Display device

Abstract

In a non-display region (N), a plurality of inverted tapered convex portions (Ca) are provided so as to surround a through hole (H), each of the inverted tapered convex portions (Ca) has a resin portion (8a) formed of a resin substrate layer (10) and separated by a plurality of substrate slits (Sa), and an inorganic insulating layer (11a, 13a, 15a, 17a) provided on the resin portion (8a), a first inorganic sealing film (41) is provided so as to cover the plurality of inverted tapered convex portions (Ca) and the plurality of substrate slits (Sa), and in at least one of the plurality of inverted tapered convex portions (Ca), a metal layer (18pa) is provided on the inorganic insulating layer (17a).

Description

TECHNICAL FIELD

[0001] The present application relates to a display device. BACKGROUND

[0002] In recent years, as a display device that replaces a liquid crystal display device, an organic EL display device of a self-emission type using an organic electroluminescence (hereinafter, referred to as "EL") element has been attracting attention. In this organic EL display device, for example, a resin substrate layer, a TFT layer in which a thin film transistor (hereinafter, also referred to as "TFT") is arranged on the resin substrate layer, an organic EL element layer provided on the TFT layer, and a sealing film provided so as to cover the organic EL element layer are provided. In this organic EL display device, in order to provide an electronic component such as a camera, a fingerprint sensor, or the like in the inside of a display region in which image display is performed, a structure in which an island-shaped non-display region in which a through-hole penetrating in a thickness direction is provided is provided has been proposed.

[0003] For example, in Patent Literature 1, an electronic device including a display panel provided with a module hole penetrating a front surface and a back surface of a base substrate in a display region, and an electronic module housed in the module hole is disclosed.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent Laid-Open No. 2019-35950 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] In addition, the organic EL element includes a first electrode provided on the TFT layer, a light-emitting functional layer provided on the first electrode, and a second electrode provided on the light-emitting functional layer. Here, the light-emitting functional layer includes a plurality of individual light-emitting functional layers provided in correspondence with a plurality of sub-pixels constituting a display region, and a common light-emitting functional layer provided in common with the plurality of sub-pixels. In an organic EL display device in which a through-hole is provided in the inside of the display region, moisture and the like can flow in through the common light-emitting functional layer exposed from the through-hole, and the common light-emitting functional layer and the individual light-emitting functional layer in contact therewith can be deteriorated. Therefore, it is necessary to separately form the common light-emitting functional layer formed by an evaporation method on the display region side and the through-hole side in the periphery of the through-hole. Therefore, in the organic EL display device, the inorganic insulating film constituting the TFT layer is patterned, and a ring-shaped slit is formed on the resin substrate layer in the periphery of the through-hole using the patterned inorganic insulating film, and an inverted taper-shaped cross-sectional structure is formed. According to the inverted taper-shaped cross-sectional structure of the resin substrate layer and the inorganic insulating film, although the common light-emitting functional layer can be separately formed on the display region side and the through-hole side, a crack is generated in the inorganic sealing film constituted by the inorganic insulating film constituting the sealing film in the periphery of the through-hole due to processing for forming the through-hole and a load applied thereafter, and the crack can progress toward the display region. In this way, moisture and the like flow in through the crack into the light-emitting functional layer, and the light-emitting functional layer is deteriorated, and display defects occur, and thus there is room for improvement.

[0009] The present application was achieved in view of the above-described aspects, and an object thereof is to suppress generation and progress of a crack in an inorganic sealing film in the periphery of a through-hole toward a display region.

[0010] Solution to the problem

[0011] To achieve the above object, a display device according to the present application includes: a resin substrate layer; a thin film transistor layer provided on the resin substrate layer and sequentially stacked with an inorganic insulating film and a metal wiring layer; a light emitting element layer provided on the thin film transistor layer and sequentially stacked with a plurality of first electrodes, a common light emitting functional layer, and a common second electrode corresponding to a plurality of sub-pixels constituting a display region; and a first inorganic sealing film provided so as to cover the light emitting element layer, provided with an island-shaped non-display region inside the display region, provided with a through-hole penetrating in a thickness direction of the resin substrate layer in the non-display region, and provided with a plurality of inverted tapered convex portions provided so as to surround the through-hole, each of the inverted tapered convex portions having a resin portion formed of the resin substrate layer and an inorganic insulating layer provided on the resin portion and formed of the same material as the inorganic insulating film in the same layer, the resin portion of each of the inverted tapered convex portions being separated by a plurality of substrate slits each formed so as to surround the through-hole on a surface of the thin film transistor layer side of the resin substrate layer, the inorganic insulating layer in each of the inverted tapered convex portions being provided so as to project in a gable-like manner toward at least one of the through-hole side and the display region side from the resin portion, the first inorganic sealing film being provided so as to cover the plurality of inverted tapered convex portions and the plurality of substrate slits in a region in which the plurality of inverted tapered convex portions and the plurality of substrate slits are arranged, and a metal layer being provided on the inorganic insulating layer in at least one of the plurality of inverted tapered convex portions, the metal layer being formed of the same material as the metal wiring layer in the same layer.

[0012] Effects of Invention

[0013] According to the present application, generation of cracks in the inorganic sealing film and progress of the cracks toward the display region can be suppressed at the periphery of the through-hole. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a plan view showing an outline configuration of an organic EL display device according to a first embodiment of the present application.

[0015] Figure 2 is a plan view of a display region of an organic EL display device according to the first embodiment of the present application.

[0016] Figure 3 is a cross-sectional view of the display region of the organic EL display device along the line III-III in Figure 1

[0017] Figure 4 is an equivalent circuit diagram of a TFT layer constituting the organic EL display device according to the first embodiment of the present application. ​

[0018] Figure 5 is a sectional view showing an organic EL layer of the organic EL display device according to the first embodiment of the present application.

[0019] Figure 6 is a plan view of a non-display region and a peripheral portion thereof of the organic EL display device according to the first embodiment of the present application.

[0020] Figure 7 is a sectional view of the non-display region of the organic EL display device along the line VII-VII in Figure 6

[0021] Figure 8 is a sectional view of a metal layer of the inverted tapered convex portion of the organic EL display device according to the first embodiment of the present application.

[0022] Figure 9 is a sectional view of the organic EL display device along the line IX-IX in Figure 1

[0023] Figure 10 is a sectional view of the inverted tapered convex portion in the non-display region of the organic EL display device according to the second embodiment of the present application, which is enlarged.

[0024] Figure 11 is a sectional view of the upper portion of the inverted tapered convex portion in the non-display region of the organic EL display device according to the second embodiment of the present application, which is enlarged.

[0025] Figure 12 is a sectional view of the inverted tapered convex portion in the non-display region of the organic EL display device according to the third embodiment of the present application, which is enlarged.

[0026] Figure 13 is a sectional view of the inverted tapered convex portion in the non-display region of the organic EL display device according to the fourth embodiment of the present application, which is enlarged. DETAILED DESCRIPTION

[0027] Hereinafter, the embodiments of the present application will be described in detail based on the accompanying drawings. Note that the present application is not limited to the following embodiments.

[0028] FIRST EMBODIMENT

[0029] Figures 1 to 9 A first embodiment of a display device according to the present application is described. Furthermore, as a display device having a light emitting element layer, an organic EL display device having an organic EL element is exemplified in each of the following embodiments. Herein, Figure 1 is a plan view showing the schematic configuration of the organic EL display device 50a of the present embodiment. Note that, in the following description, the same reference numerals are used for the same components, and the description thereof will not be repeated.​​Figure 2 is a plan view of a display region D of the organic EL display device 50a. In addition, Figure 3 is a cross-sectional view of the display region D of the organic EL display device 50a along Figure 1 In addition, Figure 4 is an equivalent circuit diagram of a TFT layer 30 constituting the organic EL display device 50a. In addition, Figure 5 is a cross-sectional view of an organic EL layer 33 constituting the organic EL display device 50a. In addition, Figure 6 is a plan view of a non-display region N and a peripheral portion thereof of the organic EL display device 50a. In addition, Figure 7 is a cross-sectional view of the non-display region N of the organic EL display device 50a along Figure 6 In addition, Figure 8 is a cross-sectional view of a metal layer 18pa constituting an inverted tapered convex portion Ca of the organic EL display device 50a. In addition, Figure 9 is a cross-sectional view of the organic EL display device 50a along Figure 1 In addition,

[0030] As shown in Figure 1 , the organic EL display device 50a includes, for example, a display region D provided in a rectangular shape and performing image display, and a frame region F provided in a frame shape around the display region D. Further, in the present embodiment, the display region D is exemplified as a rectangle, but the rectangle also includes, for example, a shape in which sides are in a circular arc shape, a shape in which corners are in a circular arc shape, a shape in which a part of a side has a notch, and the like, which are substantially rectangular.

[0031] As shown in Figure 2 , in the display region D, a plurality of sub-pixels P are arranged in a matrix shape. In addition, in the display region D, as shown in Figure 2 , for example, a sub-pixel P provided with a red light emitting region Er for performing display of red, a sub-pixel P provided with a green light emitting region Eg for performing display of green, and a sub-pixel P provided with a blue light emitting region Eb for performing display of blue are adjacent to each other. Further, in the display region D, for example, one pixel is constituted by three adjacent sub-pixels P provided with the red light emitting region Er, the green light emitting region Eg, and the blue light emitting region Eb. In addition, as shown in Figure 1 , a non-display region N inside the display region D is provided in an island shape. Here, as shown in Figure 1 , in the non-display region N, for example, in order to provide an electronic component 60 such as a camera, a fingerprint sensor, a face authentication sensor, or the like on the back surface side, a through hole H penetrating in a thickness direction of a resin substrate layer 10 described later is provided.

