A method and system for obtaining leakage status of plain reservoir basin

Abstract

The present invention discloses a method and system for obtaining leakage conditions of a plain reservoir basin. Through the collection of reservoir data and the preliminary investigation of the background resistivity of the surrounding original aquifer, the electrode spacing a of the continuous high-density electrical method on water is calculated according to the average water depth of the plain reservoir, and the continuous high-density electrical method measurement array A on water is further determined. According to the resistivity of reservoir water, the resistivity of groundwater, and the background resistivity of the surrounding original aquifer, the resistivity threshold of the leakage area is determined, and the resistivity data at the depth d in the resistivity profile of the reservoir basin is extracted. According to the resistivity threshold, the leakage area of ​​the reservoir basin at different depths is located in detail. Through the present invention, the leakage investigation survey line can be scientifically designed, the data collection density can be reasonably planned, the quality of the detection results can be improved, and the purpose of more detailed and accurate evaluation of the leakage condition of the reservoir basin can be achieved.

Description

Technical Field

[0001] The present invention relates to the field of reservoir detection, and more specifically, to a method and system for acquiring leakage conditions of a plain reservoir basin. Background Art

[0002] Plain reservoirs are important hubs of water conservancy projects and key infrastructure for water resource storage, dispatching, and optimal utilization. They play an important role in the supply of industrial, agricultural, and domestic water, and provide water resource support for the economic development of plain areas. However, plain reservoirs are affected by geological, hydrological, meteorological, and human factors. Their strata usually have good permeability. Even if corresponding anti-seepage measures are taken, they are still prone to leakage problems under years of continuous high water level operation. This will not only cause a waste of water resources, but also lead to the surrounding groundwater level to rise, causing secondary environmental geological problems such as swamping and salinization.

[0003] In recent years, the government has continuously increased its attention to the detection and management of dangerous reservoirs, and the demand for leakage detection in plain reservoirs has been growing. However, the leakage points of plain reservoirs are usually located underwater. Due to the shielding and obstruction of reservoir water, they are difficult to detect and locate. Once the leakage develops into an abnormal phenomenon visible to the naked eye, the management and repair work will be extremely costly, and large-scale uncontrolled leakage will pose a serious threat to the safe operation of the reservoir. On the other hand, the water resources in plain reservoirs are usually used as a source of water for industrial, agricultural and domestic use, and the scope of pollution is wide. In addition, the anti-seepage structure system that has been built in the reservoir cannot be easily disturbed, otherwise it will cause more serious impacts and losses. Therefore, there are many restrictions and high requirements on the leakage detection methods of plain reservoirs.

[0004] At present, the main method for obtaining the leakage status of plain reservoirs is geophysical technology, but it is mainly for leakage analysis of the reservoir dam area, and there is a lack of methods for obtaining the leakage status of the reservoir basin. The leakage of plain reservoir basins is often ignored in the existing leakage status investigation methods, but the impact and damage caused by reservoir basin leakage cannot be underestimated. The few methods for obtaining the leakage status of reservoir basins usually use passive source technology in geophysics, which has the disadvantages of low efficiency, poor anti-interference ability, and one-sided results, and cannot accurately grasp the overall leakage status of the plain reservoir basin area. Therefore, there is an urgent need for a method to accurately grasp the leakage status of reservoir basins. Summary of the invention

[0005] The invention overcomes the defects of the prior art and proposes a method and system for acquiring the leakage status of a plain reservoir basin.

[0006] The first aspect of the present invention provides a method for obtaining leakage conditions of a plain reservoir basin, comprising:

[0007] S1: Collection of basic reservoir data and surrounding original aquifer background resistivity ρ b preliminary investigation;

[0008] S2: Based on the average water depth D of plain reservoirs ave , calculate the electrode spacing a of the continuous high-density electrical method on water;

[0009] S3: Based on the background resistivity ρ of the surrounding original aquifer b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave , determine the continuous high-density electrical measurement array A on water;

[0010] S4: Determine the number of continuous high-density electrical survey lines N on the water according to the length L and width W of the plain reservoir. L and the length of the measuring line l, and the number of apparent resistivity data collection points N on the measuring line is determined according to the length of the measuring line l P , according to the set survey line, the apparent resistivity data ρ in the measurement area is collected by using the continuous high-density electrical method on water;

[0011] S5: The average apparent resistivity of the first layer on a single measuring line The data quality of the survey line is evaluated by using the apparent resistivity error E of the first n layers at all survey line intersections. an Assess the overall data quality of the survey;

[0012] S6: According to the reservoir water resistivity ρ w , groundwater resistivity ρ g 、The background resistivity of the surrounding original aquifer ρ b , determine the resistivity threshold ρ of the leakage area t ;

[0013] S7: Invert the apparent resistivity data ρ, obtain the reservoir basin resistivity profile, and compare the reservoir basin bottom formation resistivity ρ r and resistivity threshold ρ t , delineate the overall reservoir basin leakage area Z;

[0014] S8: Extract the resistivity data ρ at depth d in the reservoir resistivity profile d , according to the resistivity threshold ρ t , detailed positioning of the reservoir basin leakage area Z at different depths d .

