Sputtering equipment

Abstract

The present invention supplies gas over the entire surface of the target. The vacuum container (2) of the sputtering apparatus (1) includes at least one target holder (32) for holding the target (30). The target holder includes: a gas inlet (51) for introducing gas (10); and a pair of gas outlets (54) disposed at opposing positions on at least a portion of the periphery of the target and for releasing gas into the vacuum container.

Description

Technical Field

[0001] This invention relates to a sputtering apparatus. Background Technology

[0002] Various sputtering apparatuses have been proposed since the past. One example of a sputtering apparatus is the magnetron sputtering apparatus. In this apparatus, a magnetic field is formed on the surface of the target by a magnet positioned on the back of the target, ionizing the gas within the magnetic field. The ions of the ionized gas then collide with the target. Through these collisions, sputtering particles are ejected from the target and deposited onto a substrate facing the target.

[0003] It is known that in sputtering apparatuses, uneven film thickness can occur on substrates due to variations in the density of the gas on the target. Patent Document 1 discloses an example of a technique for suppressing this unevenness. In the sputtering apparatus of Patent Document 1, two targets are arranged in a group within a chamber where sputtering gas is introduced. Furthermore, the sputtering apparatus of Patent Document 1 is provided with gas inlets that introduce reactive gas from both sides of the group of targets and exhaust ports that exhaust the reactive gas from between the group of targets.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2013-49884 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] However, in the sputtering apparatus of Patent Document 1, one of the targets in a set of targets has a gas inlet on one long side and an exhaust port on the long side facing the long side. Therefore, the supply of reactive gas to the target may become uneven in the direction perpendicular to the two long sides (the width direction of the target). Consequently, the amount of sputtered particles ejected across the entire surface of the target may be uneven. As a result, the film thickness formed on the substrate may be uneven.

[0009] Therefore, one aspect of the present invention aims to realize a sputtering apparatus capable of supplying gas throughout the entire surface of a target.

[0010] Technical means to solve the problem

[0011] To address the aforementioned problem, one aspect of the present invention provides a sputtering apparatus for sputtering a target within a vacuum container to form a film on a substrate. In the sputtering apparatus, the vacuum container includes at least one holding portion for holding the target. The holding portion includes: a gas inlet portion for introducing gas into the holding portion; and a pair of openings that, when viewed from a vertical direction at a target configuration position in the holding portion, extend around at least a portion of the target configuration position and are positioned opposite each other across the target configuration position, releasing the gas introduced into the holding portion into the vacuum container.

[0012] The effects of the invention

[0013] According to one aspect of the invention, gas can be supplied throughout the entire surface of the target. Attached Figure Description

[0014] Figure 1 This is a diagram showing an example of the overall structure of the sputtering apparatus according to Embodiment 1.

[0015] Figure 2 It is the target holder of embodiment 1. Figure 1 The image shows the AA arrow view, specifically a top view with the target holder assembled.

[0016] Figure 3 It is the target holder of embodiment 1. Figure 1 The image shows a BB arrow view, specifically a bottom view with the target holder assembled.

[0017] Figure 4 It is the target holder of embodiment 1. Figure 1 CC arrow view in the middle.

[0018] Figure 5 It is the target holder of embodiment 1. Figure 1 The DD arrow view in the image.

[0019] Figure 6 It is the target holder of embodiment 1 Figure 1 The EE arrow view in the image.

[0020] Figure 7 It is the target holder of embodiment 1. Figure 2 FF cross-section diagram.

[0021] Figure 8 It is the target holder of embodiment 1. Figure 2 GG cross-section diagram.

[0022] Figure 9 It is the target holder of embodiment 1. Figure 2 An enlarged view of section H in the image.

[0023] Figure 10 This is a cross-sectional view showing the detailed structure inside the vacuum container of Embodiment 2.

[0024] Figure 11 It is the target holder of embodiment 2. Figure 10 The image shows the II arrow view, specifically the bottom view with the target holder assembled.

[0025] Figure 12 This is a schematic diagram of the magnetic field strength adjustment plate in Embodiment 1 and Embodiment 3.

[0026] Explanation of symbols

[0027] 1: Sputtering equipment

[0028] 2: Vacuum container

[0029] 3. 320: Upper surface

[0030] 12: Substrate

[0031] 30: Target

[0032] 32: Target holder (holding part)

[0033] 51: Gas Inlet Section

[0034] 52: Gas Path (Main Path)

[0035] 53: Gas branching path (gas path, branching path)

[0036] 54: Gas outlet (opening)

[0037] 55: Exhaust port (exhaust section)

[0038] 61, 610: Magnetic field strength adjustment plate (magnetic adjustment component)

[0039] 61a, 61c, 61d, 61e: Gaps

[0040] 61b: Elongated hole

[0041] 62: Magnetic path bolt (fixing component)

[0042] 63: First magnetic plate (magnetic component)

[0043] 65: Magnet

[0044] 66: Second magnetic plate (magnetic component)

[0045] 67: Third magnetic plate (magnetic component)

[0046] 611, 612, 613: Magnetic field plate (magnetic adjustment component) Detailed Implementation

[0047] [Implementation Method 1]

[0048] The following uses Figures 1-9 A specific embodiment of the present invention will be described in detail below.

[0049] <Overall Structure of the Sputtering Apparatus>

[0050] First, use Figure 1 The overall structure of the sputtering apparatus 1 in this embodiment will be described. Figure 1 This is a diagram showing an example of the overall structure of the sputtering apparatus 1 according to Embodiment 1.

[0051] like Figure 1 As shown, the sputtering apparatus 1 is an apparatus for sputtering a target 30 onto a substrate 12 within a vacuum container 2 in which a sputtering gas 10 is introduced.

[0052] Specifically, the sputtering apparatus 1 includes a vacuum container 2 that is evacuated by a vacuum exhaust device 4. The vacuum container 2 is electrically grounded, and a sputtering gas 10 is introduced into it. The gas 10 is supplied from a gas source 6 to a target holder 32 via a gas inlet pipe 50 and a gas inlet section 51, while its flow rate is adjusted by a flow regulator 8. The gas 10 is then introduced into the vacuum container 2 via the target holder 32. Insulating portions 43 are provided between the gas inlet section 51 and the upper surface portion 3 of the vacuum container 2, and between the gas inlet section 51 and the target holder 32. The gas 10 is, for example, argon. In the case of reactive sputtering, the gas 10 may also be a mixture of argon and an active gas (e.g., oxygen, nitrogen). The active gas is also called a reactive gas.

[0053] A substrate holder 14 is provided inside the vacuum container 2 to hold the substrate 12. In this embodiment, the sputtering apparatus 1 includes a substrate bias power supply 16. The substrate bias power supply 16 applies a substrate bias voltage Vs to the substrate holder 14. The substrate bias voltage Vs can be a negative DC voltage, a negative pulse voltage, an AC voltage, etc. In addition, the substrate holder 14 can be electrically grounded when no substrate bias voltage Vs is applied to the substrate 12. Furthermore, the symbol 40 is an insulating part with a vacuum sealing function. In addition, the substrate 12 is a workpiece to be processed by forming a thin film from sputtered particles emitted from the target 30. As the substrate 12, a glass substrate, a semiconductor substrate, etc., can be used, but it is not limited to these.

[0054] Additionally, on the upper surface portion 3 of the vacuum container 2, a target holder (holding portion) 32 for holding the target 30 is provided at a position facing the substrate holder 14. Figure 1In the upper surface portion 3, three target holders 32 are included, but the number of target holders 32 is not limited, as long as at least one target holder 32 is included in the upper surface portion 3. The target 30 is held inside the vacuum container 2 in a position facing the substrate 12 by the target holders 32. The planar shape of the target 30 is, for example, rectangular, but not limited to this; it can also be circular, etc.