[0032] In the frame region F of the organic EL display device 50a, Figure 1The terminal portion T is provided so as to extend in one direction (the X direction in the drawing) from the lower end portion in the display region D. Here, as shown in Figure 1 the frame region F, a bending portion B that can be bent 180° (U-shaped) with the X direction in the drawing as an axis of bending is provided between the display region D and the terminal portion T so as to extend in one direction (the X direction in the drawing). Further, as shown in Figure 1 and Figure 9 the first planarization film 19a and the second planarization film 21a described later, a groove G that is substantially C-shaped in plan view is provided so as to penetrate the first planarization film 19a and the second planarization film 21a. Here, as shown in Figure 1 the groove G is formed in a substantially C shape so as to open on the side of the terminal portion T in plan view.

[0033] As shown in Figure 3 the organic EL display device 50a includes a resin substrate layer 10, a TFT layer 30 provided on the resin substrate layer 10, an organic EL element layer 40 provided as a light emitting element layer on the TFT layer 30, and a sealing film 45 provided so as to cover the organic EL element layer 40. Further, as shown in Figure 1 in the organic EL display device 50a, an electronic component 60 is provided in a through hole H formed in a non-display region N within the above-described display region D.

[0034] As shown in Figure 3 , Figure 7 and Figure 9 the resin substrate layer 10 includes a first resin substrate layer 6 provided on the opposite side of the TFT layer 30, a second resin substrate layer 8 provided on the side of the TFT layer 30, and an in-substrate inorganic insulating film 7 provided between the first resin substrate layer 6 and the second resin substrate layer 8. Here, the first resin substrate layer 6 and the second resin substrate layer 8 are composed of, for example, a polyimide resin or the like. Further, the in-substrate inorganic insulating film 7, a primer film 11 described later, a gate insulating film 13, a first interlayer insulating film 15, and a second interlayer insulating film 17 are composed of, for example, a single layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0035] As shown in Figure 3 the TFT layer 30 includes a primer film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b (see Figure 4 ), a plurality of third TFTs 9c, and a plurality of capacitors 9d provided on the primer film 11, and a first planarization film 19a and a second planarization film 21a provided in order on each of the first TFTs 9a, each of the second TFTs 9b, each of the third TFTs 9c, and each of the capacitors 9d.

[0036] In the TFT layer 30, as shown inFigure 3 As shown, a base coating film 11, a semiconductor pattern layer such as a semiconductor layer 12a (described later), a gate insulating film 13, a first wiring layer such as a gate line 14g (described later), a first interlayer insulating film 15, a second wiring layer such as an upper conductive layer 16c (described later), a second interlayer insulating film 17, a third wiring layer such as a source line 18f (described later), a first planarization film 19a, a fourth wiring layer such as a power line 20a, and a second planarization film 21a are sequentially stacked on the resin substrate layer 10.

[0037] like Figure 2 as well as Figure 4 As shown, in the TFT layer 30, multiple gate lines 14g are provided as a first wiring layer (gate wiring layer) extending parallel to each other in the lateral direction shown in the figure. Additionally, as... Figure 2 as well as Figure 4 As shown, in the TFT layer 30, multiple light-emitting control lines 14e are arranged as a first wiring layer (gate wiring layer) extending parallel to each other in the lateral direction shown in the figure. Furthermore, as... Figure 2 As shown, each light-emitting control line 14e is positioned adjacent to each gate line 14g. Additionally, as... Figure 2 as well as Figure 4 As shown, in the TFT layer 30, multiple source lines 18f are provided as a third wiring layer (metal wiring layer) extending parallel to each other in the vertical direction shown in the figure. Additionally, as... Figure 1 as well as Figure 3 As shown, in the TFT layer 30, between the first planarization film 19a and the second planarization film 21a, power lines 20a are arranged in a grid pattern as a fourth wiring layer. Additionally, as... Figure 4 As shown, in the TFT layer 30, each sub-pixel P is provided with a first TFT 9a, a second TFT 9b, a third TFT 9c, and a capacitor 9d.

[0038] like Figure 4 As shown, the first TFT9a is electrically connected to the corresponding gate line 14g, source line 18f, and second TFT9b in each sub-pixel P. Additionally, as... Figure 3 As shown, the first TFT 9b includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, a source electrode 18a, and a drain electrode 18b sequentially disposed on the base coating film 11. Here, as... Figure 3 As shown, the semiconductor layer 12a is disposed in an island-like shape on the base coating film 11. As described later, the semiconductor layer 12a has a channel region, a source region, and a drain region. Additionally, as... Figure 3 As shown, the gate insulating film 13 is provided in a manner that covers the semiconductor layer 12a. Additionally, as... Figure 3As shown, the gate electrode 14a is provided on the gate insulating film 13 in a manner of overlapping the channel region of the semiconductor layer 12a. Further, as shown, Figure 3 As shown, the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided in a manner of covering the gate electrode 14a. Further, as shown, Figure 3 As shown, the source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 in a manner of being separated from each other. Further, as shown, Figure 3 As shown, the source electrode 18a and the drain electrode 18b are connected to the source region and the drain region of the semiconductor layer 12a, respectively, via the respective contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.

[0039] As shown, the second TFT 9b is electrically connected with the corresponding first TFT 9a, the power supply line 20a, and the third TFT 9c in each sub-pixel P. Further, the second TFT 9b has substantially the same configuration as the first TFT 9a and the third TFT 9c to be described later. Figure 4

[0040] As shown, the third TFT 9c is electrically connected with the corresponding second TFT 9b, the first electrode 31a of the organic EL element 35 to be described later, and the light emission control line 14e in each sub-pixel P. Further, as shown, Figure 4 Figure 3 As shown, the third TFT 9c includes the semiconductor layer 12b, the gate insulating film 13, the gate electrode 14b, the first interlayer insulating film 15, the second interlayer insulating film 17, and the source electrode 18c and the drain electrode 18d, which are sequentially provided on the undercoat film 11. Here, as shown, Figure 3 As shown, the semiconductor layer 12b is provided on the undercoat film 11 in an island shape, and has a channel region, a source region, and a drain region, similarly to the semiconductor layer 12a. Further, as shown, Figure 3 As shown, the gate insulating film 13 is provided in a manner of covering the semiconductor layer 12b. Further, as shown, Figure 3 As shown, the gate electrode 14b is provided on the gate insulating film 13 in a manner of overlapping the channel region of the semiconductor layer 12b. Further, as shown, Figure 3 As shown, the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided in a manner of covering the gate electrode 14b. Further, as shown, Figure 3 As shown, the source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 in a manner of being separated from each other. Further, as shown, Figure 3 As shown, the source electrode 18c and the drain electrode 18d are connected to the source region and the drain region of the semiconductor layer 12b, respectively, via the respective contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. ​​

[0041] Further, in the present embodiment, the first TFT 9a, the second TFT 9b, and the third TFT 9c are exemplified as top gate type, but the first TFT 9a, the second TFT 9b, and the third TFT 9c can also be bottom gate type TFTs.

[0042] As Figure 4 indicated, the capacitor 9d is electrically connected with the corresponding first TFT 9a and the power supply line 20a in each sub-pixel P. Here, as Figure 3 indicated, the capacitor 9d is provided with a lower layer conductive layer 14c provided as a first wiring layer (gate wiring layer), a first interlayer insulating film 15 provided in a manner of covering the lower layer conductive layer 14c, and an upper layer conductive layer 16c provided as a second wiring layer on the first interlayer insulating film 15 in a manner of overlapping the lower layer conductive layer 14c. Further, the upper layer conductive layer 16c is electrically connected with the power supply line 20a via a contact hole (not shown) formed in the second interlayer insulating film 17 and the first planarization film 19a.

[0043] The first planarization film 19a and the second planarization film 21a have a flat surface in the display region D, and are composed of, for example, an organic resin material such as a polyimide resin, an acrylic resin, or the like, or a SOG (spin on glass) material of a polysiloxane system, or the like. Here, as Figure 3 indicated, a relay electrode 20b is provided as a fourth wiring layer between the first planarization film 19a and the second planarization film 21a, in addition to the above-described power supply line 20a.

[0044] As Figure 3 indicated, the organic EL element layer 40 includes a plurality of first electrodes 31a, an edge cover 32a, an organic EL layer 33, and a second electrode 34 provided in a stacked manner on the TFT layer 30. Here, the organic EL element 35 is composed of the first electrode 31a, the organic EL layer 33, and the second electrode 34 provided in a stacked manner on the TFT layer 30.

[0045] As Figure 3 indicated, the plurality of first electrodes 31a are provided in a matrix shape on the second planarization film 21a in a manner corresponding to the plurality of sub-pixels P. Here, as Figure 3As shown, in each sub-pixel P, the first electrode 31a is electrically connected to the drain electrode 18d of each third TFT 9c via a contact hole formed in the first planarization film 19a, a relay electrode 20b, and a contact hole formed in the second planarization film 21a. Furthermore, the first electrode 31a functions to inject holes (holes) into the organic EL layer 33. In order to improve the hole injection efficiency into the organic EL layer 33, the first electrode 31a is more preferably formed of a material with a high work function. Examples of materials constituting the first electrode 31a include, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn). Alternatively, the material constituting the first electrode 31a can also be an alloy such as astatine (At) / atstatine oxide (AtO2). Furthermore, the material constituting the first electrode 31a can also be a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Additionally, the first electrode 31a can be formed by stacking multiple layers composed of the above-mentioned materials. Furthermore, compound materials with high work functions, such as indium tin oxide (ITO) and indium zinc oxide (IZO), can be cited as examples.

[0046] like Figure 3 As shown, the edge cover 32a is arranged in a grid pattern to cover the periphery of each first electrode 31a. Here, the edge cover 32a is made of organic resin materials such as polyimide resin and acrylic resin, or SOG material based on polysiloxane.

