A semiconductor wafer transmission accuracy monitoring device

Abstract

A semiconductor wafer transmission accuracy monitoring device comprises two mounting bases, a first reflection plate group consisting of M reflection plates, a second reflection plate group consisting of M-1 reflection plates, a first AWC sensor, a second AWC sensor, a movable reflection plate and a rotating mechanism; the first AWC sensor and the second AWC sensor are mounted on two mounting bases at the head and tail of M sensor mounting positions through a mounting bracket; wherein the first reflection plate group and the second reflection plate group are arranged opposite to each other, the first reflection plate group is arranged opposite to the M sensor mounting positions, and the second reflection plate group and the movable reflection plate are mounted on the side of the M sensor mounting positions; the movable reflection plate is located at the position of the second AWC sensor, and the movable reflection plate is rotated 0 to 90 degrees under the drive of the rotating mechanism, and the reflection plates in the second reflection plate group are installed to have the same rotation angle as the movable reflection plate, so as to adapt to the offset detection of wafers of different specifications and sizes transmitted to a vacuum transmission chamber.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor wafer transmission, and in particular to a semiconductor wafer transmission accuracy monitoring device. Background Art

[0002] In the field of semiconductor wafer transmission, wafers are usually stored in a transmission chamber box at equal intervals. In the process of semiconductor chip manufacturing, wafers have various sizes. When the wafer transmission equipment for chip manufacturing accurately transmits wafers of various sizes to the process chamber for processing, it is necessary to detect whether the wafers are offset.

[0003] See also Figure 1 , Figure 1 The figure shows a schematic diagram of the sensor scanning positions of six surfaces that need to be equipped in a conventional vacuum transmission chamber in the prior art. Figure 1 As shown, three sensor installation positions are reserved on each surface of the vacuum transmission chamber.

[0004] See also Figure 2 , Figure 2 FIG. 1 is a schematic diagram of the structure of a semiconductor wafer transmission accuracy monitoring device in the prior art. Figure 2 As shown in the figure, three sensors are directly installed on each surface of the vacuum transfer chamber, and all are connected to the detection system. By installing a seamless switch of the scanning position of the sensor according to actual needs, the offset detection of 200mm and 300mm wafers can be achieved. However, the disadvantage of this design is that the number of sensors used is increased, and the equipment cost is high.

[0005] See also Figure 3 , Figure 3 FIG. 1 is a schematic diagram of the structure of another semiconductor wafer transfer accuracy monitoring device in the prior art. Figure 3 As shown in the figure, although three sensor installation positions are reserved on each surface of the vacuum transmission chamber, only two positions are actually used. If the current size is 300mm, to switch to 200mm, the sensor needs to be disassembled and moved to the middle position. Therefore, the disadvantage of this design is that it cannot switch seamlessly, that is, when switching the size of the wafer to be detected, it must be shut down for maintenance, which takes a long time and has low debugging efficiency. Summary of the invention

[0006] The purpose of the present invention is to provide a semiconductor wafer transmission accuracy monitoring device for solving the problem of wafer transmission accuracy in the whole process of vacuum transmission chamber transmission, while retaining seamless switching efficiency, it can also save equipment costs, that is, while retaining Figure 2 While reducing the number of sensors, it directly saves downtime for maintenance, saves maintenance costs, and improves the recognition efficiency of different wafers.

[0007] In order to achieve the above purpose, this application adopts the following technical solutions:

[0008] A semiconductor wafer transmission accuracy monitoring device, used for performing wafer offset detection on each surface of a vacuum transmission chamber, characterized in that M sensor installation positions are reserved on each surface of the vacuum transmission chamber, including two installation bases, a first reflection plate group consisting of M reflection plates, a second reflection plate group consisting of M-1 reflection plates, a first AWC sensor, a second AWC sensor, a movable reflection plate and a rotating mechanism; the first AWC sensor and the second AWC sensor are installed on the two installation bases at the head and tail of the M sensor installation positions through a mounting bracket; wherein the first reflection plate group and the second reflection plate group are arranged opposite to each other, the first reflection plate group is arranged opposite to the M sensor installation positions, and the second reflection plate group and the movable reflection plate are installed on the side of the M sensor installation positions; the movable reflection plate is located at the relative position between the second AWC sensor and the movable reflection plate, and the movable reflection plate is rotated by 0 to 90 degrees under the drive of the rotating mechanism, and the reflection plates in the second reflection plate group are installed to have the same rotation angle as the movable reflection plate, so as to adapt to the offset detection of wafers of different specifications and sizes transmitted to the vacuum transmission chamber.

[0009] Furthermore, the rotating mechanism includes a cylinder and a connecting rod mechanism.