[0055] The material of the target 30 can correspond to the film formed on the substrate 12. As an example, when an oxide semiconductor thin film is formed on the substrate 12, the target 30 may be an oxide semiconductor composed of, for example, In-Ga-Zn-O (indium-gallium-zinc-oxygen) or In-Sn-Zn-O (indium-tin-zinc-oxygen). However, the material of the target 30 is not limited to these.

[0056] At target 30, a target bias power supply 34 is connected via target holder 32. The target bias power supply 34 supplies (applies) a target bias voltage Vt to target 30. The target bias voltage Vt is the voltage used to introduce ions (positive ions in this application) from plasma 22 to target 30 for sputtering, and is, for example, a negative DC voltage or an AC voltage. When the target bias voltage Vt is set to an AC voltage, the AC voltage can be, for example, a high-frequency voltage in the MHz range, such as 13.56 MHz. Alternatively, the target bias voltage Vt can also be a low-frequency voltage (e.g., around 10 kHz to 100 kHz) lower than the output of the high-frequency power supply 24 (e.g., 13.56 MHz). Setting the target bias voltage Vt to a low-frequency voltage makes it easier to avoid interference with the plasma generation operation using the high-frequency power supply 24.

[0057] Furthermore, an antenna 20 is disposed inside the vacuum container 2. In this embodiment, four antennas 20 are arranged facing each other from both sides with respect to the target 30 held by the target holder 32.

[0058] Each antenna 20 is connected to a high-frequency power supply 24 via an integrated circuit 26. Specifically, the integrated circuit 26 is connected to one end of each antenna 20, and the other end of each antenna 20 is electrically grounded. One end of the high-frequency power supply 24 is also electrically grounded. Furthermore, symbol 41 represents an insulating part with a vacuum-sealed function. Alternatively, the high-frequency power supply 24 and the integrated circuit 26 may be provided separately for each antenna 20.

[0059] The high-frequency power supply 24 supplies high-frequency power Pr to each antenna 20. Specifically, by supplying high-frequency power Pr to each antenna 20 in parallel, an inductively coupled plasma 22 is generated near the surface of the target 30. The frequency of the high-frequency power Pr output from the high-frequency power supply 24 is, for example, a typical 13.56 MHz, but is not limited thereto.

[0060] In addition, the sputtering apparatus 1 includes a control device 46. The control device 46 provides unified control over all parts of the sputtering apparatus 1. In particular, the control device 46 controls the power supply from the high-frequency power supply 24 and the target bias power supply 34. Furthermore, the control device 46 controls the flow rate of the gas 10 introduced into the vacuum container 2 by controlling the flow rate regulator 8.

[0061] In addition, the gas inlet pipe 50, the gas insulation pipe 501, and the gas inlet section 51 connected to the flow regulator 8 are provided in each target holder 32, but... Figure 1 Its illustration is omitted. Additionally, the high-frequency power supply 24 is connected to each antenna 20 via integrated circuit 26, but... Figure 1 Its illustration is omitted. Furthermore, the target bias power supply 34 is connected to the target 30 held in each target holder 32, but... Figure 1 Its illustration is omitted.

[0062] <Structure near the upper surface of the vacuum container>

[0063] Next, use Figure 1 The specific structure near the upper surface portion 3 of the vacuum container 2 is described in detail. Near the upper surface portion 3, there are mainly […].

[0064] • Antenna 20 that generates plasma 22 near the surface of target 30

[0065] • Target holder 32 for holding target 30.

[0066] (antenna)

[0067] like Figure 1 As shown, the antenna 20 is positioned near the target holder 32 inside the vacuum container 2 (specifically, near the surface of the target 30 held by the target holder 32). In this embodiment, as... Figure 1 As shown, multiple antennas 20 are arranged with the target 30 held by the target holder 32 on both sides, for example, along the sides of the rectangular target 30.

[0068] By configuring multiple antennas 20 in this way, plasma 22 can be generated facing the entire surface of the target 30. This allows for sputtering of the entire surface of the target 30, improving its utilization efficiency. However, if this is not considered, a single antenna 20 can also be configured, for example, along one side of the target 30.

[0069] Additionally, each antenna 20 is connected to the integrated circuit 26. Each antenna 20 can be a solid structure with a central blockage, or a hollow structure (e.g., tubular or cylindrical). In the case of a hollow structure, it can also be configured as a water-cooled structure with cooling water channels inside, cooling each antenna 20 by circulating cooling water. Alternatively, each antenna 20 can also be configured with a capacitor inserted in the middle of the antenna conductor.

[0070] Furthermore, the shape of antenna 20 is not limited to the shapes described above; it can be rod-shaped, U-shaped, C-shaped, coil-shaped, etc. Additionally, the shape of antenna 20 can be set to correspond to the planar shape of target 30. For example, if the planar shape of target 30 is circular, the planar shape of antenna 20 can also be set to circular.

[0071] In addition, the antenna 20 has a structure in which the antenna conductors are housed inside the insulating component, regardless of its structure or shape.

[0072] The structure or shape of the antenna 20 described above is just one example; the antenna 20 only needs to have a structure or shape that can generate plasma 22.

[0073] In addition, high-frequency power Pr is supplied to antenna 20 independently of the target bias voltage Vt supplied to target 30. Specifically, control device 46 (see reference) Figure 1 The target bias power supply 34, which supplies the target bias voltage Vt to the target 30, and the high-frequency power supply 24, which supplies the high-frequency power Pr to the antenna 20, are independently controlled.

[0074] (Structure of the target holder)

[0075] The target holder 32 is composed of structural members defining the structure of the target holder 32, a gas member for introducing gas 10 near the target 30, and a magnetic circuit member for forming a magnetic field near the surface of the target 30. In addition, the target holder 32 is composed of an electrode member for applying voltage to the target holder 32, an insulating member for insulating the electrode member, and a cooling member for cooling the target holder 32.

[0076] use Figures 2-8 The components of the target holder 32 described above will be explained. Figure 2 It is the target holder 32 of embodiment 1. Figure 1 The image shows the AA arrow view, specifically a top view with the target holder 32 assembled. Figure 3 It is the target holder 32 of embodiment 1. Figure 1 The image shows a view of the BB arrow, specifically a bottom view with the target holder 32 assembled. Figure 4 It is the target holder 32 of embodiment 1. Figure 1 CC arrow view in the middle. Figure 5 It is the target holder 32 of embodiment 1. Figure 1 The DD arrow view in the image. Figure 6 It is the target holder 32 of embodiment 1. Figure 1 The EE arrow view in the image. Figure 7 It is the target holder 32 of embodiment 1. Figure 2 FF cross-section diagram. Figure 8 It is the target holder 32 of embodiment 1. Figure 2 GG cross-section diagram.

[0077] In addition, Figure 3 For ease of explanation, the illustration of the target 30 held by the target holder 32 is omitted.

[0078] (Structural components of the target holder)

[0079] First, as a structural component of the target holder 32, for example, Figure 7 and Figure 8 As shown, it includes a target body 321 and a backplate 322.

[0080] The target body 321 is a component that defines the various parts of the target holder 32. The target body 321 has grooves and holes that define the various parts, or grooves and holes for assembling the various parts. The functions and structures of the various parts will be described later.

[0081] The back plate 322 is a plate used to mount the target 30. The position on the surface of the back plate 322 facing the substrate holder 14 where the target 30 is mounted (configured) is called the target configuration position 30a (see also [reference]). Figure 3 and Figure 6 The backplate 322 is disposed at the lower part of the target body 321. A portion of a gas component (e.g., a gas outlet 54) is formed on the backplate 322.

