Semiconductor quartz ring and method for manufacturing the same

Abstract

The application relates to the field of semiconductor devices, and particularly discloses a semiconductor quartz ring and a preparation method thereof. The preparation method comprises the following steps: rough machining a quartz blank by a machine tool to obtain a quartz ring initial product; ultrasonic cleaning the quartz ring initial product in a first alkaline cleaning agent and ultrasonic rinsing the quartz ring initial product with water; corroding the quartz ring initial product in a hydrofluoric acid solution and rinsing the quartz ring initial product; then immersing the quartz ring initial product in a second alkaline cleaning agent at 80-90 DEG C for 1.5-3 hours for high-temperature alkali cleaning, and ultrasonic rinsing the quartz ring initial product; repeatedly performing the ultrasonic cleaning step, and obtaining the semiconductor quartz ring with a surface roughness Ra>20 microns through ultrasonic rinsing and drying. The preparation method does not need manual sand blasting and finishing steps, and can ensure the consistency and uniformity of the surface quality of the quartz rings processed in the same batch.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor device processing, and more particularly to a semiconductor quartz ring and a preparation method thereof. BACKGROUND

[0002] Semiconductor quartz glass is an amorphous material of a single component of silicon dioxide, and its microstructure is a simple network composed of silicon dioxide tetrahedral structure units. Due to the large Si-O chemical bond energy and the tight structure, the quartz glass has excellent physical and chemical properties, and the comprehensive performance is the best among glass materials, and is called "glass king". Semiconductor quartz glass is mainly used for manufacturing semiconductor, electric light source, semiconductor communication device, laser, optical instrument, laboratory instrument, electrical equipment, medical equipment, and high-temperature-resistant and corrosion-resistant chemical instrument, chemical industry, electronics, metallurgy, building materials, and national defense industry, and is widely applied.

[0003] Quartz is a semiconductor auxiliary material worth paying attention to, and is widely used in wafer processing. Quartz glass is widely used in the manufacturing and processing of semiconductor chips due to its high purity, high temperature resistance, low thermal expansion, and strong chemical stability. The integrated circuit industry chain can be roughly divided into three main links of circuit design, chip manufacturing, and packaging testing. The processing of semiconductor products mainly includes chip manufacturing (front-end) and packaging (back-end) testing. The chip manufacturing process is complex and has many procedures, and various auxiliary quartz devices are used in the production process. Therefore, high-purity quartz material is a key auxiliary consumable widely used in the production process of semiconductor IC chips.

[0004] The quartz ring has high requirements for surface roughness in the application process. The higher the surface roughness of the quartz ring, the better the adsorption performance. At present, the common process for processing a quartz ring with a surface roughness Ra>20μin is as follows: quartz blank→machine rough machining (Ra is 14-18μin)→finishing (Ra is 7-8μin)→ultrasonic cleaning→sand blasting→ultrasonic cleaning→hydrofluoric acid washing→ultrasonic cleaning (Ra>20μin). In the above process, sand blasting process is used. Generally, in order to achieve a high-roughness surface effect, aluminum oxide, silicon carbide, quartz sand, and other sand materials less than 400 mesh are selected. However, the current sand blasting process is manual sand blasting. After different operators perform sand blasting processing, the uniformity of the rough surface of the quartz ring is poor, thereby affecting the surface performance of the product. For example, in the process of preparing a wafer, a quartz ring is used to adsorb the products (mainly oxides) in the reaction cavity for producing a wafer, so as to avoid the products from falling on the wafer surface, thereby causing the wafer to be unqualified. However, the quartz sand prepared by using the manual sand blasting process has poor uniformity of the rough surface, and the adsorption performance is uneven, so that the yield of the wafer prepared by using the quartz sand is low. SUMMARY

[0005] In order to improve the uniformity of the surface roughness of the quartz ring and improve the surface performance of the quartz ring, the application provides a preparation method of a semiconductor quartz ring, which does not need to use artificial sand blasting and can ensure the consistency and uniformity of the surface quality of the quartz rings processed in the same batch.

