Cr2alb2 coating having a mab phase structure, method of making the same, and articles comprising the same

Abstract

The application discloses a Cr2AlB2 coating with a MAB phase structure and a preparation method thereof and an article containing the same. The preparation method of the Cr2AlB2 coating with the MAB phase structure comprises the following steps: performing magnetron sputtering deposition on a substrate by using a single-target-position combined target to obtain a deposited coating; and performing heat treatment on the deposited coating to obtain a crystalline Cr2AlB2 coating with the MAB phase structure. The single-target-position combined target is arranged in parallel with the substrate, the single-target-position combined target comprises a CrB target layer and an Al target layer which are arranged in a stacking mode in a direction perpendicular to the substrate, the Al target layer is arranged close to the substrate and partially covers the CrB target layer, and the area of the Al target layer covering the CrB target layer accounts for 22% to 28% of the area of the CrB target layer. The Cr2AlB2 coating has high density and high purity.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of surface coating, in particular to a Cr2AlB2 coating with MAB phase structure, a preparation method thereof and an article comprising the same. BACKGROUND

[0002] MAB phase is a kind of ternary cermet with layered structure, in which M is a pre-transition element, A is mainly aluminum element, and B is boron element. According to different proportions of M, A and B, the MAB phase can be divided into 222 type (general formula is MAB), 212 type (general formula is M2AB2), 314 type (general formula is M3AB4), 414 type (general formula is M4AB4), 416 type (general formula is M4AB6) and the like. The MAB phase ternary cermet has good electrical conductivity, thermal conductivity, mechanical processing performance, as well as low density, high elastic modulus, high-temperature oxidation resistance, radiation resistance and other excellent properties, and is expected to be applied in the fields of nuclear energy, aerospace, electronic information and the like.

[0003] Cr-Al-B series MAB phase covers 212 type, 314 type, 414 type and 416 type, and has structural diversity. Among them, Cr2AlB2 material has excellent high-temperature oxidation resistance. According to related technical reports, Cr2AlB2 phase powder can form Al2O3 at high temperature, which hinders the further oxidation of Cr2AlB2 phase by oxidizing gas. Cr2AlB2 material has great application prospect as a protective coating in high-temperature environment.

[0004] At present, the research on Cr2AlB2 material mainly focuses on bulk and powder materials. There are related reports that Cr2AlB2 phase coating is prepared by using a magnetron co-sputtering method. AlB2, Al and Cr three targets are sputtered to deposit Cr2AlB2 phase coating, but the Cr2AlB2 phase coating prepared by this method contains impurities and the crystal grains are rod-shaped, the structure is loose, the preferred orientation is obvious, and the intergranular oxidation is easy to occur, which does not meet the requirements of protective coating. SUMMARY

[0005] In view of this, it is necessary to provide a high-density and high-purity Cr2AlB2 coating, a preparation method thereof and an article comprising the same. The coating prepared by the preparation method has good high-temperature oxidation resistance.

[0006] In a first aspect of the present application, a preparation method of a Cr2AlB2 coating with MAB phase structure is provided, comprising the following steps:

[0007] A single target position combination target material is used for magnetron sputtering deposition on a substrate to obtain a deposited coating;

[0008] subjecting the as-deposited coating to heat treatment to obtain a crystalline Cr2AlB2 coating having a MAB phase structure;

[0009] The single-target-position combined target material is arranged in parallel with the substrate, and the single-target-position combined target material comprises a CrB target material layer and an Al target material layer arranged in a stacking manner in a direction perpendicular to the substrate. The Al target material layer is arranged close to the substrate and partially covers the CrB target material layer. The area of the Al target material layer covering the CrB target material layer accounts for 22% to 28% of the area of the CrB target material layer.

[0010] In some embodiments, the area of the Al target material layer covering the CrB target material layer accounts for 22.2% to 26.4%, and further optionally 24% to 26%, of the area of the CrB target material layer.

[0011] In some embodiments, the CrB target material layer is made of pure-phase CrB sintered from Cr powder and CrB2 powder in a molar ratio of 1:1.

[0012] In some embodiments, the CrB target material layer is a cylinder, and the Al target material layer is a sector with a thickness. The radius of the cylinder is the same as the radius of the sector, and the central angle of the sector is 80° to 100°, and optionally 80° to 95°.