[0015] In this scheme, the basic data of the reservoir collected includes the length L, width W, maximum water depth D of the plain reservoir. max 、Reservoir water resistivity ρ w , groundwater resistivity ρ g, average groundwater level d ave , aquifer background resistivity ρ b The preliminary investigation was carried out in the area around the reservoir using the ground high-density electrical method. The detection depth of the ground high-density electrical method should be at the average groundwater level d ave Below, the distance H between the location of the preliminary investigation and the axis of the dam is determined according to the following formula:

[0016]

[0017] Where W is the width of the reservoir.

[0018] 3. A method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that the electrode spacing a of the above-water continuous high-density electrical method is based on the average water depth D of the plain reservoir. ave Determine and satisfy the following expression:

[0019] 0.5D ave <a<1.5D ave ,a∈N

[0020] In this scheme, the number of continuous high-density electrical method lines on water is N L The length L and width W of the plain reservoir are determined according to the following formula:

[0021]

[0022] Where x, y satisfy:

[0023]

[0024] The length of the measuring line along the length direction l L satisfy:

[0025] l L =L-100m

[0026] Length of the measuring line along the width direction l W satisfy:

[0027] l W =W-100m

[0028] The number of apparent resistivity data collection points N on the survey line P Determine as follows:

[0029]

[0030] Where z satisfies:

[0031] Where z is a parameter that controls the number of data collection points in the measurement area.

[0032] In this solution, the measuring array A is composed of 13 electrodes, and the positions along the measuring direction are numbered 1, 2, 3, ..., 13 in sequence. The measuring electrodes C1 and C2 are used for power supply, and the measuring electrodes P1, P2, P3 ..., P 11 The data consists of 10 channels. The specific electrode positions and measurement channels are based on the surrounding original aquifer background resistivity ρ b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave The position numbering of the electrodes to be tested in the measurement array A follows the following principles:

[0033] (1) If or or

[0034] The array

[0035] A1: C1(2), C2(12), P1(7), P2(8), P3(6), P4(9), P5(5), P6(10), P7(4), P8(11), P9(3), P 10 (13) P 11 (1);

[0036] (2) If or or

[0037] The array

[0038] A2: C1(3), C2(11), P1(7), P2(8), P3(6), P4(9), P5(5), P6(10), P7(4), P8(12), P9(2), P 10 (13) P 11 (1);

[0039] (3) If or or

[0040] The array

[0041] A3: C1(4), C2(10), P1(7), P2(8), P3(6), P4(9), P5(5), P6(11), P7(3), P8(12), P9(2), P 10 (13) P 11 (1);

[0042] (4) If or or

[0043] The array

[0044] A4: C1(5), C2(9), P1(7), P2(8), P3(6), P4(10), P5(4), P6(11), P7(3), P8(12), P9(2), P 10 (13) P 11 (1);

[0045] (5) If

[0046] The array

[0047] A5: C1(6), C2(8), P1(7), P2(9), P3(5), P4(10), P5(4), P6(11), P7(3), P8(12), P9(2), P 10 (13) P 11 (1);

[0048] The 10 measurement channels in measurement array A are:

[0049] P1~P2, P2~P3, P3~P4, P4~P5, P5~P6, P6~P7, P7~P8, P8~P9, P9~P 10 , P 10 ~P 11 , the measured apparent resistivity data are divided into 10 layers, which are:

[0050] ρ a1 , a2 , a3 , a4 , a5 , a6 , a7 , a8 , a9 , a10 .

[0051] In this scheme, the average apparent resistivity of the first layer on a single measuring line is Evaluate the data quality of this survey line:

[0052]

[0053] Where: is the average apparent resistivity of the first layer of all data collection points on the i-th survey line, is the apparent resistivity value of the first layer at the jth data collection point on the i-th survey line, N Pis the number of apparent resistivity data collection points on the i-th survey line;

[0054] The apparent resistivity data quality of a single survey line has passed Make an evaluation: When or hour, It means that the survey line data quality is excellent and can be directly used for inversion; When or hour, This means that the survey line data is of good quality and can be used for inversion after simple processing of the offset data; When or hour, This means that the survey line data quality is unqualified and the apparent resistivity data is unreliable. The survey line should be re-measured and the re-measured data should be re-evaluated until the data quality reaches excellent or good.

[0055] The apparent resistivity error E of the first n layers at all survey line intersections is used an Assess the overall data quality of the survey:

[0056]

[0057] Where: is the relative error of the apparent resistivity of the first n layers at the intersection of the mth survey line, are the apparent resistivity values ​​of the nth layer at the data collection point along the width direction and along the length direction at the mth survey line intersection, X is the number of all survey line intersections, E an The apparent resistivity error of the first n layers at all survey line intersections;

[0058] The overall data quality of the survey was evaluated by E an Evaluation: When n≤3, if E an ≤0.05, the overall data quality is excellent and the survey results are credible. <E an ≤0.1, the overall data quality is good, the survey results are relatively credible, and the results can be verified by combining sampling and other work. an >0.1, the overall data quality is unqualified and the survey results are unreliable. The survey plan and parameters should be redesigned and measured again until the overall data quality reaches excellent or good. When n>3, if E an ≤0.1, the overall data quality is excellent and the survey results are credible. <E an ≤0.2, the overall data quality is good, the survey results are relatively credible, and the results can be verified by combining sampling and other work. anIf the value is >0.3, the overall data quality is unsatisfactory and the survey results are unreliable. The survey plan and parameters should be redesigned and measured again until the overall data quality reaches excellent or good.