[0006] The application provides the technical scheme as follows:

[0007] A preparation method of a semiconductor quartz ring, comprising:

[0008] Rough machining of a quartz blank by a machine tool to obtain a quartz ring initial product;

[0009] Ultrasonic cleaning of the quartz ring initial product in a first alkaline cleaning agent, and ultrasonic rinsing with water;

[0010] Corrosion of the quartz ring initial product in a hydrofluoric acid solution, and rinsing;

[0011] The quartz ring initial product is placed in a second alkaline cleaning agent, soaked at 80-90°C for 1.5-3h for high-temperature alkali washing, and then ultrasonic rinsing;

[0012] The ultrasonic cleaning step is repeated again, and the semiconductor quartz ring with a surface roughness Ra>20μin is obtained after ultrasonic rinsing and drying.

[0013] Further, the first alkaline cleaning agent contains 5-10wt% of KOH or NaOH; and the second alkaline cleaning agent contains 10-15wt% of KOH or NaOH.

[0014] Further, the alkaline cleaning agent further contains an ionic surfactant and an amphoteric surfactant.

[0015] Further, the process parameters of the ultrasonic cleaning are as follows: ultrasonic cleaning at 50-60°C and an ultrasonic frequency of 30-50KHz for 3-7min, and then ultrasonic cleaning at 70-90KHz for 3-7min; the ultrasonic cleaning is performed 3-6 times.

[0016] Further, the process parameters of the ultrasonic rinsing are as follows: ultrasonic rinsing at 50-60°C and an ultrasonic frequency of 30-50KHz for 1-3min, and then ultrasonic rinsing at 70-90KHz for 1-3min; the ultrasonic rinsing is performed 3-6 times.

[0017] Further, the surface roughness Ra of the quartz ring initial product is 14-18μin.

[0018] Further, the rough machining step by the machine tool comprises:

[0019] The machine tool processes the quartz blank according to product design drawings, and process parameters are as follows: the grinding head is made of resin material, the granularity is 150-250 mesh, and the rotating speed is 3000-5000 rpm.

[0020] Further, the concentration of HF in the above hydrofluoric acid solution is 5-8 wt%, and the corrosion time is 5-8 min.

[0021] In the second aspect, the application further provides a semiconductor quartz ring prepared by the above preparation method, wherein the surface roughness Ra of the semiconductor quartz ring is 20-30 muin.

[0022] In summary, the application has the following beneficial effects:

[0023] The preparation method of the semiconductor quartz ring provided by the application adopts the process of quartz blank→machine tool rough machining→ultrasonic cleaning→hydrofluoric acid washing→high-temperature alkali washing→ultrasonic cleaning, combines machine tool processing and chemical surface treatment, replaces manual sand blasting by machine tool grinding head and chemical acid and alkali corrosion, and after machine tool rough machining, the product surface does not need to be polished by finishing, and directly performs hydrofluoric acid washing and high-temperature alkali washing immersion of greater than 80℃, and the surface roughness of the quartz ring is further chemically corroded by high-temperature alkali solution to improve the roughness after machine tool processing, so that the final product with a surface roughness Ra of 20-30 muin is obtained. Compared with the existing process, the method provided by the application can not only ensure the consistency and uniformity of the surface quality of the quartz rings processed in the same batch, but also simplify the operation steps and improve the processing efficiency of the product. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 is a comparison chart of the quartz ring before high-temperature alkali washing and after high-temperature alkali washing in Example 1 of the application;

[0025] Figure 2 is a measurement point position for detecting the surface roughness of the quartz ring in the embodiment of the application. DETAILED DESCRIPTION

[0026] The embodiments of the application will be described in detail below with reference to the examples, but those skilled in the art will understand that the following examples are only used to illustrate the application and should not be regarded as limiting the scope of the application. The specific conditions not mentioned in the examples are carried out according to the conventional conditions or the conditions recommended by the manufacturer, and the reagents or instruments not mentioned by the manufacturer are conventional products that can be purchased on the market.

[0027] The technical solution of the application is:

[0028] The application provides a preparation method of a semiconductor quartz ring, and the process flow is as follows:

[0029] Quartz blank→machine tool rough machining→ultrasonic cleaning→hydrofluoric acid washing→high-temperature alkali washing→ultrasonic cleaning

[0030] Specifically comprising the following steps:

[0031] (1) Rough machining of quartz blank by machine tool to obtain quartz ring initial product;

[0032] Further, the surface roughness Ra of the quartz ring initial product is 14-18μin, preferably 15-17μin, for example, it can be: 15.5μin, 16μin and 16.5μin.