[0047] like Figure 3 As shown, the organic EL layer 33 includes: individual light-emitting functional layers disposed on each of the first electrodes 31a and arranged in a matrix corresponding to a plurality of sub-pixels P; and a shared light-emitting functional layer shared among the plurality of sub-pixels P. Here, as Figure 5As shown, the organic EL layer 33 includes, in order on the first electrode 31a, a hole injection layer 1, a hole transport layer 2, an organic light-emitting layer 3, an electron transport layer 4, and an electron injection layer 5. Further, in the present embodiment, the organic EL layer 33 is exemplified in which the organic light-emitting layer 3 is provided as a separate light-emitting functional layer and the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5 are provided as a common light-emitting functional layer, but color conversion can be performed with a QLED (Quantum-dot light emitting diode) or the like, the organic light-emitting layer 3 is provided as a common light-emitting functional layer, and at least one of the hole injection layer 1, the hole transport layer 2, the electron transport layer 4, and the electron injection layer 5 is provided as a separate light-emitting functional layer.

[0048] The hole injection layer 1 is also referred to as an anode buffer layer, approaches the energy levels of the first electrode 31a and the organic EL layer 33, has a function of improving the injection efficiency of holes from the first electrode 31a to the organic EL layer 33, and is provided as a common light-emitting functional layer common to the plurality of sub-pixels P. Here, as a material constituting the hole injection layer 1, for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, a hydrazone derivative, a diphenylmethane derivative, or the like can be exemplified.

[0049] The hole transport layer 2 has a function of improving the transport efficiency of holes from the first electrode 31a to the organic EL layer 33, and is provided as a common light-emitting functional layer common to the plurality of sub-pixels P. Here, as a material constituting the hole transport layer 2, for example, a porphyrin derivative, an aromatic tertiary amine compound, a phenethylamine derivative, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a pyrazolone derivative, a phenylenediamine derivative, an arylamine derivative, an amine-substituted chalcone derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, a hydrazone derivative, a diphenylmethane derivative, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide, or the like can be exemplified.

[0050] The organic light-emitting layer 3 is a region in which holes and electrons are injected from the first electrode 31a and the second electrode 34, respectively, and the holes and the electrons recombine when a voltage is applied to the first electrode 31a and the second electrode 34, and is provided as a separate light-emitting functional layer in a manner corresponding to the plurality of sub-pixels P. Here, the organic light-emitting layer 3 is formed of a material having a high light-emitting efficiency. Further, as the material constituting the organic light-emitting layer 3, for example, a metal quinolinol compound [8-hydroxyquinoline metal complex], a naphthalene derivative, an anthracene derivative, a stilbene derivative, a vinylpropanone derivative, a triphenylamine derivative, a butadiene derivative, a coumarin derivative, a benzoxazole derivative, an oxadiazole derivative, an oxazole derivative, a benzimidazole derivative, a thiadiazole derivative, a benzothiazole derivative, a styryl derivative, a phenylethylamine derivative, a distyrylbenzene derivative, a tristyrylbenzene derivative, a xanthene derivative, a perinone derivative, an aminopyrene derivative, a pyridine derivative, a rhodamine derivative, an acridine derivative, a phenoxazine, a quinacridone derivative, rubrene, a poly-p-phenylenevinylene, a polysilane, or the like can be given.

[0051] The electron-transporting layer 4 has a function of efficiently transporting electrons to the organic light-emitting layer 3, and is provided as a common light-emitting functional layer that is common to the plurality of sub-pixels P. Here, as the material constituting the electron-transporting layer 4, for example, an oxadiazole derivative, a triazole derivative, a benzoquinone derivative, a naphthoquinone derivative, an anthraquinone derivative, a tetracyanoanthraquinone dimethane derivative, a diphenylquinone derivative, a fluorenone derivative, a thiazole derivative, a metal quinolinol compound, or the like as an organic compound can be given.

[0052] The electron-injecting layer 5 is close to the energy levels of the second electrode 34 and the organic EL layer 33, has a function of improving the efficiency of injecting electrons from the second electrode 34 to the organic EL layer 33, and by this function, it is possible to reduce the driving voltage of the organic EL element 35. Further, the electron-injecting layer 5 is also called a cathode buffer layer, and is provided as a common light-emitting functional layer that is common to the plurality of sub-pixels P. Here, as the material constituting the electron-injecting layer 5, for example, an inorganic alkali compound such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), barium fluoride (BaF2), aluminum oxide (Al2O3), strontium oxide (SrO), or the like can be given.

[0053] The second electrode 34 is provided to be common to the plurality of organic EL layers 33 in the plurality of sub-pixels P, that is, as a common electrode layer that is common to the plurality of sub-pixels P, on the plurality of organic EL layers 33. Figure 3As shown, each organic EL layer 33 and the edge mask 32a are covered. Furthermore, the second electrode 34 has the function of injecting electrons into each organic EL layer 33. In addition, to improve the electron injection efficiency into the organic EL layer 33, the second electrode 34 is more preferably made of a material with a low work function. Examples of materials constituting the second electrode 34 include silver (Ag), aluminum (Al), vanadium (V), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). The second electrode 34 may also be formed of alloys such as magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatine oxide (AtO2), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). Alternatively, the second electrode 34 may be formed of conductive oxides such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). Furthermore, the second electrode 34 may also be formed by stacking multiple layers composed of the above-mentioned materials. In addition, materials with low work function include, for example, magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al).

[0054] like Figure 3 As shown, the sealing film 45 includes a first inorganic sealing film 41, an organic sealing film 42, and a second inorganic sealing film 43, which are disposed sequentially on the second electrode 34 in a manner that covers the second electrode 34. The sealing film 45 functions to protect the organic EL layer 33 of the organic EL element 35 from moisture and oxygen. Here, the first inorganic sealing film 41 and the second inorganic sealing film 43 are, for example, composed of inorganic insulating films such as silicon nitride films, silicon oxide films, and silicon oxynitride films. Furthermore, the organic sealing film 42 is, for example, composed of organic resin materials such as acrylic resin, epoxy resin, silicone resin, polyurea resin, parylene resin, polyimide resin, and polyamide resin. Furthermore, in this embodiment, a three-layer sealing film 45 is illustrated, which is formed by sequentially stacking a first inorganic sealing film 41, an organic sealing film 42, and a second inorganic sealing film 43. However, the sealing film 45 may also be a single-layer sealing film consisting only of the first inorganic sealing film 41, or a two-layer sealing film formed by sequentially stacking the first inorganic sealing film 41 and the organic sealing film 42.

[0055] In addition, such as Figure 6 as well as Figure 7As shown, the organic EL display device 50a includes a plurality of inverted conical protrusions Ca, which are arranged concentrically and annularly in the non-display area N to surround the through hole H.

[0056] like Figure 7 As shown, each inverted conical protrusion Ca includes: a resin portion 8a formed by a second resin substrate layer 8 of the resin substrate layer 10; a first inorganic insulating layer 11a, a second inorganic insulating layer 13a, a third inorganic insulating layer 15a, and a fourth inorganic insulating layer 17a sequentially disposed on the resin portion 8a; and a metal layer 18pa disposed on the fourth inorganic insulating layer 17a. Here, the metal layer 18pa may omit the third inorganic insulating layer 15a and the fourth inorganic insulating layer 17a and be disposed on the second inorganic insulating layer 13a, or it may omit the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a and be disposed on the first inorganic insulating layer 11a. Furthermore, in this embodiment, a configuration in which the metal layer 18pa is disposed on the fourth inorganic insulating layer 17a in each inverted conical protrusion Ca is illustrated, but the metal layer 18pa may also be disposed on at least one of multiple inverted conical protrusions Ca. Additionally, as... Figure 7 As shown, on each inverted conical protrusion Ca, the organic EL layer 33 and the second electrode 34 are separated from the display area D and stacked sequentially.

[0057] like Figure 7 As shown, the resin portion 8a is separated by a plurality of substrate slits Sa, which are concentric and annularly arranged to surround the through-hole H on the surface of the second resin substrate layer 8 on the TFT layer 30 side. Furthermore, as... Figure 7 As shown, at the bottom of each substrate slit Sa, the organic EL layer 33 and the second electrode 34 are separated from the display area D and stacked sequentially.

[0058] The first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a are each formed on the same layer from the same material as the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Here, in each inverted conical protrusion Ca, the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a are as follows: Figure 7The first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a are provided so as to project in a gable shape toward both the through-hole H side and the display region D side from the base of the resin portion 8a, as shown. In this embodiment, although the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a are illustrated as projecting in a gable shape toward both the through-hole H side and the display region D side from the resin portion 8a, the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a can project in a gable shape toward one of the through-hole H side and the display region D side from the resin portion 8a. According to these configurations, since each of the inverted tapered convex portions Ca has an inverted tapered structure in the non-display region N, the shared organic EL layer 33 and the second electrode 34 are separated on the display region D side and the through-hole H side by the step generated by the gable-shaped inverted tapered structure, and are formed.

[0059] The metal layer 18pa is formed in the same layer as the third wiring layer by the same material as the third wiring layer, and is provided, for example, to have a width of about 3 μm to 20 μm. In addition, as shown in FIG. 18, the metal layer 18pa has a first metal layer Ma, a second metal layer Mb, and a third metal layer Mc, which are sequentially stacked on the fourth inorganic insulating layer 17a. In this case, as shown in FIG. 18, the first metal layer Ma and the third metal layer Mc are provided so as to project in a gable shape from the second metal layer Mb toward the through-hole H side and the display region D side. Figure 8 Figure 8 As shown in FIG. 18, in the metal layer 18pa, the inner peripheral end portion and the outer peripheral end portion of the first metal layer Ma and the inner peripheral end portion and the outer peripheral end portion of the third metal layer Mc project in a gable shape more than the inner peripheral end portion and the outer peripheral end portion of the second metal layer Mb. In addition, the first metal layer Ma and the third metal layer Mc are formed of, for example, a titanium film, a titanium alloy film, or the like. Further, the second metal layer Mb is formed of, for example, an aluminum film, an aluminum alloy film, or the like. In this embodiment, the metal layer 18pa is formed in the same layer as the third wiring layer by the same material as the third wiring layer, but the metal layer can be formed in the same layer as the first wiring layer, the second wiring layer, or the fourth wiring layer by the same material as the first wiring layer, the second wiring layer, or the fourth wiring layer.

