Wafer water bath quick discharge groove structure and wafer cleaning equipment

Abstract

The present application relates to wafer cleaning technical field, specifically, it is a kind of wafer water bath quick drainage groove structure and wafer cleaning equipment, including main groove body, water bath groove body and acoustic wave vibration component;The main groove body is placed in the water bath groove body, the inside of the water bath groove body is provided with the placement platform for placing wafer, DIW spray mechanism, bubbling mechanism, water resistance detection device are further provided on the water bath groove body, the water bath groove body is further provided with several drain pipes, and the drain port of the drain pipe is connected with quick drain valve;The inside of the water bath groove body is provided with acoustic wave vibration component, and the acoustic wave vibration component is correspondingly arranged with the main groove body, and the acoustic wave energy of the acoustic wave vibration component can be transmitted to the wafer surface through water bath;It can be aimed at wafer QDR cleaning process, improve the ability of wafer surface particles that can be removed in DI water cleaning link, improve cleaning efficiency, and then improve product yield.

Description

Technical Field

[0001] This invention relates to the field of wafer cleaning technology, and more specifically, to a wafer water bath quick-drainage tank structure and wafer cleaning equipment. Background Technology

[0002] In the chip manufacturing process, wafer cleaning is applied to every step, among which DI water cleaning is particularly important (DI water, English is deionized water, abbreviated as DIW). In actual production, it is not only necessary to improve the efficiency of a single cleaning, but also to frequently clean before and after almost all processes. The cleaning step accounts for more than 30% of the overall steps.

[0003] The criticality of cleaning stems from the fact that as feature sizes continue to shrink, semiconductors become increasingly sensitive to impurities. Semiconductor manufacturing processes inevitably introduce contaminants such as particles, organic matter, metals, and oxides. To minimize the impact of impurities on chip yield, cleaning is required after each process stage to remove residual particles, organic matter, metals, and oxides from the previous step.

[0004] In chip cleaning processes, wet cleaning is the most commonly used method. Within wet cleaning, tank cleaning is the primary method, typically combining chemical solution immersion with a QDR (Quick Drain) cleaning tank. As chip manufacturing processes have progressed to 28nm, 14nm, and more advanced stages, the process flow has become increasingly complex, leading to a decrease in yield. One reason for this is that advanced processes are more sensitive to impurities, making efficient cleaning of small-sized contaminants more difficult. Summary of the Invention

[0005] The purpose of this invention is to provide a wafer water bath quick-drainage tank structure, which can improve the ability to remove wafer surface particles in the DI water cleaning process for wafer QDR cleaning, improve cleaning efficiency, and thus improve product yield.

[0006] Another objective of this invention is to provide a wafer cleaning apparatus that can improve the ability to remove wafer surface particles in the DI water cleaning step of the wafer QDR cleaning process, thereby improving cleaning efficiency and product yield.

[0007] The technical solution of this invention is implemented as follows:

[0008] A wafer water bath quick-drainage tank structure includes a main tank body, a water bath tank body, and an acoustic vibration component;

[0009] The main tank is placed inside the water bath tank. The inside of the water bath tank is provided with a placement platform for placing wafers. The water bath tank is also provided with a DIW spray mechanism, a bubbling mechanism, and a water resistance detection device. The water bath tank is also provided with several drain pipes, and the drain ports of the drain pipes are connected to quick-drain valves.

[0010] The water bath is equipped with an acoustic vibration component, which is correspondingly arranged with the main tank. The acoustic energy of the acoustic vibration component can be transmitted to the wafer surface through the water bath.

[0011] Furthermore, the interior of the water bath tank is provided with a plurality of first support blocks for jointly supporting the main tank, and the top surfaces of all the first support blocks are on the same horizontal plane.

[0012] The acoustic vibration assembly includes an acoustic vibration plate and a generator connected together, wherein the acoustic vibration plate is disposed directly below the main tank, and the bottom plate of the main tank is inclined.

[0013] Furthermore, a number of second support blocks are provided at the bottom of the main tank body to jointly support the placement platform, and the placement platform is located at the center of the main tank body;

[0014] The bubbling mechanism includes a bubbling tube located at the bottom of the main tank and directly below the placement platform, with both ends of the bubbling tube connected to a nitrogen source or an inert gas source, respectively.

