuring high-quality continuous generation of silicon carbide crystals. Furthermore, the continuous stretching process increases the growth length of the silicon carbide ingots 800, meeting the requirements for growing large-size silicon carbide ingots 800.

[0043] Please refer to the appendix for details. Figure 9 Appendix Figure 10 The device also includes a locking and lifting device 400 located on one side of the second feed opening 210. The locking and lifting device 400 enables continuous lifting of the silicon carbide ingot 800 at the second feed opening 210. The locking and lifting device 400 includes a locking and lifting mounting bracket 410, a first locking and lifting joint 430, and a second locking and lifting joint 420. The first locking and lifting joint 430 extends into the second feed opening 210 to lock and lift the top of the silicon carbide ingot 800, and the second locking and lifting joint 420 locks and lifts the main body of the silicon carbide ingot 800. During the generation of the silicon carbide ingot 800, the first locking and lifting joint 430 locks and lifts the top of the silicon carbide ingot 800, thus achieving continuous lifting. After a predetermined distance, the waist of the silicon carbide ingot 800 is locked and limited by the second locking and lifting joint 420 to ensure its stable support; the first locking and lifting joint 430 is located at the top and can extend into the second material guide opening 210 to lock and lift the top of the silicon carbide ingot 800 to complete the removal of the silicon carbide ingot 800; it should be noted that in order to ensure that the protective atmosphere in the receiving device 200 is not damaged, an airtight protection device is set between the locking and lifting device 400 and the receiving device 200, which can complete the lifting and material removal of the silicon carbide ingot 800 with the opening and closing control valve open, ensuring the stability of the atmosphere in the growth chamber 100 and ensuring the high-quality continuous generation of the silicon carbide ingot 800.

[0044] The first locking and lifting joint 430 includes two symmetrically arranged first locking and lifting arms 431. An arc-shaped locking pad 432 is fixedly connected to the lower end of each first locking and lifting arm 431. The locking pad 432 extends along its length and can extend into the second guide opening 210 to clamp and limit the top of the silicon carbide crystal rod 800. A first electronic control device is installed at the top of the first locking and lifting joint 430 to drive the first locking and lifting arms 431 to move linearly in the horizontal direction. By controlling the first locking and lifting arms 431 to open and close linearly in the horizontal direction, it is possible to... The silicon carbide ingot 800 is tensioned and locked from both sides. A second electronic control device 450 is installed at the top of the locking and lifting mounting bracket 410 to drive the first locking and lifting joint 430 to move linearly in the vertical direction. After the first locking and lifting arm 431 locks the top of the silicon carbide ingot 800, the second electronic control device 450 can control the first locking and lifting joint 430 to move towards the top, thereby completing the continuous lifting of the silicon carbide ingot 800, realizing the material taking of the top silicon carbide ingot 800, and the continuous lifting and growth of the bottom silicon carbide ingot 800.

[0045] The second locking and lifting joint 420 includes two symmetrically arranged second locking and lifting arms 421. The second locking and lifting arms 421 are connected to the corresponding first locking and lifting arms 431 by a connecting belt. Inclined locking limit plates 440 are fixedly connected to both sides of the locking and lifting mounting bracket 410. The second locking and lifting arms 421 slide along the surface of the locking limit plates 440, and a hydraulic limit component is provided between them. The hydraulic limit component is telescopic and can be selected as a hydraulic limit rod. When the first locking and lifting arm 431 moves upward, it can lift the corresponding second locking and lifting arm 421 to move upward synchronously. At this time, the two second locking and lifting arms 421 of the second locking and lifting joint 420 can move inward synchronously along the inclined locking limit plates 440. In this process, the two second locking and lifting arms 421 complete the clamping and limiting of the main body of the silicon carbide crystal rod 800 from both sides.

[0046] It should be noted that the ends of both the second locking lifting arm 421 and the first locking lifting arm 431 are arc-shaped clamping pads, which can fit against the surface of the silicon carbide crystal rod 800; both slide relative to the locking lifting mounting bracket 410, and under the action of the connecting belt, the second locking lifting joint 420 can move after the first locking lifting joint 430, which can meet the subsequent clamping and limiting of the main body of the silicon carbide crystal rod 800; the aforementioned hydraulic limiting component can be a hydraulic telescopic rod, and Furthermore, it is connected to an external control pipeline. Under normal circumstances, the control pipeline is in a closed state. At this time, the second locking lifting arm 421 can move inward along the inclined locking limit plate 440 to clamp and limit the main body of the middle silicon carbide crystal rod 800 from both sides. After the bottom end of the silicon carbide crystal rod 800 is removed, the hydraulic control pipeline is opened, and the clamping and limiting of the silicon carbide crystal rod 800 by the second locking lifting arms 421 on both sides disappears, making it convenient for the staff to remove the silicon carbide crystal rod 800 for subsequent unloading operations.