[0060] As shown in FIG. 18, the metal layer 18pa is provided so as to project in a gable shape from the second metal layer Mb toward the through-hole H side and the display region D side. Figure 7 As shown in FIG. 18, the metal layer 18pa is provided so as to project in a gable shape from the second metal layer Mb toward the through-hole H side and the display region D side. Figure 7 As shown in FIG. 18, the metal layer 18pa is provided so as to project in a gable shape from the second metal layer Mb toward the through-hole H side and the display region D side.

[0061] As shown in FIG. 18, the metal layer 18pa is provided so as to project in a gable shape from the second metal layer Mb toward the through-hole H side and the display region D side. Figure 7 As shown in FIG. 18, the metal layer 18pa is provided so as to project in a gable shape from the second metal layer Mb toward the through-hole H side and the display region D side. Figure 7 ​As shown, the undercoat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are separated by the outer substrate slit Sb and are provided so as to protrude in a cornice shape on the inner side of the outer substrate slit Sb. Also, as shown Figure 7 As shown, the outer substrate slit Sb is filled with the organic sealing film 42 through the first inorganic sealing film 41.

[0062] Further, as shown Figure 7 As shown, the organic EL display device 50a has an inner dam wall Wc in the non-display region N, which is provided in a ring shape between the plurality of substrate slits Sa and the outer substrate slit Sb. Here, as shown Figure 7 As shown, the inner dam wall Wc has the resin layer 32e formed in the same layer as the edge cover 32a from the same material, and is provided so as to contact the inner peripheral end portion of the organic sealing film 42 through the first inorganic sealing film 41, and is configured to suppress diffusion of ink of the organic sealing film 42.

[0063] Further, as shown Figure 7 As shown, the organic EL display device 50a has, in the non-display region N, the first detour wiring 16n and the second detour wiring 18n provided around the outer substrate slit Sb so as to bypass the through hole H. Here, the first detour wiring 16n is formed in the same layer as the second wiring layer from the same material. Further, the second detour wiring 18n is formed in the same layer as the third wiring layer from the same material. Furthermore, the first detour wiring 16n and the second detour wiring 18n are electrically connected to the display wiring (the gate line 14g, the light emission control line 14e, the source line 18f, etc.) extending in the portion corresponding to the through hole H.

[0064] Further, as shown Figure 1 As shown, the organic EL display device 50a has, in the frame region F, a first outer dam wall Wa provided in a frame shape on the outer side of the trench G so as to surround the display region D, and a second outer dam wall Wb provided in a frame shape around the first outer dam wall Wa.

[0065] As shown Figure 9 As shown, the first outer dam wall Wa has a lower resin layer 21b formed in the same layer as the second planarization film 21a from the same material, and an upper resin layer 32c provided on the lower resin layer 21b through the connection wiring 31b and formed in the same layer as the edge cover 32a from the same material. Here, the connection wiring 31b is formed in the same layer as the first electrode 31a from the same material. Furthermore, the first outer dam wall Wa is provided so as to overlap the outer peripheral end portion of the organic sealing film 42, and is configured to suppress diffusion of ink of the organic sealing film 42.

[0066] As shown Figure 9As shown, the second outer side barrier wall Wb has a lower resin layer 21c formed of the same material as the second planarization film 21a in the same layer, and an upper resin layer 32d provided on the lower resin layer 21c with the connecting wire 31b therebetween and formed of the same material as the edge cover 32a in the same layer.

[0067] Further, as shown in FIG. 1, the organic EL display device 50a has the first frame wire 18h provided in the frame region F as a third wire layer in a frame shape on the inner side of the trench G, and both end portions of the portion where the trench G is open extend to the terminal portion T. Here, the first frame wire 18h is configured to be electrically connected to the power supply line 20a of the display region D via a contact hole formed in the first planarization film 19a, and a high power supply voltage (ELVDD) is input to the terminal portion T. Figure 1

[0068] Further, as shown in FIG. 1, the organic EL display device 50a has the second frame wire 18i provided in the frame region F as a third wire layer in a substantially C shape on the outer side of the trench G, and both end portions extend to the terminal portion T. Here, as shown in FIG. 1, the second frame wire 18i is configured to be electrically connected to the second electrode 34 of the display region D via the connecting wire 31b provided in the trench G, and a low power supply voltage (ELVSS) is input to the terminal portion T. Figure 1 Figure 9

[0069] Further, as shown in FIG. 1, the organic EL display device 50a has a plurality of peripheral photo spacers 32b provided in the frame region F in an island shape in a manner that protrude upward from both edge portions of the trench G. Here, the peripheral photo spacers 32b are formed of the same material as the edge cover 32a in the same layer. Figure 9

[0070] In the above-described organic EL display device 50a, in each sub-pixel P, by inputting a gate signal to the first TFT 9a via the gate line 14g, the first TFT 9a becomes in an on state, the gate electrode of the second TFT 9b and the capacitor 9d are written with a prescribed voltage corresponding to a source signal via the source line 18f, and when a light emission control signal is input to the third TFT 9c via the light emission control line 14e, the third TFT 9c becomes in an on state, and a current corresponding to the gate voltage of the second TFT 9b is supplied from the power supply line 20a to the organic EL layer 33, whereby the organic light emitting layer 3 of the organic EL layer 33 emits light, and image display is performed. Further, in the organic EL display device 50a, even if the first TFT 9a becomes in an off state, since the gate voltage of the second TFT 9b is held by the capacitor 9d, the light emission of the organic light emitting layer 3 is maintained by each pixel P until the next frame of the gate signal is input.

[0071] ​​​​Next, a manufacturing method of the organic EL display device 50a of this embodiment will be described. Further, the manufacturing method of the organic EL display device 50a of this embodiment includes a TFT layer forming step, an organic EL element layer forming step, a sealing film forming step, and a through-hole forming step.

[0072] <TFT layer forming step>

[0073] First, for example, a non-photosensitive polyimide resin (thickness of about 6 μm) is applied to a glass substrate, and then pre-baking and post-baking are performed on the applied film, thereby forming a first resin substrate layer 6.

[0074] Next, an inorganic insulating film such as a silicon oxide film (thickness of about 500 nm) is formed on the surface of the substrate on which the first resin substrate layer 6 is formed, by, for example, a plasma CVD (chemical vapor deposition) method, thereby forming a substrate-internal inorganic insulating film 7.

[0075] Further, a second resin substrate layer 8 is formed by, for example, applying a non-photosensitive polyimide resin (thickness of about 6 μm) to the surface of the substrate on which the substrate-internal inorganic insulating film 7 is formed, and then performing pre-baking and post-baking on the applied film, thereby forming a resin substrate layer 10.

[0076] Next, a bottom coating film 11 is formed by, for example, sequentially forming a silicon oxide film (thickness of about 500 nm) and a silicon nitride film (thickness of about 100 nm) on the surface of the substrate on which the resin substrate layer 10 is formed, by a plasma CVD method.

[0077] Next, a semiconductor film is formed by, for example, forming an amorphous silicon film (thickness of about 50 nm) on the surface of the substrate on which the bottom coating film 11 is formed, by a plasma CVD method, crystallizing the amorphous silicon film by laser annealing or the like, and then patterning the semiconductor film, thereby forming a semiconductor layer 12a and the like.

[0078] Next, a gate insulating film 13 is formed by, for example, forming an inorganic insulating film such as a silicon oxide film (thickness of about 100 nm) on the surface of the substrate on which the semiconductor layer 12a and the like is formed, by a plasma CVD method, thereby covering the semiconductor layer 12a and the like.

[0079] Further, a first wiring layer of a gate line 14g and the like is formed by, for example, forming a molybdenum film (thickness of about 250 nm) on the surface of the substrate on which the gate insulating film 13 is formed, by a sputtering method, and then patterning the molybdenum film.

[0080] Next, an intrinsic region and a conductor region are formed in the above-described semiconductor pattern layer by doping an impurity ion using the above-described first wiring layer as a mask.

[0081] After that, by forming a substrate surface of an intrinsic region and a conductor region on the above semiconductor pattern layer, a silicon nitride film (thickness of about 100 nm) is formed by, for example, a plasma CVD method, thereby forming a first interlayer insulating film 15.

[0082] Next, on the substrate surface on which the first interlayer insulating film 15 is formed, a molybdenum film (thickness of about 250 nm) is formed by, for example, a sputtering method, and then the molybdenum film is patterned, thereby forming a second wiring layer of an upper conductive layer 16c and the like.

[0083] Further, a silicon oxide film (thickness of about 300 nm) and a silicon nitride film (thickness of about 200 nm) are sequentially formed on the substrate surface on which the above second wiring layer is formed by, for example, a plasma CVD method, thereby forming a second interlayer insulating film 17.

[0084] Then, by patterning the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, a contact hole is formed.

[0085] Further, in the bending portion B, the laminated film of the undercoat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 is removed, thereby forming a linear slit in the laminated film of the undercoat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.

[0086] Next, on the substrate surface on which the linear slit is formed, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 600 nm), and a titanium film (thickness of about 50 nm) are sequentially formed by, for example, a sputtering method, and then the metal laminated film is patterned, thereby forming a third wiring layer of a source line 18f and the like.