[0082] The shape (planar shape) of the target body 321 and the back plate 322 when viewed from the vertical direction only needs to be designed to be consistent with the shape of the target 30 to which it is to be installed. For example, if the planar shape of the installed target 30 is rectangular, then the planar shapes of the target body 321 and the back plate 322 only need to be designed to be rectangular.

[0083] When the planar shape of the target body 321 and the back plate 322 is rectangular, the corners of the target body 321 and the back plate 322 may also be chamfered. In this embodiment, the planar shape of the target body 321 and the back plate 322 is rectangular, but the corners of the target body 321 and the back plate 322 are R-shaped. This shape is due to limitations in the processing of the upper surface portion 3 of the target body 321 and the back plate 322, and to reduce the risk of abnormal discharge at the edges of the target body 321 and the back plate 322. However, if this is not considered, the planar shape of the target body 321 and the back plate 322 may also be a rectangular shape with unchamfered corners.

[0084] Furthermore, in this specification, when the planar shape of the target body 321, the planar shape of the back plate 322 (the planar shape of the target placement position 30a), and the planar shape of the target 30 are rectangular, it should be noted that they have the following two meanings. That is, in this specification, the rectangular shape includes (i) a shape with un-chamfered corners (a rectangular shape in the general sense) and (ii) a shape with chamfered corners.

[0085] In this embodiment, the length direction of the target body 321 and the back plate 322 is along the Y-axis direction (for example, in...). Figure 7 and Figure 8 (The center extends in the direction of the paper's depth). That is, for example, as... Figure 3 As shown, the target configuration position 30a extends along the Y-axis in the length direction (long side), and the target 30 is mounted on the back plate 322 in such a way that the target 30 extends along the Y-axis in the length direction (long side).

[0086] (Gas component of the target holder)

[0087] like Figure 7 As shown, the gas components of the target holder 32 include: a gas inlet pipe 50, a gas insulating pipe 501, a gas inlet section 51, a gas path (main path) 52, a gas path cover 521, a throttling orifice 522, a gas branch path (branch path) 53, and a gas outlet (opening) 54.

[0088] The gas inlet pipe 50 is the path (pipeline) for introducing the gas 10 supplied from the gas source 6 into the target holder 32, and is connected between the gas source 6 and the gas inlet section 51 (see also...). Figure 1 Additionally, such as Figure 1 As shown, a flow regulator 8 is installed midway through the gas inlet pipe 50. Additionally, the gas insulation pipe 501 is used to insulate the gas inlet pipe 50 from the gas inlet section 51.

[0089] The gas inlet 51 is a path formed in the target body 321 for introducing gas 10 into the target holder 32, and connects the gas inlet pipe 50 to the gas path 52. One gas inlet 51 is provided for each target holder 32. Figure 2 As shown, the gas inlet 51 is provided at the end of each target holder 32.

[0090] Gas path 52 is a path formed on the target body 321 that receives gas 10 introduced from gas inlet 51 and directs it to gas branch path 53, and communicates with both gas inlet 51 and gas branch path 53. In this embodiment, gas path 52 is a path formed on the upper surface side of the target body 321, near the center in the width direction (X-axis direction) of the target body 321 when viewed from the vertical direction, and extending along the length direction of the target body 321 (see reference). Figure 6 The gas 10 introduced from the gas inlet 51 is dispersed along the length of the target body 321 through the gas path 52.

[0091] The gas path cover 521 is a cover for the gas path 52. By using the gas path cover 521, the possibility of gas 10 flowing out of the gas inlet 51 and the gas branch path 53 can be reduced (see reference). Figure 5 Additionally, the gas path cover 521 includes a throttling orifice 522 that allows gas 10 from the gas inlet 51 to flow into the gas path 52. By providing the throttling orifice 522 in the gas path cover 521, the gas pressure upstream of the throttling orifice 522 can be increased.

[0092] Here, the gas inlet 51 has a vacuum sealing function by pressing the insulating part 43 into the flange portion of the gas inlet 51. Furthermore, the gas inlet 51 is electrically connected to the gas path cover 521 and has the same potential as the target bias voltage Vt. Additionally, the gas inlet pipe 50 and the gas inlet 51 are insulated from each other by a gas insulating pipe 501. Therefore, a discharge can occur in the gas 10 due to the high-frequency potential generated in the gas inlet pipe 50 and the gas inlet 51, and the pressure of the gas 10 in the gas inlet pipe 50 and the gas inlet 51. To prevent this discharge, the length of the gas inlet pipe 50 is specified, and a throttling orifice 522 is provided in the gas path cover 521.

[0093] Gas branch paths 53 are formed on the target body 321 and guide the gas 10 introduced from gas path 52 to gas outlet 54, and are connected to both gas path 52 and gas outlet 54. In this embodiment, multiple gas branch paths 53 are formed at positions facing each other across gas path 52 in the width direction (X-axis direction) of the target body 321 (see reference). Figure 6 ).

[0094] Specifically, if Figure 6 As shown, one end of the gas branch path 53 is connected to the gas path 52 on each of the two sides of the gas path 52 extending along the length direction (Y-axis direction). In addition, the other end of the gas branch path 53 is connected to the gas outlet 54 on the lower surface of the target body 321 and at a position facing each other across the target arrangement position 30a in the width direction of the target body 321.

[0095] Gas outlet 54 is an opening formed on the back plate 322 that releases gas 10 introduced from the gas branch path 53 into the interior of the vacuum container 2, and is connected to the gas branch path 53. In this embodiment, when viewed from a vertical direction, multiple gas outlets 54 are provided along the entire length of the opposing long sides of the target placement position 30a (see reference). Figure 6 Furthermore, in this embodiment, the plurality of gas outlets 54 are arranged approximately equally along each long side of the target arrangement position 30a, and are arranged such that the gas outlets 54 provided along each long side face each other. Therefore, the gas 10 introduced by the gas inlet 51 is supplied to the target 30 mounted at the target arrangement position 30a in a manner that is approximately uniformly distributed across the entire surface of the target 30 from both long sides of the target 30. Therefore, compared to the case where the gas 10 is supplied from only one side of the target 30, the gas 10 can be supplied approximately uniformly to the entire surface of the target 30.

[0096] Furthermore, the configuration position and number of gas outlets 54 are not limited to those described above, as long as they are adjusted to supply the gas 10 emitted from the gas outlets 54 to the entire surface of the target 30 in a substantially uniform manner.

[0097] For example, the gas outlet 54 can be provided over both short sides of the target configuration position 30a, or it can be provided on both the long side and the short side of the target configuration position 30a. However, providing it on the long side of the target configuration position 30a makes it easier to supply the gas 10 to the entire surface of the target 30 in a substantially uniform manner.

[0098] Furthermore, a pair of gas outlets 54 do not necessarily need to be arranged facing each other. For example, the number of gas outlets 54 on opposite sides of the target configuration position 30a may be different. In addition, the size of the opening of each gas outlet 54 may be different. Furthermore, a gas outlet 54 may also be arranged along the edge of the target 30.

[0099] That is, the gas outlet 54 only needs to cover at least a portion of the area around the target configuration position 30a in such a way that the gas 10 is supplied substantially uniformly to the entire surface of the target 30 and is located at a position opposite to the target configuration position 30a.

