A layered nanometer metal glass thin film with high hardness and high deformation capacity and a preparation method thereof

Abstract

The application provides a layered nanometer metal glass film with high hardness and high deformation capacity and a preparation method thereof. The method is used for preparing a metal glass film with a high-density nanometer amorphous / amorphous layered interface by co-sputtering. The unique microstructure of the film is that the component layer is an amorphous CuTa alloy with the same element but different content, and the thickness of the amorphous component layer is controlled to be in a very small scale. The application fully utilizes the excellent amorphous forming capacity of the binary Cu-Ta alloy, and can form a nanometer amorphous / amorphous interface by using two metal elements, thereby greatly reducing the consumption of alloy elements, avoiding the complex preparation process of alloy target material or the customization of expensive alloy target material, and greatly reducing the preparation cost of the material. The metal glass film has excellent mechanical properties of high hardness and high deformation capacity (no shear band under micro-scale indentation), and has wide application prospects in the fields of high-strength electronic devices, wear-resistant and corrosion-resistant coatings and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of amorphous alloy thin film technology, and particularly relates to a layered nanoscale metallic glass thin film with high hardness and high deformation capacity and a preparation method thereof. BACKGROUND

[0002] Since Klement et al. first reported amorphous alloys (commonly known as metallic glasses) in 1960, the chemical, physical and mechanical properties of metallic glasses have been a research hotspot in the scientific community. Unlike the periodic atomic arrangement of crystal structure, the atomic structure of metallic glasses has the characteristics of long-range disorder and short-range order. Its special microstructure endows metallic glasses with ultra-high room temperature strength / hardness, high yield strain, good wear and corrosion resistance, excellent radiation damage and fatigue resistance, making metallic glasses have wide application prospects in micro-electro-mechanical systems (MEMS). A typical commercial case is that Al3Ti-based metallic glass deposited by sputtering is used as the hinge of the micro-mirror rotation in digital light processing (DLP), and the hinge does not fail after 1012 cycles of testing. However, due to the lack of lattice defects such as dislocations and twins in the crystal structure that bear large plastic deformation, metallic glasses can only form shear bands by the aggregation and movement of atomic clusters along a certain shear path, resulting in the rapid destruction of the whole material. Therefore, metallic glasses often exhibit brittleness at room temperature, with almost zero tensile elongation, which greatly limits the engineering application of metallic glasses. Therefore, if the plastic deformation capacity of metallic glasses can be greatly enhanced while maintaining their high strength, metallic glass materials will have broad application prospects.

[0003] Currently, there are two strategies for improving the plasticity of metallic glasses. One is to introduce a ductile crystal phase into the metallic glass matrix to form a crystal-amorphous composite material. For example, a zirconium-based bulk nanocrystalline amorphous alloy with large plastic strain is disclosed in patent application No. 200510136732.4. Although this strategy can improve the plastic deformation capacity of metallic glasses, the introduction of soft phases often leads to a decrease in the strength of the composite material. The other method is to introduce nanoscale features into metallic glasses to construct new nanoscale glass structures or nanoscale multilayer glass structures, which have a high density of nanoscale amorphous / amorphous interfaces. Recent studies have shown that the deformation capacity of metallic glasses is strongly dependent on their geometric size. When the geometric size is reduced to the nanoscale, shear bands are difficult to nucleate and propagate within the layer. Therefore, metallic glasses can also undergo uniform plastic deformation, i.e., a transition from "brittle" to "ductile". Therefore, the introduction of a high density of nanoscale amorphous / amorphous interfaces can effectively improve the plasticity of metallic glasses.

[0004] The nano-glass structure is similar to the nano-grain structure, and is characterized by nano-amorphous particles wrapped by amorphous interfaces, for example, the preparation method of nano-glass powder, nano-glass powder and glass product with patent application number 202110902346.0. Although this kind of nano-structured metallic glass also has good plastic deformation ability, its preparation process is relatively complex, and the nano-structured metallic glass prepared is often not dense enough, which is difficult to meet the actual engineering application. The existing nano-multilayer glass structure is formed by alternately stacking different amorphous alloys and controlling the nano-scale spacing between amorphous interfaces, for example, the method for preparing amorphous / amorphous nano-multilayer film with improved plasticity in patent application number 201810327877.X. This patent uses magnetron sputtering to alternately deposit Ni 50 Nb 50 , Zr 61 Cu 17.5 Ni 10 Al 7.5 Si4 alloy targets to prepare Ni 50 Nb 50 / Zr 61 Cu 17.5 Ni 10 Al 7.5 Si4 nano-multilayer glass film. Compared with single-component amorphous film, the accumulation height of this nano-multilayer glass film under micro-indentation is significantly reduced, indicating that its plastic deformation ability has been improved to some extent. However, the component layer of this kind of nano-multilayer glass material is composed of different amorphous alloys, which consumes a large amount of alloy elements. At least 6 target materials are needed for sputtering preparation using single metal target material, and at least 2 target materials are needed for sputtering preparation using alloy target material, resulting in high cost and complex preparation. SUMMARY