[0059] In this solution, the resistivity threshold value ρ of the leakage area t Determined by the following formula:

[0060]

[0061] Where: w is the resistivity of reservoir water, ρ g is the groundwater resistivity, ρ b is the background resistivity of the surrounding original aquifer;

[0062] The delineation of the overall leakage area Z of the reservoir basin follows the following principles:

[0063] If w < g , then the resistivity ρ of the leakage area z r And should satisfy: ρ t ≤ρ r < b ;

[0064] If w >ρ G , then the resistivity ρ of the leakage area z r And should satisfy: ρ b < R ≤ρ t .

[0065] In this solution, the reservoir leakage area Z at different depths d , through the resistivity data ρ at depth d in the reservoir resistivity profile d For positioning, when ρ w < g When d ≥ρ b and ρ d < t The area will be removed, and the remaining ρ t ≤ρ d < b The area is the reservoir leakage area Z at depth d d When ρ w >ρ g When d >ρ t and ρ d ≥ρ b The area will be removed, and the remaining ρ b < r ≤ρ tThe area is the reservoir leakage area Z at depth d d .

[0066] The second aspect of the present invention further provides a system for acquiring leakage conditions of a plain reservoir basin, the system comprising: a memory and a processor, the memory comprising a program for acquiring leakage conditions of a plain reservoir basin, the program for acquiring leakage conditions of a plain reservoir basin implementing the following steps when executed by the processor:

[0067] S1: Collection of basic reservoir data and surrounding original aquifer background resistivity ρ b preliminary investigation;

[0068] S2: Based on the average water depth D of plain reservoirs ave , calculate the electrode spacing a of the continuous high-density electrical method on water;

[0069] S3: Based on the background resistivity ρ of the surrounding original aquifer b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave , determine the continuous high-density electrical measurement array A on water;

[0070] S4: Determine the number of continuous high-density electrical survey lines N on the water according to the length L and width W of the plain reservoir. L and the length of the measuring line l, and the number of apparent resistivity data collection points N on the measuring line is determined according to the length of the measuring line l P , according to the set survey line, the apparent resistivity data ρ in the measurement area is collected by using the continuous high-density electrical method on water;

[0071] S5: The average apparent resistivity of the first layer on a single measuring line The data quality of the survey line is evaluated by using the apparent resistivity error E of the first n layers at all survey line intersections. an Assess the overall data quality of the survey;

[0072] S6: According to the reservoir water resistivity ρ w , groundwater resistivity ρ g 、The background resistivity of the surrounding original aquifer ρ b , determine the resistivity threshold ρ of the leakage area t ;

[0073] S7: Invert the apparent resistivity data ρ, obtain the reservoir basin resistivity profile, and compare the reservoir basin bottom formation resistivity ρ r and resistivity threshold ρ t , delineate the overall reservoir basin leakage area Z;

[0074] S8: Extract the resistivity data ρ at depth d in the reservoir resistivity profile d, according to the resistivity threshold ρ t , detailed positioning of the reservoir basin leakage area Z at different depths D .

[0075] In this scheme, the basic data of the reservoir collected includes the length L, width W, maximum water depth D of the plain reservoir. max 、Reservoir water resistivity ρ w , groundwater resistivity ρ g , average groundwater level d ave , aquifer background resistivity ρ b The preliminary investigation was carried out in the area around the reservoir using the ground high-density electrical method. The detection depth of the ground high-density electrical method should be at the average groundwater level d ave Below, the distance H between the location of the preliminary investigation and the axis of the dam is determined according to the following formula:

[0076]

[0077] Where W is the width of the reservoir.

[0078] Through the scheme of the present invention, the following beneficial effects can be achieved:

[0079] The method of the present invention can determine the electrode spacing and measurement array used for leakage detection in plain reservoirs through quick and simple preliminary investigation data, which greatly reduces the tedious preliminary survey preparation work and numerical simulation work. According to the shape and size of the reservoir, the leakage investigation line is scientifically designed, the data collection density is reasonably planned, and the quality of the detection results is improved.

[0080] The method of the invention overcomes the shortcoming that continuous measurement on water cannot achieve data reciprocity, and proposes an evaluation method for the apparent resistivity data quality of a single survey line when detecting leakage in a plain reservoir basin by high-density electrical method on water. The apparent resistivity data characteristics of all survey lines in the investigation are comprehensively considered, and the measurement data of the same area at the intersection of the survey lines is used. Through the data errors of all intersections, the overall data quality is evaluated more scientifically.

[0081] The method of the present invention realizes the layered delineation of leakage areas in the reservoir basin of plain reservoirs, characterizes the distribution of the overall leakage area and non-leakage area of ​​the reservoir basin by the resistivity profile and the resistivity threshold of the leakage area, extracts isobath resistivity data to construct horizontal resistivity profiles at different depths of the reservoir basin, delineates leakage areas at multiple depths, and evaluates the leakage status of the reservoir basin in a more detailed and accurate manner.