[0100] Here, the thickness (cross-sectional area in the YZ section) of gas branch path 53 is smaller than the thickness (cross-sectional area in the XZ section) of gas path 52 (refer to...). Figure 6 , Figure 7 Therefore, the gas 10 flowing in the gas branch path 53 is more difficult to flow than the gas 10 flowing in the gas path 52. Therefore, the pressure of the gas 10 in the gas path 52 can be increased, resulting in pressure equalization throughout the entire gas path 52. Therefore, gas 10 can be supplied to each gas branch path 53 approximately equally. Furthermore, the flow rate of the gas 10 introduced into the target holder 32 is adjusted to be constant. Therefore, by making the diameter of the gas branch path 53 smaller than that of the gas path 52, and the diameter of the gas outlet 54 smaller than that of the gas branch path 53, the flow rate of the gas 10 emitted from the gas outlet 54 can be increased. Therefore, the gas 10 can be dispersed in a manner that reduces the density of different areas on the entire surface of the target 30.

[0101] (Electrode components and insulating components of the target holder)

[0102] like Figure 2 and Figure 3 As shown, the electrode components of the target holder 32 include an electrode 71 and an anode 72. Additionally, as... Figure 8 As shown, the insulating components of the target holder 32 include an insulating bushing 421, a first insulating plate 422, and a second insulating plate 423.

[0103] Electrode 71 is the electrode that inputs the target bias voltage Vt to the target holder 32. One electrode 71 is provided for each target holder 32. For example... Figure 2 As shown, electrode 71 and gas inlet 51 are disposed adjacent to each end of target holder 32. Through electrode 71, target body 321, back plate 322 and target 30 are charged with target bias voltage Vt.

[0104] The insulating bushing 421 is a bushing that insulates the bolts that fix the target body 321 on the upper surface portion 3. In this embodiment, multiple insulating bushings 421 are provided along the length direction (Y-axis direction) of the target holder 32, at positions facing each other across the magnetic field strength adjustment plate 61 (see reference). Figure 2 ).

[0105] The first insulating plate 422 is an insulating member disposed on a plane parallel to the plane on which the target 30 is disposed, between the upper surface portion 3 and the target body 321. Specifically, the first insulating plate 422 is disposed between the gas path cover 521 and the first magnetic plate 63.

[0106] The second insulating plate 423 is an insulating member disposed between the upper surface portion 3 and the target body 321 on a plane perpendicular to the plane on which the target 30 is disposed. The second insulating plate 423 is disposed in a manner that surrounds the four corners of the target body 321.

[0107] The insulating bushing 421, the first insulating plate 422, and the second insulating plate 423, which are insulating components, have the function of insulating the target body 321 and the back plate 322, which are charged with the target bias voltage Vt, from the electrically grounded vacuum container 2 and the upper surface portion 3.

[0108] The anode 72 is an electrode used to capture electrons (secondary electrons) generated by ion collisions at the target 30 near the target 30, together with the parallel magnetic field formed between the ends of the third magnetic plate 67 described later. This increases the density of the plasma 22 near the target 30. Furthermore, the anode 72 is electrically grounded.

[0109] Secondary electrons from target 30 are captured by the parallel magnetic field, thus reducing the likelihood of them incident on the surface of substrate 12. This reduces the potential for temperature rise in substrate 12. Furthermore, by setting the magnetic field strength of the parallel magnetic field to a low level, even if secondary electrons are not captured by the parallel magnetic field, they will not disappear due to cyclotron motion. Instead, they may disappear by incident on surrounding walls or through recombination in space. Therefore, the impact of secondary electrons on the high density of plasma 22 near the surface of substrate 12 can be reduced.

[0110] In this embodiment, such as Figure 3 and Figure 8 As shown, the anode 72 is disposed near the target placement position 30a and has an annular shape similar to the outer edge of the target placement position 30a. In this embodiment, the anode 72 is disposed to cover the gas outlet 54 and the outer edge of the target 30 disposed at the target placement position 30a. Furthermore, the anode 72 is disposed in the target holder 32 with a gap between it and the outer edge of the target 30. Therefore, the gas 10 emitted at the gas outlet 54 can diffuse through the gap towards the target 30. Additionally, the third magnetic plate 67, described later, is not in contact with the plasma 22 due to the anode 72. Therefore, the risk of impurities being generated inside the vacuum container 2 due to contact between the third magnetic plate 67 and the plasma 22 can be reduced.

[0111] (Regarding magnetic circuits)

[0112] Here, before describing the magnetic circuit components of the target holder 32, the magnetic circuit will be explained. The magnetic circuit is a circuit that generates a magnetic field, consisting of a magnet and magnetic components magnetized by the magnet.

[0113] A magnet is a substance that generates a magnetic field through magnetomotive force, causing magnetic flux to flow to the outside of the magnet. A magnetic component is a structure that allows the magnetic flux generated by a magnet to pass through. Examples of magnetic components include magnetic yokes (iron yokes) and strongly magnetic materials with high magnetic permeability such as iron.

[0114] A gap, acting as a natural space, can also be formed in a magnetic circuit. This gap can be formed between two magnetic components forming the magnetic circuit. A material with a lower permeability than the magnetic components (e.g., air) is inserted into the gap. Therefore, the magnetic reluctance in the gap is greater than that in the magnetic components. Thus, by adjusting the width of the gap (the distance between the two magnetic components) in the magnetic circuit, the overall magnetic reluctance of the magnetic circuit can be changed.

[0115] (Magnetic circuit components of the target holder)

[0116] like Figure 8 As shown, the magnetic circuit components of the target holder 32 are components that form the magnetic circuit described above, including a magnet 65 and magnetic components. These magnetic components include: a magnetic field strength adjustment plate (magnetic adjustment component) 61, a magnetic path bolt (fixing component) 62, a first magnetic plate 63, a magnet holding part 64, a second magnetic plate 66, and a third magnetic plate 67.

[0117] The magnetic field strength adjustment plate 61 is a magnetic component disposed on the upper surface portion 3 (i.e., the upper surface portion 320 of the target holder 32) exposed to the atmosphere outside the vacuum container 2. The magnetic field strength adjustment plate 61 is a pair of magnetic components extending along the length direction of the target holder 32 (see reference). Figure 2 Furthermore, a gap 61a is formed between a pair of magnetic field strength adjustment plates 61. That is, the gap 61a is defined by the magnetic field strength adjustment plates 61. In addition, multiple elongated holes 61b are formed in the magnetic field strength adjustment plates 61, which are through magnetic path bolts 62 and extend along the width direction (X-axis direction) of the gap 61a (see reference). Figure 2 and Figure 9 ). Figure 9 yes Figure 2 An enlarged view of section H in the image.

[0118] The magnetic path bolt 62 is a magnetic component that fixes each magnetic field strength adjustment plate 61 to the target holder 32. Specifically, the magnetic path bolt 62 passes through the elongated hole 61b of the magnetic field strength adjustment plate 61 and is fixed to the first magnetic plate 63, thereby fixing the magnetic field strength adjustment plate 61 to the target holder 32.

[0119] The length of the elongated hole 61b in the width direction (X-axis direction) is larger than the shaft diameter of the magnetic path bolt 62. Therefore, the penetration position of the magnetic path bolt 62 in the longer hole 61b can be varied. That is, the fixed position of the magnetic field strength adjustment plate 61 relative to the target holder 32 can be changed by an amount corresponding to the length in the width direction of the elongated hole 61b. Therefore, by adjusting the fixed position of the magnetic field strength adjustment plate 61, the width of the gap 61a can be adjusted. In this way, the magnetic field strength adjustment plate 61 and the magnetic path bolt 62 function as an adjustment mechanism for adjusting the width of the gap 61a.