[0005] The present application provides a layered nano-metallic glass film with high hardness and high deformation ability and a preparation method thereof, which aims to solve the problem of how to reduce the consumption of alloy elements and avoid the use of alloy target materials to prepare nano-metallic glass film materials with high strength and high deformation ability and accurate composition.

[0006] In order to achieve the above purpose, the embodiments of the present application provide a layered nano-metallic glass film with high hardness and high deformation ability and a preparation method thereof. The method uses copper and tantalum two single metal co-sputtering to prepare a multilayer metallic glass film with high density nano-scale amorphous / amorphous layered interface, and the component layer is an amorphous CuTa alloy with the same element but different content (for example, Cu 57 Ta 43 / Cu 37 Ta 63), and the thickness of the amorphous component layer is controlled to a very small scale (5 nanometers); the layered nanometer metal glass thin film prepared by the application not only realizes the combination of high hardness and high deformation capacity, and fully utilizes the excellent amorphous forming ability of the binary Cu-Ta alloy, and the nanometer amorphous / amorphous interface can be formed by using two metal elements, which greatly reduces the consumption of alloy elements and avoids the complex preparation process of alloy target or the customization of expensive alloy target, thereby greatly reducing the preparation cost of the material. The same amorphous alloy system (CuTa) is used to realize the preparation of the nanometer multilayer glass thin film material, and the unique points are: (1) the CuTa amorphous alloy formed by co-sputtering of copper (Cu) and tantalum (Ta) two single element metals is used to synthesize the nanometer multilayer metal glass; (2) the nanometer amorphous / amorphous interface is formed by alternately depositing amorphous CuTa alloys (Cu 57 Ta 43 / Cu 37 Ta 63 ) with different contents of the same element, only 2 single element targets are needed, the cost is relatively low, and the preparation is relatively simple; (3) the thickness of the amorphous component layer is controlled to a very small scale (5 nanometers), so that the entire material has a high density of nanometer amorphous / amorphous interface; (4) the CuTa / CuTa nanometer multilayer metal glass prepared by the scheme has high hardness (8.4 GPa) and excellent deformation capacity (no shear band is generated under micro-scale indentation). Based on the above characteristics, the CuTa nanometer metal glass thin film material prepared by the application has wide application prospects in the fields of high-strength electronic devices, cutting tool wear-resistant coatings and the like, and the preparation method is simple, the cost is relatively low, and is beneficial to practical application and popularization.

[0007] The embodiment of the application provides a layered nanometer metal glass thin film with high hardness and high deformation capacity, which is formed by alternately depositing CuTa alloys with different contents of the same element, and is a multilayer metal glass thin film with a high density of nanometer amorphous / amorphous interfaces.

[0008] Preferably, the thickness of each single component layer of the alternately deposited thin film is 5 nm, the total number of layers of the thin film is greater than 200, and the total thickness of the thin film is greater than 1 micrometer.

[0009] Preferably, the alloy elements and contents of each component layer of the thin film are Cu 37 Ta 63 ~ Cu 57 Ta 43 (at. %), that is, the content of Cu element in each single component layer is 37 at. % to 57 at. %, and the content of Ta element is 43 at. % to 63 at. %.

[0010] Preferably, the hardness of the layered nanometer metal glass thin film with high hardness and high deformation capacity is as high as 8.4 GPa.