[0087] Further, by applying a photosensitive polyimide resin (thickness of about 2.5 μm) to the substrate surface on which the third wiring layer is formed by, for example, a spin coating method or a slot coating method, and then performing pre-baking, exposure, development, and post-baking on the applied film, a first planarization film 19a and the like are formed.

[0088] After that, on the substrate surface on which the first planarization film 19a is formed, a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 600 nm), and a titanium film (thickness of about 50 nm) and the like are sequentially formed by, for example, a sputtering method, and then the metal laminated film is patterned, thereby forming a fourth wiring layer of a power supply line 20a and the like.

[0089] Finally, a photosensitive resin film of a polyimide type (thickness of about 2.5 μm) is applied to the surface of the substrate on which the fourth wiring layer is formed, for example, by a spin coating method or a slit coating method, and then the applied film is subjected to pre-baking, exposure, development, and post-baking, thereby forming a second planarization film 21a.

[0090] In the above-described manner, the TFT layer 30 can be manufactured.

[0091] <Organic EL element layer forming step>

[0092] The first electrode 31a, the edge cover 32a, the organic EL layer 33 (hole injection layer 1, hole transport layer 2, organic light-emitting layer 3, electron transport layer 4, electron injection layer 5), and the second electrode 34 are formed on the second planarization film 21a of the TFT layer 30 formed in the above-described TFT layer forming step, using a known method, to form an organic EL element layer 40. Here, after the first electrode 31a is formed, in the non-display region N, the laminated film of the undercoat film 11, the gate insulating film 13, the first interlayer insulating film 15, the second interlayer insulating film 17, and the third wiring layer is partially removed, the second resin substrate layer 8 exposed from the laminated film of the undercoat film 11, the gate insulating film 13, the first interlayer insulating film 15, the second interlayer insulating film 17, and the third wiring layer is ashed, to form a substrate slit Sa and an outer substrate slit Sb, thereby forming the inverted tapered convex portion Ca. In the present embodiment, a manufacturing method in which the inverted tapered convex portion Ca is formed by the organic EL element layer forming step is exemplified, but the inverted tapered convex portion Ca can be formed by the above-described TFT layer forming step.

[0093] <Sealing film forming step>

[0094] First, on the surface of the substrate on which the organic EL element layer 40 is formed in the above-described organic EL element layer forming step, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed using a mask by a plasma CVD method, thereby forming a first inorganic sealing film 41.

[0095] Next, on the surface of the substrate on which the first inorganic sealing film 41 is formed, an organic resin material such as an acrylic resin is formed by, for example, an inkjet method, thereby forming an organic sealing film 42.

[0096] Subsequently, on the surface of the substrate on which the organic sealing film 42 is formed, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed using a mask by, for example, a plasma CVD method, thereby forming a second inorganic sealing film 43, and thus a sealing film 45 is formed.

[0097] Further, after a surface-side protective sheet (not shown) is attached to the surface of the substrate on which the sealing film 45 is formed, the glass substrate is peeled from the lower surface of the resin substrate layer 10 by irradiating laser light from the glass substrate side of the resin substrate layer 10, and further, a back-side protective sheet (not shown) is attached to the lower surface of the resin substrate layer 10 from which the glass substrate is peeled.

[0098] <Through-hole forming step>

[0099] In the non-display region N of the resin substrate layer 10 from which the glass substrate is peeled in the above sealing film forming step, a through-hole H is formed, for example, by irradiating laser light while scanning the laser light in a ring shape. After that, when the organic EL display device 50a in which the through-hole H is formed is fixed, for example, to the inside of a housing, an electronic component 60 is disposed in such a manner that the electronic component 60 is disposed on the back-side of the through-hole H.

[0100] In the above manner, the organic EL display device 50a of the present embodiment can be manufactured.

[0101] As described above, according to the organic EL display device 50a of the present embodiment, the metal layer 18pa is provided on the laminate of the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15a, and the fourth inorganic insulating layer 17a in each of the inverted taper-shaped convex portions Ca. Here, since the metal layer 18pa has ductility, it can absorb an impact from the outside compared to the inorganic insulating films that constitute the first inorganic sealing film 41 and the second inorganic sealing film 43. Thus, the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 can be suppressed, and thus the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 in the periphery of the through-hole H toward the display region D can be suppressed. Further, by suppressing the progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 toward the display region D, the inflow of moisture and the like into the organic EL layer 33 can be suppressed, and thus display defects caused by the deterioration of the organic EL layer 33 can be suppressed.

[0102] In addition, according to the organic EL display device 50a of the present embodiment, in the metal layer 18pa, the peripheral end portions of the first metal layer Ma and the third metal layer Mc are more eave-shapedly projected than the peripheral end portion of the second metal layer Mb, and thus the peeling of the film of the sealing film 45 can be suppressed by the anchoring effect of the inverted taper-shaped structure formed by the first metal layer Ma, the second metal layer Mb, and the third metal layer Mc.

[0103] <Second Embodiment>

[0104] Figure 10 and Figure 11 A second embodiment of a display device according to the present application is shown. Here,Figure 10 is a cross-sectional view of the inverted tapered protrusion Cb in the non-display region N of the organic EL display device 50b after being enlarged. Also, Figure 11 is a cross-sectional view of the upper portion of the inverted tapered protrusion Cb in the non-display region N of the organic EL display device 50b after being enlarged. Further, in each of the following embodiments, the same reference numerals are assigned to the same portions as those of the organic EL display device 50b, and detailed description thereof is omitted. Figures 1 to 9 is a cross-sectional view of the upper portion of the inverted tapered protrusion Cb in the non-display region N of the organic EL display device 50b after being enlarged. Further, in each of the following embodiments, the same reference numerals are assigned to the same portions as those of the organic EL display device 50b, and detailed description thereof is omitted.

[0105] In the above-described first embodiment, the organic EL display device 50a provided with the flat metal layer 18pa was exemplified, but in the present embodiment, the organic EL display device 50b provided with the metal layer 18pb having a U-shaped cross section is exemplified.

[0106] Like the organic EL display device 50a of the above-described first embodiment, the organic EL display device 50b is provided with a display region D and a frame region F provided around the display region D.

[0107] Also, like the organic EL display device 50a of the above-described first embodiment, the organic EL display device 50b includes a resin substrate layer 10, a TFT layer 30 provided on the resin substrate layer 10, an organic EL element layer 40 provided on the TFT layer 30, and a sealing film 45 provided so as to cover the organic EL element layer 40. Further, in the organic EL display device 50b, like the organic EL display device 50a of the above-described first embodiment, the electronic component 60 is provided in the through hole H formed in the non-display region N within the display region D.

[0108] Also, as shown in Figure 10 and Figure 11 , the organic EL display device 50b includes a plurality of inverted tapered protrusions Cb in the non-display region N, which are respectively concentrically and circularly provided so as to surround the through hole H.

[0109] As shown in Figure 10 and Figure 11 , each of the inverted tapered protrusions Cb is provided with a resin portion 8a composed of the second resin substrate layer 8 of the resin substrate layer 10, a first inorganic insulating layer 11a, a second inorganic insulating layer 13a, a gate metal layer 14h, a third inorganic insulating layer 15b, and a fourth inorganic insulating layer 17b, which are provided in this order on the resin portion 8a, and a metal layer 18pb provided on the fourth inorganic insulating layer 17b. Further, in the present embodiment, a configuration in which the metal layer 18pb is provided on the fourth inorganic insulating layer 17b in each of the inverted tapered protrusions Cb is exemplified, but the metal layer 18pb can be provided in at least one of the plurality of inverted tapered protrusions Cb. Also, as shown in Figure 10 and Figure 11As shown, on each inverted conical protrusion Cb, the organic EL layer 33 and the second electrode 34 are separated from the display area D and stacked sequentially.

[0110] The first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b are each formed on the same layer of the same material as the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Furthermore, the gate metal layer 14h is formed on the same layer of the same material as the first wiring layer, such as the gate line 14g. Here, as... Figure 10 as well as Figure 11 As shown, in each inverted conical protrusion Cb, the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the gate metal layer 14h, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b are configured to protrude in an eave-like shape from the resin portion 8a toward the through-hole H side and the display area D side. Furthermore, although this embodiment exemplifies a configuration where the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the gate metal layer 14h, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b protrude in an eave-like shape from both the resin portion 8a toward the through-hole H side and the display area D side, the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the gate metal layer 14h, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b may also protrude in an eave-like shape from either the resin portion 8a toward the through-hole H side or the display area D side. Based on these configurations, since each inverted conical protrusion Cb in the non-display area N has an inverted conical structure, the shared organic EL layer 33 and the second electrode 34 are formed by separating on the display area D side and the through-hole H side through steps created by the eaves-like inverted conical structure. Furthermore, in the middle portion of the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b in the width direction, such as... Figure 10 and Figure 11 As shown, an upper slit Sx is formed that penetrates the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b.

[0111] The metal layer 18pb is formed on the same layer as the third wiring layers such as the source line 18f, for example. Figure 10 as well as Figure 11 As shown, it is arranged to cover both sides and the bottom of the upper slit Sx, and has a U-shaped cross-section. Additionally, as... Figure 11 As shown, the metal layer 18pb comprises a first metal layer Ma, a second metal layer Mb, and a third metal layer Mc sequentially stacked on the fourth inorganic insulating layer 17b. Here, as... Figure 12As shown, in the metal layer 18pb, the inner and outer peripheral end portions of the first metal layer Ma and the inner and outer peripheral end portions of the third metal layer Mc are more eaves-shaped than the inner and outer peripheral end portions of the second metal layer Mb. Further, in the present embodiment, the metal layer 18pb formed in the same layer as the third wiring layer by the same material is exemplified, but the metal layer can also be formed in the same layer as the second wiring layer or the fourth wiring layer by the same material.