[0120] Furthermore, in this embodiment, both magnetic field strength adjustment plates 61 have elongated holes 61b, but this is not a limitation. For example, the elongated hole 61b may be formed only in one of the magnetic field strength adjustment plates 61, while the other magnetic field strength adjustment plate 61 is fixed to the upper surface portion 3. Even in this case, the position of one magnetic field strength adjustment plate 61 relative to the other magnetic field strength adjustment plate 61 can be changed, thereby adjusting the width of the gap 61a.

[0121] The first magnetic plate 63 is a pair of magnetic components extending along the length of the target holder 32 (see reference). Figure 4 The first magnetic plate 63 is fixed between the first insulating plate 422 and the upper surface portion 3 in a manner corresponding to the two magnetic field strength adjustment plates 61.

[0122] The magnet holding portion 64 is a pair of magnetic components that hold the magnet 65. The magnet holding portion 64 extends along the length direction of the target holder 32, and multiple magnets 65 can be held in each magnet holding portion 64 (see reference). Figure 4 The magnet holding portions 64 are respectively disposed at positions facing and close to the first magnetic plate 63. Furthermore, the magnet holding portions 64 can also contact the first magnetic plate 63. That is, a portion for holding the magnet 65 can also be provided on a part of the first magnetic plate 63.

[0123] Magnet 65 is a component having a magnetic strength (magnetomotive force) capable of magnetizing a magnetic component. For example, a semi-permanent magnet can be used as magnet 65, in which case the desired magnetic circuit can be constructed inexpensively and easily. Magnet 65 uses magnets with different poles in one magnet holding portion 64 and the other magnet holding portion 64. For example, one magnet holding portion 64 holds a magnet 65 with the N pole, and the other magnet holding portion 64 holds a magnet 65 with the S pole.

[0124] The second magnetic plate 66 is a pair of magnetic components respectively disposed in contact with the magnet holding part 64, and extends along the length direction of the target holder 32 (see reference). Figure 5 The second magnetic plate 66 is fixed between the second insulating plate 423 and the upper surface portion 3. Furthermore, as long as a magnetic circuit can be formed, the second magnetic plate 66 can also be positioned separately from the magnet holding portion 64.

[0125] The third magnetic plate 67 is a pair of magnetic components respectively disposed in contact with the second magnetic plate 66, and extends along the length of the target holder 32. The third magnetic plate 67 is fixed between the anode 72 and the second magnetic plate 66 by a fixing member (e.g., bolt) that fixes the anode 72 to the second magnetic plate 66 (see reference). Figure 8 Furthermore, when viewed from a vertical direction, the third magnetic plate 67 is positioned opposite the target 30, which is positioned at target configuration position 30a. That is, the third magnetic plate 67 is configured to cover the gas outlet 54 together with the anode 72.

[0126] As described above, a magnetic circuit is formed by the magnetic field strength adjustment plate 61, the magnetic path bolt 62, the first magnetic plate 63, the magnet holding part 64, the magnet 65, the second magnetic plate 66, and the third magnetic plate 67. That is, the magnetomotive force of the magnet 65 appears at the ends of each of the third magnetic plates 67, forming a parallel magnetic field between the ends of the third magnetic plates 67.

[0127] (Cooling components for the target holder)

[0128] like Figure 2 , Figure 3 and Figure 7 As shown, the cooling component of the target holder 32 is a component for water cooling the target 30, and includes a cooling water inlet 81 and a cooling water path 82.

[0129] Cooling water inlet 81 cools the target holder 32 by supplying / discharging cooling water to it. For example... Figure 2 As shown, each target holder 32 is provided with a cooling water inlet 81. The cooling water inlet 81 is located on the end of each target holder 32 opposite to the end where the gas inlet 51 is located. A refrigerant other than water can be used as the cooling water.

[0130] Cooling water path 82 is a U-shaped groove provided on the lower surface of the target body 321 along the long side of the target body 321 (see reference). Figure 3 and Figure 7 The cooling component causes the cooling water supplied from the water inlet of the cooling water outlet 81 to flow in a U-shape and drain from the water outlet of the cooling water outlet 81, thereby cooling the target holder 32.

[0131] <Methods for homogenizing film thickness distribution>

[0132] In order to make the film thickness distribution of the thin film formed on the substrate 12 uniform,

[0133] Homogenization of gas 10 distribution (pressure distribution) on the surface of target 30

[0134] Homogenization of gas distribution between targets 30

[0135] • The region where the parallel magnetic field is formed on the surface of target 30

[0136] This becomes one of the important elements. A detailed explanation of the related descriptions and methods is provided.

[0137] (Gas distribution on the target surface)

[0138] In this embodiment, sputtering apparatus 1 releases gas 10 into vacuum container 2 from multiple gas outlets 54 located along the length of target holder 32, separated from target placement position 30a, thereby performing sputtering. As described above, anode 72 is configured to have a gap with target 30 and cover the outer edge of target 30. That is, anode 72 is positioned below target 30 and protrudes towards target 30. Therefore, gas 10 released from gas outlets 54 is released towards the protruding direction of anode 72, i.e., towards the central region of target 30, onto the surface of target 30. Thus, sputtering apparatus 1 can distribute gas 10 throughout the entire surface of target 30.

[0139] Furthermore, by adjusting the flow rate of gas 10 through flow regulator 8, gas 10 can be distributed across the entire surface of target 30 at a substantially uniform concentration. Therefore, sputtered particles can be emitted from target 30 substantially uniformly, resulting in a substantially uniform film thickness on substrate 12. In other words, the film thickness distribution on substrate 12 can be made uniform.

[0140] (Gas distribution between targets)

[0141] In this embodiment, multiple target holders 32 are provided for sputtering a large substrate. Each target holder 32 has multiple gas outlets 54 as described above. Therefore, gas 10 emitted from the gas outlets 54 is supplied to each target holder 32 covering the entire surface of the target 30. Furthermore, the piping (wiring) such as each gas inlet 51 is designed such that the total flow rate supplied to each gas inlet 51 is regulated by a flow regulator 8, and the gas 10 flows approximately evenly in each gas inlet 51. Therefore, the amount of gas 10 emitted from the gas outlets 54 can be uniformly distributed in each target holder 32. Therefore, since the distribution of gas 10 in each target holder 32 can be uniform, the film thickness distribution of the substrate 12 facing each target holder 32 can be uniformly distributed. Furthermore, a flow regulator 8 can also be provided separately in each target holder 32. In this case, the flow rate of gas 10 flowing in each gas inlet 51 can also be uniformly distributed.

[0142] Furthermore, in this embodiment, the sputtering apparatus 1 releases gas 10 to the target 30 from a position close to the target 30 on both long sides of the target 30. Therefore, compared to a structure that introduces reactive gas from both sides of a set of targets 30 and exhausts reactive gas from between a set of targets 30 (e.g., the sputtering apparatus of Patent Document 1), the distance between the targets 30 can be shortened. That is, the spacing between the target holders 32 can be reduced. Therefore, the area of ​​the substrate 12 that is not facing the target 30 can be reduced, thereby further homogenizing the film thickness distribution of the substrate 12.

[0143] Furthermore, in this embodiment, a vacuum exhaust device 4 is provided in the vacuum container 2. The vacuum exhaust device 4 is located at a different position than the substrate holder 14, which is located at the center of the bottom surface of the vacuum container 2. Therefore, the distances between each target holder 32 and the vacuum exhaust device 4 are different. As a result, the vacuum exhaust speed at each target holder 32's location is different.

[0144] With this in mind, in order to further homogenize the distribution of gas 10 to each target 30, a flow regulator 8 may be provided for each target holder 32, for example. Thus, the flow rate of gas 10 can be adjusted according to the vacuum exhaust rate at the location of each target holder 32. Therefore, regardless of the location of the vacuum exhaust device 4, the distribution of gas 10 to each target 30 can be homogenized, resulting in a homogenized film thickness distribution on the substrate 12.