[0011] Based on one general inventive concept, embodiments of the present application provide the above-mentioned method for preparing the layered nanometer metal glass thin film with high hardness and high deformation capacity, comprising the following steps:

[0012] S1: selecting elemental target materials Cu target and Ta target, fixing the selected elemental target materials Cu target and Ta target in 1# and 2# direct current sputtering target cavities of a deposition chamber, and vacuumizing the inside of the deposition chamber;

[0013] S2: mounting a substrate to a three-jaw chuck in the deposition chamber, and adjusting the distance between the substrate and the target materials;

[0014] S3: filling argon, adjusting the argon flow to control the initial gas pressure of the deposition chamber, setting the bias power to clean the substrate; adjusting the argon flow to control the pre-sputtering gas pressure of the deposition chamber, and setting the power of 1# and 2# direct current sputtering target cavities to pre-sputter;

[0015] S4: controlling the rotating speed of the substrate motor, adjusting the power of 1# and 2# target cavities, sputtering, closing the target cavity cover after the first layer of sputtering, waiting for 10-15s; adjusting the power of 1# and 2# target cavities, opening the target cavity cover again to sputter, closing the target cavity cover after the second layer of sputtering, waiting again for 10-15s; repeating the previous steps to alternately deposit until the deposition is completed, and cooling to room temperature in vacuum, thereby obtaining the layered nanometer metal glass thin film with high hardness and high deformation capacity.

[0016] Preferably, the inside of the deposition chamber is vacuumized to be lower than 1.0×10 -4 Pa in step S1.

[0017] Preferably, the purity of the Cu target and the Ta target is higher than 99.99% in step S1.

[0018] Preferably, the substrate is (100) oriented single crystal silicon with a size of 2 inch*0.4 mm, single side polished, and an electrical resistivity of less than 0.1Ω·cm in step S2.

[0019] Preferably, the distance between the substrate and the target materials is 88-138 mm in step S2.

[0020] Preferably, the initial gas pressure is 4-8 Pa, the bias power is 30-50 W, and the cleaning time is 5-10 min in step S3.

[0021] Preferably, the pre-sputtering gas pressure is 0.3 Pa, the power of 1# and 2# direct current sputtering target cavities is 30-50 W, and the pre-sputtering time is 10-15 min in step S3.

[0022] Preferably, the power of 1# and 2# target cavities is 25-87 W and 100 W respectively, and the total sputtering deposition rate is 0.1819-0.3194 nm / s in step S4.

[0023] Preferably, the rotating speed of the motor in step S4 is 10-30 r / min, and the cooling time is 1-3 h.

[0024] Preferably, the purity of the argon is higher than 99.999%.

[0025] The above scheme of the present application has the following beneficial effects:

[0026] (1) The same amorphous alloy system is adopted to realize the preparation of the nano-multilayer glass material, only 2 single-element targets are needed, compared with the method of using multiple amorphous alloy systems, the number of targets is at least reduced by half, the complex alloy target preparation process is avoided, the preparation cost of the metallic glass thin film is greatly reduced, and meanwhile, the reduction of the number of targets also reduces the preparation difficulty;

[0027] (2) The composition and content of the metallic glass are highly adjustable, different metallic glasses can be prepared by selecting different single-element metal targets, the composition can be realized by adjusting the sputtering power of the target chamber, and the operation process is simple and easy to realize;

[0028] (3) The prepared nano-multilayer glass layer has a stable and reliable layered structure, the interface is straight, the thickness of each layer is uniform, the thin film is completely amorphous structure, the thin film is tightly combined with the substrate, the internal elements are uniformly distributed and dense without pores;

[0029] (4) The prepared nano-multilayer metallic glass still exhibits good plastic deformation capacity (no shear band appears under micro-indentation experiment) while maintaining high hardness (8.4 GPa);

[0030] (5) The method is not limited to the CuTa alloy system, and can be universally applied to various binary or multi-element (including medium / high-entropy alloy) amorphous alloy systems with strong amorphous forming ability, including but not limited to CuZr, CuNb, CuHf, ZrNi, TiZrNb, TiZrHfNb, TiZrHfNbNi, etc. Different element content component layers are formed by changing the element ratio in the above amorphous system to prepare various layered nano-structured metallic glass thin film materials with high strength and high deformation capacity. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings in the following description only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0032] Figure 1 Cu is the Cu target of Example 1 of the present application 57 Ta43 / Cu 37 Ta 63 X-ray diffraction images of the layered nanoglass thin film and the single-component metallic glass thin films of Comparative Examples 1 and 2.

[0033] Figure 2 Cu of Example 1 of the present application 57 Ta 43 / Cu 37 Ta 63 Cross-sectional TEM image of the layered nanoglass thin film

[0034] Figure 3 Nanoindentation hardness of the layered nanoglass thin film of Example 1 of the present application and the nanoglass thin films of Comparative Examples 1 and 2.

