A device processing method

Abstract

The application discloses a device processing method and relates to the technical field of electrochromic technology. The device processing method comprises the following steps: providing at least one diaphragm base material, wherein the diaphragm base material comprises at least one base layer group, and the base layer group comprises a conductive layer and a substrate layer which are arranged in a laminated mode; opening a plurality of slot holes on the base layer group, so that the slot holes extend from the side surface of the substrate layer away from the conductive layer to at least the side surface of the conductive layer close to the substrate layer; and filling the slot holes with a conductive component. The device processing method provided by the application can reduce the processing difficulty of an electrochromic device and improve the processing efficiency.

Description

Technical Field

[0001] This application relates to the field of electrochromic technology, and more particularly to a device fabrication method. Background Technology

[0002] Electrochromism refers to the reversible color change of electrochromic materials under the influence of an applied electric field, which manifests as reversible changes in color and transparency.

[0003] In existing technologies, a stepped structure is created on the side of the electrochromic device through laser cutting and edge-tearing operations to expose the conductive layer, which is then electrically connected. During laser cutting, the cutting depth must be strictly controlled to prevent excessive cutting that could damage the conductive layer or insufficient cutting that would prevent edge-tearing, undoubtedly increasing the processing difficulty. Furthermore, after edge-tearing, residual electrolyte on the stepped structure needs to be wiped away. Therefore, existing electrochromic device processing methods suffer from high processing difficulty and complex procedures when exposing the conductive layer, affecting processing efficiency. Summary of the Invention

[0004] This application provides a device fabrication method that reduces the fabrication difficulty when exposing conductive layers and improves fabrication efficiency.

[0005] This application provides:

[0006] A device fabrication method, comprising:

[0007] At least one membrane substrate is provided, the membrane substrate comprising at least one base layer group, the base layer group comprising a conductive layer and a substrate layer stacked thereon;

[0008] A plurality of slots are formed on the base layer, such that the slots extend at least from the side surface of the base layer away from the conductive layer to the side surface of the conductive layer close to the base layer;

[0009] The slot is filled with a conductive component.

[0010] In this application, when creating a hole in the base layer, the slot extends from the surface of the base layer away from the conductive layer to at least the surface of the conductive layer near the base layer, thus exposing a portion of the conductive layer structure through the slot. The depth of the slot can have a certain range of variation, significantly reducing the precision requirements for exposing the conductive layer and consequently reducing the processing difficulty. Furthermore, no residual electrolyte exists on the exposed conductive layer structure during the hole-making process, eliminating the need for wiping and reducing wiping steps compared to existing technologies. Therefore, the device fabrication method provided in this application significantly reduces the processing difficulty when exposing the conductive layer, simplifies the operation steps, and thus improves processing efficiency.

[0011] In some possible implementations, the device fabrication method includes:

[0012] Two membrane substrates are provided, each of the two membrane substrates including a base layer group;

[0013] A plurality of slots are formed on the two base layer groups respectively. In the same base layer group, the slots extend from the side surface of the base layer away from the conductive layer to at least the side surface of the conductive layer close to the base layer.

[0014] In some possible implementations, a plurality of the slots are formed in the base layer group from the side of the base layer away from the conductive layer.

[0015] In some possible implementations, the step of forming a plurality of slots on the two base layers respectively includes:

[0016] A mask layer is coated on the side of the conductive layer away from the substrate layer;

[0017] From the side of the conductive layer away from the base layer, a plurality of slots are formed on the base layer group, such that the slots penetrate the conductive layer and the base layer in the same base layer group;

[0018] Remove the mask layer.

[0019] In some possible implementations, the slot penetrates both the conductive layer and the substrate layer within the same base layer group, and the device fabrication method further includes:

[0020] A transition layer group is provided on the side of the conductive component away from the substrate layer;

[0021] The roughness of the surface of the transition layer group away from the conductive component is less than the roughness of the surface of the conductive component close to the conductive layer.

[0022] In some possible implementations, providing a transition layer group on the side of the conductive component away from the substrate layer includes:

[0023] A varnish is applied to the side of the conductive component away from the substrate layer to form a varnish layer.

[0024] In some possible implementations, providing a transition layer group on the side of the conductive component away from the substrate layer includes:

[0025] A first busbar is arranged on the side of the conductive component away from the substrate layer;

[0026] A varnish is applied to the side of the first busbar away from the conductive component to form a varnish layer.

[0027] In some possible implementations, the slot penetrates both the conductive layer and the substrate layer within the same base layer group, and the device fabrication method further includes:

[0028] A first busbar is arranged on the side of the conductive component away from the substrate layer.

[0029] In some possible implementations, the first busbar is manufactured synchronously with the conductive component it contacts.

[0030] In some possible implementations, the device fabrication method further includes:

[0031] The two base layers are combined into a sheet, and a color-changing layer group is formed between the two conductive layers in the two base layer groups.

[0032] In some possible implementations, the step of combining the two said base layers and forming a color-changing layer group between the two said conductive layers in the two said base layer groups includes:

[0033] An electrochromic layer is coated on the side of the conductive layer away from the substrate layer in one of the base layer groups to form an electrochromic substrate;

[0034] In another set of base layers, a counter electrode layer is coated on the side of the conductive layer away from the base layer to form a counter electrode substrate;

[0035] The counter electrode substrate is bonded to the electrochromic substrate using an electrolyte, and an electrolyte layer is formed between the electrochromic layer and the counter electrode layer.

[0036] In some possible implementations, the device fabrication method further includes:

[0037] In one of the base layer groups, a second busbar is arranged on the side of the base layer away from the conductive layer, and the second busbar is connected to each of the conductive components in the base layer group;

[0038] In another base layer group, a third busbar is arranged on the side of the base layer away from the conductive layer, and the third busbar is connected to each of the conductive components in the base layer group.

[0039] In some possible implementations, the device fabrication method includes:

[0040] A film substrate is provided, the film substrate comprising a first base layer group, a color-changing layer group and a second base layer group stacked sequentially, wherein the conductive layers in the two base layer groups are close to the color-changing layer group.

[0041] A plurality of slots are sequentially formed on the first base layer group and the second base layer group. In the same base layer group, the slots extend from the side surface of the base layer away from the conductive layer to at least the side surface of the conductive layer close to the base layer.

[0042] In some possible implementations, the device fabrication method further includes:

[0043] A second busbar is arranged on the side of the first base layer group away from the color-changing layer group, and the second busbar is connected to each of the conductive components in the first base layer group;

[0044] A third busbar is arranged on the side of the second base layer group away from the color-changing layer group, and the third busbar is connected to each of the conductive components in the second base layer group.

[0045] In some possible implementations, the second busbar is fabricated synchronously with the conductive components on the first base layer group;

[0046] The third busbar is manufactured synchronously with the conductive components on the second base layer.