[0145] Alternatively, multiple vacuum pipes connected to the vacuum exhaust device 4 can be arranged symmetrically with respect to the group of target holders 32. For example, the vacuum pipes can also be provided on two opposing sidewalls of the vacuum container 2 that extend along the length of the target holders 32. Alternatively, for example, the vacuum pipes can be provided near the bottom of the vacuum container 2, near each of the two sidewalls. In this case, the difference in vacuum exhaust velocity at the locations of each target holder 32 can be reduced, thus making the distribution of gas 10 to each target 30 more uniform. Furthermore, the same effect can be obtained through the structure of Embodiment 2 described later.

[0146] (The effect of the magnetic circuit)

[0147] like Figure 8 As shown, a pair of third magnetic plates 67 are disposed near the target 30, and magnetic poles are formed on each of the pair of third magnetic plates 67. Therefore, at least at a position facing the entire surface of the target 30, a magnetic field distribution (parallel magnetic field) with magnetic field lines that are substantially parallel to the surface can be formed. Therefore, electrons (secondary electrons) generated by ion collisions at the target 30 can be captured efficiently.

[0148] Furthermore, by forming a parallel magnetic field facing the entire surface of the target 30, electrons can be captured consistently across the entire surface of the target 30. By arranging multiple antennas 20 as described above, plasma 22 can be generated facing the entire surface of the target 30. However, even in this case, the density of plasma 22 may be locally present on the surface of the target 30. By capturing electrons through the formation of the parallel magnetic field, the localization of plasma 22 density can be suppressed. Therefore, sputtering can be performed consistently on the entire surface of the target 30. Thus, the film thickness distribution of the substrate 12 can be made uniform.

[0149] Electrons are emitted from the target 30 over a wide area. Therefore, the farther the magnetic poles formed on the third magnetic plate 67 are from the surface of the target 30, the lower the probability (capture rate, yield) of capturing the electrons, and the larger the structure of the sputtering apparatus 1 becomes. By placing the third magnetic plate 67 near the target 30, the electron yield can be improved while miniaturizing the sputtering apparatus 1 with the third magnetic plate 67 in place.

[0150] Furthermore, the magnetic field strength (magnetic flux density) formed by the magnetic circuit is less than the strength required to generate a magnetron discharge. In the sputtering apparatus 1, since plasma 22 is generated using antenna 20, it is not necessary to generate a high-intensity magnetic field as required for a magnetron discharge.

[0151] (Adjustment of the magnetic field by the magnetic circuit)

[0152] Furthermore, the strength of the parallel magnetic field is adjusted by the magnetic strength of the magnet 65 and the width of the gap 61a formed between the pair of magnetic field strength adjustment plates 61. As described above, an elongated hole 61b extending along the width direction of the magnetic field strength adjustment plate 61 is formed in the magnetic field strength adjustment plate 61. Therefore, within the range of the elongated hole 61b, the width of the gap 61a can be adjusted by changing the position of the magnetic path bolt 62 that fixes the magnetic field strength adjustment plate 61. Therefore, the magnetic resistance in the gap 61a can be adjusted, and thus the magnetic resistance of the magnetic circuit can be adjusted. Therefore, since the strength of the parallel magnetic field can be adjusted, electrons can be captured consistently throughout the entire surface of the target 30. In addition, the width of the gap 61a only needs to be adjusted to a width sufficient to form a parallel magnetic field with a strength sufficient to capture electrons consistently throughout the entire surface of the target 30.

[0153] Furthermore, in this embodiment, the width of the gap 61a can be adjusted for each target holder 32. Therefore, in each target holder 32, electrons can be captured consistently across the entire surface of the target 30.

[0154] Furthermore, a material with a different magnetic permeability than the magnetic component (air in this embodiment) is inserted into the gap 61a. Therefore, by forming the gap 61a in the magnetic circuit, a magnetic circuit with a different magnetic resistance than a magnetic circuit formed solely by a magnet and a magnetic component can be formed.

[0155] Furthermore, since the permeability of air is lower than that of magnetic components, the void 61a exhibits high magnetic reluctance. Therefore, the wider the void 61a, the weaker the parallel magnetic field strength and the worse its intensity distribution. With a poor parallel magnetic field intensity distribution, a parallel magnetic field cannot be formed across the entire surface of the target 30, potentially leading to unevenness in electron capture. Therefore, considering the permeability of the material filling the void 61a (here, air), the width of the void 61a is set to a width sufficient to form a parallel magnetic field at a position facing the entire surface of the target 30.

[0156] (Miniaturization of sputtering equipment)

[0157] In this embodiment, a magnetic circuit and a gas outlet 54 are provided inside the target holder 32. Furthermore, along with the gas outlet 54, a gas path 52 and a gas branch path 53 are also provided inside the target holder 32. Therefore, it is unnecessary to construct gas 10 paths between the target holders 32, allowing multiple target holders 32 to be mounted adjacent to each other on the upper surface portion 3. This enables miniaturization of the sputtering apparatus 1. Additionally, miniaturization of the sputtering apparatus 1 reduces the area of ​​the substrate 12 that is not facing the target 30. Therefore, the film thickness distribution on the substrate 12 can be further homogenized.

[0158] (summary)

[0159] As described above, the gas vent 54's arrangement position allows for a more uniform distribution of gas 10 on the surface of the target 30. That is, the arrangement position ensures a consistent supply of gas 10 across the entire surface of the target 30. This, in turn, allows for a more uniform film thickness distribution on the substrate 12. Furthermore, by adjusting the width of the aforementioned gap 61a, the strength of the parallel magnetic field can be adjusted to ensure consistent electron capture across the entire surface of the target 30. This adjustment also allows for a more uniform film thickness distribution on the substrate 12.

[0160] In addition, in order to adjust the film thickness distribution of the substrate 12, the flow rate of the gas 10 and the position of the magnetic field strength adjustment plate 61 (adjustment of the gap 61a) can be adjusted outside the vacuum container 2 using the flow regulator 8. Therefore, the film thickness distribution of the substrate 12 can be easily adjusted without opening the vacuum container 2.

[0161] [Implementation Method 2]

[0162] The following uses Figure 10 and Figure 11 Other embodiments will be described in detail. Furthermore, for ease of explanation, components that have the same function as those described in the embodiments will be labeled with the same symbols, and their descriptions will not be repeated.

[0163] In Embodiment 1, the gas 10 is centrally vented by a vacuum venting device 4, but in Embodiment 2, the sputtering apparatus 1 also includes multiple vent ports (venting sections) 55. Figure 10 This is a cross-sectional view showing the detailed structure inside the vacuum container 2 of Embodiment 2. Figure 11 It is the target holder 32 of embodiment 2. Figure 10 The image shows the HH arrow view, specifically the bottom view with the target holder 32 assembled.

[0164] like Figure 10 As shown, the exhaust port 55 is connected to a vacuum exhaust device for venting the vacuum container 2, and is used to exhaust the gas 10 released from the gas outlet 54. The exhaust port 55 is located on the upper surface portion 3 adjacent to the target holder 32. In this embodiment, it is located between multiple target holders 32. Figure 11 As shown, multiple exhaust ports 55 are provided along the length direction of the target holder 32.

[0165] By including an exhaust port 55 near the target holder 32 as described above, an airflow is generated in which gas 10 emitted from the gas outlet 54 flows toward the exhaust port 55. This airflow generates a more uniform distribution of gas 10 across the entire surface of the target 30. Furthermore, since the exhaust port 55 is positioned between the multiple target holders 32, the airflow generated in each target holder 32 is easily made uniform. Therefore, it is easy to uniformize the distribution of gas 10 at each target 30, resulting in a uniform film thickness distribution on the substrate 12.