[0035] Figure 4 Surface residual topography of the three microindentation experiments of Example 1 of the present application and Comparative Examples 1 and 2, the microindentation experiment load being 100 mN and the load holding time being 5 seconds. DETAILED DESCRIPTION

[0036] In order to make the technical problems, technical solutions and advantages of the present application more clear, the following will be described in detail with reference to the accompanying drawings and specific examples.

[0037] Unless otherwise defined, all the professional terms used in the following have the same meaning as commonly understood by those skilled in the art. The professional terms used in the present application are only for the purpose of describing the specific examples and are not intended to limit the protection scope of the present application.

[0038] Unless otherwise specified, the various raw materials, reagents, instruments and equipment, etc. used in the present application can be purchased from the market or can be prepared by the existing methods.

[0039] The present application provides a layered nanometallic glass thin film with high hardness and high deformation capacity and a preparation method thereof in view of the existing problems.

[0040] Example 1

[0041] Cu 57 Ta 43 / … / Cu 37 Ta 63 The preparation process of the layered nanometallic glass thin film is as follows:

[0042] (1) The Cu target (purity 99.99%) and the Ta target (purity 99.99%) are respectively installed on No. 1 and No. 2 direct current sputtering target cavities in the deposition chamber, and then a single crystal silicon (100) substrate is installed on the bottom plate in the deposition chamber, the cabin door of the deposition chamber is closed and the vacuum is pumped to 9 x 10 -5 Pa.

[0043] (2) Introduce high purity argon gas with purity of 99.999% and adjust the argon gas flow to 190 sccm to make the pressure in the deposition chamber reach 6.4 Pa. Turn on the bias power supply to make the power be 50 W and perform silicon wafer cleaning for 5 minutes. After the silicon wafer cleaning is completed, adjust the argon gas flow to 18 sccm to make the working pressure of the deposition chamber be 0.3 Pa. Turn on the 1# and 2# direct current sputtering target cavities and set the power to be 50 W. Pre-sputter for 10 minutes to clean the contaminants on the surface of the target material.

[0044] (3) Turn on the rotation motor of the substrate and set the rotation speed to be 30 revolutions per minute. Adjust the power of the 1# (Cu target) and 2# (Ta target) direct current sputtering target cavities to be 25 W and 100 W respectively. Open the covers of the target cavities to co-sputter the first layer of Cu 37 Ta 63 amorphous thin film. The co-sputtering deposition rate is 0.1819 nm / s. After 27.5 seconds, close the covers of the two target cavities and wait for 10 seconds. Adjust the power of the 1# and 2# direct current sputtering target cavities to be 87 W and 100 W respectively. Open the covers of the target cavities to co-sputter the next layer of Cu 57 Ta 43 amorphous thin film. The co-sputtering deposition rate is 0.3194 nm / s. The sputtering time is 15.6 seconds. Wait for 10 seconds again. Repeat the previous co-sputtering operation to alternate the deposition of the layers until the deposition of the 240 layers of component layers is completed.

[0045] (4) Turn off the power of the 1# and 2# target cavities. Take out the sample after it is cooled in the vacuum cooling chamber for 1 hour.

[0046] Example 2

[0047] Cu 47 Ta 53 / … / Cu 37 Ta 63 The preparation process of the layered nanometer metallic glass thin film is as follows:

[0048] The other steps are the same as in Example 1, except that in step (3), the first layer co-sputtering deposition parameters are that the power of the 1# (Cu target) and 2# (Ta target) direct current sputtering target cavities are 48 W and 100 W respectively. The co-sputtering deposition rate is 0.2329 nm / s. The sputtering time is 21.5 seconds. The next layer co-sputtering deposition parameters are that the power of the 1# (Cu target) and 2# (Ta target) direct current sputtering target cavities are 87 W and 100 W respectively. The co-sputtering deposition rate is 0.3194 nm / s. The sputtering time is 15.6 seconds.

[0049] Comparative Example 1

[0050] A kind of Cu 37 Ta 63A method for preparing a single-component metallic glass thin film, and the specific preparation process is as follows:

[0051] (1) Cu target (purity 99.99%) and Ta target (purity 99.99%) were respectively installed on No. 1 and No. 2 direct current sputtering target cavities in the deposition chamber, and then a single crystal silicon (100) substrate was installed on the base plate in the deposition chamber. The cabin door of the deposition chamber was closed, and the vacuum was pumped to 9x10 -5 Pa.