[0047] In some possible implementations, filling the slot with a conductive component includes:

[0048] A conductive medium is applied to the inner wall of the slot;

[0049] The gaps in the conductive medium are filled with cured adhesive. Attached Figure Description

[0050] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0051] Figure 1 A flowchart illustrating the device fabrication method in some embodiments is shown;

[0052] Figure 2 A flowchart illustrating the device fabrication method in Embodiment 1 is shown;

[0053] Figure 3 A cross-sectional structural diagram of the basic layer group in Embodiment 1 is shown;

[0054] Figure 4 The diagram illustrates the process of creating openings in the base layer group in some embodiments;

[0055] Figure 5 The diagram shows a cross-sectional view of the base layer after opening in some embodiments;

[0056] Figure 6 A schematic diagram of the slot layout structure is shown in some embodiments;

[0057] Figure 7 A schematic diagram of the slot layout structure in another embodiment is shown;

[0058] Figure 8 A top view schematic diagram of various arrangements and shapes of slots in some embodiments is shown;

[0059] Figure 9 Schematic diagrams of various cross-sectional structures of the slots in some embodiments are shown;

[0060] Figure 10 A cross-sectional structural schematic diagram of the electrochromic substrate is shown in some embodiments;

[0061] Figure 11 A schematic cross-sectional view of the electrode substrate is shown in some embodiments;

[0062] Figure 12 A schematic diagram of the process of filling a slot with a conductive component is shown in some embodiments;

[0063] Figure 13 A cross-sectional structural schematic diagram of the conductive component is shown in some embodiments;

[0064] Figure 14 A top view of the conductive components in some embodiments is shown;

[0065] Figure 15 The diagram shows a cross-sectional view of the combined sheet of two base layers in some embodiments;

[0066] Figure 16 The diagram shows a schematic representation of the structure after the second and third busbars are installed in some embodiments;

[0067] Figure 17 A top view of the second busbar and slot structure in some embodiments is shown;

[0068] Figure 18 Schematic diagrams of the structure after the second and third busbars are deployed in other embodiments are shown;

[0069] Figure 19 A cross-sectional structural schematic diagram of the electrochromic device in Embodiment 1 is shown;

[0070] Figure 20 A cross-sectional structural schematic diagram of the transition layer group is shown in some embodiments;

[0071] Figure 21 A flowchart illustrating the setup of transition layer groups is shown in some other embodiments;

[0072] Figure 22 A cross-sectional schematic diagram of the transition layer group in some other implementations is shown;

[0073] Figure 23 A partial cross-sectional structural schematic diagram of the electrochromic device in Embodiment 2 is shown;

[0074] Figure 24 A cross-sectional structural schematic diagram of the transition layer group is shown in some other embodiments;

[0075] Figure 25 A flowchart illustrating the device fabrication method of Embodiment 3 is shown;

[0076] Figure 26 A schematic cross-sectional view of the diaphragm substrate in Example 3 is shown.

[0077] Figure 27 A schematic diagram of the cross-sectional structure of the diaphragm substrate after opening is shown in Example 3;

[0078] Figure 28 This shows a schematic cross-sectional view of the diaphragm substrate after the conductive components are filled in in Example 3.

[0079] Figure 29 A partial cross-sectional structural schematic diagram of the electrochromic device in Embodiment 3 is shown.

[0080] Explanation of key component symbols:

[0081] 10-Base layer group; 101-Slot; 10a-First base layer group; 10b-Second base layer group; 11-Base layer; 11a-First base layer; 11b-Second base layer; 12-Conductive layer; 12a-First conductive layer; 12b-Second conductive layer; 13-Protective film; 20-Conductive component; 21-Conductive medium; 22-Fixing component; 30-Color-changing layer group; 31-Electrochromic layer; 32-Electrolyte layer; 33-Counter electrode layer; 41-Second busbar; 42-Third busbar; 50-Protective component; 51a-First base plate; 51b-Second base plate; 52-Sealing component; 53a-First adhesive layer; 53b-Second adhesive layer; 60-Transition layer group; 60a-First transition layer group; 60b-Second transition layer group; 61-First busbar; 62-Gloss layer. Detailed Implementation

[0082] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0083] like Figure 3 and Figure 6 As shown, a Cartesian coordinate system is established, defining the length direction of the electrochromic device as parallel to the x-axis, the width direction as parallel to the y-axis, and the thickness direction as parallel to the z-axis. It is understood that the above definitions are merely for facilitating understanding of the relative positions of the components in the electrochromic device and should not be construed as limitations on this application.

[0084] The embodiment provides a device fabrication method that can be used to fabricate electrochromic devices, which can reduce the fabrication difficulty of electrochromic devices and improve fabrication efficiency.

[0085] like Figure 1 , Figure 3 , Figures 5 to 11 and Figures 26 to 28 As shown, the device fabrication method may include:

[0086] S10, at least one diaphragm substrate is provided, the diaphragm substrate includes at least one base layer group 10, the base layer group 10 includes a base layer 11 and a conductive layer 12 stacked together.

[0087] The substrate layer 11 can be a transparent substrate layer, and can be made of one or more of polyethylene terephthalate (PET), cyclic olefin copolymers, or cellulose triacetate. In some embodiments, the conductive layer 12 can be a transparent conductive layer. Specifically, the conductive layer 12 can be made of one or more of the following materials: indium-tin oxide (ITO), aluminum zinc oxide (AZO), fluorine-doped tin oxide (FTO), silver nanowires, graphene, carbon nanotubes, metal meshes, or silver nanoparticles.

[0088] S20, a plurality of slots 101 are formed on the base layer group 10, such that the slots 101 extend from the side surface of the base layer 11 away from the conductive layer 12 to the side surface of the conductive layer 12 close to the base layer 11.

[0089] In this embodiment, slots 101 are formed in the base layer 10, allowing a portion of the conductive layer 12 structure to be exposed through the slots 101. It is understood that the depth of the slots 101 can have a certain range of variation along the thickness direction of the electrochromic device, ensuring that a portion of the conductive layer 12 structure is exposed relative to the slots 101. Therefore, compared to traditional processing methods, this embodiment significantly reduces the processing precision requirements when exposing the conductive layer 12, thereby reducing processing difficulty and improving processing efficiency.

[0090] In addition, during the process of opening the slots 101 on the base layer 10, electrolytes and other substances will not adhere to the exposed structural surface of the conductive layer 12, thus eliminating the need for wiping and other operations, saving operation steps and further improving processing efficiency.

[0091] S30, fill the slot 101 with conductive component 20.

[0092] When the conductive component 20 is filled into the slot 101, the conductive component 20 can contact and electrically connect with the exposed structural surface of the conductive layer 12 relative to the slot 101. Thus, the conductive layer 12 can be electrically connected through the conductive component 20.

[0093] Example 1

[0094] like Figure 2 As shown, the embodiment provides a device fabrication method, which may include:

[0095] S110 provides two diaphragm substrates, each of which includes a base layer group 10.

[0096] Combined again Figure 10 and Figure 11 Specifically, one membrane substrate includes a first base layer group 10a, and the other membrane substrate includes a second base layer group 10b. In this embodiment, the first base layer group 10a may include a first substrate layer 11a and a first conductive layer 12a stacked together. The second base layer group 10b may include a second substrate layer 11b and a second conductive layer 12b stacked together.