[0013] Optionally, the center of the bottom surface of the cylinder coincides with the center of the sector.

[0014] In some embodiments, the Al target material layer is composed of a plurality of sector-shaped Al pieces. The central angle of each sector-shaped Al piece is independently selected from 8° to 10°.

[0015] Optionally, the plurality of sector-shaped Al pieces are arranged in a dispersed manner on the CrB target material layer. The radius and the center of the plurality of sector-shaped Al pieces coincide with the radius and the center of the bottom surface of the CrB target material layer, and each Al piece is symmetrically placed with the center as the center point.

[0016] In some embodiments, the substrate is selected from Al2O3 single crystal or MgO single crystal.

[0017] In some embodiments, the magnetron sputtering deposition satisfies at least one of the following conditions (1) to (5):

[0018] (1) The sputtering power density of the magnetron sputtering deposition is 1 W / cm2 to 3 W / cm2. 2 2 ;

[0019] (2) The sputtering gas pressure in the sputtering chamber of the magnetron sputtering deposition is 0.25 Pa to 0.35 Pa.​

[0020] (3) the vertical distance between the substrate and the single-target combined target material is 8 cm to 10 cm;

[0021] (4) before the sputtering chamber is filled with sputtering gas, the vacuum degree in the sputtering chamber is less than 4x10 -4 Pa;

[0022] (5) the sputtering chamber is filled with inert sputtering gas, and the flow rate of the inert sputtering gas is 15 sccm to 30 sccm.

[0023] In some embodiments, the temperature of the heat treatment is 650 ℃ to 800 ℃, and the time of the heat treatment is 2 h to 9 h.

[0024] In some embodiments, the heat treatment is carried out in an inert atmosphere, and further optionally, the heat treatment is carried out under the protection of an oxygen absorber.

[0025] In a second aspect of the present application, a Cr2AlB2 coating with a MAB phase structure prepared by the preparation method is provided.

[0026] In a third aspect of the present application, an article comprising the Cr2AlB2 coating with a MAB phase structure is provided.

[0027] Compared with the prior art, the present application has at least the following beneficial effects:

[0028] The preparation method of the Cr2AlB2 coating provided by the present application uses a single-target combined target material for magnetron sputtering deposition by stacking Al with a suitable coverage area on a CrB target, and deposition and heat treatment are carried out in steps, so that the element distribution in the prepared coating is more uniform, and the coating structure has high density and high purity.

[0029] Further, the preparation method of the Cr2AlB2 coating provided by the present application has lower requirements for the configuration of the film plating equipment.

[0030] The Cr2AlB2 coating prepared by the present application has extremely high application value as a protective coating in a high-temperature environment. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the drawings needed in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0032] Figure 1 Flow chart of the method for preparing Cr2AlB2 coating according to an embodiment of the present application;

[0033] Figure 2 Structure diagram of the single-target-position combined target and the substrate according to an embodiment of the present application, wherein the single-target-position combined target is a side view;

[0034] Figure 3 Top view of the single-target-position combined target according to an embodiment of the present application;

[0035] Figure 4 XRD spectrum of the coating prepared in Example 1~3;

[0036] Figure 5 Surface morphology SEM image of the coating prepared in Example 1;

[0037] Figure 6 Surface morphology SEM image of the coating prepared in Example 2;

[0038] Figure 7 Surface morphology SEM image of the coating prepared in Example 3;

[0039] Figure 8 XRD spectrum of the coating prepared in Example 4;

[0040] Figure 9 Surface morphology SEM image of the coating prepared in Example 4;

[0041] Figure 10 XRD spectrum of the coating prepared in Comparative Example 1;

[0042] Figure 11 XRD spectrum of the coating prepared in Comparative Example 2;

[0043] Figure 12 Surface morphology SEM image of the coating prepared in Comparative Example 2;

[0044] Explanation of reference signs:

[0045] 10-single-target-position combined target, 11-CrB target layer, 12-Al target layer, 121-fan-shaped aluminum sheet, 20-substrate. DETAILED DESCRIPTION

[0046] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0048] In the present application, "first aspect", "second aspect", "third aspect" and the like are only for the purpose of description, and cannot be understood as indicating or implying relative importance or quantity, nor can it be understood as implicitly indicating the importance or quantity of the technical features indicated.

