A kind of evaporation device and evaporation method

Abstract

The application discloses an evaporation device and an evaporation method. The evaporation device comprises a shell, the shell defining an evaporation cavity; an evaporation source arranged at the bottom of the evaporation cavity; a carrier arranged at the top of the evaporation cavity and opposite to the evaporation source, the carrier being used for carrying a substrate to be evaporated; and a thickness adjusting assembly arranged between the evaporation source and the carrier, the thickness adjusting assembly comprising an adjusting rod and at least one spherical body arranged on the adjusting rod, the adjusting rod being located on a plane parallel to the substrate to be evaporated; wherein the adjusting rod rotates circumferentially around a perpendicular bisector of the substrate to be evaporated; or the adjusting rod reciprocates in a direction from one end of the substrate to be evaporated to the opposite end. The evaporation material in the region corresponding to the motion track of the spherical body is shielded through the circumferential motion or reciprocation of the spherical body, thereby improving the thickness uniformity of the thin film formed by evaporation.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of evaporation, and particularly relates to an evaporation device and an evaporation method. BACKGROUND

[0002] Evaporation refers to a technology of heating a material to be evaporated under certain vacuum conditions, so that the material is melted (or sublimated) and forms a vapor composed of atoms, molecules or atom groups, and the vapor is condensed on a substrate surface to form a film. Evaporation is a gas phase deposition technology used early and widely, and has advantages of simple film forming method, high film purity and compactness, unique film structure and performance, etc. Evaporation is widely used in preparation of film layer structures. For example, in the preparation process of optoelectronic devices such as OLED, a hole functional layer and other film layers are usually prepared by evaporation.

[0003] However, the film formed by vacuum evaporation is often not uniform in thickness. For example, when a point source is used for evaporation, the film in the center region of the substrate is usually thicker, and the film in the edge region of the substrate is usually thinner. Especially when a large-size substrate is evaporated, the phenomenon of non-uniform thickness is more obvious. The non-uniform thickness of the evaporation film seriously affects the performance of devices or equipment including the film, such as causing uneven display of OLED devices. SUMMARY

[0004] Therefore, the present application provides an evaporation device and an evaporation method, aiming to improve the problem of non-uniform thickness of the evaporation film.

[0005] The present application is implemented in the following manner. An evaporation device is provided, which comprises a housing defining an evaporation cavity, an evaporation source arranged at the bottom of the evaporation cavity, a carrier arranged at the top of the evaporation cavity and arranged opposite to the evaporation source, the carrier being used for carrying a substrate to be evaporated, and a thickness adjusting assembly arranged between the evaporation source and the carrier, the thickness adjusting assembly comprising an adjusting rod and at least one spherical body arranged on the adjusting rod, the adjusting rod being located on a plane parallel to the substrate to be evaporated, wherein the adjusting rod rotates circumferentially about a perpendicular bisector of the substrate to be evaporated, or the adjusting rod reciprocates in a direction from one end of the substrate to be evaporated to the opposite end.

[0006] Optionally, in some embodiments of the present application, the number of the spherical bodies located in the central region of the adjusting rod is greater than the number of the spherical bodies located in the end region of the adjusting rod.

[0007] Optionally, in some embodiments of the present application, the distance between two adjacent spherical bodies close to one side of the end of the adjusting rod is greater than or equal to the distance between two adjacent spherical bodies close to the center of the adjusting rod.

[0008] Optionally, in some embodiments of the present application, the number of the balls per unit length gradually decreases along the center of the adjusting rod towards either end of the adjusting rod; and / or the distance between two adjacent balls gradually increases along the center of the adjusting rod towards either end of the adjusting rod.

[0009] Optionally, in some embodiments of the present application, the rotating speed of the adjusting rod is 0.1-1000 rpm, or the speed of the reciprocating motion of the adjusting rod is 0.1-10 m / s; and / or the distance between two adjacent balls is 1-10000 microns; and / or the temperature of the balls is 25-1500℃; and / or the diameter of the balls is 1-10000 microns.

[0010] Optionally, in some embodiments of the present application, the evaporation source comprises a plurality of sub-evaporation sources; wherein the plurality of sub-evaporation sources are arranged in a ring shape; or the plurality of sub-evaporation sources are arranged in a linear array.

[0011] Optionally, in some embodiments of the present application, the thickness adjusting assembly further comprises a lifting part, the lifting part is arranged at the edge of the evaporation source, the two ends of the adjusting rod are connected with the lifting part, and the lifting part is used to adjust the distance between the adjusting rod and the evaporation source; wherein the distance between the adjusting rod and the evaporation source is 0.1 m-10 m.

[0012] Optionally, in some embodiments of the present application, the materials of the adjusting rod and the balls are independently selected from one or more of metal, alloy, nylon fiber or carbon fiber.

[0013] Correspondingly, the embodiments of the present application also provide an evaporation method applied to an evaporation device, the evaporation device comprising a shell defining an evaporation cavity, an evaporation source arranged at the bottom of the evaporation cavity, and a carrier arranged at the top of the evaporation cavity and opposite to the evaporation source;

[0014] The evaporation method comprises:

[0015] evaporating a test substrate carried on the carrier to form a test film;

[0016] determining the feature information of a thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source, wherein the thickness adjusting assembly comprises an adjusting rod and at least one ball arranged on the adjusting rod, and the adjusting rod is located on a plane parallel to the test substrate;

[0017] According to the characteristic information of the thickness adjusting assembly, the thickness adjusting assembly is arranged between the evaporation source and a to-be-evaporated substrate carried on the carrier and parallel to the to-be-evaporated substrate, and the adjusting rod is controlled to rotate circumferentially with the vertical bisector of the to-be-evaporated substrate as an axis or to reciprocate in a direction from one end of the to-be-evaporated substrate to the opposite end, so as to evaporate and form a first film on the to-be-evaporated substrate.

[0018] Optionally, in some embodiments of the present application, when the evaporation source is a point evaporation source, the adjusting rod is controlled to rotate circumferentially with the vertical bisector of the to-be-evaporated substrate as an axis; or when the evaporation source is a line evaporation source, the adjusting rod is controlled to reciprocate in a direction from one end of the to-be-evaporated substrate to the opposite end.

[0019] Optionally, in some embodiments of the present application, the characteristic information of the thickness adjusting assembly is determined based on the film thickness distribution information of the test film and the type of the evaporation source, including: determining initial characteristic information of the thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source; setting the thickness adjusting assembly according to the initial characteristic information, and controlling the adjusting rod to rotate circumferentially or reciprocate, so as to evaporate and form a test adjusting film; and adjusting the initial characteristic information to obtain the characteristic information of the thickness adjusting assembly based on the film thickness distribution information of the test adjusting film.