[0010] Further, the M is 3; the first AWC sensor and the second AWC sensor are installed at the first sensor installation position and the third sensor installation position.

[0011] Furthermore, when the wafer is 300 mm, the reflective plate in the second reflective plate group is vertical.

[0012] Furthermore, when the wafer is 200 mm, the reflective plates in the second reflective plate group are rotated at an angle of 45 degrees.

[0013] The above technical solution provided by the embodiment of the present invention has the following advantages compared with the prior art:

[0014] 1. Under the premise of ensuring the accurate transmission of wafers of various sizes, the present invention does not need to install laser sensors according to the transmission positions of wafers of different sizes. It only uses the cylinder connecting rod mechanism to adjust the angle of the reflector to reflect light and realize one sensor to monitor the transmission accuracy of wafers of two sizes;

[0015] 2. The angle of the reflector is adjusted automatically through the cylinder connecting rod, which is more efficient, convenient and quicker than manual adjustment.

[0016] 3. Using reflectors to reflect light to monitor the transmission accuracy of wafers of another size reduces the number of sensors installed and saves costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0019] Figure 1 The figure shows a schematic diagram of the scanning positions of sensors on six surfaces that are required to be equipped in a conventional vacuum transmission chamber in the prior art.

[0020] Figure 2 The diagram is a schematic diagram of the structure of a semiconductor wafer transmission accuracy monitoring device in the prior art.

[0021] Figure 3 The structure diagram of another semiconductor wafer transmission accuracy monitoring device in the prior art is shown as follows

[0022] Figure 4 A schematic diagram of a preferred embodiment of a semiconductor wafer transfer accuracy monitoring device according to the present invention.

[0023] Figure 5 Schematic diagram of the detection optical path of the semiconductor wafer transmission accuracy monitoring device of the present invention when the wafer is 300mm

[0024] Figure 6 Schematic diagram of the detection optical path of the semiconductor wafer transmission accuracy monitoring device of the present invention when the wafer is 200mm

[0025] Reference numerals: 1. reflector; 2. cylinder; 3. connecting mechanism;

[0026] 4. AWC sensor and its mounting bracket;

[0027] 5. Install the base; 6. Movable reflector. DETAILED DESCRIPTION

[0028] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific embodiments of the present invention are now described in detail with reference to the accompanying drawings. In the following description, it should be understood that the directions or positional relationships indicated by "front", "back", "up", "down", "left", "right", "longitudinal", "horizontal", "vertical", "horizontal", "top", "bottom", "inside", "outside", "head", "tail", etc. are based on the directions or positional relationships shown in the accompanying drawings, are constructed and operated in a specific direction, and are only for the convenience of describing the present technical solution, rather than indicating that the mechanism or element referred to must have a specific direction, and therefore cannot be understood as a limitation to the present invention.

[0029] It should also be noted that, unless otherwise clearly specified and limited, the terms such as "installed", "connected", "connected", "fixed", "set" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. When an element is referred to as being "on" or "under" another element, the element can be "directly" or "indirectly" located on the other element, or there may be one or more intermediate elements. The terms "first", "second", "third", etc. are only for the convenience of describing the present technical solution, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", "third", etc. can explicitly or implicitly include one or more of the features. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

[0030] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present invention. However, it should be clear to those skilled in the art that the present invention may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, mechanisms, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present invention.

[0031] In an embodiment of the present invention, a semiconductor wafer transmission accuracy monitoring device is used to perform wafer offset detection on each surface of a vacuum transmission chamber, wherein M sensor installation positions are reserved on each surface of the vacuum transmission chamber, and the device comprises two installation bases, a first reflection plate group consisting of M reflection plates, a second reflection plate group consisting of M-1 reflection plates, a first AWC sensor, a second AWC sensor, a movable reflection plate and a rotating mechanism; the first AWC sensor and the second AWC sensor are installed on the two installation bases at the head and tail of the M sensor installation positions through a mounting bracket; wherein the first reflection plate group and the second reflection plate group are arranged opposite to each other, the first reflection plate group is arranged opposite to the M sensor installation positions, and the second reflection plate group and the movable reflection plate are installed on the side of the M sensor installation positions; the movable reflection plate is located at the relative position between the second AWC sensor and the movable reflection plate, and the movable reflection plate is rotated by 0 to 90 degrees under the drive of the rotating mechanism, and the reflection plates in the second reflection plate group are installed to have the same rotation angle as the movable reflection plate, so as to adapt to the offset detection of wafers of different specifications and sizes transmitted to the vacuum transmission chamber.