[0047] Please refer to the appendix for details. Figure 5 -Appendix Figure 8 To enhance overall sealing and reduce damage to the protective atmosphere inside the growth chamber 100 during the pulling of silicon carbide ingots 800, while also lowering the overall equipment sealing requirements, limiting sealing cylinders 730 are slidably installed on both sides of the tilting support cylinder 710. The two limiting sealing cylinders 730 are controlled to move linearly and extend into the first guide opening 230 and the second guide opening 210 respectively to complete the sealing. The tilting support cylinder 710 is controlled to tilt 180° each time, ensuring that the limiting sealing cylinders 730 on both sides correspond to the positions of the first guide opening 230 and the second guide opening 210 respectively. Furthermore, the outer wall of the top of the limiting sealing cylinder 730 is conical. The inner walls of the material opening 230 and the second material guiding opening 210 are adapted to their conical surfaces. During the process of lifting the silicon carbide crystal rod 800, the limiting sealing cylinders 730 on both sides are controlled to extend and can extend into the corresponding first material guiding opening 230 and second material guiding opening 210. The two are in close contact with each other, which can separate the growth chamber 100 and the receiving device 200. The internal support plate 720 is in a sealed sliding state. At this time, the silicon carbide crystal rod 800 at the bottom of the support plate 720 can be lifted in a relatively closed environment, ensuring that the lifting environment is relatively isolated and ensuring the quality and continuity of the growth of the silicon carbide crystal rod 800.

[0048] It should be noted that the limiting sealing cylinder 730 is electrically connected to the opening and closing control valve inside the second material guide opening 210. During the overall flipping process of the limiting sealing cylinder 730, the second material guide opening 210 is in a closed state. After the limiting sealing cylinder 730 finishes flipping and extends into the corresponding second material guide opening 210 and first material guide opening 230, the two are accurately aligned. After sealing is completed at the second material guide opening 210 and the first material guide opening 230, the second material guide opening 210 opens, completing the continuous lifting of the silicon carbide crystal rod 800 at the top of the support plate 720.

[0049] Please refer to the appendix for details. Figure 8 Two opposing wedge-shaped limiting blocks 712 are slidably disposed on the inner wall of the tilting bearing cylinder 710. Two wedge-shaped limiting blocks 731 are fixedly connected to the inner wall of the limiting sealing cylinder 730. The inclined surfaces of the wedge-shaped limiting blocks 712 and 731 are opposite each other, and the wedge-shaped limiting blocks 712 are located on the moving path of the wedge-shaped limiting blocks 731. The two wedge-shaped limiting blocks 712 can move in a direction perpendicular to the axis of the tilting bearing cylinder 710. During the contraction of the limiting sealing cylinder 730, the wedge-shaped limiting blocks 731 on its inner wall can squeeze the wedge-shaped limiting blocks 712, allowing... The wedge-shaped limiting block 712 moves towards the center of the axis to compress the surface of the internal silicon carbide crystal rod 800, thereby supporting the end of the silicon carbide crystal rod 800. When the silicon carbide crystal rod 800 is flipped, it can support its end and ensure its overall stability during the flipping process. The surfaces of the wedge-shaped limiting block 731 and the wedge-shaped limiting block 712 can be provided with linkage grooves, and a linkage block can be set between them. When the limiting sealing cylinder 730 extends outward, it can automatically pull the internal wedge-shaped limiting block 712, allowing it to move outward.

[0050] Furthermore, in order to achieve stable control of the limiting sealing cylinder 730, the device adopts a bidirectional hydraulic control method for telescopic control. Specifically, an annular control chamber 711 is opened in the inner wall of the tilting bearing cylinder 710. A sealing control ring 732 is slidably connected to the inner wall of the control chamber 711. The sealing control ring 732 is fixedly connected to the limiting sealing cylinder 730. The sealing control ring 732 divides the control chamber 711 into a first control chamber and a second control chamber. Control hydraulic medium is alternately pumped into the first control chamber and the second control chamber to drive the sealing control ring 732. By adjusting the control medium in the first control chamber and the second control chamber, pressure can be applied to the sealing control ring 732 from both sides. According to the pressure difference between the two sides, the sealing control ring 732 can move along both sides, thereby realizing the telescopic control of the limiting sealing cylinder 730. The telescopic control by hydraulic means is stable and can adapt to the needs of silicon carbide ingot growth 800, meeting the control requirements.