[0049] In the present application, in the technical features described in an open manner, both the closed technical solutions consisting of the listed features and the open technical solutions containing the listed features are included.

[0050] In the present application, when referring to a numerical interval, unless otherwise specified, the numerical interval is considered to be continuous and includes the minimum value and the maximum value of the range, as well as each value between the minimum value and the maximum value. Further, when the range refers to an integer, each integer between the minimum value and the maximum value of the range is included. In addition, when multiple ranges are provided to describe a feature or a characteristic, the ranges can be combined. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all sub-ranges subsumed therein.

[0051] In the present application, the temperature parameter, unless otherwise specified, allows both constant temperature treatment and treatment within a certain temperature range. The constant temperature treatment allows the temperature to fluctuate within the accuracy range controlled by the instrument.

[0052] In the present application, the method steps not emphasized on temperature generally refer to the method steps carried out at room temperature or under room temperature conditions. In this application, room temperature or room temperature are equivalent alternatives, and the specific temperature refers to 22°C to 25°C.

[0053] If not specifically stated, all embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions.

[0054] If not specifically stated, all technical features and optional technical features of the present application can be combined with each other to form new technical solutions.

[0055] If not specifically stated, all steps of the present application can be performed in sequence or randomly. For example, the method comprises steps (a) and (b), which means that the method can comprise steps (a) and (b) in sequence, or steps (b) and (a) in sequence. For example, the method can further comprise step (c), which means that step (c) can be added to the method in any sequence, for example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0056] If not specifically stated, the present application refers to "including" and "comprising" as open-ended, and can also be closed. For example, "including" and "comprising" can mean that other components not listed can also be included or contained, or only the listed components can be included or contained.

[0057] If not specifically stated, in the present application, the term "or" is inclusive. For example, the phrase "A or B" means "A, B, or both A and B". More specifically, any one of the following conditions satisfies the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or A and B are both true (or exist).

[0058] Based on the above background, there are relevant reports that use AlB2, Al, Cr three target position magnetron co-sputtering deposition of Cr2AlB2 phase coating, which puts forward higher requirements for the configuration of the coating equipment. At the same time, the applicant further found that due to the existence of the included angle between the target position and the substrate during multi-target co-sputtering deposition, the element distribution in the coating is uneven, there is a concentration gradient of the element, so that it contains impurities, the grain presents rod shape, the structure is loose, the preferred orientation is obvious, and the oxidation along the grain boundary is easy to occur, which does not meet the use requirements of the coating, and further restricts the performance of the coating.

[0059] Based on this, the applicant first proposes a method for depositing a Cr2AlB2 phase coating by single-target magnetron sputtering, which uses a single-target combined target material for magnetron sputtering deposition, so that the target position and the substrate can be arranged relatively parallel, thereby ensuring the uniformity of element distribution during deposition.

[0060] Please refer to Figure 1 In the first aspect of the embodiment of the present application, a preparation method of a Cr2AlB2 coating with MAB phase structure is provided, comprising the following steps:

[0061] S10, a single-target combined target material is used for magnetron sputtering deposition on a substrate to obtain a deposited coating;

[0062] S20, heat-treating the as-deposited coating to obtain a crystalline Cr2AlB2 coating with MAB phase structure.

[0063] Please refer to Figure 2 The single-target combined target material 10 includes a CrB target material layer 11 and an Al target material layer 12 stacked in a direction perpendicular to the substrate. The Al target material layer 12 is arranged close to the substrate and partially covers the CrB target material layer 11. The area of the Al target material layer 12 covering the CrB target material layer 11 accounts for 22% to 28% of the area of the CrB target material layer 11, which can be selected as 22.2% to 26.4%, and further selected as 24% to 26%. Understandably, the percentage of the area of the Al target material layer 12 covering the CrB target material layer 11 accounts for 22%, 22.2%, 22.4%, 22.6%, 22.8%, 23%, 23.2%, 23.4%, 23.6%, 23.8%, 24%, 24.2%, 24.6%, 24.8%, 25%, 25.2%, 25.4%, 25.6%, 25.8%, 26%, 26.2%, 26.4%, 26.6%, 26.8%, 27%, 27.2%, 27.4%, 27.6%, 27.8%, 28%, and any value therebetween.