[0033] Further, the step of rough machining by machine tool comprises: machining the quartz blank by machine tool according to product design drawing, and the process parameters are: the grinding head adopts resin material, the particle size is 150-250 mesh, and the rotating speed is 3000-5000rmp. Using this process parameter can directly increase the roughness to close to 20μin, which lays the foundation for subsequent high-temperature alkali washing.

[0034] Preferably, the grinding head with particle size less than 400 mesh is used to process the quartz ring shape; the particle size is preferably 180-230 mesh, and more preferably 200 mesh; and the processing rotating speed is preferably 3500-4500rmp, and more preferably 4000rmp.

[0035] (2) The quartz ring initial product is placed in the first alkaline cleaning agent for ultrasonic cleaning, and is ultrasonically rinsed with water; since the surface will be left with oil stains, metal impurities and other pollutants after machining by machine tool, the surface needs to be ultrasonically cleaned. In order to improve the cleaning efficiency and improve the cleanliness of the product after cleaning, ultrasonic treatment is needed during the cleaning process, and an alkaline cleaning agent is added.

[0036] The alkaline cleaning agent can be a decontamination product on the market with strong washing capacity and containing inorganic alkali. In the present embodiment, in order to further improve the cleaning effect, an alkaline cleaning agent (i.e. the first alkaline cleaning agent) containing 5-10wt% (preferably 6-9wt%) of KOH or NaOH is preferably used.

[0037] In order to better remove oil stains and improve the wettability of the alkaline cleaning agent to the surface of the quartz ring, the alkaline cleaning agent preferably further contains ionic surfactants and amphoteric surfactants. For example, it can be: sodium dodecyl benzene sulfonate, quaternary ammonium compound, lecithin, amino acid type surfactant, betaine type surfactant, etc.

[0038] Further, the process parameters of the ultrasonic cleaning are as follows: ultrasonic cleaning at a temperature of 50-60°C and an ultrasonic frequency of 30-50 KHz for 3-7 min, and then ultrasonic cleaning at a frequency of 70-90 KHz for 3-7 min; the ultrasonic cleaning is performed for 3-6 times. The ultrasonic cleaning at two different frequencies helps to remove impurities of different particle sizes in the processing process. Preferably, the process parameters of the ultrasonic cleaning are as follows: ultrasonic cleaning at a temperature of 52-58°C and an ultrasonic frequency of 35-45 KHz for 4-6 min, and then ultrasonic cleaning at a frequency of 75-85 KHz for 4-6 min; the ultrasonic cleaning is performed for 3-4 times.

[0039] Since the alkaline cleaning agent contains a surfactant, after the ultrasonic cleaning, it is difficult to completely remove the surfactant adhered to the quartz ring by using deionized water for rinsing, which is not conducive to the subsequent chemical etching process. Therefore, the ultrasonic rinsing in water is preferably used in the present embodiment, and the process parameters of the ultrasonic rinsing are as follows: ultrasonic rinsing at a temperature of 50-60°C and an ultrasonic frequency of 30-50 KHz for 1-3 min, and then ultrasonic rinsing at a frequency of 70-90 KHz for 1-3 min; the ultrasonic rinsing is performed for 3-6 times. Preferably, the process parameters of the ultrasonic rinsing are as follows: ultrasonic rinsing at a temperature of 52-58°C and an ultrasonic frequency of 35-45 KHz for 1-3 min, and then ultrasonic rinsing at a frequency of 75-85 KHz for 1-3 min; the ultrasonic rinsing is performed for 3-4 times.

[0040] (3) placing the quartz ring in a hydrofluoric acid solution for etching, and rinsing;

[0041] In this step, a low-concentration hydrofluoric acid solution is used to etch the surface, and the surface of the quartz ring obtained after rough machining of a machine tool is pretreated. Preferably, the concentration of HF in the hydrofluoric acid solution is 5-8 wt%, and the etching time is 5-8 min. More preferably, the concentration of HF in the hydrofluoric acid solution is 6-7 wt%, and the etching time is 6-7 min.

[0042] (4) placing the quartz ring in a second alkaline cleaning agent, and performing high-temperature alkali cleaning at 80-90°C for 1.5-3 h, and then performing ultrasonic rinsing;

[0043] After the pickling, acid stains and a small amount of quartz powder are left on the surface of the product, the residual acid is neutralized by using high-temperature alkali cleaning, and the surface roughness of the product is further improved by high-temperature alkali etching. The detailed parameters are as follows: an alkaline cleaning agent (i.e., the second alkaline cleaning agent, which can also contain a surfactant) containing 10-15 wt% of KOH or NaOH is used, the temperature is 80-90°C (preferably 82-88°C), the alkali cleaning time is 1.5-3 h (preferably 1.5-2 h), and then deionized water is used for ultrasonic rinsing for at least three times. The parameters of the ultrasonic rinsing can be as described in step (2).