[0097] S120, a plurality of slots 101 are formed on the two base layer groups 10 respectively, and in the same base layer group 10, the slots 101 extend from the side surface of the base layer 11 away from the conductive layer 12 to the side surface of the conductive layer 12 close to the base layer 11.

[0098] In this embodiment, the same operation method can be used to open a number of slots 101 on the two basic layer groups 10. Taking the opening of slots 101 on the first basic layer group 10a as an example, the details are described in detail.

[0099] like Figure 5As shown, in some embodiments, the first base layer group 10a can be opened from the side of the first conductive layer 12a away from the first base layer 11a. Accordingly, the slot 101 penetrates both the first conductive layer 12a and the first base layer 11a.

[0100] like Figure 4 As shown, in some embodiments, forming a plurality of slots 101 on the first base layer group 10a may specifically include the following steps:

[0101] S121, a mask layer is coated on the side of the first conductive layer 12a away from the first substrate layer 11a.

[0102] The mask layer can be made of photoresist, silicon dioxide (SiO2), or UV-curable adhesive.

[0103] S122, from the side of the first conductive layer 12a away from the first base layer 11a, a plurality of slots 101 are formed on the first base layer group 10a, so that the slots 101 penetrate the first conductive layer 12a and the first base layer 11a.

[0104] In this embodiment, a portion of the structure within the first conductive layer 12a located on the inner wall of the slot 101 is exposed. It is understood that dust will be generated on the opening side during the opening process. In this embodiment, a mask layer is provided on the side of the first conductive layer 12a away from the first substrate layer 11a, which can effectively prevent dust from adhering to the surface of the first conductive layer 12a away from the first substrate layer 11a, thereby avoiding affecting the subsequent processing and operating performance of the electrochromic device.

[0105] like Figure 6 As shown, a plurality of slots 101 can be formed on the first base layer group 10a. These slots 101 can be positioned near one side of the first base layer group 10a and arranged in a row along the extending direction of that side. For example, the plurality of slots 101 can be positioned near one side of the first base layer group 10a along the width direction of the electrochromic device. It is understood that each side of the first base layer group 10a can overlap with each side of the electrochromic device.

[0106] like Figure 7 As shown, in some embodiments, the plurality of slots 101 may be disposed near one side of the first base layer group 10a along the length direction of the electrochromic device. Of course, in other embodiments, the plurality of slots 101 may also be disposed near any two or three sides of the first base layer group 10a, that is, the plurality of slots 101 may be distributed near any two or three sides of the first base layer group 10a. Alternatively, the plurality of slots 101 may be arranged circumferentially around the first base layer group 10a.

[0107] like Figure 6As shown, in some embodiments, the slot 101 can be a circular hole, and multiple slots 101 can be evenly spaced. In the embodiments, the vertical distance d between the centers of two adjacent slots 101 can be set to 2.0mm to 30.0mm. For example, the vertical distance d between the centers of two adjacent slots 101 can be set to 2.0mm, 2.75mm, 5.0mm, 8.5mm, 12.0mm, 16.0mm, 20.5mm, 24.0mm, 26.5mm, 28.0mm, 30.0mm, etc.

[0108] In some embodiments, the distance m between the slot 101 and the side of the nearby electrochromic device can be set to 0.5 mm to 20.0 mm. Specifically, distance m refers to the vertical distance between the center of the slot 101 closest to the side and the side itself. For example, the distance m between the slot 101 and the side of the nearby electrochromic device can be set to 0.5 mm, 1.5 mm, 5.2 mm, 6.0 mm, 8.0 mm, 11.0 mm, 14.5 mm, 16.0 mm, 17.0 mm, 19.5 mm, 20.0 mm, etc.

[0109] like Figure 8 As shown, in other embodiments, the slot 101 can be an elliptical hole, an annular hole, or other arc-shaped hole, or a polygonal hole such as a triangular hole, quadrilateral hole, pentagonal hole, or pentagonal star hole. Multiple slots 101 can be arranged in an ordered or disordered manner within a layout area, which can be located near one side of the electrochromic device and extend along that side.

[0110] like Figure 8 As shown, in some embodiments, the slot 101 may be an elongated hole extending along the width direction of the electrochromic device. Multiple slots 101 may be arranged along the width direction of the electrochromic device and in multiple rows. Several slots 101 arranged along the width direction of the electrochromic device can be considered as one row. Adjacent rows of slots 101 may be staggered. Correspondingly, the vertical distance d between the centers of two adjacent rows of slots 101 may refer to the vertical distance between the center lines of two adjacent rows of slots 101.

[0111] like Figure 8 As shown, in some other embodiments, a slot 101 may be formed on the first base layer 10a. The slot 101 may be disposed near one side of the electrochromic device, and the slot 101 may be an elongated hole arranged along that side.

[0112] like Figure 6As shown in the embodiment, along the length direction of the electrochromic device, the size n of the slot 101 can be set to 0.3mm to 3.0mm. For example, the size n of the slot 101 can be set to 0.3mm, 0.45mm, 0.9mm, 1.2mm, 1.55mm, 2.1mm, 2.5mm, 2.75mm, 2.8mm, 3.0mm, etc. Along the width direction of the electrochromic device, the size h of the slot 101 can be set to 0.3mm to 5.0mm. For example, the size h of the slot 101 can be set to 0.3mm, 0.6mm, 1.0mm, 1.3mm, 1.5mm, 1.85mm, 2.0mm, 2.3mm, 2.65mm, 2.9mm, 3.4mm, 3.5mm, 4.0mm, 4.2mm, 4.6mm, 4.85mm, 5.0mm, etc. The length direction of the electrochromic device can be parallel to the width direction of the roll used to process the first base layer group 10a. The width direction of the electrochromic device can be parallel to the winding direction of the roll used to process the first base layer group 10a.

[0113] In some embodiments, slots 101 can be formed on the first base layer 10a by processes such as laser engraving and roll-to-roll punching.

[0114] S123, remove the mask layer.

[0115] After the opening operation is completed on the first base layer group 10a, the remaining mask layer on the first conductive layer 12a can be removed. For example, when the mask layer is formed of an adhesive material such as UV-curable adhesive, the remaining mask layer can be removed by a peeling operation.

[0116] like Figure 9 As shown, in some other embodiments, the first base layer group 10a can also be perforated from the side of the first base layer 11a away from the first conductive layer 12a. This prevents dust generated during the perforation process from adhering to the surface of the first conductive layer 12a away from the first base layer 11a. Correspondingly, the slot 101 can penetrate both the first base layer 11a and the first conductive layer 12a simultaneously. Alternatively, the slot 101 can penetrate only the first base layer 11a, exposing the portion of the first conductive layer 12a on the surface near the first base layer 11a opposite to the slot 101. Or, along the thickness direction of the electrochromic device, the slot 101 can extend from the surface of the first base layer 11a away from the first conductive layer 12a to the middle of the first conductive layer 12a.