[0064] In some embodiments, the CrB target material layer 11 is made of pure phase CrB sintered from Cr powder and CrB2 powder in a molar ratio of 1:1.

[0065] In some embodiments, the CrB target material layer 11 is a cylinder, and the Al target material layer 12 is a sector with a thickness. The radius of the cylinder is the same as the radius of the sector, and the central angle of the sector is 80° to 100°, which can be selected as 80° to 95°. Understandably, the central angle of the sector can include but is not limited to 80°, 81°, 82°, 83°, 84°, 85°, 86°, 87°, 88°, 89°, 90°, 91°, 92°, 93°, 94°, 95°, 96°, 97°, 98°, 99°, 100°, and any value therebetween.

[0066] In some embodiments, the center of the bottom surface of the cylinder coincides with the center of the sector.

[0067] In some specific embodiments, the diameter of the CrB target material layer 11 is 60 mm or 3 inches.

[0068] In some specific embodiments, the thickness of the CrB target material layer 11 (i.e., the height of the cylinder) is not more than 5 mm.

[0069] In some embodiments, the single-target combination target 10 further comprises a back target (not shown in the figure) to prevent the target from cracking due to uneven heating and to prolong the service life of the target. The CrB target layer 11 is fixed to the back target, which can be a copper back target, by soldering. The soldering can be silver glue or pure indium.

[0070] In some embodiments, the Al target layer 12 is composed of a plurality of fan-shaped Al pieces 121, and the central angle of each fan-shaped Al piece 121 is independently selected from 8° to 10°, for example, independently selected from 8°, 9° or 10°. Understandably, the sum of the central angles of the plurality of fan-shaped Al pieces is 80° to 100°.

[0071] In some embodiments, the Al pieces are pretreated to remove surface impurities, for example, by sanding, reagent cleaning, ultrasonic cleaning and the like.

[0072] Further, please refer to Figure 3 In some embodiments, the plurality of fan-shaped Al pieces 121 are dispersedly arranged on the CrB target layer 11, and the radius and the center of the plurality of fan-shaped Al pieces 121 coincide with the radius and the center of the bottom surface of the CrB target layer 11, and the fan-shaped Al pieces 121 are symmetrically placed with the center as the center point.

[0073] In some embodiments, the substrate is selected from Al2O3(0001) single crystal or MgO(100) single crystal. Herein, “0001” and “100” refer to the Miller indices of the surface of the single crystal substrate.

[0074] In some embodiments, in step S10, the sputtering power density of the magnetron sputtering deposition is 1 W / cm 2 ~3 W / cm 2 . Understandably, the sputtering power density of the magnetron sputtering deposition can include but is not limited to 1 W / cm 2 , 1.5 W / cm 2 , 2 W / cm 2 , 2.5 W / cm 2 , 3 W / cm 2 . The sputtering power density of the magnetron sputtering deposition in this range is conducive to maintaining the integrity of the Al pieces during sputtering.

[0075] In some embodiments, in step S10, the sputtering gas pressure in the sputtering chamber of the magnetron sputtering deposition is 0.25 Pa to 0.35 Pa. Understandably, the sputtering gas pressure in the sputtering chamber of the magnetron sputtering deposition can include but is not limited to 0.25 Pa, 0.30 Pa, 0.35 Pa. The sputtering gas pressure in the sputtering chamber of the magnetron sputtering deposition in this range is conducive to further improving the high-temperature oxidation resistance of the coating and maintaining the stability of the atomic ratio of Cr, Al and B elements in the coating.

[0076] In some embodiments, in step S10, the vertical distance between the substrate 20 and the single-target-positioned combined target 10 is 8 cm to 10 cm. It is understood that the vertical distance between the substrate 20 and the single-target-positioned combined target 10 can include, but is not limited to, 8 cm, 8.5 cm, 9 cm, 9.5 cm, 10 cm. The vertical distance between the substrate 20 and the single-target-positioned combined target 10 within this range is conducive to further maintaining the uniformity of the coating.