[0112] Further, similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50b has the outer substrate slit Sb in the non-display region N, which is concentrically and annularly provided so as to surround the plurality of substrate slits Sa on the surface of the TFT layer 30 side of the second resin substrate layer 8.

[0113] Further, similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50b has the inner blocking wall Wc in the non-display region N, which is annularly provided between the plurality of substrate slits Sa and the outer substrate slit Sb.

[0114] Further, similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50b has, in the frame region F, a first outer blocking wall Wa provided so as to surround the display region D, and a second outer blocking wall Wb provided around the first outer blocking wall Wa.

[0115] Further, similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50b has, in the frame region F, a first frame wiring 18h provided in the inner side of the trench G in a frame shape, and a second frame wiring 18i provided on the outer side of the trench G.

[0116] Further, similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50b has, in the frame region F, a plurality of peripheral photo spacers 32b provided in a manner protruding upward on both sides of the trench G.

[0117] Similarly to the organic EL display device 50a of the above first embodiment, the above organic EL display device 50b is flexible, and is configured to perform image display by causing the organic light emitting layer 3 of the organic EL layer 33 to emit light appropriately by the first TFT 9a, the second TFT 9b, and the third TFT 9c in each sub-pixel P.

[0118] The organic EL display device 50b of this embodiment can be manufactured by forming the gate metal layer 14h in the non-display region N at the time of forming the first wiring layer including the gate line 14g in the TFT formation step of the manufacturing method of the organic EL display device 50a of the first embodiment, and locally removing the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17 in the non-display region N before forming the third wiring layer including the source line 18f, to form the portions that become the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b.

[0119] As described above, according to the organic EL display device 50b of this embodiment, the metal layer 18pb is provided on the laminate of the first inorganic insulating layer 11a, the second inorganic insulating layer 13a, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b in each of the inverted taper-shaped protrusions Cb. Here, since the metal layer 18pb has ductility, it can absorb an impact from the outside compared to the inorganic insulating films that constitute the first inorganic sealing film 41 and the second inorganic sealing film 43. Thus, it is possible to suppress the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43, and thus it is possible to suppress the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 in the periphery of the through hole H and toward the display region D. Furthermore, by suppressing the progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 toward the display region D, it is possible to suppress the inflow of moisture and the like to the organic EL layer 33, and thus it is possible to suppress display defects caused by deterioration of the organic EL layer 33.

[0120] In addition, according to the organic EL display device 50b of this embodiment, in the metal layer 18pb, the peripheral end portions of the first metal layer Ma and the third metal layer Mc are more eave-shapedly protruding than the peripheral end portion of the second metal layer Mb, and thus by the anchoring effect of the inverted taper-shaped structure formed by the first metal layer Ma, the second metal layer Mb, and the third metal layer Mc, it is possible to suppress film peeling of the sealing film 45.

[0121] In addition, according to the organic EL display device 50b of this embodiment, the metal layer 18pb has a U-shaped cross section at the upper slit Sx, and thus in the non-display region N, stress such as bending stress is difficult to transmit, and it is possible to suppress the progress of cracks generated by stress toward the display region D.

[0122] <Third Embodiment>

[0123] Figure 12 A third embodiment of a display device according to the present invention is shown. Here, Figure 12 is a cross-sectional view that enlarges the inverted taper-shaped protrusion Cc in the non-display region N of the organic EL display device 50c of this embodiment.

[0124] In the second embodiment described above, an organic EL display device 50b with an upper slit Sx provided on the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b is exemplified. However, in this embodiment, an organic EL display device 50c with an upper slit Sy provided on the second inorganic insulating layer 13b, the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b is exemplified.

[0125] Similar to the organic EL display device 50a of the first embodiment described above, the organic EL display device 50c includes a display area D and a border area F disposed around the display area D.

[0126] Furthermore, similar to the organic EL display device 50a of the first embodiment described above, the organic EL display device 50c includes a resin substrate layer 10, a TFT layer 30 disposed on the resin substrate layer 10, an organic EL element layer 40 disposed on the TFT layer 30, and a sealing film 45 disposed to cover the organic EL element layer 40. In addition, similar to the organic EL display device 50a of the first embodiment described above, in the organic EL display device 50c, an electronic component 60 is disposed in a through-hole H formed in the non-display area N within the display area D.

[0127] In addition, such as Figure 12 As shown, the organic EL display device 50c includes a plurality of inverted conical protrusions Cc in the non-display area N. The plurality of inverted conical protrusions Cc are arranged concentrically and annularly to surround the through hole H.

[0128] like Figure 12 As shown, each inverted conical protrusion Cc includes: a resin portion 8a formed by a second resin substrate layer 8 of the resin substrate layer 10; a first inorganic insulating layer 11a, a second inorganic insulating layer 13b, a third inorganic insulating layer 15b, and a fourth inorganic insulating layer 17b sequentially disposed on the resin portion 8a; and a metal layer 18pc disposed on the fourth inorganic insulating layer 17b. Furthermore, in this embodiment, a configuration is illustrated in which a metal layer 18pc is disposed on the fourth inorganic insulating layer 17b in each inverted conical protrusion Cc; however, the metal layer 18pc may also be disposed in at least one of the plurality of inverted conical protrusions Cc. Additionally, as... Figure 12 As shown, on each inverted conical protrusion Cc, the organic EL layer 33 and the second electrode 34 are separated from the display area D and stacked sequentially.

[0129] The first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b are each formed on the same layer from the same material as the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Here, as... Figure 12As shown, in each inverted conical protrusion Cc, the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b are configured to protrude in an eave-like shape from the resin portion 8a toward both the through hole H side and the display area D side. Furthermore, although this embodiment exemplifies the configuration where the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b protrude in an eave-like shape from both the resin portion 8a toward the through hole H side and the display area D side, the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b may also protrude in an eave-like shape from either the resin portion 8a toward the through hole H side or the display area D side. Based on these configurations, since each inverted conical protrusion Cc in the non-display area N has an inverted conical structure, the shared organic EL layer 33 and the second electrode 34 are formed by steps created by the eaves-like inverted conical structure, separating on the display area D side and the through-hole H side. Furthermore, as... Figure 12 As shown, an upper slit Sy is formed in the middle portion of the second inorganic insulating layer 13b, the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b in the width direction, penetrating the second inorganic insulating layer 13b, the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b.

[0130] The metal layer 18pc is formed on the same layer as the third wiring layer, such as the source line 18f. Figure 13 As shown, the metal layer 18pc is arranged to cover both sides and the bottom of the upper slit Sy, and has a U-shaped cross-section. Furthermore, similar to the metal layer 18pa constituting the organic EL display device 50a of the first embodiment and the metal layer 18pb constituting the organic EL display device 50b of the second embodiment, the metal layer 18pc includes a first metal layer Ma, a second metal layer Mb, and a third metal layer Mc sequentially stacked on the fourth inorganic insulating layer 17b. In this embodiment, a metal layer 18pc formed on the same layer as the third wiring layer is illustrated, but this metal layer may also be formed on the same layer as the fourth wiring layer.

[0131] In addition, similar to the organic EL display device 50a of the first embodiment described above, the organic EL display device 50c has an outer substrate slit Sb in the non-display area N. The outer substrate slit Sb is concentric and circumferentially arranged to surround a plurality of substrate slits Sa on the surface of the second resin substrate layer 8 on the TFT layer 30 side.

[0132] Also similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50c has the inner blocking wall Wc provided annularly between the plurality of substrate slits Sa and the outer substrate slit Sb in the non-display region N.

[0133] Also similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50c has, in the frame region F, the first outer blocking wall Wa provided so as to surround the display region D, and the second outer blocking wall Wb provided around the first outer blocking wall Wa.

[0134] Also similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50c has, in the frame region F, the first frame wiring 18h provided in the inner side of the trench G in a frame shape, and the second frame wiring 18i provided in the outer side of the trench G.

[0135] Also similarly to the organic EL display device 50a of the above first embodiment, the organic EL display device 50c has, in the frame region F, the plurality of peripheral photo spacers 32b provided in an upwardly protruding manner at both edge portions of the trench G.

[0136] Also similarly to the organic EL display device 50a of the above first embodiment, the above organic EL display device 50c is flexible, and configured to perform image display by causing the organic light emitting layer 3 of the organic EL layer 33 to emit light appropriately in each sub-pixel P through the first TFT 9a, the second TFT 9b, and the third TFT 9c.

[0137] The organic EL display device 50c of the present embodiment can be manufactured by, in the TFT layer forming process of the manufacturing method of the organic EL display device 50a of the above first embodiment, locally removing the laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 in the non-display region N before forming the third wiring layer of the source line 18f and the like, to form the portions that become the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b.

[0138] As explained above, according to the organic EL display device 50c of the present embodiment, the metal layer 18pc is provided on the laminate of the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b in each of the inverted taper-shaped protrusions Cc. Here, since the metal layer 18pc has ductility, it can absorb an impact from the outside compared to the inorganic insulating films that constitute the first inorganic sealing film 41 and the second inorganic sealing film 43. Thus, it is possible to suppress the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43, and thus it is possible to suppress the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 in the periphery of the through hole H and toward the display region D. Further, by suppressing the progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 toward the display region D, it is possible to suppress the inflow of moisture and the like to the organic EL layer 33, and thus it is possible to suppress display defects caused by deterioration of the organic EL layer 33.

[0139] Further, according to the organic EL display device 50c of the present embodiment, in the metal layer 18pc, the peripheral end portions of the first metal layer Ma and the third metal layer Mc are more eave-shapedly protruding than the peripheral end portion of the second metal layer Mb, and thus by the anchoring effect of the inverted taper-shaped structure formed by the first metal layer Ma, the second metal layer Mb, and the third metal layer Mc, it is possible to suppress film peeling of the sealing film 45.