[0051] A drive device 300 is provided on the first side of the housing device 200 to control the rotation of the flip crystal growth device 700. A medium pumping device 500 is provided between the drive device 300 and the housing device 200. The medium pumping device 500 can control the hydraulic medium before the flip crystal growth device 700 rotates. Before rotation, the hydraulic medium is pumped into the first control room and the second control room to meet the control requirements and improve the overall automation control efficiency. The drive device 300 includes a drive motor 310 and a drive shaft 320. The drive motor 310 controls the rotation of the drive shaft 320 to complete the power output. The end of the drive shaft 320 can be detachably rotated synchronously through a coupling.

[0052] The medium pumping device 500 includes a medium pumping sleeve 510 and a medium pumping shaft 520. The medium pumping shaft 520 is fixedly connected to the crystal growth device 700. The medium pumping sleeve 510 is fixedly connected to the drive device 300. A first pumping plate 521 is fixedly connected to the surface of the medium pumping shaft 520. A second pumping plate 511 is fixedly connected to the inner wall of the medium pumping sleeve 510. A third control chamber and a fourth control chamber are formed by separating the first pumping plate 521 and the second pumping plate 511. The control medium in the third control chamber and the fourth control chamber are alternately adjusted to enter the first control chamber and the second control chamber respectively to complete the drive control of the sealing control ring 732. A locking device 600 is provided on the second side of the receiving device 200.

[0053] Specifically, the third control room can be connected to the first control room, and the fourth control room can be connected to the second control room, as shown in the appendix. Figure 8The first control chamber is the cavity formed at the bottom end of the sealing control ring 732. When the drive device 300 controls the rotation of the medium pumping sleeve 510, the hydraulic medium in the fourth control chamber is squeezed into the second control chamber, while the hydraulic medium in the first control chamber is squeezed into the third control chamber. This pushes the limiting sealing cylinder 730 to complete its contraction. During this process, the medium pumping sleeve 510 applies a predetermined force to the internal medium pumping shaft 520. This predetermined force is less than the locking force of the locking device 600. Therefore, the flipping crystal growth device 700 inside the receiving device 200 will not flip. After the medium pumping shaft 521 rotates to its limit position, the first pumping plate 521 and the second pumping plate 511 abut against each other, and the hydraulic medium in the fourth chamber is completely pumped into the second control chamber. The limiting sealing cylinder 730... The contraction is fully completed, and at this point, the locking force threshold of the locking device 600 is broken. Subsequently, the flipping crystal growth device 700 is controlled to flip, and the already formed silicon carbide crystal rod 800 is flipped 180° to complete the subsequent feeding. After the flipping crystal growth device 700 rotates 180°, the locking device 600 again captures and limits the flipping crystal growth device 700. At this time, the drive device 300 receives a signal and controls the whole to rotate in the opposite direction by a predetermined angle. At this time, the hydraulic medium in the first control chamber increases and the hydraulic medium in the second control chamber decreases. At this time, the limiting sealing cylinder 730 moves outward and extends to complete the sealing on both sides. Repeating the above method, the flipping crystal growth device 700 is controlled to rotate intermittently in the first direction, which can continuously complete the extension and retraction control of the limiting sealing cylinder 730 to meet the continuous control requirements.

[0054] It should be noted that the hydraulic pipeline is embedded inside the medium pumping shaft 520 and connected through a rotating seal, ensuring the normal pumping of the hydraulic medium. This method simplifies the control process, automatically and stably controlling the extension and retraction of the limiting sealing cylinder 730 before the flipping crystal growth device 700 flips, meeting the requirements for continuous growth of silicon carbide ingots 800. It also simplifies the control process, overcomes the aging problem of electronic components in high-temperature environments, and ensures that the overall structure can perform normal and stable extension and retraction control, further improving the efficiency of silicon carbide ingot growth 800.

[0055] As a preferred locking method, the locking device 600 includes a locking shaft and a locking sleeve sleeved on the outside of the locking shaft. The surface of the locking shaft is provided with an elastic locking protrusion, and the inner wall of the locking sleeve is provided with a locking groove that matches the locking protrusion. The locking protrusion and the locking groove are set in two sets and arranged symmetrically. After the crystal growth device 700 rotates 180°, the elastic locking protrusion can extend into the locking groove to complete the automatic capture and locking. The top of the locking protrusion is a circular transition surface, which can overcome the elastic effect under the action of the torsional force towards it, allowing the crystal growth device 700 to continue to deflect and complete the continuous control process.