[0077] In some embodiments, in step S10, the vacuum degree in the sputtering chamber before the magnetron sputtering deposition is less than 4 x 10 -4 Pa. The vacuum degree in the sputtering chamber before the magnetron sputtering deposition is less than this value, which is conducive to further improving the purity of the coating.

[0078] In some embodiments, in step S10, the inert sputtering gas is introduced during the magnetron sputtering deposition, and the flow rate of the inert sputtering gas is 15 sccm to 30 sccm. It is understood that the flow rate of the inert sputtering gas can include, but is not limited to, 15 sccm, 18 sccm, 20 sccm, 22 sccm, 25 sccm, 28 sccm, 30 sccm, and any value therebetween. The inert sputtering gas can be argon.

[0079] It should be noted that the magnetron sputtering deposition in the present application can be carried out at room temperature.

[0080] In some embodiments, in step S20, the temperature of the heat treatment is 650 ℃ to 800 ℃, and the time of the heat treatment is 2 h to 9 h. It is understood that the temperature of the heat treatment can be independently selected from 650 ℃, 680 ℃, 700 ℃, 720 ℃, 750 ℃, 780 ℃, 800 ℃, and any value therebetween; and the time of the heat treatment can be independently selected from 2 h, 3 h, 4 h, 5 h, 6 h, 7 h, 8 h, 9 h, and any value therebetween.

[0081] In some embodiments, the heat treatment is carried out in an inert atmosphere, and further optionally, the heat treatment is carried out under the protection of an oxygen absorber in an inert atmosphere. The inert atmosphere can include, but is not limited to, an argon atmosphere. The oxygen absorber can include, but is not limited to, a Ti sheet, a Zr sheet, or a Cr sheet.

[0082] In some embodiments, the heat treatment is carried out in a tube furnace. Optionally, the tube is filled with an inert gas to form an inert atmosphere. Further optionally, the gas pressure in the tube is 1 atm to 1.2 atm.

[0083] In a second aspect, the present application provides a Cr2AlB2 coating with MAB phase structure prepared by the method of any of the above embodiments. Compared with the conventional Cr2AlB2 coating, the coating has higher purity and higher density.

[0084] In a third aspect, the present application provides an article comprising the Cr2AlB2 coating with MAB phase structure as described above.

[0085] The following are specific examples. The purpose is to make further detailed description of the present application, to help the skilled and researchers further understand the present application, and the relevant technical conditions do not constitute any limitation on the present application. Any form of modification within the scope of the claims of the present application is within the protection scope of the claims of the present application.

[0086] Unless otherwise specified, the raw materials and reagents used in the following examples are commercially available or can be prepared by known methods. The instruments are selected according to the conventional selection in the art. The experimental methods not specified in the examples are carried out according to the conventional conditions, such as the conditions described in the literature, books or the methods recommended by the manufacturer.

[0087] Example 1

[0088] In this embodiment, the preparation steps of the Cr2AlB2 coating are as follows:

[0089] (1) Sinter pure-phase CrB bulk material from Cr powder and CrB2 powder according to a molar ratio of 1:1, cut into a circular CrB target material with a diameter of 60 mm, and bind the copper back target with silver glue, with a total thickness of 5 mm.

[0090] (2) Use a wire cutting method to cut a fan-shaped piece with the same radius as the CrB target material on a high-purity Al plate with a thickness of 1 mm, with a central angle of 10°. The cut Al piece is polished with 600 mesh sandpaper to remove surface contamination, then ultrasonically cleaned with acetone, ethanol and deionized water in sequence, and dried for use.

[0091] (3) Stack 9 pieces of Al pieces with a radius of 30 mm and a central angle of 10° on the circular CrB target material with a diameter of 60 mm, with a total central angle of 90°. All Al pieces are symmetrically distributed, and the centers of all Al pieces coincide with the center of the CrB target material, to obtain a combined target material. The combined target material is placed horizontally in the direct current target position of the magnetron sputtering instrument.