[0044] (5) Repeat the ultrasonic cleaning step again, and after ultrasonic rinsing and drying, a semiconductor quartz ring with a surface roughness Ra>20μin is obtained.

[0045] The high-temperature alkali washing only neutralizes the hydrofluoric acid and increases the surface roughness, and the removal effect of the residual quartz powder on the surface is not ideal, and the quartz ring surface needs to be further ultrasonically cleaned and ultrasonically rinsed, and the specific parameter selection can be consistent with step (2).

[0046] The specific embodiments of the present application are described in detail below. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0047] Example 1

[0048] The present embodiment provides a semiconductor quartz ring, and a preparation method thereof comprises:

[0049] (1) Machine tool rough machining

[0050] The machine tool processes all the shapes according to the product drawing, and the size meets the drawing requirements. The main machining parameters are: the grinding head is made of resin material, the particle size is 200 mesh, and the machining speed is 4000 revolutions / min. The surface roughness after machining is Ra: 16μin.

[0051] (2) Ultrasonic cleaning

[0052] An alkaline cleaning agent containing 8wt% KOH (containing a surfactant) is prepared, and ultrasonic cleaning is carried out at a temperature of 55°C, ultrasonic frequency 40KHz, 5min, 80KHz, 5min, and then ultrasonic rinsing with deionized water four times, temperature 55°C, ultrasonic frequency 40KHz, 2min, 80KHz, 2min.

[0053] (3) Hydrofluoric acid washing

[0054] A low-concentration hydrofluoric acid is used to etch the surface to pretreat the surface after machining by the machine tool. The hydrofluoric acid is prepared as follows: HF content 7wt%, etching time 6min. During the pickling process, the product is kept up and down, and after pickling, it is quickly put into deionized water for rinsing 3 times, each time keeping the product up and down for 30-60s, and the product is not dried, but kept in a wet state.

[0055] (4) High-temperature alkali washing

[0056] An alkaline cleaning agent containing 13wt% KOH (containing a surfactant) is prepared, and soaking is carried out at a temperature of 80°C, alkali washing time 1.5h, and then ultrasonic rinsing with deionized water four times. The product is not dried, and the whole process is kept in a wet state.

[0057] Among them,Figure 1 The contrast of the quartz ring before and after high-temperature alkali washing is shown in the following figure: Figure 1 It can be seen that there is a very obvious difference between the quartz ring before and after high-temperature alkali washing, which is transparent before alkali washing and matt white after alkali washing.

[0058] (5) Ultrasonic cleaning

[0059] Synchronously with step 2, the product obtained after ultrasonic rinsing is finally dried at a temperature of 100°C for 10 min to obtain the final product.

[0060] Example 2

[0061] The present embodiment provides a semiconductor quartz ring, and a preparation method thereof comprises the following steps:

[0062] (1) Machine tool rough machining

[0063] The machine tool processes all the shapes according to the product drawing, and the size meets the drawing requirements. The main machine processing parameters are as follows: the grinding head is made of resin material, the particle size is 200 mesh, and the processing speed is 4000 revolutions / min. After processing, the surface roughness is Ra: 14μin.

[0064] (2) Ultrasonic cleaning

[0065] After machine tool processing, the surface will be contaminated by oil stains, metal impurities and other pollutants, and the surface needs to be ultrasonically cleaned: an alkaline cleaning agent containing 5wt% KOH (containing a surfactant) is prepared, and ultrasonic cleaning is performed at a temperature of 60°C, with an ultrasonic frequency of 30KHz for 7min and 70KHz for 7min. Then, deionized water is used for ultrasonic rinsing three times at a temperature of 60°C, with an ultrasonic frequency of 30KHz for 3min and 70KHz for 3min.

[0066] (3) Hydrofluoric acid washing

[0067] Low-concentration hydrofluoric acid is used to corrode the surface for pretreatment of the surface after machine tool processing. The hydrofluoric acid is prepared as follows: the HF content is 5wt%, and the corrosion time is 8min. During the acid washing process, the product is kept shaking up and down. After acid washing, the product is quickly rinsed in deionized water for 2 times, each time keeping the product shaking up and down for 30-60s. The product is not dried, but kept in a wet state.