[0020] Optionally, in some embodiments of the present application, after the test substrate carried on the carrier is evaporated to form a test film, it includes: judging whether the film thickness distribution meets a preset film thickness range based on the film thickness distribution information of the test film; if not, performing the determination of the characteristic information of the thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source.

[0021] Optionally, in some embodiments of the present application, after the first film is evaporated on the to-be-evaporated substrate, it further includes: applying a voltage to heat both ends of the adjusting rod to evaporate and remove the evaporated material attached to the adjusting rod and the spherical body.

[0022] Optionally, in some embodiments of the present application, the characteristic information of the thickness adjusting assembly includes structure information of the thickness adjusting assembly, motion information of the thickness adjusting assembly, and height information of the adjusting rod, wherein the height information of the adjusting rod is the distance between the adjusting rod and the evaporation source.

[0023] The evaporation device provided by the application comprises a shell, the shell defines an evaporation cavity, an evaporation source is arranged at the bottom of the evaporation cavity, a carrier is arranged at the top of the evaporation cavity and is arranged opposite to the evaporation source, the carrier is used for carrying a substrate to be evaporated, a thickness adjusting assembly is arranged between the evaporation source and the carrier, the thickness adjusting assembly comprises an adjusting rod and at least one spherical body arranged on the adjusting rod, and the adjusting rod is located on a plane parallel to the substrate to be evaporated; wherein the adjusting rod rotates circumferentially around the perpendicular bisector of the substrate to be evaporated; or the adjusting rod reciprocates in the direction from one end of the substrate to be evaporated to the opposite end. The circumferential movement or reciprocating movement of the spherical body can shield the evaporation material in the corresponding area of the movement track of the spherical body, thereby improving the thickness uniformity of the thin film formed by evaporation. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0025] Figure 1 is a structural schematic diagram of an embodiment of the evaporation device provided by the present application;

[0026] Figure 2 is Figure 1 is a top view structural schematic diagram of the section A-A' in

[0027] Figure 3 is a structural schematic diagram of another embodiment of the evaporation device provided by the present application;

[0028] Figure 4 is a structural schematic diagram of an embodiment of the thickness adjusting assembly provided by the present application;

[0029] Figure 5 is a flowchart of an embodiment of the evaporation method provided by the present application;

[0030] Figure 6a and Figure 6b is a structural schematic diagram of the partition of the test thin film;

[0031] Figure 7 is Figure 5 is a flowchart of a specific embodiment of step S12 in

[0032] Figure 8 is a flowchart of another embodiment of the evaporation method provided by the present application;

[0033] Figure 9 is a film thickness distribution diagram of the first sample piece;

[0034] Figure 10 is a structural schematic diagram of an embodiment of the linear adjustment unit;

[0035] Figure 11 is a film thickness distribution diagram of the second sample piece. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, the orientation words such as "upper" and "lower" are the directions of the drawing surface in the drawings. In addition, in the description of the present application, the term "comprising" means "including but not limited to". Various embodiments of the present application can exist in the form of a range; it should be understood that the description in the form of a range is only for the convenience and brevity, and should not be understood as a hard limitation on the scope of the present application; therefore, it should be considered that the described range has been specifically disclosed all possible sub-ranges and single values within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, regardless of the range. In addition, whenever a numerical range is indicated in this document, it refers to any cited number (fraction or integer) within the indicated range.

[0037] At present, the preparation of thin films by evaporation is the mainstream way, but the thickness of the thin film formed by evaporation is not uniform, especially for large-size thin film structures, the thickness is more uneven, which seriously affects the performance and quality of the device or equipment using the film layer. Therefore, the present application provides an evaporation device and an evaporation method to improve the thickness uniformity of the thin film formed by evaporation, as follows.

[0038] Referring to Figure 1 and Figure 2 , Figure 1 is a structural schematic diagram of an embodiment of the evaporation device provided by the present application, Figure 2 is Figure 1 is a top view structural schematic diagram of the A-A' section in Figure 3 and Figure 4 ,Figure 3 is a structural schematic view of another embodiment of the evaporation device provided in the present application, Figure 4 is a structural schematic view of an embodiment of the thickness adjusting assembly provided in the present application. The evaporation device 100 comprises a housing 10, an evaporation source 20, a thickness adjusting assembly 30 and a carrier 40. The housing 10 defines an evaporation cavity 11, which provides a containing space to contain the evaporation source 20, the thickness adjusting assembly 30 and the carrier 40. The carrier 40 is arranged at the top of the evaporation cavity 11 and is arranged opposite to the evaporation source 20, and the carrier 40 is used to carry a substrate 41 to be evaporated. The thickness adjusting assembly 30 is arranged between the evaporation source 20 and the carrier 40, and the thickness adjusting assembly 30 comprises an adjusting rod 31 and at least one spherical body 32 arranged on the adjusting rod 31, and the adjusting rod 31 is located on a plane parallel to the substrate 41 to be evaporated.

[0039] In the embodiment, the adjusting rod 31 rotates circumferentially around the perpendicular bisector of the substrate 41 to be evaporated as the axis, or the adjusting rod 31 reciprocates along the direction from one end of the substrate 41 to be evaporated to the opposite end. It can be understood that the perpendicular bisector of the substrate 41 to be evaporated is a line that is perpendicular to and passes through the center of the substrate 41 to be evaporated.

[0040] In the embodiment, by arranging the thickness adjusting assembly 30 between the evaporation source 20 and the substrate 41 to be evaporated, the adjusting rod 31 and the spherical body 32 thereon of the thickness adjusting assembly 30 rotate circumferentially or reciprocate, so as to shield the evaporation material in the area corresponding to the motion track of the spherical body 32, thereby improving the thickness uniformity of the thin film formed by evaporation.

[0041] In an embodiment, in combination with Figure 3 The adjusting rod 31 reciprocates along the X direction, and the X direction is the direction from one end of the substrate 41 to be evaporated to the opposite end.

[0042] In an embodiment, the size of the at least one spherical body 32 arranged on the adjusting rod 31 is in the range of 1-10000 microns, such as 1-1000 microns, 1-100 microns, 1-10 microns, 1000-10000 microns, 100-10000 microns, 500-1000 microns, 1000-5000 microns, 5000-10000 microns, etc. When there are multiple spherical bodies 32 on the adjusting rod 31, the sizes of the multiple spherical bodies 32 can all be the same or each independently have a corresponding size. The distribution of the multiple spherical bodies 32 on the adjusting rod 31, or the spacing between each spherical body 32 and the adjacent spherical body 32, can be set accordingly.