[0015] Furthermore, the bubbling mechanism also includes two bubbling tube fixing blocks, which are respectively installed at the two corners of the upper edge of the main tank. The two ends of the bubbling tube are led out from the bottom corner of the main tank and fixed by the bubbling tube fixing blocks.

[0016] Furthermore, the main tank body includes a main tank bottom plate, a main tank left side plate, a main tank right side plate, a main tank front side plate, and a main tank rear side plate;

[0017] The DIW spray mechanism includes a DIW spray pipe and pipe clamps. Pipe clamps are respectively provided on the top of the left side plate and the right side plate of the main tank. The pipe clamps are provided with slots, and the DIW spray pipes are installed in the slots. The DIW spray pipes are connected to the liquid supply pipeline, and several spray heads are provided on the DIW spray pipes.

[0018] Furthermore, multiple V-shaped overflow ports are sequentially opened on the top of the front side plate and the rear side plate of the main tank.

[0019] Furthermore, the DIW spray pipe is rotatably connected to the slot to adjust the spray angle of the spray head.

[0020] Furthermore, it also includes a DIW injection pipe, which is located in the lower part of the main tank body. The DIW injection pipe is connected to the liquid supply pipeline, and an injection hole is provided on the DIW injection pipe.

[0021] Furthermore, the drain pipe passes through the bottom of the water bath tank, and a sealing gasket is provided at the connection between the drain pipe and the water bath tank.

[0022] A wafer cleaning device includes the aforementioned wafer water bath quick-drainage tank structure.

[0023] Compared with the prior art, the beneficial effects of the present invention are:

[0024] This application provides a wafer water bath rapid discharge tank structure, which incorporates an acoustic vibration component and provides acoustic vibration cleaning functionality (megason or ultrasonic). It represents a technological upgrade and functional enhancement for the wafer QDR cleaning process. Building upon the standard QDR cleaning process's DIW injection, DIW spraying, inert gas bubbling, and rapid discharge functions, this application adds an acoustic vibration component and transmits acoustic energy to the main tank via a water bath. This improves the ability to remove wafer surface particles during the DI water cleaning process, increasing cleaning efficiency and achieving better cleaning results, thereby improving product yield. This expands the application possibilities of the wafer water bath rapid discharge tank structure described in this application.

[0025] Furthermore, when water needs to be changed during wafer cleaning, opening the quick-drain valve allows for rapid discharge of the medium from the main tank. This rapid discharge reduces the thickness of the boundary layer on the wafer surface and removes contaminants, resulting in better cleaning. Simultaneously, rapid drainage saves process time, shortens the cycle time, and improves cleaning efficiency. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a cross-sectional view of the wafer water bath quick-release groove structure of the present invention;

[0028] Figure 2 This is a top view of the wafer water bath quick-drainage tank structure of the present invention;

[0029] Figure 3This is a top view of the main tank of the wafer water bath quick-drainage tank structure of the present invention;

[0030] Figure 4 This is a cross-sectional view of the main tank body of the wafer water bath quick-drainage tank structure of the present invention;

[0031] Figure 5 This is a top view of the water bath body of the wafer water bath quick-release tank structure of the present invention;

[0032] Figure 6 This is a cross-sectional view of the water bath body of the wafer water bath quick-release tank structure of the present invention;

[0033] Figure 7 This is a front sectional view of the water bath body of the wafer water bath quick-drainage tank structure of the present invention;

[0034] Figure 8 This is a perspective view of the main tank and its components of the present invention;

[0035] Figure 9 This is a top axonometric view of the wafer water bath quick-release trench structure of the present invention;

[0036] Figure 10 This is a bottom-view axonometric drawing of the water bath tank of the present invention;

[0037] Figure 11 This is a top axonometric view of the water bath tank of the present invention;

[0038] Figure 12 This is a second structural diagram showing the replacement arrangement of the drainage pipe in the wafer water bath quick-drainage tank structure of the present invention.

[0039] Figure 13 This is a third structural diagram showing the replacement arrangement of the drainage pipe in the wafer water bath quick-drainage tank structure of the present invention.

[0040] Figure 14 This is a fourth structural diagram showing the replacement arrangement of the drainage pipe in the wafer water bath quick-drainage tank structure of the present invention.