[0068] (4) High-temperature alkali washing: consistent with example 1

[0069] (5) Ultrasonic cleaning: synchronous with step 2, the product obtained after ultrasonic rinsing is finally dried at a temperature of 100°C for 10 min to obtain the final product.

[0070] Example 3

[0071] The present embodiment provides a semiconductor quartz ring, and a preparation method thereof comprises the following steps:

[0072] (1) Machine tool rough machining

[0073] The machine tool processes all the shapes according to the product drawing, and the size meets the drawing requirements. The main machining parameters are as follows: the grinding head is made of resin material with a particle size of 200 mesh, and the machining speed is 4000 rpm. The surface roughness after machining is Ra: 14-18 μin.

[0074] (2) Ultrasonic cleaning

[0075] After machining, the surface of the machine tool will be contaminated with oil stains, metal impurities, etc. The surface needs to be ultrasonically cleaned: prepare an alkaline cleaning agent containing 5-10 wt% KOH (containing a surfactant), ultrasonically clean at a temperature of 50-60°C, ultrasonic frequency 40 kHz, 5 min, 80 kHz, 5 min, then ultrasonically rinse with deionized water for at least three times, temperature 50-60°C, ultrasonic frequency 40 kHz, 2 min, 80 kHz, 2 min.

[0076] (3) Hydrofluoric acid washing

[0077] A low concentration of hydrofluoric acid is used to etch the surface and pretreat the surface after machining. The hydrofluoric acid is prepared as follows: HF content 5-8 wt%, etching time 5-8 min. During the pickling process, the product is kept moving up and down. After pickling, the product is quickly rinsed in deionized water for at least 2 times, each time keeping the product moving up and down for 30-60 s. The product is not dried and is kept moist.

[0078] (4) High temperature alkaline washing: consistent with Example 1

[0079] (5) Ultrasonic cleaning: as in Step 2, the product obtained after ultrasonic rinsing is dried at 100°C for 10 min to obtain the final product.

[0080] Example 4

[0081] In this example, orthogonal experiments are used to investigate the effects of alkaline washing temperature and time on the final product in the high temperature alkaline washing step. Except for the high temperature alkaline washing step, the other steps are consistent with Example 1.

[0082] High temperature alkaline washing:

[0083] Prepare an alkaline cleaning agent containing 13 wt% KOH (containing a surfactant), and perform high temperature alkaline washing according to the alkaline washing time and temperature in Table 1, and then ultrasonically rinse with deionized water for four times.

[0084] Measure and record the surface roughness and surface whitening of the quartz ring product under each condition, and the results are shown in Table 1:

[0085] Table 1. Orthogonal experiment parameters and results in Example 4

[0086]

[0087] As shown in Table 1, when the alkaline cleaning agent containing 13wt% of KOH is used, the whitening degree of the surface of the quartz ring product is qualified at a temperature of 80-90°C and soaking for 90-150min, and the corresponding surface roughness is greater than 20μin. When the temperature and time are less than the above range, the whitening degree of the product surface is insufficient, and the corresponding surface roughness does not meet the requirements; when the temperature and time are greater than the above range, the roughness and whitening degree can meet the requirements, but the production cost will increase significantly, and the high temperature will increase the difficulty of operation of the employees.

[0088] Example 5

[0089] In this group of examples, the effect of the concentration of alkaline substances in the alkaline cleaning agent in the high-temperature alkali washing step on the surface roughness of the final product is investigated. Except for the high-temperature alkali washing step, the other steps are consistent with Example 1.

[0090] High-temperature alkali washing:

[0091] The alkaline cleaning agent shown in Table 2 is prepared, soaked at a temperature of 80°C for 1.5h, and then rinsed with deionized water for four times by ultrasonic.

[0092] The surface roughness and surface whitening of the quartz ring product under each condition are measured and recorded, and the results are shown in Table 1:

[0093] Table 2. Investigation results of alkaline substances in alkaline cleaning agent

[0094]

[0095]

[0096] As shown in Table 2:

[0097] For alkaline substances, compared with organic base ammonia water, inorganic bases KOH and NaOH are used for high-temperature alkali washing, which has good corrosion effect on the surface of the quartz ring, and compared with KOH, NaOH has better effect.