[0092] (4) Ultrasonically clean the Al2O3(0001) single crystal substrate with acetone, ethanol and deionized water in sequence, and place it in the vacuum chamber of the magnetron sputtering instrument after drying, with the Al2O3(0001) single crystal substrate being relatively parallel to the combined target material prepared in step (3), and the vertical distance between the Al2O3(0001) single crystal substrate and the combined target material being 8 cm.

[0093] (5) When the vacuum degree of the vacuum chamber reaches 2x10 -4 Pa, high-purity argon gas with a flow rate of 25 sccm is introduced, the sputtering chamber has a pressure of 0.30 Pa during sputtering, the sputtering power density is 2.1 W / cm 2 , and the sputtering time is 2 h to obtain a deposited coating.

[0094] (6) The deposited coating is placed in a corundum tube furnace, a corundum crucible is used as a container, and Ti sheets are placed on both sides of the crucible. The air in the tube furnace is pumped away by a mechanical pump, and high-purity argon gas is filled into the tube. Heat treatment is carried out under argon protection, the temperature rising and falling rate is 5 ℃ / min, the heat treatment temperature is 800 ℃, and the holding time is 9 h. The maximum pressure in the tube is 1.2 atm.

[0095] The coating prepared by the above method is characterized by XRD (Cu-K α radiation), and the coating phase is pure phase Cr2AlB2, as shown in Figure 4 .

[0096] The coating prepared in this embodiment is characterized by SEM, and the coating surface morphology is dense, as shown in Figure 5 .

[0097] Example 2

[0098] The preparation method of Example 2 is basically the same as that of Example 1, except that the holding time in step (6) is 2 h.

[0099] The coating prepared by the above method is characterized by XRD (Cu-K α radiation), and the coating phase is pure phase Cr2AlB2, as shown in Figure 4 .

[0100] The coating prepared in this embodiment is characterized by SEM, and the coating surface morphology is dense, as shown in Figure 6 .

[0101] Example 3

[0102] The preparation method of Example 3 is basically the same as that of Example 1, except that the heat treatment temperature in step (6) is 650 ℃, and the holding time is 8 h.

[0103] The coating prepared by the above method is characterized by XRD (Cu-K α radiation), and the coating phase is pure phase Cr2AlB2, as shown in Figure 4 .

[0104] The coating prepared in this embodiment is characterized by SEM, and the coating surface morphology is dense, as shown in Figure 7 .

[0105] Example 4

[0106] The preparation method of Example 4 is basically the same as that of Example 1, except that the substrate is selected as MgO(100) single crystal and the heat treatment time in step (6) is 2 h.

[0107] Using XRD (Cu-K) α The coating prepared by the above method was characterized by radiation. The phase of the coating is pure Cr2AlB2, such as... Figure 8 As shown.

[0108] The coating prepared in this embodiment was characterized using SEM. The coating surface morphology was dense, such as... Figure 9 As shown.

[0109] Comparative Example 1

[0110] The preparation method of Comparative Example 1 is basically the same as that of Example 1, except that the central angle of the Al sheet is 9°, the number of sheets is 8, and the total number of central angles is 72°; in step (6), the heat treatment temperature is 900 ℃ and the holding time is 7 h.

[0111] Using XRD (Cu-K) α The coating prepared in this comparative example was characterized by radiation. The phases of the coating were Cr4AlB4 and CrB, and Cr2AlB2 was not identified. Figure 10 As shown.

[0112] Comparative Example 2

[0113] The preparation method of Comparative Example 1 is basically the same as that of Example 1, except that the central angle of the Al sheet is 9°, the number of sheets is 8, and the total number of central angles is 72°; in step (6), the heat treatment temperature is 900 ℃ and the holding time is 7 h.

[0114] Using XRD (Cu-K) α The coating prepared by the above method was characterized by radiation. The phases of the coating are Cr2AlB2 and Al, with impurity phases, such as... Figure 11 As shown.

[0115] The coating prepared in this comparative example was characterized using SEM. The surface morphology of the coating exhibited a mixed state of loose particles and rod-like structures, with an uneven and non-dense texture. Figure 12 As shown.

[0116] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0117] The above-described embodiments only express several implementation manners of the present application, facilitate specific and detailed understanding of the technical solutions of the present application, but cannot be understood as a limitation on the patent protection scope of the invention patent. It should be noted that, for ordinary skilled persons in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims, and the description can be used to explain the content of the claims.