[0041] In the picture:

[0042] 101-Main tank body; 102-DIW injection pipe; 103-DIW spray pipe; 104-Bubble pipe; 105-Drain pipe; 106-Water resistivity detection device; 107-Placement platform; 108-Bubble pipe fixing block; 109-Pipe clamp; 110-Second support block; 111-Mounting flange; 112-V-type overflow port;

[0043] 2-Water bath tank; 201-Base plate; 202-Left side plate; 203-Front side plate; 204-Right side plate; 205-Quick exhaust valve mounting seat; 206-First support block; 207-Rear side plate;

[0044] 3-Acoustic vibration assembly; 301-Acoustic vibrating plate; 302-Generator;

[0045] 4-Wafer; 5-Quick exhaust valve; 6-Sealing gasket. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0047] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0048] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0049] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this invention is in use. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention. In addition, the terms "first," "second," "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0050] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0051] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0052] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0053] Example 1

[0054] Reference Figures 1-14 This embodiment provides a wafer water bath quick-drainage tank structure, which includes a main tank body 101, a water bath tank body 2, and an acoustic vibration component 3.

[0055] The main tank 101 is placed inside the water bath tank 2. The interior of the water bath tank 2 is provided with a placement platform 107 for placing wafers 4. The size of the placement platform 107 can be increased or decreased according to the size of the wafers 4 to be cleaned, so as to accommodate more specifications of wafer 4 cleaning processes. The water bath tank 2 is also provided with a DIW spray mechanism, a bubbling mechanism, and a water resistivity detection mechanism. The water bath tank 2 is also provided with several drain pipes 105, and the drain ports of the drain pipes 105 are connected to quick-drain valves 5.

[0056] The water bath 2 is equipped with an acoustic vibration component 3, which is correspondingly arranged with the main tank 101. The acoustic energy of the acoustic vibration component 3 can be transmitted to the surface of the wafer 4 through the water bath.

[0057] In use, the openings of the water bath tank 2 and the main tank 101 both face upwards. The water bath tank 2 includes a bottom plate 201, a left side plate 202, a right side plate 204, a front side plate 203, and a rear side plate 207. The main tank 101 includes a main tank bottom plate, a main tank left side plate, a main tank right side plate, a main tank front side plate, and a main tank rear side plate. The main tank left side plate and the left side plate 202 are on the same side, and the main tank right side plate and the right side plate 204 are on the same side. Similarly, the main tank front side plate and the front side plate 203 are on the same side, and the main tank rear side plate and the rear side plate 207 are on the same side. The direction from the main tank front side plate to the main tank rear side plate is considered rearward, the direction from the main tank rear side plate to the main tank front side plate is considered forward, the direction from the main tank left side plate to the main tank right side plate is considered rightward, and the direction from the main tank right side plate to the main tank left side plate is considered leftward.

[0058] This application, in addition to having the functions of DIW injection, DIW spraying, bubbling, and rapid discharge in the QDR cleaning process, also integrates an acoustic vibration component 3, and transmits acoustic energy to the main tank 101 through a water bath, acting on the surface of the wafer 4 to improve the cleaning effect.

[0059] The water bath 2 has several first support blocks 206 inside, which together support the main tank 101. The top surfaces of all the first support blocks 206 are at the same horizontal plane to ensure that the main tank 101 is placed horizontally on it. Preferably, there are four sets of first support blocks 206, which support the four support legs of the main tank 101 and support the main structure of the main tank 101. Since the bottom of the water bath 2 is inclined and the top surfaces of all the first support blocks 206 are at the same horizontal plane, the height of each first support block 206 can be different, as long as their top surfaces are at the same horizontal plane.

[0060] The acoustic vibration assembly 3 includes an acoustic vibrating plate 301 and a generator 302 connected to each other. The acoustic vibrating plate 301 is disposed directly below the main tank 101, and the bottom plate of the main tank 101 is inclined to facilitate the transmission of acoustic energy of the acoustic vibration assembly 3 and the discharge of bubbles generated by the cavitation effect. The bottom plate of the main tank 101 is inclined at a small angle; preferably, the angle between the bottom plate of the main tank 101 and the horizontal plane is 0 to 20°, for example, 9°, 10°, 11°, or 12°.

[0061] The acoustic wave plate 301 can be either a megophonic plate (megophonic box) or an ultrasonic plate (ultrasonic box), and the generator 302 can be set in any position.

[0062] The bottom of the main tank 101 is further provided with several second support blocks 110 for jointly supporting the placement platform 107. Preferably, after the placement platform 107 is placed on the second support blocks 110, the placement platform 107 is located at the center of the main tank 101. Preferably, the placement platform 107 is connected and fixed to the second support blocks 110 by screws.