[0117] S130, fill the slot 101 with conductive component 20.

[0118] like Figure 10 , Figure 11 and Figure 13As shown, specifically, conductive components 20 are filled into the slots 101 on the two base layer groups 10 respectively, and each slot 101 in the two base layer groups 10 is filled with conductive components 20.

[0119] Of course, in other embodiments, it is not excluded that conductive components 20 may be filled in some slots 101 on the same base layer group 10.

[0120] like Figure 10 and Figure 11 As shown, in some embodiments, the conductive component 20 may include a conductive medium 21. Step S130 may include: injecting liquid conductive medium 21 into each slot 101 and allowing the conductive medium 21 to solidify.

[0121] Understandably, the liquid conductive medium 21 can be injected from the opening of the slot 101 near the base layer 11 or the conductive layer 12, and the conductive medium 21 can move to the other end under the action of gravity. The conductive medium 21 will contact and electrically connect with the exposed structure in the conductive layer 12. After the liquid conductive medium 21 solidifies, it can be fixed in the corresponding slot 101, achieving a fixed connection between the conductive medium 21 and the base layer group 10, thereby ensuring a stable electrical connection between the conductive medium 21 and the conductive layer 12 it contacts. In this embodiment, the conductive medium 21 can fill the slot 101 completely to ensure sufficient contact and electrical connection between 21 and the corresponding conductive layer 12, and also facilitates further electrical disconnection operations of the conductive medium 21.

[0122] In some embodiments, the conductive medium 21 may be selected from conductive silver paste, conductive adhesive, conductive grease or conductive liquid, etc.

[0123] like Figures 12 to 14 As shown, in some other embodiments, the conductive component 20 may include a conductive medium 21 and a fixing member 22 located inside the conductive medium 21. Accordingly, step 130 may include:

[0124] S131, a conductive dielectric 21 is coated on the inner wall of the slot 101.

[0125] Specifically, liquid conductive medium 21 is injected through one end opening of the slot 101, causing the conductive medium 21 to adhere to the inner wall of the slot 101, thus forming a layer of conductive medium 21 on the inner wall of the slot 101. The conductive medium 21 can be a conductive liquid or similar material.

[0126] S132, fill the gaps in the conductive medium 21 with cured adhesive.

[0127] Understandably, when the conductive medium 21 is injected into the slot 101 and forms a wall-like structure on the inner wall of the slot 101, a certain space can be retained inside the slot 101. This space is located on the side of the conductive medium 21 away from the inner wall of the slot 101, meaning the conductive medium 21 exhibits a tubular structure, and certain gaps can be formed inside the conductive medium 21. In this embodiment, the gaps between the conductive media 21 can be filled with a curing adhesive. After the curing adhesive cures, corresponding fasteners 22 are formed, which provide support for the conductive medium 21, preventing the conductive medium 21 from separating from the slot 101 and falling off, thus improving the stability of the structure. The curing adhesive can be a UV-curable adhesive or a thermosetting adhesive, etc. The viscosity of the curing adhesive can be 6000 Pa·s to 10000 Pa·s.

[0128] like Figure 2 As shown, in some embodiments, the device fabrication method further includes:

[0129] S140, the two basic layer groups 10 are laminated together, and a color-changing layer group 30 is formed between the two conductive layers 12 in the two basic layer groups.

[0130] like Figure 10 , Figure 11 and Figure 15 As shown, specifically, an electrochromic layer 31 is coated on the side of the first conductive layer 12a away from the first substrate layer 11a to form an electrochromic substrate. A counter electrode layer 33 is coated on the side of the second conductive layer 12b away from the second substrate layer 11b to form a counter electrode substrate. The counter electrode substrate is bonded to the electrochromic substrate using an electrolyte, and an electrolyte layer 32 is formed between the counter electrode substrate and the electrochromic substrate. Specifically, the side of the electrochromic layer 31 away from the first conductive layer 12a is bonded to the side of the electrolyte layer 32, and the side of the counter electrode layer 33 away from the second conductive layer 12b is bonded to the side of the electrolyte layer 32 away from the electrochromic layer 31.

[0131] S150, busbars are evenly distributed on the side of the two base layer groups 10 away from the color-changing layer group 30, and the busbars are connected to the conductive components 20 on the base layer group 10 that they are close to.

[0132] like Figure 16 Specifically, a second busbar 41 is arranged on the side of the first base layer 11a away from the color-changing layer group 30, and the second busbar 41 is electrically connected to each conductive component 20 on the first base layer group 10a. A third busbar 42 is arranged on the side of the second base layer 11b away from the color-changing layer group 30, and the third busbar 42 is electrically connected to each conductive component 20 on the second base layer group 10b.

[0133] Understandably, the second busbar 41 and the third busbar 42 can be used to electrically connect external devices, such as controllers, power supplies, etc., in order to enable power supply and control of the electrochromic device.

[0134] In some embodiments, the second busbar 41 and the third busbar 42 may be made of conductive silver paste, copper foil or conductive adhesive, etc.

[0135] In other embodiments, when the second busbar 41 and the third busbar 42 are cured from liquid conductive materials such as conductive silver paste or conductive adhesive, the second busbar 41 can be fabricated simultaneously with the conductive component 20 on the first base layer 10a. Specifically, the second busbar 41 is fabricated simultaneously with the conductive medium 21 on the first base layer 10a. Similarly, the third busbar 42 can be fabricated simultaneously with the conductive medium 21 on the second base layer 10b. That is, steps S150 and S130 are performed simultaneously.

[0136] Combined again Figure 17 In some embodiments, the projection of each conductive component 20 on the first base layer group 10a onto the plane where the second busbar 41 is located is all on the second busbar 41, that is, the second busbar 41 completely covers all conductive components 20 on the first base layer group 10a, so as to ensure good electrical connection between the second busbar 41 and each conductive component 20 on the first base layer group 10a.

[0137] Similarly, the projection of each conductive component 20 on the plane of the third busbar 42 is located on the third busbar 42. That is, the third busbar 42 completely covers all conductive components 20 on the second base layer 10b to ensure good electrical connection between the third busbar 42 and each conductive component 20 on the second base layer 10b.

[0138] Combined again Figure 3 In some embodiments, the two base layer groups 10 may further include a protective film 13, which may be located on the base layer 11 away from the conductive layer 12. It is understood that the protective film 13 may be peeled off from the corresponding base layer 11 before the second busbar 41 and the third busbar 42 are fabricated.

[0139] like Figure 17 As shown, in some embodiments, the second busbar 41 may be disposed opposite to the third busbar 42, that is, the projection of the second busbar 41 onto the plane where the third busbar 42 is located is located on the third busbar 42. Correspondingly, the conductive components 20 on the two base layer groups 10 are also disposed opposite to each other.

