Laser processing apparatus, processing method, and wafer sheet

By forming grooves on the surface of SiC wafers and separating the modified layer using laser processing equipment, the problems of warping and low bending strength caused by the small thickness of SiC wafers are solved, and thin wafers with small thickness and low on-resistance are realized, which are suitable for efficient processing of power devices.

CN117182290BActive Publication Date: 2026-07-03HUAWEI DIGITAL POWER TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HUAWEI DIGITAL POWER TECH CO LTD
Filing Date
2022-06-01
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

When the SiC wafer thickness is too small, warping is obvious, bending strength is low, it is easy to break, and it affects subsequent processing.

Method used

The process involves using laser processing equipment to form trenches on the substrate surface and separating them through a modified layer to produce wafers. By combining laser etching and masking techniques, the shape and depth of the trenches can be precisely controlled to avoid additional damage.

Benefits of technology

The prepared wafers have small thickness, low on-resistance, and high bending strength, making them suitable for power devices. This improves processing accuracy and yield, and reduces costs.

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Abstract

This application provides a laser processing apparatus, a processing method, and a wafer wafer. The laser processing apparatus is used to thin a substrate to form a wafer wafer. The substrate includes a first surface, the first surface includes a first boundary, and the first boundary includes a straight edge and an arc edge. The laser processing apparatus includes a laser module and a lift-off module. The laser module includes a laser, and a first laser emitted by the laser is used to form trenches on the first surface of the substrate according to the processing trajectory to form a second substrate. The trench includes a straight section and an arc section, the straight section being spaced apart from the straight edge, and the arc section being spaced apart from the arc edge. A second laser emitted by the laser is used to modify the region surrounded by the trench, so that a modified layer is formed inside the second substrate to form a third substrate. The third substrate includes a first part, a second part, and a third part. The lift-off module includes a separation sub-module, which is used to separate the third part from the first part along the modified layer to form a wafer wafer with grooves.
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