[0063] The bubbling mechanism includes a bubbling tube 104, which is located at the bottom of the main tank 101 and directly below the placement platform 107. Both ends of the bubbling tube 104 are connected to a nitrogen source or an inert gas source, respectively.

[0064] The bubbling tube 104 is preferably a "nitrogen bubbling tube" made of a U-shaped PFA tube disc. Small holes are opened on the bubbling tube 104 and connected to a gas source. Nitrogen or inert gas is introduced into the tube to bubble the water or medicine in the main tank.

[0065] The bubbling mechanism also includes two bubbling tube fixing blocks 108. The two bubbling tube fixing blocks 108 are respectively installed at the two corners of the upper edge of the main tank 101 (i.e., the two corners of the upper part of the rear side plate of the main tank), and the bubbling tube fixing blocks 108 are fixed to the main tank 101 by means of screw tightening. The two ends of the bubbling tube 104 are respectively led out from the bottom corner of the main tank 101 and extended upwards and are respectively fixed by the two bubbling tube fixing blocks 108. The two ends of the bubbling tube 104 are then connected to the air source.

[0066] The DIW spray mechanism includes a DIW spray pipe 103 and pipe clamps 109. Pipe clamps 109 are respectively provided on the top of the left side plate and the right side plate of the main tank (at least two pipe clamps 109 are provided on each side). The pipe clamps 109 are provided with slots, and the DIW spray pipe 103 is installed in the slots. The DIW spray pipe 103 is connected to the liquid supply pipeline, and a plurality of spray heads are provided on the DIW spray pipe 103. The plurality of spray heads are evenly distributed along the axial direction of the DIW spray pipe 103.

[0067] The top of the front and rear side plates of the main tank are each provided with multiple V-shaped overflow ports 112 along their length, which facilitates the overflow of DIW and removes floating debris generated during the cleaning process. It should be noted that the DIW medium in the main tank 101 overflows into the water bath 2. Since the medium in the water bath 2 only transmits ultrasonic energy, this does not adversely affect the cleaning effect. Furthermore, the water bath 2 can also discharge floating debris flowing into the main tank 101 into the wafer cleaning equipment by over-injecting DIW, thus ensuring the cleanliness of the medium in the water bath 2.

[0068] After the DIW spray pipe 103 is installed on the pipe clamp 109, it is then connected to the main tank 101 with screws. The DIW spray pipe 103 and the pipe clamp 109 are rotatably connected to adjust the spray angle of the spray head to correspond to various positions on the wafer 4.

[0069] The DIW injection pipe 102 is located in the lower part of the main tank 101. The DIW injection pipe 102 is connected to the liquid supply pipeline, and an injection hole is provided on the DIW injection pipe 102.

[0070] Preferably, the bottom of the DIW injection tube 102 is provided with a plurality of injection holes in sequence along its axial direction, and the injection holes are evenly distributed to ensure uniform and smooth injection.

[0071] The main tank 101 is preferably made of quartz, and the medium used inside is generally DIW, although a low-concentration SC1 solution may be used occasionally. The water bath 2 is preferably made of NPP or PVC, and the medium used inside is DIW for the transmission of acoustic energy. The acoustic wave plate 301 is installed on the bottom plate 201 of the water bath 2 and fixed directly below the main tank 101. The mega-sonic or ultrasonic generator 302 can be installed anywhere in the wafer cleaning equipment, preferably in the electrical area. The wafer 4 to be cleaned is placed on the placement platform 107, which is equivalent to placing it in the center of the main tank 101.

[0072] The diagram shows that the megaacoustic or ultrasonic vibrating plate is installed using a flange mounting method. An immersion-type vibrating box method can also be used, as long as the vibrating plate is directly below the main tank 101, meaning the megaacoustic or ultrasonic vibrating plate is directly below the wafer 4 to be cleaned. Note that for ultrasonic cleaning, the ultrasonic power must meet the power density requirements to achieve the cleaning effect; megaacoustic cleaning is not affected by power density. It is important to note that when using a megaacoustic vibrating plate, the high frequency characteristics and acoustic wave flow effectively reduce the thickness of the adhesive interfacial water layer during the cleaning process, significantly improving the removal of particles, especially small particles, and effectively enhancing the cleaning effect. When using an ultrasonic vibrating plate, due to cavitation, the impact force generated when the cavitation bubbles collapse can better peel off particles adhering to the surface of wafer 4, effectively removing dirt from the crevices on the wafer 4 surface.