[0043] In one embodiment, the distance between each of the balls 32 and the adjacent balls 32 can be in the range of 1-100 millimeters (mm), such as 1-10 mm, 10-50 mm, 50-100 mm, etc. It is appreciated that the distance range between the balls 32 can be determined by considering the size of the evaporation chamber 11, the size of the adjusting rod 31, the size of the substrate 41 to be evaporated, etc. The number, size, and distance of the balls 32 on the adjusting rod 31 can be set according to the non-uniformity of the film thickness and the film thickness distribution.

[0044] In one embodiment, the number of the balls 32 located in the central region of the adjusting rod 31 is greater than the number of the balls 32 located in the end region of the adjusting rod 31. By arranging more balls 32 in the central region of the adjusting rod 31, the central region of the substrate 41 to be evaporated is more shielded by the thickness adjusting assembly 30 when the substrate 41 to be evaporated is evaporated, thereby reducing the thickness of the central region of the film formed on the substrate 41 to be evaporated and improving the thickness uniformity of the film formed on the substrate 41 to be evaporated.

[0045] Further, in one embodiment, the number of the balls 32 per unit length gradually decreases in the direction from the center of the adjusting rod 31 to any one end of the adjusting rod 31. That is, the density of the balls 32 gradually increases in the direction from the side close to the end of the adjusting rod 31 to the side close to the center of the adjusting rod 31, thereby achieving that the central region of the substrate 41 to be evaporated is more shielded by the thickness adjusting assembly 30 when the substrate 41 to be evaporated is evaporated, thereby reducing the thickness of the central region of the film formed on the substrate 41 to be evaporated and improving the thickness uniformity of the film formed on the substrate 41 to be evaporated.

[0046] In another embodiment, the distance between two adjacent balls 32 close to the end of the adjusting rod 31 is greater than or equal to the distance between two adjacent balls 32 close to the center of the adjusting rod 31. That is, the distance between the two adjacent balls 32 close to the center of the adjusting rod 31 is smaller, or the balls 32 close to the center of the adjusting rod 31 are more densely distributed. By this arrangement, the central region of the substrate 41 to be evaporated is more shielded by the thickness adjusting assembly 30 when the substrate 41 to be evaporated is evaporated, thereby reducing the thickness of the central region of the film formed on the substrate 41 to be evaporated and improving the thickness uniformity of the film formed on the substrate 41 to be evaporated.

[0047] In another specific embodiment, the distance between two adjacent balls 32 gradually increases along the center of the adjusting rod 31 towards either end of the adjusting rod 31. That is, the distance between two adjacent balls 32 gradually decreases from the end of the adjusting rod 31 towards the center of the adjusting rod 31, and the balls 32 on the side close to the center of the adjusting rod 31 are more densely distributed. By this arrangement, the thickness adjusting assembly 30 can shield the central region of the substrate 41 to be evaporated more, thereby reducing the thickness of the central region of the film formed on the substrate 41 to be evaporated, and improving the thickness uniformity of the film formed on the substrate 41 to be evaporated.

[0048] It can be understood that the at least one ball 32 arranged on the adjusting rod 31 can be symmetrically distributed along the center of the adjusting rod 31, or can be asymmetrically distributed. That is, the distribution of the balls 32 along the center of the adjusting rod 31 towards either end of the adjusting rod 31 can be the same or different.

[0049] In an embodiment, the evaporation source 20 includes a plurality of sub-evaporation sources 21, such as 2, 5, 10, etc. The number of sub-evaporation sources 21 can be set according to requirements, and is not limited herein. When a plurality of sub-evaporation sources 21 are used for evaporation, the materials evaporated in each sub-evaporation source 21 can be the same or different. Specifically, a plurality of evaporation sources 20 evaporate different materials, and a film containing a composite material can be formed on the substrate by evaporation.

[0050] In an embodiment, the evaporation source 20 is a point evaporation source, and the point evaporation source can be arranged on the perpendicular bisector of the substrate 41 to be evaporated. The evaporation source 20 can also include a plurality of sub-evaporation sources 21, wherein the plurality of sub-evaporation sources 21 are arranged in sequence and in a ring shape, and each sub-evaporation source 21 can be a point evaporation source, thereby realizing evaporation of a large-area substrate 41 to be evaporated. Specifically, in combination with Figure 2 , the plurality of point evaporation sources can be uniformly and dispersedly arranged on the circumference with the center line of the substrate 41 to be evaporated as the center.

[0051] Specifically, the rotating speed of the adjusting rod 31 rotating around the vertical bisector of the substrate 41 to be evaporated can be between 0.1 rpm and 1000 rpm, such as 0.1 rpm to 1 rpm, 1 rpm to 10 rpm, 10 rpm to 100 rpm, 100 rpm to 1000 rpm, 0.1 rpm to 10 rpm, 1 rpm to 100 rpm, etc. Further, in this embodiment, the substrate 41 to be evaporated can rotate around its own vertical bisector. In a specific embodiment, the rotating speed of the substrate 41 to be evaporated is less than the rotating speed of the adjusting rod 31, for example, the rotating speed of the substrate 41 to be evaporated can be 10 rpm, and the rotating speed of the adjusting rod 31 can be 100 rpm. In other embodiments, the rotating speed of the substrate 41 to be evaporated can also be greater than or equal to the rotating speed of the adjusting rod 31.

[0052] Further, in an embodiment, the thickness adjusting assembly 30 comprises a lifting part 33 arranged at the edge of the evaporation source 20, and the two ends of the adjusting rod 31 are connected to the lifting part 33, and the lifting part 33 is used to adjust the distance between the adjusting rod 31 and the evaporation source 20; wherein the distance between the adjusting rod 31 and the evaporation source 20 is between 0.1 m and 10 m, such as 0.1 m to 1 m, 1 m to 5 m, 5 m to 10 m, etc.

[0053] The thickness adjusting assembly 30 further comprises a driving unit 34, which drives the lifting part 33 to rotate around the vertical bisector perpendicular to the plane of the substrate 41 to be evaporated as the axis, or the driving unit 34 drives the lifting part 33 to reciprocate along the vertical bisector parallel to the plane of the substrate 41 to be evaporated.

[0054] In a specific embodiment, the lifting part 33 comprises at least two support rods 331, and the two support rods 331 are respectively connected to the two ends of the adjusting rod 31. Each support rod 331 has one end connected to the adjusting rod 31 and the other end connected to a base 35. In this embodiment, the base 35 can be a ring-shaped base. The power output end (not shown in the figure) of the driving unit 34 is in contact with the ring-shaped base 35 to drive the ring-shaped base to rotate around its center, thereby driving the support rods 331, the adjusting rod 31 and the spherical body 32 connected to the ring-shaped base to rotate synchronously. Further, the center of the ring-shaped base can be on the center line of the substrate 41 to be evaporated. Specifically, the driving unit 34 can be a motor, and the driving unit 34 can drive the ring-shaped base 35 to rotate through gear engagement.