[0052] (2) High-purity argon gas with a purity of 99.999% was introduced, and the argon gas flow was adjusted to 180 sccm to make the pressure in the deposition chamber reach 5.9 Pa. The bias power was turned on with a power of 50 W, and the silicon wafer cleaning was performed for 5 minutes. After the silicon wafer cleaning was completed, the argon gas flow was adjusted to 18 sccm to make the working pressure of the deposition chamber 0.3 Pa, and the power of No. 1 and No. 2 direct current sputtering target cavities was set to 50 W. The 1 and 2 target cavities were opened to pre-sputter for 10 minutes to clean the surface of the target material.

[0053] (3) The rotation motor of the substrate was turned on, and the rotation speed was set to 30 revolutions per minute. The power of No. 1 (Cu target) and No. 2 (Ta target) direct current sputtering target cavities was adjusted to 25 W and 100 W respectively, and the covers of No. 1 and No. 2 target cavities were opened for co-sputtering Cu 37 Ta 63 metallic glass thin film, and the total deposition rate of co-sputtering was 0.1819 nm / s, and the co-sputtering time was 74 minutes.

[0054] (4) When the co-sputtering reaches the required time, the power of No. 1 and No. 2 target cavities is turned off, and the sample is sent to the vacuum cooling chamber for cooling for 1 hour and then taken out.

[0055] Comparative Example 2

[0056] A Cu 57 Ta 43 A method for preparing a single-component metallic glass thin film, and the specific preparation process is as follows:

[0057] (1) Cu target (purity 99.99%) and Ta target (purity 99.99%) were respectively installed on No. 1 and No. 2 direct current sputtering target cavities in the deposition chamber, and then a single crystal silicon (100) substrate was installed on the base plate in the deposition chamber. The cabin door of the deposition chamber was closed, and the vacuum was pumped to 9x10 -5 Pa.

[0058] (2) The high-purity argon gas with purity of 99.999% was introduced, and the argon flow rate was adjusted to 180 sccm to make the pressure in the deposition chamber reach 5.9 Pa. The bias power was turned on to make the power be 50 W, and the silicon wafer cleaning was performed for 5 minutes. After the silicon wafer cleaning was completed, the argon flow rate was adjusted to 18 sccm to make the working pressure of the deposition chamber be 0.3 Pa, and the 1# and 2# direct current sputtering target cavities were opened to set the power to be 50 W, and the 10-minute pre-sputtering was performed to clean the contaminants on the surface of the target.

[0059] (3) The rotation motor of the substrate was turned on, and the rotation speed was set to be 30 revolutions per minute. The power of the 1# (Cu target) and 2# (Ta target) direct current sputtering target cavities was adjusted to be 69 W and 80 W respectively, and the covers of the 1# and 2# target cavities were opened to co-sputter Cu 57 Ta 43 The total deposition rate of the co-sputtered metal glass thin film was 0.2542 nm / s, and the co-sputtering time was 66 minutes.

[0060] (4) When the co-sputtering reached the required time, the power of the 1# and 2# target cavities was turned off, and the sample was sent to the vacuum cooling chamber to cool for 1 h and then taken out.

[0061] The characterization results of X-ray diffraction and transmission electron microscopy of Example 1 and Comparative Examples 1 and 2 showed that the CuTa layered nanometal glass prepared by the method was in an amorphous state, and the internal layered structure was clearly visible, as shown in FIGS. 1(a) and 1(b). Figure 1 , FIGS. 2(a) and 2(b). Figure 2 In addition, the nanoindentation test results showed that the nano-hardness of the Cu 37 Ta 63 single-component metal glass (Comparative Example 1) and the Cu 57 Ta 43 single-component metal glass (Comparative Example 2) was 6.6 GPa and 9.6 GPa respectively, and the nano-hardness of the Cu 57 Ta 43 / Cu 37 Ta 63 layered nanometal glass was 8.4 GPa, which was 0.3 GPa higher than the hardness calculated based on the mixing rule of Comparative Examples 1 and 2 ((6.6+9.6) / 2=8.1 GPa), as shown in FIG. 3. Figure 3 Subsequently, three microindentation experiments were performed on each sample, and the load was 100 mN. The results showed that a large number of shear bands appeared around the indentations of the single-component metal glass thin films (Comparative Examples 1 and 2) (FIGS. 4(a) and 4(b)), indicating that the plasticity was poor; and no shear band was generated around the indentation of the layered nanometal glass, which exhibited uniform plastic deformation, as shown in FIG. 5. Figure 4 (a) and (b)). Figure 4(c) as shown. The layered nanometer metal glass film prepared by the present application forms dense amorphous / amorphous interfaces by alternately depositing CuTa amorphous alloys with the same elements but different compositions, and limits the single layer thickness to 5 nanometers, which makes the shear banding units (shear transformation zones) in the metal glass not have enough space to form shear bands in a single component layer, and the dense amorphous / amorphous interfaces further limit the diffusion of the shear transformation zones between the layers, thereby realizing uniform plastic deformation. The above experimental results show that the nanometer metal glass prepared by this method realizes the combination of high strength and high deformation capacity, and it is pointed out that the high deformation capacity is mainly due to the small layer thickness and the high density of amorphous / amorphous interfaces, so changing the composition of the components within the amorphous forming range of Cu-Ta can also obtain experimental results consistent with the present application.