[0140] Further, according to the organic EL display device 50c of the present embodiment, the metal layer 18pc has a U-shaped cross section in the upper slit Sy, and thus in the non-display region N, stress such as bending stress is difficult to transmit, and it is possible to suppress the progress of cracks generated by stress toward the display region D. Further, in the organic EL display device 50c, the upper slit Sy is also formed in the second inorganic insulating layer 13b, and thus compared to the above-described second embodiment of the organic EL display device 50b in which the upper slit Sx is formed only in the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b, the upper slit Sx has a deeper U-shaped cross section, and it is possible to further suppress the progress of cracks generated by stress toward the display region D.

[0141] <Fourth Embodiment>

[0142] Figure 13 A fourth embodiment of a display device according to the present invention is shown. Here, Figure 13 is a cross-sectional view of the inverted taper-shaped protrusion Cd in the non-display region N of the organic EL display device 50d of the present embodiment, enlarged.

[0143] In the second and third embodiments described above, organic EL display devices 50b and 50c are illustrated by having metal layers 18pb and 18pc with U-shaped cross-sections separately. However, in this embodiment, organic EL display device 50d is illustrated by having two layers: a metal layer 18pd with a U-shaped cross-section and a gate metal layer 14i.

[0144] Similar to the organic EL display device 50a of the first embodiment described above, the organic EL display device 50d includes a display area D and a border area F disposed around the display area D.

[0145] Furthermore, similar to the organic EL display device 50a of the first embodiment described above, the organic EL display device 50d includes a resin substrate layer 10, a TFT layer 30 disposed on the resin substrate layer 10, an organic EL element layer 40 disposed on the TFT layer 30, and a sealing film 45 disposed to cover the organic EL element layer 40. In addition, similar to the organic EL display device 50a of the first embodiment described above, in the organic EL display device 50d, an electronic component 60 is disposed in a through-hole H formed in the non-display area N within the display area D.

[0146] In addition, such as Figure 13 As shown, the organic EL display device 50d includes a plurality of inverted conical protrusions Cd in the non-display area N. The plurality of inverted conical protrusions Cd are arranged concentrically and annularly to surround the through hole H.

[0147] like Figure 13 As shown, each inverted conical protrusion Cd includes: a resin portion 8a formed by a second resin substrate layer 8 of the resin substrate layer 10; a first inorganic insulating layer 11a, a second inorganic insulating layer 13b, a gate metal layer 14i, a third inorganic insulating layer 15b, and a fourth inorganic insulating layer 17b sequentially disposed on the resin portion 8a; and a metal layer 18pd disposed on the fourth inorganic insulating layer 17b. Furthermore, in this embodiment, an example is shown where, in each inverted conical protrusion Cd, a metal layer 18pd is disposed on the fourth inorganic insulating layer 17b, and a gate metal layer 14i is disposed between the second inorganic insulating layer 13b and the third inorganic insulating layer 15b. However, the metal layer 18pd and the gate metal layer 14i may also be disposed on at least one of multiple inverted conical protrusions Cd. Additionally, as... Figure 13 As shown, on each inverted conical protrusion Cd, the organic EL layer 33 and the second electrode 34 are separated from the display area D and stacked sequentially.

[0148] The first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b are each formed on the same layer from the same material as the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Here, as... Figure 13 As shown, in each inverted conical protrusion Cd, the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the gate metal layer 14i, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b are configured to protrude in an eave-like shape from the resin portion 8a toward the through-hole H side and the display area D side. Furthermore, although this embodiment exemplifies a configuration where the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the gate metal layer 14i, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b protrude in an eave-like shape from both the resin portion 8a toward the through-hole H side and the display area D side, the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the gate metal layer 14i, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b may also protrude in an eave-like shape from either the resin portion 8a toward the through-hole H side or the display area D side. Based on these configurations, since each inverted conical protrusion Cd in the non-display area N has an inverted conical structure, the shared organic EL layer 33 and the second electrode 34 are formed by steps created by the eaves-like inverted conical structure, separating on the display area D side and the through-hole H side. Furthermore, as... Figure 13 As shown, a lower slit Sz penetrating the second inorganic insulating layer 13b is formed in the middle portion of the second inorganic insulating layer 13b in the width direction. Additionally, as... Figure 13 As shown, an upper slit Sx is formed in the middle portion of the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b in the width direction, penetrating the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b.

[0149] Furthermore, the gate metal layer 14i is formed on the same layer as the first wiring layer, such as the gate line 14g. Figure 13 As shown, it is arranged to cover both sides and the bottom of the lower slit Sz, and has a U-shaped cross-section.

[0150] The metal layer 18pd is formed on the same layer as the third wiring layers such as the source line 18f, for example. ​The metal layer 18pd is provided in a manner to cover both side surfaces and a bottom surface of the upper portion slit Sx, and has a U-shaped cross section. Also, similarly to the metal layer 18pa of the organic EL display device 50a of the first embodiment and the metal layer 18pb of the organic EL display device 50b of the second embodiment, the metal layer 18pd is provided with a first metal layer Ma, a second metal layer Mb, and a third metal layer Mc, which are sequentially stacked on the fourth inorganic insulating layer 17b. Further, in the present embodiment, the metal layer 18pd is exemplified as being formed in the same layer as the fourth wiring layer from the same material, but the metal layer can also be formed in the same layer as the fourth wiring layer from the same material.

[0151] Also, similarly to the organic EL display device 50a of the first embodiment, the organic EL display device 50d is provided with an outer substrate slit Sb in the non-display region N, which is concentrically and circularly provided in a manner to surround the plurality of substrate slits Sa on the surface of the TFT layer 30 side of the second resin substrate layer 8.

[0152] Also, similarly to the organic EL display device 50a of the first embodiment, the organic EL display device 50d is provided with an inner blocking wall Wc in the non-display region N, which is circularly provided between the plurality of substrate slits Sa and the outer substrate slit Sb.

[0153] Also, similarly to the organic EL display device 50a of the first embodiment, the organic EL display device 50d is provided with, in the frame region F, a first outer blocking wall Wa provided in a manner to surround the display region D, and a second outer blocking wall Wb provided around the first outer blocking wall Wa.

[0154] Also, similarly to the organic EL display device 50a of the first embodiment, the organic EL display device 50d is provided with, in the frame region F, a first frame wiring 18h provided in a frame shape on the inner side of the trench G, and a second frame wiring 18i provided on the outer side of the trench G.

[0155] Also, similarly to the organic EL display device 50a of the first embodiment, the organic EL display device 50d is provided with, in the frame region F, a plurality of peripheral photo spacers 32b provided in a manner to protrude upward on both edge portions of the trench G.

[0156] Also, similarly to the organic EL display device 50a of the first embodiment, the organic EL display device 50d described above is flexible, and configured to perform image display by causing the organic light emitting layer 3 of the organic EL layer 33 to appropriately emit light through the first TFT 9a, the second TFT 9b, and the third TFT 9c in each sub-pixel P.

[0157] The organic EL display device 50d of this embodiment can be manufactured by, in the TFT layer forming step of the manufacturing method of the organic EL display device 50a of the first embodiment, locally removing the gate insulating film 13 in the non-display region N after the gate insulating film 13 is formed to form a portion that becomes the second inorganic insulating layer 13b, forming the gate metal layer 14i in the non-display region N when the first wiring layer in which the gate line 14g is formed is formed, and locally removing the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17 in the non-display region N before the third wiring layer in which the source line 18f is formed is formed to form portions that become the third inorganic insulating layer 15b and the fourth inorganic insulating layer 17b.

[0158] As described above, according to the organic EL display device 50d of this embodiment, the metal layer 18pd is provided on the laminate of the first inorganic insulating layer 11a, the second inorganic insulating layer 13b, the third inorganic insulating layer 15b, and the fourth inorganic insulating layer 17b in each of the inverted taper-shaped convex portions Cd. Here, since the metal layer 18pd has ductility, it can absorb an impact from the outside compared to the inorganic insulating films that constitute the first inorganic sealing film 41 and the second inorganic sealing film 43. Thus, it is possible to suppress the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43, and thus it is possible to suppress the generation and progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 around the through hole H and toward the display region D. Furthermore, by suppressing the progress of cracks in the first inorganic sealing film 41 and the second inorganic sealing film 43 toward the display region D, it is possible to suppress the inflow of moisture and the like to the organic EL layer 33, and thus it is possible to suppress display defects caused by deterioration of the organic EL layer 33.

[0159] In addition, according to the organic EL display device 50d of this embodiment, in the metal layer 18pd, the peripheral end portions of the first metal layer Ma and the third metal layer Mc are more eave-shaped than the peripheral end portion of the second metal layer Mb, and thus by the anchoring effect of the inverted taper-shaped structure formed by the first metal layer Ma, the second metal layer Mb, and the third metal layer Mc, it is possible to suppress film peeling of the sealing film 45.

[0160] In addition, according to the organic EL display device 50d of this embodiment, the metal layer 18pd not only has a U-shaped cross section in the upper slit Sx but also the gate metal layer 14i has a U-shaped cross section in the lower slit Sz, and thus in the non-display region N, stress such as bending stress is more difficult to transmit, and it is possible to further suppress the progress of cracks generated by stress toward the display region D.

[0161] <Other Embodiments>

[0162] In the above embodiments, an organic EL layer with a five-layer stacked structure of a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer is exemplified. However, the organic EL layer may also be a three-layer stacked structure of a hole injection layer that also serves as a hole transport layer, an organic light-emitting layer, and an electron transport layer that also serves as an electron injection layer.

[0163] Furthermore, in the above embodiments, an organic EL display device is illustrated in which the first electrode is set as the anode and the second electrode is set as the cathode. However, the present invention can also be applied to an organic EL display device in which the stacked structure of the organic EL layer is reversed and the first electrode is set as the cathode and the second electrode is set as the anode.