[0055] In the embodiment, the support rod 331 is arranged around or above the at least one evaporation source 20 to avoid blocking the evaporation path of the material in the evaporation source 20 and affecting the evaporation of the thin film. The support rod 331 supports the rotation of the adjusting rod 31 and the spherical body 32 thereon, and the spherical body 32 blocks the evaporation material in the area corresponding to the movement track of the spherical body 32, thereby improving the thickness uniformity of the thin film formed by evaporation.

[0056] In other specific embodiments, the lifting part 33 is a ring wall or a hollow cylinder. The inner wall or the outer wall of the ring wall is in contact with the power output end (not shown in the figure) of the driving unit 34, so that the ring wall is driven to rotate by the driving unit 34, and the adjusting rod 31 and the spherical body 32 thereon mounted on the ring wall are driven to rotate synchronously, and the spherical body 32 blocks the evaporation material in the area corresponding to the movement track of the spherical body 32, thereby improving the thickness uniformity of the thin film formed by evaporation.

[0057] In another embodiment, the evaporation source 20 is a line evaporation source. The line evaporation source can be a linear arrangement combination of a plurality of point evaporation sources, such as a row of line evaporation sources formed by a plurality of point evaporation sources. Or the evaporation source 20 includes a plurality of sub-evaporation sources 21, and the plurality of sub-evaporation sources 21 are arranged in sequence and in linear arrangement, i.e., a linear array formed by a plurality of point evaporation sources, i.e., a plurality of rows of line evaporation sources. In this embodiment, the thickness adjusting assembly 30 can include one or more adjusting rods 31, and the adjusting rod 31 reciprocates along the X direction in the entire line evaporation source area or the corresponding area of the substrate 41 to be evaporated, thereby improving the thickness uniformity of the thin film formed by evaporation, especially the thickness uniformity of the thin film in the Y direction, by blocking the evaporation material in the area corresponding to the movement track of the spherical body 32. Wherein, the X direction is a direction from one end of the substrate 41 to be evaporated to the opposite end, and the Y direction is parallel to the substrate 41 to be evaporated and perpendicular to the X direction. Specifically, the speed of reciprocating motion can be uniform or variable. In a specific embodiment, the speed of reciprocating motion of the adjusting rod is 0.1-10 m / s, such as 0.1-1 m / s, 1-5 m / s, 5-10 m / s, etc.

[0058] In an embodiment, the thickness adjusting assembly 30 can include an adjusting rod 31, the adjusting rod 31 is connected to the lifting part 33, and drives the lifting part 33 to reciprocate in the region corresponding to the adjusting rod 31 under the driving of the driving unit 34. Specifically, the lifting part 33 can include two support rods 331, or the lifting part 33 includes two oppositely arranged support walls (not shown in the figure). The two support rods 331 are respectively connected to the two ends of the adjusting rod 31, or the two support walls are respectively connected to the two ends of the adjusting rod 31. On the one hand, the lifting part 33 provides a certain distance or spacing between the adjusting rod 31 and the ball 32 thereon and the evaporation source 20, and on the other hand, the lifting part 33 or the support wall or the like lifting part 33 does not affect the evaporation of the evaporation material in the evaporation source 20, does not block the evaporation of the material, affects the evaporation of the film, such as causing no film to be formed on the local position of the to-be-evaporated substrate 41, and affects the thickness uniformity and quality of the film formed by evaporation.

[0059] In another embodiment, the thickness adjusting assembly 30 can include a plurality of adjusting rods 31, wherein the plurality of adjusting rods 31 includes two or more adjusting rods 31. At least one ball 32 is arranged on each adjusting rod 31. Specifically, the number, position distribution and size of the ball 32 on each adjusting rod 31 can be the same, of course, they can also be different. Specifically, the plurality of adjusting rods 31 can synchronously reciprocate, or each adjusting rod 31 independently moves in the respective movement region, and the movement speed of each adjusting rod 31 can be the same or different. Further, the movement region covered by the plurality of adjusting rods 31 covers at least the corresponding region of the evaporation source 20 or the region of the to-be-evaporated substrate 41, so as to realize the adjustment of the film thickness on the to-be-evaporated substrate 41 and improve the film thickness uniformity.

[0060] Specifically, each adjusting rod 31 can be connected to two support rods 331 respectively. Alternatively, the two ends of each adjusting rod 31 in the plurality of adjusting rods 31 are connected and arranged on the two support walls, and in this state, the plurality of adjusting rods 31 can synchronously reciprocate with the two support walls under the driving of the driving unit 34. Further, each adjusting rod connected support rod 331 is connected to a base 35, and the driving of the driving unit 34 drives the base 35 to drive the support rod 331 and the plurality of adjusting rods 31 connected thereto to synchronously move.

[0061] Specifically, the base 35 can be a plurality of, and the two support rods 331 connected to each adjusting rod 31 are connected to one base 35, and each base 35 independently moves under the driving of the corresponding driving unit 34, thereby driving each adjusting rod 31 to independently move in the respective movement region.

[0062] In one embodiment, the substrate 41 to be evaporated is moved along the first direction, so as to realize evaporation of the substrate 41 to be evaporated with a large area. That is, the moving direction of the substrate 41 to be evaporated can be the same as the moving direction of the adjusting rod 31. Specifically, the substrate 41 to be evaporated is moved at a constant speed along the first direction.

[0063] In one embodiment, the substrate 41 to be evaporated can be further provided with a first mask 50 on the side close to the evaporation source 20. The first mask 50 can be arranged in abutment with the substrate 41 to be evaporated or arranged oppositely, so as to form a film with a certain pattern on the substrate 41 to be evaporated. In this embodiment, the adjusting rod 31 and the spherical bodies 32 thereon are arranged between the first mask 50 and the evaporation source 20, so as to improve the thickness uniformity of the film formed on the substrate 41 to be evaporated by rotating or reciprocating.

[0064] In the above embodiments, the spherical bodies 32 are arranged on the adjusting rod 31, which can be detachably mounted on the adjusting rod 31, so as to flexibly and conveniently adjust the number and position distribution of the spherical bodies 32 on the adjusting rod 31, and the mounting and removal of the spherical bodies 32 with different sizes. Alternatively, the spherical bodies 32 and the adjusting rod 31 can be integrally formed, forming a linear adjusting portion. The adjusting rod 31 has different numbers, sizes and distributions of the spherical bodies 32, forming different linear adjusting portions. The different linear adjusting portions can be respectively used for adjusting the thickness in different film thickness non-uniform situations.