[0140] like Figure 18As shown, in some embodiments, the second busbar 41 and the third busbar 42 can be staggered, that is, the second busbar 41 and the third busbar 42 can be respectively located near the opposite sides of the electrochromic device. Correspondingly, the conductive components 20 on the two base layer groups 10 can also be staggered, thereby reducing the operational precision requirements when the two base layer groups 10 are laminated, reducing the processing difficulty, and improving the processing efficiency.

[0141] In other embodiments, the second busbar 41 and the third busbar 42 may also be fabricated before the two base layer groups 10 are laminated, i.e., between step S150 and step S140.

[0142] like Figure 2 As shown, in some embodiments, the device fabrication method further includes:

[0143] S160, set protection component 50.

[0144] Combined again Figure 19 Specifically, an adhesive material is applied to the side of the first base layer 11a away from the first conductive layer 12a to form a first adhesive layer 53a, and a first base plate 51a is pressed onto the side of the first adhesive layer 53a away from the first base layer 11a. An adhesive material is applied to the side of the second base layer 11b away from the second conductive layer 12b to form a second adhesive layer 53b, and a second base plate 51b is pressed onto the side of the second adhesive layer 53b away from the second base layer 11b.

[0145] Additionally, a sealant 52 is filled between the first base plate 51a and the second base plate 51b, and the sealant 52 is arranged circumferentially around the color-changing layer assembly 30 and the two base layer assemblies 10. It is understood that the protective assembly 50 can be composed of the first base plate 51a, the second base plate 51b, and the sealant 52, providing protection for the processed color-changing layer assembly 30 and the two base layer assemblies 10. Simultaneously, the protective assembly 50 can also prevent moisture and other contaminants from penetrating the color-changing layer assembly 30 and the two base layer assemblies 10, thus achieving a moisture isolation effect.

[0146] In some embodiments, both the first base plate 51a and the second base plate 51b can be made of transparent glass. The sealant 52 can be made of an adhesive that isolates water and oxygen, such as any one of pressure-sensitive adhesive, hot melt adhesive, UV-curable adhesive, thermosetting adhesive, or UV-curing dual-curing adhesive.

[0147] In some embodiments, both the first adhesive layer 53a and the second adhesive layer 53b can be made of optically transparent adhesive materials, such as optically clear adhesive (OCA), solid optically clear adhesive (SCA), super Safe Glas (SGP), liquid optically clear adhesive (LOCA), etc.

[0148] Example 2

[0149] like Figure 20 , Figures 22 to 24 As shown, an embodiment provides a device fabrication method. Based on Embodiment 1, when the slot 101 penetrates the base layer 11 and the conductive layer 12 in the same base layer group 10, the device fabrication method may further include the following steps between step S130 and step S140:

[0150] S170, a transition layer group 60 is provided on the side of the conductive component 20 away from the substrate layer 11.

[0151] Specifically, a first transition layer group 60a can be arranged on the side of the first conductive layer 12a away from the first base layer 11a, and the first transition layer group 60a covers each conductive component 20 on the first base layer group 10a. Similarly, a second transition layer group 60b can be arranged on the side of the second conductive layer 12b away from the second base layer 11b, and the second transition layer group 60b covers each conductive component 20 on the second base layer group 10b. In the embodiments, the transition layer groups 60 can be arranged according to the position of the conductive components 20, and correspondingly, the transition layer groups 60 can also be elongated.

[0152] In some embodiments, the roughness of the surface of the transition layer group 60 away from the conductive component 20 is less than the roughness of the surface of the conductive component 20 near the conductive layer 12.

[0153] Understandably, when the conductive component 20 is filled into the slot 101, the surface roughness of the conductive component 20 near the conductive layer 12 cannot be guaranteed, which will affect the subsequent coating of the counter electrode layer 33 and the electrochromic layer 31 on the conductive layer 12, and affect the flatness of the counter electrode layer 33 and the electrochromic layer 31. In this embodiment, a transition layer group 60 is provided on the side of the conductive component 20 near the conductive layer 12, and the surface roughness of the transition layer group 60 away from the conductive layer 12 is made smaller than the surface roughness of the conductive component 20 near the conductive layer 12. This can improve the flatness of the subsequent coating of the counter electrode layer 33 and the electrochromic layer 31, and ensure the working performance of the electrochromic device.

[0154] like Figure 20As shown, in some embodiments, the transition layer group 60 may include a varnish layer 62. Accordingly, the varnish can be applied to the side of the conductive layer 12 away from the substrate layer 11 by processes such as screen printing, and the varnish is positioned corresponding to the conductive component 20. After curing, the varnish layer 62 can be formed. In some embodiments, the varnish layer 62 may be made of ultraviolet-curable varnish or polyurethane varnish, etc. It is understood that the varnish has a high degree of smoothness, thereby ensuring the flatness when the electrochromic layer 31 and the counter electrode layer 33 are subsequently coated.

[0155] In some embodiments, the varnish layer 62 may also be made of conductive varnish. Conductive varnish can refer to varnish doped with conductive materials such as metal powder, giving the varnish layer 62 conductivity. Thus, the varnish layer 62 can connect the multiple conductive components 20 dispersed on the base layer group 10, improving the conductivity of the electrochromic device and thereby increasing the color-changing speed of the electrochromic device.

[0156] In this embodiment, the projection of each conductive component 20 on the base layer 10 onto the plane of the varnish layer 62 is located on the varnish layer 62. This ensures that the varnish layer 62 and each conductive component 20 of the base layer 10 are equally and effectively connected.

[0157] like Figures 21 to 23 As shown, in some embodiments, the transition layer group 60 may include a first busbar 61 and a varnish layer 62 stacked together. The first busbar 61 is located between the varnish layer 62 and the conductive component 20. Accordingly, step S170 may include:

[0158] S171, a first busbar 61 is arranged on the side of the conductive component 20 away from the substrate layer 11.

[0159] The first busbar 61 can be made of a conductive material with light transmittance, such as conductive adhesive or conductive liquid. The projection of each conductive component 20 in the base layer 10 onto the plane containing the first busbar 61 is located on the first busbar 61. This ensures a stable and reliable connection between the first busbar 61 and each conductive component 20 on the base layer 10.

[0160] In other embodiments, the first busbar 61 may be fabricated synchronously with the conductive dielectric 21 on the base layer 10.

[0161] S172, apply varnish to the side of the first busbar 61 away from the conductive component 20, and form a varnish layer 62.

[0162] The varnish layer 62 can be made of conductive or non-conductive varnish. Furthermore, the projection of the first busbar 61 onto the plane of the varnish layer 62 is always located on the varnish layer 62. This ensures that the surface roughness of the transition layer group 60 away from the conductive component 20 meets the requirements, guaranteeing smoothness during subsequent coating of the electrochromic layer 31 and the counter electrode layer 33.