[0082] The present invention discloses a method and system for obtaining leakage conditions of a plain reservoir basin. Through the collection of reservoir data and the preliminary investigation of the background resistivity of the surrounding original aquifer, the electrode spacing a of the continuous high-density electrical method on water is calculated according to the average water depth of the plain reservoir, and the continuous high-density electrical method measurement array A on water is further determined. According to the resistivity of reservoir water, the resistivity of groundwater, and the background resistivity of the surrounding original aquifer, the resistivity threshold of the leakage area is determined, and the resistivity data at the depth d in the resistivity profile of the reservoir basin is extracted. According to the resistivity threshold, the leakage area of ​​the reservoir basin at different depths is located in detail. Through the present invention, the leakage investigation survey line can be scientifically designed, the data collection density can be reasonably planned, the quality of the detection results can be improved, and the purpose of more detailed and accurate evaluation of the leakage condition of the reservoir basin can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0083] Figure 1 A flow chart showing a method for obtaining leakage status of a plain reservoir basin according to the present invention is shown;

[0084] Figure 2 A schematic diagram showing the distribution of survey lines and survey line intersections provided by one or more embodiments of the present invention is shown;

[0085] Figure 3 A schematic diagram of an array for continuous high-density electrical measurement on water provided by one or more embodiments of the present invention is shown;

[0086] Figure 4 A schematic diagram of apparent resistivity layering at the intersection of survey lines provided by one or more embodiments of the present invention is shown;

[0087] Figure 5 A schematic diagram of delineating the leakage area of ​​the entire reservoir basin provided by one or more embodiments of the present invention is shown;

[0088] Figure 6 A schematic diagram of delineating reservoir basin leakage areas at different depths provided by one or more embodiments of the present invention is shown;

[0089] Figure 7 A block diagram of a system for acquiring leakage conditions of a plain reservoir basin according to the present invention is shown. DETAILED DESCRIPTION

[0090] In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0091] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0092] Figure 1 A flow chart showing a method for acquiring leakage conditions of a plain reservoir basin according to the present invention.

[0093] Embodiment 1:

[0094] like Figure 1 As shown, this embodiment provides a method for obtaining leakage conditions of a plain reservoir basin, and the method for obtaining apparent resistivity data of a plain reservoir basin includes the following steps:

[0095] S1: Collection of basic reservoir data and surrounding original aquifer background resistivity ρ b preliminary investigation;

[0096] S2: Based on the average water depth D of plain reservoirs ave , calculate the electrode spacing a of the continuous high-density electrical method on water;

[0097] S3: Based on the background resistivity ρ of the surrounding original aquifer b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave , determine the continuous high-density electrical measurement array A on water;

[0098] S4: Determine the number of continuous high-density electrical survey lines N on the water according to the length L and width W of the plain reservoir. L and the length of the measuring line l, and the number of apparent resistivity data collection points N on the measuring line is determined according to the length of the measuring line l P According to the set survey line, the apparent resistivity data ρ in the measurement area is collected using the continuous high-density electrical method on water.

[0099] Figure 2 A schematic diagram showing the distribution of survey lines and survey line intersections provided by one or more embodiments of the present invention is shown;

[0100] In this embodiment, the basic information collected for the plain reservoir includes: the length L = 3000m, the width W = 2000m, the maximum water depth D max =11m, average water depth D ave =9m, reservoir water resistivity ρ w =9.5Ω·m, groundwater resistivity ρ g =0.9Ω·m, average groundwater level d ave= 1 m. The background investigation around the reservoir is carried out by using the ground high-density resistivity method. The distance H from the position of the preliminary investigation to the dam axis satisfies As Figure 2 shown, in this embodiment, H ≤ 100 m. The detection depth of the ground high-density resistivity method is greater than the average groundwater level, and the background resistivity ρ of the aquifer is measured b = 1.5 Ω·m.

[0101] The electrode spacing a of the continuous high-density resistivity method on water is determined according to the average water depth D of the plain reservoir ave That is, 0.5D ave < a < 1.5D ave , a ∈ N. In this embodiment, the average water depth D of the plain reservoir ave = 9 m. Therefore, the electrode spacing a of the continuous high-density resistivity method on water should satisfy: 4.5 < a < 13.5, a ∈ N. In this embodiment, a = 5 is taken.

[0102] Figure 3 shows the schematic diagram of the measurement array of the continuous high-density resistivity method on water provided by one or more embodiments of the present invention;

[0103] The measurement array A of the continuous high-density resistivity method on water consists of 13 electrodes, and the position numbers along the measurement direction are successively 1, 2, 3,..., 13. The power is supplied by the power supply electrodes C1 and C2, and at the same time, the data of 10 channels composed of the measurement electrodes P1, P2, P3,..., P 11 are measured. According to the background resistivity ρ of the original aquifer around, the resistivity ρ of the reservoir water b , the maximum water depth D w , and the average water depth D max , the position numbers of the power supply electrodes in the measurement array A follow the following principle: If ave or or or then it is array A1; if or or then it is array A2; if or or then it is array A3; if or or then it is array A4; if then it is array A5. The detailed description of the positions of the power supply electrodes and the measurement channels in the above arrays A1 to A5 is as Figure 3 shown. In this embodiment, meets the conditions of array A4. Therefore, the measurement array is determined as A4 in this embodiment.