[0065] In the above embodiments, the material of the adjusting rod 31 can be selected from one or more of metal, alloy, nylon fiber or carbon fiber. The material of the adjusting rod 31 provides the adjusting rod 31 with good strength, so as to support the movement of the adjusting rod 31 and arrange at least one spherical body 32 on the adjusting rod 31. Further, the adjusting rod 31 has conductivity, and the material thereof can be at least one of conductive metal, conductive alloy or conductive carbon fiber. The material of the spherical body 32 can be selected from one or more of metal, alloy, nylon fiber or carbon fiber. It can be understood that the material of the spherical body 32 can be the same as or different from the material of the adjusting rod 31.

[0066] The thickness adjusting assembly 30 will have the evaporation material attached thereon after being used for a period of time, especially on the adjusting rod 31 and the spherical bodies 32 thereon, which can make the thickness distribution adjusting capability of the thickness adjusting assembly 30 worse. In an embodiment, each of the spherical bodies 32 is configured to be temperature adjustable, and the temperature is 25-1500°C. That is, the temperature of each of the spherical bodies 32 can be in the range of 25-1500°C, such as 25-50°C, 50-100°C, 100-500°C, 500-1000°C, 1000-1500°C, etc. By configuring each of the spherical bodies 32 to be temperature adjustable, the temperature of each of the spherical bodies 32 can reach 25-1500°C, so that the evaporation material attached thereon can be evaporated, to keep the thickness adjusting capability of the thickness adjusting assembly 30. Specifically, each of the spherical bodies 32 can be configured to have the temperature of 25-1500°C by applying a voltage to the adjusting rod 31.

[0067] Referring to Figure 5 , Figure 5 is a flowchart of an embodiment of the evaporation method provided by the present application. The present application also provides an evaporation method applied to an evaporation device, which includes a housing defining an evaporation chamber, an evaporation source arranged at the bottom of the evaporation chamber, and a carrier arranged at the top of the evaporation chamber and opposite to the evaporation source. In an embodiment, the evaporation device can refer to the description above. The evaporation method includes the following steps:

[0068] Step S11: Evaporating a test substrate carried on the carrier to form a test film.

[0069] In this step, when evaporating the test substrate, no film thickness adjusting assembly is arranged and used in the evaporation device.

[0070] Step S12: Determining feature information of a thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source, wherein the thickness adjusting assembly includes an adjusting rod and at least one spherical body arranged on the adjusting rod, and the adjusting rod is located on a plane parallel to the test substrate.

[0071] In this step, the film thickness distribution information of the test film can be obtained by detecting the thickness of multiple sites on the test film. Referring to Figure 6a and Figure 6b , Figure 6a and Figure 6b is a structural diagram of the test film being divided into zones. Figure 6a In the embodiment, the test film is divided into a grid, and the thickness of the center of each grid or the intersection between each grid is detected, and the thickness distribution information is obtained based on the obtained thickness data. Figure 6bIn some embodiments, the center region of the test substrate is circular, and the other regions are annular. In some embodiments, the circular region and the annular regions can be further divided into smaller regions by grid lines, so as to provide more accurate thickness distribution information. The thickness of each region can be measured, and a thickness distribution map can be generated based on the measured thickness data. In some embodiments, the center point of the test substrate can be the center of the circumscribed circle.

[0072] In some embodiments, the characteristic information of the thickness adjustment assembly can include structural information of the thickness adjustment assembly. In some embodiments, the structural information of the thickness adjustment assembly can include the number of adjustment rods, the distribution and number of spherical bodies on each adjustment rod, the size of each spherical body, and the like. In some embodiments, the characteristic information of the thickness adjustment assembly can further include height information of the adjustment rods and motion information of the thickness adjustment assembly. In some embodiments, the height of the adjustment rod refers to the height of the adjustment rod relative to the evaporation source. In some embodiments, the motion information can include motion direction, motion speed information, motion trajectory, and motion range information, and the like.

[0073] In some embodiments, the characteristic information of the thickness adjustment assembly can be determined based on the thickness distribution information of the test film and the type of the evaporation source. In some embodiments, the thickness adjustment assembly can include adjustment rods and at least one spherical body disposed on the adjustment rods, and the adjustment rods can be located on a plane parallel to the test substrate.

[0074] In some embodiments, the thickness adjustment assembly can be placed between the evaporation source and the to-be-evaporated substrate carried on the carrier and parallel to the to-be-evaporated substrate based on the characteristic information of the thickness adjustment assembly, and the adjustment rods can be controlled to rotate circumferentially about the perpendicular bisector of the to-be-evaporated substrate, or the adjustment rods can be controlled to reciprocate in a direction from one end of the to-be-evaporated substrate to the opposite end, so as to form a first film on the to-be-evaporated substrate.

[0075] In this step, the test substrate and the substrate to be evaporated can be substrates of the same material, only different in use. The test substrate is used to evaporate to form a test film, so as to determine the characteristic information of the thickness adjusting assembly through the film thickness distribution information of the test film. The substrate to be evaporated is used to evaporate to form a target film. Of course, the test substrate and the substrate to be evaporated can also be substrates of different materials. For example, the substrate to be evaporated can have a multi-layer film structure. If the multi-layer film structure is used as the test substrate, it can cause resource waste. The test substrate can use a common substrate material or a material with a surface material similar to that of the substrate to be evaporated. For a specific evaporation device, the position for setting the substrate is fixed. In this step, the substrate to be evaporated is set at the same position as the test substrate, so as to avoid the change of the position of the substrate leading to the film thickness out of range or uneven, and avoid the change of the position of the substrate leading to the characteristic information of the thickness adjusting assembly determined in step S12 according to the thickness distribution information of the test film on the test substrate being mismatched and unsuitable.

[0076] Further, according to the characteristic information of the thickness adjusting assembly, the thickness adjusting assembly is arranged between the evaporation source and the substrate to be evaporated, so that the adjusting rod and the evaporation source have a certain height and a certain movement speed.

[0077] In this embodiment, the test film is set by the test substrate, the characteristic information of the thickness adjusting assembly can be determined through the film thickness distribution of the test film, the thickness adjusting assembly is installed and arranged between the evaporation source and the substrate to be evaporated based on the characteristic information of the thickness adjusting assembly, and the adjusting rod and the spherical body thereon are controlled to perform circumferential movement or reciprocating movement according to the characteristic information of the thickness adjusting assembly. The movement of the spherical body shields the evaporation material, so as to shield the evaporation material in the area with excessive thickness in the test film, thereby improving the thickness uniformity of the first film formed on the substrate to be evaporated.