[0163] like Figure 24 As shown, in some embodiments, the transition layer group 60 may include a first busbar 61. The first busbar 61 may be made of a conductive material with light transmittance, such as conductive adhesive or conductive liquid. Specifically, conductive material such as conductive adhesive or conductive liquid may be applied to the side of the conductive layer 12 away from the base layer 11 and cured to form the first busbar 61, making the first busbar 61 contact and electrically connect with each conductive component 20 on its base layer group 10. Furthermore, the projection of each conductive component 20 in the base layer group 10 onto the plane of the first busbar 61 is located on the first busbar 61, ensuring a stable and reliable connection between the first busbar 61 and each conductive component 20 on the base layer group 10. Thus, multiple conductive components 20 dispersed on the base layer group 10 can be connected through the first busbar 61, improving the conductivity of the electrochromic device and thereby increasing the color-changing speed of the electrochromic device. In other embodiments, the first busbar 61 may be fabricated simultaneously with the conductive medium 21 on the base layer group 10.

[0164] Understandably, both the first busbar 61 and the varnish layer 62 are translucent, allowing light to pass through. When subsequently laminating the two base layers 10, the electrolyte layer 32 in the color-changing layer group 30 can be easily cured using ultraviolet light, ensuring the performance of the electrochromic device.

[0165] In some embodiments, the thickness of both transition layer groups 60 is less than or equal to 15 μm along the thickness direction of the electrochromic device, to avoid the electrochromic layer 31 and the counter electrode layer 33 being too thick and affecting the color-changing speed of the electrochromic device. For example, the thickness of the two transition layer groups 60 can be set to 2 μm, 5 μm, 7.5 μm, 9.2 μm, 10 μm, 13 μm, 14.5 μm, 15 μm, etc.

[0166] Example 3

[0167] like Figure 25 and Figure 26 As shown, the embodiment provides a device fabrication method, which may include:

[0168] S210, a film substrate is provided, the film substrate includes a first base layer group 10a, a color-changing layer group 30 and a second base layer group 10b stacked in sequence, and the conductive layer 12 in both base layer groups 10 is disposed close to the color-changing layer group 30.

[0169] In some embodiments, the structures of the two base layer groups 10 can be configured to be symmetrical. Specifically, the first base layer group 10a may include a first base layer 11a and a first conductive layer 12a, with the first conductive layer 12a located between the first base layer 11a and the color-changing layer group 30. The second base layer group 10b may include a second base layer 11b and a second conductive layer 12b, with the second conductive layer 12b located between the second base layer 11b and the color-changing layer group 30.

[0170] The color-changing layer assembly 30 may include an electrochromic layer 31, an electrolyte layer 32, and a counter electrode layer 33, which are stacked sequentially. The surface of the electrochromic layer 31 away from the electrolyte layer 32 may be bonded to the surface of the first conductive layer 12a away from the first substrate layer 11a. Correspondingly, the surface of the counter electrode layer 33 away from the electrolyte layer 32 may be bonded to the surface of the second conductive layer 12b away from the second substrate layer 11b.

[0171] S220, a plurality of slots 101 are sequentially formed on the first base layer group 10a and the second base layer group 10b. In the same base layer group 10, the slots 101 extend from the side surface of the base layer 11 away from the conductive layer 12 to at least the side surface of the conductive layer 12 close to the base layer 11.

[0172] like Figure 27 As shown, specifically, the opening operation of the base layer group 10 can be performed starting from the side of the base layer 11 away from the conductive layer 12. Along the thickness direction of the electrochromic device, the slot 101 can penetrate the base layer 11 and the conductive layer 12 in the same base layer group 10. Correspondingly, a portion of the structure in the conductive layer 12 located on the inner wall of the slot 101 can be exposed.

[0173] In other embodiments, along the thickness direction of the electrochromic device, the slot 101 may penetrate the substrate layer 11, and the end of the slot 101 away from the substrate layer 11 may extend to the middle of the conductive layer 12 in the same group of base layers 10, that is, the slot 101 does not penetrate the conductive layer 12. Alternatively, along the thickness direction of the electrochromic device, the slot 101 only penetrates the substrate layer 11, and correspondingly, the position of the conductive layer 12 on the surface near the substrate layer 11 opposite to the slot 101 can be exposed.

[0174] In some embodiments, the number, position, and shape of the slots 101 on the first base layer group 10a and the second base layer group 10b can be the same as in Embodiment 1, and will not be repeated here.

[0175] In this embodiment, opening holes in the two base layers 10 after lamination can significantly reduce the impact on the flatness of the electrochromic layer 31 and the counter electrode layer 33, thus ensuring the working performance of the electrochromic device.

[0176] S230, fill the slot 101 with conductive component 20.

[0177] like Figure 28 As shown, specifically, conductive components 20 are sequentially filled into the slots 101 on the two base layer groups 10, ensuring that each slot 101 in the two base layer groups 10 is filled with conductive components 20. During processing, the conductive components 20 can be filled from the end of the slot 101 furthest from the color-changing layer group 30. In this embodiment, the specific method of filling the slots 101 with conductive components 20 is similar to that in Embodiment 1, and will not be repeated here.

[0178] like Figure 25 and Figure 29 As shown, the further processing method for the device also includes:

[0179] S240, a second busbar 41 is arranged on the side of the first base layer group 10a away from the color-changing layer group 30, and the second busbar 41 is connected to each conductive component 20 in the first base layer group 10a. A third busbar 42 is arranged on the side of the second base layer group 10b away from the color-changing layer group 30, and the third busbar 42 is connected to each conductive component 20 in the second base layer group 10b.

[0180] In this embodiment, the arrangement of the second busbar 41 and the third busbar 42 can be the same as in Embodiment 1, and will not be repeated here.

[0181] like Figure 25 As shown, the device fabrication method also includes:

[0182] S250, equipped with protective component 50.

[0183] In this embodiment, the specific configuration of the protective component 50 can be the same as that in Embodiment 1, and will not be repeated here.

[0184] Example 4

[0185] The embodiment also provides a device, which can be manufactured by the device fabrication method provided in the embodiment. The device may be an electrochromic device.

[0186] like Figure 19 , Figure 26 and Figure 27 As shown, the electrochromic device may include a first base layer group 10a, a color-changing layer group 30, and a second base layer group 10b stacked sequentially.

[0187] The first base layer group 10a includes a first substrate layer 11a and a first conductive layer 12a. The first conductive layer 12a is located between the first substrate layer 11a and the color-changing layer group 30. The second base layer group 10b may include a second substrate layer 11b and a second conductive layer 12b, with the second conductive layer 12b located between the second substrate layer 11b and the color-changing layer group 30.

[0188] The color-changing layer group 30 may include an electrochromic layer 31, an electrolyte layer 32, and a counter electrode layer 33 stacked sequentially. The electrochromic layer 31 is located between the electrolyte layer 32 and the first conductive layer 12a.

[0189] In some embodiments, both the first base layer group 10a and the second base layer group 10b have a plurality of slots 101 formed thereon. In the first base layer group 10a, the slots 101 may extend at least from the side of the first base layer 11a away from the first conductive layer 12a to the side of the first conductive layer 12a close to the first base layer 11a. In some embodiments, the slots 101 may penetrate both the first base layer 11a and the first conductive layer 12a.

[0190] In other embodiments, the slot 101 may penetrate the first substrate layer 11a. Along the thickness direction of the electrochromic device, the slot 101 may also extend to the middle of the first conductive layer 12a.