[0098] For the concentration of KOH, when the same conditions are used for high-temperature alkali washing, the corrosion effect is good when the concentration of KOH in the alkaline cleaning agent is in the range of 10-15wt%, and when the concentration is lower than the range, the corrosion effect is poor, and the roughness and whitening degree of the product cannot meet the requirements; when the concentration exceeds the range, the requirements can be met but the production and operation cost will increase.

[0099] Comparative Example 1

[0100] In this comparative example, the quartz ring is prepared by using the traditional manual sandblasting process, and the process flow is as follows:

[0101] Quartz blank → machine tool rough machining → finishing → ultrasonic cleaning → manual sand blasting → ultrasonic cleaning → hydrofluoric acid cleaning → ultrasonic cleaning; the remaining steps are consistent with example 1 except for the finishing and sand blasting steps:

[0102] (3) Finishing

[0103] Machine tool finishing: the machine tool processes all the shapes according to the product drawing, and the size meets the drawing requirements. The main machining parameters are: the grinding head uses resin material, particle size 400 mesh, and the machining speed is 7500 rpm, and the surface roughness after machining is Ra: 5-7 μin;

[0104] (5) Manual sand blasting

[0105] Sand blasting is manually performed by placing the product on the sand blasting machine workbench, using 600 mesh silicon carbide abrasive as sand blasting auxiliary material, the nozzle is 10-20 cm away from the product during sand blasting, and the product is sprayed up and down along the shape. After the front is sprayed, the product is turned over and the above operation is repeated for sand blasting. Manual sand blasting requires high skill of the employees, and the difference between skilled workers and novices will be very obvious.

[0106] The surface roughness of the quartz rings prepared in Comparative Example 1 and Example 1 was measured by a roughness measuring instrument, and the measurement point diagram is shown in Figure 2 , and the results are shown in Table 3:

[0107] Table 3. Surface roughness measurement results

[0108]

[0109]

[0110] As can be seen from Table 3, compared with the manual sand blasting process of Comparative Example 1, the surface roughness of the quartz ring obtained by the process provided by Example 1 of the present application using high-temperature alkali washing and without finishing is more uniform and consistent.

[0111] This specific embodiment is only an explanation of the present application, and is not a limitation of the present application. Those skilled in the art can make modifications to this embodiment without creative contribution after reading this specification, but as long as it is within the scope of the claims of the present application, it is protected by the patent law.

Claims

1. A method of producing a semiconductor quartz ring, characterized by, The application relates to a method for processing a semiconductor quartz ring. The quartz blank is subjected to machine rough machining to obtain a quartz ring initial product with a surface roughness Ra of 14-18 muin; The quartz ring initial product is subjected to ultrasonic cleaning in a first alkaline cleaning agent and ultrasonic rinsing with water; The quartz ring initial product is subjected to corrosion in a hydrofluoric acid solution with a concentration of 5-8 wt% for 5-8 min and rinsing; The quartz ring initial product is again subjected to high-temperature alkali cleaning in a second alkaline cleaning agent containing 10-15 wt% of KOH or NaOH at 80-90 DEG C for 1.5-3 h, ultrasonic rinsing, and drying to obtain a semiconductor quartz ring with a surface roughness Ra of 20-30 muin. The first alkaline cleaning agent contains 5-10 wt% of KOH or NaOH.

2. The method of producing a semiconductor quartz ring according to claim 1, wherein The ultrasonic cleaning process parameters are as follows: ultrasonic cleaning at 50-60 DEG C and an ultrasonic frequency of 30-50 KHz for 3-7 min, and then ultrasonic cleaning at 70-90 KHz for 3-7 min; the ultrasonic cleaning is repeated for 3-6 times.

3. The method of claim 1, wherein the semiconductor quartz ring is prepared by the steps of: The ultrasonic rinsing process parameters are as follows: ultrasonic rinsing at 50-60 DEG C and an ultrasonic frequency of 30-50 KHz for 1-3 min, and then ultrasonic rinsing at 70-90 KHz for 1-3 min; the ultrasonic rinsing is repeated for 3-6 times. ​ 4. The method of claim 1, wherein the semiconductor quartz ring is prepared by the steps of: The machine rough machining step comprises the following steps: ​ 5. The method of claim 1, wherein the semiconductor quartz ring is prepared by the steps of: The machine rough machining step comprises the following steps: ​ The machine rough machining step comprises the following steps:

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