[0104] Number of continuous high-density electrical survey lines on water N L Determined according to the length L and width W of the plain reservoir, x, y are parameters that control the density of the measurement lines in the measurement area. In this embodiment, L = 3000m, W = 2000m, so x = 200m, y = 300m, and the number of measurement lines N L =10+10, that is, in this embodiment, there are 10 continuous high-density electrical method lines on the water in the length direction and the width direction, such as Figure 2 The length of the measuring line along the length direction is l L Satisfy L =L-100m, the length of the measuring line along the width direction l W Satisfy W =W-100m, in this embodiment, l L =2900m,l W = 1900m, the number of points for collecting apparent resistivity data on the survey line is N P satisfy z is a parameter that controls the number of data collection points in the measurement area. In this embodiment, z = 10m, so the number of data collection points along the length direction is N. P =290, the number of data collection points along the width direction N P = 190. Drive along the survey line at the set speed and use the continuous high-density electrical method on water to collect apparent resistivity data ρ in the survey area.

[0105] Embodiment two:

[0106] like Figure 1 As shown, this embodiment provides a method for obtaining leakage conditions of a plain reservoir basin, and for evaluating the quality of apparent resistivity data of a plain reservoir basin, comprises the following steps:

[0107] S5: The average apparent resistivity of the first layer on a single measuring line The data quality of the survey line is evaluated by using the apparent resistivity error E of the first n layers at all survey line intersections. an Assess the overall data quality of the survey.

[0108] Figure 4 A schematic diagram of apparent resistivity layering at the intersection of survey lines provided by one or more embodiments of the present invention is shown;

[0109] Figure 4 This is a schematic diagram of the apparent resistivity layering at the intersection of the measuring line 1 and the measuring line 2 in this embodiment 1, where the average apparent resistivity of the first layer of the measuring line 1 is Average apparent resistivity of the first layer of line 2 Reservoir water resistivity ρ w =9.5Ω·m, so it satisfies and The apparent resistivity data representing the two survey lines are of excellent quality and can be used directly for inversion.

[0110] In this embodiment, there are 100 intersection points of all the measurement lines, such as Figure 2 As shown in the figure, the apparent resistivity error E of the first three layers at all survey line intersections is a3 and the apparent resistivity error E of the first five layers a5 They are:

[0111]

[0112]

[0113] Where: and is the relative error of the apparent resistivity of the first 3 layers and the first 5 layers at the intersection of the mth survey line, They are the apparent resistivity values ​​of the nth layer at the data collection points along the width direction and along the length direction at the intersection of the mth survey line.

[0114] According to the measured data in this embodiment, E a3 =0.033, E a5 =0.053, for the apparent resistivity data of the first three layers, when n≤3, E a3 =0.033≤0.05, indicating that the overall data quality is excellent and the survey results are credible; for the apparent resistivity data of the first 5 layers, when n>3, E a5 =0.053≤0.1, indicating that the overall data quality is excellent and the survey results are credible.

[0115] Embodiment three:

[0116] like Figure 1 As shown, this embodiment provides a method for obtaining the leakage status of a plain reservoir basin, and for delineating the leakage area of ​​a plain reservoir basin, the method includes the following steps:

[0117] S6: According to the reservoir water resistivity ρ w , groundwater resistivity ρ g 、The background resistivity of the surrounding original aquifer ρ b , determine the resistivity threshold ρ of the leakage area t ;

[0118] S7: Invert the apparent resistivity data ρ, obtain the reservoir basin resistivity profile, and compare the reservoir basin bottom formation resistivity ρ r and resistivity threshold ρ t , delineate the overall reservoir basin leakage area Z;

[0119] S8: Extract the resistivity data ρ at depth d in the reservoir resistivity profile d, according to the resistivity threshold ρ t , detailed positioning of the reservoir basin leakage area Z at different depths d .

[0120] Leakage area resistivity threshold ρ t Determined by the following formula:

[0121]

[0122] Where: w is the reservoir water resistivity, ρ g is the groundwater resistivity, ρ b is the background resistivity of the surrounding original aquifer.

[0123] The delineation of the overall leakage area Z of the reservoir basin follows the following principles:

[0124] If w < g , then the resistivity ρ of the leakage area Z r And should satisfy: ρ t ≤ρ r < b ;

[0125] If w >ρ g , then the resistivity ρ of the leakage area Z r And should satisfy: ρ b < r ≤ρ t .

[0126] Figure 5 A schematic diagram of delineating the leakage area of ​​the entire reservoir basin provided by one or more embodiments of the present invention is shown;

[0127] In this embodiment, And w >ρ g , then the resistivity ρ of the leakage area Z r And should satisfy: 1.5Ω·m<ρ r ≤15.8Ω·m. Based on this, the overall leakage area Z in this embodiment is delineated, such as Figure 5 shown.

[0128] Figure 6 A schematic diagram of delineating reservoir basin leakage areas at different depths provided by one or more embodiments of the present invention is shown;

[0129] Leakage area Z of reservoir basin at different depths d , through the resistivity data ρ at depth d in the reservoir resistivity profile d For positioning, when ρ w < g Whend ≥ρ b and ρ d < t The area will be removed, and the remaining ρ t ≤ρ d < b The area is the reservoir leakage area Z at depth d d When ρ w >ρ g When d >ρ t and ρ d ≥ρ b The area will be removed, and the remaining ρ b < r ≤ρ t The area is the reservoir leakage area Z at depth d d In this embodiment, the iso-depth resistivity data of d1, d2, d3, d4, and d55 depths are taken to locate the reservoir leakage area Z at different depths in detail. d ,like Figure 6 shown.