Claims

1. A method for producing a Cr2AlB2 coating having a MAB phase structure, characterized by, The method comprises the following steps: a deposition state coating is obtained by magnetron sputtering deposition on a substrate using a single target position combined target material; a crystalline Cr2AlB2 coating with MAB phase structure is obtained by heat treatment of the deposition state coating; The single target position combined target material is arranged in parallel with the substrate, and the single target position combined target material comprises a CrB target material layer and an Al target material layer arranged in a stacking manner in a direction perpendicular to the substrate, the Al target material layer is arranged close to the substrate and partially covers the CrB target material layer, and the area of the Al target material layer covering the CrB target material layer accounts for 22% to 28% of the area of the CrB target material layer. The CrB target material layer is a cylinder, and the Al target material layer is a sector with a thickness, the radius of the cylinder is the same as the radius of the sector, and the sum of the central angles of the sector is 80° to 100°. The magnetron sputtering deposition is performed at room temperature. The heat treatment is performed in an inert atmosphere, the temperature of the heat treatment is 650 ℃ to 800 ℃, and the time of the heat treatment is 2 h to 9 h.

2. The method of claim 1, wherein the Cr2AlB2 coating having a MAB phase structure is prepared by a process comprising: The area of the Al target material layer covering the CrB target material layer accounts for 22.2% to 26.4% of the area of the CrB target material layer.

3. The method of claim 1, wherein the Cr2AlB2 coating layer having a MAB phase structure is prepared by a process comprising: The area of the Al target material layer covering the CrB target material layer accounts for 24% to 26% of the area of the CrB target material layer.

4. The method of claim 1, wherein the Cr2AlB2 coating having a MAB phase structure is prepared by, The CrB target material layer is made of pure phase CrB sintered from Cr powder and CrB2 powder at a molar ratio of 1:

1.

5. The method of producing a Cr2AlB2 coating having a MAB phase structure according to any one of claims 1 to 4, characterized in that, The sum of the central angles of the sector is 80° to 95°.

6. The method of claim 5, wherein the Cr2AlB2 coating having a MAB phase structure is prepared by a process comprising: The center of the bottom surface of the cylinder coincides with the center of the sector.

7. The method of claim 5, wherein the Cr2AlB2 coating layer having a MAB phase structure is prepared by a process comprising: The Al target material layer is composed of a plurality of sector Al pieces, and the central angle of each sector Al piece is independently selected from 8° to 10°.

8. The method of claim 7, wherein the Cr2AlB2 coating having a MAB phase structure is prepared by a process comprising: The plurality of sector Al pieces are dispersedly arranged on the CrB target material layer, and the radius and center of the plurality of sector Al pieces coincide with the radius and center of the bottom surface of the CrB target material layer, and each Al piece is symmetrically placed with the center as the center point.

9. The method of claim 1, wherein the Cr2AlB2 coating having a MAB phase structure is prepared by, The substrate is selected from Al2O3 single crystal or MgO single crystal.

10. The method of claim 1, wherein the Cr2AlB2 coating having a MAB phase structure is prepared by, The magnetron sputtering deposition satisfies at least one of the following conditions (1) to (5); (1) the sputter power density of the magnetron sputter deposition is 1 W / cm 2 3 W / cm 2 ; (2) the sputtering gas pressure in the sputtering chamber is 0.25 Pa to 0.35 Pa; (3) the vertical distance between the substrate and the single target position combined target material is 8 cm to 10 cm; (4) The magnetron sputtering deposition passes into the sputtering gas before the vacuum degree in the sputtering chamber is less than 4x10 -4 Pa; (5) inert sputtering gas is introduced during the magnetron sputtering deposition, and the flow rate of the inert sputtering gas is 15 sccm to 30 sccm.

11. The method of claim 1, wherein the Cr2AlB2 coating having a MAB phase structure is prepared by, The heat treatment is performed in an inert atmosphere and under the protection of an oxygen absorber.

12. A Cr2AlB2 coating with MAB phase structure prepared by the preparation method of any one of claims 1 to 11.

13. An article comprising the Cr2AlB2 coating with MAB phase structure of claim 12.

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