[0056] A continuous crystal growth process for silicon carbide includes the following steps:

[0057] S1. The control device 700 for crystal growth is in the first vertical position. The opening and closing control valve is closed, and the heating component is started, allowing the first silicon carbide ingot 800 to be formed on the surface of the first seed crystal connecting workpiece 721. The continuously lifting support plate 720 moves towards the second feed opening 210, completing the continuous growth of the first silicon carbide ingot 800. During this process, the gaseous raw material inside the growth chamber 100 is continuously generated on the surface of the seed crystal, continuously forming silicon carbide ingots 800. As the length of the silicon carbide ingot 800 increases, the silicon carbide ingot 800 can be lifted and controlled by lifting the support plate 720, keeping the distance between the bottom of the silicon carbide ingot 800 and the growth chamber 100 constant. This ensures that the raw material gas can be stably maintained on the surface of the silicon carbide ingot 800, guaranteeing that the quality and length of the grown silicon carbide ingot 800 meet the requirements.

[0058] S2. After the first silicon carbide ingot 800 has grown to a predetermined length, the flipping crystal growth device 700 is rotated to a second vertical position, allowing the second silicon carbide ingot 800 to continuously grow on the surface of the second seed crystal connecting workpiece 721. The first silicon carbide ingot 800 is then removed from the second feed opening 210. Before the flipping crystal growth device 700 flips, the silicon carbide ingot 800 is moved inwards to ensure it is entirely within the flipping crystal growth device 700. Elastic locking structures are provided at both ends of the flipping support cylinder 710, allowing the support plate 720 to move to its limit position. After placement, it can automatically capture and lock the carrier plate 720, ensuring the stability of the carrier plate 720 and the silicon carbide crystal rod 800 before and after flipping; at the same time, after the silicon carbide crystal rod 800 is flipped, the second side of the carrier plate 720 is at the bottom position, and the second silicon carbide crystal rod 800 can be continuously generated at the bottom position, improving the overall production efficiency; at the same time, the first silicon carbide crystal rod 800 can be lifted from the second material guide opening 210, and the lifting control of the newly generated silicon carbide crystal rod 800 at the bottom can be completed while the first silicon carbide crystal rod 800 is lifted out, meeting the needs of continuous production.

[0059] By continuously performing the above production operations, after the silicon carbide ingot 800 at the bottom has grown to the predetermined length, the flipping crystal growth device 700 is flipped as a whole, allowing a new silicon carbide ingot 800 to be regenerated at the bottom position, which can greatly improve the growth efficiency of silicon carbide ingot 800. At the same time, by setting up structures such as the containing device 200, the silicon carbide ingot 800 to be pulled at the top can be effectively cooled slowly, and the internal temperature and protective atmosphere can be maintained to ensure the continuous generation of silicon carbide ingot 800.

[0060] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A silicon carbide continuous crystal growth apparatus, characterized in that, include: The growth chamber (100) is equipped with a crucible carrier for filling materials and a heating assembly. A receiving device (200) is installed at the top of the growth chamber (100). The receiving device (200) has a first material guide opening (230) at the bottom that is connected to the growth chamber (100), and a second material guide opening (210) at the top that is opposite to it. An opening and closing control valve is provided in the second material guide opening (210). The receiving device (200) has a receiving chamber (220) inside. The crystal growth device (700) is located inside the receiving chamber (220) and includes a rotating rotating bearing cylinder (710). A bearing plate (720) is slidably and sealed inside the rotating bearing cylinder (710). Seed crystal connecting workpieces (721) are fixedly connected to both sides of the bearing plate (720). During the heating process, the support plate (720) is continuously pulled and moved toward the second feed opening (210) so that the first silicon carbide crystal rod (800) is continuously grown on the side of the first seed crystal connecting workpiece (721). After the first silicon carbide crystal rod (800) has grown to a predetermined length, the rotating support cylinder (710) is controlled to rotate 180° so that the second silicon carbide crystal rod (800) is continuously grown on the side of the second seed crystal connecting workpiece (721) while the first silicon carbide crystal rod (800) is taken out. It also includes a locking and lifting device (400) located on one side of the second material guide opening (210). The locking and lifting device (400) includes a locking and lifting mounting bracket (410), a first locking and lifting joint (430), and a second locking and lifting joint (420). The first locking and lifting joint (430) extends into the second material guide opening (210) to lock and lift the top of the silicon carbide crystal rod (800), and the second locking and lifting joint (420) locks and lifts the main body of the silicon carbide crystal rod (800). The flip-over bearing cylinder (710) is slidably provided with limit sealing cylinders (730) on both sides. The two limit sealing cylinders (730) are controlled to move linearly and extend into the first guide opening (230) and the second guide opening (210) respectively to complete the sealing.