[0062] The above describes the preferred embodiments of the present application, and it should be pointed out that for ordinary skilled persons in the technical field, several improvements and refinements can be made without departing from the principles of the present application, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. A layered nanometallic glass thin film having high hardness and high deformability, characterized in that, The multilayer metallic glass thin film with high-density nanometer amorphous / amorphous interface is formed by alternately depositing CuTa alloys with the same elements but different contents, thicknesses of single component layers in the alternately deposited layers are all 5 nm, total number of layers of the thin film is greater than 200, and total thickness of the thin film is greater than 1 μm. The preparation method of the layered nanometer metallic glass thin film with high hardness and high deformation capacity comprises the following steps: S1: selecting single element Cu target material and Ta target material, fixing the selected single element Cu target material and Ta target material in 1# and 2# direct current sputtering target cavities in a deposition chamber, and vacuumizing the inside of the deposition chamber; S2: mounting a substrate to a three-jaw chuck in the deposition chamber, and adjusting the spacing between the substrate and the target material; S3: filling argon, adjusting the argon flow to control the initial gas pressure of the deposition chamber, setting the bias power to clean the substrate, adjusting the argon flow to control the pre-sputtering gas pressure of the deposition chamber, and setting the power of 1# and 2# direct current sputtering target cavities to pre-sputter; The initial gas pressure is 4-8 Pa, the bias power is 30-50 W, and the cleaning time is 5-10 min; the pre-sputtering gas pressure is 0.3 Pa, the power of 1# and 2# direct current sputtering target cavities is 30-50 W, and the pre-sputtering time is 10-15 min; S4: controlling the rotating speed of a substrate motor, adjusting the power of 1# and 2# target cavities, sputtering, closing the target cavity cover after the first layer of sputtering is completed, waiting for 10-15 s, adjusting the power of 1# and 2# target cavities, opening the target cavity cover again to sputter, closing the target cavity cover after the second layer of sputtering is completed, waiting again for 10-15 s, repeating the previous steps to alternately deposit, until the deposition is completed, and vacuum cooling to room temperature.

2. The layered nanometallic glass thin film with high hardness and high deformability according to claim 1, characterized in that, The Cu element content of the single component layer alloy element is 37 at.% to 57 at.%, and the Ta element content is 43 at.% to 63 at.%.

3. The layered nanometallic glass thin film with high hardness and high deformability according to claim 2, characterized in that, The hardness of the layered nanometer metallic glass thin film with high hardness and high deformation capacity is as high as 8.4 GPa.

4. The layered nanometallic glass thin film with high hardness and high deformability according to claim 1, characterized in that, The inside of the deposition chamber in step S1 is vacuumed to below 1.0 x 10 -4 Pa; the purity of the Cu target and the Ta target is higher than 99.99%.

5. The layered nanometallic glass thin film with high hardness and high deformability according to claim 4, characterized in that, In step S2, the substrate is a (100) oriented single crystal silicon with a size of 2 inch*0.4 mm, a single side polishing, and an electrical resistivity less than 0.1 Ω·cm; and the spacing between the substrate and the target material is 88-138 mm.

6. The layered nanometallic glass thin film with high hardness and high deformability according to claim 1, wherein, In step S4, the power of 1# and 2# target cavities is 25 W-87 W and 100 W respectively, the total sputtering deposition rate is 0.1819 nm / s-0.3194 nm / s, the rotating speed of the motor is 10-30 r / min, and the cooling time is 1-3 h.

7. The layered nanometallic glass thin film with high hardness and high deformability according to claim 6, characterized in that, The purity of the argon is higher than 99.999%.

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