[0078] In an embodiment, step S12 can specifically include: based on the evaporation source being a point evaporation source, and based on the film thickness distribution information of the test film, determining the characteristic information of the thickness adjusting assembly, wherein the thickness adjusting assembly includes an adjusting rod and at least one spherical body arranged on the adjusting rod. Correspondingly, step S13 is specifically: setting the substrate to be evaporated at the same position as the test substrate, and arranging the thickness adjusting assembly between the evaporation source and the substrate to be evaporated according to the characteristic information of the thickness adjusting assembly, and controlling the adjusting rod and the spherical body thereon to rotate circumferentially on the substrate to be evaporated along the perpendicular bisector of the substrate to be evaporated as an axis to evaporate to form a first film on the substrate to be evaporated.

[0079] In one embodiment, step S12 can specifically include: determining the feature information of the thickness adjustment assembly based on the evaporation source being a line evaporation source and based on the film thickness distribution information of the test film, wherein the thickness adjustment assembly includes at least one adjustment rod and at least one ball arranged on the adjustment rod. Correspondingly, step S13 is specifically: arranging the to-be-evaporated substrate at the same position as the test substrate, arranging the thickness adjustment assembly between the evaporation source and the to-be-evaporated substrate according to the feature information of the thickness adjustment assembly, and controlling the adjustment rod and the ball thereon to reciprocate in a direction from one end of the to-be-evaporated substrate to the opposite end, so as to evaporate and form a first film on the to-be-evaporated substrate. In this embodiment, the adjustment rod can be one or more. For details, refer to the related description of the adjustment rod in the embodiment in which the evaporation source is a line evaporation source, which will not be repeated here.

[0080] In one embodiment, refer to Figure 7 , Figure 7 is Figure 5 a flowchart of one specific embodiment of step S12 in the method. Step S12 can specifically include the following steps:

[0081] Step S121: determining initial feature information of a thickness adjustment assembly based on the film thickness distribution information of the test film and the type of the evaporation source.

[0082] Step S122: arranging the thickness adjustment assembly according to the initial feature information, and controlling the adjustment rod to rotate circumferentially or reciprocate, so as to evaporate and form a test adjustment film.

[0083] Step S123: adjusting the initial feature information based on the film thickness distribution information of the test adjustment film to obtain the feature information of the thickness adjustment assembly.

[0084] In this embodiment, the initial feature information is adjusted based on the film thickness distribution of the test adjustment film after the thickness adjustment assembly is arranged based on the initial feature information and the test adjustment film is evaporated, so as to obtain the feature information. The thickness adjustment assembly is adjusted by adjusting the test film, so as to improve the adjustment accuracy of the thickness adjustment assembly on the film thickness distribution.

[0085] Further, in this embodiment, the feature information of the thickness adjustment assembly can be adjusted multiple times, that is, in step S123, the film thickness distribution information of the test adjustment film is adjusted based on the test to adjust the initial feature information to obtain the feature information of the thickness adjustment assembly. Specifically, the initial feature information can be adjusted based on the film thickness distribution information of the test adjustment film to obtain adjusted feature information. The thickness adjustment assembly is adjusted and set based on the adjusted feature information, and the test adjustment film is formed again by evaporation. The film thickness distribution information of the test adjustment film formed again is adjusted to obtain new feature information. Until the film thickness distribution of the test adjustment film formed last time meets the preset film thickness range, the feature information obtained last time is determined as the feature information of the thickness adjustment assembly.

[0086] In an embodiment, after step S11, the method further includes: determining whether the film thickness distribution meets the preset film thickness range based on the film thickness distribution information of the test film. If the film thickness distribution does not meet the preset film thickness range, step S12 is performed. If the preset film thickness range is met, the feature information of the thickness adjustment assembly does not need to be determined, the thickness adjustment assembly does not need to be set, and the target film meeting the requirements can be obtained by evaporation. Therefore, the substrate to be evaporated is set at the same position as the test substrate for evaporation to form the first film.

[0087] In a specific embodiment, the thickness range does not exceed ±5% to meet the preset film thickness range. For example, the preset thickness of the first film is 100 nm, and the thickness range can be ±5%. Therefore, the thickness of the first film can be in the range of 95-105 nm to meet the preset thickness range. If the thickness exceeds 105 nm, it is relatively thick, and the spherical body or other structure needs to be set to block the relatively thick area to control the first film to meet the preset thickness range.

[0088] In an embodiment, step S13 can be repeated to form multiple first films. After step S13, the method further includes: applying a voltage to heat both ends of the adjustment rod to evaporate and remove the evaporation material attached to the adjustment rod and the spherical body. In this embodiment, the evaporation material is removed by heating, which is simple and easy to operate, and can improve the thickness adjustment performance of the thickness adjustment assembly. Specifically, the evaporation material can be removed based on the evaporation material attached to the adjustment rod and the spherical body reaching a preset thickness, or the operation can be performed after each evaporation task is completed.

[0089] Referring to Figure 8 , Figure 8 is a flowchart of another embodiment of the evaporation method provided by the present application. In this embodiment, the test substrate includes at least N test substrates, that is, a first test substrate to an Nth test substrate, and N is an integer greater than or equal to 1.

[0090] The evaporation method specifically comprises the following steps:

[0091] Step S21: Evaporation is performed on the Nth test substrate to form an Nth test film.

[0092] Step S22: Based on the film thickness distribution information of the Nth test film and the type of the evaporation source, Nth feature information of a thickness adjusting assembly is determined, wherein the thickness adjusting assembly comprises at least one adjusting rod and at least one spherical body arranged on the adjusting rod.

[0093] Step S23: The N+1th test substrate is arranged at the same position as the Nth substrate, and the thickness adjusting assembly is arranged between the evaporation source and the N+1th test substrate according to the Nth feature information of the thickness adjusting assembly, and the adjusting rod and the spherical body thereon are controlled to rotate circumferentially around the adjusting rod with the perpendicular bisector of the N+1th test substrate as an axis, or to reciprocate in a direction from one end of the N+1th test substrate to the opposite end, so as to evaporate to form an N+1th test film on the N+1th test substrate.

[0094] Step S24: Based on the film thickness distribution information of the N+1th test film, it is determined whether the film thickness distribution meets a preset film thickness range.

[0095] If the film thickness distribution does not meet the preset film thickness range, step S22 is performed, i.e., the N+1th test film is taken as the Nth test film in step S22.