[0130] According to the third embodiment of the present invention, it also includes:

[0131] Obtain the reservoir basin leakage areas at five depths of d1, d2, d3, d4, and d5, and mark the infiltration areas as Z1, Z2, Z3, Z4, and Z5 respectively;

[0132] Construct a visual basin infiltration model based on the shape and size of the basin;

[0133] According to Z1, Z2, Z3, Z4, and Z5, the location, contour, and area information of the five infiltration areas are imported into the basin reservoir infiltration model;

[0134] Analyze and extract the shape contour features of the penetration area at each depth to obtain the contour features of the penetration area at different depths;

[0135] Based on the outline features of the infiltration area and in combination with the depth, a multi-depth continuous simulation is performed on the outline of the infiltration area, and a three-dimensional infiltration area model is obtained;

[0136] Import the infiltration area model into the basin reservoir infiltration model;

[0137] Get the user-specified depth d;

[0138] Import d into the basin-reservoir permeability model, and based on d, obtain the model cross section of the basin-reservoir permeability model at the corresponding depth position to obtain a two-dimensional permeability cross-sectional diagram;

[0139] The penetration cross-sectional diagram includes information on depth d, penetration area, and non-penetration area;

[0140] The infiltration cross-section diagram and the basin reservoir infiltration model are displayed through a preset terminal device.

[0141] It should be noted that the basin-reservoir infiltration model is a visualized three-dimensional model, through which users can preview the leakage status of the reservoir more intuitively. The present invention performs continuous simulation based on the infiltration areas Z of different depths in the known calculation to obtain a basin-reservoir infiltration model based on a three-dimensional model, which allows users to view the basin-reservoir infiltration status more intuitively, and has a good guiding reference for subsequent infiltration assessment and infiltration repair. In addition, the user can specify any depth d to calculate and display the corresponding infiltration area. The preset terminal device includes a computer terminal device and a mobile terminal device.

[0142] Figure 7 A block diagram of a system for acquiring leakage conditions of a plain reservoir basin according to the present invention is shown.

[0143] The second aspect of the present invention further provides a system 4 for obtaining leakage conditions of a plain reservoir basin, the system comprising: a memory 71 and a processor 72, the memory comprising a program for obtaining leakage conditions of a plain reservoir basin, the program for obtaining leakage conditions of a plain reservoir basin being executed by the processor to implement the following steps:

[0144] S1: Collection of basic reservoir data and surrounding original aquifer background resistivity ρ b preliminary investigation;

[0145] S2: Based on the average water depth D of plain reservoirs ave , calculate the electrode spacing a of the continuous high-density electrical method on water;

[0146] S3: Based on the background resistivity ρ of the surrounding original aquifer b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave , determine the continuous high-density electrical measurement array A on water;

[0147] S4: Determine the number of continuous high-density electrical survey lines N on the water according to the length L and width W of the plain reservoir. L and the length of the measuring line l, and the number of apparent resistivity data collection points N on the measuring line is determined according to the length of the measuring line l P , according to the set survey line, the apparent resistivity data ρ in the measurement area is collected by using the continuous high-density electrical method on water;

[0148] S5: The average apparent resistivity of the first layer on a single measuring line The data quality of the survey line is evaluated by using the apparent resistivity error E of the first n layers at all survey line intersections. anAssess the overall data quality of the survey;

[0149] S6: According to the reservoir water resistivity ρ w , groundwater resistivity ρ g 、The background resistivity of the surrounding original aquifer ρ t , determine the resistivity threshold ρ of the leakage area t ;

[0150] S7: Invert the apparent resistivity data ρ, obtain the reservoir basin resistivity profile, and compare the reservoir basin bottom formation resistivity ρ r and resistivity threshold ρ t , delineate the overall reservoir basin leakage area Z;

[0151] S8: Extract the resistivity data ρ at depth d in the reservoir resistivity profile D , according to the resistivity threshold ρ T , detailed positioning of the reservoir basin leakage area Z at different depths D .

[0152] The present invention discloses a method and system for obtaining leakage conditions of a plain reservoir basin. Through the collection of reservoir data and the preliminary investigation of the background resistivity of the surrounding original aquifer, the electrode spacing a of the continuous high-density electrical method on water is calculated according to the average water depth of the plain reservoir, and the continuous high-density electrical method measurement array A on water is further determined. According to the resistivity of reservoir water, the resistivity of groundwater, and the background resistivity of the surrounding original aquifer, the resistivity threshold of the leakage area is determined, and the resistivity data at the depth d in the resistivity profile of the reservoir basin is extracted. According to the resistivity threshold, the leakage area of ​​the reservoir basin at different depths is located in detail. Through the present invention, the leakage investigation survey line can be scientifically designed, the data collection density can be reasonably planned, the quality of the detection results can be improved, and the purpose of more detailed and accurate evaluation of the leakage condition of the reservoir basin can be achieved.