[0166] Furthermore, the exhaust port 55 may also be provided along the short side direction of the target holder 32 at a position adjacent to the target holder 32. That is, the exhaust port 55 only needs to be provided around at least a portion of the target holder 32. When the exhaust port 55 is provided along the length direction of the target holder 32, the distribution of gas 10 on the entire surface of the target 30 can be more uniform. Alternatively, the exhaust port 55 may also be an opening provided along either the long or short side direction of the target holder 32.

[0167] Alternatively, the target holder 32 can be a single structure installed inside the vacuum container 2. Even in this case, by providing an exhaust port 55 adjacent to the target holder 32 as described above, the distribution of gas 10 on the entire surface of the target 30 can be made more uniform. That is, by providing an exhaust port 55 near a target holder 32, the distribution of gas 10 on the entire surface of the target 30 can be made more uniform.

[0168] Alternatively, in this embodiment, the vacuum exhaust device 4 may not be directly provided in the vacuum container 2. Alternatively, the structure may be such that the vacuum exhaust device 4 is stopped during sputtering, and exhaust is performed solely through the exhaust port 55. In these structures, the gas 10 is exhausted solely through the exhaust port 55 without using the vacuum exhaust device 4. Therefore, the unevenness of the exhaust velocity of the gas 10 in each target holder 32 can be reduced, thus making the distribution of the gas 10 at each target 30 more uniform. Furthermore, by providing flow regulators 8 corresponding to each target holder 32, even without precisely adjusting the flow rate of the gas 10 through each flow regulator 8, the distribution of the gas 10 at each target 30 can be made more uniform.

[0169] [Implementation Method 3]

[0170] The following will use Figure 12 Other embodiments will be described in detail. Furthermore, for ease of explanation, components that have the same function as those described in the embodiments will be labeled with the same symbols, and their descriptions will not be repeated.

[0171] Figure 12 These are schematic diagrams of the magnetic field strength adjustment plate 61 of Embodiment 1 and the magnetic field strength adjustment plate 610 of Embodiment 3. Figure 12 The symbol 1201 represents the magnetic field strength adjustment plate 61, and the symbol 1202 represents the magnetic field strength adjustment plate 610. In Embodiment 1, each of the pair of magnetic field strength adjustment plates 61 is composed of a single plate. Therefore, the gap 61a formed between the magnetic field strength adjustment plates 61 has the same width (length L) relative to the length direction of the magnetic field strength adjustment plates 61. On the other hand, in Embodiment 3, each of the pair of magnetic field strength adjustment plates 610 (magnetic adjustment members) is divided into multiple sections along the long side direction of the magnetic field strength adjustment plate 610.

[0172] Specifically, a pair of magnetic field strength adjustment plates 610 is a group of magnetic field plates composed of multiple pairs of magnetic field plates. For example... Figure 12As shown, in this embodiment, a pair of magnetic field strength adjustment plates 610 have three pairs of magnetic field plates 611, 612, and 613 along their length. The width of the gap 61c formed by the first pair of magnetic field plates 611 is L1. The width of the gap 61d formed by the second pair of magnetic field plates 612 is L2. The width of the gap 61e formed by the third pair of magnetic field plates 613 is L3. The magnetic field plates 611, 612, and 613 are arranged in the aforementioned order and disposed on the upper surface portion 320 of the target holder 32.

[0173] Similar to the magnetic field strength adjustment plate 611, magnetic field plate 612, and magnetic field plate 613, elongated holes extending along the width direction of the magnetic field strength adjustment plate 610 are formed in magnetic field plates 611, 612, and 613. Figure 12 (Not illustrated). Therefore, the lengths L1, L2, and L3 of the widths of gaps 61c, 61d, and 61e can be defined. That is, by adjusting lengths L1, L2, and L3 respectively, the strength of the parallel magnetic field can be adjusted according to the position of the target 30 along its length. Since the unevenness of the parallel magnetic field strength along the length of the target 30 can be easily reduced, a significant effect can be expected, especially when the target 30 is elongated.

[0174] Here, generally along the length of the target 30, the strength of the parallel magnetic field tends to weaken closer to the end region of the target 30. Therefore, for example, as... Figure 12 As shown, the widths of the gaps 61c and 61e corresponding to the two end regions of the target 30 are narrower than the width of the gap 61d corresponding to the central region of the target 30 (L1≒L3<L2). Thus, the magnetic field strength in the gaps 61c and 61e is stronger than the magnetic field strength in the gap 61d.

[0175] However, by adjusting gaps 61c, 61d, and 61e, the strength of the parallel magnetic field can be made uniform across the entire surface of the target 30. For example, the lengths L1, L2, and L3 can be set to different lengths depending on the configuration of the target 30.

[0176] Furthermore, the magnetic field strength adjustment plate 610 does not necessarily need to be divided into the three sections of magnetic field plate 611, magnetic field plate 612, and magnetic field plate 613; it can be divided into any number of sections. Additionally, by bending the pair of magnetic field strength adjustment plates 61, the length of the gap 61a can vary at different positions along the length of the magnetic field strength adjustment plate 61. For example, the shape of the magnetic field strength adjustment plate 61 can be specified such that the gap 61a is largest at the center of the magnetic field strength adjustment plate 61 along its length.

[0177] Furthermore, in this embodiment, the magnetic field strength adjustment plate 610 is divided into multiple partitions, but it is not limited to this. For example, only one of the magnetic field strength adjustment plates 610 may be divided into multiple partitions. Even in this case, the width of each position in the length direction of the magnetic field strength adjustment plate 610 can be adjusted individually.

[0178] [Variation Example 1]

[0179] In Embodiment 1, air is inserted into the gap 61a as a material having a magnetic permeability different from that of the magnetic component. In this modified example, a material having a magnetic permeability different from that of air may also be inserted into the gap 61a. This allows adjustment of the magnetic reluctance of the magnetic circuit, and consequently, adjustment of the strength of the parallel magnetic field. For example, when the magnetic permeability is less than that of air (1.26 × 10⁻⁶), air is inserted into the gap 61a. -6 Carbon steel (permeability: 1.26 × 10⁻⁶ μH / m) is approximately 100 times stronger than carbon steel. -4 When a (μH / m) material is inserted into gap 61a, the magnetic reluctance of the magnetic circuit is 1 / 100. Therefore, the strength of the parallel magnetic field can be increased. In addition, non-magnetic metals (e.g., aluminum) or engineering plastics (e.g., polyetheretherketone, PEEK) with lower permeability than magnetic components can also be inserted into gap 61a.

[0180] Alternatively, the magnetic field strength adjustment plate 61 may not be composed of a pair of magnetic components, but rather of a single plate without gaps (e.g., a plate containing PEEK). In this case, the magnetic reluctance of the magnetic circuit can be changed by replacing the magnetic field strength adjustment plate 61 with another magnetic field strength adjustment plate 61 having a different permeability than the magnetic field strength adjustment plate 61.

[0181] [Variation Example 2]

[0182] In embodiment 1, a pair of magnets 65 are provided inside the upper surface portion 3, but the position of the magnets 65 is not limited to the stated position. For example, a magnet with N poles and S poles can be disposed on the surface of the upper surface portion 3 instead of the magnetic field strength adjustment plate 61. Alternatively, a magnet with N poles and a magnet with S poles can be disposed on the surface of the upper surface portion 3. In this case, the strength of the parallel magnetic field can be adjusted by replacing the magnets.