[0073] The main tank 101 integrates DIW spraying, nitrogen or inert gas bubbling, and water resistivity detection functions. The three sets of functional modules described can be freely selected to be turned on or off according to process requirements, or the presence or absence of this functional module can be chosen freely.

[0074] The drain pipe 105 passes through the bottom of the water bath tank 2, and a sealing gasket 6 is provided at the connection between the drain pipe 105 and the water bath tank 2. Preferably, a drain hole is provided at the connection between the drain pipe 105 and the water bath tank 2, and an installation flange 111 is installed in the drain hole. The installation flange 111 is fixed to the bottom plate 201 of the water bath tank with screws, and a sealing gasket 6 is installed between them to ensure physical isolation of the media in the water bath tank 2 and the main tank 101. The sealing gasket 6 can achieve a good sealing effect, ensuring that the media in the water bath tank 2 will not flow back into the main tank 101 and will not cause cross-contamination. The sealing gasket 6 can be made of rubber, such as EPDM rubber or FKM rubber.

[0075] The drain pipe 105 passes through the mounting flange 111 and the sealing gasket 6. The quick-drain valve mounting base 205 is installed at the bottom of the water bath tank 2 and concentrically with the drain hole. The quick-drain valve 5 is installed inside the quick-drain valve mounting base 205 in the water bath tank 2. The drainage from the drain pipe 105 can be controlled by opening and closing the quick-drain valve 5. When water needs to be changed during the wafer 4 cleaning process, opening the quick-drain valve 5 allows for rapid discharge of the medium from the main tank 101. During rapid discharge, the water flow velocity reduces the thickness of the boundary layer on the wafer 4 surface and carries away contaminants adhering to the wafer 4 surface, achieving a better cleaning effect. Simultaneously, rapid drainage saves process time, shortens the process cycle, and improves cleaning efficiency.

[0076] The DIW injection pipe 102, drain pipe 105, second support block 110, and mounting flange 111 are all made of quartz material, which is the same material as the main tank 101, and they form an integral structure with the main tank 101.

[0077] The water resistivity detection device 106 is installed on the side wall of the main tank 101 by clamping, and is detachable. The water resistivity detection device 106 is prior art and will not be described in detail here.

[0078] It should also be noted that the parts in direct contact with wafer 4 in this application are mainly made of quartz, PTFE or PFA, but mainly quartz (preferred) and supplemented by PFA and PTFE. The energy generated by the megasonic or ultrasonic oscillating plate is transferred to the surface of wafer 4 through a water bath. The metal materials used in the megasonic or ultrasonic oscillating plate do not come into direct or indirect contact with wafer 4, thus avoiding the possibility of metal contamination during chip cleaning.

[0079] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and substitutions can be made without departing from the technical principles of the present invention, and these improvements and substitutions should also be included in the protection scope of the present invention.

[0080] For example: 1. The drain pipes 105 of the quick-drainage trough structure can be distributed in any direction of the trough (i.e., when one drain pipe 105 is installed), or they can be distributed in any two directions simultaneously (i.e., when two drain pipes 105 are installed), as shown in the attached figure. Figures 12-14 The following are some of the arrangement methods provided; please note: when there are two or more drain pipes 105, the number of drain outlets, mounting flanges 111, sealing gaskets 6, quick-drain valves 5, and quick-drain valve mounting seats 205 should be increased accordingly.

[0081] 2. The DIW spray, inert gas bubbling, and water resistivity detector modules can be installed in various ways and directions.

[0082] 3. This application, taking into account cleanliness and metal contamination, selected quartz as the main material for the tank body 101. However, this does not mean that only quartz can be used. When cleanliness and metal index requirements are not high, and the internal environment of the wafer cleaning equipment is not acidic or alkaline, stainless steel can also be used as the main material. When using a similar structure, the cleaning effect of this invention can be achieved, and this situation should also be included in the scope of protection of this invention.

[0083] 4. In addition to the flange installation method described in this article, the megaphonic and ultrasonic transducers can also be installed using other methods such as submersion installation. As long as the transducer is installed directly below the main tank 101, it is acceptable.