[0153] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0154] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed on multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0155] In addition, all functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may be separately used as a unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0156] Those skilled in the art can understand that: all or part of the steps of implementing the above method embodiments can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above method embodiments; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), disks or optical disks, and other media that can store program codes.

[0157] Alternatively, if the above-mentioned integrated unit of the present invention is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present invention can be essentially or partly reflected in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROM, RAM, magnetic disks or optical disks.

[0158] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A method for obtaining leakage status of a plain reservoir basin, characterized in that: include: S1: Collection of basic reservoir data and surrounding original aquifer background resistivity ρ b preliminary investigation; S2: Based on the average water depth D of plain reservoirs ave , calculate the electrode spacing a of the continuous high-density electrical method on water; S3: Based on the background resistivity ρ of the surrounding original aquifer b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave , determine the continuous high-density electrical measurement array A on water; S4: Determine the number of continuous high-density electrical survey lines M on the water based on the length L and width W of the plain reservoir L and the length of the survey line l, and the number of apparent resistivity data collection points M on the survey line is determined according to the length of the survey line l P , according to the set survey line, the apparent resistivity data ρ in the measurement area is collected by using the continuous high-density electrical method on water; S5: The average apparent resistivity of the first layer on a single measuring line The data quality of the survey line is evaluated by using the apparent resistivity error E of the first n layers at all survey line intersections. an Assess the overall data quality of the survey; S6: According to the reservoir water resistivity ρ w , groundwater resistivity ρ g 、The background resistivity of the surrounding original aquifer ρ b , determine the resistivity threshold ρ of the leakage area t ; S7: Invert the apparent resistivity data ρ, obtain the reservoir basin resistivity profile, and compare the reservoir basin bottom formation resistivity ρ r and resistivity threshold ρ t , delineate the overall reservoir basin leakage area Z; S8: Extract the resistivity data ρ at depth d in the reservoir resistivity profile d , according to the resistivity threshold ρ t , detailed positioning of the reservoir basin leakage area Z at different depths d .

2. The method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that: The basic data of the reservoir include the length L, width W, maximum water depth D of the plain reservoir. max 、Reservoir water resistivity ρ w , groundwater resistivity ρ g , average groundwater level d ave , aquifer background resistivity ρ b The preliminary investigation was carried out in the area around the reservoir using the ground high-density electrical method. The detection depth of the ground high-density electrical method should be at the average groundwater level d ave Below, the distance H between the location of the preliminary investigation and the axis of the dam is determined according to the following formula: Where W is the width of the reservoir.

3. The method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that: The electrode spacing a of the above-water continuous high-density electrochemical method is based on the average water depth D of the plain reservoir. ave Determine and satisfy the following expression: 0.5D ave <a<1.5D ave , a is a positive integer.

4. The method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that: The number of continuous high-density electrical method lines on water N L The length L and width W of the plain reservoir are determined according to the following formula: Where x, y satisfy: The length of the measuring line along the length direction l L satisfy: the L =100m Length of the measuring line along the width direction l W satisfy: l W =W-100m The number of apparent resistivity data collection points N on the survey line P Determine as follows: Where z satisfies: Where z is a parameter that controls the number of data collection points in the measurement area.

5. The method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that: The measuring array A is composed of 13 electrodes, the positions of which are numbered 1, 2, 3, ..., 13 in the measuring direction, and are powered by the power supply electrodes C1 and C2. 11 The specific electrode positions and measurement channels are determined according to the surrounding original aquifer background resistivity ρ b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave The position numbering of the electrodes to be tested in the measurement array A follows the following principles: (1) If or or Then the array A1 is: C1(2), C2(12), P1(7), P2(8), P3(6), P4(9), P5(5), P6(10), P7(4), P8(11), P9(3), P 10 (13)、P 11 (1); (2) If or or The array A2:C1(3)、C2(11)、P1(7)、P2(8)、P3(6)、P4(9)、P5(5)、P6(10)、P7(4)、P8(12)、P9(2)、P 10 (13)、P 11 (1); (3) If or or The array A3:C1(4)、C2(10)、P1(7)、P2(8)、P3(6)、P4(9)、P5(5)、P6(11)、P7(3)、P8(12)、P9(2)、P 10 (13)、P 11 (1); (4) If or or The array A4: C1(5), C2(9), P1(7), P2(8), P3(6), P4(10), P5(4), P6(11), P7(3), F8(12), P9(2), P 10 (13)、P 11 (1); (5) If The array A5:C1(6)、C2(8)、P1(7)、P2(9)、P3(5)、Q4(10)、Q5(4)、P6(11)、P7(3)、P8(12)、P9(2)、P 10 (13)、P 11 (1)? The 10 measurement channels in measurement array A are: P1~P2, P2~P3, P3~P4, P4~P5, P5~P6, P6~P7, P7~P8, P8~P9, P9~P 10 , P 10 ~P 11 , the measured apparent resistivity data are divided into 10 layers, which are: r a1 ,r a2 ,r a3 ,r a4 ,r a5 ,r a6 ,r a7 ,r a8 ,r a9 ,r a10 。 6. The method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that: The average apparent resistivity of the first layer on a single measuring line Evaluate the data quality of this survey line: Where: is the average apparent resistivity of the first layer of all data collection points on the i-th survey line, is the apparent resistivity value of the first layer at the jth data collection point on the i-th survey line, N P is the number of apparent resistivity data collection points on the i-th survey line; The apparent resistivity data quality of a single survey line has passed Make an evaluation: When or hour, It means that the survey line data quality is excellent and can be directly used for inversion; When or hour, This means that the survey line data is of good quality and can be used for inversion after simple processing of the offset data; When or hour, This means that the survey line data quality is unqualified and the apparent resistivity data is unreliable. The survey line should be re-measured and the re-measured data should be re-evaluated until the data quality reaches excellent or good. The apparent resistivity error E of the first n layers at all survey line intersections is used an Assess the overall data quality of the survey: Where: is the relative error of the apparent resistivity of the first n layers at the intersection of the mth survey line, are the apparent resistivity values ​​of the nth layer at the data collection point along the width direction and along the length direction at the mth survey line intersection, X is the number of all survey line intersections, E an The apparent resistivity error of the first n layers at all survey line intersections; The overall data quality of the survey was evaluated by E an Evaluation: When n≤3, if E an ≤0.05, the overall data quality is excellent and the survey results are credible. <E an ≤0.1, the overall data quality is good, the survey results are relatively credible, and the results can be verified by combining sampling and other work. an >0.1, the overall data quality is unqualified and the survey results are unreliable. The survey plan and parameters should be redesigned and measured again until the overall data quality reaches excellent or good. When n>3, if E an ≤0.1, the overall data quality is excellent and the survey results are credible. <E an ≤0.2, the overall data quality is good, the survey results are relatively credible, and the results can be verified by combining sampling work. an If the value is greater than 0.3, the overall data quality is unsatisfactory and the survey results are unreliable. The survey plan and parameters should be redesigned and measured again until the overall data quality reaches excellent or good.