2. The silicon carbide continuous crystal growth apparatus according to claim 1, characterized in that, The first locking lifting joint (430) includes two symmetrically arranged first locking lifting arms (431). The lower end of the first locking lifting arm (431) is fixedly connected to an arc-shaped locking pad (432). The top of the first locking lifting joint (430) is equipped with a first electronic control device for driving the first locking lifting arm (431) to move linearly in the horizontal direction. The top of the locking lifting mounting bracket (410) is equipped with a second electronic control device (450) for driving the first locking lifting joint (430) to move linearly in the vertical direction.

3. The silicon carbide continuous crystal growth apparatus according to claim 2, characterized in that, The second locking lifting joint (420) includes two symmetrically arranged second locking lifting arms (421). The second locking lifting arms (421) are connected to the corresponding first locking lifting arms (431) by a connecting belt. Inclined locking limiting plates (440) are fixedly connected inside both sides of the locking lifting mounting bracket (410). The second locking lifting arms (421) slide along the surface of the locking limiting plates (440), and a hydraulic limiting component is provided between them.

4. The silicon carbide continuous crystal growth apparatus according to claim 3, characterized in that, The inner wall of the flipping bearing cylinder (710) is slidably provided with two opposing wedge-shaped limiting blocks (712), and the inner wall of the limiting sealing cylinder (730) is fixedly connected with two wedge-shaped limiting blocks (731). The inclined surfaces of the wedge-shaped limiting blocks (712) and the wedge-shaped limiting blocks (731) are opposite to each other, and the wedge-shaped limiting blocks (712) are located on the moving path of the wedge-shaped limiting blocks (731).

5. The silicon carbide continuous crystal growth apparatus according to claim 3, characterized in that, The inner wall of the tilting bearing cylinder (710) has an annular control chamber (711). The inner wall of the control chamber (711) is slidably connected to a sealing control ring (732). The sealing control ring (732) is fixedly connected to the limiting sealing cylinder (730). The sealing control ring (732) divides the control chamber (711) into a first control chamber and a second control chamber. Control medium is alternately pumped into the first control chamber and the second control chamber to achieve drive control of the sealing control ring (732).

6. The silicon carbide continuous crystal growth apparatus according to claim 5, characterized in that, A drive device (300) is provided on the first side of the receiving device (200) for controlling the rotation of the flip crystal growth device (700). A medium pumping device (500) is provided between the drive device (300) and the receiving device (200). The medium pumping device (500) includes a medium pumping sleeve (510) and a medium pumping shaft (520). The medium pumping shaft (520) is fixedly connected to the flip crystal growth device (700), and the medium pumping sleeve (510) is fixedly connected to the drive device (300). A first pumping plate (521) is fixedly connected to the surface of the mass pumping shaft (520), and a second pumping plate (511) is fixedly connected to the inner wall of the medium pumping sleeve (510). The first pumping plate (521) and the second pumping plate (511) are separated to form a third control chamber and a fourth control chamber. The control medium in the third control chamber and the fourth control chamber are alternately adjusted to enter the first control chamber and the second control chamber respectively to complete the drive control of the sealing control ring (732). A locking device (600) is provided on the second side of the receiving device (200).

7. The silicon carbide continuous crystal growth apparatus according to claim 6, characterized in that, The locking device (600) includes a locking shaft and a locking sleeve sleeved on the outside of the locking shaft. The surface of the locking shaft is provided with an elastic locking protrusion, and the inner wall of the locking sleeve is provided with a locking groove that matches the locking protrusion.

8. A continuous silicon carbide crystal growth process, characterized in that, Using the silicon carbide continuous crystal growth apparatus according to any one of claims 1-7, the method comprises the following steps: S1. Control the flip crystal growth device (700) to be in the first vertical state, close the opening and closing control valve, start the heating component, so that the first silicon carbide crystal rod (800) is generated on the surface of the first seed crystal connecting workpiece (721), and continuously pull the support plate (720) to move towards the second material guide opening (210) to complete the continuous growth of the first silicon carbide crystal rod (800); S2. After the first silicon carbide crystal rod (800) has grown to a predetermined length, the flip crystal growth device (700) is rotated and placed in the second vertical state, so that the second silicon carbide crystal rod (800) is continuously generated on the surface of the second seed crystal connecting workpiece (721), and the first silicon carbide crystal rod (800) is taken out from the second feed opening (210).

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