[0084] 5. In addition to the shape and structure shown in the figure, the placement platform 107 can be designed into many shapes, but no matter what shape it is, it cannot change its essential nature of supporting the wafer 4 to be cleaned.

[0085] Example 2

[0086] This embodiment provides a wafer cleaning device, including the wafer water bath quick-drain structure described in Embodiment 1, wherein the generator 302 of the acoustic vibration component 3 is located in the electrical area. The wafer water bath quick-drain structure designed in this invention integrates mega-sound or ultrasonic cleaning functions into a conventional QDR cleaning tank, which is of great significance for reducing process steps, improving cleaning efficiency, and increasing product yield.

[0087] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

[0088] Furthermore, those skilled in the art will understand that although some embodiments herein include certain features included in other embodiments but not others, combinations of features from different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the foregoing claims, any of the claimed embodiments can be used in any combination. The information disclosed in this background section is intended only to enhance the understanding of the general background of the invention and should not be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art.

[0089] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

[0090] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A wafer water bath rapid discharge tank structure, characterized in that, It includes the main tank (101), the water bath tank (2), and the acoustic vibration component (3); The main tank (101) is placed inside the water bath tank (2). The water bath tank (2) is provided with a placement platform (107) for placing wafers (4). The water bath tank (2) is also provided with a DIW spray mechanism, a bubbling mechanism, and a water resistance detection device (106). The water bath tank (2) is also provided with several drain pipes (105). The drain ports of the drain pipes (105) are connected to quick-drain valves (5). The water bath tank (2) is equipped with an acoustic vibration component (3), and the acoustic vibration component (3) is correspondingly arranged with the main tank (101). The acoustic energy of the acoustic vibration component (3) can be transmitted to the surface of the wafer (4) through the water bath. The water bath tank (2) is provided with a number of first support blocks (206) for jointly supporting the main tank (101), and the top surfaces of all the first support blocks (206) are on the same horizontal plane. The acoustic vibration assembly (3) includes an acoustic vibration plate (301) and a generator (302) connected to each other. The acoustic vibration plate (301) is located directly below the main tank (101), and the bottom plate of the main tank (101) is inclined. The bottom of the main tank (101) is also provided with several second support blocks (110) for jointly supporting the placement platform (107), and the placement platform (107) is located at the center of the main tank (101); The bubbling mechanism includes a bubbling tube (104), which is located at the bottom of the main tank (101) and directly below the placement platform (107). Both ends of the bubbling tube (104) are connected to a nitrogen source or an inert gas source, respectively. The bubbling mechanism also includes two bubbling tube fixing blocks (108), which are respectively installed at the two corners of the upper edge of the main groove (101). The two ends of the bubbling tube (104) are led out from the bottom corner of the main groove (101) and fixed by the bubbling tube fixing blocks (108). The main tank (101) includes a main tank bottom plate, a main tank left side plate, a main tank right side plate, a main tank front side plate, and a main tank rear side plate. The DIW spray mechanism includes a DIW spray pipe (103) and pipe clamps (109). Pipe clamps (109) are respectively provided on the top of the left side plate and the right side plate of the main tank. The pipe clamps (109) are provided with slots. The DIW spray pipe (103) is installed in the slots. The DIW spray pipe (103) is connected to the liquid supply pipeline, and several spray heads are provided on the DIW spray pipe (103).

2. The wafer water bath quick-drainage tank structure according to claim 1, characterized in that, Multiple V-shaped overflow ports (112) are sequentially opened on the top of the front side plate and the rear side plate of the main channel.

3. The wafer water bath quick-drainage tank structure according to claim 1, characterized in that, The DIW spray pipe (103) is rotatably connected to the slot and is used to adjust the spray angle of the spray head.

4. The wafer water bath quick-drainage tank structure according to claim 1, characterized in that, It also includes a DIW injection pipe (102), which is located in the lower part of the main tank (101). The DIW injection pipe (102) is connected to the liquid supply pipeline, and an injection hole is provided on the DIW injection pipe (102).

5. The wafer water bath quick-drainage tank structure according to claim 1, characterized in that, The drain pipe (105) is installed at the bottom of the water bath tank (2), and a sealing gasket (6) is provided at the connection between the drain pipe (105) and the water bath tank (2).

6. A wafer cleaning device, characterized in that, The wafer water bath quick-drainage tank structure includes any one of claims 1-5.

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