[0191] In the second base layer group 10b, the slot 101 may extend at least from the side of the second base layer 11b away from the second conductive layer 12b to the side of the second conductive layer 12b close to the second base layer 11b. In some embodiments, the slot 101 may penetrate both the second base layer 11b and the second conductive layer 12b.

[0192] In other embodiments, the slot 101 may penetrate the second substrate layer 11b. Along the thickness direction of the electrochromic device, the slot 101 may also extend to the middle of the second conductive layer 12b.

[0193] like Figure 6 As shown, in some embodiments, a plurality of slots 101 may be formed on the first base layer group 10a. The plurality of slots 101 may be disposed near one side of the electrochromic device and may be arranged sequentially along that side. For example, the plurality of slots 101 may be disposed near one side along the width direction of the electrochromic device and are evenly spaced.

[0194] like Figure 7As shown, in some embodiments, the plurality of slots 101 may be disposed near one side along the length of the electrochromic device. Of course, in other embodiments, the plurality of slots 101 may also be disposed near any two or three sides of the electrochromic device, that is, the plurality of slots 101 may be distributed near any two or three sides of the electrochromic device. Alternatively, the plurality of slots 101 may be disposed around the circumference of the electrochromic device.

[0195] like Figure 6 As shown, in some embodiments, the slot 101 can be a circular hole. In embodiments, the distance d between two adjacent slots 101 can be set to 2.0mm to 30.0mm. For example, the distance d between two adjacent slots 101 can be set to 2.0mm, 2.75mm, 5.0mm, 8.5mm, 12.0mm, 16.0mm, 20.5mm, 24.0mm, 26.5mm, 28.0mm, 30.0mm, etc. The distance d between two adjacent slots 101 can refer to the distance between the centers of the two slots 101.

[0196] In some embodiments, the distance m between the slot 101 and the side of the nearby electrochromic device can be set from 0.5 mm to 20.0 mm. Distance m refers to the distance between the center of the slot 101 closest to the side and the side itself. For example, the distance m between the slot 101 and the side of the nearby electrochromic device can be set to 0.5 mm, 1.5 mm, 5.2 mm, 6.0 mm, 8.0 mm, 11.0 mm, 14.5 mm, 16.0 mm, 17.0 mm, 19.5 mm, 20.0 mm, etc.

[0197] like Figure 8 As shown, in other embodiments, the slot 101 can be a circular hole, an elliptical hole, an annular hole, or other arc-shaped hole, or a polygonal hole such as a triangular hole, a quadrilateral hole, a pentagonal hole, or a pentagram. Multiple slots 101 can be arranged in an ordered or disordered manner within a layout area, which can be located near one side of the electrochromic device and extend along that side.

[0198] like Figure 6As shown in the embodiment, along the length direction of the electrochromic device, the size n of the slot 101 can be set to 0.3mm to 3.0mm. For example, the size n of the slot 101 can be set to 0.3mm, 0.45mm, 0.9mm, 1.2mm, 1.55mm, 2.1mm, 2.5mm, 2.75mm, 2.8mm, 3.0mm, etc. Along the width direction of the electrochromic device, the size h of the slot 101 can be set to 0.3mm to 5.0mm. For example, the size h of the slot 101 can be set to 0.3mm, 0.6mm, 1.0mm, 1.3mm, 1.5mm, 1.85mm, 2.0mm, 2.3mm, 2.65mm, 2.9mm, 3.4mm, 3.5mm, 4.0mm, 4.2mm, 4.6mm, 4.85mm, 5.0mm, etc. The length direction of the electrochromic device can be parallel to the width direction of the roll used to process the first base layer group 10a. The width direction of the electrochromic device can be parallel to the winding direction of the roll used to process the first base layer group 10a.

[0199] like Figure 8 As shown, in some embodiments, the slot 101 can be an elongated hole, and multiple slots 101 can be arranged in multiple rows. A plurality of slots 101 arranged along the width direction of the electrochromic device can be considered as one row. Along the width direction of the electrochromic device. Adjacent rows of slots 101 can be staggered.

[0200] like Figure 8 As shown, in some other embodiments, a slot 101 may be formed on the first base layer 10a. The slot 101 may be disposed near one side of the electrochromic device, and the slot 101 may be an elongated hole extending along that side.

[0201] like Figure 15 and Figure 16 As shown, each slot 101 is further provided with a conductive component 20, which can be electrically connected to the conductive layer 12 it contacts. Thus, the conductive layer 12 can be electrically connected through the conductive component 20. In some embodiments, the conductive component 20 may include a conductive medium 21, and the conductive medium 21 may fill the slot 101.

[0202] like Figure 13 As shown, in some embodiments, the conductive component 20 may include a conductive medium 21 and a fixing member 22. The conductive medium 21 may be disposed circumferentially around the fixing member 22, and the conductive medium 21 may be sandwiched between the fixing member 22 and the inner wall of the slot 101. Along the thickness direction of the electrochromic device, the size of the conductive component 20 may be equal to the depth of the slot 101.

[0203] like Figure 16As shown, in some embodiments, a second busbar 41 is further provided on the side of the first base layer group 10a away from the color-changing layer group 30, and the second busbar 41 is electrically connected to each conductive component 20 in the first base layer group 10a. In the embodiments, the projection of each conductive component 20 on the first base layer group 10a onto the plane where the second busbar 41 is located is located on the second busbar 41.

[0204] Correspondingly, a third busbar 42 is also provided on the side of the second base layer group 10b away from the color-changing layer group 30, and the third busbar 42 is electrically connected to each conductive component 20 in the second base layer group 10b. In the embodiment, the projection of each conductive component 20 on the second base layer group 10b onto the plane of the third busbar 42 is located on the third busbar 42.

[0205] like Figure 20 As shown, in some embodiments, a first transition layer group 60a is further provided on the side of the first conductive layer 12a away from the first base layer 11a, and the first transition layer group 60a covers all conductive components 20 in the first base layer group 10a. Correspondingly, a second transition layer group 60b is provided on the side of the second conductive layer 12b away from the second base layer 11b, and the second transition layer group 60b covers all conductive components 20 in the second base layer group 10b. In embodiments, the structures of the two transition layer groups 60 can be identical.

[0206] In some embodiments, the transition layer group 60 may include a varnish layer 62. The projection of each conductive component 20 on the same base layer group 10 onto the plane of the varnish layer 62 is located on the varnish layer 62. In some embodiments, the varnish layer 62 may be made of conductive varnish. Thus, multiple conductive components 20 dispersed on the same base layer group 10 can be connected through the varnish layer 62, improving the conductivity of the electrochromic device and thereby increasing the color-changing speed of the electrochromic device.