[0096] If the preset film thickness range is met, step S25 is performed: the substrate to be evaporated is arranged at the same position as the N+1th test film, and the thickness adjusting assembly is arranged between the evaporation source and the substrate to be evaporated according to the Nth feature information of the thickness adjusting assembly, and the adjusting rod is controlled to rotate circumferentially around the perpendicular bisector of the substrate to be evaporated, or to reciprocate in a direction from one end of the substrate to be evaporated to the opposite end, so as to evaporate to form a first film on the substrate to be evaporated.

[0097] In the embodiment, after the first characteristic information of the thickness adjusting assembly is determined according to the thickness distribution information of the first test film (N is 1), when the second (N+1) test film formed by further setting the thickness adjusting assembly according to the first characteristic information of the thickness adjusting assembly does not satisfy the preset thickness range, the adjustment of the characteristic information of the thickness adjusting assembly can be continued. The first characteristic information of the thickness adjusting assembly is adjusted according to the thickness distribution information of the second test film, and the second characteristic information of the thickness adjusting assembly is obtained. Then, the thickness adjusting assembly is set according to the second characteristic information of the thickness adjusting assembly, and the evaporation is continued until the thickness distribution information of the test film satisfies the preset thickness range. Then, the N+1 characteristic information of the thickness adjusting assembly is determined as the target thickness adjusting assembly characteristic information. The thickness adjusting assembly is set by using the target thickness adjusting assembly characteristic information, so that the first film satisfying the preset thickness range can be formed by evaporation, and the thickness uniformity of the first film is improved. The display effect of the display device including the first film is improved by improving the thickness uniformity of the film formed by evaporation.

[0098] In an embodiment, the characteristic information of the thickness adjusting assembly includes the structure information of the thickness adjusting assembly, the height information of the adjusting rod, and the motion information of the thickness adjusting assembly. The height of the adjusting rod refers to the height of the adjusting rod relative to the evaporation source. The motion information can include motion direction, motion speed information, motion trajectory, and motion range information. The structure information of the thickness adjusting assembly specifically includes the number of adjusting rods, the distribution and number of spherical bodies on each adjusting rod, and the size of each spherical body. Between the Nth characteristic information of the thickness adjusting assembly and the N+1th characteristic information of the thickness adjusting assembly, the parameters will be adjusted. Specifically, the number and spacing of the spherical bodies on the adjusting rod can be adjusted and determined first, i.e., the distribution of the spherical bodies is determined. Then, the height of the adjusting rod and the motion information (such as the rotation speed) are adjusted and determined. Finally, the size of the ball is adjusted and determined. The order of adjustment is as follows: if the film thickness distribution of the film formed by evaporation with the thickness adjusting assembly having the parameters adjusted and determined first satisfies the requirement, the adjustment is terminated, and the subsequent parameter adjustment is not performed. Generally, in the parameter adjustment process, the initial adjusting rod height value and the initial motion information can be set first. The initial adjusting rod height value and the initial motion information can be irrelevant to the thickness distribution of the test film when evaporation is performed without setting the thickness adjusting assembly. If the film formed by evaporation with the thickness adjusting assembly set according to the characteristic information of the thickness adjusting assembly is overall thinner, the height of the adjusting rod can be increased based on the initial adjusting rod height.

[0099] In a specific embodiment, the HIL layer first sample is first evaporated on the test substrate without using the thickness adjusting assembly. The film thickness of the sample is tested at multiple points, and a film thickness distribution map is formed according to the film thickness distribution information. Referring to FIG. 2, the film thickness distribution map of the HIL layer first sample is shown. The film thickness distribution map of the HIL layer first sample is shown in FIG. 2. Figure 9 , Figure 9is a film thickness distribution diagram of the first sample. The substrate size is 3m*3m, and the thickness ratio C is the ratio of the actual thickness to the target thickness. From Figure 9 It can be seen that the film thickness near the center of the sample is thicker, and the film thickness at the edge of the sample is thinner. The percentage value C between the actual film thickness and the target film thickness of the first sample is not between 100% and 102%, which does not satisfy the preset film thickness range. Based on the film thickness distribution diagram of the sample and the point evaporation source, the characteristic information of the thickness adjusting assembly is determined. The characteristic information of the thickness adjusting assembly includes the structure of the thickness adjusting assembly, such as the thickness adjusting assembly including one adjusting rod and at least one spherical body provided on the adjusting rod, i.e. a linear adjusting part. The number of spherical bodies, the distribution of the spherical bodies on the adjusting rod, and the size of the spherical bodies. The adjusting rod and at least one spherical body thereon are manufactured according to the characteristic information of the thickness adjusting assembly. Referring to Figure 10 , Figure 10 is a structural schematic diagram of an embodiment of the linear adjusting part. The Figure 9 film thickness distribution diagram of the sample in the above embodiment is matched with the adjusting rod, and one or more spherical bodies are arranged at the thicker film thickness part. Specifically, the diameter of the circumscribed circle of the sample can be matched with the adjusting rod of the linear adjusting part. The linear adjusting part can be an axisymmetric structure. The characteristic information of the thickness adjusting assembly includes the height H and the rotating speed F of the linear adjusting part. At this time, the height of the linear adjusting part is determined as H1 (H1 = 1m), and the rotating speed of the linear adjusting part is F1 (F1 = 100rpm).

[0100] Then, the thickness adjusting assembly is arranged according to the characteristic information of the thickness adjusting assembly in the above step, the height of the linear adjusting part is adjusted to H1 (H1 = 1m) by the lifting and lowering part 33, and the linear adjusting part is arranged between the evaporation source and the first mask. The adjusting rod and the spherical body thereon are controlled to rotate around the adjusting rod as the axis of the vertical bisector line perpendicular to the plane of the substrate to be evaporated, and another substrate is evaporated to form a second sample. The film thickness of the second sample is tested at multiple points, and a film thickness distribution diagram of the second sample is drawn, as shown in Figure 11 , Figure 11 is a film thickness distribution diagram of the second sample. It can be seen that the percentage value C between the actual film thickness and the target film thickness of the second sample is between 100% and 102%, which satisfies the preset film thickness range and meets the thickness range specification requirements. Therefore, it is determined that the thickness adjusting assembly is arranged based on the characteristic information of the thickness adjusting assembly when the HIL layer is evaporated. Specifically, Figure 10 the structure of the linear adjusting part shown in the above embodiment, the height of the linear adjusting part is 1m, and the rotating speed of the linear adjusting part is 100rpm.