7. The method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that: The resistivity threshold value ρ of the leakage area t Determined by the following formula: Where: w is the reservoir water resistivity, ρ g is the groundwater resistivity, ρ b is the background resistivity of the surrounding original aquifer; The delineation of the overall leakage area Z of the reservoir basin follows the following principles: If w < g , then the resistivity ρ of the leakage area Z r And should satisfy: ρ t ≤ρ r < b ; If w >ρ g , then the resistivity ρ of the leakage area Z r And should satisfy: ρ b < r ≤ρ t .

8. The method for obtaining leakage status of a plain reservoir basin according to claim 1, characterized in that: The reservoir leakage area Z at different depths d , through the resistivity data ρ at depth d in the reservoir resistivity profile d For positioning, when ρ w < g When d ≥ρ b and ρ d < t The area will be removed, and the remaining ρ t ≤ρ d < b The area is the reservoir leakage area Z at depth d d When ρ w >ρ g When d >ρ t and ρ d ≥ρ b The area will be removed, and the remaining ρ b < r ≤ρ t The area is the reservoir leakage area Z at depth d d .

9. A system for obtaining leakage status of plain reservoir basin, characterized in that: The system includes: a memory and a processor. The memory includes a program for obtaining leakage status of a plain reservoir basin. When the program for obtaining leakage status of a plain reservoir basin is executed by the processor, the following steps are implemented: S1: Collection of basic reservoir data and surrounding original aquifer background resistivity ρ b preliminary investigation; S2: Based on the average water depth D of plain reservoirs ave , calculate the electrode spacing a of the continuous high-density electrical method on water; S3: Based on the background resistivity ρ of the surrounding original aquifer b 、Reservoir water resistivity ρ w 、Maximum water depth D max and average water depth D ave , determine the continuous high-density electrical measurement array A on water; S4: Determine the number of continuous high-density electrical survey lines M on the water based on the length L and width W of the plain reservoir L and the length of the survey line l, and the number of apparent resistivity data collection points M on the survey line is determined according to the length of the survey line l P , according to the set survey line, the apparent resistivity data ρ in the measurement area is collected by using the continuous high-density electrical method on water; S5: The average apparent resistivity of the first layer on a single measuring line The data quality of the survey line is evaluated by using the apparent resistivity error E of the first n layers at all survey line intersections. an Assess the overall data quality of the survey; S6: According to the reservoir water resistivity ρ w , groundwater resistivity ρ g 、The background resistivity of the surrounding original aquifer ρ b , determine the resistivity threshold ρ of the leakage area t ; S7: Invert the apparent resistivity data ρ, obtain the reservoir basin resistivity profile, and compare the reservoir basin bottom formation resistivity ρ r and resistivity threshold ρ t , delineate the overall reservoir basin leakage area Z; S8: Extract the resistivity data ρ at depth d in the reservoir resistivity profile d , according to the resistivity threshold ρ t , detailed positioning of the reservoir basin leakage area Z at different depths d .

10. A system for acquiring leakage status of a plain reservoir basin according to claim 9, characterized in that: The basic data of the reservoir include the length L, width W, maximum water depth D of the plain reservoir. max 、Reservoir water resistivity ρ w , groundwater resistivity ρ g , average groundwater level d ave , aquifer background resistivity ρ b The preliminary investigation was carried out in the area around the reservoir using the ground high-density electrical method. The detection depth of the ground high-density electrical method should be at the average groundwater level d ave Below, the distance H between the location of the preliminary investigation and the axis of the dam is determined according to the following formula: Where W is the width of the reservoir.

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