[0183] [Variation Example 3]

[0184] In the embodiments described above, the plasma 22 generated by the antenna 20 is ionized, but this is not a limitation. For example, the antenna 20 may be absent, and a parallel magnetic field with an intensity greater than that of a magnetron discharge may be formed by a magnetic circuit.

[0185] 〔Summarize〕

[0186] According to one aspect of the present invention, a sputtering apparatus is used to sputter a target in a vacuum container to form a film on a substrate. In the sputtering apparatus, the vacuum container includes at least one holding portion for holding the target. The holding portion includes: a gas inlet portion for introducing gas into the holding portion; and a pair of openings that, when viewed from a vertical direction at a target configuration position in the holding portion, extend around at least a portion of the target configuration position and are positioned opposite each other across the target configuration position, for releasing the gas introduced into the holding portion into the vacuum container.

[0187] According to the structure described above, gas can be supplied from around the target and distributed across the entire surface of the target at a substantially uniform pressure. Therefore, uneven gas distribution across the entire surface of the target can be reduced. Consequently, the possibility of film thickness deviations in films deposited on the substrate can be reduced.

[0188] In one aspect of the sputtering apparatus of the present invention, the target placement position when viewed from the vertical direction may be rectangular, and the opening may be provided as a whole covering the opposing sides of the target placement position.

[0189] According to the structure described, gas can be supplied more uniformly across the entire surface of the target.

[0190] In one aspect of the sputtering apparatus of the present invention, the opening may also be provided throughout the entire opposing long side of the target placement position.

[0191] According to the structure described, gas can be supplied more uniformly across the entire surface of the target.

[0192] In one aspect of the sputtering apparatus of the present invention, the holding part may include a magnet and a magnetic component magnetized by the magnet, the magnet and the magnetic component forming a magnetic circuit, the magnetic circuit forming a magnetic field at the target placement position, a gap forming in a portion of the magnetic circuit, and a portion of the magnetic circuit with the gap being disposed outside the vacuum container.

[0193] According to the structure, the magnetic resistance of the magnetic circuit can be adjusted without opening the vacuum container by means of a gap provided outside the vacuum container.

[0194] In one aspect of the sputtering apparatus of the present invention, the holding part may also include an adjustment mechanism for adjusting the width of the gap.

[0195] According to the structure described, the magnetic reluctance of the magnetic circuit can be adjusted by adjusting the width of the gap.

[0196] In one aspect of the sputtering apparatus of the present invention, the adjustment mechanism may include a pair of magnetic adjustment members, which are disposed on the upper surface of the holding portion as part of the magnetic member and define the gap. At least one of the pair of magnetic adjustment members has an elongated hole through which the magnetic adjustment member is fixed to the holding portion as part of the magnetic member and extends along the width direction of the gap. The through position of the fixed member in the elongated hole can be changed.

[0197] According to the structure, the width of the gap can be changed by altering the position of the elongated hole in the magnetic adjustment component.

[0198] In one aspect of the sputtering apparatus of the present invention, the target configuration position when viewed from the vertical direction may be rectangular, the pair of magnetic adjustment members may be provided extending along the length direction of the target configuration position, at least one of the pair of magnetic adjustment members may be divided into multiple partitions along the length direction, and the width of the gap may be defined by defining the through position of the fixing member in the elongated hole for each of the multiple partitions.

[0199] Based on the structure described, different gap widths can be specified for each partition. Therefore, the magnetic reluctance of the magnetic circuit can be adjusted along the length of the target placement location.

[0200] In one aspect of the sputtering apparatus of the present invention, a material having a different magnetic permeability than the magnetic component may also be inserted into the gap.

[0201] According to the structure, the magnetic reluctance of the magnetic circuit can be adjusted by inserting a material with a different permeability than the magnetic component into the gap.

[0202] In one aspect of the sputtering apparatus of the present invention, a plurality of the aforementioned holding portions may also be included.

[0203] According to the structure described, larger substrates can be sputtered using multiple targets.

[0204] In one aspect of the sputtering apparatus of the present invention, the vacuum container may include a plurality of exhaust sections for venting the interior of the vacuum container, and the exhaust sections are disposed adjacent to the holding section.

[0205] According to the structure described, the gas distribution on the entire surface of the target can be made more uniform.

[0206] In one aspect of the sputtering apparatus of the present invention, the holding part may include a gas path that connects the gas inlet to the opening. The gas path includes a main path that receives gas introduced from the gas inlet and a plurality of branch paths that connect to the main path and introduce gas in the main path to the opening. The thickness of each of the plurality of branch paths is smaller than that of the main path.

[0207] According to the structure, the flow rate of gas released from the opening via the branch path can be increased, thus enabling the gas to be dispersed in a manner that reduces the density of the gas on the entire surface of the target.

[0208] [Additional Notes]

[0209] This invention is not limited to the embodiments described above, and various modifications can be made within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included within the technical scope of this invention.

Claims

1. A sputtering apparatus for sputtering a target within a vacuum chamber to form a film on a substrate, wherein in the sputtering apparatus, The vacuum container includes at least one holding part for holding the target. The retaining part includes: A gas inlet section introduces gas into the holding section; as well as A pair of openings, when viewed from a vertical direction at the target configuration position in the holding part, at least a portion of which are located around the target configuration position and facing each other across the target configuration position, release the gas introduced into the holding part into the vacuum container.

2. The sputtering apparatus according to claim 1, wherein, The target configuration, when viewed from the vertical direction, is rectangular in shape. The opening is provided as a whole along the opposing sides of the target configuration location.

3. The sputtering apparatus according to claim 1 or 2, wherein, The opening is provided as a whole along the opposing long sides of the target configuration location.

4. The sputtering apparatus according to claim 1, wherein, The retaining part includes a magnet and a magnetic component magnetized by the magnet. The magnet and the magnetic component form a magnetic circuit, and the magnetic circuit generates a magnetic field at the target placement position. A gap is formed in a part of the magnetic circuit. A portion of the magnetic circuit with the aforementioned void is disposed outside the vacuum container.

5. The sputtering apparatus according to claim 4, wherein, The retaining part includes an adjustment mechanism for adjusting the width of the gap.

6. The sputtering apparatus according to claim 5, wherein, The adjustment mechanism includes a pair of magnetic adjustment members, which are disposed as part of the magnetic components on the upper surface of the holding portion and define the gap. At least one of the pair of magnetic adjustment members has an elongated hole that passes through a fixing member that serves as part of the magnetic member and secures the magnetic adjustment member to the holding portion, and extends along the width direction of the gap. The position of the fixing member in the elongated hole can be changed.

7. The sputtering apparatus according to claim 6, wherein, The target configuration, when viewed from the vertical direction, is rectangular in shape. The pair of magnetic adjustment members are arranged to extend along the length direction of the target configuration position. At least one of the pair of magnetic adjustment members is divided into multiple sections along the length direction. The width of the gap is defined by specifying the through position of the fixing member in the elongated hole for each of the plurality of partitions.

8. The sputtering apparatus according to any one of claims 4 to 7, wherein, A substance with a different permeability than the magnetic component is inserted into the gap.

9. The sputtering apparatus according to claim 1, comprising a plurality of the holding portions.

10. The sputtering apparatus according to claim 1, wherein, The vacuum container includes at least one exhaust section for venting the interior of the vacuum container. The exhaust section and the retaining section are disposed adjacent to each other.

11. The sputtering apparatus according to claim 1, wherein, The retaining part includes a gas path that connects the gas inlet part and the opening part. The gas path includes: The main path receives gas introduced from the gas inlet; and Multiple branch paths are connected to the main path to guide the gas in the main path to the opening. The thickness of each of the multiple branch paths is smaller than that of the main path.

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