[0101] After the thickness adjusting assembly is used for a period of time, the film thickness distribution adjusting capability of the thickness adjusting assembly may be deteriorated due to the evaporation material attached thereon. At this time, a voltage can be applied to the linear structure to make the temperature of the linear structure 500℃, and the evaporation material attached thereon is evaporated.

[0102] According to the evaporation method provided in the present application, the feature information of the thickness adjusting assembly corresponding to various evaporation conditions can be determined, and then during evaporation, the corresponding thickness adjusting assembly is set according to the feature information of the thickness adjusting assembly corresponding to a certain evaporation condition, so as to improve the film thickness uniformity under this evaporation condition. The evaporation conditions specifically can include evaporation materials, evaporation sources, substrates, masks, etc. Different evaporation materials, different evaporation sources, different materials, shapes and sizes of substrates, different shapes of masks, etc. are all regarded as different evaporation conditions. It can be understood that the different evaporation conditions are not limited to the above enumeration, and if there are other conditions that will affect the evaporation film thickness, they can all be regarded as evaporation conditions.

[0103] The evaporation device and the evaporation method provided in the embodiments of the present application are described in detail above, and specific examples are applied in the present text to describe the principles and implementation manners of the present application. The above description of the embodiments is only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation manners and application ranges will all have changes, and the above description should not be understood as a limitation on the present application.

Claims

1. An evaporation apparatus, characterized by comprising: include: A housing that defines a vapor deposition chamber; An evaporation source is disposed at the bottom of the vapor deposition chamber. The evaporation source includes multiple sub-evaporation sources, wherein the multiple sub-evaporation sources are arranged sequentially at intervals and in a ring; or, the multiple sub-evaporation sources are arranged sequentially at intervals and in a linear arrangement. A carrier is disposed at the top of the vapor deposition chamber and opposite to the evaporation source. The carrier is used to support the substrate to be vapor-deposited. A thickness adjustment assembly is disposed between the evaporation source and the support member. The thickness adjustment assembly includes an adjustment rod and at least one spherical body disposed on the adjustment rod. The adjustment rod is located on a plane parallel to the substrate to be vaporized. The number of spherical bodies per unit length gradually decreases along the direction from the center of the adjustment rod toward any end of the adjustment rod. The adjusting rod rotates circumferentially about the vertical bisector of the substrate to be vapor-deposited; or, the adjusting rod reciprocates along one end of the substrate to be vapor-deposited towards the opposite end.

2. The evaporation apparatus according to claim 1, wherein The number of spheres located in the central region of the adjusting rod is greater than the number of spheres located in the end region of the adjusting rod.

3. The evaporation apparatus according to claim 1, wherein The distance between two adjacent spheres near the end of the adjusting rod is greater than or equal to the distance between two adjacent spheres near the center of the adjusting rod.

4. The evaporation apparatus according to claim 1, wherein Along the direction from the center of the adjusting rod toward any end of the adjusting rod, the distance between two adjacent spheres gradually increases.

5. The evaporation apparatus according to claim 1, wherein The adjusting rod rotates circumferentially at a speed of 0.1~1000 rpm, or the adjusting rod reciprocates at a speed of 0.1~10 m / s; and / or Each of the spheres is configured to be positionally adjustable on the adjusting rod, with the distance between two adjacent spheres being 1 to 10,000 mm; and / or Each of the spherical bodies is configured to be temperature-adjustable, with a temperature range of 25~1500°C; and / or The diameter of the sphere is 1 to 10,000 micrometers.

6. The evaporation apparatus according to claim 1, wherein The thickness adjustment component further includes: A lifting unit is provided at the edge of the evaporation source. The two ends of the adjusting rod are connected to the lifting unit. The lifting unit is used to adjust the distance between the adjusting rod and the evaporation source. The distance between the adjusting rod and the evaporation source is 0.1m to 10m.

7. The evaporation device according to any one of claims 1 to 6, characterized in that The materials of the adjusting rod and the sphere are independently selected from one or more of metal, alloy, nylon fiber or carbon fiber.

8. An evaporation method, characterized by, The vapor deposition apparatus according to any one of claims 1-7 includes a housing defining a vapor deposition chamber, an evaporation source disposed at the bottom of the vapor deposition chamber, and a support member disposed at the top of the vapor deposition chamber and disposed opposite to the evaporation source. The vapor deposition method includes: A test thin film is formed by vapor deposition on the test substrate supported on the carrier. determining characteristic information of a thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source, wherein the thickness adjusting assembly comprises an adjusting rod and at least one spherical body arranged on the adjusting rod, and the adjusting rod is located on a plane parallel to the test substrate; placing the thickness adjusting assembly between the evaporation source and a to-be-evaporated substrate carried on the carrier and parallel to the to-be-evaporated substrate according to the characteristic information of the thickness adjusting assembly, and controlling the adjusting rod to rotate circumferentially around the perpendicular bisector of the to-be-evaporated substrate or to reciprocate along a direction from one end of the to-be-evaporated substrate to the opposite end, so as to form a first film on the to-be-evaporated substrate by evaporation.

9. The evaporation method according to claim 8, characterized in that, When the evaporation source is a point evaporation source, the adjusting rod is controlled to rotate circumferentially around the perpendicular bisector of the to-be-evaporated substrate; or when the evaporation source is a line evaporation source, the adjusting rod is controlled to reciprocate along a direction from one end of the to-be-evaporated substrate to the opposite end.

10. The evaporation method according to claim 8, wherein The determining of the characteristic information of the thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source comprises: determining initial characteristic information of the thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source; arranging the thickness adjusting assembly according to the initial characteristic information, and controlling the adjusting rod to rotate circumferentially or reciprocate, so as to form a test adjusting film by evaporation; adjusting the initial characteristic information based on the film thickness distribution information of the test adjusting film to obtain the characteristic information of the thickness adjusting assembly.

11. The evaporation method according to claim 10, characterized in that, After the test substrate carried on the carrier is evaporated to form a test film, the method further comprises: judging whether the film thickness distribution meets a preset film thickness range based on the film thickness distribution information of the test film; if not, executing the determining of the characteristic information of the thickness adjusting assembly based on the film thickness distribution information of the test film and the type of the evaporation source.

12. The evaporation method according to claim 8, wherein After the to-be-evaporated substrate is evaporated to form a first film, the method further comprises: applying voltage to both ends of the adjusting rod to heat and evaporate the evaporated material attached to the adjusting rod and the spherical body.

13. The evaporation method according to any one of claims 8 to 12, characterized in that The characteristic information of the thickness adjusting assembly comprises structural information of the thickness adjusting assembly, motion information of the thickness adjusting assembly, and height information of the adjusting rod, wherein the height information of the adjusting rod is the distance between the adjusting rod and the evaporation source.

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