[0207] like Figure 22 As shown, in some embodiments, the transition layer group 60 includes a first busbar 61 and a varnish layer 62 stacked together, wherein the first busbar 61 is located between the varnish layer 62 and the conductive component 20, that is, the varnish layer 62 is close to the electrochromic layer group 30. The projection of each conductive component 20 in the same base layer group 10 onto the plane where the first busbar 61 is located is on the first busbar 61. Furthermore, the projection of the first busbar 61 onto the plane where the varnish layer 62 is located is on the varnish layer 62.

[0208] like Figure 24As shown, in some embodiments, the transition layer group 60 may include a first busbar 61. Each conductive component 20 on the same base layer group 10 is electrically connected to the corresponding first busbar 61. Furthermore, the projection of each conductive component 20 on the same base layer group 10 onto the plane of the first busbar 61 is located on the first busbar 61. Thus, multiple conductive components 20 dispersed on the base layer group 10 can be connected via the first busbar 61, improving the conduction efficiency of the electrochromic device and thereby increasing the color-changing speed of the electrochromic device.

[0209] In this embodiment, the transition layer group 60 is transparent, meaning that light can pass through it. During the fabrication of the electrochromic device, the electrolyte layer 32 in the color-changing layer group 30 can be easily cured by ultraviolet light to ensure the performance of the electrochromic device.

[0210] In some embodiments, the thickness of both transition layer groups 60 is less than or equal to 15 μm along the thickness direction of the electrochromic device, to avoid the electrochromic layer 31 and the counter electrode layer 33 being too thick and affecting the color-changing speed of the electrochromic device. For example, the thickness of the two transition layer groups 60 can be set to 2 μm, 5 μm, 7.5 μm, 9.2 μm, 10 μm, 13 μm, 14.5 μm, 15 μm, etc.

[0211] like Figure 19 As shown, in some embodiments, the electrochromic device further includes a protective component 50. The protective component 50 may include a first base plate 51a, a second base plate 51b, and a sealing element 52. The first base plate 51a is bonded to the side of the first base layer 11a away from the first conductive layer 12a via a first adhesive layer 53a. The second base plate 51b is bonded to the side of the second base layer 11b away from the second conductive layer 12b via a second adhesive layer 53b. The sealing element 52 may be disposed between the first base plate 51a and the second base plate 51b, and the sealing element 52 is also disposed circumferentially around the color-changing layer group 30 and the two base layer groups 10. That is, the color-changing layer group 30 and the two base layer groups 10 are enclosed in the protective component 50, which provides them with protection. Simultaneously, the protective component 50 can also prevent moisture and other contaminants from penetrating the color-changing layer group 30 and the two base layer groups 10, thereby achieving a moisture isolation effect.

[0212] Example 5

[0213] The embodiments also provide a dimming device, including the electrochromic device provided in any of the embodiments. In the embodiments, the dimming device may be one of the following: a dimming window, a rearview mirror, a display panel, etc.

[0214] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A method of processing a device, characterized by, The device processing method comprises: providing at least one diaphragm substrate, the diaphragm substrate comprising at least one base layer group, the base layer group comprising a conductive layer and a substrate layer arranged in a stack; opening a plurality of slots in the base layer group, the slots extending through the conductive layer and the substrate layer; filling the slots with a conductive component; providing a transition layer group on the side of the conductive component away from the substrate layer; wherein the roughness of the surface of the transition layer group away from the conductive component is less than the roughness of the surface of the conductive component close to the conductive layer.

2. The device processing method of claim 1, wherein, The device processing method comprises: providing two diaphragm substrates, each of the two diaphragm substrates comprising a base layer group; opening a plurality of slots in each of the base layer groups, in the same base layer group, the slots extending from the side of the substrate layer away from the conductive layer to the side of the conductive layer close to the substrate layer.

3. The device processing method of claim 2, wherein, opening a plurality of slots in the base layer group from the side of the substrate layer away from the conductive layer.

4. The device processing method of claim 2, wherein The opening of a plurality of slots in each of the base layer groups comprises: applying a mask layer on the side of the conductive layer away from the substrate layer; opening a plurality of slots in the base layer group from the side of the conductive layer away from the substrate layer, the slots extending through the conductive layer and the substrate layer in the same base layer group; removing the mask layer.

5. The device processing method of claim 1, wherein The providing of a transition layer group on the side of the conductive component away from the substrate layer comprises: applying a varnish layer on the side of the conductive component away from the substrate layer.

6. The device processing method of claim 1, wherein The providing of a transition layer group on the side of the conductive component away from the substrate layer comprises: arranging a first bus bar on the side of the conductive component away from the substrate layer; applying a varnish layer on the side of the first bus bar away from the conductive component.

7. The device processing method of claim 2, wherein The slots extend through the conductive layer and the substrate layer in the same base layer group, and the device processing method further comprises: arranging a first bus bar on the side of the conductive component away from the substrate layer.

8. A device processing method according to claim 6 or 7, wherein The first bus bar is made synchronously with the conductive component in contact with the first bus bar.

9. The device processing method according to any one of claims 2 to 7, wherein The device processing method further comprises: combining the two base layer groups and forming a color-changing layer group between the two conductive layers in the two base layer groups.

10. The device processing method of claim 9, wherein, The combining of the two base layer groups and the forming of a color-changing layer group between the two conductive layers in the two base layer groups comprises: applying an electrochromic layer on the side of the conductive layer away from the substrate layer in one base layer group to form an electrochromic substrate; applying a counter electrode layer on the side of the conductive layer away from the substrate layer in another base layer group to form a counter electrode substrate; bonding the counter electrode substrate to the electrochromic substrate through an electrolyte, and forming an electrolyte layer between the electrochromic layer and the counter electrode layer.

11. The device processing method of claim 2, wherein The device processing method further comprises: arranging a second bus bar on the side of the substrate layer away from the conductive layer in one base layer group, and connecting the second bus bar to each of the conductive components in the base layer group; In another said base layer group, a third bus bar is arranged on the side of the base layer away from the conductive layer, and the third bus bar is connected with each said conductive component in the base layer group.

12. The device processing method of claim 1, wherein The device processing method comprises: A said film substrate is provided, which comprises a first base layer group, a color-changing layer group and a second base layer group arranged in sequence, and the conductive layer in each said base layer group is close to the color-changing layer group; A plurality of said slots are opened on the first base layer group and the second base layer group in sequence, and in the same said base layer group, the slot extends from the side surface of the base layer away from the conductive layer to at least the side surface of the conductive layer close to the base layer.

13. The device processing method of claim 12, wherein, The device processing method further comprises: A second bus bar is arranged on the side of the first base layer group away from the color-changing layer group, and the second bus bar is connected with each said conductive component in the first base layer group; A third bus bar is arranged on the side of the second base layer group away from the color-changing layer group, and the third bus bar is connected with each said conductive component in the second base layer group.

14. The device processing method of claim 13, wherein, The second bus bar is made synchronously with the conductive components on the first base layer group; The third bus bar is made synchronously with the conductive components on the second base layer group.

15. The device processing method of claim 1, 2, or 12, wherein, The filling of the conductive components in the slots comprises: A conductive medium is applied on the inner wall of the slot; A curing glue is filled in the gap of the conductive medium.

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