[0032] See also Figure 4 , Figure 4 FIG. 1 is a schematic diagram of a preferred embodiment of a semiconductor wafer transmission accuracy monitoring device according to the present invention. Figure 4 As shown, the reflector 1 and the rotatable reflector 6 are installed on the base 5, and then the cylinder 2 and the connecting rod mechanism 3 are installed, and the AWC sensor and its mounting bracket 4 are installed on the mounting base 5.

[0033] Usually, if Figure 1 As shown, three sensor installation positions are reserved on each surface of the vacuum transmission cavity. The M is 3. In the embodiment of the present invention, the first AWC sensor and the second AWC sensor are installed at the first sensor installation position and the third sensor installation position.

[0034] In the embodiment of the present invention, the rotating mechanism may include a cylinder and a connecting rod mechanism, or other rotating mechanisms, which can rotate the movable reflector. That is, the cylinder drives the connecting rod mechanism to adjust the angle of the reflector, and the irradiation position of the light beam is changed according to the principle of a periscope, so that one sensor can switch to monitor two positions, which can achieve low manufacturing cost and quick switching.

[0035] There are many different sizes of wafers in the semiconductor chip manufacturing process, and the wafer transfer equipment used to manufacture chips must also be able to accurately transfer wafers of various sizes.

[0036] Please refer to Figure 5 , Figure 5The figure is a schematic diagram of the detection optical path of the semiconductor wafer transmission accuracy monitoring device of the present invention when the wafer is 300 mm. Figure 5 As shown, when the wafer is 300 mm, the reflector in the second reflector group is vertical. Specifically, when the 300 mm wafer is transported, the rotatable reflector 6 is in an upright state, and the laser is normally irradiated to monitor the transport accuracy of the 300 mm wafer.

[0037] Please refer to Figure 6 , Figure 6 The figure is a schematic diagram of the detection optical path of the semiconductor wafer transmission accuracy monitoring device of the present invention when the wafer is 200 mm. Figure 6 As shown, when the 200mm wafer is transmitted, the cylinder 2 drives the connecting rod mechanism 3 to drive the rotatable reflector 6 to flip the angle, so that the light is irradiated onto the rotatable reflector 6 and then reflected onto the reflector 1, so that the light is irradiated on the 200mm wafer monitoring position to realize the monitoring of the 200mm wafer transmission accuracy.

[0038] Preferably, the entry angle flip can be 45 degrees.

[0039] It can be understood that the above embodiments only express the preferred implementation modes of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the patent scope of the present invention. It should be pointed out that, for ordinary technicians in this field, the above technical features can be freely combined without departing from the concept of the present invention, and several deformations and improvements can be made, which all belong to the protection scope of the present invention. Therefore, all equivalent changes and modifications made to the scope of the claims of the present invention should belong to the coverage of the claims of the present invention.

Claims

1. A semiconductor wafer transfer accuracy monitoring device, used for detecting wafer deviation on each surface of a vacuum transfer chamber, characterized in that: Three sensor installation positions are reserved on each surface of the vacuum transmission chamber, including two installation bases, a first reflection plate group consisting of three reflection plates, a second reflection plate group consisting of two reflection plates, a first AWC sensor, a second AWC sensor, a movable reflection plate and a rotating mechanism; the first AWC sensor and the second AWC sensor are installed on the first and last two installation bases of the three sensor installation positions through a mounting bracket, so that the first AWC sensor is installed on the first sensor installation position, and the second AWC sensor is installed on the third sensor installation position; wherein the first reflection plate group and the second reflection plate group are arranged opposite to each other, and the first reflection plate group is arranged opposite to the three sensor installation positions. The second reflection plate group and the movable reflection plate are installed on the sides of the three sensor installation positions; the movable reflection plate is located at the second sensor installation position, and the movable reflection plate is rotated 0 to 90 degrees under the drive of the rotation mechanism. The reflection plates in the second reflection plate group are installed to have the same rotation angle as the movable reflection plate, so that the light emitted by the first AWC sensor and the second AWC sensor is irradiated at the wafer monitoring position to adapt to the offset detection of wafers of different specifications and sizes transmitted to the vacuum transmission chamber; the rotation mechanism includes a cylinder and a connecting rod mechanism, the cylinder is arranged on the mounting base, and the connecting rod mechanism is respectively connected to the cylinder and the movable reflection plate, and is used to drive the movable reflection plate to rotate.

2. The semiconductor wafer transfer accuracy monitoring device according to claim 1, characterized in that: When the wafer is 300 mm, the reflective plate in the second reflective plate group is vertical.

3. The semiconductor wafer transfer accuracy monitoring device according to claim 1, characterized in that: When the wafer is 200 mm, the reflective plates in the second reflective plate group are rotated at an angle of 45 degrees.

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