[0164] Furthermore, in the above embodiments, an organic EL display device in which the electrode of the TFT connected to the first electrode is designated as the drain electrode is illustrated. However, the present invention can also be applied to organic EL display devices in which the electrode of the TFT connected to the first electrode is designated as the source electrode.

[0165] Furthermore, in the above embodiments, an organic EL display device was described as an example of a display device, but the present invention is applicable to display devices having multiple light-emitting elements driven by current, such as a display device having a QLED, which is a light-emitting element using a quantum dot layer.

[0166] Practicality in industry

[0167] As described above, the present invention can be used in flexible EL display devices.

[0168] Explanation of reference numerals in the attached figures

[0169] Ca,Cb,Cc,Cd inverted tapered convex part

[0170] D Display Area

[0171] H through hole

[0172] Ma First Metal Layer

[0173] Mb second metal layer

[0174] Mc Third Metal Layer

[0175] N Non-display area

[0176] P sub-pixel

[0177] Sa substrate slot

[0178] Sb outer substrate slit

[0179] Sx, Sy upper slit

[0180] Sz Lower slit

[0181] Wc barrier wall

[0182] 8a resin portion

[0183] 10 resin substrate layer

[0184] 11 undercoat film (inorganic insulating film)

[0185] 11a first inorganic insulating layer

[0186] 13 gate insulating film (inorganic insulating film)

[0187] 13a second inorganic insulating layer

[0188] 14a, 14b gate electrode (gate wiring layer)

[0189] 14e light emission control line (gate wiring layer)

[0190] 14g gate line (gate wiring layer)

[0191] 14c lower conductive layer (gate wiring layer)

[0192] 14h, 14i gate metal layer

[0193] 15 first interlayer insulating film (inorganic insulating film)

[0194] 15a, 15b third inorganic insulating layer

[0195] 17 second interlayer insulating film (inorganic insulating film)

[0196] 17a, 17b fourth inorganic insulating layer

[0197] 18a, 18c source electrode (metal wiring layer)

[0198] 18b, 18d drain electrode (metal wiring layer)

[0199] 18f source line (metal wiring layer)

[0200] 18h first frame wiring (metal wiring layer)

[0201] 18i second frame wiring (metal wiring layer)

[0202] 18pa, 18pb, 18pc, 18pd metal layer

[0203] 30 TFT layer (thin film transistor layer)

[0204] 31a first electrode

[0205] 33 organic EL layer (light-emitting functional layer, organic electroluminescent layer)

[0206] 34 second electrode

[0207] 40 organic EL element layer (light-emitting element layer)

[0208] 41 first inorganic sealing film

[0209] 42 organic sealing film

[0210] 43 second inorganic sealing film

[0211] 45 sealing film

[0212] 50a, 50b, 50c, 50d organic EL display device

[0213] 60 electronic component

Claims

1. A display device comprising: a resin substrate layer; a thin film transistor layer provided on the resin substrate layer and in which an inorganic insulating film and a metal wiring layer are sequentially stacked; a light emitting element layer provided on the thin film transistor layer and in which a plurality of first electrodes, a common light emitting functional layer, and a common second electrode are sequentially stacked in correspondence with a plurality of sub-pixels constituting a display region; and a first inorganic sealing film provided so as to cover the light emitting element layer, an island-shaped non-display region is provided inside the display region, a through-hole penetrating in a thickness direction of the resin substrate layer is provided in the non-display region, the display device is characterized in that a plurality of inverted tapered convex portions are provided in the non-display region, the plurality of inverted tapered convex portions are provided so as to surround the through-hole, each of the inverted tapered convex portions has a resin portion formed of the resin substrate layer and an inorganic insulating layer provided on the resin portion and formed of the same material as the inorganic insulating film in the same layer, the resin portion of each of the inverted tapered convex portions is separated by a plurality of substrate slits each formed so as to surround the through-hole on a surface of the thin film transistor layer side of the resin substrate layer, in each of the inverted tapered convex portions, the inorganic insulating layer is provided so as to project in a gable-like manner toward at least one of the through-hole side and the display region side from the resin portion, the first inorganic sealing film is provided so as to cover the plurality of inverted tapered convex portions and the plurality of substrate slits in a region in which the plurality of inverted tapered convex portions and the plurality of substrate slits are arranged, in at least one of the plurality of inverted tapered convex portions, a metal layer is provided on the inorganic insulating layer, the metal layer being formed of the same material as the metal wiring layer in the same layer, an upper slit penetrating an upper portion of the inorganic insulating layer is formed in a middle portion in a width direction of the inorganic insulating layer, the metal layer is provided so as to cover both side surfaces and a bottom surface of the upper slit.

2. The display device according to claim 1, characterized in that the metal layer has a U-shaped cross section in the upper slit.

3. The display device according to claim 2, characterized in that on the resin substrate layer, as the inorganic insulating film, a primer film, a gate insulating film, a first interlayer insulating film, and a second interlayer insulating film are sequentially provided, in the resin portion, as the inorganic insulating layer, a first inorganic insulating layer formed of the same material as the primer film in the same layer, a second inorganic insulating layer formed of the same material as the gate insulating film in the same layer, a third inorganic insulating layer formed of the same material as the first interlayer insulating film in the same layer, and a fourth inorganic insulating layer formed of the same material as the second interlayer insulating film in the same layer are sequentially provided, the upper slit is formed in the third inorganic insulating layer and the fourth inorganic insulating layer.

4. The display device according to claim 3, characterized in that The thin film transistor layer has a gate wiring layer provided between the gate insulating film and the first interlayer insulating film, Each of the inverted tapered protrusions has a gate metal layer provided between the second inorganic insulating layer and the third inorganic insulating layer and formed in the same layer as the gate wiring layer from the same material.

5. The display device according to claim 3, wherein The upper slit is formed in the second inorganic insulating layer, the third inorganic insulating layer, and the fourth inorganic insulating layer.

6. The display device according to claim 4, wherein A lower slit that penetrates the second inorganic insulating layer is formed in a middle portion in a width direction of the second inorganic insulating layer, The gate metal layer is provided so as to cover both side surfaces and a bottom surface of the lower slit.

7. The display device according to claim 6, wherein The gate metal layer has a U-shaped cross section at the lower slit.

8. The display device according to any one of claims 1 to 7, wherein The metal layer has a first metal layer, a second metal layer, and a third metal layer stacked in this order on the inorganic insulating layer, The peripheral end portion of the first metal layer and the third metal layer is more eave-shapedly protruded than the peripheral end portion of the second metal layer.

9. The display device according to claim 8, wherein The first metal layer and the third metal layer are formed of a metal film of titanium system, The second metal layer is formed of a metal film of aluminum system.

10. The display device according to any one of claims 1 to 7, wherein An organic sealing film is stacked on the first inorganic sealing film, A lateral substrate slit is provided on a surface of the thin film transistor layer side of the resin substrate layer, the lateral substrate slit being provided so as to surround the plurality of substrate slits, The inorganic insulating film is separated by the lateral substrate slit and is provided so as to be eave-shapedly protruded toward an inner side of the lateral substrate slit, The organic sealing film is filled in the lateral substrate slit across the first inorganic sealing film.

11. The display device according to claim 10, wherein A barrier wall is provided between the plurality of substrate slits and the lateral substrate slit, the barrier wall being provided so as to contact the peripheral end portion of the organic sealing film across the first inorganic sealing film.

12. The display device according to claim 10, wherein A second inorganic sealing film is stacked on the organic sealing film, The second inorganic sealing film is stacked on the first inorganic sealing film in a region in which the plurality of inverted tapered protrusions and the plurality of substrate slits are arranged, The stacked films of the first inorganic sealing film and the second inorganic sealing film are provided so as to cover the plurality of inverted tapered protrusions and the plurality of substrate slits.

13. The display device according to any one of claims 1 to 7, wherein An electronic component is provided in the through hole.

14. The display device according to any one of claims 1 to 7, wherein The light-emitting functional layer is an organic electroluminescent layer.

15. A display device comprising: a resin substrate layer; a thin film transistor layer provided on the resin substrate layer and sequentially stacked with an inorganic insulating film and a metal wiring layer; a light-emitting element layer provided on the thin film transistor layer and sequentially stacked with a plurality of first electrodes, a common light-emitting functional layer, and a common second electrode corresponding to a plurality of sub-pixels constituting a display region; and a first inorganic sealing film provided so as to cover the light-emitting element layer, an island-shaped non-display region is provided inside the display region, a through-hole penetrating in a thickness direction of the resin substrate layer is provided in the non-display region, the display device is characterized in that a plurality of inverted tapered convex portions are provided in the non-display region so as to surround the through-hole, each of the inverted tapered convex portions has a resin portion formed of the resin substrate layer and an inorganic insulating layer provided on the resin portion and formed of the same material as the inorganic insulating film in the same layer, the resin portion of each of the inverted tapered convex portions is separated by a plurality of substrate slits each formed so as to surround the through-hole on a surface of the thin film transistor layer side of the resin substrate layer, in each of the inverted tapered convex portions, the inorganic insulating layer is provided so as to project in a gable-like manner toward at least one of the through-hole side and the display region side from the resin portion, the first inorganic sealing film is provided so as to cover the plurality of inverted tapered convex portions and the plurality of substrate slits in a region in which the plurality of inverted tapered convex portions and the plurality of substrate slits are arranged, in at least one of the plurality of inverted tapered convex portions, a metal layer is provided on the inorganic insulating layer, the metal layer being formed of the same material as the metal wiring layer in the same layer, the metal layer has a first metal layer, a second metal layer, and a third metal layer sequentially stacked on the inorganic insulating layer, the first metal layer and the third metal layer project in a gable-like manner more than the second metal layer.

16. The display device according to claim 15, wherein the first metal layer and the third metal layer are formed of a metal film of titanium, the second metal layer is formed of a metal film of aluminum.

Images